WO2023063025A1 - Dispositif à semi-conducteurs - Google Patents

Dispositif à semi-conducteurs Download PDF

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Publication number
WO2023063025A1
WO2023063025A1 PCT/JP2022/034711 JP2022034711W WO2023063025A1 WO 2023063025 A1 WO2023063025 A1 WO 2023063025A1 JP 2022034711 W JP2022034711 W JP 2022034711W WO 2023063025 A1 WO2023063025 A1 WO 2023063025A1
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WIPO (PCT)
Prior art keywords
thickness direction
semiconductor device
sealing resin
mounting
viewed
Prior art date
Application number
PCT/JP2022/034711
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English (en)
Japanese (ja)
Inventor
明寛 木村
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to CN202280069095.5A priority Critical patent/CN118103973A/zh
Publication of WO2023063025A1 publication Critical patent/WO2023063025A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • the present disclosure relates to semiconductor devices.
  • Patent Document 1 discloses an example of a semiconductor device.
  • the semiconductor device includes leads, a semiconductor element joined to the leads, and a sealing resin covering a part of the leads and the semiconductor element.
  • the sealing resin of the semiconductor device disclosed in Patent Document 1 is formed with two grooves that are spaced apart in a direction perpendicular to the thickness direction.
  • the two grooves penetrate the sealing resin in the thickness direction.
  • a bolt for attaching the semiconductor device to the heat sink is inserted through the two grooves.
  • a relatively large compressive force acts around the two grooves.
  • shear stress is generated at the interface between the lead and the sealing resin.
  • the shear stress is particularly concentrated at the interface including the thickness direction in the in-plane direction. Therefore, there is a risk that the leads will peel off from the sealing resin, and countermeasures are desired.
  • one object of the present disclosure is to provide a semiconductor device capable of suppressing peeling of leads from the sealing resin.
  • a semiconductor device provided by the present disclosure includes a lead having a mounting surface facing the thickness direction and an end surface facing the direction perpendicular to the thickness direction and connected to the mounting surface; and a sealing resin that covers the semiconductor element and is in contact with the mounting surface and the end surface.
  • a first portion is formed on the end surface, and the first portion includes at least one of a bulging portion protruding from the end surface and a recessed portion recessed from the end surface. When viewed in the thickness direction, the bulging portion is located outside the peripheral edge of the mounting surface. When viewed in the thickness direction, the recessed portion is surrounded by the peripheral edge.
  • the semiconductor device According to the semiconductor device according to the present disclosure, it is possible to suppress peeling of the leads from the sealing resin.
  • FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure
  • FIG. 2 is a plan view of the semiconductor device shown in FIG. 1.
  • FIG. 3 is a plan view corresponding to FIG. 2 and seen through the sealing resin.
  • 4 is a bottom view of the semiconductor device shown in FIG. 1.
  • FIG. 5 is a front view of the semiconductor device shown in FIG. 1.
  • FIG. 6 is a right side view of the semiconductor device shown in FIG. 1.
  • FIG. FIG. 7 is a cross-sectional view along line VII-VII of FIG.
  • FIG. 10 is a partially enlarged view of the first lead shown in FIG. 3.
  • FIG. 10 is a partially enlarged view of the first lead shown in FIG. 3.
  • FIG. 11 is a partially enlarged view of FIG. 10.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11.
  • FIG. 13 is a partially enlarged view of a plurality of second leads shown in FIG. 3;
  • FIG. 14 is a partially enlarged plan view of a semiconductor device according to a first modification of the first embodiment of the present disclosure, corresponding to FIG. 11.
  • FIG. 15 is a cross-sectional view along line XV-XV of FIG. 14.
  • FIG. 16 is a partially enlarged plan view of a semiconductor device according to a second modification of the first embodiment of the present disclosure, corresponding to FIG. 11.
  • FIG. 17 is a cross-sectional view along line XVII-XVII of FIG. 16.
  • FIG. 18 is a partially enlarged plan view of the first lead of the semiconductor device according to the second embodiment of the present disclosure, seen through the sealing resin.
  • 19 is a partially enlarged view of FIG. 18.
  • FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19.
  • FIG. 21 is a partially enlarged plan view of a plurality of second leads of the semiconductor device shown in FIG. 18, which is seen through the sealing resin.
  • FIG. 22 is a plan view of the semiconductor device according to the third embodiment of the present disclosure, which is transparent through the sealing resin.
  • FIG. 1 A semiconductor device A10 according to the first embodiment of the present disclosure will be described based on FIGS. 1 to 13.
  • FIG. The semiconductor device A10 includes a substrate 11, a bonding layer 12, a plurality of leads 20, a plurality of ground terminals 23, a plurality of semiconductor elements 31, a plurality of protection elements 32, a conductive bonding layer 39, a plurality of first wires 41, a plurality of second 2 wires 42 and a sealing resin 50 are provided.
  • the semiconductor device A10 includes a plurality of control terminals 24, a plurality of ICs 33, a plurality of diodes 34, a plurality of third wires 43, a plurality of fourth wires 44, a plurality of fifth wires 45, a plurality of sixth wires 46, a plurality of and a dummy terminal 60 .
  • FIG. 3 is transparent through the sealing resin 50 for convenience of understanding.
  • the permeated sealing resin 50 is indicated by an imaginary line (chain double-dashed line).
  • the VII-VII line and the VIII-VIII line are indicated by one-dot chain lines.
  • the thickness direction of the substrate 11 is called "thickness direction z" for convenience.
  • a direction perpendicular to the thickness direction z is called a “first direction x”.
