WO2023282168A1 - Dispositif d'exposition - Google Patents

Dispositif d'exposition Download PDF

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Publication number
WO2023282168A1
WO2023282168A1 PCT/JP2022/026201 JP2022026201W WO2023282168A1 WO 2023282168 A1 WO2023282168 A1 WO 2023282168A1 JP 2022026201 W JP2022026201 W JP 2022026201W WO 2023282168 A1 WO2023282168 A1 WO 2023282168A1
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WO
WIPO (PCT)
Prior art keywords
scanning direction
predetermined range
exposure
substrate
exposing
Prior art date
Application number
PCT/JP2022/026201
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English (en)
Japanese (ja)
Inventor
加藤正紀
水野恭志
中島利治
藤村嘉彦
Original Assignee
株式会社ニコン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to KR1020237045134A priority Critical patent/KR20240014513A/ko
Priority to CN202280047560.5A priority patent/CN117616341A/zh
Priority to JP2023533578A priority patent/JP7548441B2/ja
Publication of WO2023282168A1 publication Critical patent/WO2023282168A1/fr
Priority to US18/542,169 priority patent/US20240126178A1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving

Definitions

  • a step-and-repeat projection exposure apparatus such as liquid crystal and organic EL display panels and semiconductor elements (integrated circuits, etc.
  • And-scan projection exposure apparatuses so-called scanning steppers (also called scanners)
  • This type of exposure apparatus projects and exposes a mask pattern for an electronic device onto a photosensitive layer coated on the surface of a substrate to be exposed (hereinafter simply referred to as a substrate) such as a glass substrate, semiconductor wafer, printed wiring board, or resin film. are doing.
  • a digital mirror device or the like in which a large number of micromirrors that are slightly displaced are regularly arranged can be used instead of the mask substrate.
  • a digital mirror device or the like in which a large number of micromirrors that are slightly displaced are regularly arranged.
  • illumination light obtained by mixing light from a laser diode (LD) with a wavelength of 375 nm and light from an LD with a wavelength of 405 nm in a multimode fiber bundle is sent to a digital mirror.
  • a device (DMD) is irradiated with light, and reflected light from each of a large number of tilt-controlled micromirrors is projected and exposed onto a substrate via an imaging optical system and a microlens array.
  • the exposure apparatus it is desired to achieve high-precision exposure with high throughput.
  • an exposure apparatus includes a substrate holder that holds and moves a substrate, a spatial light modulator that has light modulation elements arranged two-dimensionally, and an illumination that irradiates illumination light onto the spatial light modulator.
  • a projection unit that guides the illumination light from the light modulation element to each of light irradiation area groups that are two-dimensionally arranged on the substrate in a first direction and in a second direction perpendicular to the first direction; and a controller for driving the substrate holder in the scanning direction, wherein the light modulation element is oriented at a predetermined angle ⁇ (0° ⁇ ⁇ 90°), and the controller controls the center of the illumination light emitted from each of the light modulation elements irradiated within the predetermined range when exposing the predetermined range of the substrate.
  • the substrate holder is scanned at such a speed that the spot positions indicating are staggered.
  • FIG. 1 is a perspective view showing an overview of the external configuration of an exposure apparatus according to one embodiment.
  • FIG. 2 is a diagram showing an arrangement example of a DMD projection area projected onto a substrate by each projection unit of a plurality of exposure modules.
  • FIG. 3 is a diagram for explaining the state of stitch exposure by each of the four specific projection areas in FIG.
  • FIG. 4 is an optical layout diagram of a specific configuration of two exposure modules arranged in the X direction (scanning exposure direction) viewed in the XZ plane.
  • FIG. 5(a) is a diagram schematically showing the DMD
  • FIG. 5(b) is a diagram showing the DMD when the power is off
  • FIG. 5(c) is an explanation of the mirrors in the ON state.
  • FIG. 5(a) is a diagram schematically showing the DMD
  • FIG. 5(b) is a diagram showing the DMD when the power is off
  • FIG. 5(c) is an explanation of the mirrors in the ON state.
  • FIG. 5D is a diagram for explaining the mirror in the OFF state.
  • FIG. 6 is a diagram showing a schematic configuration of an alignment device provided on a calibration reference portion attached to the edge of the substrate holder of the exposure apparatus.
  • FIG. 7 is a diagram schematically showing a projection area (light irradiation area group) and an exposure target area (area where a line pattern is exposed) on the substrate.
  • FIG. 8 is a diagram showing a rectangular area that is part of a linear exposure target area and a projection area (light irradiation area group).
  • FIGS. 9A to 9C are diagrams for explaining an example in which spot positions are arranged in a square in a rectangular area.
  • FIGS. 9A to 9C are diagrams for explaining an example in which spot positions are arranged in a square in a rectangular area.
  • FIGS. 10A to 10C are diagrams for explaining an example in which spot positions are staggered in a rectangular area.
  • FIG. 11 is a table showing an arrangement example of spot positions in zigzag exposure.
  • FIG. 12 is a diagram for explaining zigzag exposure at a joint portion.
  • 13A and 13B are diagrams for explaining an example in which two DMDs share exposure at a spliced portion.
  • FIGS. 14(a) to 14(k) are diagrams for explaining line pattern position correction.
