WO2024009753A1 - Dispositif à semi-conducteur et unité de dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur et unité de dispositif à semi-conducteur Download PDF

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Publication number
WO2024009753A1
WO2024009753A1 PCT/JP2023/022739 JP2023022739W WO2024009753A1 WO 2024009753 A1 WO2024009753 A1 WO 2024009753A1 JP 2023022739 W JP2023022739 W JP 2023022739W WO 2024009753 A1 WO2024009753 A1 WO 2024009753A1
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Prior art keywords
switching element
semiconductor device
resin
main
control terminals
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PCT/JP2023/022739
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English (en)
Japanese (ja)
Inventor
大勝 梅上
裕太 大河内
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ローム株式会社
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Publication of WO2024009753A1 publication Critical patent/WO2024009753A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Definitions

  • the present disclosure relates to a semiconductor device and a semiconductor device unit.
  • Patent Document 1 discloses a conventional semiconductor device.
  • the semiconductor device described in Patent Document 1 includes a plurality of semiconductor elements (10) and a sealing resin (70) that covers these semiconductor elements.
  • Each of the plurality of semiconductor elements (10) is a switching element made of SiC.
  • the plurality of semiconductor elements (10) include a plurality of semiconductor elements 10A (first switching element) and a plurality of semiconductor elements 10B (second switching element).
  • the plurality of semiconductor elements 10A constitute an upper arm circuit
  • the plurality of semiconductor elements 10B constitute a lower arm circuit.
  • the plurality of semiconductor elements 10A are connected in parallel with each other
  • the plurality of semiconductor elements 10B are connected in parallel with each other.
  • the plurality of semiconductor elements 10A and the plurality of semiconductor elements 10B are connected in series. Since it is difficult to increase the area of a semiconductor element using SiC as a constituent material, as in the semiconductor device described in Patent Document 1, a plurality of semiconductor elements 10A are required depending on the current capacity required for the semiconductor device. , 10B are built in parallel.
  • An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device. Particularly, in view of the above-mentioned circumstances, one object of the present disclosure is to provide a semiconductor device that improves heat dissipation and is suitable for accommodating various current capacities.
  • a semiconductor device provided by the first aspect of the present disclosure includes only two switching elements and a sealing resin that covers the only two switching elements.
  • One of the only two switching elements is a first switching element and the other is a second switching element.
  • Each of the first switching element and the second switching element includes SiC as a constituent material.
  • the first switching element and the second switching element are connected in series, with the first switching element serving as an upper arm and the second switching element serving as a lower arm.
  • a semiconductor device unit provided by the second aspect of the present disclosure includes a plurality of semiconductor devices according to the first aspect of the present disclosure.
  • the plurality of semiconductor devices are combined with each other.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a perspective view of the semiconductor device according to the first embodiment of the present disclosure, viewed from the back side.
  • FIG. 3 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure, in which the sealing resin is shown with imaginary lines.
  • FIG. 4 is a plan view of FIG. 3 with the third conductive member omitted.
  • FIG. 5 is a front view showing the semiconductor device according to the first embodiment of the present disclosure, in which the sealing resin is shown with imaginary lines.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a diagram showing a circuit configuration of a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a perspective view of the semiconductor device according to the first embodiment of the present disclosure, viewed from the
  • FIG. 8 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to the first embodiment of the present disclosure.
  • FIG. 9 is a perspective view showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 10 is a front view showing the semiconductor device according to the first modification of the first embodiment, and shows the sealing resin with imaginary lines.
  • FIG. 11 is a perspective view showing a semiconductor device according to a second modification of the first embodiment.
  • FIG. 12 is a front view showing a semiconductor device according to a second modification of the first embodiment, and shows the sealing resin with imaginary lines.
  • FIG. 13 is a perspective view showing a semiconductor device according to a third modification of the first embodiment.
  • FIG. 9 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to the first embodiment of the present disclosure.
  • FIG. 9 is a perspective view showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 10 is a front view showing the semiconductor device according to
  • FIG. 14 is a front view showing a semiconductor device according to a third modification of the first embodiment, and shows the sealing resin with imaginary lines.
  • FIG. 15 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to a third modification of the first embodiment.
  • FIG. 16 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 17 is a right side view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 18 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to the second embodiment of the present disclosure.
  • FIG. 19 is a perspective view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 15 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to a third modification of the first embodiment.
  • FIG. 16 is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 17 is a right side view showing
  • FIG. 20 is a perspective view showing a semiconductor device unit including a plurality of semiconductor devices according to a third embodiment of the present disclosure.
  • FIG. 21 is a perspective view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 22 is a perspective view showing an example of a semiconductor device unit including a plurality of semiconductor devices according to the fourth embodiment of the present disclosure.
  • FIG. 23 is a perspective view showing another example of a semiconductor device unit including a plurality of semiconductor devices according to the fourth embodiment of the present disclosure.
  • FIG. 24 is a perspective view showing a semiconductor device according to a fifth embodiment of the present disclosure.
  • FIG. 25 is a perspective view of a semiconductor device according to a fifth embodiment of the present disclosure, viewed from the back side.
  • FIG. 26 is a perspective view showing a semiconductor device according to a modification of the fifth embodiment.
  • FIG. 27 shows a semiconductor device according to a modification of the fifth embodiment, and is a perspective view seen from the back side.
  • FIG. 28 is a circuit configuration diagram showing another configuration example of a semiconductor device according to the present disclosure.
  • a thing A is formed on a thing B and "a thing A is formed on a thing B” mean “a thing A is formed on a thing B” unless otherwise specified.
  • "something A is placed on something B” and “something A is placed on something B” mean "something A is placed on something B” unless otherwise specified.
  • First embodiment 1 to 7 show a semiconductor device according to a first embodiment of the present disclosure.
  • the semiconductor device A10 of this embodiment includes two switching elements 10, a conductive support 2, a support substrate 3, a plurality of control terminals 4, a first conduction member 51, a second conduction member 52, and a third conduction member 51. It includes a conductive member 53, a fourth conductive member 54, a sealing resin 7, a first joint shape J1, and a second joint shape J2.
  • FIG. 1 is a perspective view showing the semiconductor device A10.
  • FIG. 2 is a perspective view of the semiconductor device A10, viewed from the back side.
  • FIG. 3 is a plan view showing the semiconductor device A10, in which the sealing resin 7 is shown with imaginary lines.
  • FIG. 4 is a plan view of FIG. 3 with the third conductive member 53 omitted.
  • FIG. 5 is a front view of the semiconductor device A10, in which the sealing resin 7 is shown with imaginary lines.
  • FIG. 6 is a cross-sectional view taken along line VI-VI in FIG.
  • FIG. 7 is a diagram showing the circuit configuration of the semiconductor device A10.
  • the x direction is the left-right direction in the plan view of the semiconductor device A10 (see FIG. 3).
  • the y direction is the vertical direction in the plan view of the semiconductor device A10 (see FIG. 3).
