WO2024036705A1 - 一种mems器件的制造方法及mems器件 - Google Patents

一种mems器件的制造方法及mems器件 Download PDF

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Publication number
WO2024036705A1
WO2024036705A1 PCT/CN2022/121224 CN2022121224W WO2024036705A1 WO 2024036705 A1 WO2024036705 A1 WO 2024036705A1 CN 2022121224 W CN2022121224 W CN 2022121224W WO 2024036705 A1 WO2024036705 A1 WO 2024036705A1
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WIPO (PCT)
Prior art keywords
mems device
layer
film
sacrificial layer
sealing
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PCT/CN2022/121224
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English (en)
French (fr)
Inventor
張秉和
黎家健
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AAC Technologies Holdings Shenzhen Co Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
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Priority to JP2022576567A priority Critical patent/JP7696372B2/ja
Priority to US18/073,472 priority patent/US12384673B2/en
Publication of WO2024036705A1 publication Critical patent/WO2024036705A1/zh
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00341—Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261

Definitions

  • the present application relates to the field of sealing technology, and in particular to a manufacturing method of a MEMS device and a MEMS device.
  • the sealing treatment method for the internal cavity of the device is to deposit a thin film layer on the top of the cavity.
  • the thin film layer has an exhaust hole formed by an etching process. After the gas is discharged from the internal cavity of the device, it is then The film seals the vent to seal small cavities.
  • CMOS metal oxide semiconductor
  • a first aspect of this application provides a method for manufacturing a MEMS device.
  • the manufacturing method includes depositing a thin film on at least part of the surface of a sacrificial layer, processing a through hole in the thin film, removing at least part of the material covered by the thin film in the sacrificial layer, and sacrificially The removed material in the layer is discharged from the through hole to form a cavity in the sacrificial layer, and a sealing layer is deposited on the surface of the film facing away from the sacrificial layer to seal the through hole.
  • a structural layer is deposited on at least part of the surface of the sacrificial layer, wherein the structural layer has a hollow portion, and at least part of the material of the film is exposed through the hollow portion.
  • At least part of the material covering the film in the structural layer is removed to form the hollow part.
  • the film is made of one of silicon-based materials, polymers, or metals.
  • laser drilling or surface ablation is used to create through-holes in the film.
  • the manufacturing method of MEMS devices is completed in a vacuum environment.
  • the second aspect of this application provides a MEMS device, which is produced by the method in the above content and has the above effects.
  • the MEMS device includes a sacrificial layer, a thin film, a structural layer and a sealing layer.
  • the sacrificial layer has a cavity
  • the film is arranged on the side of the sacrificial layer with the cavity and covers the cavity
  • the film has a through hole
  • the through hole is connected to the cavity
  • the structural layer is arranged on the side of the sacrificial layer with the cavity
  • the sealing layer includes a first sealing part.
  • the first sealing part is disposed on a side of the film facing away from the sacrificial layer. The first sealing part blocks the through hole.
  • the structural layer is provided with a hollow portion, the hollow portion is adjacent to a side of the film facing away from the sacrificial layer, and the first sealing portion fills at least part of the space of the hollow portion.
  • the sealing layer further includes a second sealing part.
  • the second sealing part is provided on a side of the structural layer away from the sacrificial layer.
  • the first sealing part and the second sealing part are connected through a connecting part.
  • the first sealing part and the first sealing part form a recessed part.
  • the thickness of the structural layer is greater than the thickness of the film.
  • the manufacturing method of the present application only requires the deposition of a thin film, shortens the production cycle, and has reliable on-site sealing capabilities.
  • Figure 1 shows the structure of a MEMS device in the prior art
  • Figure 2 shows the manufacturing method of the MEMS device provided by this application
  • FIG. 3 is a schematic structural diagram of the MEMS device in step S1;
  • FIG. 4 is a schematic structural diagram of the MEMS device in step S3;
  • FIG. 5 is a schematic structural diagram of the MEMS device in step S4;
  • FIG. 6 is a schematic structural diagram of the MEMS device in step S5;
  • Figure 7 is a schematic structural diagram of the MEMS device in step S2, in which the structural layer does not have a hollow portion;
  • Figure 8 is a schematic structural diagram of the MEMS device in step S2, in which the structural layer has a hollow portion;
  • Micro-Electro-Mechanical System refers to high-tech devices with dimensions of several millimeters or less, and their internal structures are generally on the micron or even nanometer scale. There are suspended structures in MEMS devices, and a sacrificial layer removal process is generally used to manufacture the suspended structures.
