WO2024038743A1 - トランス - Google Patents

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Publication number
WO2024038743A1
WO2024038743A1 PCT/JP2023/027328 JP2023027328W WO2024038743A1 WO 2024038743 A1 WO2024038743 A1 WO 2024038743A1 JP 2023027328 W JP2023027328 W JP 2023027328W WO 2024038743 A1 WO2024038743 A1 WO 2024038743A1
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WIPO (PCT)
Prior art keywords
coil
transformer
outer coil
insulator
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/027328
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English (en)
French (fr)
Japanese (ja)
Inventor
将信 辻
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Rohm Co Ltd
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Rohm Co Ltd
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Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024541475A priority Critical patent/JPWO2024038743A1/ja
Publication of WO2024038743A1 publication Critical patent/WO2024038743A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00—Fixed transformers or mutual inductances of the signal type
    • H01F19/04—Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Definitions

  • the present disclosure relates to a transformer.
  • Patent Document 1 discloses a semiconductor integrated circuit as an insulated gate driver including a transformer having a first coil on the primary side and a second coil on the secondary side.
  • transformers such as those described above are required to have improved dielectric strength.
  • a transformer according to an embodiment of the present disclosure includes a substrate having an upper surface and a lower surface of the substrate, a first insulator in contact with the upper surface of the substrate, a second insulator in contact with the lower surface of the substrate, and disposed within the first insulator. an outer coil and an inner coil, the inner coil being disposed inside the outer coil and not overlapping the outer coil when viewed from a direction perpendicular to the upper surface of the substrate.
  • the transformer that is one aspect of the present disclosure, it is possible to improve the dielectric strength.
  • FIG. 1 is a circuit diagram schematically showing the configuration of a signal transmission device including a transformer according to the first embodiment.
  • 2 is a schematic plan view schematically showing the signal transmission device of FIG. 1.
  • FIG. 3 is a schematic plan view of a transformer in the signal transmission device of FIG. 2.
  • FIG. 4 is a cross-sectional view taken along line F4-F4 in FIG.
  • FIG. 5 is a sectional view taken along the line F5-F5 in FIG.
  • FIG. 6 is a schematic cross-sectional view of a transformer of a comparative example.
  • FIG. 7 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 8 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 9 is a schematic perspective view showing outer coil conductor wiring in a modified example of the transformer shown in FIG.
  • FIG. 10 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 11 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 12 is a circuit diagram schematically showing the configuration of a power transmission device according to a modification.
  • FIG. 13 is a circuit diagram schematically showing the configuration of a power transmission device according to a modified example.
  • FIG. 14 is a circuit diagram schematically showing the configuration of a signal transmission device including a transformer according to the second embodiment.
  • FIG. 15 is a schematic plan view schematically showing the signal transmission device of FIG. 14.
  • FIG. 16 is a schematic plan view of a transformer in the signal transmission device of FIG. 15.
  • FIG. 15 is a schematic plan view schematically showing the signal transmission device of FIG. 14.
  • FIG. 17 is a sectional view taken along the line F17-F17 in FIG. 16.
  • FIG. 18 is a sectional view taken along the line F18-F18 in FIG. 16.
  • FIG. 19 is an explanatory diagram of the operation in the transformer of the second embodiment.
  • FIG. 20 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 21 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 22 is a schematic perspective view showing the outer coil conductor wiring in the transformer according to the modified example of FIG. 21.
  • FIG. FIG. 23 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 24 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 20 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 21 is a schematic cross-sectional view of a modified example of the transformer.
  • FIG. 22 is a schematic perspective view showing the outer coil
  • FIG. 25 is a circuit diagram schematically showing the configuration of a modified signal transmission device.
  • FIG. 26 is a schematic plan view of the signal transmission device of FIG. 25.
  • FIG. 27 is a schematic plan view schematically showing a modified example of the transformer of the second embodiment.
  • FIG. 28 is a schematic plan view schematically showing a modified example of the transformer of the second embodiment.
  • FIG. 29 is a schematic plan view schematically showing a modified example of the transformer of the second embodiment.
  • the expression “at least one” as used herein means “one or more” of the desired options.
  • the expression “at least one” as used herein means “only one option” or “both of the two options” if the number of options is two.
  • the expression “at least one” as used herein means “only one option” or “any combination of two or more options” if there are three or more options. means.
  • FIG. 1 is a circuit diagram schematically showing the configuration of a signal transmission device including a transformer according to the first embodiment.
  • 2 is a schematic plan view schematically showing the signal transmission device of FIG. 1.
  • FIG. The first embodiment is configured as a signal transmission device 10 including a transformer 15.
  • the signal transmission device 10 is a device that transmits a pulse signal while electrically insulating a primary terminal 11 and a secondary terminal 12.
  • Signal transmission device 10 is, for example, a digital isolator.
  • the signal transmission device 10 includes a primary circuit 13 electrically connected to a primary terminal 11, a secondary circuit 14 electrically connected to a secondary terminal 12, and a primary circuit 13.
  • a transformer 15 that electrically insulates the secondary circuit 14 is included.
  • the primary side circuit 13 is a circuit configured to operate when the first voltage V1 is applied.
  • the primary circuit 13 is electrically connected to, for example, an external control device (not shown).
  • the primary circuit 13 includes a transmitting circuit 13T.
  • the secondary side circuit 14 is a circuit configured to operate when a second voltage V2 different from the first voltage V1 is applied.
  • the second voltage V2 is higher than the first voltage V1, for example.
  • the first voltage V1 and the second voltage V2 are DC voltages.
  • the secondary circuit 14 is electrically connected to, for example, a drive circuit that is controlled by a control device.
  • An example of a drive circuit is a switching circuit.
  • the secondary circuit 14 includes a receiving circuit 14R. A ground for the primary circuit 13 and a ground for the secondary circuit 14 are provided independently.
  • the transformer 15 is connected between the transmitting circuit 13T and the receiving circuit 14R.
  • the transformer 15 includes a primary coil 16 and a secondary coil 17.
  • the primary coil 16 is connected to a transmitting circuit 13T, and the secondary coil 17 is connected to a receiving circuit 14R.
  • a control signal from, for example, a control device is input to the transmission circuit 13T of the primary side circuit 13 through the primary side terminal 11.
  • the control signal is received by the receiving circuit 14R of the secondary circuit 14 from the transmitting circuit 13T of the primary circuit 13 via the transformer 15.
  • the signal transmitted to the secondary circuit 14 is output from the secondary circuit 14 to the drive circuit through the secondary terminal 12.
  • the primary side circuit 13 and the secondary side circuit 14 are electrically insulated by the transformer 15. More specifically, while the transformer 15 restricts the transmission of DC voltage between the primary circuit 13 and the secondary circuit 14, it allows the transmission of pulse signals.
  • the state where the primary side circuit 13 and the secondary side circuit 14 are insulated refers to the state where the transmission of DC voltage is cut off between the primary side circuit 13 and the secondary side circuit 14. This means that transmission of pulse signals from the primary circuit 13 to the secondary circuit 14 is permitted. In this way, the secondary circuit 14 is configured to receive the signal from the primary circuit 13.
  • the dielectric strength voltage of the signal transmission device 10 is, for example, 2500 Vrms or more and 7500 Vrms or less.
  • the dielectric strength voltage of the signal transmission device 10 of the first embodiment is approximately 5700 Vrms.
  • the specific numerical value of the dielectric strength voltage of the signal transmission device 10 is not limited to this and is arbitrary.
  • the signal transmission device 10 is a semiconductor device in which a plurality of semiconductor chips are packaged into one package.
  • the package format of the signal transmission device 10 is, for example, an SO (Small Outline) system, and in the first embodiment is an SOP (Small Outline Package). Note that the package format of the signal transmission device 10 can be changed arbitrarily.
  • the signal transmission device 10 includes a first chip 31, a second chip 32, and a transformer 40 as semiconductor chips.
  • the first chip 31 includes the primary side circuit 13 shown in FIG.
  • the second chip 32 includes the secondary side circuit 14 shown in FIG.
  • the transformer 40 includes the transformer 15 (the primary coil 16 and the secondary coil 17) shown in FIG.
  • the signal transmission device 10 includes a first die pad 21 on the primary side and a second die pad 22 on the secondary side. Both the first die pad 21 and the second die pad 22 are formed into a flat plate shape. Both the first die pad 21 and the second die pad 22 are made of a conductive material.
  • each die pad 21, 22 is formed of a material containing Cu (copper). Note that each die pad 21, 22 may be formed of other metal materials such as Al (aluminum).
  • the material constituting each die pad 21, 22 is not limited to a conductive material.
  • each die pad 21, 22 may be made of ceramic such as alumina. That is, each die pad 21, 22 may be formed of a material having electrical insulation properties.
  • the first die pad 21 and the second die pad 22 are arranged side by side and spaced apart from each other.
  • the arrangement direction of the first die pad 21 and the second die pad 22 is defined as the x direction.
  • the direction orthogonal to the x direction is defined as the y direction. Note that in the following description, plan view means viewing from the z direction.
  • the first chip 31 and transformer 40 are mounted on the first die pad 21.
  • the first chip 31 and the transformer 40 are bonded to the first die pad 21 by bonding materials 25 and 26.
  • the bonding materials 25 and 26 are, for example, conductive bonding materials such as solder and Ag (silver) paste.
  • an insulating bonding material such as epoxy resin may be used.
  • the material of the bonding material 25 of the first chip 31 and the material of the bonding material 26 of the transformer 40 may be different from each other.
  • the second chip 32 is mounted on the second die pad 22.
  • the second chip 32 is bonded to the second die pad 22 by a bonding material 27.
  • the bonding material 27 is, for example, a conductive bonding material such as solder or Ag paste. Note that as the bonding material 27, an insulating bonding material such as epoxy resin may be used.
  • the signal transmission device 10 includes a plurality of primary leads 23 and a plurality of secondary leads 24.
  • FIG. 2 shows four primary leads 23A to 23D and four secondary leads 24A to 24D.
  • the primary leads 23A and 23D are connected to the first die pad 21.
  • the primary leads 23B and 23C are connected to the first chip 31 by primary wires W11A and W11B.
  • the primary leads 23B and 23C are used for supplying operating voltage to the first chip 31, inputting signals, and the like.
  • the primary lead 23B or the primary lead 23C is used as the primary terminal 11 shown in FIG.
  • the first chip 31 is connected to the first die pad 21 by a wire W12.
  • the number, shape, connection state, etc. of the primary leads 23 can be changed as appropriate.
  • Wires W11A, W11B, and W12 are bonding wires formed by a wire bonding device.
  • the wires W11A, W11B, and W12 are made of a conductor such as Au (gold), Al,
  • the secondary leads 24A and 24D are connected to the second die pad 22.
  • the secondary leads 24B and 24C are connected to the second chip 32 by secondary wires W17A and W17B.
  • the secondary leads 24B and 24C are used for supplying operating voltage to the second chip 32, outputting signals, and the like.
  • the secondary lead 24B or the secondary lead 24C is used as the secondary terminal 12 shown in FIG.
  • the second chip 32 is connected to the second die pad 22 by a wire W16.
  • the number, shape, connection state, etc. of the secondary leads 24 can be changed as appropriate.
  • Wires W16, W17A, and W17B are bonding wires formed by a wire bonding device.
  • the wires W16, W17A, and W17B are made of a conductor such as Au, Al, or Cu.
  • the first chip 31 is connected to the transformer 40 by wires W13A and W13B.
  • the transformer 40 is connected to the second chip 32 by wires W15A and W15B.
  • Wires W13A, W13B, W15A, and W15B are bonding wires formed by a wire bonding device.
  • the wires W13A, W13B, W15A, and W15B are made of a conductor such as Au, Al, or Cu.
  • the signal transmission device 10 further includes a sealing resin 28.