  • FIG. 15 is a graph showing the results of position measurement when line pattern position correction is performed by the method of FIGS. 14(a) to 14(k).
  • FIGS. 16A to 16K are diagrams (part 1) for explaining the line width adjustment of the line pattern.
  • FIGS. 17A to 17L are diagrams (part 2) for explaining line width adjustment of line patterns.
  • FIG. 18 is a graph showing line width measurement results when the line width of the line pattern is adjusted by the method of FIGS. 16(a) to 17(l).
  • FIGS. 19A to 19G are diagrams for explaining correction based on distortion measurement results.
  • 20(a) to 20(g) are diagrams for explaining the correction based on the measurement result of the illuminance distribution.
  • a pattern exposure apparatus (hereinafter simply referred to as an exposure apparatus) according to one embodiment will be described with reference to the drawings.
  • FIG. 1 is a perspective view showing an overview of the external configuration of an exposure apparatus EX according to one embodiment.
  • the exposure apparatus EX is an apparatus that forms and projects, onto a substrate to be exposed, exposure light whose intensity distribution in space is dynamically modulated by a spatial light modulator (SLM).
  • SLM spatial light modulator
  • Examples of spatial light modulators include liquid crystal devices, digital micromirror devices (DMDs), magneto-optical spatial light modulators (MOSLMs), and the like.
  • the exposure apparatus EX according to this embodiment includes the DMD 10 as a spatial light modulator, but may include other spatial light modulators.
  • the exposure apparatus EX is a step-and-scan projection exposure apparatus (scanner) that exposes a rectangular glass substrate used in a display device (flat panel display) or the like. be.
  • the glass substrate is a flat panel display substrate P having at least one side length or diagonal length of 500 mm or more and a thickness of 1 mm or less.
  • the exposure device EX exposes a photosensitive layer (photoresist) formed on the surface of the substrate P with a constant thickness to a projected image of a pattern created by the DMD.
  • the substrate P unloaded from the exposure apparatus EX after exposure is sent to predetermined process steps (film formation step, etching step, plating step, etc.) after the development step.
  • the exposure apparatus EX includes a pedestal 2 placed on active vibration isolation units 1a, 1b, 1c, and 1d (1d is not shown), a platen 3 placed on the pedestal 2, and An XY stage 4A that can move two-dimensionally, a substrate holder 4B that sucks and holds the substrate P on a plane on the XY stage 4A, and laser length measurement interference that measures the two-dimensional movement position of the substrate holder 4B (substrate P).
  • a stage device comprising an interferometer (hereinafter simply referred to as an interferometer) IFX and IFY1 to IFY4 is provided.
  • Such a stage apparatus is disclosed, for example, in US Patent Publication No. 2010/0018950 and US Patent Publication No. 2012/0057140.
  • the XY plane of the orthogonal coordinate system XYZ is set parallel to the flat surface of the surface plate 3 of the stage device, and the XY stage 4A is set to be translatable within the XY plane.
  • the direction parallel to the X-axis of the coordinate system XYZ is set as the scanning movement direction of the substrate P (XY stage 4A) during scanning exposure.
  • the movement position of the substrate P in the X-axis direction is sequentially measured by the interferometer IFX, and the movement position in the Y-axis direction is sequentially measured by at least one (preferably two) of the four interferometers IFY1 to IFY4. be.
  • the substrate holder 4B is configured to be slightly movable in the direction of the Z-axis perpendicular to the XY plane with respect to the XY stage 4A and to be slightly inclined in any direction with respect to the XY plane, and projected onto the surface of the substrate P. Focus adjustment and leveling (parallelism) adjustment with respect to the imaging plane of the pattern are actively performed. Further, the substrate holder 4B is configured to be slightly rotatable ( ⁇ z rotation) about an axis parallel to the Z axis in order to actively adjust the tilt of the substrate P within the XY plane.
  • the exposure apparatus EX further includes an optical surface plate 5 that holds a plurality of exposure (drawing) modules MU(A), MU(B), and MU(C), and a main column 6a that supports the optical surface plate 5 from the pedestal 2. , 6b, 6c, 6d (6d not shown).
  • Each of the plurality of exposure modules MU(A), MU(B), and MU(C) is attached to the +Z direction side of the optical platen 5 .
  • the plurality of exposure modules MU(A), MU(B), and MU(C) may be attached individually to the optical surface plate 5, or the rigidity may be increased by connecting two or more exposure modules. It may be attached to the optical platen 5 in a state where it is stuck.
  • Each of the plurality of exposure modules MU(A), MU(B), and MU(C) is attached to the +Z direction side of the optical surface plate 5, and an illumination unit ILU that receives illumination light from the optical fiber unit FBU; It has a projection unit PLU attached to the -Z direction side of the optical platen 5 and having an optical axis parallel to the Z axis. Furthermore, each of the exposure modules MU(A), MU(B), and MU(C) serves as a light modulating section that reflects the illumination light from the illumination unit ILU in the -Z direction and causes it to enter the projection unit PLU.
  • a DMD 10 is provided. A detailed configuration of the exposure module including the illumination units ILU and DMD 10 and the projection unit PLU will be described later.
