WO2024055768A1 - 显示面板、显示面板制备方法及显示装置 - Google Patents

显示面板、显示面板制备方法及显示装置 Download PDF

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Publication number
WO2024055768A1
WO2024055768A1 PCT/CN2023/110703 CN2023110703W WO2024055768A1 WO 2024055768 A1 WO2024055768 A1 WO 2024055768A1 CN 2023110703 W CN2023110703 W CN 2023110703W WO 2024055768 A1 WO2024055768 A1 WO 2024055768A1
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Prior art keywords
layer
cathode
display panel
anode
cathode layer
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PCT/CN2023/110703
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English (en)
French (fr)
Inventor
郝力强
吴磊
高裕弟
刘宏俊
安乐平
李勇
胡光明
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苏州清越光电科技股份有限公司
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Publication of WO2024055768A1 publication Critical patent/WO2024055768A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • the present application relates to the field of display technology, for example, to a display panel, a display panel preparation method and a display device.
  • the cathode film layer prepared by thermal evaporation method has higher density and better effect.
  • high-temperature evaporation sources are prone to abnormalities, resulting in low production efficiency.
  • the electron beam evaporation method although the evaporation efficiency is high and the stability during the evaporation process is good, the density of the film deposited after evaporation is low. If a large current flows through the pixel structure, there will be many particles on the film. This kind of defect easily generates high heat, causing the pixel structure to be burned, which reduces the reliability of the pixel structure and thus affects the display effect of the PMOLED display panel.
  • This application provides a display panel, a display panel preparation method and a display device to improve the reliability of the pixel structure and improve the display effect of the PMOLED display panel while ensuring production efficiency.
  • a display panel including:
  • An anode layer, the anode layer is disposed on the surface of the substrate;
  • An organic light-emitting layer is disposed on the side of the anode layer away from the substrate;
  • a first cathode layer, the first cathode layer is disposed on a side of the organic light-emitting layer away from the anode layer;
  • a non-metal layer, the non-metal layer is disposed on the side of the first cathode layer away from the organic light-emitting layer;
  • a second cathode layer, the second cathode layer is disposed on a side of the non-metal layer away from the first cathode layer.
  • the non-metallic layer is provided with a plurality of penetrating holes
  • the second cathode layer is filled in the plurality of holes on the non-metal layer and is in contact with the first cathode layer.
  • the thickness of the first cathode layer and the second cathode layer is greater than or equal to 5 nm, and the thickness of the non-metal layer is 0.5-1 nm.
  • the non-metal layer includes an aromatic amine compound.
  • the display panel further includes: a pixel definition layer; a plurality of openings are provided on the pixel definition layer, and the plurality of openings are arranged in an array; the plurality of openings expose the anode layer so that the The organic light-emitting layer contacts the anode layer at the plurality of openings.
  • a display panel preparation method which preparation method includes:
  • the anode material is sputtered using a physical vapor deposition method to form an anode film layer, and the anode film layer is patterned to form an anode layer;
  • an organic luminescent material is evaporated using a thermal evaporation method to form an organic luminescent layer;
  • a cathode material is evaporated using a thermal evaporation method or an electron beam evaporation method to form a first cathode layer;
  • an organic non-metallic material is evaporated using a thermal evaporation method to form a non-metallic layer;
  • a cathode material is evaporated using a thermal evaporation method or an electron beam evaporation method to form a second cathode layer.
  • the thermal evaporation method is used to evaporate organic non-metallic materials to form a non-metallic layer, including:
  • the non-metallic layer is formed by evaporation to have a thinner thickness to retain the holes distributed on the non-metallic layer; wherein the thickness of the non-metallic layer is 0.5-1 nm.
  • the method further includes:
  • a pixel definition layer material is coated on the anode layer, and a patterning process is performed on the pixel definition layer material to form a pixel definition layer.
  • a display device including the above-mentioned display panel.
  • Figure 1 is a schematic top structural view of a display panel provided according to an embodiment of the present application.
  • Figure 2 is a schematic cross-sectional structural diagram of a display panel provided according to an embodiment of the present application.
  • Figure 3 is a schematic structural diagram of a non-metallic layer of a display panel provided according to an embodiment of the present application.
  • Figure 4 is a schematic structural diagram of yet another display panel provided according to an embodiment of the present application.
  • Figure 5 is a schematic structural diagram of yet another display panel provided according to an embodiment of the present application.
  • Figure 6 is a schematic flowchart of a display panel preparation method provided according to an embodiment of the present application.
  • Figure 7 is a schematic structural diagram of a display panel corresponding to multiple steps of a display panel preparation method provided according to an embodiment of the present application
  • FIG. 8 is a schematic structural diagram of a display device according to an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a top view of a display panel provided by an embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional structural diagram of a display panel provided by an embodiment of the present application along the A-A' direction.
  • the display panel includes: a substrate 10 , an anode layer 20 , an organic light-emitting layer 30 , a first cathode layer 40 , a non-metal layer 50 and a second cathode layer 60 .