  • the sealing resin 28 seals a portion of each die pad 21, 22, each chip 31, 32, a transformer 40, and each lead 23, 24.
  • the sealing resin 28 is made of an electrically insulating material. A black epoxy resin is used as an example of such a material.
  • the sealing resin 28 is formed into a rectangular plate shape with the thickness direction in the z direction.
  • the transformer 40 is mounted on the first die pad 21. That is, both the transformer 40 and the first chip 31 are mounted on the first die pad 21.
  • the transformer 40 and the first chip 31 are spaced apart from each other in the x direction on the first die pad 21 . Therefore, it can be said that the first chip 31, the transformer 40, and the second chip 32 are arranged apart from each other in the x direction.
  • the first chip 31, the transformer 40, and the second chip 32 are arranged in this order. In other words, the transformer 40 is arranged between the first chip 31 and the second chip 32 in the x direction.
  • the distance between the first die pad 21 and the second die pad 22 in the x direction is larger than the distance between the first chip 31 and the transformer 40 in the x direction. Therefore, the distance between the first chip 31 and the transformer 40 is smaller than the distance between the transformer 40 and the second chip 32 in the x direction. In other words, the transformer 40 is arranged closer to the first chip 31 than the second chip 32.
  • FIG. 3 is a schematic plan view of the transformer 40. 4 is a sectional view taken along the line F4-F4 in FIG. 3, and FIG. 5 is a sectional view taken along the line F5-F5 in FIG. In FIG. 3, the outer coil 60 and the inner coil 70 are shown in solid lines for easy understanding.
  • the transformer 40 is a transformer chip that includes an outer coil 60 and an inner coil 70.
  • the primary coil 16 shown in FIG. 1 includes an outer coil 60.
  • the secondary coil 17 shown in FIG. 1 includes an inner coil 70.
  • the transformer 40 includes a chip main surface 41 and a chip back surface 42 facing opposite to the chip main surface 41. Furthermore, the transformer 40 includes four chip side surfaces 43, 44, 45, and 46 perpendicular to both the chip main surface 41 and the chip back surface 42.
  • the chip side surfaces 43 and 44 constitute both end surfaces of the transformer 40 in the y direction.
  • the chip side surfaces 45 and 46 constitute both end surfaces of the transformer 40 in the x direction.
  • the transformer 40 includes a substrate 51, a first insulator 52 disposed on the substrate 51, and a second insulator 53 disposed below the substrate 51.
  • the substrate 51 has a substrate upper surface 51S and a substrate lower surface 51R facing oppositely to each other in the z direction.
  • the substrate 51 is made of, for example, a semiconductor substrate, a glass substrate, or the like.
  • the substrate 51 is a substrate formed from a material containing Si (silicon). Examples of the Si substrate used for the substrate 51 include a semiconductor substrate made of a single-crystal intrinsic semiconductor material, a p-type semiconductor substrate containing acceptor-type impurities, and an n-type semiconductor substrate containing donor-type impurities.
  • the substrate 51 may be made of a wide bandgap semiconductor or a compound semiconductor as a semiconductor substrate. Furthermore, instead of the semiconductor substrate, the substrate 51 may be an insulating substrate made of a material containing glass.
  • a wide band gap semiconductor is a semiconductor substrate having a band gap of 2.0 eV or more.
  • the wide bandgap semiconductor may be SiC (silicon carbide), GaN (gallium nitride), Ga 2 O 3 (gallium oxide), or the like.
  • the compound semiconductor may be a III-V compound semiconductor.
  • the compound semiconductor may include at least one of AlN (aluminum nitride), InN (indium nitride), GaN, and GaAs (gallium arsenide).
  • the first insulator 52 is formed on the substrate 51.
  • the first insulator 52 is in contact with the top surface 51S of the substrate 51.
  • the first insulator 52 includes a lower surface 52R in contact with the substrate 51 and an upper surface 52S on the opposite side of the lower surface 52R.
  • the upper surface 52S of the first insulator 52 constitutes the chip main surface 41 of the transformer 40.
  • the first insulator 52 of the first embodiment includes a plurality of insulating layers 521 to 526, 52U.
  • the plurality of insulating layers 521 to 526, 52U are stacked in the z direction from the top surface 51S of the substrate 51. Therefore, it can be said that the z direction is the thickness direction of the first insulator 52. Further, the z direction can also be said to be the lamination direction of the plurality of insulating layers 521 to 526, 52U included in the first insulator 52.
  • the lowermost insulating layer 521 is in contact with the upper substrate surface 51S of the substrate 51.
  • the upper surface of the uppermost insulating layer 52U constitutes a chip main surface 41 of the transformer 40.
  • the uppermost insulating layer 52U among the plurality of insulating layers 521 to 526, 52U will be referred to as the second insulating layer 52U, and the insulating layers 521 to 526 other than the second insulating layer 52U will be referred to as the first insulating layer. May be shown as 521-526.
  • the first insulating layers 521 to 526 are made of, for example, a material containing Si.
  • a material containing Si As the material containing Si, SiO 2 (silicon oxide), SiN (silicon nitride), SiC, SiCN (nitrogen-doped silicon carbide), etc. can be used. Note that at least one of the first insulating layers 521 to 526 may be made of a different material. Further, at least one of the first insulating layers 521 to 526 may be formed by stacking a plurality of films.
  • the first insulating layers 521 to 526 may be composed of a thin film formed of a material containing SiN, SiC, SiCN, etc., and an interlayer insulating film formed of a material containing SiO 2 .
  • the first insulating layers 521 to 526 may be formed as one insulating layer without being distinguished from each other.
  • the second insulating layer 52U is made of, for example, a material containing resin having electrical insulation properties.
  • the second insulating layer 52U is formed of, for example, a passivation film including a nitride film and a resin film having electrical insulation properties.
  • the nitride film includes, for example, materials such as Si 3 N 4 , SiN, and SiCN.
  • the resin film includes, for example, polyimide (PI). Note that the second insulating layer 52U may be formed of a material containing Si, similar to the first insulating layers 521 to 526.
  • the second insulator 53 is formed under the substrate 51.
  • the second insulator 53 is in contact with the lower surface 51R of the substrate 51.
  • the second insulator 53 includes an upper surface 53S in contact with the substrate lower surface 51R of the substrate 51, and a lower surface 53R on the opposite side to the upper surface 53S.
  • the lower surface 53R of the second insulator 53 constitutes the back surface 42 of the chip of the transformer 40.
  • the second insulator 53 of the first embodiment includes a plurality of insulating layers 531 to 534.
  • the plurality of insulating layers 531 to 534 are stacked in the z direction from the bottom surface 51R of the substrate 51. Therefore, it can be said that the z direction is the thickness direction of the second insulator 53. Further, the z direction can also be said to be the lamination direction of the plurality of insulating layers 531 to 534 included in the second insulator 53.
  • the uppermost insulating layer 531 is in contact with the lower substrate surface 51R of the substrate 51.
  • the lower surface of the lowermost insulating layer 534 constitutes the back surface 42 of the chip of the transformer 40 .
  • the second insulator 53 can be formed of the same material as the first insulator 52.
  • the insulating layers 531 to 534 of the second insulator 53 are made of, for example, a material containing Si.
  • the material containing Si, SiO 2 , SiN, SiC, SiCN, etc. can be used.
  • at least one of the insulating layers 531 to 534 may be made of a different material.
  • at least one of the insulating layers 531 to 534 may be formed by stacking a plurality of films.
  • the insulating layers 531 to 534 may be composed of a thin film formed of a material containing SiN, SiC, SiCN, etc., and an interlayer insulating film formed of a material containing SiO 2 .
  • the insulating layers 531 to 534 may be formed as one insulating layer without being distinguished from each other.
  • the second insulator 53 can also be formed of a different material from the first insulator 52.
  • the insulating layers 531 to 534 of the second insulator 53 may be formed of, for example, a material containing electrically insulating resin. As this material, for example, a material containing polyimide can be used.
  • transformer 40 includes an outer coil 60 and an inner coil 70. As shown in FIGS. As shown in FIG. 4, outer coil 60 and inner coil 70 are embedded in first insulator 52. As shown in FIG.
  • the outer coil 60 includes a first end 60A and a second end 60B opposite to the first end 60A.
  • the outer coil 60 is formed in a circular spiral shape when viewed from above.
  • the first end 60A is located inside the spiral
  • the second end 60B is located outside the spiral.
  • the outer coil 60 is wound in a spiral shape, with the first end 60A being the inner end and the second end 60B being the outer end.
  • the outer coil 60 is provided on the first insulating layer 526, which is the uppermost layer among the plurality of first insulating layers 521 to 526. That is, the outer coil 60 is disposed closer to the upper surface 52S of the first insulator 52.
  • the outer coil 60 is formed of a material containing one or more appropriately selected from Ti (titanium), TiN (titanium nitride), Au, Ag, Cu, Al, and W (tungsten).
  • the outer coil 60 of the first embodiment is made of a material containing Al.
  • Inner coil 70 is arranged inside outer coil 60.
  • the inner coil 70 is arranged so as not to overlap the outer coil 60 in plan view.
  • the inner coil 70 includes a first end 70A and a second end 70B opposite to the first end 70A.
  • the inner coil 70 is formed in a circular spiral shape when viewed from above.
  • the first end 70A is arranged inside the spiral
  • the second end 70B is arranged outside the spiral.
  • the inner coil 70 is wound in a spiral shape with the first end 70A being the inner end and the second end 70B being the outer end.
  • the inner coil 70 may have the first end 70A as the outer end and the second end 70B as the inner end.
  • the inner coil 70 is provided in the first insulating layer 526, which is the uppermost layer among the plurality of first insulating layers 521 to 526. That is, the inner coil 70 is disposed closer to the upper surface 52S of the first insulator 52.
  • the inner coil 70 is formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the inner coil 70 of the first embodiment is made of a material containing Al.
  • the transformer 40 includes a wiring section 80.
  • the wiring section 80 is electrically connected to the outer coil 60.
  • the wiring portion 80 is electrically connected to the first end 60A of the outer coil 60. Note that in FIG. 4, the wiring section 80 is schematically shown.
  • the wiring section 80 includes a connection wiring 81, vias 82 and 83, and a terminal section 84.
  • the wiring portion 80 is formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the terminal portion 84 is arranged near the chip side surface 46.
  • the terminal portion 84 is arranged at the same position in the y direction as the first end 60A of the outer coil 60 in plan view. Note that the arrangement position of the terminal portion 84 may be changed arbitrarily.
  • connection wiring 81 is arranged below the outer coil 60.
  • the connection wiring 81 is provided in the first insulating layer 524 two layers below the first insulating layer 526 on which the outer coil 60 is provided. Note that the position where the connection wiring 81 is provided may be changed as appropriate within a range where it does not come into contact with the outer coil 60.
  • the connection wiring 81 is formed to extend from the first end 81A connected to the outer coil 60 toward the chip side surface 46.
  • the connection wiring 81 extends from the first end 60A of the outer coil 60 to the terminal portion 84 in a plan view.
  • a first end 81A of the connection wiring 81 is electrically connected to a first end 60A of the outer coil 60 via a via 82.
  • the second end 81B of the connection wiring 81 is electrically connected to the terminal portion 84 via the via 83.
  • the second insulating layer 52U includes an opening 52U1 that exposes the second end 60B of the outer coil 60 and an opening 52U2 that exposes a part of the wiring section 80.
  • Wires W13A and W13B are connected to the second end 60B and the terminal portion 84 exposed through the openings 52U1 and 52U2. That is, it can be said that the second end 60B and the terminal portion 84 exposed through the openings 52U1 and 52U2 are connection pads that connect the wires W13A and W13B.
  • wires W13A and W13B are connected to the first chip 31. Therefore, the second end 60B and the terminal portion 84 exposed through the openings 52U1 and 52U2 can also be called connection pads that connect the transformer 40 to the first chip 31.