  • a MEMS device is manufactured using the method of the prior art.
  • an etching process is used to remove part of the material inside the sacrificial layer 10 , and a cavity 101 is formed in the sacrificial layer 10 .
  • a thin film 20 is deposited on the top of the cavity 101 , and an etching process is used to remove part of the material of the thin film 20 to form a through hole 201 .
  • the gas in the cavity 101 is discharged from the through hole 201, and then the sealing layer 40 is used to seal the through hole 201, thereby completing the sealing of the cavity 101.
  • a structural layer 30 is also deposited on the side of the sacrificial layer 10 where the cavity 101 is provided.
  • the thin film 20 is penetrated in the structural layer 30, and the thickness of the structural layer 30 is the same as the thickness of the thin film 20.
  • the MEMS device is processed by planarization (Chemical Mechanical Polishing, CMP).
  • CMP Complementary Mechanical Polishing
  • the manufacturing method in the prior art requires planarization processing (Chemical Mechanical Polishing (CMP), which can easily lead to structural defects (such as holes, cracks or delamination).
  • CMP Complement Mechanical Polishing
  • the manufacturing method in the prior art is limited to using silicon-based materials to make the film 20. Since the thermal expansion coefficient is different from that of other materials, it is easy to cause structural defects (such as cracks and delamination) in the film 20.
  • the present application provides a manufacturing method of a MEMS device. Please refer to the flow chart shown in Figure 2 and the structural changes of the MEMS device during the processing shown in Figures 3 to 6.
  • the method includes follow these steps:
  • Step S1 deposit thin film 2 on at least part of the surface of sacrificial layer 1.
  • Step S3 Process the through hole 21 in the film 2.
  • Step S4 Remove at least part of the material in the sacrificial layer 1 covered by the film 2, and the removed material in the sacrificial layer 1 is discharged from the through hole 21 to form a cavity 11 in the sacrificial layer 1.
  • Step S5 Deposit the sealing layer 4 on the surface of the film 2 away from the sacrificial layer 1 to seal the through hole 21.
  • thin film 2 is first deposited on the surface of sacrificial layer 1, and then as shown in Figure 4, through holes 21 are processed in film 2, as shown in Figure 5, and then the sacrificial layer is removed At least part of the material in 1 covered by the film 2, the removed material in the sacrificial layer 1 is discharged from the through hole 21 to form a cavity 11 in the sacrificial layer 1, please refer to Figure 6, in the film 2 away from the sacrificial layer
  • the sealing layer 4 is deposited on the surface of 1 to seal the through hole 21, thereby completing the sealing of the cavity 11.
  • the manufacturing method of the embodiment of the present application only needs to deposit a layer of thin film 2, shortens the production cycle, and has reliable on-site sealing capability.
  • step S3 processing the through hole 21 in the film 2
  • step S2 there is a step S2:
  • the structural layer 3 is deposited on at least part of the surface of the sacrificial layer 1 .
  • the structural layer 3 has a hollow portion 31 through which at least part of the material of the film 2 passes. The hollow portion 31 is exposed to facilitate processing of the through hole 21 on the film 2 in step S3.
  • multiple structural layers 3 can be deposited on the surface of the sacrificial layer 1 , and there is a gap between two adjacent structural layers 3 to form a hollow portion 31 .
  • the hollow portion 31 is formed by removing part of the material of the structural layer 3 .
  • a gas etching process may be used to remove part of the material of the structural layer 3 , thereby forming the hollow portion 31 .
  • the material of the structural layer 3 may be silicon oxide, metal oxide, or a material with a thermal expansion coefficient close to that of silicon oxide.
  • the thermal expansion coefficient of the material of the structural layer 3 is close to that of the film 2, and/or when the thermal expansion coefficient of the material of the structural layer 3 is close to that of the sealing layer 4, it is less likely to cause material defects due to a large difference in thermal expansion coefficient. (such as holes, cracks or delamination), reducing the possibility of sealing failure, and the MEMS devices produced have higher operational reliability and service life.
