WO2024027891A1 - Procédé de fixation d'une borne à une structure de substrat métallique pour un module d'alimentation à semi-conducteur et module d'alimentation à semi-conducteur - Google Patents

Procédé de fixation d'une borne à une structure de substrat métallique pour un module d'alimentation à semi-conducteur et module d'alimentation à semi-conducteur Download PDF

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Publication number
WO2024027891A1
WO2024027891A1 PCT/EP2022/071540 EP2022071540W WO2024027891A1 WO 2024027891 A1 WO2024027891 A1 WO 2024027891A1 EP 2022071540 W EP2022071540 W EP 2022071540W WO 2024027891 A1 WO2024027891 A1 WO 2024027891A1
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WO
WIPO (PCT)
Prior art keywords
terminal
metal
layer
welding
power module
Prior art date
Application number
PCT/EP2022/071540
Other languages
English (en)
Inventor
David GUILLON
Martin Bayer
Andreas Roesch
Giovanni A. SALVATORE
Original Assignee
Hitachi Energy Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Energy Ltd filed Critical Hitachi Energy Ltd
Priority to PCT/EP2022/071540 priority Critical patent/WO2024027891A1/fr
Publication of WO2024027891A1 publication Critical patent/WO2024027891A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0388—Other aspects of conductors
    • H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts

Definitions

  • the present disclosure is related to a method for attaching a terminal to a metal substrate structure for a semiconductor power module with an isolating layer .
  • the present disclosure is further related to a semiconductor power module for a semiconductor device .
  • EP0645815 A2 describes a high power module containing high power, high frequency semiconductor switching devices and methods of operating the same .
  • the high power module incorporates compositional , geometrical and electrical symmetry .
  • the high power module also includes short internal leads , special IC chip substrates , trimmable gate lead resistances , a special composite metal/ceramic baseplate and a special terminal conductor overlap .
  • Terminals are attached to the insulated metal substrate and there is a need for a reliable connection of the terminals on the insulated metal substrate .
  • terminals can be soldered or glued on substrate .
  • a welding process can be critical for the substrate structure .
  • corresponding terminals are connected to a top metalli zation using welding techniques to provide j oining connections . This can be critical with respect to a stable process on the substrates with a resin isolation sheet below the metalli zation .
  • the welding process can lead to damages of the substrate structure and for example ultrasonic welding provides a strong impact of thermal , mechanical , and thermomechanical stress on the substrate structure due to friction and pressure between a terminal foot and the substrate .
  • a resin sheet is strongly endangered by deformation and crack formation .
  • Corresponding failure modes can occur when applying ultrasonic welding of terminal feet on a circuit metalli zation of an insulated metal substrate .
  • the method for attaching a terminal to a metal substrate structure for a semiconductor power module comprises providing at least one terminal with a terminal body and a terminal foot and providing the metal substrate structure with a metal top layer, a metal bottom layer and an isolating layer arranged between the metal top layer and the metal bottom layer .
  • the method further comprises providing at least one blind hole passing the metal bottom layer and the isolating layer, such that at least one free-standing portion of the metal top layer is available .
  • the method further comprises coupling the at least one terminal to the at least one free-standing portion of the metal top layer of the metal substrate structure by means of welding, so that failure modes due to welding terminal feet on the metalli zation are avoided .
  • the terminals can reali ze main and/or auxiliary terminals made of copper or copper alloy and are welded, e . g . ultrasonic welded and/or laser welded or other applicable welding methods , to the circuit metalli zation of the insulated metal substrate .
  • the terminal foot can have a thickness of 0 . 25- 2 . 0 mm .
  • the substrate top surface and/or the terminal foot may be coated by a metal layer, e . g . made from nickel , silver, and/or gold .
  • ultrasonic welding with an ultrasonic welding head or laser welding with a laser beam is used favorable .
  • the above mentioned welding head is also known as sonotrode .
  • the blind hole in the metal bottom layer and in the isolating resin layer is an intentionally formed cavity .
  • the blind hole enables protection of the isolating layer against mechanical and thermal impact introduced by ultrasonic welding and/or laser welding and reali zes a free-standing portion of a circuit metalli zation of the metal top layer beneath the terminal .
  • the blind hole provides a space such that propagation of mechanical and thermal stress into the isolating layer is reduced .
  • Positions on the insulated metal substrate , where the terminal is mounted, are typically less critical for heat dissipation .
  • No blind holes are available on positions , which are critical with respect to thermal issues e . g . directly under a chip generating strong heat dissipation .
  • a counter element may be applied to the open backside of the free-standing portion of the circuit metalli zation to provide mechanical support .
  • the use of a counter element may be especially needed in welding processes , where the metal substrate is exposed to strong mechanical impact like pressure and vibrations as it typically occurs in ultrasonic welding .
  • the counter element may also provide an improved heat dissipation reducing lateral heat flow in the circuit metalli zation and in the surrounding substrate structure .
  • the use of an at least temporary protection of the chips or other module structures against particles generated by the welding process may be considered .
  • a corresponding protection may be reali zed by a coating of sensible structures e . g . by resin material .
  • the blind holes can be filled with epoxy resin or other electrically isolating material .
  • the material used for filling may contain any filler material like particles or fibers for improved mechanical and thermal performance .
  • the filling process may be done by e . g . dispensing or inj ection . Due to the described method reali zation of ultrasonic welded and/or laser welded j oining connections on an insulated metal substrate are possible which can contribute to a stable and reliable functioning of a semiconductor power module even for high voltage power module applications .
  • the method contributes to secure attachment of terminals on insulated metal substrates by ultrasonic welding and/or laser welding and/or any other applicable welding method with a reduced damage risk to the isolating layer, for example .
  • the ultrasonic welding and/or laser welding provides an improved reliability of ultrasonic welding interface and/or laser welding interface towards thermal load cycles compared with soldered or glued j oining connections , improved thermal conduction from interface , ease manufacturability and throughput . Due to the blind hole through the metal bottom layer and the isolating layer it is possible to use ultrasonic welding and/or laser welding as an established technology also for insulated metal substrate structures . There is no need to redesign housings or terminals .
  • the described method for manufacturing a metal substrate structure with one or more attached terminals it is possible to counteract the aforementioned adverse ef fects due to the speci fically introduced blind hole through the metal bottom layer and the isolating layer .
