WO2023282150A1 - Dispositif de pulvérisation cathodique - Google Patents

Dispositif de pulvérisation cathodique Download PDF

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Publication number
WO2023282150A1
WO2023282150A1 PCT/JP2022/026009 JP2022026009W WO2023282150A1 WO 2023282150 A1 WO2023282150 A1 WO 2023282150A1 JP 2022026009 W JP2022026009 W JP 2022026009W WO 2023282150 A1 WO2023282150 A1 WO 2023282150A1
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Prior art keywords
target
gas
magnetic
sputtering apparatus
magnetic field
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PCT/JP2022/026009
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English (en)
Japanese (ja)
Inventor
清 久保田
靖典 安東
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日新電機株式会社
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Priority to KR1020237030892A priority Critical patent/KR20230142608A/ko
Priority to CN202280020050.9A priority patent/CN117043385A/zh
Publication of WO2023282150A1 publication Critical patent/WO2023282150A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Definitions

  • the present invention relates to sputtering equipment.
  • a sputtering device is a magnetron sputtering device.
  • a magnetic field is formed on the surface of the target by a magnet provided on the back surface of the target, the gas in the magnetic field is plasmatized, and ions of the plasmatized gas are made to collide with the target.
  • ions collide with the target sputtered particles are sputtered from the target, and the particles form a film on the substrate facing the target.
  • the thickness of the thin film formed on the substrate is uneven due to the density of the gas on the target.
  • An example of technology for suppressing the occurrence of this unevenness is disclosed in Japanese Unexamined Patent Application Publication No. 2002-200012.
  • a set of two targets is provided in a chamber into which a sputtering gas is introduced.
  • the sputtering apparatus of Patent Document 1 is provided with gas inlets for introducing the reactive gas from both sides of the pair of targets, and an exhaust port for exhausting the reactive gas from between the pair of targets.
  • an object of one aspect of the present invention is to realize a sputtering apparatus capable of supplying gas over the entire surface of a target.
  • a sputtering apparatus for sputtering a target in a vacuum vessel to form a film on a substrate, wherein the vacuum vessel holds the target.
  • the holding part When viewed from the vertically downward direction, the holding part includes a gas introduction part for introducing gas into the holding part and a target arrangement position where the target is arranged in the holding part, A pair of openings extending over at least a part of the periphery of the target arrangement position and provided at opposing positions across the target arrangement position for discharging the gas introduced into the holding section into the vacuum vessel. And prepare.
  • gas can be supplied over the entire surface of the target.
  • FIG. 1 is a diagram showing an overall configuration example of a sputtering apparatus according to Embodiment 1;
  • FIG. FIG. 2 is a view of the target holder according to Embodiment 1, taken along line AA in FIG. 1, and is a top view of the assembled target holder.
  • FIG. 2 is a view of the target holder according to Embodiment 1, taken along line BB in FIG. 1, and is a bottom view of the target holder in an assembled state.
  • FIG. 2 is a CC arrow view in FIG. 1 of the target holder according to Embodiment 1;
  • FIG. 2 is a DD arrow view in FIG. 1 of the target holder according to Embodiment 1.
  • FIG. 2 is a view of the target holder according to Embodiment 1, taken along line EE in FIG. 1; 3 is a cross-sectional view of the target holder according to Embodiment 1, taken along the line FF in FIG. 2.
  • FIG. FIG. 3 is a cross-sectional view along GG in FIG. 2 of the target holder according to Embodiment 1; 3 is an enlarged view of the H portion in FIG. 2 of the target holder according to Embodiment 1.
  • FIG. FIG. 8 is a cross-sectional view showing the detailed configuration inside the vacuum vessel according to Embodiment 2;
  • FIG. 11 is a view of the target holder according to Embodiment 2, taken along line II in FIG. 10, and is a bottom view of the assembled target holder.
  • 4 is a schematic diagram of a magnetic field strength adjusting plate according to Embodiments 1 and 3.
  • FIG. 1 An embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 9.
  • FIG. 1 An embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 9.
  • FIG. 1 is a diagram showing an overall configuration example of a sputtering apparatus 1 according to Embodiment 1. As shown in FIG. 1
  • the sputtering apparatus 1 is an apparatus for sputtering a target 30 in a vacuum vessel 2 into which a sputtering gas 10 is introduced to form a film on a substrate 12 .
  • the sputtering apparatus 1 includes a vacuum vessel 2 that is evacuated by an evacuation device 4 .
  • the vacuum vessel 2 is electrically grounded, and a gas 10 for sputtering is introduced therein.
  • the gas 10 is supplied from the gas source 6 to the target holder 32 via the gas introduction pipe 50 and the gas introduction section 51 while the flow rate is adjusted by the flow rate controller 8 .
  • the gas 10 is then introduced into the vacuum vessel 2 via the target holder 32 .
  • An insulating portion 43 is provided between the gas introducing portion 51 and the upper surface portion 3 of the vacuum vessel 2 and between the gas introducing portion 51 and the target holder 32 .
  • Gas 10 is, for example, argon gas.
  • the gas 10 may be a mixed gas of argon gas and active gas (for example, oxygen gas, nitrogen gas, etc.). Active gases are also referred to as reactive gases.
  • a substrate holder 14 for holding the substrate 12 is provided in the vacuum chamber 2 .
  • the sputtering apparatus 1 has a substrate bias power supply 16 .
  • a substrate bias power supply 16 applies a substrate bias voltage Vs to the substrate holder 14 .
  • the substrate bias voltage Vs may be a negative DC voltage, a negative pulse voltage, an AC voltage, or the like.
  • the substrate holder 14 may be electrically grounded when the substrate bias voltage Vs is not applied to the substrate 12 .
  • Reference numeral 40 denotes an insulating portion having a vacuum sealing function.
  • the substrate 12 is an object to be processed on which a thin film is formed by sputtered particles emitted from the target 30 .
  • a glass substrate, a semiconductor substrate, or the like is used as the substrate 12, but it is not limited to this.
  • a target holder (holding portion) 32 for holding the target 30 is provided on the upper surface portion 3 of the vacuum vessel 2 at a position facing the substrate holder 14 .
  • three target holders 32 are provided on the upper surface portion 3 .
  • the number of target holders 32 is not limited as long as at least one target holder 32 is provided on the upper surface portion 3 .
  • the target holder 32 holds the target 30 at a position facing the substrate 12 inside the vacuum vessel 2 .
  • the planar shape of the target 30 is, for example, rectangular, but is not limited to this, and may be circular or the like.
  • the material of the target 30 may be selected according to the film to be formed on the substrate 12 .
