WO2023281562A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2023281562A1 WO2023281562A1 PCT/JP2021/025264 JP2021025264W WO2023281562A1 WO 2023281562 A1 WO2023281562 A1 WO 2023281562A1 JP 2021025264 W JP2021025264 W JP 2021025264W WO 2023281562 A1 WO2023281562 A1 WO 2023281562A1
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- WIPO (PCT)
- Prior art keywords
- joined
- resin case
- semiconductor device
- heat sink
- resin
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000011347 resin Substances 0.000 claims abstract description 119
- 229920005989 resin Polymers 0.000 claims abstract description 119
- 230000002093 peripheral effect Effects 0.000 claims abstract description 32
- 238000000465 moulding Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000005304 joining Methods 0.000 claims abstract description 9
- 238000003754 machining Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 5
- 230000001629 suppression Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
Definitions
- the present disclosure relates to a semiconductor device and a method for manufacturing a semiconductor device.
- a heat-dissipating base plate (equivalent to a heat sink) and a resin housing a semiconductor chip (equivalent to a semiconductor element) are molded.
- a case (corresponding to a resin case) is joined with metal screws (see, for example, Patent Document 1).
- the thick molded portion of the resin case is the periphery of the screw hole into which the screw for joining with the heat sink is screwed. Therefore, there is a problem that various defects are induced due to molding voids generated around the screw holes formed in the resin case.
- an object of the present disclosure is to provide a technology capable of suppressing the occurrence of molding voids in a resin molding such as a resin case in a semiconductor device.
- a semiconductor device includes a heat sink, an insulating substrate arranged on an upper surface of the heat sink, a semiconductor element mounted on the upper surface of the insulating substrate, and arranged on a peripheral portion of the upper surface of the heat sink, A frame-shaped resin case extending vertically so as to surround side surfaces of the insulating substrate and the semiconductor element, and a frame-shaped resin case formed separately from the resin case so as to be detachable from the resin case and attached to the resin case. and a member to be joined made of resin which is joined to the heat sink in a closed state, and the member to be joined is formed with a screw hole into which a screw for joining to the heat sink is screwed. .
- the volume of the member to be joined is reduced compared to the volume of the resin case when the screw hole is formed in the resin case. becomes smaller.
- the member to be joined is easily filled with the resin, and the effect of thermal shrinkage is reduced, so that the formation of voids in the member to be joined is greatly suppressed.
- the resin case does not have a screw hole that becomes a thick molded part, the occurrence of molding voids in the resin case is greatly suppressed. As described above, it is possible to suppress the occurrence of molding voids in the resin case, which is a resin molded body, and the member to be joined.
- FIG. 1 is an exploded perspective view of a semiconductor device according to a first embodiment
- FIG. 2 is an exploded perspective view of the semiconductor device according to Embodiment 1 as viewed from the bottom side
- FIG. 3 is an enlarged view of a joint portion between a heat sink and a resin case in FIG. 2
- FIG. It is the perspective view which looked at the process of mounting
- It is the perspective view which looked at the process of forming a screw hole in a to-be-joined member from the bottom face side.
- It is a flow chart which shows a manufacturing method of a semiconductor device.
- FIG. 11 is an exploded perspective view of a semiconductor device according to a second embodiment;
- FIG. 13 is an exploded perspective view of the semiconductor device according to the second embodiment as viewed from the bottom side;
- FIG. 4 is a perspective view of a state before a member to be joined is attached to a resin case, as viewed from the bottom side;
- FIG. 4 is a perspective view of a state in which a member to be joined is attached to a resin case as viewed from the bottom side, and an enlarged view of a portion surrounded by a solid line;
- FIG. 1 is an exploded perspective view of the semiconductor device according to Embodiment 1.
- FIG. 2 is an exploded perspective view of the semiconductor device according to Embodiment 1 as viewed from the bottom side.
- the X direction, Y direction and Z direction are orthogonal to each other.
- the X, Y and Z directions shown in the following figures are also orthogonal to each other.
- the direction including the X direction and the ⁇ X direction, which is the direction opposite to the X direction is also referred to as the “X-axis direction”.
- the direction including the Y direction and the ⁇ Y direction, which is the direction opposite to the Y direction is also referred to as the “Y-axis direction”.
- a direction including the Z direction and the ⁇ Z direction, which is the direction opposite to the Z direction is also referred to as the “Z-axis direction”.
