WO2024032332A1 - Appareil et procédé d'étirage de tige de silicium monocristallin, échangeur de chaleur et ensemble d'échange de chaleur - Google Patents

Appareil et procédé d'étirage de tige de silicium monocristallin, échangeur de chaleur et ensemble d'échange de chaleur Download PDF

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Publication number
WO2024032332A1
WO2024032332A1 PCT/CN2023/107981 CN2023107981W WO2024032332A1 WO 2024032332 A1 WO2024032332 A1 WO 2024032332A1 CN 2023107981 W CN2023107981 W CN 2023107981W WO 2024032332 A1 WO2024032332 A1 WO 2024032332A1
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WO
WIPO (PCT)
Prior art keywords
heat transfer
single crystal
silicon rod
crystal silicon
transfer component
Prior art date
Application number
PCT/CN2023/107981
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English (en)
Chinese (zh)
Inventor
邓浩
文永飞
马少林
周锐
李侨
丁彪
Original Assignee
隆基绿能科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202210952526.4A external-priority patent/CN117628962A/zh
Priority claimed from CN202210946878.9A external-priority patent/CN117626404A/zh
Application filed by 隆基绿能科技股份有限公司 filed Critical 隆基绿能科技股份有限公司
Publication of WO2024032332A1 publication Critical patent/WO2024032332A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • This application relates to the field of photovoltaic technology, and specifically to a single crystal silicon rod drawing device, a single crystal silicon rod drawing method, a heat exchanger and a heat exchange component.
  • Monocrystalline silicon wafer As a basic material for photovoltaic power generation, monocrystalline silicon wafer has extensive market demand. Monocrystalline silicon wafers are usually obtained by slicing monocrystalline silicon rods, which can be grown and drawn from silicon materials.
  • the manufacturing industry of single crystal silicon rods is developing in the direction of large thermal field, large charge, large size and high drawing speed.
  • the most effective way to reduce the production cost of single crystal silicon rod drawing is to increase the crystal growth rate.
  • the existing conventional method is to design a water-cooled heat transfer component near the inner liner of the heat shield, and radiate the latent heat energy released during crystallization to the inner wall of the water-cooled heat transfer component and out of the furnace through radiation heat transfer, thereby increasing the crystal growth rate.
  • This application aims to provide a single crystal silicon rod drawing device, a single crystal silicon rod drawing method, a heat exchanger and a heat exchange component to solve the problem of low efficiency and high production cost of existing single crystal silicon rod drawing. high problem.
  • this application discloses a single crystal silicon rod drawing device.
  • the single crystal silicon rod drawing device includes:
  • the crucible is arranged in the main furnace body and is used to accommodate silicon material;
  • a heater which is provided in the main furnace body and is used to heat the silicon material in the crucible into silicon liquid to grow single crystal silicon rods from the silicon liquid;
  • the heat transfer component is arranged in the single crystal silicon rod drawing device, and the heat transfer component at least partially contacts the single crystal silicon rod when the single crystal silicon rod passes to conduct conduction. The heat of the single crystal silicon rod.
  • the heat transfer assembly includes a plurality of heat transfer bodies, and an air blowing mechanism is also provided in the heat transfer assembly.
  • the air blowing mechanism is used to blow the heat transfer body so that the heat transfer body It contacts the single crystal silicon rod and takes away the heat inside the heat transfer component.
  • the blowing mechanism includes a first air duct provided in the heat transfer component, and the first air duct is used to introduce gas;
  • the heat transfer body is provided with a hollow cavity extending along its axial direction;
  • the first air duct is connected to the hollow cavity to blow the gas in the first air duct into the hollow cavity.
  • the blowing mechanism includes a second air duct and a blowing port provided in the heat transfer component.
  • One end of the blowing port is connected to the second air duct, and the other end runs through the heat transfer component.
  • the inner wall is arranged toward the gap between the heat transfer bodies;
  • the second air channel is used to introduce gas and blow the gas out through the blowing port.
  • the blowing structure further includes: a first ventilation structure and a second ventilation structure, both of the first ventilation structure and the second ventilation structure are arranged on the top of the main furnace body; wherein,
  • the first ventilation structure is used to introduce the first working gas into the main furnace body
  • the second ventilation structure is used to introduce the first working gas into the main furnace during the temperature adjustment stage of the single crystal silicon rod to the finishing stage.
  • a second working gas is introduced into the body, and the specific heat of the second working gas is greater than the specific heat of the first working gas.
  • first ventilation structure and the second ventilation structure are an integral structure, or the first ventilation structure and the second ventilation structure are a separate structure.
  • the single crystal silicon rod drawing device further includes: a heat screen, the heat screen is arranged in the main furnace body and located above the crucible;
  • the heat shield is set outside the single crystal silicon rod and has a gap between it and the single crystal silicon rod;
  • the heat transfer component is connected between the heat shield and the single crystal silicon rod.
  • a auxiliary furnace body is also provided on the top of the main furnace body, the auxiliary furnace body is internally connected with the main furnace body, and the single crystal silicon rod at least partially extends into the auxiliary furnace body;
  • the heat transfer component is at least partially disposed in the main furnace body and sleeved outside the single crystal silicon rod.
  • the heat transfer component includes a plurality of heat transfer bodies, the heat transfer bodies are bonded to the inner wall of the heat transfer component through thermal conductive glue, and/or the heat transfer body is snap-fitted to the heat transfer body.
  • the inner wall of the thermal component, and/or the heat transfer body is connected to the inner wall of the heat transfer component through fasteners.
  • the material of the heat transfer body includes: one or a mixture of carbon fiber, graphene fiber, and metal fiber.
  • this application also discloses a method for drawing single crystal silicon rods.
  • the method for drawing single crystal silicon rods includes:
  • a main furnace body which is equipped with a crucible, a heater and a heat transfer component, and the crucible contains silicon material;
  • the heat transfer component includes a plurality of heat transfer bodies, and a blowing mechanism is also provided in the heat transfer component to pull crystals from the silicon liquid in the inner crucible to obtain single crystal silicon rods. steps, also include:
  • the air blowing mechanism is used to blow the heat transfer body so that the heat transfer body contacts the single crystal silicon rod and takes away the heat inside the heat transfer component.
  • the air blowing mechanism includes a first ventilation structure and a second ventilation structure, and the air blowing mechanism is used to blow the heat transfer body so that the heat transfer body contacts the single crystal silicon rod.
  • the steps of taking away the heat inside the heat transfer component include:
  • the first ventilation structure introduces the first working gas into the main furnace body
  • the second ventilation structure introduces a second working gas into the main furnace body, and the specific heat of the second working gas is greater than the specific heat of the first working gas.
  • the application discloses a heat exchanger.
  • the heat exchanger includes: an annular body, and a crystal pulling channel for the penetration of single crystal silicon rods is provided in the annular body; wherein,
  • the inner wall of the annular body is provided with a plurality of heat transfer components extending toward the center.
  • the heat transfer components are at least partially in contact with the single crystal silicon rod when the single crystal silicon rod passes to conduct the single crystal silicon rod. The heat of the silicon rod;
  • a water inlet pipe and a water outlet pipe are respectively connected to the annular body.
  • a first groove is provided on the inner wall of the annular body, and one end of the heat transfer component is bonded to the first groove through thermally conductive glue, and/or one end of the heat transfer component is connected to the first groove.
  • the first groove has an interference fit.
  • the inner wall of the annular body is provided with a second groove
  • the heat exchanger also includes a first fixed plate, a third groove is provided on the first fixed plate, and the heat transfer component is connected to the third groove;
  • the first fixing plate is embedded in the second groove and connected to the second groove.
  • one end of the heat transfer component is bonded to the third groove through a thermally conductive adhesive layer, Alternatively, one end of the heat transfer component is clamped in the third groove.
  • the middle part of the heat transfer component is embedded in the third groove, and both ends of the heat transfer component extend toward the crystal pulling channel respectively;
  • the heat exchanger also includes a second fixing plate and a first fastener.
  • the second fixing plate is embedded in the third groove to press the middle part of the heat transfer component to the In the third groove, the first fastener is connected to the second fixing plate and the first fixing plate respectively to fix the second fixing plate to the first fixing plate.
  • the first fixing plate is bonded to the second groove through thermally conductive glue, and/or the first fixing plate is connected to the second groove through a second fastener.
  • the annular body includes an annular shell, the shell includes an inner wall and an outer wall arranged oppositely, and the inner wall and the outer wall enclose a first water cooling channel;
  • the first water-cooling channel is spirally distributed in the housing.
  • a first water inlet is provided at the bottom of the first water-cooling channel.
  • the first water inlet is connected to the water inlet pipe.
  • a first water outlet is provided at the top, and the first water outlet is connected to the water outlet pipe.
  • the water inlet pipe is annular, the water outlet pipe is annular, and the water outlet pipe is spaced apart from and coaxially arranged with the water inlet pipe;
  • the annular body includes a plurality of cooling pipes, one end of each cooling pipe is connected to the water inlet pipe, and the other end is connected to the water outlet pipe, so that the cooling pipes are connected to the water inlet pipe and the water outlet pipe respectively.
  • the water outlet pipes are connected, and the plurality of cooling pipes are enclosed to form the crystal pulling channel;
  • the side of the cooling tube facing the crystal pulling channel is inside, and a plurality of the heat transfer components are provided on the inside, and the heat transfer components extend towards the center of the crystal pulling channel, and the heat transfer components The component is at least partially in contact with the single crystal silicon rod when the single crystal silicon rod passes, so as to conduct the heat of the single crystal silicon rod to the cooling tube.
  • a fourth groove extending along the length direction of the cooling pipe is provided inside the cooling pipe, and at least part of the heat transfer component is embedded in the fourth groove.
  • the fourth groove includes a groove bottom and two grooves connected to the groove bottom. wall, one end of the heat transfer component is embedded between the two groove walls, and the other end of the heat transfer component extends toward the crystal pulling channel;
  • the heat exchanger further includes a third fastener, which is respectively connected to the two groove walls to clamp the heat transfer component through the two groove walls.