  • the anode layer 20 is disposed on the surface of the substrate 10
  • the organic light-emitting layer 30 is disposed on a side of the anode layer 20 away from the substrate 10
  • the first cathode layer 40 is disposed on a side of the organic light-emitting layer 30 away from the anode layer 20
  • the non-metal layer 50 is disposed on the side of the first cathode layer 40 away from the organic light-emitting layer 30
  • the second cathode layer 60 is disposed on the side of the non-metal layer 50 away from the first cathode layer 40 .
  • the display area of the display panel 01 includes a plurality of pixel structures 02
  • the frame area includes a plurality of metal electrodes 03 of the touch display panel and anode driving lines 04 of each row of the pixel structures 02 .
  • the metal electrode 03 may be MOALMO metal.
  • the anode driving circuit 04 is configured to output a voltage signal to the anode layer of each pixel structure 02 to cause the pixel structure 02 to emit light.
  • the pixel structure is sectioned to obtain a cross-sectional view of the display panel shown in Figure 2.
  • the substrate 10 is usually a glass substrate, and the anode layer 20 provided on the surface of the substrate 10 is configured to provide holes.
  • the anode layer 20 may be deposited into a thin film by evaporating indium tin oxide (ITO).
  • ITO indium tin oxide
  • the organic light-emitting layer 30 provided on the other surface of the anode layer 20 is an important film layer that enables the display panel 01 to emit light.
  • the organic light-emitting layer 30 may be a film layer formed of a semiconductor light-emitting material.
  • a cathode layer is provided on the side of the organic light-emitting layer 30 away from the anode layer 20.
  • the cathode layer includes a first cathode layer 40, a non-metal layer 50 and a second cathode layer 60.
  • the second cathode layer 60 is connected to the first cathode layer 40 through the non-metal layer 50, so that the first cathode layer 40, the non-metal layer 50 and the second cathode layer 60 collectively serve as a cathode film layer.
  • the second cathode layer 60 is connected to the cathode driving circuit and is configured to provide electrons.
  • the first cathode layer 40 is configured to increase the thickness of the cathode layer and reduce the thickness of the cathode formed by the first cathode layer 40, the non-metal layer 50 and the second cathode layer 60. layer resistance.
  • the electrons are transmitted to the first cathode layer 40 through the connection structure between the first cathode layer 40 and the second cathode layer 60, thereby cooperating with the anode layer 20 to enable the display panel to achieve normal display.
  • connection part between the second cathode layer 60 and the first cathode layer 40 is a linear structure, and the linear structure has a large resistance. Therefore, even if the prepared first cathode layer 40 has many defects, when a larger current flows through the pixel structure in the display panel, the current will generate higher heat on the linear structure, causing the linear structure to take priority over the first cathode. Defects on the layer 40 or the second cathode layer 60 are melted, thereby protecting the film structure of the pixel structure from being damaged. Based on the above process, the linear connection structure formed by the second cathode layer 60 and the first cathode layer 40 functions as a fuse, improving the reliability of the pixel structure in the display panel.
  • the technical solution of this embodiment is to form a cathode film layer by stacking the first cathode layer 40, the non-metal layer 50 and the second cathode layer 60, and the second cathode layer 60 and the first cathode layer 40 are connected through the non-metal layer 50.
  • the structure is a linear connection structure with large resistance. If a larger current flows through the pixel structure in the display panel, the larger current will generate higher heat on the linear connection structure between the first cathode layer 40 and the second cathode layer 60 , thus giving priority to the linear connection structure.
  • the defects on the first cathode layer 40 or the second cathode layer 60 are fused to protect the film structure of the pixel structure from being damaged, thereby improving the reliability of the pixel structure in the display panel and improving the display effect.
  • FIG. 3 is a schematic structural diagram of a non-metallic layer of a display panel provided by an embodiment of the present application.
  • the non-metallic layer 50 is provided with a plurality of penetrating holes 51 ; the plurality of holes 51 are randomly distributed.
  • the non-metallic layer 50 is the film layer in the early stage of film formation.
  • the non-metallic layer 50 has a plurality of penetrating holes 51 randomly distributed on it. That is to say, the non-metallic layer 50 is similar to a mesh-like film. Since the holes 51 on the non-metal layer 50 are formed in the early stage of the film formation process, by controlling the growth time of the non-metal layer 50, the non-metal layer 50 in the early stage of film formation is obtained. Machines are distributed on the non-metallic layer 50.
  • the second cathode layer 60 is filled in the plurality of holes 51 on the non-metal layer 50 and is in contact with the first cathode layer 40 .
  • the cathode material is filled in the plurality of holes 51 on the non-metal layer 50 to form an extremely fine columnar structure, that is, a linear connection structure 52, and is formed on the non-metallic layer 50.
  • a second cathode layer 60 is formed on the metal layer 50 , so that the second cathode layer 60 is in contact with the first cathode layer 40 through the cathode material filled in the holes 51 . Therefore, electrons provided by the second cathode layer 60 connected to the cathode driving circuit can be transported to the first cathode layer 40 through the linear connection structure 52 and injected into the organic light-emitting layer 30 .
