WO2023206594A1 - Silicon carbide device having crimping structure and manufacturing method for silicon carbide device - Google Patents

Silicon carbide device having crimping structure and manufacturing method for silicon carbide device Download PDF

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Publication number
WO2023206594A1
WO2023206594A1 PCT/CN2022/091330 CN2022091330W WO2023206594A1 WO 2023206594 A1 WO2023206594 A1 WO 2023206594A1 CN 2022091330 W CN2022091330 W CN 2022091330W WO 2023206594 A1 WO2023206594 A1 WO 2023206594A1
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silicon carbide
heat dissipation
chip
connecting bridge
ring
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PCT/CN2022/091330
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French (fr)
Chinese (zh)
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赵岩
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赵岩
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process

Definitions

  • the invention relates to the technical field of electronic components.
  • the output rectifier device with a press-fit structure is an important part of the generator output rectifier device and is usually installed above the generator.
  • Traditional output rectifier devices use silicon-based chips, and the theoretical maximum junction temperature can reach 230°C, which can meet most application needs.
  • some rectifier devices need to work reliably for a long time at temperatures up to 225°C. Therefore, higher environmental adaptability requirements are put forward for the devices.
  • the current press-fit structure is a flat plate structure with double-sided heat dissipation and cooling, which cannot fully utilize the high-temperature resistant working characteristics of silicon carbide devices.
  • the present invention provides a silicon carbide device with a pressure-bonded structure and a manufacturing method thereof.
  • a silicon carbide device with a press-fit structure including a tube base 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube.
  • the pipe cap 7 is installed on the upper part of the pipe base 1;
  • the pipe base 1 includes a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 connected in sequence;
  • an insulating block is installed inside the pipe base 1 6;
  • the silicon carbide chip 3 is installed inside the heat dissipation ring 11 through the transition piece 2, the silicon carbide chip 3 is installed with a connecting bridge 4, and the connecting bridge 4 is connected to the lower pressure block 8.
  • the pipe cap 7 includes an upper pressure block 13 and a flange 14.
  • the upper pressure block 13 and the flange 14 are connected by brazing.
  • the buffer piece 5 is made of silver. One side of the buffer piece 5 is fixed on the upper pressure block 13.
  • the buffer piece 5 is The other side is fixed on the insulating block 6, and the pipe cap 7 is connected to the pipe base 1 by plasma welding or cold pressing.
  • the lower pressure block 8, sealing ring 9, ceramic ring 10, heat dissipation ring 11, and seat flange 12 are connected by brazing.
  • the outside of the heat dissipation ring 11 is a skirt tooth structure, and the inside of the heat dissipation ring 11 is a polygonal structure.
  • the material of the heat dissipation ring 11 is It is oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
  • Each set of transition piece 2 and silicon carbide chip 3 are respectively located on an inner side of the heat dissipation ring 11, between the transition piece 2 and the silicon carbide chip 3, between the silicon carbide chip 3 and the connecting bridge 4, and between the connecting bridge 4 and the lower
  • the compacts 8 are connected by nano-silver low-temperature sintering.
  • the transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is silver-plated.
  • the silicon carbide chip 3 is one of a diode chip, an IGBT chip, a MOS chip, or a combination thereof.
  • the chip shape is square or circular, and the chip electrode area is a silver layer or a gold layer.
  • the connecting bridge 4 is made of silver, and there is at least one connecting bridge 4 .
  • the connecting bridge 4 is installed between each silicon carbide chip 3 , or one silicon carbide chip 3 is connected to one connecting bridge 4 .
  • a method for manufacturing a silicon carbide device with a press-fit structure including the following steps:
  • Step 1 prepare nano silver solder paste
  • Step 2 Ultrasonically clean the tube base 1, transition piece 2, silicon carbide chip 3 and connecting bridge 4 in isopropyl alcohol;
  • Step 3 Apply an appropriate amount of nano-silver solder paste to each contact surface of the heat dissipation ring 11 of the tube base 1, a set of transition pieces 4, the silicon carbide chip 3 and the connecting bridge 4 in the purification workbench, and put them into the purification workbench. Pre-bake at 60°C for 15 minutes in a heating box.
  • Step 4 Place the pressure head of the sintering tool on the surface of the stacked connecting bridge 4, with a counterweight pressure of 15MPa ⁇ 20MPa;
  • Step 5 After the assembly is completed, sintering is performed in a nitrogen-containing atmosphere at 265°C ⁇ 15°C.
  • the sintering time is 20 to 30 minutes;
  • Step 6 Fix the buffer sheet 5 on the pipe cap 7 with a crimping force of 0.7MPa ⁇ 0.1MPa;
  • Step 7 Install the insulating block 6 into the pipe base 1, and perform plasma welding and sealing of the pipe base 1 and the pipe cap 7 with a sealing current of 3A ⁇ 0.5A, or cold press sealing with a sealing pressure of 12MPa ⁇ 1MPa.
  • step 4 the direction of the counterweight pressure is vertically downward and perpendicular to the inner surface of the heat dissipation ring 11 .
