WO2024045057A1 - 一种发光面板及其制备方法、发光装置 - Google Patents

一种发光面板及其制备方法、发光装置 Download PDF

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Publication number
WO2024045057A1
WO2024045057A1 PCT/CN2022/116247 CN2022116247W WO2024045057A1 WO 2024045057 A1 WO2024045057 A1 WO 2024045057A1 CN 2022116247 W CN2022116247 W CN 2022116247W WO 2024045057 A1 WO2024045057 A1 WO 2024045057A1
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Prior art keywords
light
emitting
electrode
electrically connected
conductive
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PCT/CN2022/116247
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English (en)
French (fr)
Inventor
张粲
丛宁
赵欣欣
玄明花
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2022/116247 priority Critical patent/WO2024045057A1/zh
Priority to CN202280002945.XA priority patent/CN117957657A/zh
Publication of WO2024045057A1 publication Critical patent/WO2024045057A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Definitions

  • the present application relates to the field of display technology, and in particular, to a light-emitting panel, a preparation method thereof, and a light-emitting device.
  • Micro Light Emitting Diode (Micro LED for short) and sub-millimeter Light Emitting Diode (Mini Light Emitting Diode for short) are the main forces in the development of LED (Light Emitting Diode) technology in recent years.
  • Micro/Mini LED light emitting The chip can be widely used in LCD backlights, Micro/Mini RGB displays, small-pitch displays and other fields.
  • Micro/Mini LED light-emitting chips require larger currents to achieve better luminous efficiency, but large currents will bring many problems to Micro/Mini LED light-emitting chips. Therefore, a new type of light-emitting chip is urgently needed to solve the problems caused by large current.
  • a light-emitting panel including:
  • a driving substrate the driving substrate includes a plurality of first conductive parts and a plurality of driving units arranged in an array, the first conductive parts are insulated from the driving units;
  • a plurality of light-emitting devices are arranged in an array on the driving substrate.
  • the light-emitting devices include a first electrode and a second electrode. Each of the second electrodes is electrically connected to one of the driving units.
  • the first electrode is connected to the driving unit.
  • the first conductive part is electrically connected; at least one connection point where the first electrode and the first conductive part are electrically connected is connected to the remaining first electrodes and the third conductive part except the first electrode and the first conductive part.
  • the conductive parts are electrically connected at different connection points.
  • all the first electrodes are divided into multiple groups, each group includes at least one first electrode, and each group is electrically connected to a different first conductive part.
  • each group includes one first electrode, and each first electrode is electrically connected to one first conductive part.
  • each group includes a plurality of first electrodes, and at least one first electrode in each group is electrically connected to a different first conductive part.
  • all the first electrodes in each group are electrically connected to one first conductive part.
  • each group includes at least three light-emitting devices of different colors, and each of the light-emitting devices of different colors is electrically connected to a different first conductive part.
  • the light-emitting panel includes at least a red light-emitting device, a blue light-emitting device and a green light-emitting device, the red light-emitting device is electrically connected to one of the first conductive parts, and the green light-emitting device is connected to one of the first conductive parts.
  • the conductive part is electrically connected, and the blue light-emitting device is electrically connected to one of the first conductive parts.
  • the driving substrate further includes a second conductive portion disposed between the light-emitting device and the driving unit, and the light-emitting device is electrically connected to the driving unit through the second conductive portion;
  • the second conductive part is insulated from the first conductive part;
  • At least one of the plurality of first conductive parts and the second conductive part are arranged in the same layer;
  • At least one of the plurality of first conductive parts is disposed on the same layer as the driving unit.
  • all of the first conductive parts and the third conductive part are arranged on the same layer.
  • the light-emitting device includes a light-emitting unit, the light-emitting unit includes a side surface, an opposite first surface and a second surface, the first surface and the second surface are respectively connected to the side surface, and the third surface is connected to the side surface respectively. Two surfaces are located on the side of the light-emitting unit away from the driving backplane;
  • the light-emitting device further includes an insulating part and an auxiliary electrode, the insulating part covering at least one side of the light-emitting unit; the auxiliary electrode is located at least on a side of the insulating part away from the light-emitting unit and connected with the light-emitting unit. Unit electrical connections.
  • the insulating part covers all the sides of the light-emitting unit
  • the auxiliary electrode is located on a side of the insulating portion away from the light-emitting unit and covers at least part of the second surface of the light-emitting unit.
  • the light-emitting unit includes the second electrode, the epitaxial wafer and the first electrode that are stacked on the driving backplane in sequence, the auxiliary electrode is electrically connected to the first electrode, and at least Cover part of the first electrode.
  • the light-emitting device further includes a reflective layer disposed between the driving backplane and the second electrode.
  • the driving substrate includes a first substrate, and the plurality of first conductive parts and the plurality of driving units arranged in the array are arranged on the first substrate;
  • the first substrate is a silicon substrate.
  • embodiments of the present application provide a light-emitting device, including the above-mentioned light-emitting panel.
  • embodiments of the present application provide a method for preparing the above-mentioned light-emitting panel, the method including:
  • the drive substrate includes a plurality of first conductive parts and a plurality of drive units arranged in an array, the first conductive parts are insulated from the drive units; a plurality of the light-emitting devices are formed
  • a device array is arranged on the driving substrate, the light-emitting device includes a first electrode and a second electrode, each of the second electrodes is electrically connected to one of the driving units, and the first electrode and the first conductive At least one connection point where the first electrode and the first conductive part are electrically connected is electrically connected to the remaining first electrodes and first conductive parts except the first electrode and the first conductive part.
  • the connection points are different.
  • Figure 1 is a schematic structural diagram of a light-emitting panel provided by an embodiment of the present application.
  • Figure 2 is a schematic structural diagram of another light-emitting panel provided by an embodiment of the present application.
  • Figure 3 is a schematic structural diagram of a driving unit provided by an embodiment of the present application.
  • Figure 4 is a schematic structural diagram of another driving unit provided by an embodiment of the present application.
  • Figure 5 is a schematic diagram of the change of luminous efficiency with current density in the related technology provided by the embodiment of the present application.
  • Figure 6 is a schematic diagram of a region display provided by an embodiment of the present application.
  • FIGS 7 to 13 are flow charts of the preparation process of the structure shown in Figure 1 provided by embodiments of the present application.
  • electrical connection may refer to a direct electrical connection between two components, or may refer to an electrical connection between two components via one or more other components; “electrical connection” may refer to a Electrical connection is made through wires, which may also refer to electrical connection through radio signals.
  • An embodiment of the present application provides a light-emitting panel, as shown in Figures 1 and 2.
  • the light-emitting panel includes:
  • the driving substrate includes a plurality of first conductive parts 1 and a plurality of driving units 2 arranged in an array.
  • the first conductive parts 1 are insulated from the driving units 2 .
  • a plurality of light-emitting devices are arranged in an array on the driving substrate.
  • the light-emitting devices include a first electrode 31 and a second electrode 32.
  • Each second electrode 32 is electrically connected to a driving unit 2.
  • the first electrode 31 is electrically connected to the first conductive part 1. Connection; connection points that are electrically connected to at least one first electrode 31 and the first conductive part 1, and connection points that are electrically connected to the remaining first electrodes 31 and the first conductive part 1 except the first electrode 31 and the first conductive part 1 different.
  • the above-mentioned driving substrate can be made using a mature integrated circuit CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) process.
  • CMOS Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor
  • the CMOS driving substrate can realize active addressing of pixels, including TCON (Timer Control Register, counter). Control register), OCP (Over Current Protection) and other circuits can achieve lightweighting.
  • TCON Timer Control Register, counter
  • Control register Control register
  • OCP Over Current Protection
  • the above driving substrate can also be other types of driving backplanes. The embodiments of this application are all explained by taking the driving substrate as a CMOS driving backplane as an example.
  • the driving substrate may include a driving unit, an insulating layer, a conductive layer, and other structures.
  • the material and number of layers of the insulating layer can be any one or a combination of silicon nitride, silicon oxide or silicon oxynitride; for example, the insulating layer
  • the layer can be one layer, or of course, it can be multiple layers.
  • the number of layers of the insulating layer can be determined based on the number of layers of the conductive layer, as long as there is at least one layer of insulating layer between adjacent conductive layers.
  • the material and number of layers of the conductive layer There are no specific limitations on the material and number of layers of the conductive layer.
  • the material of the conductive layer can be metal, etc.; for example, the conductive layer can be one layer, or of course it can be multiple layers.
  • the number of layers of the conductive layer It can be determined based on the function of the drive substrate.
  • FIG. 1 illustrates an example in which a conductive layer 13 and two insulating layers 23 are included between the driving unit 2 and the light-emitting device.
  • FIG. 2 illustrates an example in which the driving substrate includes multiple layers of insulating layers 12 and multiple layers of conductive layers 13 , and one layer of insulating layer 12 is disposed between adjacent conductive layers 13 .
  • each conductive layer 13 may include at least one conductive unit 6 , and the conductive unit 6 is configured to implement a specific function. Specifically, you can refer to related technologies to obtain the purpose of the conductive units in each conductive layer. Here, only the content related to the invention will be introduced, and no detailed description will be given.
  • each insulating layer 12 may include at least one via hole 7 , so that the conductive units 6 on both sides of the insulating layer 12 that need to be electrically connected can be electrically connected through the via hole 7 .
  • the material, structure, etc. of the above-mentioned first conductive part are not specifically limited here.
  • the material of the first conductive part may be metal, such as tungsten.
  • the above-mentioned first conductive part may include a common electrode line (Vcom line), so that a common voltage may be transmitted to the light-emitting device through the Vcom line.
  • Vcom line common electrode line
  • the first conductive part is not limited to transmitting the Vcom signal to the light-emitting device. The embodiments of this application are all described by taking the first conductive part to transmit the Vcom signal to the light-emitting device as an example.
  • the above-mentioned driving unit may include two transistors and one capacitor (2T1C); or the above-mentioned driving unit may include four transistors and one capacitor (4T1C); or the above-mentioned driving unit may include five transistors and one capacitor (5T1C). ).
  • the embodiments of the driving unit in this application are not limited to this.
  • the driving unit may also include more transistors, more capacitors, or may also include resistors (R) and other more electronic devices. , which can be specifically determined according to the design of the driving pixel circuit in the silicon-based backplane, and is not limited here. As can be seen from FIGS.
  • the driving unit 2 may include a capacitor C, a switching transistor T1 and a driving transistor T4.
  • One end 51 of the capacitor C is electrically connected to the switching transistor T1, and the other end 52 of the capacitor C is electrically connected to the switching transistor T1.
  • the driving transistor T4 is electrically connected.
  • Figure 3 illustrates an example in which the drive units are two rows and three columns.
  • the gate line Gate and the data line Data constitute a driving unit with two rows and three columns.
  • the first column is a driving unit for driving red (R) light-emitting devices
  • the second column is for driving blue (B) light-emitting devices.
  • the drive units in the third column are drive units that drive green (G) light-emitting devices.
  • One end of the light-emitting device of each drive unit transmits a Vcom signal, and one end of the switching transistor T1 of each drive unit transmits power.
  • Signal VDD Signal
  • the driving unit may also be a voltage-type driving unit as shown in FIG. 4 .
  • the difference between Figure 4 and Figure 3 is that one end of the capacitor C in Figure 3 is electrically connected to the driving transistor T4, while one end of the capacitor C in Figure 4 is connected to ground.
