WO2024090473A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2024090473A1
WO2024090473A1 PCT/JP2023/038501 JP2023038501W WO2024090473A1 WO 2024090473 A1 WO2024090473 A1 WO 2024090473A1 JP 2023038501 W JP2023038501 W JP 2023038501W WO 2024090473 A1 WO2024090473 A1 WO 2024090473A1
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WO
WIPO (PCT)
Prior art keywords
substrate
superheated steam
unit
hydrogen peroxide
control unit
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PCT/JP2023/038501
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English (en)
Japanese (ja)
Inventor
真吾 浦田
淳一 新庄
喬 太田
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2024090473A1 publication Critical patent/WO2024090473A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • Single-wafer substrate processing apparatuses are known that process substrates one by one using SPM (a mixture of sulfuric acid and hydrogen peroxide) (see, for example, Patent Document 1).
  • SPM a mixture of sulfuric acid and hydrogen peroxide
  • Such substrate processing apparatuses rotate the substrate while holding it horizontally, and eject SPM toward the top surface of the substrate as it rotates.
  • the efficiency of resist removal using SPM depends on the temperature of the substrate. Specifically, the lower the substrate temperature, the less efficient the resist removal.
  • the substrate temperature is approximately equal to room temperature, and the supply of SPM causes the substrate temperature to rise.
  • the present invention was made in consideration of the above problems, and its purpose is to provide a substrate processing apparatus and a substrate processing method that can reduce the consumption of sulfuric acid.
  • a substrate processing apparatus includes a chamber, a substrate holding unit, a processing space forming unit, a substrate rotating unit, a processing liquid supply unit, and a superheated steam blowing unit.
  • the chamber accommodates a substrate.
  • the substrate holding unit holds the substrate within the chamber.
  • the processing space forming unit includes an opposing member. The opposing member faces the substrate held by the substrate holding unit.
  • the processing space forming unit forms a processing space in which processing of the substrate is performed.
  • the substrate rotating unit rotates the substrate held by the substrate holding unit.
  • the processing liquid supply unit supplies a first mixture of sulfuric acid and hydrogen peroxide to the substrate rotated by the substrate rotating unit.
  • the superheated steam blowing unit blows superheated steam into the processing space.
  • the superheated steam blowing section includes a first superheated steam blowing section that is positioned above the substrate.
  • the first superheated steam blowing section is supported by the opposing member.
  • the first superheated steam blowing section is included in the treatment liquid supply section.
  • the processing space forming section further includes a liquid receiving section.
  • the liquid receiving section receives the first mixed liquid discharged from the substrate rotated by the substrate rotating section.
  • the superheated steam blowing section includes a second superheated steam blowing section supported by the liquid receiving section.
  • the substrate processing apparatus further includes a control unit.
  • the control unit controls the supply of the first mixed liquid and the blowing of the superheated steam.
  • the control unit blows out the superheated steam when the first mixed liquid is supplied.
  • control unit further controls the rotation of the substrate by the substrate rotation unit.
  • the control unit controls the rotation speed of the substrate when the first mixed liquid is being supplied to form a liquid film of the first mixed liquid on the upper surface of the substrate.
  • the control unit stops the supply of the first mixed liquid and controls the rotation speed of the substrate to form a paddle state in which the liquid film is supported on the upper surface of the substrate.
  • the control unit blows out the superheated water vapor when the paddle state is formed.
  • the processing liquid supply unit exclusively supplies the first mixed liquid and hydrogen peroxide solution to the substrate.
  • the control unit further controls the supply of the hydrogen peroxide solution.
  • the control unit stops blowing the superheated water vapor when the hydrogen peroxide solution is being supplied.
  • the processing liquid supply unit exclusively supplies the first mixed liquid and hydrogen peroxide solution to the substrate.
  • the control unit further controls the supply of the hydrogen peroxide solution.
  • the control unit blows the superheated water vapor at a first flow rate when the first mixed liquid is supplied.
  • the control unit blows the superheated water vapor at a second flow rate that is smaller than the first flow rate when the hydrogen peroxide solution is supplied.
  • the processing liquid supply unit exclusively supplies the first mixed liquid and a second mixed liquid obtained by mixing ammonia water, hydrogen peroxide solution, and pure water to the substrate.
  • the control unit further controls the supply of the second mixed liquid.
  • the control unit blows out the superheated water vapor when the second mixed liquid is supplied.
  • the substrate processing method includes the steps of holding a substrate in a chamber by a substrate holding unit, forming a processing space in which the substrate is processed by a processing space forming unit including an opposing member that faces the substrate held by the substrate holding unit, and blowing superheated steam into the processing space.
  • the substrate processing method further includes a step of rotating the substrate held by the substrate holder, and a step of supplying a first mixture of sulfuric acid and hydrogen peroxide to the substrate while the substrate is rotating. The superheated water vapor is blown out when the first mixture is supplied.
  • the substrate processing method further includes a step of controlling the rotation speed of the substrate while the first mixed liquid is being supplied to form a liquid film of the first mixed liquid on the upper surface of the substrate, and a step of stopping the supply of the first mixed liquid and controlling the rotation speed of the substrate to form a paddle state in which the liquid film is supported on the upper surface of the substrate.
  • the paddle state is formed, the superheated water vapor is blown out.
  • the substrate processing method further includes a step of supplying hydrogen peroxide to the substrate while it is rotating. When the hydrogen peroxide is being supplied, the blowing of the superheated steam is stopped.
  • the substrate processing method further includes a step of supplying hydrogen peroxide to the substrate while it is rotating.
  • the superheated water vapor is blown out at a first flow rate.
  • the hydrogen peroxide is being supplied, the superheated water vapor is blown out at a second flow rate that is smaller than the first flow rate.
  • the substrate processing method further includes a step of rotating the substrate held by the substrate holder, and a step of supplying a second mixture of ammonia water, hydrogen peroxide, and pure water to the substrate while the substrate is rotating.
  • the superheated water vapor is blown out when the second mixture is supplied.
  • the substrate processing apparatus and substrate processing method according to the present invention can reduce the consumption of sulfuric acid.
  • FIG. 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention
  • 1 is a cross-sectional view illustrating a schematic configuration of a substrate processing section included in a substrate processing apparatus according to an embodiment of the present invention.
  • 11 is another cross-sectional view showing a schematic configuration of a substrate processing section included in the substrate processing apparatus according to the embodiment of the present invention.
  • FIG. 1A is a bottom view of a nozzle included in a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 1B is a diagram showing a configuration of a fluid supply unit included in the substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention
  • 2 is a flowchart showing a substrate processing method according to an embodiment of the present invention
  • 2 is a flowchart showing a substrate process and a superheated steam process included in a substrate processing method according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a substrate processing section during pre-heating.
  • FIG. 2 is a diagram showing a schematic view of a substrate processing section during SPM processing.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention
  • 2 is a flowchart showing a substrate processing method according to an embodiment of the present invention
  • 2 is a flowchart showing a substrate process and a superheated steam process included in a substrate processing method according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a substrate processing section during pre-heating.
  • FIG. 2 is a diagram showing
  • FIG. 2 is a diagram showing a schematic view of a substrate processing section during puddle processing
  • 1 is a diagram showing a substrate processing section when processing a substrate with hydrogen peroxide solution
  • FIG. 2 is a diagram illustrating a substrate processing section during a rinsing process.
  • 2 is a diagram showing a schematic view of a substrate processing section when a substrate is processed by SC1;
  • FIG. 2 is a diagram illustrating a substrate processing section during a drying process.
  • 1A is a bottom view of a nozzle included in a first modified example of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 1B is a diagram showing a configuration of a fluid supply unit included in the first modified example of the substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 1A is a bottom view of a nozzle included in a second modified example of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 1B is a diagram showing a configuration of a fluid supply unit included in the second modified example of the substrate processing apparatus according to an embodiment of the present invention
  • 1A is a bottom view of a nozzle included in a third modified example of a substrate processing apparatus according to an embodiment of the present invention
  • FIG. 1B is a diagram showing a configuration of a fluid supply unit included in the third modified example of the substrate processing apparatus according to an embodiment of the present invention.
  • the "substrate" to be processed can be a variety of substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks.
  • substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks.
  • FEDs Field Emission Displays
  • substrates for optical disks substrates for magnetic disks
  • substrates for magneto-optical disks substrates, such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disk
  • FIG. 1 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. More specifically, FIG. 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment.
  • the substrate processing apparatus 100 processes substrates W with a processing liquid. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes substrates W one by one.
  • the substrate processing apparatus 100 includes a plurality of substrate processing units 2, a fluid cabinet 10A, a plurality of fluid boxes 10B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.
  • Each load port LP accommodates a stack of multiple substrates W.
  • each unprocessed substrate W substrate W before processing
  • has an unwanted resist mask resist film attached to it.
  • the indexer robot IR transports substrates W between the load port LP and the center robot CR.
  • the center robot CR transports substrates W between the indexer robot IR and the substrate processing unit 2.
  • a placement stage (path) on which substrates W are temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured to indirectly transfer substrates W between the indexer robot IR and the center robot CR via the placement stage.
  • the multiple substrate processing units 2 form multiple towers TW (four towers TW in FIG. 1).
  • the multiple towers TW are arranged to surround the center robot CR in a plan view.
  • Each tower TW includes multiple substrate processing units 2 (three substrate processing units 2 in FIG. 1) stacked one above the other.
  • the fluid cabinet 10A contains fluids.
  • the fluids include an inert gas and a processing liquid.
  • Each of the fluid boxes 10B corresponds to one of the multiple towers TW.
  • the inert gas and processing liquid in the fluid cabinet 10A are supplied to all of the substrate processing units 2 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B.
  • the inert gas is, for example, nitrogen gas.
