WO2024034197A1 - 基板処理装置及び基板処理方法 - Google Patents

基板処理装置及び基板処理方法 Download PDF

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Publication number
WO2024034197A1
WO2024034197A1 PCT/JP2023/016358 JP2023016358W WO2024034197A1 WO 2024034197 A1 WO2024034197 A1 WO 2024034197A1 JP 2023016358 W JP2023016358 W JP 2023016358W WO 2024034197 A1 WO2024034197 A1 WO 2024034197A1
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WIPO (PCT)
Prior art keywords
substrate
laser
wafer
region
laser beam
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Ceased
Application number
PCT/JP2023/016358
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English (en)
French (fr)
Japanese (ja)
Inventor
陽平 山下
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2024540264A priority Critical patent/JP7808697B2/ja
Priority to KR1020257007128A priority patent/KR20250048298A/ko
Priority to US19/101,900 priority patent/US20260042171A1/en
Priority to CN202380057008.9A priority patent/CN119631159A/zh
Publication of WO2024034197A1 publication Critical patent/WO2024034197A1/ja
Anticipated expiration legal-status Critical
Priority to JP2026006455A priority patent/JP2026065157A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Definitions

  • the present disclosure relates to a substrate processing apparatus and a substrate processing method.
  • Patent Document 1 discloses that in a semiconductor substrate on which a peeled oxide film and a semiconductor element are formed, the semiconductor element is transferred to a transfer destination substrate.
  • the method described in Patent Document 1 includes a step of locally heating the peeled oxide film by irradiating light from the back surface of the semiconductor substrate, and a step of heating the peeled oxide film locally and/or at the interface between the peeled oxide film and the semiconductor substrate. and transferring the semiconductor element to the transfer destination substrate.
  • the technology according to the present disclosure appropriately peels off the first substrate and the laser absorption layer in a polymerized substrate in which the laser absorption layer is formed at the interface of the first substrate and the second substrate.
  • One aspect of the present disclosure is a substrate processing apparatus that processes a polymerized substrate formed by laminating a first substrate, an interface layer including at least a laser absorption layer, and a second substrate, the apparatus holding the polymerized substrate.
  • a substrate holding section a laser irradiation section that irradiates the polymerized substrate held by the substrate holding section with a laser beam, and a movement mechanism that relatively moves the substrate holding section and the laser irradiation section in a horizontal direction; a rotation mechanism that rotates the substrate holding section; and a control section, in the overlapping substrate, an outer circumferential area including an unbonded area of the first substrate and the second substrate, and a radial direction of the outer circumferential area.
  • An inner circumferential region is set on the inside and arranged in a bonding region between the first substrate and the second substrate, and the control unit rotates the overlapping substrate and applies the laser beam to the overlapping substrate.
  • control to cause separation at the interface between the first substrate and the laser absorption layer, or at the interface between the interface layer and the laser absorption layer;
  • Control is performed to irradiate the laser beam while moving it from the inside to the outside in the radial direction.
  • the first substrate and the laser absorption layer can be appropriately separated.
  • FIG. 1 is a plan view schematically showing the configuration of a wafer processing system.
  • FIG. 2 is a plan view schematically showing the configuration of a laser irradiation device.
  • FIG. 2 is a side view schematically showing the configuration of a laser irradiation device.
  • FIG. 3 is a side view showing how the separation device operates.
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer irradiated with laser light.
  • FIG. 2 is a flow diagram showing the main steps of wafer processing in the wafer processing system.
  • FIG. 3 is an explanatory diagram showing how heat generated in a polymerized wafer is diffused.
  • FIG. 1 is a plan view schematically showing the configuration of a wafer processing system.
  • FIG. 2 is a plan view schematically showing the configuration of a laser irradiation device.
  • FIG. 3 is a side view showing how the separation device operates.
  • FIG. 2 is an explanatory diagram showing a
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer irradiated with laser light.
  • FIG. 3 is an explanatory diagram showing how the first wafer and the laser absorption layer are peeled off.
  • FIG. 3 is an explanatory diagram showing how the first wafer and the laser absorption layer are peeled off.
  • FIG. 2 is a flow diagram showing the main steps of wafer processing in the wafer processing system.
  • FIG. 3 is an explanatory diagram showing regions of a superimposed wafer, rotational speed of a chuck in each region, and frequency of laser light in each region. It is a side view which shows an outer peripheral area and a 1st inner peripheral area.
  • FIG. 3 is an explanatory diagram showing a state of a polymerized wafer irradiated with laser light.
  • FIG. 3 is an explanatory diagram showing how the first wafer and the laser absorption layer are peeled off.
  • FIG. 2 is a flow diagram showing the main steps of wa
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer whose outer peripheral area is irradiated with laser light.
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer whose outer peripheral area is irradiated with laser light.
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer whose outer peripheral area is irradiated with laser light.
  • FIG. 3 is an explanatory diagram showing a state of a superposed wafer in which a second inner peripheral region and a first inner peripheral region are irradiated with laser light.
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer whose first inner peripheral region is irradiated with a laser beam.
  • FIG. 2 is an explanatory diagram showing a state of a polymerized wafer whose central region is irradiated with laser light. It is an explanatory view showing the state of a polymerized wafer irradiated with laser light in another embodiment. It is an explanatory view showing the state of a polymerized wafer irradiated with laser light in another embodiment. It is an explanatory view showing the state of a polymerized wafer irradiated with laser light in another embodiment. It is an explanatory view showing the state of a polymerized wafer irradiated with laser light in another embodiment.
  • FIG. 3 is an explanatory diagram showing how a peel-off promoting layer and a laser absorption layer are peeled off.
  • FIG. 7 is a flow diagram showing the main steps of wafer processing according to another embodiment.
  • a device layer formed on the surface of a first wafer is transferred to a second wafer. is being carried out.
  • the device layer is transferred to the second wafer by irradiating the laser absorption layer formed between the first wafer and the device layer with a laser beam to separate the first wafer and the laser absorption layer.
  • the laser absorption layer is irradiated with the laser light in a pulsed manner.
  • the peripheral edge of the stacked wafer has a chamfered portion (bevel portion), and this peripheral edge is not bonded. That is, the outer peripheral region of the overlapping wafer includes an unbonded region, and the bonding strength at the interface between the first wafer (including the device layer) and the second wafer is low at the boundary between the unbonded region and the bonded region. In such a case, when the outer circumferential region is irradiated with laser light, peeling occurs in the outer circumferential region at the interface between the first wafer and the second wafer, where the bonding strength is low.