  • a silicon carbide device with a press-fit structure and a manufacturing method thereof according to the present invention realize current sharing and parallel connection of multiple silicon carbide chips through the polygonal structure layout of the heat dissipation ring.
  • the heat dissipation structure is formed to achieve three-dimensional cooling, which improves the device's flow capacity; the silicon carbide chips are interconnected through the nano-silver low-temperature sintering process.
  • silicon carbide devices can operate at higher frequencies and higher temperatures. under, it can meet the working environment requirements of 200°C ⁇ 300°C.
  • Figure 1 is a structural diagram of a traditional silicon-based output rectifier device.
  • Figure 2 is a front structural view of a silicon carbide device with a pressure-bonded structure according to the present invention.
  • Figure 3 is a main cross-sectional view of the silicon carbide device of the present invention.
  • Figure 4 is a top cross-sectional view of the silicon carbide device of the present invention.
  • FIG. 2-4 The structure of a silicon carbide device with a press-fit structure of the present invention is shown in Figures 2-4, including a tube base 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube cap 7 , the pipe cap 7 is installed on the upper part of the pipe base 1;
  • the pipe base 1 includes a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 connected in sequence;
  • an insulating block 6 is installed inside the pipe base 1;
  • the silicon carbide chip 3 is installed inside the heat dissipation ring 11 through the transition piece 2.
  • the silicon carbide chip 3 is installed with a connecting bridge 4, and the connecting bridge 4 is connected to the lower pressing block 8.
  • the tube base 1 is brazed by a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12.
  • the heat dissipation ring 11 has a skirt tooth structure on the outside and a polygonal structure on the inside.
  • the heat dissipation ring 11 is made of It is oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
  • transition pieces 2 silicon carbide chips 3, and connecting bridges 4.
  • Each transition piece 2, silicon carbide chip 3, and connecting bridge 4 are arranged in one-to-one correspondence on the inner surface of the heat dissipation ring 11 with the same structure. 4 is connected to the lower pressing block 8 of the tube base 1, using a nano-silver low-temperature sintering process.
  • the transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is silver-plated.
  • the silicon carbide chip 3 is square, the chip electrode area is a silver layer, and the connecting bridge 4 is made of silver.
  • the pipe cap 7 is brazed by the upper pressure block 13 and the flange 14.
  • the material of the buffer sheet 5 is silver, one side is fixed on the upper pressing block 13 of the tube cap 7, and the other side is fixed on the insulating block 6.
  • the pipe cap 7 and the pipe seat 1 are sealed by plasma welding or cold pressure sealing.
  • Embodiment 1 A method for manufacturing a silicon carbide device with a press-fit structure, Embodiment 1 includes the following steps:
  • Step 1 Stir the nano-silver solder paste thoroughly
  • Step 2 Ultrasonically clean the tube holder, transition piece, silicon carbide diode chip, and connecting bridge in isopropyl alcohol for 15 minutes;
  • Step 3 Apply 0.1mm thick nano-silver solder paste to an inner contact surface of the heat dissipation ring of the tube holder in the purification workbench, and apply 0.08 mm thick nano-silver paste to each contact surface of a set of transition pieces and silicon carbide diode chips.
  • solder paste apply 0.12mm thick nano-silver solder paste on the contact surface between the bridge and the lower pressure block, and place it in a purification heating box at 60°C for pre-baking for 15 minutes.
  • Step 4 Place the pressure head of the sintering tooling on the surface of the stacked connecting bridge 4, with a counterweight pressure of 18MPa, and the pressure direction is vertically downward and perpendicular to the inner surface of the heat dissipation ring;
  • Step 5 After the assembly is completed, sintering in a nitrogen-containing atmosphere at 265°C for 25 minutes; repeat steps 3, 4, and 5 to complete the remaining sets of transition sheets, silicon carbide diode chips, connecting bridges, and tube base heat dissipation Sintering between the inner side of the ring and the lower pressing block.
  • Step 6 Fix the buffer sheet on the pipe cap with a crimping force of 0.7MPa;
  • Step 7 Install the insulating block into the pipe base, and perform plasma welding to seal the pipe base and pipe cap.
  • the sealing welding current is 3A ⁇ 0.5A.
  • Embodiment 2 includes the following steps:
  • Step 1 Stir the nano-silver solder paste thoroughly
  • Step 2 Ultrasonically clean the tube holder, transition piece, silicon carbide IGBT chip, and connecting bridge in isopropyl alcohol for 15 minutes;
  • Step 3 Apply 0.1mm thick nano-silver solder paste to an inner contact surface of the heat dissipation ring of the tube holder in the purification workbench, and apply 0.06 mm thick nano-silver paste to each contact surface of a set of transition pieces and silicon carbide IGBT chips. Put the solder paste into a purification heating box and pre-bake it at 60°C for 15 minutes.
  • Step 4 Place the pressure head of the sintering tooling on the surface of the stacked connecting bridge 4, with a counterweight pressure of 15MPa, and the pressure direction is vertically downward and perpendicular to the inner surface of the heat dissipation ring;
  • Step 5 After the assembly is completed, sinter in nitrogen-containing nitrogen at 255°C for 20 minutes. Repeat steps 3, 4, and 5 to complete the sintering between the remaining groups of transition pieces, silicon carbide IGBT chips, connecting bridges, and the inner side of the tube base heat dissipation ring; use high-temperature soldering pads to weld between the connecting bridges and the lower pressure block.