  • the processing liquid includes sulfuric acid (H 2 SO 4 ), hydrogen peroxide (H 2 O 2 ), ammonia water (NH 4 OH), and a rinse liquid.
  • the rinse liquid is pure water.
  • the pure water is, for example, deionized water (DIW).
  • the rinse liquid may be, for example, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (for example, hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). If the rinse liquid is not pure water, the fluid in the fluid cabinet 10A further includes pure water.
  • Each of the substrate processing units 2 supplies processing liquid to the upper surface of the substrate W.
  • the substrate processing units 2 supply a sulfuric acid/hydrogen peroxide mixture (SPM), hydrogen peroxide, rinsing liquid, and SC1 to the substrate W in the following order: SPM, hydrogen peroxide, rinsing liquid, SC1, rinsing liquid.
  • SPM sulfuric acid/hydrogen peroxide mixture
  • SC1 is a mixture of ammonia water, hydrogen peroxide, and pure water.
  • SC1 When SPM is supplied to the upper surface of the substrate W, the resist film (organic matter) is peeled off from the upper surface of the substrate W, and the resist film is removed from the upper surface of the substrate W.
  • SC1 When SC1 is supplied to the upper surface of the substrate W, particles adhering to the upper surface of the substrate W are removed. More specifically, the hydrogen peroxide contained in SC1 oxidizes silicon on the main surface of the substrate W, the silicon oxide is etched by ammonia, and various particles are removed by lift-off. Thus, SC1 peels off and removes resist film residue and insoluble particles.
  • the control device 101 controls the operation of each part of the substrate processing apparatus 100.
  • the control device 101 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 2.
  • the control device 101 includes a control unit 102 and a memory unit 103.
  • the control unit 102 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 103.
  • the control unit 102 has, for example, a processor.
  • the control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor.
  • the control unit 102 may have a general-purpose computing device or a dedicated computing device.
  • the memory unit 103 stores various information for controlling the operation of the substrate processing apparatus 100.
  • the memory unit 103 stores data and computer programs.
  • the data includes various recipe data.
  • the recipe data includes, for example, a process recipe.
  • a process recipe is data that specifies the procedure for substrate processing. Specifically, a process recipe specifies the execution order of a series of processes included in the substrate processing, the content of each process, and the conditions (parameter setting values) for each process.
  • the storage unit 103 has a main storage device.
  • the main storage device is, for example, a semiconductor memory.
  • the storage unit 103 may further have an auxiliary storage device.
  • the auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive.
  • the storage unit 103 may include removable media.
  • Figure 2 is a cross-sectional view that shows a schematic configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment.
  • Figure 3 is another cross-sectional view that shows a schematic configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment.
  • the substrate processing unit 2 includes a chamber 201, an exhaust duct 202, a spin chuck 3, a spin motor unit 4, a substrate heating unit 5, a nozzle 6 included in a fluid supply unit 600, a blowing unit 8, a moving mechanism 20, and a processing space forming unit 70.
  • the fluid supply unit 600 is an example of a processing liquid supply unit.
  • the chamber 201 has a roughly box-like shape.
  • the chamber 201 houses the substrate W, part of the exhaust duct 202, the spin chuck 3, the spin motor unit 4, part of the substrate heating unit 5, the nozzle 6, the blowing unit 8, the moving mechanism 20, and the processing space forming unit 70.
  • the spin chuck 3 holds the substrate W in the chamber 201.
  • the spin chuck 3 is an example of a substrate holding unit. More specifically, the spin chuck 3 holds the substrate W in a horizontal position. As shown in FIG. 2, the spin chuck 3 may have multiple chuck members 31 and a spin base 32.
  • the spin base 32 is approximately disk-shaped and supports multiple chuck members 31 in a horizontal position.
  • the multiple chuck members 31 are arranged on the periphery of the spin base 32.
  • the multiple chuck members 31 clamp the periphery of the substrate W.
  • the multiple chuck members 31 hold the substrate W in a horizontal position.
  • the operation of the multiple chuck members 31 is controlled by the control device 101 (control unit 102).
  • the spin motor unit 4 rotates the substrate W held by the spin chuck 3.
  • the spin motor unit 4 is an example of a substrate rotation unit. More specifically, the spin motor unit 4 rotates the substrate W and the spin chuck 3 together around a rotation axis AX that extends vertically.
  • the control device 101 controls the rotation of the substrate W by the spin motor unit 4.
  • the rotation axis AX passes through the center of the spin base 32.
  • the multiple chuck members 31 are arranged so that the center of the substrate W coincides with the center of the spin base 32. Therefore, the substrate W rotates around the center of the substrate W as the center of rotation.
  • the spin motor unit 4 may have a shaft 41 and a motor body 42.
  • the shaft 41 is coupled to the spin base 32.
  • the motor body 42 rotates the shaft 41.
  • the spin base 32 rotates.
  • the operation of the motor body 42 is controlled by the control device 101 (control unit 102).
  • the processing space forming part 70 includes a blocking member 72.
  • the blocking member 72 faces the substrate W held by the spin chuck 3.
  • the blocking member 72 is an example of a facing member. More specifically, the blocking member 72 is located above the substrate W held by the spin chuck 3.
  • the processing space forming part 70 forms a processing space in which processing of the substrate W (substrate processing) is performed.
  • the processing space is a space that is substantially isolated from the atmosphere outside the processing space. In other words, the processing space is a local space formed inside the chamber 201.
  • the processing space is substantially isolated from the atmosphere inside the chamber 201.
  • the blocking member 72 has a canopy portion 721 and a sidewall portion 722.
  • the canopy portion 721 is a substantially disk-shaped member.
  • the lower surface of the canopy portion 721 faces the upper surface of the substrate W held by the spin chuck 3.
  • the lower surface of the canopy portion 721 faces the spin chuck 3.
  • the sidewall portion 722 is a substantially cylindrical member. The sidewall portion 722 protrudes downward from the outer periphery of the canopy portion 721.
  • the canopy portion 721 extends along a substantially horizontal plane.
  • the diameter of the canopy portion 721 is, for example, larger than the diameter of the substrate W.
  • the diameter of the canopy portion 721 may be larger than the diameter of the spin base 32.
  • the center of the canopy portion 721 may be located on the rotation axis AX.
  • the canopy portion 721 may be a substantially disk-shaped member centered on the rotation axis AX.
  • the side wall portion 722 may be a substantially cylindrical member centered on the rotation axis AX.
  • the blocking member 72 also has a through hole 72a.
  • the through hole 72a penetrates the canopy portion 721.
  • One end of the through hole 72a is located on the lower surface of the canopy portion 721. Therefore, one end of the through hole 72a faces the substrate W held by the spin chuck 3. In other words, one end of the through hole 72a faces the spin chuck 3.
  • the nozzle 6 ejects an inert gas during substrate processing.
  • the nozzle 6 also supplies processing liquid to the substrate W rotated by the spin motor unit 4. More specifically, the nozzle 6 ejects processing liquid toward the substrate W positioned in the processing space.
  • the nozzle 6 supplies SPM, hydrogen peroxide, rinsing liquid, and SC1 to the substrate W in the following order: SPM, hydrogen peroxide, rinsing liquid, SC1, rinsing liquid.
  • the nozzle 6 exclusively supplies SPM, hydrogen peroxide, rinsing liquid, and SC1 to the substrate W.
  • the nozzle 6 is housed in the through hole 72a of the blocking member 72.
  • the tip of the nozzle 6 is exposed from one end of the through hole 72a.
  • the inert gas and processing liquid are ejected from the tip of the nozzle 6.
  • the tip of the nozzle 6 may be located inside the through hole 72a.
  • the tip of the nozzle 6 may be located outside the through hole 72a. In other words, the tip of the nozzle 6 may protrude from the through hole 72a toward the spin chuck 3.
  • the through hole 72a and the nozzle 6 extend in a substantially vertical direction.
  • One end of the through hole 72a is the lower end of the through hole 72a, and the tip of the nozzle 6 is the lower end of the nozzle 6.
  • the through hole 72a is, for example, substantially circular in a plan view.
  • the diameter of the through hole 72a is sufficiently smaller than the diameter of the substrate W.
  • the through hole 72a is, for example, disposed on the rotation axis AX. In this case, the nozzle 6 faces the center of the substrate W held by the spin chuck 3. Therefore, the processing liquid is ejected from the nozzle 6 toward the center of the substrate W.
  • the moving mechanism 20 moves the blocking member 72 in the vertical direction.
  • the moving mechanism 20 includes a holding unit 21, an arm unit 22, an arm base 23, and a lifting unit 24.
  • the arm base 23 extends vertically.
  • the base end of the arm portion 22 is connected to the arm base 23.
  • the arm portion 22 extends horizontally from the arm base 23.
  • the holding portion 21 is connected to the tip of the arm portion 22.
  • the holding portion 21 holds the blocking member 72. More specifically, the holding portion 21 holds the blocking member 72 so that the canopy portion 721 is in a substantially horizontal position.
  • the lifting unit 24 raises and lowers the arm base 23 in the vertical direction. As a result, the blocking member 72 moves up and down. More specifically, the lifting unit 24 raises and lowers the blocking member 72 between the blocking position and the retracted position.
  • Figure 2 shows the blocking member 72 in the blocking position.
  • Figure 3 shows the blocking member 72 in the retracted position. As shown in Figures 2 and 3, the blocking position is a position below the retracted position. In other words, the blocking position is closer to the substrate W held by the spin chuck 3 than the retracted position.
  • the operation of the lifting unit 24 is controlled by the control device 101 (control unit 102).