  • the technology according to the present disclosure appropriately peels off the first substrate and the laser absorption layer in a polymerized substrate in which the laser absorption layer is formed at the interface of the first substrate and the second substrate.
  • a wafer processing system including a laser irradiation device as a substrate processing apparatus and a wafer processing method as a substrate processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals and redundant explanation will be omitted.
  • a wafer processing system 1 processes a stacked wafer T, which is a stacked substrate in which a first wafer W and a second wafer S are bonded together, as shown in FIG.
  • the first wafer W the surface to be joined to the second wafer S will be referred to as the front surface Wa
  • the surface opposite to the front surface Wa will be referred to as the back surface Wb.
  • the surface to be joined to the first wafer W is referred to as the front surface Sa
  • the surface opposite to the front surface Sa is referred to as the back surface Sb.
  • the first wafer W serving as the first substrate is, for example, a semiconductor wafer such as a silicon substrate.
  • the first wafer W has a substantially disk shape.
  • a laminated film in which a plurality of films are laminated is formed on the surface Wa of the first wafer W.
  • the laminated film includes, in order from the surface Wa side, a laser absorption layer P, a device layer Dw, and a surface film Fw.
  • the device layer Dw includes multiple devices. Examples of the surface film Fw include an oxide film (THOX film, SiO 2 film, TEOS film), SiC film, SiCN film, adhesive, and the like.
  • the first wafer W is bonded to the second wafer S via this surface film Fw.
  • the device layer Dw and the surface film Fw may not be formed on the surface Wa.
  • the laser absorption layer P is formed on the second wafer S side, and a device layer Ds on the second wafer S side, which will be described later, is transferred to the first wafer W side.
  • the laser absorption layer P absorbs laser light irradiated from the laser irradiation section 110 as described later.
  • an oxide film SiO 2 film, TEOS film
  • the laser absorption layer P is formed, for example, by a CVD (Chemical Vapor Deposition) process outside the wafer processing system 1, which will be described later.
  • the composition of the oxide film (SiO 2 film, TEOS film) as the laser absorption layer P can be arbitrarily changed depending on the type and mixing ratio of the processing gas used in the CVD process.
  • the second wafer S serving as the second substrate is, for example, a semiconductor wafer such as a silicon substrate.
  • a laminated film is formed on the surface Sa of the second wafer S.
  • the laminated film has a device layer Ds and a surface film Fs in this order from the surface Sa side.
  • the device layer Ds and the surface film Fs are similar to the device layer Dw and the surface film Fw of the first wafer W, respectively.
  • the surface film Fw of the first wafer W and the surface film Fs of the second wafer S are bonded. Note that the device layer Ds and the surface film Fs may not be formed on the surface Sa.
  • the laminated film formed at the interface between the first wafer W and the second wafer S specifically, the laser absorption layer P, the device layers Dw, Ds, and the surface films Fw, Fs. It may also be referred to as an "interface layer.”
  • the interface layer includes at least the laser absorption layer P.
  • the type of laminated film formed at the interface between the first wafer W and the second wafer S is not limited to the example shown in FIG. 1.
  • the laminated film may include a "peel-promoting film" to be described later for appropriately peeling the first wafer W and the laser absorption layer P.
  • the above-mentioned interface layer includes a peel-off promoting film.
  • the wafer processing system 1 has a configuration in which a loading/unloading block 10, a transport block 20, and a processing block 30 are integrally connected.
  • the loading/unloading block 10 and the processing block 30 are provided around the transport block 20.
  • the carry-in/out block 10 is arranged on the Y-axis negative direction side of the conveyance block 20.
  • a laser irradiation device 31 (described later) and a separation device 32 (described later) of the processing block 30 are arranged on the X-axis negative direction side of the transport block 20, and a first cleaning device 33 (described later) and a second cleaning device 34 (described later) are located on the transport block 20. 20 in the positive direction of the X-axis.
  • cassettes Ct, Cw, and Cs each capable of accommodating a plurality of stacked wafers T, a plurality of first wafers W, and a plurality of second wafers S are carried in and out of the carry-in/out block 10, respectively.
  • the loading/unloading block 10 is provided with a cassette mounting table 11 .
  • a plurality of cassettes for example, three cassettes Ct, Cw, and Cs, can be placed on the cassette mounting table 11 in a line in the X-axis direction. Note that the number of cassettes Ct, Cw, and Cs placed on the cassette mounting table 11 is not limited to this embodiment, and can be arbitrarily determined.
  • the transport block 20 is provided with a wafer transport device 22 configured to be movable on a transport path 21 extending in the X-axis direction.
  • the wafer transport device 22 has, for example, two transport arms 23, 23 that hold and transport the stacked wafer T, the first wafer W, or the second wafer S.
  • Each transport arm 23 is configured to be movable in the horizontal direction, vertical direction, around the horizontal axis, and around the vertical axis. Note that the configuration of the transport arm 23 is not limited to this embodiment, and may have any configuration.
  • the wafer transport device 22 then transfers the superposed wafers T, Cs, Ct, Cw, and Cs of the cassette mounting table 11, the laser irradiation device 31, the separation device 32, the first cleaning device 33, and the second cleaning device 34 to the cassettes Ct, Cw, and Cs on the cassette mounting table 11. It is configured to be able to transport a first wafer W and a second wafer S.
  • the processing block 30 includes a laser irradiation device 31, a separation device 32, a first cleaning device 33, and a second cleaning device 34.
  • the laser irradiation device 31 and the separation device 32 are stacked and arranged on the X-axis negative direction side of the transport block 20.
  • the first cleaning device 33 and the second cleaning device 34 are stacked and arranged on the X-axis positive direction side of the transport block 20. Note that the number and arrangement of the laser irradiation device 31, the separation device 32, the first cleaning device 33, and the second cleaning device 34 are not limited to these.
  • the laser irradiation device 31 irradiates the inside of the polymerized wafer T, more specifically, the laser absorption layer P formed on the front surface Wa of the first wafer W, with a laser beam, thereby irradiating the first wafer W and the laser absorption layer P. decreases the bonding strength at the interface.
