WO2023206485A1 - 发光基板及制备方法、含有发光材料的溶液、发光装置 - Google Patents

发光基板及制备方法、含有发光材料的溶液、发光装置 Download PDF

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WO2023206485A1
WO2023206485A1 PCT/CN2022/090584 CN2022090584W WO2023206485A1 WO 2023206485 A1 WO2023206485 A1 WO 2023206485A1 CN 2022090584 W CN2022090584 W CN 2022090584W WO 2023206485 A1 WO2023206485 A1 WO 2023206485A1
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light
ligand
functional
emitting
luminescent
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PCT/CN2022/090584
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English (en)
French (fr)
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袁旭
张晓远
陈卓
李卓
张迪
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京东方科技集团股份有限公司
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Priority to CN202280001091.3A priority Critical patent/CN117356182A/zh
Priority to PCT/CN2022/090584 priority patent/WO2023206485A1/zh
Publication of WO2023206485A1 publication Critical patent/WO2023206485A1/zh

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  • the present disclosure relates to the field of display technology, and in particular, to a light-emitting substrate and a preparation method, a solution containing a light-emitting material, and a light-emitting device.
  • quantum dots Compared with organic luminescent materials, quantum dots have the advantages of high luminescence color purity and adjustable luminescence wavelength. Moreover, quantum dots have excellent photochemical stability and thermal stability. Therefore, quantum dots using quantum dots as luminescent materials emit light. Diodes are widely used in the display field.
  • a light-emitting substrate which includes a substrate and a first light-emitting device.
  • the first light-emitting device includes: a first electrode, a first functional layer, a first light-emitting pattern and a second electrode sequentially arranged in a direction away from the substrate, and the first functional layer is in contact with the first light-emitting pattern.
  • the first luminescent pattern includes a first luminescent material
  • the first luminescent material includes first luminescent particles and a first ligand combined with the first luminescent particles.
  • the first functional layer includes a first functional material, and the first functional material includes first functional particles and a second ligand combined with the first functional particles; the first ligand and the second ligand have the same development properties.
  • the particle size of the first functional particles is smaller than the particle size of the first luminescent particles.
  • the particle size of the first functional particles is 2 nm to 7 nm.
  • the first functional layer further includes a third ligand, the third ligand is combined with the first functional particle, and the chain length of the third ligand is smaller than the chain length of the first ligand; or, the third ligand is less than the chain length of the first photosensitive ligand, and the first ligand is the illumination product of the first photosensitive ligand.
  • the ratio of the second ligand to the sum of the second ligand and the third ligand is 1/2 to 2/3.
  • the first functional particle is an N-type semiconductor, a P-type semiconductor or an insulator.
  • the ratio of the thicknesses of the first functional layer and the first light-emitting pattern is 1/3 ⁇ 1/5.
  • the ratio of the number of first luminescent particles in the first luminescent pattern to the number of first functional particles in the first functional layer is 66/100 ⁇ 80/100.
  • both the first ligand and the second ligand are photoactive ligands.
  • both the first ligand and the second ligand are the irradiation products of the photosensitive ligand.
  • the light-emitting substrate further includes an auxiliary functional layer.
  • the auxiliary functional layer is located between the first electrode and the first functional layer.
  • the light-emitting substrate further includes a second light-emitting device.
  • the second light-emitting device includes a third electrode, a second functional layer, a second light-emitting pattern and a fourth electrode sequentially arranged in a direction away from the substrate, and the second functional layer is in contact with the second light-emitting pattern.
  • the second luminescent pattern includes a second luminescent material
  • the second luminescent material includes second luminescent particles and a fourth ligand combined with the second luminescent particles.
  • the second functional layer includes a second functional material, and the second functional material includes second functional particles and a fifth ligand combined with the second functional particles; the fourth ligand and the fifth ligand have the same development properties.
  • the second functional layer further includes a sixth ligand.
  • the sixth ligand is combined with the second functional particle, and the chain length of the sixth ligand is smaller than the chain length of the fifth ligand.
  • the first light emitting device further includes a first material layer.
  • the first material layer is located on the surface of the first light-emitting pattern away from the substrate.
  • the material of the first material layer is the same as the material of the second functional layer.
  • the light-emitting substrate further includes a third light-emitting device.
  • the third light-emitting device includes a fifth electrode, a third functional layer, a third light-emitting pattern and a sixth electrode that are sequentially arranged in a direction away from the substrate, and the third functional layer is in contact with the third light-emitting pattern.
  • the third luminescent pattern includes a third luminescent material
  • the third luminescent material includes third luminescent particles and a seventh ligand combined with the third luminescent particles.
  • the third functional layer includes a third functional material
  • the third functional material includes third functional particles and an eighth ligand combined with the third functional particles.
  • the seventh ligand and the eighth ligand have the same developing properties.
  • the third functional layer further includes a ninth ligand, the ninth ligand is combined with the third functional particle, and the chain length of the ninth ligand is smaller than the chain length of the eighth ligand.
  • the second light-emitting device further includes a second material layer, and the second material layer is located on the surface of the second light-emitting pattern away from the substrate; the second material layer The material is the same as the material of the third functional layer.
  • the particle diameters of the first light-emitting particles and the second light-emitting particles in the second light-emitting device are both larger than the particle diameter of the third light-emitting particles, and the first functional layer
  • the second functional layer in the second light-emitting device is a P-type semiconductor
  • the third functional layer is an N-type semiconductor.
  • a solution containing a luminescent material in another aspect, includes a first solvent and a first initial luminescent material and a first initial functional material dissolved in the first solvent.
  • the first initial luminescent material includes first luminescent particles and a first photosensitive ligand combined with the first luminescent particles.
  • the first initial functional material includes first functional particles and a second photosensitive ligand combined with the first functional particles. Wherein, the first photosensitive ligand and the second photosensitive ligand have the same photosensitive properties; the migration rate of the first initial functional material in the first solvent is greater than the migration rate of the first initial luminescent material in the first solvent.
  • the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent.
  • the particle size of the first functional particles is smaller than the particle size of the first luminescent particles.
  • the particle size of the first functional particles is 2 nm to 7 nm.
  • the solution containing the luminescent material further includes a third ligand, the third ligand is combined with the first functional particle, and the solubility of the third ligand in the first solvent is less than that of the first photosensitive ligand in the first solvent. solubility in .
  • the third ligand has a chain length that is less than the chain length of the first photoactive ligand.
  • the ratio of the second photosensitive ligand to the sum of the second photosensitive ligand and the third ligand is 1/2 to 2/3.
  • the first luminescent particle is CdS, CdSe, InP, ZnSe, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CdS/ZnS, CdSe/ZnS, PbS/ZnS, InP/ZnS, CsPbCl 3 /ZnS , CsPbBr 3 /ZnS or CsPhI 3 /ZnS.
  • the first functional particle is an N-type semiconductor, a P-type semiconductor or an insulator.
  • the ratio of the number of the first luminescent particles to the number of the first functional particles is 66/100 ⁇ 80/100.
  • a method for preparing a light-emitting substrate includes the following steps:
  • a first electrode is formed on the substrate. On the side of the first electrode away from the substrate, a first functional layer and a first light-emitting pattern are formed.
  • the first luminescent pattern includes a first luminescent material, and the first luminescent material includes first luminescent particles and a first ligand combined with the first luminescent particles.
  • the first functional layer includes a first functional material, and the first functional material includes first functional particles and a second ligand combined with the first functional particles; the first ligand and the second ligand have the same development properties.
  • a second electrode is formed on the side of the first light-emitting pattern away from the substrate; the first electrode, the first functional layer, the first light-emitting pattern and the second electrode constitute the first light-emitting device.
  • forming the first functional layer and the first light-emitting pattern on the side of the first electrode away from the substrate includes: coating the first mixed solution on the side of the first electrode away from the substrate to obtain a first mixed film;
  • the first mixed solution includes a first solvent and a first initial luminescent material and a first initial functional material dissolved in the first solvent.
  • the first initial luminescent material includes first luminescent particles and a first luminescent particle combined with the first luminescent particle.
  • Photosensitive ligand the first initial functional material includes a first functional particle and a second photosensitive ligand combined with the first functional particle; wherein the first photosensitive ligand and the second photosensitive ligand have the same photosensitive properties; the first initial function
  • the migration rate of the material in the first solvent is greater than the migration rate of the first initial luminescent material in the first solvent.
  • the first mixed film is mask-exposed and developed to obtain a first functional layer and a first luminescent pattern.
  • the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent.
  • performing mask exposure and development on the first mixed film to obtain the first functional layer and the first luminescent pattern includes: performing mask exposure on the first mixed film, and the first mixed film is located in the first area
  • the first photosensitive ligand and the second photosensitive ligand in the device generate a first photosensitive ligand and a second photosensitive ligand respectively under light radiation; the first area is the area where the first light-emitting device is located.
  • the first developing solution is used to dissolve and remove the portion of the exposed first mixed film located outside the first area to obtain the first functional layer and the first luminescent pattern.
  • the solubility of the first photosensitive ligand in the first developing solution is greater than the solubility of the first photochanging ligand in the first developing solution; the solubility of the second photosensitive ligand in the first developing solution is greater than that of the second photochanging ligand. Solubility of the body in the first developer.
  • performing mask exposure and development on the first mixed film to obtain the first functional layer and the first luminescent pattern includes: performing mask exposure on the first mixed film, and the first mixed film is located in the first area
  • the other first photosensitive ligand and the second photosensitive ligand respectively generate a first light-changing ligand and a second light-changing ligand under light radiation; the first area is the area where the first light-emitting device is located.
  • the second developer is used to dissolve and remove the exposed first mixed film located outside the first area to obtain the first functional layer and the first luminescent pattern.
  • the solubility of the first photosensitive ligand in the second developing solution is less than the solubility of the first photochanging ligand in the second developing solution; the solubility of the second photosensitive ligand in the second developing solution is less than the solubility of the second photochanging ligand. solubility in the second developer solution.
  • the step further includes forming a third electrode on the substrate.
  • a second functional layer and a second luminescent pattern are formed, wherein the material of the second luminescent pattern includes a second luminescent material, the second luminescent material includes second luminescent particles and a second luminescent particle.
  • the bound fourth ligand; the second functional material of the second functional layer, the second functional material includes the second functional particle and the fifth ligand combined with the second functional particle; the fourth ligand and the fifth ligand
  • a fourth electrode is formed on the side of the second light-emitting pattern away from the substrate; the third electrode, the second functional layer, the second light-emitting pattern and the fourth electrode constitute the second light-emitting device.
  • the step further includes forming a fifth electrode on the substrate.
  • a third functional layer and a third luminescent pattern are formed, wherein the material of the third luminescent pattern is a third luminescent material, and the third luminescent material includes third luminescent particles and is combined with the third luminescent particles.
  • the seventh ligand; the third functional material of the third functional layer, the third functional material includes the third functional particle and the eighth ligand combined with the third functional particle; the development of the seventh ligand and the eighth ligand The characteristics are the same.
  • a sixth electrode is formed on the side of the third light-emitting pattern away from the substrate; the fifth electrode, the third functional layer, the third light-emitting pattern and the sixth electrode constitute a third light-emitting device.
  • a light-emitting device in another aspect, includes the above-mentioned light-emitting substrate.
  • Figure 1 is a cross-sectional structural view of a light-emitting substrate according to some embodiments
  • Figure 2 is a cross-sectional structural view of a light-emitting substrate according to some embodiments.
  • Figure 3 is a top structural view of a light-emitting substrate according to some embodiments.
  • Figure 4 is an equivalent circuit diagram of a 3T1C according to some embodiments.
  • Figure 5 is a cross-sectional structural view of a light-emitting substrate according to some embodiments.
  • Figure 6 is a process diagram of a first hybrid film according to some embodiments.
  • Figure 7 is a process diagram of preparing a first light-emitting device according to some embodiments.
  • Figure 8 is a process diagram for preparing a first light-emitting device according to other embodiments.
  • Figure 9 is a process diagram of a combined thin film structure according to some embodiments.
  • Figure 10 is a cross-sectional structural view of a light-emitting substrate according to other embodiments.
  • Figure 11 is a process diagram for preparing a second light-emitting device according to some embodiments.
  • Figure 12 is a cross-sectional structural view of a light-emitting substrate according to other embodiments.
  • Figure 13 is a process diagram for preparing a third light-emitting device according to some embodiments.
  • Figure 14 is a comparison chart of the ultraviolet absorption spectra of ZnO, ZnO/GQD-Boc/CCl 3 and ZnO/GQD-Boc/NiO-AB/CCl 3 according to some embodiments;
  • Figure 15 is a luminescence diagram of ZnO/GQD-Boc/CCl 3 and ZnO/GQD-Boc/NiO-AB/CCl 3 under ultraviolet irradiation according to some embodiments.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
  • At least one of A, B and C has the same meaning as “at least one of A, B or C” and includes the following combinations of A, B and C: A only, B only, C only, A and B The combination of A and C, the combination of B and C, and the combination of A, B and C.
  • a and/or B includes the following three combinations: A only, B only, and a combination of A and B.
  • the term “if” is optionally interpreted to mean “when” or “in response to” or “in response to determining” or “in response to detecting,” depending on the context.
  • the phrase “if it is determined" or “if [stated condition or event] is detected” is optionally interpreted to mean “when it is determined" or “in response to the determination" or “on detection of [stated condition or event]” or “in response to detection of [stated condition or event]”.
  • parallel includes absolutely parallel and approximately parallel, and the acceptable deviation range of approximately parallel may be, for example, a deviation within 5°;
  • perpendicular includes absolutely vertical and approximately vertical, and the acceptable deviation range of approximately vertical may also be, for example, Deviation within 5°.
  • equal includes absolute equality and approximate equality, wherein the difference between the two that may be equal within the acceptable deviation range of approximately equal is less than or equal to 5% of either one, for example.
  • Example embodiments are described herein with reference to cross-sectional illustrations and/or plan views that are idealized illustrations.
  • the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shapes in the drawings due, for example, to manufacturing techniques and/or tolerances are contemplated.
  • example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result from, for example, manufacturing. For example, an etched area shown as a rectangle will typically have curved features. Accordingly, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the actual shapes of regions of the device and are not intended to limit the scope of the exemplary embodiments.
  • the light-emitting device includes a light-emitting substrate. Of course, it may also include other components. For example, it may include a circuit for providing an electrical signal to the light-emitting substrate to drive the light-emitting substrate to emit light.
  • the circuit may be called
  • the control circuit may include a circuit board and/or an integrated circuit (IC) electrically connected to the light-emitting substrate.
  • the light-emitting device may be a lighting device.
  • the light-emitting device is used as a light source to implement the lighting function.
  • the light-emitting device may be a backlight module in a liquid crystal display device, a lamp for internal or external lighting, or various signal lights.
  • the light-emitting device may be a display device.
  • the light-emitting substrate is a display substrate for realizing the function of displaying an image (ie, a picture).
  • the light emitting device may include a display or a product containing a display.
  • the display can be a flat panel display (Flat Panel Display, FPD), a microdisplay, etc. If divided according to whether the user can see the scene behind the display, the display can be a transparent display or an opaque display. Depending on whether the display can be bent or rolled, the display can be a flexible display or a normal display (which can be called a rigid display).
  • Examples of products containing displays may include: computer monitors, televisions, billboards, laser printers with display functions, telephones, mobile phones, personal digital assistants (Personal Digital Assistants, PDAs), laptops, digital cameras, camcorders Recorders, viewfinders, vehicles, large-area walls, theater screens or stadium signage, etc.
  • PDAs Personal Digital Assistants
  • laptops digital cameras
  • camcorders Recorders viewfinders
  • vehicles large-area walls, theater screens or stadium signage, etc.
  • the light-emitting substrate 1 includes a substrate 10, a driving circuit layer DCL disposed on the substrate 10, a pixel defining layer 12 and a plurality of 13 light-emitting devices.
  • the pixel definition layer 12 has a plurality of openings Q, and the plurality of light-emitting devices 13 can be arranged in one-to-one correspondence with the plurality of openings Q.
  • the plurality of light-emitting devices 13 here may be all or part of the light-emitting devices 13 included in the light-emitting substrate 1 ; the plurality of openings Q may be all or part of the openings on the pixel defining layer 12 .
  • the light-emitting substrate 1 can emit white light, monochromatic light (single color light) or color-adjustable light.
  • the light-emitting substrate 1 can emit white light.
  • the plurality of light-emitting devices 13 included in the light-emitting substrate 1 (for example, all the light-emitting devices 13) all emit white light.
  • the material of the light emitting pattern 133 in each light emitting device 13 may include a mixed material of red light emitting material, green light emitting material, and blue light emitting material.
  • each light-emitting device 13 can be driven to emit light to achieve white light emission.
  • the plurality of light-emitting devices 13 include a light-emitting device 13R that emits red light, a light-emitting device 13G that emits green light, and a light-emitting device 13B that emits blue light, wherein,
  • the material of the light-emitting pattern 133 in the light-emitting device 13R may include a red light-emitting material
  • the material of the light-emitting pattern 133 in the light-emitting device 13G may include a green light-emitting material
  • the material of the light-emitting pattern 133 in the light-emitting device 13B may include a blue light-emitting material.
  • the brightness of light emitted by the light emitting device 13R, the light emitting device 13G and the light emitting device 13B can be controlled so that the light emitting device 13R, the light emitting device 13G and the light emitting device 13B achieve mixed light, so that the light emitting substrate 1 presents white light.
  • the light-emitting substrate 1 can be used for lighting, that is, it can be applied in a lighting device.
  • the light-emitting substrate 1 can emit monochromatic light.
  • multiple light-emitting devices 13 for example, all the light-emitting devices 13 included in the light-emitting substrate 1 emit monochromatic light (such as red light).
  • the light-emitting pattern 133 in each light-emitting device 13 Materials include red luminescent materials.
  • each light-emitting device 13 can be driven to emit light to achieve red light emission.
  • the light-emitting substrate 1 has a structure similar to the multiple light-emitting devices described in the second case of the first example. At this time, the light-emitting device 13R, the light-emitting device 13G or the light-emitting device 13B can be driven individually. Achieve monochromatic light emission.
  • the light-emitting substrate 1 can be used for lighting, that is, it can be used in a lighting device, or it can be used to display a single-color image or picture, that is, it can be used in a display device.
  • the light-emitting substrate 1 can emit color-tunable light (i.e., colored light).
  • the light-emitting substrate 1 has a structure similar to the multiple light-emitting devices described in the second case of the first example. By controlling the brightness of each light-emitting device 13, the color and brightness of the mixed light emitted by the light-emitting substrate 1 can be controlled, and colored light emission can be achieved.
  • the light-emitting substrate can be used to display images or pictures, that is, it can be used in a display device.
  • the light-emitting substrate can also be used in a lighting device.
  • the light-emitting substrate 1 includes a display area A and a peripheral area S arranged around the display area A.
  • the display area A includes multiple sub-pixel areas Q', each sub-pixel area Q' corresponds to an opening Q, and each opening Q corresponds to a light-emitting device.
  • Each sub-pixel area Q' is provided with a light source for driving the corresponding light-emitting device to emit light.
  • Pixel driving circuit 200 The peripheral area S is used for wiring, such as the gate driving circuit 100 connected to the pixel driving circuit 200.
  • the pixel driving circuit 200 may include a thin film transistor and a capacitor.
  • the pixel driving circuit 200 may have a 2T1C structure.
  • the pixel driving circuit 200 may also have a 7T1C or 3T1C structure. As shown in FIG. 4 , a specific example in which the pixel driving circuit 200 has a 3T1C structure is shown.
  • the area of the red-emitting sub-pixel area Q' and the area of the green-emitting sub-pixel area Q' are The area is larger than the area of the sub-pixel area Q' that emits blue light. Further, the area of the sub-pixel area Q' that emits red light can be equal to the area of the sub-pixel area Q' that emits green light, or the area of the sub-pixel area Q' that emits red light. The area of Q' may be larger or smaller than the area of the green-emitting sub-pixel region Q'.
  • the above-mentioned display device may also include an encapsulation layer 14 and a light control layer 15 disposed on the display substrate.
  • the encapsulation layer 14 is used to protect the light-emitting device 13.
  • the light control layer 15 can control reflected light from the display substrate by external light.
  • the light control layer 15 may include a polarizer and/or a color filter layer (such as a CF (Color Film) layer).
  • the light-emitting material of the light-emitting device can be a quantum dot light-emitting material.
  • the corresponding light-emitting device can be called a quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes, QLED).
  • QLED is also used in the display field.
  • the preparation technologies for luminescent patterns in light-emitting devices mainly include inkjet printing technology, photolithography technology, transfer printing technology, etc. Among them, photolithography technology is the most promising method for preparing high-resolution QLEDs.
  • Photolithography technology that is, a technology that uses exposure and development to pattern quantum dots.
  • photolithography technology that is, a technology that uses exposure and development to pattern quantum dots.
  • the quantum dot luminescent material is a luminescent material present on the luminescent substrate, and the raw material for preparing the quantum dot luminescent material can be called a quantum dot initial luminescent material.
  • the initial luminescent material of quantum dots includes quantum dots and photosensitive ligands combined with the quantum dots.
  • Photosensitive ligands are ligands that can undergo decomposition reactions or cross-linking reactions under light.
  • the initial luminescent material of quantum dots After the initial luminescent material of quantum dots forms a thin film, it can be exposed using a mask. Some areas of the film are exposed and other areas are not exposed. In the exposed area of the film, the photosensitive ligand reacts under light to generate another ligand (to distinguish it from the photosensitive ligand, it can be called a photochromic ligand). Photochromic ligands and photosensitive ligands have different solubilities in the same developer. The solubility of the material containing quantum dots is mainly determined by the solubility of the ligand. That is, if the solubility of the ligand in the developer is high, the corresponding solubility of the material containing quantum dots in the developer will also be high.
  • the exposed areas and non-exposed areas in the film also have different solubilities in the same developer described above.
  • the developer removes the exposed areas or non-exposed areas in the film to obtain patterned quantum dot luminescent materials.
  • a sacrificial layer is used to pattern the quantum dot luminescent material. Specifically, before forming the quantum dot luminescent material, a sacrificial layer is first formed in the area where the initial quantum dot luminescent material needs to be removed, and the sacrificial layer elution method is used. Patterning quantum dot luminescent materials.
  • the patterning method requires a layer of quantum dot luminescent materials (such as red quantum dots (RQD)).
  • RQD red quantum dots
  • GQD Green Quantum Dot
  • this patterning method can avoid the residue of quantum dot luminescent materials, during the elution step, the quantum dot luminescent materials are continuously eluted, resulting in the loss of quantum dot luminescent materials, which is not conducive to the quantum dot luminescent materials. increase in usage.
  • a luminescent substrate that can use direct photolithography to pattern quantum dot luminescent materials, has little residue of the quantum dot luminescent materials, and has a pure luminescence spectrum.
  • a light-emitting substrate 1 including a substrate 10 and a first light-emitting device 20 .
  • the substrate 10 may be: inorganic material, organic material, silicon wafer or composite material layer, etc.
  • Inorganic materials can be, for example, glass, metal, etc.
  • organic materials for example, can be polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, Polyethersulfone, or its combination, etc.
  • the first light-emitting device 20 is part of the plurality of light-emitting devices, for example, one or several of the plurality of light-emitting devices. That is to say, the number of the first light-emitting device 20 is at least one (eg, multiple).
  • the first light emitting device 20 may be a red light emitting device, a green light emitting device or a blue light emitting device.
  • the first light emitting device 20 includes a first electrode 210 , a first functional layer 220 , a first light emitting pattern 230 and a second electrode 240 which are sequentially arranged in a direction away from the substrate 10 .