  • the lifting unit 24 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
  • the control device 101 moves the blocking member 72 from the blocking position to the retracted position, for example, when the substrate W is transferred between the center robot CR and the spin chuck 3 described with reference to FIG. 1. That is, when the substrate W is loaded into the chamber 201, the blocking member 72 retracts to the retracted position. Also, when the substrate W is unloaded from the chamber 201, the blocking member 72 retracts to the retracted position.
  • the retracted position is a position where the hand of the center robot CR can enter the gap between the blocking member 72 and the spin chuck 3.
  • control device 101 moves the blocking member 72 from the retracted position to the blocking position.
  • the processing space is formed by moving the blocking member 72 to the blocking position.
  • the processing space forming unit 70 further includes a liquid receiving unit 71.
  • the liquid receiving unit 71 receives the processing liquid discharged from the substrate W rotated by the spin motor unit 4. As shown in FIG. 2, the liquid receiving unit 71 may have a guard 711 and a guard lifting unit 714.
  • the guard 711 is approximately cylindrical and surrounds the substrate W held by the spin chuck 3.
  • the guard 711 receives the processing liquid discharged from the substrate W. More specifically, the guard 711 receives the processing liquid that splashes from the rotating substrate W.
  • the guard 711 may include a cylindrical guide portion 712 and a cylindrical inclined portion 713.
  • the inclined portion 713 extends obliquely upward toward the rotation axis AX.
  • the guide portion 712 extends downward from the lower end of the inclined portion 713.
  • the inclined portion 713 includes an annular upper end 71a.
  • the upper end 71a of the inclined portion 713 has an inner diameter larger than the blocking member 72.
  • the upper end 71a of the inclined portion 713 corresponds to the upper end of the guard 711.
  • the upper end 71a of the inclined portion 713 may be referred to as the "upper end 71a of the guard 711."
  • the guard lifting section 714 lifts and lowers the guard 711 between a first lower position shown by a two-dot chain line in FIG. 2 and a first upper position shown by a solid line in FIG. 2.
  • the first lower position indicates a position where the upper end 71a of the guard 711 is positioned below the substrate W.
  • the first upper position indicates a position where the upper end 71a of the guard 711 is positioned above the substrate W.
  • the guard lifting unit 714 is controlled by the control device 101 (control unit 102).
  • the guard lifting unit 714 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
  • the control device 101 moves the guard 711 from the first lower position to the first upper position.
  • the guard 711 can receive processing liquid splashed from the substrate W.
  • the control device 101 moves the guard 711 from the first upper position to the first lower position when the substrate W is unloaded from the chamber 201.
  • the substrate W can be transferred between the center robot CR and the spin chuck 3 described with reference to FIG. 1.
  • the guard 711 moves to the first upper position and the blocking member 72 moves to the blocking position, thereby forming a processing space inside the chamber 201.
  • the upper end 71a of the guard 711 arranged in the first upper position surrounds the side wall portion 722 of the blocking member 72 arranged in the blocking position. As a result, a local space (processing space) that is substantially blocked off from the atmosphere inside the chamber 201 is formed.
  • the nozzle 6 ejects an inert gas when processing the substrate W.
  • the inert gas is supplied to the processing space. Since the processing space is substantially isolated from the atmosphere outside the processing space, the processing space is filled with the inert gas. More specifically, the inert gas is constantly supplied to the processing space while the processing space is formed.
  • the holding portion 21 holds the blocking member 72 rotatably.
  • the blocking member 72 moves to the blocking position, it engages with the spin chuck 3.
  • the spin chuck 3 rotates, the blocking member 72 rotates together with the spin chuck 3.
  • the exhaust duct 202 exhausts the gas in the chamber 201 to the outside of the chamber 201. Specifically, the gas in the exhaust duct 202 is constantly sucked in by exhaust equipment (not shown) provided in the factory where the substrate processing apparatus 100 is installed.
  • the upstream end of the exhaust duct 202 is connected to the processing space formed by the processing space forming part 70 below the spin base 32. Therefore, during substrate processing, the inert gas in the processing space is drawn to the upstream end of the exhaust duct 202 by the suction force of the exhaust equipment transmitted through the exhaust duct 202. As a result, the inert gas in the processing space is exhausted outside the chamber 201 through the exhaust duct 202.
  • the chemical atmosphere in the processing space is exhausted to the outside of the chamber 201 through the exhaust duct 202 together with the inert gas.
  • the chemical atmosphere is generated from the tip of the nozzle 6 when the chemical is discharged from the nozzle 6.
  • the chemical atmosphere is also generated from the upper surface of the substrate W when the chemical collides with the upper surface of the substrate W.
  • the chemical atmosphere is also generated when the chemical collides with the peripheral components of the substrate W, such as the spin chuck 3 and the liquid receiving portion 71.
  • the water contained in the SPM evaporates, causing droplets or mist of the SPM to be ejected from the nozzle 6.
  • Fumes may be generated from the substrate W due to the reaction between the SPM and the resist film.
  • the substrate heating unit 5 heats the substrate W held by the spin chuck 3.
  • the substrate heating unit 5 may have a heating member 51, a lifting shaft 52, a power supply unit 53, and a heater lifting unit 54.
  • the heating member 51 is approximately disk-shaped and is located between the substrate W held by the chuck member 31 and the spin base 32.
  • a heater is embedded in the heating member 51.
  • the heater includes, for example, a resistor.
  • the power supply unit 53 applies electricity to the heater embedded in the heating member 51 to heat the heating member 51.
  • the power supply unit 53 is controlled by the control device 101 (control unit 102).
  • the lifting shaft 52 is a generally rod-shaped member that extends generally vertically.
  • the lifting shaft 52 is connected to the heating member 51.
  • the heater lifting unit 54 raises and lowers the heating member 51 by raising and lowering the lifting shaft 52. Specifically, the heater lifting unit 54 raises and lowers the heating member 51 between the lower surface of the substrate W held by the chuck member 31 and the upper surface of the spin base 32.
  • the heater lifting unit 54 is controlled by the control device 101 (control unit 102).
  • the heater lifting unit 54 may include, for example, a ball screw mechanism and an electric motor that provides a driving force to the ball screw mechanism.
  • the blowing section 8 blows out superheated steam into the processing space.
  • the superheated steam fills the processing space.
  • the blowing section 8 is an example of a superheated steam blowing section. Note that superheated steam is generated by heating water vapor. Therefore, the temperature of superheated steam is higher than that of water vapor. Specifically, the temperature of water vapor when it is generated is 100°C, and the temperature of superheated steam when it is generated is higher than 100°C.
  • the blowing section 8 includes a first blowing section 81 and a second blowing section 82.
  • the first blowing section 81 is disposed above the substrate W held by the spin chuck 3.
  • the first blowing section 81 is an example of a first superheated steam blowing section.
  • the first blowing section 81 is supported on the inner wall surface of the blocking member 72.
  • the second blowing section 82 is supported on the liquid receiving section 71.
  • the second blowing section 82 is supported on the inner wall surface of the guard 711.
  • the second blowing section 82 is an example of a second superheated steam blowing section.
  • the first blowing section 81 may be fixed to the blocking member 72 via a bracket.
  • the second blowing section 82 may be fixed to the guard 711 via a bracket.
  • control device 101 controls the blowing of superheated steam from blowing section 8 by control device 101 (control section 102).
  • control device 101 controls superheated steam to be blown from blowing section 8 when SPM is being supplied to substrate W.
  • substrate processing using SPM may be referred to as "SPM processing.”
  • the processing space can be filled with superheated water vapor during SPM processing. Therefore, the time required to raise the temperature of the substrate W can be shortened compared to a configuration in which the temperature of the substrate W is raised only by the temperature of the SPM. As a result, the processing time can be shortened and the amount of SPM consumed can be reduced. Therefore, the amount of sulfuric acid consumed can be reduced.
  • SPM flows on the upper surface of the substrate W.
  • the SPM discharged onto the upper surface of the substrate W flows from the center to the periphery of the substrate W and is discharged from the substrate W.
  • the processing space is filled with superheated water vapor, so that heat can be applied to the substrate W from its lower surface. Therefore, the temperature of the substrate W can be raised efficiently.
  • the processing space is filled with superheated water steam, so that the temperatures of the components arranged around the substrate W, such as the spin chuck 3, the liquid receiving portion 71, and the blocking member 72, can be increased by the superheated water steam. Therefore, the time required to increase the temperature of the substrate W can be shortened.
  • superheated steam contains a small amount of moisture. Therefore, when the moisture contained in the superheated steam comes into contact with the SPM and reacts with the SPM, the heat generated can be used to raise the temperature of the substrate W.
  • the superheated water vapor is sucked together with the inert gas to the upstream end of the exhaust duct 202 by the suction force of the exhaust equipment transmitted through the exhaust duct 202.
  • the droplets contained in the superheated water vapor collide with the chemical components floating in the processing space.
  • the chemical components are accelerated toward the upstream end of the exhaust duct 202, and the chemical atmosphere is efficiently exhausted outside the chamber 201 through the exhaust duct 202.
  • the first blowing section 81 is disposed above the substrate W. Therefore, the superheated water vapor droplets are likely to collide with the chemical components generated from the substrate W before the chemical components generated from the substrate W adhere to the members surrounding the substrate W. This makes it possible to efficiently suppress the diffusion of the chemical atmosphere.
  • the first blowing section 81 is supported by the blocking member 72. Therefore, the superheated water vapor droplets are likely to collide with the chemical components generated from the nozzle 6 before the chemical components are deposited on the members surrounding the substrate W. This makes it possible to efficiently suppress the diffusion of the chemical atmosphere.
  • the first blowing section 81 will now be described further.
  • the first blowing section 81 is located outside the substrate W held by the spin chuck 3 in a plan view. Therefore, even if water droplets drip from the first blowing section 81, the water droplets are unlikely to fall onto the substrate W.
