WO2024070966A1 - 信号伝達装置 - Google Patents

信号伝達装置 Download PDF

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Publication number
WO2024070966A1
WO2024070966A1 PCT/JP2023/034561 JP2023034561W WO2024070966A1 WO 2024070966 A1 WO2024070966 A1 WO 2024070966A1 JP 2023034561 W JP2023034561 W JP 2023034561W WO 2024070966 A1 WO2024070966 A1 WO 2024070966A1
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WO
WIPO (PCT)
Prior art keywords
chip
die pad
terminal
coil
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/034561
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English (en)
French (fr)
Japanese (ja)
Inventor
遼平 梅野
太郎 西岡
隆宏 根来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024549330A priority Critical patent/JPWO2024070966A1/ja
Publication of WO2024070966A1 publication Critical patent/WO2024070966A1/ja
Priority to US19/091,349 priority patent/US20250253272A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias

Definitions

  • This disclosure relates to a signal transmission device.
  • a signal transmission device that includes a first die pad, a second die pad arranged at a distance from the first die pad, a first chip and a transformer chip mounted on the first die pad, a second chip mounted on the second die pad, and a sealing resin that seals the die pads and chips (see, for example, Patent Document 1).
  • the first chip and the transformer chip are electrically connected by a wire
  • the transformer chip and the second chip are electrically connected by another wire.
  • a signal transmission device includes a first chip including an isolation transformer, a second chip receiving a signal from the first chip and/or transmitting a signal to the first chip, a third chip receiving a signal from the first chip and/or transmitting a signal to the first chip, a first die pad on which the first chip is mounted, the second die pad on which the second chip is mounted, the second die pad on which the second chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip is mounted, the third die pad on which the third chip
  • the signal transmission device described above allows the wire height of the inter-chip wires to be inspected with greater precision.
  • FIG. 1 is a perspective view of a signal transmission device according to a first embodiment.
  • FIG. 2 is a rear view of the signal transmission device of FIG.
  • FIG. 3 is a schematic plan view showing the internal configuration of the signal transmission device of FIG.
  • FIG. 4 is a schematic cross-sectional view of the signal transmission device taken along line F4-F4 in FIG.
  • FIG. 5 is an enlarged view of the first die pad and its periphery in FIG.
  • FIG. 6 is a schematic cross-sectional view of a first internal terminal portion of the first terminal.
  • FIG. 7 is an enlarged view of the second die pad and the third die pad and their surroundings in FIG.
  • FIG. 8 is a schematic cross-sectional view of a second internal terminal portion of the second terminal.
  • FIG. 1 is a perspective view of a signal transmission device according to a first embodiment.
  • FIG. 2 is a rear view of the signal transmission device of FIG.
  • FIG. 3 is a schematic plan view showing the internal configuration of the signal transmission
  • FIG. 9 is a circuit diagram of the signal transmission device of the first embodiment.
  • FIG. 10 is a schematic plan view illustrating an example of the internal structure of the first chip in the signal transmission device according to the first embodiment.
  • FIG. 11 is an enlarged plan view of the transformer region of FIG.
  • FIG. 12 is a schematic plan view showing an example of the internal structure of the first chip at a position different from that in FIG. 10 in the thickness direction of the first chip.
  • FIG. 13 is an enlarged plan view of the transformer region of FIG.
  • FIG. 14 is a cross-sectional view showing the cross-sectional structure of the first chip taken along line F14-F14 in FIG.
  • FIG. 15 is an enlarged view of a part of the first chip in FIG. FIG.
  • FIG. 16 is an enlarged view of the conductor of the first surface side coil in the first chip of FIG.
  • FIG. 17 is an enlarged view of the conductor of the first back side coil in the first chip in FIG.
  • FIG. 18 is a cross-sectional view showing a cross-sectional structure of a part of the circuit region of the first chip.
  • FIG. 19 is an enlarged view of the first via and its periphery in FIG.
  • FIG. 20 is an enlarged plan view of the first die pad and its periphery in the signal transmission device of the second embodiment.
  • FIG. 21 is an enlarged plan view of the first die pad and its periphery in the signal transmission device of the third embodiment.
  • 22 is an enlarged perspective view of the second bond portion of the wire for the first terminal in FIG. 21 and its surroundings.
  • FIG. 23 is a schematic plan view showing the internal configuration of a signal transmission device according to the fourth embodiment.
  • FIG. 24 is a schematic cross-sectional view of a first chip and a first die pad in a signal transmission device according to the fifth embodiment.
  • FIG. 25 is a schematic cross-sectional view of the first chip and the first die pad taken in a direction different from that of FIG.
  • FIG. 26 is a schematic cross-sectional view of the second chip and the second die pad.
  • FIG. 27 is a schematic cross-sectional view of the second chip and the second die pad taken in a direction different from that of FIG.
  • FIG. 28 is a schematic cross-sectional view of the third chip and the third die pad.
  • FIG. 29 is a schematic cross-sectional view of the third chip and the third die pad taken in a direction different from that of FIG. 30A to 30C are cross-sectional views each showing a schematic example of a manufacturing process for the signal transmission device according to the fifth embodiment.
  • FIG. 31 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 30.
  • FIG. 32 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 31 .
  • FIG. 33 is a cross-sectional view illustrating an example of a manufacturing process for the signal transmission device following FIG. 32.
  • FIG. 34 is a cross-sectional view illustrating an example of a cross-sectional structure of the first transformer of the first chip and its periphery in the signal transmission device of the sixth embodiment.
  • FIG. 35 is an enlarged cross-sectional view of a part of the first transformer and its periphery in FIG.
  • FIG. 36 is a cross-sectional view illustrating an example of a manufacturing process for the signal transmission device of the sixth embodiment.
  • FIG. 37 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG.
  • FIG. 38 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device following FIG. 37.
  • FIG. 39 is a cross-sectional view showing the cross-sectional structure of the first transformer of the first chip and part of its periphery in the signal transmission device of the seventh embodiment.
  • FIG. 40 is an enlarged cross-sectional view of a portion of the first surface side coil of the first transformer of the first chip and its periphery in the signal transmission device of the eighth embodiment.
  • FIG. 41 is a cross-sectional view illustrating an example of a manufacturing process for the signal transmission device of the eighth embodiment.
  • FIG. 42 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 41.
  • FIG. 43 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. FIG.
  • FIG. 44 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device following FIG. 43.
  • FIG. 45 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 44.
  • FIG. 46 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 45.
  • FIG. 47 is an enlarged cross-sectional view of a portion of the first front surface coil of the first transformer of the first chip and its periphery in the signal transmission device of the ninth embodiment.
  • FIG. 48 is a cross-sectional view illustrating an example of a manufacturing process for the signal transmission device of the ninth embodiment.
  • FIG. 49 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 50 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 49.
  • FIG. 51 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device subsequent to FIG. 50.
  • FIG. 52 is a cross-sectional view showing a schematic example of a manufacturing process for the signal transmission device following FIG. 51.
  • FIG. 53 is a schematic plan view showing an example of the internal structure of the first chip in a signal transmission device according to a modified example.
  • FIG. 53 is a schematic plan view showing an example of the internal structure of the first chip in a signal transmission device according to a modified example.
  • FIG. 54 is a schematic plan view showing an example of the internal structure of the first chip at a position different from that in FIG. 53 in the thickness direction of the first chip.
  • FIG. 55 is an enlarged plan view of the first die pad and its periphery in a signal transmission device according to a modified example.
  • FIG. 56 is an enlarged plan view of the second die pad, the third die pad and their surroundings in a signal transmission device according to a modified example.
  • FIG. 1 A signal transmission device 10 of a first embodiment will be described with reference to Figures 1 to 19.
  • Figures 1 and 2 show the external structure of the signal transmission device 10.
  • Figures 3 to 8 show the internal structure of the signal transmission device 10.
  • Figure 9 shows the circuit configuration of the signal transmission device 10.
  • Figures 10 to 19 show the internal structure of a first chip 60 (described later) of the signal transmission device 10.
  • FIG. 1 shows a perspective view of the front side of a signal transmission device 10.
  • Fig. 2 shows a plan view of the back side of the signal transmission device 10.
  • the package structure of the signal transmission device 10 is a small outline non-leaded package (SON). Note that the package structure of the signal transmission device 10 can be changed as desired, and may be, for example, a quad for non-lead package (QFN).
  • QFN quad for non-lead package
  • the signal transmission device 10 includes a sealing resin 90, and a plurality of first terminals 11-17 (seven in the first embodiment), a plurality of second terminals 41-43 (three in the first embodiment), and a plurality of third terminals 44-46 (three in the first embodiment) sealed in the sealing resin 90. As shown in FIG. 2, the plurality of first terminals 11-17, the plurality of second terminals 41-43, and the plurality of third terminals 44-46 are exposed from a sealing back surface 92 of the sealing resin 90, which will be described later.
  • the sealing resin 90 is formed in a rectangular flat plate shape.
  • the thickness direction of the sealing resin 90 is the "Z direction", and two mutually perpendicular directions among the directions perpendicular to the Z direction are the "X direction” and the "Y direction”.
  • the upper side of the Z direction is the "+Z direction", and the lower side is the "-Z direction”.
  • the front side of the X direction is the "+X direction”
  • the rear side is the "-X direction”.
  • the right side of the Y direction is the "+Y direction”
  • the left side is the "-Y direction”.
  • plan view refers to viewing the signal transmission device 10 from the thickness direction of the sealing resin 90. Unless otherwise specified, plan view refers to viewing the signal transmission device 10 from the +Z direction.
  • the shape of the sealing resin 90 in plan view is, for example, approximately square.
  • the size (thickness) of the sealing resin 90 in the Z direction is 1/3 or less of the size of the sealing resin 90 in the X direction and the Y direction.
  • the size (thickness) of the sealing resin 90 in the Z direction is 1/4 or less of the size of the sealing resin 90 in the X direction and the Y direction.
  • the size (thickness) of the sealing resin 90 in the Z direction is 1/5 or more of the size of the sealing resin 90 in the X direction and the Y direction.
  • the size of the sealing resin 90 in the X direction is about 5 mm, and the size of the sealing resin 90 in the Y direction is about 5 mm.
  • the size (thickness) of the sealing resin 90 in the Z direction is a maximum of 1.06 mm.
  • the sealing resin 90 has a sealing surface 91 and a sealing back surface 92 that face opposite each other in the Z direction.
  • the sealing surface 91 faces the +Z direction
  • the sealing back surface 92 faces the -Z direction.
  • the Z direction corresponds to the "third direction perpendicular to both the first direction and the second direction.”
  • the sealing resin 90 has first to fourth sealing side surfaces 93 to 96 that connect the sealing surface 91 and the sealing back surface 92.
  • the first sealing side surface 93 and the second sealing side surface 94 form both end surfaces of the sealing resin 90 in the X direction
  • the third sealing side surface 95 and the fourth sealing side surface 96 form both end surfaces of the sealing resin 90 in the Y direction.
  • the first sealing side surface 93 is a surface that faces the +X direction
  • the second sealing side surface 94 is a surface that faces the -X direction.
  • the third sealing side surface 95 is a surface that faces the +Y direction
  • the fourth sealing side surface 96 is a surface that faces the -Y direction.
  • a recess 91A is formed in the sealing surface 91.
  • the recess 91A is circular in a plan view.
  • the recess 91A is recessed in a curved concave shape from the sealing surface 91.
  • the recess 91A is formed in a portion of the sealing surface 91 that is closer to the first sealing side surface 93 and the fourth sealing side surface 96.
  • the recess 91A serves as a marker for distinguishing the first terminals 11-17 from the second terminals 41-43 and the third terminals 44-46.
  • the sealing resin 90 is formed, for example, by transfer molding.
  • the third sealing side 95 is provided with a trace (not shown) of the gate of the mold molding die. This trace is formed when the resin portion located at the gate of the mold molding die is separated from the sealing resin 90.
  • the trace is formed, for example, in the center of the third sealing side 95 in the Z direction.
  • the third sealing side 95 is partitioned into three regions R1 to R3 in the X direction.
  • the regions R1 to R3 are regions of the same size.
  • the region R1 is a region of the third sealing side 95 closer to the first sealing side 93
  • the region R3 is a region of the third sealing side 95 closer to the second sealing side 94
  • the region R2 is a region between the regions R1 and R3 in the X direction.
  • the trace may be provided in the region R1.
  • the trace may also be provided in the region R2.
  • the trace may also be provided in the region R3.
  • the surface roughness Rz of each of the sealing surface 91, sealing back surface 92, and first to fourth sealing side surfaces 93 to 96 of the sealing resin 90 is, for example, 5 ⁇ m or more and 20 ⁇ m or less.
  • the surface roughness Rz over the entire surface of each of the sealing surface 91 and sealing back surface 92 is, for example, 5 ⁇ m or more and 20 ⁇ m or less.
  • the surface roughness Rz over the entire surface of each of the first to fourth sealing side surfaces 93 to 96 is, for example, 5 ⁇ m or more and 20 ⁇ m or less.
  • the surface roughness Rz can be expressed as the sum of the height of the highest peak and the depth of the deepest valley among the contour curves in the reference length.
  • the sealing surface 91, sealing back surface 92, and first to fourth sealing side surfaces 93 to 96 are subjected to a roughening treatment to set each surface roughness Rz to, for example, 5 ⁇ m or more and 20 ⁇ m or less.
  • a roughening treatment is shot blasting.
  • the surface roughness Rz of each of the sealing surface 91, the sealing back surface 92, and the first to fourth sealing side surfaces 93-96 is, for example, 8 ⁇ m or more. In one example, the surface roughness Rz of each of the sealing surface 91, the sealing back surface 92, and the first to fourth sealing side surfaces 93-96 is, for example, 8 ⁇ m or more and 20 ⁇ m or less. In one example, the surface roughness Rz of the sealing surface 91, the sealing back surface 92, and the first to fourth sealing side surfaces 93-96 may be greater than the surface roughness Rz of the surfaces that make up the recess 91A.
  • the surface roughness Rz of the sealing surface 91, the sealing back surface 92, and the first to fourth sealing side surfaces 93 to 96 is 5 ⁇ m or more and 20 ⁇ m or less, but this is not limited to this.
  • the surface roughness Rz of each of the third sealing side surface 95 and the fourth sealing side surface 96 may be less than 5 ⁇ m or greater than 20 ⁇ m.
  • the surface roughness Rz of each of the first sealing side surface 93 and the second sealing side surface 94 may be less than 5 ⁇ m or greater than 20 ⁇ m.
  • the surface roughness Rz of each of the first to fourth sealing side surfaces 93 to 96 may be less than 5 ⁇ m or greater than 20 ⁇ m.
  • the surface roughness Rz of the sealing surface 91 may be less than 5 ⁇ m or greater than 20 ⁇ m. In short, it is sufficient that the surface roughness Rz of at least the sealing back surface 92 is 5 ⁇ m or more and 20 ⁇ m or less.
  • the sealing resin 90 is made of an insulating material.
  • One example of the insulating material is black epoxy resin.
  • the sealing resin 90 contains sulfur (S) as an additive. By containing sulfur, the sealing resin 90 can increase the adhesive strength with the first die pad 30, the second die pad 50A, and the third die pad 50B described below. On the other hand, by containing sulfur, the sealing resin 90 may cause sulfide corrosion with respect to the copper-based components in the signal transmission device 10.
  • the concentration of sulfur added to the sealing resin 90 is set in consideration of the balance between improving the adhesive strength between the first die pad 30, the second die pad 50A, and the third die pad 50B and the sealing resin 90 and suppressing the sulfide corrosion. In one example, the concentration of sulfur added to the sealing resin 90 is set to 300 ⁇ g/g or less.
  • each of the first terminals 11-17, second terminals 41-43, and third terminals 44-46 includes a first external electrode 11A-17A, a second external electrode 41A-43A, and a third external electrode 44A-46A exposed from the sealed back surface 92.
  • the first external electrodes 11A-17A are exposed from a portion of the sealed back surface 92 closer to the first sealed side surface 93.
  • the second external electrodes 41A-43A and the third external electrodes 44A-46A are exposed from a portion of the sealed back surface 92 closer to the second sealed side surface 94.
  • the first external electrodes 11A to 17A are arranged at the same positions in the X direction and spaced apart from one another in the Y direction.
  • the first external electrodes 11A to 17A are arranged in the following order from the fourth sealing side 96 to the third sealing side 95: first external electrodes 11A, 12A, 13A, 14A, 15A, 16A, 17A.
  • the second external electrodes 41A to 43A are arranged at the same positions in the X direction and spaced apart from each other in the Y direction.
  • the second external electrodes 41A to 43A are arranged in the order of second external electrodes 41A, 42A, 43A from the third sealing side 95 to the fourth sealing side 96.
  • the third external electrodes 44A to 46A are arranged at the same positions in the X direction and spaced apart from each other in the Y direction.
  • the third external electrodes 44A to 46A are arranged in the order of third external electrodes 44A, 45A, 46A from the third sealing side surface 95 toward the fourth sealing side surface 96.
  • the first external electrodes 11A-17A, second external electrodes 41A-43A, and third external electrodes 44A-46A each have a rectangular shape with the X direction being the long side and the Y direction being the short side.
  • the first external electrodes 11A-17A, second external electrodes 41A-43A, and third external electrodes 44A-46A are the same size.
  • the length in the X direction of the first external electrodes 11A-17A, second external electrodes 41A-43A, and third external electrodes 44A-46A is, for example, approximately 0.75 mm
  • the length in the Y direction is, for example, approximately 0.3 mm.
  • the pitch of the first external electrodes 11A to 17A is equal to the pitch of the second external electrodes 41A to 43A.
  • the pitch of the first external electrodes 11A to 17A is equal to the pitch of the third external electrodes 44A to 46A.
  • the pitch of the second external electrodes 41A to 43A is equal to the pitch of the third external electrodes 44A to 46A.
  • the pitch of the first external electrodes 11A to 17A, the pitch of the second external electrodes 41A to 43A, and the pitch of the third external electrodes 44A to 46A are each, for example, about 0.65 mm.
  • the pitch of the first external electrodes 11A to 17A can be defined by the center-to-center distance between two adjacent first external electrodes among the first external electrodes 11A to 17A.
  • the pitch of the second external electrodes 41A to 43A can be defined by the center-to-center distance between two adjacent second external electrodes among the second external electrodes 41A to 43A in the Y direction.
  • the pitch of the third external electrodes 44A to 46A can be defined by the center-to-center distance between two third external electrodes 44A to 46A that are adjacent to each other in the Y direction.
  • the distance between the second external electrode 43A and the third external electrode 44A in the Y direction is greater than each of the pitches of the first external electrodes 11A to 17A, the pitch of the second external electrodes 41A to 43A, and the pitch of the third external electrodes 44A to 46A.
  • FIG. 3 shows the overall internal structure of the signal transmission device 10.
  • Fig. 4 shows a schematic cross-sectional structure of the signal transmission device 10.
  • the sealing resin 90 is shown by a two-dot chain line in order to facilitate understanding of the drawings.
  • the signal transmission device 10 includes a first die pad 30, a second die pad 50A, a third die pad 50B, a first chip 60 mounted on the first die pad 30, a second chip 70 mounted on the second die pad 50A, and a third chip 80 mounted on the third die pad 50B.
  • the sealing resin 90 seals the first die pad 30, the second die pad 50A, the third die pad 50B, the first chip 60, the second chip 70, and the third chip 80.
  • the first die pad 30 is disposed closer to the first sealing side surface 93 than the center of the sealing resin 90 in the X direction.
  • the first chip 60 mounted on the first die pad 30 is formed in a flat plate shape with the thickness direction being the Z direction.
  • the shape of the first chip 60 in a plan view is rectangular with the short side direction being the X direction and the long side direction being the Y direction.
  • the first chip 60 is mounted on the first die pad 30 by a first conductive bonding material SD1. More specifically, the first chip 60 is die-bonded to the first die pad 30.
  • Both the second die pad 50A and the third die pad 50B are disposed in the X direction away from the first die pad 30 and closer to the second sealing side surface 94.
  • the X direction is the arrangement direction of the first die pad 30 and the second die pad 50A and the third die pad 50B.
  • Both the second die pad 50A and the third die pad 50B are disposed in the X direction closer to the second sealing side surface 94 than the center of the sealing resin 90.
  • Both the second die pad 50A and the third die pad 50B are disposed opposite the first die pad 30 in the X direction.
  • the first die pad 30 has a size in the Y direction that allows it to face the second die pad 50A and the third die pad 50B.
  • the X direction corresponds to the "first direction”.
  • the second die pad 50A and the third die pad 50B are spaced apart from each other in the Y direction. That is, in the first embodiment, the Y direction is the arrangement direction of the second die pad 50A and the third die pad 50B.
  • the second die pad 50A is arranged closer to the third sealing side surface 95 than the third die pad 50B.
  • the second die pad 50A is arranged closer to the third sealing side surface 95 than the center of the sealing resin 90 in the Y direction.
  • the third die pad 50B is arranged closer to the fourth sealing side surface 96 than the center of the sealing resin 90 in the Y direction.
  • the Y direction corresponds to the "second direction".
  • the second chip 70 mounted on the second die pad 50A is formed in a flat plate shape.
  • the shape of the second chip 70 in a plan view is rectangular with the X direction being the short side direction and the Y direction being the long side direction.
  • the size of the second chip 70 in the X direction is smaller than the size of the first chip 60 in the X direction.
  • the size of the second chip 70 in the Y direction is smaller than the size of the first chip 60 in the Y direction.
  • the second chip 70 is mounted on the second die pad 50A by the second conductive bonding material SD2. More specifically, the second chip 70 is die-bonded to the second die pad 50A.
  • the second chip 70 is disposed closer to the third die pad 50B on the second die pad 50A. When viewed from the X direction, the second chip 70 is disposed closer to the third sealing side surface 95 than the first chip 60. In the example of FIG. 3, when viewed from the X direction, the second chip 70 is disposed so as to partially overlap the first chip 60.
  • the third chip 80 mounted on the third die pad 50B is formed in a flat plate shape.
  • the shape of the third chip 80 in a plan view is a rectangle with the X direction being the short side direction and the Y direction being the long side direction.
  • the size of the third chip 80 in the X direction is smaller than the size of the first chip 60 in the X direction.
  • the size of the third chip 80 in the Y direction is smaller than the size of the first chip 60 in the Y direction.
  • the sizes of the third chip 80 in the X direction and the Y direction are the same as the sizes of the second chip 70 in the X direction and the Y direction.
  • the third chip 80 is mounted on the third die pad 50B by the third conductive bonding material SD3. More specifically, the third chip 80 is die-bonded to the third die pad 50B. Note that, for example, solder paste or silver paste is used as the first to third conductive bonding materials SD1 to SD3.
  • the third chip 80 is disposed closer to the fourth sealing side surface 96 of the third die pad 50B. When viewed from the X direction, the third chip 80 is disposed closer to the fourth sealing side surface 96 than the first chip 60. In the example of FIG. 3, when viewed from the X direction, the third chip 80 is disposed so as to partially overlap the first chip 60.
  • the signal transmission device 10 includes first internal terminal portions 12B-17B, second internal terminal portions 42B, 43B, and third internal terminal portions 45B, 46B.
  • the sealing resin 90 seals the first internal terminal portions 12B-17B, the second internal terminal portions 42B, 43B, and the third internal terminal portions 45B, 46B.
  • the first internal terminal portions 12B-17B constitute part of the first terminals 12-17. In other words, it can be said that the first terminals 12-17 include the first internal terminal portions 12B-17B.
  • the second internal terminal portions 42B, 43B constitute part of the second terminals 42, 43. In other words, it can be said that the second terminals 42, 43 include the second internal terminal portions 42B, 43B.
  • the third internal terminal portions 45B, 46B constitute part of the third terminals 45, 46. In other words, the third terminals 45, 46 can be said to include the third internal terminal portions 45B, 46B.
  • the first terminals 11 to 17 are arranged on the opposite side of the first chip 60 from the second chip 70 and the third chip 80 in the X direction.
  • the first terminals 11 to 17 are arranged closer to the first sealing side surface 93 than the first chip 60 in the X direction.
  • the second terminals 41 to 43 are disposed on the opposite side of the second chip 70 from the first chip 60 in the X direction. In a plan view, the second terminals 41 to 43 can also be said to be disposed on the opposite side of the second chip 70 from the first die pad 30 in the X direction. In the first embodiment, in a plan view, the second terminals 41 to 43 are disposed closer to the second sealing side surface 94 than the second chip 70.
  • the third terminals 44 to 46 are disposed on the opposite side of the third chip 80 from the first chip 60 in the X direction. In other words, in a plan view, the third terminals 44 to 46 are disposed on the opposite side of the third chip 80 from the first die pad 30 in the X direction. In the first embodiment, in a plan view, the third terminals 44 to 46 are disposed closer to the second sealing side surface 94 than the third chip 80.
  • the first terminal 17 is configured such that the first external electrode 17A and the first internal terminal portion 17B are connected by the first via 17C.
  • the first internal terminal portion 17B is disposed closer to the sealing surface 91 than the first external electrode 17A and is spaced apart.
  • the first internal terminal portion 17B is disposed at the same position in the Z direction as the first die pad 30.
  • the first via 17C is provided between the first external electrode 17A and the first internal terminal portion 17B in the Z direction.
  • the first terminals 12 to 16 have the same configuration as the first terminal 17.
  • the first terminals 12 to 16 are configured such that the first external electrodes 12A to 16A and the first internal terminal portions 12B to 16B are connected by the first vias 12C to 16C.
  • the first terminal 11 includes a first via 11C that connects the first external electrode 11A and the first die pad 30.
  • the first terminal 11 includes the first external electrode 11A and the first via 11C. It can be said that the first terminal 11 is electrically connected to the first die pad 30.
  • the first external electrodes 11A, 12A are arranged closer to the fourth sealing side surface 96 than the first chip 60.
  • the first external electrodes 11A, 12A are arranged between the first chip 60 and the fourth sealing side surface 96.
  • the first external electrodes 13A to 15A are arranged in a position overlapping with the first chip 60.
  • the first external electrodes 16A, 17A are arranged closer to the third sealing side surface 95 than the first chip 60.
  • the first external electrodes 16A, 17A are arranged between the first chip 60 and the third sealing side surface 95.
  • the second terminal 41 includes a second via 41C that connects the second external electrode 41A and the second die pad 50A.
  • the second terminal 41 includes the second external electrode 41A and the second via 41C. It can be said that the second terminal 41 is electrically connected to the second die pad 50A.
  • the second terminals 42, 43 are configured such that the second external electrodes 42A, 43A and the second internal terminal portions 42B, 43B are connected by second vias 42C, 43C.
  • the second internal terminal portions 42B, 43B are arranged at a distance from the second external electrodes 42A, 43A toward the sealing surface 91 (see FIG. 4).
  • the second internal terminal portions 42B, 43B are arranged at the same position in the Z direction as the second die pad 50A.
  • the second internal terminal portions 42B, 43B are arranged at the same position in the Z direction as the first internal terminal portions 12B to 17B.
  • the second external electrode 41A When viewed from the X direction, the second external electrode 41A is disposed closer to the third sealing side surface 95 than the second chip 70. When viewed from the X direction, the second external electrode 41A can also be said to be disposed between the second chip 70 and the third sealing side surface 95 in the Y direction. When viewed from the X direction, the second external electrodes 42A, 43A are disposed in positions that overlap the second chip 70.
  • the third terminal 44 includes a third via 44C that connects the third external electrode 44A and the third die pad 50B.
  • the third terminal 44 includes the third external electrode 44A and the third via 44C. It can be said that the third terminal 44 is electrically connected to the third die pad 50B.
  • the third terminals 45, 46 are configured such that the third external electrodes 45A, 46A and the third internal terminal portions 45B, 46B are connected by third vias 45C, 46C.
  • the third internal terminal portions 45B, 46B are arranged closer to the sealing surface 91 than the third external electrodes 45A, 46A.
  • the third internal terminal portions 45B, 46B are arranged at the same position in the Z direction as the third die pad 50B.
  • the third internal terminal portions 45B, 46B are arranged at the same position in the Z direction as the first internal terminal portions 12B to 17B.
  • the third external electrode 44A When viewed from the X direction, the third external electrode 44A is disposed closer to the third sealing side surface 95 than the third chip 80. When viewed from the X direction, the third external electrodes 45A and 46A are disposed in positions that overlap the third chip 80.
  • the first die pad 30 is formed over most of the area between the third sealing side surface 95 and the fourth sealing side surface 96 in the Y direction.
  • the first die pad 30 has a first tip surface 31, a first base end surface 32, a first side surface 33, and a second side surface 34.
