CN114783966A - Silicon carbide device with compression joint structure and manufacturing method thereof - Google Patents
Silicon carbide device with compression joint structure and manufacturing method thereof Download PDFInfo
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- CN114783966A CN114783966A CN202210464050.XA CN202210464050A CN114783966A CN 114783966 A CN114783966 A CN 114783966A CN 202210464050 A CN202210464050 A CN 202210464050A CN 114783966 A CN114783966 A CN 114783966A
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
- 230000006835 compression Effects 0.000 title claims abstract description 14
- 238000007906 compression Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims abstract description 39
- 238000003825 pressing Methods 0.000 claims abstract description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000007704 transition Effects 0.000 claims abstract description 29
- 238000007789 sealing Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 238000009766 low-temperature sintering Methods 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 238000005476 soldering Methods 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 11
- 238000000746 purification Methods 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 3
- 238000003756 stirring Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Products (AREA)
Abstract
A silicon carbide device with a compression joint structure and a manufacturing method thereof comprise a tube seat, a transition piece, a silicon carbide chip, a connecting bridge, an insulating block, a buffer piece and a tube cap, wherein the tube cap is arranged on the upper part of the tube seat; the tube seat comprises a lower pressing block, a sealing ring, a ceramic ring, a heat dissipation ring and a seat flange which are connected in sequence; an insulating block is arranged in the tube seat; the buffer sheet is fixed between the pipe cap and the insulating block; the inner side of the heat dissipation ring is provided with a silicon carbide chip through a transition piece, the silicon carbide chip is provided with a connecting bridge, and the connecting bridge is connected with a lower pressing block. The heat dissipation ring is in polygonal structural layout to realize the current sharing and parallel connection of a plurality of silicon carbide chips, and the heat dissipation ring, the connecting bridge, the upper pressing block, the lower pressing block and the buffer sheet form a heat dissipation structure to realize three-dimensional cooling, so that the through-flow capacity of the device is improved; the silicon carbide chips are interconnected through a nano-silver low-temperature sintering process, and compared with the existing silicon-based device, the silicon carbide device can work at higher frequency and higher temperature and can meet the requirement of a working environment of 200-300 ℃.
Description
Technical Field
The invention relates to the technical field of electronic components.
Background
The output rectifying device of the crimping structure is an important component of the output rectifying device of the generator and is usually arranged above the generator. The traditional output rectifying device adopts a silicon-based chip, the maximum junction temperature can reach 230 ℃ theoretically, and most application requirements can be met. However, in the field of aircrafts and ships, with more applications of multi-electric or full-electric systems, part of rectifying devices need to reliably work at 225 ℃ for a long time, and therefore higher environmental adaptability requirements are provided for the devices.
As shown in fig. 1, compared with a silicon-based device, a conventional silicon-based output rectifying device has a junction temperature characteristic that is more excellent, but due to limitations of manufacturing technology and cost, a rated current of a single silicon carbide bare chip is usually within 100A, which is difficult to meet the power requirement of output rectification, and multiple cores are required to be connected in parallel for current sharing to improve the through-current capability.
The existing compression joint structure is a flat plate structure with double-sided heat dissipation and cooling, and the high-temperature resistant working characteristics of the silicon carbide device cannot be fully exerted.
Disclosure of Invention
In order to solve the above-mentioned problems of the conventional silicon carbide device, the present invention provides a silicon carbide device of a crimp structure and a method for manufacturing the same.
The technical scheme adopted by the invention for realizing the purpose is as follows: a silicon carbide device with a compression joint structure comprises a tube seat 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube cap 7, wherein the tube cap 7 is arranged at the upper part of the tube seat 1; the tube seat 1 comprises a lower pressing block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 which are connected in sequence; an insulating block 6 is arranged in the tube seat 1; the inner side of the heat dissipation ring 11 is provided with a silicon carbide chip 3 through a transition piece 2, the silicon carbide chip 3 is provided with a connecting bridge 4, and the connecting bridge 4 is connected with a lower pressing block 8.
The pipe cap 7 comprises an upper pressing block 13 and a flange 14, the upper pressing block 13 is connected with the flange 14 in a brazing mode, the buffer sheet 5 is made of silver, one surface of the buffer sheet 5 is fixed on the upper pressing block 13, the other surface of the buffer sheet 5 is fixed on the insulating block 6, and the pipe cap 7 is connected with the pipe seat 1 in a plasma welding sealing mode or a cold pressing sealing mode.
