WO2024034359A1 - Dispositif à semi-conducteurs - Google Patents

Dispositif à semi-conducteurs Download PDF

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Publication number
WO2024034359A1
WO2024034359A1 PCT/JP2023/026762 JP2023026762W WO2024034359A1 WO 2024034359 A1 WO2024034359 A1 WO 2024034359A1 JP 2023026762 W JP2023026762 W JP 2023026762W WO 2024034359 A1 WO2024034359 A1 WO 2024034359A1
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WIPO (PCT)
Prior art keywords
terminal
semiconductor device
electrode
conductive member
sealing resin
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PCT/JP2023/026762
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English (en)
Japanese (ja)
Inventor
敦司 山口
洋平 中村
尚孝 黒田
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ローム株式会社
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Publication of WO2024034359A1 publication Critical patent/WO2024034359A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 discloses an example of a semiconductor device equipped with a MOSFET.
  • the semiconductor device includes a drain terminal to which a power supply voltage is applied, a gate terminal for inputting an electrical signal to the MOSFET, and a terminal for converting the converted power after the power corresponding to the power supply voltage is converted based on the electrical signal. and a source terminal from which is output.
  • a MOSFET has a drain electrode electrically connected to a drain terminal and a source electrode electrically connected to a source terminal.
  • the drain electrode is bonded to a die pad connected to the drain terminal by a first conductive bonding material.
  • the source electrode is bonded to the metal clip by a second conductive bonding material. Additionally, the metal clip is also bonded to the source terminal. Both the first conductive bonding material and the second conductive bonding material are solder. This allows a larger current to flow through the semiconductor device.
  • An object of the present disclosure is to provide a semiconductor device that is improved over conventional ones.
  • an object of the present disclosure is to provide a semiconductor device that can reduce switching loss of a semiconductor element.
  • a semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having a first electrode and a gate electrode, a first terminal electrically connected to the first electrode, and a second terminal electrically connected to the gate electrode. and a third terminal electrically connected to the first electrode.
  • the direction of the current flowing through each of the first terminal and the third terminal is opposite to the direction of the current flowing through the second terminal.
  • the second terminal is located next to the first terminal.
  • the third terminal is located on the opposite side of the first terminal with respect to the second terminal.
  • FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view of the semiconductor device shown in FIG. 1.
  • FIG. 3 is a plan view corresponding to FIG. 2, in which the sealing resin is seen through.
  • FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1.
  • FIG. 5 is a front view of the semiconductor device shown in FIG. 1.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3.
  • FIG. 9 is a partially enlarged view of FIG. 6.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a sectional view taken along line VII-VII in FIG. 3.
  • FIG. 8 is a cross-sectional view taken along line VIII-VIII
  • FIG. 10 is a plan view illustrating the effects of the semiconductor device shown in FIG. 1, and corresponds to FIG. 3.
  • FIG. 11 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, through which the sealing resin is seen.
  • FIG. 12 is a bottom view of the semiconductor device shown in FIG. 11.
  • FIG. 13 is a front view of the semiconductor device shown in FIG. 11.
  • FIG. 14 is a rear view of the semiconductor device shown in FIG. 11.
  • FIG. 15 is a right side view of the semiconductor device shown in FIG. 11.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 11.
  • FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 11.
  • FIG. 11 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, through which the sealing resin is seen.
  • FIG. 12 is a bottom view of the semiconductor device shown in FIG. 11.
  • FIG. 13 is a
  • FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 11.
  • FIG. 19 is a partially enlarged view of FIG. 16.
  • FIG. 20 is a plan view illustrating the function and effect of the semiconductor device shown in FIG. 11, and corresponds to FIG.
  • a semiconductor device A10 according to a first embodiment of the present disclosure will be described based on FIGS. 1 to 10.
  • the semiconductor device A10 is used in a power conversion circuit such as an inverter.
  • the package format of the semiconductor device A10 is TO (Transistor Outline).
  • the semiconductor device A10 includes a semiconductor element 10, a die pad 20, a first terminal 21, a second terminal 22, a third terminal 23, a fourth terminal 24, a conductive bonding layer 29, a first conductive member 31, a second conductive member 32, and a third conductive member 32.
  • 3 conductive member 33 and sealing resin 40.