  • the first tip surface 31 is the end surface closest to the second sealing side surface 94 (see Fig. 3) among both end surfaces of the first die pad 30 in the X direction
  • the first base end surface 32 is the end surface closest to the first sealing side surface 93 among both end surfaces of the first die pad 30 in the X direction.
  • the first side surface 33 is the end surface closest to the third sealing side surface 95 (see Fig. 3) among both end surfaces of the first die pad 30 in the Y direction
  • the second side surface 34 is the end surface closest to the fourth sealing side surface 96 (see Fig. 3) among both end surfaces of the first die pad 30 in the Y direction.
  • the first tip surface 31 is a surface that faces both the second die pad 50A and the third die pad 50B (see FIG. 3 ) in the X direction and extends along the Y direction in a plan view.
  • the length of the first tip surface 31 in the Y direction is longer than the length of the first base end surface 32 in the Y direction.
  • Both the first side surface 33 and the second side surface 34 are surfaces that extend along the X direction in a plan view.
  • the first die pad 30 further has a first distal curved surface 35A, a second distal curved surface 35B, and a base curved surface 36.
  • the first tip side curved surface 35A is formed between the first tip surface 31 and the first side surface 33.
  • the first tip side curved surface 35A has a shape in which the portion between the first tip surface 31 and the first side surface 33 is R-chamfered.
  • the second tip side curved surface 35B is formed between the first tip surface 31 and the second side surface 34.
  • the second tip side curved surface 35B has a shape in which the portion between the first tip surface 31 and the second side surface 34 is R-chamfered.
  • the arc length of the first tip side curved surface 35A and the arc length of the second tip side curved surface 35B are equal to each other. In one example, it can be said that the curvature radius of the first tip side curved surface 35A and the curvature radius of the second tip side curved surface 35B are equal to each other in a plan view.
  • the base end curved surface 36 is formed between the first base end surface 32 and the first side surface 33.
  • the base end curved surface 36 has a shape in which the portion between the first base end surface 32 and the first side surface 33 is R-chamfered.
  • the arc length of both the first tip end curved surface 35A and the second tip end curved surface 35B is equal to the arc length of the base end curved surface 36.
  • the radius of curvature of both the first tip end curved surface 35A and the second tip end curved surface 35B is equal to the radius of curvature of the base end curved surface 36.
  • the first die pad 30 further has a first recess 37A into which the first internal terminal portion 12B fits, a second recess 37B into which the first internal terminal portion 13B fits, and a third recess 37C into which the first internal terminal portions 14B to 17B fit.
  • the first to third recesses 37A to 37C are open toward the first sealing side surface 93.
  • the first recessed portion 37A is provided between the first external electrode 11A and the first external electrode 13A in the Y direction in a plan view.
  • the first recessed portion 37A is provided at a position overlapping the first external electrode 12A in a plan view.
  • the corner portion of the first external electrode 12A which is on the fourth sealing side surface 96 and closer to the first chip 60, is provided at a position overlapping the first die pad 30 in a plan view.
  • the first recessed portion 37A includes a first surface 37A1 extending in the X direction from the first base end surface 32, a second surface 37A2 that is an inclined surface extending from the first surface 37A1 toward the first chip 60, and a curved concave surface 37A3 that is connected to the second surface 37A2.
  • the first surface 37A1 is formed closer to the first external electrode 11A than the first external electrode 12A in a plan view. In a plan view, the distance between the first external electrode 12A and the first surface 37A1 in the Y direction is smaller than the distance between the first external electrode 11A and the first surface 37A1 in the Y direction.
  • the second surface 37A2 is located closer to the first internal terminal portion 12B than the above-mentioned corner portion of the first external electrode 12A in a plan view.
  • the second surface 37A2 is inclined so as to approach the first side surface 33 as it moves from the first base end surface 32 toward the first tip surface 31.
  • the curved concave surface 37A3 is located closer to the first external electrode 13A than the first external electrode 12A in a plan view.
  • the curved concave surface 37A3 does not have a portion that overlaps with the first external electrode 12A in a plan view.
  • the first internal terminal portion 12B has a shape that generally follows the shape of the first recessed portion 37A in a plan view.
  • the tip surface of the first internal terminal portion 12B that faces the curved concave surface 37A3 includes a curved convex surface that follows the shape of the curved concave surface 37A3.
  • the first internal terminal portion 12B overlaps with the first external electrode 12A and includes a via connection portion 12BA to which the first via 11C is connected, and a wire connection portion 12BB extending from the via connection portion 12BA toward the first chip 60.
  • the via connection portion 12BA constitutes the end portion of the first internal terminal portion 12B that is closer to the first sealing side surface 93.
  • the via connection portion 12BA is connected to a portion of the first external electrode 12A that is closer to the first sealing side surface 93 than the center in the X direction.
  • the wire connection portion 12BB extends obliquely from the first base end surface 32 toward the first tip surface 31 toward the third sealing side surface 95. It can also be said that the wire connection portion 12BB extends from the via connection portion 12BA toward the first chip 60.
  • the wire connection portion 12BB includes a protruding portion that protrudes from the first external electrode 12A toward the first external electrode 13A in a planar view. It can also be said that this protruding portion protrudes from the first external electrode 12A toward the first chip 60 in a planar view.
  • the wire connection portion 12BB includes a tip surface that faces the curved concave surface 37A3 of the first internal terminal portion 12B.
  • the first via 12C connects the via connection portion 12BA and the first external electrode 12A. Therefore, the first via 12C is connected to a portion of the first external electrode 12A that is closer to the first sealing side surface 93 than the center in the X direction.
  • the second recessed portion 37B is provided between the first external electrode 12A and the first external electrode 14A in the Y direction in a plan view.
  • the second recessed portion 37B is provided at a position overlapping with the first external electrode 13A in a plan view.
  • the second recessed portion 37B is provided at a position overlapping with a portion of the first external electrode 13A closer to the first chip 60 than the center in the X direction in a plan view.
  • the end of the first external electrode 13A closer to the first chip 60 in the X direction is provided at a position overlapping with the first die pad 30 in a plan view.
  • the portion of the second recessed portion 37B closer to the first recessed portion 37A has a curved concave surface.
  • the tip surface of the first inner terminal portion 13B facing the second recessed portion 37B includes a curved convex surface that follows the shape of the curved concave surface of the second recessed portion 37B.
  • the first internal terminal portion 13B extends obliquely toward the third sealed side surface 95 from the first base end surface 32 toward the first tip surface 31.
  • the first internal terminal portion 13B is formed so that its width increases from the end portion on the first tip surface 31 side toward the end portion on the first base end surface 32 side.
  • the width of the first internal terminal portion 13B can be defined by the size in a direction perpendicular to the direction in which the first internal terminal portion 13B extends in a plan view.
  • the first internal terminal portion 13B includes a protruding portion that protrudes from the first external electrode 13A toward the first external electrode 12A in a plan view. This protruding portion protrudes closer to the first internal terminal portion 12B than the second recessed portion 37B when viewed from the X direction. Therefore, when viewed from the X direction, a portion of the protruding portion of the first internal terminal portion 13B is provided at a position that overlaps with the first recessed portion 37A. The protruding portion of the first internal terminal portion 13B is positioned closer to the first sealing side surface 93 than the protruding portion of the first internal terminal portion 12B.
  • the first via 13C connects the end of the first internal terminal 13B that enters the second recess 37B to the first external electrode 13A.
  • the first via 13C is connected to a portion of the first external electrode 13A that is closer to the first chip 60 than the center in the X direction.
  • the third recessed portion 37C is located closer to the third sealing side surface 95 than the first external electrode 13A in a plan view.
  • the third recessed portion 37C includes a curved concave surface 37C1 extending from the second recessed portion 37B toward the first chip 60, a bottom surface 37C2 extending from the curved concave surface 37C1 along the Y direction, and an inclined surface 37C3 connected to the bottom surface 37C2.
  • the curved concave surface 37C1 is a surface that connects to the second recessed portion 37B and has a larger radius of curvature than the curved concave surface 37A3 of the first recessed portion 37A.
  • the curved concave surface 37C1 curves toward the third sealing side surface 95 as it moves from the second recessed portion 37B toward the first chip 60.
  • the bottom surface 37C2 extends across the first external electrodes 14A to 16A in the Y direction.
  • the bottom surface 37C2 is located closer to the first chip 60 than the first external electrodes 14A to 16A in a plan view.
  • the inclined surface 37C3 is provided closer to the third sealing side surface 95 than the first external electrode 16A in the Y direction.
  • the inclined surface 37C3 is inclined toward the third sealing side surface 95 as it moves from the bottom surface 37C2 toward the first base end surface 32.
  • the inclined surface 37C3 extends across the first external electrode 17A in a planar view.
  • the portion of the first external electrode 17A that is closer to the first tip surface 31 and the first side surface 33 is provided at a position that overlaps with the first die pad 30 in a planar view.
  • the first internal terminal portion 17B is formed over substantially the entire Y-direction of the third recessed portion 37C in a plan view.
  • the first internal terminal portion 17B includes a side surface that follows the shape of the third recessed portion 37C in a plan view. That is, the first internal terminal portion 17B includes a first side surface that is a curved convex surface along the curved concave surface 37C1, a second side surface that extends in the Y-direction along the bottom surface 37C2, and a third side surface that extends along the inclined surface 37C3.
  • the first internal terminal portion 17B extends from the first external electrode 17A to a position closer to the first external electrode 13A than the first external electrode 14A in a plan view.
  • the first internal terminal portion 17B is provided closer to the third sealing side surface 95 than the first external electrode 13A in a plan view.
  • the first internal terminal portion 17B includes an inclined portion 17BA, an extension portion 17BB, and a wire connection portion 17BC.
  • the inclined portion 17BA is formed by a portion of the first internal terminal portion 17B that is closer to the third sealed side surface 95 than the first external electrode 16A in the X direction.
  • the inclined portion 17BA extends obliquely toward the third sealed side surface 95 from the first distal end surface 31 toward the first base end surface 32.
  • the inclined portion 17BA includes an overlapping portion that overlaps with the first external electrode 17A in a plan view.
  • the inclined portion 17BA includes the third side surface.
  • the extension portion 17BB extends in the Y direction from the inclined portion 17BA toward the fourth sealing side surface 96.
  • the portion of the extension portion 17BB closer to the inclined portion 17BA is arranged to overlap with a portion of the first external electrode 16A closer to the first tip surface 31 than the center in the X direction in a plan view.
  • the extension portion 17BB is disposed closer to the first tip surface 31 than the first external electrode 15A in a plan view.
  • the extension portion 17BB includes the second side surface.
  • a recessed portion 17BD is provided in the portion of the extension portion 17BB closer to the first sealing side surface 93.
  • the recessed portion 17BD is provided closer to the fourth sealing side surface 96 than the first external electrode 16A in the Y direction.
  • the recessed portion 17BD is recessed in the portion of the extension portion 17BB closer to the first sealing side surface 93 toward the first chip 60.
  • the wire connection portion 17BC is formed by a portion of the first internal terminal portion 17B that is closer to the fourth sealing side surface 96 than the recessed portion 17BD. In a plan view, the wire connection portion 17BC includes a portion that overlaps with the first external electrode 14A. The wire connection portion 17BC extends from the extension portion 17BB toward the first sealing side surface 93. The wire connection portion 17BC extends obliquely toward the fourth sealing side surface 96 as it approaches the first sealing side surface 93. In one example, the acute angle formed by the extension direction of the wire connection portion 17BC and the X direction is, for example, greater than 0° and less than or equal to 30°.
  • the first via 17C connects the overlapping portion of the inclined portion 17BA to the first external electrode 17A.
  • the first via 17C is connected to the end of the overlapping portion of the inclined portion 17BA that is closer to the third sealing side surface 95.
  • the first via 17C is connected to the center of the first external electrode 17A in the X direction.
  • the first internal terminals 14B to 16B are disposed closer to the first sealing side surface 93 and spaced apart from the first internal terminal 17B.
  • the first internal terminal 14B is disposed at a position overlapping the wire connection portion 17BC and the recessed portion 17BD when viewed from the X direction. A portion of the first internal terminal 14B fits into the recessed portion 17BD.
  • the first internal terminal portion 14B includes a first terminal portion 14BA extending along the Y direction and a second terminal portion 14BB extending from the first terminal portion 14BA toward the first chip 60.
  • the first terminal portion 14BA is provided closer to the first sealing side surface 93 than the center of the first external electrode 14A in the X direction in a plan view.
  • the tip surface of the first terminal portion 14BA is provided closer to the first external electrode 14A than the first external electrode 13A in a plan view.
  • the tip surface of the first terminal portion 14BA forms the end surface of the first terminal portion 14BA in the Y direction.
  • the first terminal portion 14BA includes an overlapping portion that overlaps with the first external electrode 14A, and a protruding portion that protrudes from the first external electrode 14A toward the first external electrode 13A.
  • the second terminal portion 14BB extends obliquely from the first base end surface 32 toward the first tip surface 31 toward the third sealing side surface 95. In a plan view, the second terminal portion 14BB is provided closer to the first external electrode 14A than the first external electrode 15A.
  • the second terminal portion 14BB includes an overlapping portion that overlaps with the first external electrode 14A, and a protruding portion that protrudes from the first external electrode 14A toward the first external electrode 15A. In a plan view, the area of the protruding portion of the second terminal portion 14BB is larger than the area of the overlapping portion.
  • the first via 14C connects the end of the first terminal 14BA closer to the second terminal 14BB and the first external electrode 14A.
  • the first via 14C is connected to a portion of the first external electrode 14A closer to the first sealing side surface 93 than the center in the X direction.
  • the first internal terminal portion 15B is disposed at a position overlapping with the recessed portion 17BD when viewed from the X direction. A portion of the first internal terminal portion 15B is recessed into the recessed portion 17BD.
  • the tip surface of the first internal terminal portion 15B facing the recessed portion 17BD includes a curved convex surface that is convex toward the recessed portion 17BD. This curved convex surface forms the side surface facing the first die pad 30.
  • the first internal terminal portion 15B extends obliquely from the first base end surface 32 toward the first tip surface 31 toward the fourth sealing side surface 96.
  • the first internal terminal portion 15B is formed so that its width increases from the end on the first tip surface 31 side toward the end on the first base end surface 32 side.
  • the width of the first internal terminal portion 15B can be defined by the size in a direction perpendicular to the direction in which the first internal terminal portion 15B extends in a plan view.
  • the first internal terminal portion 15B includes a protruding portion that protrudes from the first external electrode 15A toward the first external electrode 16A in a plan view.
  • the first via 15C connects the end of the first internal terminal 15B that enters the recess 17BD to the first external electrode 15A.
  • the first via 15C is connected to a portion of the first external electrode 15A that is closer to the first chip 60 than the center in the X direction.
  • the first internal terminal portion 16B is provided closer to the first sealing side surface 93 than the center of the first external electrode 16A in the X direction.
  • the first internal terminal portion 16B is provided closer to the first sealing side surface 93 than the recessed portion 17BD.
  • the first internal terminal portion 16B is provided at a position overlapping with the end of the extension portion 17BB closer to the inclined portion 17BA when viewed from the X direction.
  • the tip portion of the first internal terminal portion 16B is provided at a position overlapping with the recessed portion 17BD when viewed from the X direction.
  • the tip surface of the first internal terminal portion 16B faces the first chip 60. Therefore, the tip surface of the first internal terminal portion 16B forms a side surface facing the first die pad 30.
  • the tip surface of the first internal terminal portion 16B includes a curved convex surface that is convex toward the recessed portion 17BD.
  • the first internal terminal portion 16B extends obliquely from the first base end surface 32 toward the first tip end surface 31 toward the fourth sealing side surface 96.
  • the acute angle formed between the extension direction of the first internal terminal portion 16B and the X direction is larger than the acute angle formed between the extension direction of the first internal terminal portion 15B and the X direction.
  • the acute angle formed between the extension direction of the first internal terminal portion 16B and the X direction is 30° or more and 50° or less. In the example shown in FIG. 5, the acute angle formed between the extension direction of the first internal terminal portion 16B and the X direction is 40°.
  • the first internal terminal portion 16B includes an overlapping portion that overlaps with the first external electrode 16A, and a protruding portion that protrudes from the first external electrode 16A toward the first external electrode 15A.
  • the protruding portion includes the tip surface of the first internal terminal portion 16B.
  • the first via 16C connects the end of the first internal terminal portion 16B closer to the first sealing side surface 93 to the first external electrode 16A.
  • the first via 16C is connected to a portion of the first external electrode 16A closer to the first sealing side surface 93 than the center in the X direction.
  • the first die pad 30 further has a cover portion 39 that surrounds the portion of the third recessed portion 37 ⁇ /b>C that is closer to the third sealing side surface 95 from the first sealing side surface 93 .
  • the cover portion 39 extends from a corner portion of the first die pad 30 that is closer to the first sealing side surface 93 and the third sealing side surface 95 toward the fourth sealing side surface 96.
  • the cover portion 39 and the inclined surface 37C3 of the third recessed portion 37C surround the inclined portion 17BA of the first internal terminal portion 17B. Therefore, a part of the cover portion 39 is disposed between the inclined portion 17BA and the first internal terminal portion 16B.
  • the first die pad 30 further has an inclined surface 38A formed between the first base end surface 32 and the second side surface 34, and a protruding portion 38B protruding from the inclined surface 38A in a plan view.
  • the inclined surface 38A is inclined so as to approach the second side surface 34 from the first base end surface 32 toward the first tip surface 31.
  • the inclined surface 38A extends across the first external electrode 11A in a plan view. Therefore, the first external electrode 11A includes a portion that overlaps with the first die pad 30 in a plan view.
  • the first via 11C connects the first external electrode 11A to a portion of the first die pad 30 that overlaps with the first external electrode 11A.
  • the first via 11C is connected to a portion of the first external electrode 11A that is closer to the first tip surface 31 than the center in the X direction.
  • the protrusion 38B extends in a direction perpendicular to the inclined surface 38A in a plan view.
  • the protrusion 38B is formed in a triangular shape in a plan view and includes a separation portion 38B1 that is disposed at a distance from the inclined surface 38A, and a connection portion 38B2 that connects the separation portion 38B1 and the inclined surface 38A.
  • the separation portion 38B1 includes a protruding portion that protrudes from the first external electrode 11A toward the fourth sealing side surface 96 in a plan view.
  • Figure 6 shows the cross-sectional structure of the wire connection portion 12BB of the first internal terminal portion 12B. Note that since the cross-sectional structure of the first internal terminal portions 13B to 17B is similar to the cross-sectional structure of the wire connection portion 12BB, the drawings and detailed description thereof will be omitted.
  • the internal terminal body 20 of the wire connection portion 12BB has an internal terminal surface 21, an internal terminal back surface 22 opposite the internal terminal surface 21, and an internal terminal side surface 23 connecting the internal terminal surface 21 and the internal terminal back surface 22.
  • the internal terminal side surface 23 includes a tip surface 24 facing the first recessed portion 37A (see FIG. 5) of the first die pad 30.
  • the internal terminal surface 21 is the surface on the side to which the first terminal wire WB described below is joined, and faces the same side as the sealing surface 91 (see FIG. 4).
  • the tip surface 24 is formed in a concave shape that is recessed away from the first die pad 30.
  • the tip surface 24 is recessed from both the end on the internal terminal front surface 21 side and the end on the internal terminal back surface 22 side toward the center of the tip surface 24 in the Z direction.
  • the deepest position of the concave tip surface 24 is a position that is approximately 1/3 of the thickness of the wire connection portion 12BB from the internal terminal back surface 22. Note that the shape of the tip surface 24 in the cross-sectional view of FIG. 6 can be changed as desired.
  • a plating layer 25 is formed on the internal terminal surface 21.
  • the plating layer 25 is formed of a material containing silver, for example.
  • the plating layer 25 is formed over substantially the entire internal terminal surface 21 in the wire connection portion 12BB.
  • the thickness of the plating layer 25 is thinner than the thickness of the internal terminal body 20 of the wire connection portion 12BB.
  • End surface 25A of plating layer 25 closer to tip surface 24 is formed at a position closer to via connection portion 12BA (see FIG. 5) than the edge of internal terminal surface 21 closer to tip surface 24.
  • plating layer 25 does not cover the end surface of internal terminal surface 21 closer to tip surface 24.
  • the end of internal terminal surface 21, including the edge closer to tip surface 24, is in contact with sealing resin 90 (see FIG. 1).
  • the end surface 25A of the plating layer 25 is inclined away from the edge of the internal terminal surface 21 closer to the tip surface 24 as it moves from the front surface to the back surface of the plating layer 25.
  • the distance in the X direction between the back surface of the plating layer 25 and the edge of the internal terminal surface 21 closer to the tip surface 24 is, for example, equal to or greater than the thickness of the plating layer 25. Note that the distance in the X direction between the back surface of the plating layer 25 and the edge of the internal terminal surface 21 closer to the tip surface 24 can be changed as desired.
  • the plating layer 25 does not cover the tip surface 24 of the wire connection portion 12BB. Therefore, the tip surface 24 is in contact with the sealing resin 90 (see FIG. 4). Furthermore, although not shown, the plating layer 25 does not cover the internal terminal side surface 23 other than the tip surface 24. Therefore, the internal terminal side surface 23 is in contact with the sealing resin 90.
  • the second die pad 50A has a second tip surface 51A, a second base end surface 52A, a third side surface 53A, and a fourth side surface 54A.
  • the second tip surface 51A is the end surface closest to the first sealing side surface 93 (see Fig. 3) among both end surfaces in the X direction of the second die pad 50A
  • the second base end surface 52A is the end surface closest to the second sealing side surface 94 among both end surfaces in the X direction of the second die pad 50A.
  • the third side surface 53A is the end surface closest to the third sealing side surface 95 among both end surfaces in the Y direction of the second die pad 50A
  • the fourth side surface 54A is the end surface closest to the fourth sealing side surface 96 among both end surfaces in the Y direction of the second die pad 50A.
  • the second tip surface 51A is a surface that faces the first die pad 30 (see Fig. 3) in the X direction and is a surface that extends along the Y direction in a plan view.
  • Both the third side surface 53A and the fourth side surface 54A are surfaces that extend along the X direction in a plan view.
  • the second die pad 50A further has a third distal curved surface 55AA, a fourth distal curved surface 55AB, and a base curved surface 56A.
  • the third tip side curved surface 55AA is formed between the second tip surface 51A and the third side surface 53A.
  • the third tip side curved surface 55AA has a shape in which the portion between the second tip surface 51A and the third side surface 53A is R-chamfered.
  • the fourth tip side curved surface 55AB is formed between the second tip surface 51A and the fourth side surface 54A.
  • the fourth tip side curved surface 55AB has a shape in which the portion between the second tip surface 51A and the fourth side surface 54A is R-chamfered.
  • the arc length of the third tip side curved surface 55AA and the arc length of the fourth tip side curved surface 55AB are equal to each other. In one example, it can be said that the curvature radius of the third tip side curved surface 55AA and the curvature radius of the fourth tip side curved surface 55AB are equal to each other in a plan view.
  • the arc length of the third tip curved surface 55AA and the fourth tip curved surface 55AB is equal to the arc length of the first tip curved surface 35A and the second tip curved surface 35B.
  • the radius of curvature of the third tip curved surface 55AA and the fourth tip curved surface 55AB is equal to the radius of curvature of the first tip curved surface 35A and the second tip curved surface 35B.
  • the base end curved surface 56A is formed between the second base end surface 52A and the fourth side surface 54A.
  • the base end curved surface 56A has a shape in which the portion between the second base end surface 52A and the fourth side surface 54A is R-chamfered.
  • the arc length of both the third tip end curved surface 55AA and the sixth tip end curved surface 55BB is equal to the arc length of the base end curved surface 56A.
  • the curvature radius of both the third tip end curved surface 55AA and the fourth tip end curved surface 55AB is equal to the curvature radius of the base end curved surface 56A.
  • the second die pad 50A further has a first recessed portion 57AA and a second recessed portion 57AB.
  • the first recessed portion 57AA and the second recessed portion 57AB are provided at the same position in the X direction and spaced apart from each other in the Y direction. Both the first recessed portion 57AA and the second recessed portion 57AB are provided at a position overlapping the second chip 70 when viewed from the X direction.
  • the first recessed portion 57AA and the second recessed portion 57AB are provided closer to the fourth side surface 54A than the second external electrode 41A in a plan view.
  • the second recessed portion 57AB is provided closer to the fourth side surface 54A than the first recessed portion 57AA.
  • Both the first recessed portion 57AA and the second recessed portion 57AB are provided closer to the second sealing side surface 94 than the second chip 70 in a plan view.
  • Both the first recessed portion 57AA and the second recessed portion 57AB are open toward the second sealing side surface 94.
  • Both the first recessed portion 57AA and the second recessed portion 57AB include a pair of side surfaces extending in the X direction from the second base end surface 52A toward the second tip surface 51A, and a curved concave surface provided between the pair of side surfaces and recessed toward the second tip surface 51A.
  • the second terminal 42 fits into the first recess 57AA.
  • the second external electrode 42A of the second terminal 42 includes a protruding portion that protrudes from the first recessed portion 57AA toward the second sealed side surface 94 in a plan view.
  • the second internal terminal portion 42B of the second terminal 42 is housed in the first recessed portion 57AA in plan view. As a result, the second internal terminal portion 42B is arranged to overlap the second external electrode 42A in plan view.
  • the second internal terminal portion 42B is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in plan view.
  • the four corners of the second internal terminal portion 42B are formed by curved surfaces.
  • the second via 42C connects the end of the second internal terminal portion 42B closer to the second chip 70 in the X direction to the second external electrode 42A.
  • the second via 42C is connected to the end of the second external electrode 42A closer to the second chip 70.
  • the second terminal 43 fits into the second recess 57AB.
  • the second external electrode 43A of the second terminal 43 includes a protruding portion that protrudes from the second recessed portion 57AB toward the second sealed side surface 94 in a plan view.
  • the second internal terminal portion 43B of the second terminal 43 is housed in the second recess portion 57AB in a plan view. As a result, the second internal terminal portion 43B is arranged to overlap the second external electrode 43A in a plan view.
  • the second internal terminal portion 43B is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view.
  • the four corners of the second internal terminal portion 43B are configured with curved surfaces.
  • the shape of the second internal terminal portion 43B in a plan view is the same as the shape of the second internal terminal portion 42B in a plan view.
  • the second via 43C connects the end of the second internal terminal portion 43B closer to the second chip 70 in the X direction to the second external electrode 43A.
  • the second via 43C is connected to the end of the second external electrode 43A closer to the second chip 70.
  • the second die pad 50A further has an inclined surface 58 and a protruding portion 59 .
  • the inclined surface 58 and the protruding portion 59 are provided closer to the third side surface 53A than the first recessed portion 57AA.
  • the inclined surface 58 is provided to cut out a corner portion of the second die pad 50A closer to the second sealing side surface 94 and the third sealing side surface 95.
  • the inclined surface 58 is provided between the second base end surface 52A and the third side surface 53A.
  • the inclined surface 58 is inclined so as to approach the third sealing side surface 95 as it moves from the second base end surface 52A toward the second tip surface 51A.
  • the inclined surface 58 includes a portion that overlaps with the second external electrode 41A in a plan view. Therefore, the second external electrode 41A includes a portion that overlaps with the second die pad 50A in a plan view.
  • the second via 41C is disposed closer to the second tip surface 51A than the inclined surface 58 in a plan view.
  • the second via 41C connects the second external electrode 41A to a portion of the second die pad 50A that overlaps with the second external electrode 41A.
  • the second via 41C is connected to an end of the second external electrode 41A that is closer to the second tip surface 51A.
  • the protrusion 59 extends from the inclined surface 58 toward the third sealing side surface 95 in a plan view.
  • the shape of the protrusion 59 in a plan view is approximately L-shaped.
  • the end of the protrusion 59 closer to the third sealing side surface 95 extends in the X direction toward the second tip surface 51A.
  • the protrusion 59 includes an overlapping portion that overlaps with the second external electrode 41A, and a protruding portion that protrudes from the second external electrode 41A toward the third sealing side surface 95.
  • Figure 8 shows the cross-sectional structure of the second internal terminal portion 42B. Note that since the cross-sectional structure of the second internal terminal portion 43B is similar to the cross-sectional structure of the second internal terminal portion 42B, the drawings and detailed description thereof will be omitted. Also, for convenience, the reference numerals relating to the second internal terminal portion 42B are the same as those relating to the wire connection portion 12BB of the first internal terminal portion 12B shown in Figure 6.
  • the internal terminal body 20 of the second internal terminal portion 42B has an internal terminal surface 21, an internal terminal back surface 22 opposite the internal terminal surface 21, and an internal terminal side surface 23 connecting the internal terminal surface 21 and the internal terminal back surface 22.