  • a delivery position A1 and a processing position A2 are set inside the laser irradiation device 31.
  • the transfer position A1 is a position where the stacked wafer T can be transferred from the transport arm 23 to the chuck 100 described below, and a position where the stacked wafer T (laser absorption layer P) can be imaged by the camera 120 described below.
  • the processing position A2 is a position where the polymerized wafer T (laser absorption layer P) can be irradiated with laser light from a laser irradiation unit 110, which will be described later.
  • the laser irradiation device 31 has a chuck 100 as a substrate holding section that holds the overlapping wafer T on its upper surface.
  • the chuck 100 has a holding surface for the stacked wafer T on its upper surface, and holds the entire back surface Sb of the second wafer S by suction or a part of the radially inner side of the back surface Sb.
  • the chuck 100 is, for example, an electrostatic chuck (ESC) or a vacuum chuck.
  • the chuck 100 is provided with a lifting pin (not shown) for supporting the stacked wafer T from below and lifting it up and down.
  • the elevating pin is inserted into a through hole (not shown) formed through the chuck 100 and is configured to be movable up and down.
  • the chuck 100 is supported by a slider table 102 via an air bearing 101.
  • a rotation mechanism 103 is provided on the lower surface side of the slider table 102.
  • the rotation mechanism 103 has a built-in motor as a drive source, for example.
  • the chuck 100 is configured to be rotatable around the ⁇ axis (vertical axis) by a rotation mechanism 103 via an air bearing 101.
  • the slider table 102 is movable between the above-mentioned delivery position A1 and processing position A2 by a moving mechanism 104 provided on the lower surface side of the slider table 102 along a rail 106 provided on the base 105 and extending in the Y-axis direction. It is configured.
  • the driving source for the moving mechanism 104 is not particularly limited, but a linear motor may be used, for example.
  • a laser irradiation unit 110 is provided above the chuck 100 at the processing position A2.
  • the laser irradiation unit 110 includes a laser head 111, an optical system 112, and a lens 113.
  • the laser irradiation unit 110 can scan a laser beam.
  • scanning the laser beam means moving the laser beam irradiated from the lens 113 of the laser irradiation unit 110 with respect to the laser absorption layer P.
  • the laser head 111 includes a laser oscillator (not shown) that oscillates laser light in a pulsed manner.
  • This laser light is a so-called pulsed laser.
  • the laser beam is a CO 2 laser beam, and the wavelength of the CO 2 laser beam is, for example, 8.9 ⁇ m to 11 ⁇ m.
  • the laser head 111 may include equipment other than the laser oscillator, such as an amplifier.
  • the optical system 112 includes an optical element (not shown) that controls the intensity and position of the laser beam, an attenuator (not shown) that attenuates the laser beam and adjusts the output, and a laser scanning section (not shown) that scans the laser beam. (not shown).
  • an optical element that controls the intensity and position of the laser beam
  • an attenuator that attenuates the laser beam and adjusts the output
  • a laser scanning section (not shown) that scans the laser beam. (not shown).
  • a rotary wedge scanner or a galvano scanner is used as the laser scanning unit.
  • the optical system 112 may be configured to be able to control branching of laser light.
  • the lens 113 irradiates the polymerized wafer T held by the chuck 100 with laser light.
  • the laser light emitted from the laser irradiation unit 110 passes through the first wafer W and is irradiated onto the laser absorption layer P.
  • the lens 113 may be configured to be movable in the horizontal direction by a moving mechanism (not shown), or may be configured to be vertically movable by a lifting mechanism (not shown).
  • a camera 120 is provided above the chuck 100 at the delivery position A1.
  • the camera 120 includes one or more cameras selected from macro cameras, micro cameras, and the like. Note that the camera 120 may be configured to be movable in the horizontal direction by a moving mechanism (not shown), or may be configured to be vertically movable by a lifting mechanism (not shown).
  • the camera 120 images the stacked wafer T held by the chuck 100.
  • the camera 120 includes, for example, a coaxial lens, emits infrared light (IR), and receives reflected light from an object. Image data captured by the camera 120 is output to a control device 40, which will be described later.
  • the wafer processing system 1 has a control device 40, and the control device 40 also functions as a control unit that is provided in the laser irradiation device 31 and controls the laser irradiation device 31.
  • the separation device 32 as a separation unit separates the second wafer S (polymerized wafer T) from the interface between the first wafer W and the laser absorption layer P, which is the separation portion, and whose bonding strength has been reduced by the laser irradiation device 31.
  • the first wafer W is separated from the wafer.
  • the separation device 32 includes a suction chuck 200 that suction-holds the back surface Sb of the second wafer S from below, and a suction pad 210 that suction-holds the back surface Wb of the first wafer W from above. and has.
  • the suction chuck 200 suction-holds the second wafer S
  • the suction pad 210 suction-holds the first wafer W, and then raises the suction pad 210.
  • the first wafer W is peeled off from the laser absorption layer P.
  • the configuration of the separation device 32 is not limited to this, and can take any configuration as long as it can separate the first wafer W from the second wafer S.
  • the first cleaning device 33 cleans the front surface Sa side of the second wafer S separated by peeling in the separation device 32. For example, a brush is brought into contact with the laser absorption layer P on the front surface Sa side of the second wafer S to clean the laser absorption layer P. Note that a pressurized cleaning liquid may be used to clean the second wafer S. Further, the first cleaning device 33 may have a configuration that cleans the back surface Sb of the second wafer S as well as the front surface Sa side.
  • the second cleaning device 34 cleans the front surface Wa side of the first wafer W separated by peeling in the separation device 32. For example, a brush is brought into contact with the front surface Wa of the first wafer W to clean the front surface Wa. Note that a pressurized cleaning liquid may be used to clean the first wafer W. Further, the second cleaning device 34 may be configured to clean the front surface Wa side of the first wafer W as well as the back surface Wb.
  • the first cleaning device 33 for cleaning the second wafer S and the second cleaning device 34 for cleaning the first wafer W are arranged independently.
  • the cleaning of the first wafer W and the cleaning of the second wafer S may be performed using the same cleaning apparatus.
  • the first wafer W and the second wafer S may be cleaned simultaneously or independently.
  • the first wafer W is separated from the second wafer S using the separation device 32, but such separation may be performed inside the laser irradiation device 31.
