CN109659280A - A kind of compression joint type IGBT internal enclosing structure - Google Patents
A kind of compression joint type IGBT internal enclosing structure Download PDFInfo
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- CN109659280A CN109659280A CN201811616144.4A CN201811616144A CN109659280A CN 109659280 A CN109659280 A CN 109659280A CN 201811616144 A CN201811616144 A CN 201811616144A CN 109659280 A CN109659280 A CN 109659280A
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- Prior art keywords
- igbt
- joint type
- compression joint
- type igbt
- frd chip
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- 230000006835 compression Effects 0.000 title claims abstract description 58
- 238000007906 compression Methods 0.000 title claims abstract description 58
- 238000003466 welding Methods 0.000 claims abstract description 35
- 238000003763 carbonization Methods 0.000 claims abstract description 33
- 239000000919 ceramic Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910000679 solder Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 15
- 238000012536 packaging technology Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 22
- 239000011733 molybdenum Substances 0.000 description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 17
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000002788 crimping Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910000989 Alclad Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Abstract
The present invention provides a kind of compression joint type IGBT internal enclosing structures being packaged in ceramic cartridge, the structure includes IGBT/FRD chip and carbonization sial, the carbonization sial is located at upper and lower two side of IGBT/FRD chip, and it is provided with welding layer between IGBT/FRD chip and carbonization sial, the upper and lower surface of the IGBT/FRD chip is equipped with metal layer.Carbonization sial-welding layer-IGBT/FRD chip-welding layer-carbonization sial internal structure of ceramic cartridge encapsulation compression joint type IGBT proposed by the present invention, enormously simplify the packaging technology operation of ceramic cartridge encapsulation compression joint type IGBT, the two-side radiation that ensure that compression joint type IGBT, meets that high current is through-flow and high reliability request.
Description
Technical field
The invention belongs to IGBT encapsulating structure technical fields, and in particular to one kind can be packaged in the crimping in ceramic cartridge
Formulas I GBT internal enclosing structure.
Background technique
The characteristics of IGBT is the multiple device of MOSFET and bipolar transistor, and existing MOSFET easily drives, and have power brilliant
The features such as body pipe high voltage, high current is universally acknowledged power electronics the third technical revolution mainstream product.
Compression joint type IGBT has two-side radiation, broader safety operation area (SOA), more compared with welded type IGBT
High working junction temperature, without lead, high reliability and the advantages such as short-circuit special characteristics that fail, in flexible direct current transmission converter valve
Device directly connects, application environment is harsh and the application field of high reliability request in the competitive advantage with highly significant.
The structure design of most of compression joint type IGBT is similar with the Conventional power devices such as thyristor, GTO, IGCT, and outside is adopted
It is encapsulated with ceramic cartridge, internal enclosing structure is different and different because manufacturing enterprise, and compression joint type IGBT enclosed inside knot
Structure is each manufacturing enterprise's technical protection limitation.
Currently, the internal structure of the ceramic cartridge encapsulation compression joint type IGBT of market public offering mainly has molybdenum sheet-IGBT/
FRD chip-molybdenum sheet structure (as shown in Figure 1), molybdenum sheet-IGBT/FRD chip-molybdenum sheet-silver strip structure (as shown in Figure 2), molybdenum sheet-
Silver-colored sinter layer-IGBT/FRD chip-molybdenum sheet-silver strip structure (as shown in Figure 3).Three of the above ceramic cartridge encapsulates compression joint type IGBT
Internal structure has particular/special requirement to the metal layer thickness of the emitter surface of packaged IGBT/FRD chip, it is desirable that IGBT/FRD
The more common welded type IGBT encapsulation IGBT/FRD chip emission pole surface AlSi1 metal layer of chip emission pole surface metal layer
It is thicker, realize the pressure buffering in crimping type packaging structure, while meeting the short circuit connection of compression joint type IGBT failure short-circuit mode.
There is the operation of packaging technology difficulty in the internal structure of the encapsulation compression joint type IGBT module of ceramic cartridge disclosed in market.Wherein molybdenum
Piece-IGBT/FRD chip-molybdenum sheet structure, molybdenum sheet-IGBT/FRD chip-molybdenum sheet-silver strip structure compression joint type IGBT device because of group
Arrangement is more, and chip, silver strip thinner thickness, and chip material is crisp, and silver strip material is soft, is mutually located relatively difficult to achieve, encapsulation work
Skill is complex, and in assembling process chip loss late it is larger.Molybdenum sheet-silver sinter layer-IGBT/FRD chip-molybdenum sheet-silver strip
Structure uses nanometer silver solder to realize being sintered to fix for chip collector and molybdenum sheet first, and it is slow as crimping to introduce silver-colored sinter layer
Layer is rushed, compared with molybdenum sheet-IGBT/FRD chip-molybdenum sheet structure, molybdenum sheet-IGBT/FRD chip-molybdenum sheet-silver strip structure, easily assembled
Property and chip loss late in terms of have a distinct increment, but the molybdenum sheet on emitter side-silver strip configuration aspects and have not been changed, there is also
It is mutually located relatively difficult to achieve, the complex problem of packaging technology.