  • the internal terminal surface 21 of the second internal terminal portion 42B faces the same side as the internal terminal surface 21 of the first internal terminal portion 12B (see FIG. 6), and the internal terminal back surface 22 of the second internal terminal portion 42B faces the same side as the internal terminal back surface 22 of the first internal terminal portion 12B (see FIG. 6).
  • the tip surface 24 faces the bottom surface of the first recessed portion 57AA of the second die pad 50A in the X direction (see FIG. 7).
  • the tip surface 24 is formed in a concave shape that is recessed away from the bottom surface of the first recessed portion 57AA.
  • the tip surface 24 is recessed toward the center of the tip surface 24 in the Z direction from both the end on the internal terminal front surface 21 side and the end on the internal terminal back surface 22 side.
  • the deepest position of the concave tip surface 24 is approximately 1/3 of the thickness of the second internal terminal portion 42B from the internal terminal back surface 22.
  • the shape of the tip surface 24 in the cross-sectional view of FIG. 8 can be changed as desired.
  • a plating layer 25 is formed on the internal terminal surface 21.
  • the plating layer 25 is formed of a material containing silver, for example.
  • the plating layer 25 is formed of the same material as the plating layer 25 of the wire connection portion 12BB (see FIG. 6).
  • the plating layer 25 is formed over almost the entire internal terminal surface 21.
  • the thickness of the plating layer 25 is thinner than the thickness of the internal terminal body 20 of the second internal terminal portion 42B. In one example, the thickness of the plating layer 25 of the second internal terminal portion 42B is equal to the thickness of the plating layer 25 of the wire connection portion 12BB.
  • the thickness of the plating layer 25 of the second internal terminal portion 42B and the thickness of the plating layer 25 of the wire connection portion 12BB is, for example, within 20% of the thickness of the plating layer 25 of the second internal terminal portion 42B, it can be said that the thickness of the plating layer 25 of the second internal terminal portion 42B is equal to the thickness of the plating layer 25 of the wire connection portion 12BB.
  • the end surface 25A of the plating layer 25 near the tip surface 24 of the second internal terminal portion 42B is formed in a position closer to the second via 42C (see FIG. 7) than the edge of the internal terminal surface 21 near the tip surface 24 in a plan view. In other words, the plating layer 25 does not cover the edge of the internal terminal surface 21 near the tip surface 24. As a result, the end of the internal terminal surface 21, including the edge near the tip surface 24, is in contact with the sealing resin 90 (see FIG. 1).
  • end face 25A of plating layer 25 is inclined away from the end face of internal terminal surface 21 closer to tip surface 24 as it moves from the front surface to the back surface of plating layer 25.
  • the distance in the X direction between the back surface of plating layer 25 and the edge of internal terminal surface 21 closer to tip surface 24 is, for example, equal to or greater than the thickness of plating layer 25. Note that the distance in the X direction between the back surface of plating layer 25 and the edge of internal terminal surface 21 closer to tip surface 24 can be changed as desired.
  • the plating layer 25 does not cover the tip surface 24 of the second internal terminal portion 42B. Therefore, the tip surface 24 is in contact with the sealing resin 90. Furthermore, although not shown, the plating layer 25 does not cover the internal terminal side surface 23 other than the tip surface 24. Therefore, the internal terminal side surface 23 is in contact with the sealing resin 90.
  • the third die pad 50B has a third tip surface 51B, a third base end surface 52B, a fifth side surface 53B, and a sixth side surface 54B.
  • the third tip surface 51B is the end surface closest to the first sealing side surface 93 (see Fig. 3) among both end surfaces in the X direction of the third die pad 50B
  • the third base end surface 52B is the end surface closest to the second sealing side surface 94 among both end surfaces in the X direction of the third die pad 50B.
  • the fifth side surface 53B is the end surface closest to the third sealing side surface 95 among both end surfaces in the Y direction of the third die pad 50B
  • the sixth side surface 54B is the end surface closest to the fourth sealing side surface 96 among both end surfaces in the Y direction of the third die pad 50B.
  • the third tip surface 51B is a surface that faces the first die pad 30 (see Fig. 3) in the X direction and is a surface that extends along the Y direction in a plan view.
  • Both the fifth side surface 53B and the sixth side surface 54B are surfaces that extend along the X direction in a plan view.
  • the third die pad 50B further has a fifth tip side curved surface 55BA, a sixth tip side curved surface 55BB, and base side curved surfaces 56BA and 56BB.
  • the fifth tip side curved surface 55BA is formed between the third tip surface 51B and the fifth side surface 53B.
  • the fifth tip side curved surface 55BA has a shape in which the portion between the third tip surface 51B and the fifth side surface 53B is R-chamfered.
  • the sixth tip side curved surface 55BB is formed between the third tip surface 51B and the sixth side surface 54B.
  • the sixth tip side curved surface 55BB has a shape in which the portion between the third tip surface 51B and the sixth side surface 54B is R-chamfered.
  • the arc length of the fifth tip side curved surface 55BA and the arc length of the sixth tip side curved surface 55BB are equal to each other. In one example, it can be said that the curvature radius of the fifth tip side curved surface 55BA and the curvature radius of the sixth tip side curved surface 55BB are equal to each other in a plan view.
  • the arc length of the fifth tip curved surface 55BA and the sixth tip curved surface 55BB is equal to the arc length of the first tip curved surface 35A and the second tip curved surface 35B.
  • the radius of curvature of the fifth tip curved surface 55BA and the sixth tip curved surface 55BB is equal to the radius of curvature of the first tip curved surface 35A and the second tip curved surface 35B.
  • the arc length of the fifth tip curved surface 55BA and the sixth tip curved surface 55BB is equal to the arc length of the third tip curved surface 55AA and the fourth tip curved surface 55AB.
  • the radius of curvature of the fifth tip curved surface 55BA and the sixth tip curved surface 55BB is equal to the radius of curvature of the third tip curved surface 55AA and the fourth tip curved surface 55AB.
  • the base curved surface 56BA is formed between the third base end surface 52B and the fifth side surface 53B, and the base curved surface 56BB is formed between the third base end surface 52B and the sixth side surface 54B.
  • the base curved surface 56BA has a shape in which the portion between the second base end surface 52A and the fifth side surface 53B is R-chamfered
  • the base curved surface 56BB has a shape in which the portion between the second base end surface 52A and the sixth side surface 54B is R-chamfered.
  • the arc lengths of both the fifth tip curved surface 55BA and the sixth tip curved surface 55BB are equal to the arc lengths of the base curved surfaces 56BA and 56BB.
  • the curvature radii of both the fifth tip curved surface 55BA and the sixth tip curved surface 55BB are equal to the curvature radii of the base curved surfaces 56BA and 56BB.
  • the third die pad 50B further has a third recessed portion 57BA and a fourth recessed portion 57BB.
  • the third recessed portion 57BA and the fourth recessed portion 57BB are provided at the same position in the X direction and spaced apart from each other in the Y direction. Both the third recessed portion 57BA and the fourth recessed portion 57BB are provided at a position overlapping the second chip 70 when viewed from the X direction.
  • the third recessed portion 57BA and the fourth recessed portion 57BB are provided closer to the sixth side surface 54B than the third external electrode 44A in a plan view.
  • the fourth recessed portion 57BB is provided closer to the sixth side surface 54B than the third recessed portion 57BA.
  • Both the third recessed portion 57BA and the fourth recessed portion 57BB are provided closer to the second sealing side surface 94 than the third chip 80 in a plan view.
  • Both the third recessed portion 57BA and the fourth recessed portion 57BB are open toward the second sealing side surface 94.
  • Both the third recessed portion 57BA and the fourth recessed portion 57BB include a pair of side surfaces extending in the X direction from the third base end surface 52B toward the third tip surface 51B, and a curved concave surface provided between the pair of side surfaces and recessed toward the third tip surface 51B.
  • the third terminal 45 fits into the third recess 57BA.
  • the third external electrode 45A of the third terminal 45 includes a protruding portion that protrudes from the third recessed portion 57BA toward the second sealed side surface 94 in a plan view.
  • the third internal terminal portion 45B of the third terminal 45 is housed in the third recessed portion 57BA in a plan view. As a result, the third internal terminal portion 45B is arranged to overlap the third external electrode 45A in a plan view.
  • the third internal terminal portion 45B is formed in a rectangular shape with the X direction being the long side direction and the Y direction being the short side direction in a plan view.
  • the four corners of the third internal terminal portion 45B are formed by curved surfaces.
  • the third via 45C connects the end of the third internal terminal portion 45B closer to the third chip 80 in the X direction to the third external electrode 45A.
  • the third via 45C is connected to the end of the third external electrode 45A closer to the second chip 70.
  • the third terminal 46 fits into the fourth recess 57BB.
  • the third external electrode 46A of the third terminal 46 includes a protruding portion that protrudes from the fourth recessed portion 57BB toward the second sealed side surface 94 in a plan view.
  • the third internal terminal portion 46B of the third terminal 46 is housed in the fourth recessed portion 57BB in a plan view. As a result, the third internal terminal portion 46B is arranged to overlap the third external electrode 46A in a plan view.
  • the third internal terminal portion 46B is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view.
  • the four corners of the third internal terminal portion 46B are configured with curved surfaces.
  • the shape of the third internal terminal portion 46B in a plan view is the same as the shape of the third internal terminal portion 46B in a plan view.
  • the third via 46C connects the end of the third internal terminal portion 46B closer to the third chip 80 in the X direction to the third external electrode 46A.
  • the third via 46C is connected to the end of the third external electrode 46A closer to the second chip 70.
  • the third die pad 50B includes a portion that overlaps with the third external electrode 44A in a planar view.
  • the third external electrode 44A includes a portion that protrudes from the third die pad 50B toward the second sealing side surface 94 in a planar view.
  • the third via 44C connects the portion of the third die pad 50B that overlaps with the third external electrode 44A to the third external electrode 44A.
  • the third via 44C is connected to the end of the third external electrode 44A that is closer to the third tip surface 51B.
  • the cross-sectional structure of the third internal terminal portions 45B, 46B is the same as the cross-sectional structure of the second internal terminal portions 42B, 43B shown in FIG. 8. Therefore, a description of the cross-sectional structure of the third internal terminal portions 45B, 46B will be omitted.
  • the first chip 60 mounted on the first die pad 30 has a chip surface 61, a chip back surface 62 (see FIG. 14) facing the opposite side to the chip surface 61 in the Z direction, and first to fourth chip side surfaces 63 to 66 connecting the chip surface 61 and the chip back surface 62.
  • a chip front surface 61 faces the side opposite to the first die pad 30 side with respect to the first chip 60
  • a chip back surface 62 faces the side facing the first die pad 30
  • the first chip side surface 63 and the second chip side surface 64 constitute both end surfaces of the first chip 60 in the X direction in a plan view.
  • the first chip side surface 63 is the chip side surface on the side of the first chip 60 on which the first terminals 11 to 17 are arranged
  • the second chip side surface 64 is the chip side surface on the side of the first chip 60 on which the second chip 70 and the third chip 80 (both see FIG. 7 ) are arranged.
  • the third chip side surface 65 and the fourth chip side surface 66 constitute both end surfaces of the first chip 60 in the Y direction in a plan view.
  • the third chip side surface 65 is the chip side surface closer to the third sealing side surface 95 of the sealing resin 90
  • the fourth chip side surface 66 is the chip side surface closer to the fourth sealing side surface 96.
  • the first chip 60 has a plurality of first electrode pads 67 (six in the first embodiment), a plurality of second electrode pads 68 (seven in the first embodiment), and a plurality of third electrode pads 69 (two in the first embodiment).
  • Each of the first electrode pads 67, each of the second electrode pads 68, and each of the third electrode pads 69 are provided so as to be exposed from the chip surface 61.
  • the number of each of the second electrode pads 68 and third electrode pads 69 can be changed as desired.
  • Each of the first electrode pads 67, second electrode pads 68, and third electrode pads 69 may include at least one of titanium (Ti), titanium nitride (TiN), copper (Cu), aluminum (Al), and tungsten (W).
  • each of the first electrode pads 67, second electrode pads 68, and third electrode pads 69 has a laminated structure of titanium and copper.
  • the material constituting one or two types of electrode pads among each of the first electrode pads 67, second electrode pads 68, and third electrode pads 69 may be different from the material constituting the remaining types of electrode pads.
  • each of the first electrode pads 67, each of the second electrode pads 68, and each of the third electrode pads 69 includes aluminum.
  • each of the first electrode pads 67, each of the second electrode pads 68, and each of the third electrode pads 69 exposed from the chip surface 61 has a thickness of 2 ⁇ m or more. Note that the thickness of each of the first electrode pads 67, each of the second electrode pads 68, and each of the third electrode pads 69 can be changed as desired.
  • the first electrode pads 67 are electrode pads electrically connected to the second chip 70 and the third chip 80.
  • the first electrode pads 67 are provided at a position closer to the second chip side surface 64 than the center of the X direction of the chip surface 61 in a plan view.
  • the first electrode pads 67 are arranged at the same position as each other in the X direction and spaced apart from each other in the Y direction.
  • the first electrode pads 67 can be divided into three first electrode pads 67 electrically connected to the second chip 70 and three first electrode pads 67 electrically connected to the third chip 80.
  • the three first electrode pads 67 electrically connected to the second chip 70 are arranged closer to the third chip side surface 65 on the chip surface 61.
  • the three first electrode pads 67 electrically connected to the third chip 80 are arranged closer to the fourth chip side surface 66 on the chip surface 61.
  • the second electrode pads 68 are electrode pads that are individually and electrically connected to the first terminals 12 to 17.
  • the second electrode pads 68 are provided at positions closer to the first chip side surface 63 than the center of the chip surface 61 in the X direction in a plan view.
  • the multiple third electrode pads 69 are electrode pads electrically connected to the first die pad 30. Each third electrode pad 69 has the same potential as the first die pad 30, i.e., the first ground potential.
  • the multiple third electrode pads 69 are provided on the end of the chip surface 61 closer to the fourth sealing side surface 96 in a planar view.
  • the multiple third electrode pads 69 are provided on the portion of the chip surface 61 closer to the first chip side surface 63 in a planar view.
  • the second chip 70 mounted on the second die pad 50A has a chip surface 71, a chip back surface (not shown) facing the opposite side to the chip surface 71 in the Z direction, and first to fourth chip side surfaces 73 to 76 connecting the chip surface 71 and the chip back surface.
  • the chip front surface 71 faces the side opposite to the second die pad 50A with respect to the second chip 70, and the chip back surface faces the side facing the second die pad 50A.
  • the first chip side surface 73 and the second chip side surface 74 constitute both end surfaces in the X direction of the second chip 70 in a plan view.
  • the first chip side surface 73 is the chip side surface on the side of the second chip 70 on which the first chip 60 (see FIG. 5) is arranged
  • the second chip side surface 74 is the chip side surface on the side of the second chip 70 on which the second terminals 41 to 43 are arranged.
  • the third chip side surface 75 and the fourth chip side surface 76 constitute both end surfaces in the Y direction of the second chip 70 in a plan view.
  • the third chip side surface 75 is the chip side surface closer to the third sealing side surface 95 of the sealing resin 90
  • the fourth chip side surface 76 is the chip side surface closer to the fourth sealing side surface 96.
  • the second chip 70 has a plurality of first electrode pads 77 (three in the first embodiment), a plurality of second electrode pads 78 (four in the first embodiment), and a plurality of third electrode pads 79 (three in the first embodiment).
  • Each of the first electrode pads 77, each of the second electrode pads 78, and each of the third electrode pads 79 are provided so as to be exposed from the chip surface 71.
  • Each of the first electrode pads 77, second electrode pads 78, and third electrode pads 79 may include at least one of titanium, titanium nitride, copper, aluminum, and tungsten.
  • each of the first electrode pads 77, second electrode pads 78, and third electrode pads 79 has a laminated structure of titanium and copper. Note that the material constituting one or two types of electrode pads among each of the first electrode pads 77, second electrode pads 78, and third electrode pads 79 may be different from the material constituting the remaining types of electrode pads.
  • each of the first electrode pads 77, each of the second electrode pads 78, and each of the third electrode pads 79 includes aluminum.
  • each of the first electrode pads 77, each of the second electrode pads 78, and each of the third electrode pads 79 exposed from the chip surface 71 has a thickness of 2 ⁇ m or more. Note that the thickness of each of the first electrode pads 77, each of the second electrode pads 78, and each of the third electrode pads 79 can be changed as desired.
  • the multiple first electrode pads 77 are electrode pads that are individually and electrically connected to three first electrode pads 67 (see FIG. 5) that are closer to the third chip side surface 65 among the multiple first electrode pads 67 of the first chip 60.
  • the multiple first electrode pads 77 are provided in a position closer to the first chip side surface 73 than the center in the X direction of the chip surface 71 in a plan view.
  • the multiple first electrode pads 77 are arranged at the same positions as each other in the X direction and spaced apart from each other in the Y direction.
  • the second electrode pads 78 are electrode pads that are individually and electrically connected to the second terminals 42 and 43.
  • the second electrode pads 78 are provided at positions closer to the fourth chip side surface 76 than the center of the chip surface 71 in the Y direction in a plan view.
  • the multiple third electrode pads 79 are electrode pads electrically connected to the second die pad 50A. Each third electrode pad 79 has the same potential as the second die pad 50A, i.e., the second ground potential.
  • the multiple third electrode pads 79 are provided at the ends of both ends in the Y direction of the chip surface 71 that are closer to the third sealing side surface 95 in a plan view.
  • the multiple third electrode pads 79 are arranged at the same positions as each other in the Y direction and spaced apart from each other in the X direction.
  • the third chip 80 mounted on the third die pad 50B has a chip surface 81, a chip back surface (not shown) facing the opposite side to the chip surface 81 in the Z direction, and first to fourth chip side surfaces 83 to 86 connecting the chip surface 81 and the chip back surface.
  • the chip front surface 81 faces the side opposite to the third die pad 50B with respect to the third chip 80, and the chip back surface faces the side facing the third die pad 50B.
  • the first chip side surface 83 and the second chip side surface 84 constitute both end surfaces in the X direction of the third chip 80 in a plan view.
  • the first chip side surface 83 is the chip side surface on the side of the third chip 80 on which the first chip 60 (see FIG. 5) is arranged
  • the second chip side surface 84 is the chip side surface on the side of the third chip 80 on which the third terminals 44 to 46 are arranged.
  • the third chip side surface 85 and the fourth chip side surface 86 constitute both end surfaces in the Y direction of the third chip 80 in a plan view.
  • the third chip side surface 85 is the chip side surface closer to the third sealing side surface 95 of the sealing resin 90
  • the fourth chip side surface 86 is the chip side surface closer to the fourth sealing side surface 96.
  • the third chip 80 has a plurality of first electrode pads 87 (three in the first embodiment), a plurality of second electrode pads 88 (four in the first embodiment), and a plurality of third electrode pads 89 (two in the first embodiment).
  • Each of the first electrode pads 87, each of the second electrode pads 88, and each of the third electrode pads 89 are provided so as to be exposed from the chip surface 81.
  • Each of the first electrode pads 87, second electrode pads 88, and third electrode pads 89 may include at least one of titanium, titanium nitride, copper, aluminum, and tungsten.
  • each of the first electrode pads 87, second electrode pads 88, and third electrode pads 89 has a laminated structure of titanium and copper. Note that the material constituting one or two types of electrode pads among each of the first electrode pads 87, second electrode pads 88, and third electrode pads 89 may be different from the material constituting the remaining types of electrode pads.
  • each of the first electrode pads 87, each of the second electrode pads 88, and each of the third electrode pads 89 includes aluminum.
  • each of the first electrode pads 87, each of the second electrode pads 88, and each of the third electrode pads 89 exposed from the chip surface 81 has a thickness of 2 ⁇ m or more. Note that the thickness of each of the first electrode pads 87, each of the second electrode pads 88, and each of the third electrode pads 89 can be changed as desired.
  • the multiple first electrode pads 87 are electrode pads that are individually and electrically connected to three of the multiple first electrode pads 67 on the first chip 60 that are closer to the fourth chip side surface 66.
  • the multiple first electrode pads 87 are provided in a position closer to the first chip side surface 83 than the center in the X direction of the chip surface 81 in a plan view.
  • the multiple first electrode pads 87 are arranged at the same positions as each other in the X direction and spaced apart from each other in the Y direction.
  • the second electrode pads 88 are electrode pads that are individually and electrically connected to the third terminals 45, 46.
  • the second electrode pads 88 are provided at positions closer to the fourth chip side surface 86 than the center of the chip surface 81 in the Y direction in a plan view.
  • the multiple third electrode pads 89 are electrode pads electrically connected to the third die pad 50B. Each third electrode pad 89 has the same potential as the third die pad 50B, i.e., the third ground potential.
  • the multiple third electrode pads 89 are provided at the ends of the chip surface 81 in the Y direction that are closer to the third sealing side surface 95 in a plan view.
  • the multiple third electrode pads 89 are arranged at the same positions as each other in the Y direction and spaced apart from each other in the X direction.
  • signal transmission device 10 includes inter-chip wires WA that individually connect first chip 60 to second chip 70 and third chip 80, first terminal wires WB that individually connect first chip 60 to first terminals 12 to 17, and first die pad wires WC that connect first chip 60 to first die pad 30.
  • Inter-chip wires WA, first terminal wires WB, and first die pad wires WC are sealed with sealing resin 90.
  • each inter-chip wire WA extends obliquely toward the third sealing side surface 95 as it moves from the first electrode pad 67 toward the first electrode pad 77.
  • the three inter-chip wires WA are parallel to each other in a planar view.
  • each inter-chip wire WA extends obliquely toward the fourth sealing side surface 96 as it moves from the first electrode pad 67 toward the first electrode pad 87.
  • the three inter-chip wires WA are parallel to each other in a planar view.
  • the multiple second electrode pads 68 of the first chip 60 and the first terminals 12 to 17 are individually connected by multiple (seven in the first embodiment) first terminal wires WB. This allows the first chip 60 and the first terminals 12 to 17 to be individually electrically connected.
  • Each of the first terminals 12 to 16 is individually connected to the multiple second electrode pads 68 by one first terminal wire WB.
  • the first terminal 17 is individually connected to the multiple second electrode pads 68 by two first terminal wires WB.
  • the first terminal wire WB is a bonding wire formed by a wire bonding device.
  • the bonded portion of the first terminal wire WB with the second electrode pad 68 is a first bond portion
  • the bonded portion with the first terminals 12 to 17 is a second bond portion.
  • the first terminal wire WB is connected to the first internal terminal portions 12B to 17B of the first terminals 12 to 17.
  • the wire connection portion 12BB of the first internal terminal portion 12B includes a side surface that intersects with the first terminal wire WB connected to the wire connection portion 12BB in a planar view. This side surface faces the first die pad 30 in a planar view.
  • the side surface of the wire connection portion 12BB constitutes the tip surface of the wire connection portion 12BB, and faces the curved concave surface 37A3 of the first recessed portion 37A of the first die pad 30 in the Y direction.
  • the first terminal wire WB is connected to the end of the wire connection portion 12BB of the first terminal 12 that is closer to the first chip 60.
  • the first terminal wire WB is connected to the protruding portion of the wire connection portion 12BB that protrudes from the first external electrode 12A in a planar view. In other words, the first terminal wire WB is connected to the portion of the wire connection portion 12BB that is closer to the first chip 60 than the first external electrode 12A in a planar view.
  • the first internal terminal portion 13B includes a side surface that intersects with the first terminal wire WB that connects to the first internal terminal portion 13B in a planar view. This side surface faces the first die pad 30 in a planar view.
  • the side surface of the first internal terminal portion 13B constitutes the tip surface of the first internal terminal portion 13B and faces the second recessed portion 37B of the first die pad 30 in the X direction.
  • the first terminal wire WB is connected to a portion of the first internal terminal portion 13B of the first terminal 13 that is closer to the first sealing side surface 93 than the first via 13C.
  • the first internal terminal portion 14B includes a side surface that intersects with the first terminal wire WB that connects to the first internal terminal portion 14B in a planar view. This side surface faces the first die pad 30 in a planar view.
  • the side surface of the first internal terminal portion 14B constitutes an opposing surface of the first terminal portion 14BA of the first internal terminal portion 14B that faces the first die pad 30 in the X direction.
  • the first terminal wire WB is connected to a protruding portion of the first terminal portion 14BA of the first internal terminal portion 14B that protrudes from the first external electrode 14A in a planar view.
  • the first internal terminal portion 15B includes a side surface that intersects with the first terminal wire WB that connects to the first internal terminal portion 15B in a planar view. This side surface faces the first die pad 30 in a planar view.
  • the side surface of the first internal terminal portion 15B constitutes the tip surface of the first internal terminal portion 15B and faces the bottom surface 37C2 of the third recess portion 37C of the first die pad 30 in the X direction.
  • the first terminal wire WB is connected to a portion of the first internal terminal portion 15B of the first terminal 15 that is closer to the first sealing side surface 93 than the first via 15C.
  • the first terminal wire WB that connects to the first internal terminal portion 16B is connected to the protruding portion of the first internal terminal portion 16B that protrudes from the first external electrode 16A in a planar view.
  • the first terminal wire WB is connected to the first internal terminal portion 16B that is closer to the first chip 60 than the first external electrode 16A in the direction in which the first terminal wire WB extends in a planar view.
  • the wire connection portion 17BC of the first internal terminal portion 17B includes a side surface that intersects with the first terminal wire WB that connects to the wire connection portion 17BC in a planar view. This side surface faces the first die pad 30 in a planar view. In the first embodiment, the side surface of the wire connection portion 17BC faces the curved concave surface 37C1 of the third recessed portion 37C of the first die pad 30 in the X direction.
  • the first terminal wire WB is connected to a portion of the first terminal 17 that is closer to the first chip 60 than the first external electrode 17A in a planar view.
  • the multiple third electrode pads 69 of the first chip 60 and the first die pad 30 are individually connected by multiple (two in the first embodiment) first die pad wires WC. This electrically connects the first chip 60 and the first die pad 30. In other words, the multiple third electrode pads 69 are at the first ground potential. It can also be said that the multiple third electrode pads 69 are electrically connected to the first terminal 11.
  • the wire WC for the first die pad is a bonding wire formed by a wire bonding device.
  • the bond portion of the wire WC for the first die pad with the third electrode pad 69 is a first bond portion
  • the bond portion of the wire WC for the first die pad 30 is a second bond portion.
  • the second bond portion is formed in a portion of the first die pad 30 closer to the second side surface 34 than the first chip 60.
  • the signal transmission device 10 includes second terminal wires WD that individually connect the second chip 70 to the multiple second terminals 42, 43, and second die pad wires WE that connect the second chip 70 to the second die pad 50A.
  • the second terminal wires WD and the second die pad wires WE are sealed with sealing resin 90.
  • the second electrode pads 78 of the second chip 70 and the second terminals 42, 43 are individually connected by a plurality of second terminal wires WD (four in the first embodiment). This electrically connects the second chip 70 and the second terminals 42, 43 individually. Each of the second terminals 42, 43 is individually connected to the second electrode pads 78 by two second terminal wires WD.
  • the second terminal wire WD is a bonding wire formed by a wire bonding device.
  • the bonded portion of the second terminal wire WD with the second electrode pad 78 is a first bond portion
  • the bonded portions of the second terminals 42, 43 are second bond portions.
  • the second terminal wire WD is connected to the second internal terminal portions 42B, 43B of the second terminals 42, 43.
  • the second internal terminal portion 42B includes a side surface that intersects with the second terminal wire WD that connects to the second internal terminal portion 42B in a planar view. This side surface faces the second die pad 50A in a planar view.
  • the side surface of the second internal terminal portion 42B forms the tip surface of the second internal terminal portion 42B, and faces the curved concave surface of the first recessed portion 57AA of the second die pad 50A in the X direction.
  • the second internal terminal portion 43B includes a side surface that intersects with the second terminal wire WD that connects to the second internal terminal portion 43B in a planar view. This side surface faces the second die pad 50A in a planar view.
  • the side surface of the second internal terminal portion 43B constitutes the tip surface of the second internal terminal portion 43B, and faces the curved concave surface of the second recessed portion 57AB of the second die pad 50A in the X direction.
  • the multiple third electrode pads 79 of the second chip 70 and the second die pad 50A are individually connected by multiple (three in the first embodiment) second die pad wires WE. This electrically connects the second chip 70 and the second die pad 50A. Therefore, the third electrode pad 79 of the second chip 70 is at the second ground potential. It can also be said that the third electrode pad 79 is electrically connected to the second terminal 41.
  • the second die pad wires WE are connected to a portion of the second die pad 50A that is closer to the third side surface 53A than the second chip 70.