  • One of the x directions is called the x1 direction, and the other x direction is called the x2 direction.
  • one of the y-directions is the y1 direction
  • the other of the y-directions is the y2-direction
  • one of the z-directions is the z1-direction
  • the other z-direction is the z2-direction.
  • plane view refers to when viewed in the z direction.
  • the z1 direction is sometimes referred to as top
  • the z2 direction is sometimes referred to as bottom.
  • the z direction corresponds to the "thickness direction” of the present disclosure
  • the x direction corresponds to the "first direction” of the present disclosure
  • the y direction corresponds to the "second direction” of the present disclosure.
  • the x1 direction corresponds to "one side of the first direction” of the present disclosure
  • the x2 direction corresponds to “the other side of the first direction” of the present disclosure
  • the y1 direction corresponds to "one side of the second direction” of the present disclosure
  • the y2 direction corresponds to the "other side in the second direction” of the present disclosure
  • the z1 direction corresponds to "one side in the thickness direction” of the present disclosure
  • the z2 direction corresponds to the "other side in the thickness direction” of the present disclosure. corresponds to "the other side in the horizontal direction”.
  • Each of the two switching elements 10 is an electronic component that becomes the functional center of the semiconductor device A10.
  • the semiconductor device A10 includes only two switching elements 10.
  • the constituent material of each switching element 10 is a semiconductor material mainly composed of SiC (silicon carbide).
  • Each switching element 10 is, for example, a power semiconductor chip having a switching function, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the two switching elements 10 are the same element.
  • Each switching element 10 is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.
  • Each switching element 10 has an element main surface 101 and an element back surface 102, as shown in FIG.
  • the element main surface 101 and the element back surface 102 are separated in the z direction.
  • the element main surface 101 faces the z1 direction
  • the element back surface 102 faces the z2 direction.
  • the semiconductor device A10 is configured as a half-bridge switching circuit.
  • the first switching element 10A serves as an upper arm
  • the second switching element 10B serves as a lower arm, which are connected in series.
  • the first switching element 10A is mounted on the conductive support 2, as shown in FIGS. 3 to 6.
  • the first switching element 10A is conductively bonded to the conductive support 2 (first conductive portion 2A to be described later) via a conductive bonding material 19.
  • the element back surface 102 faces the first conductive part 2A.
  • the second switching element 10B is mounted on the conductive support 2.
  • the second switching element 10B is conductively bonded to the conductive support 2 (second conductive portion 2B to be described later) via a conductive bonding material 19.
  • the element back surface 102 faces the second conductive part 2B.
  • the two switching elements 10 each have a first main surface electrode 11, a second main surface electrode 12, and a back electrode 13.
  • the configurations of the first main surface electrode 11, second main surface electrode 12, and back surface electrode 13 described below are common to each switching element 10.
  • the first main surface electrode 11 and the second main surface electrode 12 are provided on the element main surface 101.
  • the first main surface electrode 11 and the second main surface electrode 12 are insulated by an insulating film (not shown).
  • the back electrode 13 is provided on the back surface 102 of the element.
  • the first principal surface electrode 11 is, for example, a gate electrode, and a drive signal (eg, gate voltage) for driving the switching element 10 is input thereto.
  • the second main surface electrode 12 is, for example, a source electrode, through which a source current flows.
  • the back electrode 13 is, for example, a drain electrode, through which a drain current flows.
  • the back electrode 13 covers substantially the entire area of the back surface 102 of the element.
  • the back electrode 13 is made of, for example, Ag (silver) plating.
  • each switching element 10 switches between a conductive state and a cutoff state in accordance with this drive signal.
  • a current flows from the back electrode 13 (drain electrode) to the second main surface electrode 12 (source electrode), and in a cutoff state, this current does not flow.
  • Each switching element 10 performs a switching operation.
  • the semiconductor device A10 converts, for example, a DC voltage input to a first main terminal 512 and a third main terminal 532, which will be described later, into an AC voltage using the switching functions of the first switching element 10A and the second switching element 10B. AC voltage is output from the second main terminal 522.
  • the conductive support 2 supports two switching elements 10 (first switching element 10A and second switching element 10B).
  • the conductive support body 2 is bonded onto the support substrate 3 with a conductive bonding material 29 interposed therebetween.
  • the conductive support 2 together with the first conductive member 51, the second conductive member 52, the third conductive member 53, and the fourth conductive member 54, constitutes a path for the main current switched by the two switching elements 10.
  • the conductive support 2 includes a first conductive part 2A and a second conductive part 2B.
  • the first conductive part 2A and the second conductive part 2B are each plate-shaped block members made of metal. This metal is, for example, Cu (copper) or a Cu alloy.
  • the first conductive portion 2A and the second conductive portion 2B constitute a conduction path to the two switching elements 10.
  • the first conductive part 2A and the second conductive part 2B are each bonded onto the support substrate 3 via a conductive bonding material 29, as shown in FIG.
  • a first switching element 10A is bonded to the first conductive portion 2A via a conductive bonding material 19.
  • a second switching element 10B is bonded to the second conductive portion 2B via a conductive bonding material 19.
  • the constituent materials of the conductive bonding material 19 and the conductive bonding material 29 are not particularly limited, and include, for example, solder, metal paste material, or sintered metal.
  • the first conductive part 2A and the second conductive part 2B are spaced apart from each other in the x direction, as shown in FIGS. 3 to 6. In the examples shown in these figures, the first conductive part 2A is located further in the x1 direction than the second conductive part 2B.
  • the first conductive portion 2A and the second conductive portion 2B each have, for example, a rectangular shape in plan view.
  • the thickness (dimension in the z direction) of each of the first conductive part 2A and the second conductive part 2B is, for example, 2.0 mm to 5.0 mm (preferably about 3.0 mm).
  • the conductive support 2 has a main surface 201 and a back surface 202.
  • the main surface 201 and the back surface 202 are separated in the z direction, as shown in FIGS. 4 and 5.
  • the main surface 201 faces in the z1 direction, and the back surface 202 faces in the z2 direction.
  • the main surface 201 is the sum of the upper surface of the first conductive part 2A and the upper surface of the second conductive part 2B.
  • the back surface 202 is a combination of the lower surface of the first conductive section 2A and the lower surface of the second conductive section 2B.
  • the back surface 202 is joined to the support substrate 3 so as to face the support substrate 3.
  • the support substrate 3 supports the conductive support 2.
  • the support substrate 3 is composed of, for example, an AMB (Active Metal Brazing) substrate.
  • Support substrate 3 includes an insulating layer 31, a first metal layer 32, and a second metal layer 33.
  • the insulating layer 31 is made of, for example, ceramics with excellent thermal conductivity. Such ceramics include, for example, SiN (silicon nitride).
  • the insulating layer 31 is not limited to ceramics, and may be an insulating resin sheet or the like.
  • the insulating layer 31 has, for example, a rectangular shape in plan view.
  • the first metal layer 32 is formed on the upper surface of the insulating layer 31 (the surface facing the z1 direction).
