WO2024127901A1 - Récipient rempli de gaz liquéfié et procédé de production de récipient rempli de gaz liquéfié - Google Patents

Récipient rempli de gaz liquéfié et procédé de production de récipient rempli de gaz liquéfié Download PDF

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WO2024127901A1
WO2024127901A1 PCT/JP2023/041224 JP2023041224W WO2024127901A1 WO 2024127901 A1 WO2024127901 A1 WO 2024127901A1 JP 2023041224 W JP2023041224 W JP 2023041224W WO 2024127901 A1 WO2024127901 A1 WO 2024127901A1
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liquefied gas
gas
container
container containing
liquid
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PCT/JP2023/041224
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English (en)
Japanese (ja)
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章史 八尾
修平 上島
誠人 品川
亜紀応 菊池
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セントラル硝子株式会社
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Publication of WO2024127901A1 publication Critical patent/WO2024127901A1/fr

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  • the present invention relates to a container containing liquefied gas and a method for manufacturing a container containing liquefied gas.
  • Patent Document 1 describes how corrosion resistance to halogen-based gases can be improved by forming a fluoride passivation film on the surface of a metal material (Claim 1 of Patent Document 1, Effects of the Invention, etc.).
  • the inventors discovered that by using a container with a fluoride passivation film formed on a metal film and then adding nickel and/or copper elements to the liquid in the container, it is possible to extremely reduce the difference in gas composition between the initial liquefied gas before the container is opened and the liquefied gas after gas release begins, thereby suppressing fluctuations in gas performance, and thus completing the present invention.
  • the following liquefied gas-filled container and method for manufacturing a liquefied gas-filled container 1.
  • a liquefied gas contained in the container, the container has a metal film on an inner surface, and a fluoride passivation film containing a metal fluoride on the metal film,
  • the contained liquefied gas is composed of a liquid phase and a gas phase,
  • the liquid phase contains nickel and/or copper.
  • Container containing liquefied gas 2.
  • a container containing liquefied gas according to 1. A container containing a liquefied gas, wherein the total content of the nickel element and the copper element in the liquid phase, as measured by ICP atomic emission spectrometry, is 10 ppb by weight or more and 1000 ppm by weight or less. 3.
  • a container containing liquefied gas according to 1. or 2. A container containing a liquefied gas, wherein the liquefied gas is HF or ClF3 .
  • a container containing liquefied gas according to any one of 1. to 3. A container containing liquefied gas, wherein the amount of a main component in the gas phase of the liquefied gas is 99.9 volume % or more. 5.
  • a container containing liquefied gas according to any one of 1. to 4. A container containing a liquefied gas, wherein the amount of F2 in the gas phase of the liquefied gas is less than 100 ppm by volume. 6.
  • a container containing liquefied gas according to any one of 1. to 5. A container containing liquefied gas, wherein the storage portion comprises one or more materials selected from the group consisting of stainless steel, carbon steel, manganese steel, nickel steel, and aluminum steel.
  • a container containing liquefied gas according to any one of 1. to 6. A container containing a liquefied gas, wherein the metal film has a plating film. 8.
  • a container containing liquefied gas according to any one of 1. to 8. A container containing a liquefied gas, wherein the thickness of the metal film is 1 ⁇ m or more and 300 ⁇ m or less.
  • a container containing liquefied gas according to any one of 1. to 9. A container containing a liquefied gas, wherein the fluoride passivation film is a room temperature fluoride passivation film.
  • a method for manufacturing a container containing liquefied gas 13.
  • the present invention provides a container filled with liquefied gas that is excellent at suppressing fluctuations in the performance of the liquefied gas, and a method for manufacturing the container filled with liquefied gas.
  • FIG. 1A is a cross-sectional view showing an example of the configuration of a liquefied gas-containing container according to the present embodiment
  • FIG. 1B is an enlarged view of a region ⁇ of FIG.
  • the liquefied gas container of this embodiment comprises a storage portion and liquefied gas stored in the storage portion.
  • the storage portion has a metal film on its inner surface and a fluoride passivation film containing a metal fluoride on the metal film, and the storage portion contains a gas and a liquid, the gas containing the gas phase of the liquefied gas, and the liquid containing the liquid phase of the liquefied gas and nickel and/or copper elements.
  • the above-mentioned “on the inner surface” and “on the metal film” may mean either direct contact with the inner surface and the metal film or an arbitrary film or layer intervening between the inner surface and the metal film.