  • a transfer pad (not shown) that can be raised and lowered is provided at the delivery position A1 of the laser irradiation device 31. Then, with the chuck 100 suction-holding the second wafer S, the transfer pad suction-holds the first wafer W, and by further raising the transfer pad, the transfer from the second wafer S to the first wafer W is performed. Peel off.
  • the above wafer processing system 1 is provided with a control device 40 as a control section.
  • the control device 40 is, for example, a computer, and has a program storage section (not shown).
  • the program storage unit stores a program for controlling the processing of the stacked wafers T in the wafer processing system 1.
  • the program storage unit also stores programs for controlling the operations of drive systems such as the various processing devices and transport devices described above to realize wafer processing in the wafer processing system 1, which will be described later.
  • the above program may be one that has been recorded on a computer-readable storage medium H, and may have been installed in the control device 40 from the storage medium H. Further, the storage medium H may be temporary or non-temporary.
  • the first wafer W and the second wafer S are bonded in a bonding device (not shown) outside the wafer processing system 1 to form a superposed wafer T in advance.
  • a cassette Ct containing a plurality of stacked wafers T is placed on the cassette mounting table 11 of the loading/unloading block 10.
  • the superposed wafer T in the cassette Ct is taken out by the wafer transport device 22 and transported to the laser irradiation device 31.
  • the stacked wafer T is transferred from the transfer arm 23 to a chuck 100 disposed at a transfer position A1, and the back surface Sb of the second wafer S is held by suction on the chuck 100.
  • the moving mechanism 104 moves the chuck 100 to the processing position A2.
  • the laser irradiation unit 110 focuses on the laser absorption layer P, more specifically, the interface between the first wafer W and the laser absorption layer P, and the laser beam L (CO 2 laser) is directed onto the interface. irradiate light) in a pulsed manner.
  • the laser light L passes through the first wafer W from the back surface Wb side of the first wafer W and is absorbed in the laser absorption layer P.
  • This laser beam L reduces the bonding strength between the first wafer W and the laser absorption layer P.
  • the bonding strength is reduced refers to a state in which the bonding strength is reduced at least compared to before irradiation with the laser beam L
  • the term “bonding strength is reduced” refers to a state in which the bonding strength is reduced at least compared to before irradiation with the laser beam L. including. Note that the mechanism by which the bonding strength between the first wafer W and the laser absorption layer P decreases due to irradiation with the laser beam L will be described in detail later.
  • the camera 120 When irradiating the laser light L to the laser absorption layer P at the processing position A2, first, the camera 120 images the superposed wafer T (first wafer W). Image data captured by camera 120 is output to control device 40 . The control device 40 determines the irradiation start position of the laser light L onto the laser absorption layer P based on the image data.
  • the laser beam L is irradiated from the laser irradiation unit 110 to the entire surface of the laser absorption layer P in a plan view at desired intervals, thereby increasing the bonding strength on the entire surface of the interface between the first wafer W and the laser absorption layer P. decrease. Details of the method of irradiating the laser light L onto the laser absorption layer P will be described later.
  • the chuck 100 (polymerized wafer T) is then moved by the moving mechanism 104. Move to delivery position A1.
  • the stacked wafer T on the chuck 100 is transferred to the transfer arm 23 of the wafer transfer device 22 and transferred to the separation device 32.
  • the separation device 32 as shown in FIG. 5(a), the back surface Sb of the second wafer S is held by suction with a suction chuck 200, and the back surface Wb of the first wafer W is further held by suction with a suction pad 210.
  • the suction pad 210 is raised to separate the first wafer W from the laser absorption layer P. .
  • the bonding strength at the interface between the first wafer W and the laser absorption layer P is reduced by the irradiation of the laser beam L as described above, the bonding strength between the first wafer W and the laser absorption layer P is reduced without applying a large load.
  • the wafer W can be separated.
  • the separated first wafer W is transferred from the suction pad 210 to the transfer arm 23 of the wafer transfer device 22, and then transferred to the second cleaning device 34.
  • the first wafer W carried out from the separation device 32 is turned over, for example, by the operation of a reversing device (not shown) or the suction pad 210, so that the front surface Wa is facing upward. Thereafter, it may be transported to the second cleaning device 34.
  • the surface Wa of the first wafer W which is the surface separated by the separation device 32, is cleaned.
  • the second cleaning device 34 may clean the back surface Wb as well as the front surface Wa. Further, separate cleaning sections may be provided to clean the front surface Wa and the back surface Wb, respectively. Thereafter, the first wafer W that has been cleaned by the second cleaning device 34 is transferred to the cassette Cw of the cassette mounting table 11 by the wafer transfer device 22.
  • the second wafer S held by the suction chuck 200 is transferred to the transfer arm 23 and transferred to the first cleaning device 33.
  • the surface Sa side of the second wafer S which is the surface separated by the separation device 32, specifically, the surface of the laser absorption layer P is cleaned.
  • the back surface Sb of the second wafer S may be cleaned together with the front surface of the laser absorption layer P. Further, cleaning sections for cleaning the front surface of the laser absorption layer P and the back surface Sb of the second wafer S may be provided separately. Thereafter, the second wafer S that has been cleaned by the first cleaning device 33 is transferred to the cassette Cs of the cassette mounting table 11 by the wafer transfer device 22.
  • the laser beam L is irradiated from the back surface Wb side of the first wafer W to the polymerized wafer T held on the chuck 100 (step St11).
  • the laser beam L output from the lens 113 of the laser irradiation unit 110 passes through silicon (first wafer W) and is absorbed by the laser absorption layer P (step St12 in FIG. 7). ).
  • the laser light L absorbed by the laser absorption layer P is converted into heat according to its energy distribution (step St13 in FIG. 7).
  • absorption of the laser beam L causes the temperature of the laser absorption layer P to rise.
  • the temperature of the laser absorption layer P is highest in the area directly under the irradiation of the laser beam L.
  • most of the heat (Ht in the figure) generated in the laser absorption layer P due to absorption of the laser beam L is diffused toward the first wafer W (step St14 in FIG. 7). .
  • thermal diffusion from the laser absorption layer P increases the temperature at the interface between the laser absorption layer P and the first wafer W (silicon).
  • the influence of this heat that is, the increase in the interface temperature between the laser absorption layer P and the first wafer W causes the laser to deteriorate as shown in FIG.