  • the one or more blind holes in the metal substrate structure damp or reduce the mechanical and thermal impact of welding of terminals on an insulated metal substrate structure causing severe damage of the underlying isolating layer in the vicinity of the welding connection .
  • a risk of crack or damage formation in the isolating layer and delamination of the metal top layer can be reduced .
  • the blind hole provides a space such that propagation of thermal , mechanical , and thermomechanical stress on the substrate structure is reduced, especially into the isolating layer .
  • a stable semiconductor power module is feasible that enables reliable functioning even for high voltage power module applications in a voltage range of 0 . 5 kV up to 10 . 0 kV, for example .
  • the described method also allows to manufacture metal substrate structures and semiconductor power modules that can be applied to miscellaneous products , for example low voltage industrial and automotive products operating in a voltage range of 0 . 5 kV or below .
  • the one or more terminals can be welded directly onto a surface of the metal top layer to form a direct copper-to-copper contact , for example .
  • the present disclosure is related to welding, e . g . ultrasonic welding and/or laser welding of power and auxiliary terminals on insulated metal substrates or insulated metal baseplates , but also on substrate structures basing on alternative metal substrate structure technologies , like stamped and molded metal substrate structures .
  • the insulated metal substrate comprises a relative thick metal base or bottom layer made of aluminum and/or copper and/or corresponding alloys , for example .
  • the insulated metal substrate further comprises an isolating sheet basing on resin material which form the resin layer, and a circuit metalli zation made of aluminum and/or copper and/or corresponding alloys forming the metal top layer .
  • the resin material used for the isolating sheet is typically a thermosetting resin containing a heat conductive filler material or a thermoplastic resin .
  • the described metal substrate structure can be manufactured by the described embodiments of the method and as a result of that the described semiconductor power module comprises an embodiment of the metal substrate structure
  • described features and characteristics of the method are also disclosed with respect to the metal substrate structure and the semiconductor power module and vice versa .
  • the present disclosure comprises several aspects , wherein every feature described with respect to one of the aspects is also disclosed herein with respect to the other aspect , even i f the respective feature is not explicitly mentioned in the context of the speci fic aspect .
  • Figure 1 an embodiment of a terminal attached to a metal substrate structure of a semiconductor power module in a side view
  • Figure 4 an embodiment of the terminal foot being attached to a metal substrate structure with respect to the blind hole in a respective top view
  • Figure 5 a flow chart for a method for attaching an embodiment of the terminal to the metal substrate structure .
  • Figure 1 illustrates a side view of a terminal 4 attached to a metal substrate structure 3 of a semiconductor power module 10 for a semiconductor device .
  • the semiconductor power module 10 comprises the metal substrate structure 3 with a metal top layer 17 , a metal bottom layer 19 and an isolating layer 18 .
  • the isolating layer 18 is arranged between the metal top layer 17 and the metal bottom layer 19 with respect to a stacking direction A.
  • the metal substrate structure 3 further comprises at least one blind hole 7 , with a diameter d_bh of the circumscribed circle of the blind hole 7 , passing the metal bottom layer 19 and the isolating layer 18 . Therefore at least one freestanding portion 171 of the metal top layer 17 is available .
  • the terminal 4 and the free-standing portion 171 of the metal top layer 17 are intended to be connected via a welding connection 45 , with a diameter d_wc of the circumscribed circle of the welding connection 45 , for example by means of ultrasonic welding with an ultrasonic welding head 6 (not shown in the figure ) and/or by means of laser welding with a laser beam 60 (not shown in the figure ) .
  • the freestanding portion 171 of the metal top layer 17 and the terminal 4 are materially bonded .
  • the diameter d_wc of the circumscribed circle of the welding connection 45 is smaller than or equal to the diameter d_bh of the circumscribed circle of the blind hole 7 .
  • the at least one blind hole 7 is at least partially filled with a filling material 12 comprising a dielectric material , like epoxy resin, thermoplastic resin, or any other electrically isolating material .
  • the filling material 12 may contain filler for improved or adj usted thermal and/or mechanical properties , like particles or fibers .
  • the terminal 4 comprises an L-shape with a terminal body 41 extending mainly in the stacking direction A and a terminal foot 42 extending mainly in the lateral direction B .
  • the lateral direction B is substantially perpendicular to the stacking direction A.
  • the terminal comprises an U-shape with two terminal bodies 41 extending mainly in the stacking direction A and a terminal foot 42 extending mainly in the lateral direction B.
  • the terminal 4 comprises copper, aluminum and/or a corresponding alloy and may realize a main or an auxiliary terminal of the semiconductor power module 10.
  • the terminal foot 42 forms a plate with a thickness of 0.5 mm up to 2.0 mm with respect to the stacking direction A.
  • the terminal foot 42 can be partially or completely thinned comprising a thickness of 0.5 mm or less.
  • the terminal foot 42 has a thickness between 0.25-2.0 mm.
  • the terminal foot 42 comprises a structure prepared for improved ultrasonic welding and/or laser welding.
  • a welding structure can be realized by a roughed or thinned area, by one or more slots, grooves, recesses and/or holes in the terminal foot 42 of the terminal 4 (see figure 2) .
  • Such a welding structure can be prepared on a top and/or bottom side 43, 44 of the respective terminal 4.
  • Specific terminal structures can beneficially affect the ultrasonic welding process and/or the laser welding process and can contribute to the formation of the materially bonding welding joint. Especially by a reduced welding power, which further reduces thermal and mechanical impact of a welding process.
