WO2023243666A1 - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法 Download PDF

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Publication number
WO2023243666A1
WO2023243666A1 PCT/JP2023/022112 JP2023022112W WO2023243666A1 WO 2023243666 A1 WO2023243666 A1 WO 2023243666A1 JP 2023022112 W JP2023022112 W JP 2023022112W WO 2023243666 A1 WO2023243666 A1 WO 2023243666A1
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WIPO (PCT)
Prior art keywords
adhesive
component
less
mass
wafer
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Ceased
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PCT/JP2023/022112
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English (en)
French (fr)
Japanese (ja)
Inventor
山田晃平
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Kao Corp
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Kao Corp
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Priority to KR1020247038145A priority Critical patent/KR20250024907A/ko
Priority to CN202380044076.1A priority patent/CN119301742A/zh
Publication of WO2023243666A1 publication Critical patent/WO2023243666A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • Patent Document 1 describes a rework solvent (cleaning agent) for cleaning an adhesive layer adhered to a peeled semiconductor circuit forming substrate or a support substrate, which contains at least an amine solvent and a specific Rework solvents containing glycol ether solvents are disclosed. And in the Examples, a rework solvent consisting of monoethanolamine, dipropylene glycol dimethyl ether and N-methyl-2-pyrrolidone is disclosed.
  • a semiconductor which is a cleaning composition containing an amine (component A) and a glycol ether (component B) represented by the following formula (I), and in which the content of component A is 35% by mass or more and 85% by mass or less
  • the present invention relates to a method for manufacturing a substrate.
  • RO-(EO)n-H (I) In the above formula (I), R represents an alkyl group having 1 or more and 4 or less carbon atoms, EO represents an ethyleneoxy group, and n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • R represents an alkyl group having 1 or more and 4 or less carbon atoms
  • EO represents an ethyleneoxy group
  • n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • the present disclosure relates to a cleaning composition for removing adhesive remaining on a heat-treated wafer, which comprises an alkanolamine (component A) and a glycol ether represented by the following formula (I) ( Component B), and the content of Component A is 35% by mass or more and 85% by mass or less.
  • RO-(EO)n-H (I)
  • R represents an alkyl group having 1 or more and 4 or less carbon atoms
  • EO represents an ethyleneoxy group
  • n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • the present disclosure provides an adhesive remover for removing adhesive remaining on a heat-treated wafer, which comprises an alkanolamine (component A) and a glycol ether represented by the following formula (I) ( Component B), and the content of Component A is 35% by mass or more and 85% by mass or less.
  • RO-(EO)n-H (I) In the above formula (I), R represents an alkyl group having 1 or more and 4 or less carbon atoms, EO represents an ethyleneoxy group, and n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • the adhesive remaining on the wafer is removed using an adhesive remover.
  • the adhesive removing agent contains an alkanolamine (component A) and a glycol ether (component B) represented by the following formula (I), and the content of component A is 35% by mass or more. % by mass or less.
  • R represents an alkyl group having 1 or more and 4 or less carbon atoms
  • EO represents an ethyleneoxy group
  • n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • FIG. 1 is a flowchart showing each step of the method for manufacturing a semiconductor substrate according to the present disclosure.
  • FIG. 2 is a schematic diagram for explaining each step in an embodiment of the method for manufacturing a semiconductor substrate of the present disclosure.
  • an adhesive cleaning composition with excellent adhesive removability a method for manufacturing and cleaning a semiconductor substrate using the adhesive removal agent, and an adhesive cleaning composition with excellent adhesive removability. products and adhesive removers.
  • the present disclosure provides an adhesive cleaning composition with excellent adhesive removal properties, a method for manufacturing and cleaning a semiconductor substrate using the adhesive removal agent, and an adhesive cleaning composition with excellent adhesive removal properties.
  • Compositions and adhesive removers are provided.
  • the present disclosure provides a cleaning composition or an adhesive remover containing an alkanolamine whose content is 35% by mass or more and 85% by mass or less and a specific glycol ether, and which is heat-treated at a temperature of 230°C or higher. This is based on the knowledge that adhesive remaining on wafers can be efficiently removed.