  • the first blowing section 81 is supported on the inner circumferential surface of the side wall section 722. Therefore, the first blowing section 81 is disposed at a position relatively far from the nozzle 6. Therefore, the superheated water steam is less likely to be attracted to the SPM discharged from the nozzle 6. As a result, the superheated water steam is less likely to be unevenly distributed within the processing space, and the substrate W and the components disposed around the substrate W can be efficiently heated by the superheated water steam.
  • the second blowing section 82 is positioned below the substrate W.
  • the second blowing section 82 is supported by the inner circumferential surface of the guide section 712.
  • the substrate processing apparatus 100 has two blowing sections 8 (first blowing section 81 and second blowing section 82), but the number of blowing sections 8 may be one or three or more.
  • the blowing section 8 may include only one of the first blowing section 81 and the second blowing section 82.
  • the substrate processing apparatus 100 may have two or more blowing sections 8 supported by the blocking member 72, or two or more blowing sections 8 supported by the liquid receiving section 71.
  • Figure 4(a) is a bottom view of the nozzle 6 included in the substrate processing apparatus 100 of this embodiment, as viewed from below.
  • Figure 4(b) is a diagram showing the configuration of a fluid supply unit 600 included in the substrate processing apparatus 100 of this embodiment.
  • the nozzle 6 has a first outlet 61 to a fourth outlet 64.
  • the first outlet 61 to the fourth outlet 64 open on the bottom surface (tip) of the nozzle 6.
  • the fourth outlet 64 is annular.
  • the fourth outlet 64 extends along the outer periphery of the nozzle 6 on the bottom surface (tip) of the nozzle 6.
  • SPM and hydrogen peroxide solution are exclusively ejected from the first outlet 61.
  • SC1 is ejected from the second outlet 62.
  • Rinse liquid is ejected from the third outlet 63.
  • An inert gas is ejected from the fourth outlet 64.
  • the inert gas is nitrogen gas.
  • the fluid supply unit 600 further includes a first chemical liquid supply unit 610, a second chemical liquid supply unit 620, a rinsing liquid supply unit 630, and a gas supply unit 640.
  • control device 101 controls the ejection of SPM from nozzle 6 and the ejection of hydrogen peroxide solution from nozzle 6 by controlling first chemical liquid supply unit 610.
  • the first chemical liquid supply unit 610 exclusively supplies SPM and hydrogen peroxide solution to the nozzle 6.
  • the SPM supplied from the first chemical liquid supply unit 610 to the nozzle 6 is discharged from the first outlet 61 described with reference to FIG. 4(a).
  • the hydrogen peroxide solution supplied from the first chemical liquid supply unit 610 to the nozzle 6 is discharged from the first outlet 61 described with reference to FIG. 4(a).
  • the first chemical liquid supply unit 610 may have a first chemical liquid supply pipe 611, a first component on-off valve 613, a second component on-off valve 615, and a heater 617.
  • a portion of the first chemical liquid supply pipe 611 is housed in the chamber 201 described with reference to FIG. 2.
  • the first component on-off valve 613, the second component on-off valve 615, and the heater 617 are housed in the fluid box 10B described with reference to FIG. 1.
  • the first chemical supply pipe 611 exclusively supplies SPM and hydrogen peroxide to the nozzle 6.
  • the first chemical supply pipe 611 is a tubular member, and distributes SPM and hydrogen peroxide to the nozzle 6.
  • the first chemical supply pipe 611 includes a first pipe 611a and a second pipe 611b. One end of the first pipe 611a is connected to the nozzle 6. One end of the second pipe 611b is connected to the first pipe 611a. Sulfuric acid flows into the first pipe 611a. Hydrogen peroxide flows into the second pipe 611b.
  • the heater 617 is installed in the first pipe 611a.
  • the heater 617 is installed in the first pipe 611a upstream of the first component on-off valve 613.
  • the heater 617 heats the sulfuric acid flowing through the first pipe 611a.
  • the first component on-off valve 613 is disposed in the first pipe 611a. Specifically, the first component on-off valve 613 is disposed upstream of the connection point CP between the first pipe 611a and the second pipe 611b.
  • the second component on-off valve 615 is disposed in the second pipe 611b.
  • the first component opening/closing valve 613 and the second component opening/closing valve 615 can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operations of the first component opening/closing valve 613 and the second component opening/closing valve 615.
  • the actuators of the first component opening/closing valve 613 and the second component opening/closing valve 615 are, for example, pneumatic actuators or electric actuators.
  • the control device 101 When supplying SPM to the substrate W, the control device 101 (control unit 102) opens the first component on-off valve 613 and the second component on-off valve 615.
  • the first component on-off valve 613 and the second component on-off valve 615 are opened, sulfuric acid flows through the first pipe 611a toward the nozzle 6, and hydrogen peroxide flows through the second pipe 611b toward the connection point CP.
  • the sulfuric acid and hydrogen peroxide are mixed at the connection point CP to generate SPM.
  • the SPM flows through the first pipe 611a toward the nozzle 6, and is ejected from the nozzle 6 toward the substrate W.
  • the control device 101 When supplying hydrogen peroxide to the substrate W, the control device 101 (control unit 102) closes the first component on-off valve 613 and opens the second component on-off valve 615.
  • the first component on-off valve 613 is closed and the second component on-off valve 615 is opened, the flow of sulfuric acid through the first pipe 611a stops, and the hydrogen peroxide flows through the second pipe 611b toward the connection point CP.
  • the hydrogen peroxide that has flowed into the first pipe 611a flows through the first pipe 611a toward the nozzle 6, and the hydrogen peroxide is ejected from the nozzle 6 toward the substrate W.
  • control device 101 stops the ejection of SPM and hydrogen peroxide solution from the nozzle 6, it closes the first component opening/closing valve 613 and the second component opening/closing valve 615.
  • the first component opening/closing valve 613 and the second component opening/closing valve 615 are closed, the flow of sulfuric acid through the first pipe 611a stops, and the flow of hydrogen peroxide solution through the second pipe 611b stops.
  • the ejection of SC1 from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the ejection of SC1 from the nozzle 6 by controlling the second chemical liquid supply unit 620.
  • the second chemical liquid supply unit 620 supplies SC1 to the nozzle 6.
  • the SC1 supplied from the second chemical liquid supply unit 620 to the nozzle 6 is discharged from the second discharge port 62 described with reference to FIG. 4(a).
  • the second chemical liquid supply unit 620 may have a second chemical liquid supply pipe 621 and a chemical liquid on-off valve 623.
  • a portion of the second chemical liquid supply pipe 621 is housed in the chamber 201 described with reference to FIG. 2.
  • the chemical liquid on-off valve 623 is housed in the fluid box 10B described with reference to FIG. 1.
  • the second chemical supply pipe 621 supplies SC1 to the nozzle 6.
  • the second chemical supply pipe 621 is a tubular member that distributes SC1 to the nozzle 6.
  • the chemical liquid on-off valve 623 is disposed in the second chemical liquid supply pipe 621.
  • the chemical liquid on-off valve 623 can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the chemical liquid on-off valve 623.
  • the actuator of the chemical liquid on-off valve 623 is, for example, a pneumatic actuator or an electric actuator.
  • the control device 101 opens the chemical liquid on-off valve 623 when supplying SC1 to the substrate W.
  • SC1 flows through the second chemical liquid supply pipe 621 toward the nozzle 6.
  • SC1 is ejected from the nozzle 6 toward the substrate W.
  • control device 101 stops the discharge of SC1 from the nozzle 6, it closes the chemical solution opening/closing valve 623.
  • the chemical solution opening/closing valve 623 is closed, the flow of SC1 through the second chemical solution supply pipe 621 is stopped.
  • the discharge of the rinsing liquid from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the discharge of the rinsing liquid from the nozzle 6 by controlling the rinsing liquid supply unit 630.
  • the rinse liquid supply unit 630 supplies the rinse liquid to the nozzle 6.
  • the rinse liquid supplied from the rinse liquid supply unit 630 to the nozzle 6 is discharged from the third discharge port 63 described with reference to FIG. 4(a).
  • the rinse liquid supply unit 630 may have a rinse liquid supply pipe 631 and a rinse liquid opening/closing valve 633.
  • a portion of the rinse liquid supply pipe 631 is housed in the chamber 201 described with reference to FIG. 2.
  • the rinse liquid opening/closing valve 633 is housed in the fluid box 10B described with reference to FIG. 1.
  • the rinse liquid supply pipe 631 supplies rinse liquid to the nozzle 6.
  • the rinse liquid supply pipe 631 is a tubular member that circulates the rinse liquid to the nozzle 6.
  • the rinse liquid opening/closing valve 633 is disposed in the rinse liquid supply pipe 631.
  • the rinse liquid opening/closing valve 633 can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the rinse liquid opening/closing valve 633.
  • the actuator of the rinse liquid opening/closing valve 633 is, for example, a pneumatic actuator or an electric actuator.
  • the control device 101 opens the rinse liquid opening/closing valve 633 when supplying rinse liquid to the substrate W.
  • the rinse liquid opening/closing valve 633 is opened, the rinse liquid flows through the rinse liquid supply pipe 631 toward the nozzle 6. As a result, the rinse liquid is ejected from the nozzle 6 toward the substrate W.
  • control device 101 stops the discharge of the rinse liquid from the nozzle 6, it closes the rinse liquid opening/closing valve 633.
  • the rinse liquid opening/closing valve 633 is closed, the flow of the rinse liquid through the rinse liquid supply pipe 631 stops.
  • the discharge of nitrogen gas from the nozzle 6 is controlled by the control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) controls the discharge of nitrogen gas from the nozzle 6 by controlling the gas supply unit 640.
  • the gas supply unit 640 supplies nitrogen gas to the nozzle 6.