  • the sealing resin 40 is shown.
  • the transparent sealing resin 40 is shown by an imaginary line (two-dot chain line).
  • first direction z the normal direction of the mounting surface 201 of the die pad 20, which will be described later, will be referred to as a "first direction z.”
  • second direction x One direction perpendicular to the first direction z is called a "second direction x.”
  • third direction y A direction perpendicular to both the first direction z and the second direction x is referred to as a "third direction y.”
  • the semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
  • the semiconductor element 10 may be a field effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 10 is an n-channel type MOSFET with a vertical structure.
  • the plurality of semiconductor elements 10 include a compound semiconductor substrate.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC).
  • the semiconductor element 10 has a first electrode 11, a gate electrode 12, and a second electrode 13.
  • the first electrode 11 is located on one side of the semiconductor element 10 in the first direction z. A current corresponding to the power converted by the semiconductor element 10 flows through the first electrode 11 . That is, the first electrode 11 corresponds to the source electrode of the semiconductor element 10.
  • the first electrode 11 includes a first part 111 and two second parts 112.
  • the two second parts 112 are located on one side of the first part 111 in the second direction x.
  • the two second parts 112 are separated from each other in the third direction y.
  • the area of each of the two second parts 112 is smaller than the area of the first part 111 when viewed in the first direction z.
  • the second electrode 13 is located on the opposite side from the first electrode 11 in the first direction z. A current corresponding to the power before being converted by the semiconductor element 10 flows through the second electrode 13 . That is, the second electrode 13 corresponds to the drain electrode of the semiconductor element 10.
  • the gate electrode 12 is located on the same side as the first electrode 11 in the first direction z.
  • the gate electrode 12 is located between the two second parts 112 of the first electrode 11 in the third direction y.
  • a gate voltage for driving the semiconductor element 10 is applied to the gate electrode 12 .
  • the area of the gate electrode 12 is smaller than the area of the first portion 111 of the first electrode 11 when viewed in the first direction z.
  • the die pad 20 is a conductive member on which the semiconductor element 10 is mounted, as shown in FIG. 3 and FIGS. 6 to 8.
  • the die pad 20, together with the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24, are constructed from the same lead frame.
  • the lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the die pad 20, the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 includes copper.
  • the die pad 20 has a mounting surface 201, a back surface 202, and a through hole 203.
  • the mounting surface 201 faces in the first direction z.
  • the mounting surface 201 faces the second electrode 13 of the semiconductor element 10.
  • the back surface 202 faces the opposite side from the mounting surface 201 in the first direction z.
  • the back surface 202 is plated with tin (Sn), for example.
  • the through hole 203 extends through the die pad 20 from the mounting surface 201 to the back surface 202 in the first direction z.
  • the through hole 203 has a circular shape when viewed in the first direction z.
  • the conductive bonding layer 29 bonds the die pad 20 and the semiconductor element 10, as shown in FIGS. 6 and 7.
  • the conductive bonding layer 29 conductively bonds the mounting surface 201 of the die pad 20 and the second electrode 13 of the semiconductor element 10. Thereby, the second electrode 13 is electrically connected to the die pad 20.
  • the conductive bonding layer 29 is, for example, solder.
  • the conductive bonding layer 29 may be made of sintered metal.
  • the first terminal 21 is located away from the die pad 20, as shown in FIGS. 3 and 6.
  • the first terminal 21 extends in the third direction y.
  • the first terminal 21 is electrically connected to the first portion 111 of the first electrode 11 of the semiconductor element 10 . Therefore, the first terminal 21 corresponds to the source terminal of the semiconductor device A10.
  • the first terminal 21 has a covering portion 211, an exposed portion 212, and a first bonding surface 213.
  • the covering portion 211 is covered with a sealing resin 40.
  • the exposed portion 212 is connected to the covering portion 211 and exposed from the sealing resin 40 .
  • the exposed portion 212 extends away from the die pad 20 in the third direction y.
  • the surface of the exposed portion 212 is plated with tin, for example.
  • the first bonding surface 213 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z.
  • the first bonding surface 213 is included in a part of the covering portion 211.
  • the first bonding surface 213 is located on the side where the semiconductor element 10 is located with respect to the mounting surface 201 in the first direction z.