  • the manufacturing method of the embodiment of the present application expands the manufacturing process of the structural layer 3 and reduces the manufacturing limitations of MEMS devices.
  • the silicon oxide may include silicon dioxide (SiO 2 ), tetraethoxysilane (TEOS), and polycrystalline silicon (Poly-Si).
  • Polymers may include polyimide, silicon on glass, and parylene.
  • Metal oxides may include aluminum oxide (Al 2 O 3 ), titanium dioxide (TiO 2 ).
  • step S2 also includes step S2.1. Please refer to Figures 7-8. After depositing the structural layer 3 on at least part of the surface of the sacrificial layer 1, remove the structural layer 3. At least part of the material of the film 2 is covered to form a hollow portion 31 .
  • the structural layer 3 is deposited on at least part of the surface of the sacrificial layer 1.
  • the structural layer 3 will also cover the thin film 2. At least part of the material covering the thin film 2 in the structural layer 3 is removed. , to form the hollow portion 31 , so that at least part of the material of the film 2 is exposed through the hollow portion 31 to facilitate step S3 (processing the through hole 21 on the film 2 ).
  • Figures 8 and 9 please refer to Figures 8 and 9 to remove part of the material covering the film 2 in the structural layer 3, so that the structural layer 3 has a step 32, and the edge of the film 2 is located within the step 32, so that The edge of the film 2 is pressed by the structural layer 3 to reduce the possibility of the film 2 falling off from the hollow portion 31 .
  • the material of the film 2 is silicon-based material. material), polymer material (polymer material) or metal material (Metal material).
  • silicon-based materials can include silicon dioxide (SiO 2 ), silicon nitride (Si3N4), tetraethoxysilane (TEOS), polycrystalline silicon (Poly-Si), and amorphous silicon (a-Si).
  • Polymer materials may include polyimide, silicon-on-glass bonded structural materials (Silicon On Glass), and parylene.
  • Metal materials may include aluminum oxide (Al 2 O 3 ), titanium nitride (TiN), tantalum nitride (TaN), and titanium dioxide (TiO 2 ).
  • a material whose thermal expansion coefficient is close to that of the structural layer 3 can be selected to make the film 2
  • a material whose thermal expansion coefficient is close to that of the sealing layer 4 can be selected to make the film 2, so that the thermal expansion coefficient is not easily affected by large differences.
  • the occurrence of material defects reduces the possibility of seal failure, and the MEMS devices produced have higher operational reliability and service life.
  • the manufacturing method of the embodiment of the present application expands the materials that can be made of the film 2, further expands the process method that can process the through hole 21, and reduces the cost of the MEMS device. Production restrictions.
  • the through hole 21 can be made.
  • the film 2 when the film 2 is made of metal material, during the sealing process of the through hole 21 of the film 2 by the sealing layer 4, the film 2 can withstand higher temperatures and is less prone to defects or delamination problems, making the MEMS device reliable. High performance and service life.
  • step S3 laser drilling or surface ablation is used to process the through hole 21 in the film 2 .
  • FIG. 3 please refer to Figures 3 and 4.
  • Laser drilling or surface ablation is used to create a through hole 21 on the film 2.
  • the diameter of the through hole 21 is in the submicron range or the nanometer range, so that the When the sealing layer 4 is used to seal the through hole 21, material defects (holes and cracks) are less likely to occur, and delamination between the sealing layer 4 and the film 2 is less likely to occur.
  • the MEMS device produced has higher operating reliability and a longer service life. longer.
  • the method of the embodiment of the present application can adjust the size of the through hole 21 according to the area or depth of the material to be removed in the sacrificial layer 1, and control the time when the material to be removed in the sacrificial layer 1 is released from the through hole 21.
  • the manufacturing process is relatively flexible. Can meet the needs of different users.
  • the above steps are completed in a vacuum environment to produce the MEMS device, thereby drying the moisture and/or organic gas in the cavity 11, so as to maintain the working performance of the MEMS device at a stable level and improve the working reliability of the MEMS device. and service life.
  • the manufacturing method of the embodiment of the present application does not require planarization of the MEMS device, and is not likely to cause defects in the oxide material (such as holes, cracks or delamination), making the working reliability of the MEMS device and Longer service life.
