WO2023226121A1 - 背板、背光模组及显示面板 - Google Patents

背板、背光模组及显示面板 Download PDF

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Publication number
WO2023226121A1
WO2023226121A1 PCT/CN2022/100214 CN2022100214W WO2023226121A1 WO 2023226121 A1 WO2023226121 A1 WO 2023226121A1 CN 2022100214 W CN2022100214 W CN 2022100214W WO 2023226121 A1 WO2023226121 A1 WO 2023226121A1
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WIPO (PCT)
Prior art keywords
planarization layer
flexible substrate
thickness
layer
backplane
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PCT/CN2022/100214
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English (en)
French (fr)
Inventor
李娟�
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2023226121A1 publication Critical patent/WO2023226121A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the field of display technology, and in particular, to a backplane, a backlight module and a display panel.
  • the driving circuit layer is generally directly prepared on a glass substrate. After the subsequent light emitting diode (LED) transfer is completed, the glass substrate is peeled off to achieve the purpose of flexible display.
  • LED light emitting diode
  • depositing a metal conductive layer directly on a glass substrate can easily make it difficult to peel off the glass substrate. Therefore, it is necessary to deposit a flexible substrate on the glass substrate first, and then deposit a metal conductive layer on the flexible substrate to facilitate the removal of the glass substrate from the flexible substrate. Peel off.
  • the material of the flexible substrate is generally an organic polymer
  • the metal conductive layer When the metal conductive layer is subsequently deposited on the flexible substrate, the metal conductive layer will climb up where there are protrusions. The metal conductive layer is easily pierced by the protrusions, causing disconnection, causing bright and dark lines, affecting the lighting effect and reducing the lighting problem. Yield.
  • Embodiments of the present application provide a backplane in order to improve the yield rate of the backplane and reduce costs.
  • Embodiments of the present application provide a backplane, including a flexible substrate, a planarization layer and a drive circuit layer; the planarization layer is located on the flexible substrate; the drive circuit layer is located on the planarization layer; wherein , the surface roughness of the side of the planarization layer close to the driving circuit layer is smaller than the surface roughness of the side of the flexible substrate close to the planarization layer.
  • Embodiments of the present application provide a backlight module, including a backplane and an optical film group.
  • the optical film group is located on the light exit side of the backplane.
  • the backplane includes a flexible substrate, a planarization layer, and a drive circuit. layer; the planarization layer is located on the flexible substrate; the drive circuit layer is located on the planarization layer; wherein the surface roughness of the side of the planarization layer close to the drive circuit layer is less than The surface roughness of the side of the flexible substrate close to the planarization layer.
  • An embodiment of the present application provides a display panel, including a backplane and a protective layer.
  • the protective layer is located on the light exit side of the backplane.
  • the backplane includes a flexible substrate, a planarization layer and a drive circuit layer; the flattened layer
  • the planarization layer is located on the flexible substrate; the drive circuit layer is located on the planarization layer; wherein the surface roughness of the planarization layer close to the drive circuit layer is smaller than the surface roughness of the side of the planarization layer close to the flexible substrate. The surface roughness of one side of the planarization layer.
  • An embodiment of the present application provides a backplane, including a flexible substrate, a planarization layer and a drive circuit layer; the planarization layer is located on the flexible substrate; the drive circuit layer is located on the planarization layer; wherein the planarization layer is close to the drive circuit
  • the surface roughness on one side of the layer is smaller than the surface roughness on the side of the flexible substrate close to the planarization layer; in this application, a planarization layer is provided between the flexible substrate and the drive circuit layer, so that the planarization layer is close to the drive circuit layer
  • the surface roughness of one side of the flexible substrate is smaller than the surface roughness of the side of the flexible substrate close to the planarization layer to flatten the gap between the flexible substrate and the protrusions on the flexible substrate and reduce the impact of the protrusions on the drive circuit.
  • the influence of the layer allows the driver circuit layer to be deposited flatly, reducing the risk of the metal conductive layer being punctured and broken, improving the reliability of the backplane and improving the display taste; and there is no need to repeatedly clean the machine, the process is simple, and the additional flattening layer It can also reduce the risk of damage to the metal conductive layer when the underlying glass substrate is peeled off.
  • Figure 1 is a top view of a backplane provided by an embodiment of the present application.
  • Figure 2 is a cross-sectional view of the back plate in Figure 1 along the A-A' direction.
  • FIG. 3 is an enlarged view of the driving circuit layer provided by the embodiment of the present application.
  • FIG. 4 is a schematic diagram of the basic structure of another backplane provided by an embodiment of the present application.
  • Figure 5 is a flow chart of a method for preparing a backplane provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of the basic structure of the semi-finished product in the backplane preparation process provided by the embodiment of the present application.
