WO2024000749A1 - High-aspect-ratio micro-structured transmissive interference-microscopic nondestructive measurement apparatus and method - Google Patents

High-aspect-ratio micro-structured transmissive interference-microscopic nondestructive measurement apparatus and method Download PDF

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WO2024000749A1
WO2024000749A1 PCT/CN2022/112135 CN2022112135W WO2024000749A1 WO 2024000749 A1 WO2024000749 A1 WO 2024000749A1 CN 2022112135 W CN2022112135 W CN 2022112135W WO 2024000749 A1 WO2024000749 A1 WO 2024000749A1
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light
objective lens
sample
mirror
interference
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PCT/CN2022/112135
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Chinese (zh)
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高志山
袁群
郭珍艳
朱丹
霍霄
马剑秋
孙一峰
张佳乐
范筱昕
王书敏
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南京理工大学
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/22Measuring arrangements characterised by the use of optical techniques for measuring depth

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  • the invention relates to the technical field of precision optical measurement engineering, and specifically relates to a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device and measurement method. It measures the depth and width of the trench structure of silicon-based MEMS devices, and is particularly suitable for high-depth applications.
  • Width ratio trench structures usually MEMS high aspect ratio microstructures with a width of 1 to 10 ⁇ m and a depth of 10 to 300 ⁇ m, have an aspect ratio between 5:1 and 20:1.
  • microelectromechanical systems In the semiconductor industry, as large-scale integrated circuits and micro-nano integrated optical systems develop in a three-dimensional direction with more and more layers, it is necessary to process deep holes (TSV-through silicon vias) for electrical signal transmission leads; another Regarding various silicon-based MEMS sensors, in order to continuously improve the sensor sensitivity, it is necessary to increase the response area of the sensing structure in the sensor, making the depth of the trench-like structure larger and larger, but the line width (CD size) does not become larger, or even become smaller.
  • TSV-through silicon vias deep holes
  • CD size line width
  • These types of microstructures have the characteristics of high aspect ratio. Generally, the aspect ratio is greater than 10:1.
  • the trench width of MEMS high aspect ratio microstructure is 3 ⁇ 10 ⁇ m and the depth is 10 ⁇ 300 ⁇ m. This kind of high aspect ratio microstructure
  • the development of microelectromechanical systems will play a key role in driving the application of microelectromechanical system technology in many fields such as aviation, aerospace
  • contact measurement There are roughly two existing methods for geometric measurement of high aspect ratio microstructure devices at home and abroad: contact measurement and non-contact measurement.
  • the most commonly used instruments include scanning electron microscopes SEM and atomic force microscopes, which usually use destructive methods.
  • the method is to cut along a line perpendicular to the direction of the trench, and use a scanning electron microscope (SEM) to detect and image the section.
  • SEM scanning electron microscope
  • This detection method is destructive detection and is not conducive to process parameter optimization and process improvement in the process;
  • non-contact measurement mainly refers to interferometric measurement technology, which is based on the principle of light wave interference. Compared with other measurement technologies, interferometric measurement Non-destructive measurements can be achieved.
  • white light interference devices are relatively representative. Such devices do not need to contact the sample to be tested or destroy the device structure, and can complete the three-dimensional morphology of the device without damaging it. Measurement. Since the resolution of white light is limited by the numerical aperture NA of the microscope objective, a large NA objective lens must be used to improve the resolution. However, the white light will be blocked by the high aspect ratio grooves of the sample to be measured, resulting in the large NA detection light being unable to reach the grooves. At the bottom, the imaging requirements cannot be met.
  • Near-infrared light can penetrate the silicon material to detect the bottom of the trench, as shown in (b) in Figure 2.
  • the large numerical aperture beam converged by the microscope objective will be modulated by the trench structure and reduce the beam focus. properties, resulting in aberrations, which seriously affect the imaging quality and interference fringes, and result in huge errors in the measurement results.
  • the method is to project an infrared beam onto the surface of a silicon wafer containing a deep groove structure and analyze the reflection from each interface of the deep groove structure.
  • the formed interference light is measured and the reflection spectrum is obtained;
  • the equivalent medium theory is used to construct the theoretical reflection spectrum of the equivalent multi-layer film stack optical model of the deep trench structure, and the simulated annealing algorithm and the gradient-based optimization algorithm are used to calculate the theoretical reflection spectrum.
  • the reflection spectrum is measured for fitting, and then collective characteristic parameters such as the depth and width of the groove are extracted.
  • the method described in this patent needs to model the groove structure of the sample to be tested in advance and calculate the theoretical reflection spectrum.
  • the measurement results of the groove depth and width are obtained by fitting with the measured spectrum.
  • the accuracy of the measurement results is affected by Due to the influence of pre-established theoretical models, it is difficult to model samples with complex structures or unknown structures, making it difficult to ensure the accuracy of measurement results.
  • the purpose of the present invention is to provide a high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device and measurement method to solve the problem that the existing interference microscopy non-destructive measurement method cannot measure the depth and width of MEMS high aspect ratio trench structures. Problems in making measurements and reflection interference microscopy measurement devices still have problems with excessive aberrations during measurements.
  • the technical solution to achieve the purpose of the present invention is: a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device, including a near-infrared short-coherence light source, a Kohler illumination system, a sample to be measured, a second microscope objective, a first center Following mirror group, deformable mirror, second plane reflector, third cubic beam splitting prism, fourth cubic beam splitting prism, tube mirror, first infrared detector, pupil mirror, monochromatic filter, second infrared detector, The third plane reflector, the fourth plane reflector, the second relay mirror group, the third microscope objective lens, the compensation plate, the fifth plane reflector, and the piezoelectric ceramic PZT; the fifth plane reflector is arranged on the piezoelectric ceramic PZT superior.
  • the sample to be tested, the second microscope objective lens, the first relay lens group, the second plane reflector, and the deformation mirror constitute the test optical path.
  • the third plane reflector, the fourth plane reflector, the second relay lens group, and the third The microscope objective lens and the compensation plate constitute the reference optical path.
  • the Kohler illumination system includes a first condenser, a first cubic beam splitter prism, a second condenser, a third condenser, a second cubic beam splitter, a first plane reflector, a first microscopic objective, a fourth condenser, and a fifth condenser.
  • the fifth cubic beam splitting prism, the fifth plane reflector, and the fourth microscope objective lens is included.
  • the piezoelectric ceramic PZT and the first infrared detector are connected to form a synchronous scanning and acquisition system; the deformable mirror and the second infrared detector cooperate to form an aberration detection optical path and an active compensation system.
  • the near-infrared short coherent light source emits a multi-field beam, which is condensed by the first condenser to the first cubic beam splitter and then divided into test light and reference light; the test light passes through the second condenser and the third condenser and then reaches the second cubic beam splitter.
  • the second cubic beam splitter reflects to the first plane mirror, and then is reflected by the first plane mirror and then transmitted through the second cubic beam splitter to the first microscope objective.
  • the fourth cubic beam splitting prism divides the light into two parts. After one part of the light passes through the pupil mirror and the monochromatic filter, the pupil of the second microscopic objective lens is imaged on the second infrared detector; the other part of the light passes through the tube mirror.
  • the sample to be measured is imaged on the first infrared detector; the reference light passes through the fifth condenser and the fourth condenser in sequence and then enters the fifth cubic beam splitting prism, and is reflected by the fifth cubic beam splitting prism to the fifth beam on the piezoelectric ceramic PZT.
  • the plane reflector after being reflected by the fifth plane mirror, passes through the fifth cubic beam splitting prism, the fourth microscope objective lens, the illumination compensation plate, the third microscope objective lens, the second relay lens group, and the fourth plane reflector in sequence. It is reflected by the fourth plane reflector to the third plane reflector, and then reflected to the third cubic beam splitting prism through the third plane reflector.
  • the third cubic beam splitting prism reflects it to the fourth cubic beam splitting prism.
  • the fourth cubic beam splitting prism will The light is divided into two parts. One part of the light interferes with the test light on the first infrared detector after passing through the tube mirror; the other part of the light interferes with the test light on the second infrared detector after passing through the pupil mirror and monochromatic filter.
  • construct an optical path for monitoring the exit pupil aberration of the microscope objective use piezoelectric ceramic PZT to drive the movement of the fifth plane mirror, and use the second infrared detector to collect 4 phase-shifting interference patterns, and calculate the pupil of the second microscope objective Aberration; feedback the pupil aberration of the second microscope objective lens to the shape of the deformable mirror, thereby compensating the pupil aberration, and constructing an active aberration compensation system; using vertical scanning interference method to drive the fifth plane through piezoelectric ceramic PZT The reflector moves, and the first infrared detector simultaneously receives the interference fringe patterns on the surface of the sample to be measured at different depths.
  • the piezoelectric ceramic PZT is used to control the movement of the sample to be measured, and the interference fringe patterns at different positions on the surface of the sample to be measured are obtained.
  • the vertical scanning interference algorithm processes the interference pattern to obtain the depth and width of the groove of the sample to be tested.
  • a transmission interference microscopy non-destructive measurement method for high aspect ratio microstructures The steps are as follows:
  • Step 1 Place the sample to be measured on the confocal plane of the first microscopic objective lens and the second microscopic objective lens, and obtain an image with aberrations and a low-contrast interference fringe pattern on the first infrared detector;
  • Step 2 Use the second infrared detector to monitor the pupil aberration of the second microscope objective, use the piezoelectric ceramic PZT to drive the fifth plane mirror to move, and use the second infrared detector to collect 4 phase-shifting interference patterns, and calculate Obtain pupil aberration.
  • Step 3 The deformable mirror adjusts its shape according to the monitored pupil aberration, and the compensation results are observed on the second infrared detector. After compensation, a clear image and a high-contrast interference fringe pattern are observed on the first infrared detector.
  • Step 4 Use the vertical scanning interference method to drive the fifth plane reflector through the piezoelectric ceramic PZT.
  • the first infrared detector simultaneously collects the interference fringe pattern, and uses the vertical scanning interference algorithm to process the interference pattern.