  • the driving substrate may also include at least a top metal layer (Top metal), and the top metal layer may include a plurality of second conductive parts 8 .
  • Top metal top metal layer
  • the top metal layer may include a plurality of second conductive parts 8 .
  • the driving transistor T4 includes a deep hydrazine layer 21 , an active layer 22 , a conductive layer 23 , a source-drain metal layer and a gate layer formed on the first substrate 11 .
  • the source and drain metal layers include a plurality of source electrodes 24 and a plurality of drain electrodes 25
  • the gate electrode layer includes a plurality of gate electrodes 25 .
  • the type of transistors in the above-mentioned driving unit is not limited here.
  • the transistor may include an N-type transistor; or the transistor may include a P-type transistor; or the transistor may include both an N-type transistor and a P-type transistor.
  • the driving unit can be understood as a pixel driving circuit.
  • the light-emitting device may include a Micro LED chip; or, the light-emitting device may also include a Mini LED chip.
  • the above-mentioned light-emitting device may include two electrodes and an epitaxial wafer, wherein the epitaxial wafer generally includes a current injection layer, a light-emitting layer and a hole injection layer that are stacked in sequence.
  • the plurality of light-emitting devices may all emit light of the same color; or the plurality of light-emitting devices may all emit light of different colors; or some of the light-emitting devices among the plurality of light-emitting devices may emit light of the same color.
  • FIG. 1 and FIG. 2 illustrate that the light-emitting device includes a red light-emitting device 3 , a green light-emitting device 4 and a blue light-emitting device 5 as an example.
  • the spacing between adjacent light-emitting devices is not specifically limited here.
  • the spacing between adjacent light-emitting devices includes 5 ⁇ m-100 ⁇ m, preferably 10 ⁇ m-30 ⁇ m.
  • the material of the above-mentioned first electrode may include metal, etc., such as: ITO (Indium Tin Oxides, indium tin oxide), chromium/platinum/gold, titanium/gold , titanium/silver/indium tin oxide (Ti/Ag/ITO), etc.
  • ITO Indium Tin Oxides, indium tin oxide
  • chromium/platinum/gold titanium/gold
  • titanium/silver/indium tin oxide Ti/Ag/ITO
  • the material of the second electrode is not specifically limited here.
  • the material of the second electrode may include metal, such as copper (Cu), tin (Sn), silver (Ag), gold (Au), indium (In), and so on.
  • the material of the second electrode may be bonded to the material of the second conductive part, for example, Cu-Sn, Sn-Ag, Sn-In, Sn-Au, Au-In, Cu-In, etc., where Cu -Sn means that if the material of the second electrode is Cu and the material of the second conductive part is Sn, the two can be bonded; or, if the material of the second electrode is Sn and the material of the second conductive part is Cu, The two can bond.
  • the first electrode may be an N-type electrode
  • the second electrode may be a P-type electrode
  • the first electrode may be an N-type electrode
  • P-type electrode in this case, the first electrode can be an N-type electrode.
  • FIGS. 1 to 2 illustrate an example of a light-emitting device including a first electrode 31 that is an N-type electrode and a second electrode 32 that is a P-type electrode.
  • Each of the above-mentioned second electrodes is electrically connected to a driving unit, and the method of electrically connecting the second electrodes to the driving unit is not specifically limited here.
  • the second electrode and the driving unit may be directly electrically connected; or, the second electrode and the driving unit may be electrically connected through other structures.
  • FIG. 1 and FIG. 2 illustrate an example in which the second electrode is electrically connected to the driving unit 2 through the second conductive part 8 .
  • first electrode and the first conductive part are electrically connected, and the method of electrical connection between the first electrode and the first conductive part is not specifically limited here.
  • the first electrode and the first conductive part may be directly electrically connected; or, the first electrode and the first conductive part may be electrically connected through other structures.
  • FIG. 1 and FIG. 2 illustrate an example in which the first electrode 31 is electrically connected to the first conductive part 1 through the auxiliary electrode 37 .
  • connection point at which the above-mentioned at least one first electrode and the first conductive part are electrically connected is different from the connection points at which the other first electrodes and the first conductive part are electrically connected except the first electrode and the first conductive part. It means that: it can be every Each first electrode is electrically connected to a first conductive part, that is, the connection points between all first electrodes and the first conductive part are different; or, a part of the first electrode may be electrically connected to a first conductive part, and another part may be electrically connected to a first conductive part. or , it may be that a part of the first electrodes is electrically connected to a first conductive part, and each first electrode in another part is electrically connected to a first conductive part. Of course, it is not limited to the above situation, and can also be other situations according to actual needs, which will not be described again here. Both FIG. 1 and FIG. 2 illustrate an example in which each first electrode 31 is electrically connected to a first conductive part 1 .
  • the current silicon (driver) substrate + Micro/Mini LED light-emitting chip micro-display technology is compatible with semiconductor processes and is suitable for mass production. Compared with other micro-display technologies, silicon substrate + LED technology has the advantages of not requiring a backlight, being relatively thin and light, simple optical system design, and fast response speed. Compared with OLED micro-display technology, silicon substrate + LED micro-display technology adopts Semiconductors and metal materials have the advantages of high brightness, high temperature resistance, and long life, so they have been widely studied. However, the current silicon substrate + LED requires a larger current to achieve higher luminous efficiency. As shown in Figure 5, when the current density reaches 10A/cm2 and above, the efficiency is significantly improved. The current density unit of the efficiency area usually used by silicon substrate + LED has also reached the level of A/cm2. However, high current will bring many defects to the silicon substrate + LED display, such as large IR drop (voltage drop) and increased power consumption.
  • a light-emitting panel including: a driving substrate, the driving substrate includes a plurality of first conductive parts and a plurality of driving units arranged in an array, the first conductive parts are insulated from the driving units;
  • a light-emitting device the array is arranged on the driving substrate, the light-emitting device includes a first electrode and a second electrode, each second electrode is electrically connected to a driving unit, the first electrode is electrically connected to the first conductive part; at least one first electrode The connection point electrically connected to the first conductive part is different from the connection points electrically connected to the other first electrodes and the first conductive part except the first electrode and the first conductive part.
  • At least one first electrode is no longer electrically connected to other first electrodes, at least one first electrode can be independently controlled by the voltage on the first conductive part, thereby effectively reducing the light-emitting surface of the light-emitting device.
  • the transparent first electrode has a serious IR drop problem caused by the large square resistance of the transparent first electrode; on the other hand, since at least one first electrode can be independently controlled by the voltage on the first conductive part, that is, at least one first electrode
  • the electrodes are independently patterned, so that at least one first electrode can be individually dynamically adjusted and controlled to reduce power consumption.
  • all first electrodes are divided into multiple groups, each group includes at least one first electrode, and each group is electrically connected to a different first conductive part. This can reduce the IR drop problem caused by large current and reduce power consumption, and at the same time, the first electrode can be controlled in different areas.
  • each of the above groups may include only one first electrode; or, each of the above groups may include multiple first electrodes.
  • each of the above groups includes a plurality of first electrodes
  • all first electrodes in each group may be electrically connected to one first conductive part; or, multiple first electrodes in each group may be electrically connected to different first conductive parts.
  • the following description takes 10 first electrodes as an example.
  • the first situation 10 first electrodes can be divided into 10 groups. At this time, each group includes 1 first electrode, and each 1 first electrode is electrically connected to 1 first conductive part, that is, there are 10 The first conductive part.
  • first electrodes can be divided into 3 groups.
  • the first group can include 3 first electrodes
  • the second group can include 3 first electrodes
  • the third group can include 4 first electrodes.
  • the third situation: 10 first electrodes can be divided into 3 groups.
  • the first group may include 1 first electrode
  • the second group may include 1 first electrode
  • the third group may include 8 first electrodes.
  • one first electrode in the first group is electrically connected to one first conductive part
  • one first electrode in the second group is electrically connected to one first conductive part
  • eight first electrodes in the third group are electrically connected to 1 first conductive part is electrically connected.
  • the fourth situation: 10 first electrodes can be divided into 3 groups.
  • the first group may include 1 first electrode
  • the second group may include 1 first electrode
  • the third group may include 8 first electrodes.
  • one first electrode in the first group is electrically connected to one first conductive part
  • one first electrode in the second group is electrically connected to one first conductive part
  • one of the eight first electrodes in the third group is electrically connected.
  • Two first electrodes are electrically connected to one first conductive part respectively.
  • Micro/Mini LED light-emitting chip can be used in near-eye displays such as AR (Augmented Reality, augmented reality)/VR (Virtual Reality, virtual reality).
  • AR Augmented Reality, augmented reality
  • VR Virtual Reality, virtual reality
  • a very important application scenario in near-eye displays such as AR/VR is gaze point rendering, that is, the display picture that the human eye is looking at needs to be high-definition and high refresh rate, and the picture that the human eye is not looking at can be low brightness and low refresh rate, as shown in the figure 6 shown.
  • area Z1 is a high-definition area, and other areas Z2 are low-definition areas.
  • the screen can be divided into nine areas, and the Vcom signal in each area is controlled independently.
  • the LED does not need a higher cross-voltage.
  • the Vcom signal in the low-definition area can be set higher; the Vcom signal in the high-definition area can be set higher.
  • the signal can be pulled low to obtain a larger cross-voltage and a highlighted display. This has great advantages for reducing power consumption and improving display effects.
  • each group includes a first electrode, and each first electrode is electrically connected to a first conductive part.
  • the driving substrate shown below in Figures 1 and 2 includes a red light-emitting device 3, a green light-emitting device 4 and a blue light-emitting device 5, and the first electrodes in the light-emitting devices of different colors are electrically connected to a first conductive part as Example to illustrate.
  • Table 1 gives the turn-on voltage (driving voltage Vcom) values of the red (R) light-emitting diode (LED), green (G) light-emitting diode (LED) and blue (B) light-emitting diode (LED).
  • Vcom driving voltage
  • the turn-on voltages of R LED, G LED and B LED are inconsistent, among which the driving voltage of R LED is the lowest.
  • Vcom can only be designed to the same value.
  • Vcom can only be set to the driving voltage of the R LED, such as -1.25V.
  • a larger data voltage is needed to increase the cross voltage of the B LED, which results in Increased power consumption.
  • Each first electrode in the light-emitting panel provided by the embodiment of the present application is electrically connected to a first conductive part, so that each first electrode can be independently controlled, thereby minimizing the IR drop caused by large current. problem and most effectively reduce power consumption.
  • the first electrode 31 of the red light-emitting device 3 is electrically connected to the first conductive part 1 through the auxiliary electrode 37 and the via hole 7. At this time, the first conductive part 1 can pass the Vcom signal.
  • the first electrodes of the green light-emitting device 4 and the blue light-emitting device 5 can also be supplied with independent Vcom signals, and the Vcom signals of the R LED, G LED and B LED can be set to different values respectively.
  • the lighting voltage of R LED is generally 1.7V
  • the lighting voltage of B LED is generally 2V. Therefore, the Vcom signal of R LED can be set to -1.7V, and the Vcom signal of B LED can be set to -2V, thus saving money. (0.38*I0*resolution) power consumption. That is to say, when the Vcom signals of R LED, G LED and B LED can be independently controlled, the Vcom signals of R LED, G LED and B LED can be independently set according to the needs, and the voltage or current provided by the DMOS backplane can be reasonably utilized.
