WO2024069866A1 - Élément de liaison et dispositif à semi-conducteur - Google Patents

Élément de liaison et dispositif à semi-conducteur Download PDF

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Publication number
WO2024069866A1
WO2024069866A1 PCT/JP2022/036485 JP2022036485W WO2024069866A1 WO 2024069866 A1 WO2024069866 A1 WO 2024069866A1 JP 2022036485 W JP2022036485 W JP 2022036485W WO 2024069866 A1 WO2024069866 A1 WO 2024069866A1
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WIPO (PCT)
Prior art keywords
melting point
less
thermal expansion
metal particles
joining
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PCT/JP2022/036485
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English (en)
Japanese (ja)
Inventor
浩次 山▲崎▼
紀和 境
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2023508568A priority Critical patent/JP7267522B1/ja
Priority to PCT/JP2022/036485 priority patent/WO2024069866A1/fr
Publication of WO2024069866A1 publication Critical patent/WO2024069866A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs

Definitions

  • This disclosure relates to a joining member and a semiconductor device.
  • semiconductor elements with substrates made of silicon (Si), gallium arsenide (GaAs), etc. are widely used.
  • the operating temperature of such semiconductor elements is 100°C to 125°C.
  • the solder material used to join these semiconductor elements to circuit boards is required to have a high melting point to accommodate the multi-stage soldering that occurs during manufacturing, crack resistance to repeated thermal stress associated with startup and shutdown, and resistance to contamination of the device.
  • next-generation devices with substrates made of silicon carbide (SiC) or gallium nitride (GaN).
  • SiC silicon carbide
  • GaN gallium nitride
  • the temperature at the junction between the semiconductor element and the circuit board will reach 175°C. Furthermore, the temperature at the junction between the circuit board and the heat sink will also rise to a temperature close to this, depending on the operating conditions and heat dissipation performance. For this reason, high reliability is required for the junction between the circuit board and the heat sink, as well as the junction between the semiconductor element and the circuit board.
  • a conventional method for manufacturing a highly heat-resistant bonded body is to add a large amount of metal particles such as Ag or Cu to Sn, and form a bonding layer from an Ag-Sn alloy phase (e.g., Ag 3 Sn: melting point 480°C), a Cu-Sn alloy (e.g., Cu 6 Sn 5 : melting point 415°C, Cu 3 Sn: melting point 676°C), etc. by metal diffusion caused by heating (300°C or less) during bonding.
  • an Ag-Sn alloy phase e.g., Ag 3 Sn: melting point 480°C
  • a Cu-Sn alloy e.g., Cu 6 Sn 5 : melting point 415°C, Cu 3 Sn: melting point 676°C
  • Patent Document 1 JP Patent Publication 2002-314241 A discloses a connection method or electronic device using solder, in which the Sn in the solder ball melts and forms an intermetallic compound at the interface with the Cu in the metal ball, connecting the Cu metal balls.
  • the molten Sn also forms an intermetallic compound with the electrodes of the semiconductor chip and the electrodes of the intermediate substrate, connecting the Cu metal balls to these electrodes.
  • connection portion has sufficient strength to withstand the process of subsequent solder connection, as the Sn in the solder ball becomes a Cu-Sn intermetallic compound (Cu 6 Sn 5 , melting point: approximately 630° C.), causing the contact portion and its vicinity to have a high melting point, and even if some of the Sn remains, as long as other portions do not melt.
  • Cu-Sn intermetallic compound Cu 6 Sn 5 , melting point: approximately 630° C.
  • the metal balls are not limited to Cu, and may be Ag, Au, Al, Ni, Cu alloys, Cu-Sn compounds, Ag-Sn compounds, Au-Sn compounds, Al-Ag compounds, Zn-Al compounds, etc., and Patent Document 1 also states that Au has good wettability and therefore has the effect of reducing voids in the connection.
  • Patent Document 2 (WO 2012/108395) describes that by heating and melting solder containing Sn-based metal and Cu-based metal at the connection, an intermetallic compound with a melting point of 310°C or higher is formed. It also discloses that the ratio of Sn-based metal components contained in the connection is 30% by volume or less.
  • adding a large amount of metal particles such as Cu particles or Ag particles reduces the fluidity of Sn, leaving the areas sealed between the metal particles unjoined, creating voids and making the joints susceptible to cracks when subjected to thermal shock.
  • Ag-Sn alloys such as Ag 3 Sn or Cu-Sn alloys such as Cu 6 Sn 5 have a solid solution region of about 5 mass % Ag or Cu and Sn in terms of the metal phase diagram.
  • the interface between Ag 3 Sn and Cu 6 Sn 5 becomes a void if there is no Sn phase with a low melting point, and becomes the starting point of cracks.
  • the inventors of the present invention believe that in semiconductor devices that operate at high temperatures, it is important to ensure not only the mechanical properties of the material or the heat cycle resistance of the individual parts to which it is applied, but also the reliability of the device in the power cycles that accompany actual operation (repeated heating and cooling caused by repeatedly turning the application of power to the semiconductor device on and off).
  • the objective of this disclosure is to provide a joining member with high joining reliability against power cycles in semiconductor devices that operate at high temperatures.