  • the present disclosure includes (1) a step of bonding a wafer to a fixing member with an adhesive, (2) a step of polishing the back side of the bonding surface of the wafer to the fixing member, and (3) a step of polishing the wafer. (4) separating the processed wafer from the fixing member; and (5) removing adhesive remaining on the separated wafer with a cleaning agent.
  • the step (3) includes heating the wafer fixed to the fixing member with an adhesive at a temperature of 230° C. or higher, and the cleaning agent used in the step (5) is alkanolamine.
  • the present disclosure provides a cleaning composition for removing adhesive remaining on a heat-treated wafer, comprising an alkanolamine (component A) and a glycol ether represented by the above formula (I). (Component B), and the content of Component A is 35% by mass or more and 85% by mass or less (hereinafter also referred to as "cleaning composition of the present disclosure”).
  • the present disclosure provides an adhesive remover for removing adhesive remaining on a heat-treated wafer, which comprises an alkanolamine (component A) and a glycol ether represented by the above formula (I). (Component B), and the content of component A is 35% by mass or more and 85% by mass or less (hereinafter also referred to as "the adhesive removing agent of the present disclosure").
  • a high-quality semiconductor substrate can be obtained with a high yield by using a cleaning composition that has excellent adhesive removability.
  • a cleaning composition and an adhesive remover that are excellent in adhesive removability.
  • glycol ether (component B) with high penetrating power acts on the adhesive whose hardness has decreased, causing swelling and dissolution of the adhesive to proceed, and the adhesive to be removed. Furthermore, when the content of glycol ether (component B) and the mass ratio (A/B) of the content of alkanolamine (component A) to the content of glycol ether (component B) are specific values, It is believed that the permeability of A) and glycol ether (component B) increases synergistically. However, the present disclosure does not need to be interpreted as being limited to this mechanism.
  • the cleaning composition and adhesive remover of the present disclosure are used, in one or more embodiments, to remove adhesive from a wafer to which adhesive has adhered. That is, the present disclosure, in one aspect, relates to the use of the cleaning compositions and adhesive removers of the present disclosure to remove adhesive from a wafer with adhesive deposited thereon.
  • An example of the wafer is a semiconductor substrate. Examples of the semiconductor substrate include wafers such as silicon wafers, germanium wafers, gallium-arsenide wafers, gallium-phosphorus wafers, and gallium-arsenide-aluminum wafers. Further, in one or more embodiments, the wafer may be a substrate having pads and/or lands that are parts for bonding and mounting.
  • Examples of the adhesive include adhesives that can bond the wafer to the fixing member, have durability that can withstand polishing and processing steps, and can easily separate the wafer from the fixing member in the separation process.
  • Examples of the adhesive include polyimide-based, polysiloxane-based, acrylic-based, or methacrylic-based adhesives (adhesive compositions).
  • FIG. 1 is a flowchart showing each step of the method for manufacturing a semiconductor substrate according to the present disclosure.
  • FIG. 2 is a schematic diagram for explaining each step in an embodiment of the method for manufacturing a semiconductor substrate of the present disclosure.
  • Step (1) is a step (adhesion step) of bonding the wafer 3 to the fixing member 1 with the adhesive 2 (step S1).
  • step (1) includes a step (1-1) of applying an adhesive to the surface of the wafer or the fixing member to form an adhesive layer, and a step (1-1) of coating the wafer and the fixing member with the adhesive layer. It includes a step (1-2) of bonding through a heat treatment and bonding.
  • Examples of the wafer used in step (1) include silicon wafers and glass wafers with a diameter of 100 to 500 mm and a thickness of 500 to 2000 ⁇ m.
  • the fixing member used in step (1) is not particularly limited, but includes, for example, a substrate such as a silicon wafer or a glass plate with a diameter of 100 to 500 mm and a thickness of 500 to 20,000 ⁇ m.
  • the adhesive used in step (1) must be able to bond the wafer to the fixing member, have durability that can withstand polishing and processing steps, and allow the wafer to be easily separated from the fixing member in the separation step.
  • an adhesive for example, an adhesive used in the manufacturing process of 3DIC can be mentioned.
  • adhesives used in the 3DIC manufacturing process include polyimide-based, polysiloxane-based, acrylic-based, or methacrylic-based adhesives (adhesive compositions). Specific examples include the adhesive composition described in JP-A-2021-161196.