- the semiconductor device includes a radiator plate 1, an insulating substrate 2, a plurality of semiconductor elements 3, a resin case 4, and four members 5 to be joined.
- the heat sink 1 is a metal plate such as copper or AlSiC with good thermal conductivity.
- the heat sink 1 is formed in a rectangular shape when viewed from the top (viewed from the Z direction), and semiconductor devices are mounted on the four corners of the heat sink 1 and the central portions of the two sides extending in the X-axis direction.
- a through-hole 1b is formed through which a screw (not shown) is inserted for fixing to (not shown). Further, a through hole through which a screw 7 for joining the heat sink 1 and the member 5 to be joined is inserted is provided on the center side in the X-axis direction of the through holes 1b formed at the four corners of the heat sink 1. 1a is formed.
- the insulating substrate 2 is made of an insulating material, and is arranged in a region on the inner peripheral side of the peripheral edge portion of the upper surface (surface in the Z direction) of the heat sink 1 .
- a plurality of semiconductor elements 3 are mounted on the upper surface (surface in the Z direction) of the insulating substrate 2 .
- the semiconductor element 3 is a switching element and a diode element, and contains silicon.
- the semiconductor element 3 may contain a wide bandgap semiconductor. Wide bandgap semiconductors include silicon carbide, gallium nitride, and diamond. Note that the number of semiconductor elements 3 is not limited to a plurality, and may be one.
- the resin case 4 is made of resin, which is an insulating material.
- the resin case 4 is placed on the adhesive 6 applied to the periphery of the upper surface (Z-direction surface) of the heat sink 1, and adheres to the side surfaces (X-axis direction and Y-axis direction surfaces) of the insulating substrate 2 and the semiconductor element 3. ) and extends vertically (in the Z-axis direction).
- Four corners of the resin case 4 are formed with four curved portions 4a that are recessed in a curved shape toward the inner peripheral side.
- two curved portions 4b are formed in the central portion of the two sides of the resin case 4 extending in the X-axis direction, and the curved portions 4b are recessed toward the inner peripheral side.
- Each member 5 to be joined is made of resin, which is an insulating material.
- Each joined member 5 is formed separately from the resin case 4 so as to be detachable from the resin case 4 .
- FIG. 3 is an enlarged view of the joint between the heat sink 1 and the resin case 4 in FIG. 4(a) and 4(b) are perspective views of the process of mounting the member 5 to be joined to the resin case 4 as viewed from the bottom side (the side in the -Z direction).
- FIG. 4(a) is a perspective view of the state before the member 5 is attached to the resin case 4, viewed from the bottom side (the side in the ⁇ Z direction).
- FIG. 4(b) is a perspective view of the state in which the member 5 to be joined is attached to the resin case 4, viewed from the bottom side (the side in the ⁇ Z direction).
- pairs of protrusions 4c protruding to the inner peripheral side are formed on the inner peripheral surface of the four corners of the resin case 4.
- the pair of protrusions 4c are formed at positions sandwiching the boundary line between the curved portion 4a and two sides extending in the X-axis direction at the lower end (the end in the -Z direction) of the resin case 4.
- the member 5 to be joined is formed in a columnar shape extending in the vertical direction (Z-axis direction) and has a screw hole 5a that communicates with the through hole 1a of the radiator plate 1 .
- the screw hole 5a extends from the bottom surface (the surface in the ⁇ Z direction) to the middle portion upward (in the Z direction).
- the surface on the inner peripheral side of the joined member 5 is a curved surface, and the surface on the outer peripheral side consists of two orthogonal surfaces.
- a pair of concave portions 5b that fit into a pair of convex portions 4c are formed on the outer peripheral portion of the lower end portion (the end portion in the ⁇ Z direction) of the member 5 to be joined.
- the pair of concave portions 5b are formed on the two outer peripheral surfaces of the member 5 to be joined.
- the member 5 to be joined is attached to the periphery of the corner of the resin case 4.
- the resin case 4 is formed with a pair of protrusions 4c and the member to be joined 5 is formed with a pair of recesses 5b, when the pair of recesses 5b and the pair of protrusions 4c are fitted together, the member to be joined 5 is It has a structure in which a part does not protrude to the outer peripheral side of the resin case 4 .
- the screw 7 is inserted into the through hole 1a of the heat sink 1 from the bottom side (surface side in the -Z direction) of the heat sink 1, and the screw of the member to be joined 5 is inserted.