Summary of the invention
Technical problem to be solved by the present invention lies in view of the above shortcomings of the prior art, provide a kind of compression joint type IGBT
Internal enclosing structure, the structure can be packaged in ceramic cartridge, use carbonization sial (AlSiC) layer, welding layer, IGBT/
FRD chip, welding layer, carbonization sial (AlSiC) layer structure design, can simplify the encapsulation of ceramic cartridge encapsulation compression joint type IGBT
Operating procedure can satisfy ceramic cartridge encapsulation compression joint type IGBT and encapsulate requirement simple for assembly process, that chip fragment rate is low.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of compression joint type IGBT internal enclosing structure,
The construction packages are in ceramic cartridge, it is characterised in that: including IGBT/FRD chip and carbonization sial, the carbonization sial
It is provided with welding layer positioned at upper and lower two side of IGBT/FRD chip, and between IGBT/FRD chip and carbonization sial, it is described
The upper and lower surface of IGBT/FRD chip is equipped with metal layer.
Above-mentioned a kind of compression joint type IGBT internal enclosing structure, it is characterised in that: the metal layer is Al/Ti/Ni/Ag
Four layers of integrated metal layer.
A kind of above-mentioned compression joint type IGBT internal enclosing structure, it is characterised in that: the metal layer with a thickness of 2um~
5um。
Above-mentioned a kind of compression joint type IGBT internal enclosing structure, it is characterised in that: the IGBT/FRD chip is Si base
IGBT/FRD chip.
Above-mentioned a kind of compression joint type IGBT internal enclosing structure, it is characterised in that: the solder of the welding layer is tin-lead silver
Or nano silver.
Above-mentioned a kind of compression joint type IGBT internal enclosing structure, it is characterised in that: the welding surface for the sial that is carbonized is coated with gold
Belong to Ni.
Compared with the prior art, the present invention has the following advantages:
1, it is presently believed that be carbonized sial (AlSiC) material and molybdenum since carbonization sial (AlSiC) material is compared with molybdenum
Coefficient of expansion CTE it is close with silicon wafer, but AlSiC purchase cost is low, and the thin alclad of AlSiC own face because material compared with
It is soft, the buffer layer at crimping interface can be preferably served as, realizes the good connection with ceramic cartridge copper contact electrode.Meanwhile carbon
SiClx aluminium (AlSiC) has preferable heating conduction, it may have it is two-sided scattered to can satisfy compression joint type IGBT for preferable electric conductivity
Heat and the demand for being electrically connected through-flow performance.In addition, AlSiC is easily realized and the weldering of the collector, emitter of IGBT/FRD chip
It connects, the integration of carbonization sial (AlSiC)-welding layer-IGBT/FRD chip-welding layer-carbonization sial (AlSiC) can be formed
Internal structure, convenient for the modularization assembling of compression joint type IGBT, packaging technology more simplifies.
2, compression joint type IGBT internal structure demand is encapsulated in conjunction with novel ceramic tube shell proposed by the present invention, in order to realize chip
The welding of emitter, collector and AlSiC, IGBT/FRD chip upper and lower surface metal layer preferably use Al/Ti/Ni/Ag tetra-
The integrated metal layer of layer, thickness about 2~5um are easier to realize and weld the flow path to form compression joint type IGBT with AlSiC and dissipate
Hot path；And welding layer forms between AlSiC and IGBT/FRD chip the buffer layer for bearing pressure deformation, in compression joint type IGBT
Under short-circuit conditions, the distinctive failure short-circuit mode of compression joint type IGBT is realized in welding layer refuse.
3, carbonization sial (AlSiC)-welding layer-IGBT/FRD of ceramic cartridge encapsulation compression joint type IGBT proposed by the present invention
Chip-welding layer-carbonization sial (AlSiC) internal structure enormously simplifies the encapsulation work of ceramic cartridge encapsulation compression joint type IGBT
Skill operation, ensure that the two-side radiation of compression joint type IGBT, meet that high current is through-flow and high reliability request.