  • the layer where the first electrode 210 is located on the light-emitting substrate may be called the first electrode pattern layer 80A.
  • the layer on which the second electrode 240 is located on the light-emitting substrate may be called the second electrode pattern layer 80B.
  • the first electrode 210 and the second electrode 240 may be transmissive electrodes, partially transmissive partially reflective electrodes, or reflective electrodes.
  • the material of the transmissive electrode or the partially transmissive partially reflective electrode may include: conductive oxides such as zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), or fluorine-doped tin oxide, or metals TLC.
  • the reflective electrode may include a reflective metal, such as an opaque conductor such as aluminum (Al), silver (Ag), or gold (Au).
  • the first electrode 210 and the second electrode 240 may be a single-layer or multi-layer structure. At least one of the first electrode 210 or the second electrode 240 may be connected to the auxiliary electrode. If connected to the auxiliary electrode, the resistance of the second electrode 240 can be reduced.
  • the types of the first electrode 210 and the second electrode 240 can be set according to the light emitting mode of the light-emitting substrate 1 .
  • the light-emitting substrate 1 is divided according to the light emitting mode, and may include a top-emitting light-emitting substrate, a bottom-emitting light-emitting substrate, or a double-sided emitting light-emitting substrate.
  • the second electrode 240 may be a transmissive electrode
  • the first electrode 210 may be a reflective electrode
  • the first electrode 210 is a transmissive electrode
  • the second electrode 240 is a reflective electrode
  • both the first electrode 210 and the second electrode 240 are transmission electrodes.
  • first electrode 210 and the second electrode 240 is an anode, and the other is a cathode.
  • the first electrode 210 may be an anode, and in this case, the second electrode 240 may be a cathode.
  • the first electrode 210 may be a cathode, and in this case, the second electrode 240 may be an anode.
  • the anode may include a conductor with a high work function such as a metal, a conductive metal oxide, or a combination thereof.
  • the metal can be nickel, platinum, vanadium, chromium, copper, zinc, gold, or alloys thereof;
  • the conductive metal oxide can be zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO) , or fluorine-doped tin oxide; alternatively, the combination of metal and conductive metal oxide can be ZnO and Al, SnO and Sb or ITO/Ag/ITO, but is not limited to this.
  • the cathode may include a conductor such as a metal, conductive metal oxide, and/or conductive polymer that has a lower work function than the anode.
  • the cathode may include, for example, the metal may be aluminum, magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, silver, tin, lead, cesium, barium, etc., or alloys thereof; a multilayer structure such as LiF/ Al, Li 2 O/Al, Liq/Al, LiF/Ca, and BaF 2 /Ca;
  • the conductive metal oxide can be zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium oxide Zinc (Indium Zinc Oxides, IZO), or fluorine-doped tin oxide, but is not limited thereto.
  • the work function of the anode may be higher than the work function of the cathode, for example, the work function of the anode may be, for example, about 4.5 eV to about 5.0 eV and the work function of the cathode may be, for example, about 4.0 eV to about 4.7 eV.
  • the work function of the anode may be, for example, about 4.6 eV to about 4.9 eV or about 4.6 eV to about 4.8 eV
  • the work function of the cathode may be, for example, about 4.0 eV to about 4.6 eV or about 4.3 eV to about 4.6 eV.
  • first electrode 210 and the second electrode 240 may be set according to the type of the light-emitting substrate 1 .
  • the above-mentioned first light-emitting device 20 may be an "upright” light-emitting device or an "inverted” light-emitting device.
  • the first electrode 210 is an anode
  • the second electrode 240 is a cathode.
  • the light-emitting device is an "inverted" light-emitting device
  • the first electrode 210 is the cathode
  • the second electrode 240 is the anode.
  • the light-emitting principle of the first light-emitting device 20 is: through a circuit connected between the anode and the cathode, the anode is used to inject holes into the first light-emitting pattern 230, and the cathode is used to inject electrons into the first light-emitting pattern 230.
  • the formed electrons and holes are in the first light-emitting pattern 230.
  • Excitons are formed in the light-emitting pattern 230, and the excitons transition back to the ground state through radiation and emit photons.
  • the first light emitting pattern 230 includes a first light emitting material. In addition to the first light-emitting material, the first light-emitting pattern 230 also includes a small amount of the first functional material mixed in the first light-emitting material.
  • the first light-emitting pattern 230 is mainly composed of the first light-emitting material, and among all the constituent materials of the first light-emitting pattern 230, the first light-emitting material accounts for more than 90%.
  • the first luminescent material includes first luminescent particles 231 and a first ligand combined with the first luminescent particles 231 .
  • the first luminescent particles 231 may be quantum dots.
  • Quantum dots can be semiconductor nanocrystals and can have a variety of shapes such as spherical, conical, multi-armed and/or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplate particles, quantum rods, or quantum sheets.
  • the quantum rod may be a quantum dot having an aspect ratio (aspect ratio) (length:width ratio) greater than about 1, such as greater than or equal to about 2, greater than or equal to about 3, or greater than or equal to about 5.
  • the quantum rod may have an aspect ratio of less than or equal to about 50, less than or equal to about 30, or less than or equal to about 20.
  • Quantum dots may have a core-shell structure, for example, having a quantum dot core and a quantum dot shell surrounding the quantum dot core. Quantum dots may also have a structure with only quantum dot cores.
  • the material of the quantum dot core can be a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, a group IV semiconductor, a group I-III-VI semiconductor compound, or a group I-II-IV-VI semiconductor. compounds, II-III-V semiconductor compounds, or combinations thereof.
  • the II-VI semiconductor compound may, for example, be selected from binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or mixtures thereof.
  • Ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or mixtures thereof.
  • HgZnTeS HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or mixtures thereof, but are not limited thereto.
  • the III-V semiconductor compound may be selected from, for example: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or mixtures thereof; ternary compounds such as GaNP, GaNAs , GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, or mixtures thereof; and quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or mixtures thereof, but are not limited thereto.
  • Group IV-VI semiconductor compounds may, for example, be selected from: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, or mixtures thereof; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe , SnPbTe, or mixtures thereof; and quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, or mixtures thereof, but are not limited thereto.
  • the Group IV semiconductor may, for example, be selected from the group consisting of: elemental (unitary) semiconductors such as Si, Ge, or mixtures thereof; and binary semiconductor compounds such as SiC, SiGe, and mixtures thereof, but is not limited thereto.
  • the Group I-III-VI semiconductor compound may be, for example, CuInSe2, CuInS2, CuInGaSe, CuInGaS, or a mixture thereof, but is not limited thereto.
  • the Group I-II-IV-VI semiconductor compound may be, for example, CuZnSnSe, CuZnSnS, or a mixture thereof, but is not limited thereto.
  • the II-III-V semiconductor compound may include, for example, InZnP, but is not limited thereto.
  • the quantum dot shell is a compound having a composition different from that of the quantum dot core and including zinc (Zn), selenium (Se), and/or sulfur (S) elements.
  • the quantum dot shell may include one or more of ZnSeS, ZnSe, and ZnS.
  • Quantum dots can have a particle diameter (for non-spherical shapes, average maximum particle length), for example, from about 1 nm to about 100 nm, from about 1 nm to about 80 nm, from about 1 nm to about 50 nm, or from about 1 nm to 20 nm. It should be noted that, regardless of whether the quantum dot has a core-shell structure or a quantum dot core without a quantum dot shell, the color of light emitted by the quantum dot is determined by the quantum dot core. Therefore, the particle diameter or size of quantum dots refers to the particle diameter or size of the quantum dot core.
  • the particle diameter or size of the quantum dot refers to the average particle diameter or average size.
  • the following descriptions relate to the particle sizes of luminescent particles (eg, first luminescent particles, second luminescent particles, and third luminescent particles) and functional particles (eg, first functional particles, second functional particles, and third functional particles). ) refers to the average particle size.
  • the energy band gap of the quantum dots can be controlled based on their size and composition, and therefore the emission wavelength of the quantum dots can be controlled.
  • the quantum dot when the size of the quantum dot increases, the quantum dot may have a narrow energy band gap and therefore be configured to emit light in a relatively long wavelength region, whereas when the size of the quantum dot decreases, the quantum dot may have a broad energy band gap. bandgap and therefore configured to emit light in a relatively short wavelength region.
  • a quantum dot may be configured to emit light in a predetermined wavelength region of the visible light region depending on its size and/or composition.
  • the quantum dots may be configured to emit blue light, red light, or green light
  • the blue light may have a peak emission wavelength ( ⁇ max), for example, in about 430 nm to about 480 nm
  • the red light may have, for example, about 600 nm to about
  • the green light may have a peak emission wavelength ( ⁇ max) in 650 nm, for example, and the green light may have a peak emission wavelength ( ⁇ max) in about 520 nm to about 560 nm.
  • the average particle size of the quantum dots configured to emit blue light may be less than or equal to about 4.5 nm.
  • the average particle size of the quantum dots may be from about 2.0 nm to about 4.5 nm, such as from about 2.0 nm to about 4.3nm, and then about 2.0nm to about 4.0nm.
  • the average particle size of the quantum dots configured to emit green light is between 3 and 5 nm.
  • the average particle size of the quantum dots may be about 3.0 nm to about 4.0 nm, and for example, about 3.0 nm to about 4.4 nm.
  • Another example is about 3.8nm to about 5.0nm.
  • the average particle size of the quantum dots configured to emit green light is between 3.5 and 5.5 nm.
  • the average particle size of the quantum dots may be about 3.5 nm to about 4.6 nm, and for example, about 3.7 nm to about 5.0 nm. , such as about 4.1nm to about 5.5nm.
  • the first ligand is usually an organic ligand.
  • the organic ligand can be stably bound to the surface of the first luminescent particle 231 through bifunctional molecular coupling, hydrophobic interaction, silanization, electrostatic interaction, or polymer microsphere coating.
  • the organic ligand has a large dipole moment and can transfer exciton energy to the first luminescent particle 231, thereby enhancing the fluorescence intensity of the first luminescent particle 231; at the same time, the presence of the organic ligand can stabilize the first luminescent particle 231 and prevent The first luminescent particles 231 are reunited so that the first luminescent particles 231 are evenly dispersed.
  • the solvent used in the solution containing the first luminescent material is usually an organic solvent (organic solvents are usually insoluble in water and may also be called oily solvents). According to the principle of similar miscibility, the first luminescent particle 231 is difficult to dissolve in the organic solvent. Therefore, the solubility of the first luminescent material in the organic solvent depends on the solubility of the first ligand combined with the first luminescent particle 231 in the organic solvent. solubility.
  • the first functional layer 220 in the light-emitting substrate 1 can further improve the luminous efficiency of the first light-emitting device 20 .
  • the first functional layer 220 may be one of the carrier auxiliary layers.
  • the carrier auxiliary layer includes the electron injection layer (Electron Inject Layer, EIL), the electron transport layer (Electronic Transport Layer, ETL), the hole blocking layer (Hole Blocking Layer, HBL), the hole injection layer (Hole Injection Layer, HIL) ), at least one of a hole transport layer (Hole Transport Layer, HTL) and an electron blocking layer (Electron Blocking Layer, EBL).
  • the first functional layer 220 is located between the first electrode 210 and the first light emitting pattern 230 .
  • No other film layer may be included between the first functional layer 220 and the first electrode 210 , so that the first functional layer 220 is in contact with the first electrode 210 .
  • the contact between the first functional layer 220 and the first electrode 210 may also include one or several other layers, (such as the auxiliary functional layer 30 and the carrier auxiliary layer below in addition to the auxiliary functional layer 30 and the first functional layer. 220), in this case, the first electrode 210 is in contact with other film layers (such as the auxiliary function layer 30).
  • the first functional layer 220 is in contact with the first light emitting pattern 230.
  • the first functional layer 220 may have a function of increasing the transport rate of holes and reducing the transport rate of electrons, or may have a function of reducing the transport rate of holes and increasing the transport rate of electrons. In this way, according to the difference between the hole transmission rate and the electron transmission rate in the first light-emitting device 20, the first functional layer 220 can be provided to reduce the difference between the two, so that the hole transmission rate and the electron transmission rate are more balanced. , thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the luminous efficiency of the first light-emitting device 20.
  • the first functional layer 220 includes a first functional material. In addition to the first functional material, the first functional layer 220 also includes a small amount of the first light-emitting material mixed in the first functional material.
  • the first functional layer 220 is mainly composed of the first functional material. Among all the constituent substances of the first functional layer 220, for example, the proportion of the first luminescent material is less than 5% (under this condition, the color mixing phenomenon will not occur in the luminescent substrate 1). , other constituent substances are all first functional materials.
  • the first functional material includes first functional particles 221 and a second ligand combined with the first functional particles 221 .
  • the first functional particles 221 are particles that do not have luminescent properties and have a particle size similar to that of a quantum dot.
  • the first functional particles 221 may not have a shell structure.
  • the first functional particle 221 was tested for fluorescence quantum yield and showed no emission spectrum, that is, no emission peak.
  • the particle size of the first functional particles 221 may be equal to the particle size of the quantum dots, or smaller than the particle size of the quantum dots, or larger than the particle size of the quantum dots (for example, with reference to the following description, a third particle size smaller than the particle size of the quantum dots may be selected).
  • the first functional particles 221 are still nanomaterials, which are within the nanometer range in the three dimensions of length, width and height.
  • the first functional particle 221 is an N-type semiconductor, a P-type semiconductor or an insulator.
  • the P-type semiconductor may be a P-type semiconductor oxide.
  • P-type semiconductor oxide is a type of metal oxide that uses holes as carriers to conduct charges. The ratio of the number of metal and oxygen atoms is not strictly based on the ratio of the number of atoms in its chemical formula, but the number of oxygen atoms is slightly more. The structural defects present in the oxide are metal ion vacancies.
  • the P-type semiconductor oxide may be an oxide such as NiO x , MoO x , WO x , VO x or CrO x .
  • the P-type semiconductor may also be a P-type semiconductor non-oxide, such as CuI, SnS, CuSCN, etc.
  • P-type semiconductors use holes as carriers to conduct charges. Therefore, on the one hand, P-type semiconductors can promote the transmission and injection of holes. On the other hand, P-type semiconductors have a weak ability to transport electrons, so the rate of electron transport is relatively low. Low. Therefore, when the first functional particles 221 are P-type semiconductors, the first functional layer 220 can not only promote the transport and injection of holes, but also reduce the electron transport rate.
  • the first light-emitting device 20 is a "positive" light-emitting device
  • the first electrode 210 is an anode
  • the second electrode 240 is a cathode.
  • the electron transport rate in the first light-emitting device 20 is greater than the hole transport rate (for example, an electron transport layer is provided between the second electrode 240 and the first light-emitting pattern 230, for example, the material of the electron transport layer is ZnO)
  • the material of the first functional particles 221 of the first functional layer 220 may be a P-type semiconductor.
  • the first functional layer 220 is disposed between the first electrode 210 and the first light-emitting pattern 230.
  • the first functional layer 220 can promote the transmission and injection of holes, thereby increasing the number of holes in the first light-emitting device 20.
  • the transmission rate of the hole In this way, the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • the first light-emitting device 20 is an "inverted" light-emitting device
  • the first electrode 210 is a cathode
  • the second electrode 240 is an anode.
  • the transmission rate of electrons in the first light-emitting device 20 is greater than the transmission rate of holes (for example, an electron transport layer is provided between the first electrode 210 and the first light-emitting pattern 230, for example, the material of the electron transport layer is ZnO)
  • the material of the first functional particles 221 of the first functional layer 220 may be a P-type semiconductor.
  • the first functional layer 220 is disposed between the electron transport layer and the first light-emitting pattern 230 .
  • the first functional layer 220 conducts electrons at a low rate, thereby reducing the electron transmission rate in the first light-emitting device 20 . In this way, the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • the N-type semiconductor may be an N-type semiconductor oxide.
  • N-type semiconductor oxide is a type of metal oxide that uses electrons as carriers to conduct charges. The ratio of the number of metal atoms to oxygen atoms is not strictly based on the stoichiometric ratio, but the number of metal atoms is slightly higher.
  • the N-type semiconductor oxide can be ZnMgO, TiO 2 , SnO 2 or CdO, etc.
  • the N-type semiconductor may also be an N-type semiconductor non-oxide.
  • N-type semiconductor non-oxide For example, CsS, ZnF 2 or Cs 2 Se, etc.
  • N-type semiconductor uses electrons as carriers to conduct charges. Therefore, on the one hand, N-type semiconductor can promote the transmission and injection of electrons. On the other hand, N-type semiconductor has a weak ability to transport holes, so the rate of transporting holes is relatively low. Low. Therefore, when the first functional particles 221 are N-type semiconductors, the first functional layer 220 can not only promote the transport and injection of electrons, but also reduce the transport rate of holes.
  • the first light-emitting device 20 is a "positive" light-emitting device
  • the first electrode 210 is an anode
  • the second electrode 240 is a cathode.
  • the transmission rate of holes in the first light-emitting device 20 is greater than the transmission rate of electrons (for example, a hole transport layer is provided between the first electrode 210 and the first light-emitting pattern 230, for example, the material of the hole transport layer is NiO x )
  • the material of the first functional particles 221 of the first functional layer 220 may be an N-type semiconductor.
  • the first functional layer 220 is disposed between the hole transport layer and the first light emitting pattern 230 .
  • the first functional layer 220 has a low hole transport rate, thereby reducing the hole transport rate in the first light emitting device 20 . In this way, the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • the first light-emitting device 20 is an "inverted" light-emitting device
  • the first electrode 210 is a cathode
  • the second electrode 240 is an anode.
  • the transmission rate of holes in the first light-emitting device 20 is greater than the transmission rate of electrons (for example, a hole transport layer is provided between the first electrode 210 and the first light-emitting pattern 230, for example, the material of the hole transport layer is NiO x )
  • the material of the first functional particles 221 of the first functional layer 220 may be an N-type semiconductor.
  • the first functional layer 220 is disposed between the first electrode 210 and the first light-emitting pattern 230.
  • the first functional layer 220 can provide a part of electrons, thereby increasing the transmission rate of electrons in the first light-emitting device 20. In this way, the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • an insulator is an object that does not readily conduct electricity.
  • the insulator can be SiO 2 , ZrO 2 , HfO 2 or MgO.
  • Insulators cannot easily conduct electrons or holes. Therefore, when the first functional particles 221 are insulators, the first functional layer 220 can block holes and electrons.
  • the first light-emitting device 20 is a "positive" light-emitting device
  • the first electrode 210 is an anode
  • the second electrode 240 is a cathode.
  • the transmission rate of holes in the first light-emitting device 20 is greater than the transmission rate of electrons (for example, a hole transport layer is provided between the first electrode 210 and the first light-emitting pattern 230, for example, the material of the hole transport layer is NiO x )
  • the material of the first functional particles 221 of the first functional layer 220 can be an insulator.
  • the first functional layer 220 is disposed between the hole transport layer and the first light-emitting pattern 230 .
  • the first functional layer 220 can hinder the transport of holes, thereby reducing the hole transport rate in the first light-emitting device 20 .
  • the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • the first light-emitting device 20 is an "inverted" light-emitting device
  • the first electrode 210 is a cathode
  • the second electrode 240 is an anode.
  • the transmission rate of electrons in the first light-emitting device 20 is greater than the transmission rate of holes (for example, an electron transport layer is provided between the first electrode 210 and the first light-emitting pattern 230, for example, the material of the electron transport layer is ZnO)
  • the first The material of the first functional particles 221 of a functional layer 220 may be an insulator.
  • the first functional layer 220 is disposed between the electron transport layer and the first light-emitting pattern 230 .
  • the first functional layer 220 can hinder the transmission of electrons, thereby reducing the electron transmission rate in the first light-emitting device 20 .
  • the difference between the electron transfer rate and the hole transfer rate is reduced, and the hole transfer rate and the electron transfer rate are more balanced, thereby increasing the number of excitons formed in the first light-emitting pattern 230, thereby increasing the The luminous efficiency of the first light-emitting device 20.
  • the first light-emitting device 20 is an "inverted" light-emitting device
  • the first light-emitting device 20 when the first light-emitting device 20 is a light-emitting device that emits red light or a light-emitting device that emits green light, the first light-emitting device 20 may be a multi-electronic device, That is, the transmission speed of electrons is greater than the transmission speed of holes. Therefore, the material of the first functional particles 221 of the first functional layer 220 may be a P-type semiconductor.
  • the first light-emitting device 20 is an "inverted" light-emitting device
  • the first light-emitting device 20 when the first light-emitting device 20 is a light-emitting device that emits blue light, the first light-emitting device 20 may be a multi-hole device, that is, a hole-emitting device.
  • the transmission speed of is greater than the transmission speed of electrons. Therefore, the material of the first functional particles 221 of the first functional layer 220 may be an N-type semiconductor.
  • the second ligand can also be an organic ligand.
  • the binding method of the second ligand and the first functional particle 221 can refer to the binding method of the first ligand and the first luminescent particle 231, which will not be described again.
  • the presence of organic ligands can stabilize the first functional particles 221, prevent the first functional particles 221 from agglomerating, and allow the first functional particles 221 to be evenly dispersed.
  • the solubility of the first functional material is also mainly determined by the second ligand.
  • the first ligand may be a first photosensitive ligand or a first photochangeable ligand (that is, an illumination product of the first photosensitive ligand).
  • the specific ligand is determined by the manufacturing method of the first light-emitting pattern 230 .
  • whether the second ligand is a second photosensitive ligand or a second photochangeable ligand (ie, the illumination product of the second photosensitive ligand) is determined by the manufacturing method of the first functional layer 220 .
  • the first luminescent pattern 230 and the first functional layer 220 may be formed by exposure and development based on the first mixed film formed by the first mixed solution.
  • the first mixed solution includes a first solvent and a first initial luminescent material and a first initial functional material dissolved in the first solvent.
  • the first initial luminescent material is a raw material corresponding to the first luminescent material.
  • the first initial luminescent material includes first luminescent particles 231 and a first photosensitive ligand combined with the first luminescent particles 231 .
  • the first initial functional material is the raw material corresponding to the first functional material.
  • the first initial functional material includes first functional particles 221 and a second photosensitive ligand combined with the first functional particles 221 .
  • the first solvent is an organic solvent (oil solvent), which can be one or more of toluene, chloroform, heptane and octane.
  • the first mixed solution can be prepared by ligand exchange. Specifically, the following steps may be included:
  • a ligand (which can be called an initial ligand) is bound to its surface.
  • ligand exchange can be performed on the first luminescent particle 231 .
  • the first photosensitive ligand is exchanged with the initial ligand, so that the surface of the first luminescent particle 231 is bound to the first photosensitive ligand, thereby obtaining the first initial luminescent material.
  • the first initial luminescent material may be in a solution state, and its solvent is the first solvent.
  • the first initial functional material may be in a solution state, and its solvent is the first solvent.
  • the first initial luminescent material and the first initial functional material are mixed to obtain a first mixed solution.
  • the first mixed film 60 contains both the first initial functional material and the first initial luminescent material, and most of the first initial functional material is located below the first initial luminescent material, that is, close to the first electrode 210 .
  • the structure formed by the first initial light-emitting material may be called the first light-emitting part 62 of the first mixed film 60 (the structure is similar to the first light-emitting film 72 below).
  • the structure formed by the first initial functional material can be called the first functional part 61 of the first hybrid film 60 (the structure is similar to the first functional film 71 below).
  • the light used for exposure is, For example, ultraviolet rays (UV) can be irradiated onto the first functional part 61 through the first light-emitting part 62 .
  • UV ultraviolet rays
  • the energy of UV light is also stronger.