  • the complete terminal foot 42 is formed thinner than the main body 41 of the terminal 4.
  • a range for the thickness of the thinned terminal foot 42 could be between 0.3 and 0.8 times the thickness of the terminal main body 41.
  • the welding process is done on such thinner portions.
  • an ultrasonic welding process is provided with reduced stress.
  • the laser energy needed to realize a laser welded connection is reduced due to lower amount of metal to be molten and a reduced lateral heat dissipation results .
  • the terminal 4 can comprise a first coating layer 5 which partially or completely covers a top surface 43 of the terminal foot 42 ( see figure 3 ) .
  • the coating 5 is , for example , an anti-reflection coating that is configured to face the impinging laser beam 60 (not shown in the figure ) during laser welding and improves the ef ficiency of the irradiation with the laser beam 60 , for example .
  • the terminal 4 can further comprise a second coating layer 9 (not shown in the figure ) which partially or completely covers a bottom surface 44 of the terminal 4 .
  • the first and second coating layers 5 , 9 can beneficially af fect the ultrasonic welding process and/or the laser welding process .
  • the first and second coating layers 5 , 9 can e . g . protect the surfaces of the terminal 4 from oxidation and may be made of or comprise a noble metal , such as nickel , gold, silver, and/or other metals .
  • the lower second coating layer 9 may also be useful for attaching the terminal 4 to the metal top layer 17 supporting any kind of welding process .
  • Such speci fications for the material of the j oining partners can contribute to a secure and reliable welding process .
  • a thickness of the isolating layer 18 is between 100-200 pm .
  • a thickness of the circuit metalli zation that is formed by the metal top layer 17 is between 150-500 pm .
  • a thickness of the metal bottom layer 19 which may reali ze a baseplate can be between 2-5 mm and may also be configured to dissipate heat from the metal substrate structure 3 and the semiconductor power module 10 .
  • the isolating layer 18 can comprise an epoxy resin material , but also another thermosetting resin or other types of resin like thermoplastic resin is possible .
  • the resin material may comprise filler like inorganic particles or fibers to improve heat dissipation and isolation behavior .
  • the isolating layer 18 forms a dielectric layer and can be reali zed as a resin sheet or a pre-preg sheet which is assembled between two metal plates on top and bottom forming the metal top layer 17 and the metal bottom layer 19 .
  • Such metalli zation sheets or plates are bonded to the insulation of the dielectric resin layer 18 by the lamination process , for example .
  • a required metalli zation structure of the metal top layer 17 can then be done by subsequent steps of masking and etching processes to locally remove conductive metal , creating the final metalli zation structure 17 .
  • the top metalli zation structure 17 can be formed by cutting or stamping, for example before the formation of the finished metal substrate structure 3 .
  • the isolating layer 18 can be formed by molding, for example by means of inj ection, trans fer or compression molding .
  • a molding substance reali zes a pumpable substance with predetermined material properties .
  • the pumpable substance is a liquid or viscous raw material of the resin layer to be formed .
  • the molding substance is an epoxy and/or ceramic based liquid .
  • the raw material of the isolating layer 18 may be a thermosetting or a thermoplastic resin material such as polyamide , PBT , PET .
  • the raw material of the isolating layer 18 comprises inorganic filler for improved thermal conductivity and/or GTE adj ustment with respect to the metal top layer 17 and/or the metal bottom layer 19 .
  • the molded isolating layer 18 comprises a resin based dielectric material with ceramic filling material , e . g . A12O3 , AIN, BN, S13N4 or SiO2 .
  • the isolating layer 18 is an epoxy with filler .
  • the isolating layer 18 can be also based on other materials suitable for trans fer, inj ection or compression molding or other applicable molding technologies such as bismaleimide , cyanate ester, polyimide and/or silicones .
  • the isolating layer 18 can include a ceramic material and/or hydroset material or a material combination of two or more of the aforementioned components .
  • the thickness of the isolating layer 18 has a value of 100 pm up to 200 pm .
  • the metal bottom layer 19 comprises copper and/or aluminum and/or a corresponding alloy .
  • the circuit metalli zation formed by the metal top layer 17 comprises copper and/or aluminum and/or a corresponding alloy .
  • the metal top layer 17 may be coated partially or completely .
  • a corresponding coating of the circuit metalli zation comprises a noble metal , such as nickel and/or gold and/or silver, and/or other metals .
  • the dimension and positioning of the welding connection 45 of the terminal foot above the blind hole 7 is shown in a top view in Fig . 4 .
  • the terminal foot 42 (not shown in Figure 4 ) can be positioned in a central or peripheral , of f-center position above the blind hole 7 .
  • the diameter of the circumscribed circle of the terminal foot 42 (not shown in Figure 4 ) can be greater or smaller than or equal to the diameter d_bh of the circumscribed circle of the blind hole 7 .
  • the shape of the terminal foot 42 (not shown in Figure 4 ) and the blind hole 7 can have any geometric shape , like square , rectangular, circular or other polygonal geometry .
  • the diameter d_wc of the circumscribed circle of the welding connection 45 of the terminal foot is less than or equal to the diameter d_bh of the circumscribed circle of the blind hole 7 .
  • the area of the welding connection 45 of the terminal foot is smaller than or equal to the cross-sectional area of the blind hole 7 .
  • No portion of the welding connection 45 is located above a portion of the isolating layer 18 (not shown in Figure 4 ) , even i f the terminal foot 42 (not shown in Figure 4 ) is positioned slightly of f-center with respect to the blind hole 7 .
  • Steps of the method for attaching the terminal 4 to the metal substrate structure 3 can follow the flow chart as shown in Figure 5 .
  • a step S I at least one terminal 4 is provided .
  • the terminal 4 can be provided comprising the first and/or the second coating layer 5 , 9 on its top and/or bottom surface of the terminal foot 43 , 44 .