  • holes provided by the anode layer 20 are also injected into the organic light-emitting layer 30 to form electron-hole pairs with electrons, so that the organic light-emitting layer 30 emits light and the display panel achieves normal display.
  • the non-metallic layer 50 includes aromatic amine compounds. Aromatic amine compounds have good thermal stability and good luminous efficiency.
  • the thickness of the first cathode layer 40 and the second cathode layer 60 is greater than or equal to 5 nm, and the thickness of the non-metal layer 50 is 0.5-1 nm.
  • the thickness of the cathode layer in the pixel structure of the PMOLED display panel needs to be greater than 100 nm
  • the thickness of the first cathode layer 40 may be 50-150 nm
  • the thickness of the second cathode layer 60 may be 100 nm.
  • the non-metallic layer 50 is prepared with a thin thickness to obtain a network film layer.
  • the cathode layer can also be set to consist of a third cathode layer and a non-metal layer.
  • the following embodiments will describe the structure of a display panel with yet another cathode layer structure.
  • FIG. 4 is a schematic structural diagram of yet another display panel provided by an embodiment of the present application.
  • the cathode layer of the display panel may further include a third cathode layer 70 and a non-metal layer 80 .
  • the third cathode layer 70 is disposed on the side of the organic light-emitting layer 30 away from the anode layer 20
  • the non-metal layer 80 is disposed on the side of the third cathode layer 70 away from the organic light-emitting layer 30 .
  • the thickness of the third cathode layer 70 is 50-100 nm.
  • the third cathode layer 70 is connected to the cathode driving circuit and configured to provide electrons and input electrons to the organic light-emitting layer 30 .
  • the surface of the third cathode layer 70 has many defects.
  • the non-metal layer 80 provided on the third cathode layer 70 has a thickness of 50 to 100 nm, and the non-metal layer 80 may include an aromatic amine compound.
  • the metal layer 80 is a continuous dense film that can cover or fill defects existing on the surface of the third cathode layer 70, thereby preventing a large amount of heat generated at the defects from burning the film structure when a large current flows through the corresponding pixel structure.
  • the non-metal layer 80 can cover the peak defects on the surface of the third cathode layer 70 and fill the pit defects on the surface of the third cathode layer 70 .
  • the non-metallic layer 80 is prepared on the side of the third cathode layer 70 away from the organic light-emitting layer 30, a thermal evaporation method is used to evaporate the organic non-metallic material at a high temperature, and the organic non-metallic material is deposited on the surface of the third cathode layer 70 to form the non-metallic layer 80.
  • the high-temperature evaporation environment is similar to the annealing process, and the defects on the surface of the third cathode layer 70 can be repaired.
  • the deposited non-metallic layer 80 can also fill or isolate the defects on the surface of the third cathode layer 70, thereby protecting the third cathode layer 70 from being damaged by the surface defects.
  • FIG. 5 is a schematic structural diagram of yet another display panel provided by an embodiment of the present application. Based on the above-mentioned embodiments, referring to FIG. 5 , the display panel further includes: a pixel definition layer 90;
  • a plurality of openings are provided on the pixel definition layer 90 , and the openings are arranged in an array; the openings expose the anode layer 20 , so that the organic light-emitting layer 30 contacts the anode layer 20 at the openings.
  • the opening of the pixel definition layer 90 is set to expose the conductive circuit prepared on the anode layer 20 so that the anode layer 20 and the organic light-emitting layer 30 are in contact with each other at the opening to form multiple pixel structures to achieve normal operation of the display panel. show.
  • the pixel definition layer 90 can be prepared and formed using a positive photoresist, and the areas between the openings of the pixel definition layer 90 are exposed through a yellow light process, and the opening areas are etched, leaving the portion between the opening areas.
  • FIG. 6 is a schematic flowchart of a display panel preparation method provided by an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a display panel corresponding to multiple steps of a display panel preparation method provided by an embodiment of the present application. Referring to Figures 6 and 7, the display panel preparation method includes the following steps.
  • an anode film layer is formed on the surface of the substrate 10 by sputtering using a physical vapor deposition method, for example, a magnetron sputtering method.
  • the anode film layer is patterned using a yellow light process to obtain an anode layer 20 with conductive circuits.
  • the thickness of the anode layer 20 is 130-170 nm.
  • a thermal evaporation method is used to evaporate multiple layers of organic light-emitting materials on the anode layer 20 to obtain a dense organic light-emitting material film layer to form the organic light-emitting layer 30 .
  • the thickness of the organic light-emitting layer 30 is 250-400 nm.
  • the first cathode layer 40 is obtained on the organic light-emitting layer 30 by thermal evaporation or E-beam evaporation.
  • aluminum can be used as the cathode material to obtain an aluminum film as the first cathode layer 40 .
  • an aromatic amine compound is evaporated on the first cathode layer 40 by thermal evaporation to form a thin non-metal layer 50 .
