WO2024077955A1 - Filtre à ondes acoustiques de surface ayant de multiples points zéro de transmission, et circuit de traitement de signal - Google Patents

Filtre à ondes acoustiques de surface ayant de multiples points zéro de transmission, et circuit de traitement de signal Download PDF

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Publication number
WO2024077955A1
WO2024077955A1 PCT/CN2023/095046 CN2023095046W WO2024077955A1 WO 2024077955 A1 WO2024077955 A1 WO 2024077955A1 CN 2023095046 W CN2023095046 W CN 2023095046W WO 2024077955 A1 WO2024077955 A1 WO 2024077955A1
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Prior art keywords
resonator
surface acoustic
resonators
plane propagation
acoustic wave
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PCT/CN2023/095046
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English (en)
Chinese (zh)
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郑鹏程
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上海馨欧集成微电有限公司
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Publication of WO2024077955A1 publication Critical patent/WO2024077955A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • the invention relates to the technical field of device preparation, and in particular to a surface acoustic wave filter with multiple transmission zeros and a signal processing circuit.
  • the electromechanical coupling coefficient of the existing surface acoustic wave filter composed of a resonator based on a single in-plane propagation direction is difficult to adjust over a large range.
  • the filter with multiple transmission zeros is formed by cascading inductance elements and capacitance elements.
  • the inductance elements and capacitance elements cause the device to be large in size and have serious parasitic effects, which affects the high performance of the device.
  • an embodiment of the present application provides a surface acoustic wave filter with multiple transmission zeros and a signal processing circuit.
  • a surface acoustic wave filter with multiple transmission zeros comprising:
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators in the parallel resonator and the series resonator are different, so that the anti-resonance point of the series resonator and the resonance point of the parallel resonator form a plurality of zero positions; the in-plane propagation direction is the normal direction of the interdigital electrodes in the resonator;
  • the acoustic modes excited by the parallel resonator and the series resonator are the same.
  • the parallel resonator there are at least two resonators whose surface acoustic waves have different in-plane propagation directions;
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators are different.
  • the parallel resonator there are at least two resonators whose surface acoustic waves have different in-plane propagation directions;
  • the in-plane propagation direction of the surface acoustic wave of each resonator in the series resonator is the same.
  • the in-plane propagation direction of the surface acoustic wave of each resonator in the parallel resonator is the same;
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators are different.
  • the in-plane propagation direction of the surface acoustic wave of at least one resonator in the parallel resonator is the same as the in-plane propagation direction of the surface acoustic wave of the resonator in the series resonator.
  • the resonator includes a supporting substrate, a piezoelectric film disposed on the supporting substrate, and interdigital electrodes disposed on the piezoelectric film.
  • the resonator includes a dielectric layer disposed on a supporting substrate;
  • the ratio of the thickness of the dielectric layer to the center distance between the interdigital electrodes is less than a preset threshold; the preset threshold is 4.
  • the material of the support substrate includes silicon, quartz, silicon carbide, sapphire and diamond;
  • the materials of the piezoelectric film are lithium niobate and lithium tantalate.
  • the material of the dielectric layer includes silicon oxide, silicon nitride and aluminum oxide.
  • a signal processing circuit includes the above-mentioned surface acoustic wave filter with multiple transmission zeros.
  • the embodiment of the present application provides a surface acoustic wave filter with multiple transmission zero points and a signal processing circuit, wherein the surface acoustic wave filter includes a parallel resonator and a series resonator; the parallel resonator and the series resonator are cascaded in sequence.
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators in the parallel resonator and the series resonator are different, so that the anti-resonance point of the series resonator and the resonance point of the parallel resonator constitute multiple zero positions; the in-plane propagation direction is the normal direction of the interdigitated electrodes in the resonator.
  • the difference in the electromechanical coupling coefficients of the resonators can be adjusted, and then the spacing between the zero positions of the filter can be expanded to realize a multi-transmission zero filter.