  • the adhesive composition used in step (1) contains a polysiloxane, an acrylic ester, or a methacrylic ester as an adhesive component, and further contains a platinum group metal catalyst and a release agent. It may also contain components, solvents, etc.
  • the viscosity of the adhesive composition used in step (1) can be adjusted by appropriately changing the concentration of the contained components, etc., depending on the coating method, film thickness, etc.
  • the method for applying the adhesive is not particularly limited, but examples include spin coating.
  • the thickness of the coating layer (adhesive layer) of the adhesive (adhesive composition) is, for example, 5 to 500 ⁇ m.
  • the temperature of the heat treatment is, for example, 80° C. or higher, and preferably 150° C. or lower from the viewpoint of suppressing excessive curing of the adhesive.
  • the heat treatment time is, for example, 30 seconds or more, and is preferably 10 minutes or less from the viewpoint of suppressing deterioration of the adhesive layer and other members. Heating can be performed using a hot plate, oven, or the like.
  • the thickness of the adhesive layer after heat treatment is, for example, 5 ⁇ m or more and 100 ⁇ m or less.
  • Step (2) is a step (polishing step) of polishing the back surface 3a of the adhesive surface (opposite surface to the adhesive surface) of the wafer 3 to the fixing member 1 (step S2).
  • the polishing method include mechanical polishing using abrasive grains, chemical mechanical polishing, and the like.
  • the thickness of the polished wafer (thinned wafer) is preferably 200 ⁇ m or less, for example, 50 ⁇ m to 200 ⁇ m.
  • Step (3) is a step (processing step) of processing the polished surface (back surface of the thinned wafer) 3a of the wafer 3 (step S3).
  • step (3) includes an electrode forming step, a metal wiring forming step, a protective film forming step, and the like.
  • metal sputtering to form electrodes wet etching, resist coating, pattern formation, resist peeling, dry etching, metal plating formation, silicon etching to form through-silicon vias (TSV), and oxide film formation on silicon surfaces.
  • TSV through-silicon vias
  • oxide film formation on silicon surfaces examples of conventional processing steps include the following.
  • step (3) the processing is performed at a high temperature of 150° C. or higher in one or more embodiments.
  • the processing includes heat-treating the wafer fixed to the fixing member with an adhesive at a temperature of 230° C. or higher.
  • the processing may include, for example, heat treatment at 250° C. or higher and 350° C. or lower.
  • Step (4) is a step (separation step) of separating the processed wafer 3 and the fixing member 1 (step S4).
  • the separation method include solvent peeling, laser peeling, mechanical peeling, and the like.
  • Step (5) is a step (cleaning step) of removing the adhesive (adhesive residue) 2a remaining on the separated wafer 3 with a cleaning agent (step S5).
  • the cleaning agent used in step (5) include the cleaning composition or adhesive remover of the present disclosure described below.
  • the cleaning method (adhesive removal method) in the cleaning step include immersion cleaning.
  • the temperature of the cleaning agent is preferably 20° C. or more and 70° C. or less, or 40° C. or more and 70° C. or less, and the immersion time is preferably 1 minute or more and 60 minutes or less.
  • the cleaning agent is subjected to ultrasonic vibration, for example, 25 to 50 kHz is preferable, and 35 to 45 kHz is more preferable from the viewpoint of suppressing damage to the wafer.
  • the wafer after cleaning may be rinsed with water or alcohol, and then dried.
  • the cleaning composition and adhesive remover of the present disclosure are used as a cleaning agent or adhesive remover for removing adhesive remaining on heat-treated wafers.
  • component A The cleaning composition and adhesive remover of the present disclosure contain an alkanolamine (amino alcohol) (hereinafter also referred to as "component A").
  • Component A may include, for example, a compound represented by the following formula (II).
  • Component A may be used alone or in combination of two or more.
  • component A is a compound that does not have a branched carbon chain.
  • the content of the compound represented by the following formula (II) in component A is preferably 80% by mass or more, more preferably 90% by mass or more, and still more preferably 100% by mass.
  • R 1 represents a linear alkanol group having 2 to 4 carbon atoms
  • R 2 represents a linear alkanol group having 2 to 4 carbon atoms, a methyl group, or a hydrogen atom
  • R 3 represents a methyl group or a hydrogen atom.