  • the target 30 is, for example, In-Ga-Zn-O (indium-gallium-zinc-oxygen) or In-Sn-Zn- It is an oxide semiconductor composed of O (indium-tin-zinc-oxygen) or the like.
  • the material of the target 30 is not limited to this.
  • a target bias power supply 34 is connected to the target 30 via a target holder 32 .
  • the target bias power supply 34 supplies (applies) a target bias voltage Vt to the target 30 .
  • the target bias voltage Vt is a voltage that draws ions (meaning positive ions in this application) in the plasma 22 to the target 30 for sputtering, and is, for example, a negative DC voltage or an AC voltage.
  • the target bias voltage Vt is an AC voltage
  • the AC voltage may be a high-frequency voltage on the order of MHz, such as 13.56 MHz.
  • the target bias voltage Vt may be a low-frequency voltage having a frequency (eg, about 10 kHz to 100 kHz) lower than the output of the high-frequency power supply 24 (eg, 13.56 MHz).
  • a frequency eg, about 10 kHz to 100 kHz
  • the output of the high-frequency power supply 24 eg, 13.56 MHz.
  • an antenna 20 is arranged inside the vacuum container 2 .
  • four antennas 20 are arranged to face each other so as to sandwich the target 30 held by the target holder 32 from both sides.
  • a high frequency power supply 24 is connected to each antenna 20 via a matching circuit 26 .
  • a matching circuit 26 is connected to one end of each antenna 20, and the other end of each antenna 20 is electrically grounded.
  • One end of the high frequency power supply 24 is also electrically grounded.
  • Reference numeral 41 denotes an insulating portion having a vacuum sealing function. Further, a high frequency power supply 24 and a matching circuit 26 may be provided for each antenna 20 respectively.
  • the high frequency power supply 24 supplies high frequency power Pr to each antenna 20 . Specifically, by supplying high-frequency power Pr to each antenna 20 in parallel, an inductively coupled plasma 22 is generated near the surface of the target 30 .
  • the frequency of the high-frequency power Pr output from the high-frequency power supply 24 is, for example, a general 13.56 MHz, but is not limited to this.
  • the sputtering apparatus 1 also includes a control device 46 .
  • the control device 46 controls each part of the sputtering apparatus 1 in an integrated manner.
  • controller 46 controls power supply from high frequency power supply 24 and target bias power supply 34 .
  • the control device 46 also controls the flow rate regulator 8 to control the flow rate of the gas 10 introduced into the vacuum vessel 2 .
  • the gas introduction pipe 50, the gas insulation pipe 501, and the gas introduction portion 51 connected to the flow rate regulator 8 are provided in each of the target holders 32, but are not shown in FIG. Also, the high-frequency power supply 24 is connected to each antenna 20 through a matching circuit 26, but the illustration thereof is omitted in FIG. Furthermore, the target bias power supply 34 is connected to the targets 30 held in each of the target holders 32, but the illustration thereof is omitted in FIG.
  • the antenna 20 is arranged in the vicinity of the target holder 32 inside the vacuum vessel 2 (specifically, in the vicinity of the surface of the target 30 held by the target holder 32).
  • the multiple antennas 20 are arranged along the sides of the rectangular target 30, for example, so as to sandwich the target 30 held by the target holder 32 from both sides. ing.
  • one antenna 20 may be arranged along one side of the target 30 .
  • each antenna 20 is connected to a matching circuit 26 .
  • Each antenna 20 may be a solid structure with a solid body, or may be a hollow structure (eg, tubular or cylindrical).
  • a water cooling structure may be employed in which cooling water passages are provided in the interior of the structure and the antennas 20 are cooled by flowing cooling water.
  • each antenna 20 may have a structure in which a capacitor is inserted in the middle of the antenna conductor.
  • the shape of the antenna 20 is not limited to the shape described above, and may be entirely bar-shaped, U-shaped, C-shaped, coil-shaped, or the like. Also, the shape of the antenna 20 may be a shape corresponding to the planar shape of the target 30 . For example, if the target 30 has a circular planar shape, the antenna 20 may have a circular planar shape.
  • the antenna 20 has a structure in which the antenna conductor is housed inside an insulating member regardless of its structure or shape.
  • the structure or shape of the antenna 20 described above is merely an example, and the antenna 20 may have any structure or shape that can generate the plasma 22 .
  • the antenna 20 is supplied with the high-frequency power Pr independently of the supply of the target bias voltage Vt to the target 30 .
  • the control device 46 independently controls the target bias power supply 34 that supplies the target bias voltage Vt to the target 30 and the high frequency power supply 24 that supplies the high frequency power Pr to the antenna 20 .
  • the target holder 32 is composed of a structural member that defines the structure of the target holder 32, a gas member that introduces the gas 10 near the target 30, and a magnetic circuit member that forms a magnetic field near the surface of the target 30. .
  • the target holder 32 is composed of an electrode member that applies voltage to the target holder 32 , an insulating member that insulates the electrode member, and a cooling member that cools the target holder 32 .
  • FIG. 2 is a view of the target holder 32 according to the first embodiment taken along line AA in FIG. 1, and is a top view of the target holder 32 in an assembled state.
  • FIG. 3 is a view of the target holder 32 according to the first embodiment taken along line BB in FIG. 1, and is a bottom view of the target holder 32 in an assembled state.
  • FIG. 4 is a view of the target holder 32 according to the first embodiment taken along line CC in FIG.
  • FIG. 5 is a view of the target holder 32 according to the first embodiment taken along line DD in FIG.
  • FIG. 6 is a view of the target holder 32 according to the first embodiment taken along line EE in FIG.
  • FIG. 7 is a cross-sectional view of the target holder 32 according to the first embodiment taken along the line FF in FIG.
  • FIG. 8 is a cross-sectional view of the target holder 32 according to the first embodiment taken along the line GG in FIG.
  • the target 30 held by the target holder 32 is omitted for convenience of explanation.
  • the target holder 32 includes a target body 321 and a backing plate 322 as structural members, as shown in FIGS. 7 and 8, for example.
  • the target body 321 is a member that defines various members of the target holder 32 .
  • the target body 321 is formed with grooves and holes for defining various members, or grooves and holes for assembling various members. Functions and configurations of various members will be described later.
  • the backing plate 322 is a plate to which the target 30 is attached. A position where the target 30 is attached (placed) on the surface of the backing plate 322 facing the substrate holder 14 is referred to as a target placement position 30a (see also FIGS. 3 and 6).
  • the backing plate 322 is arranged below the target body 321 .
  • a part of the gas member (for example, the gas discharge port 54) is formed in the backing plate 322. As shown in FIG.