  • the backplane 100 includes a flexible substrate 10, a flat The planarization layer 20 and the drive circuit layer 30; the planarization layer 20 is located on the flexible substrate 10; the drive circuit layer 30 is located on the planarization layer 20; wherein the planarization layer 20 is close to the The surface roughness of one side of the driving circuit layer 30 is smaller than the surface roughness of the side of the flexible substrate 10 close to the planarization layer 20 .
  • the flexible substrate is generally prepared on the glass substrate, and the driving circuit layer is prepared on the flexible substrate, so that the glass substrate can be peeled off from the flexible substrate.
  • the material of the flexible substrate is generally It is an organic polymer.
  • the method of cleaning the machine is used to reduce dust and particles, it will not be possible to The protrusions must be completely cleaned.
  • the risk of damage to the metal conductive layer is higher when the underlying glass substrate is peeled off.
  • a layer of planarization layer 20 is added between the flexible substrate 10 and the driving circuit layer 30.
  • the added planarization layer 20 can cover the protrusions 40 on the flexible substrate 10, providing a flat surface for the deposition of the metal conductive layer.
  • the substrate can reduce the possibility of the metal conductive layer being punctured, especially in the later process stations that require pressure on the plane; the added planarization layer 20 can also reduce the possibility of the metal conductive layer being punctured at the location of the bump 40
  • the probability of climbing reduces the risk of disconnection due to climbing, reduces dark lines caused by disconnection, and improves display quality; the added flattening layer 20 can cover the protrusions 40, and the machine does not need to be cleaned after the flattening process.
  • the backplane preparation process has many process stations, and the film layer is easily damaged.
  • Adding the planarization layer 20 can increase the total film thickness of the backplane 100. Reduce film damage caused by bad operations such as bending stress, sharp scratches, etc.
  • the thickness d2 of the planarization layer 20 is greater than or equal to half of the thickness d3 of the flexible substrate 10 , and Less than or equal to twice the thickness d3 of the flexible substrate 10 .
  • the material of the planarization layer 20 is an insulating material, which can be an inorganic insulating material or an organic insulating material.
  • the planarizing effect of the organic insulating material is better than that of the inorganic insulating material. Therefore, if the planarization layer 20 is made of an organic insulating material, the thickness of the organic insulating material can be set to be thinner than the flexible substrate 10; if the planarization layer 20 is made of an inorganic insulating material, the inorganic insulating material can be made thinner than the flexible substrate 10. The thickness of the insulating material is set thicker than that of the flexible substrate 10 .
  • the material of the planarization layer 20 is an inorganic insulating material, and the thickness d2 of the planarization layer 20 in the direction from the flexible substrate 10 to the planarization layer 20 is greater than or equal to The thickness d3 of the flexible substrate 10 is less than or equal to twice the thickness d3 of the flexible substrate 10 .
  • the metal conductive layer in the driving circuit layer 30 is generally patterned using an acidic etching liquid.
  • the acidic etching liquid will also have a certain impact on the planarization layer 20.
  • the planarization layer 20 is made of inorganic insulating material.
  • the preparation can reduce the impact of the acid etching liquid on the planarization layer 20; at the same time, the thickness of the inorganic insulating material is set to be greater than or equal to the thickness d3 of the flexible substrate 10 and less than or equal to the thickness of the flexible substrate 10 Twice d3 can improve the effectiveness and stability of inorganic insulation materials, and the flattening effect is better.
  • the material of the planarization layer 20 is any one of silicon nitride, silicon oxide, and silicon oxynitride.
  • the material of the planarization layer 20 is an organic insulating material, and the thickness d2 of the planarization layer 20 in the direction from the flexible substrate 10 to the planarization layer 20 is greater than or equal to Half of the thickness d3 of the flexible substrate 10 and less than the thickness d3 of the flexible substrate 10 .
  • the planarization layer 20 is prepared by using an organic insulating material.
  • the organic insulating material has a better planarization effect. Therefore, the thickness of the organic insulating material can be set to be greater than or equal to the flexible substrate 10 half of the thickness d3 and less than the thickness d3 of the flexible substrate 10, not only can the protrusions 40 on the flexible substrate 10 be flattened, but also the organic insulating material has good flexibility, is easy to bend, and will not cause the backplane to The overall thickness of 100 adds too much.
  • the thickness d2 of the planarization layer 20 is greater than or equal to 10 micrometers and less than or equal to 20 micrometers.
  • the flat The safe distance d1 from the side surface of the planarization layer 20 close to the driving circuit layer 30 to the side surface of the protrusion 40 away from the flexible substrate 10 is less than the thickness d2 of the planarization layer 20 .
