WO2024038535A1 - Unité d'éclairage, dispositif d'exposition et procédé d'exposition - Google Patents

Unité d'éclairage, dispositif d'exposition et procédé d'exposition Download PDF

Info

Publication number
WO2024038535A1
WO2024038535A1 PCT/JP2022/031205 JP2022031205W WO2024038535A1 WO 2024038535 A1 WO2024038535 A1 WO 2024038535A1 JP 2022031205 W JP2022031205 W JP 2022031205W WO 2024038535 A1 WO2024038535 A1 WO 2024038535A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
optical system
light emitting
light source
lighting unit
Prior art date
Application number
PCT/JP2022/031205
Other languages
English (en)
Japanese (ja)
Inventor
岩永正也
川戸聡
大川智之
中臣聡
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to PCT/JP2022/031205 priority Critical patent/WO2024038535A1/fr
Publication of WO2024038535A1 publication Critical patent/WO2024038535A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • It relates to a lighting unit, an exposure device, and an exposure method.
  • liquid crystal display panels have been widely used as display elements for personal computers, televisions, etc.
  • a liquid crystal display panel is manufactured by forming a circuit pattern of thin film transistors on a plate (glass substrate) using a photolithography method.
  • an exposure device is used that projects and exposes an original pattern formed on a mask onto a photoresist layer on a plate via a projection optical system (for example, Patent Document 1). .
  • the lighting unit includes a first light source array in which a plurality of first light source elements each having a first light emitting section that emits light having a first wavelength characteristic is arranged, and the first light source a first enlarging optical system that forms an enlarged image of the first light emitting portion of each of the elements; a first optical system into which light from the first enlarging optical system is incident; and the first wavelength characteristic.
  • a second light source array in which a plurality of second light source elements having second light emitting parts that emit light having different second wavelength characteristics are arranged, and an enlarged image of the second light emitting part of each of the second light source elements; a second magnifying optical system forming a second magnifying optical system; a second optical system into which light from the second magnifying optical system enters; a synthesizing optical element that synthesizes light, and the synthesizing optical element is at or near the back focal position of the first optical system, and is at the back focal position of the second optical system. or located at a certain position nearby.
  • an exposure apparatus includes the illumination unit described above and a projection optical system that projects a pattern image of a mask illuminated by the illumination unit onto a photosensitive substrate.
  • an exposure method is an exposure method using the above-mentioned exposure apparatus, comprising: illuminating the mask using the illumination unit; and illuminating the mask using the projection optical system. projecting a pattern image onto the photosensitive substrate.
  • configurations of the embodiments described below may be modified as appropriate, and at least a portion thereof may be replaced with other components.
  • the configuration elements whose arrangement is not particularly limited are not limited to the arrangement disclosed in the embodiments, but can be arranged at a position where the function can be achieved.
  • FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus according to the first embodiment.
  • FIG. 2 is a schematic diagram showing the configuration of the lighting unit according to the first embodiment.
  • FIG. 3(A) is a plan view schematically showing the configurations of the first and second light source arrays
  • FIG. 3(B) is a diagram schematically showing the internal configurations of the first and second light source units. It is.
  • FIG. 4 is a graph showing an example of the relationship between the angle of incidence on the dichroic mirror and the illuminance.
  • FIG. 5 is a graph showing an example of the light distribution characteristics of the light emitting part of the LED chip.
  • FIGS. 6A and 6B are diagrams illustrating an enlarged image formed on a predetermined surface in the second embodiment.
  • FIG. 7(A) and FIG. 7(B) are diagrams showing simulation results.
  • FIG. 1 is a diagram schematically showing the configuration of an exposure apparatus 10 according to the first embodiment.
  • the exposure apparatus 10 drives the mask MSK and the glass substrate (hereinafter referred to as "substrate") P in the same direction and at the same speed with respect to the projection optical system PL, thereby transferring the pattern formed on the mask MSK onto the substrate P.
  • This is a scanning stepper (scanner) that transfers images onto the image.
  • the substrate P is a rectangular glass substrate used, for example, in a liquid crystal display device (flat panel display), and has at least one side length or diagonal length of 500 mm or more.
  • the direction in which the mask MSK and substrate P are driven during scanning exposure is the X-axis direction
  • the direction in the horizontal plane perpendicular to this is the Y-axis direction, which is orthogonal to the X-axis and the Y-axis.
  • the direction of rotation is defined as the Z-axis direction
