WO2023286555A1 - 表面改質剤、積層体、金属配線パターンの形成方法、及びプリント配線板の製造方法 - Google Patents

表面改質剤、積層体、金属配線パターンの形成方法、及びプリント配線板の製造方法 Download PDF

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WO2023286555A1
WO2023286555A1 PCT/JP2022/025011 JP2022025011W WO2023286555A1 WO 2023286555 A1 WO2023286555 A1 WO 2023286555A1 JP 2022025011 W JP2022025011 W JP 2022025011W WO 2023286555 A1 WO2023286555 A1 WO 2023286555A1
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Prior art keywords
group
layer
metal
wiring pattern
nitrogen
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PCT/JP2022/025011
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English (en)
French (fr)
Japanese (ja)
Inventor
浩了 有田
淳 原
哲也 山田
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コニカミノルタ株式会社
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Application filed by コニカミノルタ株式会社 filed Critical コニカミノルタ株式会社
Priority to CN202280044549.3A priority Critical patent/CN117546615A/zh
Priority to JP2023535202A priority patent/JPWO2023286555A1/ja
Priority to KR1020237045158A priority patent/KR20240014516A/ko
Publication of WO2023286555A1 publication Critical patent/WO2023286555A1/ja

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Definitions

  • the present invention relates to a surface modifier, a laminate, a method for forming a metal wiring pattern, and a method for manufacturing a printed wiring board. More particularly, the present invention relates to a surface modifier and the like that achieve both etching properties and resist material stripping properties.
  • Patent Document 1 discloses a technique of forming a molecular bonding layer between the resist layer and the metal layer.
  • Patent Document 2 discloses a surface treatment agent capable of firmly adhering a dry film resist or the like.
  • the present invention has been made in view of the above problems and situations, and the problem to be solved is a surface modifier that achieves both etchability and peelability of a resist material, and a laminate using the surface modifier,
  • An object of the present invention is to provide a method for forming a metal wiring pattern and a method for manufacturing a printed wiring board.
  • the present inventors have investigated the causes of the above problems and found that a nitrogen-containing heteroaromatic ring compound having a specific structure and a ClogP within the range of 2 to 5 is contained.
  • the present inventors have found that it is possible to provide a surface modifier or the like that achieves both etchability and resist material releasability, resulting in the present invention. That is, the above problems related to the present invention are solved by the following means.
  • X 1 to X 5 each independently represent a nitrogen atom or CR 1 .
  • R 1 each independently represents a hydrogen atom, an aryl group, a heteroaryl group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an amino group, a cyano group, a thiol group, a carbonyl group, a halogeno group, a trifluoromethyl group, Alternatively, it may represent a hydroxy group and further have a substituent.
  • a laminate comprising a metal layer, a surface modification layer and a resist layer,
  • the surface-modified layer contains a nitrogen-containing heteroaromatic compound having a structure represented by the following general formula (1), ClogP of the nitrogen-containing heteroaromatic ring compound is in the range of 2-5.
  • X 1 to X 5 each independently represent a nitrogen atom or CR 1 .
  • R 1 each independently represents a hydrogen atom, an aryl group, a heteroaryl group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an amino group, a cyano group, a thiol group, a carbonyl group, a halogeno group, a trifluoromethyl group, Alternatively, it may represent a hydroxy group and further have a substituent.
  • a method for forming a metal wiring pattern by photolithography A metal wiring pattern comprising a step of forming a surface-modified layer between a metal layer and a resist layer using the surface-modifying agent according to any one of items 1 to 4. method of formation.
  • Step (A) A step of pickling a metal-clad laminate in which a metal layer is formed on an insulating layer.
  • Step (B) A step of forming a surface-modified layer on the metal layer of the metal-clad laminate using the surface-modifying agent according to any one of items 1 to 4.
  • Step (C) A step of forming a resist layer containing a photosensitive resin on the surface modification layer.