  • the protrusions 40 are residues of insufficient or incomplete reaction in the process of preparing the flexible substrate 10, or dust and particles falling from the air or machine equipment. They can be removed by using a cleaning machine. This method cannot completely remove it, and it also wastes machine time, manpower and materials.
  • a planarization layer 20 is provided on the flexible substrate 10, and a safety distance d1 is provided between the upper surface of the planarization layer 20 and the highest point of the protrusion 40, so that the protrusion 40 cannot penetrate
  • the planarization layer 20 will not affect the drive circuit layer 30 located on the planarization layer 20 and will not cause the metal conductive layer in the drive circuit layer 30 to climb and break, thereby increasing the stability of the backplane 100 .
  • the backplane 100 further includes a plurality of light-emitting devices 50 located on the driving circuit layer 30 , and the plurality of light-emitting devices 50 are electrically connected to the driving circuit layer 30 .
  • the backplane 100 is a backplane of a backlight module
  • the light-emitting device 50 is a backlight source
  • all the backlight sources are blue light-emitting diodes
  • the backlight source is a plurality of red light-emitting diodes. diode, a plurality of green light-emitting diodes, and a plurality of blue light-emitting diodes.
  • the backplane 100 is a backplane of an organic light-emitting diode display panel, and the light-emitting device 50 is an organic light-emitting layer, wherein the organic light-emitting layer communicates with the driver through an anode (not shown).
  • the circuit layer 30 is electrically connected.
  • the backplane 100 is a backplane of a micro-light-emitting diode display panel
  • the light-emitting device 50 is a micro-light-emitting diode or a mini-light-emitting diode.
  • FIG. 3 is an enlarged view of the driving circuit layer provided by the embodiment of the present application.
  • FIG. 3 takes the light-emitting device 50 as a micro light-emitting diode as an example, wherein the driving circuit layer 30 It includes a plurality of thin film transistors 31 located on the planarization layer 20. In FIG. 3, only one thin film transistor 31 is shown as an example.
  • the thin film transistor 31 includes a gate layer 311, a gate insulating layer 312, and an active layer 313. , interlayer insulating layer 314, source electrode 315 and drain electrode 316; the backplane also includes a power line 317 and a passivation layer 318.
  • the gate layer 311 is located on the planarization layer 20
  • the gate insulating layer 312 covers the gate layer 311
  • the active layer 313 is located on the gate insulating layer 312
  • the interlayer insulating layer 314 covers the active layer 313.
  • the source electrode 315 and the drain electrode 316 are located on the interlayer insulating layer 314.
  • the source electrode 315 and the drain electrode 316 pass through the layers respectively.
  • the via holes on the insulating layer 314 are electrically connected to both ends of the active layer 313 .
  • the power line 317 is arranged in the same layer as the source electrode 315 and the drain electrode 316, and the light-emitting device 50 is connected to the drain electrode 316 and the power supply line respectively through the via holes on the passivation layer 318.
  • Line 317 is electrically connected.
  • FIG. 4 is a schematic diagram of the basic structure of another backplane according to an embodiment of the present application.
  • the backplane 100 includes a flexible substrate 10 , a planarization layer 20 and a driving circuit layer 30 ; the planarization layer 20 is located on the flexible substrate 10; the driving circuit layer 30 is located on the planarization layer 20; wherein the surface roughness of the side of the planarization layer 20 close to the driving circuit layer 30 is smaller than the The surface roughness of the side of the flexible substrate 10 close to the planarization layer 20 .
  • the back plate 100 includes a bending area A1 and non-bending areas A2 located on both sides of the bending area A1, wherein the planarization layer 20 located in the bending area A1
  • the elastic modulus is greater than the elastic modulus of the planarization layer 20 located in the non-bending area A2.
  • elastic modulus is a measure of an object's ability to resist elastic deformation.
  • the degree of deformation of the planarization layer 20 is adjusted to prevent the protrusions 40 located in the bending area A1 from piercing the planarization layer 20 during the bending process, thereby causing undesirable situations such as disconnection of the drive circuit layer 30 .
  • FIG. 5 is a flow chart of a method for preparing a backplane according to an embodiment of the present application.
  • the method for preparing a backplane includes:
  • the planarization layer can also reduce the probability of the metal conductive layer climbing at the position of the protrusion on the flexible substrate, reduce the risk of wire breakage due to climbing, reduce dark lines caused by wire breakage, and improve the display Taste; the planarization layer can cover the protrusions.
  • planarization treatment After the planarization treatment, there is no need to clean the machine, which can reduce the problems caused and avoid the waste of manpower and material resources caused by cleaning the machine; the backplane preparation process has many process stations, and the membrane The layer is easily damaged. Adding a planarization layer can increase the total film thickness of the backplane and reduce film damage caused by bad operations such as bending stress and sharp scratches.