  • FIG1 is a schematic diagram showing the response of an existing double-zero surface acoustic wave filter
  • FIG2 is a schematic diagram showing the response of another conventional double-zero surface acoustic wave filter
  • FIG. 3 is a schematic diagram of a curve showing a change in operating frequency and electromechanical coupling coefficient of a resonator as a function of device wavelength provided by an embodiment of the present application;
  • FIG4 is a curve showing a change in the electromechanical coupling coefficient of a resonator according to an embodiment of the present application as a function of the in-plane propagation direction of the device;
  • FIG5 is a schematic top view of a surface acoustic wave filter with multiple transmission zeros provided in an embodiment of the present application
  • FIG6 is a schematic diagram of a surface acoustic wave filter with multiple transmission zeros provided in an embodiment of the present application.
  • FIG7 is a schematic top view of a resonator provided in an embodiment of the present application.
  • FIG8 is a cross-sectional schematic diagram of a resonator provided in an embodiment of the present application.
  • FIG9 is a cross-sectional schematic diagram of another resonator provided in an embodiment of the present application.
  • FIG10 is a simulation curve diagram of a resonator and a filter provided in an embodiment of the present application.
  • FIG11 is a schematic diagram of a signal processing circuit provided in an embodiment of the present application.
  • FIG. 12 is a schematic diagram of another signal processing circuit provided in an embodiment of the present application.
  • the “embodiment” referred to herein refers to a specific feature, structure or characteristic that may be included in at least one implementation of the present application.
  • the terms “first”, “second”, etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the terms “first”, “second”, etc. are defined as The feature of a can include one or more of these features explicitly or implicitly.
  • the terms “first”, “second”, etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.
  • the surface acoustic wave filter can be composed of multiple surface acoustic wave resonators cascaded in series and parallel arms.
  • the resonant frequency of the series resonator is higher than the resonant frequency of the parallel resonator, and the wavelength corresponding to the series resonator is smaller than the wavelength corresponding to the parallel resonator.
  • the resonant frequency fr of the series resonator needs to be basically aligned with the anti-resonant frequency fa of the parallel resonator to achieve the response of the bandpass filter. Therefore, the relative bandwidth of the filter is positively correlated with the electromechanical coupling coefficient of the resonator. The larger the electromechanical coupling coefficient of the resonator, the larger the relative bandwidth of the filter that can be achieved.
  • 4 resonators are connected in series and 3 resonators are connected in parallel.
  • Each resonator can be composed of a 150nm aluminum electrode, a 600nm X-cut lithium niobate film, a 400nm silicon oxide dielectric layer and a silicon substrate.
  • the excited acoustic wave mode can be a horizontal shear wave SH mode.
  • the zero point position of the surface acoustic wave filter i.e., 2.28GHz and 2.95GHz, is determined by the antiresonance point of the series resonator and the resonance point position of the parallel resonator.
  • the out-of-band suppression of the surface acoustic wave filter is as high as 50dB, the distance between the upper cutoff frequency and the left zero point, and the lower cutoff frequency and the right zero point of the passband is too large, that is, the rectangularity is not high, which will lead to insufficient isolation of adjacent frequency bands in the design of the RF module.
  • FIG3 is a schematic diagram of a curve showing the change of the operating frequency and electromechanical coupling coefficient of a resonator provided by an embodiment of the present application with the wavelength of the device.
  • the operating frequency of the device is inversely proportional to the wavelength
  • the electromechanical coupling coefficient k t 2 is almost unchanged within the range of wavelength ⁇ [1.2 ⁇ m, 1.6 ⁇ m], and the maximum electromechanical coupling coefficient and the minimum electromechanical coupling coefficient differ by only 1.5%. Therefore, the resonator based on the same in-plane propagation direction is not flexible enough in adjusting the electromechanical coupling coefficient and is difficult to use to construct a multi-zero filter.
  • FIG4 is a curve showing the variation of the electromechanical coupling coefficient of a resonator provided by an embodiment of the present application with the in-plane propagation direction of the device.
  • the electromechanical coupling coefficient of the resonator is as high as 37% at 172°, and the more it deviates from 172°, the lower the electromechanical coupling coefficient is, showing a phenomenon of large changes. Therefore, a surface acoustic wave filter can be formed by using a plurality of resonators with different in-plane propagation directions to realize a multi-zero surface acoustic wave filter.
  • different in-plane propagation directions can achieve the same electromechanical coupling coefficient. For example, an in-plane propagation direction of 20° and 147° can both achieve an electromechanical coupling coefficient of 17%. Therefore, the angle adopted in the device design can be flexibly selected according to the layout and spurious mode suppression conditions.