  • the second terminal 22 is located away from the die pad 20, as shown in FIGS. 3 and 7.
  • the second terminal 22 extends in the third direction y.
  • the second terminal 22 is located next to the first terminal 21.
  • the second terminal 22 is electrically connected to the gate electrode 12 of the semiconductor element 10 . Therefore, the second terminal 22 corresponds to the gate terminal of the semiconductor device A10.
  • the direction of the current flowing through the second terminal 22 is opposite to the direction of the current flowing through the first terminal 21.
  • the second terminal 22 has a covering portion 221, an exposed portion 222, and a second bonding surface 223.
  • the covering portion 221 is covered with a sealing resin 40.
  • the exposed portion 222 is connected to the covering portion 221 and exposed from the sealing resin 40 .
  • the exposed portion 222 extends away from the die pad 20 in the third direction y.
  • the surface of the exposed portion 222 is plated with tin.
  • the second bonding surface 223 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z.
  • the second bonding surface 223 is included in a part of the covering portion 221. In the first direction z, the position of the second joint surface 223 is the same as the position of the first joint surface 213 of the first terminal 21 .
  • the third terminal 23 is located away from the die pad 20, as shown in FIG.
  • the second terminal 22 and the third terminal 23 extend in the third direction y.
  • the third terminal 23 is located on the opposite side of the first terminal 21 with respect to the second terminal 22.
  • the third terminal 23 is located next to the second terminal 22.
  • the third terminal 23 is electrically connected to either of the two second portions 112 of the first electrode 11 of the semiconductor element 10 . Therefore, a voltage having the same potential as the voltage applied to the first terminal 21 is applied to the third terminal 23 .
  • the direction of the current flowing through the third terminal 23 is the same as the direction of the current flowing through the first terminal 21.
  • the third terminal 23 has a covering portion 231, an exposed portion 232, and a third bonding surface 233.
  • the covering portion 231 is covered with a sealing resin 40.
  • the exposed portion 232 is connected to the covering portion 231 and exposed from the sealing resin 40 .
  • the exposed portion 232 extends away from the die pad 20 in the third direction y.
  • the surface of the exposed portion 232 is plated with tin.
  • the third bonding surface 233 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z.
  • the third joint surface 233 is included in a part of the covering portion 231. In the first direction z, the position of the third joint surface 233 is the same as the position of the first joint surface 213 of the first terminal 21 .
  • the fourth terminal 24 is located on the opposite side of the second terminal 22 with respect to the first terminal 21 in the second direction x.
  • the fourth terminal 24 includes a portion extending in the third direction y, and is connected to the die pad 20. Thereby, the fourth terminal 24 is electrically connected to the second electrode 13 of the semiconductor element 10. Therefore, the fourth terminal 24 corresponds to the drain terminal of the semiconductor device A10.
  • the direction of the current flowing through the fourth terminal 24 is opposite to the direction of the current flowing through the first terminal 21.
  • the fourth terminal 24 has a covering portion 241 and an exposed portion 242.
  • the covering portion 241 is connected to the die pad 20 and covered with the sealing resin 40 .
  • the covering portion 241 is bent when viewed in the second direction x.
  • the exposed portion 242 is connected to the covering portion 241 and exposed from the sealing resin 40 .
  • the exposed portion 242 extends away from the die pad 20 in the third direction y.
  • the surface of the exposed portion 242 is plated with tin.
  • the first terminal 21, second terminal 22, third terminal 23, and fourth terminal 24 are arranged along the second direction x.
  • the minimum distance d1 between the portions of the first terminal 21 and the fourth terminal 24 exposed from the sealing resin 40 (the exposed portion 212 and the exposed portion 242) is It is larger than the minimum interval d2 between the portions of the second terminals 22 exposed from the sealing resin 40 (the exposed portions 212 and the exposed portions 222).
  • the height h of the portion of each of the first terminal 21, second terminal 22, third terminal 23, and fourth terminal 24 exposed from the sealing resin 40 is as follows: Both are equal.
  • the first conductive member 31 is electrically conductively bonded to the first portion 111 of the first electrode 11 of the semiconductor element 10 and the first bonding surface 213 of the first terminal 21, as shown in FIGS. 3 and 6. Thereby, the first terminal 21 is electrically connected to the first portion 111 of the first electrode 11 .