  • Step (D) a step of patterning the resist layer by exposure and development.
  • Step (E) a step of etching the surface modification layer and the metal layer through the resist layer.
  • Step (F) a step of stripping the resist layer from the metal-clad laminate.
  • a method for manufacturing a printed wiring board by photolithography A method for manufacturing a printed wiring board, comprising the method for forming a metal wiring pattern according to any one of items 8 to 11.
  • a surface modifier that achieves both etchability and peelability of a resist material, a laminate using the surface modifier, a method for forming a metal wiring pattern, and a method for manufacturing a printed wiring board are provided. can provide.
  • the nitrogen atom interacts with the metal layer, and the condensed ring structure interacts with the resist layer, thereby forming a gap between the resist layer and the metal layer.
  • Adhesiveness can be enhanced and etchability can be improved.
  • the condensed ring structure portion of the nitrogen-containing heteroaromatic ring compound is too small, the size of the area that interacts with the resist layer becomes insufficient, failing to exhibit a high adhesive effect.
  • the condensed ring structure portion of the nitrogen-containing heteroaromatic ring compound is too large, the adhesion becomes too high, resulting in poor peelability. Since the nitrogen-containing heteroaromatic ring compound contained in the surface modifier of the present invention has a structure represented by the general formula (1), the adhesiveness can be improved while maintaining the peelability.
  • the nitrogen-containing heteroaromatic ring compound contained in the surface modifier of the present invention has a ClogP within the range of 2 to 5, the effect of improving etching properties is further enhanced.
  • side etching has a more pronounced effect on etching defects.
  • a surface modifier containing a nitrogen-containing heteroaromatic ring compound having ClogP which is an index of hydrophobicity, of 2 or more, penetration of the etchant between the resist layer and the metal layer is prevented. side etching can be suppressed.
  • the surface modifier of the present invention can suppress the occurrence of insufficient etching.
  • Diagram showing the process of forming a metal wiring pattern (metal-clad laminate) A diagram showing the formation process of a metal wiring pattern (formation of a surface modification layer) A diagram showing a process of forming a metal wiring pattern (formation of a resist layer) A diagram showing a process of forming a metal wiring pattern (patterning of a resist layer) A diagram showing a process of forming a metal wiring pattern (etching of a surface modification layer and a metal layer) Diagram showing the process of forming a metal wiring pattern (removing the resist layer)
  • the surface modifier of the present invention is a surface modifier used between a metal layer and a resist layer in metal wiring pattern formation, and is a nitrogen-containing heteroaromatic ring having a structure represented by the general formula (1).
  • ClogP of the nitrogen-containing heteroaromatic ring compound is in the range of 2-5. This feature is a technical feature common to or corresponding to the following embodiments.
  • X 1 , X 2 and X 4 represent CR 1 and X 3 from the viewpoint of improving adhesion and peelability in a well-balanced manner. and X 5 preferably represent a nitrogen atom.
  • the concentration of the nitrogen-containing heteroaromatic ring compound is preferably within the range of 0.1 to 500 mass ppm.
  • the embodiment of the surface modifier of the present invention preferably contains at least water or alcohol as a solvent.
  • the laminate of the present invention is a laminate comprising a metal layer, a surface-modified layer and a resist layer, wherein the surface-modified layer comprises a nitrogen-containing heteroaromatic compound having a structure represented by the general formula (1).
  • the nitrogen-containing heteroaromatic ring compound has a ClogP in the range of 2-5.
  • X 1 , X 2 and X 4 represent CR 1
  • X 3 and X5 preferably represents a nitrogen atom.
  • the metal layer is preferably a layer containing copper or a copper alloy as a main component from the viewpoint of workability and conductivity.
  • the method for forming a metal wiring pattern of the present invention is a method for forming a metal wiring pattern by photolithography, and uses the surface modifier of the present invention to form a surface modified layer between a metal layer and a resist layer. It is characterized by having a step.