  • Step 6 Fix the buffer sheet on the pipe cap with a crimping force of 0.7MPa;
  • Step 7 Install the insulation block into the pipe base, and cold-press seal the pipe base and pipe cap with a sealing pressure of 12MPa.
  • step 3 of this embodiment the emitter surface and gate surface of the silicon carbide IGBT chip are coated with different types of nano-silver solder paste, and the gate of the silicon carbide IGBT chip is not weighted.
  • step 5 of this embodiment the connecting bridge and the lower pressing block are welded in a 350°C vacuum welding furnace.

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Abstract

A silicon carbide device having a crimping structure and a manufacturing method for the silicon carbide device. The silicon carbide device having the crimping structure comprises a tube base, transition sheets, silicon carbide chips, connecting bridges, an insulating block, a buffer sheet, and a tube cap; the tube cap is mounted on the upper portion of the tube base; the tube base comprises a lower pressing block, a sealing ring, a ceramic ring, a heat dissipation ring, and a base flange which are sequentially connected; the insulating block is mounted inside the tube base; the buffer sheet is fixed between the tube cap and the insulating block; the silicon carbide chips are mounted on the inner side of the heat dissipation ring by means of the transition sheets, the connecting bridges are mounted on the silicon carbide chips, and the connecting bridges are connected to the lower pressing block. Current-sharing parallel connection of a plurality of silicon carbide chips is achieved by means of the polygonal structure layout of the heat dissipation ring, three-dimensional cooling is achieved by means of a heat dissipation structure consisting of the heat dissipation ring, the connecting bridges, the upper pressing block, the lower pressing block, and the buffer sheet, and the through-current capability of the device is improved; the silicon carbide chips are interconnected by means of a nano-silver low-temperature sintering process, and compared with existing silicon-based devices, the silicon carbide device can work at higher frequency and higher temperature and can satisfy the working environment requirement of 200°C-300°C.

Description

一种压接结构的碳化硅器件及其制造方法A silicon carbide device with a press-fit structure and a manufacturing method thereof 技术领域Technical field
本发明涉及电子元器件技术领域。The invention relates to the technical field of electronic components.
背景技术Background technique
压接结构的输出整流器件是发电机输出整流装置的重要组成部分，通常安装于发电机上方。传统的输出整流器件，采用硅基芯片，理论上最高结温可达到230℃，能满足大多数的应用需求。但在飞行器、舰船领域随着多电或全电系统得到更多的应用，部分整流器件需长期可靠工作在高达225℃的条件下，因此对器件提出了更高的环境适应性需求。The output rectifier device with a press-fit structure is an important part of the generator output rectifier device and is usually installed above the generator. Traditional output rectifier devices use silicon-based chips, and the theoretical maximum junction temperature can reach 230°C, which can meet most application needs. However, as multi-electric or all-electric systems are increasingly used in the fields of aircraft and ships, some rectifier devices need to work reliably for a long time at temperatures up to 225°C. Therefore, higher environmental adaptability requirements are put forward for the devices.
传统硅基输出整流器件如图1所示，和硅基器件相比，碳化硅器件结温特性更加优异,但由于制造技术和成本的限制，单个碳化硅裸片的额定电流通常在100A以内，难以满足输出整流的功率要求，需要多芯均流并联以提高通流能力。Traditional silicon-based output rectifier devices are shown in Figure 1. Compared with silicon-based devices, silicon carbide devices have better junction temperature characteristics. However, due to limitations in manufacturing technology and cost, the rated current of a single silicon carbide die is usually within 100A. It is difficult to meet the power requirements of output rectification, and multi-core current sharing is required in parallel to improve the current flow capacity.
目前的压接结构为双面散热冷却的平板结构，不能充分发挥碳化硅器件的耐高温的工作特性。The current press-fit structure is a flat plate structure with double-sided heat dissipation and cooling, which cannot fully utilize the high-temperature resistant working characteristics of silicon carbide devices.
发明内容Contents of the invention
为了解决传统碳化硅器件存在的上述问题，本发明提供了一种压接结构的碳化硅器件及其制造方法。In order to solve the above-mentioned problems existing in traditional silicon carbide devices, the present invention provides a silicon carbide device with a pressure-bonded structure and a manufacturing method thereof.
本发明为实现上述目的所采用的技术方案是：一种压接结构的碳化硅器件，包括管座1、过渡片2、碳化硅芯片3、连桥4、缓冲片5、绝缘块6和管帽7，管帽7安装于管座1上部；管座1包括依次连接的下压块8、封接环9、陶瓷环10、散热环11和座法兰12；管座1内部安装绝缘块6；散热环11内侧通过过渡片2安装碳化硅芯片3，碳化硅芯片3安装连桥4，连桥4连接下压块8。The technical solution adopted by the present invention to achieve the above object is: a silicon carbide device with a press-fit structure, including a tube base 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube. Cap 7, the pipe cap 7 is installed on the upper part of the pipe base 1; the pipe base 1 includes a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 connected in sequence; an insulating block is installed inside the pipe base 1 6; The silicon carbide chip 3 is installed inside the heat dissipation ring 11 through the transition piece 2, the silicon carbide chip 3 is installed with a connecting bridge 4, and the connecting bridge 4 is connected to the lower pressure block 8.