  • FIG. 6 is a schematic diagram of the basic structure of the semi-finished product in the backplane preparation process provided by the embodiment of the present application.
  • the preparation process it is first necessary to form a flexible substrate 10 and a planarization layer on the glass substrate 11 20. Drive the circuit layer 30 and the light-emitting device 50. After preparing the light-emitting device 50, peel the glass substrate 11 from the flexible substrate 10 to obtain a flexible backplane.
  • An embodiment of the present application provides a backlight module, which includes the above-mentioned backplane and an optical film group, and the optical film group is located on the light emitting side of the backplane.
  • the optical film set includes at least one optical film, and the optical film includes a diffusion film. , brightening film.
  • the backplane provided in the embodiment of the present application may be a backplane of a backlight module.
  • An embodiment of the present application provides a display panel, including the above-mentioned backplane and a protective layer, where the protective layer is located on the light-emitting side of the backplane.
  • the protective layer is used to protect the light-emitting devices on the backplane. It can be understood that the backplane provided in the embodiment of the present application may be a backplane of a display panel.
  • An embodiment of the present application also provides a display terminal, which includes a terminal body and the above-mentioned display panel, and the terminal body and the display panel are combined into one body.
  • the display terminal provided by the embodiment of the present application can be: a mobile phone, a tablet computer, a notebook computer, a television, a digital camera, a navigator and other products or components with display functions.
  • the embodiment of the present application provides a backplane, which includes a flexible substrate, a planarization layer and a drive circuit layer; the planarization layer is located on the flexible substrate; the drive circuit layer is located on the planarization layer; wherein, the planarization layer
  • the surface roughness of the side of the flexible substrate close to the drive circuit layer is smaller than the surface roughness of the side of the flexible substrate close to the planarization layer; in this application, a planarization layer is provided between the flexible substrate and the drive circuit layer to achieve planarization.