  • the second insulating layer 52U includes a plurality of openings 52U3 and 52U4 that expose a portion of the inner coil 70.
  • the opening 52U3 is formed to expose the first end 70A of the inner coil 70.
  • the opening 52U4 is formed to expose the second end 70B of the inner coil 70.
  • a wire W15A is connected to the first end 70A of the inner coil 70 exposed through the opening 52U3.
  • a wire W15B is connected to the second end 70B of the inner coil 70 exposed through the opening 52U4. That is, it can be said that the first end 70A exposed through the opening 52U3 and the second end 70B exposed through the opening 52U4 are connection pads that connect the wires W15A and W15B.
  • These wires W15A and W15B are connected to the second chip 32, as shown in FIG. Therefore, the first end 70A and the second end 70B exposed through the openings 52U3 and 52U4 can also be called connection pads that connect the transformer 40 to the second chip 32.
  • the outer coil 60 and the inner coil 70 are electrically insulated from each other and configured to be magnetically coupled.
  • the transformer 40 of the first embodiment is configured such that the outer coil 60 and the inner coil 70 can be magnetically coupled along a plane parallel to the upper surface 51S of the substrate 51.
  • the inner coil 70 is arranged inside the outer coil 60. Therefore, a current flows in the inner coil 70 in a direction that corresponds to the direction of the magnetic flux generated by the current flowing in the outer coil 60.
  • the inner coil 70 and the outer coil 60 are arranged at the same position in the z direction and on the same plane perpendicular to the thickness direction of the first insulator 52. Therefore, the distance D70 from the substrate 51 to the inner coil 70 is equal to the distance D60 from the substrate 51 to the outer coil 60.
  • connection wiring 81 of the wiring section 80 connected to the outer coil 60 is arranged below the outer coil 60. Therefore, the distance D80 from the substrate 51 to the connection wiring 81 is smaller than the distance D60 from the substrate 51 to the outer coil 60 and the distance D70 from the substrate 51 to the inner coil 70. Therefore, in the transformer 40 of the first embodiment, the distance D80 from the substrate 51 to the connection wiring 81 is the second shortest distance between the outer coil 60 and the inner coil 70 and the substrate 51 in the thickness direction.
  • the distances D11 and D12 between the outer coil 60 and the inner coil 70 are equal to each other.
  • the distances D11 and D12 are the first shortest distances between the outer coil 60 and the inner coil 70.
  • the distances D11 and D12 can be, for example, 10 ⁇ m or more and 20 ⁇ m or less.
  • the distance from the substrate 51 to the outer coil 60 and the inner coil 70 in the z direction is the thickness T52 of the first insulator 52.
  • the distance from the upper surface 53S to the lower surface 53R is the thickness T53 of the second insulator 53.
  • the thickness T52 of the first insulator 52 is thicker than the thickness T53 of the second insulator 53.
  • the thickness T52 of the first insulator 52 and the thickness T53 of the second insulator 53 can be set according to the dielectric strength voltage of the transformer 40.
  • the thickness T52 of the first insulator 52 and the thickness of the second insulator 53 are set such that the total value of the second shortest distance D80 and the thickness T53 of the second insulator 53 is equal to or greater than the first shortest distance D11, D12.
  • the distance T53 and the distances D11 and D12 between the outer coil 60 and the inner coil 70 can be set.
  • the thickness T52 of the first insulator 52, specifically the distance D70 to the coil (inner coil 70 in the first embodiment) electrically connected to the second chip 32, can be 5 ⁇ m or more and 10 ⁇ m or less.
  • the thickness T53 of the second insulator 53 can be 5 ⁇ m or more and 10 ⁇ m or less.
  • the configuration of the transformer 40 can be changed as appropriate depending on the relationship among the first shortest distances D11 and D21, the second shortest distance D80, and the thickness T53 of the second insulator 53.
  • the thickness T52 of the first insulator 52 and the thickness T53 of the second insulator 53 may be made equal.
  • the thickness T53 of the second insulator 53 may be made thicker than the thickness of the first insulator 52.
  • FIG. 6 shows a cross-sectional structure of a transformer 40X of a comparative example.
  • the transformer 40X of the comparative example includes only the first insulator 52 on the substrate 51 and does not include the second insulator 53.
  • the primary coil 16X and the secondary coil 17X are arranged in an overlapping manner in the thickness direction of the first insulator 52 on the substrate 51.
  • the transformer 40X of the comparative example includes a primary coil 16X and a secondary coil 17X that are arranged to be magnetically coupled in the thickness direction of the first insulator 52.
  • the dielectric strength of the comparative example transformer 40X is determined by the distance between the primary coil 16X and the secondary coil 17X.
  • warpage occurs in the substrate 51 and the first insulator 52 due to the stress in the substrate 51 and the first insulator 52 due to the difference between the material of the substrate 51 and the material of the first insulator 52.
  • the transformer 40 of the first embodiment includes a first insulator 52 provided on a substrate 51 and a second insulator 53 provided below the substrate 51.
  • the first insulator 52 is in contact with the upper substrate surface 51S of the substrate 51
  • the second insulator 53 is in contact with the lower substrate surface 51R of the substrate 51. Therefore, the stress generated by the first insulator 52 in contact with the substrate upper surface 51S and the stress generated by the second insulator 53 in contact with the substrate lower surface 51R cancel each other out with respect to the substrate 51, thereby reducing stress in the transformer 40. Therefore, warpage of the transformer 40 can be reduced.
  • the first insulator 52 and the second insulator 53 are made of the same material. Therefore, stress in the transformer 40 can be further reduced compared to the case where the first insulator 52 and the second insulator 53 are made of different materials. Thereby, the warpage of the substrate 51, that is, the warpage of the transformer 40 can be further reduced.
  • the transformer 40 of the first embodiment includes the second insulator 53, thereby canceling out the stress caused by the first insulator 52, thereby reducing the stress in the transformer 40. Therefore, the thicknesses T52 and T53 of the first insulator 52 and the second insulator 53 can be made thicker than the transformer 40X of the comparative example. Thereby, the dielectric strength voltage of the transformer 40 can be further improved.
  • the transformer 40 is mounted on the first die pad 21.
  • the potential of the first die pad 21 is equal to the common voltage of the first chip 31 mounted on the first die pad 21.
  • the substrate 51 is sandwiched between a first insulator 52 and a second insulator 53. Therefore, the substrate 51 is electrically at a floating potential from the first chip 31 and the second chip 32. In other words, the substrate 51 is electrically floating.
  • the outer coil 60 and the inner coil 70 are arranged closer to the upper surface of the first insulator 52.
  • parasitic capacitors C11 and C12 are generated between the outer coil 60 and the substrate 51 and between the inner coil 70 and the substrate 51.
  • a parasitic capacitor C53 is generated between the first die pad 21 and the conductive bonding material 26 and the substrate 51.
  • the outer coil 60 (the primary coil 16 shown in FIG. 1) is electrically connected to the first chip 31 including the primary circuit 13. Both the first chip 31 and the transformer 40 are mounted on the first die pad 21. Therefore, the common voltage of the substrate 51 of the transformer 40 and the primary circuit 13 of the first chip 31 is the same.
  • the inner coil 70 (the secondary coil 17 shown in FIG. 1) is electrically connected to the second chip 32 including the secondary circuit 14. Therefore, the inner coil 70 has the same common voltage as the secondary circuit 14.
  • the potential of the substrate 51 is a voltage obtained by dividing the common voltage of the first die pad 21 and the common voltage of the inner coil 70 by the capacitance values of the parasitic capacitors C53 and C12.
  • the dielectric strength voltage of the transformer 40 of the first embodiment can be increased from that of the transformer of the comparative example. It can be twice the dielectric strength voltage.
  • the outer coil 60 and the inner coil 70 are arranged at the same position in the thickness direction of the first insulator 52 and on the same plane perpendicular to the thickness direction.
  • the dielectric strength between the outer coil 60 and the inner coil 70 is determined by the first shortest distances D11 and D12 between the outer coil 60 and the inner coil 70.
  • the first shortest distances D11 and D12 can be adjusted by the shapes of the outer coil 60 and the inner coil 70, that is, the layout design of the transformer 40. That is, the dielectric strength between the outer coil 60 and the inner coil 70 of the transformer 40 can be adjusted by designing the layout of the transformer 40. Therefore, the dielectric strength voltage of the transformer 40 can be easily changed.
  • the wiring resistance values of the outer coil 60 and the inner coil 70 affect the amount of current flowing through the outer coil 60 and the inner coil 70, respectively, and the degree of magnetic coupling.
  • the wiring resistance value of the outer coil 60 is obtained by widening the wiring width of the outer coil 60 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the wiring resistance value of the inner coil 70 can be obtained by widening the wiring width of the inner coil 70 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the primary coil 16X and the secondary coil 17X are arranged in the thickness direction of the first insulator 52. Therefore, if the wiring width of the primary coil 16X and the secondary coil 17X is increased when viewed from the thickness direction of the first insulator 52, the opposing area of the primary coil 16X and the secondary coil 17X increases. Therefore, the capacitance value of the parasitic capacitor increases.
  • the outer coil 60 and the inner coil 70 face each other in the x direction and the y direction. Therefore, even if the wiring width is increased, the facing area of the outer coil 60 and the inner coil 70 does not change. That is, the capacitance values of the parasitic capacitors C11 and C12 between the outer coil 60 and the inner coil 70 do not change. That is, compared to the transformer 40X of the comparative example, the wiring resistance value can be reduced without increasing the capacitance value of the parasitic capacitors C11 and C12 between the coils. As a result, current flows more easily in the outer coil 60 and inner coil 70 of the transformer 40, so that the amount of magnetic flux generated in the transformer 40 can be increased. In the transformer 40, it is possible to improve the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70, and thus to improve the transfer characteristics.
  • the transformer 40 of the first embodiment provides the following effects.
  • (1-1) The transformer 40 of the first embodiment includes a first insulator 52 provided on a substrate 51 and a second insulator 53 provided below the substrate 51.
  • the first insulator 52 is in contact with the upper substrate surface 51S of the substrate 51
  • the second insulator 53 is in contact with the lower substrate surface 51R of the substrate 51. Therefore, the stress generated by the first insulator 52 in contact with the substrate upper surface 51S and the stress generated by the second insulator 53 in contact with the substrate lower surface 51R cancel each other out with respect to the substrate 51, thereby reducing stress in the transformer 40. Therefore, warpage of the transformer 40 can be reduced.
  • the first insulator 52 and the second insulator 53 are made of the same material. Therefore, stress in the transformer 40 can be further reduced compared to the case where the first insulator 52 and the second insulator 53 are made of different materials. Thereby, the warpage of the substrate 51, that is, the warpage of the transformer 40 can be further reduced.
  • the transformer 40 of the first embodiment includes the second insulator 53, thereby canceling out stress caused by the first insulator 52, thereby reducing stress in the transformer 40. Therefore, the thicknesses T52 and T53 of the first insulator 52 and the second insulator 53 can be made thicker than the transformer 40X of the comparative example. Thereby, the dielectric strength voltage of the transformer 40 can be further improved.
  • a parasitic capacitor C53 is generated between the substrate 51 and the first die pad 21 (bonding material 26), and a parasitic capacitor C12 is generated between the substrate 51 and the inner coil 70. Therefore, the potential of the substrate 51 is a voltage obtained by dividing the common voltage of the first die pad 21 and the common voltage of the inner coil 70 by the capacitance values of the parasitic capacitors C53 and C12.
  • the dielectric strength voltage of the transformer 40 of the first embodiment can be increased from that of the transformer 40X of the comparative example. It can be twice the dielectric strength voltage.
  • the outer coil 60 and the inner coil 70 are arranged at the same position in the thickness direction of the first insulator 52 and on the same plane perpendicular to the thickness direction.
