WO2024095585A1 - 電流センサ - Google Patents

電流センサ Download PDF

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Publication number
WO2024095585A1
WO2024095585A1 PCT/JP2023/031292 JP2023031292W WO2024095585A1 WO 2024095585 A1 WO2024095585 A1 WO 2024095585A1 JP 2023031292 W JP2023031292 W JP 2023031292W WO 2024095585 A1 WO2024095585 A1 WO 2024095585A1
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WO
WIPO (PCT)
Prior art keywords
magnetic shield
magnetic
bus bar
current
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/031292
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English (en)
French (fr)
Japanese (ja)
Inventor
学 田村
優 熊谷
千亜紀 植田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Alpine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Alpine Co Ltd filed Critical Alps Alpine Co Ltd
Priority to EP23883888.2A priority Critical patent/EP4614163A1/en
Priority to JP2024554280A priority patent/JPWO2024095585A1/ja
Publication of WO2024095585A1 publication Critical patent/WO2024095585A1/ja
Priority to US19/095,296 priority patent/US20250224429A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/18—Screening arrangements against electric or magnetic fields, e.g. against earth's field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Definitions

  • the present invention relates to a current sensor that detects a magnetic field generated by a current to be measured flowing through a bus bar and measures the current value of the current to be measured from the detected magnetic field.
  • current sensors have been used to control and monitor various devices by attaching them to the devices to measure the current flowing through them.
  • Well-known current sensors of this type use magnetoelectric conversion elements, such as magnetoresistance elements and Hall elements, which detect the magnetic field generated by the current flowing through the current path.
  • Magnetoelectric conversion elements such as magnetoresistance elements and Hall elements, which detect the magnetic field generated by the current flowing through the current path.
  • Magnetic shielding materials are used to reduce the effects of external magnetic fields in order to improve the measurement accuracy of these current sensors.
  • Patent document 1 describes a current sensor that is equipped with a current path and a magnetoelectric conversion element that detects a magnetic field generated when a current to be measured flows through the current path, with the aim of achieving miniaturization while maintaining a high magnetic shielding effect.
  • the current sensor has an inner magnetic shielding member that surrounds at least a portion of the current path and the magnetoelectric conversion element, and an outer magnetic shielding member that surrounds at least a portion of the inner magnetic shielding member.
  • Patent document 2 describes a current detection device that aims to accurately detect current while being compact, and that includes a current path, a magnetic shielding section surrounding the current path, a sensor section composed of three magnetic detection elements that detect the current flowing in the current path, and a housing integrally formed with an accommodation chamber for accommodating the sensor section.
  • the current sensors (current detection devices) of Patent Documents 1 and 2 each include a magnetic shield member that surrounds a current path, and therefore eddy currents are generated in the magnetic shield member due to changes in the magnetic field caused when a current to be measured flows through the current path, which causes a problem of degradation of the frequency characteristics of the current sensor.
  • An object of the present invention is to provide a current sensor in which degradation of frequency characteristics caused by eddy currents in a magnetic shield that occur when a current to be measured flows is reduced.
  • a first direction is a direction in which the bus bar extends
  • a second direction and a third direction are two directions that are orthogonal to each other and are orthogonal to each other
  • the magnetic detection unit is disposed facing one side of the second direction orthogonal to a plate surface of the bus bar
  • the magnetic shield has a U-shape when viewed along the first direction, the U-shape having a bottom portion disposed facing the other side of the bus bar in the second direction and extended in the third direction, and side wall portions extended from both ends of the bottom portion in the third direction toward one side in the second direction
  • the bus bar is disposed between a pair of the side wall portions
  • the magnetic shield By configuring the magnetic shield so that the first dimension of the bottom is larger than the second dimension of the side wall, the eddy current loss that occurs when the current to be measured flows through the bus bar is suppressed, thereby reducing deterioration of the frequency characteristics of the current sensor.
  • the first dimension is greater than the second dimension and is not greater than 2.0 times the second dimension.