  • the shape (planar shape) of the target body 321 and the backing plate 322 when viewed from the vertically downward direction may be designed according to the shape of the target 30 to be attached. For example, if the target 30 to be attached has a rectangular planar shape, the target body 321 and the backing plate 322 may be designed to have rectangular planar shapes.
  • the corners of the target body 321 and the backing plate 322 may be chamfered.
  • the planar shape of the target body 321 and the backing plate 322 is rectangular, but the corners of the target body 321 and the backing plate 322 are rounded. This shape is due to processing limitations of the upper surface portion 3 on which the target body 321 and the backing plate 322 are provided, reduction of the risk of abnormal electrical discharge occurring at the edges of the target body 321 and the backing plate 322, and the like.
  • the planar shape of the target body 321 and the backing plate 322 may be a rectangular shape in which the corners are not chamfered.
  • the planar shape of the target body 321, the planar shape of the backing plate 322 (the planar shape of the target arrangement position 30a), and the planar shape of the target 30 are expressed as rectangular, the following two Note that it has meaning. That is, in this specification, the rectangular shape includes (i) a shape in which the corners are not chamfered (rectangular shape in the usual sense), and (ii) a rectangular shape in which the corners are chamfered. included.
  • the longitudinal direction of the target body 321 and the backing plate 322 extends in the Y-axis direction (for example, the depth direction of the paper surface in FIGS. 7 and 8). That is, for example, as shown in FIG. 3, the longitudinal direction (long side) of the target placement position 30a extends in the Y-axis direction.
  • the target 30 is attached to the backing plate 322 so that the longitudinal direction (long side) of the target 30 extends in the Y-axis direction.
  • the gas members of the target holder 32 include a gas introduction pipe 50, a gas insulation pipe 501, a gas introduction portion 51, a gas passage (main passage) 52, a gas passage lid 521, and an orifice 522. , a gas branch path (branch path) 53 , and a gas discharge port (opening) 54 .
  • the gas introduction pipe 50 is a path (pipeline) for introducing the gas 10 supplied from the gas source 6 into the target holder 32, and is connected between the gas source 6 and the gas introduction section 51 (see FIG. 1). Further, as shown in FIG. 1, a flow controller 8 is provided in the middle of the gas introduction pipe 50 . Also, the gas insulation pipe 501 is a pipe for insulating the gas introduction pipe 50 and the gas introduction portion 51 .
  • the gas introduction part 51 is a path for introducing the gas 10 into the target holder 32 formed in the target body 321 and communicates with the gas introduction pipe 50 and the gas path 52 .
  • One gas introduction part 51 is provided for each target holder 32 . As shown in FIG. 2, the gas introduction part 51 is provided at the end of each target holder 32 .
  • the gas path 52 is a path formed in the target body 321 that receives the gas 10 introduced from the gas introduction section 51 and flows it to the gas branch path 53 , and communicates with the gas introduction section 51 and the gas branch path 53 .
  • the gas path 52 is provided on the upper surface side of the target body 321 and near the center in the width direction (X-axis direction) of the target body 321 when viewed from the vertically downward direction. is a path formed by extending in the longitudinal direction of (see FIG. 6).
  • the gas 10 introduced from the gas introduction part 51 is dispersed in the longitudinal direction of the target body 321 by the gas path 52 .
  • the gas path lid 521 is a lid for the gas path 52 .
  • the gas path cover 521 can reduce the possibility that the gas 10 will flow out to places other than the gas introduction part 51 and the gas branch path 53 (see FIG. 5).
  • the gas path cover 521 has an orifice 522 that allows the gas 10 from the gas introduction part 51 to flow to the gas path 52 . By providing the orifice 522 in the gas path lid 521, the gas pressure upstream of the orifice 522 can be increased.
  • the gas introducing portion 51 has a vacuum sealing function by pressing the flange portion of the gas introducing portion 51 with the insulating portion 43 .
  • the gas introduction part 51 is electrically connected to the gas path cover 521 and has the same potential as the target bias voltage Vt.
  • the gas introduction pipe 50 and the gas introduction portion 51 are insulated by a gas insulation pipe 501 . Therefore, depending on the high-frequency potential generated in the gas introduction pipe 50 and the gas introduction portion 51 and the pressure of the gas 10 in the gas introduction pipe 50 and the gas introduction portion 51 , electric discharge may occur in the gas 10 .
  • the length of the gas introduction pipe 50 is specified and the orifice 522 is provided in the gas path cover 521 so that such discharge does not occur.
  • the gas branch path 53 is a path that introduces the gas 10 introduced from the gas path 52 formed in the target body 321 to the gas discharge port 54 and communicates with the gas path 52 and the gas discharge port 54 .
  • a plurality of gas branch paths 53 are formed at opposing positions with the gas path 52 interposed therebetween in the width direction (X-axis direction) of the target body 321 (see FIG. 6).
  • one end of the gas branch path 53 extends along the longitudinal direction (Y-axis direction) of the gas path 52 and extends along the longitudinal direction (Y-axis direction) of the gas path 52 . communicates with The other end of the gas branch path 53 communicates with the gas discharge port 54 at a position on the lower surface of the target body 321 that faces the target arrangement position 30a in the width direction of the target body 321 .
  • the gas discharge port 54 is an opening formed in the backing plate 322 that discharges the gas 10 introduced from the gas branch path 53 into the interior of the vacuum vessel 2 and communicates with the gas branch path 53 .
  • a plurality of gas discharge ports 54 are provided over the entire opposing long sides of the target arrangement position 30a when viewed from the vertically downward direction (see FIG. 6). Further, in this embodiment, the plurality of gas discharge ports 54 are provided substantially evenly along each long side of the target arrangement position 30a, and the gas discharge ports 54 provided on each long side are provided so as to face each other. ing.
  • the gas 10 introduced by the gas introduction part 51 is supplied from both long sides of the target 30 to the target 30 attached to the target arrangement position 30a so as to substantially uniformly cover the entire surface of the target 30. be done. Therefore, compared to the case where the gas 10 is supplied from one side of the target 30 , the gas 10 can be supplied substantially uniformly over the entire surface of the target 30 .
  • the arrangement position and the number of the gas discharge ports 54 are not limited to the above, and may be adjusted so that the gas 10 discharged from the gas discharge ports 54 is substantially uniformly supplied to the entire surface of the target 30. .
  • the gas discharge ports 54 may be provided over both short sides of the target placement position 30a, or may be provided on each of the long and short sides of the target placement position 30a. . However, it is easier to supply the gas 10 substantially uniformly over the entire surface of the target 30 by providing it on the long side of the target arrangement position 30a.