  • the constituent material of the first metal layer 32 includes, for example, Cu.
  • the constituent material may include Al (aluminum) instead of Cu.
  • the first metal layer 32 includes a first portion 32A and a second portion 32B.
  • the first portion 32A and the second portion 32B are spaced apart in the x direction.
  • the first portion 32A is located further in the x1 direction than the second portion 32B.
  • the first portion 32A is joined to the first conductive portion 2A and supports the first conductive portion 2A.
  • the second portion 32B is joined to the second conductive portion 2B and supports the second conductive portion 2B.
  • the first portion 32A and the second portion 32B each have a rectangular shape in plan view.
  • the first portion 32A and the second portion 32B have shapes corresponding to the first conductive portion 2A and the second conductive portion 2B, respectively.
  • the second metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 direction).
  • the constituent material of the second metal layer 33 is the same as that of the first metal layer 32.
  • the lower surface (bottom surface 302 described below) of the second metal layer 33 is exposed from the sealing resin 7, for example.
  • the lower surface may not be exposed from the sealing resin 7 and may be covered with the sealing resin 7.
  • the second metal layer 33 overlaps both the first portion 32A and the second portion 32B in plan view.
  • the support substrate 3 has a support surface 301 and a bottom surface 302, as shown in FIG.
  • the support surface 301 and the bottom surface 302 are separated from each other in the z direction.
  • the support surface 301 faces the z1 direction, and the bottom surface 302 faces the z2 direction.
  • the bottom surface 302 is exposed from the sealing resin 7.
  • the support surface 301 is the upper surface of the first metal layer 32, and is the sum of the upper surface of the first portion 32A and the upper surface of the second portion 32B.
  • the support surface 301 faces the conductive support 2, and the conductive support 2 (back surface 202) is joined to the support surface 301.
  • the bottom surface 302 is the lower surface of the second metal layer 33.
  • a heat dissipating member for example, a heat sink), etc. (not shown) can be attached to the bottom surface 302.
  • the dimension of the support substrate 3 in the z direction is, for example, 0.01 mm to 2.0 mm.
  • Each of the first conductive member 51, the second conductive member 52, the third conductive member 53, and the fourth conductive member 54 constitutes a path for the main current switched by the two switching elements 10.
  • the first conductive member 51 has a connecting portion 511 and a first main terminal 512.
  • the connecting portion 511 is bonded to the first conductive portion 2A via a conductive bonding material 59.
  • the first main terminal 512 is exposed from the sealing resin 7 and is located in the x1 direction with respect to the sealing resin 7.
  • the second conductive member 52 has a connecting portion 521 and a second main terminal 522.
  • the connecting portion 521 is bonded to the second conductive portion 2B via a conductive bonding material 59.
  • the second main terminal 522 is exposed from the sealing resin 7 and is located in the x2 direction with respect to the sealing resin 7.
  • the third conductive member 53 has a connecting portion 531 and a third main terminal 532.
  • the connecting portion 531 is bonded to the second main surface electrode 12 (source electrode) of the second switching element 10B via a conductive bonding material 59.
  • the third main terminal 532 is exposed from the sealing resin 7 and is located in the x1 direction with respect to the sealing resin 7. Further, the third main terminal 532 is located in the y1 direction with respect to the first main terminal 512, and overlaps with the first main terminal 512 when viewed in the y direction.
  • the fourth conductive member 54 is connected to the second main surface electrode 12 (source electrode) of the first switching element 10A and the second conductive part 2B, and is connected to the second main surface electrode 12 of the first switching element 10A and the second conductive part 2B.
  • the section 2B is electrically connected.
  • the fourth conductive member 54 and the second main surface electrode 12 of the first switching element 10A are bonded via a conductive bonding material 59.
  • the constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste material, or sintered metal.
  • a DC voltage to be subjected to power conversion is input to the first main terminal 512 and the third main terminal 532 described above.
  • the first main terminal 512 is a positive electrode (P terminal), and the third main terminal 532 is a negative electrode (N terminal).
  • P terminal positive electrode
  • N terminal negative electrode
  • From the second main terminal 522 an AC voltage whose power has been converted by the first switching element 10A and the second switching element 10B is output.
  • the first main terminal 512 is electrically connected to the back electrode 13 (drain electrode) of the first switching element 10A via the first conductive portion 2A.
  • the second main terminal 522 is electrically connected to the back electrode 13 (drain electrode) of the second switching element 10B via the second conductive portion 2B.
  • the third main terminal 532 is electrically connected to the second main surface electrode 12 (source electrode) of the second switching element 10B.
  • the first main terminal 512, the second main terminal 522, and the third main terminal 532 are examples of components of "a plurality of main terminals.”
  • Each of the plurality of control terminals 4 is a pin-shaped terminal for controlling the first switching element 10A and the second switching element 10B.
  • the plurality of control terminals 4 include a plurality of first control terminals 41A, 41B and a plurality of second control terminals 42A, 42B.
  • the plurality of first control terminals 41A, 41B are used for controlling the first switching element 10A, etc.
  • the plurality of second control terminals 42A, 42B are used for controlling the second switching element 10B.
  • each of the plurality of control terminals 4 partially protrudes from the sealing resin 7 in the y2 direction and extends in the z1 direction.
  • the plurality of first control terminals 41A, 41B are located in the x1 direction with respect to the plurality of second control terminals 42A, 42B.
  • the plurality of first control terminals 41A, 41B are arranged at intervals in the x direction.
  • the first control terminal 41A is a terminal (gate terminal) for inputting a drive signal to the first switching element 10A.
  • the first control terminal 41A is connected to a wire 61 and is electrically connected to the first main surface electrode 11 (gate electrode) of the first switching element 10A via the wire 61.
  • a drive signal for driving the first switching element 10A is input to the first control terminal 41A (for example, a gate voltage is applied).
  • the first control terminal 41B is a source signal detection terminal (source sense terminal) of the first switching element 10A.
  • the first control terminal 41B is connected to a wire 62 and is electrically connected to the second main surface electrode 12 (source electrode) of the first switching element 10A via the wire 62.
  • the voltage (voltage corresponding to the source current) applied to the second main surface electrode 12 (source electrode) of the first switching element 10A is detected from the first control terminal 41B.
  • the plurality of second control terminals 42A, 42B are arranged at intervals in the x direction.
  • the second control terminal 42A is a terminal (gate terminal) for inputting a drive signal to the second switching element 10B.
  • the second control terminal 42A is connected to a wire 61 and is electrically connected to the first main surface electrode 11 (gate electrode) of the second switching element 10B via the wire 61.
  • a drive signal for driving the second switching element 10B is input to the second control terminal 42A (for example, a gate voltage is applied).
  • the second control terminal 42B is a source signal detection terminal (source sense terminal) of the second switching element 10B.
  • the second control terminal 42B is connected to a wire 62 and is electrically connected to the second main surface electrode 12 (source electrode) of the second switching element 10B via the wire 62.