  • Utilizing the manufacturing method of the embodiment of the present application also has the following advantages: it can be used with complementary metal oxide semiconductor (Complementary metal oxide semiconductor) metal oxide semiconductor (CMOS) process and is easy to integrate with Si-based fabrication flows, helping to shorten production cycle times.
  • CMOS complementary metal oxide semiconductor
  • a second aspect of the present application provides a MEMS device, as shown in FIG. 6 .
  • the MEMS device is manufactured using the above-mentioned manufacturing method of the MEMS device.
  • the MEMS device includes a sacrificial layer 1 , a thin film 2 , a structural layer 3 and a sealing layer 4 .
  • the sacrificial layer 1 has a cavity 11
  • the film 2 is disposed on the side of the sacrificial layer 1 where the cavity 11 is provided, and covers the cavity 11
  • the film 2 has a through hole 21
  • the through hole 21 communicates with the cavity 11 .
  • the structural layer 3 is provided on the side of the sacrificial layer 1 where the cavity 11 is provided.
  • the sealing layer 4 includes a first sealing portion 41 , which is disposed on a side of the film 2 away from the sacrificial layer 1 .
  • the first sealing portion 41 blocks the through hole 21 .
  • the MEMS device in the embodiment of the present application is manufactured by the manufacturing method in the above content and has the effects of the above content, which will not be described again here.
  • the structural layer 3 is provided with a hollow portion 31 , the hollow portion 31 is adjacent to the side of the film 2 away from the sacrificial layer 1 , and the first sealing portion 41 fills at least part of the space of the hollow portion 31 for The through hole 21 of the film 2 is sealed, thereby completing the sealing of the cavity 11 .
  • the first sealing part 41 can fill part of the space of the hollow part 31 . In another embodiment (not shown in the figure), the first sealing part 41 may fill all the spaces of the hollow part 31 .