  • a plurality of alignment systems (microscopes) ALG for detecting alignment marks formed at a plurality of predetermined positions on the substrate P are attached to the -Z direction side of the optical platen 5 of the exposure apparatus EX.
  • a calibration reference unit CU for calibration is provided at the -X direction end on the substrate holder 4B. Calibration is performed by confirming (calibrating) the relative positional relationship within the XY plane of each detection field of alignment system ALG, and by performing projection unit Confirmation (calibration) of the baseline error between each projection position of the pattern image projected from the PLU and the position of each detection field of the alignment system ALG, and confirmation of the position and image quality of the pattern image projected from the projection unit PLU.
  • the number of modules may be less than or more than nine.
  • three rows of exposure modules are arranged in the X-axis direction, but the number of rows of exposure modules arranged in the X-axis direction may be two or less, or four or more. .
  • FIG. 2 is a diagram showing an arrangement example of the projection areas IAn of the DMD 10 projected onto the substrate P by the projection units PLU of the exposure modules MU(A), MU(B), and MU(C).
  • System XYZ is set the same as in FIG.
  • the projection area IAn can be said to be the irradiation range (light irradiation area group) of the illumination light reflected by the plurality of micromirrors 10a of the DMD 10 and guided onto the substrate P by the projection unit PLU.
  • each of the exposure modules MU (A) in the first row, the exposure modules MU (B) in the second row, and the exposure modules MU (C) in the third row, which are spaced apart in the X direction, It consists of nine modules arranged in the Y direction.
  • the exposure module MU (A) is composed of nine modules MU1 to MU9 arranged in the +Y direction
  • the exposure module MU (B) is composed of nine modules MU10 to MU18 arranged in the -Y direction
  • the module MU(C) is composed of nine modules MU19 to MU27 arranged in the +Y direction.
  • the modules MU1 to MU27 all have the same configuration, and when the exposure module MU(A) and the exposure module MU(B) face each other in the X direction, the exposure module MU(B) and the exposure module MU(C) are in a back-to-back relationship with respect to the X direction.
  • the -Y direction ends of the projection areas IA1 to IA9 in the first row and the +Y directions of the projection areas IA10 to IA18 in the second row
  • a splice exposure is performed at the ends of the direction. Areas on the substrate P that have not been exposed in the projection areas IA1 to IA18 in the first and second rows are successively exposed by the projection areas IA19 to IA27 in the third row.
  • the center point of each of the projection areas IA1 to IA9 in the first row is located on a line k1 parallel to the Y axis
  • the center point of each of the projection areas IA10 to IA18 in the second row is on a line k2 parallel to the Y axis
  • the center point of each of the projection areas IA19 to IA27 in the third row is located on a line k3 parallel to the Y-axis.
  • the distance in the X direction between the lines k1 and k2 is set to the distance XL1
  • the distance in the X direction between the lines k2 and k3 is set to the distance XL2.
  • the connecting portion between the -Y direction end of the projection area IA9 and the +Y direction end of the projection area IA10 is OLa
  • the -Y direction end of the projection area IA10 and the +Y direction end of the projection area IA27 and OLb, and the joint portion between the +Y-direction end of the projection area IA8 and the -Y-direction end of the projection area IA27 is OLc.
  • the orthogonal coordinate system XYZ is set the same as in FIGS.
  • the coordinate system X'Y' in the projection areas IA8, IA9, IA10, IA27 (and all other projection areas IAn) is It is set to incline by an angle ⁇ k (0° ⁇ k ⁇ 90°) with respect to the X-axis and Y-axis (lines k1 to k3) of the orthogonal coordinate system XYZ. That is, the regions (light irradiation regions) on the substrate P onto which the illumination light reflected by the numerous micromirrors of the DMD 10 is projected are two-dimensionally arranged along the X'-axis and the Y'-axis.
  • a circular area encompassing each of the projection areas IA8, IA9, IA10, IA27 (and all other projection areas IAn as well) in FIG. 3 represents the circular image field PLf' of the projection unit PLU.
  • the projection image (light irradiation area) of the micromirrors arranged obliquely (angle ⁇ k) at the end of the projection area IA9 in the -Y' direction and the oblique (angle ⁇ k) end of the +Y' direction of the projection area IA10. .theta.k) are set so as to overlap the projection images (light irradiation areas) of the micromirrors.
  • the projection image (light irradiation area) of the micromirrors arranged obliquely (angle ⁇ k) at the ⁇ Y′ direction end of the projection area IA10 and the oblique +Y′ direction end of the projection area IA27 It is set so as to overlap the projection image (light irradiation area) of the micromirrors arranged at (angle ⁇ k).
  • the projection image (light irradiation area) of the micromirrors arranged obliquely (angle ⁇ k) at the +Y′ direction end of the projection area IA8 and the ⁇ Y′ direction end of the projection area IA27 are projected. It is set so as to overlap the projected image (light irradiation area) of the micromirrors arranged obliquely (angle ⁇ k).
  • FIG. 4 is an optical layout diagram of the specific configuration of the module MU18 in the exposure module MU(B) and the module MU19 in the exposure module MU(C) shown in FIGS. 1 and 2, viewed in the XZ plane. is.
