Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
  • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
  • H10W20/435—Cross-sectional shapes or dispositions of interconnections
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L101/00—Compositions of unspecified macromolecular compounds
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W42/00—Arrangements for protection of devices
  • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/68—Shapes or dispositions thereof
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/69—Insulating materials thereof
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Definitions

• the present invention relates to a semiconductor device and a resin composition.
• WL-CSP wafer-level chip size package
• WLP wafer-level package
• fan-in WLP external electrodes (external terminals) are provided as a semiconductor device in an area equivalent to the size of a semiconductor chip.
• fan-in WLP a redistribution layer including wiring and an interlayer insulating film is formed in an area equivalent to the size of a semiconductor chip, and external electrodes (external terminals) are provided.
• fan-out WLP external electrodes (external terminals) are provided as a semiconductor device in an area larger than the size of a semiconductor chip.
• fan-out WLP (hereinafter also referred to as "FO-WLP type") type semiconductor device
• the semiconductor chip is sealed with a sealing material including resin
• a redistribution layer including wiring and an interlayer insulating film is formed in an area larger than the semiconductor chip and in contact with both the semiconductor chip and the sealing material that seals the periphery of the semiconductor chip, and external electrodes (external terminals) are provided.
• Patent Document 1 discloses a FO-WLP type semiconductor device that includes a semiconductor chip, a sealing material that covers the semiconductor chip, and a redistribution layer that is larger in area than the semiconductor chip in a plan view.
• the redistribution layer provided in an FO-WLP type semiconductor device has a problem in that the semiconductor chip and the encapsulant are made of different materials with different linear expansion coefficients, and the difference in the linear expansion coefficients between the two makes it easy for the semiconductor chip and the encapsulant to peel off when exposed to repeated heat cycles of high and low temperatures.
• the redistribution layer which is in contact with two different materials with different linear expansion coefficients, the semiconductor chip and the encapsulant, also becomes prone to peeling when exposed to repeated heat cycles due to the difference in the linear expansion coefficients between the semiconductor chip and the encapsulant, and cracks may easily form in the wiring contained in the redistribution layer.
• the present invention therefore aims to provide a semiconductor device and a resin composition that include an interlayer insulating film with a large tensile elongation rate, which can suppress material peeling and cracking due to the difference in linear expansion coefficients even when in contact with two materials with different linear expansion coefficients.
• the means for solving the above problems are as follows, and the present invention includes the following aspects.
• a semiconductor chip An encapsulant for covering the semiconductor chip; a rewiring layer including wiring that electrically connects the semiconductor chip to an external terminal and an interlayer insulating film that covers the periphery of the wiring; the redistribution layer has an area larger than that of the semiconductor chip in a plan view;
• the semiconductor device is characterized in that the interlayer insulating film has a tensile elongation at 25° C. of 15% or more.
• the interlayer insulating film is in direct contact with at least a part of the semiconductor chip and at least a part of the sealing material.
• the interlayer insulating film is made of a resin composition containing a thermosetting resin having an unsaturated double bond at a terminal thereof.
• the interlayer insulating film is made of a resin composition containing polyphenylene ether having an unsaturated double bond at a terminal thereof and an elastomer.
• the interlayer insulating film is made of a resin composition containing polyphenylene ether having an unsaturated double bond at a terminal and an elastomer, and a ratio of hard segments to soft segments contained in the elastomer is 1:99 to 45:55.
• the elastomer is a styrene-based thermoplastic elastomer.
• the sealing material includes an epoxy resin.
• a resin composition comprising: (A) a thermosetting resin having an unsaturated double bond at a terminal; and (B) an elastomer,
• the resin composition for use in a wafer-level package type semiconductor device is characterized in that a cured product of the resin composition has a tensile elongation of 15% or more at 25°C.
• the present invention provides a semiconductor device and a resin composition that include an interlayer insulating film with a large tensile elongation rate that can suppress material peeling and cracking due to the difference in linear expansion coefficients even when in contact with two materials with different linear expansion coefficients.
• FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a FO-WLP type semiconductor device.
• FIG. 2 is a plan view of a semiconductor chip and an interlayer insulating film of a FO-WLP type semiconductor device.
• FIG. 3 is a schematic perspective view showing the semiconductor chip and sealing material of the FO-WLP type semiconductor device, and the rewiring layer, separately.
• FIG. 4 is a schematic perspective view of a semiconductor chip and a sealing material of a FO-WLP type semiconductor device.
• the present disclosure may include an interlayer insulating film of a semiconductor device formed by curing the resin composition.
• the embodiments shown below are examples for embodying the technical idea of the present invention, and the present invention is not limited to the following semiconductor device and resin composition, or the interlayer insulating film of a semiconductor device.
• " ⁇ " means that the upper and lower limits of the numerical value or symbol containing a numerical value described before and after it are included, and represents from above to below.
• the members shown in the claims are in no way limited to the members of the embodiments.
• a semiconductor device comprises a semiconductor chip, an encapsulant covering the semiconductor chip, wiring electrically connecting the semiconductor chip to an external terminal, and a redistribution layer including an interlayer insulating film covering the periphery of the wiring, the redistribution layer having an area larger than that of the semiconductor chip in a planar view, and the interlayer insulating film having a tensile elongation of 15% or more at 25°C. Since the redistribution layer of the semiconductor device has an area larger than that of the semiconductor chip in a planar view, it is preferable that the redistribution layer be in direct contact with at least a portion of the semiconductor chip and at least a portion of the encapsulant.
• At least a portion of the semiconductor chip and at least a portion of the encapsulant may be adjacent to each other and present on the same plane, and the interlayer insulating film may be in direct contact with at least a portion of the semiconductor chip and at least a portion of the encapsulant present on the same plane.
• the linear expansion coefficients of the semiconductor chip and the encapsulant are different, and the peeling of the different materials of the semiconductor chip and the encapsulant due to expansion and contraction caused by the heat cycle in which the transition from a relatively low temperature at room temperature to a relatively high temperature during the operation of the semiconductor device is repeated can be suppressed, and cracks of the wiring contained in the rewiring layer can be suppressed.
• the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C is 15% or more, preferably 20% or more, more preferably 25% or more, and even more preferably 30% or more. Even when the semiconductor chip and the encapsulant are in contact with two materials with different linear expansion coefficients, from the viewpoint of suppressing the influence of the plastic deformation of the interlayer insulating film, the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C may be 500% or less, may be 480% or less, preferably 450% or less, may be 400% or less, or may be 350% or less.
• the tensile elongation at 25°C of the interlayer insulating film of the redistribution layer of the semiconductor device is preferably 15 to 500%, more preferably 20 to 480%, even more preferably 25 to 450%, and particularly preferably 30 to 350%.
• the tensile elongation of the interlayer insulating film of the redistribution layer of a semiconductor device can be measured using a resin composition capable of forming an interlayer insulating film for a FO-WLP type semiconductor device, using a bench-top precision universal testing machine (e.g., Autograph AGS-J series, manufactured by Shimadzu Corporation), using a rectangular test piece (film sample) having a width of 15 mm, a length of 200 mm, and a thickness of 30 ⁇ m.
• a bench-top precision universal testing machine e.g., Autograph AGS-J series, manufactured by Shimadzu Corporation
• the tensile elongation of the interlayer insulating film of the redistribution layer of the semiconductor device can be determined by preparing a test piece having a width of 15 mm, a length of 200 mm, and a thickness of 30 ⁇ m using a cured product obtained by curing a resin composition capable of forming an interlayer insulating film for a semiconductor device, fixing the test piece to upper and lower tensile jigs of a benchtop precision universal testing machine so that the length between the tensile jigs is 100 mm, and pulling the test piece upward at a speed of 200 mm/min.
• the tensile elongation calculated from the breaking distance using the following formula (1) can be used as the tensile elongation of the interlayer insulating film of the redistribution layer of the semiconductor device.
• Tensile elongation (%) [break distance (mm) - initial length (100 mm)] / initial length (100 mm) x 100 (1)
• FIG. 1 shows an example of a semiconductor device, and is a schematic cross-sectional view showing the schematic configuration of a FO-WLP type semiconductor device.
• the semiconductor device 1 includes a semiconductor chip 2, an encapsulant 3 (mold resin) covering the semiconductor chip 2, wiring 4 connecting the semiconductor chip 2 to an external terminal 7, and a redistribution layer 6 including an interlayer insulating film 5 covering the periphery of the wiring 4.
• FIG. 2 is a plan view of the redistribution layer 6 and the semiconductor chip 2 without illustrating the encapsulant 3, and the redistribution layer 6 has a larger area than the semiconductor chip 2 in plan view.
• the redistribution layer 6 is in direct contact with at least a portion of the semiconductor chip 2 and at least a portion of the encapsulant 3, and in particular, the interlayer insulating film 5 of the redistribution layer 6 is in direct contact with both at least a portion of the semiconductor chip 2 and at least a portion of the encapsulant 3.
• the semiconductor chip 2 is provided with a plurality of terminals 2a.
• the plurality of terminals 2a provided on the semiconductor chip 2 are electrically connected to the wiring 4 of the redistribution layer 6.
• One end of the wiring 4 is connected to the terminal 2a of the semiconductor chip 2, and the other end of the wiring 4 is connected to an external terminal 7 such as a solder bump.
• the periphery of the wiring 4 is covered with an interlayer insulating film 5.
• FIG. 3 shows a configuration of a portion of a semiconductor device, and is a schematic perspective view showing a semiconductor chip 2, an encapsulant 3 covering the semiconductor chip 2, and a redistribution layer 6 in a state in which the semiconductor chip 2 and the encapsulant 3 are spaced apart.
• FIG. 4 shows a semiconductor chip 2 used in a FO-WLP type semiconductor device, and the encapsulant 3 covering the semiconductor chip 2 and adjacent to the semiconductor chip 2, as seen from a side from which it can be seen that the semiconductor chip 2 and the encapsulant 3 are on the same plane. In FIG. 4, terminals of the semiconductor chip 2 are not shown. As shown in FIG. 1 or FIG.
• the interlayer insulating film 5 of the redistribution layer 6 is in direct contact with at least a portion of the semiconductor chip 2 and at least a portion of the encapsulant 3 adjacent to the semiconductor chip 2 that are on the same plane.
• the interlayer insulating film 5 which has a tensile elongation rate of 15% or more, is in contact with at least a portion of the semiconductor chip 2 and at least a portion of the sealing material 3 adjacent to each other on the same plane, the semiconductor chip 2 and the sealing material 3, which have different linear expansion coefficients, expand and contract due to a heat cycle that repeatedly transitions from the relatively low temperature of room temperature to the relatively high temperature during operation of the semiconductor device.