  • the sealing layer 4 also includes a second sealing part 42 .
  • the second sealing part 42 is disposed on the side of the structural layer 3 away from the sacrificial layer 1 .
  • the first sealing part 41 and the second sealing part The connecting portion 42 is connected through the connecting portion 43, and the connecting portion 43 and the first sealing portion 41 form a recessed portion.
  • the second sealing part 42 is used to isolate the structural layer 3 from other substances, thereby ensuring the working performance of the structural layer 3 .
  • the thickness of the structural layer 3 is greater than the thickness of the film 2.
  • the thickness of the structural layer 3 is on the micron level, and the thickness of the film 2 is on the nanometer level. When the thickness of the film 2 is on the nanometer scale, it is convenient to observe the formation process of the cavity 11 in the sacrificial layer 1 and whether the inside of the cavity 11 is clean.

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Abstract

一种MEMS器件的制造方法及MEMS器件，方法包括在牺牲层（1）的表面的至少部分沉积薄膜（2），在薄膜（2）加工出通孔（21），去除牺牲层（1）中被薄膜（2）所覆盖的至少部分材料，牺牲层（1）中被去除的材料从通孔（21）排出，以在牺牲层（1）形成空腔（11），在薄膜（2）的背离牺牲层（1）的表面沉积密封层（4），密封通孔（21）。仅需沉积一层薄膜（2），能缩短生产周期，并且具有可靠的现场密封能力。

Description

一种MEMS器件的制造方法及MEMS器件 技术领域
本申请涉及密封技术领域，尤其涉及一种MEMS器件的制造方法及MEMS器件。
 背景技术
现有技术中对器件内部空腔的密封处理方法是在空腔的顶部沉积一层薄膜层，该薄膜层具有利用刻蚀工艺形成的排气孔，当器件内部空腔排出气体后，再用贴膜密封住排气孔，以实现小型空腔密封。
 技术问题
现有技术方法需要特定的硅基材料/工具，并且工艺周期时间较长，虽然有一些实际应用是通过晶圆键合和薄膜封装来实现密封，但制作成本和维护工作都大大增加，甚至在基于互补金属氧化物半导体（Complementary metal oxide semiconductor，CMOS）的前道工艺过程（Front end of the line，FEOL）中存在工艺/材料限制。
 技术解决方案
本申请第一方面提供一种MEMS器件的制造方法，该制造方法包括在牺牲层的表面的至少部分沉积薄膜，在薄膜加工出通孔，去除牺牲层中被薄膜所覆盖的至少部分材料，牺牲层中被去除的材料从通孔排出，以在牺牲层形成空腔，在薄膜的背离牺牲层的表面沉积密封层，密封通孔。
在一种可能的设计中，在薄膜加工出通孔之前，在牺牲层的表面的至少部分沉积结构层，其中，结构层具有镂空部，薄膜的至少部分材料通过镂空部裸露。
在一种可能的设计中，在牺牲层的表面的至少部分沉积结构层之后，去除结构层中覆盖薄膜的至少部分材料，以形成镂空部。
在一种可能的设计中，薄膜的材料为硅基材料、聚合物或金属中的一种。
在一种可能的设计中，利用激光钻孔或表面烧蚀在薄膜加工出通孔。
在一种可能的设计中，MEMS器件的制造方法在真空环境中完成。