  • a cathode material is evaporated using a thermal evaporation method or an electron beam evaporation method to form the second cathode layer 60.
  • the cathode material is evaporated on the surface of the non-metal layer 50 by thermal evaporation or electron beam evaporation to obtain the second cathode layer 60 .
  • the second cathode layer 60 and the first cathode layer 40 are made of the same material.
  • both the second cathode layer 60 and the first cathode layer 40 may use aluminum as the cathode material.
  • the display panel produced by the display panel preparation method provided by the embodiment of the present application can effectively eliminate the damage to the pixel structure caused by defects formed during the preparation process of the cathode layer, improve the reliability of the pixel structure, and improve the display effect of the display panel.
  • thermal evaporation method to evaporate organic non-metallic materials to form non-metallic layer 50, including:
  • a thin non-metal layer 50 is formed by evaporation to retain the holes 51 distributed on the non-metal layer 50; the thickness of the non-metal layer 50 is 0.5-1 nm.
  • the evaporated film material nucleates and grows, and finally forms a continuous and complete film.
  • Organic non-metallic materials are evaporated by thermal evaporation to form multiple nucleation points.
  • the nucleation points gradually grow into island-like structures.
  • multiple island-like structures grow to be connected to each other but do not completely form a continuous film, multiple random nucleation points are formed.
  • the thickness of the mesh-like film with distributed holes 51 is relatively thin, that is, the non-metallic layer 50 is obtained.
  • patterning the anode film layer and forming the anode layer 20 also includes:
  • the pixel definition layer material is coated on the anode layer 20 , and a patterning process is performed on the pixel definition layer material to form the pixel definition layer 90 .
  • the pixel definition layer 90 is prepared on the anode layer 20 through a yellow light process.
  • Positive photoresist is used as the pixel definition layer material to form multiple openings.
  • pixel definition layer 90. The openings are arranged in an array to expose the anode layer 20 so that the anode layer 20 is in contact with the organic light-emitting layer 30 to form a pixel structure.
  • FIG. 8 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • the display device includes the display panel described in any of the above embodiments.
  • the display panel may be a mobile phone panel or the like.