  • the nitrogen gas supplied from the gas supply unit 640 to the nozzle 6 is discharged from the fourth outlet 64 described with reference to FIG. 4(a).
  • the gas supply unit 640 may have a gas supply pipe 641 and a gas on-off valve 643.
  • a portion of the gas supply pipe 641 is housed in the chamber 201 described with reference to FIG. 2.
  • the gas on-off valve 643 is housed in the fluid box 10B described with reference to FIG. 1.
  • the gas supply pipe 641 supplies nitrogen gas to the nozzle 6.
  • the gas supply pipe 641 is a tubular member that distributes the nitrogen gas to the nozzle 6.
  • the gas on-off valve 643 is disposed in the gas supply pipe 641.
  • the gas on-off valve 643 can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the gas on-off valve 643.
  • the actuator of the gas on-off valve 643 is, for example, a pneumatic actuator or an electric actuator.
  • the control device 101 opens the gas on-off valve 643.
  • the control device 101 opens the gas on-off valve 643.
  • nitrogen gas flows through the gas supply pipe 641 toward the nozzle 6, and the nitrogen gas is discharged from the nozzle 6. As a result, nitrogen gas is supplied from the nozzle 6 to the processing space.
  • control device 101 closes the gas on-off valve 643.
  • the gas on-off valve 643 is closed, the flow of nitrogen gas through the gas supply pipe 641 stops, and the discharge of nitrogen gas from the nozzle 6 stops.
  • SPM and hydrogen peroxide are exclusively discharged from the first outlet 61 of the nozzle 6, but the nozzle 6 may have separate outlets for discharging SPM and hydrogen peroxide.
  • the fluid supply unit 600 is provided with separate chemical supply lines for supplying SPM to the nozzle 6 and hydrogen peroxide to the nozzle 6.
  • FIG. 5 is a diagram showing the configuration of the first blowing section 81 and the superheated steam supply section 800 included in the substrate processing apparatus 100 of this embodiment.
  • the first blowing section 81 is annular and extends along the inner circumferential surface of the side wall portion 722 of the blocking member 72 described with reference to FIG. 2.
  • the first blowing section 81 is a tubular member, and superheated steam flows through the inside of the first blowing section 81.
  • At least one blowing outlet (not shown) is formed on the inner circumferential side of the first blowing section 81.
  • the blowing outlet is an opening, and the superheated steam flowing through the first blowing section 81 is blown out from the blowing outlet of the first blowing section 81 and supplied to the treatment space.
  • FIG. 5 illustrates a first blowing section 81 having four blowing outlets. The arrows in FIG. 5 indicate the superheated steam blown out from the first blowing section 81.
  • the configuration of the second blowing section 82 described with reference to FIG. 2 is the same as that of the first blowing section 81.
  • the second blowing section 82 is annular and extends along the inner circumferential surface of the guard 711 described with reference to FIG. 2.
  • the second blowing section 82 is a tubular member, and superheated steam flows through the interior of the second blowing section 82.
  • At least one blowing port (not shown) is formed on the inner circumferential side of the second blowing section 82.
  • the blowing port is an opening, and the superheated steam flowing through the second blowing section 82 is blown out from the blowing port of the second blowing section 82 and supplied to the treatment space.
  • the first blowing section 81 is annular, by forming multiple blowing outlets in the first blowing section 81, superheated steam can be supplied to the treatment space without bias.
  • the number of blowing outlets in the first blowing section 81 may be one.
  • the second blowing section 82 is annular, forming multiple blowing outlets in the second blowing section 82 allows superheated steam to be supplied to the treatment space without bias.
  • the number of blowing outlets in the second blowing section 82 may be one.
  • the configuration of the substrate processing apparatus 100 is simpler than, for example, the case where the first blowing section 81 is formed of multiple nozzles arranged along a circumference, making it easier to manufacture the substrate processing apparatus 100.
  • the configuration of the substrate processing apparatus 100 is simpler than, for example, the case where the second blowing section 82 is formed of multiple nozzles arranged along a circumference, making it easier to manufacture the substrate processing apparatus 100.
  • the first blowing section 81 may be formed of at least one nozzle.
  • the second blowing section 82 may be formed of at least one nozzle.
  • FIG. 6 is a diagram showing the configuration of the substrate processing apparatus 100 of this embodiment.
  • the substrate processing apparatus 100 further includes a superheated steam supply unit 800.
  • the superheated steam supply unit 800 supplies superheated steam to the first blowing unit 81.
  • the superheated steam supply unit 800 supplies superheated steam to the second blowing unit 82.
  • the superheated steam supply unit 800 has a steam generation unit 800A, a first steam pipe 811, a superheated steam valve 812, a flow control valve 813, and a superheated steam generation heater 803. As shown in FIG. 6, the superheated steam supply unit 800 further has a second steam pipe 821.
  • the water vapor generating unit 800A is housed in the fluid cabinet 10A described with reference to FIG. 1.
  • the superheated water vapor valve 812, the flow control valve 813, and the superheated water vapor generating heater 803 are housed in the fluid box 10B described with reference to FIG. 1.
  • a portion of the first water vapor pipe 811 and a portion of the second water vapor pipe 821 are housed in the chamber 201 described with reference to FIG. 2.
  • the water vapor generating unit 800A generates water vapor. As shown in FIG. 5, the water vapor generated from the water vapor generating unit 800A flows into the first water vapor pipe 811. Specifically, the water vapor generating unit 800A has a storage unit 801 and a water vapor generation heater 802. The storage unit 801 stores pure water. The water vapor generation heater 802 heats the pure water stored in the storage unit 801 to generate water vapor. One end of the first water vapor pipe 811 is connected to the storage unit 801. The operation of the water vapor generation heater 802 is controlled by the control device 101 (control unit 102).
  • the other end of the first steam pipe 811 is connected to the first blowing section 81.
  • a superheated steam valve 812, a flow control valve 813, and a superheated steam generating heater 803 are interposed in the first steam pipe 811.
  • the first steam pipe 811 is a tubular member through which water vapor and superheated steam flow.
  • the superheated steam generation heater 803 heats the water vapor that flows from the storage section 801 into the first steam pipe 811 to generate superheated steam.
  • the superheated steam flows through the first steam pipe 811 and flows into the first blowing section 81.
  • the second steam pipe 821 is a tubular member through which superheated steam flows. As shown in FIG. 6, one end of the second steam pipe 821 is connected to the first steam pipe 811 downstream of the superheated steam valve 812. Therefore, superheated steam flows from the first steam pipe 811 to the second steam pipe 821. The other end of the second steam pipe 821 is connected to the second blowing section 82. The superheated steam that flows into the second steam pipe 821 flows through the second steam pipe 821 and into the second blowing section 82.
  • the superheated steam valve 812 is an opening/closing valve and can be switched between an open state and a closed state.
  • the control device 101 controls the opening/closing operation of the superheated steam valve 812.
  • the actuator of the superheated steam valve 812 is, for example, an air actuator or an electric actuator.
  • the flow control valve 813 controls the flow rate of superheated steam flowing through the first steam pipe 811 and the second steam pipe 821. Specifically, the opening degree of the flow control valve 813 can be controlled, and the flow rate of superheated steam flowing through the first steam pipe 811 and the second steam pipe 821 corresponds to the opening degree of the flow control valve 813.
  • the actuator of the flow control valve 813 is, for example, an electric actuator.
  • the flow control valve 813 may be, for example, a motor needle valve.
  • the opening degree of the flow control valve 813 is controlled by the control device 101 (control unit 102).
  • FIG. 7 is a flowchart showing the substrate processing method of this embodiment.
  • Figure 7 shows the flow of processing by the control device 101 (control unit 102).
  • the substrate processing method of this embodiment includes steps S1 to S8.
  • the control device 101 control unit 102 first controls the center robot CR to load the substrate W into the chamber 201 (step S1).
  • the control device 101 (control unit 102) controls the spin chuck 3 to hold the substrate W loaded by the center robot CR (step S2).
  • the spin chuck 3 holds the substrate W in the chamber 201.
  • control device 101 controls the moving mechanism 20 to lower the blocking member 72 from the retracted position to the blocking position (step S3). As a result, a local space (processing space) surrounded by the blocking member 72 and the liquid receiving portion 71 is formed.
  • the control device 101 controls the substrate processing unit 2 to perform substrate processing (step S4). Specifically, the control device 101 (controller 102) controls the substrate processing unit 2 to supply SPM, hydrogen peroxide, rinsing liquid, and SC1 to the substrate W in the following order: SPM, hydrogen peroxide, rinsing liquid, SC1, rinsing liquid.
  • control device 101 controls the gas supply unit 640 described with reference to FIG. 4(b) to supply an inert gas (nitrogen gas) to the processing space. More specifically, the control device 101 (control unit 102) causes the gas supply unit 640 to continue supplying the inert gas (nitrogen gas) while the processing space is being formed by the processing space forming unit 70. Thus, while the processing space is being formed, the inert gas (nitrogen gas) fills the processing space. In other words, while the substrate processing is being performed, the inert gas (nitrogen gas) fills the processing space.
  • control device 101 causes the substrate processing unit 2 to execute superheated steam processing in parallel with the substrate processing (step S5). Specifically, the control device 101 (control unit 102) controls the superheated steam supply unit 800 described with reference to Figures 5 and 6 to blow superheated steam from the blowing unit 8 into the processing space. For example, the control device 101 (control unit 102) blows superheated steam from the blowing unit 8 during SPM processing.
  • control device 101 controls the gas supply unit 640 described with reference to FIG. 4(b) to stop the supply of the inert gas (nitrogen gas) to the processing space. After that, the control device 101 (control unit 102) controls the movement mechanism 20 to raise the blocking member 72 from the blocking position to the retracted position (step S6).