  • R 1 is preferably a linear alkanol group having 2 or 3 carbon atoms from the viewpoint of improving the removability of the adhesive.
  • R 2 is preferably a hydrogen atom.
  • R 3 is preferably a hydrogen atom.
  • Component A includes, for example, monoethanolamine, N-methylmonoethanolamine, N-ethylmonoethanolamine, diethanolamine, N-dimethylmonoethanolamine, N-methyldiethanolamine, N-diethylmonoethanolamine, N-ethyldiethanolamine. , N-( ⁇ -aminoethyl)ethanolamine, and N-( ⁇ -aminoethyl)diethanolamine.
  • alkyl monoalkanolamine or monoalkanolamine is preferred, and monoethanolamine is more preferred.
  • R represents an alkyl group having 1 or more and 4 or less carbon atoms
  • EO represents an ethyleneoxy group
  • n is the number of moles of EO added and is a number of 1 or more and 3 or less.
  • component B from the viewpoint of improving the removability of the adhesive, (poly)ethylene glycol monoalkyl ether having an alkyl group having 1 to 4 carbon atoms is preferable, and ethylene glycol monoalkyl ether having an alkyl group having 1 to 4 carbon atoms is preferable. At least one selected from glycol monoalkyl ether, diethylene glycol monoalkyl ether, and triethylene glycol monoalkyl ether is more preferred, and at least one selected from ethylene glycol monobutyl ether (BG) and diethylene glycol monobutyl ether (BDG) is even more preferred. .
  • BG ethylene glycol monobutyl ether
  • BDG diethylene glycol monobutyl ether
  • the mass ratio A/B of the content of component A to the content of component B is preferably 0.6 or more, more preferably 0.625 or more, and even more preferably 0.65 or more. And, from the viewpoint of detergency and stability, it is preferably 5.5 or less, more preferably 3 or less, and even more preferably less than 1. More specifically, the mass ratio A/B is preferably 0.6 or more and 5.5 or less, more preferably 0.625 or more and 3 or less, and even more preferably 0.65 or more and less than 1.
  • the cleaning composition and adhesive remover of the present disclosure preferably do not contain water or have a water content of 15% by mass or less.
  • water hereinafter also referred to as "component C"
  • component C includes ion exchange water, RO water, distilled water, pure water, ultrapure water, and the like.
  • the content of component C in the cleaning composition and adhesive remover of the present disclosure is equal to the amount of component A, component B, and the amount described below. It can be the remainder after removing optional components.
  • the content of the nonionic surfactant in the cleaning composition and adhesive remover of the present disclosure is preferably less than 1% by mass, more preferably 0.5% by mass or less, and even more preferably 0.1% by mass. % or less, more preferably 0% by mass.
  • the nonionic surfactant include those obtained by adding arbitrary ethylene oxide or propylene oxide to an aliphatic hydrocarbon or aromatic hydrocarbon having 8 to 10 carbon atoms.
  • the cleaning composition and adhesive remover of the present disclosure can be substantially free of aliphatic hydrocarbons having 9 to 16 carbon atoms.
  • the cleaning composition and adhesive remover of the present disclosure can be substantially free of glyoxylic acid.
  • the content of glyoxylic acid in the cleaning compositions and adhesive removers of the present disclosure is preferably less than 0.05% by weight, preferably 0.01% by weight or less, and more preferably 0% by weight.
  • the cleaning composition and adhesive remover of the present disclosure can be substantially free of N,N-dimethylacetamine (DMAC).
  • DMAC N,N-dimethylacetamine
  • the content of N,N-dimethylacetamine (DMAC) in the cleaning compositions and adhesive removers of the present disclosure is preferably less than 0.1% by weight, preferably 0.01% by weight or less, and Preferably it is 0% by mass.
  • the cleaning composition and adhesive remover of the present disclosure can be substantially free of quaternary ammonium hydroxide.
  • the content of quaternary ammonium hydroxide in the cleaning composition and adhesive remover of the present disclosure is preferably less than 1% by weight, preferably 0.1% by weight or less, and more preferably 0% by weight. be.