  • the middle part of the heat transfer component is embedded in the fourth groove, and both ends of the heat transfer component extend toward the crystal pulling channel respectively;
  • the heat exchanger also includes a third fixing plate and a fourth fastener.
  • the third fixing plate is embedded in the fourth groove to press the middle part of the heat transfer component to the In the fourth groove, the fourth fastener is connected to the third fixing plate and the cooling pipe respectively to fix the third fixing plate to the cooling pipe.
  • the side away from the crystal pulling channel is the outer side
  • the two side walls between the outer side and the inner side are the first side walls
  • one end of the heat transfer component is connected to The other end of the first side wall and the heat transfer component extends toward the crystal pulling channel;
  • the heat exchanger also includes a fourth fixing plate and a fifth fastener.
  • the fourth fixing plate is disposed on a side of the heat transfer component away from the first side wall.
  • the fifth fastener Connected to the fourth fixing plate and the first side wall respectively to clamp the heat transfer component between the fourth fixing plate and the first side wall.
  • the fourth fixed plate includes a fitting plate and a resisting plate connected to the fitting plate, and the fitting plate and the resisting plate are arranged at a preset angle;
  • the fitting plate is disposed on a side of the heat transfer component away from the first side wall, and is connected to the first side wall through the fifth fastener, and the resisting plate is close to the cooling
  • the outer side of the tube resists the first side wall, and the resisting plate, the fitting plate and the first side wall enclose a space for accommodating one end of the heat transfer component.
  • the heat exchanger further includes a clamping member, the clamping member is provided with a fifth groove;
  • the middle part of the heat transfer component is embedded in the fifth groove and connected with the fifth groove, and both ends of the heat transfer component extend toward the crystal pulling channel;
  • the fifth groove of the clamping member is clamped outside the cooling pipe, so that the fifth groove The heat transfer component inside is fit with the cooling tube.
  • the heat exchanger further includes a sixth fastener, which is connected to the clamping member and the cooling pipe respectively to connect the clamping member to the cooling pipe.
  • a sixth fastener which is connected to the clamping member and the cooling pipe respectively to connect the clamping member to the cooling pipe.
  • the water inlet pipe is provided with a plurality of first openings facing the water outlet pipe, and the plurality of first openings are arranged at intervals along the circumference of the water inlet pipe;
  • the water outlet pipe is provided with a plurality of second openings, the plurality of second openings are arranged at intervals along the circumferential direction of the water outlet pipe, and the second openings correspond to the first openings;
  • One end of the cooling tube is connected to the first opening, and the other end of the cooling tube is connected to the corresponding second opening.
  • the material of the heat transfer component includes: one or a mixture of carbon fiber, graphene fiber, and metal fiber.
  • this application also discloses a heat exchange assembly, which includes: a heat shield and the heat exchanger described in any one of the above; wherein the heat shield is sleeved on the heat exchanger. outside.
  • the heat transfer component can be disposed in the single crystal silicon rod drawing device, the heat transfer component can at least partially contact the single crystal silicon rod when the single crystal silicon rod passes, so as to draw the single crystal silicon rod.
  • the heat of the single crystal silicon rod is quickly conducted to the heat transfer component through contact conduction. In this way, the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.
  • Figure 1 is a single crystal silicon rod drawing device described in the embodiment of the present application.
  • FIG 2 is a schematic structural diagram of the heat transfer component and the silicon rod in the single crystal silicon rod drawing device shown in Figure 1;
  • Figure 3 is a schematic structural diagram of another single crystal silicon rod drawing device according to the embodiment of the present application.
  • Figure 4 is a detailed structural diagram of position A of the single crystal silicon rod drawing device shown in Figure 3;
  • Figure 5 is a schematic cross-sectional structural diagram of a heat transfer component according to the embodiment of the present application.
  • Figure 6 is one of the structural schematic diagrams of the position B of the heat transfer component shown in Figure 5;
  • Figure 7 is the second structural schematic diagram of position B of the heat transfer component shown in Figure 5;
  • FIG 8 is a schematic structural diagram of the heat transfer component in the crystal silicon rod pulling device shown in Figure 3;
  • Figure 9 is a schematic structural diagram of position C of the heat transfer component shown in Figure 8.
  • Figure 10 is a step flow chart of a single crystal silicon rod drawing method according to the embodiment of the present application.
  • FIG 11 is a schematic structural diagram of a heat exchanger according to the embodiment of the present application.
  • FIG 12 is a top structural schematic diagram of the heat exchanger shown in Figure 11;
  • Figure 13 is a schematic cross-sectional structural view of the heat exchanger shown in Figure 11;
  • Figure 14 is a schematic structural diagram of a first fixing plate according to the embodiment of the present application.
  • Figure 15 is one of the enlarged structural schematic diagrams of the position of the first fixing plate M shown in Figure 14;
  • Figure 16 is the second enlarged structural schematic diagram of the position of the first fixing plate M shown in Figure 14;
  • Figure 17 is a schematic structural diagram of another first fixing plate according to the embodiment of the present application.
  • Figure 18 is a schematic structural diagram of the N position of the first fixing plate shown in Figure 17;
  • FIG. 19 is a schematic structural diagram of another heat exchanger according to the embodiment of the present application.
  • Figure 20 is a schematic structural diagram of the water inlet pipe of the heat exchanger shown in Figure 19;
  • Figure 21 is a schematic structural diagram of the water outlet pipe of the heat exchanger shown in Figure 19;
  • Figure 22 is a schematic structural diagram of the cooling tube of the heat exchanger described in Figure 19;
  • Figure 23 is a schematic structural diagram of a cooling pipe according to an embodiment of the present application.
  • Figure 24 is a schematic top structural view of the cooling tube shown in Figure 23;
  • FIG. 25 is a schematic structural diagram of another cooling pipe according to the embodiment of the present application.
  • Figure 26 is a schematic structural diagram of the position of cooling pipe Q shown in Figure 25;
  • Figure 27 is a schematic top structural view of the cooling pipe shown in Figure 25;
  • Figure 28 is a schematic structural diagram of yet another cooling pipe according to the embodiment of the present application.
  • Figure 29 is a schematic structural diagram of the position of the cooling pipe P shown in Figure 28;
  • Figure 30 is a schematic top structural view of the cooling tube shown in Figure 28;
  • Figure 31 is a schematic structural view of the second fixing plate on the cooling pipe shown in Figure 28;
  • Figure 32 is a schematic structural diagram of the position of the second fixing plate D shown in Figure 31;
  • Figure 33 is a schematic structural diagram of another cooling pipe according to the embodiment of the present application.
  • Figure 34 is a schematic structural diagram of the position of the cooling pipe E shown in Figure 33;
  • Figure 35 is a schematic top structural view of the cooling pipe shown in Figure 33;
  • Figure 36 is a schematic structural diagram of the clamping member in the cooling pipe shown in Figure 33;
  • Fig. 37 is a schematic top structural view of the clamping member shown in Fig. 36.
  • 10-main furnace body 11-crucible, 12-heater, 13-heat transfer component, 131-heat transfer body, 132-water cooling channel, 133-water inlet pipe, 134-water outlet pipe, 135-first air duct, 136 - Hollow cavity, 137 - second air duct, 138 - blowing port, 14 - first ventilation structure, 15 - heat screen, 16 - auxiliary furnace body, 20 - single crystal silicon rod;
  • This application aims to provide a single crystal silicon rod drawing device and a single crystal silicon rod drawing method to solve the existing problems of low efficiency and high production cost of single crystal silicon rod drawing.
  • first and second features in the description and claims of this application may include one or more of these features, either explicitly or implicitly.
  • plural means two or more.
  • and/or in the description and claims indicates at least one of the connected objects, and the character “/” generally indicates that the related objects are in an “or” relationship.
  • connection should be understood in a broad sense.
  • connection or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be an internal connection between two components.
  • connection or integral connection
  • connection or integral connection
  • connection can be a mechanical connection or an electrical connection
  • it can be a direct connection or an indirect connection through an intermediate medium
  • it can be an internal connection between two components.
  • specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
  • FIG. 1 a single crystal silicon rod drawing device according to the embodiment of the present application is shown.
  • FIG 2 a heat transfer component and silicon in the single crystal silicon rod drawing device shown in Figure 1 are shown.
  • a schematic structural diagram of the rod Refer to Figure 3, which shows a schematic structural diagram of another single crystal silicon rod drawing device described in the embodiment of the present application.
  • FIG. 4 a detailed structural diagram of position A of the single crystal silicon rod drawing device shown in Fig. 3 is shown.
  • the single crystal silicon rod drawing device may specifically include: a main furnace body 10; a crucible 11.
  • the crucible 11 is provided in the main furnace body 10 for containing silicon material; a heater 12,
  • the heater 12 is provided in the main furnace body 10 and is used to heat the silicon material in the crucible 11 into silicon liquid to grow single crystal silicon rods 20 from the silicon liquid; and the heat transfer component 13 is provided.
  • the heat transfer component 13 is at least partially in contact with the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, so as to conduct the heat of the single crystal silicon rod 20 .
  • the heat transfer component 13 can be disposed in the single crystal silicon rod drawing device, the heat transfer component 13 at least partially contacts the single crystal silicon rod 20 when the single crystal silicon rod 20 passes, so as to draw the single crystal silicon rod 20 .
  • the heat of the crystalline silicon rod 20 is quickly conducted to the heat transfer component 13 through contact conduction. In this way, the longitudinal temperature gradient of the single crystal silicon rod 20 can be increased and the crystal growth rate of the single crystal silicon rod 20 can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod 20 and reducing the production cost of the single crystal silicon rod 20 .
  • the single crystal silicon rod drawing device may be a single crystal furnace.
  • the main furnace body 10 can accommodate and fix the crucible 11, the heater 12, the heat transfer component 13, etc.
  • the crucible 11 can be a single crucible, a double crucible, etc., and the crucible 11 can be used to accommodate silicon material.
  • a single crystal silicon rod 20 can be grown at the single crystal growth interface of the silicon liquid.
