WO2024012160A1 - Module de cellules solaires ibc et son procédé de fabrication, et chaîne de modules de cellules solaires ibc - Google Patents
Module de cellules solaires ibc et son procédé de fabrication, et chaîne de modules de cellules solaires ibc Download PDFInfo
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- WO2024012160A1 WO2024012160A1 PCT/CN2023/101105 CN2023101105W WO2024012160A1 WO 2024012160 A1 WO2024012160 A1 WO 2024012160A1 CN 2023101105 W CN2023101105 W CN 2023101105W WO 2024012160 A1 WO2024012160 A1 WO 2024012160A1
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- battery
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- battery sheet
- solar cell
- sheet
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 claims abstract description 40
- 238000003466 welding Methods 0.000 claims description 115
- 239000010410 layer Substances 0.000 claims description 31
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 239000002313 adhesive film Substances 0.000 claims description 14
- 238000005538 encapsulation Methods 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 13
- 229920006280 packaging film Polymers 0.000 claims description 13
- 239000012785 packaging film Substances 0.000 claims description 13
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- 238000000034 method Methods 0.000 claims description 10
- 238000007731 hot pressing Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052709 silver Inorganic materials 0.000 abstract description 7
- 239000004332 silver Substances 0.000 abstract description 7
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- 230000008018 melting Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 241000887125 Chaptalia nutans Species 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention belongs to the technical field of solar cell components, and specifically relates to an IBC solar cell string, an IBC solar cell component and a manufacturing method thereof.
- the photovoltaic industry is developing rapidly under the energy crisis.
- the key to further promoting photovoltaic applications is to improve the photoelectric conversion efficiency of solar cells and reduce the production cost of cells.
- the positive and negative electrodes of IBC (Interdigitated back contact) solar cells are designed on the backlight surface of the battery, and there is no grid line obstruction on the front side, thus avoiding the obstruction of the front grid electrode of conventional cells.
- the optical loss caused increases the short-circuit current and conversion efficiency of the battery.
- the electrodes of traditional IBC solar cells are mainly composed of main grid lines and auxiliary grid lines.
- the auxiliary grid lines are used to collect current, and the main grid lines are used to collect the current collected by the auxiliary grid lines and export the current by welding with welding ribbons.
- main grid electrodes and auxiliary grid electrodes are generally made of screen-printed conductive silver paste, which requires a large amount of silver paste, resulting in high cost of solar cell modules.
- busbar-less cell technology emerged as the times require.
- Cells without main grid lines generally refer to conventional cells with the main grid lines removed and thin grid lines retained; this type of cell sheet can reduce the use of silver paste because it no longer requires main grid lines. Applying the busbar-less cell technology to IBC batteries to form busbar-less IBC batteries can greatly reduce the use of silver paste, thereby effectively reducing the production cost of IBC batteries.
- the emitter electrode and base electrode of IBC cells are designed on the back of the cell.
- the welding and interconnection of the cells on the component side are also performed on the back of the cell.
- the front and back of the cell are unevenly stressed.
- Traditional infrared welding The higher the temperature, the easier it is for the cells to warp after welding, which affects the component yield and is not conducive to the development of thin battery cells.
- the present invention provides an IBC solar cell module, a manufacturing method thereof, and an IBC solar cell string.
- the solar cell module includes a plurality of alternately arranged first battery sheets and second battery sheets, and the first battery sheet and the second battery sheet are The positive electrode fine grid lines and the negative electrode fine grid lines are evenly distributed on the back of the battery sheet, and the positive electrode fine grid lines and the negative electrode fine grid lines are alternately arranged and parallel to each other; the first battery sheet and the second battery sheet All are IBC solar cells without main grid;
- the positive and negative electrode thin grid lines of the adjacent first battery sheet and the second battery sheet are connected through conductive strips to achieve series connection of each battery sheet, wherein the conductive strips include parallel and alternately arranged third cells.
- a low-temperature welding wire and a second low-temperature welding wire are vertically connected to the first positive electrode thin grid line of the first battery sheet and the second negative electrode thin grid line of the second battery sheet.
- the second low temperature welding wire The low-temperature welding wire is vertically connected to the first negative electrode thin grid line of the first battery sheet and the second positive electrode thin grid line of the second battery sheet.