The lower pressing block 8, the sealing ring 9, the ceramic ring 10, the heat dissipation ring 11 and the seat flange 12 are connected in a brazing mode, the outer portion of the heat dissipation ring 11 is of a skirt tooth structure, the inner portion of the heat dissipation ring 11 is of a polygonal structure, and the heat dissipation ring 11 is made of oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
Each group of transition pieces 2 and silicon carbide chips 3 are respectively positioned on one inner side surface of the heat dissipation ring 11, and the nano-silver low-temperature sintering connection is respectively arranged between the transition pieces 2 and the silicon carbide chips 3, between the silicon carbide chips 3 and the connecting bridge 4, and between the connecting bridge 4 and the lower pressing block 8.
The transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is plated with silver.
The silicon carbide chip 3 is one or a combination of a diode chip, an IGBT chip and an MOS chip, the chip is square or round, and the electrode area of the chip is a silver layer or a gold layer.
The material of the connecting bridge 4 is silver, the number of the connecting bridges 4 is at least one, the connecting bridges 4 are arranged among the silicon carbide chips 3, or one silicon carbide chip 3 is connected with one connecting bridge 4.
A method for manufacturing a silicon carbide device with a compression joint structure comprises the following steps:
step 2, ultrasonically cleaning the tube seat 1, the transition piece 2, the silicon carbide chip 3 and the connecting bridge 4 in isopropanol;
and 3, coating a proper amount of nano silver soldering paste on the inner side surface of the heat dissipation ring 11 of the tube seat 1, the contact surfaces of the group of transition pieces 4, the silicon carbide chip 3 and the connecting bridge 4 in a purification workbench, and placing the purification workbench in a purification heating box for pre-baking for 15 minutes at the temperature of 60 ℃.
and 7, filling the insulating block 6 into the tube seat 1, and carrying out plasma welding sealing on the tube seat 1 and the tube cap 7 at a sealing current of 3A +/-0.5A or cold-pressing sealing at a sealing pressure of 12MPa +/-1 MPa.
In the step 4, the direction of the counterweight pressure is vertically downward and is perpendicular to the inner side surface of the heat dissipation ring 11.
According to the silicon carbide device with the compression joint structure and the manufacturing method thereof, the plurality of silicon carbide chips are connected in parallel and flow equalization through the polygonal structural layout of the radiating ring, and the radiating structure consisting of the radiating ring, the connecting bridge, the upper pressing block, the lower pressing block and the buffer sheet realizes three-dimensional cooling, so that the through-current capacity of the device is improved; the silicon carbide chips are interconnected through a nano-silver low-temperature sintering process, and compared with the existing silicon-based device, the silicon carbide device can work at higher frequency and higher temperature and can meet the requirement of a working environment of 200-300 ℃.
Drawings
Fig. 1 is a structural diagram of a conventional silicon-based output rectifying device.
Fig. 2 is a front view structural view of a silicon carbide device of the crimp structure of the present invention.
Figure 3 is a front cross-sectional view of a silicon carbide device of the present invention.
Fig. 4 is a top cross-sectional view of a silicon carbide device of the present invention.
In the figure: 1. the heat dissipation device comprises a tube seat, 2, a transition piece, 3, a silicon carbide chip, 4, a connecting bridge, 5, a buffer piece, 6, an insulating block, 7, a tube cap, 8, a lower pressing block, 9, a sealing ring, 10, a ceramic ring, 11, a heat dissipation ring, 12, a seat flange, 13, an upper pressing block, 14 and a flange.
Detailed Description
The silicon carbide device structure with the compression joint structure is shown in figures 2-4 and comprises a tube seat 1, a transition piece 2, a silicon carbide chip 3, a connecting bridge 4, a buffer piece 5, an insulating block 6 and a tube cap 7, wherein the tube cap 7 is arranged at the upper part of the tube seat 1; the tube seat 1 comprises a lower pressing block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12 which are connected in sequence; an insulating block 6 is arranged in the tube seat 1; the inner side of the heat dissipation ring 11 is provided with a silicon carbide chip 3 through a transition piece 2, the silicon carbide chip 3 is provided with a connecting bridge 4, and the connecting bridge 4 is connected with a lower pressing block 8.
The tube seat 1 is formed by brazing a lower pressing block 8, a sealing ring 9, a ceramic ring 10, a heat dissipation ring 11 and a seat flange 12, the outer portion of the heat dissipation ring 11 is of a skirt tooth structure, the inner portion of the heat dissipation ring 11 is of a polygonal structure, and the heat dissipation ring 11 is made of oxygen-free copper, molybdenum copper alloy or tungsten copper alloy.
The number of the transition pieces 2, the silicon carbide chips 3 and the connecting bridges 4 is multiple, each transition piece 2, each silicon carbide chip 3 and each connecting bridge 4 are sequentially arranged on the inner side surface of the heat dissipation ring 11 with the same structure in a one-to-one correspondence mode, the connecting bridges 4 are connected with the lower pressing blocks 8 of the tube seats 1 together, and a nano-silver low-temperature sintering process is adopted. The transition piece 2 is a molybdenum piece, and the surface of the molybdenum piece is plated with silver. The silicon carbide chip 3 is square, the electrode area of the chip is a silver layer, and the connecting bridge 4 is made of silver.