  • Step 5 Finally obtain the depth and width of the groove structure of the sample to be tested.
  • a near-infrared short coherent light source is used to penetrate the deep trench to the bottom.
  • a large NA microscope objective can be used, which solves the problem that the large NA beam cannot detect the high aspect ratio trench. Problems with the bottom of the trough structure.
  • a microscopic objective lens exit pupil aberration monitoring optical path and an aberration active compensation system are constructed to monitor the changes caused by the sample to be tested.
  • the aberration generated by the deep groove structure is fed back to the deformable mirror to actively compensate for the aberration, improving imaging quality and interference fringe contrast, and ensuring measurement accuracy.
  • a transmissive structure is adopted. Compared with the reflective structure, the optical path is reduced by half, thereby reducing the aberration. , higher measurement accuracy.
  • Figure 1 is a schematic diagram of a transmission interference microscopy non-destructive measurement device for high aspect ratio microstructures.
  • Figure 2 is a schematic diagram of converging a beam to detect the bottom of the trench of the sample to be tested.
  • (a) in Figure 2 shows the use of white light to detect the bottom blocked by the side wall;
  • (b) in Figure 2 shows the use of near-infrared light to penetrate the side wall to detect the bottom. , but the beam focusability deteriorates;
  • (c) in Figure 2 shows that the beam can be converged to the bottom of the groove after compensation using a deformable mirror.
  • Figure 3 is a functional block diagram of pupil aberration monitoring and active compensation.
  • Figure 4 shows the interference pattern collected by the infrared detector.
  • (a) in Figure 4 is the interference pattern before compensation by the deformable mirror;
  • (b) in Figure 4 is the interference pattern after compensation by the deformable mirror.
  • Figure 5 shows the measurement results of the high aspect ratio trench structure.
  • a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device includes a near-infrared short coherent light source 1, a Kohler illumination system, a sample to be measured 9, a second microscopic objective lens 10, and a first relay lens group 11.
  • the sample to be tested 9 the second microscope objective lens 10, the first relay lens group 11, the second plane mirror 12, and the deformation mirror 13 constitute the test optical path.
  • the third plane mirror 21, the fourth plane mirror 22, the second The relay lens group 23, the third microscope objective lens 24, and the compensation plate 25 constitute a reference optical path.
  • the Kohler illumination system includes a first condenser 2, a first cubic beam splitter prism 3, a second condenser 4, a third condenser 5, a second cubic beam splitter 7, a first plane reflector 6, a first microscopic objective lens 8, Four condenser lenses 30 , a fifth condenser lens 31 , a fifth cubic beam splitter prism 27 , a fifth plane reflector 29 , and a fourth microscopic objective lens 26 .
  • the piezoelectric ceramic PZT29 and the first infrared detector 17 are connected to form a synchronous scanning and acquisition system; the deformable mirror 13 and the second infrared detector 20 cooperate to form an aberration detection optical path and an active compensation system.
  • the near-infrared short coherent light source 1 emits a multi-field light beam, which is condensed to the first cubic beam splitter 3 through the first condenser 2 and then divided into test light and reference light; the test light passes through the second condenser 4 and the third condenser 5 to the second
  • the cubic beam splitter 7 is reflected by the second cubic beam splitter 7 to the first plane reflector 6, and then reflected by the first plane reflector 6 and then transmitted to the first microscope objective lens 8 by the second cubic beam splitter 7, and is then illuminated.
  • the sample 9 After measuring the sample 9, it penetrates the sample 9 to be measured, and then passes through the second microscope objective lens 10, the first relay lens group 11, and the deformation mirror 13 in turn to reach the second plane reflector 12, and is reflected by the second plane reflector 12 to The third cubic beam splitting prism 14 is transmitted to the fourth cubic beam splitting prism 15 through the third cubic beam splitting prism 14.
  • the fourth cubic beam splitting prism 15 divides the light into two parts, and part of the light passes through the pupil mirror 18 and the monochromatic filter 19
  • the pupil of the second microscope objective lens 10 is imaged on the second infrared detector 20; another part of the light passes through the tube lens 16 and the sample 9 to be measured is imaged on the first infrared detector 17; the reference light passes through the fifth condenser in sequence 31.
  • the fourth condenser 30 then enters the fifth cubic beam splitting prism 27 and is reflected by the fifth cubic beam splitting prism 27 to the fifth plane reflector 28 on the piezoelectric ceramic PZT 29. After being reflected by the fifth plane reflector 28, it is sequentially reflected by the fifth plane mirror 28. After the five cubic beam splitting prism 27, the fourth microscopic objective lens 26, the illumination compensation plate 25, the third microscopic objective lens 24, the second relay lens group 23 and the fourth plane reflector 22, it is reflected by the fourth plane reflector 22 to The third plane reflection mirror 21 then reflects it to the third cubic beam splitting prism 14. The third cubic beam splitting prism 14 reflects it to the fourth cubic beam splitting prism 15. The fourth cubic beam splitting prism 15 splits the light. It is two parts.
  • One part of the light interferes with the test light on the first infrared detector 17 after passing through the tube mirror 16; the other part of the light passes through the pupil mirror 18 and the monochromatic filter 19 and interferes with the test light on the second infrared detector 20.
  • Interference occurs on the microscope objective lens, an optical path for monitoring the exit pupil aberration of the microscope objective is constructed, the piezoelectric ceramic PZT29 is used to drive the fifth plane reflector 28 to move, and the second infrared detector 20 is used to collect 4 phase-shifting interference patterns, and the second display is calculated and obtained.
  • the pupil aberration of the micro objective lens 10 feedback the pupil aberration of the second micro objective lens 10 to the shape of the deformable mirror 13, thereby compensating the pupil aberration, and constructing an active aberration compensation system; using the vertical scanning interference method to pass
  • the piezoelectric ceramic PZT29 drives the fifth plane reflector 28 to move, and simultaneously receives the interference fringe patterns of the surface of the sample 9 at different depths on the first infrared detector 17.
  • the piezoelectric ceramic PZT29 is used to control the movement of the sample 9 to be measured, and obtain the sample 9 to be measured.
  • the interference fringe patterns at different positions on the surface of sample 9 are measured, and finally the vertical scanning interference algorithm is used to process the interference pattern to obtain the depth and width of the grooves of sample 9 to be measured.
  • test optical path is completely consistent with the reference optical path, and the position of the sample to be tested 9 in the test optical path corresponds to the position of the compensation plate 25 in the reference optical path.
  • the near-infrared short coherent light source 1 is located on the front focal plane of the first condenser 2, the first condenser 2 and the second condenser 4 are confocal, the second condenser 4 and the third condenser 5 are confocal, the first microscopic objective lens 8 and The third condenser lens 5 is confocal; the first condenser lens 2 and the fifth condenser lens 31 are confocal, the fifth condenser lens 31 and the fourth condenser lens 30 are confocal, and the fourth condenser lens 30 and the fourth microscope objective lens 26 are confocal.
  • the sample to be tested 9 is on the focal plane of the first microscopic objective lens 8 and the second microscopic objective lens 10, and the pupil plane of the second microscopic objective lens 10 is conjugated with the deformable mirror 13 with respect to the first relay lens group 11,
  • the first relay lens group 11 includes two identical and confocal condenser lenses, with an aperture placed at the focus position to block stray light.
  • the first infrared detector 17 , the confocal surface of the first relay lens group 11 and the sample to be measured 9 are conjugate.
  • the pupil of the second microscopic objective lens 10 is imaged on the second infrared detector 20 through the first relay lens group 11, the deformation mirror 13, the pupil lens 18 and the monochromatic filter 19.
  • the second microscopic objective lens The pupil of 10, the deformable mirror 13 and the second infrared detector 20 are conjugate, and the central wavelength of the monochromatic filter 19 is the same as the central wavelength of the near-infrared short coherent light source 1; the piezoelectric ceramic PZT29 is used to drive the fifth plane reflector 28 And use the second infrared detector 20 to collect 4 phase-shifted interference patterns, and calculate the pupil aberration; according to the obtained pupil aberration, the deformable mirror 13 is actively adjusted to compensate for the aberration, so that the large numerical aperture beam converges to the target.
  • the bottom of the groove of the sample 9 is measured and penetrates the sample 9 to be tested.
  • the transmission structure test light only passes through the second microscope objective 10 once after penetrating the sample. Pupil aberration is reduced by half, which shows that the transmissive structure can solve the aberration caused by the larger aspect ratio structure.
  • test light penetrating the silicon substrate of the sample will additionally produce transmitted wave aberration, which is offset by using the compensation plate 25 in the reference optical path.
  • the incident light and the outgoing light of the deformable mirror 13 are perpendicular, and the outgoing light irradiates the second plane reflecting mirror 12 frontally and is reflected by the second plane reflecting mirror 12.
  • the direction of the reflected light beam is changed to be consistent with the incident light of the deforming mirror 13. .
  • the outgoing light of the fourth plane reflecting mirror 22 is perpendicular to the incident light. After the outgoing light of the fourth plane reflecting mirror 22 irradiates the third plane reflecting mirror 21 frontally, it is reflected by the third plane reflecting mirror 21 and the direction of the reflected light beam is changed. to be consistent with the incident light of the fourth plane reflecting mirror 22 .
  • the white light is blocked by the groove structure of the sample 8 as shown in Figure 2 (a).
  • the near-infrared light penetrates the sample 8 but is modulated by the groove structure and reduces the focus as shown in Figure 2.
  • the near-infrared large numerical aperture beam can be converged to the bottom of the groove, as shown in (c) of Figure 2.
  • Step 1 Place the surface of the sample 9 to be measured on the confocal plane of the first microscopic objective lens 8 and the second microscopic objective lens 10, and obtain an image with aberration and low contrast on the first infrared detector 17.
  • the interference fringe pattern is shown in (a) in Figure 4.
  • Step 2 Use the second infrared detector 20 to monitor the pupil aberration of the microscope objective, use the piezoelectric ceramic PZT29 to drive the fifth plane reflector 28 and use the second infrared detector 20 to collect 4 phase-shifting interference patterns, and calculate the light Pupil aberration.