  • the dielectric strength between the outer coil 60 and the inner coil 70 is determined by the first shortest distances D11 and D12 between the outer coil 60 and the inner coil 70.
  • the first shortest distances D11 and D12 can be adjusted by the shapes of the outer coil 60 and the inner coil 70, that is, the layout design of the transformer 40. That is, the dielectric strength between the outer coil 60 and the inner coil 70 of the transformer 40 can be adjusted by designing the layout of the transformer 40. Therefore, the dielectric strength voltage of the transformer 40 can be easily changed.
  • the wiring resistance values of the outer coil 60 and the inner coil 70 affect the amount of current flowing through the outer coil 60 and the inner coil 70, respectively, and the degree of magnetic coupling.
  • the wiring resistance value of the outer coil 60 is obtained by widening the wiring width of the outer coil 60 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the wiring resistance value of the inner coil 70 can be obtained by widening the wiring width of the inner coil 70 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the outer coil 60 and the inner coil 70 face each other in the x direction and the y direction. Therefore, even if the wiring width is increased, the facing area of the outer coil 60 and the inner coil 70 does not change. That is, the capacitance values of the parasitic capacitors C11 and C12 between the outer coil 60 and the inner coil 70 do not change. That is, compared to the transformer 40X of the comparative example, the wiring resistance value can be reduced without increasing the capacitance value of the parasitic capacitors C11 and C12 between the coils. As a result, current flows more easily in the outer coil 60 and inner coil 70 of the transformer 40, so that the amount of magnetic flux generated in the transformer 40 can be increased. In the transformer 40, it is possible to improve the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70, and thus to improve the transfer characteristics.
  • the first embodiment described above can be modified as follows, for example.
  • the first embodiment and each of the following modified examples can be combined with each other as long as no technical contradiction occurs.
  • the same parts as in the first embodiment are given the same reference numerals as in the first embodiment, and the explanation thereof will be omitted.
  • the modified transformer 40A shown in FIG. 7 includes an outer coil 60 formed on two first insulating layers 527 and 529.
  • the outer coils 60 of the first insulating layers 527 and 529 are connected in parallel by vias 65.
  • the wiring resistance value of the outer coils 60 can be reduced. Note that the number of first insulating layers forming the outer coil 60 can be three or more.
  • the transformer 40A includes two inner coils 70 formed on the two first insulating layers 527 and 529.
  • the inner coils 70 of the first insulating layers 527 and 529 are connected in parallel by vias 75 .
  • the wiring resistance value of the inner coils 70 can be reduced. Note that the number of first insulating layers forming the inner coil 70 can be three or more.
  • the modified transformer 40B shown in FIGS. 8 and 9 includes an outer coil 60 and an outer coil 63 connected to the outer coil 60.
  • the outer coil 63 is arranged so as to overlap the outer coil 60 when viewed from the z direction.
  • the outer coil 63 includes coil portions 631 and 632 formed in two first insulating layers 527 and 529, respectively.
  • the coil portions 631 and 632 are connected in series between the outer coil 60 and the wiring portion 80 by vias 65 .
  • an outer coil 63 is connected between the wiring section 80 and the outer coil 60. Therefore, the number of turns of the outer coil 60 can be increased. Thereby, the amount of magnetic flux generated by the outer coil 60 can be increased.
  • outer coils 63 (631, 632) formed on the two first insulating layers 527, 529 may be connected in parallel. Further, the outer coil 60 may be formed in a plurality of first insulating layers and connected in parallel, as shown in FIG. 7 . By connecting the outer coil 60 and the outer coil 63 in parallel in this manner, it is possible to increase the number of turns and suppress an increase in the wiring resistance value.
  • the inner coil 70 is disposed on the first insulating layer 529.
  • the first insulating layer on which the inner coil 70 is placed can be arbitrarily changed.
  • the modified transformer 40C shown in FIG. 10 differs from the transformer 40B shown in FIG.
  • the coil portion 631 is arranged so as not to overlap with the coil portion 631 when viewed from the z direction.
  • the inner coil 70 is arranged in a first insulating layer 525 different from the first insulating layer 527 in which the outer coil 60 is arranged.
  • the inner coil 70 only needs to be arranged in a first insulating layer different from the first insulating layer 527 in which the outer coil 60 is arranged, and may be arranged in the first insulating layer 526, for example.
  • the first embodiment described above is embodied in a signal transmission device that transmits signals using the transformer 40.
  • the transformer 40 may be configured as a transmission device (power transmission device) that transmits power.
  • FIG. 12 is a circuit diagram illustrating an example of the configuration of a modified power transmission device 300.
  • This power transmission device 300 includes a control circuit 301, an oscillator 302, a transformer 15 (40), diodes 303, 304, 305, 306, and a smoothing capacitor 307.
  • Control circuit 301, oscillator 302, transformer 15 (40), diodes 303 to 306, and smoothing capacitor 307 are sealed with sealing resin 28, similar to signal transmission device 10 of the first embodiment.
  • a DC power supply 311 is connected to the control circuit 301.
  • Oscillator 302 is controlled by control circuit 301 and outputs an AC signal.
  • This AC signal is transmitted by transformer 40.
  • a DC voltage is supplied to the load 312 by diodes 303 to 306 and a smoothing capacitor 307. That is, this power transmission device 300 works as a DC voltage conversion circuit (DC-DC converter) that converts the voltage of the DC power supply 311 into the operating voltage of the load 312.
  • DC-DC converter DC voltage conversion circuit
  • FIG. 13 is a circuit diagram showing an example of the configuration of a power transmission device according to a modification.
  • This power transmission device 320 includes a control circuit 301, an oscillator 302, two transformers 40, diodes 304 and 306, and a smoothing capacitor 307.
  • a neutral point between the secondary coils 17 of the two transformers 40 is electrically connected to the secondary terminal 322B.
  • a load 312 is connected to the secondary terminals 322A and 322B.
  • This power transmission device 320 works as a direct current voltage conversion circuit (DC-DC converter) that converts the voltage of the direct current power supply 311 into the operating voltage of the load 312.
  • DC-DC converter direct current voltage conversion circuit
  • the shapes of the outer coil 60 and the inner coil 70 in plan view can be arbitrarily changed.
  • the outer coil 60 and the inner coil 70 may be formed into a rectangular shape.
  • the outer coil 60 and the inner coil 70 may be formed into a rectangular shape with rounded corners.
  • the outer coil 60 and the inner coil 70 may be formed in an elliptical shape.
  • the wire W13B can also be configured to be directly connected to the outer coil 60.
  • the distance between the first end 60A of the outer coil 60 and the inner coil 70 (inner coil 70) is greater than or equal to the distance required for the dielectric strength of the transformer 40.
  • the wire W13B can be connected to the first end 60A of the outer coil 60.
  • FIG. 14 is a circuit diagram schematically showing the configuration of a signal transmission device including a transformer according to the second embodiment.
  • FIG. 15 is a schematic plan view schematically showing the signal transmission device of FIG. 14.
  • the second embodiment is configured as a signal transmission device 110 including a transformer 115.
  • the signal transmission device 110 is a device that transmits a pulse signal while electrically insulating between the primary terminal 11 and the secondary terminal 12.
  • Signal transmission device 110 is, for example, a digital isolator.
  • the signal transmission device 110 includes a primary circuit 13 electrically connected to the primary terminal 11, a secondary circuit 14 electrically connected to the secondary terminal 12, and the primary circuit 13.
  • a transformer 115 that electrically isolates the secondary circuit 14 is included.
  • the primary side circuit 13 is a circuit configured to operate when the first voltage V1 is applied.
  • the primary circuit 13 is electrically connected to, for example, an external control device (not shown).
  • the primary circuit 13 includes a transmitting circuit 13T.
  • the secondary side circuit 14 is a circuit configured to operate when a second voltage V2 different from the first voltage V1 is applied.
  • the second voltage V2 is higher than the first voltage V1, for example.
  • the first voltage V1 and the second voltage V2 are DC voltages.
  • the secondary circuit 14 is electrically connected to, for example, a drive circuit that is controlled by a control device.
  • An example of a drive circuit is a switching circuit.
  • the secondary circuit 14 includes a receiving circuit 14R. A ground for the primary circuit 13 and a ground for the secondary circuit 14 are provided independently.
  • the transformer 115 is connected between the transmitting circuit 13T and the receiving circuit 14R.
  • Transformer 115 includes a primary coil 16 and a secondary coil 17.
  • the secondary coil 17 includes a first coil 17A and a second coil 17B.
  • the first coil 17A and the second coil 17B are electrically connected to each other. Thereby, the first coil 17A and the second coil 17B of the secondary coil 17 are connected in series to the receiving circuit 14R.
  • a control signal from, for example, a control device is input to the transmission circuit 13T of the primary side circuit 13 through the primary side terminal 11.
  • the control signal is received by the receiving circuit 14R of the secondary circuit 14 from the transmitting circuit 13T of the primary circuit 13 via the transformer 115.
  • the signal transmitted to the secondary circuit 14 is output from the secondary circuit 14 to the drive circuit through the secondary terminal 12.
  • the primary side circuit 13 and the secondary side circuit 14 are electrically insulated by the transformer 115. More specifically, while the transformer 115 restricts the transmission of DC voltage between the primary circuit 13 and the secondary circuit 14, it allows the transmission of pulse signals.
  • the state where the primary side circuit 13 and the secondary side circuit 14 are insulated refers to the state where the transmission of DC voltage is cut off between the primary side circuit 13 and the secondary side circuit 14. This means that transmission of pulse signals from the primary circuit 13 to the secondary circuit 14 is permitted. In this way, the secondary circuit 14 is configured to receive the signal from the primary circuit 13.
  • the dielectric strength voltage of the signal transmission device 110 is, for example, 2500 Vrms or more and 7500 Vrms or less.
  • the dielectric strength voltage of the signal transmission device 110 of the second embodiment is approximately 5700 Vrms.
  • the specific value of the dielectric strength voltage of the signal transmission device 110 is not limited to this and is arbitrary.
  • the signal transmission device 110 is a semiconductor device in which a plurality of semiconductor chips are packaged into one.
  • the package format of the signal transmission device 110 is, for example, SO type, and in the second embodiment is SOP. Note that the package format of the signal transmission device 110 can be changed arbitrarily.
  • the signal transmission device 110 includes a first chip 31, a second chip 32, and a transformer 140 as semiconductor chips.
  • the first chip 31 includes the primary side circuit 13 shown in FIG.
  • the second chip 32 includes the secondary side circuit 14 shown in FIG.
  • Transformer 140 includes transformer 115 (primary coil 16 and secondary coil 17) shown in FIG.
  • the signal transmission device 110 includes a first die pad 21 and a second die pad 22. Both the first die pad 21 and the second die pad 22 are formed into a flat plate shape. Both the first die pad 21 and the second die pad 22 are made of a conductive material.
  • each die pad 21, 22 is formed of a material containing Cu. Note that each die pad 21, 22 may be formed of other metal materials such as Al. Moreover, the material constituting each die pad 21, 22 is not limited to a conductive material.
  • each die pad 21, 22 may be made of ceramic such as alumina. That is, each die pad 21, 22 may be formed of a material having electrical insulation properties.
  • the first die pad 21 and the second die pad 22 are arranged side by side and spaced apart from each other.
  • the arrangement direction of the first die pad 21 and the second die pad 22 is defined as the x direction.
  • the direction orthogonal to the x direction is defined as the y direction. Note that in the following description, plan view means viewing from the z direction.
  • the first chip 31 and transformer 140 are mounted on the first die pad 21.
  • the first chip 31 and the transformer 140 are bonded to the first die pad 21 by bonding materials 25 and 26.
  • the bonding materials 25 and 26 are, for example, conductive bonding materials such as solder and Ag paste. Note that as the bonding materials 25 and 26, an insulating bonding material such as epoxy resin may be used.
