WO2017008366A1 - 一种显示面板的制作方法 - Google Patents
一种显示面板的制作方法 Download PDFInfo
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- WO2017008366A1 WO2017008366A1 PCT/CN2015/086983 CN2015086983W WO2017008366A1 WO 2017008366 A1 WO2017008366 A1 WO 2017008366A1 CN 2015086983 W CN2015086983 W CN 2015086983W WO 2017008366 A1 WO2017008366 A1 WO 2017008366A1
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- Prior art keywords
- metal
- display panel
- lines
- manufacturing
- preset
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 148
- 239000002184 metal Substances 0.000 claims abstract description 148
- 230000002093 peripheral effect Effects 0.000 claims abstract description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Definitions
- the liquid crystal panel of the liquid crystal display generally comprises a color film substrate and an array substrate.
- the gate lines and the data lines in the array substrate generally include aluminum and aluminum alloy or copper as the metal wires.
- pure aluminum as the wire in the subsequent high-temperature fabrication, due to the stress, the surface of the aluminum easily forms a bump and the insulating layer is destroyed, resulting in electrical abnormality of the grinding transistor.
- the substrate includes a first display area and a first peripheral area, the first metal layer covering the first display area and the first peripheral area;
- the manufacturing method of the display panel of the present invention comprises providing a substrate having a first metal layer thereon, the substrate comprising a first display area and a first peripheral area, the first metal layer covering the first display a region and the first peripheral region; laying a photoresist layer on the first metal layer to form a first semi-finished plate; exposing and developing the first semi-finished plate to form a second semi-finished plate, wherein Forming, by the second half of the board, the first display area and the area of the first peripheral area respectively form a first preset a pattern and a second predetermined pattern; etching and peeling the second half of the board, so that a first preset metal line group is formed on the first display area, and a second pre-form is formed on the first peripheral area Set the metal wire group.