• the interlayer insulating film 5 absorbs the expansion and contraction of the different materials with different linear expansion coefficients, suppressing peeling of the semiconductor chip 2 and the sealing material 3 and also suppressing cracks in the wiring 4 contained in the rewiring layer 6.
• the semiconductor chip can be made of silicon or other materials, and can have a circuit formed inside.
• the encapsulant is not particularly limited, but preferably contains an epoxy resin, and more preferably contains an inorganic filler such as silicon dioxide, etc. Furthermore, from the viewpoint of suppressing peeling between the semiconductor chip and the encapsulant, the encapsulant preferably has a linear expansion coefficient (CTE ⁇ 1) at a temperature lower than the glass transition temperature in the range of 10 to 30 ppm/°C, more preferably in the range of 10 to 20 ppm/°C, and even more preferably in the range of 6 to 20 ppm/°C.
• CTE ⁇ 1 linear expansion coefficient
• the linear expansion coefficient (CTE ⁇ 1) at a temperature below the glass transition temperature of the encapsulant can be measured by preparing a cylindrical test piece of 8 mm ⁇ (diameter 8 mm) ⁇ height 20 mm, curing this test piece at 150°C for 1 hour, and then measuring it in compression mode using a thermomechanical analyzer under conditions of a measurement temperature range of ⁇ 30°C to 220°C and a heating rate of 10°C/min. From the measurement results, the average linear expansion coefficient from 50°C to 70°C is calculated, and this can be measured as the linear expansion coefficient (CTE ⁇ 1) at a temperature below the glass transition temperature.
• the area of the redistribution layer in a planar view is larger than the area of the semiconductor chip in a planar view, and the area S1 of the redistribution layer in a planar view is preferably 1.05 times or more, more preferably 1.1 times or more, even more preferably 1.2 times or more, and even more preferably 1.3 times or more, of the area S2 of the semiconductor chip in a planar view.
• the area S2 of the redistribution layer in a planar view may be 50 times or less, 25 times or less, or 10 times or less, of the area S2 of the semiconductor chip in a planar view.
• the area S2 of the redistribution layer in a planar view may be the same as the area S3 of the encapsulant in a planar view.
• the shape of the redistribution layer in a planar view may be the same as, different from, or similar to the shape of the semiconductor chip in a planar view.
• the redistribution layer may be a single layer, or may have a structure in which two or more layers are stacked.
• the redistribution layer may include a layer consisting of only wiring, a layer consisting of only an interlayer insulating film, and a layer consisting of wiring and an interlayer insulating film that covers the wiring.
• FO-WLP type semiconductor devices use a rewiring layer to connect the semiconductor chip to external terminals, allowing direct electrical continuity to the motherboard.
• FO-WLP type semiconductor devices do not require electrical continuity to the motherboard via an interposer board or printed wiring board, and can be made thinner than FC-BGA type semiconductor devices.
• the thickness of the redistribution layer may be 1 ⁇ m or more, 2 ⁇ m or more, 3 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, 40 ⁇ m or less, 30 ⁇ m or less, or 20 ⁇ m or less.
• the wiring can be made of any material that is highly conductive, such as copper.
• the interlayer insulating film can be formed by disposing and curing a resin composition for FO-WLP type semiconductor devices, described below, around the wiring that electrically connects the semiconductor chip and the external terminals.
• the redistribution layer includes the wiring that electrically connects the semiconductor chip and the external terminals, and an interlayer insulating film formed by curing a resin composition that has been disposed around the wiring.
• the interlayer insulating film is preferably made of a resin composition containing a thermosetting resin having an unsaturated double bond at its terminal.
• a resin composition for an interlayer insulating film for a FO-WLP type semiconductor device the thermosetting resin having an unsaturated double bond at its terminal is also called component (A) or the thermosetting resin of component (A).
• the interlayer insulating film is preferably made of a resin composition containing polyphenylene ether having an unsaturated double bond at the end and an elastomer.
• the elastomer is also called component (B) or the elastomer of component (B).
• the resin composition for the interlayer insulating film for a FO-WLP type semiconductor device preferably further contains a solvent (C).
• the solvent is also called component (C) or a solvent for component (C).
• High-frequency characteristics are required of electronic components.
• High-frequency characteristics are also required of FO-WLP type semiconductor devices mounted on electronic components. For example, they are required to have excellent electrical characteristics (low dielectric constant ( ⁇ ), low dielectric tangent (tan ⁇ )) in the high-frequency range, specifically in the frequency range of 1 GHz to 10 GHz.
• the interlayer insulating film or the resin composition for the interlayer insulating film contains a thermosetting resin having an unsaturated double bond at the end of component (A), which gives low dielectric properties to the cured product obtained by curing the resin composition and improves heat resistance.
• functional groups having an unsaturated double bond at the end include vinyl groups, vinylbenzyl groups, vinylene groups, vinylidene groups, acrylic groups, and methacrylic groups.
• the thermosetting resin having an unsaturated double bond at the end is preferably a polyphenylene ether resin having a functional group having an unsaturated double bond at its end. Polyphenylene ether resin is also called PPE resin.
• component (A) there are no particular restrictions on component (A) as long as it has a functional group having an unsaturated double bond at its end and has polyphenylene ether in the skeleton.
• Component (A) is particularly preferably a polyphenylene ether resin having a vinyl group or a styrene group at the end. Having a vinyl group or a styrene group at the end provides low dielectric properties.
• the thermosetting resin having an unsaturated double bond at the end is a polyphenylene ether resin, it is sometimes referred to as the polyphenylene ether resin of component (A) in the resin composition for the interlayer insulating film.
• the PPE resin of component (A) preferably contains a PPE resin represented by the following formula (1):
• X represents a p-valent unsubstituted or substituted aromatic hydrocarbon group
• Y is represented by the following formula (2):
• R 1 to R 4 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, or an alkenylcarbonyl group.
• Z represents a functional group containing a terminal unsaturated double bond, and is a vinyl group, a vinylene group, or a group represented by the following formula (3):
• R5 represents a hydrogen atom or an alkyl group.] or a (meth)acrylic group represented by the following formula (4):
• R 6 to R 8 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, or an alkyny
• the PPE resin of component (A) preferably contains at least one type selected from the group consisting of modified PPE resins represented by the following formula (5) and modified PPE resins represented by the following formula (6).
• R 5 represents a hydrogen atom or an alkyl group
• X represents a p-valent unsubstituted or substituted aromatic hydrocarbon group
• Y represents an unsubstituted or substituted phenol repeating unit represented by formula (2)
• m represents an integer from 1 to 100
• n represents 0 or an integer from 1 to 6
• p represents an integer of 1 to 4.
• R 6 to R 8 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, or an alkynyl group;
• X represents a p-valent unsubstituted or substituted aromatic hydrocarbon group;
• an x-valent (x is an integer of 1 or more) hydrocarbon group refers to an x-valent group generated by removing x hydrogen atoms from a carbon atom of a hydrocarbon.
• X is a p-valent unsubstituted or substituted aromatic hydrocarbon group, and X refers to a monovalent to tetravalent group generated by removing 1 to 4 hydrogen atoms from a carbon atom of an aromatic hydrocarbon, which may or may not be substituted.
• alkyl group means a monovalent saturated hydrocarbon group.
• the alkyl group is preferably a C 1 -C 10 alkyl group, more preferably a C 1 -C 6 alkyl group, even more preferably a C 1 -C 4 alkyl group, and particularly preferably a C 1 -C 2 alkyl group.
• alkyl groups examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, and a hexyl group.
• a C 1 alkyl group represents an alkyl group having one carbon atom (a methyl group).
• the number written after "C" representing a saturated hydrocarbon group or an unsaturated hydrocarbon group represents the number of carbon atoms contained in the saturated hydrocarbon group or the unsaturated hydrocarbon group.
• the symbol “-" between “C” and “C” represents the range of the number written after C.
• a "C 1 -C 10 alkyl group” means an "alkyl group having 1 to 10 carbon atoms.”
• alkenyl group refers to a monovalent unsaturated hydrocarbon group having at least one carbon-carbon double bond.
• the alkenyl group is preferably a C 2 -C 10 alkenyl group, more preferably a C 2 -C 6 alkenyl group, and even more preferably a C 2 -C 4 alkenyl group.
• alkenyl groups include ethenyl group (vinyl group), 1-propenyl group, 2-propenyl group, 1-butenyl group, 2-butenyl group, isobutenyl group, 1-pentenyl group, and 1-hexenyl group.
• the groups -CR 5 ⁇ CH 2 and -CR 6 ⁇ CR 7 R 8 in the above formula are also alkenyl groups.
• alkynyl group refers to a monovalent unsaturated hydrocarbon group having at least one carbon-carbon triple bond.
• the alkynyl group is preferably a C2 - C10 alkynyl group, more preferably a C2 - C6 alkynyl group, and even more preferably a C2 - C4 alkynyl group.
• alkynyl groups include ethynyl, 1-propynyl, 2-propynyl, butynyl, isobutynyl, pentynyl, and hexynyl groups.
• alkenylcarbonyl group refers to a carbonyl group substituted with the above alkenyl group, examples of which include an acryl group, a methacryl group, etc.
• the portion represented by -(Y) m - in formula (1), (5) or (6) corresponds to the main chain of the PPE resin.
• R 1 and R 3 in the unsubstituted or substituted phenol repeating unit Y represent hydrogen atoms
• R 2 and R 4 represent methyl groups.
• one end of the portion represented by -(Y) m - is bonded to the aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to the terminal group (Z) representing a functional group containing an unsaturated double bond via n methylene groups.
• one end of the portion represented by -(Y) m - is bonded to the aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to a methacryloyl group via n methylene groups.
• one end of the portion represented by -(Y) m - is bonded to the aromatic hydrocarbon group X via an oxygen atom, and the other end is bonded to a styrene group via n methylene groups.
• the moiety represented by -CR 6 ⁇ CR 7 R 8 may be located at any of the ortho, meta, and para positions relative to the methylene group.
• n in formula (1), (5), or (6) is 0 or an integer from 1 to 4. In one embodiment, n in formula (1), (5), or (6) is 0, 1, or 2. In one embodiment, n in formula (1) is 0 or 1. In another embodiment, R 6 to R 8 in formula (6) are all hydrogen atoms.