  • the directions of rotation (tilt) around the X-axis, Y-axis, and Z-axis are defined as ⁇ x, ⁇ y, and ⁇ z directions, respectively.
  • the exposure apparatus 10 includes an illumination system IOP, a mask stage MST that holds a mask MSK, a projection optical system PL, a body 70 that supports these, a substrate stage PST that holds a substrate P, a control system for these, and the like.
  • the control system centrally controls each component of the exposure apparatus 10.
  • the body 70 includes a base (vibration isolator) 71, columns 72A, 72B, an optical surface plate 73, a support 74, and a slide guide 75.
  • the base (vibration isolation table) 71 is placed on the floor F, isolates vibrations from the floor F, and supports the columns 72A, 72B, etc.
  • Columns 72A and 72B each have a frame shape, and column 72A is arranged inside column 72B.
  • the optical surface plate 73 has a flat plate shape and is fixed to the ceiling of the column 72A.
  • the support body 74 is supported on the ceiling of the column 72B via a slide guide 75.
  • Slide guide 75 includes an air ball lifter and a positioning mechanism, and positions support body 74 (that is, mask stage MST, which will be described later) at an appropriate position in the X-axis direction with respect to optical surface plate 73.
  • the illumination system IOP is arranged above the body 70.
  • the illumination system IOP irradiates the mask MSK with illumination light IL.
  • the detailed configuration of the illumination system IOP will be described later.
  • Mask stage MST is supported by support body 74.
  • a mask MSK having a pattern surface (lower surface in FIG. 1) on which a circuit pattern is formed is fixed to the mask stage MST by, for example, vacuum suction (or electrostatic suction).
  • Mask stage MST is driven with a predetermined stroke in the scanning direction (X-axis direction) by a drive system including, for example, a linear motor, and is also slightly driven in the non-scanning direction (Y-axis direction and ⁇ z direction).
  • Positional information (including rotational information in the ⁇ z direction) of mask stage MST in the XY plane is measured by an interferometer system.
  • the interferometer system irradiates a length measurement beam onto a movable mirror (or mirror-finished reflective surface (not shown)) provided at the end of mask stage MST, and receives reflected light from the movable mirror. Measure the position of mask stage MST.
  • the measurement results are supplied to a control device (not shown), and the control device drives mask stage MST via a drive system according to the measurement results of the interferometer system.
  • Projection optical system PL is supported by optical surface plate 73 below mask stage MST (-Z side).
  • the projection optical system PL is configured similarly to the projection optical system disclosed in, for example, U.S. Pat. 7), and forms a rectangular image field whose longitudinal direction is the Y-axis direction.
  • four projection optical units 100 are arranged at predetermined intervals in the Y-axis direction, and the remaining three projection optical units 100 are spaced apart from the four projection optical units 100 on the +X side and at predetermined intervals in the Y-axis direction. It is located in As each of the plurality of projection optical units 100, for example, one that forms an erect normal image with a double-sided telecentric, equal-magnification system is used.
  • the plurality of projection areas of the projection optical units 100 arranged in a staggered manner are collectively referred to as an exposure area.
  • the illumination light IL When the illumination region on the mask MSK is illuminated by the illumination light IL from the illumination system IOP, the illumination light IL that has passed through the mask MSK illuminates the circuit pattern of the mask MSK in the illumination region through the projection optical system PL.
  • a projected image (partially erected image) is formed in an irradiation area (exposure area (conjugate to the illumination area)) on the substrate P arranged on the image plane side of the projection optical system PL.
  • a resist sensitizer
  • the mask stage MST and substrate stage PST are driven synchronously, that is, the mask MSK is driven in the scanning direction (X-axis direction) with respect to the illumination area (illumination light IL), and the substrate P is moved into the exposure area (illumination light IL). By driving in the same scanning direction, the substrate P is exposed and the pattern of the mask MSK is transferred onto the substrate P.
  • the substrate stage PST is arranged on a base (vibration isolation table) 71 below (-Z side) the projection optical system PL.
  • a substrate P is held on substrate stage PST via a substrate holder (not shown).
  • Position information in the XY plane of substrate stage PST (including rotation information (yawing amount (rotation amount ⁇ z in the ⁇ z direction), pitching amount (rotation amount ⁇ x in the ⁇ x direction), rolling amount (rotation amount ⁇ y in the ⁇ y direction)) is measured by an interferometer system.
  • the interferometer system irradiates a length measurement beam from an optical surface plate 73 onto a movable mirror (or a mirror-finished reflective surface (not shown)) provided at the end of the substrate stage PST, and collects the reflected light from the movable mirror. By receiving light, the position of substrate stage PST is measured.