  • Step 3 Adjust the shape of the deformable mirror 13 according to the monitored pupil aberration, and observe the compensation result on the second infrared detector 20. After compensation, a clear image and high-contrast interference fringes are observed on the first infrared detector 17.
  • Step 4 Use the vertical scanning interference method to drive the fifth plane reflector 28 through the piezoelectric ceramic PZT29.
  • the first infrared detector 17 simultaneously collects the interference fringe pattern, and uses the vertical scanning interference algorithm to process the interference pattern.
  • Step 5 Finally obtain the depth and width measurement results of the groove structure of sample 9, as shown in Figure 5.

Abstract

A high-aspect-ratio micro-structured transmissive interference-microscopic nondestructive measurement apparatus and method. By using an advantage of near-infrared light being capable of penetrating through a silicon substrate, measurement can be performed by using a large numerical-aperture light beam. For the problem of the focusability of a large numerical-aperture light beam converged by a microscopic objective lens being reduced due to the large numerical-aperture light beam being modulated by a groove structure of a sample (9) under test, a microscopic objective lens exit-pupil aberration monitoring light path and an active aberration compensation system are provided; and for the problem of aberration being excessively great during detection in a reflective structure, a transmissive structure is used to reduce the aberration and improve measurement precision. The depth and width of said sample (9) are obtained by using a vertical scanning interference method. The high-aspect-ratio micro-structured transmissive interference-microscopic nondestructive measurement apparatus overcomes the difficulty of it being hard to perform nondestructive measurement on a high-aspect-ratio groove structure of a silicon-based MEMS device by using the existing measurement technology, and performs high-precision nondestructive measurement on the depth and width of a deep groove structure of said sample (9).

Description

高深宽比微结构透射式干涉显微无损测量装置及测量方法High aspect ratio microstructure transmission interference microscopy non-destructive measurement device and measurement method 技术领域Technical field
本发明涉及精密光学测量工程技术领域,具体涉及一种高深宽比微结构透射式干涉显微无损测量装置及测量方法,针对硅基MEMS器件沟槽结构的深度和宽度进行测量,特别适用于高深宽比的沟槽结构,通常MEMS高深宽比微结构宽度为1~10μm,深度为10~300μm的微结构,深宽比在5:1到20:1之间。The invention relates to the technical field of precision optical measurement engineering, and specifically relates to a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device and measurement method. It measures the depth and width of the trench structure of silicon-based MEMS devices, and is particularly suitable for high-depth applications. Width ratio trench structures, usually MEMS high aspect ratio microstructures with a width of 1 to 10 μm and a depth of 10 to 300 μm, have an aspect ratio between 5:1 and 20:1.
背景技术Background technique
在半导体行业,随着大规模集成电路和微纳集成光学系统,向立体方向发展、层数越来越多,需要加工用于电信号传输引线的深孔(TSV-through silicon vias);另一方面各种硅基MEMS传感器,为了不断提高传感器灵敏度,需要增加传感器中传感结构的响应面积,使得沟槽状结构的深度越来越大,但线宽(CD尺寸)却没有变大,甚至变小。这些类型的微结构,具有高深宽比特征,一般深宽比大于10:1,现在MEMS高深宽比微结构的沟槽宽度为3~10μm,深度为10~300μm,这种高深宽比微结构的发展对于驱动微机电系统技术在航空、航天、电子、生物、医疗等许多领域的应用将起到关键作用。In the semiconductor industry, as large-scale integrated circuits and micro-nano integrated optical systems develop in a three-dimensional direction with more and more layers, it is necessary to process deep holes (TSV-through silicon vias) for electrical signal transmission leads; another Regarding various silicon-based MEMS sensors, in order to continuously improve the sensor sensitivity, it is necessary to increase the response area of the sensing structure in the sensor, making the depth of the trench-like structure larger and larger, but the line width (CD size) does not become larger, or even become smaller. These types of microstructures have the characteristics of high aspect ratio. Generally, the aspect ratio is greater than 10:1. Now the trench width of MEMS high aspect ratio microstructure is 3~10μm and the depth is 10~300μm. This kind of high aspect ratio microstructure The development of microelectromechanical systems will play a key role in driving the application of microelectromechanical system technology in many fields such as aviation, aerospace, electronics, biology, and medicine.
国内外现有的对高深宽比微结构器件几何测量方法大致有两种:接触式测量和非接触式测量;对于接触式测量,最常用的仪器包括扫描电子显微镜SEM和原子力显微镜,通常采取破坏手段,即沿垂直于沟槽方向的一根线切开,使用扫描电镜(SEM)对剖面做探测成像。这种检测方法,属于有损检测,不利于过程中的工艺参数优化和工艺改进;非接触式测量主要指干涉测量技术,以光波干涉原理为基础进行测量,与其他测量技术相比,干涉测量可以实现无损测量。There are roughly two existing methods for geometric measurement of high aspect ratio microstructure devices at home and abroad: contact measurement and non-contact measurement. For contact measurement, the most commonly used instruments include scanning electron microscopes SEM and atomic force microscopes, which usually use destructive methods. The method is to cut along a line perpendicular to the direction of the trench, and use a scanning electron microscope (SEM) to detect and image the section. This detection method is destructive detection and is not conducive to process parameter optimization and process improvement in the process; non-contact measurement mainly refers to interferometric measurement technology, which is based on the principle of light wave interference. Compared with other measurement technologies, interferometric measurement Non-destructive measurements can be achieved.
近几年,以双光束干涉为原理的轮廓测试方法兴起,其中,白光干涉装置比较具有代表性,此类装置不用接触待测样品,无需破坏器件结构,即可完成对器件的三维形貌无损测量。由于白光的分辨率受限于显微物镜的数值孔径NA,因此必须使用大NA物镜提高分辨率,但是,白光会被待测样品高深宽比沟槽遮挡,导致大NA探测光无法到达沟槽底部,无法满足成像要求,现有研究报道表明,白光干涉显微镜和激光共焦显微镜测量微结构的高深宽比上限为10:1,如图2中的(a)所示,例如,一个沟槽宽度为3μm,深度为60μm,深宽比达20:1,需要NA≤0.025才能照射此沟槽底部,假设波长为550nm,此时成像分辨率超过 13.4μm,无法满足对3μm宽度底部的成像要求。尽管有人提出将待测样品倾斜旋转,使光束照射到深槽底部,但是对待测样品的倾斜旋转过程十分繁琐,不能一次对整个底部成像,因此,使用白光干涉仪无法直接测量硅基MEMS高深宽比结构。In recent years, profile testing methods based on the principle of double-beam interference have emerged. Among them, white light interference devices are relatively representative. Such devices do not need to contact the sample to be tested or destroy the device structure, and can complete the three-dimensional morphology of the device without damaging it. Measurement. Since the resolution of white light is limited by the numerical aperture NA of the microscope objective, a large NA objective lens must be used to improve the resolution. However, the white light will be blocked by the high aspect ratio grooves of the sample to be measured, resulting in the large NA detection light being unable to reach the grooves. At the bottom, the imaging requirements cannot be met. Existing research reports show that the upper limit of the high aspect ratio of microstructures measured by white light interference microscopy and laser confocal microscopy is 10:1, as shown in (a) in Figure 2, for example, a trench The width is 3μm, the depth is 60μm, and the aspect ratio reaches 20:1. NA ≤ 0.025 is required to illuminate the bottom of this trench. Assuming the wavelength is 550nm, the imaging resolution exceeds 13.4μm at this time, which cannot meet the imaging requirements for the bottom of the 3μm width. . Although some people have proposed to tilt and rotate the sample to be tested so that the beam is irradiated to the bottom of the deep groove, the tilt and rotation process of the sample to be tested is very cumbersome and the entire bottom cannot be imaged at one time. Therefore, the height, depth and width of silicon-based MEMS cannot be directly measured using a white light interferometer. Than structure.
使用近红外光可以穿透硅材料探测沟槽底部,如图2中的(b)所示,但对于高深宽比结构,显微物镜会聚的大数值孔径光束会被沟槽结构调制降低光束聚焦性,产生像差,严重影响了成像质量和干涉条纹,测量结果也因此产生巨大误差。Near-infrared light can penetrate the silicon material to detect the bottom of the trench, as shown in (b) in Figure 2. However, for high aspect ratio structures, the large numerical aperture beam converged by the microscope objective will be modulated by the trench structure and reduce the beam focus. properties, resulting in aberrations, which seriously affect the imaging quality and interference fringes, and result in huge errors in the measurement results.
中国专利《一种微纳深沟槽结构测量方法及装置》(CN200710053292.5),其方法是将红外光束投射到含有深沟槽结构的硅片表面,分析从深沟槽结构各分界面反射形成的干涉光得到测量反射光谱;采用等效介质理论构建该深沟槽结构等效多层薄膜堆栈光学模型的理论反射光谱,利用模拟退火算法和基于梯度的优化算法,通过理论反射光谱对该测量反射光谱进行拟合,进而提取沟槽的深度及宽度等集合特征参数。该专利所述方法需要预先对待测样品的沟槽结构进行建模并计算得到理论的反射光谱,通过与测量得到的光谱进行拟合得到沟槽深度和宽度的测量结果,其测量结果准确性受预先建立的理论模型影响,对于复杂结构或未知结构的待测样品建模难度大,难以保证测量结果的准确性。Chinese patent "A Micro-nano Deep Groove Structure Measuring Method and Device" (CN200710053292.5). The method is to project an infrared beam onto the surface of a silicon wafer containing a deep groove structure and analyze the reflection from each interface of the deep groove structure. The formed interference light is measured and the reflection spectrum is obtained; the equivalent medium theory is used to construct the theoretical reflection spectrum of the equivalent multi-layer film stack optical model of the deep trench structure, and the simulated annealing algorithm and the gradient-based optimization algorithm are used to calculate the theoretical reflection spectrum. The reflection spectrum is measured for fitting, and then collective characteristic parameters such as the depth and width of the groove are extracted. The method described in this patent needs to model the groove structure of the sample to be tested in advance and calculate the theoretical reflection spectrum. The measurement results of the groove depth and width are obtained by fitting with the measured spectrum. The accuracy of the measurement results is affected by Due to the influence of pre-established theoretical models, it is difficult to model samples with complex structures or unknown structures, making it difficult to ensure the accuracy of measurement results.