  • a voltage (voltage corresponding to the source current) applied to the second main surface electrode 12 (source electrode) of the second switching element 10B is detected from the second control terminal 42B.
  • Each of the wires 61 and 62 described above is, for example, a bonding wire.
  • the constituent material of each wire 61, 62 includes, for example, Au (gold), Al, or Cu.
  • the sealing resin 7 seals the two switching elements 10, the conductive support 2 (the first conductive part 2A and the second conductive part 2B), the support substrate 3 (excluding the bottom surface 302), and one of the plurality of control terminals 4. It covers each portion of the first conductive member 51, the second conductive member 52, and the third conductive member 53, the fourth conductive member 54, and the plurality of wires 61, 62, respectively.
  • the sealing resin 7 is made of, for example, black epoxy resin.
  • the sealing resin 7 is formed by, for example, molding.
  • the sealing resin 7 has a resin main surface 71 , a resin back surface 72 , a first resin side surface 73 , a second resin side surface 74 , a third resin side surface 75 , and a fourth resin side surface 76 .
  • the main resin surface 71 faces the z1 direction
  • the resin back surface 72 faces the z2 direction.
  • the main resin surface 71 and the resin back surface 72 are separated from each other in the z direction.
  • the resin back surface 72 has a frame shape that surrounds the bottom surface 302 of the support substrate 3 (the lower surface of the second metal layer 33) in plan view.
  • the bottom surface 302 of the support substrate 3 is exposed from the resin back surface 72 and is flush with the resin back surface 72, for example.
  • the first resin side surface 73 and the second resin side surface 74 are separated from each other in the x direction.
  • Each of the first resin side surface 73 and the second resin side surface 74 is connected to both the resin main surface 71 and the resin back surface 72, and is sandwiched between them in the z direction.
  • the first resin side surface 73 faces in the x1 direction.
  • the second resin side surface 74 is located in the x2 direction with respect to the first resin side surface 73 and faces in the x2 direction.
  • the first main terminal 512 of the first conductive member 51 and the third main terminal 532 of the third conductive member 53 protrude from the first resin side surface 73 in the x1 direction.
  • the second main terminal 522 of the second conductive member 52 protrudes from the second resin side surface 74 in the x2 direction.
  • the third resin side surface 75 and the fourth resin side surface 76 are separated from each other in the y direction.
  • Each of the third resin side surface 75 and the fourth resin side surface 76 is connected to both the resin main surface 71 and the resin back surface 72, and is sandwiched between them in the z direction.
  • the third resin side surface 75 faces in the y1 direction.
  • the fourth resin side surface 76 is located in the y2 direction with respect to the third resin side surface 75 and faces in the y2 direction.
  • the sealing resin 7 has a plurality of (two in this embodiment) side recesses 751.
  • Each of the plurality of side surface recesses 751 is recessed from the third resin side surface 75 in the y2 direction.
  • each of the plurality of side recesses 751 is also recessed from the main resin surface 71 in the z2 direction.
  • the plurality of side recesses 751 are spaced apart from each other in the x direction.
  • Each of the plurality of control terminals 4 protrudes from the fourth resin side surface 76 in the y2 direction. As shown in FIG. 5, each of the plurality of control terminals 4 overlaps with one of the plurality of side recesses 751 when viewed in the y direction.
  • each of the plurality of first control terminals 41A, 41B overlaps with one side recess 751 (the side recess 751 located in the x1 direction) when viewed in the y direction
  • the plurality of second control terminals 42A, 42B Each overlaps with the other side recess 751 (the side recess 751 located in the x2 direction) when viewed in the y direction.
  • the first bonding shape J1 is arranged in the y1 direction in the semiconductor device A10.
  • the second bond shape J2 is arranged in the y2 direction in the semiconductor device A10.
  • the first joint shape J1 and the second joint shape J2 can be combined with each other.
  • the plurality of side recesses 751 in the sealing resin 7 are included in the first joint shape J1.
  • the plurality of control terminals 4 are included in the second joint shape J2.
  • FIG. 8 shows a semiconductor device unit B10 including a plurality of semiconductor devices A10.
  • a plurality of semiconductor devices A10 are lined up in the y direction.
  • semiconductor devices A10 adjacent to each other in the y direction a portion of each of the plurality of control terminals 4 of one semiconductor device A10 is accommodated in a side recess 751 of the other semiconductor device A10.
  • the plurality of control terminals 4 second coupling shape J2
  • side recesses 751 first coupling shape J1
  • the semiconductor device A10 includes only two switching elements 10.
  • One of the two switching elements 10 is a first switching element 10A, and the other is a second switching element 10B.
  • Each of the first switching element 10A and the second switching element 10B includes SiC as a constituent material.
  • the first switching element 10A and the second switching element 10B are connected in series with the first switching element 10A as an upper arm and the second switching element 10B as a lower arm. According to such a configuration in which only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, unlike a configuration in which a plurality of switching elements connected in parallel are built-in, heat The occurrence of interference can be avoided and heat dissipation can be improved. Furthermore, by using a plurality of semiconductor devices A10 connected in parallel like the semiconductor device unit B10 shown in FIG. 8, it is possible to easily accommodate various required current capacities.
  • the semiconductor device A10 has a first main terminal 512 located in the x1 direction with respect to the sealing resin 7. Further, the semiconductor device A10 includes a first bonding shape J1 and a second bonding shape J2. The first coupling shape J1 is arranged in the y1 direction in the switching element 10. The second bond shape J2 is arranged in the y2 direction in the semiconductor device A10, and the first bond shape J1 and the second bond shape J2 can be combined with each other. According to such a configuration, by arranging the plurality of semiconductor devices A10 in the y direction and combining them with each other, it is possible to handle the plurality of semiconductor devices A10 as one semiconductor device unit B10.
  • the semiconductor device A10 has a plurality of side recesses 751 and a plurality of control terminals 4.
  • the plurality of side recesses 751 are recessed from the third resin side surface 75 in the y2 direction, and the plurality of control terminals 4 protrude from the fourth resin side surface 76 in the y2 direction.
  • Each of the plurality of control terminals 4 overlaps with one of the plurality of side recesses 751 when viewed in the y direction.
  • FIG. 9 and 10 show a semiconductor device according to a first modification of the first embodiment.
  • FIG. 9 is a perspective view showing a semiconductor device A11 of this modification.
  • FIG. 10 is a front view of the semiconductor device A11, in which the sealing resin 7 is shown with imaginary lines.
  • elements that are the same as or similar to those of the semiconductor device A10 of the embodiment described above are given the same reference numerals as those of the embodiment described above, and the description thereof will be omitted as appropriate.
  • the configurations of the respective parts in the modifications shown in FIG. 9 and onwards can be appropriately combined with each other within a range that does not cause technical contradiction.
  • the positional relationship between the first conductive member 51 (first main terminal 512) and the third conductive member 53 (third main terminal 532) is different from the semiconductor device A10 of the above embodiment.
  • the first main terminal 512 and the third main terminal 532 are arranged at different positions in the z direction.