  • the surface roughness of the side of the layer close to the driving circuit layer is smaller than the surface roughness of the side of the flexible substrate close to the planarization layer to flatten the gap between the flexible substrate and the protrusions on the flexible substrate and reduce the protrusions.
  • the added planarization layer can also reduce the risk of the metal conductive layer being damaged when the underlying glass substrate is peeled off, solving the problem that the flexible substrate of the existing backplane has multiple protrusions that make the metal conductive layer easily punctured. , causing climbing and disconnection; if a cleaning machine is used to reduce protrusions, it will not only waste machine time, manpower and materials, but also cannot be cleaned; and when peeling off the underlying glass substrate, the risk of damage to the metal conductive layer is high.
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Abstract

一种背板(100)、背光模组及显示面板，背板(100)包括柔性衬底(10)、平坦化层(20)以及驱动电路层(30)；平坦化层(20)靠近驱动电路层(30)的一侧的表面粗糙度小于柔性衬底(10)靠近平坦化层(20)的一侧的表面粗糙度。

Description

背板、背光模组及显示面板 技术领域
本申请涉及显示技术领域，尤其涉及一种背板、背光模组及显示面板。
 背景技术
柔性背板一般直接将驱动电路层制备于玻璃基板上，待后段发光二极管(Light Emitting Diode，LED)转移完成后再将玻璃基板剥离，实现柔性显示的目的。但是，直接在玻璃基板上沉积金属导电层容易导致玻璃基板难以剥离，因此，需要先在玻璃基板上沉积柔性衬底，然后在柔性衬底上沉积金属导电层，以方便玻璃基板从柔性衬底上剥离。
然而，由于柔性衬底的材料一般为有机聚合物，在制备柔性衬底的过程中，可能会存在一些反应不充分或反应不完全的残留物，同时空气中、机台设备上还存在大量的灰尘、颗粒，导致制备完成的柔性衬底的上表面存在多个凸起物。后续在柔性衬底上沉积金属导电层时，金属导电层会在有凸起物的位置爬坡，金属导电层容易被凸起物刺穿，造成断线，引起亮暗线，影响点灯结果，降低良率。若采用清洗机台的方法减少灰尘、颗粒，不仅浪费机时、人力以及柔性衬底的材料，而且无法将凸起物完全清洗干净，还是会存在断线风险。另外，若玻璃基板和驱动电路层之间仅设置柔性衬底，在剥离底层玻璃基板时，金属导电层的损伤风险较高。故，有必要改善这一缺陷。
 技术问题
本申请实施例提供一种背板，以期提升背板的良率，降低成本。
 技术解决方案
本申请实施例提供一种背板，包括柔性衬底、平坦化层以及驱动电路层；所述平坦化层位于所述柔性衬底上；所述驱动电路层位于所述平坦化层上；其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
本申请实施例提供一种背光模组，包括背板和光学膜片组，所述光学膜片组位于所述背板的出光侧，所述背板包括柔性衬底、平坦化层以及驱动电路层；所述平坦化层位于所述柔性衬底上；所述驱动电路层位于所述平坦化层上；其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
本申请实施例提供一种显示面板，包括背板和保护层，所述保护层位于所述背板的出光侧，所述背板包括柔性衬底、平坦化层以及驱动电路层；所述平坦化层位于所述柔性衬底上；所述驱动电路层位于所述平坦化层上；其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
 有益效果
本申请实施例提供的一种背板，包括柔性衬底、平坦化层以及驱动电路层；平坦化层位于柔性衬底上；驱动电路层位于平坦化层上；其中，平坦化层靠近驱动电路层的一侧的表面粗糙度小于柔性衬底靠近平坦化层的一侧的表面粗糙度；本申请通过在柔性衬底和驱动电路层之间设置平坦化层，使平坦化层靠近驱动电路层的一侧的表面粗糙度小于柔性衬底靠近平坦化层的一侧的表面粗糙度，以平坦化柔性衬底和柔性衬底上的凸起物的断差，减小凸起物对驱动电路层的影响，使驱动电路层可以平坦沉积，降低金属导电层被刺穿断线的风险，提高背板的可靠性，提高显示品味；而且不用反复清洗机台，制程简单，增加的平坦化层还可以减小底层玻璃基板剥离时金属导电层被损伤的风险。