中国专利《高深宽比微结构反射式干涉显微无损测量装置》(ZL202010896309.9),其方法采用对硅基材料具有穿透能力的近红外谱段光源和对探测光波调制具有主动补偿能力的林尼克(Linnik)型干涉显微镜,测量高深宽比结构的三维形貌。该专利采用了反射式的结构,主要用于检测深度比较小的高深宽比结构,当对深度比较大的高深宽比结构进行检测时,由于其结构的局限性,较长的光程会引入较大的像差,难以保证测量结果的准确性。Chinese patent "High aspect ratio microstructure reflection type interference microscopy non-destructive measurement device" (ZL202010896309.9). The method uses a near-infrared spectrum light source with penetrating capabilities for silicon-based materials and an active compensation capability for detection light wave modulation. Linnik interference microscope is used to measure the three-dimensional morphology of high aspect ratio structures. This patent uses a reflective structure, which is mainly used to detect high aspect ratio structures with a small depth. When detecting high aspect ratio structures with a large depth, due to the limitations of its structure, the longer optical path will introduce Large aberration makes it difficult to ensure the accuracy of measurement results.
发明内容Contents of the invention
本发明的目的在于提供一种高深宽比微结构透射式干涉显微无损测量装置及测量方法,用以解决现有的干涉显微无损测量方法无法对MEMS高深宽比沟槽结构的深度和宽度进行测量的问题以及反射式干涉显微测量装置在测量时仍存在像差过大的问题。The purpose of the present invention is to provide a high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device and measurement method to solve the problem that the existing interference microscopy non-destructive measurement method cannot measure the depth and width of MEMS high aspect ratio trench structures. Problems in making measurements and reflection interference microscopy measurement devices still have problems with excessive aberrations during measurements.
实现本发明目的的技术解决方案为:一种高深宽比微结构透射式干涉显微无 损测量装置,包括近红外短相干光源、科勒照明系统、待测样品、第二显微物镜、第一中继镜组、变形镜、第二平面反射镜、第三立方分光棱镜、第四立方分光棱镜、管镜、第一红外探测器、光瞳镜、单色滤光片、第二红外探测器、第三平面反射镜、第四平面反射镜、第二中继镜组、第三显微物镜、补偿平板、第五平面反射镜、压电陶瓷PZT;第五平面反射镜设置在压电陶瓷PZT上。The technical solution to achieve the purpose of the present invention is: a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device, including a near-infrared short-coherence light source, a Kohler illumination system, a sample to be measured, a second microscope objective, a first center Following mirror group, deformable mirror, second plane reflector, third cubic beam splitting prism, fourth cubic beam splitting prism, tube mirror, first infrared detector, pupil mirror, monochromatic filter, second infrared detector, The third plane reflector, the fourth plane reflector, the second relay mirror group, the third microscope objective lens, the compensation plate, the fifth plane reflector, and the piezoelectric ceramic PZT; the fifth plane reflector is arranged on the piezoelectric ceramic PZT superior.
待测样品、第二显微物镜、第一中继镜组、第二平面反射镜、变形镜构成测试光路,第三平面反射镜、第四平面反射镜、第二中继镜组、第三显微物镜、补偿平板构成参考光路。The sample to be tested, the second microscope objective lens, the first relay lens group, the second plane reflector, and the deformation mirror constitute the test optical path. The third plane reflector, the fourth plane reflector, the second relay lens group, and the third The microscope objective lens and the compensation plate constitute the reference optical path.
所述科勒照明系统包括第一聚光镜、第一立方分光棱镜、第二聚光镜、第三聚光镜、第二立方分光棱镜、第一平面反射镜、第一显微物镜、第四聚光镜、第五聚光镜、第五立方分光棱镜、第五平面反射镜、第四显微物镜。The Kohler illumination system includes a first condenser, a first cubic beam splitter prism, a second condenser, a third condenser, a second cubic beam splitter, a first plane reflector, a first microscopic objective, a fourth condenser, and a fifth condenser. The fifth cubic beam splitting prism, the fifth plane reflector, and the fourth microscope objective lens.
所述压电陶瓷PZT和第一红外探测器连接构成同步扫描采集系统;变形镜和第二红外探测器配合构成像差检测光路和主动补偿系统。The piezoelectric ceramic PZT and the first infrared detector are connected to form a synchronous scanning and acquisition system; the deformable mirror and the second infrared detector cooperate to form an aberration detection optical path and an active compensation system.
近红外短相干光源发出多视场光束,经第一聚光镜汇聚至第一立方分光镜后分为测试光和参考光;测试光经第二聚光镜、第三聚光镜后至第二立方分光镜,经第二立方分光镜反射至第一平面反射镜,再经第一平面反射镜反射后经第二立方分光镜透射至第一显微物镜后,照明待测样品后穿透待测样品,再依次经过第二显微物镜、第一中继镜组、变形镜转折到达第二平面反射镜,经第二平面反射镜反射至第三立方分光棱镜,经第三立方分光棱镜透射至第四立方分光棱镜,第四立方分光棱镜将光分为两部分,一部分光经光瞳镜、单色滤光片后将第二显微物镜的光瞳成像在第二红外探测器上;另一部分光经管镜后将待测样品成像在第一红外探测器上;参考光依次经第五聚光镜、第四聚光镜后射入第五立方分光棱镜,经第五立方分光棱镜反射至压电陶瓷PZT上的第五平面反射镜,经第五平面反射镜反射后依次经第五立方分光棱镜、第四显微物镜、照明补偿平板、第三显微物镜、第二中继镜组、第四平面反射镜后,被第四平面反射镜反射至第三平面反射镜,再经第三平面反射镜反射至第三立方分光棱镜,第三立方分光棱镜将其反射至第四立方分光棱镜,第四立方分光棱镜将光分为两部分,一部分光经管镜后与测试光在第一红外探测器上发生干涉;另一部分光经光瞳镜、单色滤光片后与测试光在第二红外探测器上发生干涉,构建显微物镜出瞳像差监测光路,利用压电陶瓷PZT驱动第五平面反射镜移动,并使用第二红外探测器采集4幅移 相干涉图,计算获得第二显微物镜的光瞳像差;将第二显微物镜光瞳像差反馈到变形镜的形状,进而对光瞳像差进行补偿,构建像差主动补偿系统;采用垂直扫描干涉法通过压电陶瓷PZT驱动第五平面反射镜移动,在第一红外探测器上同步接收待测样品不同深度表面的干涉条纹图,同时使用压电陶瓷PZT控制待测样品移动,获得待测样品表面不同位置的干涉条纹图,最后采用垂直扫描干涉算法对干涉图进行处理得到待测样品沟槽的深度和宽度。The near-infrared short coherent light source emits a multi-field beam, which is condensed by the first condenser to the first cubic beam splitter and then divided into test light and reference light; the test light passes through the second condenser and the third condenser and then reaches the second cubic beam splitter. The second cubic beam splitter reflects to the first plane mirror, and then is reflected by the first plane mirror and then transmitted through the second cubic beam splitter to the first microscope objective. It illuminates the sample to be measured and then penetrates the sample to be measured, and then in sequence After passing through the second microscope objective lens, the first relay lens group and the deformable mirror, it reaches the second plane mirror, is reflected by the second plane mirror to the third cubic beam splitting prism, and is transmitted to the fourth cubic beam splitting prism through the third cubic beam splitting prism. Prism, the fourth cubic beam splitting prism divides the light into two parts. After one part of the light passes through the pupil mirror and the monochromatic filter, the pupil of the second microscopic objective lens is imaged on the second infrared detector; the other part of the light passes through the tube mirror. Finally, the sample to be measured is imaged on the first infrared detector; the reference light passes through the fifth condenser and the fourth condenser in sequence and then enters the fifth cubic beam splitting prism, and is reflected by the fifth cubic beam splitting prism to the fifth beam on the piezoelectric ceramic PZT. The plane reflector, after being reflected by the fifth plane mirror, passes through the fifth cubic beam splitting prism, the fourth microscope objective lens, the illumination compensation plate, the third microscope objective lens, the second relay lens group, and the fourth plane reflector in sequence. It is reflected by the fourth plane reflector to the third plane reflector, and then reflected to the third cubic beam splitting prism through the third plane reflector. The third cubic beam splitting prism reflects it to the fourth cubic beam splitting prism. The fourth cubic beam splitting prism will The light is divided into two parts. One part of the light interferes with the test light on the first infrared detector after passing through the tube mirror; the other part of the light interferes with the test light on the second infrared detector after passing through the pupil mirror and monochromatic filter. , construct an optical path for monitoring the exit pupil aberration of the microscope objective, use piezoelectric ceramic PZT to drive the movement of the fifth plane mirror, and use the second infrared detector to collect 4 phase-shifting interference patterns, and calculate the pupil of the second microscope objective Aberration; feedback the pupil aberration of the second microscope objective lens to the shape of the deformable mirror, thereby compensating the pupil aberration, and constructing an active aberration compensation system; using vertical scanning interference method to drive the fifth plane through piezoelectric ceramic PZT The reflector moves, and the first infrared detector simultaneously receives the interference fringe patterns on the surface of the sample to be measured at different depths. At the same time, the piezoelectric ceramic PZT is used to control the movement of the sample to be measured, and the interference fringe patterns at different positions on the surface of the sample to be measured are obtained. Finally, using The vertical scanning interference algorithm processes the interference pattern to obtain the depth and width of the groove of the sample to be tested.