  • the third main terminal 532 is located in the z1 direction with respect to the first main terminal 512.
  • the semiconductor device A11 of this modification since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A11 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the third main terminal 532 is located above (in the z1 direction) with respect to the first main terminal 512.
  • the vertical height is It is possible to efficiently connect two external terminals that each extend in the y direction at once due to the difference.
  • the same effects as those of the above embodiment are achieved.
  • FIG. 11 and 12 show a semiconductor device according to a second modification of the first embodiment.
  • FIG. 11 is a perspective view showing a semiconductor device A12 of this modification.
  • FIG. 12 is a front view of the semiconductor device A12, in which the sealing resin 7 is shown with imaginary lines.
  • the positional relationship between the first conductive member 51 (first main terminal 512) and the third conductive member 53 (third main terminal 532) is different from the semiconductor device A10 of the above embodiment.
  • the first main terminal 512 and the third main terminal 532 are arranged at different positions in the z direction.
  • the third main terminal 532 is located in the z1 direction with respect to the first main terminal 512. Further, the third main terminal 532 is located in the x2 direction with respect to the first main terminal 512, and overlaps with the first main terminal 512 in a plan view.
  • the semiconductor device A12 of this modification since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided, and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A12 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the third main terminal 532 is located in the x2 direction with respect to the first main terminal 512, and is also located above the first main terminal 512 (in the z1 direction). According to such a configuration, for example, when a plurality of semiconductor devices A12 are arranged in the y direction and connected in parallel, the vertical height is It is possible to efficiently connect two external terminals that each extend in the y direction at once due to the difference. In addition, within the range of the same configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.
  • FIG. 13 and 14 show a semiconductor device according to a third modification of the first embodiment.
  • FIG. 13 is a perspective view showing a semiconductor device A13 of this modification.
  • FIG. 14 is a front view of the semiconductor device A13, in which the sealing resin 7 is shown with imaginary lines.
  • the semiconductor device A13 of this modification differs from the semiconductor device A10 of the above embodiment mainly in the arrangement of the second conductive member 52 (second main terminal 522) and the third conductive member 53 (third main terminal 532). .
  • the third main terminal 532 is located in the x2 direction with respect to the sealing resin 7.
  • the third main terminal 532 of the third conductive member 53 protrudes from the second resin side surface 74 in the x2 direction.
  • the second main terminal 522 is located in the y2 direction with respect to the sealing resin 7.
  • the second main terminal 522 of the second conductive member 52 protrudes from the fourth resin side surface 76 in the y2 direction and extends in the z1 direction.
  • the second main terminal 522 is located between the plurality of first control terminals 41A, 41B and the plurality of second control terminals 42A, 42B in the x direction.
  • the sealing resin 7 has three side recesses 751.
  • the three side recesses 751 are spaced apart from each other in the x direction.
  • Each of the plurality of first control terminals 41A, 41B overlaps with one side recess 751 (side recess 751 located in the x1 direction) when viewed in the y direction, and each of the plurality of second control terminals 42A, 42B It overlaps with another side recess 751 (the side recess 751 located in the x2 direction) when viewed in the direction.
  • the second main terminal 522 overlaps with another side recess 751 (the side recess 751 located at the center in the x direction) when viewed in the y direction.
  • a plurality (three) of side recesses 751 in the sealing resin 7 are included in the first joint shape J1.
  • the plurality of control terminals 4 and the second main terminal 522 are included in the second joint shape J2.
  • FIG. 15 shows a semiconductor device unit B11 including a plurality of semiconductor devices A13.
  • the plurality of semiconductor devices A13 are lined up in the y direction.
  • the semiconductor devices A13 adjacent in the y direction a portion of each of the plurality of control terminals 4 of one semiconductor device A10 and a portion of the second main terminal 522 are accommodated in the side recess 751 of the other semiconductor device A10. has been done.
  • the plurality of control terminals 4 and second main terminals 522 second coupling shape J2
  • side recess 751 first coupling shape J1
  • the semiconductor device A13 of this modification since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A13 connected in parallel, it is possible to easily accommodate various required current capacities. In addition, within the range of the same configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.
  • FIG. 16 and 17 show a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 16 is a perspective view showing the semiconductor device A20 of this embodiment.
  • FIG. 17 is a right side view of the semiconductor device A20.
  • the semiconductor device A20 of this embodiment differs from the semiconductor device A10 of the above embodiment mainly in that it includes a first engagement portion 752 and a second engagement portion 762.
  • the first engaging portion 752 is provided on the third resin side surface 75 and protrudes from the third resin side surface 75 in the y1 direction.
  • the first engaging portion 752 has an L-shaped cross section and extends a predetermined length from the second resin side surface 74 in the x1 direction.
  • the second engaging portion 762 is a groove recessed from the fourth resin side surface 76 in the y1 direction.
  • the second engaging portion 762 has an L-shaped cross section and extends a predetermined length from the second resin side surface 74 in the x1 direction.
  • the first engaging portion 752 and the second engaging portion 762 are capable of engaging with each other.
  • the side recess 751 is formed continuously from the first resin side surface 73 to the second resin side surface 74.
  • the side recess 751 and the first engaging portion 752 in the sealing resin 7 are included in the first joint shape J1.
  • the plurality of control terminals 4 and the second engaging portions 762 in the sealing resin 7 are included in the second joint shape J2.
  • FIG. 18 shows a semiconductor device unit B20 including a plurality of semiconductor devices A20.
  • the plurality of semiconductor devices A20 are lined up in the y direction.
  • semiconductor devices A20 adjacent to each other in the y direction a portion of each of the plurality of control terminals 4 of one semiconductor device A20 is accommodated in a side recess 751 of the other semiconductor device A20. Further, the second engaging portion 762 of one semiconductor device A20 and the first engaging portion 752 of the other semiconductor device A20 are engaged with each other.
  • the plurality of control terminals 4 and the second engagement portions 762 (second coupling shape J2) are connected to the side recess 751 and the first engagement. portion 752 (first joint shape J1).
  • the first engaging portion 752 and the second engaging portion 762 engage with each other, thereby mechanically connecting the plurality of semiconductor devices A20.
  • the semiconductor device A20 of the present embodiment since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided, and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A20 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the semiconductor device A20 has a first engagement portion 752 included in the first coupling shape J1 and a second engagement portion 762 included in the second coupling shape J2.
  • the first engaging portion 752 and the second engaging portion 762 are capable of engaging with each other. According to such a configuration, by arranging the plurality of semiconductor devices A20 in the y direction and combining them with each other, it is possible to handle the plurality of semiconductor devices A20 as one mechanically connected semiconductor device unit B20. In addition, within the range of the same configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.
  • FIG. 19 shows a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 19 is a perspective view showing the semiconductor device A30 of this embodiment.
  • the semiconductor device A30 of this embodiment differs greatly from the semiconductor device A10 of the above embodiment in that it includes a first engagement portion 753 and a second engagement portion 763.