  • the first wafer W in the portion irradiated with the light L expands locally (plastically deforms in a downwardly convex shape with respect to the laser absorption layer P side) according to its temperature distribution (step St15 in FIG. 7).
  • the area affected by the heat generated by the irradiation of the laser beam L may be referred to as the "irradiation area R" of the laser beam L.
  • the first wafer W locally expands in the irradiation area R of the laser beam L.
  • the laser absorption layer P is pressed from above (first wafer W side) due to the expansion of the first wafer W, and thereby, as shown in FIG.
  • a compressive stress ⁇ 1 is generated in the laser absorption layer P at the irradiation position of the laser beam L.
  • the generated compressive stress ⁇ 1 acts in the direction of peeling the first wafer W and the laser absorbing layer P (downward direction in the figure, toward the laser absorbing layer P side), causing the peeling.
  • a stress ⁇ 2 is generated.
  • the silicon (first wafer W) expands in the area immediately under the irradiation of the laser beam L (the central part of the irradiation area R), and compressive stress ⁇ 1 is generated.
  • a peeling stress ⁇ 2 which is a stress in the peeling direction caused by the compressive stress ⁇ 1, is generated at the end Re of the irradiation region R (see FIG. 9).
  • This peeling stress ⁇ 2 is a tensile stress generated at the end Re of the irradiation region R.
  • the generated compressive stress ⁇ 1 and peeling stress ⁇ 2 are accumulated inside the laser absorption layer P.
  • the peeling stresses ⁇ 2 generated in the plurality of irradiation areas R act synergistically (redundantly).
  • the stress ⁇ (compressive stress ⁇ 1 and peeling stress ⁇ 2) accumulated inside the laser absorbing layer P is released by peeling the first wafer W and the laser absorbing layer P.
  • the bonding strength is reduced on the entire surface of the first wafer W and the laser absorbing layer P.
  • the first wafer W and the laser absorption layer P can be appropriately separated in the separation device 32 (step St17 in FIG. 7).
  • the first wafer W in the central part of the irradiation area R (the area directly under the irradiation of the laser beam L), even after peeling occurs at the end Re of the irradiation area R, the first wafer W In some cases, the laser absorption layer P is maintained in a connected state (not peeled off). Therefore, in the wafer processing system 1 according to the technology of the present disclosure, in order to reliably separate the first wafer W from the polymerized wafer T (laser absorption layer P) in the polymerized wafer T after irradiation with the laser beam L, separation is performed. It is preferable to arrange a device 32 and provide a step of separating the first wafer W from the polymerized wafer T in the separation device 32.
  • the above-mentioned ideal state is achieved, that is, separation from the laser absorption layer P occurs on the entire surface of the first wafer W. If the stacked wafers T are transferred to the separation device 32 in a state where the wafers T are separated, there is a risk that the first wafers W may fall from the second wafers S due to inertia or the like accompanying this transfer. Furthermore, if separation from the laser absorption layer P occurs over the entire surface of the first wafer W, there is no need to transport the polymerized wafer T after irradiation with the laser beam L to the separation device 32.
  • the first wafer W is placed at the processing position A2.
  • the irradiation conditions (irradiation position, output, etc.) of the laser beam L are controlled so that at least a part of the interface between the wafer W of No. 1 and the laser absorption layer P remains connected (not separated). It is preferable. This prevents the first wafer W from being completely separated from the laser absorption layer P and scattering or falling from the second wafer S during irradiation with the laser beam L or during transportation to the separation device 32, etc. Ru.
  • the reduction in the bonding strength between the first wafer W and the laser absorption layer P at the processing position A2 of the laser irradiation device 31 is performed as described above. That is, in the present embodiment, the laser irradiation device 31 expands the first wafer W by the heat generated by the irradiation of the laser beam L, and generates compressive stress ⁇ 1 in the laser absorption layer P, so that the first wafer W and the laser beam are A peeling stress ⁇ 2 in the peeling direction is generated at the interface of the absorption layer P, which causes peeling at the interface between the first wafer W and the laser absorption layer P, thereby reducing the bonding strength.
  • the laser absorption layer P is irradiated with the laser beam L multiple times as shown in FIG.
  • the number of times of irradiation with the laser beam L until such peeling occurred is not limited to a plurality of times.
  • the peeling stress ⁇ 2 generated by a single irradiation of the laser beam L exceeds the adhesion force ⁇ of the end Re, the single irradiation of the laser beam L will cause the peeling stress ⁇ 2 to Peeling may occur at the interface between the first wafer W and the laser absorption layer P.
  • the regions in plan view of the polymerized wafer T are set as an outer peripheral region Z0, a first inner peripheral region Z1, a second inner peripheral region Z2, and a central region Z3.
  • Step St20 in FIG. 12 the operator sets the outer circumferential area Z0, the first inner circumferential area Z1, the second inner circumferential area Z2, and the center area Z3, and sets the outer circumferential area Z0, the first inner circumferential area Z1, and the The inner peripheral area Z2 and center area Z3 of No. 2 are stored in the control device 40.
  • the outer peripheral region Z0, the first inner peripheral region Z1, the second inner peripheral region Z2, and the center region Z3 are arranged in this order from the outside in the radial direction toward the inside. Further, the outer circumferential region Z0, the first inner circumferential region Z1, and the second inner circumferential region Z2 are arranged concentrically with the stacked wafer T, and the center region Z3 is arranged concentrically with the stacked wafer T.
  • the outer peripheral region Z0 is the peripheral region of the overlapping wafer T, where the first wafer W (surface film Fw) and the second wafer S (surface film Fs) are not bonded.
  • This region includes an unjoined region Q and a joined region B on the radially inner side of the unjoined region Q.
  • the unjoined region Q includes a chamfered portion (beveled portion) whose peripheral edge is chamfered.
  • the unbonded region Q also includes a region where the first wafer W and the second wafer S are not bonded, for example, due to positional deviation of bonding or other factors.
  • the first inner peripheral region Z1, the second inner peripheral region Z2, and the center region Z3 are regions arranged in the bonding region B of the first wafer W and the second wafer S, respectively.
  • the laser beam L is irradiated in a pulsed manner while moving the laser beam L in the radial direction.
  • the interval of irradiation of the laser beam L that is, the interval of the pulses constant.
  • the rotation speed of the superposed wafer T is increased as the laser beam L moves from the outside to the inside in the radial direction.