一种高深宽比微结构透射式干涉显微无损测量方法,步骤如下:A transmission interference microscopy non-destructive measurement method for high aspect ratio microstructures. The steps are as follows:
步骤1、将待测样品放在第一显微物镜和第二显微物镜的共焦面上,并在第一红外探测器上得到带有像差的图像和低对比度的干涉条纹图;Step 1. Place the sample to be measured on the confocal plane of the first microscopic objective lens and the second microscopic objective lens, and obtain an image with aberrations and a low-contrast interference fringe pattern on the first infrared detector;
步骤2、使用第二红外探测器监测第二显微物镜的光瞳像差,利用压电陶瓷PZT驱动第五平面反射镜移动,并使用第二红外探测器采集4幅移相干涉图,计算获得光瞳像差。Step 2. Use the second infrared detector to monitor the pupil aberration of the second microscope objective, use the piezoelectric ceramic PZT to drive the fifth plane mirror to move, and use the second infrared detector to collect 4 phase-shifting interference patterns, and calculate Obtain pupil aberration.
步骤3、变形镜根据监测到的光瞳像差调整形状,在第二红外探测器上观察补偿结果,补偿后在第一红外探测器上观察到清晰的图像和高对比度的干涉条纹图。Step 3. The deformable mirror adjusts its shape according to the monitored pupil aberration, and the compensation results are observed on the second infrared detector. After compensation, a clear image and a high-contrast interference fringe pattern are observed on the first infrared detector.
步骤4、采用垂直扫描干涉法通过压电陶瓷PZT驱动第五平面反射镜,第一红外探测器同步采集干涉条纹图,并采用垂直扫描干涉算法处理干涉图。Step 4: Use the vertical scanning interference method to drive the fifth plane reflector through the piezoelectric ceramic PZT. The first infrared detector simultaneously collects the interference fringe pattern, and uses the vertical scanning interference algorithm to process the interference pattern.
步骤5、最终得到待测样品沟槽结构的深度和宽度。Step 5: Finally obtain the depth and width of the groove structure of the sample to be tested.
本发明与现有技术相比,其显著优点在于:Compared with the prior art, the significant advantages of the present invention are:
(1)针对硅基MEMS高深宽比沟槽结构的待测样品采用近红外短相干光源,穿透深槽到达底部,可以使用大NA显微物镜,解决了大NA光束无法探测高深宽比沟槽结构底部的问题。(1) For the sample to be tested with a silicon-based MEMS high aspect ratio trench structure, a near-infrared short coherent light source is used to penetrate the deep trench to the bottom. A large NA microscope objective can be used, which solves the problem that the large NA beam cannot detect the high aspect ratio trench. Problems with the bottom of the trough structure.
(2)针对显微物镜会聚的大NA光束被待测样品沟槽结构调制降低光束聚焦性的问题,构建显微物镜出瞳像差监测光路和像差主动补偿系统,可以监测由于待测样品深沟槽结构产生的像差,并反馈到变形镜对像差进行主动补偿,提高成像质量和干涉条纹对比度,保证测量精度。(2) In order to solve the problem that the large NA beam converged by the microscope objective lens is modulated by the groove structure of the sample to be tested and reduces the focus of the beam, a microscopic objective lens exit pupil aberration monitoring optical path and an aberration active compensation system are constructed to monitor the changes caused by the sample to be tested. The aberration generated by the deep groove structure is fed back to the deformable mirror to actively compensate for the aberration, improving imaging quality and interference fringe contrast, and ensuring measurement accuracy.
(3)针对反射式显微干涉测量装置在测量待测物时仍然存在像差过大的问题,采用透射式结构,与反射式结构相比,光程减少了一半,从而使得像差减小,测量精度更高。(3) In order to solve the problem of excessive aberration when measuring the object to be measured by the reflective micro-interferometry device, a transmissive structure is adopted. Compared with the reflective structure, the optical path is reduced by half, thereby reducing the aberration. , higher measurement accuracy.
附图说明Description of drawings
图1为高深宽比微结构透射式干涉显微无损测量装置示意图。Figure 1 is a schematic diagram of a transmission interference microscopy non-destructive measurement device for high aspect ratio microstructures.
图2为汇聚光束探测待测样品沟槽底部示意图,其中图2中的(a)为使用白光探测被侧壁遮挡图;图2中的(b)为使用近红外光穿透侧壁探测底部,但光束聚焦性变差图;图2中的(c)为使用变形镜补偿后光束能够汇聚到沟槽底部图。Figure 2 is a schematic diagram of converging a beam to detect the bottom of the trench of the sample to be tested. (a) in Figure 2 shows the use of white light to detect the bottom blocked by the side wall; (b) in Figure 2 shows the use of near-infrared light to penetrate the side wall to detect the bottom. , but the beam focusability deteriorates; (c) in Figure 2 shows that the beam can be converged to the bottom of the groove after compensation using a deformable mirror.
图3为光瞳像差监测与主动补偿原理框图。Figure 3 is a functional block diagram of pupil aberration monitoring and active compensation.
图4为红外探测器采集到的干涉图,其中图4中的(a)为变形镜补偿前的干涉图;图4中的(b)为变形镜补偿后的干涉图。Figure 4 shows the interference pattern collected by the infrared detector. (a) in Figure 4 is the interference pattern before compensation by the deformable mirror; (b) in Figure 4 is the interference pattern after compensation by the deformable mirror.
图5为高深宽比沟槽结构的测量结果图。Figure 5 shows the measurement results of the high aspect ratio trench structure.
具体实施方式Detailed ways
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合说明书附图对本发明的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present invention more obvious and understandable, the specific implementation modes of the present invention will be described in detail below with reference to the accompanying drawings.
结合图1,一种高深宽比微结构透射式干涉显微无损测量装置,包括近红外短相干光源1、科勒照明系统、待测样品9、第二显微物镜10、第一中继镜组11、变形镜13、第二平面反射镜12、第三立方分光棱镜14、第四立方分光棱镜15、管镜16、第一红外探测器17、光瞳镜18、单色滤光片19、第二红外探测器20、第三平面反射镜21、第四平面反射镜22、第二中继镜组23、第三显微物镜24、补偿平板25、第五平面反射镜28、压电陶瓷PZT29;第五平面反射镜28设置在压电陶瓷PZT29上。With reference to Figure 1, a high aspect ratio microstructure transmission interference microscopy non-destructive measurement device includes a near-infrared short coherent light source 1, a Kohler illumination system, a sample to be measured 9, a second microscopic objective lens 10, and a first relay lens group 11. Deformable mirror 13, second plane mirror 12, third cubic beam splitting prism 14, fourth cubic beam splitting prism 15, tube mirror 16, first infrared detector 17, pupil mirror 18, monochromatic filter 19, The second infrared detector 20, the third plane mirror 21, the fourth plane mirror 22, the second relay lens group 23, the third microscope objective lens 24, the compensation plate 25, the fifth plane mirror 28, and piezoelectric ceramics PZT29; the fifth plane reflector 28 is provided on the piezoelectric ceramic PZT29.
待测样品9、第二显微物镜10、第一中继镜组11、第二平面反射镜12、变形镜13构成测试光路,第三平面反射镜21、第四平面反射镜22、第二中继镜组23、第三显微物镜24、补偿平板25构成参考光路。The sample to be tested 9, the second microscope objective lens 10, the first relay lens group 11, the second plane mirror 12, and the deformation mirror 13 constitute the test optical path. The third plane mirror 21, the fourth plane mirror 22, the second The relay lens group 23, the third microscope objective lens 24, and the compensation plate 25 constitute a reference optical path.
所述科勒照明系统包括第一聚光镜2、第一立方分光棱镜3、第二聚光镜4、第三聚光镜5、第二立方分光棱镜7、第一平面反射镜6、第一显微物镜8、第四聚光镜30、第五聚光镜31、第五立方分光棱镜27、第五平面反射镜29、第四显微物镜26。The Kohler illumination system includes a first condenser 2, a first cubic beam splitter prism 3, a second condenser 4, a third condenser 5, a second cubic beam splitter 7, a first plane reflector 6, a first microscopic objective lens 8, Four condenser lenses 30 , a fifth condenser lens 31 , a fifth cubic beam splitter prism 27 , a fifth plane reflector 29 , and a fourth microscopic objective lens 26 .
所述压电陶瓷PZT29和第一红外探测器17连接构成同步扫描采集系统;变形镜13和第二红外探测器20配合构成像差检测光路和主动补偿系统。The piezoelectric ceramic PZT29 and the first infrared detector 17 are connected to form a synchronous scanning and acquisition system; the deformable mirror 13 and the second infrared detector 20 cooperate to form an aberration detection optical path and an active compensation system.