  • the inclusion of nickel and copper elements means that the content in the liquid in the container is equal to or higher than the detection limit (1 ppb by weight or higher) when measured by ICP atomic emission spectroscopy.
  • the nickel and copper elements contained in the liquid may be contained as metals or metal ions, or may be contained in part or in whole as metal fluorides or metal fluoride ions (hereinafter, the terms “metal” and “metal fluorides” are used without distinguishing between the metallic state and the ionic state).
  • the liquefied gas container of this embodiment it is possible to suppress deterioration of the highly corrosive liquefied gas and the unintended mixing of impurities, etc., so it is possible to extremely reduce the difference in gas composition between the initial liquefied gas before the container is opened and the liquefied gas after gas release begins, thereby suppressing fluctuations in gas performance such as etching ability.
  • a container containing liquefied gas is directly installed in the gas supply section of various devices such as semiconductors, and the contents are extracted as gas, but if the gas performance fluctuates, it becomes necessary to adjust various settings of the gas supply destination accordingly.
  • the combined use of the metal film and the fluoride passivation film can further suppress the corrosion of the container caused by liquefied gas than when each is used alone, so that it is considered that the unintended mixing of impurities from the container into the liquid or gas in the container can be suppressed.
  • the fluorine mixed into the container is captured (trapped) through metals/metal fluorides such as Ni and NiF2 dissolved in the liquid in the container, so that it is considered that the further fluctuation of the gas composition of the gas can be suppressed. It is presumed that the fluorine is one of the origins of the trace amount of residual fluorine adsorbed on the film surface when the fluoride passivation film is formed. Therefore, it is considered that the fluctuation of the gas performance of the liquefied gas can be suppressed.
  • the content of nickel or copper in the liquid in the storage section is preferably 10 ppb to 1000 ppm by weight, more preferably 30 ppb to 800 ppm by weight, or more preferably 50 ppb to 500 ppm by weight.
  • the content may be, for example, 10 ppb to 1000 ppm by weight, preferably 30 ppb to 800 ppm by weight, or more preferably 50 ppb to 500 ppm by weight.
  • components with a lower vapor pressure than the contained liquefied gas such as iron, cobalt, molybdenum, and silver, may be included.
  • the content of nickel or copper can be measured by ICP atomic emission spectrometry. The measurement is performed on the liquefied gas immediately after the gas is taken out of the container (at the initial stage).
  • the liquefied gas filled in the liquefied gas container can be used for various purposes, but for example, it can be suitably used as a semiconductor gas.
  • the liquefied gas may be a halogen-containing liquefied gas, and is preferably a fluorine-containing liquefied gas.
  • fluorine-containing liquefied gases HF and ClF3 can be suitably used as etching gases corresponding to miniaturization in the semiconductor field.
  • FIG. 1(a) is a cross-sectional view showing a schematic configuration of a container 100 containing liquefied gas.
  • FIG. 1(b) is an enlarged view of region ⁇ in FIG. 1(a).
  • the liquefied gas container 100 has a storage section 10 filled with liquefied gas 30.
  • the storage section 10 contains a gas 35 and a liquid 33, the gas 35 containing the gas phase 34 of the liquefied gas 30, and the liquid 33 containing the liquid phase 32 of the liquefied gas and nickel and/or copper elements.
  • the gas 35 contains substantially only the gas phase 34, since this makes it possible to extract a high-purity liquefied gas from the gas-filled container 100.
  • the liquid 33 may contain any compound or component other than the liquid phase 32 of the liquefied gas and nickel and/or copper elements as described above, so long as it does not adversely affect the gas 35 or the gas phase 34 of the liquefied gas. It may also consist essentially of the liquid phase 32 and nickel and/or copper elements. For example, when the total liquid in the storage section 10 is taken as 100% by weight, the liquid phase 32 may be 98% by weight or more. It may be preferably 99% by weight or more, more preferably 99.5% by weight or more, and even more preferably 99.9% by weight or more.
  • the upper limit of the content of the liquid 33 may be, for example, 95 volume % or less, preferably 90 volume % or less, and more preferably 85 volume % or less.
  • the content of the gas 35 in the storage unit 10 may be, for example, 5 volume % or more, preferably 10 volume % or more, and more preferably 15 volume % or more.
  • the lower limit of the content of liquid 35 may be, for example, 50 volume % or more initially out of 100 volume % of the internal space of the storage section 10, but is not limited to this after the release of liquefied gas 30 has begun.