  • the orthogonal coordinate system XYZ in FIG. 4 is set the same as the orthogonal coordinate system XYZ in FIGS.
  • the module MU18 is shifted in the +Y direction with respect to the module MU19 by a constant interval and is installed in a back-to-back relationship.
  • the optical fiber unit FBU shown in FIG. 1 is composed of 27 optical fiber bundles FB1 to FB27 corresponding to the 27 modules MU1 to MU27 shown in FIG.
  • the illumination unit ILU of the module MU18 functions as a mirror 100 that reflects the illumination light ILm traveling in the -Z direction from the output end of the optical fiber bundle FB18, a mirror 102 that reflects the illumination light ILm from the mirror 100 in the -Z direction, and a collimator lens.
  • Mirror 102, input lens system 104, optical integrator 108, condenser lens system 110, and tilt mirror 112 are arranged along optical axis AXc parallel to the Z axis.
  • the optical fiber bundle FB18 is configured by bundling one optical fiber line or a plurality of optical fiber lines.
  • the illumination light ILm emitted from the output end of the optical fiber bundle FB18 (each of the optical fiber lines) is set to a numerical aperture (NA, also called divergence angle) so as to enter the input lens system 104 at the subsequent stage without being vignetted.
  • NA numerical aperture
  • the position of the front focal point of the input lens system 104 is designed to be the same as the position of the output end of the optical fiber bundle FB18.
  • the position of the rear focal point of the input lens system 104 is such that the illumination light ILm from a single or a plurality of point light sources formed at the output end of the optical fiber bundle FB18 is superimposed on the incident surface side of the MFE lens 108A of the optical integrator 108. is set to let Therefore, the incident surface of the MFE lens 108A is Koehler-illuminated by the illumination light ILm from the exit end of the optical fiber bundle FB18.
  • the geometric center point in the XY plane of the output end of the optical fiber bundle FB18 is positioned on the optical axis AXc, and the principal ray ( center line) is parallel (or coaxial) with the optical axis AXc.
  • Illumination light ILm from input lens system 104 is attenuated by an arbitrary value in the range of 0% to 90% by illumination adjustment filter 106, and then passes through optical integrator 108 (MFE lens 108A, field lens, etc.). , enter the condenser lens system 110 .
  • the MFE lens 108A is a two-dimensional arrangement of a large number of rectangular microlenses of several tens of ⁇ m square. ) is set to be almost similar to Also, the position of the front focal point of the condenser lens system 110 is set to be substantially the same as the position of the exit surface of the MFE lens 108A.
  • each illumination light from a point light source formed on each exit side of a large number of microlenses of the MFE lens 108A is converted into a substantially parallel light beam by the condenser lens system 110, and after being reflected by the tilt mirror 112, , are superimposed on the DMD 10 to form a uniform illuminance distribution. Since a surface light source in which a large number of point light sources (condensing points) are two-dimensionally densely arranged is generated on the exit surface of the MFE lens 108A, the MFE lens 108A functions as a surface light source forming member.
  • the optical axis AXc passing through the condenser lens system 110 and parallel to the Z-axis is bent by the tilt mirror 112 and reaches the DMD 10.
  • AXb the neutral plane including the center point of each of the numerous micromirrors of the DMD 10 is set parallel to the XY plane. Therefore, the angle formed by the normal to the neutral plane (parallel to the Z-axis) and the optical axis AXb is the incident angle ⁇ of the illumination light ILm with respect to the DMD 10 .
  • the DMD 10 is attached to the underside of a mount portion 10M fixed to the support column of the illumination unit ILU.
  • the mount section 10M is provided with a fine movement stage that combines a parallel link mechanism and an extendable piezo element as disclosed in, for example, International Publication No. 2006/120927. be done.
  • FIG. 5(a) is a diagram schematically showing the DMD 10
  • FIG. 5(b) is a diagram showing the DMD 10 when the power is off
  • FIG. 5(c) is an explanation of mirrors in the ON state
  • FIG. 5D is a diagram for explaining the mirror in the OFF state.
  • mirrors in the ON state are indicated by hatching.
  • the DMD 10 has a plurality of micromirrors 10a whose reflection angle can be changed and controlled.
  • the DMD 10 is of a roll-and-pitch drive type in which the ON state and the OFF state are switched by tilting in the roll direction and tilting in the pitch direction of the micromirror 10a.
  • each micromirror 10a when the power is off, the reflecting surface of each micromirror 10a is set parallel to the X'Y' plane.
  • the arrangement pitch of the micromirrors 10a in the X' direction is Pdx ([mu]m), and the arrangement pitch in the Y' direction is Pdy ([mu]m).
  • Each micromirror 10a is turned on by tilting around the Y'-axis.
  • FIG. 5(c) shows a case where only the central micromirror 10a is in the ON state and the other micromirrors 10a are in the neutral state (neither ON nor OFF state).
  • Each micromirror 10a is turned off by tilting around the X' axis.
  • FIG. 5(d) shows a case where only the central micromirror 10a is in the OFF state and the other micromirrors 10a are in the neutral state.