  • the heater 12 can be used to heat the crucible 11 to melt the silicon material in the crucible 11 into silicon liquid, and to keep the silicon liquid at a suitable temperature during the drawing process of the single crystal silicon rod 20 .
  • the heater 12 may be disposed at the bottom of the crucible 11 to heat the crucible 11 from the bottom of the crucible 11 , and/or the heater 12 may be disposed at the side of the crucible 11 to heat the crucible 11 from the side of the crucible 11 .
  • FIG. 1 and FIG. 3 only show the case where the heater 12 is provided on both the bottom and the side of the crucible 11 , and other cases can be implemented as follows.
  • the heat transfer component 13 is roughly cylindrical and can be arranged in a single crystal silicon rod drawing device.
  • the single crystal silicon rod passes through, it is placed outside the single crystal silicon rod 20 and the heat transfer component 13 can absorb the single crystal silicon rod. 20 radiates heat during crystallization and transfers the absorbed heat to the outside of the main furnace body 10, thereby improving the single crystal
  • the longitudinal temperature gradient of the silicon rod 20 increases the crystal growth rate of the single crystal silicon rod 20 .
  • the heat transfer component 13 can be any one of a water-cooled heat transfer component or an air-cooled heat transfer component. The embodiment of the present application does not limit the specific type of the heat transfer component 13 .
  • a plurality of heat transfer bodies 131 extending toward the center may be provided on the inner wall of the heat transfer component 13.
  • the heat transfer bodies 131 are at least partially in contact with the single crystal silicon rod 20. Therefore, when the single crystal silicon rod 20 crystallizes, The generated heat is quickly transferred to the heat transfer component 13 through the heat transfer body 131, and is quickly transferred to the outside of the main furnace body 10 through the heat transfer component 13. The heat generated by the single crystal silicon rod 20 is taken away faster.
  • the longitudinal temperature gradient at the single crystal growth interface can be greatly improved.
  • the growth speed can also be greatly improved, thus the pulling speed of the single crystal silicon rod 20 can be increased, and thus the drawing efficiency of the single crystal silicon rod 20 can be increased.
  • thermodynamic model used to calculate the pulling speed of the single crystal silicon rod 20 is shown below:
  • Vmax (Ks ⁇ dTs/dz-J1 ⁇ dT1/dz/( ⁇ s ⁇ L) (Formula 1)
  • dTl/dz represents the temperature gradient of the silicon liquid.
  • ⁇ s represents the density of silicon (g/cm 3 )
  • Ks represents the thermal conductivity coefficient (J/(K ⁇ cm ⁇ s))
  • the thermal conductivity here refers to the thermal conductivity of single crystal silicon rod, which is a physical constant.
  • L represents the latent heat of crystallization of silicon (J/g)
  • dTs/dz represents the temperature gradient of the single crystal growth interface (K /cm)
  • Vmax represents the maximum pulling speed of the single crystal silicon rod 20.
  • the single crystal silicon rod drawing device may also include: a first ventilation structure 14 and a second ventilation structure (not shown in the figure).
  • the first ventilation structure 14 and the second ventilation structure are both arranged on The top of the main furnace body 10 or the top of the heat transfer component 13 (not shown in the figure); wherein, the first ventilation structure 14 can be used to pass the first working gas into the main furnace body 10, and the second ventilation structure
  • the structure can be used to introduce a second working gas into the main furnace body 10 from the temperature adjustment stage of the single crystal silicon rod 20 to the finishing stage.
  • the specific heat of the second working gas is greater than the specific heat of the first working gas. hot.
  • the first working gas may be a conventional protective gas such as argon.
  • the second working gas may be nitrogen, hydrogen, helium, methane, ethane, acetylene, ethylene, n-butane and other high specific heat gases with a specific heat greater than that of argon. Since the specific heat of the second working gas is greater than the specific heat of the first working gas, when the second working gas is introduced into the main furnace body 10, the inside of the main furnace body 10 can be lifted. The thermal conductivity of the single crystal silicon rod 20 is increased, thereby increasing the drawing speed of the single crystal silicon rod 20 .
  • the drawing process of the single crystal silicon rod 20 may include the steps of feeding ⁇ melting ⁇ temperature adjustment-seeding growth-shoulder growth-equal diameter growth ⁇ finishing.
  • the first working gas can be introduced into the main furnace body 10 through the first ventilation structure 14 to perform relevant operations in the atmosphere of the first working gas.
  • the second working gas can be introduced into the main furnace body 10 through the second ventilation structure. Since the specific heat of the second working gas is greater than the specific heat of the first working gas, , starting from the temperature adjustment stage, the thermal conductivity coefficient of the single crystal silicon rod 20 in the main furnace body 10 is relatively large, which is beneficial to increasing the drawing speed of the single crystal silicon rod 20.
  • the cost of the second working gas with higher specific heat is greater than the cost of the first working gas with lower specific heat.
  • the heat transfer coefficient in the main furnace body 10 Only then can the pulling speed of the single crystal silicon rod 20 be affected. Therefore, by introducing the lower-cost first working gas before the temperature adjustment stage, the higher-cost second working gas is introduced only after the temperature adjustment begins. body to increase the heat conduction coefficient within the main furnace body 10, thereby increasing the pulling speed of the single crystal silicon rod 20 while also reducing the cost of gas.
  • the thermal conductivity coefficient in the main furnace body 10 has an increasing influence on the pulling speed of the single crystal silicon rod 20.
  • the effect of the equal-diameter growth stage can be increased after the equal-diameter growth stage begins.
  • the second working gas is introduced into the main furnace body 10 through the second ventilation structure, which is not limited in the embodiment of the present application.
  • a mixed gas of the first working gas and the second working gas may be formed in the main furnace body 10, and the ratio of the two The range can be 0:1-1:0.
  • the embodiment of the present application does not specifically limit the ratio of the first working gas and the second working gas.
  • the inlet flow rate of the first working gas and the second working gas may be 10-500L/min. In the embodiment of the present application, the inlet flow rate of the first working gas and the second working gas may be No restrictions.
  • the first ventilation structure 14 and the second ventilation structure are an integrated structure, so as to realize the sharing of the first ventilation structure 14 and the second ventilation structure and reduce the problems of the ventilation structure in the single crystal silicon rod drawing device. quantity, simplifying the structure of the single crystal silicon rod drawing device.
  • the first ventilation structure 14 and the second ventilation structure are separate structures, so that an independent first ventilation structure 14 can be used to individually control the introduction of the first working gas, and an independent second ventilation structure can be used to individually control the introduction of the first working gas.
  • the introduction of the second working gas makes the specific structure and control logic of the first ventilation structure 14 and the second ventilation structure relatively simple.
  • the heat transfer body 131 can be bristles, fibers, etc.
  • the heat transfer body 131 can be made of fibers with high thermal conductivity. In this way, when the heat transfer body 131 is in contact with the single crystal silicon rod 20, the heat transfer from the single crystal silicon rod 20 through the heat transfer body 131 can be further accelerated. Component 13 speed.
  • the material of the heat transfer body 131 may include but is not limited to any one or a mixture of carbon fibers, graphene fibers, and metal fibers. The embodiments of this application may not limit the specific material of the heat transfer body 131. .
  • the contact distance between the heat transfer body and the single crystal silicon rod 20 may be 0-50 mm, so that the heat transfer body can fully contact the single crystal silicon rod 20 to facilitate Place
  • the heat transfer body quickly conducts the heat of the single crystal silicon rod 20 to the heat transfer component 13 .
  • the diameter of a single heat transfer body 131 may be 0.1-10 mm. The embodiment of the present application does not specifically limit the contact distance between the heat transfer body 131 and the single crystal silicon rod 20 and the diameter of the heat transfer body 131 .
  • one end of the heat transfer body 131 connected to the heat transfer component 13 can be carbonized hard fiber, so that the heat transfer body 131 can be reliably connected to the heat transfer component 13 .
  • One end of the heat transfer body 131 in contact with the single crystal silicon rod 20 can be a soft fiber to achieve flexible contact between the heat transfer body 131 and the single crystal silicon rod 20 to prevent the heat transfer body 131 from affecting the single crystal silicon rod 20 Surface quality and crystal pulling stability.
  • the heat transfer body 131 may also be made entirely of carbonized hard fibers, or entirely made of soft fibers, which is not limited in the embodiments of the present application.
  • the heat transfer body 131 can be bonded to the inner wall of the heat transfer component 13 through thermally conductive glue, and/or the heat transfer body 131 can be clamped to the inner wall of the heat transfer component 13, and/or the heat transfer body 131 can be tightened through a tight seal.
  • the firmware is connected to the inner wall of the heat transfer component 13 .
  • the embodiment of the present application does not limit the connection method between the heat transfer body 131 and the heat transfer component 13 .
  • a blowing mechanism is also provided in the heat transfer component 13 , and the blowing mechanism can be used to blow the heat transfer body 131 so that the heat transfer body 131 is in contact with the single crystal silicon rod 20 And take away the heat inside the heat transfer component 13.
  • the blowing mechanism can be used to blow the heat transfer body 131 so that the heat transfer body 131 is in contact with the single crystal silicon rod 20 And take away the heat inside the heat transfer component 13.
  • the gas convection inside the heat transfer component 13 can be accelerated and the heat inside the heat transfer component 13 can be taken away as quickly as possible; on the other hand, due to The hardness of the heat transfer body 131 is relatively soft, and it is likely that the heat transfer body 131 will collapse and be unable to contact the single crystal silicon rod 20.
  • the heat transfer body 131 can be The heat transfer body 131 is kept in an upright state and fully contacts the single crystal silicon rod 20 for heat conduction, thereby increasing the drawing speed of the single crystal silicon rod 20 .
  • the following shows the heat transfer efficiency improvement and crystal pulling speed corresponding to different heat dissipation methods.
  • Solution 1 in Table 1 is a traditional heat dissipation method, that is, no heat transfer body 131 is provided on the inner wall of the heat transfer component 13, and no air blowing mechanism is provided inside the heat transfer component 13 to accelerate the convection of the internal gas of the heat transfer component 13.
