WO2024000454A1 - 触控显示面板及其制备方法、显示装置 - Google Patents

触控显示面板及其制备方法、显示装置 Download PDF

Info

Publication number
WO2024000454A1
WO2024000454A1 PCT/CN2022/102950 CN2022102950W WO2024000454A1 WO 2024000454 A1 WO2024000454 A1 WO 2024000454A1 CN 2022102950 W CN2022102950 W CN 2022102950W WO 2024000454 A1 WO2024000454 A1 WO 2024000454A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
refractive index
quantum dot
light
display panel
Prior art date
Application number
PCT/CN2022/102950
Other languages
English (en)
French (fr)
Inventor
李在濠
高栋雨
禹光日
曾诚
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to CN202280002064.8A priority Critical patent/CN117642788A/zh
Priority to PCT/CN2022/102950 priority patent/WO2024000454A1/zh
Publication of WO2024000454A1 publication Critical patent/WO2024000454A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a touch display panel, a preparation method thereof, and a display device.
  • OLED Organic Light Emitting Diode
  • QLED Quantum Dots Light Emitting Diode Due to the quantum confinement effect of the quantum dot material itself, the continuous energy band changes into discrete energy levels, which can emit high light with a narrow peak width. Purity light has attracted much attention and research in recent years.
  • Quantum Dots (QD)-OLED devices with relatively mature technology at this stage use non-pixelated blue OLED devices as backlight sources, using blue light to excite red QDs and green QDs to emit red and green light respectively, but QD materials It has limited absorption of blue backlight, limiting the luminous efficiency of quantum dots, thus affecting the front light extraction efficiency of the display device and the color gamut of the display.
  • the touch display panel includes:
  • the first base substrate includes a plurality of sub-pixel areas
  • a plurality of light-emitting devices are located on one side of the first substrate, corresponding to the sub-pixel areas;
  • the first pixel definition layer is located on the side of the light-emitting device facing away from the first base substrate, and includes a first opening area corresponding to the sub-pixel area in a one-to-one manner;
  • a plurality of quantum dot layers located on a side of the light-emitting device facing away from the first substrate and located in at least part of the first opening area;
  • the touch module is located on the side of the quantum dot layer away from the light-emitting device and includes a first touch electrode layer;
  • At least one layer of stacked insulating structure is located between the quantum dot layer and the first touch electrode layer, used to transmit the light emitted from each quantum dot layer and reflect the light emitted from the light emitting device;
  • the stacked insulating structure includes: a first refractive index layer and a second refractive index layer provided throughout the layer; the refractive index of the first refractive index layer is less than the refractive index of the second refractive index layer; the second refractive index layer is located between the first refractive index layer and the quantum dot layer; the first refractive index layer
  • the index layer includes a plurality of first refractive index patterns, and the first refractive index patterns correspond to the quantum dot layer one-to-one; the orthographic projection of the first refractive index pattern on the first base substrate at least covers the quantum dot layer on the first base substrate. Orthographic projection.
  • the touch module further includes: a first buffer layer located between the quantum dot layer and the first touch electrode layer, and a second touch layer located between the first touch electrode layer and the first buffer layer. a control electrode layer, and a first insulating layer located between the first touch electrode layer and the second touch electrode layer;
  • the second refractive index layer is located between the first buffer layer and the second touch electrode layer;
  • the first insulating layer includes a second opening area corresponding to the quantum dot layer, and the first refractive index pattern is located in the second opening area.
  • the thickness of the first refractive index pattern is equal to the thickness of the first insulating layer in a direction perpendicular to the first base substrate.
  • the material of the first refractive index pattern includes silicon oxide.
  • the refractive index of the first refractive index pattern is greater than or equal to 1.45 and less than or equal to 1.55.
  • the material of the first refractive index pattern includes one of the following or a combination thereof: acrylic resin, polyurethane resin, silicone resin, and epoxy resin.
  • the refractive index of the first refractive index pattern is greater than or equal to 1.30 and less than or equal to 1.50.
  • the material of the second refractive index layer includes silicon oxynitride.
  • the refractive index of the second refractive index layer is greater than or equal to 1.65 and less than or equal to 1.75.
  • the stacked insulation structure further includes:
  • the third refractive index layer is located between the first refractive index layer and the second refractive index layer; the refractive index of the third refractive index layer is smaller than the refractive index of the second refractive index layer, and the refractive index of the third refractive index layer is the same as the refractive index of the third refractive index layer.
  • the refractive index of a refractive index layer is different.
  • the third refractive index layer includes an organic matrix.
  • the material of the organic matrix includes one of the following or a combination thereof: silane resin, epoxy resin.
  • the refractive index of the third refractive index pattern is greater than or equal to 1.45 and less than or equal to 1.60.
  • the refractive index of the third refractive index layer is less than the refractive index of the first refractive index layer.
  • the refractive index of the third refractive index layer is greater than or equal to 1.25 and less than or equal to 1.45.
  • the third refractive index layer further includes hollow particles dispersed in an organic matrix.
  • the quantum dot layer is located within a portion of the first opening area
  • the touch display panel also includes: a plurality of first filling layers located in the first opening area outside the quantum dot layer;
  • the orthographic projection of the first refractive index layer on the first base substrate and the orthographic projection of the first filling layer on the first base substrate do not overlap with each other.
  • the touch display panel further includes: a first light-transmitting structure, located between the first filling layer and the touch electrode layer, for transmitting light emitted by the light-emitting device;
  • the first light-transmitting structure includes: a fourth refractive index layer, a fifth refractive index layer located between the fourth refractive index layer and the first filling layer; the refractive index of the fourth refractive index layer and the refractive index of the fifth refractive index layer Different; the fifth refractive index layer includes a second refractive index pattern that corresponds one-to-one with the first filling layer, and the orthogonal projection of the second refractive index pattern on the first substrate at least covers the orthogonal projection of the first filling layer on the first substrate. projection, and the orthographic projection of the second refractive index pattern on the first substrate does not overlap with the orthographic projection of the quantum dot layer on the first substrate.
  • the touch module includes a first buffer layer, and the first buffer layer is multiplexed as a fourth refractive index layer.
  • the orthographic projection of the second refractive index layer on the first base substrate covers the orthographic projection of the first filling layer on the first base substrate.
  • the touch display panel further includes a third refractive index layer, and the orthographic projection of the third refractive index layer on the first base substrate covers the orthographic projection of the first filling layer on the first base substrate.
  • the plurality of light-emitting devices are blue light-emitting devices;
  • the plurality of sub-pixel regions include: a plurality of red sub-pixel regions, a plurality of blue sub-pixel regions, and a plurality of green sub-pixel regions;
  • the quantum dot layer is only located in the first opening area corresponding to the red sub-pixel area and the green sub-pixel area.
  • the touch module includes a first touch electrode layer and a second touch electrode layer; an orthographic projection of the first touch electrode layer on the first substrate and the first opening area on the first substrate The orthographic projections of the substrates do not overlap with each other, and the orthographic projections of the second touch electrode layer on the first substrate and the orthographic projection of the first opening area on the first substrate do not overlap with each other.
  • An embodiment of the present disclosure provides a method for manufacturing a touch display panel, including:
  • a first base substrate is provided; the first base substrate includes a plurality of sub-pixel regions;
  • a plurality of light-emitting devices are formed on one side of the first base substrate; the light-emitting devices correspond to the sub-pixel areas in one-to-one correspondence;
  • a first pixel definition layer and a plurality of quantum dot layers are formed on a side of the light-emitting device away from the first base substrate; the first pixel definition layer includes a first opening area corresponding to the sub-pixel area, and the quantum dot layer is located at least partially Within the first opening area;
  • a stacked insulating structure is formed on the side of the quantum dot layer facing away from the light-emitting device; the stacked insulating structure includes at least a set of stacked first refractive index layers and a whole layer of second refractive index layers; the refractive index of the first refractive index layer is smaller than the first refractive index layer.
  • a first touch electrode layer is formed on a side of the stacked insulation structure facing away from the quantum dot layer.
  • the method before forming the stacked insulation structure on the side of the quantum dot layer facing away from the light-emitting device, the method further includes:
  • a stacked insulation structure is formed on the side of the quantum dot layer facing away from the light-emitting device, including:
  • first insulating layer on the side where the pattern of the first touch electrode layer is away from the second refractive index layer, and use a patterning process on the first insulating layer to form a second opening area corresponding to the quantum dot layer;
  • a first refractive index pattern is formed in the second opening area.
  • the method before forming the pattern of the first touch electrode layer on the side of the second refractive index layer facing away from the first buffer layer, the method further includes:
  • a third refractive index layer is formed on the side of the second refractive index layer away from the first buffer layer; the refractive index of the third refractive index layer is smaller than the refractive index of the second refractive index layer.
  • the quantum dot layer is located in part of the first opening area; after forming the first pixel definition layer and the plurality of quantum dot layers on the side of the light-emitting device away from the first substrate, the method further includes:
  • a first filling layer is formed in the first opening area outside the quantum dot layer; the orthographic projection of the first refractive index layer on the first substrate does not overlap with the orthographic projection of the first filling layer on the first substrate. .
  • the method further includes:
  • a fifth refractive index layer is formed on the side of the first filling layer facing away from the light-emitting device; the refractive index of the first buffer layer is different from the refractive index of the fifth refractive index layer; the fifth refractive index layer includes a first filling layer corresponding to the first filling layer.
  • Two refractive index patterns, the orthographic projection of the second refractive index pattern on the first base substrate at least covers the orthographic projection of the first filling layer on the first base substrate, and the orthogonal projection of the second refractive index pattern on the first base substrate The orthographic projection of the quantum dot layer on the first substrate does not overlap with each other.
  • a display device provided by an embodiment of the present disclosure includes a touch display panel provided by an embodiment of the present disclosure.
  • Figure 1 is a schematic structural diagram of a touch display device provided by an embodiment of the present disclosure
  • Figure 2 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 3 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 4 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 5 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 6 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 7 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 8 is a schematic structural diagram of a mesh electrode provided by an embodiment of the present disclosure.
  • Figure 9 is a schematic structural diagram of another grid-shaped electrode provided by an embodiment of the present disclosure.
  • Figure 10 is a schematic structural diagram of yet another grid-shaped electrode provided by an embodiment of the present disclosure.
  • Figure 11 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • Figure 12 is a schematic structural diagram of another touch display device provided by an embodiment of the present disclosure.
  • FIG. 13 is a schematic flowchart of a method for manufacturing a touch display device according to an embodiment of the present disclosure.
  • An embodiment of the present disclosure provides a touch display panel provided by an embodiment of the present disclosure. As shown in Figure 1, the touch display panel includes:
  • the first base substrate 1 includes a plurality of sub-pixel areas 2;
  • a plurality of light-emitting devices 3 are located on one side of the first base substrate 1 and correspond one to one to the sub-pixel areas 2;
  • the first pixel definition layer 4 is located on the side of the light-emitting device 3 away from the first base substrate 1 and includes a first opening area 5 corresponding to the sub-pixel area 2;
  • a plurality of quantum dot layers 6 are located on the side of the light-emitting device 3 away from the first substrate 1 and located in at least part of the first opening area 5;
  • the touch module 7 is located on the side of the quantum dot layer 6 away from the light-emitting device 3 and includes the first touch electrode layer M1;
  • At least one layer of stacked insulating structure 8 is located between the quantum dot layer 6 and the first touch electrode layer M1 for transmitting the light emitted by each quantum dot layer 6 and reflecting the light emitted by the light emitting device 3;
  • the stacked insulating structure 8 includes : the first refractive index layer 9 and the second refractive index layer 10 arranged throughout the layer; the refractive index of the first refractive index layer 9 is smaller than the refractive index of the second refractive index layer 10; the second refractive index layer 10 is located at the first refractive index between layer 9 and quantum dot layer 6;
  • the first refractive index layer 9 includes a plurality of first refractive index patterns 18, and the first refractive index patterns 18 correspond to the quantum dot layer 6 one-to-one; the first refractive index patterns 18 are in the first
  • the orthographic projection of the base substrate 1 at least covers the orthographic projection of the quantum dot layer 6 on the first base substrate 1 .
  • the quantum dot layer is used to absorb the light emitted by the light-emitting device to radiate light of a desired color.
  • the color of the light radiated by the quantum dot layer is the same as the color of the sub-pixel area corresponding to the quantum dot layer.
  • the display panel provided by the embodiment of the present disclosure includes at least one layer of stacked insulation structure.
  • the stacked insulation structure includes a second refractive index layer and a first refractive index layer with different refractive index stacked on the side of the quantum dot layer away from the light-emitting device.
  • the refractive index of the second refractive index layer is greater than that of the first refractive index layer. Light interferes at the interface between the second refractive index layer and the first refractive index layer, causing the light reflectivity or transmittance to increase in a specific wavelength range.
  • the light emitted from each quantum dot layer is emitted from the stacked insulating structure, and the light emitted from the light-emitting device is reflected and used again by the quantum dot layer. , which can improve the light utilization rate and conversion rate, and improve the front light extraction efficiency of the touch display panel. It can also reduce the leakage of light emitted from the light-emitting device and improve the color purity of the display panel.
  • the touch display device In order to reduce the leakage of light emitted from the light-emitting device and improve the color purity of the display panel, the touch display device provided by the embodiment of the present disclosure does not need to provide a color film on the light exit side of the quantum dot layer, which can reduce the size of the touch display panel.
  • the thickness can also save costs.
  • the touch module is located on the side of the quantum dot layer away from the light-emitting device, so that the distance between the touch module and the light-emitting device can be increased and the touch module in the touch module can be avoided. Parasitic capacitance is generated between the control electrode layer and the cathode of the light-emitting device, which can improve touch accuracy.