  • the magnetic shield may be configured such that reference plates, which are flat plates each having a U-shaped outer shape, are stacked in the first direction so that the outer shapes overlap. With this configuration, by forming the reference plate into an outer shape corresponding to the shape of the magnetic shield and stacking them, a magnetic shield in which the first dimension of the bottom portion is greater than the second dimension of the side wall portion can be easily formed.
  • An insulating layer may be provided between adjacent reference plates. By providing an insulating layer between adjacent reference plates, the electrical resistance of the path of the eddy current generated in the magnetic shield is increased, thereby making it possible to suppress eddy current loss.
  • the magnetic shield may comprise a first magnetic shield plate bent into a U-shape and a second magnetic shield plate formed into a flat plate shape, and the first magnetic shield plate and the second magnetic shield plate may be stacked at the bottom.
  • the present invention can reduce the degradation of the frequency characteristics of the current sensor caused by eddy currents in the magnetic shield due to changes in the magnetic field that occur when the current to be measured flows. This makes it possible to provide a current sensor with good measurement accuracy.
  • FIG. 1 is a perspective view of a current sensor according to a first embodiment
  • 2 is a cross-sectional view of the current sensor taken along line AA in FIG. 1
  • FIG. 2B is a cross-sectional view of a magnetic shield in the current sensor of FIG. 2A
  • FIG. 2C is a perspective view of a variation of the magnetic shield and reference plate of FIG. 2B.
  • FIG. 2C is a cross-sectional view of another variation of the magnetic shield of FIG. 2B.
  • FIG. 11 is a perspective view of a current sensor according to a second embodiment.
  • 6 is a cross-sectional view of the current sensor taken along line AA in FIG. 5 .
  • 1 is a graph showing frequency and phase characteristics of an example and a comparative example.
  • FIG. 1 is a graph showing frequency and gain characteristics of an example and a comparative example.
  • 11 is a graph showing the phase characteristics and gain characteristics of the magnetic shields according to the embodiment and the comparative example, and the ratio (T1/T2) of the dimensions of the magnetic shields.
  • FIG. 2 is a perspective view for explaining the generation of eddy currents in a magnetic shield.
  • FIG. 1 is a cross-sectional view of a conventional current sensor.
  • FIG. 13 is a perspective view showing a simulation result of eddy currents generated in a magnetic shield of a conventional current sensor.
  • Reference coordinates are shown in each drawing as appropriate to show the positional relationship of each component.
  • the reference coordinates are defined as the extension direction of the bus bar in the X-axis direction (first direction), the perpendicular direction of the bus bar plate surface in the Y-axis direction (second direction), and the direction perpendicular to the extension direction of the bus bar on the bus bar plate surface in the Z-axis direction (third direction).
  • the Y-axis direction and the Z-axis direction are perpendicular to the X-axis direction and are also perpendicular to each other.
  • FIG. 1 is a perspective view of a current sensor 1 according to the present embodiment.
  • 2A is a cross-sectional view taken along line AA in FIG. 1
  • FIG. 2B is a cross-sectional view showing only magnetic shield 13 extracted from current sensor 1 in FIG. 2A.
  • the current sensor 1 includes a bus bar 11 , a magnetic detection unit 12 , and a magnetic shield 13 .
  • the bus bar 11 is a conductive material formed into a plate shape, with two opposing plate surfaces arranged to correspond to the top and bottom of the case 14 (both sides in the Y-axis direction).
  • the bus bar 11 is made of copper, brass, aluminum, etc., and a measuring current to be detected flows through it.
  • the bus bar 11 is held in the case 14, and a part of the bus bar 11 is formed integrally with the case 14 by insert molding.
  • the ends of the busbar 11 in the X-axis direction which are the connection parts with the outside, do not necessarily have to be linearly symmetrical with respect to the X-axis.
  • the part of the busbar 11 that faces the magnetic detection unit 12 may be set to have a smaller dimension in the Z-axis direction than the other parts.
  • the busbar 11 does not have to have a flat shape in the parts other than the part that faces the magnetic detection unit 12, and may be bent, for example.
  • the magnetic detection unit 12 can detect a magnetic field generated when a current to be measured flows through the bus bar 11, and a magnetoresistance effect element, a Hall element, or the like can be used as the detection element. In this embodiment, a case where a magnetoresistance effect element is used as the detection element is shown.