  • the rotational speed of the superposed wafer T reaches the upper limit, then, for example, as the laser light L moves from the outside to the inside in the radial direction, the frequency at which the laser light L is applied in a pulsed manner is decreased. Then, when the rotational speed of the polymerized wafer T reaches the upper limit and the frequency of the laser beam reaches the lower limit, the irradiation interval of the laser beam becomes smaller, for example, as the laser beam L moves from the outside to the inside in the radial direction. , the laser beams L may overlap in the central region of the overlapping wafer T.
  • the laser beam L is irradiated in the outer circumferential region Z0, the first inner circumferential region Z1, and the second inner circumferential region Z2 while rotating the polymerized wafer T.
  • the laser beam L is scanned while the rotation of the overlapping wafer T is stopped.
  • the frequency of the laser beam L is kept constant, and the rotation speed of the polymerized wafer T is varied as the laser beam L moves in the radial direction, so that the laser beam L is pulsed. irradiate. Specifically, when the laser beam L moves from the outside in the radial direction to the inside, the rotation speed of the polymerized wafer T is increased, and when the laser beam L moves from the inside in the radial direction to the outside, the rotation speed of the polymerized wafer T is increased. Slow down.
  • the laser beam L is irradiated in a pulsed manner by changing the frequency of the laser beam L as the laser beam L moves in the radial direction while keeping the rotational speed of the superposed wafer T constant. Specifically, when the laser beam L moves from the outside in the radial direction to the inside, the frequency of the laser beam L is decreased, and when the laser beam L moves from the inside in the radial direction to the outside, the frequency of the laser beam L is decreased. Enlarge.
  • boundary position between the first inner circumferential region Z1 and the second inner circumferential region Z2 is set at a position where the rotational speed of the stacked wafer T reaches its upper limit.
  • the boundary position between the second inner peripheral area Z2 and the center area Z3 is set at a position where the frequency of the laser beam L reaches the lower limit.
  • the laser absorption layer P is irradiated with laser light L.
  • the processing conditions of the laser processing are changed for each region Z0 to Z3.
  • the outer peripheral region Z0 is irradiated with the laser light L (step St21 in FIG. 12)
  • the second inner peripheral region Z2 is irradiated with the laser light L (step St22 in FIG. 12)
  • the first inner peripheral region Irradiation of laser light L to Z1 step St23 in FIG. 12
  • irradiation of laser light L to central region Z3 step St24 in FIG. 12
  • step St21 in the outer peripheral area Z0, as shown in FIG.
  • the laser beam L is irradiated in a pulsed manner while moving in the direction.
  • the laser beam L is fixed without scanning.
  • the laser light L is irradiated in a spiral shape from the inside in the radial direction to the outside. Further, due to the peeling mechanism between the first wafer W and the laser absorption layer P caused by the irradiation of the laser beam L described above, as shown in FIG. Peeling occurs.
  • the bonding strength between the first wafer W and the second wafer S that is, the bonding strength of the surface film Fw and the surface film Fs, at the boundary between the unbonded region Q and the bonded region B is Bonding strength is low.
  • the outer peripheral region Z0 is irradiated with the laser beam L, as shown in FIG. No peeling occurs between the wafer W and the laser absorption layer P. Then, the convex shape of the interface between the first wafer W and the laser absorption layer P is transmitted to the surface film Fw, and stress acts on the interface between the surface film Fw and the surface film Fs.
  • This stress may cause peeling at the interface between the surface film Fw and the surface film Fs, which have low bonding strength, at the boundary between the unbonded region Q and the bonded region B.
  • peeling tends to progress with the interface as the tip. That is, in the bonding region B of the outer peripheral region Z0, peeling may not occur at a desired interface between the first wafer W and the laser absorption layer P.
  • the laser beam L is irradiated from the inside in the radial direction to the outside in the outer peripheral region Z0. Then, as shown in FIG. 16, in the bonding region B, separation E1 occurs at the interface between the first wafer W and the laser absorption layer P. At this time, stress ⁇ is generated in each irradiation region R so that peeling E1 occurs from the center to the end Re.
  • the frequency of the laser beam L may be increased (the pitch of the laser beam L may be shortened), or the irradiation intensity of the laser beam L may be increased. It's okay.
  • step St22 in the second inner peripheral region Z2, the rotation mechanism 103 rotates the chuck 100 counterclockwise, and the movement mechanism 104 moves the chuck 100 in the positive direction of the Y axis.
  • the laser beam L is irradiated in a pulsed manner.
  • the laser beam L is fixed without scanning.
  • the laser light L is irradiated in a spiral manner from the inside in the radial direction to the outside.
  • peeling occurs at the interface between the first wafer W and the laser absorption layer P, as shown in FIG.
  • step St23 the first inner circumferential region Z1 is also irradiated with the laser beam L continuously to the second inner circumferential region Z2 in step St22, as shown in FIG. That is, while rotating the chuck 100 counterclockwise by the rotation mechanism 103 and moving the chuck 100 in the positive direction of the Y-axis by the moving mechanism 104, the laser beam L is irradiated in a pulsed manner. At this time, the laser beam L is fixed without scanning.
  • step St23 the laser light L is irradiated spirally from the inside in the radial direction to the outside in the first inner peripheral region Z1.
  • the spiral shape of the laser light L in the first inner peripheral region Z1 is continuous with the spiral shape of the laser light L in the second inner peripheral region Z2 and the spiral shape of the laser light L in the outer peripheral region Z0. That is, in the outer peripheral region Z0, the first inner peripheral region Z1, and the second inner peripheral region Z2, the rotation direction of the chuck 100 is the same counterclockwise, and the irradiation direction (moving direction) of the laser beam L is Since the spiral shape is the same from the inside to the outside in the radial direction, the spiral shape of the laser beam L is continuous.
  • step St23 peeling occurs at the interface between the first wafer W and the laser absorption layer P in the first inner peripheral region Z1.
  • the peeling at the interface between the first wafer W and the laser absorbing layer P in the first inner circumferential area Z1 is the same as the peeling at the interface between the first wafer W and the laser absorbing layer P in the second inner circumferential area Z2 and the peeling at the interface between the first wafer W and the laser absorbing layer P in the second inner circumferential area Z2. This is continuous with the peeling of the interface in region Z0.