  • the liquefied gas 30 may be one that is highly corrosive to metals, and examples of the liquefied gas include fluorine-containing liquefied gases such as HF and ClF 3. Since it is easy to use if only one type of liquefied gas 30 is contained, the liquefied gas 30 is preferably HF or ClF 3. Even with a highly corrosive liquefied gas 30, the container 100 containing the liquefied gas can be stably stored.
  • the gas 35 in the storage section 10 consists essentially of only the gas phase 34 of the liquefied gas 30.
  • 99.9 volume % or more of the gas 35 in the storage section 10 may be the gas phase 34 of the liquefied gas 30. More preferably, it may be 99.95 volume % or more, and even more preferably, 99.99 volume % or more. This allows the use of liquefied gas 30 with a high purity maintained.
  • the gas 35 in the storage section 10 contains as little F2 as possible, and may contain, for example, less than 100 ppm by volume, preferably 30 ppm by volume or less, and more preferably 10 ppm by volume or less. This allows the use of liquefied gas 30 with high purity.
  • the types and amounts of components in the gas 35 in the container can be measured using ICP atomic emission spectrometry.
  • the subject of the measurement is the gas 35 immediately after (at the beginning) removal from the liquefied gas-containing container 100.
  • the storage section 10 is composed of a container having an internal space surrounded by walls.
  • the container 10 may be made of a corrosion-resistant metallic material or a ceramic material.
  • the container 10 may be made of one or more selected from the group consisting of stainless steel, carbon steel, manganese steel, nickel steel, and aluminum steel. Nickel-based alloys such as Monel and Hastelloy, or polished materials of the above-mentioned various steels, may also be used. Among these, stainless steel (SUS) and manganese steel are preferred from the viewpoint of low cost and excellent durability.
  • the above-mentioned stainless steel may be any known stainless steel that is used as a container, and may be, for example, an alloy steel containing 50 mass % or more of iron and an optional component (chromium, nickel, etc.) for improving corrosion resistance.
  • the container 10 may contain unavoidably mixed metal elements such as nickel and chromium.
  • the container 10 has a metal film 20 formed on the inner surface 12 , and a fluoride passivation film 22 containing a metal fluoride formed on the metal film 20 .
  • the metal film 20 and the fluoride passivation film 22 are configured to cover at least the inner surface 12 where the liquid 33 is present, but may cover the entire surface of the inner surface 12. If the metal film 20 does not cover the entire surface of the inner surface 12, it is desirable that the uncovered surface of the metal film 20 has a surface or coating that is not easily corroded by the liquefied gas 30 and does not adversely affect the gas phase 34 even if corroded.
  • the above-mentioned surface and coating may be any known surface or coating, and are not particularly limited. Examples of the coating include a gold plating film and a fluororesin film.
  • the metal film 20 may be configured to contain nickel and/or copper as the main component.
  • the metal film 20 may contain optional components, which are preferably those that are difficult to react with the liquefied gas 30, such as gold and fluororesin.
  • a component may be mixed into the liquid 33 from the metal film 20, it may be contained in the metal film 20 as long as the vapor pressure is low and does not adversely affect the gas phase 34 as described above. Examples of such components include iron, cobalt, molybdenum, and silver.
  • the metal film 20 may contain gold, fluororesin, etc., even if they are not components of the metal film 20.
  • an arbitrary coating may be provided between the metal film 20 and the inner surface 12.
  • the term “main component” means 80% by weight or more.
  • containing nickel and copper as main components means that the total content of both in the metal film is 80% by weight or more.
  • the thickness of the metal film 20 is, for example, 1 ⁇ m or more and 300 ⁇ m or less, preferably 2 ⁇ m or more and 200 ⁇ m or less, and more preferably 3 ⁇ m or more and 100 ⁇ m or less.
  • the method of forming the metal film 20 is not limited, but it may be, for example, a sputtered film or a plated film, with a plated film being preferred in that it is particularly easy to form a film that conforms to the shape of the container.
  • a plated film is preferred because it allows the inner surface of the container's storage section 10 and the outer surface of the container to be made of different materials, making it possible to obtain the desired container at low cost.
  • the plated film may be formed by a known method, such as electrolytic plating, electroless plating, or hot-dip plating.
  • the storage unit 10 includes an inlet/outlet mechanism for introducing the liquefied gas 30 into the space and/or discharging the gas 35 in the storage unit 10 to the outside.