  • FIG. 1 only one layer of stacked insulation structure is provided in the touch display panel as an example for illustration.
  • a multi-layer stacked insulating structure may also be stacked.
  • the multi-layer first reflective mechanism stack can also transmit the light emitted from each quantum dot layer and reflect the light emitted from the light-emitting device.
  • the touch module 7 further includes: a first buffer layer 19 located between the quantum dot layer 6 and the first touch electrode layer M1 . the second touch electrode layer M2 between the first buffer layer 19 and the first insulating layer 20 between the first touch electrode layer M1 and the second touch electrode layer M2;
  • the second refractive index layer 10 is located between the first buffer layer 19 and the second touch electrode layer M2;
  • the first insulating layer 20 includes a second opening area 27 corresponding to the quantum dot layer 6 one-to-one, and the first refractive index pattern 18 is located in the second opening area 27 .
  • the stacked insulation structure is provided in the touch module, and the first refractive index pattern is located in the second opening area, that is, the first refractive index pattern and the first insulating layer are located in the same film layer.
  • placing the first refractive index pattern and the first insulation layer on the same film layer can avoid excessively increasing the thickness of the touch module, thereby avoiding excessively increasing the thickness of the touch display panel.
  • the thickness of the first refractive index pattern is equal to the thickness of the first insulating layer in a direction perpendicular to the first base substrate. This can reduce the difficulty of preparing the first refractive index pattern.
  • the touch module 7 further includes a first protective layer 21 located on the side of the first touch electrode layer facing away from the first base substrate.
  • the material of the first buffer layer includes silicon nitride (SiN x ).
  • the thickness of the first buffer layer is greater than or equal to 0.2 microns and less than or equal to 0.4 microns.
  • the material of the second refractive index layer includes silicon oxynitride ( SiNOx ).
  • the refractive index of the second refractive index layer is greater than or equal to 1.65 and less than or equal to 1.75.
  • the material of the first refractive index pattern may be an inorganic material.
  • the material of the first refractive index pattern includes silicon oxide (SiO x ).
  • the refractive index of the first refractive index pattern is greater than or equal to 1.45 and less than or equal to 1.55.
  • the material of the first refractive index pattern may also include aluminum oxide (Al 2 O 3 ), magnesium fluoride (MgF 2 ), boron oxide (B 2 O 3 ), etc.
  • the material of the first refractive index pattern may be an organic material.
  • the material of the first refractive index pattern includes one of the following or a combination thereof: acrylic resin, polyurethane resin, silicone resin, and epoxy resin.
  • the refractive index of the first refractive index pattern is greater than or equal to 1.30 and less than or equal to 1.50.
  • the thickness of the second refractive index layer is less than the thickness of the first refractive index pattern.
  • the thickness of the second refractive index layer is greater than or equal to 0.1 micron and less than or equal to 0.2 micron. Regardless of whether the material of the first refractive index pattern is an inorganic material or an organic material, the thickness of the first refractive index pattern can be set to be greater than or equal to 0.2 microns and less than or equal to 0.4 microns.
  • the stacked insulation structure 8 further includes:
  • the third refractive index layer 28 is located between the first refractive index layer 9 and the second refractive index layer 10; the refractive index of the third refractive index layer 28 is smaller than the refractive index of the second refractive index layer 10.
  • the third refractive index layer 28 The refractive index of is not equal to the refractive index of the first refractive index layer 9 .
  • the stacked insulation structure further includes a third refractive index layer located between the first refractive index layer and the second refractive index layer, and the refractive index of the third refractive index layer is smaller than that of the second refractive index layer.
  • the refractive index, the refractive index of the third refractive index layer is not equal to the refractive index of the first refractive index layer, the light at the interface between the second refractive index layer and the third refractive index layer and the third refractive index layer and the first refractive index layer Interference occurs at the interface between the rate layers, making it easier to increase the light reflectivity or transmittance within a specific wavelength range, making it easier for the light emitted from each quantum dot layer to exit the light-emitting device from the stacked insulating structure.
  • the light is reflected, so that more light emitted by the light-emitting device is reflected and used again by the quantum dot layer, which can further improve the light utilization rate and conversion rate, improve the front light extraction efficiency of the touch display panel, and improve the color of the touch display panel. purity.
  • the third refractive index layer includes an organic matrix.
  • the material of the organic matrix includes one of the following or a combination thereof: silane resin, epoxy resin.
  • the refractive index of the third refractive index pattern is greater than or equal to 1.45 and less than or equal to 1.60.
  • the refractive index of the third refractive index layer is less than the refractive index of the first refractive index layer.
  • the refractive index of the third refractive index layer is greater than or equal to 1.25 and less than or equal to 1.45.
  • the third refractive index layer further includes hollow particles dispersed in an organic matrix. That is, the third refractive index layer in the touch display panel provided by the embodiment of the present disclosure is composed of an organic matrix and hollow particles dispersed in the organic matrix. Adding hollow particles to the organic matrix can reduce the refractive index of the entire film layer, making it easier to achieve the third refractive index layer.
  • the refractive index of the third refractive index layer is smaller than the refractive index of the second refractive index layer and the refractive index of the third refractive index layer is not equal to the refractive index of the first refractive index layer.
  • the hollow particles have a core-shell structure
  • the material of the shell includes silicon oxide
  • the part of the core wrapped by the shell is air.
  • the mass percentage of the hollow particles in the organic matrix is greater than or equal to 40% and less than or equal to 70%.
  • the thickness of the third refractive index layer is greater than or equal to 0.1 micron and less than or equal to 0.2 micron.
  • the quantum dot layer 6 is located in part of the first opening area 5;
  • the touch display panel also includes: a plurality of first filling layers 25 located in the first opening area 5 outside the quantum dot layer 6;
  • the orthographic projection of the first refractive index layer 9 on the first base substrate 1 and the orthographic projection of the first filling layer 25 on the first base substrate 1 do not overlap with each other.
  • the first opening area where the quantum dot layer is not provided is filled with the first filling layer.
  • the first filling layer is a light-transmitting film layer
  • the color of the sub-pixel corresponding to the first filling layer is the luminous color of the light-emitting device.
  • the touch display panel further includes: a first light-transmitting structure 29 located between the first filling layer 25 and the first touch electrode layer M1 for transmitting light. The light emitted by the light-emitting device 3;
  • the first light-transmitting structure 29 includes: a fourth refractive index layer 31, a fifth refractive index layer 30 located between the fourth refractive index layer 31 and the first filling layer 25; the refractive index of the fourth refractive index layer 31 is the same as the fifth refractive index layer 31.
  • the refractive index of the refractive index layer 30 is different; the fifth refractive index layer 30 includes a second refractive index pattern 32 that corresponds to the first filling layer 25 one-to-one, and the orthographic projection of the second refractive index pattern 32 on the first base substrate 1 at least covers The orthographic projection of the first filling layer 25 on the first base substrate 1 , and the orthographic projection of the second refractive index pattern 32 on the first base substrate 1 is different from the orthographic projection of the quantum dot layer 6 on the first base substrate 1 . overlap.
  • a first light-transmitting structure is provided between the first filling layer and the first touch electrode layer, and the first light-transmitting structure includes a fourth refractive index layer with different refractive index and a first light-transmitting structure.
  • the first light-transmitting structure includes a fourth refractive index layer with different refractive index and a first light-transmitting structure.
  • the five-refractive index layer light interferes at the interface between the fourth refractive index layer and the fifth refractive index layer. Adjusting the refractive index of the fourth refractive index layer and the fifth refractive index layer can increase the emission of the light-emitting device. The transmittance of light.
  • the first buffer layer 19 is multiplexed as the fourth refractive index layer 31 . Therefore, it is possible to avoid excessively increasing the thickness of the touch module, thereby avoiding excessively increasing the thickness of the touch display panel, while arranging the first light-transmitting structure that increases the transmittance of the light emitted by the light-emitting device.
  • the first buffer layer covers the second refractive index pattern, which can ensure insulation and water and oxygen barrier effects.
  • the material of the fifth refractive index layer is an inorganic material.
  • the inorganic material is, for example, SiO x , and the refractive index of SiO x is 1.45 or more and 1.55 or less.
  • the inorganic material can also be Al 2 O 3 , MgF 2 , B 2 O 3 , etc.
  • the thickness of the fifth refractive index layer is greater than or equal to 0.05 microns and less than or equal to 0.1 microns.
  • the orthographic projection of the second refractive index layer 10 on the first base substrate 1 covers the orthographic projection of the first filling layer 25 on the first base substrate 1 .
  • the touch display panel when the touch display panel further includes a third refractive index layer 28 , the orthographic projection of the third refractive index layer 28 on the first base substrate 1 covers the first filling.
  • Layer 25 is an orthographic projection of the first base substrate.
  • both the second refractive index layer and the third refractive index layer can be extended to cover the area corresponding to the first filling layer, and both the second refractive index layer and the third refractive index layer can be provided as a whole layer. Since the first refractive index pattern is not provided in the area corresponding to the first filling layer, neither the second refractive index layer nor the third refractive index layer in the area corresponding to the first filling layer will affect the light emitted by the light emitting device.
  • the plurality of sub-pixel areas 2 include: a plurality of red sub-pixel areas R, a plurality of blue sub-pixel areas B, and a plurality of green sub-pixel areas G.
  • the plurality of light-emitting devices are all blue light-emitting devices; as shown in Figures 1 to 4, the quantum dot layer 6 is only located in the first opening area 5 corresponding to the red sub-pixel area R and the green sub-pixel area G. .
  • a red light quantum dot layer r is provided in the first opening area 5 corresponding to the red sub-pixel area R.
  • the red light quantum dot layer r absorbs blue light and radiates red light;
  • the green sub-pixel area G corresponds to A green light quantum dot layer g is disposed in the first opening area 5, and the green light quantum dot layer g absorbs blue light and radiates green light. Since the light-emitting device is a blue light-emitting device, the blue sub-pixel area B can achieve full-color display on the touch display panel without providing a quantum dot layer.
  • the material of the quantum dot layer includes a core-shell quantum dot structure; in the core-shell quantum dot structure, the core material can be, for example, cadmium selenide (CdSe) or indium phosphide (InP); in the core-shell quantum dot structure, the shell material can be, for example, cadmium selenide (CdSe) or indium phosphide (InP). Can be zinc sulfide (ZnS).
  • the first filling structure 25 is located in the first opening area 5 corresponding to the blue sub-pixel area B.
  • both the first filling structure and the first pixel definition layer may include resin materials.
  • the first pixel definition layer includes light-shielding resin material, and the filling structure includes light-transmitting resin material.
  • the orthographic projection of the first touch electrode layer M1 and the second touch electrode layer M2 on the first base substrate 1 and the first opening area 5 are on the first substrate.
  • the orthographic projections of the base substrate 1 do not overlap with each other.
  • the first touch electrode layer M1 and the second touch electrode layer M2 will not affect the light emission of the sub-pixels and avoid affecting the normal display of the touch display substrate.
  • the first touch electrode layer and the second touch electrode layer include a plurality of touch electrodes.
  • the touch electrodes include a plurality of touch sensing electrodes RX and a plurality of touch driving electrodes TX that intersect with each other; each touch sensing electrode RX includes: a plurality of touch sensing electrodes RX.
  • each touch driving electrode TX includes: a plurality of touch driving sub-electrodes 33, and a connecting portion 35 connecting adjacent touch driving sub-electrodes. 33 of the bridge electrode 34.
  • the touch sensing sub-electrodes 36 and the connecting portion 35 are integrally connected, and the touch sensing sub-electrodes 36, the connecting portion 35 and the touch driving sub-electrodes 33 are arranged on the same layer.
  • the touch sensing electrode RX extends along the first direction X
  • the touch driving electrode TX extends along the second direction Y
  • the first direction X intersects the second direction Y, for example, the first direction X Perpendicular to the second direction Y.
  • the positions of the touch sensing electrodes RX and the touch driving electrodes TX can be interchanged.
  • the outlines of the touch sensing sub-electrodes and the touch driving sub-electrodes are diamond-shaped block electrodes as an example for illustration.
  • both the touch driving electrodes and the touch sensing electrodes are grid electrodes 37 .
  • the touch area of the touch display panel coincides with the display area.
  • the grid-shaped The electrode 37 includes a plurality of holes 38.
  • the orthographic projection of the holes 38 on the first substrate corresponds to the orthographic projection of the sub-pixel 2 on the first substrate.
  • the orthographic projection of the first opening region on the first substrate substrate falls within the orthographic projection of the hole 38 on the first substrate substrate. In this way, it is possible to avoid the touch driving electrodes and the touch sensing electrodes from affecting the light emission of the sub-pixels, and thus avoid affecting the normal display of the touch display substrate.
  • FIG. 8 to FIG. 10 respectively show the sub-pixel arrangement.
  • one pixel includes three sub-pixels, and the three sub-pixels are red sub-pixel R, green sub-pixel G and blue sub-pixel B respectively.
  • the area of the light-emitting area of the red sub-pixel R is larger than the area of the green sub-pixel G.
  • the area of the green sub-pixel G light-emitting area is larger than the area of the blue sub-pixel B.
  • the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are arranged in a rectangle.
  • the red sub-pixel R, the green sub-pixel G and the blue sub-pixel B are arranged in a triangle.
  • the shape of the red sub-pixel R light-emitting area, the green sub-pixel G light-emitting area and the blue sub-pixel B light-emitting area is a quadrilateral
  • the shape of the hole 38 is a quadrilateral.
  • the shape of the red sub-pixel R light-emitting area, the green sub-pixel G light-emitting area and the blue sub-pixel B light-emitting area is an octagon.
  • the shape of the hole 38 is an octagon.
  • the shape of the red sub-pixel R light-emitting area, the green sub-pixel G light-emitting area and the blue sub-pixel B light-emitting area is a quadrilateral.
  • the shape of the hole 38 is approximately a quadrilateral.
  • the shape of the hole 38 is a quadrilateral with curved sides.
  • the grid of the grid electrode is linear, and in Figure 10, the grid of the grid electrode is curved.
  • the material of the first touch electrode layer and the second touch electrode layer includes titanium/aluminum/titanium stack; the material of the first protective layer includes polyimide (PI).
  • the thickness of titanium is, for example, greater than or equal to 30 nanometers (nm) and less than or equal to 50 nm
  • the thickness of aluminum is, for example, greater than or equal to 100 nm and less than or equal to 300 nm.
  • the thickness of the first insulating layer is, for example, 0.2 micrometer or more and 0.4 micrometer or less.
  • the thickness of the first protective layer is, for example, greater than or equal to 1 micron and less than or equal to 2 microns.
  • the light emitting device is an electroluminescent device.
  • the electroluminescent device is, for example, an organic light-emitting diode device.