  • each group includes a plurality of first electrodes, and at least one first electrode in each group is electrically connected to a different first conductive part. This can control the subdivision of the first electrode in each group, further reduce the IR drop problem caused by large current, and effectively reduce power consumption.
  • At least one first electrode in each of the above groups is electrically connected to a different first conductive part means: each first electrode in each of the above groups is electrically connected to a first conductive part; or, one first electrode in each of the above groups is electrically connected. One electrode is electrically connected to one first conductive part, and the remaining first electrodes are electrically connected to one conductive part; or, a plurality of first electrodes in each of the above groups are electrically connected to one first conductive part, and the other first electrodes are electrically connected to one The conductive part is electrically connected and is not specifically limited here.
  • all first electrodes in each group are electrically connected to one first conductive part. Therefore, the first electrodes can be controlled in groups, which is easy to manufacture and easy to implement.
  • the light-emitting panel includes at least three light-emitting devices with different colors, and each light-emitting device with different colors forms a group. Therefore, it is possible to perform the same control on the light-emitting devices of the same color, and to perform different controls on the light-emitting devices of different colors, thereby controlling the light emission of the light-emitting panel more effectively and at the same time, it is simple and easy to implement.
  • the light-emitting panel may include at least any three of red light-emitting devices, green light-emitting devices, blue light-emitting devices, yellow light-emitting devices, and so on.
  • each group includes at least three light-emitting devices with different colors, and each light-emitting device with different colors is electrically connected to a different first conductive part. Therefore, on the basis of grouping the light-emitting devices, the light-emitting devices of different colors in each group can also be controlled, thereby achieving more precise light-emitting control, further reducing the IR drop problem caused by large current, and further reducing the power consumption. Consumption.
  • each of the above groups including at least three light-emitting devices with different colors.
  • each of the above groups may include light-emitting devices of any three colors including red, green, blue, yellow, etc.
  • the light-emitting panel at least includes a red light-emitting device, a blue light-emitting device and a green light-emitting device.
  • the red light-emitting device is electrically connected to a first conductive part
  • the green light-emitting device is electrically connected to a first conductive part
  • the blue light-emitting device is electrically connected to a first conductive part.
  • a first conductive part is electrically connected.
  • the red light-emitting device, the blue light-emitting device and the green light-emitting device can be controlled separately, so that while reducing the IR drop problem caused by large current and reducing power consumption, it can also control the light-emitting effects of various colors, and then Improve the luminescence of light-emitting panels.
  • red light-emitting devices there are no specific limitations on the number, structure, etc. of the above-mentioned red light-emitting devices, blue light-emitting devices, and green light-emitting devices.
  • the number of the above-mentioned red light-emitting devices, blue light-emitting devices and green light-emitting devices may be one or more.
  • the above-mentioned red light-emitting device may include a light-emitting layer that emits red light
  • the above-mentioned blue light-emitting device may include a light-emitting layer that emits blue light
  • the above-mentioned green light-emitting device may include a light-emitting layer that emits green light
  • the above-mentioned red light-emitting device may include A blue light emitting layer and a quantum dot layer located on the light emitting layer.
  • the above blue light emitting device may include a blue light emitting layer.
  • the above green light emitting device may include a blue light emitting layer and a quantum dot layer located on the light emitting layer.
  • the red light-emitting device is electrically connected to a first conductive part.
  • the above-mentioned red light-emitting device may be directly electrically connected to a first conductive part; or the above-mentioned red light-emitting device may be directly electrically connected to a first conductive part through other structures.
  • the way in which the blue light-emitting device and the green light-emitting device are electrically connected to the first conductive part can refer to the way in which the red light-emitting device is electrically connected to the first conductive part, which will not be described again here.
  • the driving substrate also includes a second conductive portion 8 disposed between the light-emitting device and the driving unit 2, and the light-emitting device is electrically connected to the driving unit 2 through the second conductive portion 8;
  • the second conductive part 8 is insulated from the first conductive part 1 .
  • At least one of the plurality of first conductive parts 1 and the second conductive part 8 are arranged in the same layer.
  • the material of the above-mentioned second conductive part is not specifically limited here.
  • the material of the second conductive part may include metal, such as copper (Cu), tin (Sn), silver (Ag), gold (Au), indium (In), and so on.
  • At least one first conductive part and a second conductive part among the plurality of first conductive parts are arranged in the same layer. This means that one first conductive part and a second conductive part are arranged in the same layer, and the remaining first conductive parts are not conductive with the second conductive part. parts are arranged on the same layer; or a plurality of first conductive parts and the second conductive parts are arranged on the same layer, and the remaining first conductive parts are not arranged on the same layer as the second conductive parts; or all the first conductive parts are arranged on the same layer as the second conductive parts.
  • Layer settings. Both FIG. 1 and FIG. 2 illustrate an example in which all the first conductive parts 1 and the second conductive parts 8 are arranged in the same layer.
  • the first conductive part may be arranged on the same layer as the driving unit; or, the first conductive part may be arranged on the same layer as the driving unit and the second conductive part. Arrangement in the same layer is sufficient as long as the first conductive part can be electrically connected to the first electrode.
  • the second conductive part in the embodiment of the present application may be a top metal layer, so that the number of via holes electrically connecting the first conductive part and the first electrode can be reduced, which facilitates process manufacturing and saves time and cost.
  • the material of the top metal layer is generally copper (Cu), and the square resistance is 0.002 ohms/square.
  • IZO Indium Zinc Oxide, indium zinc oxide
  • square resistance 60 ohms/square reducing the voltage drop by at least 30,000 times.
  • At least one first conductive part among the plurality of first conductive parts is arranged on the same layer as the driving unit.
  • At least one first conductive part among the plurality of first conductive parts is arranged on the same layer as the driving unit means: one first conductive part is arranged on the same layer as the driving unit, and the remaining first conductive parts are not arranged on the same layer as the driving unit; or , the plurality of first conductive parts are arranged on the same layer as the driving unit, and the remaining first conductive parts are not arranged on the same layer as the driving unit; or, all the first conductive parts are arranged on the same layer as the driving unit.
  • the first conductive part may be disposed on the same layer as the second conductive part; or, the first conductive part may be disposed on the same layer as the driving unit and the second conductive part. Arrangement in the same layer is sufficient as long as the first conductive part can be electrically connected to the first electrode. In the case where the first conductive part is arranged on the same layer as the driving unit, the first conductive part can be arranged on the same layer as any film layer in the driving unit, for example, on the same layer as the gate electrode layer in the driving unit, as long as the first electrode It only needs to be electrically connected to the first conductive part through the via hole, which is not specifically limited here.
  • At least one first conductive part among the plurality of first conductive parts may be disposed in the same layer as any film layer in the driving unit.
  • all the first conductive parts are arranged in the same layer as the same film layer in the driving unit; or each first conductive part is arranged in the same layer as one film layer in the driving unit, and each first conductive part is in a different layer; or, part of The first conductive part and a film layer in the driving unit are arranged on the same layer, and part of the first conductive part is arranged on the same layer, etc., which are not specifically limited here.
  • all first conductive parts 1 and the second conductive part 8 among the plurality of first conductive parts 1 are arranged in the same layer, all first conductive parts 1 and The second conductive parts 8 are arranged on the same layer. Therefore, all the first conductive parts and the second conductive part as the top metal layer can be arranged in the same layer, so that all the first conductive parts can be electrically connected to the first electrode through fewer via holes, simplifying the production to the greatest extent. process, reducing costs.
  • the light-emitting device includes a light-emitting unit.
  • the light-emitting unit includes a side surface, an opposite first surface and a second surface.
  • the first surface and the second surface are respectively connected to the side surface, and the second surface is located on a side of the light-emitting unit away from the driving backplane. .
  • the light-emitting device also includes an insulating portion 36 and an auxiliary electrode 37.
  • the insulating portion 36 covers at least one side of the light-emitting unit; the auxiliary electrode 37 is at least located on the side of the insulating portion 36 away from the light-emitting unit and is in contact with the light-emitting unit. Unit electrical connections. Therefore, the first electrode can be electrically connected to the first conductive part through the auxiliary electrode, which is simple and easy to implement.
  • the light-emitting unit may include a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit as shown in FIGS. 1 and 2 .
  • the light-emitting unit may include a second electrode, an epitaxial wafer, and a first electrode that are stacked in sequence.
  • the above-mentioned insulating part covering at least one side of the light-emitting unit means that: as shown in FIGS. 1 and 2 , the insulating part 36 only covers one side of the light-emitting unit; or, the insulating part 36 can also cover all sides of the light-emitting unit, which is not the case here. Make specific limitations.
  • the material of the above-mentioned insulating part is not specifically limited.
  • the material of the insulating part may be any one or a combination of silicon nitride, silicon oxide, or silicon oxynitride.
  • the above-mentioned auxiliary electrode is located at least on a side of the insulating portion away from the light-emitting unit and is electrically connected to the light-emitting unit.
  • the auxiliary electrode is located at least on the side of the insulating part away from the light-emitting unit. It means that the insulating part 36 only covers one side of the light-emitting unit as shown in Figures 1 and 2. In this case, only one side of the light-emitting unit is provided with the auxiliary electrode. 37.
  • the first electrode 31 is electrically connected to the first conductive part 1 through the auxiliary electrode 37; alternatively, the insulating part can also cover all sides of the light-emitting unit.
  • an auxiliary electrode is provided on all sides away from the light-emitting unit.
  • the first electrode may be electrically connected to the first conductive part through a plurality of auxiliary electrodes.
  • the electrical connection between the auxiliary electrode and the light-emitting unit means that the auxiliary electrode overlaps with the first electrode in the light-emitting unit.
  • the auxiliary electrode may overlap with part of the first electrode; or the auxiliary electrode may overlap with the entire first electrode, which is not specifically limited here.
  • the material of the above-mentioned auxiliary electrode is not specifically limited.
  • the material of the above-mentioned auxiliary electrode can be metal, and further can be reflective metal, such as silver (Ag), aluminum (Al), etc., and of course can also be composite material, such as IZO+reflective metal, etc.
  • the auxiliary electrode can also reflect light, thereby improving light utilization.
  • the insulating part covers all sides of the light-emitting unit; the auxiliary electrode is located on a side of the insulating part away from the light-emitting unit and covers at least part of the second surface of the light-emitting unit. Therefore, if there is a problem such as poor contact between a certain auxiliary electrode and the first conductive part, the electrical connection between the first electrode and the first conductive part in the light-emitting unit will not be affected, and transmission to the light-emitting unit through the first conductive part can still be achieved. Vcom signal function.
  • the above-mentioned auxiliary electrode covers part of the second surface of the light-emitting unit and is in partial contact with the first electrode; or the above-mentioned auxiliary electrode covers the entire second surface of the light-emitting unit, In contact with the entire first electrode, there is no specific limitation here.
  • FIG. 1 and FIG. 2 illustrate an example in which the insulating portion 36 only covers one side of the light-emitting unit and the auxiliary electrode 37 covers part of the second surface of the light-emitting unit.
  • the light-emitting unit includes a second electrode, an epitaxial wafer and a first electrode that are stacked on the driving backplane in sequence.
  • the auxiliary electrode is electrically connected to the first electrode and covers at least part of the first electrode. Therefore, the first electrode can be electrically connected to the first conductive part through the auxiliary electrode, so that the Vcom signal is input to the first electrode through the first conductive part.