  • the display panel is an organic light-emitting semiconductor (Organic Light-Emitting Diode, OLED) display panel, which may include a passively driven OLED (PMOLED) display panel and an actively driven OLED (Active Matrix OLED, AMOLED) display panel.
  • OLED Organic Light-emitting semiconductor
  • PMOLED passively driven OLED
  • AMOLED Active Matrix OLED
  • the basic principle of OLED display panel luminescence is: by using the transparent electrode and the metal electrode as the anode and cathode of the pixel structure respectively, driven by a certain voltage, the transparent electrode injects holes into the hole transport layer, and the metal electrode injects electrons into the electron transport layer layer. Holes and electrons migrate to the organic light-emitting layer through the hole transport layer and the electron transport layer respectively, and combine to form electron-hole pairs to generate energy excitons, which excite the luminescent molecules in the organic light-emitting layer to emit light to achieve normal display of the display panel. .
  • the display device includes a display panel in which a first cathode layer, a non-metal layer and a second cathode layer are stacked, and the first cathode layer, the non-metal layer and the second cathode layer together serve as the cathode in the pixel structure.
  • the second cathode layer is connected to the first cathode layer through the through hole on the non-metal layer, and the connection part between the second cathode layer and the first cathode layer in the through hole is a linear connection structure.

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Abstract

一种显示面板、显示面板制备方法及显示装置。该显示面板包括：衬底(10)、阳极层(20)、有机发光层(30)、第一阴极层(40)、非金属层(50)和第二阴极层(60)；阳极层(20)设置于衬底(10)的表面，有机发光层(30)设置于阳极层(20)远离衬底(10)的一侧，第一阴极层(40)设置于有机发光层(30)远离阳极层(20)的一侧，非金属层(50)设置于第一阴极层(40)远离有机发光层(30)的一侧，第二阴极层(60)设置于非金属层(50)远离第一阴极层(40)的一侧。

Description

显示面板、显示面板制备方法及显示装置
本申请要求在2022年09月16日提交中国专利局、申请号为202211127606.2的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及显示技术领域，例如涉及一种显示面板、显示面板制备方法及显示装置。
背景技术
被动式有机电激发光二极管(Passive matrix Organic Light-Emitting Diode，PMOLED)中阴极膜层的制备工艺具有两种，一种是热蒸发法，一种是电子束蒸发法。其中，采用热蒸镀法制备的阴极膜层的致密性较高，效果较好。但高温蒸发源易发生异常，导致生产效率较低。对于电子束蒸发法，虽然蒸发效率高且蒸发过程中的稳定性较好，但蒸发后沉积得到的膜层致密性较低，若有较大的电流流过像素结构，膜层上存在的多种缺陷易产生较高热量，导致像素结构烧毁，使像素结构的可靠性下降，从而影响PMOLED显示面板的显示效果。
发明内容
本申请提供一种显示面板、显示面板制备方法及显示装置，以在保证生产效率的情况下，提高像素结构的可靠性，改善PMOLED显示面板的显示效果。
根据本申请的一方面，提供了一种显示面板，包括：
衬底；
阳极层，所述阳极层设置于所述衬底的表面；
有机发光层，所述有机发光层设置于所述阳极层远离所述衬底的一侧；
第一阴极层，所述第一阴极层设置于所述有机发光层远离所述阳极层的一侧；
非金属层，所述非金属层设置于所述第一阴极层远离所述有机发光层的一侧；
第二阴极层，所述第二阴极层设置于所述非金属层远离所述第一阴极层的一侧。
可选的，所述非金属层设置有多个贯穿的孔洞；
多个孔洞随机分布。
可选的，所述第二阴极层填充于所述非金属层上的所述多个孔洞中，并与所述第一阴极层接触。