所述管帽7包括上压块13和法兰14，上压块13和法兰14硬钎焊连接，缓冲片5材质为银，缓冲片5一面固定在上压块13上，缓冲片5另一面固定在绝缘块6上，管帽7与管座1等离子焊密封连接或冷压密封连接。The pipe cap 7 includes an upper pressure block 13 and a flange 14. The upper pressure block 13 and the flange 14 are connected by brazing. The buffer piece 5 is made of silver. One side of the buffer piece 5 is fixed on the upper pressure block 13. The buffer piece 5 is The other side is fixed on the insulating block 6, and the pipe cap 7 is connected to the pipe base 1 by plasma welding or cold pressing.
所述下压块8、封接环9、陶瓷环10、散热环11、座法兰12硬钎焊连接，散热环11外部为裙齿结构，散热环11内部为多边形结构，散热环11材质为无氧铜、钼铜合金或钨铜合金。The lower pressure block 8, sealing ring 9, ceramic ring 10, heat dissipation ring 11, and seat flange 12 are connected by brazing. The outside of the heat dissipation ring 11 is a skirt tooth structure, and the inside of the heat dissipation ring 11 is a polygonal structure. The material of the heat dissipation ring 11 is It is oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
所述每组过渡片2、碳化硅芯片3分别位于散热环11的一个内侧面上，过渡片2与碳化硅芯片3之间、碳化硅芯片3与连桥4之间，连桥4与下压块8之间分别纳米银低温烧 结连接。Each set of transition piece 2 and silicon carbide chip 3 are respectively located on an inner side of the heat dissipation ring 11, between the transition piece 2 and the silicon carbide chip 3, between the silicon carbide chip 3 and the connecting bridge 4, and between the connecting bridge 4 and the lower The compacts 8 are connected by nano-silver low-temperature sintering.
所述过渡片2为钼片，钼片表面镀银。The transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is silver-plated.
所述碳化硅芯片3是二极管芯片、IGBT芯片、MOS芯片中的一种或其组合，芯片形状为方形或圆形，芯片电极区为银层或金层。The silicon carbide chip 3 is one of a diode chip, an IGBT chip, a MOS chip, or a combination thereof. The chip shape is square or circular, and the chip electrode area is a silver layer or a gold layer.
所述连桥4材质为银，连桥4为至少一个，各个碳化硅芯片3之间安装连桥4，或者一个碳化硅芯片3与一个连桥4连接。The connecting bridge 4 is made of silver, and there is at least one connecting bridge 4 . The connecting bridge 4 is installed between each silicon carbide chip 3 , or one silicon carbide chip 3 is connected to one connecting bridge 4 .
一种压接结构的碳化硅器件制造方法，包括如下步骤：A method for manufacturing a silicon carbide device with a press-fit structure, including the following steps:
步骤1，准备纳米银焊膏；Step 1, prepare nano silver solder paste;
步骤2，将管座1、过渡片2、碳化硅芯片3和连桥4在异丙醇中超声清洗；Step 2: Ultrasonically clean the tube base 1, transition piece 2, silicon carbide chip 3 and connecting bridge 4 in isopropyl alcohol;
步骤3，在净化工作台内将管座1的散热环11一个内侧面、一组过渡片4、碳化硅芯片3和连桥4的各接触表面涂上适量的纳米银焊膏，放入净化加热箱中60℃预烘15分钟。Step 3: Apply an appropriate amount of nano-silver solder paste to each contact surface of the heat dissipation ring 11 of the tube base 1, a set of transition pieces 4, the silicon carbide chip 3 and the connecting bridge 4 in the purification workbench, and put them into the purification workbench. Pre-bake at 60°C for 15 minutes in a heating box.
步骤4，将烧结工装的压头放置在叠装后的连桥4的表面，配重压力15MPa～20MPa；Step 4: Place the pressure head of the sintering tool on the surface of the stacked connecting bridge 4, with a counterweight pressure of 15MPa~20MPa;
步骤5，装配完成后，在265℃±15℃的含氮气氛中进行烧结，烧结时间20分钟～30分钟；Step 5: After the assembly is completed, sintering is performed in a nitrogen-containing atmosphere at 265°C ± 15°C. The sintering time is 20 to 30 minutes;
步骤6，将缓冲片5固定在管帽7上，压接力为0.7MPa±0.1MPa；Step 6: Fix the buffer sheet 5 on the pipe cap 7 with a crimping force of 0.7MPa±0.1MPa;
步骤7，将绝缘块6装入管座1内，将管座1和管帽7进行等离子焊封接，封焊电流为3A±0.5A，或者冷压封接，封接压力12MPa±1MPa。Step 7: Install the insulating block 6 into the pipe base 1, and perform plasma welding and sealing of the pipe base 1 and the pipe cap 7 with a sealing current of 3A ± 0.5A, or cold press sealing with a sealing pressure of 12MPa ± 1MPa.