  • the signal transmission device 10 includes third terminal wires WF that individually connect the third chip 80 to the multiple third terminals 45, 46, and third die pad wires WG that connect the third chip 80 to the third die pad 50B.
  • the third terminal wires WF and the third die pad wires WG are sealed with sealing resin 90.
  • the multiple second electrode pads 88 of the third chip 80 and the third terminals 45, 46 are individually connected by multiple (four in the first embodiment) third terminal wires WF. This allows the third chip 80 and the third terminals 45, 46 to be individually electrically connected. Each of the third terminals 45, 46 is individually connected to the multiple second electrode pads 88 by two third terminal wires WF.
  • the third terminal wire WF is a bonding wire formed by a wire bonding device.
  • the bonded portion of the third terminal wire WF to the second electrode pad 88 is a first bond portion, and the bonded portions of the third terminals 45, 46 are second bond portions.
  • the third terminal wire WF is connected to the third internal terminal portions 45B, 46B of the third terminals 45, 46.
  • the third internal terminal portion 45B includes a side surface that intersects with the third terminal wire WF that connects to the third internal terminal portion 45B in a planar view. This side surface faces the third die pad 50B in a planar view.
  • the side surface of the third internal terminal portion 45B constitutes the tip surface of the third internal terminal portion 45B, and faces the curved concave surface of the third recessed portion 57BA of the third die pad 50B in the X direction.
  • the third internal terminal portion 46B includes a side surface that intersects with the third terminal wire WF that connects to the third internal terminal portion 46B in a planar view. This side surface faces the third die pad 50B in a planar view.
  • the side surface of the third internal terminal portion 46B constitutes the tip surface of the third internal terminal portion 46B, and faces the curved concave surface of the fourth recessed portion 57BB of the third die pad 50B in the X direction.
  • the third electrode pads 89 of the third chip 80 and the third die pad 50B are individually connected by multiple (two in the first embodiment) third die pad wires WG. This electrically connects the third chip 80 and the third die pad 50B. Therefore, the third electrode pad 89 of the third chip 80 is at the third ground potential. It can also be said that the third electrode pad 89 is electrically connected to the third terminal 44.
  • the third die pad wires WG are connected to a portion of the third die pad 50B closer to the fifth side surface 53B than the third chip 80.
  • Each of the wire WE for the second die pad and the wire WG for the third die pad is a bonding wire formed by a wire bonding device.
  • the bond portion of the wire WE for the second die pad to the third electrode pad 79 is the first bond portion
  • the bond portion of the wire WE for the second die pad 50A is the second bond portion.
  • the bond portion of the wire WG for the third die pad to the third electrode pad 89 is the first bond portion
  • the bond portion of the wire WG for the third die pad to the third die pad 50B is the second bond portion.
  • the material constituting the inter-chip wire WA is different from the material constituting each of the first terminal wire WB, the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG.
  • the first terminal wire WB, the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG are each made of the same material.
  • the inter-chip wire WA is made of a material containing gold.
  • Each of the first terminal wire WB, the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG is made of a material containing copper.
  • each of the first terminal wire WB, the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG is made of a copper wire whose surface is coated with palladium (Pd). This can improve oxidation resistance and corrosion resistance compared to a copper wire whose surface is not coated with palladium.
  • each of the first terminal wire WB, the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG may be made of a material containing aluminum.
  • the circuit configuration of the signal transmission device 10 of the first embodiment will be described with reference to FIG.
  • the signal transmission device 10 includes a first circuit 500, a second circuit 520, and a third circuit 530, as well as a first transformer 111 and a second transformer 112.
  • the first chip 60 includes the first circuit 500, the first transformer 111, and the second transformer 112
  • the second chip 70 includes the second circuit 520
  • the third chip 80 includes the third circuit 530.
  • the first transformer 111 is configured to insulate the first circuit 500 from the second circuit 520 and to enable signal exchange between the first circuit 500 and the second circuit 520.
  • the second transformer 112 is configured to insulate the first circuit 500 from the third circuit 530 and to enable signal exchange between the first circuit 500 and the third circuit 530.
  • the signal transmission device 10 also includes first terminals P1 to P6, which are external terminals electrically connected to the first circuit 500, and second terminals Q1 to Q6, which are external terminals electrically connected to the second circuit 520 and the third circuit 530.
  • the first terminal P1 is a power supply terminal (VDDI), the first terminal P2 is a regulator terminal (SLDO), the first terminal P3 is a signal input terminal (PWM), the first terminal P4 is an unused terminal (DISABLE), the first terminal P5 is a timing adjustment terminal (TNEG), and the first terminal P6 is a ground terminal (GNDI).
  • the first terminal P1 corresponds to the first terminal 17
  • the first terminal P2 corresponds to the first terminal 14
  • the first terminal P3 corresponds to the first terminal 12
  • the first terminal P4 corresponds to the first terminal 15
  • the first terminal P5 corresponds to the first terminal 16
  • the first terminal P6 corresponds to the first terminal 11.
  • the first terminal 13 is, for example, a test terminal.
  • the second terminal Q1 is a ground terminal (GNDG), the second terminal Q2 is an output terminal (OUTG), the second terminal Q3 is a power terminal (VDDG), the second terminal Q4 is a ground terminal (GNDS), the second terminal Q5 is an output terminal (OUTS), and the second terminal Q6 is a power terminal (VDDS).
  • the second terminal Q1 corresponds to the second terminal 41
  • the second terminal Q2 corresponds to the second terminal 42
  • the second terminal Q3 corresponds to the second terminal 43
  • the second terminal Q4 corresponds to the third terminal 44
  • the second terminal Q5 corresponds to the third terminal 45
  • the second terminal Q6 corresponds to the third terminal 46.
  • the first circuit 500 includes a first transmitting unit 501, a second transmitting unit 502, a logic unit 503, an LDO (Low Dropout) unit 504, a UVLO (Under Voltage Lock Out) unit 505, a delay unit 506, Schmitt triggers 507 and 508, and resistors 509 and 510.
  • LDO Low Dropout
  • UVLO Under Voltage Lock Out
  • the first terminal P1 is electrically connected to the UVLO unit 505 and the LDO unit 504, the first terminal P2 is electrically connected to the LDO unit 504, the first terminals P3 and P4 are electrically connected to the logic unit 503, and the first terminal P5 is electrically connected to the delay unit 506.
  • the LDO unit 504 is electrically connected to the UVLO unit 505.
  • Each of the UVLO unit 505, the delay unit 506, the first transmission unit 501, and the second transmission unit 502 is electrically connected to the logic unit 503.
  • the first transmission unit 501 is electrically connected to the first coil of the first transformer 111.
  • the first transmission unit 501 is configured to transmit the PWM signal input from the logic unit 503 to the second circuit 520 using the first transformer 111.
  • the second transmitting unit 502 is electrically connected to the first coil of the second transformer 112.
  • the second transmitting unit 502 is configured to transmit the PWM signal input from the logic unit 503 to the third circuit 530 using the second transformer 112.
  • the logic unit 503 is configured to exchange various signals with an external control device (not shown) of the signal transmission device 10 via the first terminals P3 to P5, and to exchange various signals with the second circuit 520 and the third circuit 530 using the first transmission unit 501 and the second transmission unit 502.
  • a Schmitt trigger 507 and a resistor 509 are provided in the conductive path between the first terminal P3 and the logic unit 503.
  • the input terminal of the Schmitt trigger 507 is electrically connected to the first terminal P3, and the output terminal of the Schmitt trigger 507 is electrically connected to the logic unit 503.
  • the resistor 509 is, for example, a pull-down resistor.
  • the first terminal of the resistor 509 is electrically connected between the first terminal P3 and the input terminal of the Schmitt trigger 507 in the conductive path, and the second terminal of the resistor 509 is electrically connected to the first terminal P6.
  • a Schmitt trigger 508 and a resistor 510 are provided in the conductive path between the first terminal P4 and the logic unit 503.
  • the input terminal of the Schmitt trigger 508 is electrically connected to the first terminal P4, and the output terminal of the Schmitt trigger 508 is electrically connected to the logic unit 503.
  • the resistor 510 is, for example, a pull-down resistor.
  • the first terminal of the resistor 510 is electrically connected between the first terminal P4 and the input terminal of the Schmitt trigger 508 in the conductive path, and the second terminal of the resistor 510 is electrically connected to the first terminal P6.
  • the LDO unit 504 is, for example, a shunt regulator, and is configured so that the voltage between the first terminal P1 and the first terminal P6 becomes a preset reference voltage.
  • the UVLO unit 505 stops the operation of the logic unit 503 when the voltage of the control power supply electrically connected to the first terminal P1 falls below a threshold voltage, thereby suppressing the occurrence of a malfunction.
  • the second circuit 520 includes a first receiving unit 521 , a logic unit 522 , a UVLO unit 523 , buffer circuits 524 and 525 , switching elements 526 and 527 , and a resistor 528 .
  • the second terminals Q1 and Q2 are electrically connected to the logic unit 522, and the second terminal Q1 is electrically connected to the UVLO unit 523.
  • the UVLO unit 523 and the first receiving unit 521 are electrically connected to the logic unit 522.
  • the first receiving unit 521 is electrically connected to the second coil of the first transformer 111.
  • the first receiving unit 521 is configured to receive a PWM signal from the first transmitting unit 501 via the first transformer 111 and output the received PWM signal to the logic unit 522.
  • the UVLO unit 523 stops the operation of the logic unit 522 when the voltage of the control power supply electrically connected to the second terminal Q3 falls below a threshold voltage, thereby suppressing the occurrence of a malfunction.
  • the logic unit 522 is configured to control the switching elements 526 and 527 individually. More specifically, the logic unit 522 is electrically connected to the gates of the switching elements 526 and 527 individually.
  • a buffer circuit 524 is provided between the logic unit 522 and the gate of the switching element 526. An input terminal of the buffer circuit 524 is electrically connected to the logic unit 522, and an output terminal of the buffer circuit 524 is electrically connected to the gate of the switching element 526.
  • a buffer circuit 525 is provided between the logic unit 522 and the gate of the switching element 527. An input terminal of the buffer circuit 525 is electrically connected to the logic unit 522, and an output terminal of the buffer circuit 525 is electrically connected to the gate of the switching element 527.
  • Switching element 526 is a p-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and switching element 527 is an n-channel MOSFET.
  • the source of switching element 526 is electrically connected to second terminal Q3, and the drain of switching element 526 is electrically connected to the drain of switching element 527.
  • the source of switching element 527 is electrically connected to second terminal Q1.
  • the node between the drain of switching element 526 and the drain of switching element 527 is electrically connected to second terminal Q2.
  • resistor 528 is provided between the gate and drain of switching element 526.
  • the third circuit 530 includes a second receiving unit 531 , a logic unit 532 , a UVLO unit 533 , buffer circuits 534 and 535 , switching elements 536 and 537 , and a resistor 538 .
  • the second terminals Q4 and Q5 are electrically connected to the logic unit 532, and the second terminal Q6 is electrically connected to the UVLO unit 533.
  • the UVLO unit 533 and the second receiving unit 531 are electrically connected to the logic unit 532.
  • the second receiving unit 531 is electrically connected to the second coil of the second transformer 112.
  • the second receiving unit 531 is configured to receive a PWM signal from the second transmitting unit 502 via the second transformer 112 and output the received PWM signal to the logic unit 532.
  • the UVLO unit 533 stops the operation of the logic unit 532 when the voltage of the control power supply electrically connected to the second terminal Q6 falls below a threshold voltage, thereby suppressing the occurrence of a malfunction.
  • the logic unit 532 is configured to control the switching elements 536 and 537 individually. More specifically, the logic unit 532 is electrically connected to the gates of the switching elements 536 and 537 individually.
  • a buffer circuit 534 is provided between the logic unit 532 and the gate of the switching element 536. An input terminal of the buffer circuit 534 is electrically connected to the logic unit 532, and an output terminal of the buffer circuit 534 is electrically connected to the gate of the switching element 536.
  • a buffer circuit 535 is provided between the logic unit 532 and the gate of the switching element 537. An input terminal of the buffer circuit 535 is electrically connected to the logic unit 532, and an output terminal of the buffer circuit 535 is electrically connected to the gate of the switching element 537.
  • Switching element 536 is a p-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and switching element 537 is an n-channel MOSFET.
  • the source of switching element 536 is electrically connected to second terminal Q6, and the drain of switching element 536 is electrically connected to the drain of switching element 537.
  • the source of switching element 537 is electrically connected to second terminal Q4.
  • the node between the drain of switching element 536 and the drain of switching element 537 is electrically connected to second terminal Q5.
  • resistor 538 is provided between the gate and drain of switching element 536.
  • FIGS. 10 to 13 show a schematic planar structure of an example of the internal configuration of the first chip 60.
  • FIGS. 14 to 19 show a schematic cross-sectional structure of an example of the internal configuration of the first chip 60. Note that to make the drawings easier to understand, hatched lines have been omitted from the schematic cross-sectional structure of the first chip 60 in FIG. 14.
  • Fig. 10 shows a schematic planar structure of an example of the internal configuration close to the chip front surface 61 of the first chip 60.
  • Fig. 11 is an enlarged view of an insulating transformer region 110, described later, in Fig. 10.
  • Fig. 12 shows a schematic planar structure of an example of the internal structure close to the chip back surface 62 of the first chip 60.
  • Fig. 13 is an enlarged view of the insulating transformer region 110 in Fig. 12.
  • the first chip 60 has an insulating transformer region 110 and a circuit region 120 , and a peripheral guard ring 100 that is connected to the insulating transformer region 110 and surrounds the circuit region 120 .
  • the insulating transformer region 110 is a region that electrically insulates the circuit region 120 from the second chip 70 while allowing transmission of signals between the circuit region 120 and the second chip 70 and the third chip 80.
  • the insulating transformer region 110 is formed closer to the second chip side surface 64 with respect to the center of the first chip 60 in the X direction in a plan view. In other words, the insulating transformer region 110 is formed in a region of the first chip 60 that is closer to the second chip 70 and the third chip 80 (see FIG. 3 for both) in a plan view.
  • the insulating transformer region 110 extends over substantially the entire first chip 60 in the Y direction.
  • the circuit area 120 is formed with the components of the first circuit 500 in FIG. 9 other than the first transformer 111 and the second transformer 112. These components include a first transmission unit 501, a second transmission unit 502, a logic unit 503, an LDO unit 504, and a UVLO unit 505.
  • the components of the first circuit 500 other than the first transformer 111 and the second transformer 112 may be referred to as “multiple first function units” and “multiple circuit elements.”
  • a plurality of second electrode pads 68 and a plurality of third electrode pads 69 are formed in the circuit region 120.
  • the plurality of second electrode pads 68 are electrically connected to at least one of the plurality of first function units and the plurality of circuit elements.
  • the plurality of third electrode pads 69 are electrically connected to the plurality of circuit elements.
  • a first transformer 111 and a second transformer 112 are formed in the insulating transformer region 110.
  • the first transformer 111 and the second transformer 112 are arranged at the same position in the X direction and spaced apart from each other in the Y direction.
  • the first transformer 111 is arranged closer to the third chip side surface 65 in the insulating transformer region 110
  • the second transformer 112 is arranged closer to the fourth chip side surface 66 in the insulating transformer region 110.
  • the first transformer 111 includes a first front side coil 111A and a first back side coil 111B, and a second front side coil 112A and a second back side coil 112B.
  • the second transformer 112 includes a third front side coil 113A and a third back side coil 113B, and a fourth front side coil 114A and a fourth back side coil 114B.
  • the first to fourth surface side coils 111A to 114A are arranged at the same positions in the X direction and spaced apart from each other in the Y direction.
  • the first to fourth surface side coils 111A to 114A are arranged in the following order from the third chip side surface 65 to the fourth chip side surface 66: first surface side coil 111A, second surface side coil 112A, third surface side coil 113A, and fourth surface side coil 114A.
  • the first to fourth back side coils 111B to 114B are arranged at the same positions in the X direction and spaced apart from each other in the Y direction.
  • the first to fourth back side coils 111B to 114B are arranged in the following order from the third chip side surface 65 to the fourth chip side surface 66: first back side coil 111B, second back side coil 112B, third back side coil 113B, and fourth back side coil 114B.
  • first surface side coil 111A, the second surface side coil 112A, the third surface side coil 113A, and the fourth surface side coil 114A are arranged at the same position in the Z direction.
  • the first back side coil 111B, the second back side coil 112B, the third back side coil 113B, and the fourth back side coil 114B are arranged at the same position in the Z direction.
  • Each of the first to fourth front side coils 111A to 114A and the first to fourth back side coils 111B to 114B may contain at least one of titanium, titanium nitride, copper, aluminum, and tungsten.
  • the first to fourth front side coils 111A to 114A contain copper
  • the first to fourth back side coils 111B to 114B contain aluminum.
  • the first to fourth front side coils 111A to 114A have a layered structure of titanium and copper
  • the first to fourth back side coils 111B to 114B have a layered structure of titanium nitride and aluminum.
  • a plurality of first electrode pads 67 are formed in the insulating transformer region 110.
  • the plurality of first electrode pads 67 are arranged at the same positions in the X direction and spaced apart from each other in the Y direction.
  • the plurality of first electrode pads 67 include six first electrode pads 67A to 67F.
  • the first electrode pads 67A to 67F are arranged in the order of first electrode pads 67A, 67B, 67C, 67D, 67E, and 67F from the third chip side surface 65 to the fourth chip side surface 66.
  • the first surface side coil 111A includes a first coil portion 111A1 that is spiral-shaped in a plan view, a first outer coil end portion 111A2, and a first inner coil end portion 111A3.
  • the first outer coil end portion 111A2 constitutes the end portion in the winding direction of the outermost periphery of the first coil portion 111A1
  • the first inner coil end portion 111A3 constitutes the end portion in the winding direction of the innermost periphery of the first coil portion 111A1.
  • the second surface side coil 112A includes a second coil portion 112A1 that is spiral-shaped in a plan view, a second outer coil end portion 112A2, and a second inner coil end portion 112A3.
  • the second outer coil end portion 112A2 constitutes the end portion in the winding direction at the outermost periphery of the second coil portion 112A1
  • the second inner coil end portion 112A3 constitutes the end portion in the winding direction at the innermost periphery of the second coil portion 112A1.
  • the first electrode pad 67A is disposed in an inner space including the winding center of the first coil portion 111A1 in a plan view. It can be said that the first electrode pad 67A is located more inward than the first coil portion 111A1.
  • the first electrode pad 67A is connected to the first inner coil end 111A3. Therefore, it can be said that the first electrode pad 67A is electrically connected to the first end of the first surface side coil 111A.
  • the first electrode pad 67B is disposed between the first surface side coil 111A and the second surface side coil 112A in the Y direction in a plan view.
  • the first electrode pad 67B is connected to the first outer coil end 111A2 of the first surface side coil 111A.
  • the first electrode pad 67B is also connected to the second outer coil end 112A2 of the second surface side coil 112A. Therefore, it can be said that the first electrode pad 67B is electrically connected to the second end of the first surface side coil 111A and the second end of the second surface side coil 112A.
  • the first electrode pad 67C is disposed in an inner space including the winding center of the second coil portion 112A1 in a plan view. It can be said that the first electrode pad 67C is located more inward than the second coil portion 112A1.
  • the first electrode pad 67C is connected to the second inner coil end portion 112A3. Therefore, it can be said that the first electrode pad 67C is electrically connected to the first end portion of the second surface side coil 112A.
  • the third surface side coil 113A includes a third coil portion 113A1 that is spiral-shaped in a plan view, a third outer coil end portion 113A2, and a third inner coil end portion 113A3.
  • the third outer coil end portion 113A2 constitutes the end portion in the winding direction at the outermost periphery of the third coil portion 113A1
  • the third inner coil end portion 113A3 constitutes the end portion in the winding direction at the innermost periphery of the third coil portion 113A1.
  • the fourth surface side coil 114A includes a fourth coil portion 114A1 that is spiral-shaped in a plan view, a fourth outer coil end portion 114A2, and a fourth inner coil end portion 114A3.
  • the fourth outer coil end portion 114A2 constitutes the end portion in the winding direction of the outermost periphery of the fourth coil portion 114A1
  • the fourth inner coil end portion 114A3 constitutes the end portion in the winding direction of the innermost periphery of the fourth coil portion 114A1.
  • the first electrode pad 67D is disposed in an inner space including the winding center of the third coil portion 113A1 in a plan view. It can be said that the first electrode pad 67D is located more inward than the third coil portion 113A1. The first electrode pad 67D is connected to the third inner coil end portion 113A3. Therefore, it can be said that the first electrode pad 67D is electrically connected to the first end portion of the third surface side coil 113A.
  • the first electrode pad 67E is disposed between the third surface side coil 113A and the fourth surface side coil 114A in the Y direction in a plan view.
  • the first electrode pad 67E is connected to the third outer coil end 113A2 of the third surface side coil 113A.
  • the first electrode pad 67E is also connected to the fourth outer coil end 114A2 of the fourth surface side coil 114A. Therefore, it can be said that the first electrode pad 67E is electrically connected to the second end of the third surface side coil 113A and the second end of the fourth surface side coil 114A.
  • the first electrode pad 67F is disposed in an inner space including the winding center of the fourth coil portion 114A1 in a plan view. It can be said that the first electrode pad 67F is located more inward than the fourth coil portion 114A1. The first electrode pad 67F is connected to the fourth inner coil end portion 114A3. Therefore, it can be said that the first electrode pad 67F is electrically connected to the first end portion of the fourth surface side coil 114A.
  • the first to fourth surface side coils 111A to 114A have the same number of turns.
  • the winding direction of the first surface side coil 111A and the winding direction of the second surface side coil 112A are opposite to each other, and the winding direction of the third surface side coil 113A and the winding direction of the fourth surface side coil 114A are opposite to each other.
  • the winding direction of the first surface side coil 111A and the winding direction of the third surface side coil 113A are the same direction, and the winding direction of the second surface side coil 112A and the winding direction of the fourth surface side coil 114A are the same direction.
  • the first back side coil 111B is arranged opposite the first front side coil 111A (see FIG. 11) in the Z direction.
  • the first back side coil 111B includes a first coil portion 111B1 that is spiral in plan view, a first outer coil end 111B2, and a first inner coil end 111B3.
  • the first outer coil end 111B2 constitutes the end of the first coil portion 111B1 in the winding direction at the outermost periphery
  • the first inner coil end 111B3 constitutes the end of the first coil portion 111B1 in the winding direction at the innermost periphery.
  • the first outer coil end 111B2 is connected to a first connection wiring 118A that extends in the X direction.
  • the first connection wiring 118A is electrically connected to the first transmission unit 501 (see FIG. 9) of the circuit area 120 (see FIG. 10).
  • the first inner coil end 111B3 is connected to a first wiring not shown.
  • the first wiring is electrically connected to the first transmission unit 501 of the circuit area 120.
  • the second back side coil 112B is arranged opposite the second front side coil 112A (see FIG. 11) in the Z direction.
  • the second back side coil 112B includes a second coil portion 112B1 that is spiral in plan view, a second outer coil end 112B2, and a second inner coil end 112B3.
  • the second outer coil end 112B2 constitutes the end of the second coil portion 112B1 in the winding direction at the outermost periphery
  • the second inner coil end 112B3 constitutes the end of the second coil portion 112B1 in the winding direction at the innermost periphery.
  • the second outer coil end 112B2 is connected to the second connection wiring 118B that extends in the X direction.
  • the second connection wiring 118B is arranged in a position adjacent to the first connection wiring 118A in the Y direction.
  • the second connection wiring 118B is arranged closer to the second back side coil 112B than the first connection wiring 118A.
  • the second connection wiring 118B is electrically connected to the first transmission unit 501 of the circuit area 120.
  • the second inner coil end 112B3 is connected to a second wiring (not shown).
  • the second wiring is electrically connected to the first transmission unit 501 of the circuit area 120.
  • the third back side coil 113B is arranged opposite the third front side coil 113A (see FIG. 11) in the Z direction.
  • the third back side coil 113B includes a third coil portion 113B1 that is spiral in plan view, a third outer coil end 113B2, and a third inner coil end 113B3.
  • the third outer coil end 113B2 constitutes the end of the third coil portion 113B1 in the winding direction at the outermost part
  • the third inner coil end 113B3 constitutes the end of the third coil portion 113B1 in the winding direction at the innermost part.
  • the third outer coil end 113B2 is connected to a third connection wiring 118C that extends in the X direction.
  • the third connection wiring 118C is electrically connected to the second transmission unit 502 (see FIG. 9) of the circuit area 120.
  • the third inner coil end 113B3 is connected to a third wiring not shown.
  • the third wiring is electrically connected to the second transmission unit 502 of the circuit area 120.
  • the fourth back side coil 114B is arranged opposite the fourth front side coil 114A (see FIG. 11) in the Z direction.
  • the fourth back side coil 114B includes a fourth coil portion 114B1 that is spiral in plan view, a fourth outer coil end 114B2, and a fourth inner coil end 114B3.
  • the fourth outer coil end 114B2 constitutes the end of the fourth coil portion 114B1 in the winding direction at the outermost part
  • the fourth inner coil end 114B3 constitutes the end of the fourth coil portion 114B1 in the winding direction at the innermost part.
  • the fourth outer coil end 114B2 is connected to a fourth connection wiring 118D that extends in the X direction.
  • the fourth connection wiring 118D is arranged in a position adjacent to the third connection wiring 118C in the Y direction.
  • the fourth connection wiring 118D is arranged closer to the fourth back side coil 114B than the third connection wiring 118C.
  • the fourth connection wiring 118D is electrically connected to the second transmission unit 502 of the circuit area 120.
  • the fourth inner coil end 114B3 is connected to a fourth wiring (not shown).
  • the fourth wiring is electrically connected to the second transmission unit 502 of the circuit area 120.
  • the number of turns of the first to fourth back side coils 111B to 114B are equal to each other.
  • the winding direction of the first back side coil 111B and the winding direction of the second back side coil 112B are opposite to each other, and the winding direction of the third back side coil 113B and the winding direction of the fourth back side coil 114B are opposite to each other.
  • the winding direction of the first back side coil 111B and the winding direction of the third back side coil 113B are the same direction, and the winding direction of the second back side coil 112B and the winding direction of the fourth back side coil 114B are the same direction.
  • the number of turns of the first to fourth back side coils 111B to 114B is equal to the number of turns of the first to fourth front side coils 111A to 114A.
  • a surface side guard ring 115 is formed in the insulating transformer region 110, surrounding the first to fourth surface side coils 111A to 114A and the first electrode pads 67A to 67F in a plan view.
  • the shape of the surface side guard ring 115 in a plan view is a track shape.
  • a back side guard ring 116 is formed in the insulating transformer region 110 to surround the first to fourth back side coils 111B to 114B in a plan view.
  • the shape of the back side guard ring 116 in a plan view is a track shape.
  • the shape and size of the back side guard ring 116 are the same as those of the front side guard ring 115.
  • the back side guard ring 116 is formed at a position that overlaps with the front side guard ring 115.
  • Vias 117 are formed to connect front-side guard ring 115 and back-side guard ring 116. Vias 117 are positioned so as to overlap both front-side guard ring 115 and back-side guard ring 116 in plan view.
  • the circuit region 120 is provided with a plurality of wiring layers 121.
  • the plurality of wiring layers 121 include a wiring layer that electrically connects the plurality of first functional units, and a wiring layer that electrically connects the plurality of functional units to the first transformer 111 and the second transformer 112 of the insulating transformer region 110.
  • the plurality of first functional units are formed in a position in the circuit region 120 closer to the chip back surface 62 (see FIG. 14) in the Z direction than the plurality of wiring layers 121.
  • the plurality of first functional units are formed in the same position in the Z direction as the first to fourth back surface side coils 111B to 114B. Note that the position in the Z direction at which the plurality of first functional units are formed can be changed as desired.
  • the peripheral guard ring 100 includes a front-side peripheral guard ring 101 and a back-side peripheral guard ring 102 .
  • the front-side outer periphery guard ring 101 is connected to the front-side guard ring 115. More specifically, the front-side outer periphery guard ring 101 is connected to both ends of the front-side guard ring 115 in the Y direction.
  • the front-side outer periphery guard ring 101 includes a first portion extending in the X direction at a position adjacent to the third chip side surface 65 in the Y direction in a plan view, a second portion continuing from the first portion and extending in the Y direction at a position adjacent to the first chip side surface 63 in the X direction, and a third portion continuing from the second portion and extending in the X direction at a position adjacent to the fourth chip side surface 66 in the Y direction.