- the radiator plate 1 and the joined member 5 are joined by being screwed into the hole 5a.
- the radiator plate 1 and the resin case 4 are joined with the joined member 5 interposed therebetween.
- the member to be joined 5 is molded separately from the resin case 4, the volume of the member to be joined 5 is smaller than the volume of the resin case in which the screw hole is formed. As a result, the member to be joined 5 is easily filled with the resin, and the effect of thermal shrinkage is reduced, so that molding voids generated in the member to be joined 5 are greatly suppressed. On the other hand, since the resin case 4 does not have a screw hole as a thick molded portion, the occurrence of molding voids in the resin case 4 is greatly suppressed.
- the resin case 4 is formed with a pair of protrusions 4c and the member to be joined 5 is formed with a pair of recesses 5b.
- a pair of protrusions may be formed on 5 .
- the screw hole 5a extends from the bottom surface (the surface in the -Z direction) of the member 5 to be welded to the middle part of the upper part (in the Z direction), surface) to the upper surface (surface in the Z direction).
- FIG. 5 is a perspective view of the step of forming the screw holes 5a in the member 5 to be joined, viewed from the bottom side (surface side in the -Z direction).
- FIG. 5(a) is a perspective view of the state before the screw hole 5a is formed in the joined member 5, viewed from the bottom side (the side in the ⁇ Z direction).
- FIG. 5(b) is a perspective view showing the screw hole 5a formed in the joined member 5 as viewed from the bottom side (the side in the ⁇ Z direction).
- FIG. 5(c) is a perspective view of the state in which the screw hole 5a is formed in the joined member 5, viewed from the bottom side (the side in the ⁇ Z direction).
- the screw holes 5a may be formed when the member to be joined 5 is molded, or may be formed by machining after the member to be joined 5 is molded as shown in FIGS. 5(a) to 5(c).
- FIG. 6 is a flow chart showing a method of manufacturing a semiconductor device.
- the screw holes 5a are formed after the member to be joined 5 is molded will be described.
- step S1 the resin case 4 is molded (step S1).
- step S2 the member to be joined 5 without the screw hole 5a is molded (step S2). Since the molding of the resin case 4 and the molding of the member to be joined 5 are performed using different molds, these steps may be performed at the same time, or the resin case 4 may be molded after the member to be joined 5 is molded. Molding may take place.
- step S3 screw holes 5a are formed in the joined member 5 by machining.
- step S4 the semiconductor element 3 is bonded to the insulating substrate 2 with a bonding material (not shown)
- step S5 the insulating substrate 2 is bonded to the upper surface (surface in the Z direction) of the heat sink 1 with a bonding material (not shown).
- step S6 the adhesive 6 is applied to the peripheral portion of the upper surface (surface in the Z direction) of the heat sink 1 (step S6).
- step S7 After the members 5 to be joined are attached to the resin case 4 (step S7), the resin case 4 is placed on the adhesive 6 applied to the heat sink 1, and the heat sink 1 and the resin case 4 are bonded with the adhesive. 6 (step S8).
- the screw 7 is inserted into the through hole 1a of the heat sink 1 from the bottom side (surface side in the -Z direction) of the heat sink 1, and the screw of the member to be joined 5 is inserted.
- the radiator plate 1 and the member to be joined 5 are joined with the screws 7 by screwing them into the holes 5a.
- the radiator plate 1 and the resin case 4 are joined via the joined member 5 (step S9).
- the semiconductor device includes heat sink 1, insulating substrate 2 arranged on the upper surface (surface in the Z direction) of heat sink 1, and upper surface (surface in the Z direction) of insulating substrate 2. ) and the peripheral portion of the upper surface (Z-direction surface) of the heat sink 1 so as to surround the insulating substrate 2 and the side surfaces (X-direction and Y-direction surfaces) of the semiconductor element 3.
- a frame-shaped resin case 4 extending in the vertical direction (Z-axis direction) is formed separately from the resin case 4 so as to be attachable to and detachable from the resin case 4 .
- a member to be joined 5 made of resin is joined, and a screw hole 5 a into which a screw 7 for joining to the heat sink 1 is screwed is formed in the member to be joined 5 .
- the volume of the member to be joined 5 can be reduced compared to the volume of the resin case when the screw hole is formed in the resin case. becomes smaller.
- the member to be joined 5 is easily filled with the resin, and the effect of thermal shrinkage is reduced, so that molding voids generated in the member to be joined 5 are greatly suppressed.