所述步骤4中，配重压力的方向竖直向下，且与散热环11的内侧面垂直。In step 4, the direction of the counterweight pressure is vertically downward and perpendicular to the inner surface of the heat dissipation ring 11 .
本发明的一种压接结构的碳化硅器件及其制造方法，通过散热环多边形结构布局实现多个碳化硅芯片均流并联，通过散热环、连桥、上压块、下压块、缓冲片组成散热结构实现三维立体冷却，提高了器件通流能力；将碳化硅芯片通过纳米银低温烧结工艺实现互连，与现有硅基器件对比，碳化硅器件能工作在更高频率、更高温度下，可满足200℃～300℃的工作环境要求。A silicon carbide device with a press-fit structure and a manufacturing method thereof according to the present invention realize current sharing and parallel connection of multiple silicon carbide chips through the polygonal structure layout of the heat dissipation ring. The heat dissipation structure is formed to achieve three-dimensional cooling, which improves the device's flow capacity; the silicon carbide chips are interconnected through the nano-silver low-temperature sintering process. Compared with existing silicon-based devices, silicon carbide devices can operate at higher frequencies and higher temperatures. under, it can meet the working environment requirements of 200℃～300℃.
附图说明Description of the drawings
图1是传统硅基输出整流器件结构图。Figure 1 is a structural diagram of a traditional silicon-based output rectifier device.
图2是本发明压接结构的碳化硅器件主视结构图。Figure 2 is a front structural view of a silicon carbide device with a pressure-bonded structure according to the present invention.
图3是本发明碳化硅器件主剖视图。Figure 3 is a main cross-sectional view of the silicon carbide device of the present invention.
图4是本发明碳化硅器件俯剖视图。Figure 4 is a top cross-sectional view of the silicon carbide device of the present invention.
图中：1、管座，2、过渡片，3、碳化硅芯片，4、连桥，5、缓冲片，6、绝缘块，7、管帽，8、下压块，9、封接环，10、陶瓷环，11、散热环，12、座法兰，13、上压块，14、法兰。In the picture: 1. Pipe seat, 2. Transition piece, 3. Silicon carbide chip, 4. Bridge, 5. Buffer piece, 6. Insulating block, 7. Pipe cap, 8. Pressure block, 9. Sealing ring , 10. Ceramic ring, 11. Heat dissipation ring, 12. Seat flange, 13. Upper pressure block, 14. Flange.
具体实施方式Detailed ways
本发明的一种压接结构的碳化硅器件结构如图2-4所示，包括管座1、过渡片2、碳化 硅芯片3、连桥4、缓冲片5、绝缘块6和管帽7，管帽7安装于管座1上部；管座1包括依次连接的下压块8、封接环9、陶瓷环10、散热环11和座法兰12；管座1内部安装绝缘块6；散热环11内侧通过过渡片2安装碳化硅芯片3，碳化硅芯片3安装连桥4，连桥4连接下压块8。The structure of a silicon carbide device with a press-fit structure of the present invention is shown in Figures 2-4, including a tube base 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube cap 7 , the pipe cap 7 is installed on the upper part of the pipe base 1; the pipe base 1 includes a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 connected in sequence; an insulating block 6 is installed inside the pipe base 1; The silicon carbide chip 3 is installed inside the heat dissipation ring 11 through the transition piece 2. The silicon carbide chip 3 is installed with a connecting bridge 4, and the connecting bridge 4 is connected to the lower pressing block 8.
管座1由下压块8、封接环9、陶瓷环10、散热环11和座法兰12硬钎焊而成，散热环11外部为裙齿结构，内部为多边形结构，散热环11材质为无氧铜、钼铜合金或钨铜合金。The tube base 1 is brazed by a lower pressure block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12. The heat dissipation ring 11 has a skirt tooth structure on the outside and a polygonal structure on the inside. The heat dissipation ring 11 is made of It is oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
过渡片2、碳化硅芯片3和连桥4数量为多个，每个过渡片2、碳化硅芯片3和连桥4依次一一对应设置于结构相同的散热环11的内侧面上，连桥4与管座1的下压块8连接在一起，采用了纳米银低温烧结工艺。过渡片2为钼片，钼片表面镀银。碳化硅芯片3为方形，芯片电极区为银层，连桥4材质为银。There are multiple transition pieces 2, silicon carbide chips 3, and connecting bridges 4. Each transition piece 2, silicon carbide chip 3, and connecting bridge 4 are arranged in one-to-one correspondence on the inner surface of the heat dissipation ring 11 with the same structure. 4 is connected to the lower pressing block 8 of the tube base 1, using a nano-silver low-temperature sintering process. The transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is silver-plated. The silicon carbide chip 3 is square, the chip electrode area is a silver layer, and the connecting bridge 4 is made of silver.