  • FIG5 is a top view schematic diagram of a surface acoustic wave filter with multiple transmission zeros provided in an embodiment of the present application
  • FIG6 is a schematic diagram of a surface acoustic wave filter with multiple transmission zeros provided in an embodiment of the present application.
  • This specification provides a component structure as shown in the embodiments or drawings, but based on conventional or non-creative labor, more or fewer modules or components may be included.
  • the component structure listed in the embodiments is only one of many component structures and does not represent the only component structure. In actual implementation, it can be implemented according to the component structure shown in the embodiments or drawings.
  • the surface acoustic wave filter with multiple transmission zeros may include a parallel resonator and a series resonator, and the parallel resonator and the series resonator may be cascaded in sequence.
  • the in-plane propagation direction can be the normal direction of the interdigitated electrodes in the resonator, and the acoustic modes excited by the parallel resonator and the series resonator are the same.
  • the multi-transmission zero surface acoustic wave filter may include 7 resonators, wherein 3 resonators are connected in parallel to form a parallel resonator, and 4 resonators are connected in series to form a series resonator. At least two of the 7 resonators have different in-plane propagation directions of the surface acoustic waves.
  • the 7 resonators can be numbered 1-7 from left to right, wherein the series resonators are numbered 1, 3, 5, 7 from left to right, and the parallel resonators are numbered 2, 4, 6 from left to right.
  • At least two resonators in a parallel resonator may have surface acoustic waves with different in-plane propagation directions
  • at least two resonators in a series resonator may have surface acoustic waves with different in-plane propagation directions.
  • At least two of the series resonators 1, 3, 5, and 7 may have different in-plane propagation directions of surface acoustic waves.
  • At least two of the parallel resonators 2, 4, and 6 may have different in-plane propagation directions of surface acoustic waves.
  • the in-plane propagation directions of the surface acoustic waves of resonator 1 and resonator 3 are different, while the in-plane propagation directions of the surface acoustic waves of resonator 3, resonator 5, and resonator 7 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 3 and resonator 5 are different, while the in-plane propagation directions of the surface acoustic waves of resonator 1, resonator 5, and resonator 7 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 1, resonator 3, resonator 5, and resonator 7 are all different.
  • the in-plane propagation directions of the surface acoustic waves of resonator 2 and resonator 4 are different, while the in-plane propagation directions of the surface acoustic waves of resonator 4 and resonator 6 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 4 and resonator 6 are different, while the in-plane propagation directions of the surface acoustic waves of resonator 2 and resonator 4 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 2, resonator 4, and resonator 6 are all different.
  • the in-plane propagation directions of the surface acoustic waves of each resonator in the series resonator can be the same.
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators in the series resonators 1, 3, 5, and 7 may be different.
  • the in-plane propagation directions of the surface acoustic waves of each resonator in the parallel resonators 2, 4, and 6 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 1 and resonator 3 are different, and the in-plane propagation directions of the surface acoustic waves of resonator 3, resonator 5, and resonator 7 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 3 and resonator 5 are different, and the in-plane propagation directions of the surface acoustic waves of resonator 1, resonator 5, and resonator 7 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 1, resonator 3, resonator 5, and resonator 7 are all different.
  • the in-plane propagation directions of the surface acoustic waves of resonator 2, resonator 4, and resonator 6 are all the same.
  • the in-plane propagation direction of the surface acoustic wave of each resonator in the parallel resonator may be the same, and the in-plane propagation direction of the surface acoustic wave of at least two resonators in the series resonator may be different.
  • the in-plane propagation direction of the surface acoustic wave of each resonator in the series resonators 1, 3, 5, and 7 is the same.
  • at least two resonators may have different in-plane propagation directions of the surface acoustic wave.
  • the in-plane propagation directions of the surface acoustic waves of resonator 1, resonator 3, resonator 5, and resonator 7 are all the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 2 and resonator 4 are different, and the in-plane propagation directions of the surface acoustic waves of resonator 4 and resonator 6 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 4 and resonator 6 are different, and the in-plane propagation directions of the surface acoustic waves of resonator 2 and resonator 4 are the same.
  • the in-plane propagation directions of the surface acoustic waves of resonator 2, resonator 4, and resonator 6 are all different.