  • the front-side outer periphery guard ring 101 further includes a first connection portion extending in the Y direction from the first portion toward the front-side guard ring 115 and connected to the front-side guard ring 115, and a second connection portion extending in the Y direction from the third portion toward the front-side guard ring 115 and connected to the front-side guard ring 115. In this manner, the front-side outer peripheral guard ring 101 is electrically connected to the front-side guard ring 115 .
  • the rear outer periphery guard ring 102 is connected to the rear guard ring 116. More specifically, the rear outer periphery guard ring 102 is connected to both ends of the rear guard ring 116 in the Y direction.
  • the rear outer periphery guard ring 102 includes a first portion extending in the X direction at a position adjacent to the third chip side surface 65 in the Y direction in a plan view, a second portion continuing from the first portion and extending in the Y direction at a position adjacent to the first chip side surface 63 in the X direction, and a third portion continuing from the second portion and extending in the X direction at a position adjacent to the fourth chip side surface 66 in the Y direction.
  • the rear outer periphery guard ring 102 further includes a first connection portion extending in the Y direction from the first portion toward the rear guard ring 116 and connected to the rear guard ring 116, and a second connection portion extending in the Y direction from the third portion toward the rear guard ring 116 and connected to the rear guard ring 116.
  • the rear surface outer peripheral guard ring 102 is electrically connected to the rear surface outer peripheral guard ring 116.
  • the shape and size of the rear surface outer peripheral guard ring 102 in a plan view are the same as those of the front surface outer peripheral guard ring 101.
  • the rear surface outer peripheral guard ring 102 is disposed at a position that overlaps with the front surface outer peripheral guard ring 101 in a plan view.
  • the first chip 60 has multiple peripheral vias that connect the front-side peripheral guard ring 101 and the back-side peripheral guard ring 102.
  • the front-side peripheral guard ring 101 and the back-side peripheral guard ring 102 are electrically connected by the multiple peripheral vias.
  • Each peripheral via extends in the Z direction.
  • a cross-sectional structure of the insulating transformer region 110 will be described as an example of the internal configuration of the first chip 60. Since the first transformer 111 and the second transformer 112 have the same configuration in the insulating transformer region 110, the configuration of the first transformer 111 will be described in detail below, and a detailed description of the second transformer 112 will be omitted.
  • FIG. 14 shows a cross-sectional structure of a portion of the first transformer 111 cut along line F14-F14 in FIG. 10.
  • FIG. 15 is an enlarged view of a portion of the first transformer 111 in FIG. 14.
  • FIG. 16 is an enlarged view of the F16 portion of the first front side coil 111A of the first transformer 111 in FIG. 15, and
  • FIG. 17 is an enlarged view of the F17 portion of the first back side coil 111B of the first transformer 111 in FIG. 15. Note that hatched lines have been omitted in FIG. 14 to make the drawing easier to understand.
  • the first chip 60 has the above-mentioned substrate 130 and an element insulating layer 150 formed on the substrate 130 .
  • the substrate 130 is formed of, for example, a semiconductor substrate.
  • the substrate 130 is a semiconductor substrate formed of a material containing silicon (Si).
  • the substrate 130 may use a wide band gap semiconductor or a compound semiconductor as a semiconductor substrate.
  • the substrate 130 may use an insulating substrate formed of a material containing glass, or an insulating substrate formed of a material containing ceramics such as alumina.
  • the wide band gap semiconductor is a semiconductor substrate having a band gap of 2.0 eV or more.
  • the wide band gap semiconductor may be any one of silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga 2 O 3 ).
  • the compound semiconductor may be a III-V group compound semiconductor.
  • the compound semiconductor may include at least one of aluminum nitride (AlN), indium nitride (InN), gallium nitride, and gallium arsenide (GaAs).
  • the substrate 130 is formed in a flat plate shape.
  • the substrate 130 has a substrate front surface 131 and a substrate back surface 132 opposite the substrate front surface 131.
  • the substrate back surface 132 constitutes the chip back surface 62 of the first chip 60.
  • the element insulating layer 150 is in contact with the substrate surface 131. In one example, the element insulating layer 150 is formed over the entire surface of the substrate surface 131. In one example, the element insulating layer 150 is an oxide film formed from a material containing silicon oxide (SiO 2 ). The element insulating layer 150 may be formed by stacking a plurality of such oxide films. Note that the material forming the element insulating layer 150 can be changed as desired.
  • the element insulating layer 150 has a layer surface 151 and a layer back surface 152 opposite the layer surface 151.
  • the layer surface 151 faces the same side as the substrate surface 131, and the layer back surface 152 faces the same side as the substrate back surface 132.
  • the layer back surface 152 is in contact with the substrate surface 131.
  • first electrode pads 67A to 67F (not shown in FIG. 14, see FIG. 11), a passivation film 161, and a protective film 162 are formed.
  • the multiple first electrode pads 67A to 67F are in contact with the layer surface 151 of the element insulating layer 150.
  • the multiple first electrode pads 67A to 67F are formed at the same positions as each other in the Z direction.
  • the passivation film 161 is a film that protects the element insulating layer 150, and is formed to cover the layer surface 151.
  • the passivation film 161 is formed to cover the multiple first electrode pads 67A to 67F.
  • the passivation film 161 has openings (not shown) that expose a part of the multiple first electrode pads 67A to 67F in the Z direction.
  • the protective film 162 is formed on the passivation film 161.
  • the passivation film 161 is formed of a single layer of a silicon nitride (SiN) film or a silicon oxynitride (SiON) film.
  • the passivation film 161 is formed of a laminated structure of a silicon oxide film and a silicon nitride film. In this case, the silicon nitride film may be formed on the silicon oxide film. In another example, the passivation film 161 is formed of a laminated structure of a silicon oxide film and a silicon oxynitride film. In this case, the silicon oxynitride film may be formed on the silicon oxide film.
  • the thickness of the passivation film 161 (the size of the passivation film 161 in the Z direction) is thinner than the thickness of the protective film 162 (the size of the protective film 162 in the Z direction). In one example, the thickness of the passivation film 161 is 1 ⁇ 3 or less of the thickness of the protective film 162. In one example, the thickness of the passivation film 161 is 1 ⁇ 4 or less of the thickness of the protective film 162. In one example, the thickness of the passivation film 161 is 1 ⁇ 5 or more of the thickness of the protective film 162. In the example shown in FIG. 15, the thickness of the passivation film 161 is about 1.3 ⁇ m.
  • the protective film 162 is formed on the passivation film 161.
  • the protective film 162 is a film that protects the first chip 60, and is formed of a material that contains, for example, polyimide (PI).
  • the protective film 162 can also be said to be a layer that relieves stress between the sealing resin 90 and the element insulating layer 150 and between the sealing resin 90 and the substrate 130.
  • the protective film 162 constitutes the chip surface 61 of the first chip 60.
  • the first surface side coil 111A and the first back side coil 111B of the first transformer 111 are arranged opposite each other with a gap in the Z direction.
  • An element insulating layer 150 is interposed between the first surface side coil 111A and the first back side coil 111B in the Z direction.
  • the first surface side coil 111A and the first back side coil 111B are provided in the element insulating layer 150. It can also be said that the first back side coil 111B is embedded in the element insulating layer 150.
  • the first surface side coil 111A is arranged closer to the layer surface 151 of the element insulating layer 150 than the first back side coil 111B.
  • the first back side coil 111B is arranged closer to the layer back surface 152 of the element insulating layer 150 (closer to the substrate 130) than the first surface side coil 111A.
  • the first surface side coil 111A is exposed from the layer surface 151 of the element insulating layer 150 in the Z direction.
  • the first front surface side coil 111A is covered with a passivation film 161.
  • the first rear surface side coil 111B is disposed at a distance in the Z direction from the layer rear surface 152 of the element insulating layer 150. In other words, the first rear surface side coil 111B is disposed at a distance in the Z direction from the substrate 130.
  • the element insulating layer 150 is interposed between the first rear surface side coil 111B and the substrate 130.
  • the first surface side coil 111A is embedded in a recess 153 recessed from the layer front surface 151 of the element insulating layer 150 toward the layer back surface 152 (see FIG. 15).
  • the recess 153 is formed in a spiral shape in a plan view.
  • the first surface side coil 111A is formed by a single conductor 170 embedded in the recess 153. In other words, the first surface side coil 111A is configured by a single conductor 170 formed in a spiral shape in a plan view.
  • the conductor 170 has a coil surface 171, a coil back surface 172 opposite the coil surface 171, and a pair of coil side surfaces 173 connecting the coil surface 171 and the coil back surface 172.
  • the coil surface 171 faces the same side as the layer surface 151 of the element insulating layer 150, and the coil back surface 172 faces the same side as the layer back surface 152.
  • the pair of coil side surfaces 173 are formed in a tapered shape whose size in the X direction decreases from the coil surface 171 toward the coil back surface 172.
  • the coil back surface 172 and the pair of coil side surfaces 173 are in contact with the recess 153. In other words, the coil back surface 172 and the pair of coil side surfaces 173 are in contact with the element insulating layer 150.
  • the coil surface 171 is covered with a passivation film 161.
  • the conductive line 170 includes a barrier layer 174 and a metal layer 175 formed on the barrier layer 174 .
  • the barrier layer 174 is formed so as to be in contact with the recess 153.
  • the barrier layer 174 can be said to be a thin film interposed between the metal layer 175 and the element insulating layer 150.
  • the metal layer 175 is formed so as to fill the recess 153.
  • the metal layer 175 is formed of a material containing, for example, copper.
  • the barrier layer 174 has a function of suppressing the diffusion of copper, for example.
  • the barrier layer 174 may contain at least one of titanium, titanium nitride, tantalum (Ta), and tantalum nitride (TaN).
  • the metal layer 175 may contain at least one of aluminum, gold (Au), silver, and tungsten (W).
  • the thickness of the conductor 170 of the first front side coil 111A is thicker than the thickness of the passivation film 161 and thinner than the thickness of the protective film 162.
  • the thickness of the conductor 170 is thicker than the thickness of the first back side coil 111B (see FIG. 15).
  • the thickness of the conductor 170 is between two and three times the thickness of the passivation film 161.
  • the thickness of the conductor 170 is 1 ⁇ 2 or less the thickness of the protective film 162.
  • the thickness of the conductor 170 is 1 ⁇ 3 or more the thickness of the protective film 162.
  • the thickness of the conductor 170 can be defined by the distance between the coil front surface 171 and the coil back surface 172 in the Z direction.
  • the width dimension of coil surface 171 of conductor 170 (the length in the X direction in FIG. 16) is longer than the thickness of conductor 170. In one example, the width dimension of coil surface 171 is more than twice the thickness of conductor 170. In one example, the width dimension of coil surface 171 is less than three times the thickness of conductor 170. In the example of FIG. 16, the width dimension of coil surface 171 is approximately 6.8 ⁇ m.
  • an element insulating layer 150 is interposed between adjacent conductors 170 in the X direction.
  • the conductors 170 are spaced apart from each other in the X direction. The distance between adjacent conductors 170 in the X direction gradually increases from the coil surface 171 toward the coil back surface 172.
  • the distance between adjacent conductors 170 in the X direction is defined as the distance between the coil surfaces 171 of adjacent conductors 170 in the X direction. This distance between conductors refers to the minimum distance between adjacent conductors 170 in the X direction. The distance between conductors is smaller than the length of the coil surface 171 in the X direction. In one example, the distance between conductors is 1 ⁇ 2 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 3 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 4 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 5 or less of the width dimension of the coil surface 171.
  • the distance between conductors is 1 ⁇ 6 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 6 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 6 or less of the width dimension of the coil surface 171. In one example, the distance between conductors is 1 ⁇ 6 or more of the width dimension of the coil surface 171. The distance between conductors is smaller than the thickness of the conductors 170. In one example, the distance between the conductors is 1/2 or less of the thickness of the conductor 170. In another example, the distance between the conductors is 1/3 or more of the thickness of the conductor 170. In the example of FIG. 16, the distance between the conductors is about 1 ⁇ m.
  • the first back side coil 111B is composed of two coil layers 111BA and 111BB.
  • the coil layer 111BA constitutes a conductor closer to the layer front surface 151 of the element insulation layer 150
  • the coil layer 111BB constitutes a conductor closer to the layer back surface 152.
  • the coil layers 111BA and 111BB are arranged apart in the Z direction.
  • the element insulation layer 150 is interposed between the coil layers 111BA and 111BB in the Z direction.
  • Each of the coil layers 111BA and 111BB includes a conductor 180.
  • the coil layer 111BA is constituted by the conductor 180 being formed in a spiral shape in a planar view
  • the coil layer 111BB is constituted by another conductor 180 being formed in a spiral shape in a planar view.
  • the number of turns of the first back side coil 111B can be defined as the sum of the number of turns of the coil layer 111BA and the number of turns of the coil layer 111BB.
  • coil layer 111BA and coil layer 111BB are arranged to be offset from each other in the X direction.
  • coil layer 111BA and coil layer 111BB are arranged to be partially overlapping.
  • coil layer 111BA and coil layer 111BB are arranged to have portions that do not partially overlap.
  • coil layer 111BA is arranged to be offset in the X direction from coil layer 111BB by 1/2 the width dimension of conductor 180 (length in the X direction in FIG. 17).
  • Each of the coil layers 111BA, 111BB is arranged offset in the X direction with respect to the first surface side coil 111A.
  • the coil layers 111BA, 111BB are arranged so as to partially overlap with the first surface side coil 111A.
  • the coil layer 111BA is offset toward the first chip side surface 63 (see FIG. 10) with respect to the first surface side coil 111A (see FIG. 15).
  • the coil layer 111BB is offset toward the second chip side surface 64 (see FIG. 10) with respect to the first surface side coil 111A.
  • the number of turns of coil layer 111BA and the number of turns of coil layer 111BB are the same.
  • the number of turns of coil layers 111BA and 111BB is less than the number of turns of first surface side coil 111A.
  • the number of turns of coil layer 111BA is 1/2 the number of turns of first surface side coil 111A
  • the number of turns of coil layer 111BB is 1/2 the number of turns of first surface side coil 111A.
  • the sum of the number of turns of coil layer 111BA and the number of turns of coil layer 111BB is the same as the number of turns of first surface side coil 111A. Therefore, the number of turns of first back surface side coil 111B is the same as the number of turns of first surface side coil 111A.
  • the coil layers 111BA and 111BB are formed by conductors 180 of the same shape formed into a spiral shape in a planar view.
  • the conductor 180 has a coil front surface 181, a coil back surface 182 opposite the coil front surface 181, and a pair of coil side surfaces 183 connecting the coil front surface 181 and the coil back surface 182.
  • the coil front surface 181 faces the same side as the layer front surface 151 of the element insulating layer 150
  • the coil back surface 172 faces the same side as the layer back surface 152.
  • the pair of coil side surfaces 183 extend along the Z direction.
  • the coil front surface 181, the coil back surface 182, and the pair of coil side surfaces 183 each contact the element insulating layer 150.
  • the conductor 180 includes a back-side barrier layer 184, a metal layer 185 formed on the back-side barrier layer 184, and a front-side barrier layer 186 formed on the metal layer 185.
  • the back-side barrier layer 184 constitutes the coil back surface 182 of the conductor 180.
  • the back-side barrier layer 184 can be considered a thin film interposed between the back surface of the metal layer 185 and the element insulating layer 150 in the Z direction.
  • the surface-side barrier layer 186 constitutes the coil surface 181 of the conductor 180.
  • the surface-side barrier layer 186 can be considered a thin film interposed between the surface of the metal layer 185 and the element insulating layer 150 in the Z direction.
  • the metal layer 185 has a thickness greater than that of the back-side barrier layer 184 and the front-side barrier layer 186.
  • a pair of side surfaces of the metal layer 185 are not covered by either the back-side barrier layer 184 or the front-side barrier layer 186, and are in contact with the element insulating layer 150.
  • the pair of side surfaces of the metal layer 185 form part of the Z direction of the pair of coil side surfaces 183.
  • the metal layer 185 is formed of a material containing, for example, aluminum. Both the back side barrier layer 184 and the front side barrier layer 186 may contain titanium or titanium nitride. In this way, the material constituting the first back side coil 111B is different from the material constituting the first front side coil 111A.
  • the material constituting the first front side coil 111A and the material constituting the first back side coil 111B can each be changed as desired.
  • the material constituting the first front side coil 111A and the material constituting the first back side coil 111B may be the same.
  • the thickness of the conductor 180 of the first back side coil 111B is thinner than the thickness of the protective film 162.
  • the thickness of the conductor 180 is thinner than the thickness of the conductor 170.
  • the thickness of the conductor 180 is 1 ⁇ 2 or less than the thickness of the conductor 170.
  • the thickness of the conductor 180 is about 1 ⁇ 3 of the thickness of the conductor 170.
  • the thickness of the conductor 180 is thinner than the thickness of the passivation film 161.
  • the thickness of the conductor 180 is 1 ⁇ 2 or more than the thickness of the passivation film 161.
  • the thickness of the conductor 180 can be defined by the distance in the Z direction between the coil front surface 181 and the coil back surface 182 (both see FIG. 17).
  • the width dimension of the conductor 180 (the length in the X direction in FIG. 15) is longer than the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than twice the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than five times the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than ten times the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than twelve times the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than fifteen times the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is more than sixteen times the thickness of the conductor 180. In one example, the width dimension of the conductor 180 is about seventeen times the thickness of the conductor 180.
  • the width dimension of conductor 180 is longer than the width dimension of conductor 170.
  • the width dimension of conductor 180 is more than twice the width dimension of conductor 170.
  • the width dimension of conductor 180 is less than three times the width dimension of conductor 170.
  • the width dimension of conductor 180 is approximately 15.8 ⁇ m.
  • the width dimension of conductor 170 can be defined as the size in a direction perpendicular to the direction in which conductor 170 extends in a planar view.
  • the width dimension of conductor 180 can be defined as the size in a direction perpendicular to the direction in which conductor 180 extends in a planar view.
  • an element insulating layer 150 is interposed between adjacent conductors 180 in the X direction.
  • the conductors 180 are spaced apart from each other in the X direction.
  • the distance between adjacent conductors 180 in the X direction (hereinafter, "inter-conductor distance") is the same from the coil surface 181 to the coil back surface 182.
  • the inter-conductor distance is smaller than the width dimension of the conductors 180. In one example, the inter-conductor distance is 1/2 or less of the width dimension of the conductors 180. In one example, the inter-conductor distance is 1/5 or less of the width dimension of the conductors 180.
  • the inter-conductor distance is 1/10 or less of the width dimension of the conductors 180. In one example, the inter-conductor distance is 1/15 or less of the width dimension of the conductors 180. In one example, the inter-conductor distance is 1/16 or less of the width dimension of the conductors 180. In one example, the distance between the conductors is 1/17 or less of the width dimension of the conductor 180. In one example, the distance between the conductors is 1/18 or less of the width dimension of the conductor 180. In one example, the distance between the conductors is 1/19 or less of the width dimension of the conductor 180. In one example, the distance between the conductors is 1/20 or more of the width dimension of the conductor 180.
  • the distance between the conductors is smaller than the thickness of the conductor 180.
  • the distance between the conductors is 1/2 or more of the thickness of the conductor 180.
  • the distance between the conductors of the coil layers 111BA and 111BB is smaller than the distance between the conductors of the first surface side coil 111A. In the example of FIG. 15, the distance between the conductors is about 0.8 ⁇ m.
  • the distance in the Z direction between the first surface side coil 111A and the first back side coil 111B is greater than the distance in the Z direction between the layer back surface 152 of the element insulating layer 150 and the first back side coil 111B. In one example, the distance in the Z direction between the first surface side coil 111A and the first back side coil 111B is smaller than the width dimension of the conductor 180. The distance in the Z direction between the first surface side coil 111A and the first back side coil 111B is, for example, about 12.8 ⁇ m.
  • the distance in the Z direction between the first surface side coil 111A and the first back side coil 111B can be defined by the distance in the Z direction between the coil back surface 172 of the conductor 170 and the coil front surface 181 of the conductor 180 of the coil layer 111BA.
  • the distance in the Z direction between the first front side coil 111A and the first back side coil 111B is set according to the desired dielectric strength and the electric field strength of each of the first front side coil 111A and the first back side coil 111B.
  • the conductor 170 of the first surface side coil 111A is formed so that its coil surface 171 is exposed in the Z direction from the element insulating layer 150, but this is not limited to the above.
  • the conductor 170 of the first surface side coil 111A may be embedded in the element insulating layer 150. In other words, the coil surface 171 of the conductor 170 may be in contact with the element insulating layer 150. In other words, the conductor 170 may be disposed closer to the layer back surface 152 than the layer surface 151 of the element insulating layer 150.
  • the circuit region 120 includes a wiring layer 121 and a substrate-side wiring layer 122 that is disposed closer to the substrate 130 than the wiring layer 121 .
  • the wiring layer 121 is formed at the same position in the Z direction as the first surface side coil 111A of the first transformer 111. In other words, the surface of the wiring layer 121 is exposed from the layer surface 151 of the element insulating layer 150 and is covered by the passivation film 161. In the example shown in FIG. 18, the thickness of the wiring layer 121 is 2.8 ⁇ m.
  • the substrate side wiring layer 122 is embedded in the element insulating layer 150.
  • the substrate side wiring layer 122 includes a first wiring layer 122A, a second wiring layer 122B, and a third wiring layer 122C.
  • the first wiring layer 122A is disposed closer to the substrate 130 in the Z direction than the second wiring layer 122B and the third wiring layer 122C.
  • the first wiring layer 122A is disposed spaced apart in the Z direction from the layer back surface 152 of the element insulating layer 150. In other words, the first wiring layer 122A is disposed spaced apart in the Z direction from the substrate 130.
  • the element insulating layer 150 is interposed between the first wiring layer 122A and the substrate 130 in the Z direction.
  • the circuit region 120 includes a first via 123 that connects the wiring layer 121 and the substrate-side wiring layer 122.
  • the first via 123 connects the wiring layer 121 and the first wiring layer 122A.
  • the first via 123 is formed, for example, from the same material as the wiring layer 121.
  • the first via 123 includes a barrier layer 123A and a metal layer 123B, similar to the conductor 170.
  • the materials constituting the barrier layer 123A and the metal layer 123B are the same as the materials constituting the barrier layer 174 and the metal layer 175 of the conductor 170 (both of which are shown in FIG. 16).
  • the circuit region 120 includes a second via 124 that connects the first wiring layer 122A to the substrate 130, a third via 125 that connects the first wiring layer 122A to the second wiring layer 122B, and a fourth via 126 that connects the second wiring layer 122B to the third wiring layer 122C.
  • the substrate-side wiring layer 122 is electrically connected to the substrate 130.
  • the first to fourth vias 123 to 126 are formed of a material that contains, for example, tungsten.
  • the first wiring layer 122A, the second wiring layer 122B, and the third wiring layer 122C have different thicknesses.
  • the thickness of the first wiring layer 122A is thinner than both the thickness of the second wiring layer 122B and the thickness of the third wiring layer 122C.
  • the thickness of the second wiring layer 122B is the same as the thickness of the third wiring layer 122C.
  • the first to third wiring layers 122A to 122C are thinner in the Z direction near the substrate 130.
  • the first to third wiring layers 122A to 122C are thicker as they move away from the substrate 130 in the Z direction.
  • the thickness of the second wiring layer 122B and the third wiring layer 122C is less than twice the thickness of the first wiring layer 122A. 19, the thickness of the first wiring layer 122A is, for example, 0.52 ⁇ m, and the thicknesses of the second wiring layer 122B and the third wiring layer 122C are, for example, 0.93 ⁇ m. In one example, the second wiring layer 122B is formed at the same position in the Z direction as the coil layer 111BB of the first back side coil 111B, and the third wiring layer 122C is formed at the same position in the Z direction as the coil layer 111BA.
  • Signal transmission device 10 includes inter-chip wires WA that electrically connect first chip 60 and second chip 70, and first terminal wires WB that individually connect first chip 60 and first terminals 12 to 17.
  • Inter-chip wires WA are made of a material containing gold.
  • First terminal wires WB are made of a material containing copper or aluminum.
  • the inter-chip wire WA is relatively important from the standpoint of the insulation reliability of the signal transmission device 10, and the height and shape of the wire must be inspected with high precision.
  • the inter-chip wire WA is formed from a material containing gold, and therefore when the height of the inter-chip wire WA is inspected, for example, using X-ray inspection, the inter-chip wire WA is displayed more clearly than when the inter-chip wire WA is formed from a material containing copper or aluminum. Therefore, the height of the inter-chip wire WA can be inspected accurately. Furthermore, the shape of the inter-chip wire WA can also be inspected accurately.
  • the first terminal wire WB is less important than the inter-chip wire WA in terms of the insulation reliability of the signal transmission device 10.
  • the first terminal wire WB is made of a material containing copper or aluminum, costs can be reduced compared to when the first terminal wire WB is made of a material containing gold. In this way, it is possible to achieve both improved quality and reduced costs for the signal transmission device 10.
  • the first terminal wire WB is a copper wire whose surface is coated with palladium. According to this configuration, the palladium coated on the surface of the copper wire can increase the bonding area of the bonding portion between the first terminal wire WB, which serves as the second bond portion of the first terminal wire WB, and the first terminals 12 to 17. This can increase the bonding strength between the first terminal wire WB and the first terminals 12 to 17, thereby suppressing the occurrence of cracks at the bonding portions between the first terminal wire WB and the first terminals 12 to 17.
  • the signal transmission device 10 further includes a plurality of second terminal wires WD that individually connect the second chip 70 to the second terminals 42, 43.
  • the signal transmission device 10 further includes a plurality of third terminal wires WF that individually connect the third chip 80 to the third terminals 45, 46.
  • Each of the second terminal wires WD and the third terminal wires WF is formed from a material containing copper or aluminum.
  • the second terminal wire WD and the third terminal wire WF which are less important than the inter-chip wire WA in terms of the insulation reliability of the signal transmission device 10, are each made of a material containing copper or aluminum, which allows for cost reduction compared to when the second terminal wire WD and the third terminal wire WF are each made of a material containing gold.
  • the wire WD for the second terminal is a copper wire with a palladium coating on its surface.
  • the wire WF for the third terminal is a copper wire with a palladium coating on its surface. This configuration provides the same effect as that of (1-2) above.
  • the signal transmission device 10 further includes a first die pad wire WC that connects the first chip 60 and the first die pad 30.
  • the first die pad wire WC is made of a material containing copper or aluminum.
  • the first die pad wire WC is a copper wire whose surface is coated with palladium. According to this configuration, the same effect as that of (1-2) above can be obtained.
  • the signal transmission device 10 further includes a second die pad wire WE that connects the second chip 70 and the second die pad 50A.
  • the second die pad wire WE is made of a material containing copper or aluminum. This configuration provides the same effect as the effect of (1-3) above.
  • the second die pad wire WE is a copper wire whose surface is coated with palladium. According to this configuration, the same effect as that of (1-2) above can be obtained.
  • the signal transmission device 10 further includes a third die pad wire WG that connects the third chip 80 and the third die pad 50B.
  • the third die pad wire WG is made of a material containing copper or aluminum. This configuration provides the same effect as the effect of (1-3) above.
  • the third die pad wire WG is a copper wire whose surface is coated with palladium. According to this configuration, the same effect as that of (1-2) above can be obtained.
  • Each of the first electrode pads 67, each of the second electrode pads 68, and each of the third electrode pads 69 of the first chip 60 has a thickness of 2 ⁇ m or more. According to this configuration, even if an inter-chip wire WA is bonded to each first electrode pad 67, it is possible to suppress the occurrence of cracks in the element insulating layer 150 directly below each first electrode pad 67. Even if a first terminal wire WB is bonded to each second electrode pad 68, it is possible to similarly suppress the occurrence of cracks in the element insulating layer 150. Even if a first die pad wire WC is bonded to each third electrode pad 69, it is possible to similarly suppress the occurrence of cracks in the element insulating layer 150.
  • the sealing resin 90 contains sulfur as an additive.
  • the concentration of the sulfur added is 300 ⁇ g/g or less. According to this configuration, it is possible to reduce sulfide corrosion of copper wires having a palladium-coated surface, such as the wire WB for the first terminal, the wire WD for the second terminal, the wire WF for the third terminal, the wire WC for the first die pad, the wire WE for the second die pad, and the wire WG for the third die pad.
  • a plating layer 25 is formed on the internal terminal surface 21 of the first internal terminal portion 12B of the first terminal 12.
  • the plating layer 25 is not formed on the end of the internal terminal surface 21 of the first internal terminal portion 12B on the tip surface 24 side, and the end is in contact with the sealing resin 90.
  • This configuration can prevent peeling between the plating layer 25 at the end of the inner terminal surface 21 of the first inner terminal portion 12B near the tip surface 24 and the sealing resin 90.