  • the stress ⁇ accumulated inside the laser absorption layer P is smaller in the second inner circumferential region Z2 and the first inner circumferential region Z1 than in the outer circumferential region Z0.
  • the frequency of the laser beam L may be decreased (the pitch of the laser beam L may be lengthened), or the irradiation intensity of the laser beam L may be decreased. It's okay.
  • the pitch of the laser beam L is lengthened, the time required for laser processing can be shortened and the throughput can be improved. Further, when the irradiation intensity of the laser beam L is lowered, laser processing can be performed efficiently.
  • the second inner peripheral region Z2 and the first inner peripheral region Z1 a large stress ⁇ is generated so that the interface between the first wafer W and the laser absorption layer P is completely separated, and the stress ⁇ is If accumulated, there is a risk that the first wafer W may break. Therefore, as described above, in the second inner circumferential region Z2 and the first inner circumferential region Z1, at least a part of the interface between the first wafer W and the laser absorption layer P is separated while remaining connected. To suppress cracking of the wafer W of No. 1.
  • the above-mentioned “state in which the bonding force between the first wafer W and the laser absorption layer P is weak at the end Re” means that the bonding force between the first wafer W and the laser absorption layer P in the first inner peripheral region Z1 is The bonding force is such that when the peeling E3 at the interface is connected to the peeling E1 in the outer peripheral region Z0, the end portion Re peels off.
  • step St24 the rotation of the chuck 100 is stopped in the center region Z3. Then, the laser beam L is irradiated from the laser irradiation unit 110 in a pulsed manner. Further, the laser beam L is scanned in the central region Z3. At this time, as shown in FIG. 20, scanning irradiation of the laser beam L in the X-axis direction and movement of the chuck 100 (polymerized wafer T) in the Y-axis direction are alternately repeated. Alternatively, scanning irradiation of the laser beam L in the X-axis direction and movement of the chuck 100 in the Y-axis negative direction may be synchronized.
  • the laser beam L may be branched by the optical system 112 described above, and multiple points on the laser absorption layer P may be irradiated with the laser beam L at the same time. Furthermore, due to the mechanism of separation between the first wafer W and the laser absorption layer P caused by the irradiation of the laser beam L described above, separation occurs at the interface between the first wafer W and the laser absorption layer P in the central region Z3.
  • steps St20 to St24 separation can be caused at the interface between the first wafer W and the laser absorption layer P.
  • the first wafer W and the laser absorption layer P can be separated and the device layer Dw of the first wafer W can be transferred to the second wafer S.
  • step St21 in the outer peripheral region Z0, the laser light L is moved from the inside in the radial direction to the outside and irradiated, so that peeling can occur at the interface between the first wafer W and the laser absorption layer P. Then, the bonding strength at the interface between the first wafer W and the laser absorption layer P can be reduced, and the first wafer W and the laser absorption layer P can be separated.
  • step St22 and the first inner circumferential region Z1 of step St23 are continuously irradiated with the laser light L from the inside in the radial direction toward the outside, the first wafer W and Peeling at the interface of the laser absorption layer P can be appropriately connected.
  • At least a part of the interface between the first wafer W and the laser absorption layer P remains connected.
  • the condition is preferable. Therefore, at least a part of the interface between the first wafer W and the laser absorption layer P is maintained in a connected state in at least one of the first inner peripheral region Z1, the second inner peripheral region Z2, and the central region Z3. It is preferable to do so.
  • the processing conditions of the laser processing can be arbitrarily changed for each region Z0 to Z3.
  • the processing conditions include, for example, the rotation speed of the chuck 100, the frequency of the laser beam L, the rotation direction of the chuck 100, the processing order of the regions Z0 to Z3 (the irradiation order of the laser beam L), and the like.
  • the second inner region Z2 is irradiated with laser light L
  • the first inner region Z1 is irradiated with laser light L
  • the outer region Z0 is irradiated with laser light L
  • the center region Z3 is irradiated with laser light L.
  • the laser beam L may be irradiated in this order.
  • the chuck 100 is rotated counterclockwise by the rotating mechanism 103 in the second inner circumferential region Z2 and the first inner circumferential region Z1, similarly to steps St22 and St23.
  • the moving mechanism 104 moves the chuck 100 in the positive direction of the Y-axis, the laser beam L is irradiated in a pulsed manner.
  • the first wafer W and the laser absorption layer P are separated from each other at the edge Re, or the bonding force becomes weak. , the first wafer W and the laser absorption layer P are connected at the center. That is, in the second inner peripheral region Z2 and the first inner peripheral region Z1, the stress ⁇ accumulated inside the laser absorption layer P is reduced. If a large stress ⁇ is generated and accumulated as described above, there is a risk that the first wafer W may be broken. In this regard, cracking of the first wafer W can be suppressed by reducing the stress ⁇ as in this embodiment.
  • the above-mentioned “state in which the bonding force between the first wafer W and the laser absorption layer P is weak at the end Re” means that the bonding force between the first wafer W and the laser absorption layer P in the first inner peripheral region Z1 is The bonding force is such that when the peeling E3 at the interface is connected to the peeling E1 in the outer peripheral region Z0, the end portion Re peels off.
  • the rotating mechanism 103 rotates the chuck 100 counterclockwise, and the moving mechanism 104 rotates the chuck 100 in the Y-axis positive direction, similarly to step St21.
  • the laser beam L is irradiated in a pulsed manner.
  • a large stress ⁇ is generated in each irradiation region R so that peeling E1 occurs from the center to the end Re.
  • step St24 the laser beam L is scanned while the rotation of the chuck 100 is stopped. Then, in the central region Z3, separation occurs at the interface between the first wafer W and the laser absorption layer P.
  • the laser light L may be irradiated while moving from the outside in the radial direction to the inside in the first inner peripheral region Z1 and the second inner peripheral region Z2.
  • the outer circumferential region Z0 is irradiated with the laser beam L
  • the first inner circumferential region Z1 is irradiated with the laser beam L
  • the second inner circumferential region Z2 is irradiated with the laser beam L
  • the central region Z3 is irradiated with the laser beam L. Irradiation is performed in this order.
  • the rotating mechanism 103 rotates the chuck 100 counterclockwise, and the moving mechanism 104 moves the chuck 100 in the positive direction of the Y axis.