  • the present disclosure provides a step of removing adhesive remaining on the wafer with a cleaning agent after separating a wafer that has been bonded to a fixing member with an adhesive and has undergone heat treatment at a temperature of 230° C. or higher from the fixing member.
  • the cleaning agent contains an alkanolamine (component A) and a glycol ether (component B) represented by the above formula (I), and the content of component A is 35% by mass or more 85 % by mass or less (hereinafter also referred to as "the cleaning method of the present disclosure").
  • the cleaning agent is the cleaning composition or adhesive remover of the present disclosure described above.
  • the cleaning method (adhesive removal method) in the cleaning step of the cleaning method of the present disclosure includes the same method as the cleaning method (removal method) of step (5) in the semiconductor substrate manufacturing method of the present disclosure described above.
  • the wafer that has been bonded to a fixing member with an adhesive and has undergone heat treatment at a temperature of 230°C or higher is preferably subjected to a heat treatment at a temperature of 270°C or higher. It's something that has gone through a lot of time.
  • heat treatment at a temperature of 230°C or higher is for joining a circuit-formed substrate with a device such as a semiconductor chip and another circuit-formed substrate using solder or metal fine particles.
  • the present disclosure relates to a kit for use in either the cleaning method of the present disclosure or the semiconductor substrate manufacturing method of the present disclosure (hereinafter also referred to as "the kit of the present disclosure").
  • the kit of the present disclosure is a kit for producing the cleaning composition or adhesive remover of the present disclosure. According to the kit of the present disclosure, it is possible to obtain a cleaning composition or an adhesive remover that is excellent in adhesive removability.
  • the kit of the present disclosure includes a solution containing component A (first solution) and a solution containing component B (second solution) in a state where they are not mixed with each other, A kit (two-component cleaning composition) in which the first liquid and the second liquid are mixed at the time of use is included. After the first liquid and the second liquid are mixed, they may be diluted with water (component C) if necessary. Each of the first liquid and the second liquid may contain the above-mentioned optional components as necessary.
  • the cleaning rate is calculated by visually observing the presence or absence of adhesive remaining on the test piece, and the cleaning performance (adhesive removability) is evaluated based on the following evaluation criteria. The results are shown in Table 1.
  • Cleaning rate (%) (area from which adhesive was removed after cleaning) / (area of test piece) x 100 ⁇ Evaluation criteria>
  • C In visual observation, residue area is 25% or more and less than 40%
  • D In visual observation, the residue area is 40% or more and less than 50%.E: The residue area is 50% or more in visual observation.
  • the test piece is 30 mm x 30 mm in size and has adhesive residue on the silicon wafer. .
  • the adhesive residue was 20 ⁇ m thick and was present on the entire surface of the test piece.
  • the adhesive used was one that had been applied to the test piece and then heat-treated at 250° C. for 60 minutes under nitrogen.
  • the test piece has a size of 15 mm x 15 mm, and has Al electrodes of 3 mm x 2.5 mm on a silicon wafer without any gaps.
  • a cleaning composition with excellent adhesive removability can be provided. And by using the cleaning composition of the present disclosure, productivity of semiconductor substrates can be improved.
  • Fixing member 2 Adhesive 2a Adhesive residue 3 Wafer 3a Wafer polishing/processing surface

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2023/022112 2022-06-17 2023-06-14 半導体基板の製造方法 Ceased WO2023243666A1 (ja)

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KR1020247038145A KR20250024907A (ko) 2022-06-17 2023-06-14 반도체 기판의 제조 방법
CN202380044076.1A CN119301742A (zh) 2022-06-17 2023-06-14 半导体基板的制造方法

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TW202600804A (zh) * 2024-02-29 2026-01-01 日商花王股份有限公司 晶圓加工用清潔劑組合物
JP7751760B2 (ja) * 2024-02-29 2025-10-08 花王株式会社 ウエハ加工用洗浄剤組成物
WO2026018807A1 (ja) * 2024-07-16 2026-01-22 花王株式会社 半導体基板の製造方法

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JP2009114268A (ja) * 2007-11-02 2009-05-28 Nagase Chemtex Corp ポリイミド用剥離剤
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JP2009114268A (ja) * 2007-11-02 2009-05-28 Nagase Chemtex Corp ポリイミド用剥離剤
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