可选的，所述第一阴极层和所述第二阴极层的厚度大于或等于5nm，所述非金属层的厚度为0.5～1nm。
可选的，所述非金属层包括芳胺类化合物。
可选的，该显示面板还包括：像素定义层；所述像素定义层上设置有多个开口，所述多个开口呈阵列排布；所述多个开口暴露所述阳极层，使所述有机发光层在所述多个开口处与所述阳极层接触。
根据本申请的另一方面，提供了一种显示面板制备方法，该制备方法包括：
提供一个衬底；
在所述衬底的表面，采用物理气相沉积法溅射阳极材料，形成阳极膜层，并对阳极膜层进行图案化，形成阳极层；
在所述阳极层远离所述衬底的一侧表面，采用热蒸镀法蒸镀有机发光材料，形成有机发光层；
在所述有机发光层远离所述阳极层的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第一阴极层；
在所述第一阴极层远离所述有机发光层的一侧表面，采用热蒸镀法蒸镀有机非金属材料，形成非金属层；
在所述非金属层远离所述第一阴极层的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第二阴极层。
可选的，所述采用热蒸镀法蒸镀有机非金属材料，形成非金属层，包括：
蒸镀形成厚度较薄的所述非金属层，以保留所述非金属层上分布的孔洞；其中，所述非金属层的厚度为0.5～1nm。
可选的，在所述对阳极膜层进行图案化，形成阳极层之后，还包括：
在所述阳极层上涂布像素定义层材料，对像素定义层材料进行图案化工艺，形成像素定义层。
根据本申请的另一方面，还提供了一种显示装置，包括上述的显示面板。
附图说明
图1是根据本申请实施例提供的一种显示面板的俯视结构示意图；
图2是根据本申请实施例提供的一种显示面板的剖面结构示意图；
图3是根据本申请实施例提供的一种显示面板的非金属层的结构示意图；
图4是根据本申请实施例提供的又一种显示面板的结构示意图；
图5是根据本申请实施例提供的又一种显示面板的结构示意图；
图6是根据本申请实施例提供的一种显示面板制备方法的流程示意图；
图7是根据本申请实施例提供的一种显示面板制备方法多个步骤对应的显示面板的结构示意图；
图8是根据本申请实施例提供的一种显示装置的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述，所描述的实施例仅仅是本申请一部分的实施例，而不是全部的实施例。
本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。这样使用的数据在适当情况下可以互换，以便这里描述的本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于列出的那些步骤或单元，而是可包括没有列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
本申请实施例提供一种显示面板。图1是本申请实施例提供的一种显示面板的俯视结构示意图，图2是本申请实施例提供的一种显示面板沿A-A’方向的剖面结构示意图。结合图1和图2，该显示面板包括：衬底10、阳极层20、有机发光层30、第一阴极层40、非金属层50和第二阴极层60。
阳极层20设置于衬底10的表面，有机发光层30设置于阳极层20远离衬底10的一侧，第一阴极层40设置于有机发光层30远离阳极层20的一侧，非金属层50设置于第一阴极层40远离有机发光层30的一侧，第二阴极层60设置于非金属层50远离第一阴极层40的一侧。
如图1所示，显示面板01的显示区包括多个像素结构02，边框区包括触摸式显示面板的多个金属电极03以及每行像素结构02的阳极驱动线路04。示例性地，金属电极03可以是钼铝钼MOALMO金属。阳极驱动线路04设置为对每个像素结构02的阳极层输出电压信号，使像素结构02发光。沿A-A’方向对 像素结构作剖切，得到图2所示的显示面板的剖面图。参见图2，衬底10多采用玻璃衬底，在衬底10的表面设置的阳极层20设置为提供空穴。示例性地，阳极层20可以通过蒸发氧化铟锡(Indium tin oxide，ITO)沉积成薄膜得到。在阳极层20的另一表面设置的有机发光层30是使显示面板01实现发光的重要膜层，示例性地，有机发光层30可以是半导体发光材料形成的膜层。
在有机发光层30远离阳极层20的一侧设置有阴极层，本实施例提供的显示面板结构中，阴极层包括第一阴极层40、非金属层50和第二阴极层60。第二阴极层60通过非金属层50与第一阴极层40连接，使第一阴极层40、非金属层50和第二阴极层60整体作为阴极膜层。第二阴极层60与阴极驱动线路连接，设置为提供电子，第一阴极层40设置为增加阴极层的厚度，减小第一阴极层40、非金属层50以及第二阴极层60构成的阴极层的电阻。电子通过第一阴极层40与第二阴极层60之间的连接结构传输至第一阴极层40，从而与阳极层20共同作用，使显示面板实现正常显示。
第二阴极层60与第一阴极层40的连接部分为线性结构，线性结构具有较大的电阻。因此，即使制备的第一阴极层40存在较多缺陷，当有较大的电流流过显示面板中的像素结构时，电流在线性结构上产生较高的热量，使线性结构优先于第一阴极层40或第二阴极层60上的缺陷熔断，从而保护像素结构的膜层结构不被损坏。基于上述过程，第二阴极层60与第一阴极层40形成的线性连接结构起到保险丝的作用，提高了显示面板中像素结构的可靠性。
本实施例的技术方案通过层叠设置第一阴极层40、非金属层50和第二阴极层60构成阴极膜层，且第二阴极层60与第一阴极层40通过非金属层50连接，连接结构为线性连接结构，具有较大的电阻。若较大的电流流过显示面板中的像素结构，较大的电流在第一阴极层40与第二阴极层60之间的线性连接结构上会产生较高的热量，从而使线性连接结构优先于第一阴极层40或第二阴极层60上的缺陷熔断，保护像素结构的膜层结构不被损坏，提高显示面板中像素结构的可靠性，改善显示效果。
可选的，图3是本申请实施例提供的一种显示面板的非金属层的结构示意图。在上述实施例的基础上，如图3所示，非金属层50设置有多个贯穿的孔洞51；多个孔洞51随机分布。
基于薄膜生长机理，在薄膜形成初期，薄膜上具有多个贯穿的孔洞，形成的薄膜不是连续完整的薄膜。非金属层50即为薄膜形成初期的膜层，非金属层50上随机分布有多个贯穿的孔洞51，也就是说，非金属层50类似于一层网状薄膜。由于非金属层50上的孔洞51是在成膜过程的初期形成的，因此，通过控制非金属层50的生长时间，得到成膜初期的非金属层50，形成的孔洞51随 机分布于非金属层50上。