  • the magnetic detection unit 12 is spaced apart from the bus bar 11 in the Y-axis direction and is disposed facing the plate surface on the Y1 side of the bus bar 11 in the Y-axis direction.
  • the Y2 side surface of the magnetic detection unit 12 is a detection surface capable of detecting magnetism, and can detect magnetic components along the sensitivity axis direction parallel to the detection surface.
  • the magnetic detection unit 12 is provided on the Y2 side surface of the substrate 15 arranged on the Y1 side of the magnetic detection unit 12, so that the sensitivity axis direction is perpendicular to the direction of the current to be measured flowing through the bus bar (the sensitivity axis direction is the Z-axis direction).
  • the substrate 15 For example, epoxy glass, ceramic, or the like is used for the substrate 15.
  • the magnetic detection unit 12 is arranged so that the center of its width in the Z-axis direction overlaps with the center of its width in the Z-axis direction of the bus bar 11 when viewed along the X-axis direction.
  • the magnetic detection unit 12 only needs to be located in a position where it can measure the magnetic field generated when the current to be measured flows through the bus bar 11.
  • the magnetic detection unit 12 may be arranged in a position shifted from the position where it is entirely overlapped with the bus bar 11. For example, even if the magnetic detection unit 12 is arranged in a position shifted toward the Z2 side from the position shown in FIG.
  • the magnetic detection unit 12 is not positioned between the side wall portions 132 of the magnetic shield 13, but the magnetic detection unit 12 may be disposed between the side wall portions 132. That is, the magnetic detection unit 12 and the side wall portions 132 may be disposed at a position where they overlap when viewed along the Z-axis direction. By disposing the magnetic detection unit 12 between the side wall portions 132, the magnetic shield 13 can effectively suppress disturbance magnetic fields with respect to the magnetic detection unit 12.
  • the magnetic shield 13 has a U-shape when viewed along the X-axis direction, and includes a bottom portion 131 and two sidewall portions 132 extending from both ends of the bottom portion 131 toward the Y1 side.
  • the bottom portion 131 is made of a flat plate having a plate surface parallel to the XZ plane, extends in the Z-axis direction, and is disposed facing the Y2 side in the Y-axis direction with respect to the bus bar 11.
  • the sidewall portion 132 is made of a flat plate having a plate surface parallel to the XY plane, and extends from both ends of the bottom portion 131 in the Z axis direction toward the Y1 side in the Y axis direction.
  • the magnetic shield 13 is, for example, a stack of multiple metal plates of the same shape.
  • the magnetic shield 13 blocks disturbance magnetic field noise and reduces the disturbance magnetic field noise applied to the magnetic detection unit 12, improving the disturbance magnetic field noise resistance of the magnetic detection unit 12.
  • the current sensor 1 is used, for example, in a Battery Management System (BMS) that monitors the remaining charge level of a battery to measure the current flowing in and out of the battery. In this case, high accuracy is important. Therefore, the current sensor 1 is provided with a U-shaped magnetic shield 13 that is highly effective in protecting the magnetic detection unit 12 from external magnetic field disturbances.
  • BMS Battery Management System
  • the components are arranged in the order of bottom 131 of magnetic shield 13, bus bar 11, and magnetic detection unit 12, from the Y2 side to the Y1 side in the Y-axis direction.
  • the bus bar 11 is provided between two side wall portions 132 of magnetic shield 13 in the Z-axis direction. For this reason, an eddy current is generated in magnetic shield 13 by an induced magnetic field generated by the current to be measured flowing through bus bar 11.
  • FIG. 9 is a perspective view that illustrates the eddy currents that occur in the magnetic shield 13 when a current to be measured flows through the bus bar 11 (see FIG. 2A).
  • FIG. 9 shows a part of the bottom 131 of the magnetic shield 13
  • the eddy currents that occur in the magnetic shield 13 due to changes in the magnetic field will be explained.
  • a magnetic field C is generated at point A of the magnetic shield 13 in a direction that reduces the magnetic field B that increases due to the movement of the magnet N. Due to the generation of this magnetic field C, a current Y is generated at point A in the direction indicated by the arrow.