  • the measurement results are supplied to a control device (not shown), and the control device drives substrate stage PST according to the measurement results of the interferometer system.
  • the exposure apparatus 10 performs alignment measurement (eg, EGA, etc.) prior to exposure, and uses the results to expose the substrate P according to the following procedure.
  • mask stage MST and substrate stage PST are synchronously driven in the X-axis direction.
  • the control device moves (steps) substrate stage PST to a position corresponding to the second shot area.
  • scanning exposure is performed for the second shot area.
  • the control device transfers the pattern of the mask MSK to all shot areas on the substrate P by repeating stepping between shot areas of the substrate P and scanning exposure for the shot areas.
  • the illumination system IOP includes a plurality of illumination units 90 corresponding to each of the plurality of projection optical units 100 included in the projection optical system PL.
  • FIG. 2 is a diagram schematically showing the configuration of the lighting unit 90.
  • the illumination unit 90 includes a first light source unit OPU1, a second light source unit OPU2, and an illumination optical system 80.
  • the first light source unit OPU1 includes a first light source array 20A and a first enlarging optical system 30A
  • the second light source unit OPU2 includes a second light source array 20B and a second enlarging optical system 30B. , is provided.
  • FIG. 3(A) is a plan view schematically showing the configurations of the first light source array 20A and the second light source array 20B.
  • the first light source array 20A includes, for example, a plurality (5 ⁇ 5 in FIG. 3A) of LED (Light Emitting Diode) chips 23A arranged on a substrate 21A. The number of LED chips 23A may be changed as necessary.
  • Each of the plurality of LED chips 23A has a light emitting section 231A, and the peak wavelength of light emitted from the light emitting section 231A is within the range of 380 to 390 nm. That is, the light emitting section 231A is an ultraviolet LED (UV LED).
  • UV LED ultraviolet LED
  • the peak wavelength of the light emitted from the light emitting section 231A is 385 nm.
  • the light emitting surface of the light emitting section 231A is square, and the length of one side thereof is a1.
  • the LED chips 23A are arranged at a pitch P1.
  • the pitch P1 is the distance between the centers of adjacent LED chips 23A.
  • the second light source array 20B includes, for example, a plurality of (5 ⁇ 5 in FIG. 3A) LED chips 23B arranged on a substrate 21B.
  • the number of LED chips 23B may be changed as necessary.
  • Each of the plurality of LED chips 23B has a light emitting section 231B, and the peak wavelength of light emitted from the light emitting section 231B is within the range of 360 to 370 nm. That is, the light emitting section 231B is a UV LED. More preferably, the peak wavelength of the light emitted from the light emitting section 231B is 365 nm.
  • the light emitting surface of the light emitting section 231B is square, and the length of one side thereof is a2.
  • the LED chips 23B are arranged at a pitch P2.
  • the arrangement pitch P1 of the LED chips 23A and the arrangement pitch P2 of the LED chips 23B may be the same or different. Further, the length a1 of one side of the light emitting surface of the light emitting section 231A and the length a2 of one side of the light emitting surface of the light emitting section 231B may be the same or different. Note that the LED chips 23A and 23B may be arranged, for example, on a heat sink instead of on the substrate.
  • FIG. 3(B) is a diagram schematically showing the internal configurations of the first light source unit OPU1 and the second light source unit OPU2. Note that since the internal configurations of the first light source unit OPU1 and the second light source unit OPU2 are the same, the configuration of the first light source unit OPU1 will be described here as a representative.
  • the two directions in which the LED chips 23A are arranged are referred to as the X1 direction and the Y1 direction.
  • the X1 direction and the Y1 direction are orthogonal.
  • the direction perpendicular to the X1 direction and the Y1 direction is defined as the Z1 direction.
  • the Z1 direction is approximately parallel to the optical axis OA of light emitted by the light emitting section 231A.
  • FIG. 3(B) for clarity of the drawing, only four LED chips 23A lined up in a row along the Y1 direction are shown.
  • the first enlarging optical system 30A is an enlarging optical system for forming an enlarged image of the light emitting portion 231A of each LED chip 23A on a predetermined plane PP.
  • the first enlarging optical system 30A includes a plurality of lens sections 31A arranged to correspond to the arrangement of the LED chips 23A.
  • Each of the lens sections 31A is a double-sided telecentric optical system that enlarges and projects the light emitting section 231A at a magnification M1.
  • each lens section 31A includes four plano-convex lenses, but is not limited to this; each lens section 31A may include, for example, two biconvex lenses, It may also include three biconvex lenses. Further, each lens portion 31A may include, for example, a plano-convex lens and a biconvex lens.