  • control device 101 controls the spin chuck 3 to release its hold on the substrate W (step S7).
  • control device 101 controls the center robot CR to unload the substrate W from the chamber 201 (step S8). As a result, the process shown in FIG. 7 is completed.
  • FIG. 8 is a flow chart showing the substrate processing (step S4) and superheated steam processing (step S5) included in the substrate processing method of this embodiment.
  • FIG. 9 is a diagram showing the substrate processing section 2 during pre-heating.
  • FIG. 10 is a diagram showing the substrate processing section 2 during SPM processing.
  • FIG. 11 is a diagram showing the substrate processing section 2 during puddle processing.
  • FIG. 12 is a diagram showing the substrate processing section 2 when processing a substrate W with hydrogen peroxide solution.
  • FIG. 13 is a diagram showing the substrate processing section 2 during rinsing processing.
  • FIG. 14 is a diagram showing the substrate processing section 2 when processing a substrate W with SC1.
  • FIG. 15 is a diagram showing the substrate processing section 2 during drying processing.
  • control device 101 controls the substrate heating unit 5 to heat the substrate W (step S41).
  • the temperature of the substrate W is raised before the SPM processing is performed.
  • the efficiency of resist film stripping by SPM is improved.
  • control device 101 controls the power supply unit 53 to energize the heater embedded in the heating member 51. As a result, the heating member 51 is heated.
  • the control device 101 also controls the heater lift unit 54 to lift the heating member 51 from the second lower position to the second upper position.
  • the second lower position is a position where the heating member 51 is close to the upper surface of the spin base 32.
  • the second lower position may be a position where the heating member 51 is in contact with the upper surface of the spin base 32.
  • the second upper position is a position where the heating member 51 is close to the lower surface of the substrate W.
  • control device 101 preheats the substrate W for a predetermined time, and then controls the spin motor unit 4 to start the rotation of the substrate W held by the spin chuck 3 (see FIG. 10).
  • the control device 101 controls the first chemical liquid supply unit 610 described with reference to FIG. 4(b) to eject SPM from the nozzle 6 toward the rotating substrate W (step S42).
  • SPM is supplied to the upper surface of the rotating substrate W, and a liquid film of SPM is formed on the upper surface of the substrate W.
  • the control device 101 controls the rotation speed of the substrate W when SPM is supplied to the substrate W to form a liquid film of SPM on the upper surface of the substrate W.
  • control device 101 performs a first superheated steam treatment when supplying SPM to the substrate W (step S51). Specifically, as shown in FIG. 10, the control device 101 (control unit 102) controls the superheated steam supply unit 800 described with reference to FIGS. 5 and 6 to blow superheated steam from the blowing unit 8 (first blowing unit 81 and second blowing unit 82) into the processing space.
  • the processing space can be filled with superheated water vapor during SPM processing. Therefore, as already explained, the time required to raise the temperature of the substrate W can be shortened. As a result, the processing time can be shortened and the consumption of SPM can be reduced. Therefore, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as already explained, the diffusion of the chemical atmosphere can be suppressed by the superheated water vapor.
  • the timing to start blowing out superheated steam from the blowing section 8 may be before the start of ejection of SPM, or may be the same timing as the start of ejection of SPM. Alternatively, the timing to start blowing out superheated steam from the blowing section 8 may be after the start of ejection of SPM.
  • the control device 101 (control section 102) may cause the blowing section 8 to blow out superheated steam continuously or intermittently.
  • the control device 101 may cause the blowing unit 8 to blow superheated steam only before the ejection of SPM starts, or may cause the blowing unit 8 to blow superheated steam only when the ejection of SPM starts.
  • the control device 101 may cause the blowing unit 8 to blow superheated steam for a period between the start and end of ejection of SPM, which is shorter than the period between the start and end of ejection of SPM.
  • control device 101 may control the heater lifting unit 54 to lower the heating member 51 from the second upper position to the second lower position before starting to eject SPM.
  • the control device 101 controls the first chemical liquid supply unit 610 described with reference to FIG. 4(b) to stop the discharge of SPM. Then, the control device 101 (control unit 102) controls the rotation speed of the substrate W by the spin motor unit 4 to form a paddle state in which the SPM liquid film is supported on the upper surface of the substrate W (step S43). For example, the control device 101 (control unit 102) may stop the rotation of the substrate W to form the paddle state (see FIG. 11). Alternatively, the control device 101 (control unit 102) may rotate the substrate W at a low speed to form the paddle state. By forming the paddle state, the efficiency of resist stripping by SPM can be improved.
  • the control device 101 performs a second superheated steam treatment when the paddle state is formed (during paddle treatment) (step S52). Specifically, as shown in FIG. 11, the control device 101 (control unit 102) controls the superheated steam supply unit 800 to blow out superheated steam from the blowing unit 8. The control device 101 (control unit 102) may continue to supply superheated steam from the SPM treatment to the paddle treatment.
  • the processing space can be filled with superheated water vapor during paddle processing. Therefore, the temperature of the substrate W is less likely to drop during paddle processing. This improves the efficiency of resist stripping using SPM. As a result, the processing time can be shortened and the consumption of SPM can be reduced. In other words, the consumption of sulfuric acid can be reduced. Furthermore, according to this embodiment, as already explained, the diffusion of the chemical atmosphere can be suppressed by the superheated water vapor.
  • the processing space can be filled with superheated water steam, so heat can be applied directly to the substrate W from the lower surface side of the substrate W.
  • the temperature of the substrate W is less likely to drop during puddle processing. This makes it possible to improve the efficiency of resist stripping by SPM.
  • superheated water steam can be efficiently supplied from the second blowing section 82 toward the lower surface of the substrate W, making it possible to further suppress a drop in the temperature of the substrate W during puddle processing.
  • control device 101 may control the heater lifting unit 54 to raise the heating member 51 from the second lower position to the second upper position, thereby heating the substrate W with the heating member 51.
  • control device 101 controls the spin motor unit 4 to start rotating the substrate W held by the spin chuck 3 (see FIG. 12).
  • the control device 101 controls the spin motor unit 4 to increase the rotation speed of the substrate W.
  • the control device 101 controls the first chemical liquid supply unit 610 described with reference to FIG. 4(b) to eject hydrogen peroxide solution from the nozzle 6 toward the rotating substrate W (step S44).
  • hydrogen peroxide solution is supplied to the upper surface of the rotating substrate W, and a liquid film of hydrogen peroxide solution is formed on the upper surface of the substrate W.
  • the control device 101 controls the rotation speed of the substrate W to form a liquid film of hydrogen peroxide solution on the upper surface of the substrate W.
  • the ejection of hydrogen peroxide solution causes SPM to be discharged from the upper surface of the substrate W, and the liquid film of SPM is replaced with a liquid film of hydrogen peroxide solution.
  • the control device 101 performs a third superheated steam treatment (step S53) when hydrogen peroxide solution is supplied to the substrate W. Specifically, as shown in FIG. 12, the control device 101 (control unit 102) controls the superheated steam supply unit 800 described with reference to FIG. 5 and FIG. 6 to reduce the flow rate of superheated steam blown out from the blowing unit 8 (first blowing unit 81 and second blowing unit 82).
  • control device 101 blows superheated water steam from the blowing unit 8 at a first flow rate during SPM processing and puddle processing, and blows superheated water steam from the blowing unit 8 at a second flow rate smaller than the first flow rate when hydrogen peroxide solution is supplied to the substrate W.
  • the control device 101 adjusts the flow rate of the superheated water steam by controlling the flow control valve 813 shown in Figures 5 and 6.
  • control device 101 may heat the substrate W using the heating member 51 when supplying hydrogen peroxide solution to the substrate W.
  • Hydrogen peroxide has the potential to oxidize the substrate W.
  • the higher the temperature of the hydrogen peroxide the more easily the substrate W is oxidized.
  • the higher the temperature of the substrate W the more easily the substrate W is oxidized.
  • the amount of superheated water steam supplied to the processing space when hydrogen peroxide is supplied to the substrate W can be reduced.
  • the increase in temperature of the hydrogen peroxide due to the superheated water steam is suppressed, and the temperature of the substrate W is more likely to decrease, so that oxidation of the substrate W due to hydrogen peroxide can be suppressed.
  • control device 101 controls the first chemical liquid supply unit 610 described with reference to FIG. 4(b) to stop the discharge of hydrogen peroxide solution.
  • the control device 101 controls the rinse liquid supply unit 630 described with reference to FIG. 4(b) to discharge the rinse liquid from the nozzle 6 toward the rotating substrate W while rotating the substrate W held by the spin chuck 3 (step S45).
  • the rinse liquid is supplied to the upper surface of the rotating substrate W, and a liquid film of the rinse liquid is formed on the upper surface of the substrate W.
  • the control device 101 controls the rotation speed of the substrate W to form a liquid film of the rinse liquid on the upper surface of the substrate W.
  • the hydrogen peroxide solution is discharged from the upper surface of the substrate W by the discharge of the rinse liquid, and the liquid film of the hydrogen peroxide solution is replaced with a liquid film of the rinse liquid.
  • control device 101 controls the superheated water vapor supply unit 800 described with reference to FIG. 5 and FIG. 6 to stop the blowing of superheated water vapor from the blowing unit 8 before starting the supply of rinsing liquid to the substrate W.
  • control device 101 stops the supply of superheated water vapor to the processing space.
  • the supply of superheated water vapor to the processing space is stopped before the supply of rinsing liquid to the substrate W is started, so the rinsing liquid is less likely to evaporate from the top surface of the substrate W than when the supply of superheated water vapor to the processing space is continued.