  • the ON-state micromirror 10a is arranged from the X'Y' plane so that the illumination light applied to the ON-state micromirror 10a is reflected in the X direction of the XZ plane. It is driven to tilt at a predetermined angle. Further, the micromirror 10a in the OFF state is driven to be inclined at a predetermined angle from the X'Y' plane so that the illumination light irradiated to the micromirror 10a in the ON state is reflected in the Y direction in the YZ plane. .
  • the DMD 10 generates an exposure pattern by switching the ON state and OFF state of each micromirror 10a.
  • Illumination light reflected by the mirror in the OFF state is absorbed by a light absorber (not shown).
  • the DMD 10 has been described as an example of a spatial light modulator, the DMD 10 has been described as a reflective type that reflects laser light. A diffractive type may also be used.
  • a spatial light modulator can spatially and temporally modulate laser light.
  • the illumination light ILm irradiated to the ON-state micromirror 10a of the micromirrors 10a of the DMD 10 is reflected in the X direction in the XZ plane toward the projection unit PLU.
  • the illumination light ILm irradiated to the OFF-state micromirror 10a among the micromirrors 10a of the DMD 10 is reflected in the Y direction in the YZ plane so as not to face the projection unit PLU.
  • a movable shutter 114 for shielding reflected light from the DMD 10 during a non-exposure period is detachably provided in the optical path between the DMD 10 and the projection unit PLU.
  • the movable shutter 114 is rotated to an angular position retracted from the optical path during the exposure period, as illustrated on the module MU19 side, and inserted obliquely into the optical path during the non-exposure period, as illustrated on the module MU18 side. is rotated to the desired angular position.
  • a reflecting surface is formed on the DMD 10 side of the movable shutter 114 , and the light from the DMD 10 reflected there is applied to the light absorber 117 .
  • the light absorber 117 absorbs light energy in the ultraviolet wavelength range (wavelength of 400 nm or less) without re-reflection and converts it into heat energy. Therefore, the light absorber 117 is also provided with a heat dissipation mechanism (radiating fins or a cooling mechanism). Although not shown in FIG. 4, the reflected light from the micromirror 10a of the DMD 10, which is in the OFF state during the exposure period, is reflected in the Y direction ( 4) is absorbed by a similar light absorber (not shown in FIG. 4).
  • the projection unit PLU attached to the lower side of the optical surface plate 5 is a double-telecentric combination composed of a first lens group 116 and a second lens group 118 arranged along an optical axis AXa parallel to the Z axis. It is configured as an image projection lens system.
  • the first lens group 116 and the second lens group 118 are translated in the direction along the Z-axis (optical axis AXa) by a fine actuator with respect to a support column fixed to the lower side of the optical surface plate 5.
  • the projection magnification Mp is set to approximately 1/6 in consideration of the tilt angle ⁇ k at .
  • An imaging projection lens system consisting of lens groups 116 and 118 inverts/inverts the reduced image of the entire mirror surface of the DMD 10 and forms an image on a projection area IA18 (IAn) on the substrate P.
  • the first lens group 116 of the projection unit PLU can be finely moved in the direction of the optical axis AXa by an actuator in order to finely adjust the projection magnification Mp (approximately ⁇ several tens of ppm), and the second lens group 118 is for high-speed focus adjustment. Therefore, the actuator can be finely moved in the direction of the optical axis AXa. Further, a plurality of oblique incident light type focus sensors 120 are provided below the optical surface plate 5 in order to measure the positional change of the surface of the substrate P in the Z-axis direction with submicron accuracy.
  • the projection area IAn must be tilted by the angle ⁇ k in the XY plane as described above with reference to FIG. (at least the optical path portion of the mirrors 102 to 112 along the optical axis AXc) are arranged so as to be inclined by an angle ⁇ k in the XY plane as a whole.
  • a light beam (that is, a spatially modulated light beam) formed only by reflected light from the micromirror 10a in the ON state among the micromirrors 10a of the DMD 10 is projected onto the micromirror 10a via the projection unit PLU.
  • area on the substrate P that is optically conjugate In the following description, a region on the substrate P that is conjugate with each micromirror 10a is called a light-irradiated region, and a group of light-irradiated regions is called a light-irradiated region group.
  • the projection area IAn matches the light irradiation area group. That is, the light-irradiated region group on the substrate P has a large number of light-irradiated regions arranged in two-dimensional directions (X' direction and Y' direction).
  • FIG. 6 is a functional block diagram showing the functional configuration of the exposure control device 300 included in the exposure apparatus EX according to this embodiment.
  • the exposure control device 300 includes a drawing data storage unit 310 , a control data creation unit 301 , a drive control unit 304 and an exposure control unit 306 .
  • the drawing data storage unit 310 sends drawing data MD1 to MD27 for pattern exposure to the DMDs 10 of the 27 modules MU1 to MU27 shown in FIG.
  • the drive control unit 304 creates control data CD1 to CD27 based on the measurement results of the interferometer IFX, and sends them to the modules MU1 to MU27. Further, the drive control unit 304 scans the XY stage 4A in the scanning direction (X-axis direction) at a predetermined speed based on the measurement result of the interferometer IFX.
  • the modules MU1 to MU27 control the driving of the micromirror 10a of the DMD 10 based on the drawing data MD1 to MD27 and the control data CD1 to CD27 sent from the drive control section 304 during scanning exposure.
  • the control data CD1 to CD27 are reset pulses.