- Step 103 Exposing and developing the first half of the board to form a second half-formed board, wherein the second half-formed board forms a first area corresponding to the first display area and the first peripheral area respectively. a preset pattern and a second preset pattern.
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- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种显示面板的制作方法,包括提供一基板(200),基板(200)上具有第一金属层,基板(200)包括第一显示区域(210)及第一外围区域(220),第一金属层覆盖第一显示区域(210)及第一外围区域(220);在第一金属层上铺设光阻层,形成第一半成板;对第一半成板进行曝光、显影,形成第二半成板,其中,第二半成板对应第一显示区域(210)及第一外围区域(220)的区域分别形成第一及第二预设图案;对第二半成板进行蚀刻、剥离,使得第一显示区域(210)上形成第一预设金属线组,第一外围区域(220)上形成第二预设金属线组(310)。该方法大大降低了显示面板制作过程中静电放电的出现,进而大大提高了显示面板的良率。
Description
本发明要求2015年7月15日递交的发明名称为“一种显示面板的制作方法”的申请号201510414055.1的在先申请优先权,上述在先申请的内容以引入的方式并入本文本中。
本发明涉及电子领域,尤其涉及一种显示面板的制作方法。
目前常用的电子设备及仪器主要以金属线作为导线来传播信号,使用金属导线有助于降低设备的生产成本增加电子设备稳定性,所以形成金属线的材料要求价格低廉,具有较低的电阻和耐腐蚀性。液晶显示器的液晶面板一般由彩膜基板和阵列基板构成,阵列基板中的栅极线和数据线一般都是用包括铝及铝合金或者铜作为金属导线。然而使用纯铝作为导线,在后续高温制成中由于应力作用,铝的表面容易形成凸起进而破坏绝缘层导致播磨晶体管的电性异常。如果使用纯铜作为金属电极,由于铜与玻璃或者氮化硅或者氧化硅的附着力不好,容易形成金属膜剥落的现象。为克服这些问题经常使用多层铝结构或者多层铜结构作为栅极或者数据电极,具体的是将铝或者铜与高耐腐蚀性的钼或者钛叠层在一起。然而在显示器面板的制作过程中,多层结构的电极中不同金属的蚀刻率不同,特别是钼或者钛比较不活泼,显示区外围有大面积金属待蚀刻时经常会现出大面积现底层金属钼或者钛残留,容易引起后续制成出现静电放电(ESD),从而造成面板良率大大降低失。
发明内容
本发明所要解决的技术问题在于提供一种显示面板的制作方法,以提供显示面板的良率。
为了实现上述目的,本发明实施方式提供如下技术方案:
本发明供了一种显示面板的制作方法,包括:
提供一基板,所述基板上具有第一金属层,所述基板包括第一显示区域及第一外围区域,所述第一金属层覆盖所述第一显示区域及所述第一外围区域;
在所述第一金属层上铺设光阻层,形成第一半成板;
对所述第一半成板进行曝光、显影,形成第二半成板,其中,所述第二半成板对应所述第一显示区域及第一外围区域的区域分别形成第一预设图案及第二预设图案;
对所述第二半成板进行蚀刻、剥离,从而使得所述第一显示区域上形成第一预设金属线组,所述第一外围区域上形成第二预设金属线组。
其中,所述第二预设金属线组中的每个金属线的宽度小于1厘米。
其中,所述第二预设金属线组中的金属线为直线、曲线或折线。
其中,所述第二预设金属线组中的金属线为虚线状。
其中,所述第二预设金属线组中的相邻两金属线之间的距离均相同。
其中,所述基板上还具有第二金属层,所述第二金属层包括第二显示区域及第二外围区域;其中,所述制作方法还包括:
在所述第二金属层上铺设光阻层,形成第三半成板;
对所述第三半成板进行曝光、显影,形成第四半成板,其中,所述第四半成板对应所述第二显示区域及第二外围区域的区域分别形成第三预设图案及第四预设图案;
对所述第四半成板进行蚀刻、剥离,从而使得所述第二显示区域上形成第三预设金属线组,所述第二外围区域上形成第四预设金属线组。
