CN112097645B - High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device - Google Patents
High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device Download PDFInfo
- Publication number
- CN112097645B CN112097645B CN202010896309.9A CN202010896309A CN112097645B CN 112097645 B CN112097645 B CN 112097645B CN 202010896309 A CN202010896309 A CN 202010896309A CN 112097645 B CN112097645 B CN 112097645B
- Authority
- CN
- China
- Prior art keywords
- light
- sample
- infrared detector
- pupil
- interference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/22—Measuring arrangements characterised by the use of optical techniques for measuring depth
Abstract
The invention discloses a reflective interference microscopic nondestructive measurement device for a high-aspect-ratio microstructure, which solves the problem that the depth and the width of a high-aspect-ratio groove structure in a silicon-based MEMS device cannot be measured nondestructively in the prior art. The device fully utilizes the advantage that near infrared light can penetrate through the silicon substrate, and can use a large-numerical-aperture convergent light beam for measurement; aiming at the problem that the large-numerical-aperture light beam converged by a microobjective is modulated by a groove structure of a sample to be detected to reduce the focusing property of the light beam, an exit pupil aberration monitoring light path and an aberration active compensation system of the microobjective are arranged, so that the large-numerical-aperture light beam can be converged to the bottom of a groove; and obtaining the depth and width measurement results of the groove structure of the sample to be measured by using a vertical scanning interference method. The invention overcomes the difficulty that the prior measurement technology can not realize the nondestructive measurement of the high depth-width ratio groove structure of the silicon-based MEMS device, and can carry out the high-precision nondestructive measurement on the depth and the width of the deep groove structure of the sample to be measured.
Description
Technical Field
The invention relates to the technical field of precise optical measurement engineering, in particular to a reflective interference microscopic nondestructive measurement device for a microstructure with a high aspect ratio, which is used for measuring the depth and the width of a groove structure of a silicon-based MEMS (micro-electromechanical system) device and is particularly suitable for a deep groove structure with the high aspect ratio.
Background
With the development of micro-electromechanical system MEMS, the requirement for measuring the microstructure is higher and higher, and in the MEMS processing technology based on silicon, the aspect ratio is one of the main indexes and directly influences the performance of MEMS devices; the width of a groove of the existing MEMS high-aspect-ratio microstructure is 3-10 mu m, the depth of the groove is 10-300 mu m, and the aspect ratio is generally 10-100: 1, the development of the high-aspect-ratio microstructure plays a key role in driving the application of the MEMS technology in many fields such as aviation, aerospace, electronics, biology, medical treatment and the like, and meanwhile, corresponding measuring technologies and devices in the process are still emerging.
The existing geometric measurement methods for the microstructure device with the high aspect ratio at home and abroad are roughly two types: contact measurement and non-contact measurement; for contact measurement, the most common instruments include scanning electron microscope SEM and atomic force microscope, which need to cut the device from the side to measure the trench bottom, and this method of destroying the device structure is not suitable for on-line detection, and has limited help to improve the device performance; the non-contact measurement mainly refers to an interference measurement technology, which is based on the principle of light wave interference, and compared with other measurement technologies, the interference measurement can realize nondestructive measurement.
In recent years, a contour testing method utilizing the light wave interference principle is developed, and a non-contact type morphology measuring device represented by a white light interferometer is used, so that the device can be used for measuring the three-dimensional morphology of a device without contacting a sample to be measured and damaging the structure of the device. The resolution of the white light is limited by the numerical aperture NA of the microscope objective, so that the resolution must be improved by using the large NA objective, but the white light is blocked by the high aspect ratio trench of the sample to be measured, so that the large NA probe light cannot reach the bottom of the trench, and cannot meet the imaging requirement, as shown in fig. 2 (a), for example, one trench has a width of 3 μm, a depth of 60 μm, and an aspect ratio of 20: 1, and the bottom of the trench can be irradiated only when the NA is less than or equal to 0.025, and assuming that the wavelength is 550 nm, the imaging resolution exceeds 14.4 μm, and cannot meet the imaging requirement for the bottom with a width of 3 μm. Although some proposals have been made to rotate the sample to be measured in an inclined manner so that the light beam irradiates the bottom of the deep groove, the process of rotating the sample to be measured in an inclined manner is very complicated, and the whole bottom cannot be imaged at one time, so that the silicon-based MEMS high-aspect-ratio structure cannot be directly measured by using a white light interferometer.