  • a symmetrical design may be adopted, that is, the in-plane propagation direction of the surface acoustic waves of resonator 1 and resonator 7 is the same, the in-plane propagation direction of the surface acoustic waves of resonator 2 and resonator 6 is the same, and the in-plane propagation direction of the surface acoustic waves of resonator 3 and resonator 5 is the same.
  • Figure 7 is a schematic top view of a resonator provided in an embodiment of the present application
  • Figure 8 is a schematic cross-sectional view of a resonator provided in an embodiment of the present application.
  • the resonator may include a supporting substrate, a piezoelectric film disposed on the supporting substrate, and an electrode array disposed on the piezoelectric film.
  • the electrode array may include a parallel arranged interdigitated electrode array and a reflective gate electrode array.
  • the normal direction of the interdigitated electrode array can be defined as the in-plane propagation direction ⁇ of the surface acoustic wave, and the electrode array can be arranged on the piezoelectric film at an angle ⁇ to the ⁇ direction.
  • the tilt angle ⁇ can be in the range [-10°, 10°]. Based on a surface acoustic wave filter with a multi-layer heterogeneous substrate structure, due to the localized effect of the acoustic field energy of the high acoustic velocity substrate, the resonator along any in-plane propagation direction can have an extremely high Q value.
  • the support substrate may be a high-acoustic-velocity substrate having an acoustic velocity higher than the acoustic velocity of the target acoustic wave mode in the piezoelectric film, for confining the acoustic field energy in the piezoelectric film acoustic waveguide.
  • the material of the support substrate may be any one of silicon Si, quartz, silicon carbide SiC, sapphire, and diamond.
  • the material of the piezoelectric film may be lithium niobate LiNbO 3 or Lithium tantalate LiTaO 3.
  • the piezoelectric film can only be cut into two tangent types, X and Z, and the common surface acoustic wave resonator based on YX- ⁇ cut LiNbO 3 or LiTaO 3 will have strong stray modes after changing the in-plane direction and cannot be used normally.
  • the thickness of the piezoelectric film can be in the range [1.5 ⁇ m, 150nm].
  • FIG9 is a cross-sectional schematic diagram of another resonator provided in an embodiment of the present application, wherein the resonator may include a supporting substrate, a dielectric layer disposed on the supporting substrate, a piezoelectric film disposed on the dielectric layer, and an electrode array disposed on the piezoelectric film.
  • the electrode array may include a parallel arranged interdigitated electrode array and a reflective gate electrode array.
  • the normal direction of the interdigitated electrode array may be defined as the in-plane propagation direction ⁇ of the surface acoustic wave, and the electrode array may be arranged on the piezoelectric film at an angle ⁇ to the ⁇ direction.
  • the tilt angle ⁇ may be within the interval [-10°, 10°].
  • the ratio of the thickness of the dielectric layer to the center spacing of the interdigital electrodes in the interdigital electrode array may be less than a preset threshold.
  • the preset threshold may be 4. That is, the maximum thickness of the dielectric layer does not exceed 2 times the wavelength.
  • the support substrate may be a high-acoustic-velocity substrate having an acoustic velocity higher than the acoustic velocity of the target acoustic wave mode in the piezoelectric film, for confining the acoustic field energy in the piezoelectric film acoustic waveguide.
  • the material of the support substrate may be any one of silicon Si, quartz, silicon carbide SiC, sapphire, and diamond.
  • the material of the piezoelectric film may be lithium niobate LiNbO 3 or lithium tantalate LiTaO 3.
  • the piezoelectric film can only be cut into two tangent types, X and Z, and the common surface acoustic wave resonator based on YX- ⁇ cut LiNbO 3 or LiTaO 3 will have a strong stray mode after changing the in-plane direction and cannot be used normally.
  • the thickness of the piezoelectric film may be in the range [1.5 ⁇ m, 150nm].
  • the material of the dielectric layer may be a high resistivity material such as silicon oxide SiO x , silicon nitride SiN x , or aluminum oxide Al 2 O 3 .
  • the resonator may also include a supporting substrate, a piezoelectric film, a dielectric layer disposed on the piezoelectric film, and an electrode array disposed on the dielectric layer.
  • the resonator may also include a supporting substrate, a first dielectric layer disposed on the supporting substrate, a piezoelectric film disposed on the first dielectric layer, a second dielectric layer disposed on the piezoelectric film, and an electrode array disposed on the piezoelectric film.