  • the laser beam L is irradiated in a pulsed manner while Then, in the outer circumferential region Z0, the laser light L is irradiated in a spiral manner from the inside in the radial direction to the outside.
  • a large stress ⁇ is generated in each irradiation region R so that peeling E1 occurs from the center to the end Re.
  • the rotating mechanism 103 rotates the chuck 100 clockwise, and the moving mechanism 104 moves the chuck 100 in the Y-axis negative direction. , irradiates the laser beam L in a pulsed manner. Then, in the first inner circumferential region Z1, the laser light L is irradiated in a spiral manner from the outside in the radial direction toward the inside.
  • the rotating direction of the chuck 100 is opposite to the adjacent outer circumferential region Z0 and the first inner circumferential region Z1, and the direction of irradiation of the laser beam L is also opposite.
  • the spiral shape of the laser beam L can be made continuous in the outer peripheral region Z0 and the first inner peripheral region Z1.
  • the spiral shape of the laser beam L can be made continuous by reversing the rotation direction of the chuck 100 in the adjacent regions.
  • the rotating mechanism 103 rotates the chuck 100 clockwise, and the moving mechanism 104 moves the chuck 100 in the Y-axis negative direction, while the laser beam L is pulsed. irradiate.
  • the laser light L is irradiated spirally from the outside in the radial direction toward the inside.
  • the magnitude of the stress ⁇ accumulated inside the laser absorption layer P is not limited.
  • the first inner peripheral region Z1 is irradiated with the laser light L
  • the separation of the interface between the first wafer W and the laser absorption layer P due to the laser light L leads to separation E1 in the outer peripheral region Z0. Therefore, in the first inner peripheral region Z1, the first wafer W and the laser absorption layer P are appropriately separated at the interface. This peeling is also transmitted to the second inner circumferential region Z2, and also in the second inner circumferential region Z2, proper peeling occurs at the interface between the first wafer W and the laser absorption layer P.
  • step St24 the laser beam L is scanned while the rotation of the chuck 100 is stopped. Then, in the central region Z3, separation occurs at the interface between the first wafer W and the laser absorption layer P.
  • the laser beam L may be irradiated in a pulsed manner by keeping the frequency of the laser beam L constant and varying the rotational speed of the overlapping wafer T as the laser beam L moves in the radial direction.
  • the laser light L may be irradiated in a pulsed manner by changing the frequency of the laser light L as the laser light L moves in the radial direction while keeping the rotational speed of the superposed wafer T constant.
  • the processing conditions are controlled so that the irradiation interval of the laser beam L is constant in the inner peripheral region.
  • the chuck 100 when performing laser processing, the chuck 100 was moved horizontally, but the lens 113 of the laser irradiation unit 110 may be moved horizontally, or both the chuck 100 and the lens 113 may be moved horizontally. It may be moved in the direction. By relatively moving the chuck 100 and the lens 113 in the horizontal direction, laser processing using the laser beam L can be performed.
  • the center region Z3 is scanned and irradiated with the laser beam L while the rotation of the chuck 100 is stopped in step St24, but as shown in FIG.
  • the laser beam L may be scanned and irradiated from the irradiation unit 110.
  • the rotational speed of the chuck 100 in the center region Z3 may be lower than in the outer peripheral region Z0, the first inner peripheral region Z1, and the second inner peripheral region Z2.
  • the laser beam L is irradiated spirally in the outer circumferential region Z0, the first inner circumferential region Z1, and the second inner circumferential region Z2, but it may be irradiated concentrically and annularly. Further, in the embodiment shown in FIG. 23, the laser beam L is irradiated spirally in the center region Z3 as well, but it may be irradiated concentrically and annularly.
  • peeling was caused at the interface between the first wafer W and the laser absorption layer P, as shown in FIGS. 8 to 11.
  • a peel-promoting film may be formed on the surface Wa of the first wafer W to appropriately peel the first wafer W and the laser absorption layer P; Peeling may occur at the interface between the film and the laser absorption layer P.
  • a peeling promoting film Pe on the surface Wa of the first wafer W, a peeling promoting film Pe, a laser absorption layer P, a device layer Dw, and a surface film Fw as a laminated film are formed in this order. It can be formed by laminating.
  • the peeling promoting film Pe is formed to facilitate peeling of the first wafer W from the second wafer S, and its adhesion with the first wafer W (silicon) is higher than that with the laser absorption layer P. It is formed of a material that is lower in transparency than the laser beam L and is transparent to the laser beam L, such as silicon nitride (SiN).
  • the laser absorption layer P is irradiated with the laser light L (step St31 in FIG. 25).
  • the laser beam L passes through the first wafer W and the peeling promoting film Pe, and is absorbed by the laser absorption layer P (Step St32 in FIG. 25).
  • the laser light L absorbed by the laser absorption layer P is converted into heat according to its energy distribution (step St33 in FIG. 25), thereby increasing the temperature of the laser absorption layer P.
  • Most of the heat generated in the laser absorption layer P due to the absorption of the laser beam L is diffused to the peeling promotion film Pe on the first wafer W side (step St34 in FIG. 25), and this thermal diffusion causes the laser absorption
  • the temperature at the interface between the layer P and the peel promoting film Pe increases.
  • the influence of this heat causes a phenomenon as shown in FIG. 24(b).
  • the peeling promoting film Pe expands locally according to its temperature distribution (step St35 in FIG. 25).
  • the thermal influence at the interface between the laser absorption layer P and the peel-off promoting film Pe may affect the first wafer W, and as shown in FIG. 24(b), the first wafer W also responds to the temperature distribution. It may also expand locally.
  • the peeling promoting film Pe is formed on the surface Wa of the first wafer W, and the adhesion with the first wafer W (silicon) is lower than the adhesion with the laser absorption layer P.
  • the peel-off promoting film Pe is formed at the interface between the first wafer W and the laser absorption layer P, but for example, the peel-off promoting film Pe is formed at the interface between the laser absorbing layer P and the device layer Dw.
  • the peeling promoting film Pe may be left on the second wafer S side to which the device layer Dw is transferred.
  • Laser irradiation device 40 Control device 100 Chuck 103 Rotation mechanism 104 Movement mechanism 110 Laser irradiation section L Laser light P Laser absorption layer S Second wafer T Polymerized wafer W First wafer

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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
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JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2021192853A1 (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
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JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2021192853A1 (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
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