The pipe cap 7 is formed by brazing the upper pressing block 13 and the flange 14. The buffer sheet 5 is made of silver, one surface of the buffer sheet is fixed on the upper pressing block 13 of the pipe cap 7, and the other surface of the buffer sheet is fixed on the insulating block 6. The tube cap 7 and the tube seat 1 are sealed and connected by plasma welding or cold pressing.
A method for manufacturing a silicon carbide device of a compression bonded structure, embodiment 1 comprising the steps of:
step 2, ultrasonically cleaning the tube seat, the transition piece, the silicon carbide diode chip and the connecting bridge in isopropanol for 15 minutes;
and 3, coating nano-silver soldering paste with the thickness of 0.1mm on one inner side contact surface of the heat dissipation ring of the tube seat in the purification workbench, coating nano-silver soldering paste with the thickness of 0.08mm on each contact surface of a group of transition pieces and the silicon carbide diode chip, coating nano-silver soldering paste with the thickness of 0.12mm on the contact surface of the connecting bridge and the lower pressing block, and putting the connecting bridge and the lower pressing block into a purification heating box for pre-drying for 15 minutes at the temperature of 60 ℃.
and 7, filling the insulating block into the tube seat, and carrying out plasma welding sealing on the tube seat and the tube cap, wherein the sealing welding current is 3A +/-0.5A.
Example 2 comprises the following steps:
step 2, ultrasonically cleaning the tube seat, the transition piece, the silicon carbide IGBT chip and the connecting bridge in isopropanol for 15 minutes;
and 3, coating nano silver soldering paste with the thickness of 0.1mm on one inner side contact surface of the heat dissipation ring of the tube seat in the purification workbench, coating nano silver soldering paste with the thickness of 0.06mm on each contact surface of the transition piece and the silicon carbide IGBT chip, and putting the transition piece and the silicon carbide IGBT chip in a purification heating box for pre-drying for 15 minutes at the temperature of 60 ℃.
and 5, after the assembly is finished, sintering in nitrogen-containing gas at 255 ℃ for 20 minutes. Repeating the step 3, the step 4 and the step 5 to complete the sintering among the other groups of transition pieces, the silicon carbide IGBT chip, the connecting bridge and the inner side surface of the heat dissipation ring of the tube seat; the connecting bridge and the lower pressing block are welded by adopting a high-temperature soldering lug.
and 7, filling the insulating block into the tube seat, and carrying out cold-press sealing on the tube seat and the tube cap at the sealing pressure of 12 MPa.
Specifically, in step 3 of this embodiment, the nano-silver paste types coated on the surface of the emitter and the surface of the gate of the silicon carbide IGBT chip are different, and the gate of the silicon carbide IGBT chip is not weighted.
Specifically, in step 5 of the present embodiment, the bridge and the lower pressing block are welded in a vacuum welding furnace at 350 ℃.
While the invention has been described with reference to exemplary embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (9)
1. A silicon carbide device of a compression joint structure is characterized in that: the silicon carbide composite pipe comprises a pipe seat (1), a transition piece (2), a silicon carbide chip (3), a connecting bridge (4), a buffer piece (5), an insulating block (6) and a pipe cap (7), wherein the pipe cap (7) is arranged on the upper part of the pipe seat (1); the pipe seat (1) comprises a lower pressing block (8), a sealing ring (9), a ceramic ring (10), a heat dissipation ring (11) and a seat flange (12) which are connected in sequence; an insulating block (6) is arranged in the tube seat (1); the inner side of the heat dissipation ring (11) is provided with a silicon carbide chip (3) through a transition piece (2), the silicon carbide chip (3) is provided with a connecting bridge (4), and the connecting bridge (4) is connected with a lower pressing block (8).
2. A silicon carbide device of crimped structure according to claim 1, wherein: pipe cap (7) are including last briquetting (13) and flange (14), go up briquetting (13) and flange (14) brazing connection, and buffer chip (5) material is silver, and buffer chip (5) one side is fixed on last briquetting (13), and the buffer chip (5) another side is fixed on insulating block (6), and pipe cap (7) and tube socket (1) plasma welding sealing connection or cold pressing sealing connection.
3. A silicon carbide device of crimped construction according to claim 1, wherein: the lower pressing block (8), the sealing ring (9), the ceramic ring (10), the heat dissipation ring (11) and the seat flange (12) are connected in a brazing mode, the outer portion of the heat dissipation ring (11) is of a skirt tooth structure, the inner portion of the heat dissipation ring (11) is of a polygonal structure, and the heat dissipation ring (11) is made of oxygen-free copper, molybdenum-copper alloy or tungsten-copper alloy.