  • the epitaxial wafer may include a hole injection layer, a light emitting layer and an electron injection layer that are stacked in sequence; or the epitaxial wafer may include an electron injection layer, a light emitting layer and a hole injection layer that are stacked in sequence.
  • FIG. 1 and FIG. 2 illustrate that the red epitaxial wafer includes a first hole injection layer 33 , a first light emitting layer 34 and a first electron injection layer 35 stacked in sequence as an example.
  • the above-mentioned light-emitting layer is the light-emitting area of the epitaxial wafer and can constrain carriers.
  • the material of the light-emitting layer is not specifically limited here.
  • the material of the light-emitting layer may include multiple quantum wells.
  • the above-mentioned electron injection layer can be used to provide electrons and can serve as the N region of the light-emitting layer.
  • the material of the electron injection layer is not specifically limited here.
  • the material of the electron injection layer may include any one of gallium nitride (GaN), gallium phosphide (GaP), or zinc oxide (ZnO).
  • the above-mentioned hole injection layer can be used to provide holes and can serve as the P region of the light-emitting layer.
  • the material of the hole injection layer is not specifically limited here.
  • the material of the hole injection layer may include any one of gallium nitride (GaN), gallium phosphide (GaP), or zinc oxide (ZnO).
  • the above-mentioned luminescent layer may also include other film layers.
  • the luminescent layer may include an electron blocking layer disposed on the side of the luminescent layer away from the electron injection layer, which may be used to block electrons from leaking into the P region of the luminescent layer and increase the electron content in the luminescent recombination region. and hole recombination rate.
  • the above-mentioned auxiliary electrode covering at least part of the first electrode means that the above-mentioned auxiliary electrode covers part of the first electrode; or the above-mentioned auxiliary electrode covers the entire first electrode, which is not specifically limited here.
  • the light emitting device further includes a reflective layer disposed between the driving backplane and the second electrode.
  • a reflective layer disposed between the driving backplane and the second electrode.
  • the reflective layer may include an aluminum metal layer and a protective layer, wherein the protective layer is located between the aluminum metal layer and the driving backplane, both the aluminum metal layer and the protective layer have conductivity, and the aluminum metal layer has good electrical conductivity.
  • the reflective effect can reflect the light emitted from the luminescent layer toward the reflective layer, improve the light extraction rate of the luminescent panel, improve the use efficiency of the light emitted by the luminescent layer, improve the display effect, and reduce power consumption.
  • the above-mentioned reflective layer may be conductive, or the second electrode in the light-emitting device may be made of a reflective material, that is, the second electrode may also be configured to have a reflective function.
  • the driving substrate includes a first substrate, a plurality of first conductive parts and a plurality of driving units arranged in an array are arranged on the first substrate; the first substrate is a silicon substrate.
  • the driving substrate may include silicon elements, such as polycrystalline silicon or monocrystalline silicon, and the driving substrate may also be referred to as a silicon substrate or a silicon-based backplane.
  • the driving unit provided by some embodiments of the present application can use silicon-based transistors without compensating the threshold voltage.
  • the structure of the driving unit is simple, the volume of a single silicon-based transistor is reduced, and the area of the driving unit can be greatly reduced. , thereby greatly increasing the pixel density of the light-emitting panel.
  • An embodiment of the present application also provides a light-emitting device, including the above-mentioned light-emitting panel.
  • the light-emitting device may be used as a backlight device, or may also be used as a display device.
  • the light-emitting device may be a Mini-LED light-emitting device; or, the light-emitting device may also be a Micro-LED light-emitting device.
  • each second electrode of the light-emitting device is electrically connected to a driving unit, and the first electrode is electrically connected to the first conductive part; at least one connection point between the first electrode and the first conductive part is electrically connected, It is different from the connection point where the remaining first electrodes and the first conductive part are electrically connected except the first electrode and the first conductive part.
  • at least one first electrode since at least one first electrode is no longer electrically connected to other first electrodes, at least one first electrode can be independently controlled by the voltage on the first conductive part, thereby effectively reducing the light-emitting surface of the light-emitting device.
  • the transparent first electrode has a serious IR drop problem caused by the large square resistance of the transparent first electrode; on the other hand, since at least one first electrode can be independently controlled by the voltage on the first conductive part, that is, at least one first electrode
  • the electrodes are independently patterned, so that at least one first electrode can be individually dynamically adjusted and controlled to reduce power consumption.
  • the embodiment of the present application further provides a method for preparing the above-mentioned light-emitting panel.
  • the method includes:
  • the driving substrate includes a plurality of first conductive parts and a plurality of driving units arranged in an array, and the first conductive parts are insulated from the driving units; a plurality of light emitting device arrays are arranged on the driving substrate, and the light emitting device includes a first electrode and a third Two electrodes, each second electrode is electrically connected to a driving unit, the first electrode is electrically connected to the first conductive part; at least one connection point where the first electrode and the first conductive part are electrically connected is connected to the first electrode and the first conductive part. The remaining first electrodes other than the first conductive part are electrically connected to different connection points.
  • the order of forming the driving substrate and forming the plurality of light emitting devices is not specifically limited.
  • the driving substrate can be formed first, and then the plurality of light-emitting devices can be formed; or the driving substrate and the plurality of light-emitting devices can be formed at the same time; or the plurality of light-emitting devices can be formed first, and then the driving substrate can be formed.
  • the light-emitting panel prepared by the preparation method provided in the embodiments of the present application may also include other structures and components.
  • At least one first electrode can be independently controlled by the voltage on the first conductive part, thereby effectively reducing the light-emitting surface of the light-emitting device. If a transparent first electrode is used, and the transparent first electrode Serious IR drop problem caused by large square resistance; on the other hand, since at least one first electrode can be independently controlled by the voltage on the first conductive part, that is, at least one first electrode is independently patterned, so that at least one can be independently patterned A first electrode performs dynamic adjustment control to reduce power consumption.
  • the epitaxial wafer includes a first electron injection layer 35, a light emitting layer 34 and a first hole injection layer 33 which are stacked in sequence.
  • the material of the second substrate is not specifically limited here.
  • the material of the second substrate may include either silicon or silicon carbide.
  • the driving substrate includes a first substrate 11 and a bonding metal 38 provided on the first substrate.
  • the above driving substrate may be a CMOS backplane.
  • the above bonding process may adopt eutectic bonding or thermocompression bonding.
  • the above-mentioned bonding temperature range may include 100-400°C.
  • the above-mentioned bonding temperature may be 100°C, 200°C, 300°C, or 400°C, etc.
  • the materials of the above-mentioned second electrode and bonding metal are not specifically limited here.
  • the materials of the second electrode and the bonding metal may both include metals, such as copper (Cu), tin (Sn), silver (Ag), gold (Au), indium (In), and so on.
  • the material of the second electrode can be bonded with a material that is a bonding metal, such as Cu-Sn, Sn-Ag, Sn-In, Sn-Au, Au-In, Cu-In, etc., where Cu- Sn means that if the material of the second electrode is Cu and the material of the bonding metal is Sn, the two can be bonded; or, if the material of the second electrode is Sn and the material of the bonding metal is Cu, the two can be bonded. Bonding occurs.
  • a bonding metal such as Cu-Sn, Sn-Ag, Sn-In, Sn-Au, Au-In, Cu-In, etc.
  • the above-mentioned second substrate can be removed according to circumstances. If the above-mentioned second substrate is a silicon substrate, it can be removed using a wet etching process or a dry etching process.
  • the light-emitting device can be immersed in hydrofluoric acid (HF) to remove the second substrate.
  • HF hydrofluoric acid
  • the second substrate does not need to be removed, as long as the epitaxial wafer can be patterned.
  • the above patterning process is not specifically limited here.
  • a dry etching process can be used to pattern the epitaxial wafer.
  • the bonding metal 38 is patterned to form a plurality of second electrodes 32.
  • the above patterning process is not specifically limited here.
  • a wet etching process or a dry etching process may be used to pattern the second electrode.
  • the material of the above-mentioned first electrode may include metal, etc., such as: ITO (Indium Tin Oxides, indium tin oxide), chromium/platinum/gold, titanium/gold , titanium/silver/indium tin oxide (Ti/Ag/ITO), etc.
  • ITO Indium Tin Oxides, indium tin oxide
  • chromium/platinum/gold titanium/gold
  • titanium/silver/indium tin oxide Ti/Ag/ITO
  • the material of the above-mentioned insulating part is not specifically limited.
  • the material of the insulating part may be any one or a combination of silicon nitride, silicon oxide, or silicon oxynitride.
  • insulating portions may also be formed on all sides of each light-emitting unit.
  • an auxiliary electrode 37 is formed on the side of the insulating portion 36 of each light-emitting unit away from the light-emitting unit.
  • the material of the above-mentioned auxiliary electrode is not specifically limited.
  • the material of the above-mentioned auxiliary electrode can be metal, and further can be reflective metal, such as silver (Ag), aluminum (Al), etc., and of course can also be composite material, such as IZO+reflective metal, etc.
  • auxiliary electrodes may also be provided on the side of the insulating portion on all sides of each light-emitting unit away from the light-emitting unit.
  • the bonding process of the light-emitting device is described here by taking the light-emitting device including three light-emitting units as an example. When the number of light-emitting units is different, the bonding process is similar to the previous one and will not be described again here.
  • the three light-emitting units formed here emit light of the same color. If the color of the light emitted by the light-emitting units is inconsistent, for example, when the light-emitting layer is a blue light-emitting layer, the structure of one of the light-emitting units can be added without changing the structure of one of the light-emitting units, and a quantum dot layer can be added to the other two light-emitting units. For example, the quantum dot layer On the side of the first electrode away from the second electrode, the other two light-emitting units can be made to emit red light and green light respectively.
  • the embodiments of this application only introduce the bonding process of the light-emitting unit in the light-emitting device related to the invention.
  • the preparation methods of other film layers and components included in the light-emitting device can refer to related technologies, and will not be described again here.