  • the first conductive member 31 is a plurality of wires containing aluminum (Al).
  • the first conductive member 31 may be a plurality of wires containing copper or a metal clip containing copper.
  • the second conductive member 32 is electrically bonded to the gate electrode 12 of the semiconductor element 10 and the second bonding surface 223 of the second terminal 22, as shown in FIGS. 3 and 7. Thereby, the second terminal 22 is electrically connected to the gate electrode 12.
  • the second conductive member 32 is, for example, a wire containing either aluminum or gold (Au).
  • the third conductive member 33 is conductively bonded to one of the two second parts 112 of the first electrode 11 of the semiconductor element 10 and the third bonding surface 233 of the third terminal 23. . Thereby, the third terminal 23 is electrically connected to either of the two second portions 112 of the first electrode 11 .
  • the third conductive member 33 is, for example, a wire containing either aluminum or gold.
  • the second conductive member 32 is located next to the first conductive member 31. Further, the second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33. As shown in FIG. 3, in the semiconductor device A10, the dimension of the first terminal 21 in the third direction y is larger than the conductive path length of the first conductive member 31. Additionally, the dimension of the second terminal 22 in the third direction y is larger than the length of the conductive path of the second conductive member 32.
  • the sealing resin 40 covers the semiconductor element 10, the first conductive member 31, and the second conductive member 32, as shown in FIGS. 3, 6, and 7. As shown in FIGS. 6 to 8, the sealing resin 40 partially covers each of the die pad 20, the first terminal 21, the second terminal 22, and the fourth terminal 24. As shown in FIGS. Further, the sealing resin 40 covers the third conductive member 33 and also partially covers the third terminal 23 .
  • the sealing resin 40 has electrical insulation properties.
  • the sealing resin 40 is made of a material containing, for example, a black epoxy resin.
  • the sealing resin 40 has a top surface 41 , a bottom surface 42 , two first side surfaces 43 , two second side surfaces 44 , two openings 45 , and a mounting hole 46 .
  • the top surface 41 faces the same side as the mounting surface 201 of the die pad 20 in the first direction z.
  • the bottom surface 42 faces opposite to the top surface 41 in the first direction z.
  • the back surface 202 of the die pad 20 is exposed from the bottom surface 42.
  • the two first side surfaces 43 are located apart from each other in the third direction y. Each of the two first side surfaces 43 is connected to the top surface 41 and the bottom surface 42. From one of the two first side surfaces 43, the exposed portion 212 of the first terminal 21, the exposed portion 222 of the second terminal 22, and the exposed portion 232 of the fourth terminal 24 are exposed.
  • the two second side surfaces 44 are located apart from each other in the second direction x.
  • Each of the two second side surfaces 44 is connected to the top surface 41 and the bottom surface 42.
  • the two openings 45 are located apart from each other in the second direction x.
  • Each of the two openings 45 is recessed inward from the sealing resin 40 from both the top surface 41 and one of the two second side surfaces 44 .
  • a portion of the mounting surface 201 of the die pad 20 is exposed from each of the two openings 45.
  • the attachment hole 46 penetrates the sealing resin 40 from the top surface 41 to the bottom surface 42 in the first direction z.
  • the attachment hole 46 is included in the through hole 203 of the die pad 20 when viewed in the first direction z.
  • the peripheral surface of the die pad 20 that defines the through hole 203 is covered with a sealing resin 40 .
  • the maximum dimension of the attachment hole 46 is smaller than the dimension of the through hole 203 when viewed in the first direction z.
  • the semiconductor device A10 includes a semiconductor element 10 having a first electrode 11 and a gate electrode 12, a first terminal 21 electrically connected to the first electrode 11, a second terminal 22 electrically connected to the gate electrode 12, and a semiconductor element 10 having a first electrode 11 and a gate electrode 12.
  • the third terminal 23 is electrically connected. The direction of the current flowing through each of the first terminal 21 and the third terminal 23 is opposite to the direction of the current flowing through the second terminal 22.
  • the second terminal 22 is located next to the first terminal 21.
  • the third terminal 23 is located on the opposite side of the first terminal 21 with respect to the second terminal 22.
  • an output current I d flows through the first terminal 21 as the first electrode 11 is driven.
  • the output current I d is a so-called unsteady current whose magnitude changes over time. Therefore, a magnetic flux M is formed around the first terminal 21. Therefore, by adopting this configuration, an induced electromotive force V M acts on the second terminal 22 due to electromagnetic induction caused by the magnetic flux M.
  • the direction of the induced electromotive force V M is equal to the direction of the current flowing through the second terminal 22. Therefore, the current flowing to the second terminal 22 is accelerated by the induced electromotive force V M .
  • the semiconductor device A10 further includes a first conductive member 31, a second conductive member 32, and a third conductive member 33 covered with a sealing resin 40.
  • the second conductive member 32 is located next to the first conductive member 31.
  • the induced electromotive force V M also acts on the second conductive member 32 due to the output current I d flowing through the first conductive member 31 (see FIG. 10). This further accelerates the current flowing through the second terminal 22, making it possible to effectively reduce the switching loss of the semiconductor element 10.
  • the second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33.
  • the third conductive member 33 is located further away from the first conductive member 31 than the second conductive member 32. Thereby, inhibition of the current in the second conductive member 32 due to mutual induction between the first conductive member 31 and the third conductive member 33 can be suppressed.
  • the dimension of the first terminal 21 in the third direction y is larger than the conductive path length of the first conductive member 31. Furthermore, the dimension of the second terminal 22 in the third direction y is larger than the length of the conductive path of the second conductive member 32. Therefore, in the semiconductor device A10, the effect of the induced electromotive force V M shown in FIG. . Therefore, in the semiconductor device A10, it is preferable to further reduce the distance between the first terminal 21 and the second terminal 22.
  • the semiconductor element 10 has a second electrode 13 located on the opposite side to the first electrode 11 in the first direction z.
  • the semiconductor device A10 further includes a fourth terminal 24 electrically connected to the second electrode 13.
  • the fourth terminal 24 is located on the opposite side of the second terminal 22 with respect to the first terminal 21 in the second direction x. As shown in FIG. 3, the distance d1 between the first terminal 21 and the fourth terminal 24 is larger than the distance d2 between the first terminal 21 and the second terminal 22.
  • the semiconductor device A10 further includes a die pad 20 to which the second electrode 13 of the semiconductor element 10 is conductively bonded.
  • the fourth terminal 24 is connected to the die pad 20.
  • the die pad 20 can have both heat dissipation and conduction functions. In this case, by exposing the die pad 20 from the sealing resin 40, the heat dissipation of the semiconductor device A10 can be improved.
  • FIGS. 11 to 20 A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on FIGS. 11 to 20.
  • the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanation will be omitted.
  • the sealing resin 40 is shown.
  • the transparent sealing resin 40 is shown with imaginary lines.
  • the semiconductor device A20 differs from the semiconductor device A10 in that it does not include the die pad 20 and in the configurations of the semiconductor element 10, the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24.
  • the package format of the semiconductor device A20 is QFN (Quad Flat Non-leaded).
  • the first electrode 11 of the semiconductor element 10 does not include a first part 111 separated from each other and two second parts 112, and is single.
  • Each of the first conductive member 31 and the third conductive member 33 is electrically connected to the first electrode 11 .
  • FIG. 11 As shown in FIG. 11, FIG. 12, FIG. 13, and FIG. It has a hanging part 218.
  • the two mounting surfaces 214 face opposite to the first bonding surface 213 in the first direction z. As shown in FIG. 12, the mounting surfaces 214 are separated from each other in the second direction x. The two mounting surfaces 214 are exposed from the bottom surface 42 of the sealing resin 40. As shown in FIGS. 13 and 16, the two side surfaces 215 are individually connected to the two mounting surfaces 214 and face the third direction y. The two side surfaces 215 are also connected to the first joint surface 213. The two side surfaces 215 are exposed from either of the two first side surfaces 43 of the sealing resin 40.
  • the two inner circumferential surfaces 216 are individually connected to the two mounting surfaces 214 and face in a direction perpendicular to the first direction z.
  • Inner peripheral surface 216 is covered with sealing resin 40.
  • the eaves portion 217 protrudes from the two inner peripheral surfaces 216 in a direction perpendicular to the first direction z.
  • the first joint surface 213 is included in a part of the eaves section 217.