  • the first functional layer 220 and the first light-emitting pattern 230 can be formed in the first mixed film 60 through one exposure and one development.
  • the exposure step exposure is usually performed through a mask. There are openings on the mask, and light can shine through the opening to the bottom of the mask below.
  • the shape of the opening of the mask may correspond to the first light emitting pattern 230 , that is, correspond to the first area 20A.
  • the first area 20A is the area where the first light-emitting device 20 is located on the light-emitting substrate 1 .
  • the part of the first mixed film 60 located in the first area 20A is the exposure area.
  • the pattern shape located in the exposed area corresponds to the first light emitting pattern 230.
  • the first photosensitive ligand in the exposed area generates a first photochangeable ligand.
  • the first photosensitive ligand in the non-exposed area remains unchanged.
  • exposure of the second photosensitive ligand in the area generates a second photochangeable ligand.
  • the second photosensitive ligand in the non-exposed area remains unchanged.
  • the first photosensitive ligand and the first photovariable ligand have different solubilities in the developer. One of them can be dissolved by the developer and washed away, while the other can be solidified in the developer without being washed away by the developer. Whether the first photochangeable ligand is dissolved in the developer can be referred to as the developing characteristics of the first photochangeable ligand, or can also be referred to as the photosensitive characteristics of the first photosensitive ligand.
  • the second photosensitive ligand generates a second photochangeable ligand during the exposure step.
  • the second photosensitive ligand and the second photovariable ligand have different solubilities in the developer. One of them can be dissolved by the developer and washed away, while the other can be solidified in the developer without being washed away by the developer. Whether the second photochanging ligand is dissolved in the developer can be referred to as the developing characteristics of the second photochanging ligand, or can also be referred to as the photosensitive characteristics of the second photosensitive ligand.
  • the first light-emitting pattern 230 and the first functional layer 220 have the same shape. Therefore, it is required that the developing properties of the first ligand and the second ligand are the same (that is, the photosensitive properties of the first photosensitive ligand and the photosensitive properties of the second photosensitive ligand are the same), and the first ligand and the second ligand are simultaneously dissolved in in the same developer, or insoluble in the same developer at the same time.
  • the solubility of the first ligand in the developer solution and the solubility of the second ligand in the developer solution may be different.
  • the solubility of the first ligand in the developer solution is greater than that of the second ligand in the developer solution. solubility, and the difference between the two solubilities divided by the solubility of the first ligand in the developer is less than or equal to 40%.
  • the first ligand and the second ligand may be different ligands.
  • the solubility of the first ligand in the developer is less than the solubility of the second ligand in the developer, and the difference in solubility between the two divided by the solubility of the second ligand in the developer is less than or equal to 40%.
  • the first ligand and the second ligand may be different ligands.
  • the solubility of the first ligand in the developer solution and the solubility of the second ligand in the developer solution may also be the same.
  • the first ligand and the second ligand may be the same ligand.
  • the photosensitive properties of the first photosensitive ligand and the photosensitive properties of the second photosensitive ligand are the same, which means that when both the first photosensitive ligand and the second photosensitive ligand are exposed, the first photosensitive ligand and the second photosensitive ligand are generated.
  • the developing properties of the objects are the same, either they are washed away by the developer or they are not washed away by the developer.
  • the first photosensitive ligand and the second photosensitive ligand are not exposed, they have the same development characteristics, and they are both washed away by the developer or neither is washed away by the developer.
  • the first photochanging ligand and the second photochanging ligand are insoluble in the developing solution and are not washed away by the developing solution during the developing step.
  • the first photosensitive ligand and the second photochangeable ligand located in the non-exposed area maintain their original form and are washed away by the developer during the development step.
  • a developer that washes away material from non-exposed areas is called negative development. Patterning methods involving corresponding negative development can be called negative photolithography methods.
  • the first ligand is a first photochromic ligand.
  • the first ligand can be aminoethanethiol, MMES (mono[2-[(2-methyl-acryloyl)oxy]ethyl] succinate) cross-linked structure, or mercapto PEG acrylate cross-linked structure Or bromoethylamine.
  • the first photosensitive ligand may be 2-(tert-butoxycarbonyl-amino)ethanethiol (because the group of tert-butoxycarbonyl is simply called the Boc group.
  • 2-(tert-butoxycarbonyl- Amino)ethanethiol can be referred to as Boc), MMES (the double bonds of MMES are cross-linked after illumination, forming a large cross-linked structure, that is, MMES cross-linked structure), mercapto PEG acrylate (molecular weight 1K, cross-linked after illumination) Linked into a large cross-linked structure, that is, mercapto PEG acrylate cross-linked structure) or N-Boc-bromoethylamine (bromoethylamine is formed after illumination).
  • the developer can be one or more of chloroform, toluene, propylene glycol monomethyl ether acetate and octane.
  • the first photosensitive ligand includes 2-(tert-butoxycarbonyl-amino)ethanethiol
  • a photoacid generator such as 2,4-bis(trichloromethyl )-6-p-methoxystyryl-S-triazine (PAG)
  • PAG 2,4-bis(trichloromethyl )-6-p-methoxystyryl-S-triazine
  • 2-(tert-butoxycarbonyl-amino)ethanethiol can be desorbed under ultraviolet (UV) irradiation Remove the Boc group and change it to 2-aminoethanethiol, thereby changing the solubility.
  • UV ultraviolet
  • the photosensitive ligand includes MMES
  • such ligand has the following characteristics: one end has a double bond, a triple bond, an acrylate bond, an ethylene oxide bond, and other groups for light cross-linking, The other end has a coordination group: mercapto group, carboxyl group, amino group, etc.
  • TPO (2,4,6-trimethylbenzoyl)diphenylphosphine oxide
  • the second ligand is a second optically variable ligand.
  • the second ligand may be aminoethanethiol, MMES cross-linked structure, mercapto PEG acrylate cross-linked structure or bromoethylamine.
  • the second photoactive ligand can be 2-(tert-butoxycarbonyl-amino)ethanethiol, MMES, mercaptoPEG acrylate or N-Boc-bromoethylamine.
  • the second ligand and the first ligand may be the same or different.
  • the developer can be one or more of chloroform, toluene, propylene glycol monomethyl ether acetate and octane.
  • the opening of the mask is opposite to the first light-emitting pattern 230 , that is, corresponding to the area on the substrate 10 outside the first area 20A.
  • the exposed area is located outside the first area 20A. Therefore, in the first hybrid film 60 , the pattern shape located in the exposed area is opposite to the first light-emitting pattern 230 .
  • the first photosensitive ligand in the exposed area generates a first photochangeable ligand.
  • the first photosensitive ligand in the non-exposed area remains unchanged.
  • exposure of the second photosensitive ligand in the area generates a second photochangeable ligand.
  • the second photosensitive ligand in the non-exposed area remains unchanged.
  • the first photochanging ligand and the second photochanging ligand are dissolved in the developing solution and washed away by the developing solution during the developing step.
  • the first photosensitive ligand and the first photosensitive ligand located in the non-exposed area maintain their original form and are not washed away by the developer during the development step.
  • a developer that washes away material from exposed areas is called positive development.
  • Patterning methods involving corresponding positive-tone development can be called negative-tone photolithography methods.
  • the first ligand is a first photoactive ligand.
  • the first ligand is the same as the first photosensitive ligand, which can be 2-(tert-butoxycarbonyl-amino)ethanethiol, MMES, SH(CH 2 CH 2 O) n COCHCH 2 (mercapto PEG acrylate) , any one of N-Boc-bromoethylamine.
  • the developer can be methanol and/or ethanol.
  • the first photosensitive ligand is a Boc ligand. The Boc ligand generates aminoethanethiol after illumination. When developed with methanol or ethanol, the exposed area can be washed away, which is positive gel development.
  • the second ligand is a second photoactive ligand.
  • the second ligand is the same as the second photosensitive ligand, and can be any one of 2-(tert-butoxycarbonyl-amino)ethanethiol, MMES, mercapto PEG acrylate, and N-Boc-bromoethylamine.
  • the second ligand and the first ligand may be the same or different.
  • the developer can be methanol and/or ethanol.
  • the above embodiment is an embodiment of the first mixed film 60 formed from the first mixed solution.
  • the first mixed film 60 only undergoes one film forming step, which can be called a single-layer preparation process.
  • a layered preparation process may also be used. That is, the first functional film 71 is first formed on the first electrode 210 or the auxiliary functional layer 30 , and then the first luminescent film 72 is formed on the first functional film 71 .
  • the combined film structure 70 formed by the first functional film 71 and the first light-emitting film 72 is similar to the structure of the first mixed film 60 .
  • the first luminescent pattern 230 and the first functional layer 220 are formed by exposure and development based on the combined film structure 70 formed by the first functional film 71 and the first luminescent film 72 .
  • the first functional film 71 may be formed by coating with a first functional solution.
  • the first functional solution includes a third solvent and a first initial functional material dissolved in the third solvent.
  • the first initial functional material is the raw material corresponding to the first functional material.
  • the first initial functional material includes first functional particles 221 and a second photosensitive ligand combined with the first functional particles 221 .
  • the third solvent is an organic solvent (oil solvent), which can be one or more (for example, one of them) of toluene, chloroform, heptane and octane.
  • the first luminescent film 72 may be formed by coating with a first luminescent solution.
  • the first luminescent solution includes a second solvent and a first initial luminescent material dissolved in the second solvent.
  • the first initial luminescent material is a raw material corresponding to the first luminescent material.
  • the first initial luminescent material includes first luminescent particles 231 and a first photosensitive ligand combined with the first luminescent particles 231 .
  • the second solvent is an organic solvent (oil solvent), which may be one or more (for example, one of them) of toluene, chloroform, heptane and octane. Wherein, the second solvent and the third solvent may be the same or different.
  • the combined film structure 70 formed by the first functional film 71 and the first luminescent film 72 is similar to the structure of the first mixed film 60 .
  • the thickness of the first light emitting film 72 is substantially the same as the thickness of the structure formed by the first light emitting part 62 in the first mixed film 60 .
  • the thickness of the first functional film 71 is substantially the same as the thickness of the first functional portion 61 in the first hybrid film 60 . In this way, the first functional layer 220 and the first light-emitting pattern 230 can also be formed in the combined film structure 70 through one exposure and one development.
  • the first ligand is a first optically variable ligand.
  • the first ligand may be aminoethanethiol, MMES cross-linked structure, mercapto PEG acrylate cross-linked structure or bromoethylamine.
  • the first photosensitive ligand may be 2-(tert-butoxycarbonyl-amino)ethanethiol, MMES, mercaptoPEG acrylate or N-Boc-bromoethylamine.
  • the developer can be one or more of chloroform, toluene, propylene glycol monomethyl ether acetate and octane.
  • the second ligand is a second optically variable ligand.
  • the second ligand may be aminoethanethiol, MMES cross-linked structure, mercapto PEG acrylate cross-linked structure or bromoethylamine.
  • the second photosensitive ligand can be 2-(tert-butoxycarbonyl-amino)ethanethiol, MMES, mercaptoPEG acrylate or N-Boc-bromoethylamine.
  • the second ligand and the first ligand may be the same or different.
  • the developer can be one or more of chloroform, toluene, propylene glycol monomethyl ether acetate and octane.
  • the first ligand is a first photosensitive ligand.
  • the first ligand is the same as the first photosensitive ligand, and can be any one of Boc, MMES, mercapto PEG acrylate, and N-Boc-bromoethylamine.
  • the developer can be methanol and/or ethanol.
  • the second ligand is a second photoactive ligand.
  • the second ligand is the same as the second photosensitive ligand, and can be any one of Boc, MMES, mercaptoPEG acrylate, and N-Boc-bromoethylamine.
  • the second ligand and the first ligand may be the same or different.
  • the developer can be methanol and/or ethanol.
  • the incomplete elution of quantum dot luminescent materials is mainly due to the interaction between the film layer in contact with the quantum dots and the quantum dots, such as physical adsorption (van der Waals force, capillary force, hydrogen bonding), chemical interaction (quantum dots)
  • the ligands form bonds with the atoms in the film), and the quantum dots are adsorbed on the film. This interaction force is relatively weak.
  • the first electrode 210, the first functional layer 220, and the first light-emitting pattern 230 are sequentially arranged in a direction away from the substrate 10.
  • the first functional layer 220 is closer to the first electrode than the first light-emitting pattern 230.
  • the first luminescent pattern 230 is located on the first functional layer 220. Therefore, in the production process, the first initial functional material is located below the first initial luminescent pattern.
  • the first initial functional material or the first initial functional material after exposure will be incompletely eluted in the area outside the first optical device of the light-emitting substrate 1, leaving a small amount of The first functional particle 221. Since this interaction force is relatively weak and the development characteristics of the first ligand and the second ligand are the same, the first initial luminescent material or the first initial luminescent material after exposure is washed away by the developer with very little remain on the first functional particles 221 .
  • the second light-emitting device 40 is provided on a small amount of remaining first functional particles 221. Since the first functional particles 221 does not emit light, so there is no problem of color mixing, and only the light of the corresponding color generated by the excitation of the second light-emitting particles 431 in the second light-emitting device 40 is displayed. Therefore, the problem of the first light-emitting material remaining on the light-emitting substrate 1 is less likely to occur, and the probability of color mixing problems is reduced.
  • the particle size of the first functional particles 221 is smaller than the particle size of the first luminescent particles 231 . Because the particle size will affect the migration rate of particles in the solution. Particles with smaller sizes migrate faster in solution than particles with larger sizes.
  • the production of the first functional layer 220 and the first light-emitting pattern 230 can be adapted to the single-layer preparation process.
  • the first initial luminescent material and the first initial functional material can be dissolved in the same solvent to prepare a first mixed solution (since the first mixed solution includes the first luminescent particles 231, it can also be called a luminescent solution containing material solution).
  • the migration rate of the first functional particles 221 is greater than the migration rate of the first luminescent particles 231, so the migration rate of the first initial functional material is greater than the migration rate of the first initial luminescent material.
  • the first initial functional material It can be combined with the auxiliary functional layer 30 or the first electrode 210 more quickly.
  • the first functional layer can be formed in the first mixed film 60 through one exposure and one development. 220 and the first luminous pattern 230 . Therefore, in the case where the particle size of the first functional particles 221 is smaller than the particle size of the first luminescent particles 231, the production of the first functional layer 220 and the first luminescent pattern 230 can be adapted to combine the first initial luminescent material and the first initial luminescent material.
  • the process of making the first mixed film 60 from the functional material shortens the process of forming the film and improves the production efficiency.
  • the production of the first functional layer 220 and the first light-emitting pattern 230 can also be adapted to the layered preparation process.
  • the particle size of the first functional particles 221 is 2 nm to 7 nm. In this way, when the first functional layer 220 and the first light-emitting pattern 230 are manufactured using a single-layer manufacturing process, the first initial functional material migrates faster and can be quickly combined with the auxiliary functional layer 30 or On the first electrode 210, the amount of the first initial functional material located under the first initial luminescent material in the single-layer preparation process is further increased, so the luminescent substrate 1 is less likely to have the problem of the first luminescent material remaining, and further The probability of color mixing problems occurring in the first light-emitting device 20 is reduced.
  • the first functional layer 220 further includes a third ligand, and the third ligand is combined with the first functional particle 221 .
  • the chain length of the third ligand is smaller than the chain length of the first ligand.
  • the third ligand may be a photosensitive ligand with a chain length smaller than that of the first ligand.
  • the third ligand can also be a non-photosensitive ligand with a chain length smaller than that of the first ligand.
  • the third ligand can be pentanethiol, hexanethiol, ethyl thioacetate, valeric acid or hexylamine. and other ligands.
  • the fabrication of the first functional layer 220 and the first light-emitting pattern 230 can be adapted to the single-layer fabrication process.
  • the first ligand in the first functional layer 220 is a first photosensitive ligand, that is, during the exposure step, the first ligand and the third ligand in the first functional layer 220 are in a non-exposed position in the first mixed film 60 area.
  • the first solvent used in the solution containing the luminescent material is an organic solvent.
  • the solubility of the third ligand in the first solvent is less than the solubility of the first ligand in the first solvent.
  • the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent. In this way, the first initial functional material is more likely to precipitate in the first solvent, settle downward, and combine with the auxiliary functional layer 30 or the first electrode 210, so that the first initial functional material is located below the first initial luminescent material. Therefore, the light-emitting substrate 1 is less likely to have the problem of the first light-emitting material remaining, further reducing the probability of the light-emitting substrate 1 having color mixing problems.
  • the first functional layer 220 and the first light-emitting pattern 230 may also be manufactured using a layered manufacturing process.
  • the first functional layer 220 further includes a third ligand, and the third ligand is combined with the first functional particle 221 .
  • the chain length of the third ligand is smaller than the chain length of the first photosensitive ligand, and the first ligand is the illumination product of the first photosensitive ligand.
  • the third ligand may be a non-photosensitive ligand with a chain length smaller than that of the first ligand.
  • the fabrication of the first functional layer 220 and the first light-emitting pattern 230 can be adapted to the single-layer fabrication process.
  • the first ligand in the first functional layer 220 is the illumination product of the first photosensitive ligand. That is, in the exposure step, the first ligand in the first functional layer 220 is in the exposed area in the film structure.
  • the first photosensitive ligand that is combined with the first initial luminescent material.
  • the solubility of the third ligand in the first solvent is smaller than the solubility of the first photosensitive ligand in the first solvent.
  • the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent.
  • the first initial functional material is more likely to precipitate in the first solvent, settle downward, and combine with the auxiliary functional layer 30 or the first electrode 210, so that the first initial functional material is located below the first initial luminescent material. Therefore, the light-emitting substrate 1 is less likely to have the problem of the first light-emitting material remaining, further reducing the probability of the light-emitting substrate 1 having color mixing problems.
  • the ratio of the number of the second ligand to the sum of the number of the second ligand and the number of the third ligand is 1/2 ⁇ 2/3.
  • All the second ligands and the third ligands bound to the first functional particle 221 may be called total ligands. Since the second ligand is the key to forming the first functional layer 220 of the first mixed film 60 or the combined film structure 70 through exposure and development, the number of the second ligand needs to be relatively large.
  • the function of the third ligand is to reduce the solubility of the first initial functional material, thereby increasing the migration rate of the first initial functional material in the solution containing the luminescent material, thereby increasing its mobility on the auxiliary functional layer 30 or the first electrode 210 Adsorption rate.
  • the solubility of the first initial functional material in the solution containing the luminescent material only needs to meet the condition of being smaller than the solubility of the first initial luminescent material.
  • the first initial function can also be achieved.
  • the adsorption rate of the material on the auxiliary functional layer 30 or the first electrode 210 is greater than the adsorption rate of the first initial light-emitting material on the auxiliary functional layer 30 or the first electrode 210 . Therefore, the number of third ligands can be relatively small.
  • the number of the second ligand accounts for 1/2-2/3 of the total number of ligands, and the number of the second ligand accounts for 1/3-1/2 of the total number of ligands, which is more appropriate.
  • the ratio of the number of the first luminescent particles 231 to the sum of the number of the first luminescent particles 231 and the number of the first functional particles 221 is 66/100 ⁇ 80/100.
  • All first luminescent particles 231 and all first functional particles 221 in the first luminescent pattern 230 may be called total particles.
  • the first functional particles 221 only need to be adsorbed on the auxiliary functional layer 30 or the first electrode 210 in one layer to separate the first luminescent particles 231 . Therefore, the number of the first functional particles 221 can be relatively small.
  • the first luminescent particles 231 are the key structure for the first light-emitting device 20 to emit light, and their number is related to the intensity of light emitted by the first light-emitting device 20. Therefore, the number of the first luminescent particles 231 should be such that the first luminescent particles 231 can be in one layer.
  • the first functional particles 221 are covered with 2 to 4 layers of first luminescent particles 231 . Therefore, in the first light-emitting pattern 230, the number of the first light-emitting particles 231 accounts for 66/100 to 80/100 of the total number of particles.
  • the light-emitting substrate 1 further includes an auxiliary functional layer 30 .
  • the auxiliary functional layer 30 is a layer of the carrier auxiliary layer except the first functional layer 220 .
  • the auxiliary functional layer 30 is located between the first electrode 210 and the first functional layer 220 .
  • the auxiliary functional layer 30 is a hole injection layer.
  • the hole injection layer is located between the first electrode 210 and the hole transport layer.
  • the light-emitting substrate 1 may also include one or more layers in the carrier auxiliary layer except the first functional layer 220 and the auxiliary functional layer 30 .
  • the light-emitting substrate 1 further includes at least one of an electron injection layer and an electron transport layer. At least one of an electron injection layer and an electron transport layer is located between the first light emitting pattern 230 and the second electrode 240 .
  • the light-emitting substrate 1 further includes at least one (eg, one or more) second light-emitting devices 40 .
  • the color of the light emitted by the second light-emitting device 40 is different from the color of the light emitted by the first light-emitting device 20 .
  • the first light-emitting device 20 is a red light-emitting device
  • the second light-emitting device 40 is a green light-emitting device or a blue light-emitting device.
  • the second light-emitting device 40 includes: a third electrode 410 , a second functional layer 420 , a second light-emitting pattern 430 and a fourth electrode 440 which are sequentially arranged in a direction away from the substrate 10 .
  • the second functional layer 420 and the second light-emitting pattern 430 touch.
  • the area where the second light-emitting device 40 is located on the light-emitting substrate 1 may be called the second area 40A.
  • the light-emitting principle of the second light-emitting device 40 can be referred to the light-emitting principle of the first light-emitting device 20, which will not be described again.
  • the second light-emitting device 40 and the first light-emitting device 20 are located on the same light-emitting substrate 1. Therefore, the third electrode 410 and the first electrode 210 may be of the same layer and of the same material.
  • the fourth electrode 440 and the second electrode 240 may be in the same layer and made of the same material. That is, the first electrode 210 and the third electrode 410 are located on the first electrode pattern layer 80A.
  • the second electrode 240 and the fourth electrode 440 are located on the second electrode pattern layer 80B.
  • “same layer” refers to using the same film-forming process (such as a coating process) to form a film layer for forming a specific pattern, and then using the same mask to pass through it once The layer structure formed by the patterning process.
  • the same patterning process may include multiple exposure, development or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights. Or have different thicknesses.
  • the second luminescent pattern 430 is mainly composed of a second luminescent material.
  • the second luminescent material includes second luminescent particles 431 and a fourth ligand combined with the second luminescent particles 431 .
  • the second luminescent particles 431 may be selected with reference to the first luminescent particles 231 .
  • the shape and material of the second luminescent particles 431 may be the same as the shape and material of the first luminescent particles 231 .
  • the second luminescent particles 431 and the first luminescent particles 231 are both spherical CdSe nanoparticles.
  • the particle diameter of the second luminescent particles 431 is different from the particle diameter of the first luminescent particles 231 , so that the second luminescent particles 431 and the first luminescent particles 231 emit light of different colors.
  • the shape and material of the second luminescent particles 431 and the shape and material of the first luminescent particles 231 may also be different in at least one of them (such as different materials, or different shapes and materials).
  • the first luminescent particles 231 are spherical CdSe nanoparticles
  • the second luminescent particles 431 are spherical PbS/ZnS nanoparticles. In this case, the second luminescent particles 431 and the first luminescent particles 231 emit different colors. Light.
  • the fourth ligand can be selected with reference to the second ligand in the first light-emitting device 20, which will not be described again.
  • the fourth ligand and the second ligand may be the same or different.
  • the second functional layer 420 is mainly composed of a second functional material.
  • the second functional material includes second functional particles 421 and a fifth ligand combined with the second functional particles 421 .
  • the second functional particles 421 can be selected with reference to the first functional particles 221 in the first functional material, which will not be described again.