• the number m of Y in the repeating units of formula (1), (5) or (6) is preferably 1 to 80, more preferably 1 to 30, and even more preferably 1 to 5.
• the aromatic hydrocarbon group X of formula (1), (5) or (6) has p moieties represented by -(Y) m - bonded via oxygen atoms.
• p is 2 or 3. More preferably, p is 2.
• X is preferably a group represented by the following formula (7) or (8): [In the formula, R 9 to R 16 each independently represent a hydrogen atom, a C 1 -C 6 alkyl group, or a phenyl group.] [In formula (8), R 17 to R 24 each independently represent a hydrogen atom, a C 1 -C 6 alkyl group, a phenyl group or a naphthyl group, and A represents a C 0 -C 20 linear, branched or cyclic divalent hydrocarbon group.], and X is more preferably represented by the following formula: It may have a structure represented by the following formula:
• a in formula (8) include divalent hydrocarbon groups such as methylene, ethylidene, 1-methylethylidene, 1,1-propylidene, 1,4-phenylenebis(1-methylethylidene), 1,3-phenylenebis(1-methylethylidene), cyclohexylidene, phenylmethylene, naphthylmethylene, and 1-phenylethylidene.
• divalent hydrocarbon groups such as methylene, ethylidene, 1-methylethylidene, 1,1-propylidene, 1,4-phenylenebis(1-methylethylidene), 1,3-phenylenebis(1-methylethylidene), cyclohexylidene, phenylmethylene, naphthylmethylene, and 1-phenylethylidene.
• the main chain terminal of the polyphenylene ether resin of component (A) may be a polyphenylene ether resin having an average of 1.5 to 5 functional groups represented by formula (1), (5), or (6) per molecule.
• the terminal functional group is preferably a methacrylic group and/or an acrylic group from the viewpoint of imparting even better heat resistance when the resin composition is cured, and is more preferably a methacrylic group from the viewpoint of even better resin fluidity during hot molding.
• thermosetting resin having an unsaturated double bond at the end contained in the resin composition used for the interlayer insulating film is preferably a thermosetting resin having a styrene group at the end and a phenylene ether skeleton in the main chain.
• the compound is represented by the following formula (9), because it can more easily obtain the effects of the present invention, has excellent high-frequency characteristics, and has a small temperature dependency of the dielectric characteristics (especially tan ⁇ ) (change in the measured value at high temperature (120°C) relative to the measured value at room temperature (about 25°C)).
• X is represented by formula (7) or (8).
• a and b are integers between 0 and 100, with at least one not being 0.
• a resin composition for an interlayer insulating film may be applied onto a semiconductor chip and an encapsulant using a rotary spin coater to form an interlayer insulating film. Therefore, it is desirable that a uniform coating film can be formed on the semiconductor chip and the encapsulant when the resin composition for an interlayer insulating film is applied to the semiconductor chip and the encapsulant using a spin coater, and that a coating film is formed that is less likely to cause warping of the semiconductor chip and the encapsulant due to shrinkage or the like that occurs when the resin composition is cured after the coating film is formed.
• the number average molecular weight of component (A) is 500 or more and 5,000 or less.
• the number average molecular weight of component (A) is more preferably 750 or more and 3,500 or less, even more preferably 800 or more and 3,000 or less, and even more preferably 1,000 or more and 2,500 or less. If the number average molecular weight (Mn) of component (A) is too low, the toughness of the interlayer insulating film obtained by curing the resin composition may decrease.
• the number average molecular weight (Mn) of component (A) or component (B) can be measured, for example, from a polystyrene equivalent value measured by gel permeation chromatography (GPC).
• the number average molecular weight (Mn) can be measured, for example, using a high performance liquid chromatography (e.g., LC-2OAD, manufactured by Shimadzu Corporation) with a column (e.g., KF-802, manufactured by Showa Denko K.K.) and a tetrahydrofuran (THF) solution as a solvent.
• a high performance liquid chromatography e.g., LC-2OAD, manufactured by Shimadzu Corporation
• a column e.g., KF-802, manufactured by Showa Denko K.K.
• THF tetrahydrofuran
• component (A) Commercially available products can be used as component (A).
• the commercial product of component (A) is, for example, the modified PPE resin represented by formula (5) having 1.5 to 5 terminal methacryloyl groups per molecule represented by formula (3), and can be, for example, the product name "NORYL SA9000" manufactured by SABIC Innovation Plastics.
• the modified PPE resin represented by formula (6) can be, for example, OPE 2St 1200 or OPE 2st 2200 (manufactured by Mitsubishi Gas Chemical Company, Inc.).
• Component (A) can be prepared by a known method.
• a suitable p-hydric phenol having a structure represented by X-(OH) p (wherein X and p are as defined above) (e.g., 2,2',3,3',5,5'-hexamethylbiphenyl-4,4'-diol) and a compound represented by the following formula (2'') can be used.
• Component (A) can be prepared by a process which includes oxidatively copolymerizing, by known methods, a suitable monohydric phenol (such as 2,6-dimethylphenol) having a structure represented by the following formula: to prepare a hydroxyl-terminated polyphenylene ether resin, and modifying the resulting resin by reaction with a suitable modifying agent, for example chloromethylstyrene.
• a suitable monohydric phenol such as 2,6-dimethylphenol having a structure represented by the following formula: to prepare a hydroxyl-terminated polyphenylene ether resin, and modifying the resulting resin by reaction with a suitable modifying agent, for example chloromethylstyrene.
• the interlayer insulating film preferably contains an elastomer.
• the elastomer in this application is a material (specifically, a natural or synthetic polymer material) that is elastic at room temperature (23°C to 25°C).
• elastomers include thermosetting elastomers, thermoplastic elastomers, natural rubber, synthetic rubber, conjugated diene compound polymers, aromatic compound-conjugated diene copolymers, hydrogenated aromatic compound-conjugated diene copolymers, polystyrene-based elastomers, polyolefin-based elastomers, polyester-based elastomers, polyurethane-based elastomers, polyamide-based elastomers, and elastomers having a core-shell structure.
• the interlayer insulating film is preferably made of a resin composition containing a thermosetting resin having an unsaturated double bond at the end and an elastomer.
• the elastomer is also called component (B) or the elastomer of component (B).
• component (B) the elastomer of component (B)
• an interlayer insulating film or a resin composition for an interlayer insulating film can obtain a rewiring layer including an interlayer insulating film having a tensile elongation of 15% or more at 25°C.
• a resin composition for a FO-WLP type semiconductor device can obtain low dielectric properties and ease of application of the resin composition when using a spin coater due to the thermosetting resin of component (A), and can obtain an interlayer insulating film having a tensile elongation of 15% or more at 25°C due to the elastomer of component (B).
• the elastomer of component (B) is preferably a block copolymer containing hard segments and soft segments, and the ratio of hard segments to soft segments (hard segments:soft segments) contained in the elastomer is preferably 1:99 to 45:55. If the ratio of hard segments to soft segments of the elastomer of component (B) is within the range of 1:99 to 45:55, the tensile elongation at 25°C of the interlayer insulating film obtained by curing the resin composition is 15% or more, which is preferable.
• the ratio of hard segments to soft segments of the elastomer of component (B) is more preferably 1:99 to 44:56, and even more preferably 10:90 to 40:60.
• the ratio of hard segments to soft segments is preferably a weight ratio or a mass ratio. If the elastomer of component (B) is a commercially available product, the catalog value may be referred to for the ratio of hard segments to soft segments.
• the hard segment refers to the portion having a glass transition temperature (Tg) of 0°C or more and less than 130°C
• the soft segment refers to the portion having a Tg less than 0°C, and is preferably a block copolymer of a hard segment and a soft segment.
• Tg glass transition temperature
• the glass transition temperature Tg can be measured by differential scanning calorimetry (DSC).
• Hard segments in block copolymers include methyl (meth)acrylate units and styrene units.
• Soft segments include n-butyl acrylate units and butadiene units.
• (meth)acrylate is a general term for acrylate and methacrylate, and the same applies to other similar expressions.
• (Meth)acrylic groups refer to acrylic and methacrylic groups.
• the elastomer of component (B) is preferably a thermoplastic elastomer, and examples of such elastomers include those specified in JIS K6418, such as styrene-based thermoplastic elastomers (TPS), olefin-based thermoplastic elastomers (TPO), urethane-based thermoplastic elastomers (TPU), ester-based thermoplastic elastomers (TPC), amide-based thermoplastic elastomers (TPA), thermoplastic rubber crosslinked bodies (TPV), and other thermoplastic elastomers (TPZ) having compositions or structures not included in these classifications.
• TPS styrene-based thermoplastic elastomers
• TPO olefin-based thermoplastic elastomers
• TPU urethane-based thermoplastic elastomers
• TPC ester-based thermoplastic elastomers
• TPA thermoplastic rubber crosslinked bodies
• TPZ thermoplastic elasto
• the resin composition used in the FO-WLP type semiconductor device preferably contains a styrene-based thermoplastic elastomer, from the viewpoint of good electrical properties, particularly when used in the high frequency range.
• the styrene-based thermoplastic elastomer may be a styrene-based thermoplastic elastomer specified in JIS K6418, which is at least a three-block copolymer consisting of styrene and a diene, and in which the two blocks (hard segments) at both ends are polystyrene, and the inner block (one or more soft segments) is made of polydiene or hydrogenated polydiene.
• the elastomer of component (B) may be a rubber-like copolymer of carboxylated acrylonitrile and butadiene, the end of which is modified with a carboxyl group, as specified in JIS K6397 (XNBR, also called “carboxylated nitrilobutadiene rubber”).
• XNBR also called "carboxylated nitrilobutadiene rubber”
• the elastomer when the elastomer is applied to a semiconductor chip and an encapsulant using a spin coater, a coating film of approximately uniform thickness can be formed with little variation in thickness.
• the elastomer of component (B) is XNBR
• the ratio of the hard segment consisting of the carboxylated acrylonitrile unit and the soft segment consisting of butadiene can be measured from the content of the carboxyl group contained in component (B) in the resin composition.
• the content of the carboxyl group of component (B) can be measured using, for example, a nuclear magnetic resonance (NMR) device.
• NMR nuclear magnetic resonance
• a styrene-based thermoplastic elastomer may be styrene/butadiene/styrene block copolymer (SBS).
• Styrene/butadiene/styrene block copolymer (SBS) is an unhydrogenated block copolymer.
• the resin composition includes a partially hydrogenated elastomer, styrene/butadiene/butylene/styrene copolymer (SBBS) as component (B), the resin composition can be similarly applied well to a semiconductor chip and an encapsulant.