  • a direction orthogonal to both the thickness direction z and the first direction x is called a "second direction y”.
  • the semiconductor device A 10 converts DC power input to the first lead 20A (details will be described later) of the plurality of leads 20 and the plurality of ground terminals 23 into AC power by the plurality of semiconductor elements 31 .
  • the converted AC power is output as three phases (U-phase, V-phase, W-phase) having different phases from a plurality of second leads 20B (details will be described later) of the plurality of leads 20 .
  • the plurality of ICs 33 drive the plurality of semiconductor elements 31.
  • FIG. Therefore, the semiconductor device A10 is an IPM (Intelligent Power Module).
  • the semiconductor device A10 is used, for example, in a power supply circuit for driving a three-phase AC motor.
  • Substrate 11 supports a plurality of leads 20, as shown in FIGS.
  • the substrate 11 has electrical insulation.
  • Substrate 11 is made of ceramics containing alumina (Al 2 O 3 ), for example.
  • the material of the substrate 11 is preferably a material with relatively high thermal conductivity.
  • substrate 11 has main surface 111 and back surface 112 .
  • the main surface 111 faces the thickness direction z.
  • the back surface 112 faces the side opposite to the main surface 111 in the thickness direction z.
  • the substrate 11 is covered with the sealing resin 50 except for the back surface 112.
  • FIG. 4 the sealing resin 50 except for the back surface 112.
  • the main surface 111 has a first side 111A and a pair of second sides 111B.
  • the first side 111A and the pair of second sides 111B are part of the peripheral edge of the principal surface 111 .
  • the first side 111A extends in the first direction x.
  • the pair of second sides 111B extend in the second direction y and are positioned apart from each other in the first direction x.
  • the pair of second sides 111B are connected to both ends of the first side 111A.
  • the length L1 of the first side 111A is longer than the length L2 of each of the pair of second sides 111B. Therefore, the substrate 11 is elongated along the first direction x.
  • the plurality of leads 20 are configured from the same lead frame together with the plurality of ground terminals 23, the plurality of control terminals 24, and the dummy terminal 60.
  • the lead frame is made of a material containing copper (Cu) or a copper alloy. Therefore, the compositions of the plurality of leads 20, the plurality of ground terminals 23, the plurality of control terminals 24, and the dummy terminal 60 contain copper. That is, these members contain copper.
  • the multiple leads 20 include a first lead 20A and multiple second leads 20B.
  • the multiple leads 20 have a die pad portion 21 and a terminal portion 22 .
  • the die pad portion 21 is bonded to the main surface 111 of the substrate 11. As shown in FIG. The die pad section 21 is covered with a sealing resin 50 .
  • the die pad portion 21 of the plurality of leads 20 includes a first pad portion 21A and a plurality of second pad portions 21B.
  • the first pad portion 21A refers to the die pad portion 21 of the first lead 20A.
  • the multiple second pad portions 21B refer to the die pad portions 21 of the multiple second leads 20B.
  • the plurality of second pad portions 21B are positioned next to the first pad portions 21A in the first direction x.
  • the die pad section 21 has a mounting surface 211, a bonding surface 212 and an end surface 213.
  • the mounting surface 211 faces the same side as the main surface 111 in the thickness direction z.
  • Each of the plurality of semiconductor elements 31 is bonded to either the mounting surface 211 of the first pad portion 21A or the mounting surface 211 of the plurality of second pad portions 21B.
  • the mounting surface 211 has a peripheral edge 211A.
  • the peripheral edge 211A defines the shape of the mounting surface 211.
  • the joint surface 212 faces the side opposite to the mounting surface 211 in the thickness direction z and faces the main surface 111 .
  • the end surface 213 faces a direction perpendicular to the thickness direction z.
  • the end surface 213 is connected to the mounting surface 211 and the joint surface 212 .
  • the terminal section 22 is connected to the die pad section 21. As shown in FIG. As shown in FIGS. 2, 4 and 5, a portion of the terminal portion 22 is exposed from the sealing resin 50. As shown in FIG. When viewed in the thickness direction z, the terminal portion 22 overlaps the first side 111A of the main surface 111 of the substrate 11 .
  • the terminal portion 22 of the first lead 20A corresponds to a P terminal (positive electrode) to which DC power to be converted is input.
  • Three-phase AC power converted by the plurality of semiconductor elements 31 is output from the terminal portions 22 of the plurality of second leads 20B.
  • the bonding layer 12 is interposed between the main surface 111 of the substrate 11 and the bonding surfaces 212 of the die pad portions 21 of the leads 20, as shown in FIGS.
  • the bonding layer 12 bonds the main surface 111 and the die pad portions 21 of the leads 20 .
  • the bonding layer 12 is made of a material that has electrical insulation and contains resin.
  • the resin is, for example, an epoxy resin.
  • the bonding layer 12 may be made of a material containing metal.
  • the bonding layer 12 is solder, for example.
  • the underlayer contains a metal element.
  • the metal element is silver (Ag).
  • An example of the base layer is a baked resinate silver paste applied to the main surface 111 .
  • the end face 213 of the first pad portion 21A of the first lead 20A and the end face 213 of the second pad portion 21B of at least one of the plurality of second leads 20B have a first A portion 25 is formed.
  • the first portion 25 is located away from the peripheral edge 211A of the mounting surface 211 of the die pad portion 21 .
  • the first portion 25 is formed by press working including punching.
  • the first portion 25 includes a bulging portion 25A.
  • the bulging portion 25A protrudes from the end surface 213 .
  • the bulging portion 25A is located outside the peripheral edge 211A of the mounting surface 211 .