- the number of first low-temperature welding wires and second low-temperature welding wires of the conductive strip is equal, and the first low-temperature welding wire and the second low-temperature welding wire Both extend along the arrangement direction of the battery sheets, and the first low-temperature welding wire and the second low-temperature welding wire are alternately distributed along the vertical direction of the arrangement direction of the battery sheets.
- the positive and negative thin grid lines of the first cell sheet and the second cell sheet are along the vertical direction of the arrangement direction of the cell sheets. extending upward, and the positive electrode fine grid lines and the negative electrode fine grid lines of the first battery sheet and the second battery sheet are staggered along the arrangement direction of the battery sheets.
- solder paste solder joints are provided on predetermined areas of the positive and negative electrode thin grid lines of the first cell sheet and the second cell sheet, wherein, the first low-temperature welding wire is vertically connected to the first positive electrode thin grid line of the first battery sheet and the second negative electrode thin grid line of the second battery sheet through the solder paste solder joint; the third Two low-temperature welding wires are vertically connected to the first negative electrode thin grid line of the first battery sheet and the second positive electrode thin grid line of the second battery sheet through the solder paste solder joint.
- the positive and negative electrode thin grid lines of the first cell sheet and the second cell sheet opposite to the area outside the predetermined area Coated with insulating glue wherein the first low-temperature welding wire passes through the insulating glue to avoid formation with the first negative electrode fine grid line of the first battery sheet and the second positive electrode fine grid line of the second battery sheet Contact; the second low-temperature welding wire passes through the insulating glue to avoid contact with the first positive electrode thin grid line of the first battery sheet and the second negative electrode thin grid line of the second battery sheet.
- the conductive tape further includes a base layer and an adhesive layer, wherein the adhesive layer is laminated on the base layer, and the first The low temperature welding wire and the second low temperature welding wire are fixed on the adhesive layer.
- the main grid-less IBC solar cell module further includes a front glass, a first encapsulating adhesive film, a second encapsulating adhesive film and a backsheet layer, wherein , the first encapsulating film covers the battery front side of the first battery sheet and the second battery sheet; the conductive tape covers the battery back side of the first battery sheet and the second battery sheet; The second encapsulation film covers the conductive tape; the front glass is disposed on the first encapsulation film, and the backplane layer is disposed on the second encapsulation film.
- an IBC solar cell string includes a plurality of the above-mentioned IBC solar cell modules, and the IBC solar cell modules are connected in parallel.
- a method for manufacturing an IBC solar cell module includes:
- first low-temperature welding wires and second low-temperature welding wires that are parallel to each other and alternately arranged on the adhesive layer to form a conductive strip
- the first low-temperature welding wire is vertically connected to the first positive electrode thin grid line of the first battery piece and the second negative electrode thin grid line of the second battery piece, and the second low-temperature welding wire Vertically connected to the first negative electrode thin grid line of the first battery sheet and the second positive electrode thin grid line of the second battery sheet to achieve series connection of each battery sheet; wherein, the first battery sheet and the second battery sheet
- the positive and negative electrode fine grid lines of the two battery sheets both extend in the vertical direction of the arrangement direction of the battery sheets, and the positive electrode fine grid lines and the negative electrode fine grid lines of the first battery sheet and the second battery sheet extend along
- the cells are staggered in the arrangement direction of the cells, and the first cells and the second cells are both main grid-less IBC solar cells.
- the manufacturing method further includes:
- the battery strings are interconnected on the first packaging film according to the component circuit layout, the front side of the battery sheet is in contact with the first packaging film, the first packaging film is laminated on the front glass, and then the second packaging film is The film and backplane layers are laminated on the battery string in sequence, and the second encapsulating adhesive film and the base layer of the conductive tape Contact, the backplane layer is in contact with the second packaging film;
- the stacked structures are laminated to form an integrated battery module structure.
- the IBC solar cell module provided by the present invention replaces the main grid wires on the back of the IBC cells by using low-temperature welding wire on the conductive tape to realize interconnection welding and current collection between the IBC cells, thereby eliminating the need for conventional IBC cells.
- the main grid lines in the chip reduce the usage of silver paste, which in turn helps reduce the manufacturing cost of IBC solar cell modules.