• the elastomer of component (B) may be a styrene/ethylene/butylene/styrene block copolymer (SEBS) obtained by fully hydrogenating a styrene/butadiene/styrene block copolymer.
• SEBS styrene/ethylene/ethylene/propylene/styrene block copolymer
• SEEPS styrene/ethylene/ethylene/propylene/styrene block copolymer
• the ratio of hard segments consisting of styrene units to soft segments other than styrene units can be measured, for example, from the content of styrene contained in component (B) in the resin composition.
• the content of styrene contained in component (B) in the resin composition can be measured, for example, using nuclear magnetic resonance (NMR).
• the integral value of the peak in the range of 5.5 ppm to 6.5 ppm, which corresponds to styrene, and the integral value of the peak in the other ranges are calculated, and the ratio can be calculated from the obtained values.
• the number average molecular weight (Mn) of component (B) is preferably 40,000 or more and 600,000 or less, more preferably 50,000 or more and 150,000 or less, and even more preferably 60,000 or more and 120,000 or less.
• the number average molecular weight (Mn) of component (B) can be measured in the same manner as described above, for example, from the polystyrene equivalent value measured by gel permeation chromatography (GPC).
• Component (B) may be a commercially available product.
• commercially available products of component (B) include products manufactured by JSR Corporation under the trade names "TR2827", “TR2000” and “TR2003", products manufactured by Asahi Kasei Corporation under the trade names “Tuftec (trademark) P1083", “Tuftec (trademark) P1500", “Tuftec (trademark) P5051” and “Tuftec (trademark) H1221", products manufactured by Zeon Corporation under the trade name “Nipol (trademark) 1072", products manufactured by Kuraray Co., Ltd. under the trade names "Septon (trademark) 4033” and “Septon (trademark) 4044", and products manufactured by Kraton under the trade name "KRATON (trademark) G1652MU”.
• the resin composition preferably further contains a solvent (C).
• the solvent is also referred to as component (C) or a solvent for component (C).
• component (C) a solvent for component (C)
• components (A) and (B) are easily dissolved or dispersed, and when the resin composition is applied to a semiconductor chip and an encapsulant using, for example, a spin coater, a coating film with little variation in thickness and a substantially uniform thickness can be formed.
• the solvent for component (C) is unlikely to remain in the coating film, making it possible to suppress the deterioration of the dielectric properties.
• the solvent for component (C) is preferably an organic solvent.
• the organic solvent preferably contains at least one selected from the group consisting of aromatic solvents and ketone solvents.
• the solvent for component (C) is preferably at least one selected from the group consisting of toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, acetophenone, cyclohexanenone, cyclohexane, dimethyl carbonate, methylcyclohexanone, and ⁇ -butyrolactone.
• the solvent for component (C) may be used alone or in combination of two or more.
• the solvent for component (C) may be toluene or cyclohexanone, and from the viewpoint of toxicity, cyclohexanone is preferably used.
• the resin composition can be used as a varnish by dissolving or dispersing component (A) and component (B) in the solvent for component (C).
• the varnish made of the resin composition containing component (A), component (B), and component (C) preferably has a first viscosity and a second viscosity as described later.
• the varnish made of the resin composition containing component (A), component (B), and component (C) preferably has a thixotropy index TI as described later.
• Component (C) may be a commercially available product.
• commercially available components (C) include toluene (toluene concentration 100% by mass, manufactured by Taishin Chemical Co., Ltd.), anone (cyclohexanone) (cyclohexanone concentration 90-100% by mass, manufactured by Taishin Chemical Co., Ltd.), and methyl ethyl ketone (MEK) (2-butanone) (2-butanone concentration 90-100% by mass, manufactured by Taishin Chemical Co., Ltd.).
• toluene toluene concentration 100% by mass, manufactured by Taishin Chemical Co., Ltd.
• anone cyclohexanone
• MEK methyl ethyl ketone
• the resin composition may further include an additive (D).
• the additive (D) may also be referred to as component (D) or an additive of component (D).
• the additive of component (D) includes at least one selected from the group consisting of organic peroxides, coupling agents, ion trapping agents, leveling agents, antioxidants, viscosity modifiers, and flame retardants.
• the resin composition includes an organic peroxide as the additive of component (D)
• the reactivity of the resin composition can be increased.
• the resin composition includes a coupling agent as the additive of component (D)
• the adhesion between the semiconductor chip and the encapsulant and the resin composition applied thereto can be increased.
• the additive of component (D) preferably includes at least one selected from the group consisting of organic peroxides and coupling agents. It is more preferable that the additive of component (D) is an organic peroxide.
• the additive of component (D) preferably contains an organic peroxide that initiates a radical polymerization reaction, taking into consideration the reactivity of components (A) and (B).
• an organic peroxide that initiates a radical polymerization reaction, taking into consideration the reactivity of components (A) and (B).
• a commercially available organic peroxide can be used.
• commercially available organic peroxide products that can be used include, for example, products under the trade names "Perbutyl (trademark) Z (tert-butyl peroxybenzoate)” and “Percumyl (trademark) D (bis(1-methyl-1-phenylethyl) peroxide)” manufactured by NOF Corporation, peroxycarbonate, etc.
• a coupling agent is a compound having two or more different functional groups in one molecule, one of which is a functional group that chemically bonds with an inorganic material, and the other is a functional group that chemically bonds with an organic material.
• Examples of coupling agents include at least one selected from the group consisting of silane coupling agents, aluminum coupling agents, and titanium coupling agents, and may also be silane coupling agents.
• One type of coupling agent may be used, or two or more types may be used in combination.
• Examples of functional groups possessed by silane coupling agents include alkoxy groups, vinyl groups, epoxy groups, styryl groups, methacryl groups, acrylic groups, amino groups, isocyanurate groups, ureido groups, mercapto groups, sulfide groups, isocyanate groups, etc.
• the additive may be a commercially available product.
• silane coupling agent for example, products manufactured by Shin-Etsu Silicone Co., Ltd. under the trade name "KBM503 (3-methacryloxypropyltrimethoxysilane)" and “KBM 1003 (vinyltrimethoxysilane)” and products manufactured by Momentive Performance Materials Japan under the trade name "Coatsil MP200 Silane” can be used.
• the resin composition may further include a fluidity imparting agent (E).
• the fluidity imparting agent (E) is also referred to as component (E) or a fluidity imparting agent of component (E).
• a fluidity imparting agent refers to a compound having a function of imparting fluidity to a resin composition.
• imparting fluidity means that the viscosity of the resin composition measured under the conditions described below can be reduced to 1,000 mPa ⁇ s or less.
• the fluidity imparting agent of component (E) include at least one compound selected from the group consisting of compounds having a butadiene skeleton with 1,2 vinyl groups, and compounds having an isocyanuric ring structure and two allyl groups in one molecule and being liquid at 25°C.
• the compound having a butadiene skeleton with 1,2 vinyl groups has a number average molecular weight of 1,000 to 10,000. By setting the number average molecular weight at this level, it is possible to obtain good fluidity and thermal expansion coefficient.
• the number average molecular weight (Mn) can be determined by using a calibration curve based on standard polystyrene by gel permeation chromatography (GPC) in the same manner as described above.
• Examples of compounds having a butadiene skeleton with 1,2 vinyl groups include butadiene polymers having 1,2 vinyl groups, block copolymers containing a butadiene block having 1,2 vinyl groups and a styrene block, and styrene-butadiene copolymers having 1,2 vinyl groups.
• Butadiene polymers with 1,2 vinyl groups include 1,2-polybutadiene homopolymers (product names "B-3000” and "B-1000") manufactured by Nippon Soda Co., Ltd., and the partially hydrogenated product "BI-3015.”
• Examples of styrene-butadiene block copolymers with a 1,2 vinyl structure include “1,2-SBS-L42" and “1,2-H-SBS-L” manufactured by Nippon Soda Co., Ltd.
• Examples of styrene-butadiene copolymers having 1,2 vinyl groups include “Ricon 181” and “Ricon 100” manufactured by CRAY VALLEY.
• the inclusion of a compound having an isocyanuric ring structure and two allyl groups in one molecule and liquid at 25°C reduces the melt viscosity of the resin composition and improves embeddability in wiring.
• the inclusion of two allyl groups makes it possible to obtain extremely good low dielectric properties. For example, if a compound having an isocyanuric ring structure and three allyl groups in one molecule is used instead of a compound having an isocyanuric ring structure and two allyl groups in one molecule and liquid at 25°C, sufficient low dielectric properties cannot be obtained. Although the details are not clear, it is presumed that the use of a compound having three allyl groups results in a three-dimensional cross-linked structure, resulting in insufficient dielectric properties.
• the molecular weight of the compound that has an isocyanuric ring structure and two allyl groups in one molecule and is liquid at 25°C is preferably 300 to 400, and more preferably 320 to 400. Having a molecular weight within the above range results in excellent dielectric properties and fluidity.
• the compound that has an isocyanuric ring structure and two allyl groups in one molecule and is liquid at 25°C is preferably isocyanuric acid (diallylated isocyanuric acid derivative) represented by the following formula (10).
• R 25 represents a C 4 -C 14 alkyl group.
• R 25 is preferably a C 8 -C 14 alkyl group, and particularly preferably a C 10 -C 12 alkyl group.
• isocyanuric acid diallylated isocyanuric acid derivative represented by the formula (10)
• L-DAIC trade name
• the resin composition for FO-WLP type semiconductor devices may contain component (A) and component (B), may contain component (C), may contain components other than components (A), (B), and (C), or may not contain components other than components (A), (B), and (C).
• the resin composition may consist of only components (A), (B), and (C).
• the content of component (A) in the resin composition is preferably 10 to 75% by mass, more preferably 10 to 74% by mass, even more preferably 10 to 73% by mass, even more preferably 15 to 72% by mass, and particularly preferably 20 to 72% by mass, when the total of components (A) and (B) is taken as 100% by mass.
• the content of component (A) is 10 to 75% by mass relative to the total amount of components (A) and (B) in the resin composition, a cured product having a low dielectric constant and a low dielectric tangent can be obtained, and an interlayer insulating film having good electrical properties suitable for use in the high frequency range can be formed.
• component (A) when the content of component (A) is 10 to 75% by mass relative to the total amount of components (A) and (B) in the resin composition (100% by mass), the tensile elongation can be improved. As a result, even when an interlayer insulating film is formed that directly contacts both a semiconductor chip and an encapsulant with different linear expansion coefficients, peeling of two materials with different linear expansion coefficients can be suppressed, and an interlayer insulating film that can suppress cracks in the wiring contained in the rewiring layer can be obtained.