可选的，在上述多个实施例的基础上，参见图2和图3，第二阴极层60填充于非金属层50上的多个孔洞51中，并与第一阴极层40接触。
示例性地，在非金属层50上设置第二阴极层60时，阴极材料填充于非金属层50上的多个孔洞51中，形成极细的柱状结构，即线性连接结构52，并在非金属层50上形成第二阴极层60，从而使第二阴极层60通过孔洞51中填充的阴极材料与第一阴极层40接触。因此，与阴极驱动线路连接的第二阴极层60提供的电子可通过线性连接结构52传输至第一阴极层40，并注入有机发光层30。同时，阳极层20提供的空穴也注入有机发光层30，与电子形成电子-空穴对，从而使有机发光层30发光，显示面板实现正常显示。
当显示面板的多个像素中流过较大的电流时，由于第一阴极层40与第二阴极层60之间形成的线性连接结构52的电阻较大，因此，较大的电流在线性连接结构52处产生较高的热量，相对于第一阴极层40或第二阴极层60上的缺陷处优先熔断，从而保护了第一阴极层40或第二阴极层60的结构，提高了多个像素结构的可靠性。示例性地，非金属层50包括芳胺类化合物。芳胺类化合物具有良好的热稳定性以及良好的发光效率。
可选的，在上述多个实施例的基础上，继续参见图2，第一阴极层40和第二阴极层60的厚度大于或等于5nm，非金属层50的厚度为0.5～1nm。
示例性地，PMOLED显示面板的像素结构中的阴极层的厚度需大于100nm，第一阴极层40的厚度可以为50～150nm，第二阴极层60的厚度可以为100nm。非金属层50制备的厚度较薄，以得到网状膜层。
除了将显示面板中像素结构的阴极层设置为上述结构，可有效消除阴极层上缺陷对于相应像素结构的损坏以外，还可将阴极层设置为由第三阴极层和非金属层构成。以下实施例将对具有又一种阴极层结构的显示面板的结构进行说明。
可选的，图4是本申请实施例提供的又一种显示面板的结构示意图。在上述多个实施例的基础上，如图4所示，显示面板的阴极层还可包括第三阴极层70和非金属层80。第三阴极层70设置于有机发光层30远离阳极层20的一侧，非金属层80设置于第三阴极层70远离有机发光层30的一侧。
其中，第三阴极层70的厚度为50～100nm，第三阴极层70与阴极驱动线路连接，设置为提供电子，并输入电子至有机发光层30。但在制备第三阴极层70的过程中，第三阴极层70表面具有许多缺陷。第三阴极层70上设置的非金属层80，厚度为50～100nm，且非金属层80可包括芳胺类化合物。较厚的非金 属层80为连续致密薄膜，可对第三阴极层70表面存在的缺陷进行覆盖或填充，从而避免在较大电流流过相应像素结构时，缺陷处产生的大量热量，烧毁膜层结构。示例性地，非金属层80可对第三阴极层70表面的尖峰缺陷进行覆盖，对第三阴极层70表面的凹坑缺陷进行填充。
此外，在第三阴极层70远离有机发光层30的一侧制备非金属层80时，采用热蒸镀法，高温下蒸发有机非金属材料，并将有机非金属材料沉积至第三阴极层70的表面，形成非金属层80。高温蒸发的环境类似退火工艺，可对第三阴极层70表面的缺陷进行修补，沉积的非金属层80也可对第三阴极层70表面的缺陷进行填充或隔绝，从而保护第三阴极层70不受表面缺陷的影响而损坏。
可选的，图5是本申请实施例提供的又一种显示面板的结构示意图。在上述多个实施例的基础上，参见图5，该显示面板还包括：像素定义层90；
像素定义层90上设置有多个开口，开口呈阵列排布；开口暴露阳极层20，使有机发光层30在开口处与阳极层20接触。
示例性地，像素定义层90的开口设置为将阳极层20上制备的导电线路露出，使阳极层20与有机发光层30在开口处相接触，形成多个像素结构，以实现显示面板的正常显示。示例性地，像素定义层90可采用正性光刻胶制备形成，并通过黄光工艺对像素定义层90的开口之间的区域进行曝光，蚀刻开口区域，保留开口区域之间的部分。
本申请实施例还提供一种显示面板制备方法。图6是本申请实施例提供的一种显示面板制备方法的流程示意图，图7是本申请实施例提供的一种显示面板制备方法多个步骤对应的显示面板的结构示意图。参见图6和图7，该显示面板制备方法包括以下步骤。
S110、提供一个衬底10。
S120、在衬底10的表面，采用物理气相沉积法溅射阳极材料，形成阳极膜层，并对阳极膜层进行图案化，形成阳极层20。
示例性地，在衬底10的表面通过物理气相沉积法，例如，磁控溅射方法溅射形成阳极膜层。在阳极膜层上利用黄光工艺进行图案化，得到具有导电线路的阳极层20。示例性的，阳极层20的厚度为130～170nm。
S130、在阳极层20远离衬底10的一侧表面，采用热蒸镀法蒸镀有机发光材料，形成有机发光层30。
示例性地，采用热蒸镀法在阳极层20上蒸镀多层有机发光材料，得到致密的有机发光材料膜层，构成有机发光层30。示例性的，有机发光层30的厚度为250～400nm。
S140、在有机发光层30远离阳极层20的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第一阴极层40。
示例性地，在有机发光层30上通过热蒸镀法或电子束(E-beam)蒸镀法得到第一阴极层40。示例性地，可采用铝作为阴极材料，得到铝薄膜作为第一阴极层40。
S150、在第一阴极层40远离有机发光层30的一侧表面，采用热蒸镀法蒸镀有机非金属材料，形成非金属层50。
示例性地，在第一阴极层40上通过热蒸镀法蒸镀芳胺类化合物，形成较薄的非金属层50。
S160、在非金属层50远离第一阴极层40的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第二阴极层60。
示例性地，在非金属层50的表面通过热蒸镀法或电子束蒸镀法蒸镀阴极材料，得到第二阴极层60。其中，第二阴极层60与第一阴极层40的材料相同。示例性地，第二阴极层60和第一阴极层40均可采用铝作为阴极材料。
本申请实施例提供的显示面板制备方法制得的显示面板，可有效消除阴极层制备过程中形成的缺陷对像素结构的损坏，提高像素结构的可靠性，改善显示面板的显示效果。