  • the enlarged images of the plurality of light emitting sections 231A (231B) substantially touch each other on the predetermined plane PP.
  • the illumination optical system 80 includes a first condensing optical system (first optical system) 81A including a first dichroic mirror DM1, and a second condensing optical system 81B (second optical system). , a second dichroic mirror DM2, an imaging optical system 83, a fly-eye lens FEL, an aperture stop 85, and a condenser optical system 84.
  • the first condensing optical system 81A forms a pupil of an enlarged image of the light emitting section 231A formed by the first enlarging optical system 30A. That is, the rear focal position of the first condensing optical system 81A is the position of the pupil.
  • the first condensing optical system 81A includes a first dichroic mirror DM1 in the middle of the optical path, and reflects at least a portion of the light having a peak wavelength of 385 nm. As a result, the light beam enters the second dichroic mirror DM2.
  • the first condensing optical system 81A may be configured without the first dichroic mirror DM1, and in that case, the arrangement of the first light source unit OPU1 and each lens of the first condensing optical system 81A may be changed. The arrangement may be appropriately adjusted so that the light beam is incident on the second dichroic mirror DM2. Further, the first condensing optical system 81A may be composed of one lens, or may be composed of a lens group including a plurality of lenses.
  • the second condensing optical system 81B forms a pupil of an enlarged image of the light emitting section 231B formed by the second enlarging optical system 30B. That is, the rear focal position of the second condensing optical system 81B is the position of the pupil.
  • the second condensing optical system 81B may be composed of one lens, or may be composed of a lens group including a plurality of lenses.
  • the second dichroic mirror DM2 transmits at least part of the light with a peak wavelength of 385 nm and reflects at least part of the light with a peak wavelength of 365 nm. Thereby, a composite image is formed in which the pupil image formed by the first condensing optical system 81A and the pupil image formed by the second condensing optical system 81B are superimposed.
  • the second dichroic mirror DM2 superimposes and synthesizes the pupil image formed by the first condensing optical system 81A and the pupil image formed by the second condensing optical system 81B. form an image. That is, the second dichroic mirror DM2 is arranged at a position that is the rear focal position of the first condensing optical system 81A and the rear focal position of the second condensing optical system 81B. Thereby, the second dichroic mirror DM2 is illuminated by Koehler illumination with the light emitted from the first light source unit OPU1 and the light emitted from the second light source unit OPU2.
  • the second dichroic mirror DM2 does not necessarily have to be arranged at the rear focal position of the first condensing optical system 81A, but is the rear focal position of the second condensing optical system 81B. , may be arranged so as to be located near the respective rear focal positions.
  • the term “nearby” means within ⁇ 100 mm from the rear focal position along the optical axis, preferably within ⁇ 50 mm, and more preferably ⁇ 20 mm. Note that the signs here are positive for the direction in which the light from the light source travels along the optical axis, and negative for the opposite direction.
  • FIG. 4 is a graph showing an example of the relationship between the angle of incidence on the dichroic mirror and the illuminance.
  • the horizontal axis represents the angle of incidence on the dichroic mirror
  • the vertical axis represents the illuminance of reflected light.
  • the illuminance on the vertical axis is defined as 1, which is the illuminance of reflected light when the light is incident on the dichroic mirror at the designed incident angle ⁇ .
  • the incident angle of the light beam to the dichroic mirror is about the designed incident angle ⁇ ⁇ 8°. This results in a change in illuminance of 3% or more.
  • the angle of incidence of the light beam on the dichroic mirror is within the range of the designed incidence angle ⁇ 4°, and the change in illuminance can be kept to 1% or less.
  • the difference between the illuminance of the light incident on the second dichroic mirror DM2 and the illuminance of the light reflected on the second dichroic mirror DM2 is reduced. Therefore, it is possible to realize illumination light IL having high brightness and less uneven illuminance.
  • the incident angle ⁇ of the light from the second condensing optical system 81B to the second dichroic mirror DM2 is set to 35°.
  • the incident angle ⁇ of 35° means that the incident angle ⁇ is within the range of 35° ⁇ 5°.
  • the incident angle ⁇ is preferably 25° or more and less than 45°, more preferably 25° or more and 42° or less, and even more preferably 35° ⁇ 5°.
  • the second dichroic mirror DM2 can reflect with high efficiency the light beam of the pupil image formed by the second condensing optical system 81B.
  • the illumination unit 90 includes a detector DT10 for monitoring light with a peak wavelength of 385 nm, a detector DT20 for monitoring light with a peak wavelength of 365 nm, and a detector DT20 for monitoring light with a peak wavelength of 385 nm and a peak wavelength of 365 nm.