• the content of component (A) in the resin composition when including a solvent for component (C), is preferably 3.0 to 30.0% by mass, more preferably 5.0 to 25.0% by mass, and even more preferably 6.0 to 20.0% by mass, based on 100% by mass of the total of components (A), (B), and (C).
• a cured product having a good tensile elongation, a low dielectric constant, and a low dielectric loss tangent can be obtained, and a cured product having good electrical properties suitable for use in the high frequency range can be obtained.
• component (A) in the resin composition is 3.0 to 30.0% by mass, based on 100% by mass of the total of components (A), (B), and (C), a coating film of approximately uniform thickness can be formed when the resin composition is applied using, for example, a spin coater.
• the content of component (B) in the resin composition is preferably 25 to 90 mass%, more preferably 26 to 90 mass%, even more preferably 27 to 90 mass%, even more preferably 28 to 85 mass%, and particularly preferably 28 to 80 mass%, when the total of components (A) and (B) is 100 mass%.
• component (E) is not included in the resin composition, the content of component (B) in the resin composition may be 31 to 90 mass%, 35 to 90 mass%, 40 to 90 mass%, 45 to 85 mass%, or 50 to 80 mass%, when the total of components (A) and (B) is 100 mass%.
• component (B) When the content of component (B) is 25 to 90% by mass relative to the total amount of components (A) and (B) in the resin composition, or when the resin composition does not contain component (E), and the content of component (B) is 31 to 90% by mass relative to the total amount of components (A) and (B), the tensile elongation is good due to component (B) in the resin composition, and even when an interlayer insulating film is formed that directly contacts both a semiconductor chip and an encapsulant having different linear expansion coefficients, peeling of two materials having different linear expansion coefficients can be suppressed, and cracks in the wiring contained in the rewiring layer can be suppressed.
• component (B) when the content of component (B) is 25 to 90% by mass relative to the total amount of components (A) and (B) in the resin composition, or when the resin composition does not contain component (E), and the content of component (B) is 31 to 90% by mass relative to the total amount of components (A) and (B) in the resin composition, a cured product having a low dielectric constant and a low dielectric loss tangent can be obtained, and an interlayer insulating film having good electrical properties suitable for use in the high frequency range can be formed.
• a cured product is obtained that has a tensile elongation of 15% or more at 25°C, a low dielectric constant and a low dielectric tangent, and good electrical properties when used in the high frequency range of 5 GHz or more, for example 10 GHz.
• the content of component (B) in the resin composition is preferably 2.0 to 40.0% by mass, more preferably 3.0 to 35.0% by mass, and even more preferably 3.0 to 30.0% by mass, based on the total amount of components (A), (B), and (C) (100% by mass).
• the content of component (B) in the resin composition is 2.0 to 40.0% by mass, a cured product having a good tensile elongation, a low dielectric constant, and a low dielectric loss tangent can be obtained, and a cured product having good electrical properties suitable for use in the high frequency range can be obtained.
• component (B) in the resin composition is 2.0 to 40.0% by mass, based on the total amount of components (A), (B), and (C) (100% by mass), a coating film of approximately uniform thickness can be formed when the resin composition is applied using, for example, a spin coater.
• the content of components (B) and (E) in the resin composition is preferably 31 to 90% by mass, more preferably 35 to 90% by mass, even more preferably 40 to 90% by mass, even more preferably 45 to 85% by mass, and particularly preferably 45 to 80% by mass, when the total of components (A), (B), and (E) is taken as 100% by mass.
• components (B) and (E) are 31 to 90% by mass relative to the total amount of components (A), (B), and (E) in the resin composition, due to the action of component (E) in the resin composition, even when the amount of component (B) is small, a cured product having a low dielectric constant and a low dielectric dissipation factor can be obtained, and an interlayer insulating film having good electrical properties suitable for use in the high frequency range can be formed.
• a resin composition having a total content of 31 to 90% by mass can be used to obtain a cured product having a tensile elongation of 15% or more at 25°C, a low dielectric constant and a low dielectric dissipation factor, and good electrical properties when used in the high frequency range of 5 GHz or more, for example 10 GHz.
• the content of component (C) in the resin composition is preferably 30 to 95% by mass, more preferably 40 to 92% by mass, and even more preferably 50 to 91% by mass, based on the total amount of components (A), (B), and (C) (100% by mass). If the content of component (C) is within the range of 30 to 95% by mass based on the total amount of components (A), (B), and (C) (100% by mass), components (A) and (B) can be easily dissolved or dispersed in component (C), and when the resin composition is applied to a semiconductor substrate using, for example, a coating film with little variation in thickness and a substantially uniform thickness can be formed, and a cured product with suppressed warping of the semiconductor chip can be obtained.
• the resin composition can be used as a varnish by dissolving or dispersing components (A) and (B) in a solvent for component (C), but the solvent evaporates and is substantially absent from the cured product of the resin composition. "Substantially free” means that a trace amount (1 mass % or less) of solvent may be present in the cured product. Even if the resin composition contains component (E), the content of component (C) may be 30 to 95 mass % when the total of components (A), (B), and (C) is 100 mass %.
• the content of additive component (D) in the resin composition may be 10.0 mass% or less, 8.0 mass% or less, or 5.0 mass% or less, based on 100 mass% of the resin composition.
• the content of additive component (D) in the resin composition may be 0.10 mass% or more.
• the content of additive component (D) may be 10.0 mass% or less, based on 100 mass% of the resin composition.
• the content of the fluidity imparting agent in the resin composition may be 10.0% by mass or less, 9.0% by mass or less, or 8.0% by mass or less, relative to 100% by mass of the resin composition, provided that the total content of components (B) and (E) is 31 to 90% by mass when the total of components (A), (B) and (E) in the resin composition is taken as 100% by mass.
• the content of the additive component (E) in the resin composition may be 0.10% by mass or more.
• the first viscosity of the resin composition at 25°C and 10 rpm using a rotational viscometer is preferably within the range of 300 mPa ⁇ s to 4,000 mPa ⁇ s. If the first viscosity of the resin composition is within the range of 300 mPa ⁇ s to 4,000 mPa ⁇ s, even when the resin composition is applied, for example, using a spin coater so as to contact both the semiconductor chip and the encapsulant, there is little variation in thickness, and a coating film of approximately uniform thickness can be formed, and warping of the semiconductor chip during curing can be suppressed.
• the first viscosity of the resin composition is 320 mPa ⁇ s to 4,000 mPa ⁇ s, and even more preferably 330 mPa ⁇ s to 2,000 mPa ⁇ s.
• the resin composition containing the fluidity imparting agent of component (E) preferably has a first viscosity in the range of 300 mPa ⁇ s to 1,000 mPa ⁇ s, more preferably in the range of 310 mPa ⁇ s to 900 mPa ⁇ s, even more preferably in the range of 320 mPa ⁇ s to 800 mPa ⁇ s, and particularly preferably in the range of 330 mPa ⁇ s to 600 mPa ⁇ s.
• the rotational viscometer can be measured using, for example, a TVE type viscometer (cone rotor: 1° 34' x R24, manufactured by Toki Sangyo Co., Ltd.).
• the second viscosity of the resin composition at 25°C and 1 rpm using a rotational viscometer is preferably within the range of 200 mPa ⁇ s to 4,200 mPa ⁇ s. If the second viscosity of the resin composition is within the range of 200 mPa ⁇ s to 4,200 mPa ⁇ s, even when the resin composition is applied to contact both the semiconductor chip and the encapsulant using a spin coater, the thickness of the coating film can be reduced and a coating film of approximately uniform thickness can be formed, and warping of the semiconductor chip during curing can be suppressed.
• the second viscosity of the resin composition is more preferably within the range of 210 mPa ⁇ s to 4,000 mPa ⁇ s, even more preferably within the range of 220 mPa ⁇ s to 4,000 mPa ⁇ s, and particularly preferably within the range of 230 mPa ⁇ s to 3,500 mPa ⁇ s.
• the second viscosity of the resin composition containing the fluidity imparting agent of component (E) is preferably within the range of 200 mPa ⁇ s to 1,100 mPa ⁇ s, more preferably within the range of 210 mPa ⁇ s to 1,000 mPa ⁇ s, even more preferably within the range of 220 mPa ⁇ s to 900 mPa ⁇ s, and particularly preferably within the range of 230 mPa ⁇ s to 600 mPa ⁇ s.
• the resin composition containing components (A), (B) and (C) preferably has a thixotropic index TI, which is the ratio of the second viscosity to the first viscosity, in the range of 0.5 to 3.0, and has thixotropic properties similar to those of a Newtonian fluid.
• Newtonian fluid refers to a fluid having a property in which shear stress is proportional to shear rate.
• the thixotropic index TI which is the ratio of the second viscosity to the first viscosity of the resin composition, is in the range of 0.5 to 3.0, for example, even when applied to a semiconductor substrate using a spin coater, a coating film with a substantially uniform thickness can be formed with little variation in thickness, and warping of the semiconductor substrate during curing can be suppressed.
• the resin composition preferably has a thixotropic index, which is the ratio of the second viscosity to the first viscosity, in the range of 0.6 to 1.2, more preferably in the range of 0.70 to 1.19, even more preferably in the range of 0.80 to 1.19, particularly preferably in the range of 0.90 to 1.10, and more particularly preferably in the range of 1.00 to 1.10.
• the resin composition containing the fluidity imparting agent of component (E) preferably has a thixotropy index TI, which is the ratio of the second viscosity to the first viscosity, in the range of 0.5 to 3.0.
• the resin composition constituting the interlayer insulating film of the FO-WLP type semiconductor device has a dielectric constant ( ⁇ ) of 4.0 or less, more preferably 3.5 or less, even more preferably 3.0 or less, even more preferably 2.8 or less, and particularly preferably 2.7 or less.
• the lower limit of the dielectric constant ( ⁇ ) of the coating film made of the cured product obtained by curing the resin composition constituting the interlayer insulating film is not particularly limited, but may be 1.0 or more, or may be 1.5 or more.
• the dielectric loss tangent (tan ⁇ ) of the coating film made of the resin composition constituting the interlayer insulating film is preferably 0.010 or less, more preferably 0.005 or less, and even more preferably 0.003 or less.