  • the latent heat of crystallization of the single crystal silicon rod 20 is dissipated by radiation only through the heat transfer component 13.
  • the single crystal silicon rod The heat transfer efficiency of 20 is low, and accordingly, the drawing speed of the single crystal silicon rod 20 is also low (1.7mm/min).
  • Scheme 2 of Table 1 has a new blowing mechanism inside the heat transfer component 13, and the gas introduced into the blowing mechanism is traditional argon gas.
  • the latent heat of crystallization of the single crystal silicon rod 20 can be dissipated by radiation through the heat transfer component 13; on the other hand, the blowing mechanism can be used to pass argon gas into the inside of the heat transfer component 13.
  • the argon gas can form high-speed convection inside the heat transfer component 13 and quickly take away the heat inside the heat transfer component 13 . Therefore, compared with the first option, the heat conduction efficiency of the heat dissipation solution of the second option can be increased by 17%.
  • the crystal pulling speed can be increased from 1.7mm/min to 2.0mm/min.
  • Solution 3 in Table 1 adds a new heat transfer body to the inner wall of heat transfer component 13. 131, but there is no blowing mechanism inside the heat transfer component 13 to accelerate the convection of the gas inside the heat transfer component 13, and there is only low-speed convection of argon gas.
  • the heat transfer body 131 can at least partially contact the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, and quickly conduct the heat of the single crystal silicon rod 20 to the heat transfer component 13 through contact conduction. , quickly take away the heat inside the heat transfer component 13.
  • the heat conduction efficiency of the heat dissipation solution of the third option can be increased by 64%.
  • the crystal pulling speed can be increased from 1.7mm/min to 2.8mm/min.
  • Solution 4 in Table 1 adds a heat transfer body 131 to the inner wall of the heat transfer component 13, but there is no blowing mechanism inside the heat transfer component 13 to speed up the convection of the internal gas in the heat transfer component 13.
  • the gas blown into the heat transfer component 13 is a high specific heat gas (nitrogen, hydrogen, helium, methane, ethane, acetylene, ethylene, n-butane, etc.), that is, there is a high specific heat gas in the heat transfer component 13 Low speed convection.
  • the heat transfer body 131 can at least partially contact the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, and quickly conduct the heat of the single crystal silicon rod 20 to the heat transfer component 13 through contact conduction. , quickly take away the heat inside the heat transfer component 13.
  • the heat conduction efficiency of the heat dissipation solution of the fourth option can be increased by 88%.
  • the crystal pulling speed can be increased from 1.7mm/min to 3.2mm/min.
  • Solution 5 in Table 1 adds a heat transfer body 131 to the inner wall of the heat transfer component 13, and a new blowing mechanism inside the heat transfer component 13. Gas is introduced into the blowing mechanism. of traditional argon gas.
  • the heat transfer body 131 can at least partially contact the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, and quickly conduct the heat of the single crystal silicon rod 20 to the heat transfer component 13 through contact conduction. , quickly take away the heat inside the heat transfer component 13.
  • the blowing mechanism can be used to pass argon gas into the inside of the heat transfer component 13, the argon gas can form high-speed convection inside the heat transfer component 13 and quickly take away the heat inside the heat transfer component 13. . Therefore, compared with the first option, the heat conduction efficiency of the heat dissipation solution of the fifth option can be increased by 76%. Correspondingly, the crystal pulling speed can be increased from 1.7mm/min to 3.0mm/min.
  • Solution 6 in Table 1 adds a heat transfer body 131 to the inner wall of the heat transfer component 13, and a new blowing mechanism inside the heat transfer component 13.
  • Gas is introduced into the blowing mechanism. is a gas with high specific heat.
  • the heat transfer body 131 can at least partially contact the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, and quickly conduct the heat of the single crystal silicon rod 20 to the heat transfer component 13 through contact conduction. , quickly take away the heat inside the heat transfer component 13.
  • the blowing mechanism can be used to pass high specific heat gas into the interior of the heat transfer component 13, the high specific heat gas can form high-speed convection inside the heat transfer component 13 and quickly take away the heat transfer component 13. internal heat.
  • the high-speed convection and high specific heat gas can take away more heat. Therefore, compared with the first option, the heat conduction efficiency of the heat dissipation solution of the sixth option can be increased by 106%. Correspondingly, the crystal pulling speed can be increased from 1.7mm/min to 3.5mm/min.
  • the thermal conduction efficiency and performance of the single crystal silicon rod 20 can be improved. Crystal pulling speed.
  • the heat conduction efficiency and crystal pulling speed of the single crystal silicon rod 20 can be further increased. Therefore, in practical applications, those skilled in the art may actually choose one or a combination of more of the above three measures to improve the heat conduction efficiency and crystal pulling speed of the single crystal silicon rod 20 .
  • FIG. 5 a schematic cross-sectional structural diagram of a heat transfer component according to an embodiment of the present application is shown.
  • FIG. 6 a schematic structural diagram of position B of the heat transfer component shown in FIG. 5 is shown.
  • FIG. 7 shows the second structural schematic diagram of the position B of the heat transfer component shown in Figure 5 .
  • the heat transfer component 13 may be a water-cooled heat transfer component, wherein a water-cooling channel 132 for containing cooling water is provided in the side wall of the heat transfer component 13 .
  • the heat transfer component 13 also includes a water inlet pipe 133 and a water outlet pipe 134. One end of the water inlet pipe 133 and the water outlet pipe 134 extends outside the main furnace body 10. The other ends of the water inlet pipe 133 and the water outlet pipe 134 are respectively connected with the water cooling channel 132.
  • the water inlet pipe 133 can be used to pass cooling water into the water cooling channel 132, and the water outlet pipe 134 can be used to lead out the cooling water in the water cooling channel 132, so as to realize the circulation of cooling water in the heat transfer component 13, and convert the single crystal
  • the heat transferred from the silicon rod 20 to the heat transfer component 13 is taken out of the main furnace body 10 .
  • the air blowing mechanism may include a first air duct provided in the heat transfer component 13. 135.
  • the first air duct 135 can be used to introduce gas; the heat transfer body 131 is provided with a hollow cavity 136 extending along its axial direction; the first air duct 135 is connected with the hollow cavity 136 to connect the heat transfer body 131 to the hollow cavity 136 .
  • the gas blows into the hollow cavity 136 , taking away the heat inside the heat transfer component 13 and allowing the heat transfer body 131 to maintain an upright state in contact with the single crystal silicon rod 20 .
  • the heat transfer body 131 is provided with a hollow cavity 136 extending along its axial direction, and the hollow cavity 136 is connected to the first air duct 135, when gas is introduced into the first air duct 135, The gas can enter the hollow cavity 136 from the first air duct 135, so that the heat transfer body 131 remains in an upright state and fully contacts the single crystal silicon rod 20. Since the hollow cavity 136 can be provided in each heat transfer body 131, each heat transfer body 131 can maintain a better upright state under the blowing of the gas.
  • the blowing mechanism may include a second air channel 137 and a blowing port 138 provided in the heat transfer component 13.
  • One end of the blowing port 138 is connected to the second air channel 137, and the other end passes through the heat transfer component. 13 and towards the gap between the heat transfer bodies 131; the second air channel 137 can be used to introduce gas and blow the gas out through the blowing port 138 to take away the heat inside the heat transfer component 13 and drive the The heat transfer body 131 is in contact with the single crystal silicon rod 20 .
  • blowing port 138 since one end of the blowing port 138 is connected to the second air duct 137 and the other end is disposed toward the gap between the heat transfer bodies 131, when gas is introduced into the second air duct 137, the gas That is, it enters the blowing port 138 from the second air duct 137 and blows to the gap between the heat transfer bodies 131 through the blowing port 138, so that the heat transfer body 131 remains in an upright state and is fully in contact with the single crystal silicon rod 20.
  • the single crystal silicon rod drawing device may also include: a heat screen 15, which is arranged in the main furnace body 10 and above the crucible 11; the heat screen 15 is set on the single crystal silicon rod. 20 and there is a gap between the single crystal silicon rod 20; the heat transfer component 13 is connected between the heat shield 15 and the single crystal silicon rod 20.
  • the heat screen 15 can be used for thermal insulation, stabilizing the thermal field temperature in the main furnace body 10, and can also guide gas.
  • the heat transfer component 13 can be facilitated to conduct heat generated by the single crystal silicon rod 20 under a stable thermal field temperature, thereby improving the heat conduction efficiency of the heat transfer component 13 .
  • the heat transfer component 13 can also be positioned away from the main The distance between the top of the furnace body 10 is relatively short, which facilitates extending the water inlet pipe 133 and the water outlet pipe 134 of the heat transfer assembly 13 to the outside of the main furnace body 10 and facilitates the layout of the heat transfer assembly 13 .
  • the heat shield 15 is usually a cone-shaped structure, that is, the diameter of the top of the heat shield 15 is usually larger than the diameter of the bottom, therefore, when the heat transfer component 13 is disposed in the heat shield 15, in order to match According to the shape of the heat shield 15, the heat transfer component 13 can be configured into a cone-shaped structure as shown in Figure 2, and the diameter of the top of the heat transfer component 13 is larger than the diameter of the bottom.
  • the top of the main furnace body 10 is also provided with an auxiliary furnace body 16.
  • the auxiliary furnace body 16 is internally connected with the main furnace body 10, and the single crystal silicon rod 20 at least partially extends into the auxiliary furnace body 16; the heat transfer component At least part of 13 is disposed in the auxiliary furnace body 16 and sleeved outside the single crystal silicon rod 20 to quickly take away the latent heat of crystallization of the single crystal silicon rod 20 in the auxiliary furnace body 16 .
  • the specific position of the heat transfer component 16 can be set according to actual needs.
  • the heat transfer component 16 can be integrally disposed in the auxiliary furnace body 13 .
  • part of the heat transfer component 16 can be arranged in the auxiliary furnace body 13 and the other part extends into the main furnace body 10 .
  • the embodiment of the present application may not limit the specific location of the heat transfer component 16 .
  • FIG. 8 a schematic structural diagram of the heat transfer component in the crystal silicon rod pulling device shown in FIG. 3 is shown.