  • the sealing resin 7 does not have a side recess 751.
  • the plurality of control terminals 4 protrude from the main resin surface 71 of the sealing resin 7 and extend in the z1 direction.
  • the first engaging portion 753 is provided on the third resin side surface 75 and is a groove recessed from the third resin side surface 75 in the y2 direction.
  • the first engaging portion 753 has a trapezoidal cross section and is formed continuously in the z direction from the main resin surface 71 to the resin back surface 72.
  • the second engaging portion 763 is provided on the fourth resin side surface 76 and protrudes from the fourth resin side surface 76 in the y2 direction.
  • the second engaging portion 763 has a trapezoidal cross section and is formed continuously in the z direction from the resin main surface 71 to the resin back surface 72.
  • the first engaging portion 753 and the second engaging portion 763 are capable of engaging with each other.
  • the first engaging portion 753 in the sealing resin 7 is included in the first joint shape J1.
  • the second engaging portion 763 in the sealing resin 7 is included in the second joint shape J2.
  • FIG. 20 shows a semiconductor device unit B30 including a plurality of semiconductor devices A30.
  • the plurality of semiconductor devices A30 are lined up in the y direction.
  • the first engaging portion 753 of one semiconductor device A30 and the second engaging portion 763 of the other semiconductor device A30 are engaged with each other.
  • the first engaging portion 753 first joint shape J1
  • the second engaging portion 763 second joint shape J2
  • the semiconductor device A30 of the present embodiment only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, so that generation of thermal interference is avoided and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A30 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the semiconductor device A30 has a first engagement portion 753 included in the first coupling shape J1 and a second engagement portion 763 included in the second coupling shape J2.
  • the first engaging portion 753 and the second engaging portion 763 are capable of engaging with each other. According to such a configuration, by arranging a plurality of semiconductor devices A30 in the y direction and combining them with each other, it is possible to handle the plurality of semiconductor devices A30 as one mechanically connected semiconductor device unit B30. In addition, within the range of the same configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.
  • FIG. 21 shows a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 21 is a perspective view showing the semiconductor device A40 of this embodiment.
  • the semiconductor device A40 of this embodiment is significantly different from the semiconductor device A30 of the above embodiment in that it includes a first alignment section 758, a second alignment section 768, a first connection section 43, and a second connection section 44. . Further, unlike the semiconductor device A30 of the above embodiment, a plurality of control terminals 4 are not provided.
  • the first positioning portion 758 is provided on the third resin side surface 75 and is a recessed portion recessed from the third resin side surface 75 in the y2 direction.
  • the first positioning portion 758 is also recessed from the main resin surface 71 .
  • the first positioning portions 758 are provided at two locations separated in the x direction.
  • the second positioning portion 768 is a convex portion that is provided on the fourth resin side surface 76 and protrudes from the fourth resin side surface 76 in the y2 direction.
  • the second positioning portions 768 are provided at two locations separated in the x direction.
  • the second alignment part 768 can be fitted into the corresponding first alignment part 758, whereby the first alignment part 758 and the second alignment part 768 are aligned.
  • first alignment part 758 and the second alignment part 768 are aligned, the first engagement part 753 and the second engagement part 763 engage with each other.
  • first engaging portion 753 and the first positioning portion 758 in the sealing resin 7 are included in the first joint shape J1.
  • second engaging portion 763 and the second positioning portion 768 in the sealing resin 7 are included in the second joint shape J2.
  • the first connecting portion 43 is arranged on the main resin surface 71 of the sealing resin 7.
  • the first connection portion 43 is electrically connected to either the first switching element 10A or the second switching element 10B.
  • four first connection parts 43 are provided.
  • the four first connecting portions 43 are arranged closer to the y2 direction on the resin main surface 71 and are arranged along the x direction.
  • two first connecting parts 43 are arranged closer to the x1 direction, and the other two first connecting parts 43 are arranged closer to the x2 direction.
  • the two first connection portions 43 closer to the x1 direction are electrically connected to the first switching element 10A.
  • One of the first connection parts 43 is electrically connected to the first main surface electrode 11 (gate electrode) of the first switching element 10A, and the other first connection part 43 is electrically connected to the second main surface electrode 12 (gate electrode) of the first switching element 10A. source electrode). Further, the two first connection portions 43 closer to the x2 direction are electrically connected to the second switching element 10B. One of the first connection parts 43 is electrically connected to the first main surface electrode 11 (gate electrode) of the second switching element 10B, and the other first connection part 43 is electrically connected to the second main surface electrode 12 (gate electrode) of the second switching element 10B. source electrode).
  • the second connecting portion 44 is arranged on the main resin surface 71 of the sealing resin 7.
  • the second connection portion 44 is electrically connected to either the first switching element 10A or the second switching element 10B.
  • four second connections 44 are provided.
  • the second connecting portion 44 is arranged apart from the corresponding first connecting portion 43 in the y direction.
  • the four second connecting portions 44 are arranged closer to the y1 direction on the main resin surface 71 and are arranged along the x direction.
  • two second connecting portions 44 are arranged closer to the x1 direction, and the other two second connecting portions 44 are arranged closer to the x2 direction.
  • the two second connection portions 44 closer to the x1 direction are electrically connected to the first switching element 10A.
  • One of the second connection parts 44 is electrically connected to the first main surface electrode 11 (gate electrode) of the first switching element 10A, and the other second connection part 44 is electrically connected to the second main surface electrode 12 (gate electrode) of the first switching element 10A. source electrode). Furthermore, the two second connecting portions 44 closer to the x2 direction are electrically connected to the second switching element 10B. One of the second connection parts 44 is electrically connected to the first main surface electrode 11 (gate electrode) of the second switching element 10B, and the other second connection part 44 is electrically connected to the second main surface electrode 12 (gate electrode) of the second switching element 10B. source electrode).
  • a configuration including a plurality of control terminals 4 may be used.
  • a pin-shaped control terminal is attached to each of the four first connection portions 43 shown in FIG. 21, for example.
  • FIG. 22 shows an example of a semiconductor device unit B40 including a plurality of semiconductor devices A40.
  • the plurality of semiconductor devices A40 are lined up in the y direction.
  • the first engaging portion 753 of one semiconductor device A40 and the second engaging portion 763 of the other semiconductor device A40 engage with each other, and A second alignment portion 768 of the other semiconductor device A40 is fitted into the first alignment portion 758.
  • the first engaging portion 753 and the first positioning portion 758 (first joint shape J1), the second engaging portion 763, and A second positioning portion 768 (second joint shape J2) is combined.
  • the first engaging portion 753 and the second engaging portion 763 engage with each other, thereby mechanically connecting the plurality of semiconductor devices A30.
  • the first connection portion 43 of one semiconductor device A40 and the corresponding second connection portion 44 of the other semiconductor device A40 are connected. , are electrically connected by a pin-shaped connecting member 47.