  • the steps (B) and (C) are performed. It is preferable to have a step of washing with water the metal-clad laminate on which the surface modified layer is formed in between.
  • the metal layer is a layer containing copper or a copper alloy as a main component.
  • the method of manufacturing a printed wiring board of the present invention is characterized by including the method of forming a metal wiring pattern of the present invention.
  • the surface modifier of the present invention is a surface modifier used between a metal layer and a resist layer in metal wiring pattern formation, and has a structure represented by the following general formula (1): and ClogP of the nitrogen-containing heteroaromatic ring compound is in the range of 2 to 5.
  • the nitrogen-containing heteroaromatic ring compound according to the present invention can improve adhesiveness while maintaining peelability.
  • X 1 to X 5 each independently represent a nitrogen atom or CR 1 .
  • R 1 each independently represents a hydrogen atom, an aryl group, a heteroaryl group, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an amino group, a cyano group, a thiol group, a carbonyl group, a halogeno group, a trifluoromethyl group, Alternatively, it may represent a hydroxy group and further have a substituent.
  • the condensed ring structure is composed of two heteroaryl rings.
  • CR 1 preferably has an aryl group or a heteroaryl group, and more preferably the aryl group or heteroaryl group is substituted with an alkyl group, an alkoxy group, or a carbonyl group.
  • X 1 , X 2 and X 4 preferably represent CR 1
  • X 3 and X 5 preferably represent a nitrogen atom. This makes it possible to improve the adhesiveness and the releasability in a well-balanced manner.
  • the nitrogen-containing heteroaromatic ring compound according to the present invention has a ClogP of 2 or more, the penetration of the etchant between the resist layer and the metal layer is suppressed, and side etching is less likely to occur.
  • the ClogP is 5 or less, the etchant can easily enter even a narrow space, so insufficient etching is less likely to occur.
  • ClogP is a value obtained by calculation of the logarithmic value logP of the 1-octanol/water partition coefficient P, and serves as an index of the hydrophobicity of nitrogen-containing heteroaromatic compounds in the present invention.
  • the software ChemDraw registered trademark of PerkinElmer Informatics, Inc. is used to calculate ClogP.
  • nitrogen-containing heteroaromatic ring compounds having a structure represented by general formula (1) and having a ClogP within the range of 2 to 5 are given below.
  • the nitrogen-containing heteroaromatic ring compound according to the present invention is not limited to these.
  • the nitrogen-containing heteroaromatic ring compound contained in the surface modifier of the present invention may be of one type or two or more types.
  • the surface modifier of the present invention preferably contains at least water or alcohol as a solvent.
  • the alcohol include methanol, ethanol, 2-propanol and the like. Two or more kinds of water or alcohols may be used in combination as the solvent.
  • the concentration of the nitrogen-containing heteroaromatic ring compound is preferably within the range of 0.1 to 500 mass ppm.
  • the surface modifier of the present invention may contain components other than the above.
  • Other ingredients include surfactants, preservatives, stabilizers, acids, bases, pH adjusters and the like.
  • the laminate of the present invention is a laminate comprising a metal layer, a surface-modified layer and a resist layer, wherein the surface-modified layer has a structure represented by the general formula (1). and a nitrogen-containing heteroaromatic ring compound having ClogP in the range of 2 to 5.
  • the surface-modified layer can be formed by applying the surface-modifying agent of the present invention to the surface of the metal layer and drying it.
  • the thickness of the surface-modified layer is not particularly limited, it is preferably within the range of 0.1 to 20 nm from the viewpoint of the effects of the present invention.
  • the metal layer is a layer whose main component is metal, which is the material of the metal wiring pattern.
  • the main component means a component containing 50% by mass or more.
  • the metal used for the metal layer is not particularly limited, and for example, copper, gold, aluminum, nickel, tin, lead, titanium, palladium, platinum, zinc, molybdenum, tungsten, and alloys thereof can be used. Among these, from the viewpoint of workability and conductivity, it is preferable to use copper or a copper alloy as a main component.