  • the electroluminescent device can also be other light-emitting devices such as Micro LED and Mini LED.
  • the light-emitting device is an OLED as an example.
  • the touch display panel further includes: a driving circuit layer 22 located between the first substrate 1 and the light-emitting device 3 , and a driving circuit layer 22 located between the driving circuit layer 22 and the first pixel.
  • the second pixel definition layer 23 between the definition layers 4, the encapsulation layer 14 between the light emitting device 3 and the first pixel definition layer 4, and the first planarization between the first pixel definition layer 4 and the first buffer layer 19 Layer 26.
  • the second pixel definition layer 23 includes a third opening area 24 corresponding to the sub-pixel area 2; the light-emitting device 3 includes an anode 11, a light-emitting functional layer 12, and a cathode 13 stacked in sequence in the third opening area 24, wherein, The anode 11 is located between the second pixel definition layer 23 and the driving circuit layer 22 .
  • the second pixel definition layer 23 covers the edge of the anode 11 .
  • the cathodes 13 corresponding to the plurality of sub-pixel regions 2 are integrally connected.
  • the display panel may further include a light extraction layer between the cathode and the encapsulation layer.
  • the driving circuit layer includes a plurality of pixel driving circuits arranged in an array; the pixel driving circuit is used to drive the light-emitting device to emit light; as shown in Figure 11, the pixel driving circuit includes a thin film transistor TFT and a storage capacitor (not shown) ;
  • the thin film transistor TFT includes: an active layer 122, a gate G, a source S, and a drain D;
  • Figure 11 takes the thin film transistor TFT as a top-gate structure as an example for illustration.
  • the thin-film transistor TFT can also be a bottom-gate or bottom-gate structure. other structures. As shown in FIG.
  • the display substrate also includes: a second buffer layer 40 located between the first substrate substrate 1 and the active layer 39 ; the driving circuit layer 22 also includes: located between the active layer 39 and the gate G
  • the anode 11 is connected to the drain D through a via hole penetrating the second planarization layer 38 .
  • the light-emitting functional layer includes an organic light-emitting layer, and may also include an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, etc.
  • the organic light-emitting layers corresponding to each sub-pixel area all emit blue light, but the light-emitting spectra of the organic light-emitting layers corresponding to each sub-pixel area may be the same or different.
  • the encapsulation layer 14 includes: a first inorganic encapsulation film 15 , an organic encapsulation film 16 , and a second inorganic encapsulation film 17 arranged in a stack.
  • Figures 1 to 4 take the preparation of the quantum dot layer and the first pixel definition layer directly on the encapsulation layer 14 as an example for illustration.
  • the display substrate 43 including the light-emitting device 3 and the color transfer substrate 44 including the quantum dot layer 6 and the first pixel definition layer 4 can be separately manufactured, and then the display substrate and the color transfer substrate can be separately manufactured.
  • the substrates are bonded through the box-to-box process.
  • the color transfer substrate 44 also includes a second substrate substrate 45 and a capping layer 46; the second substrate substrate 45 is located on the side of the quantum dot layer 6 away from the encapsulation layer 14, and the capping layer 46 is located on the quantum dot layer. 6 and the packaging layer 14.
  • the touch display device also includes an adhesive layer 47 located between the display substrate 43 and the color transfer substrate 44 .
  • the first buffer layer 19 is located on the side of the second substrate substrate 45 away from the quantum dot layer 6 .
  • the touch display panel a is a panel that does not include a stacked insulating structure and a first light-transmitting structure, that is, the touch module only includes a first buffer layer, a second touch electrode layer, a first insulating layer, and The first touch electrode layer and the first protective layer;
  • the structure of touch display panel b is shown in Figure 1
  • the structures of touch display panels c and d are shown in Figure 2
  • the structure of touch display panel e is shown in Figure 4 shown.
  • the material of the first buffer layer is SiN x
  • the thickness of SiN x is greater than or equal to 0.2 microns and less than or equal to 0.4 microns
  • the material of the first refractive index layer is SiO x , SiO x
  • the refractive index of SiNO x is greater than or equal to 1.45 and less than or equal to 1.55, the thickness of SiO
  • the thickness of The refractive index of the index layer is greater than or equal to 1.45 and less than or equal to 1.60
  • the refractive index of the third refractive index layer in the touch display panel c is greater than or equal to 1.25 and less than or equal to 1.45
  • the material of the fifth refractive index layer is SiO x
  • the refractive index of SiO x is greater than or equal to 1.45 and less than or equal to 1.55, and the thickness of SiO x is greater than or equal to 0.05 micrometer and less than or equal
  • Rx, Ry, Gx, Gy, Bx, and By represent color coordinates
  • R_Eff, G_Eff, B_Eff, and W_Eff represent light effects. According to Table 1, it can be concluded that since the embodiment of the present disclosure is provided with a stacked insulation structure, the future can be The utilized blue light reflection excites the quantum dot layer to emit light again. Therefore, compared with the touch display panel a without a stacked insulation structure, the color purity and color of the touch display panels b, c, d, and e provided by the embodiments of the present disclosure are better. The areas are greatly improved, and the unused blue light reflection once again excites the quantum dot layer to emit light, which increases the conversion rate of the quantum dot layer.
  • the R_Eff, G_Eff, and W_Eff light effects are all improved.
  • the color gamut of the touch display panels b, c, d, and e provided by the embodiments of the present disclosure is gradually improved.
  • the touch display panel e is also provided with a first light-transmitting structure that improves blue light transmittance, the blue light efficacy B_Eff can be improved.
  • embodiments of the present disclosure also provide a method for manufacturing a touch display panel, as shown in Figure 13, including:
  • the first substrate includes a plurality of sub-pixel areas
  • the first pixel definition layer includes a first opening area corresponding to the sub-pixel area, and the quantum dot layer is located At least part of the first opening area;
  • the stacked insulation structure includes at least a set of stacked first refractive index layers and a whole layer of second refractive index layers; the refractive index of the first refractive index layer The refractive index is less than the second refractive index layer; the second refractive index layer is located between the first refractive index layer and the quantum dot layer; the first refractive index layer includes a first refractive index pattern corresponding to the quantum dot layer; the first refractive index
  • the orthographic projection of the rate pattern on the first substrate at least covers the orthographic projection of the quantum dot layer on the first substrate;
  • At least one layer of stacked insulating structure is formed on the side of the quantum dot layer facing away from the light-emitting device layer.
  • the stacked insulating structure includes stacking on the side of the quantum dot layer facing away from the light-emitting device layer.
  • the second refractive index layer and the first refractive index layer have different refractive indexes, and the refractive index of the second refractive index layer is greater than the first refractive index layer. Light interferes at the interface between the second refractive index layer and the first refractive index layer, causing the light reflectivity or transmittance to increase in a specific wavelength range.
  • the light emitted from each quantum dot layer is emitted from the stacked insulating structure, and the light emitted from the light-emitting device is reflected and used again by the quantum dot layer. , which can improve the light utilization rate and conversion rate, and improve the front light extraction efficiency of the touch display panel. It can also reduce the leakage of light emitted from the light-emitting device and improve the color purity of the display panel.
  • the touch module is located on the side of the quantum dot layer away from the light-emitting device, the distance between the touch module and the light-emitting device can be increased to avoid contact between the touch electrode layer in the touch module and the cathode of the light-emitting device. Parasitic capacitance is generated between them, which can improve touch accuracy.
  • the method before forming the plurality of light-emitting devices on one side of the first substrate, the method further includes:
  • Patterns of a second buffer layer, an active layer, a first gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode and a drain electrode, and a second planarization layer are sequentially formed on one side of the first base substrate;
  • a plurality of light-emitting devices are formed on one side of the first base substrate, specifically including:
  • a cathode is formed on the side of the light-emitting functional layer facing away from the anode;
  • the method further includes:
  • a first inorganic encapsulation film, an organic encapsulation film, and a second inorganic encapsulation film are formed in sequence on the side of the cathode away from the light-emitting functional layer.
  • forming a first pixel definition layer and a plurality of quantum dot layers on a side of the light-emitting device facing away from the first base substrate specifically includes:
  • a first pixel definition layer is formed on the side of the second inorganic encapsulation film facing away from the organic encapsulation film, and a patterning process is performed on the first pixel definition layer to form a plurality of first opening areas;
  • a quantum dot layer is formed within at least part of the first opening area.
  • the method further includes:
  • a first planarization layer is formed overlying the quantum dot layer and the first pixel defining layer.
  • forming a first pixel definition layer and a plurality of quantum dot layers on a side of the light-emitting device away from the first base substrate specifically includes:
  • a second base substrate Provide a second base substrate, form a first pixel definition layer on one side of the second base substrate, and perform a patterning process on the first pixel definition layer to form a plurality of first opening areas;
  • the color transfer substrate is bonded to the display substrate including the light-emitting device using a box-matching process.
  • the capping layer and the encapsulation layer are bonded through an adhesive layer, so that the color transfer substrate and the display substrate including the light-emitting device are bonded together.
  • the method before forming the stacked insulation structure on the side of the quantum dot layer facing away from the light-emitting device, the method further includes:
  • a stacked insulation structure is formed on the side of the quantum dot layer facing away from the light-emitting device, including:
  • a first refractive index pattern is formed in the second opening area.
  • a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) process is used to deposit SiN x to form the first buffer layer.
  • PECVD plasma enhanced chemical vapor deposition
  • PECVD process is used to deposit SiNO x to form a second refractive index layer.
  • a sputtering process can be used to sequentially form titanium/aluminum/titanium.
  • PECVD process is used to deposit SiN x to form a first insulating layer, and then exposure, development, etching and other patterning processes are used to form the second opening area on the first insulating layer.
  • the material included in the first refractive index pattern is an inorganic material
  • a PECVD process combined with metal mask technology can be used to form the first refractive index pattern in the second opening area;
  • the first refractive index pattern when the material included in the pattern is an organic material, for example, an inkjet printing process combined with metal mask technology can be used to form the first refractive index pattern in the second opening area.
  • the method further includes:
  • a first protective layer is formed on a side of the first touch electrode layer facing away from the first base substrate.
  • the method before forming the pattern of the first touch electrode layer on the side of the second refractive index layer facing away from the first buffer layer, the method further includes:
  • a third refractive index layer is formed on the side of the second refractive index layer away from the first buffer layer; the refractive index of the third refractive index layer is smaller than the refractive index of the second refractive index layer.
  • spin-coating organic material is used on the side of the second refractive index layer away from the first buffer layer to form the third refractive index layer.
  • the organic material can be silane resin, epoxy resin, etc.
  • the organic material can also be doped with hollow particles, and the organic material doped with hollow particles can be spin-coated to form a third refractive index layer.
  • the quantum dot layer is located in part of the first opening area; after forming the first pixel definition layer and the plurality of quantum dot layers on the side of the light-emitting device away from the first substrate, the method further includes:
  • a first filling layer is formed in the first opening area outside the quantum dot layer; the orthographic projection of the first refractive index layer on the first substrate does not overlap with the orthographic projection of the first filling layer on the first substrate. .
  • the method further includes:
  • a fifth refractive index layer is formed on the side of the first filling layer facing away from the light-emitting device; the refractive index of the first buffer layer is different from the refractive index of the fifth refractive index layer; the fifth refractive index layer includes a first filling layer corresponding to the first filling layer.
  • Two refractive index patterns, the orthographic projection of the second refractive index pattern on the first base substrate at least covers the orthographic projection of the first filling layer on the first base substrate, and the orthogonal projection of the second refractive index pattern on the first base substrate The orthographic projection of the quantum dot layer on the first substrate does not overlap with each other.
  • the PECVD process combined with metal mask technology can be used to form the second refractive index pattern in the area corresponding to the first opening area outside the quantum dot layer.
  • a display device provided by an embodiment of the present disclosure includes a touch display panel provided by an embodiment of the present disclosure.
  • the display device provided by the embodiment of the present disclosure is: a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, or any other product or component with a display function.
  • Other essential components of the display device are understood by those of ordinary skill in the art, and will not be described in detail here, nor should they be used to limit the present disclosure.
  • inventions of the present disclosure provide a touch display panel, a preparation method thereof, and a display device.
  • the touch display panel includes at least one layer of stacked insulation structure.
  • the stacked insulation structure includes a second refractive index layer and a first refractive index layer with different refractive index stacked on a side of the quantum dot layer away from the light-emitting device.
  • the second refractive index layer The refractive index is greater than that of the first refractive index layer. Light interferes at the interface between the second refractive index layer and the first refractive index layer, causing the light reflectivity or transmittance to increase in a specific wavelength range.
  • the light emitted from each quantum dot layer is emitted from the stacked insulating structure, and the light emitted from the light-emitting device is reflected and used again by the quantum dot layer. , which can improve the light utilization rate and conversion rate, and improve the front light extraction efficiency of the touch display panel. It can also reduce the leakage of light emitted from the light-emitting device and improve the color purity of the display panel.
  • the touch display device In order to reduce the leakage of light emitted from the light-emitting device and improve the color purity of the display panel, the touch display device provided by the embodiment of the present disclosure does not need to provide a color film on the light exit side of the quantum dot layer, which can reduce the size of the touch display panel.
  • the thickness can also save costs.
  • the touch module is located on the side of the quantum dot layer away from the light-emitting device, so that the distance between the touch module and the light-emitting device can be increased and the touch module in the touch module can be avoided. Parasitic capacitance is generated between the control electrode layer and the cathode of the light-emitting device, which can improve touch accuracy.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Position Input By Displaying (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本公开提供了触控显示面板及其制备方法、显示装置。触控显示面板包括：第一衬底基板，包括子像素区；多个发光器件，与子像素区一一对应；第一像素定义层，包括与子像素区一一对应的第一开口区；多个量子点层，位于至少部分第一开口区内；触控模组包括第一触控电极层；至少一层堆叠绝缘结构，用于透过各量子点层出射的光且反射发光器件出射的光；堆叠绝缘结构包括第一折射率层和第二折射率层；第一折射率层的折射率小于第二折射率层的折射率；第二折射率层位于第一折射率层与量子点层之间；第一折射率层包括多个第一折射率图案，第一折射率图案与量子点层一一对应；第一折射率图案在第一衬底基板的正投影至少覆盖量子点层在第一衬底基板的正投影。