  • control terminal 4 is attached to each of the four first connection parts 43 in one semiconductor device A40. According to such a configuration, when a plurality of semiconductor devices A40 are connected in parallel, the control terminal 4 is provided for only one semiconductor device A40 to connect it to the outside, so that each of the plurality of semiconductor devices A40 can be connected in parallel. Drive control of the first switching element 10A and the second switching element 10B is possible.
  • FIG. 23 shows another example of a semiconductor device unit B41 including a plurality of semiconductor devices A40.
  • the first connection portion 43 of one semiconductor device A40 and the corresponding second connection portion 44 of the other semiconductor device A40 are connected. , are electrically connected by a plate-shaped connecting member 48.
  • the control terminal 4 is attached to each of the four first connection parts 43 in one semiconductor device A40.
  • the control terminal 4 is connected to a drive board 80 (represented by imaginary lines in FIG. 23) arranged in the z1 direction with respect to the plurality of semiconductor devices A40.
  • each of the plurality of semiconductor devices A40 can be connected in parallel. It is possible to drive and control the first switching element 10A and the second switching element 10B.
  • the semiconductor device A40 of the present embodiment since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A40 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the first engaging portion 753 and the second engaging portion 763 are capable of engaging with each other. According to such a configuration, by arranging a plurality of semiconductor devices A40 in the y direction and combining them with each other, it is possible to handle the plurality of semiconductor devices A40 as one mechanically connected semiconductor device unit B40 (B41). It is. Furthermore, in this embodiment, when the first alignment part 758 and the second alignment part 768 are aligned, the first engagement part 753 and the second engagement part 763 engage with each other. According to such a configuration, it is possible to accurately connect the plurality of semiconductor devices A40. In addition, within the range of the same configuration as the semiconductor device A10 of the above embodiment, the same effects as those of the above embodiment are achieved.
  • FIG. 24 and 25 show a semiconductor device according to a fifth embodiment of the present disclosure.
  • FIG. 24 is a perspective view showing the semiconductor device A50 of this embodiment.
  • FIG. 25 is a perspective view of the semiconductor device A50, viewed from the back side.
  • the semiconductor device A50 of this embodiment differs greatly from the semiconductor device A30 of the above embodiment in that it includes a first engaging portion 754, a second engaging portion 764, a third connecting portion 45, and a fourth connecting portion 46. There is.
  • the first engaging portion 754 is provided on the third resin side surface 75 and has a concave connector shape recessed from the third resin side surface 75 in the y2 direction. In the illustrated example, the first engaging portions 754 are provided at two locations separated in the x direction.
  • the second engaging portion 764 is provided on the fourth resin side surface 76 and has a convex connector shape that protrudes in the y2 direction. In the illustrated example, the second engaging portions 764 are provided at two locations separated in the x direction.
  • the second engaging part 764 can be fitted into the corresponding first engaging part 754, so that the first engaging part 754 and the second engaging part 764 can be engaged with each other.
  • the first engaging portion 754 is included in the first coupling shape J1. Further, the second engaging portion 764 is included in the second joint shape J2. Note that the first engaging portion 754 and the second engaging portion 764 are configured by a separate member from the sealing resin 7, for example, but may be configured by a portion of the sealing resin 7.
  • the third connection portion 45 is arranged in the y1 direction in the semiconductor device A50.
  • the third connection portion 45 is electrically connected to either the first switching element 10A or the second switching element 10B.
  • four third connecting portions 45 are provided.
  • Each of the third connecting parts 45 is a pin-shaped terminal, and two third connecting parts 45 are arranged in one first engaging part 754, and the other two third connecting parts 45 are arranged in the other first engaging part 754. 754.
  • the two third connecting portions 45 disposed in the first engaging portion 754 closer to the x1 direction are electrically connected to the first switching element 10A.
  • One of the third connection parts 45 is electrically connected to the first main surface electrode 11 (gate electrode) of the first switching element 10A, and the other third connection part 45 is electrically connected to the second main surface electrode 12 (gate electrode) of the first switching element 10A. source electrode). Further, the two third connecting portions 45 arranged in the first engaging portion 754 closer to the x2 direction are electrically connected to the second switching element 10B. One of the third connection parts 45 is electrically connected to the first main surface electrode 11 (gate electrode) of the second switching element 10B, and the other third connection part 45 is electrically connected to the second main surface electrode 12 (gate electrode) of the second switching element 10B. source electrode).
  • the fourth connection portion 46 is arranged in the y2 direction in the semiconductor device A50.
  • the fourth connection portion 46 is electrically connected to either the first switching element 10A or the second switching element 10B.
  • four fourth connection parts 46 are provided.
  • Each fourth connection part 46 is a concave terminal, and two fourth connection parts 46 are arranged in one second engagement part 764, and the other two fourth connection parts 46 are arranged in the other second engagement part 764. 764.
  • the two fourth connecting portions 46 disposed on the second engaging portion 764 closer to the x1 direction are electrically connected to the first switching element 10A.
  • One of the fourth connection parts 46 is electrically connected to the first main surface electrode 11 (gate electrode) of the first switching element 10A, and the other fourth connection part 46 is electrically connected to the second main surface electrode 12 (gate electrode) of the first switching element 10A. source electrode). Further, the two fourth connecting portions 46 arranged in the second engaging portion 764 closer to the x2 direction are electrically connected to the second switching element 10B. One of the fourth connection parts 46 is electrically connected to the first main surface electrode 11 (gate electrode) of the second switching element 10B, and the other fourth connection part 46 is electrically connected to the second main surface electrode 12 (gate electrode) of the second switching element 10B. source electrode). When the first engaging portion 754 and the second engaging portion 764 are engaged, the third connecting portion 45 and the corresponding fourth connecting portion 46 are electrically connected.
  • the semiconductor device A50 of the present embodiment since only two switching elements 10 (first switching element 10A and second switching element 10B) are connected in series, occurrence of thermal interference is avoided and heat dissipation is improved. can be improved. Furthermore, by using a plurality of semiconductor devices A50 connected in parallel, it is possible to easily accommodate various required current capacities.
  • the semiconductor device A50 has a first engagement portion 754 included in the first coupling shape J1 and a second engagement portion 764 included in the second coupling shape J2.
  • the first engaging portion 754 and the second engaging portion 764 are capable of engaging with each other. According to such a configuration, by arranging the plurality of semiconductor devices A50 in the y direction and combining them with each other, it is possible to handle the plurality of semiconductor devices A50 as one mechanically connected semiconductor device unit. Further, in this embodiment, when the first engaging portion 754 and the second engaging portion 764 engage, the third connecting portion 45 and the corresponding fourth connecting portion 46 are electrically connected.
  • the first switching element of each of the plurality of semiconductor devices A50 10A and the second switching element 10B can be controlled.
  • the same effects as those of the above embodiment are achieved.
  • a configuration may be adopted in which the plurality of control terminals 4 are not provided.
  • 26 and 27 show a semiconductor device A51 according to this modification.
  • the semiconductor device A50 and the semiconductor device A51 can be mixed and connected in parallel to be used as one semiconductor device unit.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be changed in design in various ways.