  • the thickness of the metal layer is not particularly limited, and may be set according to the thickness of the metal wiring pattern to be formed.
  • the laminate of the present invention preferably has an insulating layer under the metal layer.
  • the insulating layer is not particularly limited, and a resin sheet or prepreg that is generally used as an insulating layer can be used.
  • the laminated body having the insulating layer as described above corresponds to the laminated body 6 in FIG. 3 showing the resist layer forming process to be described later.
  • the resist layer is not particularly limited as long as it contains a photosensitive resin that can be patterned by photolithography, and can be formed by laminating a dry film resist or applying a liquid resist material. Moreover, the resist layer may be of a negative type in which the exposed portion becomes a pattern, or of a positive type in which the exposed portion becomes a pattern.
  • the method for forming a metal wiring pattern of the present invention is a method for forming a metal wiring pattern by photolithography, and uses the surface modifier of the present invention to form a metal layer and a resist layer. It is characterized by having a step of forming a surface modified layer therebetween.
  • a metal wiring pattern is formed by having the following steps (A) to (F).
  • Step (A) A step of pickling a metal-clad laminate in which a metal layer is formed on an insulating layer.
  • Step (B) A step of forming a surface-modified layer on the metal layer of the metal-clad laminate using the surface-modifying agent according to any one of claims 1 to 4.
  • Step (C) A step of forming a resist layer containing a photosensitive resin on the surface modification layer.
  • Step (E) a step of etching the surface modification layer and the metal layer through the resist layer.
  • Step (F) a step of stripping the resist layer from the metal-clad laminate.
  • step (A) the metal-clad laminate 5 (see FIG. 1) in which the metal layer 2 is formed on the insulating layer 1 is washed with an acid.
  • the acid cleaning liquid is not particularly limited, and conventionally known liquids can be used. Moreover, you may wash with water after acid washing.
  • the insulating layer 1 is an insulating layer that serves as a base material for metal wiring patterns.
  • the insulating layer 1 is made of an insulating material such as resin, and may be a prepreg in which a base material such as paper or glass is impregnated with resin.
  • the metal layer 2 is the same as the metal layer of the laminate.
  • step (B) the surface-modified layer 3 is formed on the metal layer 2 of the metal-clad laminate 5 using the surface-modifying agent of the present invention (see FIG. 2). Specifically, a surface modifying agent is applied onto the metal layer 2 to form the surface modifying layer 3 .
  • the thickness of the surface modification layer 3 is not particularly limited, it is preferably within the range of 0.1 to 20 nm from the viewpoint of the effects of the present invention.
  • step (B) and the next step (C) it is preferable to have a step of washing the metal-clad laminate 5 with the surface-modified layer 3 formed thereon. This allows the removal of excess surface modifiers that are poorly interacting with the metal layer.
  • step (C) a resist layer 4 containing a photosensitive resin is formed on the surface modified layer 3 (see FIG. 3). Since the laminate 6 in this state includes the metal layer 2, the surface modification layer 3 and the resist layer 4, it corresponds to the laminate of the present invention.
  • the resist layer 4 is not particularly limited as long as it contains a photosensitive resin that can be patterned by photolithography in the same manner as the resist layer of the laminate. can be formed by applying
  • step (D) the resist layer 4 is patterned by exposure and development (see FIG. 4). Specifically, by exposing the resist layer 4 using a photomask that can expose the resist layer 4 in an arbitrary pattern, and then dissolving and removing unnecessary portions of the resist layer 4 using a developer, Patterning. It is preferable to wash with water after development.
  • the exposure conditions and development conditions are not particularly limited, and conventionally known conditions can be applied.
  • step (E) the surface modified layer 3 and the metal layer 2 are etched through the resist layer 4 (see FIG. 5). Specifically, the surface modification layer 3 and the metal layer 3 are patterned by dissolving the surface modification layer 3 and the metal layer 3 in the portions where the resist layer 4 has been removed by wet etching using an etchant. .