  • the second functional particles 421 and the first functional particles 221 may be the same or different.
  • the fifth ligand can be selected with reference to the second ligand in the first functional material, which will not be described again.
  • the fifth ligand and the second ligand may be the same or different.
  • the development properties of the fourth ligand and the fifth ligand are the same. Likewise, in this case the fourth and fifth ligands may be the same or different.
  • the preparation method of the second functional layer 420 and the second light-emitting pattern 430 can refer to the preparation method of the first functional layer 220 and the first light-emitting pattern 230, such as using a single-layer preparation process (such as a positive photolithography method or a negative photolithography method). photolithography method) or layered preparation process (such as positive photolithography method or negative photolithography method). Specifically, for the negative photolithography method in the single-layer preparation process, reference can be made to FIG. 11 , which will not be described again here.
  • the second functional layer 420 further includes a sixth ligand.
  • the sixth ligand is combined with the second functional particle 421, and the chain length of the sixth ligand is smaller than the chain length of the fifth ligand.
  • the function and structure of the sixth ligand can be selected with reference to the third ligand in the first luminescent material, which will not be described again.
  • the sixth ligand and the third ligand may be the same or different.
  • the ratio of the number of the fifth ligand to the sum of the number of the fifth ligand and the number of the sixth ligand can also be determined according to each ligand in the first functional particle 221.
  • the proportion of each ligand in the first functional particle 221 is set, and may be the same as or different from the proportion of each ligand in the first functional particle 221 .
  • the number of the second light-emitting particles 431 accounts for the ratio of the sum of the number of the second light-emitting particles 431 and the number of the second functional particles 421. It can also be based on the proportion of each particle in the first light-emitting pattern 230. is set, and may be the same as or different from the proportion of each particle in the first light emitting pattern 230 .
  • the light-emitting substrate 1 is also less prone to the problem of residual second light-emitting material, and the probability of color mixing problems in the light-emitting substrate 1 is reduced.
  • the light-emitting substrate 1 further includes at least one (eg, one or more) third light-emitting devices 50 .
  • the color of the light emitted by the third light-emitting device 50 is different from the color of the light emitted by the first light-emitting device 20 and the color of the light emitted by the second light-emitting device 40 .
  • the first light-emitting device 20 is a red light-emitting device
  • the second light-emitting device 40 is a green light-emitting device
  • the third light-emitting device 50 is a blue light-emitting device.
  • the area where the third light-emitting device 50 is located on the light-emitting substrate 1 may be referred to as the third area 50A.
  • the third light-emitting device 50 includes: a fifth electrode 510 , a third functional layer 520 , a third light-emitting pattern 530 and a sixth electrode 540 which are sequentially arranged in a direction away from the substrate 10 .
  • the third functional layer 520 and the third light-emitting pattern 530 touch.
  • the light-emitting principle of the third light-emitting device 50 can be referred to the light-emitting principle of the first light-emitting device 20 and will not be described again.
  • the third light-emitting device 50, the second light-emitting device 40, and the first light-emitting device 20 are located on the same light-emitting substrate 1. Therefore, the fifth electrode 510 can be in the same layer and the same material as at least one of the third electrode 410 and the first electrode 210 ( For example, the fifth electrode 510, the third electrode 410 and the first electrode 210 are all in the same layer and made of the same material, and are all located in the first electrode pattern layer 80A).
  • the sixth electrode 540 may be in the same layer and the same material as at least one of the fourth electrode 440 and the second electrode 240 (for example, the sixth electrode 540, the fourth electrode 440 and the second electrode 240 are all in the same layer and the same material, and are all located on the Two electrode pattern layer 80B).
  • the third luminescent pattern 530 is mainly composed of a third luminescent material, and the third luminescent material includes third luminescent particles 531 and a seventh ligand combined with the third luminescent particles 531 .
  • the third luminescent particles 531 may be selected with reference to the first luminescent particles 231 .
  • the third luminescent particles 531 , the second luminescent particles 431 and the first luminescent particles 231 may all have the same shape and material.
  • the third luminescent particles 531, the second luminescent particles 431, and the first luminescent particles 231 are all spherical ZnSe nanoparticles.
  • the particle diameters of the third luminescent particles 531 , the second luminescent particles 431 and the first luminescent particles 231 are respectively different, so that the third luminescent particles 531 , the second luminescent particles 431 and the first luminescent particles 231 emit different colors. of light.
  • the shape and material of the third luminescent particle 531 and the shape and material of the first luminescent particle 231 may also be different in at least one of them (such as different materials or different shapes and materials).
  • the shape and material of the third luminescent particle 531 and the shape and material of the second luminescent particle 431 may also be different in at least one of them (such as different materials or different shapes and materials).
  • the first luminescent particles 231 are spherical CdSe nanoparticles
  • the second luminescent particles 431 are spherical CsPbCl 3 nanoparticles
  • the third luminescent particles 531 are spherical PbS/ZnS nanoparticles.
  • the third luminescent particle 231 is a spherical CdSe nanoparticle.
  • the three luminescent particles 531, the second luminescent particle 431 and the first luminescent particle 231 emit light of different colors.
  • the seventh ligand can be selected with reference to the first ligand in the first light-emitting device 20, which will not be described again. At least two of the seventh ligand, the fourth ligand and the first ligand may be the same (for example, all three are identical), or they may be completely different.
  • the third functional layer 520 is mainly composed of a third functional material, and the third functional material includes third functional particles 521 and an eighth ligand combined with the third functional particles 521 .
  • the seventh ligand and the eighth ligand have the same developing properties.
  • the third functional particles 521 can be selected with reference to the first functional particles 221 in the first functional material, which will not be described again. At least two of the third functional particles 521 , the second functional particles 421 and the first functional particles 221 may be the same (for example, all three are identical), or they may be completely different.
  • the eighth ligand can be selected with reference to the second ligand in the first functional material, which will not be described again. At least two of the eighth ligand, the fifth ligand and the second ligand may be the same (for example, all three are identical), or they may be completely different.
  • the preparation method of the third functional layer 520 and the third light-emitting pattern 530 can refer to the preparation method of the first functional layer 220 and the first light-emitting pattern 230, such as using a single-layer preparation process (such as a positive photolithography method or a negative photolithography method). photolithography method) or layered preparation process (such as positive photolithography method or negative photolithography method). Specifically, for the negative photolithography method in the single-layer preparation process, reference can be made to FIG. 13 , which will not be described again here.
  • the third functional layer 520 further includes a ninth ligand, the ninth ligand is combined with the third functional particle 521, and the chain length of the ninth ligand is smaller than the chain length of the eighth ligand.
  • the function and structure of the ninth ligand can be selected with reference to the third ligand in the first luminescent material, which will not be described again. At least two of the ninth ligand, the sixth ligand and the third ligand may be the same (for example, all three are identical), or they may be completely different.
  • the number of the eighth ligand accounts for the ratio of the sum of the number of the eighth ligand and the number of the ninth ligand, also according to each ligand in the first functional particle 221 Set the proportion. Furthermore, at least two of the ratio of each ligand in the first functional particles 221, the ratio of each ligand in the second functional particle 421, and the ratio of each ligand in the third functional particle 521 may be the same ( For example, the three are exactly the same), or they can be completely different.
  • the proportion of the number of the third light-emitting particles 531 to the sum of the number of the third light-emitting particles 531 and the number of the third functional particles 521 is also determined based on the proportion of each particle in the first light-emitting pattern 230. set up. Furthermore, at least two of the three proportions of the particles in the first light-emitting pattern 230 , the proportion of each particle in the second light-emitting pattern 430 and the proportion of each particle in the third light-emitting pattern 530 may be the same (for example, the three identical) or completely different.
  • the light-emitting substrate 1 is also less prone to the problem of residual third light-emitting material, and the probability of color mixing problems in the light-emitting substrate 1 is reduced.
  • two of the first light emitting device 20 , the second light emitting device 40 and the third light emitting device 50 include layers of materials.
  • the first light emitting device 20 includes a first material layer 250.
  • the second light emitting device 40 includes a second material layer 450 .
  • the material of the first material layer 250 is the same as the material of the second functional layer 420 .
  • the light-emitting substrate 1 is prepared in the order of the first light-emitting device 20 , the second light-emitting device 40 and the third light-emitting device 50 .
  • the thin film structure formed will cover the light-emitting pattern of the light-emitting device prepared previously. Therefore, the thin film structure in the step of preparing the second light-emitting device 40 will cover the first light-emitting pattern 230 of the first light-emitting device 20 .
  • the second light-emitting pattern 230 After the film structure is developed and exposed, in addition to the second functional particles 421 corresponding to the area of the second light-emitting device 40 (second area 40A), which will remain on the auxiliary functional layer 30 or the third electrode 410, the second light-emitting pattern 230 has A layer of functional particles 421 will also remain, and this layer of second functional particles 421 may be called the first material layer 250 . Therefore, the material of the first material layer 250 is the same as the second functional material of the second functional layer 420 in the second light emitting device 40 .
  • the first material layer 250 is located on the surface of the first light-emitting pattern 230 away from the substrate 10 , that is, the first material layer 250 is located between the first light-emitting pattern 230 and the second electrode 240 , and is in contact with the first light-emitting pattern 230 .
  • a second material layer 450 is also formed in the second light-emitting device 40 .
  • the material of the second material layer 450 is the same as the material of the third functional layer 520 .
  • the second material layer 450 is located on the surface of the second light-emitting pattern 430 away from the substrate 10; that is, the second material layer 450 is located between the second light-emitting pattern 430 and the fourth electrode 440, and is in contact with the second light-emitting pattern 430.
  • the third light-emitting device 50 is the last light-emitting device prepared, and no thin film will be formed above the third light-emitting pattern 530 due to the preparation of light-emitting patterns of other light-emitting devices. Therefore, the third light-emitting device 50 does not include a corresponding material layer.
  • the light-emitting substrate 1 includes the first light-emitting device 20 , the second light-emitting device 40 and the third light-emitting device 50 simultaneously.
  • the particle diameters of the first luminescent particles 231 and the second luminescent particles 431 are both larger than the particle diameter of the third luminescent particles 531 .
  • the first luminescent particles 231, the second luminescent particles 431 and the third luminescent particles 531 are all quantum dot luminescent materials.
  • the third light-emitting device 50 is a blue light-emitting device
  • one of the first light-emitting device 20 and the second light-emitting device 40 is a red light-emitting device
  • the other is a green light-emitting device.
  • the first light-emitting device 20 is a red light-emitting device
  • the second light-emitting device 40 is a green light-emitting device.
  • the red light-emitting device and the green light-emitting device are multi-electron devices
  • the blue light-emitting device is a multi-hole device.
  • the first functional layer 220 is a P-type semiconductor
  • the second functional layer 420 is a P-type semiconductor
  • the third functional layer 250 is an N-type semiconductor.
  • the solution containing the luminescent material is a raw material for preparing the thin film structure of the first luminescent device 20 .
  • the solution containing the luminescent material includes a first solvent and a first initial luminescent material and a first initial functional material dissolved in the first solvent.
  • the first initial luminescent material includes first luminescent particles 231 and a first photosensitive ligand combined with the first luminescent particles 231 .
  • the first initial functional material includes first functional particles 221 and a second photosensitive ligand combined with the first functional particles 221 . Wherein, the first photosensitive ligand and the second photosensitive ligand have the same photosensitive properties.
  • Factors affecting the migration rate of the first initial functional material and the first initial luminescent material in the first solvent at least include: the solubility of the material in the first solvent (materials with low solubility have fast migration speed), the number of particles contained in the material, diameter (can also be called particle size, materials with small particle size have fast migration speed) and the properties of the particles contained in the material (the adsorption performance of the particles themselves and the material of the auxiliary functional layer 30 or the first electrode 210, the adsorption of the particles Materials with good properties and fast migration speed). It can be adjusted from at least one aspect of the above influencing factors, so that the migration rate of the first initial functional material in the first solvent is greater than the migration rate of the first initial luminescent material in the first solvent.
  • the solution containing the light-emitting material (hereinafter replaced by the first mixed solution) will react due to the first
  • the migration rate of the initial functional material in the first solvent is greater than the migration rate of the first initial luminescent material in the first solvent.
  • the first initial functional material is adsorbed on the auxiliary functional layer 30 or the first electrode 210 before the first initial luminescent material.
  • the first solvent volatilizes for example, the first mixed solution is coated by spin coating, the first solvent will volatilize due to heating in the spin coating step
  • the An initial functional layer is located below the first initial light-emitting pattern.
  • the first initial functional material or the exposed first initial functional material may not be completely eluted, leaving a small amount of first functional particles 221 remaining. Since this interaction force is relatively weak and the development characteristics of the first ligand and the second ligand are the same, the first initial luminescent material or the first initial luminescent material after exposure is washed away by the developer with very little remain on the first functional particles 221 .
  • the light-emitting substrate 1 is provided with light-emitting devices of other colors (such as the second light-emitting device 40) in areas other than the first light device, the second light-emitting device 40 is provided on a small amount of remaining first functional particles 221.
  • the first functional particles 221 does not emit light, so there is no problem of color mixing, and only the light of the corresponding color generated by the excitation of the second light-emitting particles 431 in the second light-emitting device 40 is displayed. Therefore, the light-emitting substrate 1 is less likely to have the problem of the first light-emitting material remaining, and the probability of the light-emitting substrate 1 having color mixing problems is reduced.
  • the above-mentioned first mixed solution only needs to be coated once to prepare a thin film structure including both the first initial functional layer and the first initial light-emitting pattern. Therefore, the process of forming the thin film structure is shortened and the production efficiency is improved.
  • the migration rate of the first initial functional material in the first solvent can be achieved by adjusting from the aspect of solubility to be greater than the migration rate of the first initial luminescent material in the first solvent. In some embodiments, the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent.
  • Factors affecting the solubility of the first initial functional material and the first initial luminescent material in the first solvent include at least the chain length of the ligand, the number of branches of the ligand, and the degree of matching between the functional group of the ligand and the functional group in the first solvent. It can be adjusted from at least one aspect of the above influencing factors so that the solubility of the first initial functional material in the first solvent is smaller than the solubility of the first initial luminescent material in the first solvent. In this way, the first initial functional material is more likely to precipitate in the first solvent, settle downward, and combine with the auxiliary functional layer 30 or the first electrode 210, so that the first initial functional material is located below the first initial luminescent material. Therefore, the light-emitting substrate 1 is less likely to have the problem of the first light-emitting material remaining, further reducing the probability of the light-emitting substrate 1 having color mixing problems.
  • the solution containing the luminescent material further includes a third ligand, and the third ligand is combined with the first functional particle 221 .
  • the first functional particle 221 combines the second ligand and the third ligand.
  • the solubility of the first functional material in the first solvent mainly depends on the second ligand and the third ligand.
  • the solubility of the third ligand in the first solvent is less than the solubility of the first photosensitive ligand in the first solvent. Therefore, the solubility of the first functional material in the first solvent is reduced and is less than the solubility of the first luminescent material in the first solvent.
  • the solubility of the first functional material in the first solvent can be reduced by selecting a ligand of appropriate chain length.
  • the third ligand has a chain length that is less than the chain length of the first photoactive ligand.
  • the shorter the ligand's chain length the less soluble it is in oily solvents. Therefore, the solubility of the third ligand in the first solvent is less than the solubility of the first ligand in the first solvent, so that the solubility of the first functional material in the first solvent is less than the solubility of the first luminescent material in the first solvent.
  • the solubility of the first functional material in the first solvent can also be reduced by selecting ligands with appropriate functional groups.
  • the first photosensitive ligand and the first solvent include at least one identical functional group, and the first photosensitive ligand with more identical functional groups is more miscible with the first solvent.
  • the third ligand and the first solvent do not include the same functional group, or the number of the same functional groups between the third ligand and the first solvent is less than the number of the same functional groups between the first photosensitive ligand and the first solvent. .
  • the solubility of the first functional material in the first solvent is smaller than the solubility of the first luminescent material in the first solvent.
  • the solubility of the first functional material in the first solvent can also be reduced by selecting a ligand with an appropriate number of branches.
  • the longest chain of a ligand is the main chain, and the other chains connected to the main chain are branch chains.
  • the chain length of the ligand actually refers to the length of the main chain.
  • the chain length of the first photosensitive ligand and the chain length of the third ligand are the same or similar, and the number of branches of the first photosensitive ligand is greater than the number of branches of the third ligand.
  • ligands with a large number of branched chains have greater solubility in organic solvents. As a result, the solubility of the first functional material in the first solvent is smaller than the solubility of the first luminescent material in the first solvent.
  • the third ligand has a chain length that is less than the chain length of the first photoactive ligand.
  • the shorter the ligand's chain length the less soluble it is in oily solvents. Therefore, the solubility of the third ligand in the first solvent is less than the solubility of the first ligand in the first solvent, so that the solubility of the first functional material in the first solvent is less than the solubility of the first luminescent material in the first solvent.
  • the particle size of the first functional particles 221 is smaller than the particle size of the first luminescent particles 231 .
  • the technical effect can be referred to the technical effect of the corresponding part of the light-emitting substrate 1, and will not be described again here.
  • the particle size of the first functional particles 221 is 2 nm to 7 nm.
  • the technical effect can be referred to the technical effect of the corresponding part of the light-emitting substrate 1, and will not be described again here.
  • the ratio of the second photosensitive ligand to the sum of the second photosensitive ligand and the third ligand is 1/2 ⁇ 2/3.
  • the technical effect can be referred to the technical effect of the corresponding part of the light-emitting substrate 1, and will not be described again here.
  • the first luminescent particles 231 are CdS, CdSe, InP, ZnSe, PbS, CsPbCl 3 , CsPbBr 3 , CsPhI 3 , CdS/ZnS, CdSe/ZnS, PbS/ZnS, InP/ZnS, CsPbCl 3 / ZnS, CsPbBr 3 /ZnS or CsPhI 3 /ZnS.
  • the technical effect please refer to the technical effect of the corresponding part of the light-emitting substrate 1, which will not be described again here.
  • the first functional particle 221 is an N-type semiconductor, a P-type semiconductor or an insulator.
  • the technical effect can be referred to the technical effect of the corresponding part of the light-emitting substrate 1, and will not be described again here.
  • the ratio of the number of the first luminescent particles 231 to the number of the first functional particles 221 is 66/100 ⁇ 80/100.
  • the technical effect can be referred to the technical effect of the corresponding part of the light-emitting substrate 1, and will not be described again here.
  • Some embodiments of the present application also provide a method for preparing a light-emitting substrate 1, including the following steps:
  • the material of the first electrode 210 can be selected according to the type of the light-emitting substrate 1 .
  • a first conductive layer may be formed on the substrate 10 , and then the first conductive layer may be exposed, developed or etched to obtain the first electrode 210 .
  • the first luminescent pattern 230 is mainly composed of a first luminescent material, and the first luminescent material includes first luminescent particles 231 and a first ligand combined with the first luminescent particles 231 .
  • the first functional layer 220 is mainly composed of a first functional material, and the first functional material includes first functional particles 221 and second ligands combined with the first functional particles 221 .
  • the development properties of the first ligand and the second ligand are the same.
  • S13 Form the second electrode 240 on the side of the first light emitting pattern 230 away from the substrate 10 .
  • the first electrode 210, the first functional layer 220, the first light emitting pattern 230 and the second electrode 240 constitute the first light emitting device 20.
  • the preparation method of the above-mentioned light-emitting substrate 1 can also achieve the same beneficial effects as the above-mentioned light-emitting substrate 1, and will not be described again here.
  • forming the first functional layer 220 and the first light emitting pattern 230 on the side of the first electrode 210 away from the substrate 10 includes:
  • the first mixed solution is coated on the side of the first electrode 210 away from the substrate 10 to obtain the first mixed film 60 .
  • the first mixed solution includes a first solvent and a first initial luminescent material and a first initial functional material dissolved in the first solvent.
  • the first initial luminescent material includes first luminescent particles 231 and combined with the first luminescent particles 231 The first photosensitive ligand.
  • the first initial functional material includes first functional particles 221 and a second photosensitive ligand combined with the first functional particles 221 .
  • the first photosensitive ligand and the second photosensitive ligand have the same photosensitive properties.
  • the migration rate of the first initial functional material in the first solvent is greater than the migration rate of the first initial luminescent material in the first solvent.
  • Mask exposure and development are performed on the first mixed film 60 to obtain the first functional layer 220 and the first light-emitting pattern 230.
  • the first mixed film 60 in this case, only one coating and film forming process is performed to obtain the first mixed film 60 .
  • the specific steps and technical effects of coating film formation, exposure and development can be found in the corresponding description of the light-emitting substrate 1, and will not be described again here.
  • the first luminescent particles 231, the first photosensitive ligand, the first functional particles 221, the second photosensitive ligand and the first solvent please refer to the corresponding description of the light-emitting substrate 1, and will not be described again here.
  • the solubility of the first initial functional material in the first solvent is less than the solubility of the first initial luminescent material in the first solvent.
  • mask exposure and development are performed on the first mixed film 60 to obtain the first functional layer 220 and the first luminescent pattern 230 including:
  • the first mixed film 60 is exposed through a mask, and the first photosensitive ligand and the second photosensitive ligand located in the first region 20A of the first mixed film 60 generate the first photochangeable ligand and the second photosensitive ligand respectively under light radiation. Optically variable ligands.
  • the first area 20A is the area where the first light emitting device 20 is located.
  • the first developer is used to dissolve and remove the portion of the exposed first mixed film 60 located outside the first area 20A to obtain the first functional layer 220 and the first luminescent pattern 230 .
  • the solubility of the first photosensitive ligand in the first developing solution is greater than the solubility of the first photosensitive ligand in the first developing solution.
  • the solubility of the second photosensitive ligand in the first developer is greater than the solubility of the second photochangeable ligand in the first developer.
  • the opening of the mask corresponds to the first light emitting pattern 230 .
  • the exposure area of the first mixed film 60 is the first area 20A, that is, the area where the first light-emitting device 20 is located.
  • the first ligand is a first light-changing ligand
  • the second ligand is a second light-changing ligand.
  • mask exposure and development are performed on the first mixed film 60 to obtain the first functional layer 220 and the first luminescent pattern 230 including:
  • the first mixed film 60 is exposed through a mask, and the first photosensitive ligand and the second photosensitive ligand located outside the first region 20A of the first mixed film 60 respectively generate the first photochangeable ligand and the third photosensitive ligand under light radiation.
  • the first area 20A is the area where the first light emitting device 20 is located.
  • the second developer is used to dissolve and remove the exposed portion of the first mixed film 60 outside the first area 20A to obtain the first functional layer 220 and the first luminescent pattern 230 .
  • the solubility of the first photosensitive ligand in the second developing solution is less than the solubility of the first photosensitive ligand in the second developing solution.
  • the solubility of the second photosensitive ligand in the second developing solution is less than the solubility of the second photochanging ligand in the second developing solution.
  • the opening of the mask does not correspond to the first light emitting pattern 230 .
  • the exposed area of the first mixed film 60 is an area outside the first area 20A, that is, an area outside the first light-emitting device 20 .
  • the first ligand is a first photosensitive ligand
  • the second ligand is a second photosensitive ligand.
  • forming the first functional layer 220 and the first light emitting pattern 230 on the side of the first electrode 210 away from the substrate 10 includes:
  • a first functional film 71 is formed on the side of the first electrode 210 away from the substrate 10.
  • the material of the first functional film 71 includes a first functional material.
  • the first functional material includes first functional particles 221 and is combined with the first functional particles 221. of the second photosensitive ligand.
  • a first luminescent film 72 is formed on the side of the first functional film 71 away from the substrate 10.