Description

触控显示面板及其制备方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种触控显示面板及其制备方法、显示装置。
背景技术
有机电致发光二极管(Organic Light Emitting Diode,OLED)具有自发光、宽视角、广色域、高对比度、轻薄、可折叠、可弯曲、轻薄易携带等特点，成为显示领域研发的主要方向。但其发光光谱较宽，色域覆盖率已经达到了峰值，限制了其发展。量子点发光二极管(Quantum Dots Light Emitting Diode，QLED)作为一种新兴的技术由于其量子点材料本身具有的量子限制效应其连续的能带变为分立的能级，可发射峰宽较窄的高纯度光，近些年备受人们关注与研究。现阶段技术较为成熟的量子点(Quantum Dots，QD)-OLED器件采用非像素化的蓝光OLED器件作为背光源，以蓝光激发红光QD和绿光QD分别出射红光、绿光，但QD材料本身对蓝光背光的吸收有限，限制了量子点的发光效率，从而影响显示器件正面出光效率以及显示器的色域。
发明内容
本公开实施例提供的一种触控显示面板，触控显示面板包括：
第一衬底基板，包括多个子像素区；
多个发光器件，位于第一衬底基板的一侧，与子像素区一一对应；
第一像素定义层，位于发光器件背离第一衬底基板的一侧，包括与子像素区一一对应的第一开口区；
多个量子点层，位于发光器件背离第一衬底基板的一侧，且位于至少部分第一开口区内；
触控模组，位于量子点层背离发光器件一侧，包括第一触控电极层；
至少一层堆叠绝缘结构，位于量子点层与第一触控电极层之间，用于透过各量子点层出射的光且反射发光器件出射的光；堆叠绝缘结构包括：第一折射率层和整层设置的第二折射率层；第一折射率层的折射率小于第二折射率层的折射率；第二折射率层位于第一折射率层与量子点层之间；第一折射率层包括多个第一折射率图案，第一折射率图案与量子点层一一对应；第一折射率图案在第一衬底基板的正投影至少覆盖量子点层在第一衬底基板的正投影。
在一些实施例中，触控模组还包括：位于量子点层与第一触控电极层之间的第一缓冲层，位于第一触控电极层与第一缓冲层之间的第二触控电极层，以及位于第一触控电极层和第二触控电极层之间的第一绝缘层；
第二折射率层位于第一缓冲层与第二触控电极层之间；
第一绝缘层包括与量子点层一一对应的第二开口区，第一折射率图案位于第二开口区内。
在一些实施例中，在垂直于第一衬底基板方向上，第一折射率图案的厚度等于第一绝缘层的厚度。
在一些实施例中，第一折射率图案的材料包括氧化硅。
在一些实施例中，第一折射率图案的折射率大于等于1.45且小于等于1.55。
在一些实施例中，第一折射率图案的材料包括下列之一或其组合：丙烯酸树脂、聚氨基甲酸酯树脂、硅酮树脂、环氧树脂。
在一些实施例中，第一折射率图案的折射率大于等于1.30且小于等于1.50。
在一些实施例中，第二折射率层的材料包括氮氧化硅。
在一些实施例中，第二折射率层的折射率大于等于1.65且小于等于1.75。
在一些实施例中，堆叠绝缘结构还包括：
第三折射率层，位于第一折射率层和第二折射率层之间；第三折射率层的折射率小于第二折射率层的折射率，且第三折射率层的折射率与第一折射率层的折射率不相同。
在一些实施例中，第三折射率层包括有机基质。
在一些实施例中，有机基质的材料包括下列之一或其组合：硅烷树脂、环氧树脂。
在一些实施例中，第三折射率图案的折射率大于等于1.45且小于等于1.60。
在一些实施例中，第三折射率层的折射率小于第一折射率层的折射率。
在一些实施例中，第三折射率层的折射率大于等于1.25且小于等于1.45。
在一些实施例中，第三折射率层还包括分散于有机基质的中空粒子。
在一些实施例中，量子点层位于部分第一开口区内；
触控显示面板还包括：多个第一填充层，位于设置量子点层之外的第一开口区内；
第一折射率层在第一衬底基板的正投影与第一填充层在第一衬底基板的正投影互不交叠。
在一些实施例中，触控显示面板还包括：第一透光结构，位于第一填充层与触控电极层之间，用于透过发光器件发出的光；
第一透光结构包括：第四折射率层，位于第四折射率层与第一填充层之间的第五折射率层；第四折射率层的折射率与第五折射率层的折射率不同；第五折射率层包括与第一填充层一一对应第二折射率图案，第二折射率图案在第一衬底基板的正投影至少覆盖第一填充层在第一衬底基板的正投影，且第二折射率图案在第一衬底基板的正投影与量子点层在第一衬底基板的正投影互不交叠。
在一些实施例中，触控模组包括第一缓冲层，第一缓冲层复用为第四折射率层。
在一些实施例中，第二折射率层在第一衬底基板的正投影覆盖第一填充层在第一衬底基板的正投影。
在一些实施例中，触控显示面板还包括第三折射率层，第三折射率层在第一衬底基板的正投影覆盖第一填充层在第一衬底基板的正投影。
在一些实施例中，多个发光器件为蓝光发光器件；多个子像素区包括：多个红色子像素区，多个蓝色子像素区，以及多个绿色子像素区；
量子点层仅位于红色子像素区以及绿色子像素区对应的第一开口区内。
在一些实施例中，触控模组包括第一触控电极层和第二触控电极层；第一触控电极层在第一衬底基板的正投影与第一开口区在第一衬底基板的正投影互不交叠，且第二触控电极层在第一衬底基板的正投影与第一开口区在第一衬底基板的正投影互不交叠。
本公开实施例提供的一种触控显示面板的制备方法，包括：
提供第一衬底基板；第一衬底基板包括多个子像素区；
在第一衬底基板的一侧形成多个发光器件；发光器件与子像素区一一对应；
在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层；第一像素定义层包括与子像素区一一对应的第一开口区，量子点层位于至少部分第一开口区内；
在量子点层背离发光器件一侧形成堆叠绝缘结构；堆叠绝缘结构包括至少一组堆叠设置的第一折射率层和整层设置的第二折射率层；第一折射率层的折射率小于第二折射率层的折射率；第二折射率层位于第一折射率层与量子点层之间；一折射率层包括多个第一折射率图案，第一折射率图案与量子点层一一对应；第一折射率图案在第一衬底基板的正投影至少覆盖量子点层在第一衬底基板的正投影；
在堆叠绝缘结构背离量子点层一侧形成第一触控电极层。
在一些实施例中，在量子点层背离发光器件一侧形成堆叠绝缘结构之前，方法还包括：
在量子点层背离发光器件一侧形成第一缓冲层；
在量子点层背离发光器件一侧形成堆叠绝缘结构，具体包括：
在第一缓冲层背离量子点层一侧形成第二折射率层；
在第二折射率层背离第一缓冲层一侧形成第一触控电极层的图案；
在第一触控电极层的图案背离第二折射率层一侧形成第一绝缘层，并对第一绝缘层采用图形化工艺，形成与量子点层一一对应的第二开口区；
在第二开口区内形成第一折射率图案。
在一些实施例中，在第二折射率层背离第一缓冲层一侧形成第一触控电极层的图案之前，还包括：
在第二折射率层背离第一缓冲层一侧形成第三折射率层；第三折射率层的折射率小于第二折射率层的折射率。
在一些实施例中，量子点层位于部分第一开口区内；在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层之后，还包括：
在量子点层之外的第一开口区内形成第一填充层；第一折射率层在第一衬底基板的正投影与第一填充层在第一衬底基板的正投影互不交叠。
在一些实施例中，在量子点层之外的第一开口区内形成第一填充层之后，还包括：
在第一填充层背离发光器件一侧形成第五折射率层；第一缓冲层的折射率与第五折射率层的折射率不同；第五折射率层包括与第一填充层一一对应第二折射率图案，第二折射率图案在第一衬底基板的正投影至少覆盖第一填充层在第一衬底基板的正投影，且第二折射率图案在第一衬底基板的正投影与量子点层在第一衬底基板的正投影互不交叠。
本公开实施例提供的一种显示装置，包括本公开实施例提供的触控显示面板。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的一种触控显示装置的结构示意图；
图2为本公开实施例提供的另一种触控显示装置的结构示意图；
图3为本公开实施例提供的又一种触控显示装置的结构示意图；
图4为本公开实施例提供的又一种触控显示装置的结构示意图；
图5为本公开实施例提供的又一种触控显示装置的结构示意图；
图6为本公开实施例提供的又一种触控显示装置的结构示意图；
图7为本公开实施例提供的又一种触控显示装置的结构示意图；
图8为本公开实施例提供的一种网格状电极的结构示意图；
图9为本公开实施例提供的另一种网格状电极的结构示意图；
图10为本公开实施例提供的又一种网格状电极的结构示意图；
图11为本公开实施例提供的又一种触控显示装置的结构示意图；
图12为本公开实施例提供的又一种触控显示装置的结构示意图；
图13为本公开实施例提供的一种触控显示装置的制备方法的流程示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。并且在不冲突的情况下，本公开中的实施例及实施例中的特征可以相互组合。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
需要注意的是，附图中各图形的尺寸和形状不反映真实比例，目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元 件或具有相同或类似功能的元件。
本公开实施例提供了本公开实施例提供的一种触控显示面板，如图1所示，触控显示面板包括：
第一衬底基板1，包括多个子像素区2；
多个发光器件3，位于第一衬底基板1的一侧，与子像素区2一一对应；
第一像素定义层4，位于发光器件3背离第一衬底基板1的一侧，包括与子像素区2一一对应的第一开口区5；
多个量子点层6，位于发光器件3背离第一衬底基板1的一侧，且位于至少部分第一开口区5内；
触控模组7，位于量子点层6背离发光器件3一侧，包括第一触控电极层M1；
至少一层堆叠绝缘结构8，位于量子点层6与第一触控电极层M1之间，用于透过各量子点层6出射的光且反射发光器件3出射的光；堆叠绝缘结构8包括：第一折射率层9和整层设置的第二折射率层10；第一折射率层9的折射率小于第二折射率层10的折射率；第二折射率层10位于第一折射率层9与量子点层6之间；第一折射率层9包括多个第一折射率图案18，第一折射率图案18与量子点层6一一对应；第一折射率图案18在第一衬底基板1的正投影至少覆盖量子点层6在第一衬底基板1的正投影。
需要说明的是，本公开实施例提供的显示面板，量子点层用于吸收发光器件发出的光以辐射出所需颜色的光。具体的，量子点层辐射出的光的颜色与该量子点层对应的子像素区颜色相同。
本公开实施例提供的显示面板，包括至少一层堆叠绝缘结构，堆叠绝缘结构包括在量子点层背离发光器件一侧叠层设置的折射率不同的第二折射率层和第一折射率层，第二折射率层的折射率大于第一折射率层。光在第二折射率层和第一折射率层之间的界面处发生干涉，使得特定波长范围内的光反射率增大或者透过率增大。从而可以通过对第一折射率层和第二折射率层的折射率进行设置，使得各量子点层出射的光从堆叠绝缘结构出射，且发光器 件出射的光被反射而再次被量子点层利用，从而可以提高光利用率以及转换率、提升触控显示面板正面出光效率。还可以降低发光器件出射的光的泄露，提高显示面板的色纯度。在降低发光器件出射的光的泄露以及提高显示面板的色纯度的情况下，本公开实施例提供的触控显示装置，在量子点层的出光侧无需设置彩膜，可以减小触控显示面板的厚度，还可以节省成本。并且，本公开实施例提供的显示面板，触控模组位于量子点层背离发光器件的一侧，从而可以增大触控模组与发光器件之间的距离，避免触控模组中的触控电极层与发光器件的阴极之间产生寄生电容，可以提高触控准确度。
需要说明的是，图1中以触控显示面板中仅设置一层堆叠绝缘结构为例进行举例说明。在具体实施时，也可以是多层堆叠绝缘结构堆叠设置，多层第一反射机构堆叠同样能实现透过各量子点层出射的光且反射发光器件出射的光。
在一些实施例中，如图1所示，触控模组7还包括：位于量子点层6与第一触控电极层M1之间的第一缓冲层19，位于第一触控电极层M1与第一缓冲层19之间的第二触控电极层M2，位于第一触控电极层M1和第二触控电极层M2之间的第一绝缘层20；
第二折射率层10位于第一缓冲层19与第二触控电极层M2之间；
第一绝缘层20包括与量子点层6一一对应的第二开口区27，第一折射率图案18位于第二开口区27内。