本申请第二方面提供一种MEMS器件，采用上述内容中的方法制作，具有上述效果，MEMS器件包括牺牲层、薄膜、结构层和密封层。牺牲层具有空腔，薄膜设置于牺牲层设置有空腔的一侧，且覆盖空腔，薄膜具有通孔，通孔与空腔连通，结构层设置于牺牲层设置有空腔的一侧，密封层包括第一密封部，第一密封部设置于薄膜背离牺牲层的一侧，第一密封部封堵通孔。
在一种可能的设计中，结构层设置有镂空部，镂空部邻接于薄膜背离牺牲层的一侧，第一密封部填充于镂空部的至少部分空间。
在一种可能的设计中，密封层还包括第二密封部，第二密封部设置于结构层的背离牺牲层的一侧，第一密封部与第二密封部之间通过连接部连接，连接部与第一密封部围成凹陷部。
在一种可能的设计中，结构层的厚度大于薄膜的厚度。
 有益效果
相比现有技术中的制造方法，本申请的制造方法仅需沉积一层薄膜，缩短生产周期，并且具有可靠的现场密封能力。
 附图说明
图1为现有技术中MEMS器件的结构；
图2为本申请所提供的MEMS器件的制造方法；
图3为在步骤S1中MEMS器件的结构示意图；
图4为在步骤S3中MEMS器件的结构示意图；
图5为在步骤S4中MEMS器件的结构示意图；
图6为在步骤S5中MEMS器件的结构示意图；
图7为在步骤S2中MEMS器件的结构示意图，其中，结构层未具有镂空部；
图8为在步骤S2中MEMS器件的结构示意图，其中，结构层具有镂空部；
图9中步骤S2中MEMS器件的结构示意图，其中，薄膜未显示。
附图标记：
10-牺牲层；101-空腔；20-薄膜；201-通孔；30-结构层；40-密封层；
1-牺牲层；11-空腔；
2-薄膜；21-通孔；
3-结构层；31-镂空部；32-台阶；
4-密封层；41-第一密封部；42-第二密封部；43-连接部。
 本发明的最佳实施方式
为了更好的理解本申请的技术方案，下面结合附图对本申请实施例进行详细描述。
应当明确，所描述的实施例仅仅是本申请一部分实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。
在一种具体实施例中，下面通过具体的实施例并结合附图对本申请做进一步的详细描述。
微电子机械系统（Micro-Electro-Mechanical System，MEMS）是指尺寸在几毫米乃至更小的高科技装置，其内部结构一般在微米甚至纳米量级。在MEMS器件中具有悬空的结构，一般采用牺牲层去除工艺来制造悬空的结构。
请参照图1所示利用现有技术的方法制作MEMS器件，首先利用蚀刻工艺去除牺牲层10内部分材料，在牺牲层10形成空腔101。在空腔101顶部沉积薄膜20，其中，利用蚀刻工艺去除薄膜20的部分材料，以形成通孔201。然后将空腔101内的气体从通孔201中排出，再利用密封层40密封通孔201，完成对空腔101的密封。其中，在牺牲层10设有空腔101的一侧还沉积有结构层30，薄膜20穿设在结构层30中，且结构层30的厚度与薄膜20的厚度相同。在密封通孔201后，利用平坦化（Chemical Mechanical Polishing，CMP）处理MEMS器件。申请人经过研究发现利用现有技术中的制造方法在空腔101排气后不能实现现场密封，导致生产周期时间较长。而且现有技术中的制造方法需要平坦化处理（Chemical Mechanical Polishing，CMP），容易导致结构缺陷问题（例如孔洞、裂缝或脱层）。另外，现有技术中的制造方法限定使用硅系材料制作薄膜20，因与其它材料的热膨胀系数不同，容易导致薄膜20存在结构缺陷（例如裂缝和脱层）。
为解决上述至少一种问题，本申请提供一种MEMS器件的制造方法，请参照图2所示的流程图以及图3-图6所示的MEMS器件在加工过程中的结构变化，该方法包括如下步骤：
步骤S1：在牺牲层1的表面的至少部分沉积薄膜2。
步骤S3：在薄膜2加工出通孔21。
步骤S4：去除牺牲层1中被薄膜2所覆盖的至少部分材料，牺牲层1中被去除的材料从通孔21排出，以在牺牲层1形成空腔11。
步骤S5：在薄膜2的背离牺牲层1的表面沉积密封层4，密封通孔21。
本实施例中，请参照图3所示，先在牺牲层1表面沉积薄膜2，然后请参照图4所示，在薄膜2加工出通孔21，请参照图5所示，再去除牺牲层1中被薄膜2所覆盖的至少部分材料，牺牲层1中被去除的材料从通孔21排出，以在牺牲层1形成空腔11，请参照图6所示，在薄膜2的背离牺牲层1的表面沉积密封层4，密封通孔21，从而完成对空腔11的密封。相比现有技术中的制造方法，本申请实施例的制造方法仅需沉积一层薄膜2，缩短生产周期，并且具有可靠的现场密封能力。
具体地，请参照图2所示，在步骤S3（在薄膜2加工出通孔21）之前还有步骤S2：
本实施例中，请参照图7所示，在牺牲层1的表面的至少部分沉积结构层3，其中，请参照图8所示，结构层3具有镂空部31，薄膜2的至少部分材料通过镂空部31裸露，便于在步骤S3中在薄膜2上加工出通孔21。