  • FIG. 9 a schematic structural diagram of the heat transfer component C position shown in FIG. 8 is shown.
  • the heat transfer component 13 can be set in a cylindrical shape accordingly.
  • the heat transfer body 131 on the inner wall of the component 13 may be at least partially in contact with the single crystal silicon rod 20 .
  • the heat transfer bodies 131 may be evenly distributed on the inner wall of the heat transfer component 13 , or may be irregularly distributed on the inner wall of the heat transfer component 13 . Moreover, the heat transfer body 131 can be distributed on the entire inner wall of the heat transfer component 13 or on part of the inner wall of the heat transfer component 13 . The embodiment of the present application does not specifically limit the distribution manner of the heat transfer body 131 on the inner wall of the heat transfer component 13 .
  • the single crystal silicon rod drawing device described in the embodiment of the present application can at least include the following advantages:
  • the heat transfer component can be disposed in the single crystal silicon rod drawing device, the heat transfer component can at least partially contact the single crystal silicon rod when the single crystal silicon rod passes, so as to draw the single crystal silicon rod. Place The heat of the single crystal silicon rod is quickly conducted to the heat transfer component through contact conduction. In this way, the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.
  • the single crystal silicon rod drawing method may specifically include the following steps:
  • Step 1001 Provide a main furnace body, which is equipped with a crucible, a heater and a heat transfer component, and the crucible contains silicon material.
  • the single crystal silicon rod drawing device may be a single crystal furnace.
  • the main furnace body 10 can accommodate and fix the crucible 11, the heater 12, the heat transfer component 13, etc.
  • the crucible 11 can be a single crucible, a double crucible, etc., and the crucible 11 can be used to accommodate silicon material.
  • a single crystal silicon rod 20 can be grown at the single crystal growth interface of the silicon liquid.
  • the heater 12 can be used to heat the crucible 11 to melt the silicon material in the crucible 11 into silicon liquid, and to keep the silicon liquid at a suitable temperature during the drawing process of the single crystal silicon rod 20 .
  • the heat transfer component 13 can be set outside the single crystal silicon rod 20.
  • the heat transfer component 13 can absorb the heat radiated by the single crystal silicon rod 20 during crystallization, and transfer the absorbed heat to the outside of the main furnace body 10, thereby
  • the longitudinal temperature gradient of the single crystal silicon rod 20 is increased and the crystal growth rate of the single crystal silicon rod 20 is increased.
  • the heat transfer component 13 can be any one of a water-cooled heat transfer component or an air-cooled heat transfer component. The embodiment of the present application does not limit the specific type of the heat transfer component 13 .
  • the heat transfer bodies 131 are at least partially in contact with the single crystal silicon rod 20. Therefore, when the single crystal silicon rod 20 crystallizes, The generated heat is quickly conducted to the heat transfer component 13 through the heat transfer body 131, and is quickly transferred to the outside of the main furnace body 10 through the radiator. The heat generated by the single crystal silicon rod 20 is taken away faster.
  • Step 1002 Use the heater to heat and melt the silicon material in the crucible to obtain silicon liquid.
  • the heater 12 can be disposed at the bottom of the crucible 11 to heat the crucible 11 from the bottom of the crucible 11 , and/or the heater 12 can be disposed at the side of the crucible 11 to heat the crucible 11 from the bottom.
  • the side of the crucible 11 is heated to heat the silicon material in the crucible 11 into silicon liquid.
  • Step 1003 Pull crystals from the silicon liquid in the crucible to obtain a single crystal silicon rod; wherein, when the single crystal silicon rod passes through the heat transfer component, the heat transfer component at least partially interacts with the single crystal The silicon rods are in contact to conduct heat from the single crystal silicon rods.
  • the drawing process of the single crystal silicon rod 20 may include the steps of feeding ⁇ melting ⁇ temperature adjustment-seeding growth-shoulder growth-equal diameter growth ⁇ finishing.
  • the heat transfer body 13 can at least partially contact the single crystal silicon rod 20 to transfer the heat from the single crystal silicon rod 20. It is quickly transferred to the heat transfer component 13 through contact conduction. In this way, the longitudinal temperature gradient of the single crystal silicon rod 20 can be increased and the crystal growth rate of the single crystal silicon rod 20 can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod 20 and reducing the production cost of the single crystal silicon rod 20 .
  • an air blowing mechanism is also provided in the heat transfer component.
  • the step of pulling crystals from the silicon liquid in the inner crucible to obtain a single crystal silicon rod may also include: using the air blowing mechanism.
  • the heat transfer body is blown so that the heat transfer body contacts the single crystal silicon rod and takes away the heat inside the heat transfer component.
  • a blowing mechanism is also provided in the heat transfer component 13.
  • the blowing mechanism can be used to blow the heat transfer body 131 to take away the heat inside the heat transfer component 13 and make the heat transfer
  • the heating body 131 is in contact with the single crystal silicon rod 20 .
  • gas to blow the heat transfer body 131 inside the heat transfer component 13
  • the gas convection inside the heat transfer component 13 can be accelerated and the heat inside the heat transfer component 13 can be taken away as quickly as possible; on the other hand, due to The hardness of the heat transfer body 131 is relatively soft, and it is likely that the heat transfer body 131 will collapse and be unable to contact the single crystal silicon rod 20.
  • the heat transfer body 131 can be The heat transfer body 131 is kept in an upright state and fully contacts the single crystal silicon rod 20 for heat conduction, thereby increasing the drawing speed of the single crystal silicon rod 20 .
  • the blowing mechanism may specifically include a first ventilation structure and a second ventilation structure, and the blowing mechanism is used to blow the heat transfer body to take away the heat inside the heat transfer component and make it
  • the step of contacting the heat transfer body with the single crystal silicon rod may include the following sub-steps:
  • Sub-step S11 During the charging and melting stages, the first ventilation structure supplies the first working gas into the main furnace body.
  • the first working gas can be introduced into the main furnace body 10 through the first ventilation structure 14 to perform relevant operations in the atmosphere of the first working gas.
  • the first working gas may be a conventional protective gas such as argon.
  • Sub-step S12 From the temperature adjustment stage to the finishing stage, the second ventilation structure introduces a second working gas into the main furnace body, and the specific heat of the second working gas is greater than the specific heat of the first working gas. .
  • the second working gas after entering the temperature adjustment process, the second working gas can be introduced into the main furnace body 10 through the second ventilation structure, because the specific heat of the second working gas is higher than that of the first working gas.
  • the specific heat is large. Therefore, starting from the temperature adjustment stage, the thermal conductivity coefficient of the single crystal silicon rod 20 in the main furnace body 10 is large, which is beneficial to increasing the drawing speed of the single crystal silicon rod 20.
  • the cost of the second working gas with higher specific heat is greater than the cost of the first working gas with lower specific heat.
  • the heat transfer coefficient in the main furnace body 10 Only then can the pulling speed of the single crystal silicon rod 20 be affected. Therefore, the lower-cost first working gas is introduced before the temperature adjustment stage, and the higher-cost second working gas is introduced only after the temperature adjustment begins, so as to increase the heat transfer coefficient in the main furnace body 10 , In this way, while increasing the pulling speed of the single crystal silicon rod 20, the cost of gas can also be reduced.
  • the thermal conductivity coefficient in the main furnace body 10 has an increasing influence on the pulling speed of the single crystal silicon rod 20.
  • the effect of the equal-diameter growth stage can be increased after the equal-diameter growth stage begins.
  • the second working gas is introduced into the main furnace body 10 through the second ventilation structure, which is not limited in the embodiment of the present application.
  • a mixed gas of the first working gas and the second working gas may be formed in the main furnace body 10, and the ratio of the two The range can be 0:1-1:0.
  • the embodiment of the present application does not specifically limit the ratio of the first working gas and the second working gas.
  • the first working gas and the second working gas The inlet flow rate may be 10-500L/min.
  • the embodiment of the present application may not limit the inlet rate of the first working gas and the second working gas.
  • the single crystal silicon rod drawing method described in the embodiment of the present application can at least include the following advantages:
  • the heat transfer component can be disposed in the single crystal silicon rod drawing device, the heat transfer component can at least partially contact the single crystal silicon rod when the single crystal silicon rod passes, so as to draw the single crystal silicon rod.
  • the heat of the single crystal silicon rod is quickly conducted to the heat transfer component through contact conduction. In this way, the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.
  • a schematic structural diagram of a heat exchanger according to the embodiment of the present application is shown.
  • a schematic top structural diagram of the heat exchanger shown in Fig. 11 is shown.
  • a schematic structural diagram of the heat exchanger shown in Fig. 11 is shown.
  • the heat exchanger may include: an annular body 100, and a crystal pulling channel 200 for the single crystal silicon rod 20 to pass through is provided in the annular body 100; wherein, the inner wall of the annular body 100 is provided with a plurality of The heat transfer component 13 extends toward the center.
  • the heat transfer component 13 at least partially contacts the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through to conduct the heat of the single crystal silicon rod 20; the water inlet pipe 110 and the water outlet pipe 11 enter.
  • the water pipe 110 and the water outlet pipe 11 are connected to the annular body 100 respectively.
  • the heat transfer components 13 can be used to directly contact the single crystal silicon rod 20 to convert the single crystal silicon rod 20 into direct contact.
  • the heat of the crystalline silicon rod 20 is quickly conducted to the annular body 100 through contact conduction, and the heat is conducted to the outside of the single crystal silicon rod drawing device through the annular body 100 and the outlet pipe 11 .
  • the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.
  • the annular body 100 serves as the structural main body of the heat exchanger and can be used to support the heat transfer component 13, the water inlet pipe 110 and the water outlet pipe 11.
  • the annular body 100 may specifically include an annular shell.
  • the shell includes an inner wall and an outer wall arranged oppositely.
  • the inner wall and the outer wall enclose a first water-cooling channel 1001; the first water-cooling channel 1001 is located in the shell.
  • the body is distributed in a spiral shape, and a first water inlet is provided at the bottom of the first water cooling channel 1001, and the first water inlet is connected to the water inlet pipe 110.