The near infrared light can penetrate through the silicon material to detect the bottom of the groove, as shown in fig. 2 (b), but for the high aspect ratio structure, the large numerical aperture light beam converged by the microscope objective lens is modulated by the groove structure to reduce the focusing property of the light beam, generate aberration, seriously affect the imaging quality and interference fringes, and therefore, the measurement result generates huge error.
Chinese patent 'A measuring method and device of micro-nano deep groove structure' (CN 200710053292.5), the method is that infrared beam is projected on the surface of silicon chip containing deep groove structure, and interference light formed by reflection from each interface of deep groove structure is analyzed to obtain measuring reflection spectrum; and (3) constructing a theoretical reflection spectrum of the equivalent multilayer thin film stack optical model of the deep groove structure by adopting an equivalent medium theory, fitting the measured reflection spectrum by utilizing a simulated annealing algorithm and a gradient-based optimization algorithm through the theoretical reflection spectrum, and further extracting the set characteristic parameters such as the depth and the width of the groove. The method disclosed by the patent needs to model the groove structure of a sample to be measured in advance and calculate to obtain a theoretical reflection spectrum, and fits the spectrum obtained by measurement to obtain the measurement result of the depth and the width of the groove, and the accuracy of the measurement result is influenced by the theoretical model established in advance, so that the modeling difficulty of the sample to be measured with a complex structure or an unknown structure is large, and the accuracy of the measurement result is difficult to ensure.
Disclosure of Invention
The invention aims to provide a reflective interference microscopic nondestructive measurement device for a high-aspect-ratio microstructure, which is used for solving the problem that the depth and the width of a MEMS high-aspect-ratio groove structure cannot be measured by the conventional interference microscopic nondestructive measurement method.
The technical solution for realizing the purpose of the invention is as follows: a high aspect ratio micro-structure reflection type interference micro-nondestructive measurement device is characterized in that: the device comprises a near-infrared short coherent light source, a Kohler illumination system, a first cubic beam splitter prism, a first light path deflection system, a deformable mirror, a first relay lens group, a first microscope objective, a sample to be detected, a piezoelectric ceramic PZT, a second cubic beam splitter prism, a tube mirror, a first infrared detector, a pupil mirror, a monochromatic filter, a second infrared detector, a second light path deflection system, a second plane reflector, a second relay lens group, a second microscope objective and a third plane reflector.
The Kohler lighting system comprises a first condenser, a second condenser, a first plane reflector and a third condenser which are arranged in sequence on a common light path.
The piezoelectric ceramic PZT and the first infrared detector are connected to form a synchronous scanning acquisition system; the deformable mirror and the second infrared detector are matched to form an aberration monitoring optical path and an active compensation system.
Light beams emitted by the near-infrared short coherent light source are divided into test light and reference light through the first cubic beam splitter prism after being subjected to multi-field uniform illumination light generated by the Kohler illumination system; the test light reaches the deformable mirror through the turning of the first light path turning system, is reflected by the deformable mirror, sequentially passes through the first light path turning system, the first relay lens group and the first microscope objective lens, and irradiates a sample to be tested placed on the piezoelectric ceramic PZT; the reference light is turned by the second light path turning system to reach the second plane reflector, reflected by the second plane reflector, sequentially passes through the second light path turning system, the second relay lens group and the second microscope objective lens, irradiates the third plane reflector and returns in the original path; after the sample to be detected is illuminated, the reflected light returns to the first cubic beam splitter prism in the original path, passes through the second cubic beam splitter prism, and a part of light passes through the tube mirror to image the sample to be detected on the first infrared detector and interferes with the returned reference light on the first infrared detector; the other part of light passes through a pupil mirror and a monochromatic filter to image the pupil of the microscope objective on a second infrared detector, and generates interference with reference light on the second infrared detector to form a microscope objective exit pupil aberration monitoring light path, a piezoelectric ceramic PZT is used for driving a sample to be detected, 4 phase-shifting interferograms are collected by using the second infrared detector, and pupil aberration is obtained through calculation; feeding back pupil aberration of the microscope objective to the deformable mirror, and adjusting the shape of the deformable mirror to compensate the pupil aberration; and driving the sample to be measured through the piezoelectric ceramic PZT by adopting a vertical scanning interference method, synchronously receiving interference fringe patterns of different depth surfaces of the sample to be measured on the first infrared detector, and finally processing the interference patterns by adopting a vertical scanning interference algorithm to obtain the depth and width measurement results of the groove of the sample to be measured.