  • the pair of gas discharge ports 54 it is not always necessary for the pair of gas discharge ports 54 to be provided so as to face each other.
  • the number of gas discharge ports 54 may differ between the opposing sides of the target arrangement position 30a.
  • the size of each opening of the gas discharge ports 54 may be different.
  • one gas outlet 54 may be provided along the side of the target 30 .
  • the gas discharge ports 54 extend over at least part of the circumference of the target arrangement position 30a and face each other across the target arrangement position 30a so that the gas 10 is supplied substantially uniformly over the entire surface of the target 30. position.
  • the thickness of the gas branch path 53 (cross-sectional area in the YZ cross section) is smaller than the thickness of the gas path 52 (cross-sectional area in the XZ cross section) (see FIGS. 6 and 7). Therefore, the gas 10 flowing through the gas branch path 53 flows less easily than the gas 10 flowing through the gas path 52 . Therefore, the pressure of the gas 10 in the gas path 52 can be increased and, as a result, the pressure can be equalized throughout the gas path 52 . Therefore, the gas 10 can be supplied to each gas branch path 53 substantially evenly. Also, the flow rate of the gas 10 introduced into the target holder 32 is adjusted to be constant.
  • the gas discharged from the gas discharge port 54 The flow velocity of gas 10 can be increased. Therefore, the gas 10 can be distributed so that the coarse and dense portions are reduced over the entire surface of the target 30 .
  • the target holder 32 includes an electrode 71 and an anode 72 as electrode members.
  • the insulating member of the target holder 32 includes an insulating bush 421 , a first insulating plate 422 and a second insulating plate 423 .
  • the electrode 71 is an electrode that inputs the target bias voltage Vt to the target holder 32 .
  • One electrode 71 is provided for each target holder 32 .
  • the electrodes 71 are provided adjacent to the gas introduction section 51 at the end of each target holder 32 .
  • Via electrode 71, target body 321, backing plate 322, and target 30 are charged to target bias voltage Vt.
  • the insulating bush 421 is a bush that insulates the bolt that fixes the target body 321 to the upper surface portion 3 .
  • a plurality of insulating bushes 421 are provided at positions facing each other with the magnetic field strength adjusting plate 61 interposed therebetween along the longitudinal direction (Y-axis direction) of the target holder 32 (see FIG. 2).
  • the first insulating plate 422 is an insulating member provided on a plane parallel to the plane on which the target 30 is provided, between the upper surface portion 3 and the target body 321 . Specifically, the first insulating plate 422 is provided between the gas path lid 521 and the first magnetic plate 63 .
  • the second insulating plate 423 is an insulating member provided between the upper surface portion 3 and the target body 321 on a plane perpendicular to the plane on which the target 30 is provided.
  • a second insulating plate 423 is provided to surround the four corners of the target body 321 .
  • the insulating bushing 421, the first insulating plate 422, and the second insulating plate 423 which are insulating members, electrically ground the target body 321 and the backing plate 322 charged to the target bias voltage Vt. It has a function of insulating from the part 3 .
  • the anode 72 is an electrode for capturing electrons (secondary electrons) generated by collision of ions on the target 30 near the target 30 together with a parallel magnetic field formed between ends of the third magnetic plate 67 to be described later. is. Thereby, the density of the plasma 22 near the target 30 can be increased. Note that the anode 72 is electrically grounded.
  • Secondary electrons from the target 30 are captured by the parallel magnetic field, so the possibility of secondary electrons entering the surface of the substrate 12 can be reduced. Therefore, the possibility that the temperature of the substrate 12 rises can be reduced. Further, by setting the magnetic field intensity of the parallel magnetic field to be small, even if the secondary electrons are not captured by the parallel magnetic field, they disappear without undergoing cyclotron motion. Secondary electrons are, for example, incident on peripheral walls or annihilated by recombination in space. Therefore, the influence of the secondary electrons on the density increase of the plasma 22 near the surface of the substrate 12 can be reduced.
  • the anode 72 is provided near the target placement position 30a and has an annular shape similar to the outer edge of the target placement position 30a.
  • the anode 72 is provided so as to cover the gas outlet 54 and the outer edge of the target 30 arranged at the target arrangement position 30a.
  • the anode 72 is provided on the target holder 32 so as to have a gap with the outer edge of the target 30 . Therefore, the gas 10 emitted from the gas outlet 54 can diffuse toward the target 30 through the gap.
  • the anode 72 prevents the third magnetic plate 67 , which will be described later, from coming into contact with the plasma 22 . Therefore, the risk of impurities being generated inside the vacuum vessel 2 due to the contact of the third magnetic plate 67 with the plasma 22 can be reduced.
  • a magnetic circuit is a circuit that generates a magnetic field, composed of a magnet and a magnetic member that is magnetized by the magnet.
  • a magnet is a substance that generates a magnetic field by magnetomotive force and flows magnetic flux to the outside of the magnet.
  • a magnetic member is a member that conducts the magnetic flux generated by a magnet.
  • the magnetic member includes a yoke (yoke), a ferromagnetic material having a high magnetic permeability such as iron, and the like.
  • a gap which is a gap, may be formed in the magnetic circuit.
  • An air gap may be formed between two magnetic members forming a magnetic circuit.
  • a substance for example, air having a magnetic permeability lower than that of the magnetic member is inserted into the air gap. Therefore, the magnetic resistance in the air gap is greater than that in the magnetic member. Therefore, by adjusting the width of the air gap (the distance between the two magnetic members) provided in the magnetic circuit, the magnetic resistance of the entire magnetic circuit can be changed.
  • the magnetic circuit member of the target holder 32 is a member forming the magnetic circuit described above, and includes a magnet 65 and a magnetic member.
  • the magnetic members include a magnetic field strength adjusting plate (magnetic adjusting member) 61, a magnetic path bolt (fixing member) 62, a first magnetic plate 63, a magnet holding portion 64, a second magnetic plate 66, a third and a magnetic plate 67 .
  • the magnetic field strength adjusting plate 61 is a magnetic member provided on the upper surface portion 3 (that is, the upper surface portion 320 of the target holder 32) exposed to the atmosphere outside the vacuum vessel 2.
  • the magnetic field strength adjusting plate 61 is a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see FIG. 2).
  • a gap 61a is formed between the pair of magnetic field strength adjusting plates 61.
  • the magnetic field strength adjusting plate 61 defines the air gap 61a.
  • the magnetic field strength adjusting plate 61 is formed with a plurality of elongated holes 61b that penetrate the magnetic path bolt 62 and extend in the width direction (X-axis direction) of the air gap 61a (see FIGS. 2 and 9).
  • 9 is an enlarged view of the H section in FIG. 2.