管帽7由上压块13和法兰14硬钎焊而成。缓冲片5材质为银，一面固定在管帽7的上压块13上，另一面固定在绝缘块6上。管帽7与管座1采用等离子焊密封连接或冷压封接。The pipe cap 7 is brazed by the upper pressure block 13 and the flange 14. The material of the buffer sheet 5 is silver, one side is fixed on the upper pressing block 13 of the tube cap 7, and the other side is fixed on the insulating block 6. The pipe cap 7 and the pipe seat 1 are sealed by plasma welding or cold pressure sealing.
压接结构的碳化硅器件的制造方法，实施例1包括如下步骤：A method for manufacturing a silicon carbide device with a press-fit structure, Embodiment 1 includes the following steps:
步骤1，将纳米银焊膏搅拌充分；Step 1: Stir the nano-silver solder paste thoroughly;
步骤2，将管座、过渡片、碳化硅二极管芯片、连桥在异丙醇中超声清洗15分钟；Step 2: Ultrasonically clean the tube holder, transition piece, silicon carbide diode chip, and connecting bridge in isopropyl alcohol for 15 minutes;
步骤3，在净化工作台内将管座的散热环一个内侧接触表面涂上0.1mm厚的纳米银焊膏，一组过渡片、碳化硅二极管芯片的各接触表面涂上0.08mm厚的纳米银焊膏，连桥与下压块的接触表面涂上0.12mm厚的纳米银焊膏，放入净化加热箱中60℃预烘15分钟。Step 3: Apply 0.1mm thick nano-silver solder paste to an inner contact surface of the heat dissipation ring of the tube holder in the purification workbench, and apply 0.08 mm thick nano-silver paste to each contact surface of a set of transition pieces and silicon carbide diode chips. For solder paste, apply 0.12mm thick nano-silver solder paste on the contact surface between the bridge and the lower pressure block, and place it in a purification heating box at 60°C for pre-baking for 15 minutes.
步骤4，将烧结工装的压头放置在叠装后的连桥4的表面，配重压力18MPa，压力方向竖直向下且与散热环内侧面垂直；Step 4: Place the pressure head of the sintering tooling on the surface of the stacked connecting bridge 4, with a counterweight pressure of 18MPa, and the pressure direction is vertically downward and perpendicular to the inner surface of the heat dissipation ring;
步骤5，装配完成后，在265℃的含氮气氛中进行烧结，烧结时间25分钟；重复步骤3、步骤4、步骤5完成其余各组过渡片、碳化硅二极管芯片、连桥与管座散热环的内侧面以及下压块之间的烧结。 Step 5. After the assembly is completed, sintering in a nitrogen-containing atmosphere at 265°C for 25 minutes; repeat steps 3, 4, and 5 to complete the remaining sets of transition sheets, silicon carbide diode chips, connecting bridges, and tube base heat dissipation Sintering between the inner side of the ring and the lower pressing block.
步骤6，将缓冲片固定在管帽上，压接力为0.7MPa；Step 6: Fix the buffer sheet on the pipe cap with a crimping force of 0.7MPa;
步骤7，将绝缘块装入管座内，将管座和管帽进行等离子焊封接，封焊电流为3A±0.5A。Step 7: Install the insulating block into the pipe base, and perform plasma welding to seal the pipe base and pipe cap. The sealing welding current is 3A ± 0.5A.
实施例2包括如下步骤：Embodiment 2 includes the following steps:
步骤1，将纳米银焊膏搅拌充分；Step 1: Stir the nano-silver solder paste thoroughly;
步骤2，将管座、过渡片、碳化硅IGBT芯片、连桥在异丙醇中超声清洗15分钟；Step 2: Ultrasonically clean the tube holder, transition piece, silicon carbide IGBT chip, and connecting bridge in isopropyl alcohol for 15 minutes;
步骤3，在净化工作台内将管座的散热环一个内侧接触表面涂上0.1mm厚的纳米银焊膏，一组过渡片、碳化硅IGBT芯片的各接触表面涂上0.06mm厚的纳米银焊膏，放入净化 加热箱中60℃预烘15分钟。Step 3: Apply 0.1mm thick nano-silver solder paste to an inner contact surface of the heat dissipation ring of the tube holder in the purification workbench, and apply 0.06 mm thick nano-silver paste to each contact surface of a set of transition pieces and silicon carbide IGBT chips. Put the solder paste into a purification heating box and pre-bake it at 60°C for 15 minutes.
步骤4，将烧结工装的压头放置在叠装后的连桥4的表面，配重压力15MPa，压力方向竖直向下且与散热环内侧面垂直；Step 4: Place the pressure head of the sintering tooling on the surface of the stacked connecting bridge 4, with a counterweight pressure of 15MPa, and the pressure direction is vertically downward and perpendicular to the inner surface of the heat dissipation ring;
步骤5，装配完成后，在255℃的含氮气氮中进行烧结，烧结时间20分钟。重复步骤3、步骤4、步骤5完成其余各组过渡片、碳化硅IGBT芯片、连桥与管座散热环的内侧面之间的烧结；连桥与下压块之间采用高温焊片焊接。Step 5: After the assembly is completed, sinter in nitrogen-containing nitrogen at 255°C for 20 minutes. Repeat steps 3, 4, and 5 to complete the sintering between the remaining groups of transition pieces, silicon carbide IGBT chips, connecting bridges, and the inner side of the tube base heat dissipation ring; use high-temperature soldering pads to weld between the connecting bridges and the lower pressure block.