- by forming multiple low-temperature welding wires on the conductive tape it is beneficial to shorten the transmission distance of the current and reduce the series resistance of the cells, thereby improving the efficiency of the solar cell module; and the greater the number of low-temperature welding wires, the more It is conducive to improving the crack tolerance of cells, thereby conducive to improving the performance of solar cell modules.
- the manufacturing method of IBC solar cell modules provided by the present invention adopts laminated low-temperature welding to bond and fix the IBC cells to the conductive tape, which is beneficial to alleviating the uneven welding stress caused by conventional infrared welding.
- the resulting cells will be warped, which will help reduce the fragmentation rate of the cells and improve the module yield.
- Thinner silicon wafers can be used to further reduce the cost of battery components.
- Figure 1 is a schematic structural diagram of an IBC solar cell module according to an embodiment of the present invention.
- Figure 2 is a schematic structural diagram of a cell sheet of an IBC solar cell module according to an embodiment of the present invention
- Figure 3 is a schematic structural diagram of a conductive strip of an IBC solar cell module according to an embodiment of the present invention.
- Figure 4 is a front view of another conductive strip of an IBC solar cell module according to an embodiment of the present invention.
- Figure 5 is a schematic diagram of an arrangement and installation of cells of an IBC solar cell module according to an embodiment of the present invention.
- Figure 6 is a schematic diagram of another embodiment of the arrangement and installation of cells in an IBC solar cell string according to an embodiment of the present invention.
- FIG. 7 is a flow chart of a method of manufacturing an IBC solar cell module according to an embodiment of the present invention.
- the term "includes” and variations thereof represent an open term meaning “including, but not limited to.”
- the terms “based on”, “according to”, etc. mean “based at least in part on”, “based at least in part on”.
- the terms “one embodiment” and “an embodiment” mean “at least one embodiment.”
- the term “another embodiment” means “at least one other embodiment”.
- the terms “first”, “second”, etc. may refer to different or the same object. Other definitions may be included below, whether explicit or implicit. The definition of a term is consistent throughout this specification unless the context clearly dictates otherwise.
- the welding and interconnection between the battery sheets to form the battery components are all done on the back of the battery, which can easily lead to uneven stress on the front and back of the battery.
- cell warping is prone to occur, which affects component yield and is not conducive to the development of thin battery cells.
- the positive and negative electrode interconnections of the busbarless IBC battery belong to the same side interconnection, and the conventional wire film composite method cannot meet the requirements.
- an IBC solar cell module and a manufacturing method thereof are provided according to embodiments of the present invention.
- IBC solar array string IBC solar array string.
- the IBC solar cell module, its manufacturing method, and the IBC solar cell string according to embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
- FIG. 1 is a schematic structural diagram of an IBC solar cell module according to an embodiment of the present invention.
- the IBC solar cell module includes: a front glass 10 , a first encapsulating film 20 , a plurality of cells 30 , a conductive tape 40 , a second encapsulating film 50 and a backsheet layer 60 .
- the first encapsulation adhesive film and the second encapsulation adhesive film are EVA or POE or co-extruded POE formed by co-extrusion of EVA and POE.
- the backplane layer is a glass backplane or a transparent backplane or a white backplane or a black backplane or black inside and outside. White back panel.
- the plurality of battery sheets 30 include a plurality of first battery sheets and second battery sheets that are alternately arranged.
- the first battery sheets and the second battery sheets may be alternately arranged in the form of whole sheets or slices.
- the cell spacing between the plurality of battery cells 30 is arranged using a small spacing or a negative spacing as required. By adopting a cell arrangement design with small or negative spacing, it is helpful to further improve the efficiency of solar cell modules.
- the first encapsulating film 20 covers the battery fronts of the first battery sheet and the second battery sheet;
- the conductive tape 40 covers the battery surfaces of the first battery sheet and the second battery sheet.
- the second encapsulation film 50 covers the conductive tape 40;
- the front glass 10 is disposed on the first encapsulation film 20, and the backplane layer 60 is disposed on the second encapsulation film 50 on.
- FIG. 2 is a schematic structural diagram of a cell sheet of an IBC solar cell module according to an embodiment of the present invention. Refer to FIG. 2 .
- the battery sheet 30 may be a first battery sheet or a second battery sheet.