  • the bonding material 25 of the first chip 31 and the bonding material 26 of the transformer 140 may be different types of bonding materials.
  • the second chip 32 is mounted on the second die pad 22.
  • the second chip 32 is bonded to the second die pad 22 by a bonding material 27.
  • the bonding material 27 is, for example, a conductive bonding material such as solder or Ag paste. Note that as the bonding material 27, an insulating bonding material such as epoxy resin may be used.
  • the signal transmission device 110 includes a plurality of primary leads 23 and a plurality of secondary leads 24.
  • FIG. 15 shows four primary leads 23A to 23D and four secondary leads 24A to 24D.
  • the primary leads 23A and 23D are connected to the first die pad 21.
  • the primary leads 23B and 23C are connected to the first chip 31 by primary wires W11A and W11B.
  • the primary leads 23B and 23C are used for supplying operating voltage to the first chip 31, inputting signals, and the like.
  • the primary lead 23B or the primary lead 23C is used as the primary terminal 11 shown in FIG.
  • the first chip 31 is connected to the first die pad 21 by a wire W12.
  • the number, shape, connection state, etc. of the primary leads 23 can be changed as appropriate.
  • Wires W11A, W11B, and W12 are bonding wires formed by a wire bonding device.
  • the wires W11A, W11B, and W12 are made of a conductor such as Au, Al, or Cu
  • the secondary leads 24A and 24D are connected to the second die pad 22.
  • the secondary leads 24B and 24C are connected to the second chip 32 by secondary wires W17A and W17B.
  • the secondary leads 24B and 24C are used for supplying operating voltage to the second chip 32, outputting signals, and the like.
  • the secondary lead 24B or the secondary lead 24C is used as the secondary terminal 12 shown in FIG. 14.
  • the second chip 32 is connected to the second die pad 22 by a wire W16.
  • the number, shape, connection state, etc. of the secondary leads 24 can be changed as appropriate.
  • Wires W16, W17A, and W17B are bonding wires formed by a wire bonding device.
  • the wires W16, W17A, and W17B are made of a conductor such as Au, Al, or Cu.
  • the first chip 31 is connected to the transformer 140 by wires W13A and W13B.
  • the transformer 140 is connected to the second chip 32 by wires W15A and W15B.
  • a wire W14 serving as a connecting member is connected to the transformer 140.
  • Wires W13A, W13B, W14, W15A, and W15B are bonding wires formed by a wire bonding device.
  • the wires W13A, W13B, W14, W15A, and W15B are made of a conductor such as Au, Al, or Cu.
  • the signal transmission device 110 further includes a sealing resin 28.
  • the sealing resin 28 seals a portion of each die pad 21, 22, each chip 31, 32, a transformer 140, and each lead 23, 24.
  • the sealing resin 28 is made of an electrically insulating material. A black epoxy resin is used as an example of such a material.
  • the sealing resin 28 is formed into a rectangular plate shape with the thickness direction in the z direction.
  • the transformer 140 is mounted on the first die pad 21. That is, both the transformer 140 and the first chip 31 are mounted on the first die pad 21.
  • the transformer 140 and the first chip 31 are spaced apart from each other in the x direction on the first die pad 21 . Therefore, it can be said that the first chip 31, the transformer 140, and the second chip 32 are arranged apart from each other in the x direction.
  • the first chip 31, the transformer 140, and the second chip 32 are arranged in this order. In other words, the transformer 140 is arranged between the first chip 31 and the second chip 32 in the x direction.
  • the distance between the first die pad 21 and the second die pad 22 in the x direction is larger than the distance between the first chip 31 and the transformer 140 in the x direction. Therefore, the distance between the first chip 31 and the transformer 140 is smaller than the distance between the transformer 140 and the second chip 32 in the x direction. In other words, the transformer 140 is placed closer to the first chip 31 than the second chip 32.
  • FIG. 16 is a schematic plan view of the transformer 140. 17 is a sectional view taken along the line F17-F17 in FIG. 16, and FIG. 18 is a sectional view taken along the line F18-F18 in FIG. In FIG. 16, the outer coil 60 and the inner coil 70 are shown in solid lines for easy understanding.
  • the transformer 140 is a transformer chip that includes an outer coil 60 and an inner coil 70.
  • the primary coil 16 shown in FIG. 14 includes an outer coil 60.
  • the secondary coil 17 shown in FIG. 14 includes an inner coil 70.
  • the secondary coil 17 includes a first coil 17A and a second coil 17B.
  • the inner coil 70 includes a first inner coil 71 that functions as the first coil 17A, and a second inner coil 72 that functions as the second coil 17B.
  • the transformer 140 includes a chip main surface 141 and a chip back surface 142 facing away from the chip main surface 141. Further, the transformer 140 includes four chip side surfaces 143, 144, 145, and 146 perpendicular to both the chip main surface 141 and the chip back surface 142.
  • the chip side surfaces 143 and 144 constitute both end surfaces of the transformer 140 in the x direction.
  • the chip side surfaces 145 and 146 constitute both end surfaces of the transformer 140 in the y direction.
  • the transformer 140 includes a substrate 51, a first insulator 52 disposed on the substrate 51, and a second insulator 53 disposed below the substrate 51.
  • the substrate 51 has a substrate upper surface 51S and a substrate lower surface 51R facing oppositely to each other in the z direction.
  • the substrate 51 is made of, for example, a semiconductor substrate.
  • the substrate 51 is a substrate made of a material containing Si. Examples of the Si substrate used for the substrate 51 include a semiconductor substrate made of a single-crystal intrinsic semiconductor material, a p-type semiconductor substrate containing acceptor-type impurities, and an n-type semiconductor substrate containing donor-type impurities.
  • the substrate 51 may be made of a wide bandgap semiconductor or a compound semiconductor as a semiconductor substrate. Furthermore, instead of the semiconductor substrate, the substrate 51 may be an insulating substrate made of a material containing glass.
  • a wide band gap semiconductor is a semiconductor substrate having a band gap of 2.0 eV or more.
  • the wide bandgap semiconductor may be SiC, GaN , Ga2O3 , etc.
  • the compound semiconductor may be a III-V compound semiconductor.
  • the compound semiconductor may include at least one of AlN, InN, GaN, and GaAs.
  • the first insulator 52 is formed on the substrate 51.
  • the first insulator 52 is in contact with the top surface 51S of the substrate 51.
  • the first insulator 52 includes a lower surface 52R in contact with the substrate 51 and an upper surface 52S on the opposite side of the lower surface 52R.
  • the upper surface 52S of the first insulator 52 constitutes a chip main surface 141 of the transformer 140.
  • the first insulator 52 of the second embodiment includes an uppermost insulating layer 52U and insulating layers 521 to 527 between the uppermost insulating layer 52U and the substrate 51.
  • the insulating layers 521 to 527, 52U are laminated in the z direction from the top surface 51S of the substrate 51. Therefore, it can be said that the z direction is the thickness direction of the first insulator 52. Further, the z direction can also be said to be the lamination direction of the plurality of insulating layers 521 to 527, 52U included in the first insulator 52.
  • the lowermost insulating layer 521 is in contact with the upper substrate surface 51S of the substrate 51.
  • the upper surface of the uppermost insulating layer 52U constitutes a chip main surface 141 of the transformer 140.
  • the uppermost insulating layer 52U of the plurality of insulating layers 521 to 527, 52U will be referred to as the second insulating layer 52U, and the insulating layers 521 to 527 excluding the second insulating layer 52U will be referred to as the first insulating layer. May be shown as 521-527.
  • the first insulating layers 521 to 527 are made of, for example, a material containing Si. As the material containing Si, SiO 2 , SiN, SiC, SiCN, etc. can be used. Note that at least one of the first insulating layers 521 to 527 may be made of a different material. Furthermore, at least one of the first insulating layers 521 to 527 may be formed by laminating a plurality of films.
  • the first insulating layers 521 to 527 may be composed of a thin film made of a material containing SiN, SiC, SiCN, etc., and an interlayer insulating film made of a material containing SiO 2 .
  • the second insulating layer 52U is made of, for example, a material containing resin having electrical insulation properties.
  • the second insulating layer 52U is formed of, for example, a passivation film including a nitride film and a resin film having electrical insulation properties.
  • the nitride film includes materials such as Si 3 N 4 , SiN, and SiCN, for example.
  • the resin film contains, for example, polyimide. Note that the second insulating layer 52U may be formed of a material containing Si, similar to the first insulating layers 521 to 527.
  • the second insulator 53 is formed under the substrate 51.
  • the second insulator 53 is in contact with the lower surface 51R of the substrate 51.
  • the second insulator 53 includes an upper surface 53S in contact with the substrate lower surface 51R of the substrate 51, and a lower surface 53R on the opposite side to the upper surface 53S.
  • the lower surface 53R of the second insulator 53 constitutes a chip back surface 142 of the transformer 140.
  • the second insulator 53 of the first embodiment includes a plurality of insulating layers 531 to 534.
  • the plurality of insulating layers 531 to 534 are stacked in the z direction from the bottom surface 51R of the substrate 51. Therefore, it can be said that the z direction is the thickness direction of the second insulator 53. Further, the z direction can also be said to be the lamination direction of the plurality of insulating layers 531 to 534 included in the second insulator 53.
  • the uppermost insulating layer 531 is in contact with the lower substrate surface 51R of the substrate 51.
  • the lower surface of the lowermost insulating layer 534 constitutes a chip back surface 142 of the transformer 140.
  • the second insulator 53 can be formed of the same material as the first insulator 52.
  • the insulating layers 531 to 534 of the second insulator 53 are made of, for example, a material containing Si.
  • the material containing Si, SiO 2 , SiN, SiC, SiCN, etc. can be used.
  • at least one of the insulating layers 531 to 534 may be made of a different material.
  • at least one of the insulating layers 531 to 534 may be formed by stacking a plurality of films.
  • the insulating layers 531 to 534 may be composed of a thin film formed of a material containing SiN, SiC, SiCN, etc., and an interlayer insulating film formed of a material containing SiO 2 .
  • the insulating layers 531 to 534 may be formed as one insulating layer without being distinguished from each other.
  • the second insulator 53 can also be formed of a different material from the first insulator 52.
  • the insulating layers 531 to 534 of the second insulator 53 may be formed of, for example, a material containing electrically insulating resin. As this material, for example, a material containing polyimide can be used.
  • transformer 140 includes an outer coil 60 and an inner coil 70. As shown in FIG. 17, outer coil 60 and inner coil 70 are embedded in first insulator 52.
  • the outer coil 60 includes a first outer coil 61 and a second outer coil 62.
  • the first outer coil 61 includes a first end 61A and a second end 61B opposite to the first end 61A.
  • the second outer coil 62 includes a first end 62A and a second end 62B opposite to the first end 62A.
  • the second end 61B of the first outer coil 61 and the second end 62B of the second outer coil 62 are electrically connected to each other.
  • the first outer coil 61 and the second outer coil 62 are each formed in a circular spiral shape in plan view.
  • the first outer coil 61 and the second outer coil 62 are connected to each other when a current flows from a first end of one of the first outer coil 61 and second outer coil 62 to a first end of the other outer coil. They are wound so that magnetic fluxes are generated in opposite directions.
  • the first outer coil 61 and the second outer coil 62 have a symmetrical shape, and are formed in a point symmetrical shape.
  • the first end 61A is arranged inside the spiral, and the second end 61B is arranged outside the spiral. That is, the first outer coil 61 is wound in a spiral shape with the first end 61A as the inner end and the second end 61B as the outer end.
  • the first end 62A is located inside the spiral, and the second end 62B is located outside the spiral.
  • the second outer coil 62 is wound in a spiral shape, with the first end 62A being the inner end and the second end 62B being the outer end.
  • the first outer coil 61 and the second outer coil 62 are electrically connected to each other at second ends 61B and 62B, which are the respective outer peripheral edge portions.