即本公开实施例提供的触控显示面板，堆叠绝缘结构设置于触控模组内，并且，第一折射率图案位于第二开口区内，即第一折射率图案与第一绝缘层位于同一膜层。在设置堆叠绝缘结构的情况下，将第一折射率图案与第一绝缘层位于同一膜层，可以避免过多增加触控模组的厚度，进而避免过多增加触控显示面板的厚度。
在一些实施例中，在垂直于第一衬底基板方向上，第一折射率图案的厚度等于第一绝缘层的厚度。这样可以降低第一折射率图案的制备难度。
在一些实施例中，如图1所示，触控模组7还包括位于第一触控电极层 背离第一衬底基板一侧的第一保护层21。
在一些实施例中，第一缓冲层的材料包括氮化硅(SiN x)。
在具体实施时，第一缓冲层的厚度大于等于0.2微米且小于等于0.4微米。
在一些实施例中，第二折射率层的材料包括氮氧化硅(SiNO x)。
在一些实施例中，当第二折射率层的材料包括SiNO x时，第二折射率层的折射率大于等于1.65且小于等于1.75。
在具体实施时，第一折射率图案的材料可以为无机材料。例如，第一折射率图案的材料包括氧化硅(SiO x)。
在一些实施例中，当第一折射率图案的材料包括SiO x时，第一折射率图案的折射率大于等于1.45且小于等于1.55。
当然，第一折射率图案的材料也可以包括氧化铝(Al 2O 3)、氟化镁(MgF 2)、氧化硼(B 2O 3)等。
或者，在具体实施时，第一折射率图案的材料可以为有机材料。例如，第一折射率图案的材料包括下列之一或其组合：丙烯酸树脂、聚氨基甲酸酯树脂、硅酮树脂、环氧树脂。
在一些实施例中，当第一折射率图案的材料包括下列之一或其组合：丙烯酸树脂、聚氨基甲酸酯树脂、硅酮树脂、环氧树脂，第一折射率图案的折射率大于等于1.30且小于等于1.50。
在一些实施例中，第二折射率层的厚度小于第一折射率图案的厚度。
在具体实施时，第二折射率层的厚度大于等于0.1微米且小于等于0.2微米。无论第一折射率图案的材料为无机材料还是有机材料，可以设置为第一折射率图案的厚度大于等于0.2微米且小于等于0.4微米。
在一些实施例中，如图2所示，堆叠绝缘结构8还包括：
第三折射率层28，位于第一折射率层9和第二折射率层10之间；第三折射率层28的折射率小于第二折射率层10的折射率，第三折射率层28的折射率与第一折射率层9的折射率不相等。
本公开实施例提供的显示装置，堆叠绝缘结构还包括位于第一折射率层 和第二折射率层之间第三折射率层，且第三折射率层的折射率小于第二折射率层的折射率，第三折射率层的折射率与第一折射率层的折射率不相等，光在第二折射率层和第三折射率层之间的界面以及第三折射率层和第一折射率层之间的界面处发生干涉，更容易实现使得特定波长范围内的光反射率增大或者透过率增大，从而更容易实现各量子点层出射的光从堆叠绝缘结构出射发光器件出射的光被反射，使得发光器件出射的更多的光被反射而再次被量子点层利用，可以进一步提高光利用率以及转换率、提升触控显示面板正面出光效率、提高触控显示面板的色纯度。
在一些实施例中，第三折射率层包括有机基质。
在一些实施例中，有机基质的材料包括下列之一或其组合：硅烷树脂、环氧树脂。
在一些实施例中，第三折射率图案的折射率大于等于1.45且小于等于1.60。
在一些实施例中，第三折射率层的折射率小于第一折射率层的折射率。
在一些实施例中，第三折射率层的折射率大于等于1.25且小于等于1.45。
在一些实施例中，第三折射率层还包括分散于有机基质的中空粒子。即本公开实施例提供的触控显示面板中第三折射率层由有机基质以及分散于有机基质的中空粒子组成，在有机基质中添加中空粒子可以降低整体膜层的折射率，更容易实现第三折射率层的折射率小于第二折射率层的折射率且第三折射率层的折射率与第一折射率层的折射率不相等。
在一些实施例中，中空粒子为核壳结构，壳的材料包括氧化硅，壳包裹的核的部分为空气。在具体实施时中空粒子在有机基质中的质量百分比大于等于40％且小于等于70％。
在具体实施时，第三折射率层的厚度大于等于0.1微米且小于等于0.2微米。
在一些实施例中，如图1、图2所示，量子点层6位于部分第一开口区5内；
触控显示面板还包括：多个第一填充层25，位于设置量子点层6之外的 第一开口区5内；
第一折射率层9在第一衬底基板1的正投影与第一填充层25在第一衬底基板1的正投影互不交叠。
即未设置量子点层的第一开口区通过第一填充层填充。在具体实施时，第一填充层为透光膜层，第一填充层对应的子像素颜色即为发光器件的发光颜色。
在一些实施例中，如图3、图4所示，触控显示面板还包括：第一透光结构29，位于第一填充层25与第一触控电极层M1之间，用于透过发光器件3发出的光；
第一透光结构29包括：第四折射率层31，位于第四折射率层31与第一填充层25之间的第五折射率层30；第四折射率层31的折射率与第五折射率层30的折射率不同；第五折射率层30包括与第一填充层25一一对应第二折射率图案32，第二折射率图案32在第一衬底基板1的正投影至少覆盖第一填充层25在第一衬底基板1的正投影，且第二折射率图案32在第一衬底基板1的正投影与量子点层6在第一衬底基板1的正投影互不交叠。
本公开实施例提供的触控显示装置，在第一填充层与第一触控电极层之间设置第一透光结构，且第一透光结构包括折射率不同的第四折射率层和第五折射率层，光在第四折射率层和第五折射率层之间的界面处发生干涉，对第四折射率层和第五折射率层的折射率进行调节，可以增大发光器件发出的光的透过率。
在一些实施例中，如图3、图4所示，当触控模组7包括第一缓冲层19时，第一缓冲层19复用为第四折射率层31。从而可以在设置增大发光器件发出的光的透过率的第一透光结构的同时，尽可能避免过多增加触控模组的厚度，进而避免过多增加触控显示面板的厚度。并且，第一缓冲层覆盖第二折射率图案，可以保证绝缘性以及水氧阻隔效果。
在一些实施例中，第五折射率层的材料为无机材料。无机材料例如为SiO x，SiO x的折射率大于等于1.45且小于等于1.55。当然，无机材料还可以为Al 2O 3、 MgF 2、B 2O 3等。
在一些实施例中，第五折射率层的厚度大于等于0.05微米且小于等于0.1微米。
在一些实施例中，如图1～图4所示，第二折射率层10在第一衬底基板1的正投影覆盖第一填充层25在第一衬底基板1的正投影。
在一些实施例中，如图2、图4所示，当触控显示面板还包括第三折射率层28时，第三折射率层28在第一衬底基板1的正投影覆盖第一填充层25在第一衬底基板的正投影。
即第二折射率层以及第三折射率层均可以延伸覆盖至第一填充层对应的区域，第二折射率层以及第三折射率层均可以整层设置。由于第一填充层对应的区域未设置第一折射率图案，因此在第一填充层对应的区域第二折射率层以及第三折射率层均不会对发光器件出射的光造成影响。
在一些实施例中，如图1至图4所示，多个子像素区2包括：多个红色子像素区R，多个蓝色子像素区B，以及多个绿色子像素区G。
在一些实施例中，多个发光器件均为蓝光发光器件；如图1至图4所示，量子点层6仅位于红色子像素区R以及绿色子像素区G对应的第一开口区5内。
具体的，如图1至图4所示，红色子像素区R对应的第一开口区5内设置有红光量子点层r，红光量子点层r吸收蓝光辐射红光；绿色子像素区G对应的第一开口区5内设置有绿光量子点层g，绿光量子点层g吸收蓝光辐射绿光。由于发光器件为蓝光发光器件，蓝色子像素区B无需设置量子点层也可以使得触控显示面板实现全彩显示。
在具体实施时，量子点层的材料包括核壳量子点结构；核壳量子点结构中核材料例如可为硒化镉(CdSe)、磷化铟(InP)，核壳量子点结构中壳材料例如可为硫化锌(ZnS)。
具体实施时，如图1至图4所示，第一填充结构25位于蓝色子像素区B对应的第一开口区5内。
在具体实施时，第一填充结构以及第一像素定义层均可包括树脂类材料。第一像素定义层包括遮光树脂类材料，填充结构包括透光树脂类材料。
在一些实施例中，如图1～图4所示，第一触控电极层M1、第二触控电极层M2在第一衬底基板1的正投影与第一开口区5在第一衬底基板1的正投影互不交叠。
从而第一触控电极层M1、第二触控电极层M2不会影响子像素的出光，避免影响触控显示基板的正常显示。
在一些实施例中，第一触控电极层以及第二触控电极层包括多个触控电极。在具体实施时，如图5、图6、图7所示，触控电极包括相互交叉的多个触控感应电极RX和多个触控驱动电极TX；每一触控感应电极RX包括：多个触控感应子电极36，以及连接相邻触控感应子电极36的连接部35；每一触控驱动电极TX包括：多个触控驱动子电极33，以及连接相邻触控驱动子电极33的桥接电极34。在具体实施时，触控感应子电极36以及连接部35一体连接，且触控感应子电极36、连接部35以及触控驱动子电极33同层设置。
在一些实施例中，图5中，触控感应电极RX沿第一方向X延伸，触控驱动电极TX沿第二方向Y延伸，第一方向X与第二方向Y相交，例如第一方向X与第二方向Y垂直。当然，在具体实施时，触控感应电极RX与触控驱动电极TX的位置可以互换。
需要说明的是，图5中以触控感应子电极和触控驱动子电极的轮廓为菱形块电极为例进行举例说明。在具体实施时，为了实现第一触控电极层、第二触控电极层在第一衬底基板的正投影与第一开口区在第一衬底基板的正投影互不交叠，如图8～图10所示，触控驱动电极和触控感应电极均为网格状电极37。
在一些实施例中，触控显示面板的触控区与显示区重合，当触控驱动电极和触控感应电极均为网格状电极37时，如图8～图10所示，网格状电极37包括多个孔洞38，例如，孔洞38在第一衬底基板的正投影与子像素2在第一衬底基板的正投影一一对应。在一些实施例中，第一开口区在第一衬底 基板的正投影落入孔洞38在第一衬底基板的正投影内。如此，可以避免触控驱动电极以及触控感应电极对子像素的出光产生影响，避免影响触控显示基板的正常显示。
需要说明的是，图8～图10分别示出了子像素排列方式。图8～图10中，仅示出一个像素对应的区域，即一个像素包括3个子像素，3个子像素分别为红色子像素R、绿色子像素G以及蓝色子像素B。红色子像素R发光区的面积大于绿色子像素G发光区的面积，绿色子像素G发光区的面积大于蓝色子像素B发光区的面积。图8、图10中，红色子像素R、绿色子像素G以及蓝色子像素B呈矩形排列，图9中红色子像素R、绿色子像素G以及蓝色子像素B呈三角形排列。图8中，红色子像素R发光区、绿色子像素G发光区以及蓝色子像素B发光区的形状均为四边形，孔洞38的形状为四边形。图9中，红色子像素R发光区、绿色子像素G发光区以及蓝色子像素B发光区的形状为八边形，相应的，孔洞38的形状为八边形。图10中，红色子像素R发光区、绿色子像素G发光区以及蓝色子像素B发光区的形状为四边形，孔洞38的形状近似为四边形，例如孔洞38的形状为具有曲线边的四边形。在具体实施时，图8、图9中，网格电极的网格为直线形，图10中网格电极的网格为曲线形。
在具体实施时，第一触控电极层、第二触控电极层的材料包括钛/铝/钛叠层；第一保护层的材料包括聚酰亚胺(PI)。
在具体实施时，钛/铝/钛叠层中，钛的厚度例如大于等于30纳米(nm)且小于等于50nm，铝的厚度例如大于等于100nm且小于等于300nm。第一绝缘层的厚度例如大于等于0.2微米且小于等于0.4微米。第一保护层的厚度例如大于等于1微米且小于等于2微米。
在一些实施例中，发光器件为电致发光器件。电致发光器件例如为有机发光二极管器件。或者，电致发光器件也可以为Micro LED、Mini LED等其它发光器件。
接下来以发光器件为OLED为例进行举例说明。
在一些实施例中，如图1～图4所示，触控显示面板还包括：位于第一衬底基板1与发光器件3之间的驱动电路层22，位于驱动电路层22与第一像素定义层4之间的第二像素定义层23，发光器件3与第一像素定义层4之间的封装层14以及位于第一像素定义层4与第一缓冲层19之间的第一平坦化层26。第二像素定义层23包括与子像素区2一一对应的第三开口区24；发光器件3包括在第三开口区24依次叠层设置的阳极11、发光功能层12、阴极13，其中，阳极11位于第二像素定义层23与驱动电路层22之间，第二像素定义层23覆盖阳极11的边缘，多个子像素区2对应的阴极13一体连接。在一些实施例中，显示面板还可包括位于阴极与封装层之间的取光层。