可选的，在上述实施例的基础上，继续参见图7，采用热蒸镀法蒸镀有机非金属材料，形成非金属层50，包括：
蒸镀形成厚度较薄的非金属层50，以保留非金属层50上分布的孔洞51；其中，非金属层50的厚度为0.5～1nm。
示例性地，依据薄膜生长机理，蒸发沉积的薄膜材料通过形核、长大，最后形成连续完整的薄膜。通过热蒸镀法蒸镀有机非金属材料形成多个形核点，形核点逐渐生长为岛状结构，多个岛状结构生长至相互连接但未完全形成连续薄膜时，形成具有多个随机分布的孔洞51的网状薄膜，网状薄膜的厚度较薄，即得到非金属层50。
可选的，在上述实施例的基础上，对阳极膜层进行图案化，形成阳极层20之后，还包括：
在阳极层20上涂布像素定义层材料，对像素定义层材料进行图案化工艺，形成像素定义层90。
示例性地，通过黄光工艺制备阳极层20后，在阳极层20上通过黄光工艺制备像素定义层90。采用正性光刻胶作为像素定义层材料，形成具有多个开口 的像素定义层90。开口呈阵列排布，暴露阳极层20，使阳极层20与有机发光层30接触，形成像素结构。
本申请实施例还提供一种显示装置。图8是本申请实施例提供的一种显示装置的结构示意图。如图8所示，该显示装置包括上述任意实施例所述的显示面板，该显示面板可以是手机面板等。示例性地，该显示面板为有机发光半导体(Organic Light-Emitting Diode，OLED)显示面板，可以包括被动驱动式OLED(PMOLED)显示面板和主动驱动式OLED(Active Matrix OLED，AMOLED)显示面板。OLED显示面板发光的基本原理是：通过将透明电极和金属电极分别作为像素结构的阳极和阴极，在一定电压的驱动下，透明电极将空穴注入空穴传输层，金属电极将电子注入电子传输层。空穴和电子分别通过空穴传输层和电子传输层迁移至有机发光层，并结合成电子-空穴对，产生能量激子，激发有机发光层中的发光分子发光，以实现显示面板正常显示。
其中，该显示装置包括的显示面板中层叠设置有第一阴极层、非金属层和第二阴极层，第一阴极层、非金属层和第二阴极层共同作为像素结构中的阴极。并且第二阴极层通过非金属层上的贯穿孔洞与第一阴极层连接，第二阴极层与第一阴极层在贯穿孔洞中的连接部分为线性连接结构。当较大的电流流过显示面板中的像素结构时，线性连接结构处产生较高热量，优先于第一阴极层和第二阴极层上存在的缺陷熔断，提高了像素结构的可靠性，改善了显示面板的显示效果。
上述实施方式，并不构成对本申请保护范围的限制。根据设计要求和其他因素，可以进行多种修改、组合、子组合和替代。

Claims (10)

  1. 一种显示面板，包括：
    衬底；
    阳极层，所述阳极层设置于所述衬底的表面；
    有机发光层，所述有机发光层设置于所述阳极层远离所述衬底的一侧；
    第一阴极层，所述第一阴极层设置于所述有机发光层远离所述阳极层的一侧；
    非金属层，所述非金属层设置于所述第一阴极层远离所述有机发光层的一侧；
    第二阴极层，所述第二阴极层设置于所述非金属层远离所述第一阴极层的一侧。
  2. 根据权利要求1所述的显示面板，其中，所述非金属层设置有多个贯穿的孔洞；
    多个孔洞随机分布。
  3. 根据权利要求2所述的显示面板，其中，所述第二阴极层填充于所述非金属层上的所述多个孔洞中，并与所述第一阴极层接触。
  4. 根据权利要求3所述的显示面板，其中，所述第一阴极层和所述第二阴极层的厚度大于或等于5nm，所述非金属层的厚度为0.5～1nm。
  5. 根据权利要求1所述的显示面板，其中，所述非金属层包括芳胺类化合物。
  6. 根据权利要求1所述的显示面板，还包括：像素定义层；
    所述像素定义层上设置有多个开口，所述多个开口呈阵列排布；所述多个开口暴露所述阳极层，使所述有机发光层在所述多个开口处与所述阳极层接触。
  7. 一种显示面板制备方法，包括：
    提供一个衬底；
    在所述衬底的表面，采用物理气相沉积法溅射阳极材料，形成阳极膜层，并对所述阳极膜层进行图案化，形成阳极层；
    在所述阳极层远离所述衬底的一侧表面，采用热蒸镀法蒸镀有机发光材料，形成有机发光层；
    在所述有机发光层远离所述阳极层的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第一阴极层；
    在所述第一阴极层远离所述有机发光层的一侧表面，采用热蒸镀法蒸镀有机非金属材料，形成非金属层；
    在所述非金属层远离所述第一阴极层的一侧表面，采用热蒸镀法或电子束蒸镀法蒸镀阴极材料，形成第二阴极层。
  8. 根据权利要求7所述的显示面板制备方法，其中，所述采用热蒸镀法蒸镀有机非金属材料，形成非金属层，包括：
    蒸镀形成厚度较薄的所述非金属层，以保留所述非金属层上分布的孔洞；其中，所述非金属层的厚度为0.5～1nm。
  9. 根据权利要求7所述的显示面板制备方法，其中，在所述对所述阳极膜层进行图案化，形成阳极层之后，还包括：
    在所述阳极层上涂布像素定义层材料，对所述像素定义层材料进行图案化工艺，形成像素定义层。
  10. 一种显示装置，包括如权利要求1至6中任一项所述的显示面板。
PCT/CN2023/110703 2022-09-16 2023-08-02 显示面板、显示面板制备方法及显示装置 WO2024055768A1 (zh)

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CN207068930U (zh) * 2017-07-06 2018-03-02 合肥京东方光电科技有限公司 Oled显示基板和oled显示装置
CN108807497A (zh) * 2018-08-06 2018-11-13 京东方科技集团股份有限公司 一种amoled显示面板及其制备方法
CN108987430A (zh) * 2017-06-05 2018-12-11 京东方科技集团股份有限公司 一种有机电致发光二极管、阵列基板及制作方法
CN115528074A (zh) * 2022-09-16 2022-12-27 苏州清越光电科技股份有限公司 一种显示面板、显示面板制备方法及显示装置

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