  • a detector DT30 is provided for monitoring the light.
  • the detector DT10 detects the illuminance of the light with a peak wavelength of 385 nm reflected by the first dichroic mirror DM1.
  • the detector DT20 detects the illuminance of the light having a peak wavelength of 365 nm reflected by the second dichroic mirror DM2.
  • the detector DT30 detects the illuminance of the 385 nm light unintentionally reflected by the second dichroic mirror DM2 and the illuminance of the 365 nm light unintentionally transmitted by the second dichroic mirror DM2.
  • the detection results of the detectors DT10 to DT30 are output to a control device (not shown), and the control device outputs the LED chips 23A of the first light source unit OPU1 and the second light source unit OPU2, respectively, based on the detection results of the detectors DT10 to DT30. and controls the value of the current supplied to 23B.
  • the imaging optical system 83 is a double-sided telecentric optical system that projects the composite image synthesized by the second dichroic mirror DM2 at the same magnification onto the incident end of the fly's eye lens FEL. Note that the imaging optical system 83 may reduce and project the composite image synthesized by the second dichroic mirror DM2 onto the incident end of the fly's eye lens FEL.
  • the fly's eye lens FEL is constructed by densely arranging a large number of lens elements each having, for example, positive refractive power, vertically and horizontally so that their optical axes are parallel to the reference optical axis AX.
  • Each lens element constituting the fly's eye lens FEL has a rectangular cross section similar to the shape of the illumination field to be formed on the mask MSK (and thus the shape of the exposure area to be formed on the substrate P).
  • the light beam incident on the fly's eye lens FEL is wavefront-divided by a large number of lens elements, and one light source image is formed at or near the rear focal plane (output surface) of each lens element. That is, a substantial surface light source, ie, a secondary light source, consisting of a large number of light source images is formed at or near the rear focal plane (output surface) of the fly's eye lens FEL.
  • a light beam from a secondary light source formed at or near the rear focal plane (output plane) of the fly-eye lens FEL enters an aperture stop 85 arranged near the rear focal plane (output plane).
  • the rear focal plane (output surface) of the fly's eye lens FEL is optically conjugate with the first light source array 20A and the second light source array 20B.
  • the aperture stop 85 is arranged at a position that is optically approximately conjugate with the entrance pupil plane of the projection optical unit 100, and has a variable aperture for defining the range that contributes to the illumination of the secondary light source.
  • the aperture stop 85 changes the aperture diameter of the variable aperture to determine the ⁇ value (the aperture of the secondary light source image on the pupil plane relative to the aperture diameter of the pupil plane of the projection optical unit 100) that determines the illumination condition. ratio) to the desired value.
  • the light from the secondary light source passes through the aperture diaphragm 85 and, after being condensed by the condenser optical system 84, illuminates the mask MSK in which a predetermined pattern is formed in a superimposed manner.
  • the lighting unit 90 includes a first light source array 20A in which a plurality of LED chips 23A are arranged, each having a light emitting section 231A that emits light with a peak wavelength of 385 nm, and a first light source array 20A in which a plurality of LED chips 23A are arranged.
  • 23A a first enlarging optical system 30A that forms an enlarged image of each light emitting unit 231A; a first condensing optical system 81A that forms a pupil of an enlarged image formed by the first enlarging optical system 30A; Equipped with.
  • the illumination unit 90 forms an enlarged image of a second light source array 20B in which a plurality of LED chips 23B having a light emitting part 231B that emits light with a peak wavelength of 365 nm is arranged, and the light emitting part 231B of each of the LED chips 23B. It includes a second enlarging optical system 30B and a second condensing optical system 81B that forms a pupil of an enlarged image formed by the second enlarging optical system 30B.
  • the illumination unit 90 has a second condensing optical system 81A that superimposes the pupil image formed by the first condensing optical system 81A and a pupil image formed by the second condensing optical system 81B to form a composite image. It is equipped with a dichroic mirror DM2.
  • the light flux of the pupil image formed by the first condensing optical system 81A and the light flux of the pupil image formed by the second condensing optical system 81B illuminate the second dichroic mirror DM2. 4, compared to the case where the second dichroic mirror DM2 is used for critical illumination, it is possible to realize illumination light IL having higher luminance and less uneven illuminance.
  • the first enlarging optical system 30A is a lens array having a plurality of lens parts 31A arranged to correspond to each of the light emitting parts 231A
  • the second enlarging optical system 30B is a lens array having a plurality of lens sections 31B arranged so as to correspond to each of the light emitting sections 231B.