  • a first water outlet is provided on the top of the first water cooling channel 1001, and the first water outlet is connected to the water outlet pipe 11.
  • the external cooling water can enter the first water cooling channel 1001 from the first water inlet through the water inlet pipe 110. After flowing through the first water cooling channel 1001, it enters the water outlet pipe 11 from the first water outlet at the top and then flows out, thereby realizing heat conduction.
  • the heat transfer component 13 may include bristles, fibers, etc.
  • the heat transfer component 13 can be made of fibers with high thermal conductivity. In this way, when the heat transfer component 13 is in contact with the single crystal silicon rod 20, the heat of the single crystal silicon rod 20 can be further accelerated to be transferred to the target through the heat transfer component 13. Describe the speed of the heat exchanger.
  • the material of the heat transfer component 13 may include but is not limited to any one of carbon fiber, graphene fiber, and metal fiber. The embodiment of the present application may not limit the specific material of the heat transfer component 13 .
  • the contact distance between the heat transfer component 13 and the single crystal silicon rod 20 can be 0-50 mm, so that the heat transfer component 13 can fully contact the single crystal silicon rod 20 to facilitate heat transfer.
  • the component 13 quickly conducts the heat of the single crystal silicon rod 20 to the heat exchanger.
  • the diameter of a single heat transfer component 13 may be 0.1-10 mm. The embodiment of the present application does not specifically limit the contact distance between the heat transfer component 13 and the single crystal silicon rod 20 and the diameter of the heat transfer component 13 .
  • one end of the heat transfer component 13 connected to the annular body 100 can be carbonized hard fiber, so that the heat transfer component 13 can be reliably connected to the annular body 100 .
  • One end of the heat transfer component 13 in contact with the single crystal silicon rod 20 can be a soft fiber to achieve flexible contact between the heat transfer component 13 and the single crystal silicon rod 20 to prevent the heat transfer component 13 from affecting the single crystal silicon rod 20 Surface Quality.
  • the heat transfer component 13 may also be made entirely of carbonized hard fibers, or entirely made of soft fibers, which is not limited in the embodiments of the present application.
  • the heat transfer component 13 can be bonded to the inside of the annular body 100 through thermally conductive glue, and/or the heat transfer component 13 can be snap-fastened to the inside of the annular body 100, and/or the heat transfer component 13 can be tightened through a tight seal.
  • the fastener is connected to the inner side of the annular body 100 .
  • the embodiment of the present application may not limit the connection method between the heat transfer component 13 and the annular body 100 .
  • the inner wall of the annular body 100 is provided with a first groove, and one end of the heat transfer component 13 can be embedded in the first groove and connected with the first groove. connect.
  • the connection method between the heat transfer component 13 and the annular body 100 can be relatively simple.
  • one end of the heat transfer component 13 can be bonded in the first groove through thermal conductive glue, and/or one end of the heat transfer component 11 can be interference-fitted with the first groove to transfer the heat transfer component 11 to the first groove.
  • One end of the thermal component 13 is reliably connected in the first groove.
  • a first groove can be formed on the inner wall of the annular body 100 in the area where the heat transfer component 13 needs to be disposed. Then, apply thermally conductive glue in the first groove, and then implant one end of the heat transfer component 13 into the first groove coated with thermally conductive glue through a hair transplanting machine, so that the heat transfer component 13 can be inserted into the first groove through the thermally conductive glue.
  • One end of 13 is connected in the first groove; leave it at room temperature for a period of time and wait for the thermal conductive glue to dry in the shade. Then use special equipment to spray the thermal conductive glue to the position of the first groove. Leave it at room temperature for a period of time to dry in the shade. Repeat 3-5.
  • the internal size of the first groove can be set slightly smaller than the size of the heat transfer component 13, so that when one end of the heat transfer component 13 is implanted into the first groove through a hair transplanting machine, One end of the heat transfer component 13 can be interference-fitted with the first groove, so that one end of the heat transfer component 13 can be reliably connected in the first groove.
  • FIG. 14 a schematic structural diagram of a first fixing plate according to an embodiment of the present application is shown.
  • FIG. 15 an enlarged structural schematic diagram of the position M of the first fixing plate shown in FIG. 14 is shown.
  • the inner wall of the annular body 100 is provided with a second groove; the heat exchanger may also include a first fixed plate 21 shown in Figure 4, and a third groove 211 is provided on the first fixed plate 21, The heat transfer component 13 is connected to the third groove 211; the first fixing plate 21 is embedded in the second groove and connected to the second groove.
  • one end of the heat transfer component 13 can be connected to the first fixing plate 21 first. Then, the first fixing plate 21 is connected to the second groove on the inner wall of the annular body 100. Compared with the operation of directly implanting the heat transfer component 13 into the inner wall of the annular body 100, the operability of connecting the heat transfer component 13 to the first fixing plate 21 is better, and the heat transfer component 13 is mounted on the first fixing plate 21. The connection strength is easier to ensure.
  • one end of the heat transfer component 13 can be bonded in the third groove 211 through the thermal conductive adhesive layer 22, or one end of the heat transfer component 13 can be clamped in the third groove 211 to achieve heat transfer. Reliable connection between component 13 and first fixing plate 21.
  • thermal conductive glue can be coated in the third groove 211 of the first fixing plate 21 to form the thermal conductive glue layer 22, and then one end of the heat transfer component 13 is implanted into the third groove coated with thermal conductive glue through a hair transplanting machine.
  • one end of the heat transfer component 13 is connected in the third groove 211 through the thermal conductive glue.
  • FIG. 16 the second enlarged structural schematic diagram of the position of the first fixing plate M shown in FIG. 14 is shown. As shown in FIG. 16 , one end of the heat transfer component 13 is clamped in the third groove 211 to achieve reliable connection between the heat transfer component 13 and the first fixing plate 21 .
  • the two groove walls of the third groove 211 can be provided with mounting holes 212.
  • the mounting holes 212 can be used for bolts, screws and other fasteners to pass through, so that the two grooves can be pressed together through the above-mentioned fasteners.
  • the groove walls form a clamping effect on the heat transfer component 13 in the third groove 211, and the heat transfer component 13 is clamped in the third groove 211.
  • fasteners can be used to pass through the mounting holes 212 on the two groove walls in sequence, so that the heat transfer component 13 can be inserted into the third groove 211 of the first fixing plate 21.
  • the thermal component 13 can be clamped in the third groove 211, and the connection method of the heat transfer component 13 on the first fixing plate 21 is relatively simple.
  • FIG. 17 a schematic structural diagram of another first fixing plate according to the embodiment of the present application is shown.
  • FIG. 18 a schematic structural diagram of the N position of the first fixing plate shown in FIG. 17 is shown.
  • the middle part of the heat transfer component 13 is embedded in the third groove 211. Both ends of 13 extend toward the crystal pulling channel 200 respectively; the heat exchanger may also include a second fixing plate 23 and a first fastener.
  • the second fixing plate 23 is embedded in the third groove 211 to transfer the heat exchanger to the crystal pulling channel 200.
  • the middle part of the thermal component 13 is pressed into the third groove 211, and the first fasteners are respectively connected to the second fixing plate 23 and the first fixing plate 21 to fix the second fixing plate 23 to the first fixing plate. Plate 21.
  • the middle part of the heat transfer component 13 can be bent and embedded in the third groove 211, and the heat transfer component 13 embedded in the third groove 211 can be arranged in a "U" shape. .
  • the second fixing plate 23 is pressed against the middle part of the heat transfer component 13 and embedded in the third groove 211 .
  • the second fixing plate 23 is fixedly connected to the first fixing plate 21 using first fasteners such as bolts and screws, so that the heat transfer component 13 can be reliably connected to the first fixing plate 21 . Due to the pressing effect of the second fixing plate 23, the connection reliability of the heat transfer component 13 on the first fixing plate 21 can be greatly improved.
  • the first fixing plate 21 may be provided with one third groove 211 as shown in Figure 14 , or may be provided with multiple third grooves arranged in parallel as shown in Figure 17 211, the embodiment of the present application does not specifically limit the number of third grooves 211 on the first fixing plate 21.
  • the first fixing plate 21 can be bonded to the second groove through thermally conductive glue, and/or the first fixing plate 21 can also be connected to the second groove through a second fastener, To realize the connection between the first fixing plate 21 and the annular body 100 .
  • the embodiment of the present application does not specifically limit the connection method between the first fixing plate 21 and the annular body 100 .
  • FIG. 19 a schematic structural diagram of a heat exchanger according to an embodiment of the present application is shown.
  • Fig. 20 a schematic structural diagram of the water inlet pipe of the heat exchanger shown in Fig. 19 is shown.
  • Fig. 21 A schematic structural diagram of the water outlet pipe of the heat exchanger shown in Figure 19 is shown.
  • Figure 22 a schematic structural diagram of the cooling pipe of the heat exchanger shown in Figure 19 is shown.
  • the heat exchanger may specifically include: the water inlet pipe 110 is annular, the water outlet pipe 11 is annular, the water outlet pipe 11 and the water inlet pipe 110 are spaced and coaxially arranged; the annular body 100 includes a plurality of cooling Pipes 12, one end of each cooling pipe 12 is connected to the water inlet pipe 110, and the other end is connected to the water outlet pipe 11, so that the cooling pipes 12 are connected to the water inlet pipe 110 and the water outlet pipe 11 respectively.
  • a plurality of cooling pipes 12 Enclosed to form a crystal pulling channel 200; wherein, the side of the cooling tube 12 facing the crystal pulling channel 200 is the inner side, and a plurality of heat transfer components 13 are provided on the inner side.
  • the heat transfer components 13 extend towards the center of the crystal pulling channel 200, and the heat transfer components 13
  • the thermal component 13 can be in contact with the single crystal silicon rod 20 when the single crystal silicon rod 20 passes through, so as to conduct the heat of the single crystal silicon rod 20 to the cooling tube 12 .
  • the heat transfer components 13 can be used to directly contact the single crystal silicon rod 20.