• the lower limit of the dielectric loss tangent (tan ⁇ ) of the coating film made of the resin composition constituting the interlayer insulating film is not particularly limited, but may be 0.0001 or more, or may be 0.0005 or more. If the coating film made of a resin composition constituting an interlayer insulating film of a FO-WLP type semiconductor device has a relative dielectric constant of 4.0 or less and a dielectric loss tangent (tan ⁇ ) of 0.010 or less, the coating film has a low dielectric constant and a low dielectric loss tangent, and has good electrical properties when used in a high frequency range.
• a coating film with good electrical properties can be obtained even when the semiconductor device is used in a high frequency range such as a fifth generation communication system "5G" which is expected to have a large capacity and high speed communication.
• a semiconductor device expected to be used in a high frequency range such as "5G” may have a relative dielectric constant ( ⁇ ) measured at a dielectric resonance frequency of 10 GHz by a dielectric resonance method (SPDR method) in the range of 1.0 to 4.0 or 1.5 to 3.0.
• the dielectric loss tangent (tan ⁇ ) may also be in the range of 0.0001 to 0.010 or 0.0005 to 0.005.
• the relative dielectric constant ( ⁇ ) measured at a dielectric resonance frequency of 10 GHz by the dielectric resonance method (SPDR method) may be in the range of 1.0 to 4.0, or 1.5 to 3.0.
• the dielectric loss tangent (tan ⁇ ) may be in the range of 0.0001 to 0.010, or 0.0005 to 0.005.
• the resin composition contains components (A) and (B), and when applied to both the semiconductor chip and the encapsulant, the resin composition absorbs the expansion and contraction of the semiconductor chip and the encapsulant, which have different linear expansion coefficients, caused by a heat cycle that repeatedly transitions from the relatively low temperature of room temperature to the relatively high temperature during operation of the semiconductor device, with the interlayer insulating film made of the resin composition, thereby suppressing peeling between the semiconductor chip and the encapsulant and suppressing cracks in the wiring contained in the rewiring layer.
• the resin composition has a film sample cured to a width of 15 mm, length of 200 mm, and thickness of 100 ⁇ m.
• the linear expansion coefficient at 50 to 60°C (323K to 333K) is preferably 200 ppm/K or less, more preferably 180 ppm/K or less. It is even more preferably 150 ppm/K or less, and may be 10 ppm/K or more, 20 ppm/K or more, or 30 ppm/K or more.
• the resin composition contains components (A) and (B), and may also contain component (E).
• the linear expansion coefficient of the film-like cured product obtained by curing the resin composition is 200 ppm/K or less, the expansion and contraction of the semiconductor chip and the encapsulant due to the heat cycle can be absorbed by the interlayer insulating film made of the resin composition, peeling of the semiconductor chip and the encapsulant can be suppressed, and cracks in the wiring contained in the rewiring layer can be suppressed.
• the resin composition can be used in a FO-WLP type semiconductor device and can be used around the wiring of the semiconductor device.
• the resin composition preferably does not contain an inorganic filler such as silica.
• the interlayer insulating film formed by curing the resin composition is then drilled by laser irradiation in a subsequent process to form via holes for wiring.
• the interlayer insulating film contains an inorganic filler such as silica, the silica portion cannot be well removed during the laser treatment, which may make it difficult to well copper plate the via holes thereafter. Therefore, it is preferable that the resin composition does not contain an inorganic filler such as silica.
• not containing an inorganic filler such as silica means that an inorganic filler is not intentionally added to the resin composition, and the inorganic filler may be contained within a range of 0.0001% by mass to 0.01% by mass relative to 100% by mass of the resin composition, or the inorganic filler may be 0% by mass, i.e., no inorganic filler is contained.
• the resin composition can be produced by mixing component (A) and component (B), and if necessary, component (C).
• the resin composition may be produced by mixing component (A) and component (B), and if necessary, component (C), together with an additive of component (D) and/or a fluidity imparting agent of component (E) as necessary.
• a filler such as silicon dioxide or aluminum oxide
• the coating property may be deteriorated, which is not preferable.
• the resin composition does not contain silicon dioxide or aluminum oxide powder.
• the method for producing the resin composition is not particularly limited.
• the resin composition can be produced by mixing the raw materials of each component with a mixer such as a raikai machine, a pot mill, a three-roll mill, a hybrid mixer, a rotary mixer, or a twin-shaft mixer. These components may be mixed simultaneously, or a part of them may be mixed first and the rest may be mixed later.
• the resin composition may also be produced by using an appropriate combination of the above-mentioned devices.
• the cured product obtained by curing the resin composition can be used in an FO-WLP type semiconductor device and can be used around the wiring of the semiconductor device. It can be used as an interlayer insulating film of an FO-WLP type semiconductor device, and the tensile elongation of the cured product at 25°C is 15% or more and 500% or less.
• the cured product obtained by curing the resin composition is used as an interlayer insulating film of an FO-WLP type semiconductor device, if the tensile elongation of the interlayer insulating film of the rewiring layer of the semiconductor device at 25°C is 15% or more, the respective linear expansion coefficients of the semiconductor chip and the encapsulant are different, and peeling due to expansion and contraction caused by a heat cycle in which the temperature changes from a relatively low temperature of room temperature to a relatively high temperature during operation of the semiconductor device are repeated can be suppressed, and cracks in the wiring contained in the rewiring layer can be suppressed.
• the cured product obtained by curing the resin composition preferably has a relative dielectric constant ( ⁇ ) of 4.0 or less, more preferably 3.5 or less, even more preferably 3.0 or less, even more preferably 2.8 or less, and particularly preferably 2.7 or less.
• the cured product obtained by curing the resin composition may have a dielectric loss tangent (tan ⁇ ) of 0.015 or less, 0.014 or less, 0.013 or less, 0.012 or less, and preferably 0.010 or less.
• a cured product having a low dielectric constant and low dielectric loss tangent has good electrical properties when used in a high frequency range, and can be used for electronic components, semiconductor devices, etc. used in a high frequency range.
• the resin composition when applied to a semiconductor substrate using, for example, a spin coater, it cures sufficiently, and a semiconductor device can be used in a high frequency range, such as the fifth generation communication system "5G", which is expected to have a large capacity and high speed communication.
• 5G fifth generation communication system
• the semiconductor device means a FO-WLP type semiconductor device.
• the semiconductor device includes an interlayer insulating film formed by curing the above-mentioned resin composition or the resin composition for semiconductor device.
• a plurality of semiconductor chips are arranged on a support at a predetermined interval, a molding resin serving as an encapsulant is applied onto the semiconductor chips, and the semiconductor chips are encapsulated with the molding resin.
• the semiconductor chips may be attached to the support. After the semiconductor chips are encapsulated with the molding resin, the support is peeled off, and the semiconductor chips and the encapsulant formed by hardening the molding resin are adjacent to each other and exist on approximately the same plane.
• a conductive material is formed at a predetermined position on the semiconductor chip, for example, by a vacuum deposition method or a sputtering method, and then patterned by, for example, a photolithography method, to form a plurality of terminals at a predetermined position on the semiconductor chip.
• Wiring is formed to connect the terminals formed on the semiconductor chip to external terminals, a resin composition is applied to the places where no wiring is formed, and the resin composition is thermally cured to form an interlayer insulating film.
• the interlayer insulating film and the wiring may be laminated in a plurality of layers.
• a second support is attached to the back surface opposite to the semiconductor chip and the encapsulant that are on approximately the same plane after the support is peeled off.
• a plurality of semiconductor chips may be encapsulated with a molding resin.
• the interlayer insulating film is formed, for example, by dropping a resin composition onto a semiconductor chip and an encapsulant on approximately the same plane, rotating the second support about a vertical axis using a spin coater to apply the liquid resin composition onto the semiconductor chip and encapsulant on the same plane, and hardening the liquid resin composition.
• the resin composition is dropped onto the semiconductor chip and encapsulant including the terminals, rotating the second support supporting the semiconductor chip and encapsulant about a vertical axis using a spin coater to apply the liquid resin composition onto the semiconductor chip and encapsulant, and hardening the liquid resin composition to form the interlayer insulating film.
• the rotation speed of the spin coater is preferably 1,000 rpm to 3,000 rpm, and the rotation time is preferably 5 seconds to 30 seconds. If the rotation speed and rotation time of the spin coater are within the above ranges, the resin composition can be applied to a substantially uniform thickness on the semiconductor chips and the encapsulant, an interlayer insulating film having a desired substantially uniform thickness can be formed after curing, and peeling of the semiconductor chips and the encapsulant during curing can be easily suppressed. After applying the resin composition over multiple semiconductor chips and the encapsulant and curing it to form an interlayer insulating film, the encapsulant and interlayer insulating film for each semiconductor chip can be cut with a dicing saw or the like to separate them.
• the interlayer insulating film can be formed using a resin composition containing the aforementioned components (A) and (B), and optionally containing component (C).
• the interlayer insulating film can be formed using a resin composition containing the aforementioned components (A) and (B), and optionally containing component (C), together with an additive of component (D) and/or a fluidity imparting agent of component (E).
• the interlayer insulating film may be formed by stacking a plurality of interlayer insulating films.
• the resin composition When applied to the semiconductor chip and the encapsulant using a spin coater, the resin composition preferably has a first viscosity of 300 mPa ⁇ s to 4,000 mPa ⁇ s, more preferably 400 mPa ⁇ s to 4,000 mPa ⁇ s, and even more preferably 500 mPa ⁇ s to 2,000 mPa ⁇ s, as measured by a rotational viscometer at 25°C and 10 rpm. If the first viscosity of the resin composition when applied to the semiconductor chip and the encapsulant using a spin coater is within the above range, a coating film of approximately uniform thickness with little variation in thickness can be formed, and peeling of the semiconductor chip and the encapsulant can be suppressed.
• the second viscosity of the resin composition at 25°C and 1 rpm using a rotational viscometer is preferably within the range of 200 mPa ⁇ s to 4,200 mPa ⁇ s, more preferably within the range of 210 mPa ⁇ s to 4,000 mPa ⁇ s, even more preferably within the range of 220 mPa ⁇ s to 4,000 mPa ⁇ s, and even more preferably within the range of 230 mPa ⁇ s to 3,500 mPa ⁇ s.
• the second viscosity of the resin composition when applied to the semiconductor chip and the encapsulant using a spin coater is within the above range, a coating film of approximately uniform thickness with little variation in thickness can be formed, and peeling of the semiconductor chip and the encapsulant can be further suppressed.