- the first cell sheet and the second cell sheet are both busbarless IBC solar cells.
- the back side of the battery sheet 30 is provided with fine grid lines 31 that are evenly distributed and parallel to each other.
- the fine grid lines 31 include positive electrode fine grid lines and negative electrode fine grid lines.
- first positive grid line and the first negative grid line of the first battery sheet are evenly distributed on the back side of the first battery sheet;
- the second positive grid line and the second negative electrode grid of the second battery sheet are The lines are evenly distributed on the back side of the second battery sheet.
- the positive and negative electrode thin grid lines of the first battery sheet and the second battery sheet are parallel to each other and arranged alternately.
- the positive and negative electrode thin grid lines of the first battery sheet and the second battery sheet both extend in the vertical direction along the arrangement direction of the battery sheets 30 , and the first battery sheet and the second battery sheet The positive electrode fine grid lines and the negative electrode fine grid lines of the second battery sheet are alternately distributed along the arrangement direction of the battery sheets 30 .
- Figure 3 is a schematic structural diagram of a conductive strip of an IBC solar cell module according to an embodiment of the present invention.
- the conductive tape 40 includes a low-temperature welding wire 41 , an adhesive layer 42 and a base layer 43 .
- the low-temperature welding wire 40 includes a first low-temperature welding wire and a second low-temperature welding wire, and the first low-temperature welding wire and the second low-temperature welding wire are arranged parallel to each other and alternately.
- the number of the first low-temperature welding wire and the second low-temperature welding wire is equal, and the number of the first low-temperature welding wire and the second low-temperature welding wire is N>9.
- the first low-temperature welding wire and the second low-temperature welding wire both extend along the arrangement direction of the battery sheets 30 .
- the first low-temperature welding wire and the second low-temperature welding wire are alternately distributed along the vertical direction of the arrangement direction of the battery sheets 30 .
- the adhesive layer 42 is laminated on the base layer 43 , and the low-temperature welding wire 41 is disposed on the adhesive layer 42 .
- the adhesive layer 42 is made of polyolefin material, the melting point of the adhesive layer 42 is 70°C to 120°C, and the thickness is 75 ⁇ m to 200 ⁇ m.
- the maximum fluidity of the adhesive layer 42 is lower than that of the first encapsulating adhesive film 20 and the second encapsulating adhesive film 50 . Both sides of the adhesive layer 42 have viscosity, so that one side can be bonded to the low-temperature welding wire and the other side can be bonded to the base layer 43 .
- the thickness of the base layer 43 is 12 ⁇ m to 25 ⁇ m, and the melting point is greater than 150°C.
- the base layer 43 is a polyolefin adhesive film, and a water-blocking molecular material is added to the base layer.
- the base layer 43 has no fluidity at the lamination temperature, thereby ensuring that the low-temperature welding wire 41 will not be twisted or deflected during the lamination process, and at the same time preventing the second encapsulating adhesive film 50 from being distorted during the lamination process.
- the medium flows between the low-temperature welding wire 41 and the battery piece 30, causing the insulation between the battery piece 30 and the low-temperature welding wire 41 to cause the problem of excessive series resistance and the short-circuit problem caused by the offset of the welding strip, which has a water-blocking effect. , prevent water vapor from entering the cells and improve the aging resistance of solar cell modules.
- the coating of the low-temperature welding wire 41 is selected from tin-bismuth-silver alloy or tin-bismuth alloy with a melting point of 110°C to 145°C.
- the cross section of the low temperature welding wire 41 is circular or rectangular. When the cross section is circular, the diameter of the circular cross section is 0.15mm ⁇ 0.3mm. When the cross section is rectangular, the thickness of the low-temperature welding wire 41 is 0.12 mm to 0.25 mm, and the width is 0.4 mm to 0.6 mm.
- the first low-temperature welding wire is vertically connected to the first positive electrode thin grid line of the first battery sheet and the second negative electrode thin grid line of the second battery sheet
- the second low-temperature welding wire is connected to The first negative electrode thin grid line of the first battery sheet and the second positive electrode thin grid line of the second battery sheet are vertically connected.