  • the semiconductor device of the present disclosure may be configured to further include, for example, a diode (such as a Schottky barrier diode) as a rectifying element.
  • a diode such as a Schottky barrier diode
  • FIG. 28 a configuration is adopted in which two Schottky barrier diodes SBD1 and SBD2 are individually connected in parallel to two first switching elements 10A and second switching elements 10B connected in series. Good too.
  • the present disclosure includes configurations related to the following additional notes.
  • Additional note 1 comprising only two switching elements and a sealing resin that covers the only two switching elements, Of the only two switching elements, one is a first switching element and the other is a second switching element, Each of the first switching element and the second switching element includes SiC as a constituent material, The first switching element and the second switching element are connected in series, with the first switching element serving as an upper arm and the second switching element serving as a lower arm.
  • Appendix 2. Further comprising a plurality of main terminals through which main current flows, The semiconductor device according to appendix 1, wherein the plurality of main terminals include a first main terminal located on one side in a first direction with respect to the sealing resin.
  • the sealing resin has a resin main surface facing one side in a thickness direction perpendicular to the first direction and the second direction, and a first resin side surface and a second resin side surface facing one side and the other side in the first direction.
  • the semiconductor device according to appendix 3 comprising a resin side surface, and a third resin side surface and a fourth resin side surface facing one side and the other side in the second direction. Appendix 5.
  • the plurality of main terminals include a second main terminal located on the other side in the first direction with respect to the sealing resin, and a third main terminal located on one side in the first direction with respect to the sealing resin.
  • the semiconductor device according to appendix 4 comprising a terminal. Appendix 6.
  • the sealing resin has at least one side recess that is recessed from the third resin side surface to the other side in the second direction, The plurality of control terminals protrude from the fourth resin side surface and overlap the at least one side recess when viewed in the second direction, the at least one side recess is included in the first coupling shape;
  • the semiconductor device according to appendix 4 wherein the plurality of control terminals are included in the second coupling shape. Appendix 7.
  • the plurality of main terminals include a second main terminal protruding from the fourth resin side surface, The second main terminal overlaps the at least one side recess when viewed in the second direction,
  • Appendix 8 A first engaging portion is provided on the third resin side surface, and a second engaging portion is provided on the fourth resin side surface, The first engaging portion and the second engaging portion are capable of engaging with each other, the first engagement part is included in the first coupling shape, The semiconductor device according to appendix 4, wherein the second engaging portion is included in the second coupling shape.
  • the sealing resin has a first alignment portion provided on the third resin side surface and a second alignment portion provided on the fourth resin side surface, the first alignment part is included in the first joint shape, the second alignment part is included in the second joint shape,
  • the semiconductor device according to appendix 8 wherein the first engaging part and the second engaging part engage with each other when the first positioning part and the second positioning part are aligned.
  • Appendix 10. further comprising a plurality of control terminals for controlling the first switching element and the second switching element, The semiconductor device according to appendix 8, wherein the plurality of control terminals protrude from the resin main surface.
  • the semiconductor device according to appendix 8 wherein a first connection portion electrically connected to at least one of the first switching element and the second switching element is disposed on the resin main surface.
  • Appendix 12. A second connection portion that is electrically connected to at least one of the first switching element and the second switching element is disposed on the resin main surface, The semiconductor device according to appendix 11, wherein the second connection portion is spaced apart from the first connection portion in the second direction.
  • Appendix 13 further comprising a plurality of control terminals for controlling the first switching element and the second switching element, The semiconductor device according to appendix 11, wherein each of the plurality of control terminals is connected to the first connection portion.
  • a third connecting portion is provided on one side in the second direction, and a fourth connecting portion is provided on the other side in the second direction, Each of the third connection part and the fourth connection part is electrically connected to at least one of the first switching element and the second switching element, The semiconductor device according to appendix 8, wherein when the first engaging portion and the second engaging portion engage with each other, the third connecting portion and the fourth connecting portion are electrically connected.
  • Appendix 15. further comprising a plurality of control terminals for controlling the first switching element and the second switching element, The semiconductor device according to appendix 14, wherein the plurality of control terminals protrude from the resin main surface.
  • Appendix 16. comprising a plurality of semiconductor devices according to any one of appendices 1 to 15, A semiconductor device unit in which the plurality of semiconductor devices are combined with each other.
  • Switching element 10A First switching element 10B: Second switching Element 101: Element principal surface 102: Element back surface 11: First principal surface electrode 12: Second principal surface electrode 13: Back electrode 19: Conductive bonding material 2: Conductive support 2A: First conductive part 2B: Second conductive Part 201: Main surface 202: Back surface 29: Conductive bonding material 3: Support substrate 301: Support surface 302: Bottom surface 31: Insulating layer 32: First metal layer 32A: First portion 32B: Second portion 33: Second metal Layer 4: Control terminals 41A, 41B: First control terminals 42A, 42B: Second control terminals 43: First connection section 44: Second connection section 45: Third connection section 46: Fourth connection section 47, 48: Connection Member 51: First conductive member 511: Connection portion 512: First main terminal 52:

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteur et une unité de dispositif à semi-conducteur comprenant : deux éléments de commutation ; et une résine d'étanchéité qui recouvre les deux éléments de commutation. L'un des deux éléments de commutation est un premier élément de commutation et l'autre est un second élément de commutation. Le premier élément de commutation et le second élément de commutation contiennent chacun du SiC en tant que matériau constitutif. Le premier élément de commutation et le second élément de commutation sont connectés en série de telle sorte que le premier élément de commutation sert de bras supérieur et le second élément de commutation sert de bras inférieur.
PCT/JP2023/022739 2022-07-05 2023-06-20 Dispositif à semi-conducteur et unité de dispositif à semi-conducteur WO2024009753A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005117728A (ja) * 2003-10-03 2005-04-28 Toyota Motor Corp インバータユニットにおけるパワーモジュールの接続構造
WO2013121491A1 (fr) * 2012-02-13 2013-08-22 パナソニック株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2016181676A (ja) * 2015-03-24 2016-10-13 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP2017168770A (ja) * 2016-03-18 2017-09-21 富士電機株式会社 半導体装置
WO2018087800A1 (fr) * 2016-11-08 2018-05-17 三菱電機株式会社 Module semiconducteur et dispositif à semiconducteur

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005117728A (ja) * 2003-10-03 2005-04-28 Toyota Motor Corp インバータユニットにおけるパワーモジュールの接続構造
WO2013121491A1 (fr) * 2012-02-13 2013-08-22 パナソニック株式会社 Dispositif à semi-conducteur et son procédé de fabrication
JP2016181676A (ja) * 2015-03-24 2016-10-13 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP2017168770A (ja) * 2016-03-18 2017-09-21 富士電機株式会社 半導体装置
WO2018087800A1 (fr) * 2016-11-08 2018-05-17 三菱電機株式会社 Module semiconducteur et dispositif à semiconducteur

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