  • the magnetic path bolts 62 are magnetic members that fix each of the magnetic field strength adjustment plates 61 to the target holder 32 . Specifically, the magnetic field strength adjustment plate 61 is fixed to the target holder 32 by passing the magnetic path bolt 62 through the long hole 61b of the magnetic field strength adjustment plate 61 and fixing it to the first magnetic plate 63 .
  • the length in the width direction (X-axis direction) of the long hole 61b is greater than the shaft diameter of the magnetic path bolt 62. Therefore, the penetration position of the magnetic path bolt 62 in the long hole 61b is variable. That is, the fixed position of the magnetic field intensity adjustment plate 61 with respect to the target holder 32 can be changed by the length of the width direction of the long hole 61b. Therefore, by adjusting the fixing position of the magnetic field strength adjusting plate 61, the width of the air gap 61a can be adjusted.
  • the magnetic field strength adjustment plate 61 and the magnetic path bolt 62 function as an adjustment mechanism for adjusting the width of the air gap 61a.
  • both magnetic field strength adjusting plates 61 are formed with long holes 61b, but this is not the only option.
  • only one of the magnetic field strength adjusting plates 61 may be provided with the elongated hole 61 b and the other magnetic field strength adjusting plate 61 may be fixed to the upper surface portion 3 . Even in this case, the position of one magnetic field strength adjusting plate 61 relative to the other magnetic field strength adjusting plate 61 can be changed, so the width of the gap 61a can be adjusted.
  • the first magnetic plate 63 is a pair of magnetic members extending in the longitudinal direction of the target holder 32 (see FIG. 4).
  • the first magnetic plates 63 are fixed between the first insulating plate 422 and the upper surface portion 3 so as to correspond to the two magnetic field intensity adjusting plates 61 respectively.
  • the magnet holders 64 are a pair of magnetic members that hold the magnets 65 .
  • the magnet holders 64 extend in the longitudinal direction of the target holder 32, and each of the magnet holders 64 can hold a plurality of magnets 65 (see FIG. 4).
  • the magnet holding portions 64 are provided at positions facing and adjacent to the first magnetic plates 63, respectively. Note that the magnet holding portion 64 and the first magnetic plate 63 may be in contact with each other. That is, a portion for holding the magnets 65 may be provided in a portion of the first magnetic plate 63 .
  • the magnet 65 is a member having a magnetic strength (magnetomotive force) capable of magnetizing a magnetic member.
  • a semi-permanent magnet for example, is used as the magnet 65. In this case, a desired magnetic circuit can be easily configured at low cost.
  • magnets 65 magnets with different magnetic poles are used in the one magnet holding portion 64 and the other magnet holding portion 64 .
  • one magnet holding portion 64 holds an N pole magnet 65 and the other magnet holding portion 64 holds an S pole magnet 65 .
  • the second magnetic plate 66 is a pair of magnetic members provided in contact with each of the magnet holding portions 64 and extends in the longitudinal direction of the target holder 32 (see FIG. 5). Each of the second magnetic plates 66 is fixed between the second insulating plate 423 and the upper surface portion 3 .
  • the second magnetic plate 66 may be provided at a position separated from the magnet holder 64 as long as a magnetic circuit can be formed.
  • the third magnetic plate 67 is a pair of magnetic members provided in contact with each of the second magnetic plates 66 and extends in the longitudinal direction of the target holder 32 .
  • the third magnetic plate 67 is fixed between the anode 72 and the second magnetic plate 66 by a fixing member (eg, bolt) that fixes the anode 72 to the second magnetic plate 66 (see FIG. 8).
  • the third magnetic plates 67 are arranged at positions facing each other across the target 30 arranged at the target arrangement position 30a when viewed from the vertically downward direction. That is, the third magnetic plate 67 is provided so as to cover the gas discharge port 54 together with the anode 72 .
  • the magnetic field intensity adjusting plate 61 As described above, the magnetic field intensity adjusting plate 61, the magnetic path bolt 62, the first magnetic plate 63, the magnet holding portion 64, the magnet 65, the second magnetic plate 66, and the third magnetic plate 67, One magnetic circuit is formed. That is, the magnetomotive force of the magnet 65 appears at the end of each third magnetic plate 67 and a parallel magnetic field is formed between the ends of the third magnetic plate 67 .
  • the cooling member of the target holder 32 is a member that water-cools the target 30 and includes a cooling water port 81 and a cooling water path 82 .
  • the cooling water port 81 cools the target holder 32 by supplying and discharging cooling water to and from the target holder 32 . As shown in FIG. 2, a cooling water port 81 is provided for each target holder 32 . The cooling water port 81 is provided at the end of each target holder 32 opposite to the end where the gas introduction part 51 is provided. A coolant other than water may be used as the cooling water.
  • the cooling water path 82 is a U-shaped groove provided on the lower surface of the target body 321 along the longitudinal direction of the target body 321 (see FIGS. 3 and 7).
  • the cooling member cools the target holder 32 by causing the cooling water supplied from the water supply port of the cooling water port 81 to flow in a U shape and draining the water from the water outlet of the cooling water port 81 .
  • the sputtering apparatus 1 discharges the gas 10 into the vacuum vessel 2 from a plurality of gas discharge ports 54 provided in the longitudinal direction of the target holder 32 with the target placement position 30a interposed therebetween, thereby performing sputtering. conduct.
  • the anode 72 has a gap from the target 30 and is provided so as to cover the outer edge of the target 30 . That is, the anode 72 is provided below the target 30 so as to protrude toward the target 30 . Therefore, the gas 10 emitted from the gas outlet 54 is emitted onto the surface of the target 30 in the direction in which the anode 72 protrudes, that is, toward the central region of the target 30 . Therefore, the sputtering apparatus 1 can distribute the gas 10 over the entire surface of the target 30 .
  • the gas 10 can be distributed over the entire surface of the target 30 with a substantially uniform concentration. Therefore, the sputtered particles can be emitted substantially uniformly from the target 30, and the film thickness of the thin film formed on the substrate 12 can be made substantially uniform. That is, the film thickness distribution of the substrate 12 can be made uniform.
  • a plurality of target holders 32 are provided for film formation on a large substrate.
  • Each target holder 32 is provided with a plurality of gas discharge ports 54 as described above. Therefore, in each target holder 32 , the gas 10 emitted from the gas outlet 54 is supplied over the entire surface of the target 30 .
  • the flow controller 8 adjusts the total flow rate to be supplied to each gas introduction part 51, and pipes (pipes) such as each gas introduction part 51 are adjusted so that the gas 10 flows substantially uniformly in each gas introduction part 51. is designed. Therefore, in each target holder 32, the amount of gas 10 emitted from the gas outlet 54 can be made uniform.