  • the first coating layer 5 is an anti-reflection coating, for example , to improve the laser welding process .
  • the metal substrate structure 3 is provided with the metal top layer 17 , the metal bottom layer 19 and the isolating layer 18 arranged there between .
  • a coating layer may be also available on a surface of the metal substrate structure 3 at least locally, especially on the metal top layer 17 .
  • a step S3 the blind hole 7 through the metal bottom layer 19 and the isolating layer 18 is provided .
  • the blind hole 7 can already be provided during the manufacturing of the metal bottom layer 19 and the isolating layer 18 before step S I .
  • a counter element 8 is introduced in the blind hole 7 through the metal bottom layer 19 and the isolating layer 18 to provide mechanical support and/or improved heat dissipation during welding process .
  • the terminal 4 is welded to the freestanding portion 171 of the metal top layer 17 .
  • the terminal 4 is thereby coupled with the metal top layer 17 of the metal substrate structure 3 by means of ultrasonic welding with the ultrasonic welding head 6 and/or laser welding with the laser beam 60 or any other applicable welding method . Due to the welding process a welding j oint between the terminal 4 and the metal top layer 17 is formed .
  • the terminal 4 and the metal top layer 17 are firmly and materially bonded .
  • the anti-reflection coating 5 partially or completely covers the top surface 43 of the terminal 4 facing the impinging laser beam 60 and improves the laser welding process .
  • step S 6 the counter element 8 is removed from the blind hole 7 i f the counter element 8 was introduced in step S4 .
  • the blind hole 7 is filled with a filling material 12 comprising a dielectric material , like epoxy resin, thermoplastic resin or any other electrically isolating material .
  • a filling material 12 comprising a dielectric material , like epoxy resin, thermoplastic resin or any other electrically isolating material .
  • the insulated metal substrate 3 In contrast to a conventional substrate basing on a ceramic isolating sheet , the insulated metal substrate 3 consists of a relative thick metal base 19 comprising aluminum and/or copper and/or a corresponding alloy, an isolating layer 18 basing on resin material , and a circuit metalli zation 17 comprising aluminum and/or copper and/or a corresponding alloy .
  • the resin material used for the isolating layer 18 is typically an epoxy resin or other thermosetting resin containing a heat conductive inorganic filler material .
  • One advantageous component of such a filler material may be ceramic particles prepared from aluminum nitride (AIN) , silicon nitride ( S13N4 ) , boron nitride (BN) , and/or aluminum oxide (A12O3 ) .
  • AIN aluminum nitride
  • S13N4 silicon nitride
  • BN boron nitride
  • A12O3 aluminum oxide
  • the mechanical , thermal , and/or thermomechanical impact of the ultrasonic welding process and/or the laser welding process on the isolating layer 18 is reduced or suppressed by the implementation of the blind hole 7 through the metal bottom layer 19 and the isolating layer 18 of the metal substrate structure 3 .
  • the welding connection 45 is then prepared between the terminal foot 42 of the terminal 4 and the free-standing portion of the metal top layer 19 , such that the propagation of mechanical and thermal stress into the metal substrate structure 3 and thus into the isolating layer 18 is reduced and thus itsel f .
  • the blind hole 7 through the metal bottom layer 19 and the isolating layer 18 is provided before the ultrasonic welding and/or the laser welding of the main or auxiliary terminal 4 .
  • the ultrasonic welding process is performed in coordination with the terminal 4 , the blind hole 7 , the counter element 8 and the metal substrate structure 3 .
  • the ultrasonic welding process is performed with an ultrasonic frequency in the range of 10- 100 kHz , e . g . 20 kHz .
  • the ultrasonic welding process is performed with an amplitude of 10 pm up to 100 pm .
  • the ultrasonic welding process can be performed with a predetermined mechanical pressure of 100 N up to 1000 N acting on the terminal foot 42 .
  • the laser welding process can be configured to provide speci fic parameters to beneficially af fect the formation of the one or more welding j oints .
  • the laser beam 60 or a corresponding laser source used for laser welding can be configured to provide a power of 300 - 3000 W .
  • the laser beam or the laser source for laser welding can be configured to provide a traveling speed of 1-200 mm/ s guided along a top surface 43 of the at least one terminal 4 that faces the impinging laser beam 60 .
  • the welding does not have to be done only at one limited point and the laser spot of the laser beam providing the welding process can be moved with an aforementioned velocity to provide a j oining connection over a defined area .
  • the laser beam 60 can also be configured to oscillate with a predetermined frequency .
  • the laser spot position can oscillate or wobble with a frequency of up to 2 kHz .
  • Such a wobbling may present an oscillation of location of point of irradiation to prevent too strong local heating and may occur in addition to the laser movement mentioned above to beneficially af fect the welding process .
  • the described embodiments are related to ultrasonic welding and/or laser welding of power and auxiliary terminals 4 on insulated metal substrates or insulated metal baseplates as reali zed by the metal substrate structure 3 .
  • the insulated metal substrates can be prepared by lamination or molding technologies . It is also feasible on substrate structures basing on alternative insulated metal substrate technologies like stamped and molded metal substrates .
  • the ultrasonic welding and/or laser welding process is facilitated by the blind hole 7 through the metal bottom layer 19 and the isolating layer 18 of the metal substrate structure 3 .
  • the described embodiments of the method for attaching the terminal 4 and/or manufacturing the metal substrate structure 3 with one or more attached terminals 4 enable to reduce a risk of crack or damage formation in the isolating layer 18 by a reduction of the thermal , mechanical , and/or thermomechanical impact on the substrate structure .
  • a stable semiconductor power module 10 is feasible that enables reliable functioning even for high voltage power module applications in a voltage range of 0 . 5 kV up to 10 . 0 kV, for example .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