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Abstract

本申请提供了一种发光面板及其制备方法、发光装置，涉及显示技术领域，该发光面板包括：驱动基板，所述驱动基板包括多个第一导电部和阵列排布的多个驱动单元，所述第一导电部与所述驱动单元绝缘；多个发光器件，阵列排布在所述驱动基板上，所述发光器件包括第一电极和第二电极，各所述第二电极和一个所述驱动单元电连接，所述第一电极和所述第一导电部电连接；至少一个所述第一电极和所述第一导电部电连接的连接点，与除所述第一电极和所述第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。本申请提供的发光面板通过至少一个第一电极可以被第一导电部上的电压单独控制，从而可以减小IRdrop，并降低功耗。

Description

一种发光面板及其制备方法、发光装置 技术领域
本申请涉及显示技术领域，尤其涉及一种发光面板及其制备方法、发光装置。
背景技术
微型发光二极管(Micro Light Emitting Diode，简称Micro LED)和次毫米发光二极管(Mini Light Emitting Diode，简称Mini LED)是近年来LED(Light Emitting Diode，发光二极管)技术发展的主力，Micro/Mini LED发光芯片可广泛应用到液晶显示器背光源、Micro/Mini RGB显示屏、小间距显示屏等领域。
目前Micro/Mini LED发光芯片需要较大的电流才能实现较好的发光效率，但是大电流会给Micro/Mini LED发光芯片带来很多问题。因此，亟需一种新型的发光芯片，以解决大电流带来的问题。
发明内容
本申请的实施例采用如下技术方案：
一方面，本申请的实施例提供了一种发光面板，包括：
驱动基板，所述驱动基板包括多个第一导电部和阵列排布的多个驱动单元，所述第一导电部与所述驱动单元绝缘；
多个发光器件，阵列排布在所述驱动基板上，所述发光器件包括第一电极和第二电极，各所述第二电极和一个所述驱动单元电连接，所述第一电极和所述第一导电部电连接；至少一个所述第一电极和所述第一导电部电连接的连接点，与除所述第一电极和所述第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。
可选地，所有所述第一电极分为多组，各组包括至少一个所述第一电极、且各组与不同的所述第一导电部电连接。
可选地，各组包括一个所述第一电极，各所述第一电极与一个所述第一导电部电连接。
可选地，各组包括多个所述第一电极，各组内的至少一个所述第一电极与不同的所述第一导电部电连接。
可选地，各组内的所有所述第一电极与一个所述第一导电部电连接。
可选地，各组至少包括三个颜色不同的所述发光器件，每一种颜色不同的所述发光器件分别与不同的所述第一导电部电连接。
可选地，所述发光面板至少包括红色发光器件、蓝色发光器件和绿色发光器件，所述红色发光器件与一个所述第一导电部电连接，所述绿色发光器件与一个所述第一导电部电连接，所述蓝色发光器件与一个所述第一导电部电连接。
可选地，所述驱动基板还包括设置在所述发光器件和所述驱动单元之间的第二导电部，所述发光器件通过所述第二导电部与所述驱动单元电连接；所述第二导电部与所述第一导电部绝缘；
多个所述第一导电部中的至少一个所述第一导电部与所述第二导电部同层设置；
或者，多个所述第一导电部中的至少一个所述第一导电部与所述驱动单元同层设置。
可选地，所述在多个所述第一导电部中的至少一个所述第一导电部与所述第二导电部同层设置的情况下，所有所述第一导电部与所述第二导电部同层设置。
可选地，所述发光器件包括发光单元，所述发光单元包括侧面、相对的第一表面和第二表面，所述第一表面和所述第二表面分别与所述侧面相连，所述第二表面位于所述发光单元远离所述驱动背板的一侧；
所述发光器件还包括绝缘部和辅助电极，所述绝缘部覆盖所述发光单元的至少一个侧面；所述辅助电极至少位于所述绝缘部远离所述发光单元的一侧、且与所述发光单元电连接。
可选地，所述绝缘部覆盖所述发光单元的所有所述侧面；
所述辅助电极位于所述绝缘部远离所述发光单元的一侧、以及至少覆盖部分所述发光单元的所述第二表面。
可选地，所述发光单元包括依次层叠设置在所述驱动背板上的所述第二电极、外延片和所述第一电极，所述辅助电极与所述第一电极电连接、且至少覆盖部分所述第一电极。
可选地，所述发光器件还包括设置在所述驱动背板和所述第二电极之间的反射层。
可选地，所述驱动基板包括第一衬底，所述多个所述第一导电部和所述阵列排布的多个所述驱动单元均设置在所述第一衬底上；
所述第一衬底为硅基板。
另一方面，本申请的实施例提供了一种发光装置，包括上述的发光面板。
又一方面，本申请的实施例提供了一种上述发光面板的制备方法，所述方法包括：
形成驱动基板和多个发光器件；其中，所述驱动基板包括多个第一导电部和阵列排布的多个驱动单元，所述第一导电部与所述驱动单元绝缘；多个所述发光器件阵列排布在所述驱动基板上，所述发光器件包括第一电极和第二电极，各所述第二电极和一个所述驱动单元电连接，所述第一电极和所述第一导电部电连接；至少一个所述第一电极和所述第一导电部电连接的连接点，与除所述第一电极和所述第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，而可依照说明书的内容予以实施，并且为了让本申请的上述和其它目的、特征和优点能够更明显易懂，以下特举本申请的具体实施方式。
附图说明
为了更清楚地说明本申请实施例或相关技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本申请实施例提供的一种发光面板的结构示意图；
图2为本申请实施例提供的另一种发光面板的结构示意图；
图3为本申请实施例提供的一种驱动单元的结构示意图；
图4为本申请实施例提供的另一种驱动单元的结构示意图；
图5为本申请实施例提供的相关技术中发光效率随电流密度变化的示意图；
图6为本申请实施例提供的一种区域显示示意图；
图7至图13为本申请实施例提供的图1所示结构的制备工艺流程图。
具体实施例
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在图中，为了清晰，可能夸大了区域和层的厚度。在图中相同的附图标记表示相同或类似的结构，因而将省略它们的详细描述。此外，附图仅为本申请的示意性图解，并非一定是按比例绘制。
在本申请的实施例中，除非另有说明，“多个”的含义是两个或两个以上；术语“上”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的结构或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例”、“一些实施例”、“示例性实施例”、“示例”、“特定示例”或“一些示例”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本申请的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
在本申请的实施例中，采用“第一”、“第二”等字样对功能和作用基本相同的相同项或相似项进行区分，仅为了清楚描述本申请实施例的技术方案，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。
在本申请的实施例中，术语“电连接”可以是指两个组件直接电连接，也可以是指两个组件之间经由一个或多个其它组件电连接；“电连接”可以是指通过导线进行电连接，也可以是指通过无线电信号电连接。
本申请的实施例提供了一种发光面板，参考图1和图2所示，该发光面板包括：
驱动基板，驱动基板包括多个第一导电部1和阵列排布的多个驱动单元2，第一导电部1与驱动单元2绝缘。
多个发光器件，阵列排布在驱动基板上，发光器件包括第一电极31和第二电极32，各第二电极32和一个驱动单元2电连接，第一电极31和第一导电部1电连接；至少一个第一电极31和第一导电部1电连接的连接点，与除第一电极31和第一导电部1以外的其余第一电极31和第一导电部1电连接的连接点不同。
对于上述驱动基板的类型不做具体限定。示例的，上述驱动基板可以采用成熟的集成电路CMOS(Complementary Metal Oxide Semiconductor，互补金属氧化物半导体)工艺制成，该CMOS驱动基板可以实现像素的有源寻址，包括TCON(Timer Control Register，计数器控制寄存器)、OCP(Over Current Protection，过流保护)等多种电路，能够实现轻量化。当然，上述驱动基板还可以是其它类型的驱动背板。本申请实施例均以驱动基板为CMOS驱动背板为例进行说明。
对于上述驱动基板的结构不做具体限定。示例的，上述驱动基板可以包括驱动单元、绝缘层、导电层等等结构。这里对于绝缘层的材料、层数等均不做具体限定，示例的，绝缘层的材料可以为氮化硅、氧化硅或者氮氧化硅中的任意一种或者多种的组合；示例的，绝缘层可以为一层，当然也可以为多层，绝缘层的层数可以依据导电层的层数确定，只要使得相邻导电层之间具有至少一层绝缘层即可。这里对于导电层的材料、层数等均不做具体限定，示例的，导电层的材料可以为金属等；示例的，导电层可以为一层，当然也可以为多层，导电层的层数可以依据驱动基板的功能确定。图1以驱动单元2和发光器件之间包括一层导电层13和两层绝缘层23为例进行绘示。图2以驱动基板包括多层绝缘层12和多层导电层13、且相邻导电层13之间设置有一层绝缘层12为例进行绘示。
需要说明的是，参考图2所示，每一层导电层13可以包括至少一个导电单元6，该导电单元6被配置为能够实现特定的功能。具体可以参考相关技术获取每一层导电层中导电单元的用途，这里仅介绍与发明点相关的内容，不再详细说明。参考图2所示，每一层绝缘层12上可以包括至少一个过孔7，从而使得绝缘层12两侧需要电连接的导电单元6可以通过该过孔7实现电连接。
这里对于上述第一导电部的材料、结构等均不做具体限定。示例的，上 述第一导电部的材料可以为金属，例如：钨。示例的，上述第一导电部可以包括公共电极线(Vcom线)，从而可以通过Vcom线向发光器件传输公共电压，当然第一导电部不限于向发光器件传输的是Vcom信号。本申请实施例均以第一导电部向发光器件传输Vcom信号为例进行说明。
这里对于上述驱动单元的结构不做具体限定。示例的，上述驱动单元可以包括两个晶体管和一个电容器(2T1C)；或者，上述驱动单元可以包括四个晶体管和一个电容器(4T1C)；或者，上述驱动单元可以包括五个晶体管和一个电容器(5T1C)。本申请中驱动单元的实施例并不限于此，在其它实施例中，驱动单元还可以包括更多的晶体管、更多的电容器，或者还可以包括电阻器(R)以及其它更多的电子器件，具体可以根据硅基背板中的驱动像素电路的设计确定，这里不进行限制。结合图2至图3可知，本申请实施例提供的驱动单元2可以包括电容C、开关晶体管T1和驱动晶体管T4，其中电容C的一端51与开关晶体管T1电连接、电容C的另一端52与驱动晶体管T4电连接，此时图3所示的是电流型的驱动单元。图3以驱动单元为两行三列为例进行绘示。参考图3所示，栅线Gate和数据线Data构成了两行三列的驱动单元，第一列为驱动红色(R)发光器件的驱动单元、第二列为驱动蓝色(B)发光器件的驱动单元、第三列的驱动单元为驱动绿色(G)发光器件的驱动单元，各驱动单元的发光器件的一端均传输有Vcom信号，且各驱动单元的开关晶体管T1的一端均传输有电源信号VDD。