步骤6，将缓冲片固定在管帽上，压接力为0.7MPa；Step 6: Fix the buffer sheet on the pipe cap with a crimping force of 0.7MPa;
步骤7，将绝缘块装入管座内，将管座和管帽进行冷压封接，封接压力为12MPa。Step 7: Install the insulation block into the pipe base, and cold-press seal the pipe base and pipe cap with a sealing pressure of 12MPa.
具体的在本实施例步骤3中碳化硅IGBT芯片的发射极表面和栅极表面所涂纳米银焊膏型号不同，碳化硅IGBT芯片的栅极不配重。Specifically, in step 3 of this embodiment, the emitter surface and gate surface of the silicon carbide IGBT chip are coated with different types of nano-silver solder paste, and the gate of the silicon carbide IGBT chip is not weighted.
具体的在本实施例步骤5中，连桥与下压块之间在350℃真空焊接炉中焊接。Specifically, in step 5 of this embodiment, the connecting bridge and the lower pressing block are welded in a 350°C vacuum welding furnace.
本发明是通过实施例进行描述的，本领域技术人员知悉，在不脱离本发明的精神和范围的情况下，可以对这些特征和实施例进行各种改变或等效替换。另外，在本发明的教导下，可以对这些特征和实施例进行修改以适应具体的情况及材料而不会脱离本发明的精神和范围。因此，本发明不受此处所公开的具体实施例的限制，所有落入本申请的权利要求范围内的实施例都属于本发明的保护范围。The present invention has been described through embodiments. Those skilled in the art will know that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of the invention. In addition, the features and embodiments may be modified to adapt a particular situation and material to the teachings of the invention without departing from the spirit and scope of the invention. Therefore, the present invention is not limited to the specific embodiments disclosed here, and all embodiments falling within the scope of the claims of this application belong to the protection scope of the present invention.

Claims (9)

  1. 一种压接结构的碳化硅器件，其特征在于：包括管座(1)、过渡片(2)、碳化硅芯片(3)、连桥(4)、缓冲片(5)、绝缘块(6)和管帽(7)，管帽(7)安装于管座(1)上部；管座(1)包括依次连接的下压块(8)、封接环(9)、陶瓷环(10)、散热环(11)和座法兰(12)；管座(1)内部安装绝缘块(6)；散热环(11)内侧通过过渡片(2)安装碳化硅芯片(3)，碳化硅芯片(3)安装连桥(4)，连桥(4)连接下压块(8)。A silicon carbide device with a press-fit structure, which is characterized by: including a tube base (1), a transition piece (2), a silicon carbide chip (3), a connecting bridge (4), a buffer piece (5), and an insulating block (6 ) and the pipe cap (7), the pipe cap (7) is installed on the upper part of the pipe base (1); the pipe base (1) includes a lower pressure block (8), a sealing ring (9), and a ceramic ring (10) connected in sequence , heat dissipation ring (11) and seat flange (12); the insulating block (6) is installed inside the tube holder (1); the silicon carbide chip (3) is installed inside the heat dissipation ring (11) through the transition piece (2), and the silicon carbide chip (3) Install the connecting bridge (4), and the connecting bridge (4) is connected to the lower pressure block (8).
  2. 根据权利要求1所述的一种压接结构的碳化硅器件，其特征在于：所述管帽(7)包括上压块(13)和法兰(14)，上压块(13)和法兰(14)硬钎焊连接，缓冲片(5)材质为银，缓冲片(5)一面固定在上压块(13)上，缓冲片(5)另一面固定在绝缘块(6)上，管帽(7)与管座(1)等离子焊密封连接或冷压密封连接。A silicon carbide device with a press-fit structure according to claim 1, characterized in that the tube cap (7) includes an upper pressure block (13) and a flange (14), and the upper pressure block (13) and the flange (14) are The orchid (14) is connected by brazing, and the buffer piece (5) is made of silver. One side of the buffer piece (5) is fixed on the upper pressure block (13), and the other side of the buffer piece (5) is fixed on the insulating block (6). The pipe cap (7) and the pipe seat (1) are connected in a plasma welding or cold-pressed sealing manner.
  3. 根据权利要求1所述的一种压接结构的碳化硅器件，其特征在于：所述下压块(8)、封接环(9)、陶瓷环(10)、散热环(11)、座法兰(12)硬钎焊连接，散热环(11)外部为裙齿结构，散热环(11)内部为多边形结构，散热环(11)材质为无氧铜、钼铜合金或钨铜合金。A silicon carbide device with a press-fit structure according to claim 1, characterized in that: the lower pressing block (8), the sealing ring (9), the ceramic ring (10), the heat dissipation ring (11), the seat The flange (12) is connected by brazing, the outside of the heat dissipation ring (11) has a skirt tooth structure, the inside of the heat dissipation ring (11) has a polygonal structure, and the material of the heat dissipation ring (11) is oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
  4. 根据权利要求3所述的一种压接结构的碳化硅器件，其特征在于：所述每组过渡片(2)、碳化硅芯片(3)分别位于散热环(11)的一个内侧面上，过渡片(2)与碳化硅芯片(3)之间、碳化硅芯片(3)与连桥(4)之间，连桥(4)与下压块(8)之间分别纳米银低温烧结连接。A silicon carbide device with a press-fit structure according to claim 3, characterized in that: each set of transition pieces (2) and silicon carbide chips (3) are respectively located on an inner side of the heat dissipation ring (11), Nano-silver low-temperature sintering connections are used between the transition piece (2) and the silicon carbide chip (3), between the silicon carbide chip (3) and the connecting bridge (4), and between the connecting bridge (4) and the lower pressing block (8). .