  • each target holder 32 since the distribution of the gas 10 in each target holder 32 can be made uniform, the film thickness distribution of the substrate 12 facing each target holder 32 can be made uniform.
  • each target holder 32 may be provided with a flow controller 8 individually. Even in this case, the flow rate of the gas 10 flowing through each gas introducing portion 51 can be made uniform.
  • the sputtering apparatus 1 discharges the gas 10 to the target 30 from positions close to the target 30 on both long sides of the target 30 . Therefore, a reactive gas is introduced from both sides of a set of targets 30, and the reactive gas is exhausted from between the set of targets 30 (eg, the sputtering apparatus of Patent Document 1). can be shortened. That is, the pitch between target holders 32 can be reduced. Therefore, since the area of the substrate 12 that does not face the target 30 can be reduced, the film thickness distribution of the substrate 12 can be made more uniform.
  • one evacuation device 4 is provided in the vacuum container 2 . Also, the evacuation device 4 is provided at a position different from the substrate holder 14 provided at the center of the bottom surface of the vacuum chamber 2 . Therefore, the distances between each target holder 32 and the evacuation device 4 are different from each other. As a result, the evacuating speed differs at each target holder 32 arrangement position.
  • a flow controller 8 may be provided for each target holder 32 in order to further homogenize the distribution of the gas 10 to each target 30 .
  • the flow rate of the gas 10 can be adjusted according to the evacuation speed at the arrangement position of each target holder 32 . Therefore, the distribution of the gas 10 to each target 30 can be made uniform regardless of the arrangement position of the evacuation device 4, and as a result, the film thickness distribution of the substrate 12 can be made uniform.
  • a plurality of vacuum pipes connected to the evacuation device 4 may be arranged at symmetrical positions with respect to the group of target holders 32 .
  • the vacuum pipes may be provided on two side walls of the vacuum vessel 2 facing each other and extending along the longitudinal direction of the target holder 32 .
  • the vacuum pipes may be provided in the vicinity of the two side walls at the bottom of the vacuum container 2 . In this case, it is possible to reduce the difference in the speed of evacuation at the position where each target holder 32 is arranged, so that the distribution of the gas 10 to each target 30 can be made uniform. Similar effects can also be obtained by the configuration of Embodiment 2, which will be described later.
  • a parallel magnetic field at a position facing the entire surface of the target 30, electrons can be uniformly captured over the entire surface of the target 30.
  • a plurality of antennas 20 as described above, it is possible to generate plasma 22 so as to face the entire surface of target 30 .
  • the density of plasma 22 may be localized on the surface of target 30 . Localization of the density of the plasma 22 can be suppressed by trapping electrons by forming the parallel magnetic field. Therefore, the entire surface of the target 30 can be uniformly sputtered. Therefore, the film thickness distribution of the substrate 12 can be made uniform.
  • the electrons fly out from the target 30 over a wide range. Therefore, the farther the magnetic pole formed on the third magnetic plate 67 is from the surface of the target 30, the lower the probability of capturing electrons (capture rate, yield) and the larger the configuration of the sputtering apparatus 1 becomes.
  • the third magnetic plate 67 near the target 30 , it is possible to improve the yield of electrons and reduce the size of the sputtering apparatus 1 when the third magnetic plate 67 is provided.
  • the magnetic field strength (magnetic flux density) formed by the magnetic circuit is less than the strength at which magnetron discharge occurs. Since the plasma 22 is generated by the antenna 20 in the sputtering apparatus 1, there is no need to generate a high-strength magnetic field that causes magnetron discharge.
  • the strength of the parallel magnetic field is adjusted by the magnetic strength of the magnet 65 and the width of the gap 61a formed between the pair of magnetic field strength adjusting plates 61 .
  • the magnetic field strength adjusting plate 61 is formed with the long hole 61b extending in the width direction of the magnetic field strength adjusting plate 61 as described above. Therefore, the width of the air gap 61a can be adjusted by changing the fixing position of the magnetic field strength adjusting plate 61 by the magnetic path bolt 62 within the range of the long hole 61b. Therefore, the magnetic resistance in the air gap 61a can be adjusted, so that the magnetic resistance of the magnetic circuit can be adjusted.
  • the width of the air gap 61a may be adjusted to a width capable of forming a parallel magnetic field having a strength capable of uniformly trapping electrons over the entire surface of the target 30 .
  • the width of the gap 61a can be adjusted for each target holder 32. Therefore, electrons can be uniformly captured over the entire surface of the target 30 in each target holder 32 .
  • a substance (air in this embodiment) having a magnetic permeability different from that of the magnetic member is inserted into the air gap 61a. Therefore, by forming the air gap 61a in the magnetic circuit, it is possible to form a magnetic circuit having a magnetic resistance different from that of a magnetic circuit formed only of magnets and magnetic members.
  • the air gap 61a Since the magnetic permeability of air is smaller than that of the magnetic member, the air gap 61a has a large magnetic resistance. Therefore, the greater the width of the air gap 61a, the smaller the intensity of the parallel magnetic field and the worse the intensity distribution. If the intensity distribution of the parallel magnetic field deteriorates, the parallel magnetic field cannot be formed over the entire surface of the target 30, and there is a possibility that the electrons will be captured unevenly. Therefore, the width of the air gap 61a is set to a width that can form a parallel magnetic field at a position facing the entire surface of the target 30, taking into account the magnetic permeability of the material (here, air) that fills the air gap 61a.
  • the material here, air
  • a magnetic circuit and a gas discharge port 54 are provided inside the target holder 32 . Further, along with providing the gas outlet 54 inside the target holder 32 , the gas path 52 and the gas branch path 53 are also provided inside the target holder 32 . Therefore, since it is not necessary to build a path for the gas 10 between the target holders 32, the plurality of target holders 32 can be attached to the upper surface portion 3 so that the plurality of target holders 32 are adjacent to each other. Therefore, the sputtering device 1 can be miniaturized. In addition, by miniaturizing the sputtering apparatus 1, the area of the substrate 12 that is not opposed to the target 30 can be reduced. Therefore, the film thickness distribution of the substrate 12 can be made more uniform.
  • the distribution of the gas 10 on the surface of the target 30 can be uniformed by the position of the gas discharge ports 54 described above. That is, depending on the arrangement position, the gas 10 can be uniformly supplied over the entire surface of the target 30 . Therefore, the film thickness distribution of the substrate 12 can be made uniform. Further, by adjusting the width of the air gap 61a as described above, the strength of the parallel magnetic field can be adjusted so that electrons can be uniformly captured over the entire surface of the target 30. FIG. This adjustment can also make the film thickness distribution of the substrate 12 uniform.