  • the lens sections 31A of the first enlarging optical system 30A each enlarge and project the light emitting section 231A at a magnification of (array pitch P1 of the LED chips 23A)/(length a1 of one side of the light emitting surface of the light emitting section 231A). It is a double-sided telecentric optical system.
  • each lens section 31B of the second enlarging optical system 30B projects the light emitting section 231B in an enlarged manner at a magnification of (array pitch P2 of the LED chips 23B)/(length a2 of one side of the light emitting surface of the light emitting section 231B). It is a double-sided telecentric optical system. Thereby, it is possible to form a surface light source in which the enlarged images of the plurality of light emitting parts 231A (231B) are substantially in contact with each other on the predetermined plane PP.
  • the illumination unit 90 includes a fly-eye lens FEL that outputs a light beam of a composite image synthesized by the second dichroic mirror DM2 as a light beam with a uniform illuminance distribution, and a second dichroic mirror DM2. and a double-sided telecentric imaging optical system 83 that projects the synthesized image onto the incident end of the fly's eye lens FEL at the same magnification.
  • the mask MSK can be uniformly illuminated.
  • the incident angle of the light beam of the pupil image formed by the second condensing optical system 81B to the second dichroic mirror DM2 is 35°. Therefore, the light beam of the pupil image formed by the second condensing optical system 81B can be reflected with high efficiency.
  • the light with a peak wavelength of 385 nm emitted from the first light source unit OPU1 is reflected by the first dichroic mirror DM1 and made to enter the second dichroic mirror DM2.
  • the dichroic mirror DM1 may be omitted and the light having a peak wavelength of 385 nm emitted from the first light source unit OPU1 may be made to directly enter the second dichroic mirror DM2.
  • the light emitting section 231A of the LED chip 23A emits light with a peak wavelength of 385 nm
  • the light emitting section 231B of the LED chip 23B emits light with a peak wavelength of 365 nm.
  • the light emitting section 231A may emit light with a peak wavelength of 365 nm
  • the light emitting section 231B of the LED chip 23B may emit light with a peak wavelength of 385 nm.
  • the first dichroic mirror DM1 reflects at least part of the light with a peak wavelength of 365 nm
  • the second dichroic mirror DM2 transmits at least part of the light with a peak wavelength of 365 nm
  • the second dichroic mirror DM2 transmits at least part of the light with a peak wavelength of 385 nm. What is necessary is just to be comprised so that at least a part of may be reflected.
  • the wavelengths of the light emitted by the first light source unit OPU1 and the second light source unit OPU2 are not limited to those described above, and the first light source unit OPU1 and the second light source unit OPU2 may be The light source unit OPU1 and the second light source unit OPU2 may be configured.
  • the first light source unit OPU1 may emit light with a peak wavelength of 405 nm
  • the second light source unit OPU2 may emit light with a peak wavelength of 385 nm.
  • the first light source unit OPU1 may emit light with a peak wavelength of 395 nm
  • the second light source unit OPU2 may emit light with a peak wavelength of 385 nm.
  • the combination of the wavelength of the light emitted from the first light source unit OPU1 and the wavelength of the light emitted from the second light source unit OPU2 is not limited to these examples. Note that if the combination of the wavelength of the light emitted by the first light source unit OPU1 and the wavelength of the light emitted by the second light source unit OPU2 is a combination other than that of the first embodiment, dichroic dichroic may be used as appropriate depending on the wavelength used. It is preferable to change the material of the mirror.
  • the second embodiment differs from the first embodiment in the magnifications M1 and M2 of the light emitting sections 231A and 231B by the first magnification optical system 30A and the second magnification optical system 30B.
  • FIG. 5 is a graph showing an example of the light distribution characteristics of the light emitting section 231A of the LED chip 23A.
  • the solid line indicates the theoretical light distribution characteristics (Lambert radiation) of the light emitting section 231A
  • the dotted line indicates the measurement results obtained by actually measuring the radiation intensity of the light emitted from the light emitting section 231A. This is a curve approximated by a sixth-order polynomial.
  • the radiant intensity of light in the range where the emission angle is greater than -50° and less than 50° is higher than the radiant intensity of Lambertian radiation, and the emission angle is -50°.
  • the radiant intensity of light in the range below 50° and the range above 50° is lower than the radiant intensity of Lambertian radiation.
  • the light emitted from the light emitting section 231A has a range of emission angles in which the radiation intensity is higher than the radiation intensity of Lambertian radiation. Therefore, by using the light whose emission angle is within the range (in the example of FIG. 5, ⁇ 50°) out of the light emitted from the light emitting unit 231A, the light emitted from the first light source unit OPU1 can be It is thought that brightness can be improved.