近红外短相干光源1发出多视场光束,经第一聚光镜2汇聚至第一立方分光 镜3后分为测试光和参考光;测试光经第二聚光镜4、第三聚光镜5后至第二立方分光镜7,经第二立方分光镜7反射至第一平面反射镜6,再经第一平面反射镜6反射后经第二立方分光镜7透射至第一显微物镜8后,照明待测样品9后穿透待测样品9,再依次经过第二显微物镜10、第一中继镜组11、变形镜13转折到达第二平面反射镜12,经第二平面反射镜12反射至第三立方分光棱镜14,经第三立方分光棱镜14透射至第四立方分光棱镜15,第四立方分光棱镜15将光分为两部分,一部分光经光瞳镜18、单色滤光片19后将第二显微物镜10的光瞳成像在第二红外探测器20上;另一部分光经管镜16后将待测样品9成像在第一红外探测器17上;参考光依次经第五聚光镜31、第四聚光镜30后射入第五立方分光棱镜27,经第五立方分光棱镜27反射至压电陶瓷PZT29上的第五平面反射镜28,经第五平面反射镜28反射后依次经第五立方分光棱镜27、第四显微物镜26、照明补偿平板25、第三显微物镜24、第二中继镜组23、第四平面反射镜22后,被第四平面反射镜22反射至第三平面反射镜21,再经第三平面反射镜21反射至第三立方分光棱镜14,第三立方分光棱镜14将其反射至第四立方分光棱镜15,第四立方分光棱镜15将光分为两部分,一部分光经管镜16后与测试光在第一红外探测器17上发生干涉;另一部分光经光瞳镜18、单色滤光片19后与测试光在第二红外探测器20上发生干涉,构建显微物镜出瞳像差监测光路,利用压电陶瓷PZT29驱动第五平面反射镜28移动,并使用第二红外探测器20采集4幅移相干涉图,计算获得第二显微物镜10的光瞳像差;将第二显微物镜10光瞳像差反馈到变形镜13的形状,进而对光瞳像差进行补偿,构建像差主动补偿系统;采用垂直扫描干涉法通过压电陶瓷PZT29驱动第五平面反射镜28移动,在第一红外探测器17上同步接收待测样品9不同深度表面的干涉条纹图,同时使用压电陶瓷PZT29控制待测样品9移动,获得待测样品9表面不同位置的干涉条纹图,最后采用垂直扫描干涉算法对干涉图进行处理得到待测样品9沟槽的深度和宽度。The near-infrared short coherent light source 1 emits a multi-field light beam, which is condensed to the first cubic beam splitter 3 through the first condenser 2 and then divided into test light and reference light; the test light passes through the second condenser 4 and the third condenser 5 to the second The cubic beam splitter 7 is reflected by the second cubic beam splitter 7 to the first plane reflector 6, and then reflected by the first plane reflector 6 and then transmitted to the first microscope objective lens 8 by the second cubic beam splitter 7, and is then illuminated. After measuring the sample 9, it penetrates the sample 9 to be measured, and then passes through the second microscope objective lens 10, the first relay lens group 11, and the deformation mirror 13 in turn to reach the second plane reflector 12, and is reflected by the second plane reflector 12 to The third cubic beam splitting prism 14 is transmitted to the fourth cubic beam splitting prism 15 through the third cubic beam splitting prism 14. The fourth cubic beam splitting prism 15 divides the light into two parts, and part of the light passes through the pupil mirror 18 and the monochromatic filter 19 Finally, the pupil of the second microscope objective lens 10 is imaged on the second infrared detector 20; another part of the light passes through the tube lens 16 and the sample 9 to be measured is imaged on the first infrared detector 17; the reference light passes through the fifth condenser in sequence 31. The fourth condenser 30 then enters the fifth cubic beam splitting prism 27 and is reflected by the fifth cubic beam splitting prism 27 to the fifth plane reflector 28 on the piezoelectric ceramic PZT 29. After being reflected by the fifth plane reflector 28, it is sequentially reflected by the fifth plane mirror 28. After the five cubic beam splitting prism 27, the fourth microscopic objective lens 26, the illumination compensation plate 25, the third microscopic objective lens 24, the second relay lens group 23 and the fourth plane reflector 22, it is reflected by the fourth plane reflector 22 to The third plane reflection mirror 21 then reflects it to the third cubic beam splitting prism 14. The third cubic beam splitting prism 14 reflects it to the fourth cubic beam splitting prism 15. The fourth cubic beam splitting prism 15 splits the light. It is two parts. One part of the light interferes with the test light on the first infrared detector 17 after passing through the tube mirror 16; the other part of the light passes through the pupil mirror 18 and the monochromatic filter 19 and interferes with the test light on the second infrared detector 20. Interference occurs on the microscope objective lens, an optical path for monitoring the exit pupil aberration of the microscope objective is constructed, the piezoelectric ceramic PZT29 is used to drive the fifth plane reflector 28 to move, and the second infrared detector 20 is used to collect 4 phase-shifting interference patterns, and the second display is calculated and obtained. The pupil aberration of the micro objective lens 10; feedback the pupil aberration of the second micro objective lens 10 to the shape of the deformable mirror 13, thereby compensating the pupil aberration, and constructing an active aberration compensation system; using the vertical scanning interference method to pass The piezoelectric ceramic PZT29 drives the fifth plane reflector 28 to move, and simultaneously receives the interference fringe patterns of the surface of the sample 9 at different depths on the first infrared detector 17. At the same time, the piezoelectric ceramic PZT29 is used to control the movement of the sample 9 to be measured, and obtain the sample 9 to be measured. The interference fringe patterns at different positions on the surface of sample 9 are measured, and finally the vertical scanning interference algorithm is used to process the interference pattern to obtain the depth and width of the grooves of sample 9 to be measured.
所述测试光路与参考光路完全一致,其中测试光路与中的待测样品9与参考光路中补偿板25位置对应。The test optical path is completely consistent with the reference optical path, and the position of the sample to be tested 9 in the test optical path corresponds to the position of the compensation plate 25 in the reference optical path.
所述近红外短相干光源1位于第一聚光镜2的前焦面上,第一聚光镜2、第二聚光镜4共焦,第二聚光镜4、第三聚光镜5共焦,第一显微物镜8和第三聚光镜5共焦;第一聚光镜2与第五聚光镜31共焦,第五聚光镜31与第四聚光镜 30共焦,第四聚光镜30与第四显微物镜26共焦。The near-infrared short coherent light source 1 is located on the front focal plane of the first condenser 2, the first condenser 2 and the second condenser 4 are confocal, the second condenser 4 and the third condenser 5 are confocal, the first microscopic objective lens 8 and The third condenser lens 5 is confocal; the first condenser lens 2 and the fifth condenser lens 31 are confocal, the fifth condenser lens 31 and the fourth condenser lens 30 are confocal, and the fourth condenser lens 30 and the fourth microscope objective lens 26 are confocal.
所述待测样品9在第一显微物镜8和第二显微物镜10的焦面上,第二显微物镜10的光瞳面与变形镜13关于第一中继镜组11共轭,第一中继镜组11包括两个相同并共焦的聚光镜,焦点位置放置光阑阻挡杂散光。The sample to be tested 9 is on the focal plane of the first microscopic objective lens 8 and the second microscopic objective lens 10, and the pupil plane of the second microscopic objective lens 10 is conjugated with the deformable mirror 13 with respect to the first relay lens group 11, The first relay lens group 11 includes two identical and confocal condenser lenses, with an aperture placed at the focus position to block stray light.
所述第一红外探测器17、第一中继镜组11的共焦面和待测样品9共轭。The first infrared detector 17 , the confocal surface of the first relay lens group 11 and the sample to be measured 9 are conjugate.
所述第二显微物镜10的光瞳经过第一中继镜组11、变形镜13、光瞳镜18和单色滤光片19成像在第二红外探测器20上,第二显微物镜10的光瞳、变形镜13和第二红外探测器20共轭,单色滤光片19的中心波长与近红外短相干光源1的中心波长相同;利用压电陶瓷PZT29驱动第五平面反射镜28并使用第二红外探测器20采集4幅移相干涉图,计算获得光瞳像差;根据得到的光瞳像差,主动调整变形镜13进行像差补偿,使得大数值孔径光束汇聚到待测样品9沟槽底部并穿透待测样品9,相比于反射式结构测试光路两次经过光瞳面,采用透射式结构测试光穿透样品后只经过第二显微物镜10一次,光瞳像差减少一半,这表明透射式结构能够解决更大深宽比结构带来的像差。The pupil of the second microscopic objective lens 10 is imaged on the second infrared detector 20 through the first relay lens group 11, the deformation mirror 13, the pupil lens 18 and the monochromatic filter 19. The second microscopic objective lens The pupil of 10, the deformable mirror 13 and the second infrared detector 20 are conjugate, and the central wavelength of the monochromatic filter 19 is the same as the central wavelength of the near-infrared short coherent light source 1; the piezoelectric ceramic PZT29 is used to drive the fifth plane reflector 28 And use the second infrared detector 20 to collect 4 phase-shifted interference patterns, and calculate the pupil aberration; according to the obtained pupil aberration, the deformable mirror 13 is actively adjusted to compensate for the aberration, so that the large numerical aperture beam converges to the target. The bottom of the groove of the sample 9 is measured and penetrates the sample 9 to be tested. Compared with the reflective structure test light path passing through the pupil surface twice, the transmission structure test light only passes through the second microscope objective 10 once after penetrating the sample. Pupil aberration is reduced by half, which shows that the transmissive structure can solve the aberration caused by the larger aspect ratio structure.
所述测试光穿透样品硅基底会额外产生透射波像差,在参考光路中使用补偿板25进行抵消。The test light penetrating the silicon substrate of the sample will additionally produce transmitted wave aberration, which is offset by using the compensation plate 25 in the reference optical path.
进一步地,变形镜13的入射光和出射光垂直,出射光正面照射第二平面反射镜12,并经第二平面反射镜12反射,反射出的光束方向转为与变形镜13的入射光一致。Further, the incident light and the outgoing light of the deformable mirror 13 are perpendicular, and the outgoing light irradiates the second plane reflecting mirror 12 frontally and is reflected by the second plane reflecting mirror 12. The direction of the reflected light beam is changed to be consistent with the incident light of the deforming mirror 13. .
进一步地,第四平面反射镜22的出射光和入射光垂直,第四平面反射镜22的出射光正面照射第三平面反射镜21后,经第三平面反射镜21反射,反射的光束方向转为与第四平面反射镜22的入射光一致。Further, the outgoing light of the fourth plane reflecting mirror 22 is perpendicular to the incident light. After the outgoing light of the fourth plane reflecting mirror 22 irradiates the third plane reflecting mirror 21 frontally, it is reflected by the third plane reflecting mirror 21 and the direction of the reflected light beam is changed. to be consistent with the incident light of the fourth plane reflecting mirror 22 .
结合图2,所述白光被待测样品8沟槽结构遮挡如图2中的(a)所示,近红外光穿透待测样品8但被沟槽结构调制降低聚焦性如图2中的(b)所示,使用变形镜12补偿像差后近红外大数值孔径光束能够汇聚到沟槽底部如图2中的(c)所示。Combined with Figure 2, the white light is blocked by the groove structure of the sample 8 as shown in Figure 2 (a). The near-infrared light penetrates the sample 8 but is modulated by the groove structure and reduces the focus as shown in Figure 2. As shown in (b), after using the deformable mirror 12 to compensate for aberration, the near-infrared large numerical aperture beam can be converged to the bottom of the groove, as shown in (c) of Figure 2.