  • the flow rate adjustment of the gas 10 by the flow rate regulator 8 and the arrangement position adjustment of the magnetic field intensity adjustment plate 61 are performed outside the vacuum vessel 2. It can be carried out. Therefore, the film thickness distribution of the substrate 12 can be easily adjusted without opening the vacuum vessel 2 .
  • FIG. 10 is a cross-sectional view showing the detailed configuration inside the vacuum vessel 2 according to the second embodiment.
  • FIG. 11 is a view of the target holder 32 according to the second embodiment taken along line HH in FIG. 10, and is a bottom view of the target holder 32 in an assembled state.
  • the exhaust port 55 is connected to an evacuation device that evacuates the inside of the vacuum vessel 2 and exhausts the gas 10 released from the gas discharge port 54 .
  • the exhaust port 55 is provided at a position adjacent to the target holder 32 on the upper surface portion 3 . In this embodiment, it is provided between the plurality of target holders 32 .
  • a plurality of exhaust ports 55 are provided along the longitudinal direction of the target holder 32 .
  • the exhaust port 55 By providing the exhaust port 55 in the vicinity of the target holder 32 in this manner, an air current is generated in which the gas 10 released from the gas release port 54 flows toward the exhaust port 55 . Due to the generation of this airflow, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform. In addition, since the exhaust port 55 is provided between the plurality of target holders 32, the airflow generated in each target holder 32 tends to be uniform. Therefore, it becomes easy to uniformize the distribution of the gas 10 at each target 30, and as a result, the film thickness distribution of the substrate 12 can be uniformized.
  • the exhaust port 55 may be provided along the lateral direction of the target holder 32 at a position adjacent to the target holder 32 . That is, the exhaust port 55 may be provided at least partly around the target holder 32 . The distribution of the gas 10 over the entire surface of the target 30 can be made more uniform when the exhaust port 55 is provided along the longitudinal direction of the target holder 32 . Also, the exhaust port 55 may be one opening provided along the longitudinal direction or the lateral direction of the target holder 32 .
  • only one target holder 32 may be provided inside the vacuum vessel 2 . Even in this case, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform by providing the exhaust port 55 adjacent to the target holder 32 as described above. That is, by providing the exhaust port 55 near one target holder 32, the distribution of the gas 10 over the entire surface of the target 30 can be made more uniform.
  • the vacuum evacuation device 4 may not be provided directly in the vacuum vessel 2 .
  • the vacuum exhaust device 4 may be stopped during sputtering, and exhaust may be performed only through the exhaust port 55 .
  • the gas 10 is exhausted only through the exhaust port 55 without using the evacuation device 4 . Therefore, the unevenness of the exhaust speed of the gas 10 in each target holder 32 can be reduced, so that the distribution of the gas 10 in each target 30 can be made more uniform.
  • the flow controller 8 is provided corresponding to each target holder 32, and the distribution of the gas 10 at each target 30 can be made more uniform without adjusting the flow rate of the gas 10 with each flow controller 8 with high accuracy. can be done.
  • FIG. 12 is a schematic diagram of the magnetic field strength adjustment plate 61 according to the first embodiment and the magnetic field strength adjustment plate 610 according to the third embodiment.
  • Reference numeral 1201 in FIG. 12 indicates the magnetic field strength adjustment plate 61
  • reference numeral 1202 indicates the magnetic field strength adjustment plate 610.
  • FIG. In Embodiment 1, each of the pair of magnetic field strength adjustment plates 61 is composed of one plate. Therefore, the gap 61 a formed between the magnetic field strength adjusting plates 61 has a uniform width (length L) in the longitudinal direction of the magnetic field strength adjusting plates 61 .
  • each of the pair of magnetic field strength adjustment plates 610 (magnetic adjustment members) is divided into a plurality of sections in the longitudinal direction of the magnetic field strength adjustment plates 610 .
  • the pair of magnetic field strength adjustment plates 610 is a magnetic field plate group composed of a plurality of pairs of magnetic field plates. As shown in FIG. 12 , in this embodiment, the pair of magnetic field strength adjustment plates 610 has three pairs of magnetic field plates 611 , 612 and 613 in the longitudinal direction of the magnetic field strength adjustment plates 610 .
  • the width of the air gap 61c formed by the magnetic field plate 611 of the first set is L1.
  • the width of the air gap 61d formed by the second set of magnetic field plates 612 is L2.
  • the width of the air gap 61e formed by the third set of magnetic field plates 613 is L3.
  • Magnetic field plates 611 , 612 and 613 are arranged in this order and placed on top surface 320 of target holder 32 .
  • the magnetic field plates 611 , 612 and 613 are formed with elongated holes (not shown in FIG. 12) extending in the width direction of the magnetic field strength adjusting plate 610 , similar to the magnetic field strength adjusting plate 61 .
  • the widths 61c and 61e of the gaps corresponding to the end regions of the target 30 are made narrower than the width of the gap 61d corresponding to the central region of the target 30 (L1 ⁇ L3 ⁇ L2 ).
  • the magnetic field strength in the gaps 61c and 61e can be made stronger than the magnetic field strength in the gap 61d.
  • the widths 61c, 61d and 61e may be adjusted so that the intensity of the parallel magnetic field is uniform over the entire surface of the target 30.
  • the lengths L1, L2, and L3 may be different depending on the placement of the target 30 and the like.
  • the magnetic field strength adjustment plate 610 does not necessarily need to be divided into the three sections of the magnetic field plates 611, 612 and 613, and may be divided into any number. Further, the length of the width 61a may be different at each position in the longitudinal direction of the magnetic field strength adjustment plate 61 by bending each of the pair of magnetic field strength adjustment plates 61 . For example, the shape of the magnetic field strength adjustment plate 61 may be defined such that the width 61a is maximized at the central portion of the magnetic field strength adjustment plate 61 in the longitudinal direction.
  • both of the magnetic field strength adjustment plates 610 are divided into a plurality of sections, but this is not the only option.
  • only one magnetic field strength adjustment plate 610 may be divided into a plurality of sections. Even in this case, the width of each position in the longitudinal direction of the magnetic field intensity adjustment plate 610 can be individually adjusted.
  • Embodiment 1 air is inserted into the air gap 61a as a substance having a magnetic permeability different from that of the magnetic member.
  • a substance having a magnetic permeability different from that of air may be inserted into the air gap 61a.
  • the reluctance of the magnetic circuit can be adjusted, and as a result, the strength of the parallel magnetic field can be adjusted.