其中,所述第四预设金属线组中的每个金属线的宽度小于1厘米。
其中,所述第四预设金属线组中的金属线为直线、曲线或折线。
其中,所述第四预设金属线组中的金属线为虚线。
其中,所述第四预设金属线组中的相邻两金属线之间的距离均相同。
本发明所述显示面板的制作方法包括提供一基板,所述基板上具有第一金属层,所述基板包括第一显示区域及第一外围区域,所述第一金属层覆盖所述第一显示区域及所述第一外围区域;在所述第一金属层上铺设光阻层,形成第一半成板;对所述第一半成板进行曝光、显影,形成第二半成板,其中,所述第二半成板对应所述第一显示区域及第一外围区域的区域分别形成第一预设
图案及第二预设图案;对所述第二半成板进行蚀刻、剥离,从而使得所述第一显示区域上形成第一预设金属线组,所述第一外围区域上形成第二预设金属线组。由于在所述第一外围区域上形成了所述第二预设金属线组,从而形成了若干的引流道,以在进行蚀刻时引导蚀刻液进行流动,进而加速了蚀刻的速度及范围,使得所述第一外围区域不会再由大面的金属残留,大大降低了显示面板制作过程中出现静电放电的出现,进而大大提高了显示面板的良率。
为了更清楚地说明本发明的技术方案,下面将对实施方式中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以如这些附图获得其他的附图。
图1是本发明第一实施例提供的一种显示面板的制作方法的流程图;
图2是采用图1的方法制成的显示面板在处于步骤101时的示意图;
图3是采用图1的方法制成的显示面板在处于步骤104时的示意图,其中显示区域的第一预设金属线组未示出;
图4是本发明第一实施例提供的一种显示面板的制作方法的流程图。
下面将结合本发明实施方式中的附图,对本发明实施方式中的技术方案进行清楚、完整地描述。
请参阅图1至图3,本发明第一实施例提供一种显示面板的制作方法。所述方法包括一下步骤:
步骤101、提供一基板200,所述基板200上具有第一金属层,所述基板200包括第一显示区域210及第一外围区域220。所述第一金属层覆盖所述第一显示区域210及所述第一外围区域220。
需要说明的是,所述基板200可以为薄膜晶体管阵列基板。所述第一金属层可以为所述基板上的第一层,也可以为所述基板200的其他层。所述第一金属层可以为在所述基板上通过金属溅射成膜形成所述第一金属层。所述第一金
属层为金属膜。所述第一外围区域220为所述第一显示区域210的外围区域。所述第一金属层可以是将铝或者铜于不活泼金属(如钼或者钛)叠层在一起的层。
步骤102、在所述第一金属层上铺设光阻层,形成第一半成板。
需要说明的是,本实施例中,采用旋涂方式或辊涂方法在所述第一半成板表面上涂布光阻剂。在其他实施例中,也可以采用其他的方式在所述第一半成板表面上涂布光阻剂。
步骤103、对所述第一半成板进行曝光、显影,形成第二半成板,其中,所述第二半成板对应所述第一显示区域及第一外围区域的区域分别形成第一预设图案及第二预设图案。
在本实施例中,所述光阻剂为正型光阻剂。所述正型光阻剂在所述预设波长的紫外线的照射下光阻剂的光照部分发生分解,溶解度增大,在所述第一半成板的对应所述第一显示区域的区域内形成所述第一预设图案,且在对应所述第一外围区域的区域上形成所述第二预设区域。在其他的实施例中,所述光阻剂也可以为负型光阻剂。所述负型光阻剂在所述预设波长的紫外线的照射下光阻剂的光照部分发生反应,溶解度变小,在所述第一半成板的对应第一显示区域的区域内形成与所述第一预设图案相反的图案,在对应所述第一外围区域的区域上形成与所述二预设图案相反的图案。
步骤104、对所述第二半成板进行蚀刻、剥离,从而使得所述第一显示区域上形成第一预设金属线组,所述第一外围区域上形成第二预设金属线组310(参阅图3)。
需要说明的是,可以采用混合酸作为蚀刻剂。其中,所述混合酸包括磷酸及硝酸。可以通过预设浓度的碱液进行剥离,在所述第一显示区域内形成第一预设金属线组,在所述第一外围区域上形成所述第二预设金属线组。其中,所述预设浓度的碱液为KOH、NaOH或有机碱。相邻的两个金属线之间形成引流道,用于引导蚀刻液的流动方向。所述第一预设金属线组包括栅极线及数据线。
需要说明的是,在步骤104完成之后,所述显示面板还尚未完成,后续还需要进行真空制成等,最后在进行切割得到一个一个显示面板。
在本实施例中,所述显示面板的制作方法包括提供一基板,所述基板上具有第一金属层,所述基板包括第一显示区域及第一外围区域,所述第一金属层覆盖所述第一显示区域及所述第一外围区域;在所述第一金属层上铺设光阻层,形成第一半成板;对所述第一半成板进行曝光、显影,形成第二半成板,其中,所述第二半成板对应所述第一显示区域及第一外围区域的区域分别形成第一预设图案及第二预设图案;对所述第二半成板进行蚀刻、剥离,从而使得所述第一显示区域上形成第一预设金属线组,所述第一外围区域上形成第二预设金属线组310。由于在所述第一外围区域上形成了所述第二预设金属线组310,从而形成了若干的引流道,以在进行蚀刻时引导蚀刻液进行流动,进而加速了蚀刻的速度及范围,使得所述第一外围区域不会再由大面的金属残留,大大降低了显示面板制作过程中出现静电放电的出现,进而大大提高了显示面板的良率。