Invention is further described in detail with reference to the accompanying drawings and examples.
Detailed description of the invention
Fig. 1 is tradition molybdenum sheet-IGBT/FRD chip-molybdenum sheet structural schematic diagram.
Fig. 2 is traditional molybdenum sheet-IGBT/FRD chip-molybdenum sheet-silver strip structural schematic diagram.
Fig. 3 is traditional molybdenum sheet-silver sinter layer-IGBT/FRD chip-molybdenum sheet-silver strip structural schematic diagram.
Fig. 4 is the compression joint type IGBT IGBT/FRD chip structure schematic diagram that tradition is equipped with surface metal-layer.
Fig. 5 is the welded type IGBT IGBT/FRD chip structure schematic diagram that tradition is equipped with surface metal-layer.
Fig. 6 is compression joint type IGBT internal enclosing structure schematic diagram of the present invention.
Fig. 7 is the compression joint type IGBT IGBT/FRD chip structure schematic diagram that the present invention is equipped with surface metal-layer.
Fig. 8 is the knot that the ceramic cartridge made of compression joint type IGBT internal enclosing structure of the present invention encapsulates compression joint type IGBT
Structure schematic diagram.
Description of symbols:
| 1-molybdenum sheet； | 2-IGBT/FRD chips； | 3-silver strips； |
| 4-silver-colored sinter layers； | The metal layer that 5-emitters thicken； | 6-collector electrode metal layers； |
| 7-emitter AlSi1 metal layers； | 8-ceramic cartridges； | 9—AlSiC； |
| 10-welding layers； | 11- metal layer. |
Specific embodiment
The present invention realizes the development of compression joint type IGBT, by carving to simplify ceramic cartridge compression joint type IGBT packaging technology
Bitter research of technique devises a kind of novel compression joint type IGBT internal structure being packaged in ceramic cartridge finally.Such as Fig. 6 institute
Show, which specifically includes IGBT/FRD chip 2 and carbonization sial 9, and the carbonization sial 9 is located at IGBT/FRD chip 2
Upper and lower two side, and IGBT/FRD chip 2 and carbonization sial 9 between be provided with welding layer 10, the IGBT/FRD core
The upper and lower surface of piece 2 is equipped with metal layer 11.
The present invention show that the material of metal layer 11 is preferably tetra- layers of Al/Ti/Ni/Ag integrated metal by test for several times
Layer, thickness is preferably 2um~5um.Tetra- layers of Al/Ti/Ni/Ag integrated metal layer are prepared using conventional method.IGBT/
FRD chip 2 preferably uses Si base IGBT/FRD chip.The solder that welding layer 10 uses is preferably tin-lead silver or nano silver.Carbonization
The welding surface of sial 9 is coated with W metal.
It is presently believed that since carbonization sial (AlSiC) material is with molybdenum compared with, carbonization sial (AlSiC) material and molybdenum
Coefficient of expansion CTE is close with silicon wafer, but AlSiC purchase cost is low, and the thin alclad of AlSiC own face because material compared with
It is soft, the buffer layer at crimping interface can be preferably served as, realizes the good connection with ceramic cartridge copper contact electrode.Meanwhile carbon
SiClx aluminium (AlSiC) has preferable heating conduction, it may have it is two-sided scattered to can satisfy compression joint type IGBT for preferable electric conductivity
Heat and the demand for being electrically connected through-flow performance.In addition, the surface AlSiC can nickel coating, be easier to realize and the collection of IGBT/FRD chip
The welding of electrode, emitter can form carbonization sial (AlSiC)-welding layer-IGBT/FRD chip-welding layer-carbonization sial
(AlSiC) integrated interior structure, convenient for the modularization assembling of compression joint type IGBT, packaging technology more simplifies.
Example as a comparison, the welded type IGBT IGBT/FRD chip structure equipped with surface metal-layer common at present
As shown in figure 5, IGBT emitter/FRD current collection pole surface metal layer is tetra- layers of Al/Ti/Ni/Ag integrated metal layer, thickness
About 2~5um is easy to be formed with solders such as tin-lead silver, nano silvers and weld；And IGBT collector/FRD emitter surface coating is
AlSi1, thickness are about 4~5um, are mainly electrically connected by aluminum wire bonding mode, can not be realized and are welded to connect by solder.