当然，驱动单元还可以是如图4所示的电压型的驱动单元。参考图4所示，图4和图3的区别在于图3中的电容C的一端与驱动晶体管T4电连接，而图4中的电容C的一端接地。
需要说明的是，在示例性的实施例中，驱动基板还可以至少包括顶金属层(Top metal)，顶金属层可以包括多个第二导电部8。
在示例性的实施例中，参考图2所示，驱动晶体管T4包括在第一衬底11上形成的深肼层21、有源层22、导体化层23、源漏金属层和栅极层。其中，源漏金属层包括多个源极24和多个漏极25，栅极层包括多个栅极25。
另外，这里对于上述驱动单元中的晶体管的类型不进行限定。示例性的，晶体管可以包括N型晶体管；或者，晶体管可以包括P型晶体管；或者，晶体管可以同时包括N型晶体管和P型晶体管。
在本申请的实施例中，驱动单元可以理解为像素驱动电路。
这里对于上述发光器件的类型、结构、颜色等均不做具体限定。示例的， 该发光器件可以包括Micro LED芯片；或者，该发光器件还可以包括Mini LED芯片。示例的，上述发光器件可以包括两个电极和外延片，其中外延片一般包括依次层叠设置的电流注入层、发光层和空穴注入层。示例的，上述多个发光器件可以均发出相同颜色的光线；或者，上述多个发光器件可以均发出不同颜色的光线；或者，上述多个发光器件中的部分发光器件可以发出同颜色的光线。图1和图2均以发光器件包括红色发光器件3、绿色发光器件4和蓝色发光器件5为例进行绘示。
这里对于相邻发光器件之间的间距不做具体限定。示例的，在单个发光器件的尺寸范围小于50μm的情况下，相邻发光器件之间的间距包括5μm-100μm，优选为10μm-30μm。
这里对于上述第一电极的材料不做具体限定，示例的，上述第一电极的材料可以包括金属等，例如：ITO(Indium Tin Oxides，铟锡氧化物)、铬/铂/金、钛/金、钛/银/氧化铟锡(Ti/Ag/ITO)等。
这里对于上述第二电极的材料不做具体限定。示例的，第二电极的材料可以包括金属，例如：铜(Cu)、锡(Sn)、银(Ag)、金(Au)、铟(In)等等。该第二电极的材料可以和第二导电部的材料发生键合，例如发生Cu-Sn、Sn-Ag、Sn-In、Sn-Au、Au-In、Cu-In等键合，其中，Cu-Sn代表若第二电极的材料为Cu、第二导电部的材料为Sn时，二者可以发生键合；或者，若第二电极的材料为Sn、第二导电部的材料为Cu时，二者可以发生键合。
这里对于上述第一电极和第二电极的极性不做具体限定，示例的，上述第一电极可以为N型电极，此时第二电极可以为P型电极；或者，上述第一电极可以为P型电极，此时第一电极可以为N型电极。图1至图2均以一个发光器件包括一个第一电极31、且该第一电极31为N型电极，一个第二电极32、且该第二电极32为P型电极为例进行绘示。
上述各第二电极和一个驱动单元电连接，这里对于第二电极和驱动单元电连接的方式不做具体限定。示例的，第二电极和驱动单元可以直接电连接；或者，第二电极和驱动单元可以通过其它结构电连接。图1和图2均以第二电极通过第二导电部8和驱动单元2电连接为例进行绘示。
上述第一电极和第一导电部电连接，这里对于第一电极和第一导电部电连接的方式不做具体限定。示例的，第一电极和第一导电部可以直接电连接；或者，第一电极和第一导电部可以通过其它结构电连接。图1和图2均以第一电极31通过辅助电极37和第一导电部1电连接为例进行绘示。
上述至少一个第一电极和第一导电部电连接的连接点，与除第一电极和第一导电部以外的其余第一电极和第一导电部电连接的连接点不同是指：可以是每一个第一电极均与一个第一导电部电连接，即所有的第一电极和第一导电部的连接点均不同；或者，可以是一部分第一电极和一个第一导电部电连接、另一部分第一电极和另一个第一导电部电连接，即一部分第一电极和第一导电部电连接的连接点相同、且与另一部分第一电极和第一导电部电连接的连接点不同；或者，可以是一部分第一电极和一个第一导电部电连接，另一部分中每一个第一电极和一个第一导电部电连接。当然不限于上述情况，还可以根据实际需要为其它情形，这里不再赘述。图1和图2均以各第一电极31与一个第一导电部1电连接为例进行绘示。
目前的硅(驱动)基板+Micro/Mini LED发光芯片微显示技术与半导体工艺兼容，适宜于大批量生产。相比于其它微显示技术，硅基板+LED技术具有不需要背光源、整体比较轻薄、光学系统设计简单、响应速度快等优点；相比于OLED微显示技术，硅基板+LED微显示技术采用半导体及金属材料，具有亮度高、耐高温、寿命长等优点，因此得到了广泛的研究。然而，目前的硅基板+LED需要较大的电流才能实现较高的发光效率。参考图5所示，当电流密度到达10A/cm2及以上时，效率显著提升。而硅基板+LED通常所用的效率区的电流密度的单元也达到了A/cm2的量级。但是，大电流会给硅基板+LED显示带了很多缺陷，例如IR drop(压降)较大、功耗上升等问题。
为了解决上述问题，本申请实施例提供了一种发光面板，包括：驱动基板，驱动基板包括多个第一导电部和阵列排布的多个驱动单元，第一导电部与驱动单元绝缘；多个发光器件，阵列排布在驱动基板上，发光器件包括第一电极和第二电极，各第二电极和一个驱动单元电连接，第一电极和第一导电部电连接；至少一个第一电极和第一导电部电连接的连接点，与除第一电极和第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。这样一方面，由于至少一个第一电极与其它第一电极不再电连接，使得至少一个第一电极可以被第一导电部上的电压单独控制，从而有效的减小了发光器件出光面如果使用透明第一电极，而透明第一电极方阻较大带来的严重的IR drop问题；另一方面，由于至少一个第一电极可以被第一导电部上的电压单独控制，即至少一个第一电极独立图形化，从而可以单独对至少一个第一电极进行动态调整控制，降低功耗。
可选地，所有第一电极分为多组，各组包括至少一个第一电极、且各组 与不同的第一导电部电连接。从而可以在减小大电流带来的IR drop问题、降低功耗的同时，还可以对第一电极进行分区域控制。
对于上述各组包括的第一电极的数量不做具体限定。示例的，上述各组可以仅包括一个第一电极；或者，上述各组可以包括多个第一电极。在上述各组包括多个第一电极的情况下，这里对于各组中多个第一电极电连接的第一导电部的数量不做具体限定。示例的，可以是各组中所有第一电极与一个第一导电部电连接；或者，可以是各组中多个第一电极与不同的第一导电部电连接。
下面以10个第一电极为例进行说明。
第一种情况：可以将10个第一电极分为10组，此时每一组均包括1个第一电极，每1个第一电极与1个第一导电部电连接，即具有10个第一导电部。
第二种情况：可以将10个第一电极分为3组，此时可以是第一组包括3个第一电极、第二组包括3个第一电极、第三组包括4个第一电极，那么第一组的3个第一电极与1个第一导电部电连接、第二组的3个第一电极与1个第一导电部电连接、第三组的4个第一电极与1个第一导电部电连接。
第三种情况：可以将10个第一电极分为3组，此时可以是第一组包括1个第一电极、第二组包括1个第一电极、第三组包括8个第一电极，那么第一组的1个第一电极与1个第一导电部电连接、第二组的1个第一电极与1个第一导电部电连接、第三组的8个第一电极与1个第一导电部电连接。
第四种情况：可以将10个第一电极分为3组，此时可以是第一组包括1个第一电极、第二组包括1个第一电极、第三组包括8个第一电极，那么第一组的1个第一电极与1个第一导电部电连接、第二组的1个第一电极与1个第一导电部电连接、第三组的8个第一电极中分别两个第一电极与1个第一导电部电连接。
需要说明的是，当然还可以包括除上述四种情况以外的其它情况，这里不再赘述。
硅(驱动)基板+Micro/Mini LED发光芯片可以应用在AR(Augmented Reality，增强现实)/VR(Virtual Reality，虚拟现实)等近眼显示中。在AR/VR等近眼显示中有一个很重要的应用场景是注视点渲染，即人眼注视的显示画面需要高清、高刷新率，人眼未注视的画面可以是低亮度、低刷新，如图6所示。参考图6所示，区域Z1为高清区，其它区域Z2为低清区。例 如图6中可以将屏幕划分为九个区域，每个区域的Vcom信号都单独控制，此时LED不需要较高的跨压，低清区的Vcom信号可以设置的较高；高清区的Vcom信号可以拉低，从而得到较大的跨压和高亮的显示。这对于功耗的降低和显示效果的提高都有很大的优势。
可选地，各组包括一个第一电极，各第一电极与一个第一导电部电连接。
下面以图1和图2所示的驱动基板包括红色发光器件3、绿色发光器件4和蓝色发光器件5，且各不同颜色的发光器件中的第一电极与一个第一导电部电连接为例进行说明。
表一给出了红色(R)发光二极管(LED)、绿色(G)发光二极管(LED)和蓝色(B)发光二极管(LED)的启亮电压(驱动电压Vcom)数值。由表一看出，R LED、G LED和B LED的启亮电压不一致，其中，R LED的驱动电压最低。相关技术中由于多个发光器件的阴极是整面设置并通过同一个驱动电压控制的，因此只能将Vcom设计为相同的值。为了保证对比度，只能将Vcom设置为R LED的驱动电压，例如-1.25V，这时为了得到更高的蓝光，就需要一个更大的数据电压，以提高B LED的跨压，这就导致增加了功耗。
表一
Figure PCTCN2022116247-appb-000001
表一中，7200μm^2代表R LED的尺寸，5916μm^2代表G LED的尺寸，5916μm^2代表B LED的尺寸。
本申请实施例提供的发光面板中各第一电极与一个第一导电部电连接，从而可以分别对每一个第一电极进行独立的控制，从而可以最大程度的减小大电流带来的IR drop问题，并最有效的降低功耗。参考图1和图2所示，红色发光器件3的第一电极31通过辅助电极37和过孔7与第一导电部1电连接，此时第一导电部1可以通入Vcom信号，同理，绿色发光器件4和蓝色发光器件5的第一电极也可以通入各自独立的Vcom信号，就可以将R LED、G LED和B LED的Vcom信号分别设定为不同的值。例如：R LED的起亮电压一般为1.7V，B LED的起亮电压一般为2V，因此R LED的Vcom信号可以设置为-1.7V，B LED的Vcom信号可以设置为-2V，从而可以节省 (0.38*I0*分辨率)的功耗。也即，当R LED、G LED和B LED的Vcom信号可以独立控制，就可以独立的根据需要设定R LED、G LED和B LED的Vcom信号，合理利用DMOS背板提供的电压或电流。
可选地，各组包括多个第一电极，各组内的至少一个第一电极与不同的第一导电部电连接。从而能够对各组内的第一电极再分情况进行控制，能够进一步减小大电流带来的IR drop问题，并有效的降低功耗。
上述各组内的至少一个第一电极与不同的第一导电部电连接是指：上述各组内的每一个第一电极与一个第一导电部电连接；或者，上述各组内的一个第一电极与一个第一导电部电连接、其余第一电极与一个导电部电连接；或者，上述各组内的多个第一电极分别与一个第一导电部电连接、其余第一电极与一个导电部电连接，这里不做具体限定。
可选地，各组内的所有第一电极与一个第一导电部电连接。从而能够分组对第一电极进行控制，便于制作，简单易实现。
可选地，发光面板至少包括三种颜色不同的发光器件，每一种颜色不同的发光器件构成一组。从而能够对同一种颜色的发光器件进行相同的控制、且对不同颜色的发光器件进行不同的控制，更有效的控制发光面板的发光的同时，还简单易实现。
这里对于上述发光面板包括的三种颜色不同的发光器件的颜色不做具体限定。示例的，发光面板可以至少包括红色发光器件、绿色发光器件、蓝色发光器件、黄色发光器件等等中的任意三种。