  • the first inner terminal portions 12B to 17B of the first terminals 12 to 17 also have a similar configuration, and therefore the same effect can be obtained.
  • a plating layer 25 is formed on the internal terminal surface 21 of the second internal terminal portion 42B, 43B of the second terminal 42, 43.
  • the plating layer 25 is not formed on the end of the internal terminal surface 21 of the second internal terminal portion 42B, 43B on the tip surface 24 side, and the end is in contact with the sealing resin 90. This configuration makes it possible to suppress peeling between the plating layer 25 and the sealing resin 90 at the end of the internal terminal surface 21 of the second internal terminal portion 42B, 43B closer to the tip surface 24.
  • a plating layer 25 is formed on the internal terminal surface 21 of the third internal terminal portion 45B, 46B of the third terminal 45, 46.
  • the plating layer 25 is not formed on the end of the internal terminal surface 21 of the third internal terminal portion 45B, 46B on the tip surface 24 side, and the end is in contact with the sealing resin 90. With this configuration, peeling between the plating layer 25 and the sealing resin 90 at the end of the internal terminal surface 21 of the third internal terminal portion 45B, 46B closer to the tip surface 24 can be suppressed.
  • the outer surface of the sealing resin 90 is formed so as to have a surface roughness Rz of 8 ⁇ m or more. This configuration increases the creepage distances between the first terminals 11-17 and the second terminals 41-43 and the third terminals 44-46 via the sealing resin 90. This makes it possible to improve the dielectric strength between the first terminals 11-17 and the second terminals 41-43 and the third terminals 44-46.
  • the distance in the Y direction between the second terminal 43 and the third terminal 44 which is the shortest distance between the multiple second terminals 41-43 and the multiple third terminals 44-46, is greater than the distance in the Y direction between the second terminal 41 and the second terminal 42, which is the distance between adjacent second terminals in the second direction among the multiple second terminals 41-43.
  • This configuration allows for a large creepage distance between the second terminals 41-43 and the third terminals 44-46. This improves the dielectric strength between the second chip 70 and the third chip 80.
  • a signal transmission device 10 of the second embodiment will be described with reference to Fig. 20.
  • the signal transmission device 10 of the second embodiment is different from the signal transmission device 10 of the first embodiment in the configuration of some of the first terminals 11 to 17.
  • the configuration different from the first embodiment will be described in detail, and the components common to the first embodiment will be denoted by the same reference numerals and their description will be omitted.
  • the shape of the first terminal 16 among the first terminals 12 to 17 is different from that of the first embodiment. More specifically, the first internal terminal portion 16B of the first terminal 16 extends toward the second electrode pad 68, which is the first bond portion of the first terminal wire WB connected to the first internal terminal portion 16B. As a result, in a plan view, the direction in which the first terminal wire WB connected to the first internal terminal portion 16B extends is parallel to the direction in which the first internal terminal portion 16B extends.
  • the absolute value of the difference between the direction in which the first terminal wire WB connected to the first internal terminal portion 16B extends and the direction in which the first internal terminal portion 16B extends is within 5° in a plan view, it can be said that the direction in which the first terminal wire WB connected to the first internal terminal portion 16B extends is parallel to the direction in which the first internal terminal portion 16B extends.
  • the first terminal wire WB connected to the first internal terminal portion 16B extends so as to pass through the tip surface of the first internal terminal portion 16B.
  • the first terminal wire WB that has passed through the tip surface of the first internal terminal portion 16B in a plan view is joined to the first internal terminal portion 16B.
  • the tip surface of the first internal terminal portion 16B is the side surface facing the first die pad 30, and is the side surface of the first internal terminal portion 16B that faces the first chip 60.
  • the tip surface of the first internal terminal portion 16B corresponds to "the side surface that intersects with the first terminal wire WB connected to the first internal terminal portion 16B in a plan view.”
  • a signal transmission device 10 of the third embodiment will be described with reference to Figures 21 and 22.
  • the signal transmission device 10 of the third embodiment is different from the signal transmission device 10 of the first embodiment in the configuration of the second bond portion of some of the multiple first terminal wires WB.
  • the configuration different from the first embodiment will be described in detail, and the same reference numerals will be used to designate the same components as the first embodiment, and the description thereof will be omitted.
  • a security bond WB1 is formed on the second bond portion of the first terminal wire WB connected to the first internal terminal portions 13B to 16B.
  • a security bond WB1 is not formed on the second bond portion of the first terminal wire WB connected to the first internal terminal portions 12B and 17B.
  • the multiple first terminal wires WB include a first specific wire in which a security bond WB1 is formed at the joint with the first internal terminal portion (in the third embodiment, the first internal terminal portion 13B to 16B), and a second specific wire in which a security bond WB1 is not formed at the joint with the first internal terminal portion (in the third embodiment, the first internal terminal portion 12B, 17B).
  • FIG. 22 shows a perspective view of the second bond portion of the first terminal wire WB joined to the first internal terminal portion 15B and its surroundings.
  • the second bond portion of the first terminal wire WB joined to the first internal terminal portions 13B, 14B, 16B has the same structure as the second bond portion of the first terminal wire WB joined to the first internal terminal portion 15B.
  • the configuration of the second bond portion of the first terminal wire WB joined to the first internal terminal portion 15B will be described in detail, and a detailed description of the configuration of the second bond portion of the first terminal wire WB joined to the first internal terminal portions 13B, 14B, 16B will be omitted.
  • the second bond portion of the first terminal wire WB includes a joint portion WBP that is joined to the first internal terminal portion 15B.
  • the joint portion WBP is a portion that is crushed by being pressed against the first internal terminal portion 15B by the wire bonding device.
  • the thickness of the joint portion WBP is smaller than the diameter of the first terminal wire WB.
  • the security bond WB1 is formed, for example, by providing a stud bump SB on the joint WBP.
  • the stud bump SB is formed by ball bonding using a wire bonding device.
  • the joint WBP is sandwiched between the first internal terminal portion 15B and the stud bump SB.
  • a security bond WB1 is formed on the second bond portion of the first terminal wire WB connected to the first internal terminal portions 13B to 16B.
  • the security bond WB1 can prevent the first terminal wire WB from peeling off from the first internal terminal portions 13B to 16B. Furthermore, because the security bond WB1 is not formed on the second bond portion of the first terminal wire WB connected to the first internal terminal portions 12B and 17B, the manufacturing process can be simplified. This allows the manufacturing costs of the signal transmission device 10 to be reduced.
  • a signal transmission device 10 of the fourth embodiment will be described with reference to Fig. 23.
  • the signal transmission device 10 of the fourth embodiment is different from the signal transmission device 10 of the first embodiment in the configurations of the first die pad 30, the second die pad 50A, and the third die pad 50B.
  • the configurations different from the first embodiment will be described in detail, and the same reference numerals will be used to designate the same components as the first embodiment, and the description thereof will be omitted.
  • the first tip side curved surface 35A and the second tip side curved surface 35B are different from those of the first embodiment. Specifically, in a plan view, the arc length of the first tip side curved surface 35A and the second tip side curved surface 35B is longer than the arc length of the base end side curved surface 36. In other words, in a plan view, the radius of curvature of the first tip side curved surface 35A and the second tip side curved surface 35B is larger than the radius of curvature of the base end side curved surface 36. In one example, in a plan view, the arc length of the first tip side curved surface 35A and the second tip side curved surface 35B is more than twice the arc length of the base end side curved surface 36.
  • the arc length of the first tip side curved surface 35A is equal to the arc length of the second tip side curved surface 35B.
  • the difference between the arc length of the first tip side curved surface 35A and the arc length of the second tip side curved surface 35B is, for example, 10% or less of the arc length of the first tip side curved surface 35A, it can be said that the arc length of the first tip side curved surface 35A is equal to the arc length of the second tip side curved surface 35B.
  • the radius of curvature of the first tip side curved surface 35A is equal to the radius of curvature of the second tip side curved surface 35B.
  • the third tip side curved surface 55AA is different from that of the first embodiment. Specifically, in a plan view, the arc length of the third tip side curved surface 55AA is longer than the arc length of the base end side curved surface 56A. In a plan view, it can also be said that the radius of curvature of the third tip side curved surface 55AA is larger than the radius of curvature of the base end side curved surface 56A. In addition, in a plan view, the arc length of the third tip side curved surface 55AA is longer than the arc length of the fourth tip side curved surface 55AB. In a plan view, it can also be said that the radius of curvature of the third tip side curved surface 55AA is larger than the radius of curvature of the fourth tip side curved surface 55AB.
  • the arc length of the third distal curved surface 55AA is at least twice the arc length of the base curved surface 56A. In one example, in a plan view, the arc length of the third distal curved surface 55AA is at least twice the arc length of the fourth distal curved surface 55AB.
  • the sixth tip side curved surface 55BB is different from that of the first embodiment. Specifically, in a plan view, the arc length of the sixth tip side curved surface 55BB is longer than the arc length of the base end side curved surface 56BA. In a plan view, it can also be said that the radius of curvature of the sixth tip side curved surface 55BB is larger than the radius of curvature of the base end side curved surface 56BA. Also, in a plan view, the arc length of the sixth tip side curved surface 55BB is longer than the arc length of the base end side curved surface 56BB.
  • the radius of curvature of the sixth tip side curved surface 55BB is larger than the radius of curvature of the base end side curved surface 56BB. Also, in a plan view, the arc length of the sixth tip side curved surface 55BB is longer than the arc length of the fifth tip side curved surface 55BA. In plan view, the radius of curvature of the sixth tip side curved surface 55BB is greater than the radius of curvature of the fifth tip side curved surface 55BA.
  • the arc length of the sixth distal curved surface 55BB is at least twice the arc length of the base curved surface 56BA. In one example, in a plan view, the arc length of the sixth distal curved surface 55BB is at least twice the arc length of the base curved surface 56BA. In one example, the arc length of the sixth distal curved surface 55BB is at least twice the arc length of the fifth distal curved surface 55BA.
  • the arc length of the sixth tip side curved surface 55BB of the third die pad 50B is equal to the arc length of the third tip side curved surface 55AA of the second die pad 50A.
  • the difference between the arc length of the sixth tip side curved surface 55BB and the arc length of the third tip side curved surface 55AA is, for example, 10% or less of the arc length of the sixth tip side curved surface 55BB, it can be said that the arc length of the sixth tip side curved surface 55BB is equal to the arc length of the third tip side curved surface 55AA.
  • the radius of curvature of the sixth tip side curved surface 55BB is equal to the radius of curvature of the third tip side curved surface 55AA in a plan view.
  • the first tip curved surface 35A of the first die pad 30 faces the third tip curved surface 55AA of the second die pad 50A in the X direction.
  • the second tip curved surface 35B of the first die pad 30 faces the sixth tip curved surface 55BB of the third die pad 50B in the X direction.
  • the first die pad 30 has a first tip side curved surface 35A formed between the first tip surface 31 and the first side surface 33, a second tip side curved surface 35B formed between the first tip surface 31 and the second side surface 34, and a base side curved surface 36 formed between the first base end surface 32 and the first side surface 33.
  • the arc lengths of both the first tip side curved surface 35A and the second tip side curved surface 35B are longer than the arc length of the base side curved surface 36.
  • the first tip curved surface 35A can alleviate electric field concentration at the corner portion of the tip of the first die pad 30 that is close to the second die pad 50A.
  • the second tip curved surface 35B can alleviate electric field concentration at the corner portion of the tip of the first die pad 30 that is close to the third die pad 50B. This makes it possible to avoid dielectric breakdown between the first die pad 30 and the second die pad 50A and third die pad 50B, thereby improving the dielectric strength of the signal transmission device 10.
  • the second die pad 50A has a third tip side curved surface 55AA formed between the second tip surface 51A and the third side surface 53A, and a base side curved surface 56A formed between the second base side surface 52A and the fourth side surface 54A.
  • the arc length of the third tip side curved surface 55AA is longer than the arc length of the base side curved surface 56A.
  • the third tip curved surface 55AA can reduce electric field concentration at the corner portion at the tip of the second die pad 50A that is closest to the first die pad 30. This makes it possible to avoid dielectric breakdown between the first die pad 30 and the second die pad 50A, thereby improving the dielectric strength of the signal transmission device 10.
  • the third die pad 50B has a sixth tip side curved surface 55BB formed between the third tip surface 51B and the sixth side surface 54B, and a base side curved surface 56BB formed between the third base side surface 52B and the sixth side surface 54B.
  • the arc length of the sixth tip side curved surface 55BB is longer than the arc length of the base side curved surface 56BB.
  • the sixth tip curved surface 55BB can reduce electric field concentration at the corner portion at the tip of the third die pad 50B closest to the first die pad 30. This makes it possible to avoid dielectric breakdown between the first die pad 30 and the third die pad 50B, thereby improving the dielectric strength of the signal transmission device 10.
  • the signal transmission device 10 of the fifth embodiment differs from the signal transmission device 10 of the first embodiment mainly in the configurations of the first chip 60, the second chip 70, and the third chip 80.
  • configurations different from the first embodiment will be described in detail, and components common to the first embodiment will be denoted by the same reference numerals and descriptions thereof will be omitted.
  • FIG. 24 shows a schematic cross-sectional structure of the first die pad 30 and the first chip 60 cut in the XZ plane
  • FIG. 25 shows a schematic cross-sectional structure of the first die pad 30 and the first chip 60 cut in the YZ plane.
  • the wires WA-WC and the sealing resin 90 are omitted.
  • the substrate 130 of the first chip 60 has first to fourth substrate side surfaces 133 to 136 that connect the substrate front surface 131 and substrate back surface 132.
  • the first substrate side surface 133 constitutes a part of the first chip side surface 63 of the first chip 60
  • the second substrate side surface 134 constitutes a part of the second chip side surface 64
  • the third substrate side surface 135 constitutes a part of the third chip side surface 65
  • the fourth substrate side surface 136 constitutes a part of the fourth chip side surface 66.
  • the substrate 130 can be divided into a first portion 137 and a second portion 138 by a step portion 139.
  • the first portion 137 is a portion of the substrate 130 that is closer to the first die pad 30.
  • the second portion 138 is a portion that is provided on the first portion 137.
  • the step portion 139 is formed around the entire periphery of the substrate 130.
  • the thickness dimension (size in the Z direction) of the first portion 137 is greater than the thickness dimension (size in the Z direction) of the second portion 138. In one example, the thickness dimension of the first portion 137 is more than twice the thickness dimension of the second portion 138. In one example, the thickness dimension of the first portion 137 is more than three times the thickness dimension of the second portion 138. In one example, the thickness dimension of the first portion 137 is less than four times the thickness dimension of the second portion 138.
  • the first conductive bonding material SD1 is interposed between the first portion 137 and the first die pad 30 in the Z direction, and has a portion that protrudes from the first chip 60 in a direction perpendicular to the Z direction. This protruding portion forms a first fillet SDA between the first portion 137.
  • the first fillet SDA is not formed in the second portion 138 due to the step portion 139.
  • the first fillet SDA is formed over the entire first portion 137 in the Z direction.
  • the height dimension (size in the Z direction) of the first fillet SDA can be changed as desired within a range lower than the step portion 139.
  • the height dimension of the first fillet SDA may be approximately 1/2 the thickness dimension of the first portion 137.
  • the position of the step portion 139 in the first chip 60 in the Z direction can be changed arbitrarily.
  • the relationship between the thickness dimension of the first portion 137 and the thickness dimension of the second portion 138 can be changed arbitrarily.
  • the thickness dimension of the first portion 137 may be equal to the thickness dimension of the second portion 138.
  • the thickness dimension of the first portion 137 is 1/2 or less of the thickness dimension of the second portion 138.
  • the thickness dimension of the first portion 137 is 1/3 or less of the thickness dimension of the second portion 138.
  • the thickness dimension of the first portion 137 is 1/4 or more of the thickness dimension of the second portion 138.
  • the thickness dimension of the first portion 137 is 1/4 or more and 3/4 or less of the thickness dimension (size in the Z direction) of the first chip 60.
  • the width H1 of the step portion 139 is equal on the first to fourth substrate sides 133 to 136.
  • the width H1 of the step portion 139 is, for example, about 3 ⁇ m.
  • the width H1 of the step portion 139 can be defined, for example, by the distance between the portion of the first substrate side 133 that corresponds to the first portion 137 and the portion that corresponds to the second portion 138.
  • FIG. 26 shows a schematic cross-sectional structure of the second die pad 50A and the second chip 70 cut in the XZ plane
  • FIG. 27 shows a schematic cross-sectional structure of the second die pad 50A and the second chip 70 cut in the YZ plane.
  • the wires WD, WE and the sealing resin 90 are omitted.
  • the second chip 70 mounted on the second die pad 50A includes a substrate 230.
  • the substrate 230 is formed of, for example, a semiconductor substrate.
  • the substrate 230 is a semiconductor substrate formed of a material containing silicon. Note that the substrate 230 may use a wide band gap semiconductor or a compound semiconductor as a semiconductor substrate. Also, instead of a semiconductor substrate, the substrate 230 may use an insulating substrate formed of a material containing glass, or an insulating substrate formed of a material containing ceramics such as alumina.
  • the wide bandgap semiconductor is a semiconductor substrate having a bandgap of 2.0 eV or more.
  • the wide bandgap semiconductor may be any one of silicon carbide, gallium nitride, and gallium oxide.
  • the compound semiconductor may be a III-V compound semiconductor.
  • the compound semiconductor may include at least one of aluminum nitride, indium nitride, gallium nitride, and gallium arsenide.
  • the substrate 230 of the second chip 70 has first to fourth substrate side surfaces 233 to 236 that connect the substrate surface 231 and substrate back surface 232.
  • the first substrate side surface 233 constitutes part of the first chip side surface 73 of the second chip 70
  • the second substrate side surface 234 constitutes part of the second chip side surface 74
  • the third substrate side surface 235 constitutes part of the third chip side surface 75
  • the fourth substrate side surface 236 constitutes part of the fourth chip side surface 76.
  • the substrate back surface 232 constitutes the chip back surface 72 of the second chip 70.
  • the substrate 230 can be divided into a first portion 237 and a second portion 238 by a step portion 239.
  • the first portion 237 is a portion of the substrate 230 that is closer to the second die pad 50A.
  • the second portion 238 is a portion that is provided on the first portion 237.
  • the step portion 239 is formed around the entire periphery of the substrate 230.
  • the thickness dimension (size in the Z direction) of the first portion 237 is greater than the thickness dimension (size in the Z direction) of the second portion 238. In one example, the thickness dimension of the first portion 237 is more than twice the thickness dimension of the second portion 238. In one example, the thickness dimension of the first portion 237 is more than three times the thickness dimension of the second portion 238. In one example, the thickness dimension of the first portion 237 is less than four times the thickness dimension of the second portion 238.
  • the second conductive bonding material SD2 is interposed between the first portion 237 and the second die pad 50A in the Z direction, and has a portion that protrudes from the second chip 70 in a direction perpendicular to the Z direction.
  • This protruding portion forms a second fillet SDB between the first portion 237.
  • the second fillet SDB is not formed in the second portion 238 due to the step portion 239.
  • the second fillet SDB is formed over the entire first portion 237 in the Z direction.
  • the height dimension (size in the Z direction) of the second fillet SDB can be changed as desired within a range lower than the step portion 239.
  • the height dimension of the second fillet SDB may be approximately 1/2 the thickness dimension of the first portion 237.
  • the position of the step portion 239 in the second chip 70 in the Z direction can be changed arbitrarily.
  • the relationship between the thickness dimension of the first portion 237 and the thickness dimension of the second portion 238 can be changed arbitrarily.
  • the thickness dimension of the first portion 237 may be equal to the thickness dimension of the second portion 238.
  • the thickness dimension of the first portion 237 is 1/2 or less of the thickness dimension of the second portion 238.
  • the thickness dimension of the first portion 237 is 1/3 or less of the thickness dimension of the second portion 238.
  • the thickness dimension of the first portion 237 is 1/4 or more of the thickness dimension of the second portion 238.
  • the thickness dimension of the first portion 237 is 1/4 or more and 3/4 or less of the thickness dimension (size in the Z direction) of the second chip 70.
  • the width H2 of the step portion 239 is equal to each other on the first to fourth substrate side surfaces 233 to 236.
  • the width H2 of the step portion 239 is, for example, about 3 ⁇ m.
  • the width H2 of the step portion 239 can be defined, for example, by the distance between the portion of the first substrate side surface 233 that corresponds to the first portion 237 and the portion that corresponds to the second portion 238.
  • FIG. 28 shows a schematic cross-sectional structure of the third die pad 50B and the third chip 80 cut in the XZ plane
  • FIG. 29 shows a schematic cross-sectional structure of the third die pad 50B and the third chip 80 cut in the YZ plane.
  • the wires WF, WG and the sealing resin 90 are omitted in the cross-sectional structures of FIG. 28 and FIG. 29.
  • the third chip 80 mounted on the third die pad 50B includes a substrate 330.
  • the substrate 330 is formed of, for example, a semiconductor substrate.
  • the substrate 330 is a semiconductor substrate formed of a material containing silicon. Note that the substrate 330 may use a wide band gap semiconductor or a compound semiconductor as a semiconductor substrate. Also, instead of a semiconductor substrate, the substrate 330 may use an insulating substrate formed of a material containing glass, or an insulating substrate formed of a material containing ceramics such as alumina.
  • the wide bandgap semiconductor is a semiconductor substrate having a bandgap of 2.0 eV or more.
  • the wide bandgap semiconductor may be any one of silicon carbide, gallium nitride, and gallium oxide.
  • the compound semiconductor may be a III-V compound semiconductor.
  • the compound semiconductor may include at least one of aluminum nitride, indium nitride, gallium nitride, and gallium arsenide.
  • the substrate 330 of the third chip 80 has first to fourth substrate side surfaces 333 to 336 that connect the substrate surface 331 and substrate back surface 332.
  • the first substrate side surface 333 constitutes part of the first chip side surface 83 of the third chip 80
  • the second substrate side surface 334 constitutes part of the second chip side surface 84
  • the third substrate side surface 335 constitutes part of the third chip side surface 85
  • the fourth substrate side surface 336 constitutes part of the fourth chip side surface 86.
  • the substrate back surface 332 constitutes the chip back surface 82 of the third chip 80.
  • the substrate 330 can be divided into a first portion 337 and a second portion 338 by a step portion 339.
  • the first portion 337 is a portion of the substrate 330 that is closer to the third die pad 50B.
  • the second portion 338 is a portion that is provided on the first portion 337.
  • the step portion 339 is formed around the entire periphery of the substrate 330.
  • the thickness dimension (size in the Z direction) of the first portion 337 is greater than the thickness dimension (size in the Z direction) of the second portion 338. In one example, the thickness dimension of the first portion 337 is more than twice the thickness dimension of the second portion 338. In one example, the thickness dimension of the first portion 337 is more than three times the thickness dimension of the second portion 338. In one example, the thickness dimension of the first portion 337 is less than four times the thickness dimension of the second portion 338.
  • the third conductive bonding material SD3 is interposed between the first portion 337 and the third die pad 50B in the Z direction, and has a portion that protrudes from the third chip 80 in a direction perpendicular to the Z direction.
  • This protruding portion forms a third fillet SDC between the first portion 337.
  • the third fillet SDC is not formed in the second portion 338 due to the step portion 339.
  • the third fillet SDC is formed over the entire first portion 337 in the Z direction.
  • the height dimension (size in the Z direction) of the third fillet SDC can be changed as desired within a range lower than the step portion 339.
  • the height dimension of the third fillet SDC may be approximately 1/2 the thickness dimension of the first portion 337.
  • the position of the step portion 339 in the third chip 80 in the Z direction can be changed arbitrarily.
  • the relationship between the thickness dimension of the first portion 337 and the thickness dimension of the second portion 338 can be changed arbitrarily.
  • the thickness dimension of the first portion 337 may be equal to the thickness dimension of the second portion 338.
  • the thickness dimension of the first portion 337 is 1/2 or less of the thickness dimension of the second portion 338.
  • the thickness dimension of the first portion 337 is 1/3 or less of the thickness dimension of the second portion 338.
  • the thickness dimension of the first portion 337 is 1/4 or more of the thickness dimension of the second portion 338.
  • the thickness dimension of the first portion 337 is 1/4 or more and 3/4 or less of the thickness dimension (size in the Z direction) of the third chip 80.
  • the width H3 of the step portion 339 is equal on the first to fourth substrate sides 333 to 336.
  • the width H3 of the step portion 339 is, for example, about 3 ⁇ m.
  • the width H3 of the step portion 339 can be defined, for example, by the distance between the portion of the first substrate side 333 that corresponds to the first portion 337 and the portion that corresponds to the second portion 338.
  • the Z-direction positions of step portions 139, 239, 339 are determined individually for first chip 60, second chip 70, and third chip 80, so the distance in the Z direction between first die pad 30 and step portion 139, the distance in the Z direction between second die pad 50A and step portion 239, and the distance in the Z direction between third die pad 50B and step portion 339 may differ from one another.
  • the ratio of the thickness dimension of the second portion 138 to the thickness dimension of the first portion 137 of the first chip 60, the ratio of the thickness dimension of the second portion 238 to the thickness dimension of the first portion 237 of the second chip 70, and the ratio of the thickness dimension of the second portion 338 to the thickness dimension of the first portion 337 of the third chip 80 may be different.
  • the ratio of the thickness dimension of the second portion 138 to the thickness dimension of the first portion 137 of the first chip 60 may be 1/3, and both the ratio of the thickness dimension of the second portion 238 to the thickness dimension of the first portion 237 of the second chip 70 and the ratio of the thickness dimension of the second portion 338 to the thickness dimension of the first portion 337 of the third chip 80 may be 1.
  • the manufacturing method of the first chip 60 includes a step of preparing a substrate 830, a step of forming an element insulating layer 850 on the substrate 830, a step of forming a passivation film 861, a step of forming a protective film 862, and a step of singulating.
  • Figs. 30 to 33 show a schematic cross-sectional structure of the first chip 60.
  • the hatched lines of the passivation film 861 and the protective film 862 are omitted in order to facilitate understanding of the drawings.
  • the second chip 70 and the third chip 80 are also manufactured in the same manner as the first chip 60, so an example of a manufacturing process for the second chip 70 and the third chip 80 will not be described.
  • a substrate 830 including a plurality of substrates 130 is prepared.
  • the first transmitting unit 501, the second transmitting unit 502, the logic unit 503, the LDO unit 504, the UVLO unit 505, the delay unit 506, the Schmitt triggers 507 and 508, and the resistors 509 and 510 shown in FIG. 9 are formed.
  • a SiO 2 film is laminated on a substrate surface 831 of the substrate 830 by, for example, a CVD method.
  • the SiO 2 film is a film that constitutes the element insulating layer 850.
  • the element insulating layer 850 is constituted by, for example, a laminated structure of a plurality of SiO 2 films.
  • a process of forming the first to fourth rear surface side coils 111B to 114B is carried out, for example, by sputtering and etching. Then, after the process of forming the first to fourth rear surface side coils 111B to 114B is carried out, the process of forming the element insulating layer 850 on the substrate 830 is carried out again.
  • a process is carried out to form the first to fourth surface side coils 111A to 114A and the first to third electrode pads 67 to 69 by sputtering and etching.
  • the passivation film 861 is formed on the element insulating layer 850 by, for example, a CVD method.
  • the passivation film 861 also covers the second to fourth surface side coils 112A to 114A and the first to third electrode pads 67 to 69.
  • the protective film 862 is formed on the passivation film 861, for example, by a CVD method.
  • the protective film 862 is formed, for example, over the entire surface of the passivation film 861.
  • openings are formed, for example by etching, in both the protective film 862 and the passivation film 861 at positions that overlap with portions of each of the first to third electrode pads 67 to 69. As a result, portions of the first to third electrode pads 67 to 69 are exposed in the Z direction from both the protective film 862 and the passivation film 861.
  • the step of dividing into individual pieces includes a first dicing step and a second dicing step.
  • the substrate 830 is placed on the dicing tape DT.
  • a substrate back surface 832 of the substrate 830 is in contact with the dicing tape DT.
  • the protective film 862, the passivation film 861, and the element insulating layer 850 are cut by the first dicing blade DB1, and a part of the substrate 830 in the Z direction is cut. As a result, a recess 833 is formed in the substrate 830.
  • the substrate 830 is cut by the second dicing blade DB2.
  • the second dicing blade DB2 is a blade that is narrower than the first dicing blade DB1.
  • the second dicing blade DB2 cuts the substrate 830 from the recess 833 of the substrate 830. As a result, a step portion 839 is formed in the substrate 830.
  • the dicing tape DT is then removed. Through the above processes, the first chip 60 is manufactured.