其中，可以在牺牲层1表面沉积多个结构层3，相邻两个结构层3之间具有间隔以形成镂空部31。或者，通过去除结构层3的部分材料，以形成镂空部31。具体地，可以使用气体蚀刻工艺去除结构层3的部分材料，从而形成镂空部31。
另外，结构层3的材料可以为硅氧化物、金属氧化物或者与硅氧化物的热膨胀系数材料接近的材料。一方面，当结构层3的材料的热膨胀系数与薄膜2接近时，和/或，结构层3的材料的热膨胀系数与密封层4接近时，不容易因热膨胀系数差异较大而产生材料缺陷问题（例如孔洞、裂缝或脱层），降低密封失效的可能性，所制作的MEMS器件的工作可靠性和使用寿命较高。另一方面，本申请实施例的制造方法拓展了结构层3的制作工艺，减少MEMS器件的制作限制。
其中，硅氧化物可以包括二氧化硅（SiO 2）、四乙氧基硅烷（TEOS）、多晶硅（Poly-Si）。聚合物可以包括聚酰亚胺（polyimide）、硅-玻璃键合结构材料（Silicon On Glass）、聚对二甲苯基（parylene）。金属氧化物可以包括氧化铝（Al 2O 3）、二氧化钛（TiO 2）。
更具体地，本实施例中，在步骤S2中还包括步骤S2.1，请参照图7-图8所示，在牺牲层1的表面的至少部分沉积结构层3之后，去除结构层3中覆盖薄膜2的至少部分材料，以形成镂空部31。
本实施例中，请参照图7-图8所示，在牺牲层1的表面的至少部分沉积结构层3，结构层3也会覆盖薄膜2，去除结构层3中覆盖薄膜2的至少部分材料，以形成镂空部31，从而使薄膜2的至少部分材料通过镂空部31裸露，便于进行步骤S3（在薄膜2上加工出通孔21）。
其中，在一种实施例中，请参照图8-图9所示，去除结构层3中覆盖薄膜2的部分材料，以使得结构层3具有台阶32，薄膜2的边缘位于台阶32内，以便通过结构层3压住薄膜2的边缘，降低薄膜2从镂空部31中脱落的可能性。
在另外一种实施例中（图中未示出），去除结构层3中覆盖薄膜2的所有材料，以形成镂空部31，则没有台阶32，结构层3不会压住薄膜2的边缘。
在上述实施例中，薄膜2的材料为硅基材料（silicon-based material）、聚合物材料（polymer material）或金属材料（Metal material）中的一种。
其中，硅基材料可以包括二氧化硅（SiO 2）、氮化硅（Si₃N₄）、四乙氧基硅烷（TEOS）、多晶硅（Poly-Si）、非晶硅（a-Si）。聚合物材料可以包括聚酰亚胺（polyimide）、硅-玻璃键合结构材料（Silicon On Glass）、聚对二甲苯基（parylene）。金属材料可以包括氧化铝（Al 2O 3）、氮化钛（TiN）、氮化钽（TaN）、二氧化钛（TiO 2）。
在上述薄膜2的材料中，可以选择与结构层3的热膨胀系数接近的材料制作薄膜2，或者，可以选择与密封层4的热膨胀系数接近的材料制作薄膜2，不容易因热膨胀系数差异较大而产生材料缺陷问题（例如孔洞、裂缝或脱层），降低密封失效的可能性，所制作的MEMS器件的工作可靠性和使用寿命较高。另一方面，相比现有技术方法限定使用硅基材料，本申请实施例的制造方法拓展了薄膜2的可制作材料，进一步地拓展了可以加工出通孔21的工艺方法，减少MEMS器件的制作限制。
其中，采用硅基材料制作薄膜2时，可以利用干法刻蚀工艺制作通孔21、采用聚合物材料制作薄膜2时，可以利用光刻或激光工艺制作通孔21，采用金属材料制作薄膜2时，可以利用湿式蚀刻工艺制作通孔21。
另外，当利用金属材料制作薄膜2时，薄膜2的通孔21在被密封层4密封过程中，薄膜2能够承受更高的温度，不易产生缺陷或脱层的问题，使得MEMS器件的工作可靠性和使用寿命较高。
在上述实施例中，请参照图3-图4所示，在步骤S3中，利用激光钻孔或表面烧蚀在薄膜2加工出通孔21。
本实施例中，请参照图3-图4所示，利用激光钻孔或表面烧蚀在薄膜2上制作通孔21，通孔21的直径在亚微米范围内或纳米范围内，以使在利用密封层4密封通孔21时，不易出现材料缺陷问题（孔洞和裂缝），也不容易出现密封层4与薄膜2分层的问题，所制作的MEMS器件的工作可靠性更高且使用寿命更长。
本申请实施例方法可根据牺牲层1中所要去除材料的面积或深度的大小，调整通孔21的尺寸，控制牺牲层1中所要去除材料从通孔21释放的时间，其制作过程较为灵活，可以满足不同用户的使用需求。
在上述实施例中，在真空环境完成上述步骤制作MEMS器件，从而干燥空腔11内的水分和/或有机气体，以使MEMS器件的工作性能保持在稳定的水平，提高MEMS器件的工作可靠性和使用寿命。
在上述实施例中，本申请实施例的制造方法无需对MEMS器件进行平坦化处理，不易衍生出氧化物材料存在缺陷的问题（例如孔洞、裂缝或脱层），使得MEMS器件的工作可靠性和使用寿命较高。