  • control device 101 may control the heater lifting unit 54 to lower the heating member 51 from the second upper position to the second lower position before starting to discharge the rinsing liquid. This makes it difficult for the rinsing liquid to evaporate from the upper surface of the substrate W.
  • control device 101 controls the rinsing liquid supply unit 630 described with reference to FIG. 4(b) to stop the discharge of the rinsing liquid.
  • control device 101 controls the second chemical liquid supply unit 620 described with reference to FIG. 4(b) to discharge SC1 from the nozzle 6 toward the rotating substrate W while rotating the substrate W held by the spin chuck 3 (step S46).
  • SC1 is supplied to the upper surface of the rotating substrate W, and a liquid film of SC1 is formed on the upper surface of the substrate W.
  • control device 101 controls the rotation speed of the substrate W to form a liquid film of SC1 on the upper surface of the substrate W.
  • the discharge of SC1 causes the rinsing liquid to be discharged from the upper surface of the substrate W, and the liquid film of the rinsing liquid is replaced with a liquid film of SC1.
  • the control device 101 performs the fourth superheated steam treatment when supplying SC1 to the substrate W (step S54). Specifically, as shown in FIG. 14, the control device 101 (control unit 102) controls the superheated steam supply unit 800 described with reference to FIG. 5 and FIG. 6 to blow out superheated steam from the blowing unit 8 (first blowing unit 81 and second blowing unit 82).
  • superheated steam is supplied to the processing space when SC1 is supplied to the substrate W, so the temperature of the SC1 supplied to the upper surface of the substrate W can be raised. As a result, the main surface of the substrate W becomes susceptible to oxidation by SC1.
  • control device 101 controls the second chemical liquid supply unit 620 described with reference to FIG. 4(b) to stop the discharge of SC1.
  • control device 101 After stopping the supply of SC1 to the substrate W, the control device 101 (control unit 102) ejects the rinse liquid from the nozzle 6 toward the rotating substrate W, similar to step S45 (step S47). As a result, the ejection of the rinse liquid causes SC1 to be discharged from the top surface of the substrate W, and a liquid film of the rinse liquid is formed on the top surface of the substrate W.
  • control device 101 stops the blowing of superheated steam from the blowing unit 8 during the rinsing process. In other words, the control device 101 (control unit 102) stops the supply of superheated steam to the processing space.
  • control device 101 controls the rinsing liquid supply unit 630 described with reference to FIG. 4(b) to stop the discharge of the rinsing liquid.
  • control device 101 controls the rotation speed of the substrate W by the spin motor unit 4 to perform a drying process to remove the rinsing liquid from the upper surface of the substrate W and dry the upper surface of the substrate W (step S48). As a result, the process shown in FIG. 8 is completed.
  • control device 101 controls the spin motor unit 4 to rotate the substrate W at high speed.
  • the control device 101 controls the spin motor unit 4 to rotate the substrate W at high speed.
  • the control device 101 stops the blowing of superheated water steam from the blowing unit 8. More specifically, the blowing of superheated water steam is kept stopped from the rinsing process (step S47) through the drying process.
  • superheated steam is not supplied to the processing space during the drying process, so the humidity in the processing space can be reduced compared to when superheated steam is supplied. As a result, the substrate W can be dried efficiently.
  • the processing space can be filled with superheated water vapor, thereby raising the temperature of the substrate W and the members surrounding the substrate W.
  • the temperature of the rinsing liquid is raised by the residual heat, which makes it easier for the rinsing liquid to evaporate during the drying process, allowing the substrate W to be dried efficiently.
  • FIG. 16(a) is a bottom view of the nozzle 6 included in the first modified example of the substrate processing apparatus 100 of this embodiment, viewed from below.
  • FIG. 16(b) is a diagram showing the configuration of the fluid supply unit 600 included in the first modified example of the substrate processing apparatus 100 of this embodiment.
  • the nozzle 6 of the first modified example may be referred to as "nozzle 6a.”
  • the nozzle 6a has an additional blowing outlet 8a.
  • Superheated steam is blown out from the blowing outlet 8a.
  • the nozzle 6a functions as a blowing section that blows out superheated steam.
  • the blowing section that blows out superheated steam may be included in the fluid supply section 600.
  • superheated steam is supplied to the nozzle 6a from a superheated steam supply unit 800.
  • the superheated steam supplied to the nozzle 6a from the superheated steam supply unit 800 is blown out from the blowing port 8a described with reference to FIG. 16(a).
  • the blowing section 8 described with reference to FIG. 2 may or may not be omitted.
  • FIG. 17(a) is a bottom view of the nozzle 6 included in the second modified example of the substrate processing apparatus 100 of this embodiment, viewed from below.
  • FIG. 17(b) is a diagram showing the configuration of the fluid supply unit 600 included in the second modified example of the substrate processing apparatus 100 of this embodiment.
  • the nozzle 6 of the second modified example may be referred to as "nozzle 6b.”
  • the nozzle 6b has a first outlet 61b to a fifth outlet 65b.
  • the first outlet 61b to the fifth outlet 65b open on the bottom surface (tip) of the nozzle 6b.
  • the fifth outlet 65b is annular.
  • the fifth outlet 65b extends along the outer periphery of the nozzle 6b on the bottom surface (tip) of the nozzle 6b.
  • Sulfuric acid is discharged from the first outlet 61b.
  • Hydrogen peroxide solution is discharged from the second outlet 62b.
  • Ammonia water is discharged from the third outlet 63b. Pure water is discharged from the fourth outlet 64b.
  • An inert gas is discharged from the fifth outlet 65b. In the second modified example, the inert gas is nitrogen gas.
  • the fluid supply unit 600 includes a nozzle 6b, a first chemical liquid supply unit 610b, a second chemical liquid supply unit 620b, a third chemical liquid supply unit 630b, a pure water supply unit 640b, and a gas supply unit 650b.
  • the first chemical liquid supply unit 610b supplies sulfuric acid to the nozzle 6b.
  • the sulfuric acid supplied from the first chemical liquid supply unit 610b to the nozzle 6b is discharged from the first discharge port 61b described with reference to FIG. 17(a).
  • the first chemical liquid supply unit 610b has a first chemical liquid supply pipe 612b, a first chemical liquid opening/closing valve 614b, and a heater 616b.
  • a portion of the first chemical liquid supply pipe 612b is housed in the chamber 201 described with reference to FIG. 2.
  • the first chemical liquid opening/closing valve 614b and the heater 616b are housed in the fluid box 10B described with reference to FIG. 1.
  • the first chemical liquid supply pipe 612b supplies sulfuric acid to the nozzle 6b.
  • the first chemical liquid supply pipe 612b is a tubular member that circulates the sulfuric acid to the nozzle 6b.
  • the heater 616b is installed in the first chemical liquid supply pipe 612b. The heater 616b heats the sulfuric acid flowing through the first chemical liquid supply pipe 612b.
  • the first chemical liquid on-off valve 614b is disposed in the first chemical liquid supply pipe 612b.
  • the first chemical liquid on-off valve 614b can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the first chemical liquid on-off valve 614b.
  • the actuator of the first chemical liquid on-off valve 614b is, for example, a pneumatic actuator or an electric actuator.
  • the second chemical supply unit 620b supplies hydrogen peroxide to the nozzle 6b.
  • the hydrogen peroxide supplied from the second chemical supply unit 620b to the nozzle 6b is discharged from the second discharge port 62b described with reference to FIG. 17(a).
  • the second chemical liquid supply unit 620b has a second chemical liquid supply pipe 622b and a second chemical liquid opening/closing valve 624b.
  • a portion of the second chemical liquid supply pipe 622b is housed in the chamber 201 described with reference to FIG. 2.
  • the second chemical liquid opening/closing valve 624b is housed in the fluid box 10B described with reference to FIG. 1.
  • the second chemical supply pipe 622b supplies hydrogen peroxide to the nozzle 6b.
  • the second chemical supply pipe 622b is a tubular member that circulates hydrogen peroxide to the nozzle 6b.
  • the second chemical liquid on-off valve 624b is disposed in the second chemical liquid supply pipe 622b.
  • the second chemical liquid on-off valve 624b can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the second chemical liquid on-off valve 624b.
  • the actuator of the second chemical liquid on-off valve 624b is, for example, a pneumatic actuator or an electric actuator.
  • the control device 101 opens the first chemical liquid opening/closing valve 614b and the second chemical liquid opening/closing valve 624b when supplying SPM to the substrate W.
  • the sulfuric acid and hydrogen peroxide are mixed on the upper surface of the substrate W, and SPM is supplied to the upper surface of the substrate W.
  • the third chemical supply unit 630b supplies ammonia water to the nozzle 6b.
  • the ammonia water supplied from the third chemical supply unit 630b to the nozzle 6b is discharged from the third discharge port 63b described with reference to FIG. 17(a).
  • the third chemical liquid supply unit 630b has a third chemical liquid supply pipe 632b and a third chemical liquid on-off valve 634b.
  • a portion of the third chemical liquid supply pipe 632b is housed in the chamber 201 described with reference to FIG. 2.
  • the third chemical liquid on-off valve 634b is housed in the fluid box 10B described with reference to FIG. 1.
  • the third chemical liquid supply pipe 632b supplies ammonia water to the nozzle 6b.
  • the third chemical liquid opening and closing valve 634b is interposed in the third chemical liquid supply pipe 632b.
  • the third chemical liquid opening and closing valve 634b can be switched between an open state and a closed state.
  • ammonia water flows through the third chemical liquid supply pipe 632b and the ammonia water is supplied to the nozzle 6b.
  • the third chemical liquid opening and closing valve 634b is in the closed state, the supply of ammonia water to the nozzle 6b is stopped.
  • the control device 101 controls the opening and closing operation of the third chemical liquid opening and closing valve 634b.