  • Substrate 130 of first chip 60 has a first portion 137 including a back surface 132 of the substrate, a second portion 138 provided on first portion 137, and a step portion 139 formed so that second portion 138 is positioned inside substrate 130 relative to first portion 137.
  • the step portion 139 can prevent the first conductive bonding material SD1 from creeping up onto the chip surface 61 of the first chip 60.
  • the substrate 230 of the second chip 70 has a first portion 237 including the rear surface 232 of the substrate, a second portion 238 provided on the first portion 237, and a step portion 239 formed so that the second portion 238 is positioned inside the substrate 230 relative to the first portion 237.
  • the step portion 239 can prevent the second conductive bonding material SD2 from creeping up onto the chip surface 71 of the second chip 70.
  • the substrate 330 of the third chip 80 has a first portion 337 including the rear surface 332 of the substrate, a second portion 338 provided on the first portion 337, and a step portion 339 formed so that the second portion 338 is positioned inside the substrate 330 relative to the first portion 337.
  • the step portion 339 can prevent the third conductive bonding material SD3 from creeping up onto the chip surface 81 of the third chip 80.
  • a signal transmission device 10 of the sixth embodiment will be described with reference to Figures 34 to 38.
  • the signal transmission device 10 of the sixth embodiment is different from the signal transmission device 10 of the first embodiment in the configuration of the first chip 60.
  • the differences in the configuration of the first chip 60 from the first embodiment will be described in detail.
  • the same reference numerals are used for the components common to the first embodiment, and the description thereof will be omitted.
  • a passivation film 161 is formed on the layer surface 151 of the element insulating layer 150, while a plurality of first electrode pads 67 are not formed on the layer surface 151.
  • the passivation film 161 is in contact with the layer surface 151, and the plurality of first electrode pads 67 are disposed at a distance from the layer surface 151 in the Z direction.
  • the passivation film 161 is formed over the entire layer surface 151 of the element insulating layer 150.
  • the first chip 60 further includes a first organic insulating layer 191 formed on the passivation film 161, and a second organic insulating layer 192 formed on the first organic insulating layer 191.
  • the first organic insulating layer 191 corresponds to the "first resin layer”
  • the second organic insulating layer 192 corresponds to the "second resin layer.”
  • Both the first organic insulating layer 191 and the second organic insulating layer 192 are formed of an insulating material having a relative dielectric constant different from that of the element insulating layer 150.
  • Both the first organic insulating layer 191 and the second organic insulating layer 192 may contain at least one of polyimide, phenolic resin, and epoxy resin.
  • the first organic insulating layer 191 and the second organic insulating layer 192 may be formed of the same resin material or different resin materials.
  • the first surface side coil 111A and the first electrode pads 67 are formed on the first organic insulating layer 191. In other words, both the first surface side coil 111A and the first electrode pads 67 are provided outside the element insulating layer 150. It can also be said that both the first surface side coil 111A and the first electrode pads 67 are arranged at a distance from the element insulating layer 150 in the Z direction. The first surface side coil 111A and the first electrode pads 67 are provided at the same positions as each other in the Z direction.
  • the second to fourth surface side coils 112A to 114A are also formed on the first organic insulating layer 191. In this way, the first to fourth surface side coils 111A to 114A correspond to "surface side coils".
  • the first surface side coil 111A and the multiple first electrode pads 67 are covered by a second organic insulating layer 192.
  • the second organic insulating layer 192 has an opening 192A that exposes a portion of the surface of each first electrode pad 67 in the Z direction.
  • the second organic insulating layer 192 is a protective film that protects the first chip 60 and constitutes the chip surface 61.
  • the coil back surface 172 of the conductor 170 of the first surface side coil 111A is in contact with the first organic insulating layer 191.
  • the first surface side coil 111A is covered with the first organic insulating layer 191 and the second organic insulating layer 192.
  • the second organic insulating layer 192 is in contact with the coil front surface 171 and a pair of coil side surfaces 173 of the conductor 170.
  • the second organic insulating layer 192 is interposed between adjacent conductors 170 in the Y direction of the first surface side coil 111A.
  • the thickness of the second organic insulating layer 192 is thinner than the thickness of the element insulating layer 150.
  • the thickness of the second organic insulating layer 192 is thinner than the distance in the Z direction between the coil surface 181 of the conductor 180 in the coil layer 111BA of the first back side coil 111B and the layer surface 151 of the element insulating layer 150.
  • the thickness of the second organic insulating layer 192 is thicker than the thickness of the conductor 180.
  • the thickness of the second organic insulating layer 192 is thicker than the thickness of the conductor 170.
  • the thickness of the second organic insulating layer 192 is thicker than the thickness of the first electrode pad 67A (the size of the first electrode pad 67A in the Z direction).
  • the first back side coil 111B is embedded in the element insulating layer 150, as in the first embodiment.
  • the first back side coil 111B is disposed closer to the layer back surface 152 of the element insulating layer 150.
  • the second to fourth back side coils 112B to 114B are also embedded in the element insulating layer 150.
  • the first to fourth back side coils 111B to 114B correspond to "back side coils”.
  • both the element insulating layer 150 and the first organic insulating layer 191 are interposed between the first front side coil 111A and the first back side coil 111B in the Z direction.
  • both an inorganic insulating layer and an organic insulating layer are interposed between the first front side coil 111A and the first back side coil 111B in the Z direction.
  • three different layers, the element insulating layer 150, the passivation film 161, and the first organic insulating layer 191 are interposed between the first front side coil 111A and the first back side coil 111B in the Z direction.
  • the front-side guard ring 115 (see FIG. 11) is formed on the first organic insulating layer 191. That is, the front-side guard ring 115 is provided at the same position in the Z direction as the first front-side coil 111A and the first electrode pad 67A.
  • the via 117 is configured by a laminated structure of a first portion, a second portion, and a third portion. The first portion penetrates in the Z direction from the back-side guard ring 116 (see FIG. 13) to the layer surface 151 of the element insulating layer 150. The first portion is in contact with the back-side guard ring 116.
  • the second portion penetrates the passivation film 161 in the Z direction to connect to the first portion and is formed on the passivation film 161.
  • the second portion is covered by the first organic insulating layer 191.
  • the third portion penetrates in the Z direction through a portion of the first organic insulating layer 191 that covers the second portion and connects to both the second portion and the front-side guard ring 115.
  • the first chip 60 has a two-layer laminate structure of the first organic insulating layer 191 and the second organic insulating layer 192, but this is not limited to this.
  • the first chip 60 may have a structure in which three or more organic insulating layers are laminated.
  • FIG. 36 to 38 a method for manufacturing the first chip 60, in particular a method for manufacturing the first surface side coil 111A will be described.
  • Figures 36 to 38 mainly show a process for forming a part of the first surface side coil 111A in the element insulating layer 850.
  • the manufacturing method of the first chip 60 includes the steps of preparing a substrate 830, forming an element insulating layer 850 on the substrate 830, forming a first back side coil 111B on the element insulating layer 850, and forming a passivation film 861 on the element insulating layer 850.
  • the second to fourth back side coils 112B to 114B are formed simultaneously with the step of forming the first back side coil 111B.
  • the substrate 830 is a substrate that constitutes the multiple substrates 130.
  • the element insulating layer 850 is formed over an area that corresponds to the multiple substrates 130.
  • the element insulating layer 850 corresponds to the element insulating layer 150 of the first chip 60.
  • the passivation film 861 is formed over the entire surface of the element insulating layer 850.
  • the passivation film 861 corresponds to the passivation film 161 of the first chip 60.
  • the manufacturing method of the first chip 60 includes a step of forming a first organic insulating layer 891. More specifically, the first organic insulating layer 891 is formed on the passivation film 861 by, for example, a spin coating method.
  • the first organic insulating layer 891 may contain at least one of polyimide, phenolic resin, and epoxy resin.
  • the first organic insulating layer 891 corresponds to the first organic insulating layer 191 of the first chip 60.
  • the manufacturing method of the first chip 60 includes a step of forming the first surface side coil 111A and the first electrode pad 67A. More specifically, a barrier layer (not shown) constituting the first surface side coil 111A and the first electrode pad 67A is formed on the first organic insulating layer 191, for example, by sputtering.
  • the barrier layer is a base conductive layer for plating the conductor 170 and the first electrode pad 67.
  • the barrier layer may contain at least one of titanium, titanium nitride, tantalum, and tantalum nitride, for example.
  • the barrier layer is removed from the positions other than the positions where the conductor 170 and the first electrode pad 67 of the first surface side coil 111A are to be formed, for example, by lithography and etching.
  • a conductive material constituting the conductor 170 and the first electrode pad 67 is plated on the barrier layer.
  • copper is used as the conductive material.
  • the manufacturing method of the first chip 60 includes a step of forming a second organic insulating layer 892. More specifically, the second organic insulating layer 892 is formed on the first organic insulating layer 891 by, for example, spin coating. The second organic insulating layer 892 is formed so as to cover the first surface side coil 111A and the first electrode pad 67. Although not shown, the second organic insulating layer 892 is formed so as to cover the second to fourth surface side coils 112A to 114A and the other first electrode pads 67. Next, an opening 892A that opens a part of the first electrode pad 67A in the Z direction is formed in the second organic insulating layer 892 by lithography and etching. Note that openings that open a part of each of the other first electrode pads 67 in the Z direction are also formed at the same time.
  • the manufacturing method of the first chip 60 includes a singulation process.
  • the substrate 830, the passivation film 861, the first organic insulating layer 891, and the second organic insulating layer 892 are cut by dicing. Through the above processes, the first chip 60 is manufactured.
  • the first chip 60 includes a first organic insulating layer 191 provided on the element insulating layer 150, and a second organic insulating layer 192 provided on the first organic insulating layer 191.
  • the first transformer 111 includes first to fourth front surface side coils 111A to 114A that are disposed on the first organic insulating layer 191 and covered by the second organic insulating layer 192, and first to fourth back surface side coils 111B to 114B that are disposed opposite the first to fourth front surface side coils 111A to 114A in the Z direction and embedded in the element insulating layer 150.
  • the distance in the Z direction between the first to fourth front side coils 111A to 114A and the first to fourth back side coils 111B to 114B can be increased by thickening the first organic insulating layer 191.
  • the insulation withstand voltage between the first to fourth front side coils 111A to 114A and the first to fourth back side coils 111B to 114B can be improved by thickening the first organic insulating layer 191.
  • the configuration of the element insulating layer 150 can be simplified.
  • the first organic insulating layer 191 can be easily thickened by a spin coating method. As a result, the lead time can be shortened compared to when the element insulating layer 150 is thickened, and the manufacturing cost can be reduced.
  • a signal transmission device 10 of the seventh embodiment will be described with reference to Fig. 39.
  • the signal transmission device 10 of the seventh embodiment is different from the signal transmission device 10 of the first embodiment in the configuration of the first chip 60.
  • the differences in the configuration of the first chip 60 from the first embodiment will be described in detail. Also, the same reference numerals are used for the components common to the first embodiment, and the description thereof will be omitted.
  • the first chip 60 includes a low dielectric layer 193 having a lower dielectric constant than the passivation film 161.
  • the low dielectric layer 193 is formed on the passivation film 161.
  • the low dielectric layer 193 is formed over the entire surface of the passivation film 161.
  • the low dielectric layer 193 is in contact with the surface of the passivation film 161. It can be said that the low dielectric layer 193 is interposed between the passivation film 161 and the sealing resin 90 in the Z direction so that the passivation film 161 and the sealing resin 90 do not come into contact with each other.
  • the thickness of the low dielectric layer 193 (the size of the low dielectric layer 193 in the Z direction) is equal to or less than the thickness of the passivation film 161. In one example, the thickness of the low dielectric layer 193 is thinner than the thickness of the passivation film 161. The thickness of the low dielectric layer 193 can be changed as desired. In one example, the thickness of the low dielectric layer 193 may be thicker than the thickness of the passivation film 161.
  • the protective film 162 is formed on the low dielectric layer 193.
  • the protective film 162 is in contact with the surface of the low dielectric layer 193.
  • the low dielectric layer 193 is sandwiched in the Z direction between the passivation film 161 and the protective film 162.
  • the protective film 162 is in contact with the sealing resin 90.
  • the thickness of the protective film 162 is thicker than the thickness of the low dielectric layer 193. In other words, the thickness of the low dielectric layer 193 is thinner than the thickness of the protective film 162.
  • the element insulating layer 150 is made of a material containing silicon oxide (SiO 2 ), and therefore the relative dielectric constant of the element insulating layer 150 is about 4.1.
  • the passivation film 161 is made of a material containing silicon nitride (SiN), and therefore the relative dielectric constant of the passivation film 161 is about 7.0. In other words, the relative dielectric constant of the passivation film 161 is higher than the relative dielectric constant of the element insulating layer 150.
  • the relative dielectric constant of the protective film 162 is about 2.9.
  • the sealing resin 90 is made of a material containing epoxy resin, the relative dielectric constant of the sealing resin 90 is about 3.9. That is, the relative dielectric constant of the sealing resin 90 is lower than the dielectric constant of the passivation film 161. The relative dielectric constant of the sealing resin 90 is higher than the dielectric constant of the protective film 162.
  • the low dielectric layer 193 has a lower dielectric constant than the passivation film 161.
  • the low dielectric layer 193 is equal to or lower than the dielectric constant of the element insulating layer 150. More specifically, the low dielectric layer 193 is lower than the dielectric constant of the element insulating layer 150.
  • the low dielectric layer 193 may be equal to or lower than the dielectric constant of the sealing resin 90.
  • the low dielectric layer 193 may be formed of a material containing silicon oxide (SiO 2 ), for example. In this way, the low dielectric layer 193 may be formed of the same material as the element insulating layer 150. The low dielectric layer 193 may have a lower dielectric constant than the element insulating layer 150.
  • the low dielectric layer 193 may be formed of a low-K film.
  • the low-K film may be appropriately selected from, for example, a carbon-added silicon oxide film (SiOC), a fluorine-added silicon oxide film (SiOF), a porous film, and the like.
  • the low dielectric layer 193 When the low dielectric layer 193 is formed of a carbon-added silicon oxide film, the low dielectric layer 193 has a dielectric constant of 2.5 or more and 3.0 or less. When the low dielectric layer 193 is formed of a fluorine-added silicon oxide film, the low dielectric layer 193 has a dielectric constant of 3.4 or more and 3.8 or less. When the low dielectric layer 193 is formed of a porous film, the low dielectric layer 193 has a dielectric constant of less than 2.5. In this manner, by using a Low-K film for the low dielectric layer 193 , the relative dielectric constant of the low dielectric layer 193 can be made lower than those of the element insulating layer 150 and the sealing resin 90 .
  • the first chip 60 includes an element insulating layer 150, a passivation film 161 formed on the element insulating layer 150 so as to cover the element insulating layer 150, and a low dielectric layer 193 formed on the surface of the passivation film 161 and having a relative dielectric constant lower than that of the passivation film 161.
  • the sealing resin 90 covers the low dielectric layer 193.
  • the low dielectric layer 193 is interposed between the passivation film 161 and the sealing resin 90, thereby preventing contact between the passivation film 161 and the sealing resin 90. This makes it possible to prevent partial discharges, and in turn, creeping discharges, caused by gaps that exist at the boundary between the sealing resin 90 and the passivation film 161. This makes it possible to improve the reliability of the first chip 60.
  • the relative dielectric constant of the low dielectric layer 193 is equal to or lower than the dielectric constant of the sealing resin 90 . According to this configuration, the inception voltage of partial discharge at the boundary between the low dielectric layer 193 and the sealing resin 90 can be increased, thereby suppressing the occurrence of partial discharge, and ultimately creeping discharge, due to gaps existing at the boundary between the low dielectric layer 193 and the sealing resin 90.
  • the thickness of the low dielectric layer 193 is equal to or less than the thickness of the passivation film 161. This configuration prevents the dimension of the first chip 60 in the Z direction from becoming large. In other words, the height of the first chip 60 can be reduced.
  • a signal transmission device 10 of the eighth embodiment will be described with reference to Figures 40 to 46.
  • the signal transmission device 10 of the eighth embodiment is different from the signal transmission device 10 of the first embodiment in the configuration of the first chip 60.
  • the differences in the configuration of the first chip 60 from the first embodiment will be described in detail.
  • the same reference numerals are used for the components common to the first embodiment, and the description thereof will be omitted.
  • Fig. 40 shows an enlarged cross-sectional structure of a part of the first surface side coil 111A and its surroundings in the first chip 60. Note that, in order to make the drawing easier to understand, hatching lines of some of the components of the first chip 60 are omitted in Fig. 40.
  • the surface side corner portion 176 formed by the coil surface 171 and the pair of coil side surfaces 173 of the conductor 170 of the first surface side coil 111A is formed in a rounded curved shape, unlike the first embodiment.
  • the surface side corner portion 176 can also be said to have an R surface (curved surface). That is, in the eighth embodiment, an R surface (curved surface) is formed in the portion between the coil surface 171 and the pair of coil side surfaces 173 of the conductor 170. More specifically, the R surface (curved surface) is formed by both the barrier layer 174 and the metal layer 175 that make up the surface side corner portion 176.
  • the coil surface 171 of the conductor 170 is located above the layer surface 151 of the element insulating layer 150. In other words, the conductor 170 protrudes from the layer surface 151 of the element insulating layer 150.
  • the passivation film 161 covers the surface side corner portion 176 and the coil surface 171 of the conductor 170. Therefore, the surface side corner portion 176 is not in contact with the element insulating layer 150, but is in contact with the passivation film 161.
  • the portion of the pair of coil side surfaces 173 of the conductor 170 that is closer to the coil back surface 172 than the surface side corner portion 176 is in contact with the element insulating layer 150.
  • the relationship between the conductor 170 and the element insulating layer 150 can be changed as desired.
  • the conductor 170 may be embedded in the element insulating layer 150.
  • the element insulating layer 150 may be provided so that the surface side corner portion 176 of the conductor 170 and the coil surface 171 are in contact with the element insulating layer 150.
  • a passivation film 161 is formed over the entire surface of the layer surface 151 of the element insulating layer 150.
  • the conductor 170 of the second to fourth surface side coils 112A to 114A also has a surface side corner portion 176 formed by the coil surface 171 and a pair of coil side surfaces 173, which is rounded and curved.
  • the configuration of the first to fourth surface side coils 111A to 114A can be changed as desired. In other words, in the eighth embodiment, it is sufficient that the surface side corner portion 176 of at least one of the first to fourth surface side coils 111A to 114A is rounded and curved.
  • FIG. 41 to 46 a method for manufacturing the first chip 60, in particular a method for manufacturing the first surface side coil 111A will be described.
  • Figures 41 to 46 mainly show a process for forming a part of the first surface side coil 111A in the element insulating layer 850.
  • the method of manufacturing the first chip 60 includes the steps of preparing a substrate 830, forming an element insulating layer 850 on the substrate 830 (see FIG. 30, for example), and forming a first back side coil 111B (see FIG. 35) on the element insulating layer 850. Note that the second to fourth back side coils 112B to 114B are formed simultaneously with the step of forming the first back side coil 111B.
  • the manufacturing method of the first chip 60 includes a step of forming a recess 853 in the element insulating layer 850. More specifically, in this step, the layer surface 851 of the element insulating layer 850 is selectively etched to form the recess 853.
  • the recess 853 includes a bottom surface 853A and a pair of side surfaces 853B connecting the bottom surface 853A and the layer surface 851.
  • the pair of side surfaces 853B are formed in a tapered shape approaching each other in the Y direction from the layer surface 851 toward the bottom surface 853A.
  • the method for manufacturing the first chip 60 includes a step of forming a barrier layer 901. More specifically, the barrier layer 901 is formed on both the pair of side surfaces 853B and the bottom surface 853A of the recess 853 and the layer surface 851 of the element insulating layer 850, for example, by a sputtering method.
  • the barrier layer 901 may contain tantalum or tantalum nitride.
  • the barrier layer 901 is formed of a laminated structure (Ta/TaN/Ta) of a first layer containing tantalum, a second layer containing tantalum nitride laminated on the first layer, and a third layer containing tantalum laminated on the second layer.
  • the manufacturing method of the first chip 60 includes a step of forming a metal layer 902. More specifically, a conductive material for the conductor 170 is plated and grown from the barrier layer 901. In one example, copper is plated and grown from the barrier layer 901. This forms the metal layer 902 in the recess 853 and on the element insulating layer 850.
  • the metal layer 902 is formed, for example, from a material containing copper.
  • the method for manufacturing the first chip 60 includes a step of removing the barrier layer 901 and the metal layer 902 on the element insulating layer 850. More specifically, both the barrier layer 901 and the metal layer 902 on the element insulating layer 850 are removed by chemical mechanical polishing (CMP). This exposes the layer surface 851 of the element insulating layer 850.
  • CMP chemical mechanical polishing
  • the manufacturing method of the first chip 60 includes a step of removing the upper end of the element insulating layer 850. More specifically, the entire upper end of the element insulating layer 850 is removed by dry etching or wet etching. As a result, the layer surface 851 after the upper end of the element insulating layer 850 is removed is located lower (closer to the bottom surface 853A of the recess 853) than the respective upper end surfaces of the barrier layer 901 and the metal layer 902. In other words, the upper ends of the barrier layer 901 and the metal layer 902 protrude from the layer surface 851.
  • the manufacturing method of the first chip 60 includes a process of forming curved surfaces at both ends in the Y direction (surface side corner portions 903 in FIG. 44) of the upper ends of the barrier layer 901 and the metal layer 902. More specifically, a resist (not shown) is formed on the upper end surface of the metal layer 902. The resist is formed so that the surface side corner portions 903 are exposed in a plan view. Next, the barrier layer 901 and the metal layer 902 that constitute the surface side corner portions 903 are removed by dry etching or wet etching. As a result, the surface side corner portions 903 are formed in a curved shape. Through the above process, the conductor 170 is formed. As a result, the first to fourth surface side coils 111A to 114A are formed. Although not shown, a plurality of first electrode pads 67 are formed in parallel with the process of forming the conductor 170 shown in FIG. 41 to FIG. 45.
  • the manufacturing method of the first chip 60 includes a step of forming a passivation film 861. More specifically, the passivation film 861 is formed so as to cover the coil surface 171 and the surface side corner portion 176 of the conductor 170 and the layer surface 851 of the element insulating layer 850, for example, by chemical vapor deposition (CVD) or sputtering.
  • the passivation film 861 is formed of a material containing, for example, silicon nitride.
  • the manufacturing method of the first chip 60 includes a process of forming a protective film 862 (see FIG. 31).
  • the protective film 862 is formed on the passivation film 861 by CVD or sputtering.
  • the protective film 862 is formed of a material containing silicon oxide, for example.
  • openings that expose parts of the first electrode pads 67 are formed in both the protective film 862 and the passivation film 861 by etching.
  • the protective film 862, the passivation film 861, the element insulating layer 850, and the substrate 830 are cut by dicing to separate them into individual chips. Through the above processes, the first chip 60 is manufactured.
  • the first to fourth surface side coils 111A to 114A of the first transformer 111 have a coil front surface 171, a coil back surface 172 opposite the coil front surface 171, and a coil side surface 173 connecting the coil front surface 171 and the coil back surface 172.
  • a curved surface is formed between the coil front surface 171 and the coil side surface 173.
  • This configuration can reduce electric field concentration at the surface corner portion 176, which is formed by the coil surface 171 and the coil side surface 173. This prevents the surface corner portion 176 from becoming the starting point of dielectric breakdown, thereby improving the dielectric strength of the first chip 60.
  • Ninth embodiment A signal transmission device 10 of the ninth embodiment will be described with reference to Figures 47 to 52.
  • the signal transmission device 10 of the ninth embodiment is different from the signal transmission device 10 of the sixth embodiment in the configuration of the first chip 60.
  • the differences in the configuration of the first chip 60 from the sixth embodiment will be described in detail.
  • the same reference numerals are used for the components common to the sixth embodiment, and the description thereof will be omitted.
  • FIG. 47 shows an enlarged cross-sectional structure of a part of the first surface side coil 111A in the first chip 60 and its surrounding area.
  • the first chip 60 of the ninth embodiment includes a first organic insulating layer 191 formed on the layer surface 151 of the element insulating layer 150, and a second organic insulating layer 192 formed on the first organic insulating layer 191. Both the first surface side coil 111A and the first electrode pad 67A are formed on the first organic insulating layer 191, like the sixth embodiment.
  • the surface side corner portion 176 formed by the coil surface 171 and the pair of coil side surfaces 173 of the conductor 170 of the first surface side coil 111A is formed in a rounded curved shape, unlike the first embodiment.
  • the surface side corner portion 176 can also be said to have an R surface (curved surface).
  • an R surface (curved surface) is formed in the portion between the coil surface 171 and the pair of coil side surfaces 173 of the conductor 170.
  • the coil surface 171 of the conductor 170 is located above the layer surface 151 of the element insulating layer 150. In other words, the conductor 170 protrudes from the layer surface 151 of the element insulating layer 150.
  • the passivation film 161 covers the surface side corner portion 176 and the coil surface 171 of the conductor 170. Therefore, the surface side corner portion 176 is not in contact with the element insulating layer 150, but is in contact with the passivation film 161.
  • the portion of the pair of coil side surfaces 173 of the conductor 170 that is closer to the coil back surface 172 than the surface side corner portion 176 is in contact with the element insulating layer 150.
  • the back side corner portion 177 formed by the coil back side 172 and the pair of coil side surfaces 173 of the conductor 170 is formed in a rounded curved shape, unlike the first embodiment.
  • the back side corner portion 177 can also be said to have an R surface (curved surface).
  • an R surface (curved surface) is formed in the portion of the conductor 170 between the coil back side 172 and the pair of coil side surfaces 173.
  • the conductor 170 is covered by the second organic insulating layer 192. More specifically, the coil surface 171, the pair of coil side surfaces 173, the front side corner portion 176, and the back side corner portion 177 of the conductor 170 are in contact with the second organic insulating layer 192.
  • the conductive wire 170 is formed by a laminated structure of a seed layer 178 and a metal layer 179 formed on the seed layer 178 .
  • the seed layer 178 constitutes the coil back surface 172. That is, the seed layer 178 is in contact with the first organic insulating layer 191.
  • the seed layer 178 may contain at least one of titanium, titanium nitride, and copper, for example.
  • the seed layer 178 is formed by a laminated structure of a first layer containing titanium and a second layer containing copper laminated on the first layer.
  • the metal layer 179 is disposed at a distance from the first organic insulating layer 191 in the Z direction.
  • the metal layer 179 includes a coil surface 171, a pair of coil side surfaces 173, a surface side corner portion 176, and a back side corner portion 177.
  • the metal layer 179 is covered with a second organic insulating layer 192.
  • Method of manufacturing the first chip A method for manufacturing the first chip 60, particularly a method for manufacturing the first surface side coil 111A, will be described with reference to FIGS.
  • the method of manufacturing the first chip 60 includes the steps of preparing a substrate 830 (see, for example, FIG. 30), forming an element insulating layer 850 on the substrate 130, forming a first back side coil 111B (see, for example, FIG. 31) on the element insulating layer 850, forming a passivation film 861, and forming a first organic insulating layer 891.
  • the second to fourth back side coils 112B to 114B are formed simultaneously with the step of forming the first back side coil 111B.
  • the passivation film 861 is formed on the layer surface 851 of the element insulating layer 850 by, for example, a CVD method or a sputtering method.
  • the first organic insulating layer 891 is formed on the passivation film 161 by, for example, a spin coating method.
  • the method for manufacturing the first chip 60 includes a step of forming a seed layer 911. More specifically, the seed layer 911 is formed on the first organic insulating layer 891 by, for example, a sputtering method.
  • the seed layer 911 may contain titanium and copper.
  • the seed layer 911 is formed of a laminated structure (Ti/Cu) of a first seed layer 911A containing titanium and a second seed layer 911B containing copper laminated on the first seed layer 911A.
  • the method for manufacturing the first chip 60 includes a step of forming a resist 920. More specifically, first, a resist 920 is formed on the seed layer 911. Next, the resist 920 is selectively exposed to light and developed to form openings 921 that expose the portions where the conductive wires 170 (see FIG. 47) are to be formed and the portions where the first electrode pads 67 (see FIG. 34) are to be formed.
  • FIG. 48 shows an opening 921 where the conductor 170 is to be formed.
  • the surfaces of the resist 920 constituting the opening 921 are tapered so that they approach each other toward the seed layer 911.
  • the portion of the opening 921 of the resist 920 that contacts the seed layer 911 has an inward protrusion 922 that is curved and concave.
  • the method for manufacturing the first chip 60 includes a step of forming a metal layer 912. More specifically, a conductive material for the conductor 170 is plated from the seed layer 911. In one example, copper is plated from the seed layer 911. This forms a metal layer 912 in the opening 921.