A high aspect ratio micro-structure reflection type interference microscopic nondestructive measurement method comprises the following steps:
step 1, placing a sample to be detected on piezoelectric ceramic PZT, and obtaining an image with aberration and an interference fringe image with low contrast on a first infrared detector;
step 3, adjusting the shape of the deformable mirror according to the monitored pupil aberration, observing a compensation result on the second infrared detector, and observing a clear image and a high-contrast interference fringe image on the first infrared detector after compensation;
step 4, driving a sample to be detected through piezoelectric ceramic PZT by adopting a vertical scanning interference method, synchronously acquiring an interference fringe pattern by using a first infrared detector, and processing the interference pattern by adopting a vertical scanning interference algorithm;
and 5, finally obtaining the depth and width measurement results of the groove structure of the sample to be measured.
Compared with the prior art, the invention has the remarkable advantages that:
(1) a sample to be detected of the silicon-based MEMS groove structure with the high depth-to-width ratio adopts a near-infrared short coherent light source, penetrates through a deep groove to reach the bottom, a large-NA micro objective lens can be used, and the problem that the bottom of the groove structure with the high depth-to-width ratio cannot be detected by a large-NA light beam is solved.
(2) Aiming at the problem that the large NA light beam converged by the microscope objective is modulated by a groove structure of a sample to be measured to reduce the focusing performance of the light beam, an exit pupil aberration monitoring light path and an aberration active compensation system of the microscope objective are constructed, so that the aberration generated by the deep groove structure of the sample to be measured can be monitored and fed back to the deformable mirror to actively compensate the aberration, the imaging quality and the contrast of interference fringes are improved, and the measurement precision is ensured.
Drawings
FIG. 1 is a schematic diagram of a high aspect ratio microstructure reflection type interference microscopy nondestructive measurement device.
FIG. 2 is a schematic view of a bottom of a trench for detecting a sample to be detected by a converged light beam, wherein a view (a) is a view of a sidewall occlusion by white light detection; FIG. b is a diagram of bottom detection using near infrared light penetrating the sidewall, but with a deteriorated beam focusing; and (c) is a diagram of the light beam which can be converged to the bottom of the groove after compensation by using the deformable mirror.
FIG. 3 is a schematic diagram of pupil aberration monitoring and active compensation.
FIG. 4 is an interferogram collected by an infrared detector, wherein (a) is the interferogram before compensation by the deformable mirror; and (b) is an interference pattern after compensation by the deformable mirror.
Fig. 5 is a graph of measurement results of a high aspect ratio trench structure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
With reference to fig. 1, a high aspect ratio microstructure reflective interference microscopy nondestructive measurement apparatus includes a near-infrared short coherent light source 1, a kohler illumination system, a first cubic beam splitter prism 6, a first light path folding system 7, a deformable mirror 8, a first relay lens group 9, a first microscope objective lens 10, a sample to be measured 11, a piezoelectric ceramic PZT12, a second cubic beam splitter prism 13, a tube mirror 14, a first infrared detector 15, a pupil mirror 16, a monochromatic filter 17, a second infrared detector 18, a second light path folding system 19, a second plane mirror 20, a second relay lens group 21, a second microscope objective lens 22, and a third plane mirror 23.
The Kohler lighting system comprises a first condenser lens 2, a second condenser lens 3, a first plane reflector 4 and a third condenser lens 5 which are arranged in sequence on a common light path.