结合图3、图4和图5,一种高深宽比微结构透射式干涉显微无损测量方法,步骤如下:Combining Figure 3, Figure 4 and Figure 5, a transmission interference microscopy non-destructive measurement method for high aspect ratio microstructures, the steps are as follows:
步骤1、将待测样品9的表面放在第一显微物镜8和第二显微物镜10的共焦面上,并在第一红外探测器17上得到带有像差的图像和低对比度的干涉条纹 图,如图4中的(a)所示。Step 1. Place the surface of the sample 9 to be measured on the confocal plane of the first microscopic objective lens 8 and the second microscopic objective lens 10, and obtain an image with aberration and low contrast on the first infrared detector 17. The interference fringe pattern is shown in (a) in Figure 4.
步骤2、使用第二红外探测器20监测显微物镜光瞳像差,利用压电陶瓷PZT29驱动第五平面反射镜28并使用第二红外探测器20采集4幅移相干涉图,计算获得光瞳像差。Step 2: Use the second infrared detector 20 to monitor the pupil aberration of the microscope objective, use the piezoelectric ceramic PZT29 to drive the fifth plane reflector 28 and use the second infrared detector 20 to collect 4 phase-shifting interference patterns, and calculate the light Pupil aberration.
步骤3、变形镜13根据监测到的光瞳像差调整形状,在第二红外探测器20上观察补偿结果,补偿后在第一红外探测器17上观察到清晰的图像和高对比度的干涉条纹图,如图4中的(b)所示。Step 3: Adjust the shape of the deformable mirror 13 according to the monitored pupil aberration, and observe the compensation result on the second infrared detector 20. After compensation, a clear image and high-contrast interference fringes are observed on the first infrared detector 17. Figure, as shown in (b) in Figure 4.
步骤4、采用垂直扫描干涉法通过压电陶瓷PZT29驱动第五平面反射镜28,第一红外探测器17同步采集干涉条纹图,并采用垂直扫描干涉算法处理干涉图。Step 4: Use the vertical scanning interference method to drive the fifth plane reflector 28 through the piezoelectric ceramic PZT29. The first infrared detector 17 simultaneously collects the interference fringe pattern, and uses the vertical scanning interference algorithm to process the interference pattern.
步骤5、最终得到待测样品9沟槽结构的深度和宽度测量结果,如图5所示。Step 5: Finally obtain the depth and width measurement results of the groove structure of sample 9, as shown in Figure 5.

Claims (10)

  1. 一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:包括近红外短相干光源(1)、科勒照明系统、待测样品(9)、第二显微物镜(10)、第一中继镜组(11)、变形镜(13)、第二平面反射镜(12)、第三立方分光棱镜(14)、第四立方分光棱镜(15)、管镜(16)、第一红外探测器(17)、光瞳镜(18)、单色滤光片(19)、第二红外探测器(20)、第三平面反射镜(21)、第四平面反射镜(22)、第二中继镜组(23)、第三显微物镜(24)、补偿平板(25)、第五平面反射镜(28)、压电陶瓷PZT(29);第五平面反射镜(28)设置在压电陶瓷PZT(29)上;A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device, which is characterized by: including a near-infrared short-coherence light source (1), a Kohler illumination system, a sample to be measured (9), a second microscope objective lens (10), The first relay mirror group (11), the deformable mirror (13), the second plane reflector (12), the third cubic beam splitting prism (14), the fourth cubic beam splitting prism (15), the tube mirror (16), the third An infrared detector (17), pupil mirror (18), monochromatic filter (19), second infrared detector (20), third plane reflector (21), fourth plane reflector (22) , the second relay lens group (23), the third microscope objective lens (24), the compensation plate (25), the fifth plane reflector (28), the piezoelectric ceramic PZT (29); the fifth plane reflector (28 ) is set on the piezoelectric ceramic PZT (29);
    待测样品(9)、第二显微物镜(10)、第一中继镜组(11)、第二平面反射镜(12)、变形镜(13)构成测试光路,第三平面反射镜(21)、第四平面反射镜(22)、第二中继镜组(23)、第三显微物镜(24)、补偿平板(25)构成参考光路;The sample to be tested (9), the second microscope objective lens (10), the first relay lens group (11), the second plane reflector (12), and the deformation mirror (13) constitute the test optical path, and the third plane reflector (12) 21), the fourth plane reflector (22), the second relay lens group (23), the third microscope objective lens (24), and the compensation plate (25) constitute the reference optical path;
    所述科勒照明系统包括第一聚光镜(2)、第一立方分光棱镜(3)、第二聚光镜(4)、第三聚光镜(5)、第二立方分光棱镜(7)、第一平面反射镜(6)、第一显微物镜(8)、第四聚光镜(30)、第五聚光镜(31)、第五立方分光棱镜(27)、第五平面反射镜(29)、第四显微物镜(26);The Kohler lighting system includes a first condenser (2), a first cubic beam splitter prism (3), a second condenser (4), a third condenser (5), a second cubic beam splitter prism (7), and a first plane reflector. (6), the first microscopic objective lens (8), the fourth condenser lens (30), the fifth condenser lens (31), the fifth cubic beam splitter prism (27), the fifth plane reflector (29), the fourth microscopic objective lens (26);
    所述压电陶瓷PZT(29)和第一红外探测器(17)连接构成同步扫描采集系统;变形镜(13)和第二红外探测器(20)配合构成像差检测光路和主动补偿系统;The piezoelectric ceramic PZT (29) and the first infrared detector (17) are connected to form a synchronous scanning acquisition system; the deformable mirror (13) and the second infrared detector (20) cooperate to form an aberration detection optical path and an active compensation system;
    近红外短相干光源(1)发出多视场光束,经第一聚光镜(2)汇聚至第一立方分光镜(3)后分为测试光和参考光;测试光经第二聚光镜(4)、第三聚光镜(5)后至第二立方分光镜(7),经第二立方分光镜(7)反射至第一平面反射镜(6),再经第一平面反射镜(6)反射后经第二立方分光镜(7)透射至第一显微物镜(8)后,照明待测样品(9)后穿透待测样品(9),再依次经过第二显微物镜(10)、第一中继镜组(11)、变形镜(13)转折到达第二平面反射镜(12),经第二平面反射镜(12)反射至第三立方分光棱镜(14),经第三立方分光棱镜(14)透射至第四立方分光棱镜(15),第四立方分光棱镜(15)将光分为两部分,一部分光经光瞳镜(18)、单色滤光片(19)后将第二显微物镜(10)的光瞳成像在第二红外探测器(20)上;另一部分光经管镜(16)后将待测样品(9)成像在第一红外探测器(17)上;参考光依次经第五聚光镜(31)、第四聚光镜(30)后射入第五立方分光棱镜(27),经第五立方分光棱镜(27)反射至压电 陶瓷PZT(29)上的第五平面反射镜(28),经第五平面反射镜(28)反射后依次经第五立方分光棱镜(27)、第四显微物镜(26)、照明补偿平板(25)、第三显微物镜(24)、第二中继镜组(23)、第四平面反射镜(22)后,被第四平面反射镜(22)反射至第三平面反射镜(21),再经第三平面反射镜(21)反射至第三立方分光棱镜(14),第三立方分光棱镜(14)将其反射至第四立方分光棱镜(15),第四立方分光棱镜(15)将光分为两部分,一部分光经管镜(16)后与测试光在第一红外探测器(17)上发生干涉;另一部分光经光瞳镜(18)、单色滤光片(19)后与测试光在第二红外探测器(20)上发生干涉,利用压电陶瓷PZT(29)驱动第五平面反射镜(28)移动,并使用第二红外探测器(20)采集4幅移相干涉图,计算获得第二显微物镜(10)的光瞳像差;将第二显微物镜(10)光瞳像差反馈到变形镜(13)的形状,进而对光瞳像差进行补偿;采用垂直扫描干涉法通过压电陶瓷PZT(29)驱动第五平面反射镜(28)移动,在第一红外探测器(17)上同步接收待测样品(9)不同深度表面的干涉条纹图,同时使用压电陶瓷PZT(29)控制待测样品(9)移动,获得待测样品(9)表面不同位置的干涉条纹图,最后采用垂直扫描干涉算法对干涉图进行处理得到待测样品(9)沟槽的深度和宽度。The near-infrared short coherent light source (1) emits a multi-field light beam, which is condensed to the first cubic beam splitter (3) through the first condenser (2) and then divided into test light and reference light; the test light passes through the second condenser (4), After the third condenser (5), it reaches the second cubic beam splitter (7), and is reflected by the second cubic beam splitter (7) to the first plane reflector (6), and then reflected by the first plane reflector (6). After the second cubic beam splitter (7) transmits to the first microscope objective lens (8), it illuminates the sample to be measured (9), penetrates the sample to be measured (9), and then passes through the second microscope objective lens (10), A relay lens group (11) and a deformable mirror (13) turn to reach the second plane reflector (12), and are reflected by the second plane reflector (12) to the third cubic beam splitting prism (14). The prism (14) is transmitted to the fourth cubic dichroic prism (15). The fourth cubic dichroic prism (15) divides the light into two parts. A part of the light passes through the pupil mirror (18) and the monochromatic filter (19). The pupil of the second microscope objective lens (10) is imaged on the second infrared detector (20); the other part of the light is imaged on the first infrared detector (17) after passing through the tube lens (16). ; The reference light passes through the fifth condenser (31) and the fourth condenser (30) in sequence, then enters the fifth cubic beam splitter prism (27), and is reflected by the fifth cubic beam splitter prism (27) to the piezoelectric ceramic PZT (29). The fifth plane reflector (28), after being reflected by the fifth plane reflector (28), is sequentially passed through the fifth cubic beam splitting prism (27), the fourth microscope objective lens (26), the illumination compensation plate (25), and the third display After the micro objective lens (24), the second relay lens group (23), and the fourth plane mirror (22), it is reflected by the fourth plane mirror (22) to the third plane mirror (21), and then through the third plane mirror (21). The plane reflector (21) reflects to the third cubic beam splitting prism (14), the third cubic beam splitting prism (14) reflects it to the fourth cubic beam splitting prism (15), and the fourth cubic beam splitting prism (15) divides the light into Two parts, one part of the light interferes with the test light after passing through the tube mirror (16) on the first infrared detector (17); the other part of the light passes through the pupil mirror (18) and the monochromatic filter (19) and interferes with the test light. Interference occurs on the second infrared detector (20), the piezoelectric ceramic PZT (29) is used to drive the fifth plane reflector (28) to move, and the second infrared detector (20) is used to collect 4 phase-shifting interference patterns, The pupil aberration of the second microscopic objective lens (10) is calculated and obtained; the pupil aberration of the second microscopic objective lens (10) is fed back to the shape of the deformable mirror (13), thereby compensating the pupil aberration; using vertical The scanning interference method drives the fifth plane reflector (28) to move through the piezoelectric ceramic PZT (29), and simultaneously receives the interference fringe patterns of the surface of the sample (9) at different depths at different depths on the first infrared detector (17), and simultaneously uses The piezoelectric ceramic PZT (29) controls the movement of the sample to be tested (9) to obtain interference fringe patterns at different positions on the surface of the sample to be tested (9). Finally, a vertical scanning interference algorithm is used to process the interference pattern to obtain the grooves of the sample to be tested (9). The depth and width of the groove.