  5. 根据权利要求1所述的一种压接结构的碳化硅器件，其特征在于：所述过渡片(2)为钼片，钼片表面镀银。A silicon carbide device with a press-fit structure according to claim 1, characterized in that: the transition piece (2) is a molybdenum piece, and the surface of the molybdenum piece is silver-plated.
  6. 根据权利要求1所述的一种压接结构的碳化硅器件，其特征在于：所述碳化硅芯片(3)是二极管芯片、IGBT芯片、MOS芯片中的一种或其组合，芯片形状为方形或圆形，芯片电极区为银层或金层。A silicon carbide device with a press-fit structure according to claim 1, characterized in that: the silicon carbide chip (3) is one of a diode chip, an IGBT chip, a MOS chip or a combination thereof, and the chip shape is square. Or round, the chip electrode area is a silver layer or a gold layer.
  7. 根据权利要求1所述的一种压接结构的碳化硅器件，其特征在于：所述连桥(4)材质为银，连桥(4)为至少一个，各个碳化硅芯片(3)之间安装连桥(4)，或者一个碳化硅芯片(3)与一个连桥(4)连接。A silicon carbide device with a press-fit structure according to claim 1, characterized in that: the material of the connecting bridge (4) is silver, there is at least one connecting bridge (4), and there is between each silicon carbide chip (3) Install the bridge (4), or connect a silicon carbide chip (3) to a bridge (4).
  8. 上述权利要求的一种压接结构的碳化硅器件制造方法，其特征在于：包括如下步骤：A method for manufacturing a silicon carbide device with a press-fit structure according to the above claim, which is characterized in that it includes the following steps:
    步骤1，准备纳米银焊膏；Step 1, prepare nano silver solder paste;
    步骤2，将管座(1)、过渡片(2)、碳化硅芯片(3)和连桥(4)在异丙醇中超声清洗；Step 2: Ultrasonically clean the tube base (1), transition piece (2), silicon carbide chip (3) and connecting bridge (4) in isopropyl alcohol;
    步骤3，在净化工作台内将管座(1)的散热环(11)一个内侧面、一组过渡片(4)、碳化硅芯片(3)和连桥(4)的各接触表面涂上适量的纳米银焊膏，放入净化加热箱中60℃预烘15分钟。Step 3: Coat an inner side of the heat dissipation ring (11) of the tube holder (1), a set of transition pieces (4), the silicon carbide chip (3) and the contact surfaces of the connecting bridge (4) in the purification workbench. Put an appropriate amount of nano-silver solder paste into a purification heating box and pre-bake it at 60°C for 15 minutes.
    步骤4，将烧结工装的压头放置在叠装后的连桥(4)的表面，配重压力15MPa～20MPa；Step 4: Place the pressure head of the sintering tool on the surface of the stacked connecting bridge (4), with a counterweight pressure of 15MPa~20MPa;
    步骤5，装配完成后，在265℃±15℃的含氮气氛中进行烧结，烧结时间20分钟～30分钟；Step 5: After the assembly is completed, sintering is performed in a nitrogen-containing atmosphere at 265°C ± 15°C. The sintering time is 20 to 30 minutes;
    步骤6，将缓冲片(5)固定在管帽(7)上，压接力为0.7MPa±0.1MPa；Step 6: Fix the buffer sheet (5) on the pipe cap (7) with a crimping force of 0.7MPa±0.1MPa;
    步骤7，将绝缘块(6)装入管座(1)内，将管座(1)和管帽(7)进行等离子焊封接，封焊电流为3A±0.5A，或者冷压封接，封接压力为12MPa±1MPa。Step 7: Install the insulating block (6) into the pipe base (1), and seal the pipe base (1) and the pipe cap (7) by plasma welding with a sealing current of 3A±0.5A, or by cold pressing. , the sealing pressure is 12MPa±1MPa.
  9. 上述根据权利要求8所述的一种压接结构的碳化硅器件制造方法，其特征在于：所述步骤4中，配重压力的方向竖直向下，且与散热环(11)的内侧面垂直。The above-mentioned method for manufacturing a silicon carbide device with a press-fit structure according to claim 8, characterized in that in step 4, the direction of the weight pressure is vertically downward and in contact with the inner surface of the heat dissipation ring (11). vertical.
PCT/CN2022/091330 2022-04-29 2022-05-07 Silicon carbide device having crimping structure and manufacturing method for silicon carbide device WO2023206594A1 (en)

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