  • the storage unit 10 includes an outlet 50 and a filling port (not shown) for the liquefied gas (e.g., having a liquid contact member for filling) as shown in Fig. 1.
  • the outlet 50 may be provided with a valve 40.
  • the outlet 50 and the filling port may be the same.
  • the valve 40, outlet 50 and filling port may be made of a corrosion-resistant metal material or a ceramic material, or may be made of the same material as the storage unit 10.
  • the surfaces of the valve 40, outlet 50 and filling port that come into contact with the liquefied gas 30 or the gas 35 in the storage unit may be formed with the metal film 20 or the fluoride passivation film 22.
  • the material of the outer surface of the liquefied gas-containing container 100 i.e., the outer surface of the wall portion that comes into contact with the outside air, is not particularly limited, and may be a corrosion-resistant metal material or a ceramic material, similar to the storage portion 10. In addition, any coating may be applied to the surface in order to improve physical and chemical strength. In addition, the outer surface may be made of the same material as the metal film 20, but stainless steel (SUS) and manganese steel are preferred from the viewpoints of low cost and excellent durability.
  • the fluoride passivation film 22 contains a metal fluoride obtained by reacting a metal component contained in the metal film 20 with a fluorine-containing gas such as F2 gas.
  • the metal fluoride may be NiF2 or CuF2 depending on the metal component contained in the metal film 20.
  • the metal film 20 may react with the liquefied gas 30, causing impurities to be mixed into the gas 35 inside the storage section 10.
  • the fluoride passivation film 22 may have a dissolution mark at least in a part thereof.
  • the dissolution mark may occur at the gas-liquid interface between the liquid phase 32 and the gas phase 34 of the liquefied gas 30.
  • the gas-liquid interface may also be the gas-liquid interface between the liquid 33 and the gas 35 in the storage unit 10. It is also possible to manage the durability of the fluoride passivation film 22 from the depth of the dissolution mark.
  • the dissolution mark may refer to a location where discoloration can be visually confirmed or where unevenness or peeling of the coating occurs due to contact between the gas-liquid interface and the metal film or fluoride passivation film of the storage unit 10.
  • the liquefied gas-filled container 100 may be stored, transported, etc., in an environment of, for example, 40° C. or less, preferably 30° C. or less, and more preferably 25° C. or less.
  • the temperature of the liquefied gas-filled container 100 during operation may be, for example, 40° C. or less, preferably 30° C. or less, and more preferably 25° C. or less.
  • the container of the present disclosure has less performance fluctuation than conventional containers at high temperatures during storage and transportation. This is effective even in the summer. From this perspective, one embodiment of the present disclosure is to store the container containing the liquefied gas of the present disclosure at 30 to 40°C.
  • one form of the liquefied gas storage method of this embodiment may include a step of introducing liquefied gas 30 into the storage section 10 of the above-mentioned liquefied gas-filled container 100, and a step of storing the liquefied gas-filled container 100 filled with the liquefied gas 30 under a predetermined temperature environment.
  • the liquefied gas 30 may be a halogen-containing liquefied gas or a fluorine-containing liquefied gas.
  • the temperature environment in the storage step is, for example, preferably 25° C. or higher and 40° C. or lower, and more preferably 30° C. or higher and 40° C. or lower.
  • One example of a method for manufacturing a container 100 filled with liquefied gas includes the steps of forming a metal film 20 on the inner surface 12 of the container 10, forming a fluoride passivation film 22 containing a metal fluoride on the metal film 20, and introducing liquefied gas 30 into the container 10 on which the fluoride passivation film 22 has been formed, to obtain a container 100 filled with liquefied gas, in which the container 10 contains a liquid 33 and a gas 35, the gas 35 contains a gas phase 34 of the liquefied gas 30, and the liquid 33 contains a liquid phase 32 of the liquefied gas 30 and nickel and/or copper elements.
  • the metal film 20 may be formed by a known method, for example, by a metal plating process such as electrolytic plating, electroless plating, or hot-dip plating, as described above.
  • the plating solution used in the metal plating process may be appropriately selected according to the processing method and the metal film 20 to be formed, and is not particularly limited.
  • the step of forming the fluoride passivation film 22 containing the metal fluoride can be achieved by reacting the metal component contained in the metal film 20 with a fluorine-containing gas as described above.
  • the fluorine-containing gas can be, for example, F2 gas.
  • the contact may be performed at, for example, 100° C. or less.