  • the bulging portion 25A has a first surface 251, a second surface 252 and a third surface 253.
  • the first surface 251, the second surface 252 and the third surface 253 face the same side as the end surface 213 of the die pad portion 21 on which the bulging portion 25A is formed in the direction orthogonal to the thickness direction z.
  • the first surface 251, the second surface 252 and the third surface 253 are located away from the peripheral edge 211A of the mounting surface 211. As shown in FIG.
  • the second surface 252 is positioned between the mounting surface 211 of the die pad section 21 and the first surface 251 in the thickness direction z.
  • the second surface 252 is located between the peripheral edge 211A of the mounting surface 211 and the first surface 251 when viewed in the thickness direction z.
  • the third surface 253 is located on the opposite side of the second surface 252 with the first surface 251 interposed therebetween in the thickness direction z.
  • the third surface 253 is located between the peripheral edge 211A of the mounting surface 211 and the first surface 251 when viewed in the thickness direction z.
  • Each of second surface 252 and third surface 253 is parallel to first surface 251 . In the semiconductor device A10, the third surface 253 overlaps the second surface 252 when viewed in the thickness direction z.
  • the plurality of ground terminals 23 are positioned apart from the substrate 11 and the plurality of leads 20, as shown in FIG. At least one of the plurality of ground terminals 23 is located on the side opposite to the first pad portion 21A with the plurality of second pad portions 21B interposed therebetween in the first direction x. Further, the plurality of ground terminals 23 are located on the opposite side of the first lead 20A with the plurality of second leads 20B interposed therebetween in the first direction x.
  • the multiple ground terminals 23 are supported by the sealing resin 50 . As shown in FIGS. 2 , 4 and 5 , a portion of each of the plurality of ground terminals 23 is exposed from the sealing resin 50 .
  • the plurality of ground terminals 23 correspond to N terminals (negative electrodes) to which DC power to be converted is input.
  • the plurality of semiconductor elements 31 are bonded to the mounting surface 211 of the die pad portion 21 of the plurality of leads 20, as shown in FIGS.
  • the multiple semiconductor elements 31 include multiple first elements 31A and multiple second elements 31B.
  • the plurality of first elements 31A are joined to the mounting surface 211 of the first pad portion 21A of the die pad portion 21 of the plurality of leads 20 .
  • the plurality of first elements 31A are arranged along the first direction x.
  • the plurality of second elements 31B are individually bonded to the mounting surfaces 211 of the plurality of second pad portions 21B of the die pad portions 21 of the plurality of leads 20 .
  • the plurality of semiconductor elements 31 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In addition, the plurality of semiconductor elements 31 may be switching elements such as IGBTs (Insulated Gate Bipolar Transistors) or diodes. In the description of the semiconductor device A10, the plurality of semiconductor elements 31 are n-channel MOSFETs with a vertical structure.
  • the plurality of semiconductor elements 31 includes compound semiconductor substrates.
  • the composition of the compound semiconductor substrate includes silicon carbide (SiC). As shown in FIG. 9 , the plurality of semiconductor elements 31 have first electrodes 311 , second electrodes 312 and gate electrodes 313 .
  • the first electrode 311 faces the mounting surface 211 of the die pad portion 21 of one of the leads 20 .
  • a current corresponding to power before being converted by the semiconductor element 31 flows through the first electrode 311 . That is, the first electrode 311 corresponds to the drain electrode of the semiconductor element 31 .
  • the second electrode 312 is located on the opposite side of the first electrode 311 in the thickness direction z. A current corresponding to the power converted by the semiconductor element 31 flows through the second electrode 312 . That is, the second electrode 312 corresponds to the source electrode of the semiconductor element 31 .
  • the second electrode 312 includes multiple metal plating layers.
  • the second electrode 312 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer.
  • Au gold
  • the second electrode 312 includes a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer, good.
  • the gate electrode 313 is provided on the same side as the second electrode 312 in the thickness direction z and is located apart from the second electrode 312 .
  • a gate voltage for driving the semiconductor element 31 is applied to the gate electrode 313 .
  • the area of the gate electrode 313 is smaller than the area of the second electrode 312 when viewed in the thickness direction z.
  • the conductive bonding layer 39 bonds the die pad portions 21 of the leads 20 and the semiconductor elements 31, as shown in FIG.
  • the first electrodes 311 of the plurality of first elements 31A are electrically connected to the mounting surface 211 of the first pad portion 21A via the conductive bonding layer 39 .
  • the first electrodes 311 of the plurality of second elements 31B are individually conductively connected to the mounting surfaces 211 of the plurality of second elements 31B via the conductive bonding layer 39 .
  • the conductive bonding layer 39 is, for example, solder.
  • the plurality of protective elements 32 are conductively joined to the mounting surface 211 of the die pad portion 21 of the plurality of leads 20, as shown in FIGS.
  • the number of protective elements 32 electrically connected to the die pad portion 21 of each lead 20 is equal to the number of semiconductor elements 31 connected to the die pad portion 21 .
  • the plurality of protection elements 32 are Schottky barrier diodes, for example.
  • the plurality of protection elements 32 are electrically connected to the plurality of semiconductor elements 31 individually. Furthermore, each of the plurality of protection elements 32 is connected in parallel to one of the plurality of semiconductor elements 31 .
  • Each of the plurality of protection elements 32 allows current to flow through the protection element 32 instead of the semiconductor element 31 when a reverse bias is applied to any one of the plurality of semiconductor elements 31 connected in parallel. Therefore, the plurality of protection elements 32 are so-called freewheeling diodes. As shown in FIG. 9 , the plurality of protection elements 32 have upper surface electrodes 321 and lower surface electrodes 322 .