  • the joining member includes metal particles containing Ni as a main component, a low-melting point phase containing Sn as a main component and having a melting point of less than 300°C, and an intermetallic compound having a melting point of 300°C or higher that is formed by interdiffusion between Sn and the metal particles.
  • the ratio of the amount of the low melting point phase to the total amount of the joining members is 2 vol % or more and less than 20 vol %.
  • the thermal expansion coefficients of the first object and the second object are equal to or greater than 3 ⁇ 10 ⁇ 6 /K and less than 13 ⁇ 10 ⁇ 6 /K, and the difference in thermal expansion coefficient between the first object and the second object is less than 5 ⁇ 10 ⁇ 6 /K.
  • the thermal expansion coefficient of the joining member is 16 ⁇ 10 ⁇ 6 /K or more and less than 20 ⁇ 10 ⁇ 6 /K.
  • a low melting point phase (e.g., a Sn-only phase) is left remaining, ensuring wettability to the joined members (objects to be joined), and by optimizing the amount of this remaining phase, vertical cracks during power cycles can be suppressed.
  • the joining member disclosed herein is applied to joining multiple objects whose thermal expansion coefficient difference is within a specific range, and therefore can suppress lateral cracks caused by shear stress resulting from the difference in thermal expansion coefficient between multiple objects to be joined.
  • the tensile stress and compressive stress (tensile-compressive stress) caused by the difference in thermal expansion coefficient between the objects to be joined and the joining material is suppressed, resulting in excellent joining reliability even when operating at high temperatures (e.g., 175°C).
  • FIG. 1 is a flowchart showing a manufacturing procedure of a semiconductor device (bonding member).
  • FIG. 2 is a schematic cross-sectional view showing a first step in FIG. 1 .
  • FIG. 2 is a schematic cross-sectional view showing a second step in FIG. 1 .
  • FIG. 2 is a schematic cross-sectional view showing a third step in FIG. 1 .
  • FIG. 2 is a schematic cross-sectional view showing a fourth step in FIG. 1 .
  • FIG. 2 is a schematic cross-sectional view showing a fifth step in FIG. 1 .
  • the joining member 1 of this embodiment includes metal particles 11, a low melting point phase 12, and an intermetallic compound 13.
  • Metal particles 11 contain Ni as a main component.
  • the "main component” refers to the component contained in metal particles 11 that is present in the largest amount.
  • the content of Sn in metal particles 11 is preferably 60 mass% or more, more preferably 70 mass% or more, and even more preferably 80 mass% or more.
  • the metal particles 11 may further contain at least one component selected from the group consisting of Fe, Cr, C, Cu, and Si.
  • the low melting point phase 12 contains Sn as a main component and has a melting point of less than 300°C.
  • the "main component” refers to the component contained in the low melting point phase 12 in the greatest amount.
  • the content of Sn in the low melting point phase 12 is preferably 60 mass% or more, more preferably 70 mass% or more, and even more preferably 80 mass% or more.
  • the low melting point phase may further contain, for example, Ag and Cu (in addition to Sn).
  • the Ag content may be 3 mass% or more and less than 4 mass%
  • the Cu content may be 0.5 mass% or more and less than 1.0 mass%. If the Ag and Cu contents are within this range, it is expected that the effects of the present disclosure can be obtained more reliably.
  • the intermetallic compound 13 is a compound (phase) formed by interdiffusion between Sn and metal particles 11, and has a melting point of 300°C or higher.
  • the ratio of the amount of the low melting point phase 12 to the total amount of the joining member 1 is 2 volume % or more and less than 20 volume %.
  • the thermal expansion coefficients of the first object 2 and the second object 3 are greater than or equal to 3 ⁇ 10 ⁇ 6 /K and less than 13 ⁇ 10 ⁇ 6 /K, and the difference in thermal expansion coefficient between the first object 2 and the second object 3 is less than 5 ⁇ 10 ⁇ 6 /K.
  • the thermal expansion coefficient of the joining member is not less than 16 ⁇ 10 ⁇ 6 /K and less than 20 ⁇ 10 ⁇ 6 /K.
  • the inventors conducted reliability tests on semiconductor devices using power cycles and found that suppressing cracks (vertical cracks) that occur in the thickness direction of the layers of the joining material during power cycles is important for improving joining reliability.
  • the reliability of the joint depends not only on the material that makes up the joining member, such as solder, but also on the composition of the joined members (objects to be joined). For this reason, in order to improve the reliability of power modules, it is necessary to consider not only the composition of the materials of the joining members, but also the composition of the joined members.
  • the inventors have discovered the bonding material disclosed herein that has high bonding reliability against power cycles in semiconductor devices that operate at high temperatures.
  • the semiconductor device according to the present embodiment includes a heat sink 2 and a circuit board 3 (a board having a semiconductor element and a wiring circuit).
  • the heat sink 2 and the circuit board 3 are joined via the highly reliable joining member 1 described in the first embodiment. This provides a highly reliable semiconductor device.
  • the semiconductor device of this embodiment can be manufactured by a manufacturing method that includes a step of joining a heat sink and a circuit board (see Figures 1 to 6).