可选地，各组至少包括三个颜色不同的发光器件，每一种颜色不同的发光器件分别与不同的第一导电部电连接。从而在对发光器件进行分组的基础上，还可以对各组中不同颜色的发光器件进行控制，从而实现了更精确的发光控制，进一步减小大电流带来的IR drop问题，并进一步降低功耗。
这里对于上述各组至少包括三个颜色不同的发光器件的颜色不做具体限定。示例的，上述各组可以包括红色、绿色、蓝色、黄色等等中的任意三个颜色的发光器件。
可选地，发光面板至少包括红色发光器件、蓝色发光器件和绿色发光器件，红色发光器件与一个第一导电部电连接，绿色发光器件与一个第一导电部电连接，蓝色发光器件与一个第一导电部电连接。从而可以分别控制红色发光器件、蓝色发光器件和绿色发光器件，使得在减小大电流带来的IR drop问题，并能够降低功耗的同时，还可以控制各种不同颜色的发光效果，进而 提高发光面板的发光。
这里对于上述红色发光器件、蓝色发光器件和绿色发光器件的数量、结构等均不做具体限定。示例的，上述红色发光器件、蓝色发光器件和绿色发光器件的数量可以均为一个或者多个。示例的，上述红色发光器件可以包括发红光的发光层，上述蓝色发光器件可以包括发蓝光的发光层，上述绿色发光器件可以包括发绿光的发光层；或者，上述红色发光器件可以包括发蓝光的发光层和位于发光层上的量子点层，上述蓝色发光器件可以包括发蓝光的发光层，上述绿色发光器件可以包括发蓝光的发光层和位于发光层上的量子点层。
这里对于上述红色发光器件与一个第一导电部电连接的方式不做具体限定。示例的，上述红色发光器件可以与一个第一导电部直接电连接；或者，上述红色发光器件可以通过其它结构与一个第一导电部直接电连接。蓝色发光器件和绿色发光器件与第一导电部电连接的方式可以参考红色发光器件与第一导电部电连接的方式，这里不再赘述。
可选地，参考图1和图2所示，驱动基板还包括设置在发光器件和驱动单元2之间的第二导电部8，发光器件通过第二导电部8与驱动单元2电连接；第二导电部8与第一导电部1绝缘。
参考图1和图2所示，多个第一导电部1中的至少一个第一导电部1与第二导电部8同层设置。
这里对于上述第二导电部的材料不做具体限定。示例的，上述第二导电部的材料可以包括金属，例如：铜(Cu)、锡(Sn)、银(Ag)、金(Au)、铟(In)等等。
上述多个第一导电部中的至少一个第一导电部与第二导电部同层设置是指：一个第一导电部与第二导电部同层设置、其余第一导电部不与第二导电部同层设置；或者，多个第一导电部与第二导电部同层设置、其余第一导电部不与第二导电部同层设置；或者，所有第一导电部与第二导电部同层设置。图1和图2均以所有第一导电部1与第二导电部8同层设置为例进行绘示。在第一导电部不与第二导电部同层设置的情况下，第一导电部可以与驱动单元同层设置；或者，第一导电部可以与除驱动单元和第二导电部以外的其它结构同层设置，只要使得第一导电部能够与第一电极电连接即可。
本申请实施例中的第二导电部可以为顶金属层(Top metal)，从而可以使得第一导电部与第一电极电连接的过孔数量较少，便于工艺制作，节省时 间和成本。同时，由于使用顶金属层的金属层走金属走线，顶金属层的材料一般为铜(Cu)，方阻为0.002欧/方块，相比于IZO(Indium Zinc Oxide，氧化铟锌)(方阻60欧/方块)，减小了至少30000倍的压降。
或者，多个第一导电部中的至少一个第一导电部与驱动单元同层设置。
上述多个第一导电部中的至少一个第一导电部与驱动单元同层设置是指：一个第一导电部与驱动单元同层设置、其余第一导电部不与驱动单元同层设置；或者，多个第一导电部与驱动单元同层设置、其余第一导电部不与驱动单元同层设置；或者，所有第一导电部与驱动单元同层设置。在第一导电部不与驱动单元同层设置的情况下，第一导电部可以与第二导电部同层设置；或者，第一导电部可以与除驱动单元和第二导电部以外的其它结构同层设置，只要使得第一导电部能够与第一电极电连接即可。在第一导电部与驱动单元同层设置的情况下，第一导电部可以与驱动单元中的任意膜层同层设置，例如与驱动单元中的栅极层同层设置，只要使得第一电极能够通过过孔与第一导电部电连接即可，这里不做具体限定。
需要说明的是，当驱动单元包括多层结构时，多个第一导电部中的至少一个第一导电部可以与驱动单元中的任一膜层同层设置。例如：所有第一导电部与驱动单元中的同一膜层同层设置；或者，各第一导电部与驱动单元中的一个膜层同层设置、且各第一导电部不同层；或者，部分第一导电部与驱动单元中的一个膜层同层设置、且部分第一导电部同层设置等，这里不做具体限定。
可选地，参考图1和图2所示，在多个第一导电部1中的至少一个第一导电部1与第二导电部8同层设置的情况下，所有第一导电部1与第二导电部8同层设置。从而能够使得所有第一导电部与作为顶金属层的第二导电部同层设置，使得所有第一导电部均能与第一电极通过更少的过孔实现电连接，最大程度的简化了制作工艺，降低了成本。
可选地，发光器件包括发光单元，发光单元包括侧面、相对的第一表面和第二表面，第一表面和第二表面分别与侧面相连，第二表面位于发光单元远离驱动背板的一侧。
参考图1和图2所示，发光器件还包括绝缘部36和辅助电极37，绝缘部36覆盖发光单元的至少一个侧面；辅助电极37至少位于绝缘部36远离发光单元的一侧、且与发光单元电连接。从而可以使得第一电极通过辅助电极与第一导电部电连接，简单易实现。
这里对于上述发光单元的结构、颜色等均不做具体限定。示例的，发光单元可以包括如图1和图2所示的红色发光单元、绿色发光单元和蓝色发光单元。示例的，发光单元可以包括依次层叠设置的第二电极、外延片和第一电极。
上述绝缘部覆盖发光单元的至少一个侧面是指：可以如图1和图2所示，绝缘部36仅覆盖发光单元的一个侧面；或者，还可以是绝缘部覆盖发光单元的所有侧面，这里不做具体限定。
对于上述绝缘部的材料不做具体限定。示例的，上述绝缘部的材料可以为氮化硅、氧化硅或者氮氧化硅中的任意一种或者多种的组合。
上述辅助电极至少位于绝缘部远离发光单元的一侧、且与发光单元电连接。这里辅助电极至少位于绝缘部远离发光单元的一侧是指：可以是如图1和图2所示，绝缘部36仅覆盖发光单元的一个侧面，此时仅发光单元的一个侧面设置有辅助电极37，第一电极31通过该辅助电极37与第一导电部1电连接；或者，还可以是绝缘部覆盖发光单元的所有侧面，此时在所有侧面远离发光单元的一侧设置有辅助电极，第一电极可以通过多个辅助电极与第一导电部电连接。这里辅助电极与发光单元电连接是指：辅助电极与发光单元中的第一电极搭接。示例的，辅助电极可以与部分第一电极搭接；或者，辅助电极可以与整个第一电极搭接，这里不做具体限定。
对于上述辅助电极的材料不做具体限定。示例的，上述辅助电极的材料可以为金属，进一步可以为反射金属，例如：银(Ag)、铝(Al)等，当然也可以为复合材料，例如：IZO+反射金属等。在辅助电极的材料包括反射金属的情况下，辅助电极还可以反射光线，从而提升光线利用率。
可选地，绝缘部覆盖发光单元的所有侧面；辅助电极位于绝缘部远离发光单元的一侧、以及至少覆盖部分发光单元的第二表面。从而可以使得若某一个辅助电极与第一导电部出现接触不良等问题时，不至于影响发光单元中第一电极与第一导电部的电连接，仍可以实现通过第一导电部向发光单元传输Vcom信号的功能。
对于上述辅助电极至少覆盖部分发光单元的第二表面是指：上述辅助电极覆盖部分发光单元的第二表面，与第一电极的部分接触；或者，上述辅助电极覆盖发光单元的整个第二表面，与整个第一电极接触，这里不做具体限定。图1和图2均以绝缘部36仅覆盖发光单元的一个侧面、且辅助电极37覆盖部分发光单元的第二表面为例进行绘示。
可选地，发光单元包括依次层叠设置在驱动背板上的第二电极、外延片和第一电极，辅助电极与第一电极电连接、且至少覆盖部分第一电极。从而使得第一电极能够通过辅助电极与第一导电部电连接，以通过第一导电部向第一电极输入Vcom信号。
上述外延片可以包括依次层叠设置的空穴注入层、发光层和电子注入层；或者，外延片可以包括依次层叠设置的电子注入层、发光层和空穴注入层。图1和图2均以红色外延片包括依次层叠的第一空穴注入层33、第一发光层34和第一电子注入层35为例进行绘示。
上述发光层是外延片的发光区，可对载流子起约束作用。这里对于该发光层的材料不做具体限定。示例的，发光层的材料可以包括多量子阱。
上述电子注入层可用于提供电子，可作为发光层的N区。这里对于该电子注入层的材料不做具体限定。示例的，电子注入层的材料可以包括氮化镓(GaN)、磷化镓(GaP)或者氧化锌(ZnO)中的任一种。
上述空穴注入层可用于提供空穴，可作为发光层的P区。这里对于该空穴注入层的材料不做具体限定。示例的，空穴注入层的材料可以包括氮化镓(GaN)、磷化镓(GaP)或者氧化锌(ZnO)中的任一种。
上述发光层还可以包括其它膜层，例如：发光层包括设置在发光层远离所述电子注入层一侧的电子阻挡层，可用于阻挡电子泄露到发光层的P区，提高发光复合区中电子和空穴的复合率。
上述辅助电极至少覆盖部分第一电极是指：上述辅助电极覆盖部分第一电极；或者，上述辅助电极覆盖整个第一电极，这里不做具体限定。
可选地，发光器件还包括设置在驱动背板和第二电极之间的反射层。从而得到正装结构的发光器件，此时，两个电极均位于出光侧。
在示例性的实施例中，反射层可以包括铝金属层和保护层，其中，保护层位于铝金属层和驱动背板之间，铝金属层和保护层均具有导电性，铝金属层具有良好的反光效果，从而能够将发光层射向反射层方向的光线反射出去，提高发光面板的出光率，提高发光层发出的光线的使用效率，提高显示效果，降低功耗。
需要说明的是，上述反射层可以具有导电性，或者，也可以使得发光器件中的第二电极使用具有反射性的材料制得，即第二电极还被配置为具有反射功能。
可选地，驱动基板包括第一衬底，多个第一导电部和阵列排布的多个驱 动单元均设置在第一衬底上；第一衬底为硅基板。
在示例性的实施例中，驱动基板可以包括硅元素，例如多晶硅或单晶硅，驱动基板又可以被称为硅基板或硅基背板。
需要说明的是，本申请的一些实施例提供的驱动单元可以采用硅基晶体管，无需对阈值电压进行补偿，驱动单元的结构简单，单个硅基晶体管的体积减小，驱动单元面积可大幅减小，从而大幅提升发光面板的像素密度。
本申请的实施例还提供了一种发光装置，包括上述的发光面板。
在示例性的实施例中，该发光装置可以用作背光装置，或者，也可以用作显示装置。
在示例性的实施例中，该发光装置可以为Mini-LED发光装置；或者，该发光装置也可以为Micro-LED发光装置。
在本申请的实施例中，该发光装置的各第二电极和一个驱动单元电连接，第一电极和第一导电部电连接；至少一个第一电极和第一导电部电连接的连接点，与除第一电极和第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。这样一方面，由于至少一个第一电极与其它第一电极不再电连接，使得至少一个第一电极可以被第一导电部上的电压单独控制，从而有效的减小了发光器件出光面如果使用透明第一电极，而透明第一电极方阻较大带来的严重的IR drop问题；另一方面，由于至少一个第一电极可以被第一导电部上的电压单独控制，即至少一个第一电极独立图形化，从而可以单独对至少一个第一电极进行动态调整控制，降低功耗。
本申请的实施例又提供了一种如上述发光面板的制备方法。
该方法包括：
S1、形成驱动基板和多个发光器件。
其中，驱动基板包括多个第一导电部和阵列排布的多个驱动单元，第一导电部与驱动单元绝缘；多个发光器件阵列排布在驱动基板上，发光器件包括第一电极和第二电极，各第二电极和一个驱动单元电连接，第一电极和第一导电部电连接；至少一个第一电极和第一导电部电连接的连接点，与除第一电极和第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。