  • the heat of the single crystal silicon rod 20 is quickly transferred to the cooling pipe 12 through contact conduction, and the heat is transferred to the outside of the single crystal silicon rod drawing device through the cooling pipe 12 and the water outlet pipe 11 .
  • the longitudinal temperature gradient of the single crystal silicon rod 20 can be increased and the crystal growth rate of the single crystal silicon rod 20 can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod 20 and reducing the production cost of the single crystal silicon rod 20 .
  • the water inlet pipe 110 may be located at the bottom of the heat exchanger
  • the water outlet pipe 11 may be located at the top of the heat exchanger
  • the cooling pipe 12 is located between the water inlet pipe 110 and the water outlet pipe 11, and is connected to the water inlet pipe 110 and the water outlet pipe 11 respectively.
  • the water outlet pipe 11 is connected.
  • the external cooling water can enter the cooling pipe 12 from the bottom of the cooling pipe 12 through the water inlet pipe 110, flow through the cooling pipe 12 and then flow out from the water outlet pipe 11 at the top, thereby realizing heat conduction.
  • a plurality of first openings 101 are provided on the top of the water inlet pipe 110.
  • the plurality of first openings 101 are arranged at intervals along the circumferential direction of the water inlet pipe 110.
  • the first openings 101 can be used to connect the water in the water inlet pipe 110. Cooling water is drained.
  • the water inlet pipe 110 may also be provided with a water guide pipe 102 , and the water guide pipe 102 may be connected to a water storage device that stores cooling water to guide the cooling water into the water inlet pipe 110 .
  • the water outlet pipe 11 is provided with a plurality of second openings 111.
  • the plurality of second openings 111 are arranged at intervals along the circumferential direction of the water outlet pipe 11.
  • the second openings 111 correspond to the first openings 101.
  • the cooling pipe 12 One end of the cooling pipe 12 is connected to the first opening 101, and the other end of the cooling pipe 12 is connected to the corresponding second opening 111, so that the plurality of cooling pipes 12 are sequentially connected to the water inlet pipe 110 and the water outlet pipe 11 along the circumferential direction to form a cylindrical shape. of heat exchanger.
  • the water outlet pipe 11 may also be provided with a drainage pipe 112 , and the drainage pipe 112 may be used to discharge the cooling water in the water outlet pipe 11 .
  • a second water-cooling channel 121 is provided in the cooling pipe 12, and the second water-cooling channel 121 can be used for cooling water to flow through.
  • a second water inlet 122 is provided at the bottom of the second water cooling channel 121.
  • the second water inlet 122 can be disposed opposite to the first opening 101 on the water inlet pipe 110 to achieve communication between the cooling pipe 12 and the water inlet pipe 110 .
  • a second water outlet 123 is provided at the top of the second water-cooling channel 121 .
  • the second water outlet 123 can be opposite to the second opening 111 on the water outlet pipe 11 to achieve communication between the cooling pipe 12 and the water outlet pipe 11 .
  • the diameter of the water inlet pipe 110 and the diameter of the water outlet pipe 11 can be limited according to the actual situation.
  • the number and position of the first opening 101, the second opening 111 and the cooling pipe 12 can also be determined according to the actual situation. So that the heat exchanger can be compatible with crystal rods of different diameters.
  • the temperature of the cooling water entering the water inlet pipe 110 is usually low.
  • the cooling water in the water inlet pipe 110 flows through the cooling channel of the cooling pipe, it can absorb the heat transferred from the single crystal silicon rod 20 to the heat transfer component 13 , the temperature of the cooling water increases and is discharged to the outside of the single crystal silicon rod pulling device through the water outlet pipe 11, so that the latent heat of crystallization of the single crystal silicon rod 20 is finally taken away to the single crystal silicon rod pulling device.
  • the heat transfer component 13 can be in direct contact with the single crystal silicon rod 20, the latent heat of crystallization generated by the single crystal silicon rod 20 can be quickly conducted to the cooling tube 12 through the heat transfer component 13 and discharged to the outside of the single crystal silicon rod drawing device. . It is possible to increase the longitudinal temperature gradient inside the single crystal silicon rod drawing device and increase the crystal growth rate of the single crystal silicon rod 20, thereby increasing the drawing efficiency of the single crystal silicon rod 20 and reducing the strength of the single crystal silicon rod 20. Cost of production.
  • the cooling tube 12 can be made of stainless steel, copper, alloy or other high thermal conductive materials.
  • heat transfer component 13 By connecting the heat transfer component 13 to the cooling tube 12, heat exchange between the heat transfer component 13 and the cooling tube 12 can be achieved.
  • the thermal component 13 can transfer the heat absorbed from the single crystal silicon rod 20 to the cooling tube 12 .
  • FIG. 23 a schematic structural diagram of a cooling pipe according to an embodiment of the present application is shown.
  • FIG. 24 a schematic structural diagram of a top view of the cooling pipe shown in FIG. 23 is shown.
  • a fourth groove 124 extending along the length direction of the cooling pipe 12 is provided inside the cooling pipe 12 , and at least part of the heat transfer component 13 is embedded in the fourth groove 124 to increase the The contact area between the heat transfer component 13 and the cooling tube 12 facilitates heat exchange between the heat transfer component 13 and the cooling water inside the cooling tube 12, and improves the heat exchange efficiency between the heat transfer component 13 and the cooling tube 12. Therefore, the heat conduction speed between the heat exchanger and the single crystal silicon rod 20 is further increased to increase the crystal growth rate of the single crystal silicon rod 20 .
  • the fourth groove 124 may include a groove bottom and two groove walls 125 connected to the groove bottom, and one end of the heat transfer component 13 is embedded between the two groove walls 125.
  • the other end of the heat transfer component 13 extends toward the crystal pulling channel 200;
  • the heat exchanger may also include a third fastener 141, and the third fastener 141 is respectively connected to the two groove walls 125 to pass through the two groove walls. 125 clamps the heat transfer component 13, and reliably connects one end of the heat transfer component 13 to the cooling tube 12.
  • the third fastener 141 can pass through the two groove walls 125 and the fourth groove 124 and be threadedly connected with the two groove walls 125 respectively to exert force on the two groove walls 125 toward the fourth groove.
  • the clamping force of the groove 124 is used to clamp the heat transfer component 13 located in the fourth groove 124 through the two groove walls 125, and the implementation method is relatively simple.
  • the number of the third fasteners 141 may be multiple, and the plurality of third fasteners 141 may be sequentially spaced along the length direction of the cooling pipe 12 , so that the two groove walls 125 can be positioned at multiple locations.
  • a clamping force is formed to clamp the heat transfer component 13 .
  • the third fastener 141 may include but is not limited to at least one of screws, bolts, and studs, and the embodiment of the present application may not limit the specific type of the third fastener 141 .
  • FIG. 25 a schematic structural diagram of another cooling pipe according to the embodiment of the present application is shown.
  • Fig. 26 a schematic structural diagram of the Q position of the cooling pipe shown in Fig. 25 is shown.
  • Fig. 27 is shown Schematic of the top view of the cooling tube shown.
  • the middle part of the heat transfer component 13 is embedded in the fourth groove 124, and the two ends of the heat transfer component 13 respectively extend towards the crystal pulling channel 200; the heat exchanger can also be It includes a third fastener 151 and a fourth fastener 161.
  • the third fastener 151 is embedded in the fourth groove 124 to press the middle part of the heat transfer component 13 in the fourth groove 124.
  • the fourth fastener 161 is connected to the third fastener 151 and the cooling pipe 12 respectively to fix the third fastener 151 to the cooling pipe 12 .
  • the middle part of the heat transfer component 13 can be embedded in the fourth groove 124 first, so that both ends of the heat transfer component 13 can face the single crystal silicon rod 20 . Then, the third fastener 151 is inserted into the fourth groove 124 and pressed against the middle part of the heat transfer component 13 . Finally, the fourth fastener 161 is used to connect the third fastener 151 to the bottom of the fourth groove 124 . Under the pressing action of the third fastener 151, the middle part of the heat transfer component 13 can be reliably fitted.
  • the fourth groove 124 is in sufficient contact with the cooling pipe 12 to realize heat exchange between the heat transfer component 13 and the cooling pipe 12 .
  • the number of the fourth fasteners 161 may be multiple, and the plurality of fourth fasteners 161 may be arranged at intervals along the length direction of the cooling pipe 12 so that the third fasteners 151 can reliably Connect to the cooling pipe 12 and fully press the middle part of the heat transfer component 13.
  • the fourth fastener 161 may include but is not limited to at least one of screws, bolts, and studs, and the embodiment of the present application may not limit the specific type of the fourth fastener 161 .
  • FIG. 28 a schematic structural diagram of yet another cooling pipe according to the embodiment of the present application is shown.
  • Fig. 29 a schematic structural diagram of the cooling pipe P position shown in Fig. 28 is shown.
  • Fig. 30 Fig. 28 is shown Schematic of the top view of the cooling tube shown.
  • the side of the cooling tube 12 away from the crystal pulling channel 200 is the outside, and the two side walls between the outside and the inside are the first side walls 126.
  • the heat transfer component One end of 13 is connected to the first side wall 126, and the other end of the heat transfer component 13 extends toward the crystal pulling channel 200; the heat exchanger may also include a fourth fixing plate 17 and a fifth fastener 18.
  • the fourth fixing plate 17 is disposed on the side of the heat transfer component 13 away from the first side wall 126.
  • the fifth fasteners 18 are respectively connected to the fourth fixing plate 17 and the first side wall 126 to clamp the heat transfer component 13 on the fourth fixing plate 17 and the first side wall 126.
  • the heat transfer component 13 is connected to the cooling tube 12 between the fixed plate 17 and the first side wall 126 .
  • one end of the heat transfer component 13 can be connected to the first side wall 126 first. Then, the fourth fixing plate 17 is connected to the first side wall 126 and pressed onto the heat transfer component 13 . Finally, the fifth fastener 18 is used to connect the fourth fixing plate 17 to the first side wall 126 . Under the pressing action of the fourth fixing plate 17, one end of the heat transfer component 13 can be reliably attached to the first side wall 126 and fully contact with the cooling tube 12, so as to realize the connection between the heat transfer component 13 and the cooling tube 12. heat exchange between.