  • both the first outer coil 61 and the second outer coil 62 of the outer coil 60 have a first insulating layer 527 which is the uppermost layer among the plurality of first insulating layers 521 to 527. It is set in. That is, the outer coil 60 (first outer coil 61, second outer coil 62) is arranged closer to the upper surface 52S of the first insulator 52.
  • the outer coil 60 is formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the outer coil 60 of the second embodiment is made of a material containing Al.
  • Inner coil 70 includes a first inner coil 71 and a second inner coil 72.
  • the first inner coil 71 includes a first end 71A and a second end 71B opposite to the first end 71A.
  • the second inner coil 72 includes a first end 72A and a second end 72B opposite to the first end 71A.
  • the first inner coil 71 is arranged inside the first outer coil 61.
  • the first inner coil 71 is arranged so as not to overlap the first outer coil 61 in plan view.
  • the second inner coil 72 is arranged inside the second outer coil 62.
  • the second inner coil 72 is arranged so as not to overlap the second outer coil 62 in plan view.
  • the first inner coil 71 and the second inner coil 72 are each formed in a circular spiral shape in plan view.
  • the first inner coil 71 and the second inner coil 72 have a symmetrical shape, and are formed in a point symmetrical shape.
  • the first inner coil 71 In the spiral-shaped first inner coil 71, the first end 71A is arranged inside the spiral, and the second end 71B is arranged outside the spiral. That is, the first inner coil 71 is wound in a spiral shape with the first end 71A as the inner end and the second end 71B as the outer end. Similarly, in the spiral second inner coil 72, the first end 72A is located inside the spiral, and the second end 72B is located outside the spiral. In other words, the second inner coil 72 is wound in a spiral shape with the first end 72A as the inner end and the second end 72B as the outer end. Note that the first inner coil 71 and the second inner coil 72 may have first ends 71A, 72A as outer circumferential ends, and second ends 71B, 72B as inner circumferential ends.
  • both the first inner coil 71 and the second inner coil 72 of the inner coil 70 are provided on the first insulating layer 527, which is the uppermost layer among the plurality of first insulating layers 521 to 527. ing. That is, the inner coil 70 (first inner coil 71, second inner coil 72) is arranged closer to the upper surface 52S of the first insulator 52.
  • the first inner coil 71 and the second inner coil 72 are formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the inner coil 70 of the second embodiment is made of a material containing Al.
  • the transformer 140 includes a first wiring section 80 and a second wiring section 90.
  • the first wiring section 80 and the second wiring section 90 are electrically connected to the outer coil 60.
  • the first wiring portion 80 is electrically connected to the first end 61A of the first outer coil 61 of the outer coil 60.
  • the second wiring section 90 is electrically connected to the first end 62A of the second outer coil 62 of the outer coil 60.
  • the first wiring section 80 includes a connection wiring 81, vias 82 and 83, and a terminal section 84.
  • the first wiring section 80 is formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the terminal portion 84 is arranged near the chip side surface 143.
  • the terminal portion 84 is arranged at the same position in the y direction as the first end 61A of the first outer coil 61 in plan view. Note that the arrangement position of the terminal portion 84 may be changed arbitrarily.
  • connection wiring 81 is arranged below the first outer coil 61.
  • the connection wiring 81 is provided in the first insulating layer 525 two layers below the first insulating layer 527 on which the first outer coil 61 is provided.
  • the connection wiring 81 is formed to extend from the first end 81A connected to the first outer coil 61 toward the chip side surface 143.
  • the connection wiring 81 extends from the first end 61A of the first outer coil 61 to the terminal portion 84 in plan view.
  • the first end 81A of the connection wiring 81 is electrically connected to the first end 61A of the first outer coil 61 via the via 82.
  • the second end 81B of the connection wiring 81 is electrically connected to the terminal portion 84 via the via 83.
  • the second wiring section 90 includes a connection wiring 91, vias 92 and 93, and a terminal section 94.
  • the second wiring section 90 is formed of a material containing one or more appropriately selected from Ti, TiN, Au, Ag, Cu, Al, and W.
  • the connection wiring 91, vias 92, 93, and terminal portion 94 of the second wiring portion 90 are arranged in the same manner as the connection wiring 81, vias 82, 83, and terminal portion 84 of the first wiring portion 80.
  • connection wiring 91 The first end 91A of the connection wiring 91 is electrically connected to the first end 62A of the second outer coil 62 through the via 92, and the second end 91B of the connection wiring 91 is electrically connected to the terminal portion 94 through the via 93. It is connected.
  • the second insulating layer 52U includes openings 52U1 and 52U2 that expose portions of the first wiring section 80 and the second wiring section 90, respectively.
  • the openings 52U1 and 52U2 are formed to expose the terminal parts 84 and 94 of the first wiring part 80 and the second wiring part 90.
  • Wires W13A and W13B are connected to the terminal portions 84 and 94 exposed through the openings 52U1 and 52U2.
  • the terminal portions 84 and 94 exposed through the openings 52U1 and 52U2 can be said to be connection pads for connecting the wires W13A and W13B.
  • wires W13A and W13B are connected to the first chip 31. Therefore, the terminal portions 84 and 94 exposed through the openings 52U1 and 52U2 can also be called connection pads that connect the transformer 140 to the first chip 31.
  • the second insulating layer 52U includes a plurality of openings 52U3, 52U4, 52U5, and 52U6 that expose a portion of the inner coil 70.
  • the opening 52U3 is formed to expose the first end 71A of the first inner coil 71.
  • the opening 52U4 is formed to expose the second end 71B of the first inner coil 71.
  • the opening 52U5 is formed to expose the first end 72A of the second inner coil 72.
  • the opening 52U6 is formed to expose the second end 72B of the second inner coil 72.
  • the wire W15A is connected to the second end 71B of the first inner coil 71 exposed through the opening 52U4.
  • the first end W14A of the wire W14 is connected to the first end 71A of the first inner coil 71 exposed by the opening 52U3, and the second end W14B of the wire W14 is connected to the second inner coil 72 exposed by the opening 52U5. is connected to the first end 72A of.
  • a wire W15B is connected to the second end 72B of the second inner coil 72 exposed through the opening 52U6.
  • first ends 71A, 72A exposed through the openings 52U3, 52U5 and the second ends 71B, 72B exposed through the openings 52U4, 52U6 are connection pads that connect the wires W14, W15A, W15B.
  • the outer coil 60 and the inner coil 70 are electrically insulated from each other and configured to be magnetically coupled.
  • the transformer 140 of the second embodiment is configured such that the outer coil 60 and the inner coil 70 can be magnetically coupled along a plane parallel to the top surface 51S of the substrate 51.
  • the first inner coil 71 of the inner coil 70 is arranged inside the first outer coil 61 of the outer coil 60. Therefore, a current flows in the first inner coil 71 in a direction that corresponds to the direction of the magnetic flux generated by the current flowing in the first outer coil 61.
  • the second inner coil 72 of the inner coil 70 is arranged inside the second outer coil 62 of the outer coil 60. Therefore, a current flows in the second inner coil 72 in a direction that corresponds to the direction of the magnetic flux generated by the current flowing in the second outer coil 62.
  • the wire W14 connects the first inner coil 71 and the second inner coil 72. Therefore, the wire W14 is connected so that the current flowing through the first inner coil 71 and the current flowing through the second inner coil 72 are taken out by the wires W15A and W15B.
  • the direction of the current is the same as the direction of the current generated in the second inner coil 72. connected like this.
  • a wire W15A is connected to the second end 71B of the first inner coil 71 exposed through the opening 52U4. Further, a wire W15B is connected to the second end 72B of the second inner coil 72 exposed through the opening 52U6. These wires W15A and W15B are connected to the second chip 32, as shown in FIG. Therefore, the second ends 71B and 72B exposed through the openings 52U4 and 52U6 can also be called connection pads that connect the transformer 140 to the second chip 32.
  • the outer coil 60 includes a first outer coil 61 and a second outer coil 62.
  • the first outer coil 61 and the second outer coil 62 are formed on the same first insulating layer 527 among the first insulating layers 521 to 527 stacked on the substrate 51. Therefore, the distance D61 from the substrate 51 to the first outer coil 61 is equal to the distance D62 from the substrate 51 to the second outer coil 62.
  • the inner coil 70 includes a first inner coil 71 and a second inner coil 72.
  • the first inner coil 71 and the second inner coil 72 are formed on the same first insulating layer 527 among the first insulating layers 521 to 527 stacked on the substrate 51. Therefore, the distance D71 from the substrate 51 to the first inner coil 71 is equal to the distance D72 from the substrate 51 to the second inner coil 72.
  • the first inner coil 71 and the second inner coil 72 are arranged at the same position as the first outer coil 61 and the second outer coil 62 in the z direction. Therefore, the distances D71 and D72 from the substrate 51 to the first inner coil 71 and the second inner coil 72 are equal to the distances D61 and D62 from the substrate 51 to the first outer coil 61 and the second outer coil 62.
  • connection wires 81 and 91 of the first wiring section 80 and the second wiring section 90 connected to the outer coil 60 are arranged on the first insulating layer 525 under the outer coil 60. Therefore, the distance D80 from the board 51 to the connection wiring 81 is the distance D61, D62 from the board 51 to the first outer coil 61 and the second outer coil 62, and the distance D62 is from the board 51 to the first inner coil 71 and the second inner coil 72. is smaller than the distances D71 and D72. Further, the distance D90 from the substrate 51 to the connection wiring 91 is smaller than the distances D61, D62, D71, and D72.
  • the distance D80 is the shortest distance between the first outer coil 61 and the first inner coil 71 to the substrate 51 in the z direction.
  • the distance D90 is the shortest distance between the second outer coil 62 and the second inner coil 72 to the substrate 51 in the z direction.
  • the distances D11 and D12 between the first outer coil 61 and the first inner coil 71 are equal to each other.
  • the distances D11 and D12 are the first shortest distances between the first outer coil 61 and the first inner coil 71.
  • the distances D21 and D22 between the second outer coil 62 and the second inner coil 72 are equal to each other.
  • the distances D21 and D22 are the second shortest distances between the second outer coil 62 and the second inner coil 72.
  • the distances D11 and D12 between the first outer coil 61 and the first inner coil 71 and the distances D21 and D22 between the second outer coil 62 and the second inner coil 72 are equal to each other.
  • each distance D11, D12, D21, D22, D80, and D90 from the substrate 51 affects the dielectric strength voltage of the transformer 140.
  • the outer coil 60 (primary coil 16) is electrically connected to the first chip 31 including the primary circuit 13. .
  • Both the first chip 31 and the transformer 140 are mounted on the first die pad 21. Therefore, the common voltage of the substrate 51 of the transformer 140 and the primary circuit 13 of the first chip 31 is the same.
  • the outer coil 60 (first outer coil 61 and second outer coil 62) of the transformer 140 is connected to the first chip 31. Therefore, the common voltage of the outer coil 60 (the first outer coil 61 and the second outer coil 62) is the same as the common voltage of the primary circuit 13 of the first chip 31.
  • the dielectric strength of the transformer 140 is determined by the shortest distance between the outer coil 60 and the inner coil 70 (first shortest distance, second shortest distance) and the shortest thickness between the outer coil 60 and the substrate 51. It is determined.
  • the shortest distance can be adjusted by the shapes of the outer coil 60 and the inner coil 70, that is, the layout design of the transformer 140. That is, the dielectric strength of the transformer 140 can be adjusted by designing the layout of the transformer 140. Therefore, the dielectric strength of the transformer 140 can be easily changed.
  • a comparative example transformer 40X shown in FIG. 6 will be used as a comparative example for the transformer 140 of the second embodiment.
  • the transformer 40X of the comparative example is mounted on the first die pad 21 shown in FIG. 15.