  • Figure 10 is a simulation curve diagram of a resonator and filter provided in an embodiment of the present application.
  • the passband of the filter is regarded as a range of -1 to 1, so all zero positions are between 1.1 and 4.0.
  • the surface acoustic wave filter based on the multiple transmission zeros shown in Figure 5 can have 4 different electromechanical coupling coefficients, generating transmission zeros at 2.91GHz, 2.78GHz, 2.43GHz, and 2.26GHz respectively.
  • the surface acoustic wave filter can maintain a high rectangularity and achieve up to 60dB of out-of-band suppression.
  • the electromechanical coupling coefficient difference of the resonators can be adjusted by setting resonators with different in-plane propagation directions, and then the spacing of the zero positions of the filter can be expanded to realize a multiple transmission zero filter.
  • the electromechanical coupling coefficient of the resonator can be further adjusted, and the design flexibility of the filter can be improved.
  • FIG. 11 is a schematic diagram of a signal processing circuit provided in an embodiment of the present application
  • FIG. 12 is a schematic diagram of another signal processing circuit provided in an embodiment of the present application.
  • This specification provides a component structure as shown in the embodiments or drawings, but based on conventional or non-creative labor, more or fewer modules or components may be included.
  • the component structure listed in the embodiment is only one way among many component structures, and does not represent the only component structure. In actual implementation, it can be executed according to the component structure shown in the embodiments or drawings.
  • the signal processing circuit may include a plurality of surface acoustic wave filters with multiple transmission zeros, and each surface acoustic wave filter with multiple transmission zeros may include a parallel resonator and a series resonator, and the parallel resonator and the series resonator may be cascaded.
  • the in-plane propagation directions of the surface acoustic waves of at least two resonators in the parallel resonator and the series resonator are different, so that the anti-resonance point of the series resonator and the resonance point of the parallel resonator constitute multiple zero positions.
  • the in-plane propagation direction may be the normal direction of the interdigitated electrodes in the resonator.
  • the surface acoustic wave filter with multiple transmission zeros can be used in radio frequency signal processing circuits such as duplexers and multiplexers.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

La présente invention se rapporte au domaine technique de la préparation de dispositifs, et concerne un filtre à ondes acoustiques de surface ayant de multiples points zéro de transmission, et un circuit de traitement de signal. Le filtre à ondes acoustiques de surface comprend des résonateurs parallèles et des résonateurs en série ; et les résonateurs parallèles et les résonateurs en série sont successivement mis en cascade. Parmi les résonateurs parallèles et les résonateurs en série, les directions de propagation dans le plan des ondes de surface d'au moins deux résonateurs sont différentes, amenant des points anti-résonance des résonateurs en série et des points de résonance des résonateurs parallèles à former de multiples positions de point zéro ; la direction de propagation dans le plan est la direction de la normale d'électrodes interdigitées dans un résonateur ; et les modes acoustiques excités par les résonateurs parallèles et les résonateurs en série sont identiques. Sur la base des modes de réalisation de la présente demande, la fourniture de résonateurs ayant différentes directions de propagation dans le plan permet d'ajuster des différences de coefficient de couplage électromécanique de résonateur, permettant en outre d'augmenter les distances entre les positions de point zéro du filtre, et d'obtenir un filtre ayant de multiples points zéro de transmission.
PCT/CN2023/095046 2022-10-11 2023-05-18 Filtre à ondes acoustiques de surface ayant de multiples points zéro de transmission, et circuit de traitement de signal WO2024077955A1 (fr)

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CN202211244240.7A CN115913167A (zh) 2022-10-11 2022-10-11 一种多传输零点的声表面波滤波器及信号处理电路

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CN113708739A (zh) * 2021-08-27 2021-11-26 中国科学院上海微系统与信息技术研究所 一种声波滤波器
CN115001438A (zh) * 2022-06-21 2022-09-02 中国科学院上海微系统与信息技术研究所 一种纵向泄漏声表面波谐振器的结构及滤波器
CN115664370A (zh) * 2022-10-11 2023-01-31 中国科学院上海微系统与信息技术研究所 一种多传输零点的板波滤波器及信号处理电路
CN115913167A (zh) * 2022-10-11 2023-04-04 上海馨欧集成微电有限公司 一种多传输零点的声表面波滤波器及信号处理电路

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