 附图说明
图1是本申请实施例提供的背板的俯视图。
图2是图1中的背板沿A-A’方向的剖面图。
图3是本申请实施例提供的驱动电路层的放大图。
图4是本申请实施例提供的另一背板的基本结构示意图。
图5是本申请实施例提供的背板的制备方法流程图。
图6是本申请实施例提供的背板的制备工艺流程中半成品的基本结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。在附图中，为了清晰及便于理解和描述，附图中绘示的组件的尺寸和厚度并未按照比例。
如图1和图2所示，分别为本申请实施例提供的背板的俯视图和图1中的背板沿A-A’方向的剖面图，所述背板100包括柔性衬底10、平坦化层20以及驱动电路层30；所述平坦化层20位于所述柔性衬底10上；所述驱动电路层30位于所述平坦化层20上；其中，所述平坦化层20靠近所述驱动电路层30的一侧的表面粗糙度小于所述柔性衬底10靠近所述平坦化层20的一侧的表面粗糙度。
可以理解的是，现有技术一般将柔性衬底制备在玻璃基板上，将驱动电路层制备在柔性衬底上，以便于将玻璃基板从柔性衬底上剥离，但由于柔性衬底的材料一般为有机聚合物，在制备过程中，可能会存在一些反应不充分或反应不完全的残留物，同时空气中、机台设备上还存在大量的灰尘、颗粒，导致制备完成的柔性衬底的上表面存在多个凸起物，后续在柔性衬底上沉积金属导电层时，金属导电层会在有凸起物的位置爬坡断线；若采用清洗机台的方法减少灰尘、颗粒，无法将凸起物完全清洗干净，另外，若玻璃基板和驱动电路层之间仅设置柔性衬底，在剥离底层玻璃基板时，金属导电层的损伤风险较高。
本申请通过在柔性衬底10和驱动电路层30之间增加一层平坦化层20，增加的平坦化层20可以覆盖柔性衬底10上的凸起物40，为金属导电层的沉积提供平坦的衬底，可减少金属导电层被刺穿的可能性，特别是在后段需要在平面上施加压力的工艺站点；增加的平坦化层20还可以降低金属导电层在凸起物40所在位置爬坡的概率，减小因爬坡断线的风险，降低因断线造成的暗线，提高显示品味；增加的平坦化层20可以覆盖凸起物40，平坦化处理后不需要清洗机台就可减少因此带来的问题，规避清洗机台带来的人力物力浪费；背板制备工艺的流程站点多，膜层易损伤，增加平坦化层20，可增加背板100的总膜层厚度，减小操作过程中(如弯折应力、锐器刮伤等不良操作)带来的膜层损伤。
在一种实施例中，在所述柔性衬底10至所述平坦化层20的方向上，所述平坦化层20的厚度d2大于或等于所述柔性衬底10的厚度d3的一半，且小于或等于所述柔性衬底10的厚度d3的两倍。
需要说明的是，所述平坦化层20的材料为绝缘材料，既可以为无机绝缘材料，又可以为有机绝缘材料，其中，有机绝缘材料的平坦化效果比无机绝缘材料的平坦化效果好，因此，若所述平坦化层20采用有机绝缘材料制备，则可将有机绝缘材料的厚度相对柔性衬底10设置为较薄；若所述平坦化层20采用无机绝缘材料制备，则可将无机绝缘材料的厚度相对柔性衬底10设置为较厚。
在一种实施例中，所述平坦化层20的材料为无机绝缘材料，在所述柔性衬底10至所述平坦化层20的方向上，所述平坦化层20的厚度d2大于或等于所述柔性衬底10的厚度d3，且小于或等于所述柔性衬底10的厚度d3的两倍。
需要说明的是，驱动电路层30中的金属导电层一般采用酸性蚀刻液进行图案化，酸性蚀刻液也会对平坦化层20产生一定影响，本实施例通过将平坦化层20采用无机绝缘材料进行制备，可减轻酸性蚀刻液对平坦化层20的影响；同时，将无机绝缘材料的厚度设置为大于或等于所述柔性衬底10的厚度d3且小于或等于所述柔性衬底10的厚度d3的两倍，可以提高无机绝缘材料的有效性和稳定性，平坦化效果更优。
在一种实施例中，所述平坦化层20的材料为氮化硅、氧化硅、氮氧化硅中的任一种。
在一种实施例中，所述平坦化层20的材料为有机绝缘材料，在所述柔性衬底10至所述平坦化层20的方向上，所述平坦化层20的厚度d2大于或等于所述柔性衬底10的厚度d3的一半，且小于所述柔性衬底10的厚度d3。
可以理解的是，本实施例通过将平坦化层20采用有机绝缘材料进行制备，有机绝缘材料的平坦化效果较好，因此可以将有机绝缘材料的厚度设置为大于或等于所述柔性衬底10的厚度d3的一半且小于所述柔性衬底10的厚度d3，不仅可以平坦化柔性衬底10上的凸起物40，而且有机绝缘材料的柔性较好，便于弯折，不会使背板100的整体厚度增加过多。
在一种实施例中，在所述柔性衬底10至所述平坦化层20的方向上，所述平坦化层20的厚度d2大于或等于10微米且小于或等于20微米。具体的，当所述柔性衬底10靠近所述平坦化层20的一侧具有多个凸起物40时，在所述柔性衬底10至所述平坦化层20的方向上，所述平坦化层20靠近所述驱动电路层30的一侧表面至所述凸起物40远离所述柔性衬底10的一侧表面的安全距离d1小于所述平坦化层20的厚度d2。
可以理解的是，所述凸起物40为制备柔性衬底10的过程中反应不充分或反应不完全的残留物，或从空气中、机台设备上掉落的灰尘、颗粒，采用清洗机台的方法并不能完全去除，而且还会浪费机时、人力和材料。本申请通过在柔性衬底10上设置平坦化层20，而且平坦化层20的上表面与凸起物40的最高点之间还设置有一段安全距离d1，因此，凸起物40无法刺穿平坦化层20，不会对位于平坦化层20上的驱动电路层30造成影响，不会使驱动电路层30中的金属导电层爬坡断线，增大了背板100的稳定性。