Compression joint type IGBT internal structure demand is encapsulated in conjunction with novel ceramic tube shell proposed by the present invention, in order to realize that chip is sent out
The welding of emitter-base bandgap grading, collector and AlSiC needs preferably to use Al/Ti/Ni/ using IGBT/FRD chip upper and lower surface metal layer
Tetra- layers of Ag integrated metal layer, thickness is about 2um~5um, as shown in Fig. 7, is easier to realize and welds to form compression joint type with AlSiC
The flow path and heat dissipation path of IGBT.And welding layer forms between AlSiC and IGBT/FRD chip and bears the slow of pressure deformation
Layer is rushed, under compression joint type IGBT short-circuit conditions, the distinctive failure short-circuit mode of compression joint type IGBT is realized in welding layer refuse.
The compression joint type IGBT internal structure in ceramic cartridge that the present invention designed be packaged in the preparation method comprises the following steps: firstly, logical
It crosses IGBT/FRD chip surface metallization process and produces particulate metal layer that novel ceramic tube shell encapsulation compression joint type IGBT needs
The IGBT/FRD chip of structure, specific structure is as shown in Figure 7；Then, using general tin-lead silver or nanometer silver solder, carbon is realized
Welding between SiClx aluminium (AlSiC) and IGBT/FRD chip forms carbonization sial (AlSiC)-welding layer-IGBT/FRD core
Piece-welding layer-carbonization sial (AlSiC) integrated interior structure, it is specific as shown in Figure 6；Finally, according to Welder will be passed through
Carbonization sial (AlSiC)-welding layer-IGBT/FRD chip-welding layer-carbonization sial (AlSiC) internal structure that skill is formed
It is assembled with ceramic cartridge, forms novel ceramic tube shell and encapsulate compression joint type IGBT, structure is as shown in Figure 8.
In conclusion carbonization sial (AlSiC)-welding layer-of ceramic cartridge encapsulation compression joint type IGBT proposed by the present invention
IGBT/FRD chip-welding layer-carbonization sial (AlSiC) internal structure enormously simplifies ceramic cartridge encapsulation compression joint type IGBT
Packaging technology operation, ensure that the two-side radiation of compression joint type IGBT, meet that high current is through-flow and high reliability request.
The above is only presently preferred embodiments of the present invention, is not intended to limit the invention in any way.It is all according to invention skill
Art any simple modification, change and equivalence change substantially to the above embodiments, still fall within technical solution of the present invention
Protection scope in.
Claims (6)
1. a kind of compression joint type IGBT internal enclosing structure, the construction packages are in ceramic cartridge (8), it is characterised in that: including
IGBT/FRD chip (2) and carbonization sial (9), carbonization sial (9) are located at upper and lower the two of IGBT/FRD chip (2)
Side, and be provided with welding layer (10) between IGBT/FRD chip (2) and carbonization sial (9), the IGBT/FRD chip (2)
Upper and lower surface be equipped with metal layer (11).
2. a kind of compression joint type IGBT internal enclosing structure according to claim 1, it is characterised in that: the metal layer (11)
For tetra- layers of Al/Ti/Ni/Ag integrated metal layer.
3. a kind of compression joint type IGBT internal enclosing structure according to claim 1, it is characterised in that: the metal layer (11)
With a thickness of 2um~5um.
4. a kind of compression joint type IGBT internal enclosing structure according to claim 1,2 or 3, it is characterised in that: the IGBT/
FRD chip (2) is Si base IGBT/FRD chip.
5. a kind of compression joint type IGBT internal enclosing structure according to claim 1,2 or 3, it is characterised in that: the welding
The solder of layer (10) is tin-lead silver or nano silver.
6. a kind of compression joint type IGBT internal enclosing structure according to claim 1,2 or 3, it is characterised in that: carbonization sial
The welding surface of layer (9) is coated with W metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811616144.4A CN109659280A (en) | 2018-12-27 | 2018-12-27 | A kind of compression joint type IGBT internal enclosing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811616144.4A CN109659280A (en) | 2018-12-27 | 2018-12-27 | A kind of compression joint type IGBT internal enclosing structure |
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| CN109659280A true CN109659280A (en) | 2019-04-19 |
Family
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| CN110208677A (en) * | 2019-05-24 | 2019-09-06 | 华中科技大学 | A kind of device measuring vertical structure power device blocking voltage |
| CN110416187A (en) * | 2019-06-28 | 2019-11-05 | 西安中车永电电气有限公司 | A kind of novel crimping Formulas I GBT internal enclosing structure |
| CN111463191A (en) * | 2020-04-16 | 2020-07-28 | 华中科技大学 | Stack type crimping packaging structure of silicon carbide DSRD |
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