  • FIG. 10 is a cross-sectional view of a conventional current sensor 100, showing a cross section corresponding to the portion indicated by line AA of current sensor 1 in FIG. 1.
  • U-shaped magnetic shield 103 is manufactured by bending a single plate-like body, so that a first dimension T1 in the Y-axis direction of bottom portion 1031 is equal to a second dimension T2 in the Z-axis direction of side wall portion 1032.
  • a simulation was performed of the magnetic flux density generated in magnetic shield 103 when a current to be measured is passed through bus bar 11.
  • FIG. 11 is a perspective view showing the simulation results. From the simulation results shown in the figure, it was found that in the U-shaped magnetic shield 103, the magnetic flux density generated when a current to be measured is passed through the bus bar 11 is higher at the bottom 1031 than at the side wall 1032.
  • the eddy current loss in the magnetic shield 103 is expressed by the following formula (1), and the square of the maximum magnetic flux density affects the eddy current loss.
  • P e eddy current loss (W)
  • K e proportionality constant
  • f frequency
  • B M maximum magnetic flux density
  • T thickness of the magnetic shield
  • V volume of the magnetic shield (m 3 ).
  • the current sensor 1 has a first dimension T1 of the bottom 131 where the magnetic flux density is high that is greater than the second dimension T2 of the side wall 132, as shown in Figures 2A and 2B.
  • Increasing the second dimension T2 of the side wall 132 increases the magnetic collection effect on the magnetic field generated when the current to be measured flows through the bus bar 11, so the magnetic shield 13 has only the first dimension T1 of the bottom 131 where the magnetic flux density is high increased.
  • the magnetic shield 13 U-shaped such that the first dimension T1 of the bottom 131 in the Y-axis direction is greater than the second dimension T2 of the side wall 132 in the Z-axis direction, it is possible to reduce deterioration of the frequency characteristics of the current sensor 1.
  • the first dimension T1 is larger than the second dimension T2 and is preferably not more than 2.0 times the second dimension T2, more preferably not less than 1.1 times and not more than 1.6 times the second dimension T2, and even more preferably not less than 1.2 times and not more than 1.4 times the second dimension T2.
  • the U-shape of the magnetic shield 13 may be such that, for example, the longitudinal dimension L1 of the outer shape in the Z-axis direction is 1 to 4 times, and preferably 1.5 to 3 times, the lateral dimension L2 of the outer shape in the Y-axis direction.
  • ⁇ Modification> 3 is a perspective view of a magnetic shield 16 as a modified example of the magnetic shield 13 shown in FIG. 2B, and a reference plate 163 constituting the magnetic shield 16.
  • the reference plate 163 is a flat plate having a U-shaped outer shape when viewed along the X-axis direction.
  • the magnetic shield 16 is configured by stacking the reference plates 163 in the X-axis direction so that the outer shapes of the reference plates 163 overlap.
  • a U-shaped magnetic shield with different thicknesses cannot be formed simply by bending a plate of uniform thickness. For this reason, for example, after bending the plate, processing is required to make the side walls thinner and the bottom thicker. There is also a risk of springback, where the bent parts of the plate return to their original shape. For this reason, it is difficult to form a U-shaped magnetic shield with different thicknesses at the bottom and side walls from a plate of uniform thickness.
  • the magnetic shield 16 shown in FIG. 3 is formed by stacking reference plates 163.
  • the reference plates 163 constituting the magnetic shield 16 can be easily formed into a predetermined outer shape, for example, by punching a metal plate into a U-shape by pressing. In other words, it is easy to form the first dimension T1 of the bottom 161 and the second dimension T2 of the side wall 162 to be different dimensions. Furthermore, unlike when the reference plate 163 is formed by bending a single plate by sheet metal processing, press processing, etc., springback does not occur and the shape is stable. Therefore, by stacking reference plates 163 of a predetermined outer shape, a magnetic shield 16 with a predetermined first dimension T1 of the bottom 161 and a predetermined second dimension T2 of the side wall 162 can be easily formed.