  • this room temperature fluoride passivation film can be produced by flowing a fluorine-containing gas at room temperature into the liquefied gas-containing container 100 after the metal film 20 has been formed on the inner surface, and bringing the fluorine-containing gas into contact with the metal film 20.
  • room temperature is not particularly limited as long as the temperature of the fluorine-containing gas is maintained at a temperature at which the reaction between the fluorine-containing gas and the metal film 20 does not become too rapid or too slow.
  • it may be within a range of 5 to 35°C, more preferably 10 to 35°C, and even more preferably 10 to 30°C. If the working environment is excessively high or low, the temperature may be heated or cooled to be within the above-mentioned room temperature range.
  • the liquefied gas 30 When the liquefied gas 30 is introduced, the liquefied gas 30 is introduced into the storage section 10 in a liquid state. It is also preferable to replace the inside of the liquefied gas-containing container 100 with an inert gas before the introduction of the liquefied gas 30, since this allows gases other than the liquefied gas, including the excess fluorine-containing gas, to be efficiently removed.
  • a liquid 33 and a gas 35 containing the liquefied gas 30 are formed in the container 10, and nickel and/or copper elements are further supplied to the liquid 33.
  • the excess metal element derived from the metal film 20 attached to the fluoride passivation film 22 is taken into the liquid 33, or that a part of the fluoride passivation film 22 is dissolved into the liquid 33 by introducing the liquefied gas 30.
  • the metal film 20 and the fluoride passivation film 22 of the preferred embodiment of the present invention are difficult to dissolve in the liquid phase 32, and the corrosion cycle of the inner wall of the container can be made difficult to progress.
  • a small amount of dissolution can occur, it can be presumed that a small amount of dissolution occurs simultaneously with the introduction of the liquefied gas 30, and nickel and/or copper elements are supplied to the liquid 33.
  • another method for supplying the nickel element and/or copper element contained in the liquid 33 may be to first place a supply source of nickel element or copper element in the liquid contact member or storage section 10 for filling the liquefied gas 30, and then introduce the liquefied gas 30 to supply the nickel element or copper element from the supply source into the liquid 33.
  • the nickel plating film was contacted with F2 gas (purity 99.9% by volume, fluorine-containing gas) at room temperature to form a passivation film containing NiF2 (fluoride passivation film 22 containing metal fluoride) on the nickel plating film (fluorine gas treatment).
  • F2 gas purity 99.9% by volume, fluorine-containing gas
  • the F2 gas was removed from the inside of the container and replaced with He gas (inert gas) (replacement process).
  • gaseous HF liquefied gas
  • liquid HF liquefied gas filling process
  • Example 2 A container containing liquefied gas was produced in the same manner as in Example 1, except that the Ni concentration in the plating solution used for nickel plating was made higher than that in Example 1.
  • Example 3 A container containing liquefied gas was produced in the same manner as in Example 1, except that the material of the container was changed from stainless steel to manganese steel.
  • Example 4 A container containing liquefied gas was produced in the same manner as in Example 1, except that the metal plating was changed from nickel plating to copper plating.
  • Example 5 A container containing liquefied gas was produced in the same manner as in Example 4, except that the Cu concentration in the plating solution used for copper plating was made higher than that in Example 4.
  • Example 6 A container containing a liquefied gas was produced in the same manner as in Example 1, except that the type of liquefied gas was changed from HF to ClF3 .
  • Example 7 A container containing a liquefied gas was prepared in the same manner as in Example 2, except that the type of liquefied gas was changed from HF to ClF3 .
  • Example 8 A container containing liquefied gas was prepared in the same manner as in Example 4, except that the type of liquefied gas was changed from HF to ClF3 .
  • Example 9 A container containing liquefied gas was prepared in the same manner as in Example 5, except that the type of liquefied gas was changed from HF to ClF3 .
  • Example 1 A container containing liquefied gas was produced in the same manner as in Example 1, except that the fluorine gas treatment was carried out without carrying out the plating treatment.
  • Comparative Example 2 A container containing liquefied gas was produced in the same manner as in Example 6, except that the fluorine gas treatment was carried out without carrying out the plating treatment.
  • Metal concentration in liquid The metal concentrations (wt. ppm) of nickel and copper contained in the liquid in the container were measured by ICP emission spectrometry. Table 1 shows the metal concentrations when the amount of liquid remaining in the container is 80% of the initial amount by volume, and when the amount of liquid remaining in the container is 20%, after the container is filled with liquefied gas and the valve of the container is opened to gradually release the gas containing the liquefied gas from the outlet.