在具体实施时，驱动电路层包括多个阵列排布的像素驱动电路；像素驱动电路用于驱动发光器件发光；如图11所示，像素驱动电路包括薄膜晶体管TFT以及存储电容(未示出)；薄膜晶体管TFT包括：有源层122、栅极G、源极S和漏极D；图11中以薄膜晶体管TFT为顶栅结构为例进行举例说明，当然薄膜晶体管TFT也可以为底栅或其他结构。如图11所示，显示基板还包括：位于第一衬底基板1与有源层39之间的第二缓冲层40；驱动电路层22还包括：位于有源层39和栅极G之间的第一栅绝缘层41、位于第一栅绝缘层41与源极S和漏极D之间的层间绝缘层42，以及位于发光器件3与源极S和漏极D之间的第二平坦化层38。阳极11通过贯穿第二平坦化层38的过孔与漏极D连接。
在具体实施时，发光功能层包括有机发光层，还可包括电子注入层、电子传输层、空穴传输层、空穴注入层等。
在具体实施时，当发光器件均为蓝光发光器件时，各子像素区对应的有机发光层均发蓝光，但各子像素区对应的有机发光层的发光光谱可以相同也可以不相同。
在一些实施例中，如图1～图4所示，封装层14包括：叠层设置的第一无机封装膜15、有机封装膜16、第二无机封装膜17。
需要说明的是，图1～图4以在封装层14上直接制备量子点层以及第一 像素定义层为例进行说明。在具体实施时，如图12所示，可以单独制作包括发光器件3的显示基板43以及单独制作包括量子点层6和第一像素定义层4的色转基板44，再将显示基板与色转基板通过对盒工艺贴合。如图12所示，色转基板44还包括第二衬底基板45以及封盖层46；第二衬底基板45位于量子点层6背离封装层14一侧，封盖层46位于量子点层6与封装层14之间。触控显示装置还包括位于显示基板43与色转基板44之间的粘结层47。在具体实施时，对于显示基板与色转基板通过对盒工艺贴合的方案，第一缓冲层19位于第二衬底基板45背离量子点层6的一侧。
接下来，以多个发光器件均为蓝光发光器件且量子点层仅位于红色子像素区以及绿色子像素区对应的第一开口区内为例，如表一所示，对触控显示面板a、b、c、d、e的模拟结果进行介绍。其中，触控显示面板a为不包括堆叠绝缘结构和第一透光结构的面板，即触控模组仅包括依次堆叠设置的第一缓冲层、第二触控电极层、第一绝缘层、第一触控电极层以及第一保护层；触控显示面板b的结构如图1所示，触控显示面板c、d的结构如图2所示，触控显示面板e的结构如图4所示。触控显示面板b、c、d、e中，第一缓冲层的材料为SiN x，SiN x的厚度大于等于0.2微米且小于等于0.4微米，第一折射率层的材料为SiO x，SiO x的折射率大于等于1.45且小于等于1.55，SiO x的厚度大于等于0.2微米且小于等于0.4微米，第二折射率层的材料为SiNO x，SiNO x的折射率大于等于1.65且小于等于1.75，SiNO x的厚度大于等于0.1微米且小于等于0.2微米；触控显示面板b、c中，第三折射率层包括的有机基质的材料为硅烷树脂或环氧树脂；触控显示面板b中第三折射率层的折射率大于等于1.45且小于等于1.60；触控显示面板c中第三折射率层的折射率大于等于1.25且小于等于1.45；触控显示面板e中，第五折射率层的材料为SiO x，SiO x的折射率大于等于1.45且小于等于1.55，SiO x的厚度大于等于0.05微米且小于等于0.1微米。表一中Rx、Ry、Gx、Gy、Bx、By代表色坐标，R_Eff、G_Eff、B_Eff、W_Eff代表光效，根据表一可以得出，由于本公开实施例设置了堆叠绝缘结构，可以将未被利用的蓝光反射再次激发量子点层发光，因此 相比于未设置堆叠绝缘结构的触控显示面板a，本公开实施例提供的触控显示面板b、c、d、e的色纯度及色域均有较大提升，并且未被利用的蓝光反射再次激发量子点层发光使得量子点层的转换率提高，因此R_Eff、G_Eff、W_Eff光效均有所提升。本公开实施例提供的触控显示面板b、c、d、e的色域逐渐提高。此外，由于触控显示面板e还设置了提高蓝光透过率的第一透光结构，从而可以提高蓝光光效B_Eff。
表一
Figure PCTCN2022102950-appb-000001
基于同一发明构思，本公开实施例还提供了一种触控显示面板的制备方法，如图13所示，包括：
S101、提供第一衬底基板；第一衬底基板包括多个子像素区；
S102、在第一衬底基板的一侧形成多个发光器件；发光器件与子像素区一一对应；
S103、在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层；第一像素定义层包括与子像素区一一对应的第一开口区，量子点层位于至少部分第一开口区内；
S104、在量子点层背离发光器件一侧形成堆叠绝缘结构；堆叠绝缘结构包括至少一组堆叠设置的第一折射率层和整层设置的第二折射率层；第一折射率层的折射率小于第二折射率层的折射率；第二折射率层位于第一折射率层与量子点层之间；第一折射率层包括第一折射率图案与量子点层一一对应；第一折射率图案在第一衬底基板的正投影至少覆盖量子点层在第一衬底基板的正投影；
S105、在堆叠绝缘结构背离量子点层一侧形成第一触控电极层。
本公开实施例提供的触控显示面板的其制备方法，在量子点层背离发光器件层一侧形成至少一层堆叠绝缘结构，堆叠绝缘结构包括在量子点层背离发光器件一侧叠层设置的折射率不同的第二折射率层和第一折射率层，第二折射率层的折射率大于第一折射率层。光在第二折射率层和第一折射率层之间的界面处发生干涉，使得特定波长范围内的光反射率增大或者透过率增大。从而可以通过对第一折射率层和第二折射率层的折射率进行设置，使得各量子点层出射的光从堆叠绝缘结构出射，且发光器件出射的光被反射而再次被量子点层利用，从而可以提高光利用率以及转换率、提升触控显示面板正面出光效率。还可以降低发光器件出射的光的泄露，提高显示面板的色纯度。在降低发光器件出射的光的泄露以及提高显示面板的色纯度的情况下，在量子点层的出光侧无需形成彩膜，可以减小触控显示面板的厚度，还可以节省工艺流程、节省成本。并且，由于触控模组位于量子点层背离发光器件的一侧，从而可以增大触控模组与发光器件之间的距离，避免触控模组中的触控电极层与发光器件的阴极之间产生寄生电容，可以提高触控准确度。
在一些实施例中，在第一衬底基板的一侧形成多个发光器件之前，还包括：
在第一衬底基板一侧依次形成第二缓冲层、有源层、第一栅绝缘层、栅极、层间绝缘层、源极和漏极、第二平坦化层的图案；
在第一衬底基板的一侧形成多个发光器件，具体包括：
在第二平坦化层背离第一衬底基板的一侧形成多个阳极的图案；
在阳极背离第二平坦化层一侧形成第二像素定义层，并对第二像素定义层进行图形化工艺形成与阳极一一对应的第三开口区；所述第三开口区露出阳极；
在所述第三开口区形成发光功能层的图案；
在所述发光功能层背离所述阳极的一侧形成阴极；
在第一衬底基板的一侧形成多个发光器件之后，还包括：
在阴极背离发光功能层一侧依次形成第一无机封装膜、有机封装膜、第二无机封装膜。
在一些实施例中，在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层，具体包括：
在第二无机封装膜背离有机封装膜一侧形成第一像素定义层，对第一像素定义层进行图形化工艺形成多个第一开口区；
在至少部分第一开口区内形成量子点层。
在一些实施例中，在至少部分第一开口区内形成量子点层之后，还包括：
形成覆盖量子点层和第一像素定义层的第一平坦化层。
或者，在一些实施例中，在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层，具体包括：
提供第二衬底基板，并在第二衬底基板一侧形成第一像素定义层，对第一像素定义层进行图形化工艺形成多个第一开口区；
在至少部分第一开口区内形成量子点层；
形成覆盖量子点层和第一像素定义层的封盖层，获得色转基板；
采用对盒工艺将色转基板与包括发光器件的显示基板贴合。
具体的，例如通过粘结层粘结封盖层以及封装层，实现色转基板与包括发光器件的显示基板贴合。
在一些实施例中，在量子点层背离发光器件一侧形成堆叠绝缘结构之前，方法还包括：
在量子点层背离发光器件一侧形成第一缓冲层；
在量子点层背离发光器件一侧形成堆叠绝缘结构，具体包括：
在第一缓冲层背离量子点层一侧形成第二折射率层；
在第二折射率层背离第一缓冲层一侧形成第二触控电极层的图案；
在第二触控电极层的图案背离第二折射率层一侧形成第一绝缘层，并对第一绝缘层采用图形化工艺，形成与量子点层一一对应的第二开口区；
在第二开口区内形成第一折射率图案。
在具体实施时，例如，采用等离子体增强化学的气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)工艺沉积SiN x，形成第一缓冲层。
在具体实施时，例如，采用PECVD工艺沉积SiNO x，形成第二折射率层。
在具体实施时，例如，形成第二触控电极层的图案、第二触控电极层的图案，均可以采用溅射工艺依次形成钛/铝/钛。
在具体实施时，例如，采用PECVD工艺沉积SiN x，形成第一绝缘层，再对第一绝缘层采用曝光、显影、刻蚀等图形化工艺形成第二开口区。
在具体实施时，当第一折射率图案包括的材料为无机材料时，例如，可以采用PECVD工艺结合金属掩膜版技术，在第二开口区内形成第一折射率图案；当第一折射率图案包括的材料为有机材料时，例如，可以采用喷墨打印工艺结合金属掩膜版技术，在第二开口区内形成第一折射率图案。
在一些实施例中，在堆叠绝缘结构背离量子点层一侧形成第一触控电极层之后，还包括：
在第一触控电极层背离第一衬底基板一侧形成第一保护层。
在一些实施例中，在第二折射率层背离第一缓冲层一侧形成第一触控电极层的图案之前，还包括：
在第二折射率层背离第一缓冲层一侧形成第三折射率层；第三折射率层的折射率小于第二折射率层的折射率。
在具体实施时，例如，在第二折射率层背离第一缓冲层一侧采用旋涂有机材料，形成第三折射率层。有机材料可为硅烷树脂、环氧树脂等。还可以 在有机材料中掺杂中空粒子，旋涂掺杂中空粒子的有机材料形成第三折射率层。
在一些实施例中，量子点层位于部分第一开口区内；在发光器件背离第一衬底基板的一侧形成第一像素定义层和多个量子点层之后，还包括：
在量子点层之外的第一开口区内形成第一填充层；第一折射率层在第一衬底基板的正投影与第一填充层在第一衬底基板的正投影互不交叠。
在一些实施例中，在量子点层之外的第一开口区内形成第一填充层之后，还包括：
在第一填充层背离发光器件一侧形成第五折射率层；第一缓冲层的折射率与第五折射率层的折射率不同；第五折射率层包括与第一填充层一一对应第二折射率图案，第二折射率图案在第一衬底基板的正投影至少覆盖第一填充层在第一衬底基板的正投影，且第二折射率图案在第一衬底基板的正投影与量子点层在第一衬底基板的正投影互不交叠。
在具体实施时，可以采用PECVD工艺结合金属掩膜版技术，在量子点层之外的第一开口区对应的区域形成第二折射率图案。
本公开实施例提供的一种显示装置，包括本公开实施例提供的触控显示面板。
本公开实施例提供的显示装置为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。该显示装置的实施可以参见上述触控显示面板的实施例，重复之处不再赘述。
综上所述，本公开实施例提供的触控显示面板及其制备方法、显示装置。触控显示面板包括至少一层堆叠绝缘结构，堆叠绝缘结构包括在量子点层背离发光器件一侧叠层设置的折射率不同的第二折射率层和第一折射率层，第二折射率层的折射率大于第一折射率层。光在第二折射率层和第一折射率层之间的界面处发生干涉，使得特定波长范围内的光反射率增大或者透过率增 大。从而可以通过对第一折射率层和第二折射率层的折射率进行设置，使得各量子点层出射的光从堆叠绝缘结构出射，且发光器件出射的光被反射而再次被量子点层利用，从而可以提高光利用率以及转换率、提升触控显示面板正面出光效率。还可以降低发光器件出射的光的泄露，提高显示面板的色纯度。在降低发光器件出射的光的泄露以及提高显示面板的色纯度的情况下，本公开实施例提供的触控显示装置，在量子点层的出光侧无需设置彩膜，可以减小触控显示面板的厚度，还可以节省成本。并且，本公开实施例提供的显示面板，触控模组位于量子点层背离发光器件的一侧，从而可以增大触控模组与发光器件之间的距离，避免触控模组中的触控电极层与发光器件的阴极之间产生寄生电容，可以提高触控准确度。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明实施例的精神和范围。这样，倘若本发明实施例的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (29)