  • Each micromirror 10a assumes a predetermined posture according to the drawing data MD1 to MD27 upon receiving the reset pulse. At this time, each micromirror 10a changes its posture corresponding to the number of times the reset pulse is received each time the reset pulse is received.
  • the exposure control unit (sequencer) 306 transmits the drawing data MD1 to MD27 from the drawing data storage unit 310 to the modules MU1 to MU27 in synchronization with the scanning exposure (moving position) of the substrate P, control data CD1 to CD27 (reset pulse).
  • FIG. 7 is a diagram schematically showing the projection area (light irradiation area group) IAn and the exposure target area (area where the line pattern is exposed) 30 on the substrate P.
  • the exposure target area 30 is scanned with respect to the projection area (light irradiation area group) IAn, and the DMD 10 detects the center of the light irradiation area 32 included in the projection area (light irradiation area group) IAn. ) is positioned within the exposure target region 30, the micromirror 10a corresponding to the light irradiation region 32 is turned on.
  • This rectangular area 34 is, for example, a square area with a side of 1 ⁇ m. It is also assumed that the light irradiation area 32 corresponding to each micromirror 10a is also a square area with a side of 1 ⁇ m.
  • the DMD 10 receives a reset pulse from the drive control unit 304 at the timing when the rectangular area 34 is at the position 34A to turn on the micromirror corresponding to the light irradiation area 210a. , such that when DMD 10 receives the next reset pulse to turn on the micromirror corresponding to illuminated area 210c, rectangular area 34 is positioned at position 34C. In this case, the rectangular area 34 will move by the free running distance shown in FIG. 8 between the reset pulses. That is, the free running distance is the distance between the rectangular area 34 located at the position 34A and the rectangular area 34 located at the position 34C.
  • FIG.9(b) is the figure which abbreviate
  • the rectangular area 34 is exposed in this manner, the rectangular area 34 is exposed with 26 pulses so that the spot positions are positioned in a 6 ⁇ 6 square arrangement (so that the spot positions are positioned on grid points arranged in the XY directions). will be exposed.
  • the distance between adjacent spot positions in the X-axis direction and the Y-axis direction is 0.2 ⁇ m.
  • the DMD 10 receives a reset pulse from the drive control unit 304 at the timing when the rectangular area 34 is at the position 34D, and turns on the micromirror corresponding to the light irradiation area 210d. , such that when DMD 10 receives the next reset pulse to turn on the micromirror corresponding to illuminated area 210f, rectangular area 34 will be at position 34F. In this case, the rectangular area 34 moves by the free running distance +1/5 ( ⁇ m) shown in FIG. 8 between the reset pulses.
  • the center position of the rectangular area 34 and the center position of the light irradiation area 210e match.
  • the center position of the rectangular region 34 at the position 34D and the center position of the light irradiation region 210d match. Therefore, omitting the free running distance, the positional relationship between the rectangular area 34 and the light irradiation area group when the substrate P is scanned at the second scanning speed can be represented as shown in FIG. 10(a).
  • 10A shows the position of the rectangular area 34 each time the DMD 10 receives the reset pulse to change the state of the micromirror 10a, and the light irradiation area 32 corresponding to the micromirror 10a that exposes the rectangular area 34.
  • FIG.10(b) is the figure which abbreviate
  • the rectangular area 34 is exposed in this way, the rectangular area 34 is exposed with 18 spot positions arranged (in a staggered arrangement) with 14 pulses as shown in FIG. 10(c).
  • the distance between adjacent spot positions in the X-axis direction and the Y-axis direction is 0.2 ⁇ m.
  • the zigzag arrangement enables exposure with the same resolution as in the case of the square arrangement.
  • the scanning speed of the substrate P can be increased, and a high throughput can be achieved. Therefore, in this embodiment, ⁇ k and the scanning speed of the substrate P are determined so that the spot positions are arranged in a staggered manner as shown in FIG. 10(c).
  • exposure such as that shown in FIG. 10C is referred to as zigzag exposure.
  • the spot positions can be positioned at the four corners of the rectangular area 34 .
  • an arrangement in which the spot positions are not positioned at the four corners of the rectangular area 34 may be employed.
  • each spot position can be located inside the rectangular area 34 as in arrangement (3).
  • the required number of pulses is 61 in arrangements (1) and (2), whereas the required number of pulses can be 50 in arrangement (3). Therefore, one of the arrangements (1), (2) and (3) can be selected according to the sensitivity of the resist applied on the substrate P, for example.
  • FIG. 12 is a diagram schematically showing a state in which a line pattern is exposed at a joint portion (for example, joint portion OLa).
  • a joint portion for example, joint portion OLa
  • the inside of the rectangular area 34 is zigzag exposed.
  • the line pattern may be exposed using only one DMD.
  • the portions that can be exposed by one DMD may be exposed, and the remaining portions may be exposed by the other DMD.
  • the number of exposure pulses may be shared substantially evenly for each of the two DMDs.
  • the locations (spot positions) to be exposed using each DMD may be set randomly, or as shown by “black circles ( ⁇ )” and “white circles ( ⁇ )” in FIG.
  • the ratio of exposed portions may gradually increase or decrease in the non-scanning direction (Y-axis direction) or the scanning direction.