可选地,在本实施例中,所述第二预设金属线组310中的每个金属线的宽度可以小于1厘米,优选为2微米。所述第二预设金属线组310中的金属线可以为直线、曲线或折线。在其他实施例中,所述第二预设金属线组310的金属线可以为其他形状的线体。
可选地,在本实施例中,所述第二预设金属线组中的金属线为虚线状。
需要说明的是,所述相同长度的虚线状的金属线相较于实线状的金属线的金属量小,且可以形成的引流通的数量更多,从而可以更加加速蚀刻的速度及范围,使得所述第一外围区域残留的金属量大大减少,从而大大降低了显示面板制作过程中出现静电放电的出现,进而更加提高了显示面板的良率。在其他实施例中,所述第二预设金属线组中的金属线也可以为实线状。
可选地,所述第二预设金属线组310中的相邻两金属线之间的距离均相同。
需要说明的是,由于相邻两金属线之间的距离均相同,使得若干引流道相同且均匀,从而可以使得蚀刻液均匀地被引导流动,蚀刻的速度及范围更均匀,使得所述第一外围区域不会再由大面的金属残留,大大降低了显示面板制作过程中出现静电放电的出现,进而大大提高了显示面板的良率。在其他实施例中,所述第二预设金属线组310中的相邻两金属线之间的距离也可以相同。
请参参阅图4,本发明第二实施例提供一种显示面板的制作方法。所述第二实施例提供的制作方法与所述第一实施例提供的制作方法相似,两者的区别在于:在所述第二实施例中,所述基板上还具有第二金属层。所述第二金属层包括第二显示区域及第二外围区域。所述第二显示区域对应所述第一显示区域。所述第二外围区域对应所述第一外围区域。所述第二金属层可以是将铝或者铜于不活泼金属(如钼或者钛)叠层在一起的层。所述制作方法还包括以下步骤。
步骤401、在所述第二金属层上铺设光阻层,形成第三半成板。
需要说明的是,本实施例中,采用旋涂方式或辊涂方法在所述第二金属层上涂布光阻剂。在其他实施例中,也可以采用其他的方式在所述第二金属层上涂布光阻剂。
步骤402、对所述第三半成板进行曝光、显影,形成第四半成板,其中,所述第四半成板对应所述第二显示区域及第二外围区域的区域分别形成第三预设图案及第四预设图案。
在本实施例中,所述光阻剂为正型光阻剂。所述正型光阻剂在所述预设波长的紫外线的照射下光阻剂的光照部分发生分解,溶解度增大,在所述第三半成板的对应所述第二显示区域的区域内形成所述第三预设图案,且在对应所述第一外围区域的区域上形成所述第四预设区域。在其他的实施例中,所述光阻剂也可以为负型光阻剂。所述负型光阻剂在所述预设波长的紫外线的照射下光阻剂的光照部分发生反应,溶解度变小,在所述第三半成板的对应第一显示区域的区域内形成与所述第三预设图案相反的图案,在对应所述第一外围区域的区域上形成与所述四预设图案相反的图案。
步骤403、对所述第四半成板进行蚀刻、剥离,从而使得所述第二显示区域上形成第三预设金属线组,所述第二外围区域上形成第四预设金属线组。
需要说明的是,可以采用混合酸作为蚀刻剂。其中,所述混合酸包括磷酸及硝酸。可以通过预设浓度的碱液进行剥离,在所述第二显示区域内形成第三预设金属线组,在所述第一外围区域上形成所述第四预设金属线组。其中,所述预设浓度的碱液为KOH、NaOH或有机碱。相邻的两个金属线之间形成引流道,用于引导蚀刻液的流动方向。所述第三预设金属线组包括栅极线及数据
线。
在本实施例中,所述显示面板的制作方法包括在所述第二金属层上铺设光阻层,形成第三半成板。对所述第三半成板进行曝光、显影,形成第四半成板,其中,所述第四半成板对应所述第二显示区域及第二外围区域的区域分别形成第三预设图案及第四预设图案。对所述第四半成板进行蚀刻、剥离,从而使得所述第二显示区域上形成第三预设金属线组,所述第二外围区域上形成第四预设金属线组。由于在所述第二外围区域上形成了所述第四预设金属线组,从而形成了若干的引流道,以在进行蚀刻时引导蚀刻液进行流动,进而加速了蚀刻的速度及范围,使得所述第一外围区域不会再由大面的金属残留,大大降低了显示面板制作过程中出现静电放电的出现,进而大大提高了显示面板的良率。
可选地,所述第四预设金属线组中的每个金属线的宽度可以小于1厘米,优选为2微米。所述第四预设金属线组中的金属线为直线、曲线或折线。在其他实施例中,所述第四预设金属线组的金属线可以为其他形状的线体。
可选地,在本实施例中,所述第四预设金属线组中的金属线为虚线。
需要说明的是,所述相同长度的虚线状的金属线相较于实线状的金属线的金属量小,且可以形成的引流通的数量更多,从而可以更加加速蚀刻的速度及范围,使得所述第二外围区域残留的金属量大大减少,从而大大降低了显示面板制作过程中出现静电放电的出现,进而更加提高了显示面板的良率。在其他实施例中,所述第四预设金属线组中的金属线也可以为实线状。