The piezoelectric ceramic PZT12 and the first infrared detector 15 are connected to form a synchronous scanning acquisition system; the deformable mirror 8 and the second infrared detector 18 are matched to form an aberration monitoring optical path and an active compensation system.
After light beams emitted by the near-infrared short coherent light source 1 generate multi-field uniform illumination light through a Kohler illumination system, the multi-field uniform illumination light is divided into test light and reference light through a first cubic beam splitter prism 6; the test light is deflected by the first light path deflection system 7 to reach the deformable mirror 8, reflected by the deformable mirror 8, sequentially passes through the first light path deflection system 7, the first relay lens group 9 and the first microscope objective lens 10, and irradiates a sample 11 to be tested, which is placed on the piezoelectric ceramic PZT 12; the reference light is deflected by the second light path deflection system 19 to reach the second plane reflector 20, reflected by the second plane reflector 20, sequentially passes through the second light path deflection system 19, the second relay lens group 21 and the second microscope objective lens 22, irradiates the third plane reflector 23, and returns in the original path; after the sample 11 to be detected is illuminated, the reflected light returns to the first cubic beam splitter prism 6 in the original path, passes through the second cubic beam splitter prism 13, and a part of light passes through the tube lens 14 to image the sample 11 to be detected on the first infrared detector 15 and interferes with the returned reference light on the first infrared detector 15; the other part of light passes through a pupil mirror 16 and a monochromatic filter 17 to image the pupil of the microobjective on a second infrared detector 18, and generates interference with reference light on the second infrared detector 18 to form a microobjective exit pupil aberration monitoring light path, a piezoelectric ceramic PZT12 is used for driving a sample 11 to be detected, 4 phase-shifting interferograms are collected by using the second infrared detector 18, and pupil aberration is obtained through calculation; feeding back the pupil aberration of the microscope objective to the deformable mirror 8, and then adjusting the shape of the deformable mirror 8 to compensate the pupil aberration; the method comprises the steps of driving a sample 11 to be measured through piezoelectric ceramic PZT12 by a vertical scanning interference method, synchronously receiving interference fringe patterns of surfaces of the sample 11 to be measured at different depths on a first infrared detector 15, and finally processing the interference patterns by a vertical scanning interference algorithm to obtain depth and width measurement results of a groove of the sample to be measured.
The near-infrared short coherent light source 1 is positioned on the front focal plane of the first condenser 2, and the first condenser 2, the second condenser 3 and the third condenser 5 are confocal in sequence.
The deformable mirror 8 is positioned on the back focal plane of the third condenser 5 and is conjugated with the pupil of the first microscope objective lens 10 about the first relay lens group 9, the first relay lens group 9 comprises two identical and confocal condenser lenses, a diaphragm is arranged at the focal position to block stray light, and the surface to be measured of the sample 11 to be measured is positioned on the focal plane of the first microscope objective lens 10;
the first infrared detector 15, the confocal plane of the first relay lens group 9 and the sample 11 to be detected are conjugated.
The pupil of the first microscope objective 10 is imaged on a second infrared detector 18 through a first relay lens group 9, an anamorphic lens 8, a pupil lens 16 and a monochromatic filter 17, the pupil of the first microscope objective 10, the anamorphic lens 8 and the second infrared detector 18 are conjugated, and the central wavelength of the monochromatic filter 17 is the same as that of the near-infrared short coherent light source 1; driving a sample 11 to be detected by utilizing piezoelectric ceramic PZT12, collecting 4 phase-shifting interferograms by utilizing a second infrared detector 18, and calculating to obtain pupil aberration; and according to the obtained pupil aberration, actively adjusting the deformable mirror 8 to perform aberration compensation, so that the large-numerical-aperture light beam can still be converged to the bottom of the groove after being modulated by the groove structure of the sample to be detected.
The light path deflection system comprises three plane reflectors and a cubic beam splitter prism.
Further, the direction of the light beam after passing through the first light path turning system 7 is perpendicular to the original direction, the front side irradiates the deformable mirror 8 and is reflected, the light beam is reflected by the cubic beam splitter prism in the first light path turning system 7, and the direction of the light beam is turned to be consistent with the original direction.