  • FIG. 12 describes the case where the joint portion is a portion to be exposed using two DMDs, but it is not limited to this.
  • a joint portion is a portion where the projection area of the DMD passes through twice in succession. Also when exposing this joint portion, zigzag exposure can be performed as described above.
  • spot position indicated by a white circle near the center of the spot row on the right end, as shown in FIG.
  • spot position indicated by a double black circle is added to the left.
  • the line pattern when the line pattern is shifted leftward by 10 nm, as shown in FIG. position) to the left.
  • the line pattern can be shifted by eliminating/adding spot locations on or near the edges of the line pattern rather than eliminating/adding spot locations at or near the center of the line pattern. quantity can be increased.
  • FIGS. By changing the combination of adding a new spot on the left side and deleting (or not deleting) a part of the spot position that originally existed in this way, FIGS. As shown in 14(k), the line pattern can be shifted to the left by 10 nm, 20 nm, .
  • FIG. 15 shows the position measurement results when line pattern position correction is performed by the method of FIGS. 14(a) to 14(k). In this position measurement, how much the position of the line pattern was corrected (shifted) in the Y-axis direction was measured at 11 points in the X-axis direction indicated by arrows in FIG. 14(a). From FIG. 15, it can be seen that the position of the line pattern can be corrected to approximately the desired position at any position in the X-axis direction.
  • the ON/OFF state of the micromirror 10a of the DMD 10 is controlled so that zigzag exposure is performed. Thereby, a pattern can be exposed at a desired position.
  • one new spot position (double black circle) is placed on both sides of the reference pattern in FIG. 16(a), and two spot positions in the reference pattern are deleted. (white circle), the line width can be increased by 10 nm. Further, when increasing the line width by 20 nm, as shown in FIG. Two spot positions different from those in FIG. 16(b) may be deleted.
  • the line width can be adjusted by a combination of arranging the same number of new spot positions on both sides of the reference pattern and deleting (or not deleting) some of the spot positions of the reference pattern.
  • FIG. 18 shows the measurement results of the line width when the line width of the line pattern is adjusted by the method of FIGS. 16(a) to 17(l).
  • the line width (width in the Y-axis direction) of the line pattern was measured at 11 points in the X-axis direction indicated by arrows in FIG. 16(a). From FIG. 18, it can be seen that the line width of the line pattern could be adjusted to approximately the desired line width at any position in the X-axis direction.
  • the line width of the line pattern is to be adjusted by a size equal to or less than the staggered grid interval (the interval between the spot positions in the X and Y directions), the line width shown in FIGS.
  • the ON/OFF state of the micromirror 10a of the DMD 10 is controlled so that such exposure is performed. Thereby, a desired line pattern can be obtained with high accuracy.
  • FIG. 19A shows an example of measurement results of distortion of a projected image of a module included in the exposure module by test exposure or the like. Arrows at each point indicate the direction and magnitude of distortion. Distortion measurement involves exposing the substrate P using a test pattern (test exposure), detecting an image (transfer image) exposed on the substrate P, and obtaining image distortion data (distortion data) using the detection results. Including creation.
  • the average value of the distortion at points in the same non-scanning direction is calculated.
  • An example of the calculation result of the average value of distortion for each non-scanning direction is shown in FIG. 19(b).
  • the spot position for exposing a square area is devised for each position in the non-scanning direction. For example, when the average value of distortion in the X direction is 0.05 ⁇ m and in the Y direction is ⁇ 0.06 ⁇ m as shown on the left end of FIG. Three new spot positions (double black circles) are arranged on the left side and the bottom side of the zigzag exposure pattern (reference pattern), and five spot positions of the original square pattern are deleted.
  • the spot position may be changed according to the average value of the distortion, as shown in FIGS. 19(d) to 19(g).
  • the influence of distortion on exposure accuracy can be suppressed.
  • the processing can be simplified. Also, by using the average value of distortion for each non-scanning direction, it is possible to prevent, for example, a pattern extending in the scanning direction from being exposed in a jagged shape.
  • FIG. 20(a) shows an example of the measurement result of the illuminance distribution in one exposure area.
  • the following exposure is performed in order to suppress the influence of the illuminance distribution.
  • FIG. 20B shows an example of the calculation result of the average value of illuminance for each non-scanning direction.
  • FIG. 20(b) it is assumed that from the left, 1.0%, 0.4%, 0.2%, 0.0%, and 0.3% are calculated.
  • the line width becomes narrower by 50 nm when the illuminance increases by 1.0% from the condition of the photoresist, and the exposure is performed so that the line width increases as the illuminance increases.
  • the method of widening the line width is the same as in FIGS. 16(b) to 17(l).
  • the spot position is changed from the reference pattern according to the illuminance, as shown in FIGS. 20(d) to 20(g).
  • the influence of the illuminance distribution on the exposure accuracy can be suppressed.
  • the average value of the illuminance for each non-scanning direction is calculated and used for processing, so the processing can be simplified. Further, by using the average value of the illuminance for each non-scanning direction, it is possible to prevent, for example, a pattern extending in the scanning direction from being exposed in a jagged shape.