- the first positive electrode thin grid line of the first battery piece can be connected to the second negative electrode thin grid line of the adjacent second battery piece. , or connect the first negative electrode thin grid line of the first battery piece to the second positive electrode thin grid line of the adjacent second battery piece, so that the polarities on the two adjacent battery pieces 30 are opposite.
- the positive and negative electrode thin grid lines are electrically connected in sequence to realize the series connection of each battery piece 30.
- the usage amount of silver paste can be reduced by more than 65%.
- the low-temperature welding wires 41 are formed on the conductive tape 40, it is beneficial to shorten the transmission distance of the current and reduce the series resistance of the cell 30, which is beneficial to improving the efficiency of the solar cell module; in addition, the low-temperature The greater the number of welding wires 41, the more conducive to improving the crack tolerance of the cell sheet 30, thereby improving the performance of the solar cell module.
- solder paste is provided on a predetermined area of the fine grid lines 31 of the battery piece 30 .
- solder joint 32 wherein the first low-temperature solder wire passes through the solder paste solder joint 32 and is perpendicular to the first positive electrode fine grid line of the first battery sheet and the second negative electrode fine grid line of the second battery sheet. Connection; the second low-temperature solder wire is vertically connected to the first negative electrode thin grid line of the first battery sheet and the second positive electrode thin grid line of the second battery sheet through the solder paste solder joint 32.
- the height of the solder paste solder joint 32 is 20 ⁇ m to 100 ⁇ m.
- the thin grid lines 31 of the battery sheet 30 opposite to the area outside the predetermined area are coated with insulating glue 33 , wherein the first low-temperature welding wire passes through the insulating glue 33 To avoid contact with the first negative electrode fine grid line of the first cell sheet and the second positive electrode fine grid line of the second cell sheet; the second low-temperature welding wire passes through the insulating glue 33 to avoid contact with the The first positive electrode thin grid line of the first battery sheet and the second negative electrode thin grid line of the second battery sheet form contact.
- the positive electrode fine grid lines and the negative electrode fine grid lines of the first battery sheet and the second battery sheet are alternately distributed along the arrangement direction of the battery sheet 30, by using the insulating glue 33, it is possible to avoid the same problem.
- a low-temperature welding wire 41 comes into contact with the thin grid lines 31 of different polarities of the same battery piece 30, causing a short circuit in the battery.
- multiple groups of adjacent positive and negative electrodes with opposite electrode polarities can be formed in the vertical direction of the extension direction of the thin gate line 31, wherein the positive and negative electrodes in each group are The positive pole (or negative pole) is marked with MARK point M.
- first thin lines perpendicular to the thin grid lines 31 are provided at both ends of the edges of the battery sheets 30 or segments of the battery sheets 30 .
- the first thin grid line 34 is located between the thin grid line 31 and the solder paste solder joint 32 , and/or the insulating glue 33 .
- the length of the first thin grid line 34 is ⁇ 10 mm.
- the conductive tape 40 further includes a plurality of regularly arranged holes 44 , and the holes 44 penetrate the low-temperature welding wire 41 .
- the hole 44 may be circular or rectangular.
- Figure 5 is an arrangement and installation of cells of an IBC solar cell module according to an embodiment of the present invention. Schematic diagram of the embodiment. In order to simplify the explanation of the arrangement and installation of the cells in the IBC solar cell module, the front glass 10, the first encapsulating film 20 and the second encapsulating film in the IBC solar cell module are omitted in Figure 5.
- the adhesive film 50 and the backsheet layer 60 only indicate the cells 30 and conductive strips 40 in the IBC solar cell module.
- adjacent battery sheets 30 are connected through the conductive strips 40 to realize series connection of each battery sheet 30 .
- an IBC solar cell string includes a plurality of the above-mentioned IBC solar cell modules, and the IBC solar cell modules are connected in parallel.
- the IBC solar cell string also includes a bus belt 70, through the bus belt 70, the IBC solar cell components are connected in parallel to obtain the IBC solar cell string.
- FIG. 6 is a schematic diagram of an arrangement and installation of cells of an IBC solar cell string according to an embodiment of the present invention.
- the front glass 10, the first encapsulating film 20, the second encapsulating film 50 and the backsheet layer 60 of the IBC solar cell module in the IBC solar cell string are omitted in Figure 6, and only the The cells 30, conductive strips 40 and bus strips 70 in the IBC solar cell string.