- the resin case 4 does not have a screw hole that becomes a thick molded portion, the occurrence of molding voids in the resin case 4 is greatly suppressed. As described above, it is possible to suppress the occurrence of molding voids in the resin case 4 and the member 5 to be joined, which are resin moldings.
- the inner peripheral surface of the resin case 4 is formed with a convex portion 4c that protrudes inward
- the outer peripheral portion of the joined member 5 is formed with a concave portion 5b that fits into the convex portion 4c. Therefore, it is possible to prevent a part of the joined member 5 from protruding to the outer peripheral side of the resin case 4 when the concave portion 5b and the convex portion 4c are fitted together.
- the semiconductor element 3 includes a wide bandgap semiconductor, high-temperature operation of the semiconductor device is possible. If there are voids in the resin case 4 during high-temperature operation, partial discharge occurs and leads to dielectric breakdown. The occurrence of partial discharge due to is suppressed, and the insulation performance is improved. Further, by adopting a wide bandgap semiconductor for the semiconductor element 3, the size of the semiconductor element 3 can be reduced, so that the size of the semiconductor device can be reduced by saving space.
- the method of manufacturing the semiconductor device includes the step (a) of molding the resin case 4, the step (b) of molding the member to be bonded 5 as a separate member from the resin case 4, and the step (b) of molding the member to be bonded 5.
- a step (e) of joining the heat sink 1 and the resin case 4 is provided.
- the structure of the member to be joined 5 as a resin molded body is simplified as compared with the case where the member to be joined 5 is formed with the screw hole 5a formed. . Therefore, the filling rate of the resin in the member to be joined 5 is improved, and the formation of voids in the member to be joined 5 can be further suppressed.
- FIG. 7 is an exploded perspective view of the semiconductor device according to the second embodiment.
- FIG. 8 is an exploded perspective view of the semiconductor device according to the second embodiment viewed from the bottom side (the surface side in the ⁇ Z direction).
- FIG. 9 is a perspective view of the state before the joined member 5 is attached to the resin case 4, viewed from the bottom side (the side in the ⁇ Z direction).
- FIG. 10 is a perspective view of the state in which the member to be joined 5 is attached to the resin case 4 as viewed from the bottom side (the surface side in the ⁇ Z direction), and an enlarged view of the portion surrounded by the solid line.
- the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
- the semiconductor device includes a radiator plate 1, an insulating substrate 2, a plurality of semiconductor elements 3, a resin case 4A, and four joined members 5A. I have it.
- the resin case 4A has, in addition to the structure of the resin case 4, a guide groove 4d extending in the vertical direction (Z-axis direction). 4 d of guide grooves are formed in the peripheral part of a pair of the convex part 4c in the internal peripheral surface of the resin case 4A. More specifically, the guide groove 4d is formed at a position adjacent to the convex portion 4c formed on two sides extending in the X-axis direction on the inner peripheral surface of the resin case 4A.
- the member-to-be-joined 5A is provided with a guide protrusion 5c fitted so as to be movable along the extending direction of the guide groove 4d.
- the guide projections 5c are formed around the recesses 5b on the outer periphery of the joined member 5A. More specifically, the guide protrusion 5c is formed at a position adjacent to the recess 5b that fits with the protrusion 4c extending in the X-axis direction on the two sides of the outer peripheral portion of the joined member 5A.
- the guide projection 5c of the member to be joined 5A is fitted into the upper end side (end side in the Z direction) of the guide groove 4d in the resin case 4A. It is moved along the extension direction.
- one guide groove 4d and one guide projection 5c are formed in the resin case 4A and the joined member 5A.
- the other guide groove 4d is formed at a position adjacent to the convex portion 4c formed on the curved portion 4a side of the inner peripheral surface of the resin case 4A.
- the other guide protrusion 5c is formed at a position adjacent to the recess 5b that fits with the protrusion 4c on the curved portion 4a side in the outer peripheral portion of the joined member 5A.
- the guide groove 4d extending in the vertical direction (Z-axis direction) is formed around the protrusion 4c on the inner peripheral surface of the resin case 4A.
- the guide groove 4d functions as a guide when mounting the joined member 5A to the resin case 4A. Further, since the number of fitting points between the resin case 4A and the joined member 5A is increased compared to the case of the first embodiment, the strength against torsion when the screw 7 is attached is improved.