  • carbon steel (magnetic permeability: 1.26 ⁇ 10 ⁇ 4 ⁇ H/m) having a magnetic permeability approximately 100 times higher than that of air (1.26 ⁇ 10 ⁇ 6 ⁇ H/m) was inserted into the air gap 61a. , the reluctance of the magnetic circuit becomes 1/100.
  • a material having a lower magnetic permeability than the magnetic member such as nonmagnetic metal (eg, aluminum) or engineering plastic (eg, PEEK (PolyEtherethErKetone)), may be inserted into the air gap 61a.
  • nonmagnetic metal eg, aluminum
  • engineering plastic eg, PEEK (PolyEtherethErKetone)
  • the magnetic field intensity adjusting plate 61 may be configured by a single plate (for example, a plate made of PEEK) without a gap instead of being configured by a pair of magnetic members.
  • the magnetic resistance of the magnetic circuit can be changed by replacing the magnetic field strength adjusting plate 61 with another magnetic field strength adjusting plate 61 having a magnetic permeability different from that of the magnetic field strength adjusting plate 61 concerned. .
  • the pair of magnets 65 are provided inside the upper surface portion 3, but the positions at which the magnets 65 are provided are not limited to these positions.
  • the magnetic field intensity adjusting plate 61 one magnet having N and S poles may be arranged on the surface of the upper surface portion 3.
  • an N-pole magnet and an S-pole magnet may be arranged on the surface of the upper surface portion 3 . In this case, the strength of the parallel magnetic field can be adjusted by exchanging the magnets.
  • ionization is performed by the plasma 22 from the antenna 20, but the present invention is not limited to this.
  • a magnetic circuit may be used to form a parallel magnetic field with a strength equal to or greater than the magnetron discharge.
  • a sputtering apparatus is a sputtering apparatus that sputters a target in a vacuum vessel to form a film on a substrate, wherein the vacuum vessel includes at least one holder that holds the target,
  • the holding section includes a gas introduction section that introduces gas into the holding section, and at least one area around the target arrangement position where the target is arranged in the holding section when the target arrangement position is viewed from a vertically downward direction. and a pair of openings that are provided at positions facing each other on both sides of the target placement position, and that discharge the gas introduced into the holding part into the vacuum vessel.
  • gas can be supplied from the periphery of the target over the entire surface of the target with a substantially uniform pressure. Therefore, unevenness in gas distribution over the entire surface of the target can be reduced. Therefore, it is possible to reduce the possibility that the thickness of the thin film formed on the substrate will vary.
  • the target arrangement position has a rectangular shape when viewed from the vertically downward direction, and the opening extends over the entire opposite sides of the target arrangement position. may be provided.
  • the gas can be supplied more uniformly over the entire surface of the target.
  • the opening may be provided over the entire opposing long sides of the target arrangement position.
  • the gas can be supplied more uniformly over the entire surface of the target.
  • the holding section includes a magnet and a magnetic member magnetized by the magnet, and the magnet and the magnetic member form a magnetic field above the target arrangement position.
  • a gap may be formed in a part of the magnetic circuit, and the part of the magnetic circuit in which the gap is formed may be provided outside the vacuum vessel.
  • the magnetic resistance of the magnetic circuit can be adjusted without opening the vacuum vessel by the gap provided outside the vacuum vessel.
  • the holding section may include an adjusting mechanism that adjusts the width of the gap.
  • the magnetic resistance of the magnetic circuit can be adjusted by adjusting the width of the air gap.
  • the adjustment mechanism includes a pair of magnetic adjustment members provided on an upper surface portion of the holding portion as part of the magnetic member and defining the gap. At least one magnetic adjustment member of the adjustment members is formed with an elongated hole extending in the width direction of the gap and passing through a fixing member that fixes the magnetic adjustment member to the holding portion as a part of the magnetic member. and a position through which the fixing member penetrates the long hole may be variable.
  • the width of the air gap can be changed by changing the through-position of the elongated hole in the magnetic adjustment member.
  • the target arrangement position has a rectangular shape when viewed from the vertically downward direction, and the pair of magnetic adjustment members extend in the longitudinal direction of the target arrangement position. At least one of the pair of magnetic adjustment members is divided into a plurality of sections along the longitudinal direction, and each of the plurality of sections is provided with the fixing member in the long hole.
  • the width of the gap may be defined by defining the penetrating position of the member.
  • the magnetic resistance of the magnetic circuit can be adjusted in the longitudinal direction of the target arrangement position.
  • a substance having a magnetic permeability different from that of the magnetic member may be inserted into the gap.
  • the magnetic resistance of the magnetic circuit can be adjusted by inserting a material having a different magnetic permeability from the magnetic member into the air gap.
  • a sputtering apparatus may include a plurality of holding parts.
  • the vacuum vessel may include a plurality of exhaust units that evacuate the interior of the vacuum vessel, and the exhaust units may be provided adjacent to the holding unit.
  • the gas distribution over the entire surface of the target can be made more uniform.
  • the holding section includes a gas path communicating between the gas introducing section and the opening, and the gas path receives the gas introduced from the gas introducing section.
  • a main path and a plurality of branch paths communicating with the main path and introducing gas in the main path to the opening, wherein the thickness of each of the plurality of branch paths is greater than the thickness of the main path. may be smaller.

Abstract

Dans la présente invention, un gaz est introduit sur la surface entière d'une cible. Dans la présente invention, un récipient sous vide (2) d'un dispositif de pulvérisation cathodique (1) est pourvu d'au moins un support de cible (32) pour maintenir une cible (30). Le support de cible est pourvu de : une partie d'introduction de gaz (51) pour introduire un gaz (10) ; et une paire d'orifices de libération de gaz (54) pour libérer le gaz dans le récipient sous vide, les orifices de libération de gaz (54) étant disposés à des positions opposées dans au moins une partie de l'environnement de la cible.
PCT/JP2022/026009 2021-07-09 2022-06-29 Dispositif de pulvérisation cathodique WO2023282150A1 (fr)

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CN202280020050.9A CN117043385A (zh) 2021-07-09 2022-06-29 溅镀装置

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JP2021114511A JP2023010398A (ja) 2021-07-09 2021-07-09 スパッタリング装置

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JPS61110763A (ja) * 1984-11-02 1986-05-29 Nec Corp スパツタリング電極
JPH02194171A (ja) * 1989-01-20 1990-07-31 Ulvac Corp マグネトロンスパッタリング源
JP2020152968A (ja) * 2019-03-20 2020-09-24 日新電機株式会社 スパッタリング装置
JP2020183550A (ja) * 2019-04-26 2020-11-12 日新電機株式会社 スパッタリング装置

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