• the thixotropy index TI which is the ratio of the second viscosity to the first viscosity, is preferably in the range of 0.8 to 1.2, may be in the range of 0.9 to 1.1, or may be in the range of 1.0 to 1.1. If the second viscosity relative to the first viscosity of the resin composition when applied to the semiconductor chip and the encapsulant using a spin coater is within the above range, a coating film with a substantially uniform thickness with little variation in thickness can be formed, and peeling of the semiconductor chip and the encapsulant can be further suppressed.
• the thickness of each film is preferably within the range of 3 ⁇ m to 20 ⁇ m, and may be within the range of 4 ⁇ m to 18 ⁇ m, or may be within the range of 5 ⁇ m to 17 ⁇ m. As long as the thickness of each layer is within the range of 3 ⁇ m to 20 ⁇ m, the interlayer insulating film can satisfy the demand for a smaller and thinner semiconductor device, even if multiple films are stacked.
• a first interlayer insulating film (dielectric film) with openings on the surface of the electrodes can be formed by laser direct patterning, for example, using a laser direct patterning device (manufactured by Mitsubishi Electric Corporation).
• a seed layer for forming wiring is formed on the entire surface of the first interlayer insulating film formed on the semiconductor chip and the sealing material on the substantially same plane by deposition, sputtering, chemical vapor deposition (CVD), electroless plating, or the like.
• the seed layer may contain copper, copper oxide, an alloy of copper and chromium, copper, tantalum, cobalt, titanium, and alloys thereof, or may have a laminated structure in which multiple layers are laminated.
• a resist is formed on this seed layer in a predetermined pattern by, for example, photolithography, and wiring of a predetermined pattern is formed by electrolytic plating or electroless plating using this resist film as a mask.
• the resist film is peeled off, and the seed layer remaining in the non-wiring area is removed by etching or the like.
• the thickness of the wiring is not particularly limited, but the thickness of the wiring may be 0.1 ⁇ m or more, 15 ⁇ m or less, 12 ⁇ m or less, or 10 ⁇ m or less.
• the second interlayer insulating film can be a resin composition containing the above-mentioned components (A), (B), and (C) as in the first interlayer insulating film, and can be applied to the wiring using a spin coater with the same rotation speed and rotation time as in the first interlayer insulating film.
• a second interlayer insulating film can be formed by laser direct patterning using, for example, a laser direct patterning device (manufactured by Mitsubishi Electric Corporation), in which the surface portion of the wiring where the external terminals described later are to be disposed is opened.
• the second interlayer insulating film may be formed by opening the surface portion of the electrode by exposure and development.
• the process of forming the first interlayer insulating film, forming the wiring, and forming the second interlayer insulating film is combined to form a rewiring layer.
• external terminals such as solder balls can be formed in the openings of the rewiring layer by a solder ball mounting method, a solder plating method, a solder paste method, a solder paste dispensing method, a solder vapor deposition method, or the like, to form an FO-WLP type semiconductor device.
• the FO-WLP type semiconductor device thus formed has an interlayer insulating film including a first interlayer insulating film and a second interlayer insulating film, which is made using a resin composition containing the above-mentioned components (A), (B), and (C), and therefore the tensile elongation of the interlayer insulating film is large at 15% or more, peeling between the semiconductor chip and the sealing material is suppressed, and the semiconductor chip has a low dielectric constant and a low dielectric loss tangent, and the electrical characteristics are good even when the semiconductor device is used in a high frequency range such as the fifth generation communication system "5G", which is expected to have a large capacity and high-speed communication.
• a resin composition containing the above-mentioned components (A), (B), and (C) a resin composition containing the above-mentioned components (A), (B), and (C)
• the interlayer insulating film and resin composition according to the embodiment of the present invention, and the semiconductor device including the interlayer insulating film obtained by curing the resin composition can be used in electronic components of electronic devices such as mobile phones, smartphones, notebook computers, tablet terminals, and camera modules.
• the present invention will be described in detail below with reference to examples. The present invention is not limited to these examples.
• the numbers indicating the blending ratio of each component contained in the resin composition represent the ratio (mass (%)) when the total amount of the resin composition is 100 mass %, unless otherwise specified.
• the total amount of the resin composition represents the combined amount of components (A), (B), and (C).
• OPE 2st 2200 modified polyphenylene ether resin represented by formula (6) having vinyl groups at both ends (reaction product of 2,2',3,3',5,5'-hexamethylbiphenyl-4,4'-diol/2,6-dimethylphenol condensate and chloromethylstyrene), number average molecular weight (Mn) 2,200) (manufactured by Mitsubishi Gas Chemical Company, Inc.).
• NORYL SA9000 modified polyphenylene ether resin represented by formula (5) having a group represented by formula (3) at its terminal and having methacryloyl groups at both terminals, number average molecular weight (Mn) 1,850 to 1,950 (manufactured by SABIC Innovation Plastics)).
• B3 Styrene / butadiene / butylene / styrene block copolymer (SBBS), Tuftec (trademark) P1083, hard segment (styrene) / soft segment (ethylene butadiene) ratio 20 / 80 (%), number average molecular weight (Mn) 59,000 (manufactured by Asahi Kasei Corporation).
• B4 Styrene / butadiene / butylene / styrene block copolymer (SBBS), Tuftec (trademark) P1500, hard segment (styrene) / soft segment (ethylene butadiene) ratio 30 / 70 (%), number average molecular weight (Mn) 50,000 (manufactured by Asahi Kasei Corporation).
• B5 Carboxylated nitrilobutadiene rubber (XNBR) modified with carboxyl, Nipol (trademark) 1072, hard segment (carboxyl)/soft segment (nitrilobutadiene) ratio 8/92, number average molecular weight (Mn) 500,000 (manufactured by Zeon Corporation)
• B6 Styrene/ethylene/ethylene/propylene/styrene block copolymer (SEEPS) SEPTON (registered trademark) 4033, hard segment (styrene)/soft segment (ethylene-ethylene-propylene) ratio 30/70 (%), number average molecular weight (Mn) 100,000 (manufactured by Kuraray Co., Ltd.).
• B7 Styrene / ethylene / butadiene / styrene block copolymer (SEBS), Tuftec (trademark) H1221, hard segment (styrene) / soft segment (ethylene butadiene) ratio 12 / 88 (%), number average molecular weight (Mn) 170,000 (manufactured by Asahi Kasei Corporation).
• B8 Styrene/ethylene/butadiene/styrene block copolymer (SEBS), KRATON (trademark) G1652, hard segment (styrene)/soft segment (ethylene-butadiene) ratio 30/70 (%), number average molecular weight (Mn) 200,000 (manufactured by KRATON).
• MEK Methyl ethyl ketone
• E2 Styrene-butadiene block copolymer having a 1,2 vinyl structure 1,2-SBS-L42, 90% 1,2 vinyl structure, hard segment (styrene) / soft segment (butadiene) ratio 20:80, number average molecular weight (Mn) 4,300 (manufactured by Nippon Soda Co., Ltd.).
• Examples 1 to 17, Comparative Example 1 Components (A), (B), and (C), and, if necessary, an additive (organic peroxide) of component (D) were mixed and dissolved using a stirrer (SSR-112, manufactured by AGC Technoglass Co., Ltd.) at a constant temperature of 70°C in a thermostatic water bath (SB-35, manufactured by Tokyo Rikakikai Co., Ltd.) to produce the resin compositions of the examples and comparative examples.
• component (E) was not contained in each resin composition.
• component (E) was contained in each resin composition.
• Tables 1, 2, and 3 the symbol "-" indicates that the corresponding component is not contained in the resin composition.
• the numerical value without a unit in the corresponding item means "mass%".
• the H/S ratio indicates the hard segment/soft segment ratio.
• Solubility For each resin composition, the solvent for component (C) was heated to 70° C., and when component (A), component (B), and component (E) were contained, the solubility of component (E) was evaluated visually. When component (A), component (B), and component (E) were contained, the resin composition in which it was clear that component (E) was dissolved in the solvent for component (C) by visual observation was rated as G (good), and the resin composition in which it was clear that component (E) was not dissolved by visual observation was rated as N (not good).
• Viscosity (first viscosity, second viscosity, thixotropy index (TI))
• a first viscosity at 25° C. and 10 rpm and a second viscosity at 25° C. and 1 rpm were measured using a TVE type viscometer (cone rotor: 1° 34′ ⁇ R24, manufactured by Toki Sangyo Co., Ltd.), and the thixotropy index TI (viscosity at 1 rpm/viscosity at 10 rpm) of the second viscosity relative to the first viscosity was measured.
• a coating film to serve as an interlayer insulating film was formed using each of the resin compositions of the Examples and Comparative Examples, and the coating film made of the resin composition was cured by heat treatment under the conditions described below. The following evaluations were performed on the cured product.
• Thickness of Interlayer Insulating Film A silicon wafer having a diameter of 150 mm and a thickness of 0.525 mm was spin-coated with each of the resin compositions of the Examples and Comparative Examples using a spin coater (MS-A200, manufactured by Mikasa Co., Ltd.) as a semiconductor substrate used for a semiconductor chip.
• the spin coater was operated at 1,000 rpm for 5 seconds and then at 2,000 rpm for 30 seconds to spin-coat the resin composition onto the silicon wafer surface, forming a coating film.
• a silicon wafer having a diameter of 150 mm and a thickness of 0.525 mm was spin-coated with each of the resin compositions of the Examples and Comparative Examples using a spin coater (MS-A200, manufactured by Mikasa Co., Ltd.)
• the spin coater was operated at 1,000 rpm for 5 seconds and then at 3,000 rpm for 30 seconds to spin-coat the resin composition onto the silicon wafer surface, forming a coating film.
• the silicon wafer having the thin film of the resin composition was pre-heat-treated (dried) at 130° C. for 10 minutes in a nitrogen atmosphere, and heated to obtain a sample in which the coating film of the resin composition was dried.
• the film thickness of the coating film of the resin composition was measured using a stylus profiling system (Surfcom 300B, manufactured by Tokyo Seimitsu Co., Ltd.).
• the film thickness of the interlayer insulating film can be about 5 ⁇ m to 30 ⁇ m.
• the film thickness of the interlayer insulating film may be 5 ⁇ m or more, or may be 10 ⁇ m or more.
• the film thickness of the interlayer insulating film may be 30 ⁇ m or less, or may be 20 ⁇ m or less.
• Dielectric constant ( ⁇ ), dielectric tangent (tan ⁇ ) The measurement sample was prepared as follows. Each of the resin compositions of the Examples and Comparative Examples was applied to a support made of polyethylene terephthalate (PET), pre-heat-treated (dried) at 130°C for 10 minutes in a nitrogen atmosphere, heated to dry the resin composition, and then treated (cured) at 200°C for 60 minutes in a nitrogen atmosphere to obtain a coating film (cured product) made of the resin composition with a thickness of 30 ⁇ m.