4. A silicon carbide device of crimped structure according to claim 3, wherein: each group of transition pieces (2) and silicon carbide chips (3) are respectively positioned on one inner side surface of the heat dissipation ring (11), and the transition pieces (2) are connected with the silicon carbide chips (3), the silicon carbide chips (3) are connected with the connecting bridge (4), and the connecting bridge (4) is connected with the lower pressing block (8) through nano-silver low-temperature sintering.
5. A silicon carbide device of crimped construction according to claim 1, wherein: the transition piece (2) is a molybdenum piece, and the surface of the molybdenum piece is plated with silver.
6. A silicon carbide device of crimped structure according to claim 1, wherein: the silicon carbide chip (3) is one or a combination of a diode chip, an IGBT chip and an MOS chip, the chip is square or round, and the electrode area of the chip is a silver layer or a gold layer.
7. A silicon carbide device of crimped structure according to claim 1, wherein: the material of the connecting bridge (4) is silver, the number of the connecting bridges (4) is at least one, the connecting bridges (4) are arranged among the silicon carbide chips (3), or one silicon carbide chip (3) is connected with one connecting bridge (4).
8. A method for manufacturing a silicon carbide device of a crimp structure according to the above claim, wherein: the method comprises the following steps:
step 1, preparing nano-silver soldering paste;
step 2, ultrasonically cleaning the tube seat (1), the transition piece (2), the silicon carbide chip (3) and the connecting bridge (4) in isopropanol;
and 3, coating a proper amount of nano silver soldering paste on the contact surfaces of one inner side surface of the heat dissipation ring (11) of the tube seat (1), the group of transition pieces (4), the silicon carbide chip (3) and the connecting bridge (4) in a purification workbench, and putting the purification workbench in a purification heating box for pre-drying for 15 minutes at the temperature of 60 ℃.
Step 4, placing a pressure head of the sintering tool on the surface of the stacked connecting bridge (4), and balancing the weight pressure to 15-20 MPa;
step 5, after the assembly is finished, sintering the materials in a nitrogen-containing atmosphere at 265 +/-15 ℃ for 20-30 minutes;
step 6, fixing the buffer sheet (5) on the pipe cap (7), wherein the compression joint force is 0.7MPa +/-0.1 MPa;
and 7, filling the insulating block (6) into the tube seat (1), and carrying out plasma welding sealing on the tube seat (1) and the tube cap (7) with the sealing current of 3A +/-0.5A or cold pressing sealing with the sealing pressure of 12MPa +/-1 MPa.
9. A method for manufacturing a silicon carbide device having a crimped structure according to claim 8, wherein: in the step 4, the direction of the counterweight pressure is vertically downward and is vertical to the inner side surface of the heat dissipation ring (11).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210464050.XA CN114783966A (en) | 2022-04-29 | 2022-04-29 | Silicon carbide device with compression joint structure and manufacturing method thereof |
| PCT/CN2022/091330 WO2023206594A1 (en) | 2022-04-29 | 2022-05-07 | Silicon carbide device having crimping structure and manufacturing method for silicon carbide device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210464050.XA CN114783966A (en) | 2022-04-29 | 2022-04-29 | Silicon carbide device with compression joint structure and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114783966A true CN114783966A (en) | 2022-07-22 |
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| CN202210464050.XA Pending CN114783966A (en) | 2022-04-29 | 2022-04-29 | Silicon carbide device with compression joint structure and manufacturing method thereof |
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| WO (1) | WO2023206594A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107887368A (en) * | 2017-10-13 | 2018-04-06 | 天津大学 | Using the method for the two-sided interconnection silicon substrate IGBT module of low-temperature sintering Nano Silver |
| CN210073809U (en) * | 2018-12-27 | 2020-02-14 | 西安中车永电电气有限公司 | Crimping type IGBT internal packaging structure |
| CN110379862B (en) * | 2019-07-07 | 2023-03-07 | 陕西航空电气有限责任公司 | Silicon carbide diode and manufacturing method thereof |
| CN110838480B (en) * | 2019-11-09 | 2021-04-16 | 北京工业大学 | Packaging structure and manufacturing method of silicon carbide MOSFET module |
| CN214898395U (en) * | 2021-06-21 | 2021-11-26 | 彰武同创销售服务中心 | Silicon carbide rectifier diode |
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2022
- 2022-04-29 CN CN202210464050.XA patent/CN114783966A/en active Pending
- 2022-05-07 WO PCT/CN2022/091330 patent/WO2023206594A1/en unknown
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| WO2023206594A1 (en) | 2023-11-02 |
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