Further, the direction of the light beam after passing through the second light path turning system 19 is perpendicular to the original direction, the front side of the light beam irradiates the second plane mirror 20 and is reflected, and the light beam is reflected by the cubic beam splitter prism in the second light path turning system 19, and the direction of the light beam is turned to be consistent with the original direction.
Referring to fig. 2, the white light is shielded by the groove structure of the sample 11 to be measured as shown in fig. 2 (a), the near infrared light penetrates through the sample 11 to be measured but is modulated by the groove structure to reduce the focusing performance as shown in fig. 2 (b), and the near infrared large numerical aperture light beam can be converged to the bottom of the groove after the aberration is compensated by the deformable mirror 8 as shown in fig. 2 (c).
With reference to fig. 3, 4 and 5, a reflective interference microscopy nondestructive measurement method for a high aspect ratio microstructure includes the following steps:
step 1, placing a sample 11 to be detected on piezoelectric ceramic PZT12, and obtaining an image with aberration and an interference fringe image with low contrast on a first infrared detector 15, as shown in fig. 4 (a);
step 3, the deformable mirror 8 adjusts the shape according to the monitored pupil aberration, a compensation result is observed on the second infrared detector 18, and a clear image and a high-contrast interference fringe image are observed on the first infrared detector 15 after compensation, as shown in fig. 4 (b);
step 4, driving the sample 11 to be detected through the piezoelectric ceramic PZT12 by adopting a vertical scanning interference method, synchronously acquiring an interference fringe pattern by the first infrared detector 15, and processing the interference pattern by adopting a vertical scanning interference algorithm;
and 5, finally obtaining the depth and width measurement results of the groove structure of the sample 11 to be measured, as shown in fig. 5.
Claims (10)
1. A high aspect ratio micro-structure reflection type interference micro-nondestructive measurement device is characterized in that: the device comprises a near-infrared short coherent light source (1), a Kohler illumination system, a first cubic beam splitter prism (6), a first light path deflection system (7), a deformable mirror (8), a first relay lens group (9), a first microscope objective (10), a sample to be detected (11), a piezoelectric ceramic PZT (12), a second cubic beam splitter prism (13), a tube mirror (14), a first infrared detector (15), a pupil mirror (16), a monochromatic light filter (17), a second infrared detector (18), a second light path deflection system (19), a second plane mirror (20), a second relay lens group (21), a second microscope objective (22) and a third plane mirror (23);
the Kohler illumination system comprises a first condenser (2), a second condenser (3), a first plane reflector (4) and a third condenser (5) which are arranged in sequence on a common light path;
the piezoelectric ceramic PZT (12) and the first infrared detector (15) are connected to form a synchronous scanning acquisition system; the deformable mirror (8) and the second infrared detector (18) are matched to form an aberration monitoring optical path and an active compensation system;
light beams emitted by the near-infrared short coherent light source (1) are divided into test light and reference light through a first cubic beam splitter prism (6) after being subjected to multi-field uniform illumination light generated by a Kohler illumination system; the test light is deflected by the first light path deflection system (7) to reach the deformable mirror (8), reflected by the deformable mirror (8), sequentially passes through the first light path deflection system (7), the first relay lens group (9) and the first microscope objective lens (10), and irradiates a sample (11) to be tested, which is placed on the piezoelectric ceramic PZT (12); the reference light is turned by the second light path turning system (19) to reach the second plane reflector (20), is reflected by the second plane reflector (20), sequentially passes through the second light path turning system (19), the second relay lens group (21) and the second microscope objective lens (22), irradiates the third plane reflector (23), and returns in the original path; after a sample (11) to be detected is illuminated, the reflected light returns to the first cubic beam splitter prism (6) in a primary path, passes through the second cubic beam splitter prism (13), and a part of light passes through the tube mirror (14) to image the sample (11) to be detected on the first infrared detector (15) and interferes with the returned reference light on the first infrared detector (15); the other part of light passes through a pupil mirror (16) and a monochromatic filter (17) to image the pupil of the microobjective on a second infrared detector (18), and generates interference with reference light on the second infrared detector (18) to form a microobjective exit pupil aberration monitoring light path, a piezoelectric ceramic PZT (12) is used for driving a sample (11) to be detected, 4 phase-shift interferograms are collected by the second infrared detector (18), and pupil aberration is obtained through calculation; the pupil aberration of the microscope objective lens is fed back to the deformable mirror (8), and the shape of the deformable mirror (8) is adjusted to compensate the pupil aberration; the method comprises the steps of driving a sample (11) to be measured through piezoelectric ceramic PZT (12) by using a vertical scanning interference method, synchronously receiving interference fringe patterns of surfaces of the sample (11) to be measured at different depths on a first infrared detector (15), and finally processing the interference patterns by using a vertical scanning interference algorithm to obtain depth and width measurement results of a groove of the sample to be measured.
2. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 1, wherein: the near-infrared short coherent light source (1) is positioned on the front focal surface of the first condenser (2), and the first condenser (2), the second condenser (3) and the third condenser (5) are sequentially confocal.
3. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 1, wherein: the deformable mirror (8) is located on the rear focal plane of the third microscope (5) and is conjugated with the pupil of the first microscope (10) about the first relay lens group (9), the first relay lens group (9) comprises two identical and confocal condenser lenses, the diaphragm is placed at the focal position to block stray light, and the surface to be measured of the sample to be measured (11) is located on the focal plane of the first microscope (10).
4. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 1, wherein: the first infrared detector (15), the confocal plane of the first relay lens group (9) and the sample (11) to be detected are conjugated.
5. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 1, wherein: the pupil of the first microscope objective (10) is imaged on a second infrared detector (18) through a first relay lens group (9), a deformable lens (8), a pupil lens (16) and a monochromatic filter (17), the pupil of the first microscope objective (10), the deformable lens (8) and the second infrared detector (18) are conjugated, and the central wavelength of the monochromatic filter (17) is the same as that of the near-infrared short coherent light source (1); driving a sample (11) to be detected by using a piezoelectric ceramic PZT (12), collecting 4 phase-shifting interferograms by using a second infrared detector (18), and calculating to obtain pupil aberration; and according to the obtained pupil aberration, actively adjusting the deformable mirror (8) to perform aberration compensation, so that the large-numerical-aperture light beam can still be converged to the bottom of the groove after being modulated by the groove structure of the sample (11) to be detected.
6. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 1, wherein: the light path deflection system comprises three plane reflectors and a cubic beam splitter prism.
7. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 6, wherein: the direction of the light beam is vertical to the original direction after passing through the first light path turning system (7), the front side irradiates the deformable mirror (8) and is reflected, the light beam is reflected by the cubic beam splitter prism in the first light path turning system (7), and the direction of the light beam is turned to be consistent with the original direction.
8. The high aspect ratio microstructure reflective interferometric microscopy nondestructive measurement device of claim 6, wherein: the direction of the light beam is vertical to the original direction after passing through the second light path deflection system (19), the front side irradiates the second plane reflector (20) and is reflected, the light beam is reflected by the cubic beam splitter prism in the second light path deflection system (19), and the direction of the light beam is deflected to be consistent with the original direction.
9. A measuring method based on the reflective interference microscopy nondestructive measuring device of the high aspect ratio microstructure according to any one of claims 1 to 8 is characterized by comprising the following steps:
step 1, a sample (11) to be detected is placed on a piezoelectric ceramic PZT (12), and an image with aberration and an interference fringe pattern with low contrast are obtained on a first infrared detector (15);
step 2, monitoring pupil aberration of the microscope objective by using a second infrared detector (18), driving a sample to be detected (11) by using a piezoelectric ceramic PZT (12), collecting 4 phase-shifting interferograms by using the second infrared detector (18), and calculating to obtain the pupil aberration;
step 3, adjusting the shape by the deformable mirror (8) according to the monitored pupil aberration, observing a compensation result on the second infrared detector (18), and observing a clear image and a high-contrast interference fringe image on the first infrared detector (15) after compensation;
step 4, driving a sample to be detected (11) through a piezoelectric ceramic PZT (12) by adopting a vertical scanning interference method, synchronously acquiring an interference fringe pattern by using a first infrared detector (15), and processing the interference pattern by adopting a vertical scanning interference algorithm;
and 5, finally obtaining the depth and width measurement results of the groove structure of the sample (11) to be measured.