在一种实施例中，所述背板100还包括位于所述驱动电路层30上的多个发光器件50，多个所述发光器件50与所述驱动电路层30电性连接。
在一种实施例中，所述背板100为背光模组的背板，所述发光器件50为背光源，所述背光源全部为蓝色发光二极管，或者所述背光源为多个红色发光二极管、多个绿色发光二极管以及多个蓝色发光二极管。
在一种实施例中，所述背板100为有机发光二极管显示面板的背板，所述发光器件50为有机发光层，其中，所述有机发光层通过阳极(图未示)与所述驱动电路层30电性连接。
在一种实施例中，所述背板100为微发光二极管显示面板的背板，所述发光器件50为微型发光二极管或迷你发光二极管。
在一种实施例中，请参阅图3，为本申请实施例提供的驱动电路层的放大图，图3以发光器件50为微型发光二极管为例进行绘示，其中，所述驱动电路层30包括位于平坦化层20上的多个薄膜晶体管31，图3中仅以一个薄膜晶体管31为例进行绘示，所述薄膜晶体管31包括栅极层311、栅极绝缘层312、有源层313、层间绝缘层314、源极315以及漏极316；背板还包括电源线317和钝化层318。
其中，所述栅极层311位于所述平坦化层20上，所述栅极绝缘层312覆盖所述栅极层311，所述有源层313位于所述栅极绝缘层312上，所述层间绝缘层314覆盖所述有源层313，所述源极315和所述漏极316位于所述层间绝缘层314上，所述源极315和所述漏极316分别通过所述层间绝缘层314上的过孔与所述有源层313的两端电性连接。
其中，所述电源线317与所述源极315和所述漏极316同层设置，所述发光器件50通过所述钝化层318上的过孔分别与所述漏极316和所述电源线317电性连接。
接下来，请参阅图4，为本申请实施例提供的另一背板的基本结构示意图，所述背板100包括柔性衬底10、平坦化层20以及驱动电路层30；所述平坦化层20位于所述柔性衬底10上；所述驱动电路层30位于所述平坦化层20上；其中，所述平坦化层20靠近所述驱动电路层30的一侧的表面粗糙度小于所述柔性衬底10靠近所述平坦化层20的一侧的表面粗糙度。
在本实施例中，所述背板100包括弯折区A1和位于所述弯折区A1两侧的非弯折区A2，其中，位于所述弯折区A1的所述平坦化层20的弹性模量大于位于所述非弯折区A2的所述平坦化层20的弹性模量。
需要说明的是，弹性模量越大，材料越不容易变形，且刚性越强、硬度越大。从宏观角度来说，弹性模量是衡量物体抵抗弹性变形能力大小的尺度。
可以理解的是，本实施例通过将位于弯折区A1的平坦化层20的弹性模量设置为大于位于非弯折区A2的平坦化层20的弹性模量，即弯折区A1的平坦化层20的抗形变能力大于非弯折区A2的平坦化层20的抗形变能力，本实施例通过增强弯折区A1的平坦化层20的抗形变能力，从而减弱弯折区A1的平坦化层20的形变程度，避免在弯折过程中，位于弯折区A1内的凸起物40刺穿平坦化层20，从而导致驱动电路层30断线等不良情况发生。
接下来，请参阅图5，为本申请实施例提供的背板的制备方法流程图，所述背板的制备方法包括：
S1、在玻璃基板上制备柔性衬底；
S2、在所述柔性衬底上制备平坦化层；
S3、在所述平坦化层上制备驱动电路层，其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度；
S4、将所述玻璃基板从所述柔性衬底上剥离。
需要说明的是，本申请通过将柔性衬底平坦化后再进行驱动电路层的沉积，可以减少驱动电路层中的金属导电层被刺穿的可能性，特别是在后段需要在平面上施加压力的工艺站点；平坦化层还可以降低金属导电层在柔性衬底上的凸起物所在位置爬坡的概率，减小因爬坡断线的风险，降低因断线造成的暗线，提高显示品味；平坦化层可以覆盖凸起物，平坦化处理后不需要清洗机台就可减少因此带来的问题，规避清洗机台带来的人力物力浪费；背板制备工艺的流程站点多，膜层易损伤，增加平坦化层可增加背板的总膜层厚度，减小操作过程中(如弯折应力、锐器刮伤等不良操作)带来的膜层损伤。
接下来，请参阅图6，为本申请实施例提供的背板的制备工艺流程中半成品的基本结构示意图，在制备工艺流程中，首先需要在玻璃基板11上形成柔性衬底10、平坦化层20、驱动电路层30以及发光器件50，制备完发光器件50之后再将玻璃基板11从柔性衬底10上剥离，得到柔性背板。
本申请实施例提供一种背光模组，包括上述的背板和光学膜片组，所述光学膜片组位于所述背板的出光侧。其中，所述背板的基本结构及制备方法请参阅图1至图6及相关说明，此处不再赘述，所述光学膜片组包括至少一光学膜片，所述光学膜片包括扩散膜、增亮膜。可以理解的是，本申请实施例提供的背板可以为背光模组的背板。
本申请实施例提供一种显示面板，包括上述的背板和保护层，所述保护层位于所述背板的出光侧。其中，所述背板的基本结构及制备方法请参阅图1至图6及相关说明，此处不再赘述，所述保护层用于保护所述背板上的发光器件。可以理解的是，本申请实施例提供的背板可以为显示面板的背板。
本申请实施例还提供一种显示终端，包括终端主体和上述的显示面板，所述终端主体与所述显示面板组合为一体。本申请实施例提供的显示终端可以为：手机、平板电脑、笔记本电脑、电视机、数码相机、导航仪等具有显示功能的产品或部件。