  • the metal layer 912 is formed of a material containing copper, for example.
  • the metal layer 912 is integrated with the second seed layer 911B.
  • the interface between the second seed layer 911B and the metal layer 912 is shown by a two-dot chain line to make the drawing easier to understand. However, in reality, this interface may not be formed.
  • the metal layer 912 is formed in the opening 921 where the first electrode pad 67 is to be formed. This produces the first electrode pad 67.
  • the end of the metal layer 912 on the seed layer 911 side has a rounded corner formed by the inward protrusion 922 of the resist 920 to form an R surface (curved surface).
  • the metal layer 912 is formed with an R surface (curved surface) that corresponds to the rear side corner portion 177 of the conductor 170.
  • the method for manufacturing the first chip 60 includes a step of removing the resist 920 (see FIG. 49), thereby exposing the seed layer 911 and the metal layer 912.
  • the manufacturing method of the first chip 60 includes a step of etching the seed layer 911 and the metal layer 912.
  • this step includes a step of forming curved surfaces at both ends in the Y direction of the upper end of the metal layer 912 (front surface side corner portions 913 in FIG. 50) and a step of removing the second seed layer 911B of the seed layer 911.
  • a resist (not shown) is formed on the upper end surface of the metal layer 912. The resist is formed so that the front surface side corner portions 913 are exposed in a plan view.
  • the metal layer 912 constituting the front surface side corner portions 913 is removed by dry etching or wet etching.
  • the front surface side corner portions 913 are formed with rounded R surfaces (curved surfaces). That is, in this step, the metal layer 912 is formed with R surfaces (curved surfaces) corresponding to the front surface side corner portions 176 of the conductive wire 170.
  • the second seed layer 911B is removed by dry etching or wet etching.
  • the method of manufacturing the first chip 60 involves removing the seed layer 911 except for the portion where the metal layer 912 is laminated. More specifically, the seed layer 911 except for the portion where the metal layer 912 is laminated is removed by, for example, etching. Through the above steps, the conductor 170 is formed. In this way, the first surface side coil 111A is formed. The second to fourth surface side coils 112A to 114A are also formed in a similar manner.
  • the manufacturing method of the first chip 60 includes a process of forming the second organic insulating layer 192.
  • the second organic insulating layer 192 is formed on the first organic insulating layer 191 by spin coating.
  • the second organic insulating layer 192 is formed so as to cover the conductive wires 170 and the first electrode pads 67A to 67F.
  • openings are formed in the second organic insulating layer 192 by etching, through which parts of the first electrode pads 67A to 67F are exposed.
  • the first to fourth surface side coils 111A to 114A of the first transformer 111 have a coil surface 171, a coil back surface 172 opposite the coil surface 171, and a coil side surface 173 connecting the coil surface 171 and the coil back surface 172.
  • a curved surface is formed between the coil surface 171 and the coil side surface 173.
  • a curved surface is formed between the coil back surface 172 and the coil side surface 173.
  • This configuration can alleviate electric field concentration at the front side corner portion 176 formed by the coil front surface 171 and the coil side surface 173, and can alleviate electric field concentration at the back side corner portion 177 formed by the coil back surface 172 and the coil side surface 173. This prevents the front side corner portion 176 and the back side corner portion 177 from becoming the starting point of dielectric breakdown, thereby improving the dielectric strength voltage of the first chip 60.
  • At least one of the configurations of the sixth and ninth embodiments may be added to the signal transmission device 10 of the first embodiment. At least one of the configurations of the seventh and eighth embodiments may be added to the signal transmission device 10 of the first embodiment.
  • At least one of the configurations of the sixth and ninth embodiments may be added to the signal transmission device 10 in which at least one of the configurations of the second to fifth embodiments is added to the first embodiment.
  • At least one of the configurations of the seventh and eighth embodiments may be added to the signal transmission device 10 in which at least one of the configurations of the second to fifth embodiments is added to the first embodiment.
  • the first die pad 30 may be provided with one or more through holes penetrating the first die pad 30 in its thickness direction (Z direction). Each through hole is filled with sealing resin 90.
  • the second die pad 50A may be provided with one or more through holes that penetrate the second die pad 50A in its thickness direction (Z direction). Each through hole is filled with sealing resin 90.
  • the third die pad 50B may be provided with one or more through holes that penetrate the third die pad 50B in its thickness direction (Z direction). Each through hole is filled with sealing resin 90.
  • the coverage area of the plating layer 25 covering the first internal terminal portions 12B to 17B of the first terminals 12 to 17 can be changed as desired.
  • the plating layer 25 may cover the entire internal terminal surface 21 of each of the first internal terminal portions 12B to 17B.
  • a portion of the plating layer 25 may cover the tip surface 24 of the first internal terminal portions 12B to 17B.
  • the coverage area of the plating layer 25 covering the second internal terminal portions 42B, 43B of the second terminals 42, 43 can be changed as desired.
  • the plating layer 25 may cover the entire internal terminal surface 21 of each of the second internal terminal portions 42B, 43B. In this case, a portion of the plating layer 25 may cover the tip surface 24 of the second internal terminal portions 42B, 43B.
  • the coverage area of the plating layer 25 covering the third internal terminal portions 45B, 46B of the third terminals 45, 46 can be changed as desired.
  • the plating layer 25 may cover the entire internal terminal surface 21 of each of the third internal terminal portions 45B, 46B. In this case, a portion of the plating layer 25 may cover the tip surface 24 of the third internal terminal portions 45B, 46B.
  • the distance between the second terminal 43 and the third terminal 44 in the Y direction may be, for example, less than or equal to the distance between the second terminal 42 and the second terminal 43 in the Y direction.
  • the distance between the second terminal 43 and the third terminal 44 in the Y direction may be, for example, less than or equal to the distance between the third terminal 44 and the third terminal 45 in the Y direction.
  • the shortest distance between the multiple second terminals 41 to 43 and the multiple third terminals 44 to 46 may be less than or equal to the distance between adjacent second terminals in the Y direction (second direction) among the multiple second terminals 41 to 43.
  • the shortest distance between the multiple second terminals 41 to 43 and the multiple third terminals 44 to 46 may be less than or equal to the distance between adjacent third terminals in the Y direction (second direction) among the multiple third terminals 44 to 46.
  • the configuration of the first chip 60 may be changed to the first chip 60 shown in Fig. 53 and Fig. 54.
  • the first chip 60 shown in Fig. 53 and Fig. 54 has a larger ratio of the length in the longitudinal direction to the size in the lateral direction of the first chip 60 than the first chip 60 of the first embodiment.
  • the front-side outer peripheral guard ring 101 is formed in an annular shape so as to go around the outer periphery of the first chip 60.
  • the portion of the front-side outer peripheral guard ring 101 adjacent to the second chip side surface 64 in the X direction and extending in the Y direction is connected to the front-side guard ring 115.
  • the configuration of the first transformer 111 and the second transformer 112 in the insulating transformer region 110 is the same as the configuration of the first transformer 111 and the second transformer 112 in the first embodiment.
  • the circuit region 120 has a plurality of functional units and a plurality of circuit elements of the first chip 60 formed therein.
  • the plurality of functional units and the plurality of circuit elements are similar to the plurality of functional units and the plurality of circuit elements of the circuit region 120 of the first embodiment.
  • the circuit region 120 includes a first circuit unit CR1, a second circuit unit CR2, and a third circuit unit CR3.
  • a MOSFET is formed in the first circuit unit CR1 and the second circuit unit CR2.
  • the first circuit unit CR1 includes the first transmission unit 501 and the second transmission unit 502 of FIG. 9
  • the second circuit unit CR2 includes the logic unit 503, the UVLO unit 505, the LDO unit 504, and the delay unit 506 of FIG. 9.
  • a protection element is formed in the third circuit unit CR3.
  • the step portion 139 of the first chip 60 is not limited to being provided around the entire circumference of the substrate 130 in a plan view.
  • the step portion 139 may be provided partially on the first to fourth substrate sides 133 to 136 of the substrate 130.
  • the step portion 239 of the second chip 70 is not limited to being provided around the entire circumference of the substrate 230 in a plan view.
  • the step portion 239 may be provided partially on the first to fourth substrate sides 233 to 236 of the substrate 230.
  • the step portion 339 of the third chip 80 is not limited to being provided around the entire circumference of the substrate 330 in a plan view.
  • the step portion 339 may be provided partially on the first to fourth substrate sides 333 to 336 of the substrate 330.
  • one or two of the step portion 139 of the first chip 60, the step portion 239 of the second chip 70, and the step portion 339 of the third chip 80 may be omitted.
  • a step portion is provided in at least one of the substrate 130 of the first chip 60, the substrate 230 of the second chip 70, and the substrate 330 of the third chip 80.
  • the first chip 60 is configured to transmit a signal to the second chip 70 and the third chip 80, but this is not limited to the above.
  • the second chip 70 may transmit a signal to the first chip 60.
  • the first chip 60 may transmit a signal to the second chip 70, and the second chip 70 may transmit a signal to the first chip 60.
  • the third chip 80 may transmit a signal to the first chip 60.
  • the first chip 60 may transmit a signal to the third chip 80, and the third chip 80 may transmit a signal to the first chip 60.
  • the second chip 70 may be configured to receive a signal from the first chip 60 and/or transmit a signal to the first chip 60.
  • the third chip 80 may be configured to receive a signal from the first chip 60 and/or transmit a signal to the first chip 60.
  • the arrangement of the inter-chip wires WA in a plan view can be changed as desired.
  • the three inter-chip wires WA may be formed such that the spacing between adjacent inter-chip wires WA increases, for example, from the first chip 60 toward the second chip 70 in a plan view.
  • the three inter-chip wires WA may be formed such that the spacing between adjacent inter-chip wires WA increases, for example, from the first chip 60 toward the third chip 80 in a plan view.
  • the material constituting the inter-chip wire WA is not limited to gold and can be changed as desired.
  • the material constituting the inter-chip wire WA is not limited to gold and can be changed as desired.
  • the material constituting the inter-chip wire WA is not limited to gold and can be changed as desired.
  • the material constituting the inter-chip wire WA is not limited to gold and can be changed as desired.
  • the material constituting the inter-chip wires WA is not limited to gold and can be changed arbitrarily.
  • the first terminal wire WB is not limited to copper or aluminum and can be changed as desired.
  • the palladium coating on the surface of the copper wire may be omitted.
  • the first die pad wire WC, the second terminal wire WD, the second die pad wire WE, the third terminal wire WF, and the third die pad wire WG can also be changed in the same manner.
  • the configuration of the second bond portion of each of the first die pad wire WC, the second die pad wire WE, and the third die pad wire WG can be changed as desired.
  • a security bond WC1 may be formed on each of the second bond portions of the multiple first die pad wires WC.
  • a security bond WE1 may be formed on each of the second bond portions of the multiple second die pad wires WE.
  • a security bond WG1 may be formed on each of the second bond portions of the multiple third die pad wires WG. Note that the configuration of each of the security bonds WC1, WE1, and WG1 is the same as the configuration of the security bond WB1 of the first terminal wire WB (see FIG. 22), for example.
  • the number of wires WC for the first die pad can be changed arbitrarily.
  • the number of wires WE for the second die pad can be changed arbitrarily.
  • the number of wires WG for the third die pad can be changed arbitrarily.
  • the configuration of the second bond portion of each first terminal wire WB, each second terminal wire WD, and each third terminal wire WF can be changed as desired.
  • a security bond may be formed in at least one second bond portion of each first terminal wire WB, each second terminal wire WD, and each third terminal wire WF.
  • the configuration of the security bond is, for example, the same as the configuration of the security bond WB1 of the first terminal wire WB (see FIG. 22).
  • the first specific wire with the security bond WB1 formed thereon and the second specific wire with no security bond WB1 formed thereon among the multiple first terminal wires WB can be changed as desired.
  • the security bond WB1 may be formed on the second bond portion of the first terminal wire WB joined to the first internal terminal portions 12B, 13B, 15B, 17B, and the security bond WB1 may not be formed on the second bond portion of the first terminal wire WB joined to the first internal terminal portions 14B, 16B.
  • the first terminal wire WB joined to the first internal terminal portions 12B, 13B, 15B, 17B may be the first specific wire
  • the first terminal wire WB joined to the first internal terminal portions 14B, 16B may be the second specific wire.
  • the multiple first terminal wires WB may include the first specific wire with the security bond WB1 formed thereon and the second specific wire with no security bond WB1 formed thereon.
  • the multiple second terminal wires WD may include a third specific wire having a security bond formed at the second bond portion, and a fourth specific wire having no security bond formed at the second bond portion.
  • a security bond is formed at the second bond portion of the second terminal wire WD joined to the second internal terminal portion 42B, and no security bond is formed at the second bond portion of the second terminal wire WD joined to the second internal terminal portion 43B.
  • the multiple third terminal wires WF may include a fifth specific wire having a security bond formed at the second bond portion, and a sixth specific wire having no security bond formed at the second bond portion.
  • a security bond is formed at the second bond portion of the third terminal wire WF joined to the third internal terminal portion 45B, and no security bond is formed at the second bond portion of the third terminal wire WF joined to the third internal terminal portion 46B.
  • a security bond may be formed on the second bond portion of each of the first terminal wires WB, second terminal wires WD, third terminal wires WF, first die pad wires WC, second die pad wires WE, and third die pad wires WG.
  • the surface roughness Rz of each of the sealing front surface 91, the sealing rear surface 92, and the first to fourth sealing side surfaces 93 to 96 of the sealing resin 90 may be less than 8 ⁇ m.
  • the concentration of sulfur added to the sealing resin 90 can be changed as desired.
  • the concentration of sulfur added to the sealing resin 90 may be greater than 300 ⁇ g/g.
  • the signal transmission device 10 of each embodiment can be applied to an insulated gate driver that performs a switching operation of a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) that controls the drive of a motor.
  • a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor) that controls the drive of a motor.
  • IGBT Insulated Gate Bipolar Transistor
  • Such an insulated gate driver can be applied to an inverter device of an electric vehicle or a hybrid vehicle.
  • the power supply voltage supplied to the first chip 60 of the signal transmission device 10 is 5V or 3.3V based on the ground potential.
  • a voltage of, for example, 600V or more is applied transiently to the second chip 70 compared to the ground potential of the first chip 60.
  • a half-bridge circuit in which a low-side switching element and a high-side switching element are connected in a totem pole shape is generally used as a motor driver circuit in an inverter device of a hybrid vehicle or
  • on as used in this disclosure includes the meanings of “on” and “above” unless the context clearly indicates otherwise.
  • the expression “A is formed on B” is intended to mean that, although in each of the above embodiments, A may be in contact with B and directly disposed on B, as a modified example, A may be disposed above B without contacting B.
  • the term “on” does not exclude a structure in which another member is formed between A and B.
  • the statement "at least one of A and B" in this specification should be understood to mean “only A, or only B, or both A and B.”
  • the Z direction used in this disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure are not limited to the "up” and “down” of the Z direction described in this specification being “up” and “down” of the vertical direction.
  • the X direction may be a vertical direction
  • the Y direction may be a vertical direction.
  • Appendix A2 The signal transmission device according to Appendix A1, wherein the first terminal wire (WB) is a copper wire having a surface coated with palladium.
  • Appendix A3 Further comprising a plurality of second terminal wires (WD) that individually connect the second chip (70) and the plurality of second terminals (41 to 43);
  • the first die pad further includes a wire (WC) for a first die pad that connects the first chip (60) and the first die pad (30);
  • the signal transmission device according to any one of Appendixes A1 to A3, wherein the first die pad wire (WC) is made of a material containing copper or aluminum.
  • Appendix A5 Further comprising a second die pad wire (WE) connecting the second chip (70) and the second die pad (50A),
  • the signal transmission device according to any one of Appendixes A1 to A4, wherein the second die pad wire (WE) is made of a material containing copper or aluminum.
  • the first die pad wire (WC) is a bonding wire
  • the signal transmission device according to Appendix A4 wherein a security bond (WC1) is formed at a joint portion of the first die pad wire (WC) with the first die pad (30).
  • the second die pad wire (WE) is a bonding wire, The signal transmission device according to Appendix A5, wherein a security bond (WE1) is formed at a joint portion of the second die pad wire (WE) with the second die pad (50A).
  • the first terminals (12 to 17) include first internal terminal portions (12B to 17B) that are disposed apart from the first die pad (30) and to which the first terminal wires (WB) are connected,
  • the first internal terminal portion (12B to 17B) includes a side surface that intersects with the first terminal wire (WB) connected to the first internal terminal portion (12B to 17B) in a plan view,
  • the signal transmission device according to any one of Appendix A1 to A7, wherein the side surface faces the first die pad (30) in a plan view.
  • Appendix A9 The signal transmission device according to any one of Appendices A1 to A8, wherein a shortest distance between the plurality of second terminals (41 to 43) and the plurality of third terminals (44 to 46) is greater than a distance between adjacent second terminals among the plurality of second terminals (41 to 43) in the second direction (Y direction).
  • the first terminals (12 to 17) include first internal terminal portions (12B to 17B) to which the first terminal wires (WB) are connected, Each of the plurality of first internal terminal portions (12B to 17B) is disposed apart from the first die pad (30);
  • the plurality of first terminal wires (WB) are a first specific wire having no security bond formed at a joint portion with the first internal terminal portion (12B, 17B);
  • the signal transmission device according to any one of Appendix A1 to A7.
  • the first chip (60) is An element insulating layer (150); A first resin layer (191) provided on the element insulating layer; A second resin layer (192) provided on the first resin layer,
  • the isolation transformers (111, 112) are a front side coil (111A to 114A) disposed on the first resin layer (191) and covered with the second resin layer (192);
  • the signal transmission device according to any one of appendices A1 to A10, further comprising a back side coil (111B to 114B) disposed opposite the front side coil (111A to 114A) in the thickness direction (Z direction) of the element insulating layer (150) and embedded in the element insulating layer (150).
  • the first chip (60) is An element insulating layer (150); a passivation film (161) formed on the element insulating layer (150) so as to cover the element insulating layer (150); A low dielectric layer (193) formed on the surface of the passivation film (161) and having a relative dielectric constant lower than that of the passivation film (161),
  • the signal transmission device according to any one of Appendices A1 to A10, wherein the sealing resin (90) covers the low dielectric layer (193).
  • the isolation transformers (111, 112) are a front surface side coil (111A to 114A) arranged near the chip front surface (61) of the first chip (60); A back side coil (111B to 114B) arranged opposite the front side coil (111A to 114A),
  • the front side coils (111A to 114A) are A coil surface (171); A coil back surface (172) opposite to the coil front surface (171); A coil side surface (173) that connects the coil front surface (171) and the coil back surface (172),
  • the signal transmission device according to any one of appendices A1 to A12, wherein a curved surface is formed between the coil surface (171) and the coil side surface (173).
  • the first chip (60) is A flat substrate (130) mounted on the first die pad (30); An element insulating layer (150) formed on the substrate (130) and having at least a part of the isolation transformer (111, 112) provided thereon;
  • the substrate (130) is a back surface (132) of the substrate facing the first die pad (30); a substrate surface (131) opposite to the substrate back surface (132); A substrate side surface (133 to 136) connecting the substrate back surface (132) and the substrate front surface (131); A first portion (137) including the rear surface (132) of the substrate; a second portion (138) disposed on the first portion (137) and including the substrate surface (131); A step portion (139) formed so that the second portion (138) is positioned inside the substrate (130) relative to the first portion (137).
  • the signal transmission device according to any one of Appendixes A1 to A13.
  • the first die pad (30) is a first tip surface (31) facing the second die pad (50A) in the first direction (X direction) in a plan view; a first base end surface (32) opposite the first tip end surface (31) in a plan view; A first side surface (33) and a second side surface (34) constituting both side surfaces in the second direction (Y direction); a first tip side curved surface (35A) formed between the first tip surface (31) and the first side surface (33); a second tip side curved surface (35B) formed between the first tip surface (31) and the second side surface (34); a proximal curved surface (36) formed between the first proximal surface (32) and the first side surface (33);
  • the signal transmission device according to any one of Appendix A1 to A14, wherein, in a plan view, the arc lengths of both the first distal curved surface (35A) and the second distal curved surface (35B) are longer than the arc length of the base curved surface (36).
  • the first terminals (12 to 17) include first internal terminal portions (12B to 17B) that are disposed apart from the first die pad (30) and to which the first terminal wires (WB) are connected, Each of the plurality of first internal terminal portions (12B to 17B) is an inner terminal surface (21) to which the first terminal wire (WB) is bonded; An internal terminal back surface (22) facing the opposite side to the internal terminal front surface (21); and an internal terminal side surface (23) connecting the internal terminal surface (21) and the internal terminal back surface (22),
  • the internal terminal side surface (23) includes a tip surface (24) facing the first die pad (30), A plating layer (25) is formed on the inner terminal surface (21),
  • the signal transmission device according to any one of Appendices A1 to A15, wherein a plating layer (25) is not formed on an end portion of the inner terminal surface (21) on the tip surface (24) side, and the end portion is in contact with the sealing resin (90).
  • Appendix A17 The signal transmission device according to any one of Appendices A1 to A16, wherein the outer surfaces (91 to 96) of the sealing resin (90) are formed so as to have a surface roughness Rz of 8 ⁇ m or more.
  • Appendix A19 Further comprising a plurality of third terminal wires (WF) respectively connecting the third chip (80) and the plurality of third terminals (44 to 46);
  • Appendix A20 The signal transmission device according to Appendix A19, wherein the third terminal wire (WF) is a copper wire having a surface coated with palladium.
  • Appendix A21 Further comprising a third die pad wire (WG) connecting the third chip (80) and the third die pad (50B), The signal transmission device according to any one of Appendixes A1 to A17, wherein the third die pad wire (WG) is made of a material containing copper or aluminum.
  • the third die pad wire (WG) is a bonding wire, The signal transmission device according to Appendix A21, wherein a security bond (WG1) is formed at a joint portion of the third die pad wire (WG) with the third die pad.
  • the second chip (70) and the second terminals (42, 43) are individually connected to each other by a plurality of second terminal wires (WD),
  • the plurality of second terminals (42, 43) include second internal terminal portions (42B, 43B) disposed apart from the second die pad (50A), the second internal terminal portion (42B, 43B) includes a side surface that intersects with the second terminal wire (WD) connected to the second internal terminal portion (42B, 43B) in a plan view,
  • the signal transmission device according to claim 1 or 2, wherein the side surface faces the second die pad (50A) in a plan view.
  • the third chip (80) and the third terminals (45, 46) are connected to each other via a plurality of third terminal wires (WF),
  • the plurality of third terminals (45, 46) include third internal terminal portions (45B, 46B) disposed apart from the third die pad (50B), the third internal terminal portion (45, 46) includes a side surface that intersects with the third terminal wire (WF) connected to the third internal terminal portion (45, 46) in a plan view,
  • the signal transmission device according to claim 1 or 2, wherein the side surface faces the third die pad (50B) in a plan view.
  • the second die pad (50A) is a second tip surface (51A) facing the first die pad (30) in the first direction (X direction) in a plan view; a second base end surface (52A) opposite to the second tip end surface (51A) in a plan view; a third side surface (53A) and a fourth side surface (54A) constituting both side surfaces in the second direction (Y direction); a first tip side curved surface (55AA) formed between the second tip surface (51A) and the third side surface (53A); a base end curved surface (56A) formed between the second base end surface (52A) and the fourth side surface (54A);
  • the signal transmission device according to any one of Appendixes A1 to A24, wherein, in a plan view, an arc length of the first distal curved surface (55AA) is longer than an arc length of the base curved surface (56A).
  • the third die pad (50B) is a third tip surface (51B) facing the first die pad (30) in the first direction (X direction) in a plan view; a third base end surface (52B) opposite to the third tip end surface (51B) in a plan view; A fifth side surface (53B) and a sixth side surface (54B) constituting both side surfaces in the second direction (Y direction); a second tip side curved surface (55BB) formed between the third tip surface (51B) and the sixth side surface (54B); a base end curved surface (56BB) formed between the third base end surface (52B) and the sixth side surface (54B);
  • the signal transmission device according to any one of appendices A1 to A25, wherein, in a plan view, the arc length of the second distal curved surface (55BB) is longer than the arc length of the proximal curved surface (56BB).
  • the second terminal wire (WD) is further provided to individually connect the plurality of second terminals (42, 43) and the second chip (70),
  • the second terminals (42, 43) include second internal terminal portions (42B, 43B) provided in the sealing resin (90),
  • the second internal terminal portion (42B, 43B) is an inner terminal surface (21) to which the second terminal wire (WD) is bonded;
  • An internal terminal back surface (22) facing the opposite side to the internal terminal front surface (21); and an internal terminal side surface (23) connecting the internal terminal surface (21) and the internal terminal back surface (22),
  • the inner terminal side surface (23) includes a tip surface (24) facing the second die pad (50A) in the first direction (X direction),
  • a plating layer (25) is formed on the inner terminal surface (21),
  • the signal transmission device according to any one of Appendices A1 to A26, wherein a plating layer (25) is not formed on an end portion of the inner terminal surface (21) on the tip surface (24) side, and the end portion is in contact with
  • the third terminal wire (WF) is further provided to individually connect the plurality of third terminals (45, 46) and the third chip (80),
  • the third terminal (45, 46) includes a third internal terminal portion (45B, 46B) provided in the sealing resin (90),
  • the third internal terminal portion (45B, 46B) is an inner terminal surface (21) to which the third terminal wire (WF) is bonded;
  • An internal terminal back surface (22) facing the opposite side to the internal terminal front surface (21); and an internal terminal side surface (23) connecting the internal terminal surface (21) and the internal terminal back surface (22),
  • the inner terminal side surface (23) includes a tip surface (24) facing the third die pad (50B) in the first direction (X direction),
  • a plating layer (25) is formed on the inner terminal surface (21),
  • the signal transmission device according to any one of Appendices A1 to A27, wherein a plating layer (25) is not formed on an end portion of the inner terminal surface (21) on the tip surface (24) side, and the end portion is
  • the second chip (70) is A flat substrate (230) mounted on the second die pad (50A),
  • the substrate (230) is A substrate back surface (232) facing the second die pad (50A); a substrate surface (231) opposite to the substrate back surface (232); A substrate side surface (233 to 236) connecting the substrate back surface (232) and the substrate front surface (231);
  • the signal transmission device according to any one of Appendixes A1 to A28.
  • the third chip (80) is A flat substrate (330) mounted on the third die pad (50B),
  • the substrate (330) is a back surface (332) of the substrate facing the third die pad (50B); a substrate surface (331) opposite to the substrate back surface (332); A substrate side surface (333 to 336) connecting the substrate back surface (332) and the substrate front surface (331);
  • the signal transmission device according to any one of Appendixes A1 to A29.
  • Electric field concentration is likely to occur in the corners defined by the front and side surfaces of the first coil, which may result in a decrease in the dielectric strength of the first chip.
  • Reference Signs List 10 signal transmission device 11-17: first terminal 11A-17A: first external electrode 11C-17C: first via 12B-17B: first internal terminal portion 12BA: via connection portion 12BB: wire connection portion 14BA: first terminal portion 14BB: second terminal portion 17BA: inclined portion 17BB: extension portion 17BC: wire connection portion 17BD: recessed portion 20: internal terminal body 21: internal terminal surface 22: internal terminal back surface 23: internal terminal side surface 24: tip surface 25: plating layer 25A: end surface 30: first die pad 31: first tip surface 32: first base end surface 33: first side surface 34: second side surface 35A: first tip curved surface 35B: second tip curved surface 36: base end curved surface [0033] 37A...first recessed portion 37A1...first surface 37A2...second surface 37A3...curved concave surface 37B...second recessed portion 37C...third recessed portion 37C1...curved concave surface 37C2...bottom surface 37C3...inclined surface 38A...inclined surface 38B...projection portion 38B1...

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PCT/JP2023/034561 2022-09-29 2023-09-22 信号伝達装置 Ceased WO2024070966A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017112327A (ja) * 2015-12-18 2017-06-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2022055599A (ja) * 2020-09-29 2022-04-08 ローム株式会社 半導体装置
WO2022085394A1 (ja) * 2020-10-20 2022-04-28 ローム株式会社 半導体装置
WO2022130906A1 (ja) * 2020-12-18 2022-06-23 ローム株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017112327A (ja) * 2015-12-18 2017-06-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2022055599A (ja) * 2020-09-29 2022-04-08 ローム株式会社 半導体装置
WO2022085394A1 (ja) * 2020-10-20 2022-04-28 ローム株式会社 半導体装置
WO2022130906A1 (ja) * 2020-12-18 2022-06-23 ローム株式会社 半導体装置

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