  • the magnification M1 when the first enlarging optical system 30A enlarges and projects the light emitting section 231A is set so as to satisfy the following formula (1). P1/a1 ⁇ M1 ⁇ sin ⁇ 1 /sin ⁇ 1 ...(1)
  • P1 is the arrangement pitch of the LED chips 23A
  • a1 is the length of one side of the light emitting surface of the light emitting part 231A
  • ⁇ 1 is the radiation intensity of the light emitted from the light emitting part 231A that is higher than Lambertian radiation.
  • the maximum emission angle of light, ⁇ 1 is the maximum emission angle of light emitted from the first enlarging optical system 30A.
  • sin ⁇ 1 is a value that makes the ratio ( ⁇ ) of the numerical aperture of the illumination optical system 80 to the numerical aperture of the projection optical unit 100 to 1.
  • magnification M2 when the second enlarging optical system 30B enlarges and projects the light emitting section 231B is set so as to satisfy the following formula (2).
  • P2 is the arrangement pitch of the LED chips 23B
  • a2 is the length of one side of the light emitting surface of the light emitting part 231B
  • ⁇ 2 is the radiation intensity of the light emitted from the light emitting part 231B that is higher than Lambertian radiation.
  • the maximum output angle of light, ⁇ 2 is the maximum output angle of light output from the second enlarging optical system 30B.
  • sin ⁇ 2 is a value that makes the ratio ( ⁇ ) of the numerical aperture of the illumination optical system 80 to the numerical aperture of the projection optical unit 100 to 1.
  • the peripheral portions of the light emitting surfaces of the light emitting parts 231A and 231B are enlarged at the predetermined surface PP.
  • the enlarged images of the areas except for will touch each other. This point will be explained.
  • FIGS. 6(A) and 6(B) are diagrams illustrating an enlarged image formed on the predetermined plane PP in the second embodiment. More specifically, FIG. 6(A) is a plan view showing the arranged LED chips 23A, and FIG. 6(B) is a plan view showing an enlarged image formed on the predetermined plane PP. To simplify the diagram, the explanation will be made using 2 ⁇ 2 rows of LED chips 23A.
  • the peripheral part of the light emitting surface of the light emitting part 231A of the LED chip 23A is defined as a peripheral region 231b, and the region excluding the peripheral region 231b is defined as a central region 231a.
  • the enlarged images MI1 of the central region 231a touch each other in the predetermined plane PP, as shown in FIG.
  • the enlarged image MI2 of the light emitting portion 231A including the light emitting portion 231a and the peripheral area 231b is formed such that the enlarged image MI2 partially overlaps with the light emitting portion 231A.
  • a surface light source is formed on the predetermined surface PP by light whose radiation intensity is higher than Lambertian radiation. Therefore, it is possible to increase the intensity of light emitted from the first light source unit OPU1 and the second light source unit OPU2.
  • a surface light source is formed by light emitted from a region (central region 231a) that emits light with a radiation intensity higher than Lambertian radiation among the light emitting surfaces of the light emitting parts 231A and 231B, so that the first light source The intensity of light emitted from the unit OPU1 and the second light source unit OPU2 can be increased.
  • FIG. 7(A) is a diagram showing the simulation results.
  • the horizontal axis shows the magnification
  • FIG. 7(A) it was confirmed that by making the magnification M1 larger than P1/a1, the illuminance was improved more than when the magnification M1 was set to P1/a1.
  • FIG. 7(B) is a diagram showing the simulation results.
  • the horizontal axis is the magnification
  • magnifications M1 and M2 it is possible to form a secondary light source with light whose radiation intensity is higher than Lambertian radiation, so that the light emitted from the first light source unit OPU1 and the second light source unit OPU2 is This makes it possible to increase the intensity of light.
  • the positional deviation of the LED chips 23A and 23B may occur. Due to the positional shift, the illuminance of the first light source array 20A and the second light source array 20B may decrease.
  • the magnification M1 and the magnification M2 larger than P1/a1 and P2/a2, respectively, it is possible to use only the inner regions of the light emitting surfaces of the light emitting sections 231A and 231B (regions excluding the peripheral portions). Therefore, even if the LED chips 23A and 23B are misaligned, a decrease in illuminance of the first light source array 20A and the second light source array 20B can be suppressed.
  • sin ⁇ 1 and sin ⁇ 2 are values that make the ratio ( ⁇ ) of the numerical aperture of the illumination optical system 80 to the numerical aperture of the projection optical unit 100 to 1.
  • Exposure device 20A First light source array 20B Second light source array 23A, 23B LED chip 30A First magnifying optical system 30B Second magnifying optical system 31A, 31B Lens section 81A First condensing optical system 81B Second Condensing optical system 90 Illumination unit 100 Projection optical unit PL Projection optical system FEL Fly-eye lens DM2 Second dichroic mirror