10. The method of claim 9, wherein the step of measuring comprises: the sample (11) to be tested is a silicon-based MEMS device with a high depth-width ratio groove structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010896309.9A CN112097645B (en) | 2020-08-31 | 2020-08-31 | High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010896309.9A CN112097645B (en) | 2020-08-31 | 2020-08-31 | High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112097645A CN112097645A (en) | 2020-12-18 |
| CN112097645B true CN112097645B (en) | 2021-12-10 |
Family
ID=73756814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010896309.9A Active CN112097645B (en) | 2020-08-31 | 2020-08-31 | High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112097645B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113465534B (en) * | 2021-06-25 | 2022-04-19 | 浙江大学 | Micro-nano deep groove structure rapid measurement method based on white light interference |
| CN113607084B (en) * | 2021-08-11 | 2022-05-17 | 浙江大学 | Method for measuring submillimeter groove structure based on white light interference and SPGD |
| CN113847883B (en) * | 2021-09-09 | 2022-10-14 | 南京理工大学 | Interferometric method suitable for detecting three-dimensional shape of high aspect ratio structure |
| CN114234863B (en) * | 2022-02-23 | 2022-11-15 | 三代光学科技（天津）有限公司 | High-precision measuring light path structure for surface roughness of inner cavity and outer cavity and automatic measuring system |
| CN115235345A (en) * | 2022-06-30 | 2022-10-25 | 南京理工大学 | Transmission type interference microscopic nondestructive measurement device and measurement method for microstructure with high depth-to-width ratio |
| CN115479544B (en) * | 2022-09-22 | 2023-11-10 | 南京理工大学 | Micro-structure line width microscopic nondestructive measurement method based on translation difference |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09218018A (en) * | 1996-02-08 | 1997-08-19 | Nikon Corp | Depth measuring method and apparatus |
| US5943117A (en) * | 1996-11-22 | 1999-08-24 | Jozef F. Van de Velde | Scanning laser ophthalmoscope for retinal microphotocoagulation and measurement of wavefront aberrations |
| CN201138196Y (en) * | 2007-09-29 | 2008-10-22 | 华中科技大学 | Measuring apparatus of micro-nano deep groove structure |
| CN101393015A (en) * | 2008-10-17 | 2009-03-25 | 华中科技大学 | On-line measurement method and device for micro/nano deep trench structure |
| CN102082108A (en) * | 2010-10-26 | 2011-06-01 | 华中科技大学 | Method and device for rapidly measuring sidewall appearance of micro-nano deep groove structure |
| CN104181780A (en) * | 2014-09-16 | 2014-12-03 | 中国科学院光电技术研究所 | Aberration compensation device and aberration compensation method of optical system |
| JP6415220B2 (en) * | 2014-09-29 | 2018-10-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| CN109659220A (en) * | 2017-10-11 | 2019-04-19 | 中国科学院半导体研究所 | Laser assisted is without exposure mask high-aspect-ratio silicon carbide deep trouth pore structure preparation method |
| CN109781633A (en) * | 2019-03-13 | 2019-05-21 | 山东大学 | A kind of the white light Microscopic Interferometric Measuring System and method of available spectral information |
| CN110214261A (en) * | 2017-01-25 | 2019-09-06 | Asml荷兰有限公司 | Method and apparatus for measuring the structure on substrate |
| CN111240010A (en) * | 2020-01-08 | 2020-06-05 | 北京理工大学 | Deformable mirror surface shape design method and device for free-form surface measurement |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2006556A (en) * | 2010-05-13 | 2011-11-15 | Asml Holding Nv | Optical system, inspection system and manufacturing method. |
-
2020
- 2020-08-31 CN CN202010896309.9A patent/CN112097645B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09218018A (en) * | 1996-02-08 | 1997-08-19 | Nikon Corp | Depth measuring method and apparatus |
| US5943117A (en) * | 1996-11-22 | 1999-08-24 | Jozef F. Van de Velde | Scanning laser ophthalmoscope for retinal microphotocoagulation and measurement of wavefront aberrations |