  • the upper electrode 321 is provided on the side facing the mounting surface 211 of the die pad portion 21 of the plurality of leads 20 in the thickness direction z.
  • the upper electrode 321 corresponds to the anode electrode of the protective element 32 .
  • the lower electrode 322 faces the mounting surface 211 of the die pad portion 21 of the leads 20 .
  • the lower surface electrode 322 corresponds to the cathode electrode of the protective element 32 .
  • Each of the lower surface electrodes 322 of the plurality of protection elements 32 is electrically connected to the mounting surface 211 of the die pad portion 21 of one of the plurality of leads 20 via the conductive bonding layer 39 . Thereby, each of the lower surface electrodes 322 of the plurality of protection elements 32 is electrically connected to the first electrode 311 of one of the plurality of semiconductor elements 31 .
  • those electrically connected to the mounting surface 211 of the first pad portion 21A of the first lead 20A are arranged along the first direction x, and are arranged in the first direction x. It is located apart from the one element 31A in the second direction y on the side where the terminal portion 22 of the first lead 20A is located.
  • the plurality of first wires 41 are individually conductively joined to the second electrodes 312 of the plurality of first elements 31A and the terminal portions 22 of the plurality of second leads 20B.
  • the second electrodes 312 of the plurality of first elements 31A are individually connected to the plurality of second leads 20B.
  • each of the first electrodes 311 of the plurality of second elements 31B is electrically connected to the second electrode 312 of one of the plurality of first elements 31A.
  • a composition of the plurality of first wires 41 includes aluminum (Al).
  • the composition of the plurality of first wires 41 may contain copper.
  • the plurality of second wires 42 are individually conductively joined to the second electrodes 312 of the plurality of second elements 31B and the plurality of ground terminals 23, as shown in FIG. Thereby, the second electrodes 312 of the plurality of second elements 31B are electrically connected to the plurality of ground terminals 23 individually.
  • the composition of the plurality of second wires 42 contains aluminum. Alternatively, the composition of the plurality of second wires 42 may contain copper.
  • the plurality of seventh wires 47 are individually conductively joined to the second electrodes 312 of the plurality of semiconductor elements 31 and the upper surface electrodes 321 of the plurality of protection elements 32, as shown in FIGS. Thereby, each of the upper surface electrodes 321 of the plurality of protection elements 32 is electrically connected to the second electrode 312 of one of the plurality of semiconductor elements 31 .
  • the first leads 20A, the plurality of first elements 31A, and the plurality of first wires 41 constitute a plurality of upper arm circuits.
  • the plurality of second leads 20B, the plurality of second elements 31B, the plurality of second wires 42 and the plurality of ground terminals 23 constitute a plurality of lower arm circuits. Therefore, the voltage applied to the gate electrode 313 of each of the multiple first elements 31A is higher than the voltage applied to the gate electrode 313 of each of the multiple second elements 31B.
  • the grounds of the plurality of lower arm circuits are individually set.
  • the plurality of control terminals 24 are located on the opposite side of the terminal portions 22 of the plurality of leads 20 with the die pad portions 21 of the plurality of leads 20 interposed therebetween in the second direction y.
  • the plurality of control terminals 24 are positioned apart from the substrate 11 and supported by the sealing resin 50, like the plurality of ground terminals 23. As shown in FIG. As shown in FIGS. 2 and 4 , part of each of the plurality of control terminals 24 is exposed from the sealing resin 50 .
  • the multiple control terminals 24 include pad sections 241 , multiple power supply sections 242 , multiple first control sections 243 , multiple second control sections 244 , and a dummy section 245 .
  • a plurality of ICs 33 are mounted on the pad section 241 . Further, the pad section 241 is used as a ground for a plurality of ICs 33 .
  • the plurality of ICs 33 are located on the opposite side of the plurality of leads 20 from the terminal portions 22 with the die pad portions 21 of the plurality of leads 20 interposed therebetween in the second direction y. The plurality of ICs 33 overlap the main surface 111 of the substrate 11 when viewed in the thickness direction z.
  • the plurality of ICs 33 includes a first IC 33A and a second IC 33B positioned apart from each other in the first direction x.
  • the plurality of power supply units 242 are supplied with power that is the basis of gate voltages for driving the plurality of first elements 31A.
  • Electrical signals for controlling the first IC 33A are input to and output from the plurality of first controllers 243 .
  • Electrical signals for controlling the second IC 33B are input to and output from the plurality of second control units 244 .
  • the dummy section 245 does not conduct to the plurality of ICs 33 .
  • the first IC 33A is bonded to the pad section 241 via the conductive bonding layer 39. As shown in FIG. As shown in FIG. 3, the first IC 33A is positioned closer to the first pad portions 21A of the plurality of first leads 20A than the second IC 33B. The first IC 33A applies a gate voltage to the gate electrodes 313 of the plurality of first elements 31A.
  • the second IC 33B is bonded to the pad portion 241 via the conductive bonding layer 39, like the first IC 33A. As shown in FIG. 3, the second IC 33B is positioned closer to the second pad portions 21B of the plurality of second leads 20B than the first IC 33A. The second IC 33B applies a gate voltage to the gate electrodes 313 of the plurality of second elements 31B.
  • the plurality of diodes 34 are individually conductively connected to the plurality of power supply units 242 via the conductive bonding layer 39, as shown in FIG.
  • the plurality of diodes 34 prevent the application of a reverse bias to the plurality of power supply units 242 as the plurality of first elements 31A are driven.