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Sources And Details Of Projection-Printing Devices (AREA)

Abstract

La présente unité d'éclairage comprend : un premier réseau de sources lumineuses (20A) dans lequel sont disposés une pluralité de premiers éléments de source lumineuse comportant chacun une première section d'émission lumineuse qui émet de la lumière ayant une première caractéristique de longueur d'onde ; un premier système optique d'agrandissement (30A) qui forme une image agrandie de la première section d'émission lumineuse de chacun des premiers éléments de source lumineuse ; un premier système optique (81A) dans lequel pénètre la lumière provenant du premier système optique d'agrandissement ; un second réseau de sources lumineuses (20B) dans lequel sont disposés une pluralité de seconds éléments de source lumineuse comportant chacun une seconde section d'émission lumineuse qui émet de la lumière ayant une seconde caractéristique de longueur d'onde qui est différente de la première caractéristique de longueur d'onde ; un second système optique d'agrandissement (30B) qui forme une image agrandie de la seconde section d'émission lumineuse de chacun des seconds éléments de source lumineuse ; un second système optique (81B) dans lequel pénètre la lumière provenant du second système optique d'agrandissement ; et un élément optique de combinaison (DM2) qui combine la lumière provenant du premier système optique avec la lumière provenant du second système optique, l'élément optique de combinaison étant situé au niveau de la position focale arrière du premier système optique ou à une position proche de celle-ci et au niveau de la position focale arrière du second système optique ou à une position proche de celle-ci.
PCT/JP2022/031205 2022-08-18 2022-08-18 Unité d'éclairage, dispositif d'exposition et procédé d'exposition WO2024038535A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/031205 WO2024038535A1 (fr) 2022-08-18 2022-08-18 Unité d'éclairage, dispositif d'exposition et procédé d'exposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/031205 WO2024038535A1 (fr) 2022-08-18 2022-08-18 Unité d'éclairage, dispositif d'exposition et procédé d'exposition

Publications (1)

Publication Number Publication Date
WO2024038535A1 true WO2024038535A1 (fr) 2024-02-22

Family

ID=89941584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/031205 WO2024038535A1 (fr) 2022-08-18 2022-08-18 Unité d'éclairage, dispositif d'exposition et procédé d'exposition

Country Status (1)

Country Link
WO (1) WO2024038535A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332077A (ja) * 2005-05-23 2006-12-07 Nikon Corp 光源ユニット、照明光学装置、露光装置、および露光方法
JP2012063390A (ja) * 2010-09-14 2012-03-29 Dainippon Screen Mfg Co Ltd 露光装置および光源装置
JP2014207300A (ja) * 2013-04-12 2014-10-30 株式会社オーク製作所 光源装置および露光装置
JP2021189395A (ja) * 2020-06-04 2021-12-13 セイコーエプソン株式会社 照明装置およびプロジェクター

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332077A (ja) * 2005-05-23 2006-12-07 Nikon Corp 光源ユニット、照明光学装置、露光装置、および露光方法
JP2012063390A (ja) * 2010-09-14 2012-03-29 Dainippon Screen Mfg Co Ltd 露光装置および光源装置
JP2014207300A (ja) * 2013-04-12 2014-10-30 株式会社オーク製作所 光源装置および露光装置
JP2021189395A (ja) * 2020-06-04 2021-12-13 セイコーエプソン株式会社 照明装置およびプロジェクター

Similar Documents

Publication Publication Date Title
JP5326259B2 (ja) 照明光学装置、露光装置、およびデバイス製造方法
JP4678493B2 (ja) 光源ユニット、照明光学装置、露光装置、および露光方法
JP4324957B2 (ja) 照明光学装置、露光装置および露光方法
US11353795B2 (en) Light source apparatus, optical apparatus, exposure apparatus, device manufacturing method, illuminating method, exposure method, and method for manufacturing optical apparatus
JP5500454B2 (ja) オプティカルインテグレータ、照明光学装置、露光装置、露光方法、およびデバイス製造方法
CN1797214A (zh) 光刻设备和器件制造方法
JP6651124B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2002050564A (ja) 照明装置、投影露光装置並びにそれを用いたデバイス製造方法
JP2004055856A (ja) 照明装置、それを用いた露光装置及びデバイス製造方法
KR20010039943A (ko) 노광방법 및 노광장치
WO2024038535A1 (fr) Unité d'éclairage, dispositif d'exposition et procédé d'exposition
WO2024038533A1 (fr) Unité de source de lumière, unité d'éclairage, dispositif d'exposition et procédé d'exposition
US7292316B2 (en) Illumination optical system and exposure apparatus having the same
WO2024038538A1 (fr) Unité de source de lumière, unité d'éclairage, et dispositif ainsi que procédé d'exposition
WO2024089737A1 (fr) Élément optique synthétique, unité d'éclairage, dispositif d'exposition et procédé d'exposition
JP4110606B2 (ja) 走査型露光装置および露光方法
WO2024038537A1 (fr) Unité de source de lumière, unité d'éclairage, et dispositif ainsi que procédé d'exposition
JP2004207343A (ja) 照明光源、照明装置、露光装置及び露光方法
JP7340167B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP4505666B2 (ja) 露光装置、照明装置及びマイクロデバイスの製造方法
JP2011119596A (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2002350620A (ja) 光学部材、当該光学部材を用いた照明装置及び露光装置
JP2005150541A (ja) 照明光学装置、露光装置および露光方法
JP5682799B2 (ja) 照明光学系、露光装置、およびデバイス製造方法
JP2021170126A (ja) 照明光学系、露光装置、およびデバイス製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22955709

Country of ref document: EP

Kind code of ref document: A1