可选地,所述第四预设金属线组中的相邻两金属线之间的距离均相同。
需要说明的是,由于相邻两金属线之间的距离均相同,使得若干引流道相同且均匀,从而可以使得蚀刻液均匀地被引导流动,蚀刻的速度及范围更均匀,使得所述第二外围区域不会再由大面的金属残留,大大降低了显示面板制作过程中出现静电放电的出现,进而大大提高了显示面板的良率。在其他实施例中,所述第四预设金属线组中的相邻两金属线之间的距离也可以相同。
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (10)
- 一种显示面板的制作方法,包括:提供一基板,所述基板上具有第一金属层,所述基板包括第一显示区域及第一外围区域,所述第一金属层覆盖所述第一显示区域及所述第一外围区域;在所述第一金属层上铺设光阻层,形成第一半成板;对所述第一半成板进行曝光、显影,形成第二半成板,其中,所述第二半成板对应所述第一显示区域及第一外围区域的区域分别形成第一预设图案及第二预设图案;对所述第二半成板进行蚀刻、剥离,从而使得所述第一显示区域上形成第一预设金属线组,所述第一外围区域上形成第二预设金属线组。
- 如权利要求1所述的显示面板的制作方法,其中,所述第二预设金属线组中的每个金属线的宽度小于1厘米。
- 如权利要求1所述的显示面板的制作方法,其中所述第二预设金属线组中的金属线为直线、曲线或折线。
- 如权利要求1所述的显示面板的制作方法,其中,所述第二预设金属线组中的金属线为虚线状。
- 如权利要求1所述的显示面板的制作方法,其中,所述第二预设金属线组中的相邻两金属线之间的距离均相同。
- 如权利要求1所述的显示面板的制作方法,其中,所述基板上还具有第二金属层,所述第二金属层包括第二显示区域及第二外围区域;其中,所述制作方法还包括:在所述第二金属层上铺设光阻层,形成第三半成板;对所述第三半成板进行曝光、显影,形成第四半成板,其中,所述第四半成板对应所述第二显示区域及第二外围区域的区域分别形成第三预设图案及第四预设图案;对所述第四半成板进行蚀刻、剥离,从而使得所述第二显示区域上形成第三预设金属线组,所述第二外围区域上形成第四预设金属线组。
- 如权利要求6所述的显示面板的制作方法,其中,所述第四预设金属线 组中的每个金属线的宽度小于1厘米。
- 如权利要求6所述的显示面板的制作方法,其中,所述第四预设金属线组中的金属线为直线、曲线或折线。
- 如权利要求6所述的显示面板的制作方法,其中,所述第四预设金属线组中的金属线为虚线。
- 如权利要求6所述的显示面板的制作方法,其中,所述第四预设金属线组中的相邻两金属线之间的距离均相同。
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CN1901208A (zh) * | 2005-07-20 | 2007-01-24 | 三星电子株式会社 | 显示装置的阵列基板 |
CN1953190A (zh) * | 2005-10-20 | 2007-04-25 | 三星电子株式会社 | 阵列基板及其制造方法、包括其的液晶显示器设备 |
US20090176325A1 (en) * | 2008-01-03 | 2009-07-09 | Woo-Seok Jeon | Halftone mask, method of manufacturing the same, and method of manufacturing an array substrate using the same |
CN103091915A (zh) * | 2011-11-07 | 2013-05-08 | 三菱电机株式会社 | 布线构造、包括它的薄膜晶体管阵列基板及显示装置 |
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CN204230241U (zh) * | 2014-12-16 | 2015-03-25 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN104934445A (zh) * | 2015-06-01 | 2015-09-23 | 深圳市华星光电技术有限公司 | Tft基板组及其制作方法 |
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CN104950539A (zh) | 2015-09-30 |
US20170154904A1 (en) | 2017-06-01 |
US10153309B2 (en) | 2018-12-11 |
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