  • a solder sheet 10 is cut to a predetermined size (see Figure 2), which is made of a low-melting-point phase 12 containing Sn as the main component and having a melting point of 300°C or less, and in which metal particles 11 made of Ni are dispersed.
  • each element was added and melted to obtain the composition shown below (the values indicate mass percentages. Sn is the remainder of the composition ratio of the other elements), and a bulk body was produced.
  • a rolled solder sheet 10 was produced using a rolling process at 100°C or less so that the thickness was 100 ⁇ m.
  • Ni particles metal particles 11
  • a sheet made of a low melting point phase 12 is layered on top of it to create a mixed sheet.
  • the thickness is 100 ⁇ m, but this is not essential.
  • the cut size is the same as the upper member, 10 mm x 10 mm.
  • the solder sheet 10 may be manufactured not only by rolling, but also by melting the bulk and sequentially pouring the molten solder through thin slits.
  • the combination of elements is more than three elements as described above (for example, when Bi, In, Sb, etc. are added to Sn-Ag-Cu)
  • the composition of the bulk may become non-uniform due to temperature variations in the melting furnace.
  • the solder composition may be adjusted by first manufacturing a bulk of Sn-Ag-Cu, melting it again, and adding a specified amount of the remaining Bi, In, Sb, etc.
  • the solder sheet 10 may be manufactured by first forming solder balls, uniformly scattering the solder balls on a flat plate, and compression molding the solder sheet 10.
  • the solder sheet 10 is placed on the first object 2 (lower member) (see Figure 3).
  • a predetermined amount of rust inhibitor with a decomposition temperature of 100°C or less that does not affect the bonding properties may be applied to the outermost surface of the CuMo alloy plate.
  • an organic agent that thermally decomposes at a high temperature of 100°C or more may be used as a tack material to prevent the solder sheet 10 from shifting from its designated position.
  • the viscosity of the tack material is preferably 200 Pa ⁇ s or more.
  • a resist film may be applied to the areas other than the joint of the first object 2 to prevent the solder sheet 10 from shifting.
  • the solder sheet 10 may be slightly curved during cutting or handling. This is because the solder sheet 10 melts to some extent when heated, so the effect of the initial shape of the solder sheet is small. However, if the solder sheet 10 is curved so much that the second object 3 (upper member) cannot be placed on it in the next process, the solder sheet 10 is straightened so that it is parallel on another flat plate.
  • the second object 3 (upper component) is placed on the solder sheet 10 (see Figure 4).
  • the above-mentioned tack material may be applied between the joined member (upper member) 1 and the solder sheet 10 to fix the mounting position.
  • the surfaces of the members to be joined (first object 2 and second object 3) on the joining side are plated with Cu or Ni, or are coated with a film of Au, Ag, Pt, etc., on the order of several tens of nanometers.
  • the laminate of each component obtained in the above steps was placed on a hot plate 5 in a heating furnace 5 (see FIG. 5). Then, formic acid, a typical organic acid capable of reducing oxide films, was sealed in the heating furnace 5, and the solder sheet 10 was melted by heating at 180°C for 5 minutes and then at 260°C for 3 minutes to form the joining member 1.
  • formic acid a typical organic acid capable of reducing oxide films
  • the low melting point phase 12 and metal particles 11 in the solder sheet 10 form a compound through thermal diffusion.
  • the ratio of compounds (intermetallic compounds) formed between the metal particles 11 and Sn varies depending on the particle size and amount of the metal particles 11 added. For this reason, it is preferable to adjust the particle size and amount of the metal particles 11 added so that the low melting point phase 12 remains.
  • the reason for this is that if most of the joining member 1 is made up of metal particles 11 and intermetallic compounds 13, the Sn in the low melting point phase 12 cannot deform, so there is no problem with the reliability of the joining.
  • the surfaces of the general-purpose members to be joined are rough, and the surface roughness (unevenness) may be on the order of a few ⁇ m.
  • the low-melting point phase 12 needs to wet and spread over the volume of the unevenness on the surface.
  • the surface area of the metal particles 11 in the solder sheet 10 becomes large, and the low-melting point phase 12 reacts preferentially with the metal particles 11, and the low-melting point phase 12 does not wet sufficiently to the surfaces of the members to be joined.
  • the particle size and amount of metal particles 11 added it is preferable to adjust the particle size and amount of metal particles 11 added so that the low melting point phase 12 remains.
  • the particle size (average particle size: D50) of metal particles 11 added to solder sheet 10 is 5 to 20 ⁇ m, and the compounding ratio of metal particles in solder sheet 10 is 8 to 30 mass %.
  • the sample on which the joining member 1 was formed was placed on a cooling plate 6 and cooled (see Figure 6).
  • solder joint is made of a material that melts completely, like regular solder, there is a possibility that the joined parts (upper or lower parts) will warp or swell (causing unevenness) due to thermal contraction. For this reason, it is desirable to cool gradually during the cooling process. For example, it is generally cooled to 100°C within 60 seconds, but in order to reduce warping, it may take approximately 400 seconds to reach 100°C.