  • the substrate holder 4B that holds and moves the substrate P, the exposure modules MU(A), MU(B), and MU(C) that have the DMDs 10, the substrate and a drive control unit 304 that drives the holder 4B in the scanning direction.
  • the arrangement direction (X′ axis, Y′ axis) of the light irradiation regions in the light irradiation region group of the exposure module is inclined by an angle ⁇ k with respect to the scanning direction and the non-scanning direction.
  • the substrate holder 4B is scanned at a speed such that when the predetermined range of P is exposed, the exposure is staggered (spot positions are arranged in a staggered manner).
  • the DMD 10 has a finite number of micromirrors 10a in the scanning direction, but by exposing the pattern with a small number of pulses, it is possible to increase the possibility of exposing the desired pattern during one scan.
  • the speed of the stage can be increased, and the throughput of the exposure apparatus can be improved.
  • zigzag exposure is performed even when exposing the joint portion using two DMDs 10, so that the joint portion can be exposed with the same pattern as that for the portion other than the joint portion.
  • the DMD 10 when exposure is to be performed by shifting the line pattern by a distance smaller than the grid interval, part of the spot positions in the line pattern before being shifted is exposed outside the line pattern (outside of the direction in which the shift is desired).
  • the DMD 10 is driven so as to As a result, the line pattern can be easily exposed by being shifted by a distance smaller than the grid interval.
  • the same number of new spot positions are arranged on both sides of the original line pattern (reference pattern), and the original line Drive the DMD 10 to reduce (or not reduce) the spot positions of the pattern.
  • the line width of the line pattern can be easily exposed by a dimension smaller than the grid interval.
  • the spot position of the line pattern is changed based on the distortion of the module and the illuminance distribution so that the influence of the distortion and the illuminance distribution is suppressed. This makes it possible to easily suppress the influence of distortion and illuminance distribution on exposure accuracy.
  • NA and ⁇ are made variable
  • illumination conditions are made variable
  • OPC Optical Proximity Correction

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Afin de réaliser une exposition très précise à haut débit, le présent dispositif d'exposition comprend : un module comprenant un support de substrat qui maintient et déplace un substrat, un modulateur spatial de lumière comportant des éléments de modulation optique disposés de façon bidimensionnelle, une unité d'éclairage qui irradie le modulateur spatial de lumière avec une lumière d'éclairage, et une unité de projection qui guide la lumière d'éclairage provenant des éléments de modulation optique vers des groupes de zones d'irradiation de lumière respectifs disposés en réseau de façon bidimensionnelle sur le substrat dans une première direction et dans une seconde direction perpendiculaire à la première direction ; et une unité de commande qui entraîne le support de substrat dans une direction de balayage. Les éléments de modulation optique sont disposés de façon bidimensionnelle selon une inclinaison d'un angle prescrit θ (0° < θ < 90°) par rapport à la direction de balayage et à une direction de non balayage qui est orthogonale à la direction de balayage. Lors de l'exposition d'une étendue prescrite du substrat, l'unité de commande balaye le support de substrat à une vitesse telle qu'un agencement en quinconce est formé par des emplacements de point indiquant le centre de la lumière d'éclairage qui est émise par chacun des éléments de modulation optique et elle irradie l'étendue prescrite.　
PCT/JP2022/026201 2021-07-05 2022-06-30 Dispositif d'exposition WO2023282168A1 (fr)

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CN202280047560.5A CN117616341A (zh) 2021-07-05 2022-06-30 曝光装置
JP2023533578A JP7548441B2 (ja) 2021-07-05 2022-06-30 露光装置、制御方法、及びデバイス製造方法
US18/542,169 US20240126178A1 (en) 2021-07-05 2023-12-15 Exposure apparatus, control method, and device manufacturing method

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JP2002367900A (ja) * 2001-06-12 2002-12-20 Yaskawa Electric Corp 露光装置および露光方法
JP2003332221A (ja) * 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004146789A (ja) * 2002-08-29 2004-05-20 Pentax Corp パターン描画装置およびパターン描画方法
JP2007033973A (ja) * 2005-07-28 2007-02-08 Fujifilm Corp 露光ヘッドおよび露光装置
JP2007318069A (ja) * 2005-12-06 2007-12-06 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法、投影光学系
JP2008065094A (ja) * 2006-09-08 2008-03-21 Fujifilm Corp 描画用処理回路及び描画方法

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Publication number Priority date Publication date Assignee Title
JP6652618B2 (ja) 2018-10-11 2020-02-26 株式会社アドテックエンジニアリング 照度割合変更方法及び露光方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002367900A (ja) * 2001-06-12 2002-12-20 Yaskawa Electric Corp 露光装置および露光方法
JP2003332221A (ja) * 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004146789A (ja) * 2002-08-29 2004-05-20 Pentax Corp パターン描画装置およびパターン描画方法
JP2007033973A (ja) * 2005-07-28 2007-02-08 Fujifilm Corp 露光ヘッドおよび露光装置
JP2007318069A (ja) * 2005-12-06 2007-12-06 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法、投影光学系
JP2008065094A (ja) * 2006-09-08 2008-03-21 Fujifilm Corp 描画用処理回路及び描画方法

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JPWO2023282168A1 (fr) 2023-01-12
TW202318107A (zh) 2023-05-01

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