  • the material of the first luminescent film 72 includes a first luminescent material.
  • the first luminescent material includes first luminescent particles 231 and the first luminescent particles.
  • the first photosensitive ligand bound to 231, the first photosensitive ligand and the second photosensitive ligand have the same photosensitive properties.
  • Mask exposure and development are performed on the first functional film 71 and the first luminescent film 72 to obtain the first functional layer 220 and the first luminescent pattern 230 .
  • the film formation process was performed twice.
  • the first functional film 71 is coated (such as spin coating) with the first functional solution to obtain the first luminescent film 72 .
  • the specific steps and technical effects of coating film formation, exposure and development can be found in the corresponding description of the light-emitting substrate 1, and will not be described again here.
  • mask exposure and development are performed on the first functional film 71 and the first luminescent film 72 to obtain the first functional layer 220 and the first luminescent pattern 230 including:
  • the first photosensitive ligand and the second photosensitive ligand of the first functional film 71 and the first luminescent film 72 are located in the first area 20A. Under light irradiation, the first light-changing ligand and the second light-changing ligand are respectively generated.
  • the first area 20A is the area where the first light emitting device 20 is located.
  • the third developer is used to dissolve and remove the exposed first functional film 71 and the portion of the first luminescent film 72 located outside the first area 20A to obtain the first functional layer 220 and the first luminescent pattern 230 .
  • the solubility of the first photosensitive ligand in the third developing solution is greater than the solubility of the first photosensitive ligand in the third developing solution.
  • the solubility of the second photosensitive ligand in the third developing solution is greater than the solubility of the second photosensitive ligand in the third developing solution.
  • the opening of the mask corresponds to the first light emitting pattern 230 .
  • the exposure area of the first functional film 71 and the first light-emitting film 72 is the first area 20A, that is, the area where the first light-emitting device 20 is located.
  • the first ligand is a first light-changing ligand
  • the second ligand is a second light-changing ligand.
  • the third developer and the first developer are of the same type, and both are developers used to rinse away the material in the non-exposed area. They can be the same or different.
  • mask exposure and development are performed on the first functional film 71 and the first luminescent film 72 to obtain the first functional layer 220 and the first luminescent pattern 230 including:
  • Mask exposure is performed on the first functional film 71 and the first luminescent film 72.
  • Both the first functional film 71 and the first luminescent film 72 are located outside the first region 20A of the first photosensitive ligand and the second photosensitive ligand.
  • the first light-changing ligand and the second light-changing ligand are respectively generated under light irradiation.
  • the first area 20A is the area where the first light emitting device 20 is located.
  • the fourth developer is used to dissolve and remove the exposed first functional film 71 and the portion of the first luminescent film 72 located outside the first area 20A to obtain the first functional layer 220 and the first luminescent pattern 230 .
  • the solubility of the first photosensitive ligand in the fourth developing solution is less than the solubility of the first photosensitive ligand in the fourth developing solution.
  • the solubility of the second photosensitive ligand in the fourth developing solution is less than the solubility of the second photosensitive ligand in the fourth developing solution.
  • the opening of the mask does not correspond to the first light emitting pattern 230 .
  • the exposed area of the first functional film 71 and the first light-emitting film 72 is an area outside the first area 20A, that is, an area outside the first light-emitting device 20 .
  • the first ligand is a first photosensitive ligand
  • the second ligand is a second photosensitive ligand.
  • a third electrode 410 is formed on the substrate 10 .
  • a second functional layer 420 and a second luminescent pattern 430 are formed, wherein the material of the second luminescent pattern 430 includes a second luminescent material, and the second luminescent material includes second luminescent particles 431 and a fourth ligand bound to the second luminescent particle 431.
  • the material of the second functional layer 420 is a second functional material.
  • the second functional material includes second functional particles 421 and a fifth ligand combined with the second functional particles 421 .
  • the development properties of the fourth ligand and the fifth ligand are the same.
  • a fourth electrode 440 is formed on the side of the second light emitting pattern 430 away from the substrate 10 .
  • the third electrode 410, the second functional layer 420, the second light emitting pattern 430 and the fourth electrode 440 constitute the second light emitting device 40.
  • the preparation method of the second light-emitting device 40 can refer to the preparation method of the first light-emitting device 20 , for example, a single-layer preparation process or a layered preparation process is used in the film forming step, and a positive photolithography method or a negative photolithography method is used in the exposure and development steps. Photolithography method.
  • the second luminescent particles 431, the fourth ligand, the second functional particles 421 and the fifth ligand please refer to the corresponding description of the luminescent substrate 1, and will not be described again here.
  • a fifth electrode 510 is formed on the substrate 10 .
  • a third functional layer 520 and a third luminescent pattern 530 are formed, wherein the material of the third luminescent pattern 530 is a third luminescent material, and the third luminescent material includes third luminescent particles 531 and A seventh ligand bound to the third luminescent particle 531.
  • the material of the third functional layer 520 is a third functional material.
  • the third functional material includes third functional particles 521 and an eighth ligand combined with the third functional particles 521 .
  • the seventh ligand and the eighth ligand have the same developing properties.
  • a sixth electrode 540 is formed on the side of the third light emitting pattern 530 away from the substrate 10 .
  • the fifth electrode 510, the third functional layer 520, the third light emitting pattern 530 and the sixth electrode 540 constitute the third light emitting device 50.
  • the preparation method of the third light-emitting device 50 can refer to the preparation method of the first light-emitting device 20 , for example, a single-layer preparation process or a layered preparation process is used in the film forming step, and a positive photolithography method or a negative photolithography method is used in the exposure and development steps. Photolithography method.
  • a single-layer preparation process or a layered preparation process is used in the film forming step
  • a positive photolithography method or a negative photolithography method is used in the exposure and development steps.
  • Photolithography method for the third luminescent particle 531, the seventh ligand, the third functional particle 521 and the eighth ligand, please refer to the corresponding description of the light-emitting substrate 1 and will not be described again here.
  • Some embodiments of the present application also provide a light-emitting device, including the above-mentioned light-emitting substrate 1.
  • the above-mentioned light-emitting device can also achieve the same beneficial effects as the above-mentioned light-emitting substrate 1, which will not be described again here.
  • the light-emitting device has an inverted bottom-emitting structure, and the preparation steps are as follows:
  • a patterned ITO substrate that is, the common anode of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is prepared in advance.
  • the ZnO layer that is, the common auxiliary functional layer 30 of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is spin-coated.
  • the first mixed solution is spin-coated to obtain a first mixed film 60 .
  • the first mixed solution includes first luminescent particles 231 and first functional particles 221 .
  • the first luminescent particles 231 (red-emitting quantum dots) are combined with a first ligand (the first ligand is a photosensitive ligand).
  • the first functional particle 221 is combined with a second ligand (the second ligand is a photosensitive ligand) and a third ligand (the third ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a first mask perform alignment exposure, develop, and elute the first luminescent particles 231 in the sub-pixel area of the second light-emitting device 40 and the sub-pixel area of the third light-emitting device 50 to form the first luminescent pattern 230 (corresponding to red light sub-pixel).
  • the second mixed solution is spin-coated to obtain a second mixed film 80 .
  • the second mixed solution includes second luminescent particles 431 and second functional particles 421 .
  • the second luminescent particles 431 green light-emitting quantum dots
  • the fourth ligand is a photosensitive ligand
  • the second functional particle 421 is combined with a fifth ligand (the fifth ligand is a photosensitive ligand) and a sixth ligand (the sixth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a second mask perform alignment exposure, develop, and elute the second luminescent particles 431 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the third light-emitting device 50 to form a second luminescent pattern 430 (corresponding to green light sub-pixel).
  • the third mixed solution is spin-coated to obtain a third mixed film 90 .
  • the third mixed solution includes third luminescent particles 531 and third functional particles 521 .
  • the third luminescent particle 531 blue light-emitting quantum dot
  • the third functional particle 521 is combined with an eighth ligand (the eighth ligand is a photosensitive ligand) and a ninth ligand (the ninth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a third mask perform alignment exposure, develop, and elute the third luminescent particles 531 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the second light-emitting device 40 to form a third luminescent pattern 530 (corresponding to Blu-ray sub-pixel).
  • the hole transport layer, hole injection layer and Ag electrode are evaporated, and the device is packaged.
  • the light-emitting device has a positive bottom-emitting structure, and the preparation steps are as follows:
  • a patterned ITO substrate that is, the common anode of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is prepared in advance.
  • the hole injection layer is evaporated.
  • the hole transport layer NiOx that is, the common auxiliary functional layer 30 of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is spin-coated.
  • the first mixed solution is spin-coated to obtain a first mixed film 60 .
  • the first mixed solution includes first luminescent particles 231 and first functional particles 221 .
  • the first luminescent particles 231 (red-emitting quantum dots) are combined with a first ligand (the first ligand is a photosensitive ligand).
  • the first functional particle 221 is combined with a second ligand (the second ligand is a photosensitive ligand) and a third ligand (the third ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a first mask perform alignment exposure, develop, and elute the first luminescent particles 231 in the sub-pixel area of the second light-emitting device 40 and the sub-pixel area of the third light-emitting device 50 to form the first luminescent pattern 230 (corresponding to red light sub-pixel).
  • the second mixed solution is spin-coated to obtain a second mixed film 80 .
  • the second mixed solution includes second luminescent particles 431 and second functional particles 421 .
  • the second luminescent particles 431 green light-emitting quantum dots
  • the fourth ligand is a photosensitive ligand
  • the second functional particle 421 is combined with a fifth ligand (the fifth ligand is a photosensitive ligand) and a sixth ligand (the sixth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a second mask perform alignment exposure, develop, and elute the second luminescent particles 431 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the third light-emitting device 50 to form a second luminescent pattern 430 (corresponding to green light sub-pixel).
  • the third mixed solution is spin-coated to obtain a third mixed film 90 .