利用本申请实施例的制造方法还具有如下优势，可以与互补金属氧化物半导体（Complementary metal oxide semiconductor，CMOS）工艺兼容，易于与基于硅的制造流程（Si-based fabrication flows）集成，有助于缩短生产周期时间。
本申请第二方面提供一种MEMS器件，请参照图6所示，该MEMS器件利用上述MEMS器件的制造方法制备，该MEMS器件包括牺牲层1、薄膜2、结构层3和密封层4。牺牲层1具有空腔11，薄膜2设置于牺牲层1设置有空腔11的一侧，且覆盖空腔11，薄膜2具有通孔21，通孔21与空腔11连通。结构层3设置于牺牲层1设置有空腔11的一侧。密封层4包括第一密封部41，第一密封部41设置于薄膜2背离牺牲层1的一侧，第一密封部41封堵通孔21。本申请实施例的MEMS器件由上述内容中的制造方法制作，具有上述内容的效果，此处不再赘述。
具体地，请参照图6所示，结构层3设置有镂空部31，镂空部31邻接薄膜2背离牺牲层1的一侧，第一密封部41填充于镂空部31的至少部分空间，用于密封薄膜2的通孔21，从而完成对空腔11的密封。
其中，在一种实施例中，请参照图6所示，第一密封部41可以填充镂空部31的部分空间。在另一种实施例中（图中未示出），第一密封部41可以填充镂空部31的所有空间。
更具体地，请参照图6所示，密封层4还包括第二密封部42，第二密封部42设置于结构层3的背离牺牲层1的一侧，第一密封部41与第二密封部42通过连接部43连接，连接部43与第一密封部41围成凹陷部。
本实施例中，请参照图6所示，第二密封部42用于使结构层3与其它物质隔绝，从而保证结构层3的工作性能。
请参照图6所示，结构层3的厚度大于薄膜2的厚度，结构层3的厚度为微米级，薄膜2的厚度为纳米级。当薄膜2的厚度为纳米级时，便于观察牺牲层1中空腔11的形成过程以及空腔11内部是否干净。
需要指出的是，本专利申请文件的一部分包含受著作权保护的内容。除了对专利局的专利文件或记录的专利文档内容制作副本以外，著作权人保留著作权。

Claims (10)

  1. 一种MEMS器件的制造方法，其特征在于，所述制造方法包括：
    在牺牲层的表面的至少部分沉积薄膜；
    在所述薄膜加工出通孔；
    去除所述牺牲层中被所述薄膜所覆盖的至少部分材料，所述牺牲层中被去除的材料从所述通孔排出，以在所述牺牲层形成空腔；
    在所述薄膜的背离所述牺牲层的表面沉积密封层，密封所述通孔。
  2. 根据权利要求1所述的MEMS器件的制造方法，其特征在于，在所述薄膜加工出所述通孔之前，在所述牺牲层的表面的至少部分沉积结构层；
    其中，所述结构层具有镂空部，所述薄膜的至少部分材料通过所述镂空部裸露。
  3. 根据权利要求2所述的MEMS器件的制造方法，其特征在于，在所述牺牲层的表面的至少部分沉积所述结构层之后，去除所述结构层中覆盖所述薄膜的至少部分材料，以形成所述镂空部。
  4. 根据权利要求1-3中任一项所述的MEMS器件的制造方法，其特征在于，所述薄膜的材料为硅基材料、聚合物或金属中的一种。
  5. 根据权利要求1-3中任一项所述的MEMS器件的制造方法，其特征在于，利用激光钻孔或表面烧蚀在所述薄膜加工出所述通孔。
  6. 根据权利要求1-3中任一项所述的MEMS器件的制造方法，其特征在于，所述MEMS器件的制造方法在真空环境中完成。
  7. 一种MEMS器件，其特征在于，所述MEMS器件采用权利要求1-6中任一项所述的MEMS器件的制造方法制作，所述MEMS器件包括：
    牺牲层，所述牺牲层具有空腔；
    薄膜，所述薄膜设置于所述牺牲层设置有所述空腔的一侧，且覆盖所述空腔，所述薄膜具有通孔，所述通孔与所述空腔连通；
    结构层，所述结构层设置于所述牺牲层设置有所述空腔的一侧；
    密封层，所述密封层包括第一密封部，所述第一密封部设置于所述薄膜背离所述牺牲层的一侧，所述第一密封部封堵所述通孔。
  8. 根据权利要求7所述的MEMS器件，其特征在于，所述结构层设置有镂空部，所述镂空部邻接于所述薄膜背离所述牺牲层的一侧；
    所述第一密封部填充于所述镂空部的至少部分空间。
  9. 根据权利要求8所述的MEMS器件，其特征在于，所述密封层还包括第二密封部，所述第二密封部设置于所述结构层的背离所述牺牲层的一侧；
    所述第一密封部与所述第二密封部之间通过连接部连接，所述连接部与所述第一密封部围成凹陷部。
  10. 根据权利要求7所述的MEMS器件，其特征在于，所述结构层的厚度大于所述薄膜的厚度。
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