  • the main component of the metal particles 11 is Ni, which has a lower thermal expansion coefficient than Sn, the amount of thermal contraction of the solder sheet 10 is small, and since the thermal expansion coefficients of the members to be joined (first object 2 and second object 3) are each 3 ⁇ 10 ⁇ 6 /K or more and less than 13 ⁇ 10 ⁇ 6 /K, and the difference in the thermal expansion coefficient between the first object 2 and the second object 3 is less than 5 ⁇ 10 ⁇ 6 /K, warping is small and it is possible to reduce residual stress generated in the joining member 1. For this reason, there is no particular need to extend the time of the cooling process.
  • a circuit board on which a semiconductor element and a circuit pattern are formed can be joined to a heat sink via the above-mentioned joining member 1.
  • the joining member 1 (solder sheet 10) can be applied to the die bond portion, base attachment portion, etc. of a power module, regardless of the size of the joining area.
  • the oxygen concentration in the solder sheet 10 is also important.
  • the metal particles 11 contain Ni, which is easily oxidized, and the surface area of the metal particles 11 is large. For this reason, even if only a small amount of surface oxidation of the metal particles 11 occurs, if the oxidation progresses from the interface of the metal particles 11, the overall amount of oxidation will become large, significantly affecting wettability. Therefore, if the oxygen concentration in the solder sheet 10 is high, a good bonding member will not be formed unless it is stored in a vacuum desiccator or the like. Therefore, in order to form a good bonding member, it is preferable that the oxygen concentration in the solder sheet 10 is greater than 0 and less than 500 ppm.
  • Example 1 Following the procedure of the above embodiment described with reference to Fig. 1, bonding samples (samples 1 to 7) were produced by changing the thermal expansion coefficients of the first object 2 and the second object 3 as shown in Table 1.
  • the particle size (average particle size: D50) of the metal particles 11 added to the solder sheet 10 was 10 ⁇ m.
  • a CuMo alloy plate (thickness: 1 mm, size: 20 mm x 20 mm) was used as the first object 2.
  • the outermost surface of the CuMo alloy plate was solid copper, and no plating was applied to this outermost surface.
  • the compounding ratio of Cu and Mo was changed to change the thermal expansion coefficient as shown in Table 1.
  • an Invar alloy was used as the first object with a thermal expansion coefficient of 2.
  • the thermal expansion coefficient can be adjusted as desired by changing the thickness of the three layers that make up the board.
  • the second object 3 has a thickness of 100 ⁇ m and a size of 10 mm ⁇ 10 mm.
  • the thermal expansion coefficient of this second object 3 was changed as shown in Table 1 by changing the compounding ratio of the CuMo alloy and the Invar alloy, as in the first object 2.
  • the surfaces of the joining sides of the first object 2 and the second object 3 were plated with Ni to a thickness of 3 ⁇ m.
  • a high-speed thermal shock test simulating a power cycle test was conducted on the bonded samples of the combinations shown in Table 1 obtained as described above. Specifically, a thermal shock test was conducted in which one cycle consisting of 10 seconds of power ON (attained temperature: 175°C) and 10 seconds of power OFF (attained temperature: 50°C) was repeated 100,000 times.
  • this result is also related to the thermal expansion coefficient of the joint (joining member and joined member).
  • a lateral tensile and compressive stress is applied to the joining member restrained by the joined members (first object 2 and second object 3), causing vertical cracks.
  • the thermal expansion coefficient of the joining member 1 is small, the generated stress can also be reduced.
  • metal particles 11 containing Ni as a main component are used. It is difficult to predict from publicly known literature the extent to which the thermal expansion coefficient of the joining member 1 using the metal particles 11 will affect the joining reliability.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un élément de liaison (1) qui lie un premier objet (2) et un second objet (3). L'élément de liaison (1) comprend : des particules métalliques (11) contenant du Ni en tant que composant principal ; une phase à bas point de fusion (12) comprenant Sn en tant que composant principal et ayant un point de fusion inférieur à 300 °C ; et un composé intermétallique (13) qui est le résultat de l'interdiffusion entre les Sn et les particules métalliques (11) et a un point de fusion de 300 °C ou plus. Le pourcentage de la quantité de la phase à bas point de fusion (12) par rapport à la quantité totale de l'élément de liaison (1) est supérieur ou égal à 2 % en volume et inférieur à 20 % en volume. Les coefficients de dilatation thermique du premier objet (2) et du second objet (3) sont supérieurs ou égaux à 3 x 10 -6 /K et inférieurs à 13 x 10 -6 /K, et la différence entre les coefficients de dilatation thermique du premier objet (2) et du second objet (3) est inférieure à 5 x 10 -6 /K. Le coefficient de dilatation thermique de l'élément de liaison (1) est supérieur ou égal à 16 x 10 -6 /K et inférieur à 20 x 10 -6 /K.
PCT/JP2022/036485 2022-09-29 2022-09-29 Élément de liaison et dispositif à semi-conducteur WO2024069866A1 (fr)