- the adjacent battery pieces 30 in the IBC solar cell module are connected through the conductive strip 40 to realize the series connection of each cell piece 30 , and the IBC solar cell modules are connected through the busbar. Take 70 for parallel connection.
- FIG. 7 is a flow chart of a method of manufacturing an IBC solar cell module according to an embodiment of the present invention. Referring to Figure 7, the manufacturing method includes step S610, step S620, step S630 and step S620.
- step S610 several first low-temperature welding wires and second low-temperature welding wires that are parallel to each other and alternately arranged are formed on the adhesive layer 42 to form the conductive strip 40 .
- first low-temperature welding wires and the second low-temperature welding wires are positioned parallel to each other at equal intervals and alternately placed on the adhesive layer 42 , and then the first low-temperature welding wires and the second low-temperature welding wires are pressed together by hot pressing.
- the second low-temperature welding wire is thermally pressed with the adhesive layer 42 and the base layer 43 to form the conductive strip 40 .
- the manufacturing method further includes:
- the conductive strip 40 is punched to form a hole 44 penetrating the first low temperature welding wire and/or the second low temperature welding wire.
- step S620 a plurality of first battery sheets and a number of second battery sheets are arranged sequentially on the conductive tape 40, and hot pressing is performed (hot pressing temperature: 120-250°C, time: 5-15 seconds), so as to convert the plurality of first battery sheets and second battery sheets on the conductive tape 40.
- the first battery sheet and the second battery sheet are bonded and fixed with the conductive tape to form a battery string; wherein the first low-temperature welding wire and the first positive electrode thin grid line of the first battery sheet and the second
- the second negative electrode thin grid line of the battery sheet is vertically connected, and the second low-temperature welding wire is vertically connected to the first negative electrode thin grid line of the first battery sheet and the second positive electrode fine grid line of the second battery sheet. , realizing the series connection of each battery piece 30.
- the manufacturing method before arranging a plurality of first battery sheets and second battery sheets on the conductive tape 40 in sequence, the manufacturing method further includes:
- Solder paste solder joints 32 are formed on predetermined areas of the fine grid lines 31 of the battery sheet 30 , and are coated on the thin grid lines 31 of the battery sheet 30 opposite to areas outside the predetermined area. Insulating glue 33.
- the first low-temperature solder wire is vertically connected to the first positive electrode fine grid line of the first cell sheet and the second negative electrode fine grid line of the second cell sheet through the solder paste solder joint 32;
- the second low-temperature solder wire is vertically connected to the first negative electrode thin grid line of the first cell sheet and the second positive electrode thin grid line of the second cell sheet through the solder paste solder joint 32 .
- the conductive tape 40 is laid and fixed, the first battery sheets and the second battery sheets are alternately arranged and placed on the conductive tape 40 , and the battery back side of the battery sheet 30 is aligned with the battery sheet 30 .
- the conductive tape 40 is in contact, wherein the solder paste solder joints 32 on the back of the battery sheet 30 correspond to the first low-temperature welding wire and/or the second low-temperature welding wire, and then the battery sheet 30 is heated through a heating plate. Hot pressing is performed to bond and fix the battery sheet 30 and the conductive tape 40 .
- step S630 the battery strings are interconnected on the first packaging film 20 according to the component circuit layout, the front side of the battery piece is in contact with the first packaging film 20, the first packaging film is laminated on the front glass 10, and then the The second encapsulating adhesive film 50 and the backplane layer 60 are laminated on the battery string in sequence.
- the second encapsulating adhesive film is in contact with the base layer 43 of the conductive tape 40
- the backplane layer is in contact with the second encapsulating adhesive film 50 .
- step S640 the stacked structures are laminated to form an integrated battery module structure, and the lamination temperature is 135°C to 150°C.
- EL testing is performed on the integrated battery structure to mainly detect defects such as battery splinters and short circuits.
- the IBC solar cell module uses low-temperature welding wire on the conductive strip to replace the main grid wires on the back of the IBC cells to realize interconnection welding and current collection between the IBC cells, thereby eliminating the need for conventional
- the main grid lines in IBC cells reduce the usage of silver paste, which in turn helps reduce the manufacturing cost of IBC solar cell modules.