  • the primary coil 16X is arranged closer to the substrate 51 than the secondary coil 17X.
  • a parasitic capacitor C1X is generated between the primary coil 16X and the substrate 51.
  • This parasitic capacitor C1X has a capacitance value that corresponds to the distance D1X between the substrate 51 and the primary coil 16X and the opposing area of the primary coil 16X.
  • a parasitic capacitor C2X is generated between the primary coil 16X and the secondary coil 17X.
  • This parasitic capacitor C2X has a capacitance value that corresponds to the distance D2X between the primary coil 16X and the secondary coil 17X and the opposing area of the primary coil 16X and the secondary coil 17X.
  • the wiring resistance value can be reduced by widening the wiring width of the primary coil 16X and the secondary coil 17X.
  • the wiring width is increased, the opposing area between the substrate 51 and the primary coil 16X increases, and the capacitance value of the parasitic capacitor C1X increases.
  • the opposing area between the primary coil 16X and the secondary coil 17X increases, and the capacitance value of the parasitic capacitor C2X increases.
  • Increasing the wiring thickness of the primary coil 16X and the secondary coil 17X affects the thickness of the first insulator 52 in which the primary coil 16X and the secondary coil 17X are embedded, that is, the manufacturing process. , the distance between the substrate 51 and the primary coil 16X, and the distance between the primary coil 16X and the secondary coil 17X, that is, the dielectric strength of the transformer 140.
  • the distance between the substrate 51 and the primary coil 16X, and the distance between the primary coil 16X and the secondary coil 17X that is, the dielectric strength of the transformer 140.
  • it is necessary to thicken the first insulator 52 that is, increase the number of insulating layers constituting the first insulator 52, which affects the manufacturing process of the transformer 140.
  • the transformer 140 of the second embodiment includes an outer coil 60, and the outer coil 60 includes both a first outer coil 61 and a second outer coil 62.
  • the first outer coil 61 and the second outer coil 62 have second ends 61B and 62B electrically connected to each other.
  • the first outer coil 61 and the second outer coil 62 generate magnetic fluxes in opposite directions when current flows from the first end 61A of the first outer coil 61 to the first end 62A of the second outer coil 62. It is rolled up like this. For example, as shown in FIG. 19, an upward magnetic flux is generated in the first outer coil 61, and a downward magnetic flux is generated in the second outer coil 62.
  • the magnetic flux M1 generated by the outer coil 60 becomes a smaller loop than that of the comparative example transformer 40X. Therefore, the magnetic flux crossing the inner coil 70 is larger than that of the comparative example transformer 40X. Therefore, the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70 can be improved. As a result, the transfer characteristics between the outer coil 60 and the inner coil 70 of the transformer 140 can be improved.
  • the magnetic flux M1 generated by the outer coil 60 forms a smaller loop than the transformer 40X of the comparative example.
  • the magnetic flux generated in this manner passes through the substrate 51 along the substrate upper surface 51S of the substrate 51. Therefore, compared to the transformer 40X of the comparative example, eddy currents are less likely to occur in the substrate 51. Therefore, in the transformer 140 of the second embodiment, loss with respect to the magnetic flux M1 can be reduced. In addition, the influence on the efficiency of magnetic coupling in the transformer 140 can be reduced. As a result, the transfer characteristics between the outer coil 60 and the inner coil 70 of the transformer 140 can be improved.
  • the wiring resistance values of the outer coil 60 and the inner coil 70 affect the amount of current flowing through the outer coil 60 and the inner coil 70, respectively, and the degree of magnetic coupling.
  • the wiring resistance value of the outer coil 60 is obtained by widening the wiring width of the outer coil 60 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the wiring resistance value of the inner coil 70 can be obtained by widening the wiring width of the inner coil 70 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the outer coil 60 and the inner coil 70 face each other in the x direction and the y direction. Therefore, even if the wiring width is increased, the facing area of the outer coil 60 and the inner coil 70 does not change. That is, the capacitance values of the parasitic capacitors C11, C12, C21, and C22 between the outer coil 60 and the inner coil 70 do not change. That is, compared to the transformer 40X of the comparative example, the wiring resistance value can be reduced without increasing the capacitance values of the parasitic capacitors C11, C12, C21, and C22 between the coils. As a result, current flows more easily in the outer coil 60 and inner coil 70 of the transformer 140, so that the amount of magnetic flux generated in the transformer 140 can be increased. In the transformer 140, it is possible to improve the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70, and thus to improve the transfer characteristics.
  • the capacitance value of the parasitic capacitor C60 between the substrate 51 and the outer coil 60 depends on the distance from the substrate 51 to the outer coil 60, assuming that the wiring width is constant. As the distance increases, the capacitance value decreases.
  • the first insulator 52 has the same thickness as the transformer 40X of the comparative example, in the transformer 140 of the second embodiment, the distances D61 and D62 from the substrate 51 to the outer coil 60, and the distance from the substrate 51 to the inner coil 70. D71 and D72 are larger than the transformer 40X of the comparative example. Therefore, the capacitance values of parasitic capacitors C60 and C70 can be reduced. If the capacitance values of the parasitic capacitors C60 and C70 are the same as that of the transformer 40X of the comparative example, the first insulator 52 can be made thinner, that is, the transformer 140 can be made thinner.
  • the transformer 140 of the second embodiment provides the following effects.
  • the transformer 140 of the second embodiment includes an outer coil 60, and the outer coil 60 includes both a first outer coil 61 and a second outer coil 62.
  • the first outer coil 61 and the second outer coil 62 have second ends 61B and 62B electrically connected to each other.
  • the first outer coil 61 and the second outer coil 62 generate magnetic fluxes in opposite directions when current flows from the first end 61A of the first outer coil 61 to the first end 62A of the second outer coil 62. It is rolled up like this.
  • the magnetic flux M1 generated by the outer coil 60 becomes a smaller loop than that of the comparative example transformer 40X. Therefore, the magnetic flux crossing the inner coil 70 is larger than that of the comparative example transformer 40X. Therefore, the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70 can be improved. As a result, the transfer characteristics between the outer coil 60 and the inner coil 70 of the transformer 140 can be improved.
  • the magnetic flux M1 generated by the outer coil 60 forms a smaller loop than the transformer 40X of the comparative example.
  • the magnetic flux generated in this manner passes through the substrate 51 along the substrate upper surface 51S of the substrate 51. Therefore, compared to the transformer 40X of the comparative example, eddy currents are less likely to occur in the substrate 51. Therefore, in the transformer 140 of the second embodiment, loss with respect to the magnetic flux M1 can be reduced. In addition, the influence on the efficiency of magnetic coupling in the transformer 140 can be reduced. As a result, the transfer characteristics between the outer coil 60 and the inner coil 70 of the transformer 140 can be improved.
  • the wiring resistance values of the outer coil 60 and the inner coil 70 affect the amount of current flowing through the outer coil 60 and the inner coil 70, respectively, and the degree of magnetic coupling.
  • the wiring resistance value of the outer coil 60 is obtained by widening the wiring width of the outer coil 60 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the wiring resistance value of the inner coil 70 can be obtained by widening the wiring width of the inner coil 70 and decreasing the aspect ratio of the wiring thickness to the wiring width.
  • the outer coil 60 and the inner coil 70 face each other in the x direction and the y direction. Therefore, even if the wiring width is increased, the facing area of the outer coil 60 and the inner coil 70 does not change. That is, the capacitance values of the parasitic capacitors C11, C12, C21, and C22 between the outer coil 60 and the inner coil 70 do not change. That is, compared to the transformer 40X of the comparative example, the wiring resistance value can be reduced without increasing the capacitance values of the parasitic capacitors C11, C12, C21, and C22 between the coils. As a result, current flows more easily in the outer coil 60 and inner coil 70 of the transformer 140, so that the amount of magnetic flux generated in the transformer 140 can be increased. In the transformer 140, it is possible to improve the efficiency of magnetic coupling between the outer coil 60 and the inner coil 70, and thus to improve the transfer characteristics.
  • the capacitance value of the parasitic capacitor C60 between the substrate 51 and the outer coil 60 depends on the distance from the substrate 51 to the outer coil 60, assuming that the wiring width is constant. As the distance increases, the capacitance value decreases.
  • the first insulator 52 has the same thickness as the transformer 40X of the comparative example, in the transformer 140 of the second embodiment, the distances D61 and D62 from the substrate 51 to the outer coil 60, and the distance from the substrate 51 to the inner coil 70. D71 and D72 are larger than the transformer 40X of the comparative example. Therefore, the capacitance values of parasitic capacitors C60 and C70 can be reduced. If the capacitance values of the parasitic capacitors C60 and C70 are the same as that of the transformer 40X of the comparative example, the first insulator 52 can be made thinner, that is, the transformer 140 can be made thinner.
  • each distance D11, D12, D21, D22, D80, and D90 from the substrate 51 affects the dielectric strength voltage of the transformer 140.
  • the outer coil 60 (primary coil 16) is electrically connected to the first chip 31 including the primary circuit 13. .
  • Both the first chip 31 and the transformer 140 are mounted on the first die pad 21. Therefore, the common voltage of the substrate 51 of the transformer 140 and the primary circuit 13 of the first chip 31 is the same.
  • the outer coil 60 (first outer coil 61 and second outer coil 62) of the transformer 140 is connected to the first chip 31. Therefore, the common voltage of the outer coil 60 (the first outer coil 61 and the second outer coil 62) is the same as the common voltage of the primary circuit 13 of the first chip 31.
  • the dielectric strength of the transformer 140 is determined by the shortest distance between the outer coil 60 and the inner coil 70 (first shortest distance, second shortest distance) and the shortest thickness between the outer coil 60 and the substrate 51. It is determined.
  • the shortest distance can be adjusted by the shapes of the outer coil 60 and the inner coil 70, that is, the layout design of the transformer 140. That is, the dielectric strength of the transformer 140 can be adjusted by designing the layout of the transformer 140. Therefore, the dielectric strength of the transformer 140 can be easily changed.
  • the signal transmission device 110 including the transformer 140 of the second embodiment the signal of the primary side circuit 13 (transmission circuit 13T) is efficiently transmitted to the secondary side circuit 14 (reception circuit 14R). be able to.
  • the outer coil 60 includes a first outer coil 61 and a second outer coil 62 formed on two first insulating layers 527 and 529.
  • the first outer coils 61 of the first insulating layers 527 and 529 are connected in parallel by vias 65 .
  • the second outer coils 62 of the first insulating layers 527 and 529 are connected in parallel by vias 66 .
  • the number of first insulating layers forming the first outer coil 61 and the second outer coil 62 can be three or more.
  • the inner coil 70 includes a first inner coil 71 and a second inner coil 72 formed on two first insulating layers 527 and 529.
  • the first inner coil 71 and the second inner coil 72 of the first insulating layers 527 and 529 are connected in parallel by a via 75.
  • the number of first insulating layers forming the first inner coil 71 and the second inner coil 72 can be three or more.
  • the outer coil 60 includes a first outer coil 61, a second outer coil 62, a third outer coil 63 connected to the first outer coil 61, and a fourth outer coil 64 connected to the second outer coil 62.
  • the third outer coil 63 is arranged so as to overlap the first outer coil 61 when viewed from the z direction.
  • the third outer coil 63 includes coil portions 631 and 632 formed in the two first insulating layers 527 and 529, respectively.
  • the coil portions 631 and 632 are connected in series between the first end 61A of the first outer coil 61 and the first wiring portion 80.
  • the fourth outer coil 64 is arranged so as to overlap the second outer coil 62 when viewed from the z direction.
  • the fourth outer coil 64 includes coil portions 641 and 642 formed in the two first insulating layers 527 and 529, respectively.
  • the coil portions 641 and 642 are connected in series between the first end 62A of the second outer coil 62 and the second wiring portion 90.