  1. 一种触控显示面板，其中，所述触控显示面板包括：
    第一衬底基板，包括多个子像素区；
    多个发光器件，位于所述第一衬底基板的一侧，与所述子像素区一一对应；
    第一像素定义层，位于所述发光器件背离所述第一衬底基板的一侧，包括与所述子像素区一一对应的第一开口区；
    多个量子点层，位于所述发光器件背离所述第一衬底基板的一侧，且位于至少部分所述第一开口区内；
    触控模组，位于所述量子点层背离所述发光器件一侧，包括第一触控电极层；
    堆叠绝缘结构，位于所述量子点层与所述第一触控电极层之间，所述堆叠绝缘结构包括：第一折射率层和整层设置的第二折射率层；所述第一折射率层的折射率小于所述第二折射率层的折射率；所述第二折射率层位于所述第一折射率层与所述量子点层之间；所述第一折射率层包括多个第一折射率图案，所述第一折射率图案与所述量子点层一一对应；所述第一折射率图案在所述第一衬底基板的正投影至少覆盖所述量子点层在所述第一衬底基板的正投影。
  2. 根据权利要求1所述的触控显示面板，其中，所述触控模组还包括：位于所述量子点层与所述第一触控电极层之间的第一缓冲层，位于所述第一触控电极层与所述第一缓冲层之间的第二触控电极层，以及位于所述第一触控电极层和所述第二触控电极层之间的第一绝缘层；
    所述第二折射率层位于所述第一缓冲层与所述第二触控电极层之间；
    所述第一绝缘层包括与所述量子点层一一对应的第二开口区，所述第一折射率图案位于所述第二开口区内。
  3. 根据权利要求2所述的触控显示面板，其中，在垂直于所述第一衬底 基板方向上，所述第一折射率图案的厚度等于所述第一绝缘层的厚度。
  4. 根据权利要求1～3任一项所述的触控显示面板，其中，所述第一折射率图案的材料包括氧化硅。
  5. 根据权利要求4所述的触控显示面板，其中，所述第一折射率图案的折射率大于等于1.45且小于等于1.55。
  6. 根据权利要求1～3任一项所述的触控显示面板，其中，所述第一折射率图案的材料包括下列之一或其组合：丙烯酸树脂、聚氨基甲酸酯树脂、硅酮树脂、环氧树脂。
  7. 根据权利要求6所述的触控显示面板，其中，所述第一折射率图案的折射率大于等于1.30且小于等于1.50。
  8. 根据权利要求1～7任一项所述的触控显示面板，其中，所述第二折射率层的材料包括氮氧化硅。
  9. 根据权利要求8所述的触控显示面板，其中，所述第二折射率层的折射率大于等于1.65且小于等于1.75。
  10. 根据权利要求1～9任一项所述的触控显示面板，其中，所述堆叠绝缘结构还包括：
    第三折射率层，位于所述第一折射率层和所述第二折射率层之间；所述第三折射率层的折射率小于所述第二折射率层的折射率，且所述第三折射率层的折射率与所述第一折射率层的折射率不相同。
  11. 根据权利要求10所述的触控显示面板，其中，所述第三折射率层包括有机基质。
  12. 根据权利要求11所述的触控显示面板，其中，所述有机基质的材料包括下列之一或其组合：硅烷树脂、环氧树脂。
  13. 根据权利要求12所述的触控显示面板，其中，所述第三折射率图案的折射率大于等于1.45且小于等于1.60。
  14. 根据权利要求12所述的触控显示面板，其中，所述第三折射率层的折射率小于所述第一折射率层的折射率。
  15. 根据权利要求14所述的触控显示面板，其中，所述第三折射率层的折射率大于等于1.25且小于等于1.45。
  16. 根据权利要求11～15任一项所述的触控显示面板，其中，所述第三折射率层还包括分散于所述有机基质的中空粒子。
  17. 根据权利要求1～16任一项所述的触控显示面板，其中，所述量子点层位于部分所述第一开口区内；
    所述触控显示面板还包括：多个第一填充层，位于设置所述量子点层之外的所述第一开口区内；
    所述第一折射率层在所述第一衬底基板的正投影与所述第一填充层在所述第一衬底基板的正投影互不交叠。
  18. 根据权利要求17所述的触控显示面板，其中，所述触控显示面板还包括：第一透光结构，位于所述第一填充层与所述触控电极层之间，用于透过所述发光器件发出的光；
    所述第一透光结构包括：第四折射率层，位于所述第四折射率层与所述第一填充层之间的第五折射率层；所述第四折射率层的折射率与所述第五折射率层的折射率不同；所述第五折射率层包括与所述第一填充层一一对应第二折射率图案，所述第二折射率图案在所述第一衬底基板的正投影至少覆盖所述第一填充层在所述第一衬底基板的正投影，且所述第二折射率图案在所述第一衬底基板的正投影与所述量子点层在所述第一衬底基板的正投影互不交叠。
  19. 根据权利要求18所述的触控显示面板，其中，所述触控模组包括第一缓冲层，所述第一缓冲层复用为所述第四折射率层。
  20. 根据权利要求19所述的触控显示面板，其中，所述第二折射率层在所述第一衬底基板的正投影覆盖所述第一填充层在所述第一衬底基板的正投影。
  21. 根据权利要求20所述的触控显示面板，其中，所述触控显示面板还包括第三折射率层，所述第三折射率层在所述第一衬底基板的正投影覆盖所 述第一填充层在所述第一衬底基板的正投影。
  22. 根据权利要求17～21任一项所述的触控显示面板，其中，所述多个发光器件为蓝光发光器件；所述多个子像素区包括：多个红色子像素区，多个蓝色子像素区，以及多个绿色子像素区；
    所述量子点层仅位于所述红色子像素区以及所述绿色子像素区对应的所述第一开口区内。
  23. 根据权利要求1～22任一项所述的触控显示面板，其中，所述触控模组包括所述第一触控电极层和第二触控电极层；所述第一触控电极层在所述第一衬底基板的正投影与所述第一开口区在所述第一衬底基板的正投影互不交叠，且所述第二触控电极层在所述第一衬底基板的正投影与所述第一开口区在所述第一衬底基板的正投影互不交叠。
  24. 一种触控显示面板的制备方法，其中，所述方法包括：
    提供第一衬底基板；所述第一衬底基板包括多个子像素区；
    在所述第一衬底基板的一侧形成多个发光器件；所述发光器件与所述子像素区一一对应；
    在所述发光器件背离所述第一衬底基板的一侧形成第一像素定义层和多个量子点层；所述第一像素定义层包括与所述子像素区一一对应的第一开口区，所述量子点层位于至少部分所述第一开口区内；
    在所述量子点层背离所述发光器件一侧形成至少一层堆叠绝缘结构；所述堆叠绝缘结构包括至少一组堆叠设置的第一折射率层和整层设置的第二折射率层；所述第一折射率层的折射率小于所述第二折射率层的折射率；所述第二折射率层位于所述第一折射率层与所述量子点层之间；所述一折射率层包括多个第一折射率图案，所述第一折射率图案与所述量子点层一一对应；所述第一折射率图案在所述第一衬底基板的正投影至少覆盖所述量子点层在所述第一衬底基板的正投影；
    在所述堆叠绝缘结构背离所述量子点层一侧形成第一触控电极层。
  25. 根据权利要求24所述的方法，其中，在所述量子点层背离所述发光 器件一侧形成堆叠绝缘结构之前，所述方法还包括：
    在所述量子点层背离所述发光器件一侧形成第一缓冲层；
    在所述量子点层背离所述发光器件一侧形成堆叠绝缘结构，具体包括：
    在所述第一缓冲层背离所述量子点层一侧形成所述第二折射率层；
    在所述第二折射率层背离所述第一缓冲层一侧形成第一触控电极层的图案；
    在所述第一触控电极层的图案背离所述第二折射率层一侧形成第一绝缘层，并对所述第一绝缘层采用图形化工艺，形成与所述量子点层一一对应的第二开口区；
    在所述第二开口区内形成所述第一折射率图案。
  26. 根据权利要求25所述的方法，其中，在所述第二折射率层背离所述第一缓冲层一侧形成第一触控电极层的图案之前，还包括：
    在所述第二折射率层背离所述第一缓冲层一侧形成第三折射率层；所述第三折射率层的折射率小于所述第二折射率层的折射率。
  27. 根据权利要求25～26任一项所述的方法，其中，所述量子点层位于部分所述第一开口区内；在所述发光器件背离所述第一衬底基板的一侧形成第一像素定义层和多个量子点层之后，还包括：
    在所述量子点层之外的所述第一开口区内形成第一填充层；所述第一折射率层在所述第一衬底基板的正投影与所述第一填充层在所述第一衬底基板的正投影互不交叠。
  28. 根据权利要求27所述的方法，其中，在所述量子点层之外的所述第一开口区内形成第一填充层之后，还包括：
    在所述第一填充层背离所述发光器件一侧形成第五折射率层；所述第一缓冲层的折射率与所述第五折射率层的折射率不同；所述第五折射率层包括与所述第一填充层一一对应第二折射率图案，所述第二折射率图案在所述第一衬底基板的正投影至少覆盖所述第一填充层在所述第一衬底基板的正投影，且所述第二折射率图案在所述第一衬底基板的正投影与所述量子点层在所述 第一衬底基板的正投影互不交叠。
  29. 一种显示装置，其中，包括根据权利要求1～23任一项所述的触控显示面板。
PCT/CN2022/102950 2022-06-30 2022-06-30 触控显示面板及其制备方法、显示装置 WO2024000454A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202280002064.8A CN117642788A (zh) 2022-06-30 2022-06-30 触控显示面板及其制备方法、显示装置
PCT/CN2022/102950 WO2024000454A1 (zh) 2022-06-30 2022-06-30 触控显示面板及其制备方法、显示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2022/102950 WO2024000454A1 (zh) 2022-06-30 2022-06-30 触控显示面板及其制备方法、显示装置