  • the eaves portion 217 is covered with a sealing resin 40.
  • the hanging portion 218 protrudes outward from the sealing resin 40 from the eaves portion 217 in the second direction x.
  • the first joint surface 213 is included in a part of the hanging portion 218. As shown in FIG. 15, the hanging portion 218 has an end surface 218A facing in the second direction x. The end surface 218A is exposed from either of the two second side surfaces 44 of the sealing resin 40.
  • the second terminal 22 has a second bonding surface 223, a mounting surface 224, a side surface 225, an inner peripheral surface 226, and an eaves portion 227.
  • the mounting surface 224 faces the opposite side from the second bonding surface 223 in the first direction z. As shown in FIG. 12, the mounting surface 224 is exposed from the bottom surface 42 of the sealing resin 40. As shown in FIGS. 13 and 17, the side surface 225 is connected to the second bonding surface 223 and the mounting surface 224, and faces in the third direction y. The side surface 225 is exposed from the first side surface 43 of the two first side surfaces 43 of the sealing resin 40 where the side surface 215 of the first terminal 21 is exposed.
  • the inner peripheral surface 226 is connected to the mounting surface 224 and faces in a direction perpendicular to the first direction z. Inner peripheral surface 226 is covered with sealing resin 40. As shown in FIGS. 11, 12, 13, and 17, the eaves portion 227 protrudes from the inner peripheral surface 226 in a direction perpendicular to the first direction z. The second joint surface 223 is included in a part of the eaves section 227. The eaves portion 227 is covered with a sealing resin 40.
  • the third terminal 23 has a third bonding surface 233, a mounting surface 234, a side surface 235, an inner peripheral surface 236, an eaves portion 237, and a hanging portion 238.
  • the mounting surface 234 faces the opposite side from the third bonding surface 233 in the first direction z. As shown in FIG. 12, the mounting surface 234 is exposed from the bottom surface 42 of the sealing resin 40. As shown in FIG. 13, the side surface 235 is connected to the third bonding surface 233 and the mounting surface 234, and faces in the third direction y. The side surface 235 is exposed from the first side surface 43 of the two first side surfaces 43 of the sealing resin 40 where the side surface 215 of the first terminal 21 is exposed.
  • the inner peripheral surface 236 is connected to the mounting surface 234 and faces in a direction perpendicular to the first direction z.
  • Inner peripheral surface 236 is covered with sealing resin 40.
  • the eaves portion 237 protrudes from the inner peripheral surface 236 in a direction perpendicular to the first direction z.
  • the third joint surface 233 is included in a part of the eaves section 237.
  • the eaves portion 237 is covered with a sealing resin 40.
  • the hanging portion 238 protrudes outward from the sealing resin 40 from the eaves portion 237 in the second direction x.
  • the third joint surface 233 is included in a part of the hanging portion 238.
  • the hanging portion 218 has an end surface 218A facing in the second direction x.
  • the end surface 218A is exposed from the second side surface 44 of the two second side surfaces 44 of the sealing resin 40 from which the end surface 218A of the hanging portion 218 of the first terminal 21 is not exposed.
  • the fourth terminal 24 is separated from the first terminal 21, second terminal 22, and third terminal 23 in the third direction y.
  • the fourth terminal 24 includes a mounting surface 243, a mounting surface 244, a plurality of side surfaces 245, an inner peripheral surface 246, an eaves portion 247, and two It has a hanging part 248.
  • the mounting surface 243 and the mounting surface 244 face oppositely to each other in the first direction z.
  • the mounting surface 243 faces the semiconductor element 10.
  • the second electrode 13 of the semiconductor element 10 is electrically bonded to the mounting surface 243 via the electrically conductive bonding layer 29 . Thereby, the second electrode 13 of the semiconductor element 10 is electrically connected to the fourth terminal 24.
  • the mounting surface 234 is exposed from the bottom surface 42 of the sealing resin 40.
  • the area of the mounting surface 234 is larger than the area of each of the two mounting surfaces 214 of the first terminal 21 , the mounting surface 224 of the second terminal 22 , and the mounting surface 234 of the third terminal 23 .
  • the semiconductor element 10 overlaps the mounting surface 234 when viewed in the first direction z.