  • the third outer coil 63 and the first outer coil 61 are connected in series between the first wiring section 80 and the second outer coil 62. Further, a second outer coil 62 and a fourth outer coil 64 are connected in series between the first outer coil 61 and the second wiring section 90. Therefore, the number of turns of the outer coil 60 disposed outside each of the first inner coil 71 and the second inner coil 72 can be increased. Thereby, the amount of magnetic flux generated by the outer coil 60 can be increased.
  • the third outer coils 63 (631, 632) formed on the two first insulating layers 527, 529 may be connected in parallel.
  • the fourth outer coils 64 (641, 642) formed on the two first insulating layers 527, 529 may be connected in parallel.
  • the first outer coil 61 and the second outer coil 62 may be formed in a plurality of first insulating layers and connected in parallel, as shown in FIG. 20.
  • the inner coil 70 (first inner coil 71 and second inner coil 72) is arranged in the first insulating layer 529.
  • the first insulating layer on which the inner coil 70 is placed can be arbitrarily changed.
  • the modified transformer 140C shown in FIG. 23 is different from the transformer 140B shown in FIG. It is arranged so as not to overlap with the coil portion 631 arranged on the first insulating layer 527 when viewed from the z direction.
  • the first outer coil 61 and the third outer coil 63 in this manner, the opposing area in the z direction is reduced, and the capacitance of the parasitic capacitor can be reduced.
  • the fourth outer coil 64 by arranging the coil portion 642 so as not to overlap the second outer coil 62 and the coil portion 641 in plan view, the opposing area in the z direction is reduced, and the parasitic capacitor is reduced. Capacity can be reduced.
  • the first insulating layer 526 is different from the first insulating layer 528 .
  • the inner coil 70 By arranging the inner coil 70 in this manner, the opposing area between the outer coil 60 and the inner coil 70 is reduced, and the capacitance of the parasitic capacitor can be reduced.
  • the first inner coil 71 and the second inner coil 72 of the inner coil 70 may be disposed in a first insulating layer different from the first insulating layer 528 in which the outer coil 60 is disposed, for example, in the first insulating layer 528. 527.
  • FIG. 25 is a circuit diagram schematically showing the configuration of the signal transmission device 110A as a modified example.
  • FIG. 26 is a schematic plan view of the signal transmission device 110A of FIG. 25.
  • the signal transmission device 110A of this modification differs from the signal transmission device 110 of the second embodiment in the configuration of the receiving circuit 14RA of the secondary circuit 14A.
  • the connection between the transformer 140 and the second chip 32A is different.
  • a wire W18A is connected to the first end 71A (see FIG. 16) of the first inner coil 71 exposed through the opening 52U3.
  • a wire W18B is connected to the first end 72A (see FIG. 16) of the second inner coil 72 exposed through the opening 52U5.
  • These wires W18A and W18B are connected to the second chip 32A. Therefore, the first ends 71A and 72A exposed through the openings 52U3 and 52U5 can also be called connection pads that connect the transformer 140 to the second chip 32A.
  • the transformer 140 includes second chips 32 having different configurations, such as the second chip 32 including the receiving circuit 14R shown in FIG. 14 and the second chip 32A including the receiving circuit 14RA shown in FIG.
  • the signal of the first chip 31 can be transmitted to 32A.
  • one type of transformer 140 can be used for two types of signal transmission devices 110 and 110A with different configurations.
  • outer coil 60 and the inner coil 70 in plan view can be arbitrarily changed.
  • the outer coil 60 and the inner coil 70 may be formed in a rectangular shape.
  • the outer coil 60 and the inner coil 70 may be formed into a rectangular shape with rounded corners. Further, the outer coil 60 and the inner coil 70 may be formed in an elliptical shape, as in a transformer 140G shown in FIG. 29.
  • the first outer coil 61 and the second outer coil 62 of the outer coil 60 may be provided on different insulating layers.
  • second outer coil 62 may be disposed on first insulating layer 526.
  • the second end 61B of the first outer coil 61 and the second end 62B of the second outer coil 62 are formed to overlap each other in plan view.
  • the second end 61B of the first outer coil 61 and the second end 62B of the second outer coil 62 are directly electrically connected.
  • the first inner coil 71 and the second inner coil 72 may be provided in different insulating layers.
  • the wires W13A and W13B may be configured to be directly connected to the outer coil 60 (first outer coil 61 and second outer coil 62).
  • the distance between the first end 61A of the first outer coil 61 of the outer coil 60 and the inner coil 70 (first inner coil 71) is greater than or equal to the distance required for the withstand voltage of the transformer 140.
  • the wire W13A can be connected to the first end 61A of the first outer coil 61.
  • the second outer coil 62 and the wire W13B are the wire W13B.
  • the term “on” includes both “on” and “above” unless the context clearly indicates otherwise.
  • the phrase “the first layer is formed on the second layer” refers to the fact that in some embodiments the first layer may be directly disposed on the second layer in contact with the second layer, but in other embodiments. It is contemplated that the first layer may be placed above the second layer without contacting the second layer. That is, the term “on” does not exclude structures in which other layers are formed between the first layer and the second layer.
  • the z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it need to completely coincide with the vertical direction. Accordingly, various structures according to the present disclosure (e.g., the structure shown in FIG. 4) are different from each other in that "upper” and “lower” in the Z-axis direction described herein are “upper” and “lower” in the vertical direction. Not limited to one thing.
  • the x direction may be a vertical direction, or the y direction may be a vertical direction.
  • a substrate (51) having a substrate top surface (51S) and a substrate bottom surface (51R); a first insulator (52) in contact with the upper surface of the substrate (51S); a second insulator (53) in contact with the lower surface of the substrate (51R); an outer coil (60) and an inner coil (70) disposed within the first insulator (52); including;
  • the inner coil (70) is arranged inside the outer coil (60) when viewed from a direction perpendicular to the upper surface of the substrate (51S) so as not to overlap with the outer coil (60). Trance.
  • the first insulator (52) includes a lower surface (52R) in contact with the upper surface of the substrate (51S), and an upper surface (52S) opposite to the lower surface (52R), At least one of the outer coil (60) and the inner coil (70) is arranged closer to the upper surface (52S) of the first insulator (52) in the thickness direction of the first insulator (52). ing, The transformer described in Appendix 1.
  • the outer coil (60) and the inner coil (70) are located at the same position in the thickness direction of the first insulator (52) and are arranged on the same plane orthogonal to the thickness direction.
  • Appendix 12 The transformer according to any one of appendices 1 to 11, wherein the substrate (51) is electrically floating.
  • a plurality of the outer coils (60) are provided in the thickness direction of the first insulator (52), and the plurality of outer coils (60) are connected in parallel.
  • a plurality of the outer coils (60) are provided in the thickness direction of the first insulator (52), and the plurality of outer coils (60) are connected in series.
  • a plurality of the inner coils (70) are provided in the thickness direction of the first insulator (52), and the plurality of inner coils (70) are connected in parallel.
  • a plurality of the inner coils (70) are provided in the thickness direction of the first insulator (52), and the plurality of inner coils (70) are connected in series.
  • the outer coil (60) includes a first outer coil (61) and a second outer coil (62) each having a first end and a second end
  • the inner coil (70) includes a first inner coil (71) and a second inner coil (72) each having a first end and a second end
  • the first outer coil (61) and the second outer coil (62) are formed in a spiral shape when viewed from the thickness direction of the first insulator (52),
  • the first inner coil (71) is arranged inside the first outer coil (61) so as not to overlap with the first outer coil (61)
  • the second inner coil (72) is arranged inside the first outer coil (61) so as not to overlap with the first outer coil (61).
  • arranged inside the second outer coil (62) so as not to overlap with the second outer coil (62);
  • the transformer according to any one of Supplementary notes 1 to 12.
  • a second end of the first outer coil (61) and a second end of the second outer coil (62) are connected to each other, and the first outer coil (61) and the second outer coil (62) are connected to each other.
  • the directions are opposite to each other. It is wound so that a magnetic flux of The transformer described in Appendix 17.
  • the outer coil (60) includes a third outer coil (63) connected to a first end of the first outer coil (61) and a third outer coil (63) connected to a first end of the second outer coil (62). 4 outer coil (64).
  • the third outer coil (63) is arranged so as to overlap the first outer coil (61) when viewed from the thickness direction of the first insulator (52),
  • the fourth outer coil (64) is arranged to overlap the second outer coil (62) when viewed from the thickness direction of the first insulator (52).
  • a plurality of the third outer coils (63) and the fourth outer coils (64) are each provided in the thickness direction of the first insulator (52), and the plurality of third outer coils (63) are connected to each other.
  • the inner coil (70) includes a third inner coil connected to the second end of the first inner coil (71) and a fourth inner coil connected to the second end of the second inner coil (72).
  • the transformer according to any one of Supplementary Notes 17 to 21, comprising:
  • the third inner coil is arranged to overlap the first inner coil (71) when viewed from the thickness direction of the first insulator (52),
  • the fourth inner coil is arranged to overlap the second inner coil (72) when viewed from the thickness direction of the first insulator (52).
  • a plurality of the third inner coils and a plurality of the fourth inner coils are respectively provided in the thickness direction of the first insulator (52), the plurality of third inner coils are connected to each other, and the plurality of the fourth inner coils are connected to each other. are connected to each other, the transformer according to attachment 22 or attachment 23.
  • the transformer (40, 140) is a substrate (51) having a substrate top surface (51S) and a substrate bottom surface (51R); a first insulator (52) in contact with the upper surface of the substrate (51S); a second insulator (53) in contact with the lower surface of the substrate (51R); an outer coil (60) and an inner coil (70) disposed within the first insulator (52); including;
  • the inner coil (70) is a substrate (51) having a substrate top surface (51S) and a substrate bottom surface (51R); a first insulator (52) in contact with the upper surface of the substrate (51S); a second insulator (53) in contact with the lower surface of the substrate (51R); an outer coil (60) and an inner coil (70) disposed within the first insulator (52); including;
  • the inner coil (70) is

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Publication number Priority date Publication date Assignee Title
CN119833289A (zh) * 2025-01-14 2025-04-15 电子科技大学 一种新型片上隔离变压器

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JP2011159953A (ja) * 2010-01-05 2011-08-18 Fujitsu Ltd 電子回路及び電子機器
US20130278372A1 (en) * 2012-04-20 2013-10-24 Infineon Technologies Austria Ag Semiconductor Component with Coreless Transformer
JP2014022484A (ja) * 2012-07-17 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> ソレノイドインダクタ
WO2014097425A1 (ja) * 2012-12-19 2014-06-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2014522561A (ja) * 2012-05-29 2014-09-04 富士電機株式会社 アイソレータおよびアイソレータの製造方法
US20200402698A1 (en) * 2019-06-24 2020-12-24 Nxp B.V. High Current Integrated Circuit-Based Transformer
JP2020205342A (ja) * 2019-06-17 2020-12-24 ローム株式会社 チップ部品

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159953A (ja) * 2010-01-05 2011-08-18 Fujitsu Ltd 電子回路及び電子機器
US20130278372A1 (en) * 2012-04-20 2013-10-24 Infineon Technologies Austria Ag Semiconductor Component with Coreless Transformer
JP2014522561A (ja) * 2012-05-29 2014-09-04 富士電機株式会社 アイソレータおよびアイソレータの製造方法
JP2014022484A (ja) * 2012-07-17 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> ソレノイドインダクタ
WO2014097425A1 (ja) * 2012-12-19 2014-06-26 ルネサスエレクトロニクス株式会社 半導体装置
JP2020205342A (ja) * 2019-06-17 2020-12-24 ローム株式会社 チップ部品
US20200402698A1 (en) * 2019-06-24 2020-12-24 Nxp B.V. High Current Integrated Circuit-Based Transformer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119833289A (zh) * 2025-01-14 2025-04-15 电子科技大学 一种新型片上隔离变压器

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