  • the plurality of third wires 43 are electrically connected to the first IC 33A and the second electrodes 312 and gate electrodes 313 of the plurality of first elements 31A. Thereby, a gate voltage is applied from the first IC 33A to the gate electrodes 313 of the plurality of first elements 31A. At the same time, the ground of the gate voltage is set in the first IC 33A.
  • the composition of the plurality of third wires 43 contains gold, for example.
  • the multiple fourth wires 44 are electrically connected to the second IC 33B and the gate electrodes 313 of the multiple second elements 31B. Thereby, the gate voltage is applied to the gate electrodes 313 of the plurality of second elements 31B from the second IC 33B.
  • the composition of the plurality of fourth wires 44 includes gold, for example.
  • the plurality of fifth wires 45 are electrically connected to the first IC 33A, the pad section 241, the plurality of power supply sections 242, the plurality of diodes 34, and the plurality of first control sections 243, as shown in FIG. Accordingly, the pad section 241, the plurality of power supply sections 242, the plurality of diodes 34, and the plurality of first control sections 243 are electrically connected to the first IC 33A.
  • the composition of the plurality of fifth wires 45 includes gold, for example.
  • the plurality of sixth wires 46 are connected to the second IC 33B, the pad section 241 and the plurality of second control sections 244, as shown in FIG. Thereby, the pad section 241 and the plurality of second control sections 244 are electrically connected to the second IC 33B.
  • the composition of the plurality of sixth wires 46 includes gold, for example.
  • the dummy terminal 60 is positioned away from the main surface 111 of the substrate 11 when viewed in the thickness direction z, as shown in FIG.
  • the dummy terminal 60 is located on the side opposite to the terminal portions 22 of the plurality of second leads 20B with the terminal portions 22 of the first leads 20A interposed therebetween in the first direction x.
  • part of the dummy terminal 60 is exposed from the sealing resin 50.
  • FIG. 1 shows that
  • the sealing resin 50 covers the plurality of semiconductor elements 31, the plurality of protective elements 32, and a portion of each of the plurality of leads 20. As shown in FIG. The sealing resin 50 is in contact with the main surface 111 of the substrate 11 and the mounting surfaces 211 and end surfaces 213 of the die pad portions 21 of the leads 20 . Further, the sealing resin 50 is in contact with the first side 111A of the principal surface 111, the pair of second sides 111B of the principal surface 111, and the first portion 25. As shown in FIG. The sealing resin 50 has electrical insulation. Sealing resin 50 is made of a material containing, for example, black epoxy resin. The sealing resin 50 has a top surface 51 , a bottom surface 52 , a pair of first side surfaces 53 , a pair of second side surfaces 54 and a plurality of mounting portions 55 .
  • the top surface 51 faces the same side as the main surface 111 of the substrate 11 in the thickness direction z.
  • the bottom surface 52 faces the opposite side of the top surface 51 in the thickness direction z.
  • the back surface 112 of the substrate 11 is exposed from the bottom surface 52 .
  • the pair of first side surfaces 53 are positioned apart from each other in the first direction x.
  • a pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52 .
  • the pair of second side surfaces 54 are positioned apart from each other in the second direction y.
  • a pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52 .
  • Portions of each of the terminal portions 22 of the plurality of leads 20 , the plurality of ground terminals 23 , and the dummy terminal 60 are exposed from one of the pair of second side surfaces 54 .
  • a portion of each of the plurality of control terminals 24 is exposed from the other second side surface 54 of the pair of second side surfaces 54 .
  • the plurality of mounting portions 55 are positioned on both sides of the substrate 11 in the first direction x. As shown in FIGS. 2, 4 and 6, the plurality of mounting portions 55 penetrate the sealing resin 50 in the thickness direction z. In the semiconductor device A10, the plurality of mounting portions 55 are recessed in the first direction x from the pair of first side surfaces 53. As shown in FIG. Alternatively, the plurality of mounting portions 55 may be holes closed around the thickness direction z. Bolts for attaching the semiconductor device A10 to the heat sink are inserted through the plurality of attachment portions 55 .
  • FIG. 14 corresponds to the position of FIG.
  • the first portion 25 includes a recessed portion 25B.
  • the recessed portion 25B is recessed from the end surface 213 of the die pad portion 21 .
  • the indented portion 25B is surrounded by a peripheral edge 211A of the mounting surface 211 of the die pad portion 21 . That is, the invaginated portion 25B is inside the peripheral edge 211A.
  • the recessed portion 25B has a first surface 251 and a second surface 252.
  • the first surface 251 and the second surface 252 are surrounded by the peripheral edge 211A of the mounting surface 211 when viewed in the thickness direction z.
  • the second surface 252 overlaps the first surface 251 when viewed in the thickness direction z.
  • a region of the end surface 213 located between the second surface 252 and the mounting surface 211 in the thickness direction z is oriented perpendicularly to the thickness direction z from the second surface 252 toward the mounting surface 211 . It bulges out to the side where the two faces 252 face.
  • the region of the end surface 213 located between the first surface 251 and the bonding surface 212 of the die pad portion 21 increases in the thickness direction from the first surface 251 toward the bonding surface 212 . It bulges to the side facing the first surface 251 in the direction perpendicular to z.
  • FIG. 16 corresponds to the position of FIG.
  • the first portion 25 includes a bulging portion 25A and an invaginated portion 25B.
  • the recessed portion 25B is located on the side opposite to the mounting surface 211 of the die pad portion 21 with the bulging portion 25A interposed therebetween in the thickness direction z.
  • the position of the recessed portion 25B in the thickness direction z may be opposite to that of the semiconductor device A12.