  2. 根据权利要求1所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述测试光路与参考光路完全一致,其中测试光路中的待测样品(9)位置与参考光路中的补偿板(25)位置相对应。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 1, characterized in that: the test light path is completely consistent with the reference light path, wherein the position of the sample to be tested (9) in the test light path is consistent with that of the reference light path. The position of the compensation plate (25) in the reference optical path corresponds to that.
  3. 根据权利要求2所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述近红外短相干光源(1)位于第一聚光镜(2)的前焦面上,第一聚光镜(2)、第二聚光镜(4)共焦,第二聚光镜(4)、第三聚光镜(5)共焦,第一显微物镜(8)和第三聚光镜(5)共焦;第一聚光镜(2)与第五聚光镜(31)共焦,第五聚光镜(31)与第四聚光镜(30)共焦,第四聚光镜(30)与第四显微物镜(26)共焦。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 2, characterized in that: the near-infrared short coherent light source (1) is located on the front focal plane of the first condenser (2), The first condenser lens (2) and the second condenser lens (4) are confocal, the second condenser lens (4) and the third condenser lens (5) are confocal, and the first microscopic objective lens (8) and the third condenser lens (5) are confocal; The first condenser lens (2) and the fifth condenser lens (31) are confocal, the fifth condenser lens (31) and the fourth condenser lens (30) are confocal, and the fourth condenser lens (30) and the fourth microscope objective lens (26) are confocal.
  4. 根据权利要求3所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述待测样品(9)在第一显微物镜(8)和第二显微物镜(10)的焦面上,第二显微物镜(10)的光瞳面与变形镜(13)关于第一中继镜组(11)共轭,第一中继镜组(11)包括两个相同并共焦的聚光镜,焦点位置放置光阑阻挡杂散光。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 3, characterized in that: the sample to be measured (9) is between the first microscopic objective lens (8) and the second microscopic objective lens. (10), the pupil surface of the second microscopic objective lens (10) and the deformable mirror (13) are conjugate with respect to the first relay lens group (11). The first relay lens group (11) includes two An identical and confocal condenser, with an aperture placed at the focal point to block stray light.
  5. 根据权利要求4所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述第一红外探测器(17)、第一中继镜组(11)的共焦面和待测样品(9)共轭。A high aspect ratio microstructure transmission interference microscopy non-destructive measurement device according to claim 4, characterized in that: the confocal of the first infrared detector (17) and the first relay lens group (11) The surface is conjugated with the sample to be measured (9).
  6. 根据权利要求5所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述第二显微物镜(10)的光瞳经过第一中继镜组(11)、变形镜(13)、光瞳镜(18)和单色滤光片(19)成像在第二红外探测器(20)上,第二显微物镜(10)的光瞳、变形镜(13)和第二红外探测器(20)共轭,单色滤光片(19)的中心波长与近红外短相干光源(1)的中心波长相同;利用压电陶瓷PZT(29)驱动第五平面反射镜(28)并使用第二红外探测器(20)采集4幅移相干涉图,计算获得光瞳像差;根据得到的光瞳像差,主动调整变形镜(13)进行像差补偿,使得大数值孔径光束汇聚到待测样品(9)沟槽底部并穿透待测样品(9),相比于反射式结构测试光路两次经过光瞳面,采用透射式结构测试光穿透样品后只经过第二显微物镜(10)一次,光瞳像差减少一半,这表明透射式结构能够解决更大深宽比结构带来的像差。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 5, characterized in that: the pupil of the second microscopic objective lens (10) passes through the first relay lens group (11) , the deformable mirror (13), the pupil mirror (18) and the monochromatic filter (19) are imaged on the second infrared detector (20), the pupil of the second microscope objective (10), the deformable mirror (13) ) is conjugated with the second infrared detector (20), and the central wavelength of the monochromatic filter (19) is the same as the central wavelength of the near-infrared short-coherence light source (1); the piezoelectric ceramic PZT (29) is used to drive the fifth plane The reflector (28) uses the second infrared detector (20) to collect 4 phase-shifted interference patterns, and calculates the pupil aberration; according to the obtained pupil aberration, the deformable mirror (13) is actively adjusted to compensate for the aberration. The large numerical aperture beam is converged to the bottom of the groove of the sample to be tested (9) and penetrates the sample to be tested (9). Compared with the reflective structure test light path passing through the pupil surface twice, the transmission structure is used to test the light penetration of the sample. After passing through the second microscope objective lens (10) only once, the pupil aberration is reduced by half, which shows that the transmissive structure can solve the aberration caused by the larger aspect ratio structure.
  7. 根据权利要求1所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:所述测试光穿透待测样品(9)硅基底会额外产生透射波像差,在参考光路中使用补偿板(25)进行抵消。A high aspect ratio microstructure transmission interference microscopy non-destructive measurement device according to claim 1, characterized in that when the test light penetrates the silicon substrate of the sample (9) to be tested, additional transmission wave aberration will be generated. A compensation plate (25) is used in the reference optical path for cancellation.
  8. 根据权利要求1所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:变形镜(13)的入射光和出射光垂直,出射光正面照射第二平面反射镜(12),并经第二平面反射镜(12)反射,反射出的光束方向转为与变形镜(13)的入射光一致。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 1, characterized in that: the incident light and the outgoing light of the deformable mirror (13) are perpendicular, and the outgoing light irradiates the second plane reflector (13) frontally. 12), and is reflected by the second plane reflecting mirror (12), and the direction of the reflected light beam is changed to be consistent with the incident light of the deformable mirror (13).
  9. 根据权利要求1所述的一种高深宽比微结构透射式干涉显微无损测量装置,其特征在于:第四平面反射镜(22)的出射光和入射光垂直,第四平面反射镜(22)的出射光正面照射第三平面反射镜(21)后,经第三平面反射镜(21)反射,反射的光束方向转为与第四平面反射镜(22)的入射光一致。A high aspect ratio microstructure transmission type interference microscopy non-destructive measurement device according to claim 1, characterized in that: the outgoing light of the fourth plane reflector (22) is perpendicular to the incident light, and the fourth plane reflector (22) ), the emitted light irradiates the third plane reflector (21) frontally, and is reflected by the third plane reflector (21). The direction of the reflected light beam is changed to be consistent with the incident light of the fourth plane reflector (22).
  10. 一种高深宽比微结构透射式干涉显微无损测量方法,其特征在于:步骤如下:A transmission interference microscopy non-destructive measurement method for high aspect ratio microstructures, which is characterized by: the steps are as follows:
    步骤1、将待测样品(9)放在第一显微物镜(8)和第二显微物镜(10)的共焦面上,并在第一红外探测器(17)上得到带有像差的图像和低对比度的干涉条纹图;Step 1. Place the sample to be measured (9) on the confocal plane of the first microscopic objective lens (8) and the second microscopic objective lens (10), and obtain an image with an image on the first infrared detector (17). Poor images and low-contrast interference fringe patterns;
    步骤2、使用第二红外探测器(20)监测第二显微物镜(10)的光瞳像差,利用压电陶瓷PZT(29)驱动第五平面反射镜(28)移动,并使用第二红外探测器(20)采集4幅移相干涉图,计算获得光瞳像差;Step 2: Use the second infrared detector (20) to monitor the pupil aberration of the second microscope objective lens (10), use the piezoelectric ceramic PZT (29) to drive the fifth plane mirror (28) to move, and use the second The infrared detector (20) collects four phase-shifted interference patterns and calculates the pupil aberration;
    步骤3、变形镜(13)根据监测到的光瞳像差调整形状,在第二红外探测器(20)上观察补偿结果,补偿后在第一红外探测器(17)上观察到清晰的图像和高对比度的干涉条纹图;Step 3. Adjust the shape of the deformable mirror (13) according to the monitored pupil aberration, observe the compensation result on the second infrared detector (20), and observe a clear image on the first infrared detector (17) after compensation and high-contrast interference fringe patterns;
    步骤4、采用垂直扫描干涉法通过压电陶瓷PZT(29)驱动第五平面反射镜(28),第一红外探测器(17)同步采集干涉条纹图,并采用垂直扫描干涉算法处理干涉图;Step 4. Use the vertical scanning interference method to drive the fifth plane reflector (28) through the piezoelectric ceramic PZT (29). The first infrared detector (17) synchronously collects the interference fringe pattern, and uses the vertical scanning interference algorithm to process the interference pattern;
    步骤5、得到待测样品(9)沟槽结构的深度和宽度。Step 5: Obtain the depth and width of the groove structure of the sample (9) to be tested.
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