  • an insulating layer 164 may be provided between the reference plates 163 that constitute the magnetic shield 16. Because the insulating layer 164 is provided between the reference plates 163, eddy currents can be further suppressed. In other words, the insulating layer 164 that provides insulation between adjacent reference plates 163 increases the electrical resistance of the path of the eddy currents generated in the magnetic shield 16, so that eddy currents generated when the current to be measured flows through the bus bar 11 can be suppressed.
  • the insulating layer 164 may be provided so as to insulate adjacent reference plates 163.
  • adjacent reference plates 163 can be insulated by stacking reference plates 163 in which the insulating layer 164 is formed only on the surface on the X1 side in the X-axis direction.
  • reference plates 163 in which the insulating layer 164 is formed on both the X1 side and the X2 side in the X-axis direction and reference plates 163 in which the insulating layer 164 is not formed may be stacked alternately.
  • FIG. 4 is a cross-sectional view of a magnetic shield 17 that is another variation of the magnetic shield 13 of FIG. 2B.
  • the magnetic shield 17 includes a first magnetic shield plate 18 bent into a U-shape, and a second magnetic shield plate 19 formed into a flat plate shape.
  • the first magnetic shield plate 18 has a base 181 and opposing portions 182 extending from both ends of the base 181 in a direction intersecting the surface of the base 181.
  • the two opposing portions 182 face each other in the Z-axis direction.
  • the second magnetic shield plate 19 is layered on the base 181 of the first magnetic shield plate 18. In this way, the magnetic shield 17 has the first magnetic shield plate 18 and the second magnetic shield plate 19 layered on the bottom 171 thereof.
  • first magnetic shield plate 18 formed by bending a plate of uniform thickness into a U-shape, and a second magnetic shield plate 19 formed into a flat plate shape, it is easy to form a magnetic shield 17 having different dimensions for the bottom 171 and the side wall 172.
  • the ratio between the first dimension T1 of the bottom 171 and the second dimension T2 of the side wall 172 can be adjusted by adjusting the thickness of the second magnetic shield plate 19 laminated to the base 181 of the first magnetic shield plate 18.
  • the second magnetic shield plate 19 is provided on the inner surface (Y1 side in the Y-axis direction) of the base 181 of the first magnetic shield plate 18.
  • the second magnetic shield plate 19 may be provided on the outer surface (Y2 side in the Y-axis direction) of the base 181 of the first magnetic shield plate 18.
  • the second magnetic shield plate 19 may be laminated on at least a part of the base 181 of the first magnetic shield plate 18, but may be laminated on the entirety.
  • Each of the first magnetic shield plate 18 and the second magnetic shield plate 19 may have a single-layer structure or a laminated structure.
  • FIG. 5 is a perspective view of a current sensor 2 which is a modified example of the current sensor 1.
  • FIG. 6 is a cross-sectional view taken along line AA in FIG.
  • the current sensor 2 of this embodiment differs from the current sensor 1 in that it is a multi-phase type having multiple measurement phases 21 each having a bus bar 11, a magnetic detection unit 12, and a magnetic shield 13.
  • the U-shaped magnetic shield 13 allows the distance P between the bus bars 11 of the measurement phase 21 to be narrower than with a flat-type magnetic shield, and is therefore advantageous for miniaturizing the multi-phase current sensor 2.
  • the U-shaped magnetic shield 13 has the problem that the frequency characteristics of the current sensor 2 are easily degraded due to eddy currents that are generated when the current to be measured flows through the bus bars 11.
  • the first dimension T1 of the bottom 131 of the U-shaped magnetic shield 13 is made larger than the second dimension T2 of the side wall 132 (see FIG. 2B). This makes it possible to suppress eddy currents that occur in the magnetic shield 13 when a current to be measured flows through the busbar 11, thereby reducing deterioration of the frequency characteristics of the current sensor 2. This reduces deterioration of the frequency characteristics and makes it possible to miniaturize the multi-phase type current sensor 2.
  • Example 1 2A which is provided with a magnetic shield 13 in which a first dimension T1 of a bottom portion 131 is larger than a second dimension T2 of a side wall portion 132, a relationship between the frequency of a current to be measured flowing through the bus bar 11 and the phase characteristic and the gain characteristic was simulated.
  • T1 2.6 mm
  • T2 2.0 mm
  • L1 13 mm
  • L2 7 mm
  • 10 which is provided with a magnetic shield 103 in which the first dimension T1 of the bottom portion 1031 is equal to the second dimension T2 of the side wall portion 1032, was subjected to a simulation under the same conditions as those of the example.
  • FIG. 7A and 7B are graphs showing simulation results of the phase and gain characteristics for the example and the comparative example.
  • the current sensor 1 of the example exhibits less deterioration of the phase and gain characteristics with increasing frequency than the current sensor 100 of the comparative example. From these results, it was found that by using a magnetic shield 13 in which the first dimension T1 of the bottom 131 is larger than the second dimension T2 of the side wall 132, the degradation of the frequency characteristics of the current sensor due to the influence of eddy current loss can be suppressed.
  • Example 2 For the current sensor 1 of Example 1, the frequency of the current to be measured was set to 1200 Hz, and the ratio T1/T2 of T1 to T2 of the magnetic shield was set to 1.0 (Comparative Example 1), 1.3, and 1.5, and simulations of the phase characteristics and gain characteristics were performed in the same manner as in Example 1. 8 is a graph showing the results of a simulation of the phase and gain characteristics of the present embodiment. As shown in the figure, by making T1/T2 greater than 1.0, the phase and gain characteristics of the current sensor 1 are improved.
  • T1/T2 is preferably 1.2 or more and 1.4 or less.
  • the present invention is useful as a current sensor equipped with a bus bar that is used to measure the current flowing in and out of a battery in a BMS that monitors the remaining charge level of a battery, etc.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
PCT/JP2023/031292 2022-11-02 2023-08-29 電流センサ Ceased WO2024095585A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP23883888.2A EP4614163A1 (en) 2022-11-02 2023-08-29 Current sensor
JP2024554280A JPWO2024095585A1 (https=) 2022-11-02 2023-08-29
US19/095,296 US20250224429A1 (en) 2022-11-02 2025-03-31 Current Sensor

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JP2022176153 2022-11-02
JP2022-176153 2022-11-02

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US19/095,296 Continuation US20250224429A1 (en) 2022-11-02 2025-03-31 Current Sensor

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WO2024095585A1 true WO2024095585A1 (ja) 2024-05-10

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003181968A (ja) * 2001-12-21 2003-07-03 Toshiba Electronic Engineering Corp 薄板積層コアおよびその製造方法
JP2013148512A (ja) * 2012-01-20 2013-08-01 Aisin Seiki Co Ltd 電流センサ
JP2014098633A (ja) 2012-11-14 2014-05-29 Alps Green Devices Co Ltd 電流センサ
JP2014202480A (ja) * 2013-04-01 2014-10-27 株式会社デンソー 電流センサ用の磁気シールド体
JP2016006399A (ja) 2014-06-20 2016-01-14 矢崎総業株式会社 電流検出装置
JP2016164523A (ja) * 2015-03-06 2016-09-08 株式会社タムラ製作所 電流センサ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013145165A (ja) * 2012-01-13 2013-07-25 Denso Corp 電流センサ機構
JP2021047147A (ja) * 2019-09-20 2021-03-25 株式会社デンソー 電流センサ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003181968A (ja) * 2001-12-21 2003-07-03 Toshiba Electronic Engineering Corp 薄板積層コアおよびその製造方法
JP2013148512A (ja) * 2012-01-20 2013-08-01 Aisin Seiki Co Ltd 電流センサ
JP2014098633A (ja) 2012-11-14 2014-05-29 Alps Green Devices Co Ltd 電流センサ
JP2014202480A (ja) * 2013-04-01 2014-10-27 株式会社デンソー 電流センサ用の磁気シールド体
JP2016006399A (ja) 2014-06-20 2016-01-14 矢崎総業株式会社 電流検出装置
JP2016164523A (ja) * 2015-03-06 2016-09-08 株式会社タムラ製作所 電流センサ装置

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EP4614163A1 (en) 2025-09-10
US20250224429A1 (en) 2025-07-10

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