  • the etching conditions are not particularly limited, and conventionally known conditions can be applied.
  • step (F) the resist layer 4 is removed from the metal-clad laminate 5 (see FIG. 6).
  • the surface-modified layer 3 is easily separated from the resist layer 4, so the surface-modified layer 3 is likely to remain on the metal layer 2 of the metal-clad laminate 5.
  • the surface modification layer 3 may remain on the metal layer 2 or may be peeled off together with the resist layer 4 .
  • the method for removing the resist layer 4 is not particularly limited, it is preferable to remove it using a remover.
  • the stripping liquid is not particularly limited, and conventionally known ones can be applied.
  • the metal wiring pattern 7 can be formed.
  • a method for manufacturing a printed wiring board according to the present invention is a method for manufacturing a printed wiring board by photolithography, and is characterized by including the above-described method for forming a metal wiring pattern according to the present invention. do.
  • the nitrogen-containing heteroaromatic ring compounds used in the examples are as follows.
  • the ClogP of the above nitrogen-containing heteroaromatic ring compound was calculated with ChemDraw. The calculated values are shown in the table below.
  • a nitrogen-containing heteroaromatic ring compound (A-7) was added to a solvent consisting of 20% by mass of ethanol and 80% by mass of ion-exchanged water so as to have a concentration of 20 ppm by mass. 1 was prepared.
  • Step (A) A copper clad laminate (R-1766 manufactured by Panasonic Corporation) having a metal layer formed on an insulating layer is acid-cleaned using an acid cleaning solution (CP-30 manufactured by Sanwa Chemical Industry Co., Ltd.) and a spray-type cleaning device, It was then washed with water.
  • an acid cleaning solution CP-30 manufactured by Sanwa Chemical Industry Co., Ltd.
  • Steps (B) and (B') The above-prepared surface modifier No. 2 was applied onto the metal layer of the copper-clad laminate that had been acid-washed and water-washed. 1 was applied using a spray-type applicator, and then washed with water. After washing with water, water was removed with a PVA roller and dried with an air knife at 80° C. to form a surface modified layer with a thickness of 5 nm.
  • a dry film resist (AK-4034 manufactured by Asahi Kasei Co., Ltd.) is laminated with a hot roll laminator under the conditions of a roll temperature of 105 ° C., an air pressure of 0.35 MPa, and a lamination speed of 1.5 m / min. to form a resist layer.
  • the dry film resist used (AK-4034 manufactured by Asahi Kasei Co., Ltd.) has a support made of a polyethylene terephthalate film on one side and a protective layer made of a polyethylene film on the other side. Lamination was carried out by allowing the surface on which the protective layer was present to adhere to the metal layer via the surface-modified layer while peeling off the protective layer.
  • Step (D) Using a chromium glass mask, the resist layer was exposed by a parallel light exposure machine (HMW-801 manufactured by ORC Co., Ltd.). As the exposure condition, 60 mj/cm 2 , which is the recommended condition for dry film resist, was adopted. A mask pattern for forming 100 lines with a line/space ratio of 50 ⁇ m/50 ⁇ m was used. The support was peeled off from the resist layer after exposure. After that, the unexposed portions of the resist layer are dissolved and removed at 30°C using a developer consisting of an aqueous solution of 1% by mass of sodium carbonate (Na 2 CO 3 ) and an alkaline developer, and then washed with water. Developed. The resist layer was patterned by the above operation.
  • a parallel light exposure machine HMW-801 manufactured by ORC Co., Ltd.
  • As the exposure condition 60 mj/cm 2 , which is the recommended condition for dry film resist, was adopted.
  • Step (E) In a dipping method, using an etchant consisting of an aqueous solution of 2% by mass of hydrochloric acid (HCl) and 2% by mass of ferric chloride (FeCl 3 ), the surface modified layer was formed at a temperature of 30° C. and a dipping time of 1 minute. and etched the metal layer.