  • the plurality of side surfaces 235 are connected to the mounting surface 243 and the mounting surface 244, and face the third direction y.
  • the plurality of side surfaces 235 are exposed from the first side surface 43 of the two first side surfaces 43 of the sealing resin 40 from which the two side surfaces 215 of the first terminal 21 are not exposed.
  • the plurality of side surfaces 235 are arranged along the second direction x.
  • the inner peripheral surface 246 is connected to the mounting surface 244 and faces in a direction perpendicular to the first direction z. Inner peripheral surface 246 is covered with sealing resin 40.
  • the semiconductor element 10 is surrounded by an inner circumferential surface 236 and a plurality of side surfaces 235 when viewed in the first direction z.
  • the eaves portion 237 protrudes from the inner peripheral surface 236 in a direction perpendicular to the first direction z.
  • the mounting surface 243 is included in a part of the eaves section 237.
  • the eaves portion 237 is covered with a sealing resin 40. As shown in FIGS.
  • the two hanging parts 248 protrude outward from the sealing resin 40 from the eaves part 217 in the second direction x.
  • the two hanging parts 248 are located on opposite sides of the eaves part 237 in the second direction x.
  • the mounting surface 243 is included in a part of each of the two hanging parts 218.
  • Each of the two hanging portions 248 has an end surface 248A facing in the second direction x. End surfaces 248A of each of the two hanging portions 248 are individually exposed from the two second side surfaces 44 of the sealing resin 40.
  • the first conductive member 31 is a metal clip. One end of the first conductive member 31 is electrically bonded to the first electrode 11 of the semiconductor element 10 via the electrically conductive bonding layer 29 . The other end of the first conductive member 31 is electrically bonded to the first bonding surface 213 of the first terminal 21 via the electrically conductive bonding layer 29 .
  • the second conductive member 32 is located next to the first conductive member 31 in the semiconductor device A20 as well. Further, the second conductive member 32 includes a section located between the first conductive member 31 and the third conductive member 33. As shown in FIG. 11, in the semiconductor device A20, the dimension of the first terminal 21 in the third direction y is smaller than the conductive path length of the first conductive member 31. Additionally, the dimension of the second terminal 22 in the third direction y is smaller than the length of the conductive path of the second conductive member 32.
  • the semiconductor device A20 includes a semiconductor element 10 having a first electrode 11 and a gate electrode 12, a first terminal 21 electrically connected to the first electrode 11, a second terminal 22 electrically connected to the gate electrode 12, and a semiconductor element 10 having a first electrode 11 and a gate electrode 12.
  • the third terminal 23 is electrically connected. The direction of the current flowing through each of the first terminal 21 and the third terminal 23 is opposite to the direction of the current flowing through the second terminal 22.
  • the second terminal 22 is located next to the first terminal 21.
  • the third terminal 23 is located on the opposite side of the first terminal 21 with respect to the second terminal 22.
  • the direction of the induced electromotive force V M is equal to the direction of the current flowing through the second terminal 22. Therefore, the current flowing to the second terminal 22 is accelerated by the induced electromotive force V M . Therefore, according to this configuration, it is possible to reduce the switching loss of the semiconductor element 10 also in the semiconductor device A20. Further, the semiconductor device A20 has the same configuration as the semiconductor element 10, so that the same effects as the semiconductor element 10 can be achieved.
  • the dimension of the first terminal 21 in the third direction y is smaller than the conductive path length of the first conductive member 31. Furthermore, the dimension of the second terminal 22 in the third direction y is smaller than the length of the conductive path of the second conductive member 32. Therefore, in the semiconductor device A20, the effect of the induced electromotive force V M shown in FIG. . Therefore, in the semiconductor device A20, it is preferable to make the distance between the first conductive member 31 and the second conductive member 32 smaller.
  • the second electrode 13 of the semiconductor element 10 is conductively bonded to the fourth terminal 24.
  • the sealing resin 40 has a bottom surface 42 facing in the first direction z.
  • the first terminal 21 , the second terminal 22 , the third terminal 23 , and the fourth terminal 24 are exposed from the bottom surface 42 .
  • the sealing resin 40 has two first side surfaces 43 facing oppositely to each other in the third direction y.
  • the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are exposed from either of the two first side surfaces 43.