上述形成驱动基板和形成多个发光器件的顺序不做具体限定。示例的，可以先形成驱动基板，再形成多个发光器件；或者，可以同时形成驱动基板和形成多个发光器件；或者，可以先形成多个发光器件，再形成驱动基板。
需要说明的是，本申请实施例提供的制备方法制备出的发光面板还可以包括其它结构和部件，该发光面板包括的各个结构和部件可以参考前文中实施例对发光器件的描述，这里不再赘述。
通过执行上述步骤S1，可以使得一方面，至少一个第一电极可以被第一导电部上的电压单独控制，从而有效的减小了发光器件出光面如果使用透明第一电极，而透明第一电极方阻较大带来的严重的IR drop问题；另一方面，由于至少一个第一电极可以被第一导电部上的电压单独控制，即至少一个第一电极独立图形化，从而可以单独对至少一个第一电极进行动态调整控制，降低功耗。
下面参考图1、图7至图13，具体说明发光器件的制备方法。
S21、参考图7所示，在第二衬底30上生长外延片。
其中，外延片包括依次层叠设置的第一电子注入层35、发光层34和第一空穴注入层33。
这里对于上述第二衬底的材料不做具体限定。示例的，该第二衬底的材料可以包括硅或者碳化硅中的任一种。
S22、参考图8所示，翻转外延片，并将翻转后的外延片中的第一空穴注入层33通过第二电极32与驱动基板上的键合金属38键合。
其中，驱动基板包括第一衬底11和设置在第一衬底上的键合金属38。
这里对于上述驱动基板的类型不做具体限定。示例的，上述驱动基板可以为CMOS背板。
这里对于上述键合工艺不做具体限定。示例的，上述键合工艺可以采用共晶键合或热压键合。示例的，上述键合温度范围可以包括100-400℃，具体的，上述键合温度可以为100℃、200℃、300℃或者400℃等等。
这里对于上述第二电极和键合金属的材料均不做具体限定。示例的，第二电极和键合金属的材料可以均包括金属，例如：铜(Cu)、锡(Sn)、银(Ag)、金(Au)、铟(In)等等。该第二电极的材料可以和键合金属的材料发生键合，例如发生Cu-Sn、Sn-Ag、Sn-In、Sn-Au、Au-In、Cu-In等键合，其中，Cu-Sn代表若第二电极的材料为Cu、键合金属的材料为Sn时，二者可以发生键合；或者，若第二电极的材料为Sn、键合金属的材料为Cu时，二者可以发生键合。
S23、参考图9所示，去除第二衬底30。
在实际应用中，可以根据情况将上述第二衬底去除。若上述第二衬底为 硅衬底，可以采用湿法刻蚀工艺或者干法刻蚀工艺去除，例如：可以将发光器件浸泡在氢氟酸(HF)中，以去除第二衬底。
需要说明的是，也可以不去除第二衬底，只要能够将外延片图案化即可。
S24、参考图10所示，图案化外延片，形成多个外延片。
这里对于上述图案化的工艺不做具体限定。示例的，可以采用干法刻蚀工艺将外延片图案化。
S25、参考图11所示，图案化键合金属38，形成多个第二电极32。
这里对于上述图案化的工艺不做具体限定。示例的，可以采用湿法刻蚀工艺或者干法刻蚀工艺将第二电极图案化。
S26、参考图12所示，在各外延片上形成第一电极31。
这里对于上述第一电极的材料不做具体限定，示例的，上述第一电极的材料可以包括金属等，例如：ITO(Indium Tin Oxides，铟锡氧化物)、铬/铂/金、钛/金、钛/银/氧化铟锡(Ti/Ag/ITO)等。
S27、参考图13所示，在各发光单元的一个侧面形成绝缘部36。
对于上述绝缘部的材料不做具体限定。示例的，上述绝缘部的材料可以为氮化硅、氧化硅或者氮氧化硅中的任意一种或者多种的组合。
当然，还可以在各发光单元的所有侧面均形成绝缘部。
S28、参考图1所示，在各发光单元的绝缘部36远离发光单元的一侧形成辅助电极37。
对于上述辅助电极的材料不做具体限定。示例的，上述辅助电极的材料可以为金属，进一步可以为反射金属，例如：银(Ag)、铝(Al)等，当然也可以为复合材料，例如：IZO+反射金属等。
当然，还可以在各发光单元所有侧面的绝缘部远离发光单元的一侧设置辅助电极。
需要说明的是，此处发光器件的键合过程以发光器件包括三个发光单元为例进行说明。在发光单元数量不同的情况下，其键合过程与前文类似，这里不再赘述。
此处形成的三个发光单元发出光线的颜色一致。若要发光单元发出光线的颜色不一致，可以在例如发光层为蓝色发光层时，不改变其中一个发光单元的结构，而在另外两个发光单元中增设量子点层，例如将量子点层设置在第一电极远离第二电极的一侧，此时可以使得另外两个发光单元分别发红光和绿光。
另外，本申请的实施例仅介绍了与发明点相关的发光器件中的发光单元的键合过程，发光器件中包括的其它膜层和部件的制备方法可以参考相关技术，这里不再赘述。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本申请的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
最后应说明的是：以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (16)

  1. 一种发光面板，其中，包括：
    驱动基板，所述驱动基板包括多个第一导电部和阵列排布的多个驱动单元，所述第一导电部与所述驱动单元绝缘；
    多个发光器件，阵列排布在所述驱动基板上，所述发光器件包括第一电极和第二电极，各所述第二电极和一个所述驱动单元电连接，所述第一电极和所述第一导电部电连接；至少一个所述第一电极和所述第一导电部电连接的连接点，与除所述第一电极和所述第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。
  2. 根据权利要求1所述的发光面板，其中，所有所述第一电极分为多组，各组包括至少一个所述第一电极、且各组与不同的所述第一导电部电连接。
  3. 根据权利要求2所述的发光面板，其中，各组包括一个所述第一电极，各所述第一电极与一个所述第一导电部电连接。
  4. 根据权利要求2所述的发光面板，其中，各组包括多个所述第一电极，各组内的至少一个所述第一电极与不同的所述第一导电部电连接。
  5. 根据权利要求4所述的发光面板，其中，各组内的所有所述第一电极与一个所述第一导电部电连接。
  6. 根据权利要求2所述的发光面板，其中，各组至少包括三个颜色不同的所述发光器件，每一种颜色不同的所述发光器件分别与不同的所述第一导电部电连接。
  7. 根据权利要求6所述的发光面板，其中，所述发光面板至少包括红色发光器件、蓝色发光器件和绿色发光器件，所述红色发光器件与一个所述第一导电部电连接，所述绿色发光器件与一个所述第一导电部电连接，所述蓝色发光器件与一个所述第一导电部电连接。
  8. 根据权利要求1所述的发光面板，其中，所述驱动基板还包括设置在所述发光器件和所述驱动单元之间的第二导电部，所述发光器件通过所述第二导电部与所述驱动单元电连接；所述第二导电部与所述第一导电部绝缘；
    多个所述第一导电部中的至少一个所述第一导电部与所述第二导电部同层设置；
    或者，多个所述第一导电部中的至少一个所述第一导电部与所述驱动单元同层设置。
  9. 根据权利要求8所述的发光面板，其中，所述在多个所述第一导电部中的至少一个所述第一导电部与所述第二导电部同层设置的情况下，所有所述第一导电部与所述第二导电部同层设置。
  10. 根据权利要求1所述的发光面板，其中，所述发光器件包括发光单元，所述发光单元包括侧面、相对的第一表面和第二表面，所述第一表面和所述第二表面分别与所述侧面相连，所述第二表面位于所述发光单元远离所述驱动背板的一侧；
    所述发光器件还包括绝缘部和辅助电极，所述绝缘部覆盖所述发光单元的至少一个侧面；所述辅助电极至少位于所述绝缘部远离所述发光单元的一侧、且与所述发光单元电连接。
  11. 根据权利要求10所述的发光面板，其中，所述绝缘部覆盖所述发光单元的所有所述侧面；
    所述辅助电极位于所述绝缘部远离所述发光单元的一侧、以及至少覆盖部分所述发光单元的所述第二表面。
  12. 根据权利要求11所述的发光面板，其中，所述发光单元包括依次层叠设置在所述驱动背板上的所述第二电极、外延片和所述第一电极，所述辅助电极与所述第一电极电连接、且至少覆盖部分所述第一电极。
  13. 根据权利要求11所述的发光面板，其中，所述发光器件还包括设置在所述驱动背板和所述第二电极之间的反射层。
  14. 根据权利要求1所述的发光面板，其中，所述驱动基板包括第一衬底，所述多个所述第一导电部和所述阵列排布的多个所述驱动单元均设置在所述第一衬底上；
    所述第一衬底为硅基板。
  15. 一种发光装置，其中，包括权利要求1-14任一项所述的发光面板。
  16. 一种如权利要求1-14任一项所述的发光面板的制备方法，其中，所述方法包括：
    形成驱动基板和多个发光器件；其中，所述驱动基板包括多个第一导电部和阵列排布的多个驱动单元，所述第一导电部与所述驱动单元绝 缘；多个所述发光器件阵列排布在所述驱动基板上，所述发光器件包括第一电极和第二电极，各所述第二电极和一个所述驱动单元电连接，所述第一电极和所述第一导电部电连接；至少一个所述第一电极和所述第一导电部电连接的连接点，与除所述第一电极和所述第一导电部以外的其余第一电极和第一导电部电连接的连接点不同。
PCT/CN2022/116247 2022-08-31 2022-08-31 一种发光面板及其制备方法、发光装置 WO2024045057A1 (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943649A (zh) * 2013-02-15 2014-07-23 上海天马微电子有限公司 Oled显示面板及其驱动方法
US20140353603A1 (en) * 2013-05-29 2014-12-04 Samsung Display Co., Ltd. Organic light emitting display device
CN110164942A (zh) * 2019-05-31 2019-08-23 江苏集萃有机光电技术研究所有限公司 一种显示面板及其制备方法、显示装置
CN110416437A (zh) * 2018-07-25 2019-11-05 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN112086487A (zh) * 2020-09-03 2020-12-15 云谷（固安）科技有限公司 一种显示面板及显示设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103943649A (zh) * 2013-02-15 2014-07-23 上海天马微电子有限公司 Oled显示面板及其驱动方法
US20140353603A1 (en) * 2013-05-29 2014-12-04 Samsung Display Co., Ltd. Organic light emitting display device
CN110416437A (zh) * 2018-07-25 2019-11-05 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN110164942A (zh) * 2019-05-31 2019-08-23 江苏集萃有机光电技术研究所有限公司 一种显示面板及其制备方法、显示装置
CN112086487A (zh) * 2020-09-03 2020-12-15 云谷（固安）科技有限公司 一种显示面板及显示设备

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