  • the semiconductor device A10 includes a lead 20 having a mounting surface 211 and an end surface 213, and a sealing resin 50 in contact with the mounting surface 211 and the end surface 213.
  • the end surface 213 is formed with the first portion 25 including at least one of the bulging portion 25A and the recessed portion 25B.
  • the bulging portion 25A is located outside the peripheral edge 211A of the mounting surface 211 of the lead 20 (die pad portion 21).
  • the recessed portion 25B is surrounded by the peripheral edge 211A of the mounting surface 211. As shown in FIG.
  • At least one of the leads 20 and the sealing resin 50 has an anchoring effect in the direction orthogonal to the thickness direction z at the interface between the leads 20 and the sealing resin 50. (anchor effect) occurs. Further, of the interfaces between the leads 20 and the sealing resin 50 , the interfaces having the thickness direction z as an in-plane direction are blocked by the first portion 25 on at least one side in the thickness direction z. For this reason, the first portion 25 resists the shear stress generated at the interface between the lead 20 and the sealing resin 50 with the thickness direction z as the in-plane direction. Therefore, according to the semiconductor device A10, it is possible to suppress peeling of the leads 20 from the sealing resin 50.
  • the first portion 25 includes a bulging portion 25A. Therefore, the lead 20 has an anchoring effect with respect to the sealing resin 50 .
  • the bulging portion 25A has a first surface 251, a second surface 252, and a third surface 253 facing the same side as the end surface 213 of the lead 20 in the direction perpendicular to the thickness direction z. This increases the surface area of the interface between the lead 20 located near the end surface 213 of the lead 20 and the sealing resin 50 . Therefore, the bonding strength of the leads 20 to the sealing resin 50 can be further increased.
  • the first portion 25 includes a recessed portion 25B. Therefore, an anchoring effect is generated in the sealing resin 50 with respect to the leads 20 .
  • the recessed portion 25B has a first surface 251 and a second surface 252 .
  • the anchoring effect of the sealing resin 50 with respect to the end surface 213 is generated at a plurality of locations in a cross section whose in-plane direction is the thickness direction z and the direction in which the end surface 213 of the die pad portion 21 faces.
  • the concentration of shear stress generated at the interface between the lead 20 and the sealing resin 50 due to the anchoring effect can be reduced.
  • the second surface 252 overlaps the first surface 251 when viewed in the thickness direction z. As a result, the magnitude of the anchoring effect occurring at multiple locations becomes uniform over the thickness direction z.
  • the first portion 25 includes a bulging portion 25A and a recessed portion 25B. Therefore, an anchoring effect is generated between the lead 20 and the sealing resin 50 . Furthermore, at the boundary between the bulging portion 25A and the recessed portion 25B in the thickness direction z, the dimension of the first portion 25 is becomes relatively large. Therefore, among the shear stresses generated at the interface between the lead 20 and the sealing resin 50, the first portion 25 can more strongly resist the shear stress generated at the interface having the thickness direction z as the in-plane direction. do.
  • the sealing resin 50 is formed with a plurality of mounting portions 55 penetrating through the sealing resin 50 in the thickness direction z.
  • a plurality of mounting portions 55 are positioned on both sides of the substrate 11 in the first direction x.
  • This compressive force increases the shear stress generated at the interface between the lead 20 and the sealing resin 50 . Therefore, by forming the first portions 25 on the end surfaces 213 of the leads 20 of the semiconductor device A10, the leads 20 are less likely to separate from the sealing resin 50 even if the semiconductor device A10 receives a greater compressive force. As a result, the distance between any one of the mounting portions 55 and the lead 20 can be further shortened when viewed in the thickness direction z. This contributes to miniaturization of the semiconductor device A10.
  • the first portion 25 may be formed over the entire end surface 213 of the lead 20 . However, in this case, there is concern about a decrease in the manufacturing efficiency of the semiconductor device A10. Therefore, the first portion 25 may be formed only in a region of the end surface 213 located relatively close to one of the plurality of mounting portions 55 of the sealing resin 50 .
  • the semiconductor device A 10 further includes a bonding layer 12 interposed between the main surface 111 of the substrate 11 and the die pad portion 21 of the lead 20 .
  • the bonding layer 12 has electrical insulation.
  • the semiconductor device A10 has a plurality of leads 20, a plurality of die pad portions 21 are bonded to the main surface 111.
  • the bonding layer 12 has this structure, even if the bonding interval between the two adjacent die pad portions 21 is reduced as much as possible, there is no risk of short-circuiting between the two die pad portions 21.
  • the bonding layer 12 is made of a material containing resin. As a result, the coefficient of linear expansion of the bonding layer 12 becomes relatively large. With this configuration, the thermal stress generated at the interface between the substrate 11 and the bonding layer 12 is reduced among the thermal stresses generated at the bonding interface between the substrate 11 and the lead 20 . Thereby, the occurrence of cracks propagating to the substrate 11 can be more effectively suppressed.
  • the length of the first side 111A of the main surface 111 of the substrate 11 is longer than the length of the second side 111B of the main surface 111.
  • the die pad portion 21 includes a first pad portion 21A and a second pad portion 21B located next to the first pad portion 21A.
  • the second pad portion 21B can be arranged next to the first pad portion 21A in the first direction x.
  • the terminal portions 22 are separated into one connected to the first pad portion 21A and another connected to the second pad portion 21B, the separated terminal portions 22 are arranged along the first direction x. can be done. As a result, the separated terminal portions 22 can be prevented from crossing each other.