Priority Applications (2)

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JP2023508568A JP7267522B1 (ja) 2022-09-29 2022-09-29 接合部材および半導体装置
PCT/JP2022/036485 WO2024069866A1 (fr) 2022-09-29 2022-09-29 Élément de liaison et dispositif à semi-conducteur

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PCT/JP2022/036485 WO2024069866A1 (fr) 2022-09-29 2022-09-29 Élément de liaison et dispositif à semi-conducteur

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506733A (ja) * 2006-10-17 2010-03-04 フライズ・メタルズ・インコーポレイテッド 電気装置の配線に使用するための材料および関連する方法
JP2014147966A (ja) * 2013-02-04 2014-08-21 Hitachi Ltd 接合材料、接合方法、接合構造、および半導体装置
JP2017039167A (ja) * 2009-04-02 2017-02-23 オーメット サーキッツ インク 混合された合金フィラーを含む伝導性組成物
WO2017119205A1 (fr) * 2016-01-07 2017-07-13 株式会社村田製作所 Composition métallique, élément de composé intermétallique et corps lié
JP2017172029A (ja) * 2016-03-25 2017-09-28 新日鐵住金株式会社 Ｎｉナノ粒子を用いた接合材料及び接合構造体
WO2018030262A1 (fr) * 2016-08-09 2018-02-15 株式会社村田製作所 Procédé de fabrication de composant de module
JP2021037547A (ja) * 2019-05-27 2021-03-11 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、車載電子回路、ｅｃｕ電子回路、車載電子回路装置、およびｅｃｕ電子回路装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506733A (ja) * 2006-10-17 2010-03-04 フライズ・メタルズ・インコーポレイテッド 電気装置の配線に使用するための材料および関連する方法
JP2017039167A (ja) * 2009-04-02 2017-02-23 オーメット サーキッツ インク 混合された合金フィラーを含む伝導性組成物
JP2014147966A (ja) * 2013-02-04 2014-08-21 Hitachi Ltd 接合材料、接合方法、接合構造、および半導体装置
WO2017119205A1 (fr) * 2016-01-07 2017-07-13 株式会社村田製作所 Composition métallique, élément de composé intermétallique et corps lié
JP2017172029A (ja) * 2016-03-25 2017-09-28 新日鐵住金株式会社 Ｎｉナノ粒子を用いた接合材料及び接合構造体
WO2018030262A1 (fr) * 2016-08-09 2018-02-15 株式会社村田製作所 Procédé de fabrication de composant de module
JP2021037547A (ja) * 2019-05-27 2021-03-11 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、車載電子回路、ｅｃｕ電子回路、車載電子回路装置、およびｅｃｕ電子回路装置

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