  • the third mixed solution includes third luminescent particles 531 and third functional particles 521 .
  • the third luminescent particle 531 blue light-emitting quantum dot
  • the third functional particle 521 is combined with an eighth ligand (the eighth ligand is a photosensitive ligand) and a ninth ligand (the ninth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a third mask perform alignment exposure, develop, and elute the third luminescent particles 531 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the second light-emitting device 40 to form a third luminescent pattern 530 (corresponding to Blu-ray sub-pixel).
  • the cathode can be Al, Ag metal, etc., about 100-500nm, and finally the device is packaged.
  • the QLED device has an inverted bottom-emitting structure, and the preparation steps are as follows:
  • a patterned ITO substrate that is, the common anode of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is prepared in advance.
  • the ZnO layer that is, the common auxiliary functional layer 30 of the first light-emitting device 20 , the first light-emitting device 20 and the third light-emitting device 50 is spin-coated.
  • the first mixed solution is spin-coated to obtain a first mixed film 60 .
  • the first mixed solution includes first luminescent particles 231 and first functional particles 221 .
  • the first luminescent particles 231 (red-emitting quantum dots) are combined with a first ligand (the first ligand is a photosensitive ligand).
  • the first functional particle 221 is combined with a second ligand (the second ligand is a photosensitive ligand) and a third ligand (the third ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a first mask perform alignment exposure, develop, and elute the first luminescent particles 231 in the sub-pixel area of the second light-emitting device 40 and the sub-pixel area of the third light-emitting device 50 to form the first luminescent pattern 230 (corresponding to red light sub-pixel).
  • the second mixed solution is spin-coated to obtain a second mixed film 80 .
  • the second mixed solution includes second luminescent particles 431 and second functional particles 421 .
  • the second luminescent particles 431 green light-emitting quantum dots
  • the fourth ligand is a photosensitive ligand
  • the second functional particle 421 is combined with a fifth ligand (the fifth ligand is a photosensitive ligand) and a sixth ligand (the sixth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a second mask perform alignment exposure, develop, and elute the second luminescent particles 431 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the third light-emitting device 50 to form a second luminescent pattern 430 (corresponding to green light sub-pixel).
  • the third mixed solution is spin-coated to obtain a third mixed film 90 .
  • the third mixed solution includes third luminescent particles 531 and third functional particles 521 .
  • the third luminescent particle 531 blue light-emitting quantum dot
  • the third functional particle 521 is combined with an eighth ligand (the eighth ligand is a photosensitive ligand) and a ninth ligand (the ninth ligand is a photosensitive ligand or a non-photosensitive ligand).
  • Add a third mask perform alignment exposure, develop, and elute the third luminescent particles 531 in the sub-pixel area of the first light-emitting device 20 and the sub-pixel area of the second light-emitting device 40 to form a third luminescent pattern 530 (corresponding to Blu-ray sub-pixel).
  • the hole transport layer, hole injection layer and Ag electrode are evaporated, and the device is packaged.
  • a first mixed solution is prepared by ligand exchange.
  • the first mixed solution is a mixture of GQD (Green Quantum Dot, green quantum dot)-Boc/NiO-AB.
  • GQD-Boc GQD is the first luminescent particle, and the first luminescent particle is a quantum dot that emits green light
  • Boc is the first ligand.
  • NiO-AB NiO is the first functional particle
  • A represents the second ligand, specifically, the second ligand is Boc
  • B represents the third ligand, specifically, the third ligand is ethyl mercaptan.
  • ZnO thickness is about 25 nm
  • GQD-Boc/NiO-AB thickness is about 30 nm
  • ZnO thickness is about 25 nm
  • GQD-Boc/NiO-AB thickness is about 30 nm
  • the above-mentioned UV-visible absorption spectrum of ZnO refers to the UV-visible absorption spectrum of the film layer obtained after spin-coating ZnO on the first white glass.
  • the UV-visible absorption spectrum of ZnO/GQD-Boc/NiO-AB/CCl 3 is Refers to the UV absorption spectrum of the film layer obtained after sequentially spin-coating ZnO and GQD-Boc/NiO-AB on the first white glass, and using chloroform to dissolve GQD-Boc/NiO-AB.
  • the UV-visible absorption spectrum of ZnO/GQD-Boc/CCl 3 refers to the UV absorption spectrum of the film layer obtained after sequentially spin-coating ZnO and GQD-Boc on the second white glass, and using chloroform to dissolve GQD-Boc.
  • the absorption value of ZnO/GQD-Boc/CCl 3 in the wavelength range of 450nm to 750nm is significantly higher than the absorption value of ZnO in the wavelength range of 450nm to 750nm, which shows that after ZnO/GQD-Boc/NiO-AB development The residual amount of GQDs on the ZnO surface is very small.

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Abstract

一种发光基板，发光基板包括衬底和第一发光器件。第一发光器件第一发光器件包括：沿远离衬底的方向依次设置的第一电极、第一功能层、第一发光图案和第二电极，第一功能层与第一发光图案接触。其中，第一发光图案包括第一发光材料，第一发光材料包括第一发光粒子以及与第一发光粒子结合的第一配体。第一功能层包括第一功能材料，第一功能材料包括第一功能粒子以及与第一功能粒子结合的第二配体；第一配体和第二配体的显影特性相同。在显影时，发光基板在第一光器件以外的区域，残留少量的第一功能粒子。当其他发光器件时设置残留少量的第一功能粒子上，故而不会出现混色的问题，发光基板不容易出现第一发光材料残留的问题。

Description

发光基板及制备方法、含有发光材料的溶液、发光装置 技术领域
本公开涉及显示技术领域，尤其涉及一种发光基板及制备方法、含有发光材料的溶液、发光装置。
背景技术
相对于有机发光材料而言，量子点具有发光色纯度高、发光波长可调等优势，并且，量子点具有优异的光化学稳定性和热稳定性，因此，以量子点为发光材料的量子点发光二极管被广泛应用于显示领域中。
发明内容
一方面，提供一种发光基板，发光基板包括衬底和第一发光器件。第一发光器件包括：沿远离衬底的方向依次设置的第一电极、第一功能层、第一发光图案和第二电极，第一功能层与第一发光图案接触。其中，第一发光图案包括第一发光材料，第一发光材料包括第一发光粒子以及与第一发光粒子结合的第一配体。第一功能层包括第一功能材料，第一功能材料包括第一功能粒子以及与第一功能粒子结合的第二配体；第一配体和第二配体的显影特性相同。
在一些实施例中，第一功能粒子的粒径小于第一发光粒子的粒径。
在一些实施例中，第一功能粒子的粒径为2nm～7nm。
在一些实施例中，第一功能层还包括第三配体，第三配体与第一功能粒子结合，第三配体的链长小于第一配体的链长；或者，第三配体小于第一光敏配体的链长，第一配体为第一光敏配体的光照产物。
在一些实施例中，在第一功能粒子上，第二配体占第二配体和第三配体之和的比例为1/2～2/3。
在一些实施例中，第一功能粒子为N型半导体、P型半导体或绝缘体。
在一些实施例中，所述第一功能层和所述第一发光图案的厚度的比为1/3～1/5。
在一些实施例中，第一发光图案中的第一发光粒子的数量和第一功能层中的第一功能粒子的数量之比为66/100～80/100。
在一些实施例中，第一配体和第二配体均为光敏配体。或者，第一配体和第二配体均为光敏配体的光照产物。
在一些实施例中，发光基板还包括辅助功能层。辅助功能层位于第一电极和第一功能层之间。
在一些实施例中，发光基板还包括第二发光器件。第二发光器件包括沿远离衬底的方向依次设置的第三电极、第二功能层、第二发光图案和第四电极，第二功能层与第二发光图案接触。其中，第二发光图案包括第二发光材料，第二发光材料包括第二发光粒子以及与第二发光粒子结合的第四配体。第二功能层包括第二功能材料，第二功能材料包括第二功能粒子以及与第二功能粒子结合的第五配体；第四配体和第五配体的显影特性相同。
在一些实施例中，第二功能层还包括第六配体。第六配体与第二功能粒子结合，第六配体的链长小于第五配体的链长。
在一些实施例中，第一发光器件还包括第一材料层。第一材料层位于第一发光图案远离衬底一侧的表面。第一材料层的材料与第二功能层的材料相同。
在一些实施例中，发光基板还包括第三发光器件。第三发光器件包括沿远离衬底的方向依次设置的第五电极、第三功能层、第三发光图案和第六电极，第三功能层与第三发光图案接触。其中，第三发光图案包括第三发光材料，第三发光材料包括第三发光粒子以及与第三发光粒子结合的第七配体。第三功能层包括第三功能材料，第三功能材料包括第三功能粒子以及与第三功能粒子结合的第八配体。第七配体和第八配体的显影特性相同。
在一些实施例中，第三功能层还包括第九配体，第九配体与第三功能粒子结合，第九配体的链长小于第八配体的链长。
在一些实施例中，在发光基板包括第二发光器件的情形下，第二发光器件还包括第二材料层，第二材料层位于第二发光图案远离衬底一侧的表面；第二材料层的材料与第三功能层的材料相同。
在一些实施例中，在发光基板包括第二发光器件的情形下，第一发光粒子和第二发光器件中的第二发光粒子的粒径均大于第三发光粒子的粒径，第一功能层和第二发光器件中的第二功能层为P型半导体，第三功能层为N型半导体。
另一方面，提供一种含有发光材料的溶液。含有发光材料的溶液包括第一溶剂以及溶解在第一溶剂中的第一初始发光材料和第一初始功能材料。第一初始发光材料包括第一发光粒子以及与第一发光粒子结合的第一光敏配体。第一初始功能材料包括第一功能粒子以及与第一功能粒子结合的第二光敏配体。其中，第一光敏配体和第二光敏配体的光敏特性相同；第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率。
在一些实施例中，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。
在一些实施例中，第一功能粒子的粒径小于第一发光粒子的粒径。
在一些实施例中，第一功能粒子的粒径为2nm～7nm。
在一些实施例中，含有发光材料的溶液还包括第三配体，第三配体与第一功能粒子结合，第三配体在第一溶剂中的溶解度小于第一光敏配体在第一溶剂中的溶解度。
在一些实施例中，第三配体的链长小于第一光敏配体的链长。
在一些实施例中，在第一功能粒子上，第二光敏配体占第二光敏配体和第三配体之和的比例为1/2～2/3。
在一些实施例中，第一发光粒子为CdS、CdSe、InP、ZnSe、PbS、CsPbCl 3、CsPbBr 3、CsPhI 3、CdS/ZnS、CdSe/ZnS、PbS/ZnS、InP/ZnS、CsPbCl 3/ZnS、CsPbBr 3/ZnS或CsPhI 3/ZnS。
在一些实施例中，第一功能粒子为N型半导体、P型半导体或绝缘体。
在一些实施例中，在含有发光材料的溶液中，第一发光粒子的数量和第一功能粒子的数量之比为66/100～80/100。
又一方面，提供一种发光基板的制备方法。发光基板的制备方法包括以下步骤：
在衬底上形成第一电极。在第一电极远离衬底一侧，形成第一功能层和第一发光图案。其中，第一发光图案包括第一发光材料，第一发光材料包括第一发光粒子以及与第一发光粒子结合的第一配体。第一功能层包括第一功能材料，第一功能材料包括第一功能粒子以及与第一功能粒子结合的第二配体；第一配体和第二配体的显影特性相同。在第一发光图案远离衬底一侧形成第二电极；第一电极、第一功能层、第一发光图案和第二电极构成第一发光器件。
在一些实施例中，在第一电极远离衬底一侧，形成第一功能层和第一发光图案包括：在第一电极远离衬底一侧涂覆第一混合溶液，得到第一混合薄膜；其中，第一混合溶液包括第一溶剂和溶解在第一溶剂中的第一初始发光材料和第一初始功能材料，第一初始发光材料包括第一发光粒子以及与第一发光粒子结合的第一光敏配体；第一初始功能材料包括第一功能粒子以及与第一功能粒子结合的第二光敏配体；其中，第一光敏配体和第二光敏配体的光敏特性相同；第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率。对第一混合薄膜进行掩膜版曝光和显影， 得到第一功能层和第一发光图案。
在一些实施例中，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。
在一些实施例中，对第一混合薄膜进行掩膜版曝光和显影，得到第一功能层和第一发光图案包括：对第一混合薄膜进行掩膜版曝光，第一混合薄膜位于第一区域内的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体；第一区域为第一发光器件所在区域。采用第一显影液溶解并去除曝光后的第一混合薄膜位于第一区域之外的部分，得到第一功能层和第一发光图案。其中，第一光敏配体在第一显影液中的溶解度大于第一光变配体在第一显影液中的溶解度；第二光敏配体在第一显影液中的溶解度大于第二光变配体在第一显影液中的溶解度。
在一些实施例中，对第一混合薄膜进行掩膜版曝光和显影，得到第一功能层和第一发光图案包括：对第一混合薄膜进行掩膜版曝光，第一混合薄膜位于第一区域之外的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体；第一区域为第一发光器件所在区域。采用第二显影液溶解并去除曝光后的第一混合薄膜位于第一区域之外的部分，得到第一功能层和第一发光图案。其中，第一光敏配体在第二显影液中的溶解度小于第一光变配体在第二显影液中的溶解度；第二光敏配体在第二显影液中的溶解度小于第二光变配体在第二显影液中的溶解度。
在一些实施例中，还包括以下步骤：在衬底上形成第三电极。在第三电极远离衬底一侧，形成第二功能层和第二发光图案，其中，第二发光图案的材料包括第二发光材料，第二发光材料包括第二发光粒子以及与第二发光粒子结合的第四配体；第二功能层的材料第二功能材料，第二功能材料包括第二功能粒子以及与第二功能粒子结合的第五配体；第四配体和第五配体的显影特性相同。在第二发光图案远离衬底一侧形成第四电极；第三电极、第二功能层、第二发光图案和第四电极构成第二发光器件。
在一些实施例中，还包括以下步骤：在衬底上形成第五电极。在第五电极远离衬底一侧，形成第三功能层和第三发光图案，其中，第三发光图案的材料第三发光材料，第三发光材料包括第三发光粒子以及与第三发光粒子结合的第七配体；第三功能层的材料第三功能材料，第三功能材料包括第三功能粒子以及与第三功能粒子结合的第八配体；第七配体和第八配体的显影特性相同。在第三发光图案远离衬底一侧形成第六电极；第五电极、第三功能层、第三发光图案和第六电极构成第三发光器件。
又一方面，提供一种发光装置。发光装置包括上述的发光基板。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。
图1为根据一些实施例的一种发光基板的剖视结构图；
图2为根据一些实施例的一种发光基板的剖视结构图；
图3为根据一些实施例的一种发光基板的俯视结构图；
图4为根据一些实施例的一种3T1C的等效电路图；
图5为根据一些实施例的一种发光基板的剖视结构图；
图6为根据一些实施例的第一混合薄膜的工序图；
图7为根据一些实施例的制备第一发光器件的工序图；
图8为根据另一些实施例的制备第一发光器件的工序图；
图9为根据一些实施例的组合薄膜结构的工序图；
图10为根据另一些实施例的一种发光基板的剖视结构图；
图11为根据一些实施例的制备第二发光器件的工序图；
图12为根据另一些实施例的一种发光基板的剖视结构图；
图13为根据一些实施例的制备第三发光器件的工序图；
图14为根据一些实施例的ZnO、ZnO/GQD-Boc/CCl 3以及ZnO/GQD-Boc/NiO-AB/CCl 3的紫外吸收光谱的对比图；
图15为根据一些实施例的ZnO/GQD-Boc/CCl 3以及ZnO/GQD-Boc/NiO-AB/CCl 3在紫外照射的发光图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但 不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在描述一些实施例时，可能使用了“耦接”和“连接”及其衍伸的表达。例如，描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如，描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而，术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触，但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
“A和/或B”，包括以下三种组合：仅A，仅B，及A和B的组合。
如本文中所使用，根据上下文，术语“如果”任选地被解释为意思是“当……时”或“在……时”或“响应于确定”或“响应于检测到”。类似地，根据上下文，短语“如果确定……”或“如果检测到[所陈述的条件或事件]”任选地被解释为是指“在确定……时”或“响应于确定……”或“在检测到[所陈述的条件或事件]时”或“响应于检测到[所陈述的条件或事件]”。
本文中“适用于”或“被配置为”的使用意味着开放和包容性的语言，其不排除适用于或被配置为执行额外任务或步骤的设备。
另外，“基于”的使用意味着开放和包容性，因为“基于”一个或多个所述条件或值的步骤、步骤、计算或其他动作在实践中可以基于额外条件或超出所述的值。
如本文所使用的那样，“约”、“大致”或“近似”包括所阐述的值以及处于特 定值的可接受偏差范围内的平均值，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。
如本文所使用的那样，“平行”、“垂直”、“相等”包括所阐述的情况以及与所阐述的情况相近似的情况，该相近似的情况的范围处于可接受偏差范围内，其中所述可接受偏差范围如由本领域普通技术人员考虑到正在讨论的测量以及与特定量的测量相关的误差(即，测量系统的局限性)所确定。例如，“平行”包括绝对平行和近似平行，其中近似平行的可接受偏差范围例如可以是5°以内偏差；“垂直”包括绝对垂直和近似垂直，其中近似垂直的可接受偏差范围例如也可以是5°以内偏差。“相等”包括绝对相等和近似相等，其中近似相等的可接受偏差范围内例如可以是相等的两者之间的差值小于或等于其中任一者的5％。
应当理解的是，当层或元件被称为在另一层或基板上时，可以是该层或元件直接在另一层或基板上，或者也可以是该层或元件与另一层或基板之间存在中间层。
本文参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中，为了清楚，放大了层和区域的厚度。因此，可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此，示例性实施方式不应解释为局限于本文示出的区域的形状，而是包括因例如制造而引起的形状偏差。例如，示为矩形的蚀刻区域通常将具有弯曲的特征。因此，附图中所示的区域本质上是示意性的，且它们的形状并非旨在示出设备的区域的实际形状，并且并非旨在限制示例性实施方式的范围。
本公开的一些实施例提供了发光装置，该发光装置包括发光基板，当然还可以包括其他部件，例如可以包括用于向发光基板提供电信号，以驱动该发光基板发光的电路，该电路可以称为控制电路，可以包括与发光基板电连接的电路板和/或集成电路(Integrate Circuit，IC)。
在一些实施例中，该发光装置可以为照明装置，此时，发光装置用作光源，实现照明功能。例如，发光装置可以是液晶显示装置中的背光模组，用于内部或外部照明的灯，或各种信号灯等。
在另一些实施例中，该发光装置可以为显示装置，此时，该发光基板为显示基板，用于实现显示图像(即画面)功能。发光装置可以包括显示器或包含显示器的产品。其中，显示器可以是平板显示器(Flat Panel Display，FPD)，微型显示器等。若按照用户能否看到显示器背面的场景划分，显示器可以是 透明显示器或不透明显示器。若按照显示器能否弯折或卷曲，显示器可以是柔性显示器或普通显示器(可以称为刚性显示器)。示例的，包含显示器的产品可以包括：计算机显示器，电视，广告牌，具有显示功能的激光打印机，电话，手机，个人数字助理(Personal Digital Assistant，PDA)，膝上型计算机，数码相机，便携式摄录机，取景器，车辆，大面积墙壁，剧院的屏幕或体育场标牌等。
本公开的一些实施例提供了一种发光基板1，如图1和图2所示，该发光基板1包括衬底10、设置在衬底10上的驱动电路层DCL、像素界定层12和多个发光器件13。其中，该像素界定层12具有多个开口Q，多个发光器件13可以与多个开口Q一一对应设置。这里的多个发光器件13可以是发光基板1包含的全部或部分发光器件13；多个开口Q可以是像素界定层12上的全部或部分开口。
该发光基板1可以发白光、单色光(单一颜色的光)或颜色可调的光等。
在第一种示例中，该发光基板1可以发白光。此时，第一种情况，发光基板1包含的多个发光器件13(例如可以是全部的发光器件13)均发白光。此时，每个发光器件13中的发光图案133的材料可以包括红色发光材料、绿色发光材料和蓝色发光材料的混合材料。这时，可以通过驱动每个发光器件13发光，以实现发白光。第二种情况，如图1和图2所示，多个发光器件13包括发红色的光的发光器件13R，发绿色的光的发光器件13G和发蓝色的光的发光器件13B，其中，发光器件13R中的发光图案133的材料可以包括红色发光材料，发光器件13G中的发光图案133的材料可以包括绿色发光材料，发光器件13B中的发光图案133的材料可以包括蓝色发光材料。此时，可以通过控制发光器件13R、发光器件13G和发光器件13B发光的亮度，以使得发光器件13R、发光器件13G和发光器件13B实现混光，以使发光基板1呈现白光。
在该示例中，该发光基板1可用于照明，即可以应用于照明装置中。
在第二种示例中，该发光基板1可以发单色光。第一种情况，发光基板1包含的多个发光器件13(例如可以是全部的发光器件13)均发单色光(如红光)，此时，每个发光器件13中的发光图案133的材料包括红色发光材料。这时，可以通过驱动每个发光器件13发光，以实现发红光。第二种情况，该发光基板1与第一种示例中的第二种情况所描述的多个发光器件的结构相类似，此时，可以通过单独驱动发光器件13R、发光器件13G或发光器件13B实现单色发光。
在该示例中，该发光基板1可用于照明，即可以应用于照明装置中，也可以用于显示单一色彩的图像或画面，即可应用于显示装置中。
在第三种示例中，该发光基板1可以发颜色可调的光(即彩色光)，该发光基板1与第一种示例中的第二种情况所描述的多个发光器件的结构相类似的，通过对各个发光器件13的亮度进行控制，即可对该发光基板1发出的混合光的颜色和亮度进行控制，可实现彩色发光。
在该示例中，该发光基板可用于显示图像或画面，即可应用于显示装置中，当然，该发光基板也可以用于照明装置中。
在第三种示例中，以该发光基板1为显示基板为例，如全彩显示面板，如图3所示，该发光基板1包括显示区A和设置于显示区A周边的周边区S。显示区A包括多个亚像素区Q’，每个亚像素区Q’对应一个开口Q，一个开口Q对应一个发光器件，每个亚像素区Q’中设置有用于驱动对应的发光器件发光的像素驱动电路200。周边区S用于布线，如连接像素驱动电路200的栅极驱动电路100。