  • a etchant consisting of an aqueous solution of 2% by mass of hydrochloric acid (HCl) and 2% by mass of ferric chloride (FeCl 3 .
  • Step (F) The resist layer was stripped from the copper-clad laminate at a temperature of 50° C. using a stripping solution consisting of an aqueous solution of 3% by mass of sodium hydroxide (NaOH).
  • Metal wiring pattern no. 1 was formed. 2-17 were formed.
  • "202J25T" in the table is a dry film resist (202J25T manufactured by Nikko Materials Co., Ltd.).
  • the surface modifier of the present invention has good fine line formation property. It is understood that Moreover, from the evaluation of the resist strippability, it can be seen that the surface modifier of the present invention is also excellent in the effect of improving the strippability of the resist material.
  • the surface modifier of the present invention achieves both etchability and peelability of the resist material.
  • the present invention is applied to a surface modifier that achieves both etching property and peelability of a resist material, a laminate using the surface modifier, a method for forming a metal wiring pattern, and a method for manufacturing a printed wiring board. can be done.

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PCT/JP2022/025011 2021-07-15 2022-06-23 表面改質剤、積層体、金属配線パターンの形成方法、及びプリント配線板の製造方法 WO2023286555A1 (ja)

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CN202280044549.3A CN117546615A (zh) 2021-07-15 2022-06-23 表面改性剂、层叠体、金属配线图案的形成方法及印刷配线板的制造方法
JP2023535202A JPWO2023286555A1 (zh) 2021-07-15 2022-06-23
KR1020237045158A KR20240014516A (ko) 2021-07-15 2022-06-23 표면 개질제, 적층체, 금속 배선 패턴의 형성 방법, 및 프린트 배선판의 제조 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04173983A (ja) * 1990-11-07 1992-06-22 Shikoku Chem Corp 銅及び銅合金の表面処理方法
JP2008045156A (ja) * 2006-08-11 2008-02-28 Nippon Hyomen Kagaku Kk 銅又は銅合金表面の表面処理剤及び処理方法
JP2010530478A (ja) * 2007-06-21 2010-09-09 エントン インコーポレイテッド 青銅の腐食保護
JP2013080018A (ja) * 2011-09-30 2013-05-02 Jsr Corp 液浸用上層膜形成組成物及びレジストパターン形成方法
JP2019121777A (ja) * 2017-12-28 2019-07-22 東京応化工業株式会社 表面処理方法、表面処理剤、及び基板上に領域選択的に製膜する方法
JP2019159151A (ja) * 2018-03-14 2019-09-19 株式会社東芝 配線パターンの形成方法、これを用いたプリント回路基板、半導体パッケージ、及び電子機器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009299096A (ja) 2008-06-10 2009-12-24 Ebara Densan Ltd プリント回路基板用銅及び銅合金の表面処理液と表面処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04173983A (ja) * 1990-11-07 1992-06-22 Shikoku Chem Corp 銅及び銅合金の表面処理方法
JP2008045156A (ja) * 2006-08-11 2008-02-28 Nippon Hyomen Kagaku Kk 銅又は銅合金表面の表面処理剤及び処理方法
JP2010530478A (ja) * 2007-06-21 2010-09-09 エントン インコーポレイテッド 青銅の腐食保護
JP2013080018A (ja) * 2011-09-30 2013-05-02 Jsr Corp 液浸用上層膜形成組成物及びレジストパターン形成方法
JP2019121777A (ja) * 2017-12-28 2019-07-22 東京応化工業株式会社 表面処理方法、表面処理剤、及び基板上に領域選択的に製膜する方法
JP2019159151A (ja) * 2018-03-14 2019-09-19 株式会社東芝 配線パターンの形成方法、これを用いたプリント回路基板、半導体パッケージ、及び電子機器

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