  • the semiconductor element 31 includes a plurality of first elements 31A bonded to the first pad portions 21A and second elements 31B bonded to the second pad portions 21B.
  • the multiple first elements 31A are arranged along the first direction x.
  • the coefficient of linear expansion of each of the plurality of first elements 31A is smaller than the coefficient of linear expansion of the first pad portion 21A.
  • thermal expansion/contraction of the first pad portion 21A in the first direction x is restrained by the plurality of first elements 31A. Therefore, thermal strain in the first direction x occurring in the first pad portion 21A can be suppressed.
  • the thermal strain of the first pad portion 21A is suppressed, the occurrence of cracks propagating from the bonding interface between the substrate 11 and the lead 20 to the substrate 11 is effectively suppressed.
  • the semiconductor device A10 includes a plurality of protection elements 32 electrically connected to the first pad portion 21A.
  • the plurality of protection elements 32 are arranged along the first direction x and positioned away from the plurality of first elements 31A in the second direction y.
  • the coefficient of linear expansion of each of the protective elements 32 is smaller than the coefficient of linear expansion of the first pad portion 21A.
  • thermal expansion/contraction of the first pad portion 21A in the first direction x and the second direction y is restricted by the plurality of first elements 31A and the plurality of protection elements 32 . Therefore, thermal strain in each of the first direction x and the second direction y generated in the first pad portion 21A can be suppressed.
  • the substrate 11 has a back surface 112 facing away from the main surface 111 in the thickness direction z.
  • the back surface 112 is exposed from the sealing resin 50 . As a result, it is possible to improve the heat dissipation of the semiconductor device A10.
  • FIG. 18 corresponds to FIG. 10 showing the semiconductor device A10.
  • FIG. 21 corresponds to FIG. 13 showing the semiconductor device A10.
  • the semiconductor device A20 differs from the aforementioned semiconductor device A10 in the configuration of the plurality of leads 20 .
  • the end face 213 of the first pad portion 21A of the first lead 20A and the end face 213 of at least one of the second pad portions 21B of the plurality of second leads 20B are provided with a plurality of A second part 26 is formed.
  • the plurality of second portions 26 are formed by pressing or laser processing.
  • the plurality of second parts 26 are arranged in a direction orthogonal to the thickness direction z.
  • the first portion 25 is positioned between two adjacent second portions 26 among the plurality of second portions 26 . Therefore, the first portion 25 and any one of the plurality of second portions 26 are adjacent to each other in the direction orthogonal to the thickness direction z.
  • the first portion 25 includes a plurality of regions located apart from each other in the direction in which the plurality of second portions 26 are arranged.
  • the plurality of second parts 26 are recessed from the end surface 213 of the die pad section 21 and penetrate the die pad section 21 in the thickness direction z.
  • the plurality of second parts 26 have concave surfaces 261 .
  • the concave surface 261 defines one of the plurality of second portions 26 .
  • the concave surface 261 is connected to the mounting surface 211 , the bonding surface 212 and the end surface 213 of the die pad section 21 .
  • the semiconductor device A20 includes leads 20 having a mounting surface 211 and an end surface 213, and a sealing resin 50 in contact with the mounting surface 211 and the end surface 213.
  • the end surface 213 is formed with the first portion 25 including at least one of the bulging portion 25A and the recessed portion 25B.
  • the bulging portion 25A is located outside the peripheral edge 211A of the mounting surface 211 of the lead 20 (die pad portion 21).
  • the recessed portion 25B is surrounded by the peripheral edge 211A of the mounting surface 211. As shown in FIG. Therefore, it is possible to suppress peeling of the leads 20 from the sealing resin 50 also by the semiconductor device A20. Furthermore, since the semiconductor device A20 has the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the effects of the configuration.
  • a second portion 26 is formed on the end surface 213 of the lead 20 .
  • the second portion 26 is recessed from the end surface 213 and penetrates the lead 20 in the thickness direction z.
  • the first portion 25 and the second portion 26 are adjacent to each other in the direction perpendicular to the thickness direction z.
  • FIG. 22 is transparent through the sealing resin 50 for convenience of understanding.
  • the permeated sealing resin 50 is indicated by imaginary lines.
  • the semiconductor device A30 differs from the semiconductor device A10 described above in that it does not include a plurality of protection elements 32 and a plurality of seventh wires 47.
  • the plurality of protective elements 32 are not electrically connected to the die pad portions 21 of the plurality of leads 20 .
  • the plurality of semiconductor elements 31 are MOSFETs with built-in so-called free wheel diodes, and the DC power input to the terminal portion 22 of the first lead 20A and the plurality of ground terminals 23 is relatively low. It is established on the condition that The plurality of first elements 31A are arranged along a direction perpendicular to the thickness direction z and inclined with respect to the first direction x and the second direction y.
  • the semiconductor device A30 includes a lead 20 having a mounting surface 211 and an end surface 213, and a sealing resin 50 in contact with the mounting surface 211 and the end surface 213.
  • the end surface 213 is formed with the first portion 25 including at least one of the bulging portion 25A and the recessed portion 25B.
  • the bulging portion 25A is located outside the peripheral edge 211A of the mounting surface 211 of the lead 20 (die pad portion 21).
  • the recessed portion 25B is surrounded by the peripheral edge 211A of the mounting surface 211. As shown in FIG. Therefore, it is possible to suppress peeling of the leads 20 from the sealing resin 50 also by the semiconductor device A30. Further, since the semiconductor device A30 has the same configuration as the semiconductor device A10, the semiconductor device A30 also exhibits the effects of the configuration.