Publications (1)

Publication Number Publication Date
WO2024000454A1 true WO2024000454A1 (zh) 2024-01-04

Family

ID=89383830

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/102950 WO2024000454A1 (zh) 2022-06-30 2022-06-30 触控显示面板及其制备方法、显示装置

Country Status (2)

Country Link
CN (1) CN117642788A (zh)
WO (1) WO2024000454A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190013362A1 (en) * 2016-12-29 2019-01-10 Boe Technology Group Co., Ltd. Display substrate and manufacture method thereof, display panel
CN110491901A (zh) * 2018-05-14 2019-11-22 三星显示有限公司 包括颜色转换面板的有机发光二极管显示器
CN112993131A (zh) * 2019-12-17 2021-06-18 群创光电股份有限公司 显示装置的制造方法
CN113725385A (zh) * 2021-09-01 2021-11-30 湖北长江新型显示产业创新中心有限公司 一种显示面板及显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190013362A1 (en) * 2016-12-29 2019-01-10 Boe Technology Group Co., Ltd. Display substrate and manufacture method thereof, display panel
CN110491901A (zh) * 2018-05-14 2019-11-22 三星显示有限公司 包括颜色转换面板的有机发光二极管显示器
CN112993131A (zh) * 2019-12-17 2021-06-18 群创光电股份有限公司 显示装置的制造方法
CN113725385A (zh) * 2021-09-01 2021-11-30 湖北长江新型显示产业创新中心有限公司 一种显示面板及显示装置

Also Published As

Publication number Publication date
CN117642788A (zh) 2024-03-01

Similar Documents

Publication Publication Date Title
CN111505866B (zh) 显示装置及其制作方法
US11818906B2 (en) Display device with reduced reflection
CN110911463B (zh) Oled显示背板及其制作方法和oled显示装置
EP3211683A1 (en) Top emission oled device and manufacturing method thereof, and display device
WO2021196995A1 (zh) 显示装置、显示装置的盖板的制作方法
JP2020521990A (ja) カラーフィルム基板及びその製造方法、表示パネルと表示装置
KR20130095215A (ko) 표시 장치, 표시 장치의 제조 방법 및 전자 장치
CN103258838B (zh) 显示设备及用于制造显示设备的方法
CN111430445B (zh) 一种显示基板及其制备方法、显示装置
JPWO2010150535A1 (ja) 多色発光有機ｅｌ表示装置およびその製造方法
US11917894B2 (en) Method for preparing organic electroluminescent device, and organic electroluminescent device and display apparatus
EP4376573A1 (en) Display panel and display apparatus
CN111403462B (zh) 显示基板及其制作方法、显示面板和显示装置
WO2022111076A1 (zh) 显示基板及其制造方法和显示装置
CN110320702B (zh) 基板及其制备方法、显示面板
WO2015172450A1 (zh) 一种像素单元及其制作方法、显示装置
WO2022247180A1 (zh) 显示面板及显示装置
CN114846615B (zh) 显示面板及显示装置
KR20210064559A (ko) 발광 표시 장치
KR102052432B1 (ko) 유기전계발광소자 및 그 제조방법
WO2024032395A1 (zh) 显示面板及其制备方法、显示装置
WO2024000454A1 (zh) 触控显示面板及其制备方法、显示装置
CN108511623B (zh) 光取出结构、显示屏体及其制作方法、显示装置
KR20220007788A (ko) 표시 장치 및 표시 장치의 제조 방법
WO2023201637A1 (zh) 显示面板及显示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 202280002064.8

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 18044755

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22948557

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2022948557

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2022948557

Country of ref document: EP

Effective date: 20240517