  • the configuration of the third chemical liquid supply unit 630b is substantially the same as that of the second chemical liquid supply unit 620b, so a detailed description thereof will be omitted.
  • the pure water supply unit 640b supplies pure water to the nozzle 6b.
  • the pure water supplied from the pure water supply unit 640b to the nozzle 6b is discharged from the fourth discharge port 64b described with reference to FIG. 17(a).
  • the pure water supply unit 640b has a pure water supply pipe 642b and a pure water on-off valve 644b.
  • a portion of the pure water supply pipe 642b is housed in the chamber 201 described with reference to FIG. 2.
  • the pure water on-off valve 644b is housed in the fluid box 10B described with reference to FIG. 1.
  • the pure water supply pipe 642b supplies pure water to the nozzle 6b.
  • the pure water on-off valve 644b is interposed in the pure water supply pipe 642b.
  • the pure water on-off valve 644b can be switched between an open state and a closed state.
  • the control device 101 controls the opening and closing operation of the pure water on-off valve 644b.
  • the configuration of the pure water supply unit 640b is substantially the same as that of the second chemical liquid supply unit 620b, so a detailed description thereof will be omitted.
  • control device 101 When supplying SC1 to the substrate W, the control device 101 (control unit 102) opens the second chemical liquid opening/closing valve 624b, the third chemical liquid opening/closing valve 634b, and the pure water opening/closing valve 644b. As a result, the ammonia water, hydrogen peroxide solution, and pure water are mixed on the upper surface of the substrate W, and SC1 is supplied to the upper surface of the substrate W.
  • the rinse liquid is pure water.
  • the control device 101 controls the pure water opening and closing valve 644b during the rinse process.
  • the gas supply unit 650b supplies nitrogen gas to the nozzle 6b.
  • the nitrogen gas supplied from the gas supply unit 650b to the nozzle 6b is discharged from the fifth discharge port 65b described with reference to FIG. 17(a).
  • the gas supply unit 650b has a gas supply pipe 652b and a gas on-off valve 654b.
  • a portion of the gas supply pipe 652b is housed in the chamber 201 described with reference to FIG. 2.
  • the gas on-off valve 654b is housed in the fluid box 10B described with reference to FIG. 1.
  • the gas supply pipe 652b supplies nitrogen gas to the nozzle 6b.
  • the gas on-off valve 654b is interposed in the gas supply pipe 652b.
  • the gas on-off valve 654b can be switched between an open state and a closed state.
  • nitrogen gas flows through the gas supply pipe 652b and is supplied to the nozzle 6b.
  • the control device 101 controls the opening and closing operation of the gas on-off valve 654b.
  • the configuration of the gas supply unit 650b is substantially the same as that of the second chemical liquid supply unit 620b, so a detailed description thereof will be omitted.
  • FIG. 18(a) is a bottom view of the nozzle 6 included in the third modified example of the substrate processing apparatus 100 of this embodiment, viewed from below.
  • FIG. 18(b) is a diagram showing the configuration of the fluid supply unit 600 included in the third modified example of the substrate processing apparatus 100 of this embodiment.
  • the nozzle 6 of the third modified example may be referred to as "nozzle 6c.”
  • the nozzle 6c has a first outlet 61c, a second outlet 62c, a third outlet 63c, a fourth outlet 64c, a fifth outlet 65c, and an outlet 8a.
  • the first outlet 61c to the fifth outlet 65c of the nozzle 6c correspond to the first outlet 61b to the fifth outlet 65b of the nozzle 6b shown in FIG. 17(a).
  • the nozzle 6c has an additional outlet 8a.
  • Superheated steam is blown out from the outlet 8a. Therefore, the nozzle 6c functions as a blowing section that blows out superheated steam. In this way, the blowing section that blows out superheated steam may be included in the fluid supply section 600.
  • superheated steam is supplied to the nozzle 6c from the superheated steam supply unit 800.
  • the superheated steam supplied to the nozzle 6c from the superheated steam supply unit 800 is blown out from the blowing port 8a described with reference to FIG. 18(a).
  • blowing section 8 described with reference to FIG. 2 may or may not be omitted.
  • the spin chuck 3 is a clamping type chuck that brings multiple chuck members 31 into contact with the peripheral edge surface of the substrate W, but the method of holding the substrate W is not particularly limited as long as it can hold the substrate W horizontally.
  • the spin chuck 3 may be a vacuum type chuck or a Bernoulli type chuck.
  • control device 101 when hydrogen peroxide is supplied to the substrate W (step S44 in Figure 8), the control device 101 (controller 102) reduces the flow rate of superheated water steam blown out from the blower 8. However, when hydrogen peroxide is supplied to the substrate W (step S44 in Figure 8), the control device 101 (controller 102) may stop the blowing of superheated water steam from the blower 8. In this case, the control device 101 (controller 102) continues to stop the supply of superheated water steam to the processing space during the rinsing process (step S45 in Figure 8).
  • the substrate heating unit 5 heats the substrate W with a heater, but the material used by the substrate heating unit 5 to heat the substrate W is not particularly limited as long as it is a material capable of heating the substrate W.
  • the substrate heating unit 5 may heat the substrate W by laser irradiation or light irradiation.
  • the substrate processing apparatus 100 is provided with a substrate heating unit 5, but the substrate heating unit 5 may be omitted. In this case, pre-heating may be performed using superheated steam.
  • paddle processing is performed, but paddle processing may be omitted.
  • the substrate processing apparatus 100 may also supply superheated steam from the blowing section 8 to the processing space when cleaning the inside of the processing space. As a result, after cleaning the inside of the processing space, it becomes easier to dry the processing space forming section 70 and the members placed within the processing space.
  • an inert gas such as nitrogen gas is supplied to the processing space to dry the processing space forming part 70 and the members placed within the processing space.
  • an inert gas such as nitrogen gas
  • a large amount of pure water is used when cleaning the inside of the processing space. Therefore, the inside of the processing space after cleaning is difficult to dry.
  • by supplying superheated steam from the blowing part 8 to the processing space when cleaning the inside of the processing space it is possible to raise the temperature of the processing space forming part 70 and the members placed within the processing space.
  • the cleaning of the inside of the processing space may be performed, for example, every time the substrate processing unit 2 processes a predetermined number of substrates W (e.g., 24 substrates). Alternatively, the cleaning of the inside of the processing space may be performed every time a predetermined time has elapsed.
  • the present invention is useful for substrate processing devices and has industrial applicability.
  • Substrate processing unit 3 Spin chuck 4: Spin motor unit 6: Nozzle 6a: Nozzle 6b: Nozzle 6c: Nozzle 8: Blowing unit 8a: Blowing outlet 70: Processing space forming unit 71: Liquid receiving unit 72: Blocking member 81: First blowing unit 82: Second blowing unit 100: Substrate processing apparatus 101: Control device 102: Control unit 103: Memory unit 201: Chamber 600: Fluid supply unit 800: Superheated steam supply unit W: Substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

Dans la présente invention, un dispositif de traitement (100) de substrat comprend une chambre (201) ; une unité de maintien (3) de substrat, une partie de formation (70) d'espace de traitement, une unité de rotation (4) de substrat ; une unité d'alimentation en liquide de traitement (600), et une partie de soufflage de vapeur surchauffée (8). La chambre (201) loge un substrat (W). L'unité de maintien (3) de substrat maintient le substrat (W) à l'intérieur de la chambre (201). La partie de formation (70) d'espace de traitement comprend un élément en vis-à-vis (72). L'élément en vis-à-vis (72) fait face au substrat (W) maintenu par l'unité de maintien (3) de substrat. La partie de formation (70) d'espace de traitement forme un espace de traitement dans lequel le substrat (W) est traité. L'unité de rotation (4) de substrat amène le substrat (W) maintenu par l'unité de maintien (3) de substrat à tourner. L'unité d'alimentation en liquide de traitement (600) apporte un premier mélange liquide (SPM) dans lequel de l'acide sulfurique et une solution de peroxyde d'hydrogène sont mélangés au substrat (W) amené à tourner par l'unité de rotation (4) de substrat. La partie de soufflage de vapeur surchauffée (8) souffle de la vapeur surchauffée à l'intérieur de l'espace de traitement.
PCT/JP2023/038501 2022-10-28 2023-10-25 Dispositif de traitement de substrat et procédé de traitement de substrat WO2024090473A1 (fr)

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Publication number Priority date Publication date Assignee Title
JP2008004878A (ja) * 2006-06-26 2008-01-10 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010087419A (ja) * 2008-10-02 2010-04-15 Shibaura Mechatronics Corp レジスト剥離装置及び剥離方法
JP2015050351A (ja) * 2013-09-02 2015-03-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015056447A (ja) * 2013-09-10 2015-03-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015115409A (ja) * 2013-12-10 2015-06-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2018198885A1 (fr) * 2017-04-28 2018-11-01 株式会社Ｓｃｒｅｅｎホールディングス Procédé et dispositif de traitement de substrat
JP2020088208A (ja) * 2018-11-27 2020-06-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2022052835A (ja) * 2020-09-24 2022-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板位置調整方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008004878A (ja) * 2006-06-26 2008-01-10 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2010087419A (ja) * 2008-10-02 2010-04-15 Shibaura Mechatronics Corp レジスト剥離装置及び剥離方法
JP2015050351A (ja) * 2013-09-02 2015-03-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015056447A (ja) * 2013-09-10 2015-03-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2015115409A (ja) * 2013-12-10 2015-06-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
WO2018198885A1 (fr) * 2017-04-28 2018-11-01 株式会社Ｓｃｒｅｅｎホールディングス Procédé et dispositif de traitement de substrat
JP2020088208A (ja) * 2018-11-27 2020-06-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2022052835A (ja) * 2020-09-24 2022-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板位置調整方法

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