• PET polyethylene terephthalate
• the dielectric constant ( ⁇ ) and dielectric loss tangent (tan ⁇ ) of the measurement sample were measured at a dielectric resonance frequency of 10 GHz by the dielectric resonance method (SPDR method).
• the dielectric constant ( ⁇ ) of the cured product of the resin composition is preferably 4.0 or less, more preferably 3.5 or less, and particularly preferably 3.0 or less.
• the lower limit of the dielectric constant ( ⁇ ) is not particularly limited, but may be, for example, 1.0 or more, or 1.5 or more.
• the dielectric loss tangent (tan ⁇ ) of the cured product of the resin composition is preferably 0.010 or less, more preferably 0.005 or less, and particularly preferably 0.003 or less.
• the lower limit of the dielectric loss tangent is not particularly limited, but may be, for example, 0.0001 or more, or 0.0005 or more.
• the relative dielectric constant ( ⁇ ) measured at a dielectric resonance frequency of 10 GHz by a dielectric resonance method (SPDR method) may be in the range of 1.0 to 4.0, or may be in the range of 1.5 to 3.0.
• the dielectric loss tangent (tan ⁇ ) may be in the range of 0.0001 to 0.01, or may be in the range of 0.0005 to 0.005.
• Tensile elongation (%) Each resin composition of the examples and comparative examples was applied to a support made of polyethylene terephthalate (PET), pre-heat-treated (dried) at 130°C for 10 minutes under a nitrogen atmosphere, heated to dry the resin composition, and cured at 200°C for 60 minutes under a nitrogen atmosphere to form a test piece (sample) for measuring the tensile elongation that can be used as an interlayer insulating film.
• the sample was a rectangular film sample having a width of 15 mm, a length of 200 mm, and a thickness of 30 ⁇ m.
• the tensile elongation of this film sample at 25°C was measured using a tabletop precision universal testing machine (Autograph AGS-J series, manufactured by Shimadzu Corporation).
• the film sample was fixed to the upper and lower tensile jigs of the tabletop precision universal testing machine so that the length between the tensile jigs was 100 mm, and the film sample was pulled upward at a speed of 200 mm/min, and the elongation was measured from the breaking distance.
• the tensile elongation was calculated from the following formula (1).
• Elongation (%) [break distance (mm) - initial length (100 mm)] / initial length (100 mm) x 100 (1)
• the produced sample was measured by a tensile method using a thermomechanical analyzer (TMA), and the average thermal expansion coefficient at 50 ° C. to 60 ° C. was read (i.e., the measured value of the linear expansion coefficient).
• the measurement conditions were a tensile load of 2 gf, annealing at 20° C./min to 230° C., then returning to room temperature, and then heating at 5° C./min to 230° C.
• the measured linear expansion coefficient (how to read the average thermal expansion coefficient) is the value in the planar direction (i.e., the XY direction).
• the reliability of a semiconductor device including an interlayer insulating film made of a cured product obtained by curing each resin composition is evaluated.
• a temporary fixing film thermal release sheet, REVALPHA (registered trademark) 3195V, manufactured by Nitto Denko Corporation
• REVALPHA registered trademark 3195V, manufactured by Nitto Denko Corporation
• the mold resin serving as the encapsulant was potted from above the semiconductor chip.
• the mold resin used was a mold resin (XLM8901-18, manufactured by Namics Corporation) containing epoxy resin and silicon dioxide.
• the linear expansion coefficient (CTE ⁇ 1) of the cured product of the mold resin at a temperature below the glass transition temperature was measured by the above-mentioned method.
• the linear expansion coefficient (CTE ⁇ 1) of the cured product of the mold resin at a temperature below the glass transition temperature was 10 ppm/°C.
• the mold resin around the semiconductor chip was molded at 120°C for 60 minutes by the compression molding method.
• the mold resin was cured in a heating furnace (manufactured by TOWA Corporation) at 150°C for 60 minutes to form a semiconductor chip and an encapsulant in which the periphery of the semiconductor chip was covered with the encapsulant except for one surface in contact with the temporary fixing film.
• the molded semiconductor chip and the sealing material were placed on a hot plate set at 200° C. and left for 10 minutes, after which the temporary fixing film and the silicon wafer were peeled off.
• the molded encapsulant and the semiconductor chip are adjacent to one surface of the semiconductor chip and the encapsulant formed by hardening the molding resin, and are present on approximately the same plane.
• Each resin composition of the Examples and Comparative Examples was dropped onto the surface where the semiconductor chip and the encapsulant were approximately on the same plane so as to be in direct contact with both the semiconductor chip and the encapsulant, and each resin composition was applied using a spin coater.
• the rotation speed of the spin coater was set to 1,000 rpm to 3,000 rpm, and the rotation time was set to 5 seconds to 30 seconds.
• the semiconductor chip and the encapsulant coated with each of the resin compositions of the Examples and Comparative Examples were heated in a heating furnace (manufactured by Isuzu Manufacturing Co., Ltd.) at 200°C for 60 minutes to harden each resin composition, thereby forming an interlayer insulating film having a thickness of 15 ⁇ m.
• the sealing material and interlayer insulating film between each semiconductor chip were cut with a dicing saw to separate each semiconductor chip, and samples for FO-WLP type semiconductor devices were formed, including interlayer insulating films formed by curing each of the resin compositions of the examples and comparative examples.
• a heat cycle test was conducted on this sample using a thermal shock tester, in which heating and cooling were repeated 500 times for 20 minutes each time in the temperature range of -55°C to +125°C. If the interlayer insulating film was not peeled off after the heat cycle test, it was rated as "G (Good)", and if the interlayer insulating film of the sample was peeled off, it was rated as "F (Fail)".
• the cured products obtained by curing the resin compositions of Examples 1 to 17 have a tensile elongation of 15% or more at 25°C.
• the interlayer insulating film of the cured products obtained by curing the resin compositions of Examples 1 to 17 did not peel off even after the heat cycle test, and was rated "G (good)."
• the cured products obtained by curing the resin compositions of Examples 1 to 17 are used as the interlayer insulating film of the rewiring layer of a FO-WLP type semiconductor device that is in direct contact with at least a part of the semiconductor chip and at least a part of the encapsulant, they can absorb the expansion and contraction of the semiconductor chip and encapsulant, which have different linear expansion coefficients due to heat cycles, and can suppress peeling and cracking of the semiconductor chip and encapsulant, and cracking of the wiring contained in the rewiring layer.
• the cured products obtained by curing the resin compositions of Examples 1 to 10 and 13 to 17 have a relative dielectric constant ( ⁇ ) of 1.5 to 3.0 and a dielectric loss tangent (tan ⁇ ) of 0.001 to 0.010 measured at a dielectric resonance frequency of 10 GHz by the dielectric resonance method (SPDR method), and have sufficiently good electrical properties as an interlayer insulating film of a rewiring layer of a semiconductor device used in high frequency ranges such as the fifth generation communication system "5G".
• SPDR method dielectric resonance method
• the cured products obtained by curing the resin compositions of Examples 11 and 12 using XNBR (carboxylated nitrilobutadiene rubber) as the elastomer of component (B) have good electrical properties as an interlayer insulating film of a rewiring layer of a semiconductor device that can be used in a frequency range lower than "5G", for example.
• XNBR carboxylated nitrilobutadiene rubber
• the resin compositions of Examples 1 to 17 have good solubility in component (A) and component (B), and when component (E) is included, component (E) has good solubility in component (C), and can form a coating film of approximately uniform thickness when applied to a semiconductor chip and an encapsulant using a spin coater.
• the resin compositions of Examples 1 to 13 had a first viscosity of 300 mPa ⁇ s to 4,000 mPa ⁇ s at 25°C and 10 rpm in a rotational viscometer, and a second viscosity of 200 mPa ⁇ s to 4,200 mPa ⁇ s at 25°C and 1 rpm in a rotational viscometer.
• the resin compositions of Examples 1 to 17 had a thixotropy index TI, which is the ratio of the second viscosity to the first viscosity, in the range of 0.5 to 3.0.
• the resin compositions of Examples 1 to 17 have little variation in thickness even when applied to both the semiconductor chip and the encapsulant using a spin coater so as to be in direct contact with each other, and can form a coating film of approximately uniform thickness.
• the samples (film samples) obtained by curing the resin compositions of Examples 14 to 17 have a linear expansion coefficient at 50 to 60°C of 200 ppm/K or less, specifically 150 ppm/K or less, and the expansion and contraction of the semiconductor chip and encapsulant due to the heat cycle is absorbed by the interlayer insulating film made of the resin composition, preventing peeling between the semiconductor chip and encapsulant and preventing cracks in the wiring contained in the rewiring layer.
• the samples (film samples) obtained by curing the resin compositions of Examples 14 to 17 have no peeling of the interlayer insulating film even after the heat cycle test, and are rated "G (good)."
• the resin composition of Comparative Example 1 has a first viscosity of less than 300 mPa ⁇ s and does not contain component (E), so the tensile elongation at 25°C of the cured product obtained by curing the resin composition is small, less than 15%.
• the cured product obtained by curing the resin composition of Comparative Example 1 cannot fully absorb the expansion and contraction caused by the heat cycle of the semiconductor chip and the encapsulant, which have different linear expansion coefficients, and may not be able to suppress peeling, making it unsuitable as an interlayer insulating film for the redistribution layer of a FO-WLP type semiconductor device.
• the resin composition of Comparative Example 1 had good solubility of components (A) and (B) in component (C), but the first viscosity at 25°C and 10 rpm was less than 300 mPa ⁇ s as measured with a rotational viscometer, and therefore the thickness of the coating varied when applied to a semiconductor chip and an encapsulant using a spin coater.
• the resin composition and semiconductor device according to the embodiment of the present disclosure, or the interlayer insulating film obtained by curing the resin composition, or the semiconductor device including the interlayer insulating film can be used in wafer level package (WLP), particularly FO-WLP type semiconductor devices.
• WLP wafer level package
• the semiconductor device according to the embodiment of the present disclosure can be used in electronic components of electronic devices such as mobile phones, smartphones, notebook computers, tablet terminals, and camera modules.
• 1 semiconductor device
• 2 semiconductor chip
• 2a terminal
• 3 sealing material (mold resin)
• 4 wiring
• 5 interlayer insulating film
• 6 rewiring layer
• 7 external terminal.

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