| CN201138196Y (en) * | 2007-09-29 | 2008-10-22 | 华中科技大学 | Measuring apparatus of micro-nano deep groove structure |
| CN101393015A (en) * | 2008-10-17 | 2009-03-25 | 华中科技大学 | On-line measurement method and device for micro/nano deep trench structure |
| CN102082108A (en) * | 2010-10-26 | 2011-06-01 | 华中科技大学 | Method and device for rapidly measuring sidewall appearance of micro-nano deep groove structure |
| CN104181780A (en) * | 2014-09-16 | 2014-12-03 | 中国科学院光电技术研究所 | Aberration compensation device and aberration compensation method of optical system |
| JP6415220B2 (en) * | 2014-09-29 | 2018-10-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| CN110214261A (en) * | 2017-01-25 | 2019-09-06 | Asml荷兰有限公司 | Method and apparatus for measuring the structure on substrate |
| CN109659220A (en) * | 2017-10-11 | 2019-04-19 | 中国科学院半导体研究所 | Laser assisted is without exposure mask high-aspect-ratio silicon carbide deep trouth pore structure preparation method |
| CN109781633A (en) * | 2019-03-13 | 2019-05-21 | 山东大学 | A kind of the white light Microscopic Interferometric Measuring System and method of available spectral information |
| CN111240010A (en) * | 2020-01-08 | 2020-06-05 | 北京理工大学 | Deformable mirror surface shape design method and device for free-form surface measurement |
Non-Patent Citations (2)
| Title |
|---|
| 3D激光扫描共聚焦显微镜计量特性分析及测试;崔建军等;《红外与激光工程》;20180831;第47卷(第8期);全文 * |
| 三维微结构显微干涉检测方法;高志山等;《电光与控制》;20191130;第26卷(第11期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112097645A (en) | 2020-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112097645B (en) | High depth-width ratio micro-structure reflection type interference microscopic nondestructive measuring device | |
| US6721094B1 (en) | Long working distance interference microscope | |
| JP6460364B2 (en) | Off-axis reflection phase microscope system and method for off-axis phase microscope | |
| US20050105097A1 (en) | Systems and methods for phase measurements | |
| US20050057756A1 (en) | Systems and methods for phase measurements | |
| CN103115585B (en) | Based on fluorescence interference microscopic measuring method and the device of stimulated radiation | |
| US20110261347A1 (en) | Method for interferometric detection of surfaces | |
| US11635289B2 (en) | Surface shape measurement device and surface shape measurement method | |
| WO2015154313A1 (en) | High-speed multi-dimensional vibration and deformation detection device and method | |
| CN103115583B (en) | Based on the Mirau fluorescence interference micro-measurement apparatus of stimulated radiation | |
| JP4474535B2 (en) | 3D shape measurement and analysis equipment | |
| CN111220068A (en) | White light interference measuring device and method based on sample space structure illumination | |
| CN113295385B (en) | Weak coherent optical detection method and system for internal deformation of lens | |
| CN109520973A (en) | Postposition is divided pupil laser differential confocal microscopic detection method and device | |
| CN109341571A (en) | A kind of dual wavelength synchronizes the surface figure measuring device and method of interference | |
| CN115235345A (en) | Transmission type interference microscopic nondestructive measurement device and measurement method for microstructure with high depth-to-width ratio | |
| JP2022162306A (en) | Surface shape measurement device and surface shape measurement method | |
| Colomb et al. | Digital holographic microscopy | |
| CN112711030A (en) | Microscope area array sweep frequency measuring device and method | |
| Yin et al. | New advance in confocal microscopy | |
| CN116989698B (en) | Combined phase microscopic imaging measurement system | |
| Guo et al. | MEMS Characterization Based on Optical Measuring Methods | |
| CN117232430A (en) | System and method for measuring three-dimensional morphology of nano structure based on quantitative phase imaging | |
| Wolfling et al. | Innovative metrology method for the 3-dimensional measurement of MEMS structures | |
| Hall | Rapid thickness and profile measurement of bonded multi-layer structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |