WO2024142528A1 - 温度制御方法、半導体装置の製造方法、および基板処理装置並びにプログラム - Google Patents

温度制御方法、半導体装置の製造方法、および基板処理装置並びにプログラム Download PDF

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Publication number
WO2024142528A1
WO2024142528A1 PCT/JP2023/036229 JP2023036229W WO2024142528A1 WO 2024142528 A1 WO2024142528 A1 WO 2024142528A1 JP 2023036229 W JP2023036229 W JP 2023036229W WO 2024142528 A1 WO2024142528 A1 WO 2024142528A1
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WO
WIPO (PCT)
Prior art keywords
temperature
reaction tube
substrate
heater wire
control method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/036229
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
堅斗 中西
等 村田
正昭 上野
英人 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP2024567223A priority Critical patent/JPWO2024142528A1/ja
Priority to EP23911312.9A priority patent/EP4645373A1/en
Priority to KR1020257018182A priority patent/KR20250128957A/ko
Priority to CN202380066899.4A priority patent/CN119895548A/zh
Priority to TW112148771A priority patent/TW202431056A/zh
Publication of WO2024142528A1 publication Critical patent/WO2024142528A1/ja
Priority to US19/090,046 priority patent/US20250226244A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Definitions

  • This disclosure relates to a temperature control method, a method for manufacturing a semiconductor device, and a substrate processing apparatus and program.
  • a temperature control method having a process temperature setting process for controlling the heating inside a reaction tube and the cooling inside the reaction tube to set the temperature of a substrate placed inside the reaction tube to a preset process temperature, the process temperature setting process having a heating process for supplying a predetermined electric power and raising the temperature of a heater wire placed outside the reaction tube to a temperature higher than the process temperature, and a cooling gas supply process for supplying a cooling gas toward the reaction tube.
  • FIG. 1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
  • 1 is a diagram illustrating a configuration of a control device in a substrate processing apparatus according to an embodiment of the present disclosure, and a relationship between the control device and a semiconductor manufacturing apparatus.
  • FIG. 2 is a diagram illustrating a hardware configuration of a control computer in the substrate processing apparatus according to an embodiment of the present disclosure.
  • FIG. 2 is a cross-sectional view showing a heating unit and a reaction tube containing a substrate.
  • FIG. 1 is a diagram showing an example of temperature control performed during substrate processing in the substrate processing apparatus 10 according to an embodiment of the present disclosure.
  • FIG. 1 is a graph showing the relationship between substrate temperature and heater output. 13 is a graph showing the relationship between heater output and time according to a modified example of the present disclosure.
  • FIG. 4 is a flowchart showing an example of a process related to temperature in a film forming process according to an embodiment of the present disclosure.
  • FIG. 9 is a diagram showing temperature changes in a furnace in the flowchart shown in FIG. 8 .
  • the heating device 12 further includes a cylindrically shaped side wall portion 32 as an insulating portion, and an upper wall portion 33 as an insulating portion formed to cover the upper end of the side wall portion 32.
  • an openable and closable valve 39a is provided near the cooling gas supply port 36. Also, an openable and closable valve 39b is provided near the quenching gas exhaust port 42 and the duct 50.
  • the first to fourth substrate temperature sensors 27-1, 27-2, 27-3, and 27-4 in the processing chamber 24 are disposed in the temperature adjustment parts 72-1, 72-2, 72-3, and 72-4, which are heat generating areas of the heating device 12, respectively, and measure the temperatures of the substrates 18 corresponding to the temperature adjustment parts 72-1, 72-2, 72-3, and 72-4, respectively.
  • the first to fourth reaction tube temperature sensors 70-1, 70-2, 70-3, and 70-4 are disposed in the cylindrical space 34 in correspondence with the temperature adjustment parts 72-1, 72-2, 72-3, and 72-4, respectively, and measure the temperature distribution inside the cylindrical space 34.
  • they since they are disposed near the reaction tube 16, they are configured to be able to measure the temperature of the reaction tube 16.
  • the flow rate sensor 64 measures the flow rate of gas supplied into the reaction tube 16 through the gas introduction nozzle.
  • the pressure regulator 66 adjusts the pressure inside the reaction tube 16.
  • the pressure sensor 68 measures the pressure inside the reaction tube 16.
  • the supply of power to the heater wire 30a is stopped, so that the temperature of the heater wire 30a returns from a temperature higher than the processing temperature to the original temperature, i.e., the temperature is lowered, before the temperature inside the reaction tube 16 reaches the processing temperature. This makes it possible to suppress overshooting, which is an excessive increase in temperature, and to stabilize the processing temperature.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2023/036229 2022-12-26 2023-10-04 温度制御方法、半導体装置の製造方法、および基板処理装置並びにプログラム Ceased WO2024142528A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2024567223A JPWO2024142528A1 (https=) 2022-12-26 2023-10-04
EP23911312.9A EP4645373A1 (en) 2022-12-26 2023-10-04 Temperature control method, semiconductor device manufacturing method, substrate treatment device, and program
KR1020257018182A KR20250128957A (ko) 2022-12-26 2023-10-04 온도 제어 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
CN202380066899.4A CN119895548A (zh) 2022-12-26 2023-10-04 温度控制方法、半导体装置的制造方法、以及基板处理装置及程序
TW112148771A TW202431056A (zh) 2022-12-26 2023-12-14 溫度控制方法、半導體裝置之製造方法、基板處理裝置及程式
US19/090,046 US20250226244A1 (en) 2022-12-26 2025-03-25 Temperature control method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-209067 2022-12-26
JP2022209067 2022-12-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/090,046 Continuation US20250226244A1 (en) 2022-12-26 2025-03-25 Temperature control method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Publications (1)

Publication Number Publication Date
WO2024142528A1 true WO2024142528A1 (ja) 2024-07-04

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PCT/JP2023/036229 Ceased WO2024142528A1 (ja) 2022-12-26 2023-10-04 温度制御方法、半導体装置の製造方法、および基板処理装置並びにプログラム

Country Status (7)

Country Link
US (1) US20250226244A1 (https=)
EP (1) EP4645373A1 (https=)
JP (1) JPWO2024142528A1 (https=)
KR (1) KR20250128957A (https=)
CN (1) CN119895548A (https=)
TW (1) TW202431056A (https=)
WO (1) WO2024142528A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026045985A1 (zh) * 2024-08-28 2026-03-05 江苏微导纳米科技股份有限公司 加热炉和半导体沉积系统
WO2026078854A1 (ja) * 2024-10-10 2026-04-16 株式会社Kokusai Electric 基板処理装置、炉、基板処理方法及び半導体装置の製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000181549A (ja) 1998-12-17 2000-06-30 Kokusai Electric Co Ltd 熱処理炉の温度制御方法
JP2006012985A (ja) * 2004-06-23 2006-01-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2014042042A (ja) * 2007-09-06 2014-03-06 Hitachi Kokusai Electric Inc 半導体製造装置及び基板処理方法
WO2014088026A1 (ja) * 2012-12-07 2014-06-12 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法および制御プログラム
JP2014209569A (ja) 2013-03-25 2014-11-06 株式会社日立国際電気 断熱構造体及び半導体装置の製造方法
WO2018100826A1 (ja) 2016-11-30 2018-06-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2019110312A (ja) * 2019-02-08 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180100826A (ko) 2017-03-02 2018-09-12 정상준 그래파이트 기반 발열체를 이용한 발열 시스템

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000181549A (ja) 1998-12-17 2000-06-30 Kokusai Electric Co Ltd 熱処理炉の温度制御方法
JP2006012985A (ja) * 2004-06-23 2006-01-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2014042042A (ja) * 2007-09-06 2014-03-06 Hitachi Kokusai Electric Inc 半導体製造装置及び基板処理方法
WO2014088026A1 (ja) * 2012-12-07 2014-06-12 株式会社日立国際電気 基板処理装置、基板処理方法、半導体装置の製造方法および制御プログラム
JP2014209569A (ja) 2013-03-25 2014-11-06 株式会社日立国際電気 断熱構造体及び半導体装置の製造方法
WO2018100826A1 (ja) 2016-11-30 2018-06-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2019110312A (ja) * 2019-02-08 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4645373A1

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026045985A1 (zh) * 2024-08-28 2026-03-05 江苏微导纳米科技股份有限公司 加热炉和半导体沉积系统
WO2026078854A1 (ja) * 2024-10-10 2026-04-16 株式会社Kokusai Electric 基板処理装置、炉、基板処理方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20250226244A1 (en) 2025-07-10
JPWO2024142528A1 (https=) 2024-07-04
KR20250128957A (ko) 2025-08-28
TW202431056A (zh) 2024-08-01
EP4645373A1 (en) 2025-11-05
CN119895548A (zh) 2025-04-25

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