  • the semiconductor element 31 includes a plurality of first elements 31A bonded to first pad portions 21A (first leads 20A) and second elements 31B bonded to second pad portions 21B (second leads 20B). .
  • the plurality of first elements 31A are arranged along a direction perpendicular to the thickness direction z and inclined with respect to the first direction x and the second direction y. As a result, thermal expansion/contraction of the first pad portion 21A in the first direction x and the second direction y is restrained by the plurality of first elements 31A. Therefore, thermal strain in each of the first direction x and the second direction y generated in the first pad portion 21A can be suppressed.
  • Appendix 1 a lead having a mounting surface facing the thickness direction and an end surface facing the direction perpendicular to the thickness direction and connected to the mounting surface; a semiconductor element bonded to the mounting surface; a sealing resin that covers the semiconductor element and is in contact with the mounting surface and the end surface; A first portion is formed on the end face, The first part includes at least one of a bulging portion protruding from the end surface and a recessed portion recessed from the end surface, When viewed in the thickness direction, the bulging portion is located outside the peripheral edge of the mounting surface, The semiconductor device, wherein the recess is surrounded by the peripheral edge when viewed in the thickness direction.
  • the semiconductor device according to appendix 1 wherein the first part is located away from the peripheral edge.
  • Appendix 3. The first part has a first surface and a second surface facing the same side as the end surface in a direction orthogonal to the thickness direction, the second surface is positioned between the mounting surface and the first surface in the thickness direction; 3.
  • the semiconductor device according to appendix 1 or 2 wherein the first surface and the second surface are located apart from the peripheral edge when viewed in the thickness direction.
  • the bulging portion includes the first surface and the second surface, 3.
  • the bulging portion has a third surface facing the same side as the end surface in a direction orthogonal to the thickness direction, The third surface is located on the opposite side of the second surface across the first surface in the thickness direction, 5.
  • the semiconductor device according to appendix 4 wherein the third surface is positioned between the peripheral edge and the first surface when viewed in the thickness direction.
  • Appendix 6. 3.
  • Appendix 7. 7.
  • Device. Appendix 9. The semiconductor device according to any one of appendices 3 to 8, wherein the second surface is parallel to the first surface.
  • Appendix 10. A second portion is formed on the end face, 10.
  • Appendix 11. The semiconductor device according to appendix 10, wherein the first portion and the second portion are adjacent to each other in a direction orthogonal to the thickness direction.
  • the lead has a die pad portion having the mounting surface and the end surface, and a terminal portion connected to the die pad portion, 12.
  • the main surface has a first side extending in a first direction orthogonal to the thickness direction and a second side extending in a direction orthogonal to the thickness direction and the first direction, 14.
  • Appendix 15. The semiconductor device according to appendix 14, wherein the length of the first side is longer than the length of the second side.
  • the sealing resin is formed with a plurality of mounting portions penetrating through the sealing resin in the thickness direction, 16.
  • the semiconductor device according to appendix 15, wherein the plurality of mounting portions are positioned on both sides of the substrate in the first direction.
  • the substrate has a back surface facing away from the principal surface in the thickness direction, 17.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente divulgation concerne un dispositif à semi-conducteurs qui comprend un conducteur, un élément semi-conducteur et une résine d'étanchéité. Le conducteur comprend : une surface de montage faisant face à la direction de l'épaisseur ; et une surface d'extrémité qui fait face à une direction orthogonale à la direction de l'épaisseur et qui se connecte à la surface de montage. L'élément semi-conducteur est lié à la surface de montage. La résine d'étanchéité recouvre l'élément semi-conducteur et entre en contact avec la surface de montage et la surface d'extrémité. Une première section est formée sur la surface d'extrémité, et la première section comprend une partie renflée faisant saillie à partir de la surface d'extrémité et/ou une partie concave en retrait de la surface d'extrémité. La partie renflée est positionnée vers l'extérieur d'un bord circonférentiel de la surface de montage telle qu'observée dans la direction de l'épaisseur. La partie concave est entourée par le bord circonférentiel telle qu'observée dans la direction de l'épaisseur.
PCT/JP2022/034711 2021-10-13 2022-09-16 Dispositif à semi-conducteurs WO2023063025A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202280069095.5A CN118103973A (zh) 2021-10-13 2022-09-16 半导体装置

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JP2021-168361 2021-10-13
JP2021168361 2021-10-13

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WO2023063025A1 true WO2023063025A1 (fr) 2023-04-20

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016136648A (ja) * 2016-04-12 2016-07-28 日亜化学工業株式会社 リードフレーム、樹脂付きリードフレーム、光半導体装置
JP2017152496A (ja) * 2016-02-23 2017-08-31 株式会社三井ハイテック リードフレーム、及び半導体パッケージの製造方法
JP2019102467A (ja) * 2017-11-28 2019-06-24 トヨタ自動車株式会社 半導体装置
WO2019176783A1 (fr) * 2018-03-12 2019-09-19 ローム株式会社 Dispositif à semi-conducteur et structure de montage pour dispositif à semi-conducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017152496A (ja) * 2016-02-23 2017-08-31 株式会社三井ハイテック リードフレーム、及び半導体パッケージの製造方法
JP2016136648A (ja) * 2016-04-12 2016-07-28 日亜化学工業株式会社 リードフレーム、樹脂付きリードフレーム、光半導体装置
JP2019102467A (ja) * 2017-11-28 2019-06-24 トヨタ自動車株式会社 半導体装置
WO2019176783A1 (fr) * 2018-03-12 2019-09-19 ローム株式会社 Dispositif à semi-conducteur et structure de montage pour dispositif à semi-conducteur

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