La présente invention concerne un procédé de fixation d'une borne (4) à une structure de substrat métallique (3) pour un module d'alimentation à semi-conducteur (10), qui consiste à fournir au moins une borne (4), et à munir la structure de substrat métallique (3) d'une couche supérieure métallique (17), d'une couche inférieure métallique (19) et d'une couche de résine isolante (18) agencée entre la couche supérieure métallique (17) et la couche inférieure métallique (19). Le procédé consiste en outre à ménager au moins un trou borgne (7), qui traverse la couche inférieure métallique (19) et la couche isolante (18), de telle sorte que la ou les bornes (4) sont positionnées sur la couche supérieure métallique (17) opposée au trou borgne (7) et que la ou les bornes (4) sont couplées à la couche supérieure métallique (17) par soudage.
PCT/EP2022/071540 2022-08-01 2022-08-01 Procédé de fixation d'une borne à une structure de substrat métallique pour un module d'alimentation à semi-conducteur et module d'alimentation à semi-conducteur WO2024027891A1 (fr)

Priority Applications (1)

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PCT/EP2022/071540 WO2024027891A1 (fr) 2022-08-01 2022-08-01 Procédé de fixation d'une borne à une structure de substrat métallique pour un module d'alimentation à semi-conducteur et module d'alimentation à semi-conducteur

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PCT/EP2022/071540 WO2024027891A1 (fr) 2022-08-01 2022-08-01 Procédé de fixation d'une borne à une structure de substrat métallique pour un module d'alimentation à semi-conducteur et module d'alimentation à semi-conducteur

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449653A (fr) * 1965-04-15 1966-05-06 Radiotechnique Perfectionnements aux plaquettes isolantes porteuses de circuits imprimés
US5065506A (en) * 1989-10-05 1991-11-19 Sharp Kabushiki Kaisha Method of manufacturing circuit board
EP0645815A2 (fr) 1993-09-07 1995-03-29 Delco Electronics Corporation Module de commutation à semi-conducteur de haute puissance
DE102007062202A1 (de) * 2007-12-21 2009-07-02 Continental Automotive Gmbh Beschreibung Verfahren zur Kontaktierung einer starren Leiterplatte mit einem Kontaktpartner und Anordnung aus starrer Leiterplatte und Kontaktpartner
DE102015221972A1 (de) * 2015-11-09 2017-05-11 Robert Bosch Gmbh Kontaktieranordnung für ein Leiterplattensubstrat und Verfahren zum Kontaktieren eines Leiterplattensubstrats

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EP0645815A2 (fr) 1993-09-07 1995-03-29 Delco Electronics Corporation Module de commutation à semi-conducteur de haute puissance
DE102007062202A1 (de) * 2007-12-21 2009-07-02 Continental Automotive Gmbh Beschreibung Verfahren zur Kontaktierung einer starren Leiterplatte mit einem Kontaktpartner und Anordnung aus starrer Leiterplatte und Kontaktpartner
DE102015221972A1 (de) * 2015-11-09 2017-05-11 Robert Bosch Gmbh Kontaktieranordnung für ein Leiterplattensubstrat und Verfahren zum Kontaktieren eines Leiterplattensubstrats

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