- by forming multiple low-temperature welding wires on the conductive tape it is beneficial to shorten the transmission distance of the current and reduce the series resistance of the cells, thereby improving the efficiency of the solar cell module; and the greater the number of low-temperature welding wires, the more It is conducive to improving the crack tolerance of cells, thereby conducive to improving the performance of solar cell modules.
- the manufacturing method of IBC solar cell modules provided by the present invention adopts laminated low-temperature welding to bond and fix the IBC cells to the conductive tape, which is beneficial to alleviating the uneven welding stress caused by conventional infrared welding.
- the resulting cells will be warped, which will help reduce the fragmentation rate of the cells and improve the module yield.
- Thinner silicon wafers can be used to further reduce the cost of battery components.
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Abstract
L'invention concerne un module de cellule solaire IBC. Le module de cellule solaire comprend une pluralité de premiers éléments de batterie et une pluralité de seconds éléments de batterie qui sont agencées en alternance. Des lignes de grille fines positive et négative du premier élément de batterie adjacente et du second élément de batterie sont connectées au moyen d'une bande conductrice de façon à réaliser une connexion en série des éléments de batterie respectifs. La bande conductrice comprend des premiers filaments de soudure à basse température et des seconds filaments de soudure à basse température qui sont parallèles les uns aux autres et sont agencés en alternance. Les premiers filaments de soudure à basse température sont reliés verticalement à des premières lignes de grille fines positives du premier élément de batterie et des secondes lignes de grille fines négatives du second élément de batterie, et les seconds filaments de brasure à basse température sont connectés verticalement à des premières lignes de grille fines négatives du premier élément de batterie et des secondes lignes de grille fines positives du second élément de batterie. Dans le module de cellule solaire IBC, les lignes de grille principales des élements de batterie sont remplacées par les filaments de soudure à basse température, de telle sorte que la consommation de pâte d'argent peut être réduite, ce qui permet de réduire les coûts de production et de fabrication de batteries. De plus, un tel agencement permet de raccourcir la distance de transmission de courant, de réduire la résistance en série des éléments de batterie, et d'améliorer l'efficacité du module de cellule.
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CN202210821580.5 | 2022-07-12 | ||
CN202210821580.5A CN115172486B (zh) | 2022-07-12 | 2022-07-12 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
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PCT/CN2023/101105 WO2024012160A1 (fr) | 2022-07-12 | 2023-06-19 | Module de cellules solaires ibc et son procédé de fabrication, et chaîne de modules de cellules solaires ibc |
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CN115172486B (zh) * | 2022-07-12 | 2024-03-01 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
CN115548141A (zh) * | 2022-10-26 | 2022-12-30 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | 导电线膜和光伏电池组件 |
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WO2011011855A1 (fr) * | 2009-07-31 | 2011-02-03 | Day4 Energy Inc. | Procédé permettant dinterconnecter des piles solaires à contact arrière et module photovoltaïque employant ce dernier |
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CN115172486A (zh) * | 2022-07-12 | 2022-10-11 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
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CN102751361A (zh) * | 2012-07-25 | 2012-10-24 | 合肥海润光伏科技有限公司 | 背接触太阳能电池串及其制作方法 |
CN106960891A (zh) * | 2017-03-09 | 2017-07-18 | 杭州福斯特应用材料股份有限公司 | 一种光伏用透明复合膜及其制备方法与应用 |
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2022
- 2022-07-12 CN CN202210821580.5A patent/CN115172486B/zh active Active
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- 2023-06-19 WO PCT/CN2023/101105 patent/WO2024012160A1/fr unknown
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WO2011011855A1 (fr) * | 2009-07-31 | 2011-02-03 | Day4 Energy Inc. | Procédé permettant dinterconnecter des piles solaires à contact arrière et module photovoltaïque employant ce dernier |
CN104810423A (zh) * | 2015-04-24 | 2015-07-29 | 苏州中来光伏新材股份有限公司 | 新型无主栅高效率背接触太阳能电池和组件及制备工艺 |
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CN115172486A (zh) * | 2022-07-12 | 2022-10-11 | 青海黄河上游水电开发有限责任公司西宁太阳能电力分公司 | Ibc太阳能电池组件及其制作方法、ibc太阳能电池组串 |
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