综上所述，本申请实施例提供的一种背板，包括柔性衬底、平坦化层以及驱动电路层；平坦化层位于柔性衬底上；驱动电路层位于平坦化层上；其中，平坦化层靠近驱动电路层的一侧的表面粗糙度小于柔性衬底靠近平坦化层的一侧的表面粗糙度；本申请通过在柔性衬底和驱动电路层之间设置平坦化层，使平坦化层靠近驱动电路层的一侧的表面粗糙度小于柔性衬底靠近平坦化层的一侧的表面粗糙度，以平坦化柔性衬底和柔性衬底上的凸起物的断差，减小凸起物对驱动电路层的影响，使驱动电路层可以平坦沉积，降低金属导电层被刺穿断线的风险，提高背板的可靠性，提高显示品味；而且不用反复清洗机台，制程简单，增加的平坦化层还可以减小底层玻璃基板剥离时金属导电层被损伤的风险，解决了现有技术的背板的柔性衬底上具有多个凸起物，使得金属导电层容易被刺穿，造成爬坡断线；若采用清洗机台来减少凸起物，不仅浪费机时、人力和材料，而且无法清洗干净；以及剥离底层玻璃基板时，金属导电层的损伤风险较高的技术问题。
以上对本申请实施例所提供的一种背板、背光模组及显示面板进行了详细介绍。应理解，本文所述的示例性实施方式应仅被认为是描述性的，用于帮助理解本申请的方法及其核心思想，而并不用于限制本申请。

Claims (20)

  1. 一种背板，其包括：
    柔性衬底；
    平坦化层，位于所述柔性衬底上；
    驱动电路层，位于所述平坦化层上；
    其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
  2. 如权利要求1所述的背板，其中，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于或等于所述柔性衬底的厚度的两倍。
  3. 如权利要求2所述的背板，其中，所述平坦化层的材料为无机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度，且小于或等于所述柔性衬底的厚度的两倍。
  4. 如权利要求3所述的背板，其中，所述平坦化层的材料为氮化硅、氧化硅、氮氧化硅中的任一种。
  5. 如权利要求2所述的背板，其中，所述平坦化层的材料为有机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于所述柔性衬底的厚度。
  6. 如权利要求2所述的背板，其中，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于10微米且小于或等于20微米。
  7. 如权利要求1所述的背板，其中，所述背板还包括位于所述驱动电路层上的多个发光器件，多个所述发光器件与所述驱动电路层电性连接。
  8. 如权利要求1所述的背板，其中，所述背板包括弯折区和位于所述弯折区两侧的非弯折区，其中，位于所述弯折区的所述平坦化层的弹性模量大于位于所述非弯折区的所述平坦化层的弹性模量。
  9. 一种背光模组，其包括背板和光学膜片组，所述光学膜片组位于所述背板的出光侧，所述背板包括：
    柔性衬底；
    平坦化层，位于所述柔性衬底上；
    驱动电路层，位于所述平坦化层上；
    其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
  10. 如权利要求9所述的背光模组，其中，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于或等于所述柔性衬底的厚度的两倍。
  11. 如权利要求10所述的背光模组，其中，所述平坦化层的材料为有机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于所述柔性衬底的厚度。
  12. 如权利要求10所述的背光模组，其中，所述平坦化层的材料为无机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度，且小于或等于所述柔性衬底的厚度的两倍。
  13. 如权利要求9所述的背光模组，其中，所述背板还包括位于所述驱动电路层上的多个发光器件，多个所述发光器件与所述驱动电路层电性连接。
  14. 如权利要求9所述的背光模组，其中，所述背板包括弯折区和位于所述弯折区两侧的非弯折区，其中，位于所述弯折区的所述平坦化层的弹性模量大于位于所述非弯折区的所述平坦化层的弹性模量。
  15. 一种显示面板，其包括背板和保护层，所述保护层位于所述背板的出光侧，所述背板包括：
    柔性衬底；
    平坦化层，位于所述柔性衬底上；
    驱动电路层，位于所述平坦化层上；
    其中，所述平坦化层靠近所述驱动电路层的一侧的表面粗糙度小于所述柔性衬底靠近所述平坦化层的一侧的表面粗糙度。
  16. 如权利要求15所述的显示面板，其中，所述背板包括弯折区和位于所述弯折区两侧的非弯折区，其中，位于所述弯折区的所述平坦化层的弹性模量大于位于所述非弯折区的所述平坦化层的弹性模量。
  17. 如权利要求15所述的显示面板，其中，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于或等于所述柔性衬底的厚度的两倍。
  18. 如权利要求16所述的显示面板，其中，所述平坦化层的材料为无机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度，且小于或等于所述柔性衬底的厚度的两倍。
  19. 如权利要求16所述的显示面板，其中，所述平坦化层的材料为有机绝缘材料，在所述柔性衬底至所述平坦化层的方向上，所述平坦化层的厚度大于或等于所述柔性衬底的厚度的一半，且小于所述柔性衬底的厚度。
  20. 如权利要求15所述的显示面板，其中，所述背板还包括位于所述驱动电路层上的多个发光器件，多个所述发光器件与所述驱动电路层电性连接。
PCT/CN2022/100214 2022-05-24 2022-06-21 背板、背光模组及显示面板 WO2023226121A1 (zh)

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