  • metal type in “metal concentration in liquid” indicates either nickel or copper, and in cases where only one type is listed, such as in Examples 1 to 9, the unlisted element was less than 1 ppb (below the detection limit).
  • Comparative Examples 1 and 2 the concentrations of both nickel and copper elements were less than 1 ppb (below the detection limit) initially, when 80% remained, and when 20% remained, and neither nickel nor copper elements were confirmed in the liquid.
  • the F2 concentration (wt. Vol) contained in the gas in the container was measured by ICP emission spectrometry.
  • the F2 concentration was measured on the gas immediately after it was discharged from the outlet, and the values are shown in Table 1 when the amount of liquid remaining in the container was 80% by volume compared to the initial amount, and when the amount of liquid remaining in the container was 20%, at the initial time immediately after the liquefied gas was filled into the container, the valve of the container was opened and the gas containing the liquefied gas was gradually discharged from the outlet.
  • Example 1 the initial HF or ClF3 concentration was measured using ICP atomic emission spectrometry on the gas immediately after it was discharged from the outlet. In all Examples, it was confirmed that the initial HF or ClF3 concentration in the gas was 99.9% by volume or more.
  • the reaction chamber is equipped with a stage for supporting a sample.
  • the sample used was a 6-inch silicon substrate with a silicon oxide film (20 nm) formed thereon and a polysilicon film (30 ⁇ m) formed thereon.
  • the stage is equipped with a stage temperature regulator capable of adjusting the stage temperature.
  • the reaction chamber is connected to a first gas pipe for introducing gas and a second gas pipe for exhausting gas.
  • the etching gas supply system is connected to the first gas pipe via a first valve and supplies the above-mentioned substrate processing gas to the reaction chamber.
  • the vacuum pump is connected to the second gas pipe via a second valve for exhausting gas.
  • the pressure inside the reaction chamber is controlled by a second valve based on the indicated value of a pressure gauge attached to the reaction chamber.
  • a sample is placed on the stage, and the reaction chamber, the first gas pipe, and the second gas pipe are evacuated to 1.5 kPa, after which the stage temperature is set to a specified value (25°C). After confirming that the stage temperature has reached the specified value, the first and second valves are opened, the pressure of the etching gas supply system is set to the specified pressure (100 Pa), and liquefied gas stored in a liquefied gas container is introduced into the reaction chamber through the first gas pipe as a substrate processing gas. The total flow rate of the substrate processing gas at this time was set to 100 sccm.
  • etching time 1 minute
  • the thickness of the polysilicon film before etching and the thickness of the polysilicon film after etching were measured at five locations each, and the amount of etching at each measurement location (difference in film thickness before and after etching) was calculated.
  • the etching rate (nm/min) was calculated from the average amount of etching at each measurement location and the etching time.
  • the initial value immediately after filling the container with liquefied gas is taken as 1.0.
  • the valve of the container is opened and the gas is gradually released from the outlet.
  • Table 1 shows the relative values when the remaining amount of liquid in the container is 80% of the initial volume, and when the remaining amount of liquid in the container is 20%.

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Abstract

Un récipient rempli de gaz liquéfié (100) selon la présente invention qui est équipé d'une section de stockage (10) et d'un gaz liquéfié (30) stocké dans la section de stockage (10), la section de stockage (10) ayant un film métallique (20) sur une surface interne (12) et un film passif fluoré (22) contenant un fluorure métallique sur le film métallique (20) ; un gaz (35) et un liquide (33) étant présents à l'intérieur de la section de stockage (10) ; le gaz (35) contenant une phase gazeuse (34) du gaz liquéfié (30) ; et le liquide (33) contenant une phase liquide (32) du gaz liquéfié (30) et du nickel élémentaire et/ou du cuivre élémentaire.
PCT/JP2023/041224 2022-12-15 2023-11-16 Récipient rempli de gaz liquéfié et procédé de production de récipient rempli de gaz liquéfié WO2024127901A1 (fr)

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JP2022-199993 2022-12-15
JP2022199993 2022-12-15

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WO2024127901A1 true WO2024127901A1 (fr) 2024-06-20

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PCT/JP2023/041224 WO2024127901A1 (fr) 2022-12-15 2023-11-16 Récipient rempli de gaz liquéfié et procédé de production de récipient rempli de gaz liquéfié

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