  • a semiconductor element having a first electrode and a gate electrode; a first terminal electrically connected to the first electrode; a second terminal electrically connected to the gate electrode; a third terminal electrically connected to the first electrode; The direction of the current flowing through each of the first terminal and the third terminal is opposite to the direction of the current flowing through the second terminal, The second terminal is located next to the first terminal, In the semiconductor device, the third terminal is located on the opposite side of the first terminal with respect to the second terminal. Appendix 2.
  • the semiconductor element has a second electrode located on the opposite side of the first electrode in the first direction, The gate electrode is located on the same side as the first electrode in the first direction,
  • the semiconductor device according to supplementary note 1 further comprising a fourth terminal electrically connected to the second electrode.
  • Appendix 3. The first terminal, the second terminal, and the third terminal are arranged along a second direction orthogonal to the first direction, The semiconductor device according to appendix 2, wherein the third terminal is located next to the second terminal.
  • Appendix 4. further comprising a sealing resin that covers the semiconductor element, The semiconductor device according to appendix 3, wherein the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from the sealing resin.
  • the minimum interval between the parts of each of the first terminal and the fourth terminal exposed from the sealing resin is smaller than the minimum interval between the parts of each of the first terminal and the second terminal exposed from the sealing resin.
  • Appendix 11. Also equipped with a die pad, the second electrode is electrically conductively bonded to the die pad; The semiconductor device according to appendix 9 or 10, wherein the fourth terminal is connected to the die pad.
  • Appendix 12 The semiconductor device according to appendix 11, wherein the die pad is exposed from the sealing resin.
  • Appendix 14. the fourth terminal is separated from the first terminal in the third direction, The semiconductor device according to attachment 13, wherein the second electrode is conductively bonded to the fourth terminal.
  • the sealing resin has a bottom surface facing the first direction, The semiconductor device according to appendix 14, wherein the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from the bottom surface.
  • the sealing resin has two first side surfaces facing opposite to each other in the third direction, The semiconductor device according to appendix 15, wherein the first terminal, the second terminal, the third terminal, and the fourth terminal are exposed from either of the two first side surfaces.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs qui comporte un élément semi-conducteur qui a une première électrode et une électrode de grille. Ce dispositif à semi-conducteurs comprend en outre : une première borne qui est électriquement connectée à la première électrode ; une deuxième borne qui est électriquement connectée à l'électrode de grille ; et une troisième borne qui est électriquement connectée à la première électrode. La direction du courant électrique circulant à travers la première borne et la troisième borne est opposée à la direction du courant électrique circulant à travers la deuxième borne. La deuxième borne est positionnée adjacente à la première borne. La troisième borne est positionnée à l'opposé de la première borne par rapport à la deuxième borne.
PCT/JP2023/026762 2022-08-10 2023-07-21 Dispositif à semi-conducteurs WO2024034359A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-127924 2022-08-10
JP2022127924 2022-08-10

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WO2024034359A1 true WO2024034359A1 (fr) 2024-02-15

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012146998A (ja) * 2012-03-12 2012-08-02 Renesas Electronics Corp 半導体装置
WO2014050278A1 (fr) * 2012-09-26 2014-04-03 日立オートモティブシステムズ株式会社 Module à semi-conducteurs de puissance
JP2017147433A (ja) * 2015-12-16 2017-08-24 ローム株式会社 半導体装置
WO2018043535A1 (fr) * 2016-09-02 2018-03-08 ローム株式会社 Module de puissance, module de puissance avec circuit de commande, équipement industriel, automobile électrique et voiture hybride
JP2020188177A (ja) * 2019-05-16 2020-11-19 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012146998A (ja) * 2012-03-12 2012-08-02 Renesas Electronics Corp 半導体装置
WO2014050278A1 (fr) * 2012-09-26 2014-04-03 日立オートモティブシステムズ株式会社 Module à semi-conducteurs de puissance
JP2017147433A (ja) * 2015-12-16 2017-08-24 ローム株式会社 半導体装置
WO2018043535A1 (fr) * 2016-09-02 2018-03-08 ローム株式会社 Module de puissance, module de puissance avec circuit de commande, équipement industriel, automobile électrique et voiture hybride
JP2020188177A (ja) * 2019-05-16 2020-11-19 ローム株式会社 半導体装置

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