在一些实施例中，像素驱动电路200可以包括薄膜晶体管和电容。示例的，像素驱动电路200可以为2T1C的结构。
当然，在一些实施例中，该像素驱动电路200也可以为7T1C或3T1C的结构等。如图4所示，示出了像素驱动电路200为3T1C的结构的具体示例。
另外，需要说明的是，为了实现全彩显示面板的白平衡，对于不同发光颜色的亚像素区而言，发红光的亚像素区Q’的面积和发绿光的亚像素区Q’的面积大于发蓝光的亚像素区Q’的面积，进一步地，发红光的亚像素区Q’的面积可以等于发绿光的亚像素区Q’的面积，或者，发红光的亚像素区Q’的面积可以大于或小于发绿光的亚像素区Q’的面积。
在一些实施例中，如图2所示，上述显示装置除包括显示基板以外，还可以包括设置于显示基板上的封装层14和光控制层15，封装层14用于对发光器件13进行保护，光控制层15可以通过外部光控制来自显示基板的反射光。示例的，光控制层15可以包括偏光片和/或滤色器层(如CF(Color Film，彩膜)层)。
发光器件的发光材料可以是量子点发光材料，此时，相应的发光器件可以称为量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)。QLED也被应用在显示领域中。发光器件中的发光图案的制备技术主要有喷墨打印技术、光刻技术、转印技术等，其中，光刻技术是制备高分辨率QLED的最有前景的方法。
光刻技术，也即，采用曝光、显影的方式实现量子点图案化的技术，在此，有两种可能的情况。
第一种情况，采用直接光刻法实现量子点发光材料的图案化。需要说明的是，量子点发光材料为发光基板上具有的发光材料，制备量子点发光材料的原料可以称为量子点初始发光材料。具体的，量子点初始发光材料包括量子点和与量子点结合的光敏配体。光敏配体为能够在光照下发生分解反应或交联反应的配体。
量子点初始发光材料形成薄膜后，可以采用掩膜版曝光。薄膜的部分区域曝光，其他区域未曝光。在薄膜的曝光区域，光敏配体在光照下发生反应，生成另一种配体(为了区别光敏配体，可称为光变配体)。光变配体和光敏配体在同一显影液中的溶解度不同。而包含量子点的材料的溶解度主要由配体的溶解度决定，即，配体在显影液中的溶解度高，则相应的包含量子点的材料的溶解度在该显影液中的溶解度也高。因而，薄膜中的曝光区域和非曝光区域在上述同一显影液中的溶解度也不同。如此，在后续的显影步骤中，显影液将薄膜中的曝光区域或非曝光区域除去，得到图案化的量子点发光材料。
第二种情况，利用牺牲层实现量子点发光材料的图案化，具体的，在形成量子点发光材料之前，先在量子点初始发光材料需要去除的区域形成牺牲层，采用牺牲层洗脱的方法对量子点发光材料进行图案化。
上述图案化方法虽然便于工艺流程的控制，能够有效实现高分辨率的QLED产品的生产，但是，对于第一种情况，该图案化方法存在上一层量子点发光材料(如红色量子点(RQD(Red Quantum Dot))发光材料)洗脱不完全的问题，这样会使下一种颜色的量子点发光材料(如绿色量子点(GQD(Green Quantum Dot))发光材料)图案化工艺后有前一层量子点发光材料残留，从而造成混色的问题，在点亮时，容易出现发光光谱不纯的问题，从而影响器件性能。对于第二种情况，该图案化方法虽然可以避免量子点发光材料的残留，但是在洗脱步骤中，量子点发光材料被不断洗脱，造成量子点发光材料的丢失，不利于量子点发光材料的使用率的提高。
基于此，提供一种可以采用直接光刻法实现量子点发光材料的图案化，且量子点发光材料残留少，发光光谱纯的发光基板。
在一些实施例中，参见图5，提供一种发光基板1，包括衬底10和第一发光器件20。
衬底10可以是：无机材料、有机材料、硅晶片或复合材料层等。无机材 料示例地可以为玻璃、金属等；有机材料示例地可以为聚碳酸酯、聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚酰胺、聚醚砜、或其组合等。
第一发光器件20为上述多个发光器件中的一部分，例如为上述多个发光器件中的一个或几个，也就是说第一发光器件20的数量为至少一个(例如多个)。第一发光器件20可以为红色发光器件、绿色发光器件或蓝色发光器件。
第一发光器件20包括沿远离衬底10的方向依次设置的第一电极210、第一功能层220、第一发光图案230和第二电极240。
为了便于描述，可将第一电极210在发光基板上所在的层可以称为第一电极图案层80A。第二电极240在发光基板上所在的层可以称为第二电极图案层80B。第一电极210和第二电极240可以是透射电极、部分透过部分反射电极或反射电极。透射电极或部分透过部分反射电极的材料可以包括：导电氧化物例如氧化锌、氧化铟、氧化锡、氧化铟锡(ITO)、氧化铟锌(IZO)、或氟掺杂氧化锡，或者金属薄层。反射电极可以包括：反射金属，例如：不透明导体例如铝(Al)、银(Ag)、或金(Au)，第一电极210和第二电极240可以是单层或多层结构。第一电极210或第二电极240的至少一者可以与辅助电极连接。如果与辅助电极连接，可以减小第二电极240的电阻。
第一电极210和第二电极240的类型可以根据发光基板1的出光方式进行设置。示例性地，发光基板1根据出光方式划分，可以包括顶发射型发光基板、底发射型发光基板或双面发射型发光基板。
例如，在发光基板1为顶发射型发光基板的情况下，第二电极240可以为透射电极，第一电极210可以为反射电极。
又如，在发光基板1为底发射型发光基板的情况下，第一电极210为透射电极，第二电极240为反射电极。
再如，在发光基板1为双面发射型发光基板的情况下，第一电极210和第二电极240均为透射电极。
第一电极210和第二电极240其中一者为阳极，另一者为阴极。在一些实施例中，第一电极210可以为阳极，此时，第二电极240为阴极。在另一些实施例中，第一电极210可以为阴极，此时，第二电极240为阳极。
在一些实施例中，阳极可包括具有高的功函数的导体例如金属、导电金属氧化物、或其组合。金属可以是镍、铂、钒、铬、铜、锌、或金、或其合金；导电金属氧化物可以是氧化锌、氧化铟、氧化锡、氧化铟锡(ITO)、氧化铟锌(IZO)、或氟掺杂氧化锡；或者，金属和导电金属氧化物的组合可以 是ZnO和Al、SnO 2和Sb或ITO/Ag/ITO，但不限于此。
阴极可包括具有比阳极低的功函数的导体例如金属、导电金属氧化物、和/或导电聚合物。阴极可包括，如，金属可以是铝、镁、钙、钠、钾、钛、铟、钇、锂、钆、银、锡、铅、铯、钡等、或其合金；多层结构例如LiF/Al、Li 2O/Al、Liq/Al、LiF/Ca、和BaF 2/Ca；导电金属氧化物可以是氧化锌、氧化铟、氧化锡、氧化铟锡(Indium Tin Oxides，ITO)、氧化铟锌(Indium Zinc Oxides，IZO)、或氟掺杂氧化锡，但不限于此。
阳极的功函数可高于阴极的功函数，例如，阳极的功函数可为例如约4.5eV至约5.0eV且阴极的功函数可为约4.0eV至约4.7eV。在该范围内，阳极的功函数可为例如约4.6eV至约4.9eV或约4.6eV至约4.8eV，且阴极的功函数可为例如约4.0eV至约4.6eV或约4.3eV至约4.6eV。
同样地，第一电极210和第二电极240的极性可以根据发光基板1的类型进行设置。上述第一发光器件20可以为“正置”式发光器件或“倒置”式发光器件。
在第一发光器件20为“正置”式发光器件的情况下，第一电极210为阳极，第二电极240为阴极。在发光器件为“倒置”式发光器件的情况下，第一电极210为阴极，第二电极240为阳极。
第一发光器件20的发光原理为：通过阳极和阴极连接的电路，利用阳极向第一发光图案230注入空穴，阴极向第一发光图案230注入电子，所形成的电子和空穴在第一发光图案230中形成激子，激子通过辐射跃迁回到基态，发出光子。
第一发光图案230包括第一发光材料。除了第一发光材料外，第一发光图案230还包括少量混在第一发光材料中的第一功能材料。第一发光图案230主要第一发光材料构成，在第一发光图案230的所有组成物质中，第一发光材料占90％以上。第一发光材料包括第一发光粒子231以及与第一发光粒子231结合的第一配体。
第一发光粒子231可以为量子点。量子点可以为半导体纳米晶体，并且可具有多种形状例如球形、锥形、多臂和/或立方形的纳米颗粒、纳米管、纳米线、纳米纤维、纳米板颗粒、量子棒、或量子片。在这里，量子棒可为具有大于约1、例如大于或等于约2、大于或等于约3、或者大于或等于约5的纵横比(长径比)(长度:宽度比)的量子点。例如，所述量子棒可具有小于或等于约50、小于或等于约30、或者小于或等于约20的纵横比。
量子点可具有核壳结构，例如，具有一个量子点核和围绕量子点核的量 子点壳。量子点也可以为只有量子点核的结构。
量子点核的材料可以为II-VI族半导体化合物、III-V族半导体化合物、IV-VI族半导体化合物、IV族半导体、I-III-VI族半导体化合物、I-II-IV-VI族半导体化合物、II-III-V族半导体化合物、或其组合。II-VI族半导体化合物可例如选自：二元化合物例如CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、MgSe、MgS、或其混合物。三元化合物例如CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、或其混合物。和四元化合物例如HgZnTeS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe、或其混合物，但不限于此。III-V族半导体化合物可例如选自：二元化合物例如GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs、InSb、或其混合物；三元化合物例如GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb、或其混合物；和四元化合物例如GaAlNP、GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb、或其混合物，但不限于此。IV-VI族半导体化合物可例如选自：二元化合物例如SnS、SnSe、SnTe、PbS、PbSe、PbTe、或其混合物；三元化合物例如SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe、SnPbTe、或其混合物；和四元化合物例如SnPbSSe、SnPbSeTe、SnPbSTe、或其混合物，但不限于此。IV族半导体可例如选自：单质(一元)半导体例如Si、Ge、或其混合物；和二元半导体化合物例如SiC、SiGe、和其混合物，但不限于此。I-III-VI族半导体化合物可为例如CuInSe2、CuInS2、CuInGaSe、CuInGaS、或其混合物，但不限于此。I-II-IV-VI族半导体化合物可为例如CuZnSnSe、CuZnSnS、或其混合物，但不限于此。II-III-V族半导体化合物可包括例如InZnP，但不限于此。
量子点壳为具有与量子点核的组成不同且包括锌(Zn)、硒(Se)、和/或硫(S)元素的化合物。例如，量子点壳可以包括ZnSeS、ZnSe和ZnS中的一种或几种。
量子点可具有例如约1nm至约100nm、约1nm至约80nm、约1nm至约50nm、或约1nm至20nm的颗粒直径(对于非球形形状，平均最大颗粒长度)。需要说明的是，无论量子点为具有核壳结构或为没有量子点壳的量子点核的结构，量子点发何种颜色的光均是由量子点核决定的。因而，量子点的粒径 或尺寸均是指量子点核的粒径或尺寸。另外需要说明的是，由于单个量子点之间的粒径或尺寸会有所不同，所以，量子点的粒径或尺寸是指平均粒径或平均尺寸。同样地，下文中的涉及发光粒子(例如，第一发光粒子、第二发光粒子以及第三发光粒子)的粒径以及功能粒子(例如，第一功能粒子、第二功能粒子以及第三功能粒子)的粒径均是指平均粒径。可根据量子点的尺寸和组成控制量子点的能带隙，因此可控制量子点的发光波长。例如，当量子点的尺寸增加时，量子点可具有窄的能带隙且因此配置成发射在相对长的波长区域中的光，而当量子点的尺寸减小时，量子点可具有宽的能带隙且因此配置成发射在相对短的波长区域中的光。例如，量子点可根据其尺寸和/或组成而配置成发射在可见光区域的预定波长区域中的光。例如，量子点可配置成发射蓝色光、红色光、或绿色光，并且蓝色光可具有例如在约430nm至约480nm中的峰值发射波长(λ最大)，红色光可具有例如在约600nm至约650nm中的峰值发射波长(λ最大)，且绿色光可具有例如在约520nm至约560nm中的峰值发射波长(λ最大)。
示例性地，配置成发射蓝色光的量子点的平均颗粒尺寸可小于或等于约4.5nm，例如，所述量子点的平均颗粒尺寸可为约2.0nm至约4.5nm、又如约2.0nm至约4.3nm、再如约2.0nm至约4.0nm。
示例性地，配置成发射绿色光的量子点的平均颗粒尺寸在3～5nm，例如，量子点的平均颗粒尺寸可为约3.0nm至约4.0nm，又如，约3.0nm至约4.4nm，再如约3.8nm至约5.0nm。
示例性地，配置成发射绿色光的量子点的平均颗粒尺寸在3.5～5.5nm，例如，量子点的平均颗粒尺寸可为约3.5nm至约4.6nm，又如，约3.7nm至约5.0nm，再如约4.1nm至约5.5nm。
第一配体通常为有机物配体。有机物配体可以通过双功能分子偶联、疏水相互作用、硅烷化、静电作用或者聚合物微球包覆的方式稳定结合在第一发光粒子231的表面。有机配体具有大的偶极矩，能够将激子能量传递给第一发光粒子231，从而增强第一发光粒子231的荧光强度；同时，有机配体的存在能够稳定第一发光粒子231，防止第一发光粒子231团聚，让第一发光粒子231均匀分散。
包含第一发光材料的溶液采用的溶剂通常为有机溶剂(有机溶剂通常不溶于水，也可以称为油性溶剂)。根据相似相溶的原理，第一发光粒子231难溶于有机溶剂中，故而，第一发光材料在有机溶剂中的溶解度取决于与第一发光粒子231结合的第一配体在有机溶剂中的溶解度。
如图5所示，发光基板1中的第一功能层220可以进一步提高第一发光器件20的发光效率。
第一功能层220可以是载流子辅助层中的一种。载流子辅助层包括电子注入层(Electron Inject Layer，EIL)、电子传输层(Electronic Transport Layer，ETL)、空穴阻挡层(Hole Blocking Layer，HBL)、空穴注入层(Hole Injection Layer，HIL)、空穴传输层(Hole Transport Layer，HTL)和电子阻挡层(Electron Blocking Layer，EBL)中的至少一种。
第一功能层220位于第一电极210和第一发光图案230之间。第一功能层220与第一电极210之间可以不包括其他膜层，如此第一功能层220与第一电极210接触。第一功能层220与第一电极210接触之间也还可以包括一层或几层其他膜层，(如下文的辅助功能层30以及载流子辅助层除辅助功能层30和第一功能层220之外的层)，在该情形下，第一电极210与其他膜层(如辅助功能层30)接触。
第一功能层220与第一发光图案230接触。第一功能层220可以具有提高空穴的传输速率以及降低电子的传输速率的功能，或者可以具有降低空穴的传输速率以及提高电子的传输速率的功能。如此，可以根据第一发光器件20中空穴的传输速率和电子的传输速率的差异，设置第一功能层220来缩小二者之间的差异，使得空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
第一功能层220包括第一功能材料。除了第一功能材料外，第一功能层220还包括少量混在第一功能材料中的第一发光材料。第一功能层220主要第一功能材料构成，第一功能层220的所有组成物质中，例如，第一发光材料的占比小于5％(在该条件下，发光基板1不会出现混色现象)，其他组成物质均为第一功能材料。第一功能材料包括第一功能粒子221以及与所述第一功能粒子221结合的第二配体。第一功能粒子221为不具有发光性能的，粒径与量子点的粒径相近的粒子。第一功能粒子221可以不具有壳结构。第一功能粒子221进行荧光量子产率测试，表现为没有发射光谱，即没有发射峰。第一功能粒子221的粒径可以与量子点的粒径相等，或者小于量子点的粒径或者大于量子点的粒径(例如，参考下文描述，可以选择粒径小于量子点的粒径的第一功能粒子221)。第一功能粒子221仍为纳米材料，其在长宽高三个维度上均位于纳米范畴内。
在一些实施例中，第一功能粒子221为N型半导体、P型半导体或绝缘 体。
P型半导体可以是P型半导体氧化物。P型半导体氧化物是以空穴作为载流子传导电荷的一类金属氧化物，其中的金属与氧的原子数目比不是严格按照其化学式中原子数目之比，而是氧原子数目略多，氧化物中存在的结构缺陷为金属离子空位。P型半导体氧化物可以是NiO x、MoO x、WO x、VO x或CrO x等氧化物。
P型半导体也可以是P型半导体非氧化物，例如，CuI，SnS，CuSCN等。
P型半导体以空穴作为载流子传导电荷，因而，P型半导体一方面可以促进空穴的传输和注入，另一方面，P型半导体的传输电子的能力较弱，因而传输电子的速率较低。故而，当第一功能粒子221为P型半导体时，第一功能层220既可以促进空穴的传输和注入，也可以降低电子的传输速率。
示例性地，第一发光器件20为“正置”式发光器件，第一电极210为阳极，第二电极240为阴极。当第一发光器件20中电子的传输速率大于空穴的传输速率时(例如，第二电极240和第一发光图案230之间还设有电子传输层，如电子传输层的材料为ZnO)，第一功能层220的第一功能粒子221的材料可选择P型半导体。第一功能层220设置在第一电极210和第一发光图案230之间，第一功能层220第一功能层220可以促进空穴的传输和注入，从而增大第一发光器件20中的空穴的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
又示例性地，第一发光器件20为“倒置”式发光器件，第一电极210为阴极，第二电极240为阳极。当第一发光器件20中电子的传输速率大于空穴的传输速率时(例如，第一电极210和第一发光图案230之间还设有电子传输层，如电子传输层的材料为ZnO)，第一功能层220的第一功能粒子221的材料可选择P型半导体。第一功能层220设置在电子传输层和第一发光图案230之间，第一功能层220传导电子的速率较低，从而降低了第一发光器件20中的电子的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
N型半导体可以是N型半导体氧化物。N型半导体氧化物是以电子作为载流子传导电荷的一类金属氧化物，其中的金属与氧的原子数目比不是严格按照其化学计量式之比，而是金属原子数目略多。N型半导体氧化物可以是 ZnMgO、TiO 2、SnO 2或CdO等。
N型半导体也可以是N型半导体非氧化物。例如，CsS、ZnF 2或Cs 2Se等。
N型半导体以电子作为载流子传导电荷，因而，N型半导体一方面可以促进电子的传输和注入，另一方面，N型半导体的传输空穴的能力较弱，因而传输空穴的速率较低。故而，当第一功能粒子221为N型半导体时，第一功能层220既可以促进电子的传输和注入，也可以降低空穴的传输速率。
示例性地，第一发光器件20为“正置”式发光器件，第一电极210为阳极，第二电极240为阴极。当第一发光器件20中空穴的传输速率大于电子的传输速率时(例如，第一电极210和第一发光图案230之间设有还空穴传输层，如空穴传输层的材料为NiO x)，第一功能层220的第一功能粒子221的材料可选择N型半导体。第一功能层220设置在空穴传输层和第一发光图案230之间，第一功能层220传输空穴的速率较低，从而降低第一发光器件20中的空穴的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
又示例性地，第一发光器件20为“倒置”式发光器件，第一电极210为阴极，第二电极240为阳极。当第一发光器件20中空穴的传输速率大于电子的传输速率时(例如，第一电极210和第一发光图案230之间还设有空穴传输层，如空穴传输层的材料为NiO x)，第一功能层220的第一功能粒子221的材料可选择N型半导体。第一功能层220设置在第一电极210和第一发光图案230之间，第一功能层220中可以提供一部分电子，从而提高第一发光器件20中的电子的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
在一些实施例中，绝缘体为不容易导电的物体。绝缘体可以是SiO 2、ZrO 2,HfO 2或MgO。
绝缘体不容易传导电子或空穴，故而，当第一功能粒子221为绝缘体时，第一功能层220可以阻挡空穴和电子。
示例性地，第一发光器件20为“正置”式发光器件，第一电极210为阳极，第二电极240为阴极。当第一发光器件20中空穴的传输速率大于电子的传输速率时(例如，第一电极210和第一发光图案230之间设有空穴传输层，如空穴传输层的材料为NiO x)，第一功能层220的第一功能粒子221的材料可 选择绝缘体。第一功能层220设置在空穴传输层和第一发光图案230之间，第一功能层220可以阻碍空穴的传输，从而降低第一发光器件20中的空穴的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
又示例性地，第一发光器件20为“倒置”式发光器件，第一电极210为阴极，第二电极240为阳极。当第一发光器件20中电子的传输速率大于空穴的传输速率时(例如，第一电极210和第一发光图案230之间设有电子传输层，如电子传输层的材料为ZnO)，第一功能层220的第一功能粒子221的材料可选择绝缘体。第一功能层220设置在电子传输层和第一发光图案230之间，第一功能层220可以阻碍电子的传输，从而降低第一发光器件20中的电子的传输速率。如此一来，电子的传输速率与空穴的传输速率之间的差值缩小，空穴的传输速率和电子的传输速率较为均衡，从而提高第一发光图案230中的形成激子数量，进而提高第一发光器件20的发光效率。
在第一发光器件20为“倒置”式发光器件的情形下，当第一发光器件20为发射红色光的发光器件或发射绿色光的发光器件时，第一发光器件20可能是多电子器件，即电子的传输速度大于空穴的传输速度，因此，第一功能层220的第一功能粒子221的材料可以优先考虑P型半导体。
同样地，在第一发光器件20为“倒置”式发光器件的情形下，当第一发光器件20为发射蓝色光的发光器件时，第一发光器件20可能是多空穴器件，即空穴的传输速度大于电子的传输速度，因此，第一功能层220的第一功能粒子221的材料可以优先考虑N型半导体。
第二配体同样也可以为有机配体。第二配体与第一功能粒子221的结合方式可以参考第一配体与第一发光粒子231的结合方式，不再赘述。有机配体的存在能够稳定第一功能粒子221，防止第一功能粒子221团聚，让第一功能粒子221均匀分散。相应的，第一功能材料的溶解度也主要由第二配体决定。
第一配体可以是第一光敏配体或第一光变配体(即第一光敏配体的光照产物)，具体是哪一种配体由第一发光图案230的制作方式来决定。同样地，第二配体是第二光敏配体还是第二光变配体(即第二光敏配体的光照产物)，由第一功能层220的制作方式来决定。
以下结合第一发光图案230和第一功能层220的制作方式来进行详细说明。
参照图5，第一发光图案230和第一功能层220可以是在第一混合溶液形成的第一混合薄膜的基础上，通过曝光、显影的方式来形成的。第一混合溶液包括第一溶剂和溶解在第一溶剂中的第一初始发光材料和第一初始功能材料。第一初始发光材料为第一发光材料对应的原料。第一初始发光材料包括第一发光粒子231和与第一发光粒子231结合的第一光敏配体。第一初始功能材料为第一功能材料对应的原料。第一初始功能材料包括第一功能粒子221和与第一功能粒子221结合的第二光敏配体。第一溶剂为有机溶剂(油性溶剂)，可以是甲苯，氯仿，庚烷和辛烷中一种或几种。
第一混合溶液可以采用配体交换的方式制备。具体地，可以包括以下步骤：
第一发光粒子231制备后，其表面结合有配体(可以称为初始配体)。当该初始配体不满足要求，例如光敏要求时，可对第一发光粒子231进行配体交换。将第一光敏配体与初始配体进行交换，使得第一发光粒子231的表面结合第一光敏配体，得到第一初始发光材料。第一初始发光材料可以为溶液状态，其溶剂为第一溶剂。
同样地，对第一功能粒子221进行配体交换，使得第一发光粒子231的表面结合第二光敏配体，得到第一初始功能材料。第一初始功能材料可以为溶液状态，其溶剂为第一溶剂。
将第一初始发光材料和第一初始功能材料混合得到第一混合溶液。
参照图6和图7，第一混合薄膜60同时包含第一初始功能材料和第一初始发光材料，并且大部分第一初始功能材料位于第一初始发光材料下方，即靠近第一电极210。
在第一混合薄膜60中，第一初始发光材料形成的结构，可以称为第一混合薄膜60的第一发光部分62(结构与下文的第一发光薄膜72类似)。第一初始功能材料形成的结构，可以称为第一混合薄膜60的第一功能部分61(结构与下文的第一功能薄膜71类似)。
参见图7，由于第一初始发光材料(例如量子点)之间有空隙，并且，第一混合薄膜60的第一发光部分62的厚度也较薄，例如30～50nm，故而曝光采用的光，如紫外光(Ultraviolet Rays，UV)可以透过第一发光部分62照射到第一功能部分61上。此外，UV光的能量也较强。如此，在该第一混合薄膜60中可以通过一次曝光和一次显影形成第一功能层220和第一发光图案230。
在曝光步骤中，通常是通过掩膜版进行曝光。掩膜版上具有开口，光线 可以通过开口照射到下方掩膜版下方。继续参见图7，在一些实施例中，掩膜版的开口的形状可以对应第一发光图案230，即对应于第一区域20A。第一区域20A为第一发光器件20在发光基板1上所在区域。
如此一来，第一混合薄膜60位于第一区域20A的部分为曝光区域。在第一混合薄膜60中，位于曝光区域的图案形状与第一发光图案230对应。曝光区域的第一光敏配体生成第一光变配体。而非曝光区域的第一光敏配体保持不变。同样地，曝光区域的第二光敏配体生成第二光变配体。而非曝光区域的第二光敏配体保持不变。
第一光敏配体和第一光变配体在显影液中的溶解度不同，其中一者可以被显影液溶解而冲洗掉，另一者则在显影液中固化而不被显影液冲洗掉。第一光变配体在显影液中是否溶解，可以称为第一光变配体的显影特性，也可以称为第一光敏配体的光敏特性。
同样地，第二光敏配体在曝光步骤中，生成第二光变配体。第二光敏配体和第二光变配体在显影液中的溶解度不同，其中一者可以被显影液溶解而冲洗掉，另一者则在显影液中固化而不被显影液冲洗掉。第二光变配体在显影液中是否溶解，可以称为第二光变配体的显影特性，也可以称为第二光敏配体的光敏特性。
由于，在第一发光器件20中，第一发光图案230和第一功能层220的形状相同。因而要求第一配体和第二配体的显影特性相同(亦即第一光敏配体的光敏特性和第二光敏配体的光敏特性相同)，第一配体和第二配体同时溶解于同一显影液中，或同时不溶于同一显影液中。
需要说明的是，两个配体的显影特性相同，并不要求两个配体在同一显影液中的溶解度相同。
示例性地，第一配体在显影液中的溶解度和第二配体在显影液中的溶解度可以不同，例如，第一配体在显影液中的溶解度大于第二配体在显影液中的溶解度，且二者的溶解度的差值除以第一配体在显影液中的溶解度的百分比小于等于40％。在该情形下，第一配体和第二配体可以为不相同的配体。
或第一配体在显影液中的溶解度小于第二配体在显影液中的溶解度，且二者的溶解度的差值除以第二配体在显影液中的溶解度的百分比小于等于40％。在该情形下，第一配体和第二配体可以为不相同的配体。
又一示例性地，第一配体在显影液中的溶解度和第二配体在显影液中的溶解度也可以相同。在该情形下，第一配体和第二配体可以为相同的配体。
第一光敏配体的光敏特性和第二光敏配体的光敏特性相同，是指第一光 敏配体和第二光敏配体均曝光时，生成的第一光变配体和第二光变配体的显影特性相同，均被该显影液冲洗掉或均不被该显影液冲洗掉。或者，第一光敏配体和第二光敏配体未曝光时，二者的显影特性相同，均被该显影液冲洗掉或均不被该显影液冲洗掉。
在本实施例的显影步骤中，第一光变配体和第二光变配体不溶于显影液，在显影步骤中不被显影液冲洗掉。而位于非曝光区域的第一光敏配体和第二光变配体维持原本形态，在显影步骤中被显影液冲洗掉。显影液冲洗掉非曝光区域的材料可以称为负性显影。包含相应的负性显影的图案化方式可以称为负性光刻方法。
在该情形下，第一配体为第一光变配体。具体地，第一配体可以为氨基乙硫醇、MMES(琥珀酸单[2-[(2-甲基-丙烯酰基)氧]乙基]酯)交联结构、巯基PEG丙烯酸酯交联结构或溴乙胺。相应地，第一光敏配体可以为2-(叔丁氧羰基-氨基)乙硫醇(由于叔丁氧羰基的基团简称为Boc基团。为描述方便，2-(叔丁氧羰基-氨基)乙硫醇可以用Boc来指代)、MMES(MMES光照后其双键进行交联，形成大的交联结构，即MMES交联结构)、巯基PEG丙烯酸酯(分子量1K，光照后交联成为一个大的交联结构，即巯基PEG丙烯酸酯交联结构)或N-Boc-溴乙胺(光照后形成溴乙胺)。显影液可以是氯仿、甲苯、丙二醇单甲醚乙酸酯和辛烷中的一种或几种。
示例性地，在第一光敏配体包括2-(叔丁氧羰基-氨基)乙硫醇的情况下，在应用时，在光致生酸剂(如2，4-双(三氯甲基)-6-对甲氧基苯乙烯基-S-三嗪，PAG)的存在下，在紫外线(ultraviolet，UV)的照射下，2-(叔丁氧羰基-氨基)乙硫醇即可脱掉Boc基团变为2-氨基乙硫醇，从而改变溶解度，具体反应方程式如下式所示。
上述2-(叔丁氧羰基-氨基)乙硫醇在光照下的反应方程式如下所示：
Figure PCTCN2022090584-appb-000001
又示例性地，在光敏配体包括MMES的情况下，此类配体具有如下特征：一端带有双键、三键、丙烯酸酯键、环氧乙烷等用于光照交联的基团，另一端带有配位基团：巯基、羧基、氨基等，在应用时，以(2，4，6-三甲基苯甲酰基)二苯基氧化膦(TPO)作为光引发剂，利用TPO在光照下生成的自由基引发MMES配体末端双键交联，从而改变溶解度。
同样地，第二配体为第二光变配体。具体地，第二配体可以为氨基乙硫醇、MMES交联结构、巯基PEG丙烯酸酯交联结构或溴乙胺。相应地，第二 光敏配体可以为2-(叔丁氧羰基-氨基)乙硫醇、MMES、巯基PEG丙烯酸酯或N-Boc-溴乙胺。并且，第二配体和第一配体可以相同或不同。显影液可以是氯仿、甲苯、丙二醇单甲醚乙酸酯和辛烷中的一种或几种。
在另一实施例中，参见图8，掩膜版的开口与第一发光图案230相反，即对应于衬底10上处于第一区域20A之外的区域。曝光区域位于第一区域20A之外，如此，在第一混合薄膜60中，位于曝光区域的图案形状与第一发光图案230相反。