  • the fourth fixing plate 17 can be used to press one end of the heat transfer component 13 to the first side walls 126 on both sides of the cooling pipe 12 , grooves in the cooling pipe 12 are avoided.
  • the operation of connecting the heat transfer component 13 can make the structure of the cooling pipe 12 simpler, reduce the processing difficulty of the cooling pipe 12, and thereby reduce the structural complexity of the heat exchanger.
  • the number of fifth fasteners 18 may be multiple, and the plurality of fifth fasteners 18 may be arranged at intervals along the length direction and width direction of the cooling pipe 12 so that the fourth fixing plate 17 can Reliably connect to the cooling pipe 12 and fully press one end of the heat transfer component 13.
  • the fifth fastener 18 may include but is not limited to at least one of screws, bolts, and studs, and the embodiment of the present application may not limit the specific type of the fifth fastener 18 .
  • the fourth fixed plate 17 may specifically include: a fitting plate 171 and a resisting plate 172 connected to the fitting plate 171.
  • the fitting plate 171 and the resisting plate 172 are arranged at a preset angle; wherein, the fitting plate 171 is arranged at a heat transfer
  • the side of the component 13 away from the first side wall 126 is connected to the first side wall 126 through the fifth fastener 18 .
  • the resisting plate 172 is close to the outside of the cooling pipe 12 and resists the first side wall 126 .
  • the holding plate 172 , the fitting plate 171 and the first side wall 126 enclose a space for accommodating one end of the heat transfer component 13 to achieve reliable connection between the heat transfer component 13 and the cooling tube 12 .
  • the resisting plate 172 of the fourth fixing plate 17 can be resisted against the end of the first side wall 126 close to the outer side, So that the fitting plate 171 can be pressed against the side of the heat transfer component 13 away from the first side wall 126 .
  • the fifth fastener 18 is used to connect the fitting plate 171 to the first side wall 126 so that the fitting plate 171 can generate a clamping force capable of clamping the heat transfer component 13 so that the heat transfer component 13 can be reliably is connected to the cooling pipe 12.
  • the preset angle between the fitting plate 171 and the resisting plate 172 can be any value between 60 degrees and 120 degrees. In order to facilitate the resisting between the resisting plate 172 and the first side wall 126, the The above preset angle can be set to 90 degrees. The embodiment of the present application does not specifically limit the value of the preset angle between the fitting plate 171 and the resisting plate 172 .
  • the height of the resisting plate 172 can be the same as the height of the heat transfer component 13 The diameters are substantially equal, so that the space formed between the resisting plate 172, the fitting plate 171 and the first side wall 126 can just accommodate the heat transfer component 13 and form a certain clamping of the heat transfer component 13 to improve the heat transfer component. 13 and the cooling pipe 12 connection reliability.
  • the fitting plate 171 can also be provided with a first mounting hole 173.
  • the first mounting hole 173 can be used for the fifth fastener 18 to pass through, so as to secure the fourth fixing plate through the fifth fastener 18.
  • 17 is connected to the first side wall 126.
  • FIG. 33 a schematic structural diagram of another cooling pipe according to the embodiment of the present application is shown.
  • Fig. 34 a schematic structural diagram of the position E of the cooling pipe shown in Fig. 33 is shown.
  • Fig. 35 Fig. 33 is shown Schematic of the top view of the cooling tube shown.
  • FIG. 36 a schematic structural view of the clamping member in the cooling pipe shown in FIG. 33 is shown.
  • FIG. 37 a schematic structural view from above of the clamping member shown in FIG. 36 is shown.
  • the heat exchanger may also include a clamping member 19, which is provided with a fifth groove 191; the middle part of the heat transfer component 13 is embedded in the fifth groove.
  • a clamping member 19 In the groove 191 and connected to the fifth groove 191, both ends of the heat transfer component 13 extend toward the crystal pulling channel 200; the fifth groove 191 of the clamping member 19 is clamped outside the cooling pipe 12, so that the fifth groove
  • the heat transfer component 13 in 191 is fit with the cooling tube 12 to connect the heat transfer component 13 to the cooling tube 12 .
  • the heat exchanger may also include sixth fasteners 192 , which are respectively connected to the clamping member 19 and the cooling pipe 12 to connect the clamping member 19 to the cooling pipe 12 superior.
  • the middle part of the heat transfer component 13 can be wound around the cooling tube 12 first, so that both ends of the heat transfer component 13 can face the single crystal silicon rod 20 . Then, the fifth groove 191 of the clamping member 19 is clamped outside the cooling pipe 12 to press the middle part of the heat transfer component 13 to the outside of the cooling pipe 12 . Finally, the sixth fastener 192 is used to connect the clamping member 19 to the cooling pipe 12 . Under the pressing action of the clamping member 19, the middle part of the heat transfer component 13 can reliably fit outside the cooling tube 12 and fully contact the cooling tube 12, so as to realize the connection between the heat transfer component 13 and the cooling tube 12. Heat exchange.
  • the contact area is relatively large.
  • the heat exchange efficiency between the heat transfer component 13 and the cooling tube 12 can be greatly improved, thus the heat conduction speed between the heat exchanger and the single crystal silicon rod 20 can be greatly improved to improve the single crystal silicon rod. Crystal growth rate of 20.
  • the clamping member 19 can be used to press one end of the heat transfer component 13 onto the side wall and outer wall of the cooling tube 12, the operation of making a slot on the cooling tube 12 to connect the heat transfer component 13 is avoided. In this way, The structure of the cooling pipe 12 can be made relatively simple, and the processing difficulty of the cooling pipe 12 can be reduced, thereby reducing the structural complexity of the heat exchanger.
  • the drawings of the embodiment of the present application only show the case where the cross-sectional shape of the clamping member 19 is a "U" shape, but in actual applications, the cross-sectional shape of the clamping member 19 can be based on the cooling pipe.
  • the shape of 12 is determined so that the clamping member 19 can adapt to the shape of the cooling pipe 12 to improve the reliability of the connected member 19 to press the heat transfer component 13.
  • the embodiment of the present application does not have any requirements for the cross-sectional shape of the clamping member 19. Make specific limitations.
  • the heat exchanger described in the embodiment of the present application can at least include the following advantages:
  • the heat transfer components can be used to directly contact the single crystal silicon rod, so that all the heat transfer components can be directly contacted with the single crystal silicon rod.
  • the heat of the single crystal silicon rod is quickly conducted to the annular body through contact conduction, and the heat is conducted to the outside of the single crystal silicon rod drawing device through the annular body and the water outlet pipe. In this way, the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.
  • the embodiment of the present application also provides a heat exchange component.
  • the heat exchange component may specifically include a heat shield and the heat exchanger described in any of the above embodiments; wherein, the heat shield is sleeved on the heat exchanger. outside, and there is a gap between it and the heat exchanger.
  • the heat screen can be used to guide airflow to rapidly cool the area around the single crystal silicon rod, thereby increasing the growth rate of the single crystal silicon rod.
  • the heat exchanger By disposing the heat exchanger between the heat shield and the single crystal silicon rod, the heat conduction efficiency of the single crystal silicon rod can be further improved, thereby increasing the drawing speed of the single crystal silicon rod.
  • a plurality of heat transfer components extending toward the center are provided inside the heat exchanger.
  • the heat transfer components can be used to directly contact the single crystal silicon rod, so that the single crystal silicon rod can be directly connected to the single crystal silicon rod.
  • silicon The heat of the rod is quickly conducted to the annular body through contact conduction, and the heat is conducted to the outside of the single crystal silicon rod drawing device through the annular body and the water outlet pipe. In this way, the longitudinal temperature gradient of the single crystal silicon rod can be increased, and the crystal growth rate of the single crystal silicon rod can be increased, thereby increasing the drawing efficiency of the single crystal silicon rod and reducing the production costs.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Des modes de réalisation de la présente demande concernent un appareil d'étirage de tige de silicium monocristallin, un procédé d'étirage de tige de silicium monocristallin, un échangeur de chaleur et un ensemble d'échange de chaleur. L'appareil d'étirage de tige de silicium monocristallin comprend : un corps de four principal ; un creuset, disposé dans le corps de four principal et utilisé pour recevoir un matériau de silicium ; un dispositif de chauffage, disposé dans le corps de four principal et utilisé pour chauffer le matériau de silicium dans le creuset en silicium fondu, de façon à faire croître une tige de silicium monocristallin à partir du silicium fondu ; et un ensemble de transfert de chaleur, disposé dans l'appareil d'étirage de tige de silicium monocristallin. L'ensemble de transfert de chaleur est au moins partiellement en contact avec la tige de silicium monocristallin lorsque la tige de silicium monocristallin passe, de façon à conduire la chaleur de la tige de silicium monocristallin. Dans les modes de réalisation de la présente demande, l'ensemble de transfert de chaleur peut être au moins partiellement en contact avec la tige de silicium monocristallin, de telle sorte que la chaleur de la tige de silicium monocristallin est rapidement conduite vers l'ensemble de transfert de chaleur au moyen d'une conduction de contact. De cette manière, le gradient de température longitudinale de la tige de silicium monocristallin peut être augmenté, et la vitesse de croissance cristalline de la tige de silicium monocristallin peut être augmentée, ce qui permet d'améliorer l'efficacité d'étirage de la tige de silicium monocristallin et de réduire les coûts de production de la tige de silicium monocristallin.
PCT/CN2023/107981 2022-08-09 2023-07-18 Appareil et procédé d'étirage de tige de silicium monocristallin, échangeur de chaleur et ensemble d'échange de chaleur WO2024032332A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202210952526.4 2022-08-09
CN202210952526.4A CN117628962A (zh) 2022-08-09 2022-08-09 一种换热器、换热组件和单晶硅棒拉制装置
CN202210946878.9 2022-08-09
CN202210946878.9A CN117626404A (zh) 2022-08-09 2022-08-09 一种单晶硅棒拉制装置和单晶硅棒拉制方法

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