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Abstract
Description
<半導体装置の構成>
実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置の分解斜視図である。図2は、実施の形態1に係る半導体装置を底面側から視た分解斜視図である。
次に、半導体装置の製造方法について説明する。図6は、半導体装置の製造方法を示すフローチャートである。ここでは、被接合部材5の成形後にネジ穴5aを形成する場合について説明する。
以上のように、実施の形態1に係る半導体装置は、放熱板1と、放熱板1の上面(Z方向の面)に配置された絶縁基板2と、絶縁基板2の上面(Z方向の面)に搭載された半導体素子3と、放熱板1の上面(Z方向の面)における周縁部に配置され、絶縁基板2および半導体素子3の側面(X方向およびY方向の面)を囲むように上下方向(Z軸方向)に延びる枠状の樹脂ケース4と、樹脂ケース4とは別体として樹脂ケース4に着脱可能なように形成され、樹脂ケース4に装着された状態で放熱板1と接合された樹脂製の被接合部材5とを備え、被接合部材5には、放熱板1と接合するためのネジ7が螺合されるネジ穴5aが形成されている。
<半導体装置の構成>
次に、実施の形態2に係る半導体装置について説明する。図7は、実施の形態2に係る半導体装置の分解斜視図である。図8は、実施の形態2に係る半導体装置を底面側(-Z方向の面側)から視た分解斜視図である。図9は、樹脂ケース4に被接合部材5が装着される前の状態について底面側(-Z方向の面側)から視た斜視図である。図10は、樹脂ケース4に被接合部材5が装着された状態について底面側(-Z方向の面側)から視た斜視図と実線で囲んだ部分の拡大図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
以上のように、実施の形態2に係る半導体装置では、樹脂ケース4Aの内周面における凸部4cの周辺部には、上下方向(Z軸方向)に延びるガイド溝4dが形成され、被接合部材5Aの外周部における凹部5bの周辺部には、ガイド溝4dの延在方向に沿って移動可能なように嵌まるガイド凸部5cが形成されている。
Claims (5)
- 放熱板と、
前記放熱板の上面に配置された絶縁基板と、
前記絶縁基板の上面に搭載された半導体素子と、
前記放熱板の上面における周縁部に配置され、前記絶縁基板および前記半導体素子の側面を囲むように上下方向に延びる枠状の樹脂ケースと、
前記樹脂ケースとは別体として前記樹脂ケースに着脱可能なように形成され、前記樹脂ケースに装着された状態で前記放熱板と接合された樹脂製の被接合部材と、を備え、
前記被接合部材には、前記放熱板と接合するためのネジが螺合されるネジ穴が形成された、半導体装置。 - 前記樹脂ケースの内周面には、内周側に突出する凸部が形成され、
前記被接合部材の外周部には、前記凸部と嵌合する凹部が形成された、請求項1に記載の半導体装置。 - 前記樹脂ケースの前記内周面における前記凸部の周辺部には、上下方向に延びるガイド溝が形成され、
前記被接合部材の前記外周部における前記凹部の周辺部には、前記ガイド溝の延在方向に沿って移動可能なように嵌まるガイド凸部が形成された、請求項2に記載の半導体装置。 - 前記半導体素子は、ワイドバンドギャップ半導体を含む、請求項1から請求項3のいずれか1項に記載の半導体装置。
- 請求項1に記載の半導体装置を製造する半導体装置の製造方法であって、
(a)前記樹脂ケースを成形する工程と、
(b)前記被接合部材を前記樹脂ケースとは別体として成形する工程と、
(c)前記被接合部材に前記ネジ穴を機械加工で形成する工程と、
(d)前記樹脂ケースに前記被接合部材を装着する工程と、
(e)前記放熱板と前記被接合部材とを前記ネジにより接合することで、前記放熱板と前記樹脂ケースとを接合する工程と、
を備えた、半導体装置の製造方法。
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JP2014138080A (ja) * | 2013-01-17 | 2014-07-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2014179376A (ja) * | 2013-03-13 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2019102537A1 (ja) * | 2017-11-22 | 2019-05-31 | 三菱電機株式会社 | 半導体装置 |
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JP2014138080A (ja) * | 2013-01-17 | 2014-07-28 | Mitsubishi Electric Corp | 半導体装置 |
JP2014179376A (ja) * | 2013-03-13 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2019102537A1 (ja) * | 2017-11-22 | 2019-05-31 | 三菱電機株式会社 | 半導体装置 |
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