曝光区域的第一光敏配体生成第一光变配体。而非曝光区域的第一光敏配体保持不变。同样地，曝光区域的第二光敏配体生成第二光变配体。而非曝光区域的第二光敏配体保持不变。
在本实施例的显影步骤中，第一光变配体和第二光变配体溶于显影液，在显影步骤中被显影液冲洗掉。而位于非曝光区域的第一光敏配体和第一光敏配体维持原本形态，在显影步骤中不被显影液冲洗掉。显影液冲洗掉曝光区域的材料可以称为正性显影。包含相应的正性显影的图案化方式可以称为负性光刻方法。
在该情形下，第一配体为第一光敏配体。具体地，第一配体和第一光敏配体相同，可以为2-(叔丁氧羰基-氨基)乙硫醇、MMES、SH(CH 2CH 2O) nCOCHCH 2(巯基PEG丙烯酸酯)、N-Boc-溴乙胺中的任一种。显影液可以是甲醇和/或乙醇。例如，第一光敏配体为Boc配体，Boc配体光照后生成氨基乙硫醇，当用甲醇或乙醇显影时便可以洗掉曝光的区域，即为正胶显影。
同样地，第二配体为第二光敏配体。第二配体和第二光敏配体相同，可以为2-(叔丁氧羰基-氨基)乙硫醇、MMES、巯基PEG丙烯酸酯、N-Boc-溴乙胺中的任一种。并且，第二配体和第一配体可以相同或不同。显影液可以是甲醇和/或乙醇。
以上实施例为第一混合溶液形成的第一混合薄膜60的实施例，第一混合薄膜60只进行了一次成膜的步骤，可以称为采用单层制备的工艺。参照图9，在另一些可能的实施方式中，也可以采用分层制备的工艺。即先在第一电极210或辅助功能层30上形成第一功能薄膜71，然后在第一功能薄膜71上形成第一发光薄膜72。第一功能薄膜71和第一发光薄膜72形成的组合薄膜结构70与第一混合薄膜60的结构类似。第一发光图案230和第一功能层220是在第一功能薄膜71和第一发光薄膜72形成的组合薄膜结构70的基础上，通过曝光、显影的方式来形成的。
第一功能薄膜71可以是第一功能溶液涂覆形成的。第一功能溶液包括第三溶剂和溶解在第三溶剂中的第一初始功能材料。第一初始功能材料为第一功能材料对应的原料。第一初始功能材料包括第一功能粒子221和与第一功能粒子221结合的第二光敏配体。第三溶剂为有机溶剂(油性溶剂)，可以是甲苯、氯仿、庚烷和辛烷中的一种或几种(例如，为其中一种)。
第一发光薄膜72可以是第一发光溶液涂覆形成的。第一发光溶液包括第二溶剂和溶解在第二溶剂中的第一初始发光材料。第一初始发光材料为第一发光材料对应的原料。第一初始发光材料包括第一发光粒子231和与第一发光粒子231结合的第一光敏配体。第二溶剂为有机溶剂(油性溶剂)，可以是甲苯、氯仿、庚烷和辛烷中的一种或几种(例如，为其中一种)。其中，第二溶剂和第三溶剂可以相同或不同。
由于第一功能薄膜71和第一发光薄膜72形成的组合薄膜结构70与第一混合薄膜60的结构类似。第一发光薄膜72的厚度与第一混合薄膜60中的第一发光部分62形成的结构的厚度基本相同。第一功能薄膜71的厚度与第一混合薄膜60中的第一功能部分61的厚度基本相同。如此，在该组合薄膜结构70中同样可以通过一次曝光和一次显影形成第一功能层220和第一发光图案230。
具体的曝光和显影步骤，可参照第一混合薄膜60中的相应曝光和显影步骤。
示例性地，在掩膜版的开口的形状对应第一发光图案230的情形下，可以同样采用负性光刻方法。参照图7，第一配体为第一光变配体。具体地，第一配体可以为氨基乙硫醇、MMES交联结构、巯基PEG丙烯酸酯交联结构或溴乙胺。相应地，第一光敏配体可以为2-(叔丁氧羰基-氨基)乙硫醇、MMES、巯基PEG丙烯酸酯或N-Boc-溴乙胺。显影液可以是氯仿、甲苯、丙二醇单甲醚乙酸酯和辛烷中的一种或几种。
第二配体为第二光变配体。具体地，第二配体可以为氨基乙硫醇、MMES交联结构、巯基PEG丙烯酸酯交联结构或溴乙胺。相应地，第二光敏配体可以为2-(叔丁氧羰基-氨基)乙硫醇、MMES、巯基PEG丙烯酸酯或N-Boc-溴乙胺。并且，第二配体和第一配体可以相同或不同。显影液可以是氯仿、甲苯、丙二醇单甲醚乙酸酯和辛烷中的一种或几种。
又示例性地，在掩膜版的开口与第一发光图案230相反，即对应于衬底10上处于第一区域20A之外的区域的情形下，可以采用正性光刻方法。第一配体为第一光敏配体。参照图8，具体地，第一配体和第一光敏配体相同，可 以为Boc、MMES、巯基PEG丙烯酸酯、N-Boc-溴乙胺中的任一种。显影液可以是甲醇和/或乙醇。
同样地，第二配体为第二光敏配体。第二配体和第二光敏配体相同，可以为Boc、MMES、巯基PEG丙烯酸酯、N-Boc-溴乙胺中的任一种。并且，第二配体和第一配体可以相同或不同。显影液可以是甲醇和/或乙醇。
相关技术中，量子点发光材料洗脱不完全主要是与量子点接触的膜层与量子点之间的相互作用力，如物理吸附(范德华力、毛细力、氢键)、化学作用(量子点的配体与膜层内的原子成键)，将量子点吸附在该膜层上。这种相互作用力相对比较弱。
在上述发光基板1中，第一电极210、第一功能层220、第一发光图案230在远离衬底10方向上依次设置，第一功能层220相比第一发光图案230更靠近第一电极210，第一发光图案230位于第一功能层220上，故而，在生产工艺中，第一初始功能材料位于第一初始发光图案的下方，在第一初始功能材料与第一电极210或其他膜层之间的相互作用力的作用下，在显影时，发光基板1在第一光器件以外的区域，第一初始功能材料或曝光后的第一初始功能材料会洗脱不完全，残留少量的第一功能粒子221。由于这种相互作用力相对比较弱，并且第一配体和第二配体的显影特性相同，因而第一初始发光材料或曝光后的第一初始发光材料被显影液冲洗掉，而极少的残留在第一功能粒子221上。当发光基板1在第一光器件以外的区域设置其他颜色的发光器件(如第二发光器件40)时，第二发光器件40设置在残留少量的第一功能粒子221上，由于第一功能粒子221不发光，故而不会出现混色的问题，只会显示第二发光器件40中对应第二发光粒子431激发生成的相应颜色的光。因而，发光基板1不容易出现第一发光材料残留的问题，出现混色问题的概率降低。
在一些实施例中，第一功能粒子221的粒径小于第一发光粒子231的粒径。由于，粒子的粒径会影响粒子在溶液中的迁移速率。粒径较小粒子相比粒径较大的粒子在溶液中的迁移速率较快。
在该情况下，第一功能层220和第一发光图案230的制作可以适配单层制备的工艺。具体地，可以将第一初始发光材料和第一初始功能材料溶解在相同的溶剂中，配制成第一混合溶液(由于第一混合溶液中包括第一发光粒子231，因而也可称为含有发光材料的溶液)。在含有发光材料的溶液中，第一功能粒子221的迁移速率大于第一发光粒子231的迁移速率，因而第一初始功能材料的迁移速率大于第一初始发光材料的迁移速率，第一初始功能材 料可以更快速的与辅助功能层30或第一电极210结合。因而，在形成的第一混合薄膜60中，大部分的第一初始功能材料位于第一初始发光材料下方，如此，在该第一混合薄膜60中通过一次曝光和一次显影可以形成第一功能层220和第一发光图案230。因而，在第一功能粒子221的粒径小于第一发光粒子231的粒径的情形下，第一功能层220和第一发光图案230的制作可以适配将第一初始发光材料和第一初始功能材料制成第一混合薄膜60的工艺，因而，缩短了形成薄膜的工序，提高了生产效率。
可以理解的是，在该情形下，第一功能层220和第一发光图案230的制作也可以适配分层制备的工艺。
在一些实施例中，第一功能粒子221的粒径为2nm～7nm。如此一来，在第一功能层220和第一发光图案230的制作采用单层制备的工艺的情形下，第一初始功能材料的迁移速度较快，可以较快的结合在辅助功能层30或第一电极210上，进一步增大在单层制备工艺中，第一初始功能材料位于第一初始发光材料下方的数量，因而发光基板1也就更不容易出现第一发光材料残留的问题，进一步降低了第一发光器件20出现混色问题的概率。
在一些实施例中，第一功能层220还包括第三配体，第三配体与第一功能粒子221结合。第三配体的链长小于第一配体的链长。第三配体可以是链长小于第一配体的链长的光敏配体。第三配体也可以是链长小于第一配体的链长的非光敏配体，例如，第三配体可以是戊硫醇、己硫醇、硫代乙酸乙酯、戊酸或己胺等配体。
在该情形下，第一功能层220和第一发光图案230的制作可以适配单层制备的工艺。第一功能层220中的第一配体为第一光敏配体，即在曝光步骤中，第一功能层220中的第一配体和第三配体处于第一混合薄膜60中的非曝光区域。含有发光材料的溶液使用的第一溶剂为有机溶剂。
通常情况下，配体的链长越短，其在油性溶剂中的溶解度越小。因而，第三配体在第一溶剂中的溶解度小于第一配体在第一溶剂中的溶解度。进而，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。如此一来，第一初始功能材料更容易在第一溶剂中析出、向下沉降从而与辅助功能层30或第一电极210结合，使得第一初始功能材料位于第一初始发光材料的下方。因此，发光基板1也就更不容易出现第一发光材料残留的问题，进一步降低了发光基板1出现混色问题的概率。
可以理解的是，在该情形下，第一功能层220和第一发光图案230的制作也可以采用分层制备的工艺。
在一些实施例中，第一功能层220还包括第三配体，第三配体与第一功能粒子221结合。第三配体的链长小于第一光敏配体的链长，第一配体为第一光敏配体的光照产物。第三配体可以是链长小于第一配体的链长的非光敏配体。
在该情形下，第一功能层220和第一发光图案230的制作可以适配单层制备的工艺。第一功能层220中的第一配体为第一光敏配体的光照产物。即在曝光步骤中，第一功能层220中的第一配体处于薄膜结构中的曝光区域。因而，在含有发光材料的溶液中，与第一初始发光材料结合的是第一光敏配体。在第三配体的链长小于第一光敏配体的链长的情形下，第三配体在第一溶剂中的溶解度小于第一光敏配体在第一溶剂中的溶解度。进而，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。如此一来，第一初始功能材料更容易在第一溶剂中析出、向下沉降从而与辅助功能层30或第一电极210结合，使得第一初始功能材料位于第一初始发光材料的下方。因此，发光基板1也就更不容易出现第一发光材料残留的问题，进一步降低了发光基板1出现混色问题的概率。
在一些实施例中，在第一功能粒子221上，第二配体的数量占第二配体的数量与第三配体的数量之和的比例为1/2～2/3。
第一功能粒子221上结合的所有第二配体和所述第三配体可称为总配体。由于，第二配体是第一混合薄膜60或组合薄膜结构70通过曝光、显影形成第一功能层220的关键，因而，第二配体的数量需要相对多一些。第三配体的作用是为了降低第一初始功能材料的溶解度，从而提高第一初始功能材料在含有发光材料的溶液中的迁移速率，进而提升其在辅助功能层30或第一电极210上的吸附率。并且，第一初始功能材料在含有发光材料的溶液中的溶解度只要满足小于第一初始发光材料的溶解度的条件即可，例如，略微小于第一初始发光材料的溶解度，同样可以使得第一初始功能材料在辅助功能层30或第一电极210上的吸附率大于第一初始发光材料在辅助功能层30或第一电极210上的吸附率。因而，第三配体的数量可以相对少一些。第二配体的数量占总配体的数量的1/2-2/3且第二配体的数量占总配体的数量的1/3～1/2，较为适宜。
在一些实施例中，在第一发光图案230中，第一发光粒子231的数量占第一发光粒子231的数量与第一功能粒子221的数量之和的比例为66/100～80/100。
第一发光图案230中的所有第一发光粒子231和所有第一功能粒子221 可称为总粒子。第一功能粒子221仅需要一层吸附在辅助功能层30或第一电极210上，将第一发光粒子231隔开，因而，第一功能粒子221的数量可以相对较少。第一发光粒子231是第一发光器件20发光的关键结构，其数量与第一发光器件20发的光强度相关，因而，第一发光粒子231的数量应该使第一发光粒子231可以在一层第一功能粒子221上铺2～4层第一发光粒子231。因此，在第一发光图案230中，第一发光粒子231的数量占总粒子的数量的66/100～80/100较为适宜。
在一些实施例中，为了进一步提高第一发光器件20的发光效率，发光基板1还包括辅助功能层30。辅助功能层30为载流子辅助层中除第一功能层220之外的一层。辅助功能层30位于第一电极210和第一功能层220之间。例如，在第一功能层220为空穴传输层的情形下，辅助功能层30为空穴注入层。空穴注入层位于第一电极210和空穴传输层之间。
可以理解的是，发光基板1还可以包括载流子辅助层中除第一功能层220和辅助功能层30之外的一层或几层。例如，在第一功能层220为空穴传输层以及辅助功能层30为空穴注入层的情形下，发光基板1还包括电子注入层和电子传输层中至少一种。电子注入层和电子传输层中至少一种位于第一发光图案230和第二电极240之间。
在一些实施例中，参照图10，发光基板1还包括至少一个(例如一个或多个)第二发光器件40。第二发光器件40发的光颜色和第一发光器件20发的光颜色不同。例如，第一发光器件20为红色发光器件，则第二发光器件40为绿色发光器件或蓝色发光器件。
第二发光器件40包括：沿远离衬底10的方向依次设置的第三电极410、第二功能层420、第二发光图案430和第四电极440，第二功能层420与第二发光图案430接触。第二发光器件40在发光基板1上的所在区域可以称为第二区域40A。
第二发光器件40的发光原理可以参考第一发光器件20的发光原理，不再赘述。第二发光器件40和第一发光器件20位于同一发光基板1，因而，第三电极410和第一电极210可以同层同材料。第四电极440和第二电极240可以同层同材料。也就是说，第一电极210和第三电极410位于第一电极图案层80A。第二电极240和第四电极440位于第二电极图案层80B。
需要说明的是，本申请实施例中，“同层”指的是采用同一成膜工艺(例如涂覆工艺)形成用于形成特定图形的膜层，然后利用同一掩膜版(mask)通过一次构图工艺形成的层结构。根据特定图形的不同，同一构图工艺可能包 括多次曝光、显影或刻蚀工艺，而形成的层结构中的特定图形可以是连续的也可以是不连续的，这些特定图形还可能处于不同的高度或者具有不同的厚度。
第二发光图案430主要由第二发光材料构成，第二发光材料包括第二发光粒子431以及与第二发光粒子431结合的第四配体。第二发光粒子431可以参考第一发光粒子231进行选择。
示例性地，第二发光粒子431的形状、材料可以和第一发光粒子231的形状、材料相同。例如，第二发光粒子431和第一发光粒子231均为球形的CdSe的纳米颗粒。第二发光粒子431的粒径与第一发光粒子231的粒径不同，使得第二发光粒子431和第一发光粒子231发不同颜色的光。
示例性地，第二发光粒子431的形状、材料和第一发光粒子231的形状、材料也可以至少一项(如材料不同，或形状及材料均不同)不同。例如，第一发光粒子231为球形的CdSe的纳米颗粒，第二发光粒子431为球形的PbS/ZnS的纳米颗粒，在该情形下，第二发光粒子431和第一发光粒子231发不同颜色的光。
第四配体可以参照第一发光器件20中的第二配体进行选择，不再赘述。第四配体和第二配体可以相同或者不同。
第二功能层420主要由第二功能材料构成，第二功能材料包括第二功能粒子421以及与第二功能粒子421结合的第五配体。其中，第二功能粒子421可以参照第一功能材料中的第一功能粒子221进行选择，不再赘述。第二功能粒子421和第一功能粒子221可以相同或者不同。第五配体可以参照第一功能材料中的第二配体进行选择，不再赘述。第五配体和第二配体可以相同或者不同。
第四配体和第五配体的显影特性相同。同样地，在该情形下，第四配体和第五配体可以相同或不同。
第二功能层420与第二发光图案430的制备方法，可以参考第一功能层220与第一发光图案230的制备方法，如采用单层制备的工艺(如，正性光刻方法或负性光刻方法)或分层制备工艺(如，正性光刻方法或负性光刻方法)。具体地，采用单层制备的工艺中的负性光刻方法，可以参照图11，在此不再赘述。
在一些实施例中，第二功能层420还包括第六配体。第六配体与第二功能粒子421结合，第六配体的链长小于第五配体的链长。
第六配体的作用、结构可以参照第一发光材料中的第三配体进行选择， 不再赘述。第六配体和第三配体可以相同或者不同。
可以理解的是，在第二功能粒子421上，第五配体的数量占第五配体的数量与第六配体的数量之和的比例，同样可以根据第一功能粒子221中的各配体的比例进行设置，并且可以和第一功能粒子221中的各配体的比例相同或不同。
在第二发光图案430中，第二发光粒子431的数量占第二发光粒子431的数量与第二功能粒子421的数量之和的比例，同样可以根据第一发光图案230中的各粒子的比例进行设置，并且可以和第一发光图案230中的各粒子的比例相同或不同。
由于第二发光器件40和第一发光器件20的结构类似，因而，发光基板1同样不容易出现第二发光材料残留的问题，发光基板1出现混色问题的概率降低。
参照图12，在一些实施例中，发光基板1还包括至少一个(例如一个或多个)第三发光器件50。第三发光器件50发的光颜色与第一发光器件20发的光颜色、第二发光器件40发的光颜色均不同。例如，第一发光器件20为红色发光器件，第二发光器件40为绿色发光器件，则第三发光器件50为蓝色发光器件。第三发光器件50在发光基板1上的所在区域可以称为第三区域50A。
第三发光器件50包括：沿远离衬底10的方向依次设置的第五电极510、第三功能层520、第三发光图案530和第六电极540，第三功能层520与第三发光图案530接触。
第三发光器件50的发光原理可以参考第一发光器件20的发光原理，不再赘述。第三发光器件50、第二发光器件40、第一发光器件20位于同一发光基板1，因而，第五电极510可以与第三电极410和第一电极210中的至少一者同层同材料(例如，第五电极510、第三电极410和第一电极210均同层同材料，均位于第一电极图案层80A)。第六电极540可以与第四电极440和第二电极240中的至少一者同层同材料(例如，第六电极540、第四电极440和第二电极240均同层同材料，均位于第二电极图案层80B)。
其中，第三发光图案530主要由第三发光材料构成，第三发光材料包括第三发光粒子531以及与第三发光粒子531结合的第七配体。第三发光粒子531可以参考第一发光粒子231进行选择。
示例性地，第三发光粒子531、第二发光粒子431和第一发光粒子231三者的形状、材料可以均相同。例如，第三发光粒子531、第二发光粒子431和 第一发光粒子231均为球形的ZnSe的纳米颗粒。第三发光粒子531的粒径、第二发光粒子431的粒径和第一发光粒子231的粒径分别不同，使得第三发光粒子531、第二发光粒子431和第一发光粒子231发不同颜色的光。
示例性地，第三发光粒子531的形状、材料和第一发光粒子231的形状、材料也可以至少一项(如材料不同或形状及材料均不同)不同。第三发光粒子531的形状、材料和第二发光粒子431的形状、材料也可以至少一项(如材料不同或形状及材料均不同)不同。例如，第一发光粒子231为球形的CdSe的纳米颗粒，第二发光粒子431为球形的CsPbCl 3的纳米颗粒，第三发光粒子531为球形的PbS/ZnS的纳米颗粒，在该情形下，第三发光粒子531、第二发光粒子431和第一发光粒子231发不同颜色的光。
第七配体可以参照第一发光器件20中的第一配体进行选择，不再赘述。第七配体、第四配体和第一配体三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
第三功能层520主要由第三功能材料构成，第三功能材料包括第三功能粒子521以及与第三功能粒子521结合的第八配体。第七配体和第八配体的显影特性相同。
其中，第三功能粒子521可以参照第一功能材料中的第一功能粒子221进行选择，不再赘述。第三功能粒子521、第二功能粒子421和第一功能粒子221三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
第八配体可以参照第一功能材料中的第二配体进行选择，不再赘述。第八配体、第五配体和第二配体三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
第三功能层520与第三发光图案530的制备方法，可以参考第一功能层220与第一发光图案230的制备方法，如采用单层制备的工艺(如，正性光刻方法或负性光刻方法)或分层制备工艺(如，正性光刻方法或负性光刻方法)。具体地，采用单层制备的工艺中的负性光刻方法，可以参照图13，在此不再赘述。
在一些实施例中，第三功能层520还包括第九配体，第九配体与第三功能粒子521结合，第九配体的链长小于第八配体的链长。
第九配体的作用、结构可以参照第一发光材料中的第三配体进行选择，不再赘述。第九配体、第六配体和第三配体三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
可以理解的是，在第三功能粒子521上，第八配体的数量占第八配体的 数量与第九配体的数量之和的比例，同样根据第一功能粒子221中的各配体的比例进行设置。并且，第一功能粒子221中的各配体的比例、第二功能粒子421中的各配体的比例以及第三功能粒子521中的各配体的比例三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
在第三发光图案530中，第三发光粒子531的数量占第三发光粒子531的数量与第三功能粒子521的数量之和的比例，同样根据第一发光图案230中的各粒子的比例进行设置。并且，第一发光图案230中的各粒子的比例、第二发光图案430中的各粒子的比例以及第三发光图案530中的各粒子的比例三者之中可以至少两者相同(例如三者完全相同)，也可以完全不同。
由于第三发光器件50和第一发光器件20的结构类似，因而，发光基板1同样不容易出现第三发光材料残留的问题，发光基板1出现混色问题的概率降低。
在一些实施例中，参照图11和13，第一发光器件20、第二发光器件40以及第三发光器件50中的两者包括材料层。例如，第一发光器件20包括第一材料层250。第二发光器件40包括第二材料层450。第一材料层250的材料与第二功能层420的材料相同。
由于第一发光器件20、第二发光器件40以及第三发光器件50的制备顺序存在时间先后顺序。参见图11和图13，该发光基板1按照第一发光器件20、第二发光器件40以及第三发光器件50的顺序进行制备。在后制备的发光器件，在制备步骤中，形成的薄膜结构会覆盖在在先制备的发光器件的发光图案上。因此，在制备第二发光器件40步骤中的薄膜结构会覆盖第一发光器件20的第一发光图案230上。该薄膜结构显影曝光后，除了对应第二发光器件40区域(第二区域40A)的第二功能粒子421会残留在辅助功能层30或第三电极410上，第一发光图案230上的第二功能粒子421也会残留一层，该层第二功能粒子421可以称为第一材料层250。因此，第一材料层250的材料与第二发光器件40中的第二功能层420的第二功能材料相同。并且第一材料层250位于第一发光图案230远离衬底10一侧的表面，即第一材料层250位于第一发光图案230和第二电极240之间，且和第一发光图案230接触。
同样地，参见图13，在制备第三发光器件50步骤中，第二发光器件40中也会形成第二材料层450。第二材料层450的材料与第三功能层520的材料相同。第二材料层450位于第二发光图案430远离衬底10一侧的表面；即第二材料层450位于第二发光图案430和第四电极440之间，且和第二发光图案430接触。
而第三发光器件50为最后制备的发光器件，第三发光图案530上方不会再因制备其他发光器件的发光图案而形成薄膜，因而，第三发光器件50中不包括相应的材料层。
在一些实施例中，发光基板1同时包括第一发光器件20、第二发光器件40和第三发光器件50。第一发光粒子231的粒径和第二发光粒子431的粒径均大于第三发光粒子531的粒径。第一发光粒子231、第二发光粒子431和第三发光粒子531均为量子点发光材料。在该情形下，第三发光器件50为蓝色发光器件，第一发光器件20和第二发光器件40中的一者为红色发光器件，另一者为绿色发光器件。例如，第一发光器件20为红色发光器件，第二发光器件40为绿色发光器件。
当第一电极图案层80A为阴极、第二电极图案层80B为阳极时，红色发光器件和绿色发光器件为多电子器件，蓝色发光器件为多空穴器件。在该情形下，第一功能层220为P型半导体，第二功能层420为P型半导体，第三功能层250为N型半导体。
本公开的一些实施例还提供了一种含有发光材料的溶液。该含有发光材料的溶液为制备第一发光器件20的薄膜结构的原料。含有发光材料的溶液包括第一溶剂以及溶解在第一溶剂中的第一初始发光材料和第一初始功能材料。第一初始发光材料包括第一发光粒子231以及与第一发光粒子231结合的第一光敏配体。第一初始功能材料包括第一功能粒子221以及与第一功能粒子221结合的第二光敏配体。其中，第一光敏配体和第二光敏配体的光敏特性相同。
第一初始功能材料和第一初始发光材料在第一溶剂中的迁移速率的影响因素至少包括：材料在第一溶剂中的溶解度(溶解度小的材料，迁移速度快)、材料中包含粒子的粒径(也可以称为颗粒尺寸，粒子的粒径小的材料，迁移速度快)以及材料中包含粒子的性质(粒子本身与辅助功能层30或第一电极210的材料的吸附性能，粒子的吸附性能好的材料，迁移速度快)。可以从上述影响因素中的至少一个方面进行调节，使得第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率。
如此一来，含有发光材料的溶液(下文用第一混合溶液代替)在制备第一发光器件20时，当第一混合溶液涂覆在辅助功能层30或第一电极210上时，由于第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率，第一初始功能材料先于第一初始发光材料吸附在辅助功能层30或第一电极210。因而，当第一溶剂挥发时(如第一混合溶液 通过旋涂方式涂覆，第一溶剂会因旋涂步骤的加热而挥发)，在第一混合溶液形成的第一混合薄膜60中，第一初始功能层位于第一初始发光图案的下方。
在曝光、显影之后，第一初始功能材料或曝光后的第一初始功能材料会洗脱不完全，残留少量的第一功能粒子221。由于这种相互作用力相对比较弱，并且第一配体和第二配体的显影特性相同，因而第一初始发光材料或曝光后的第一初始发光材料被显影液冲洗掉，而极少的残留在第一功能粒子221上。当发光基板1在第一光器件以外的区域设置其他颜色的发光器件(如第二发光器件40)时，第二发光器件40设置在残留少量的第一功能粒子221上，由于第一功能粒子221不发光，故而不会出现混色的问题，只会显示第二发光器件40中对应第二发光粒子431激发生成的相应颜色的光。因而，发光基板1不容易出现第一发光材料残留的问题，发光基板1出现混色问题的概率降低。
而且，上述第一混合溶液只需要涂覆一次，就可以制备同时包括第一初始功能层和第一初始发光图案的薄膜结构，因而，缩短了形成薄膜结构的工序，提高了生产效率。
可以通过从溶解度的方面调节来实现第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率。在一些实施例中，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。
第一初始功能材料和第一初始发光材料在第一溶剂中的溶解度的影响因素至少包括配体的链长、配体的支链数量、配体的官能团与第一溶剂中的官能团匹配程度。可以从上述影响因素中的至少一个方面进行调节，使得第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。如此一来，第一初始功能材料更容易在第一溶剂中析出、向下沉降从而与辅助功能层30或第一电极210结合，使得第一初始功能材料位于第一初始发光材料的下方。因此，发光基板1也就更不容易出现第一发光材料残留的问题，进一步降低了发光基板1出现混色问题的概率。
在一些实施例中，含有发光材料的溶液还包括第三配体，第三配体与第一功能粒子221结合。第一功能粒子221结合了第二配体和第三配体。第一功能材料在第一溶剂中的溶解度主要取决于第二配体和第三配体。第三配体在第一溶剂中的溶解度小于第一光敏配体在第一溶剂中的溶解度。因此，第一功能材料在第一溶剂中的溶解度降低，小于第一发光材料在第一溶剂中的溶解度。
可以通过选择合适链长的配体来降低第一功能材料在第一溶剂中的溶解 度。在一些实施例中，第三配体的链长小于第一光敏配体的链长。通常情况下，配体的链长越短，其在油性溶剂中的溶解度越小。因而，第三配体在第一溶剂中的溶解度小于第一配体在第一溶剂中的溶解度，使得第一功能材料在第一溶剂中的溶解度小于第一发光材料在第一溶剂中的溶解度。
也可以通过选择合适官能团的配体来降低第一功能材料在第一溶剂中的溶解度。例如，在一些实施例中，第一光敏配体和第一溶剂包括至少一个相同的官能团，并且相同官能团越多的第一光敏配体更易于和第一溶剂互溶。而第三配体和第一溶剂不包括相同的官能团，或第三配体和第一溶剂之间的相同的官能团的数量小于第一光敏配体和第一溶剂之间的相同的官能团的数量。如此一来，第一功能材料在第一溶剂中的溶解度小于第一发光材料在第一溶剂中的溶解度。
还可以通过选择合适支链数量的配体来降低第一功能材料在第一溶剂中的溶解度。一个配体的链长最长的链为主链，连在主链上的其他链为支链。配体的链长实际是指主链的长度。例如，在一些实施例中，第一光敏配体的链长和第三配体的链长相同或相近，第一光敏配体的支链数量大于第三配体的支链数量。通常，支链数量多的配体在有机溶剂中的溶解度较大。如此一来，第一功能材料在第一溶剂中的溶解度小于第一发光材料在第一溶剂中的溶解度。
在一些实施例中，第三配体的链长小于第一光敏配体的链长。通常情况下，配体的链长越短，其在油性溶剂中的溶解度越小。因而，第三配体在第一溶剂中的溶解度小于第一配体在第一溶剂中的溶解度，使得第一功能材料在第一溶剂中的溶解度小于第一发光材料在第一溶剂中的溶解度。
在一些实施例中，第一功能粒子221的粒径小于第一发光粒子231的粒径。其技术效果可以参考发光基板1部分的相应部分的技术效果，在此不再赘述。
在一些实施例中，第一功能粒子221的粒径为2nm～7nm。其技术效果可以参考发光基板1部分的相应部分的技术效果，在此不再赘述。
在一些实施例中，在第一功能粒子221上，第二光敏配体占第二光敏配体和第三配体之和的比例为1/2～2/3。其技术效果可以参考发光基板1部分的相应部分的技术效果，在此不再赘述。
在一些实施例中，第一发光粒子231为CdS、CdSe、InP、ZnSe、PbS、CsPbCl 3、CsPbBr 3、CsPhI 3、CdS/ZnS、CdSe/ZnS、PbS/ZnS、InP/ZnS、CsPbCl 3/ZnS、CsPbBr 3/ZnS或CsPhI 3/ZnS。其技术效果可以参考发光基板1 部分的相应部分的技术效果，在此不再赘述。
在一些实施例中，第一功能粒子221为N型半导体、P型半导体或绝缘体。其技术效果可以参考发光基板1部分的相应部分的技术效果，在此不再赘述。
在一些实施例中，在含有发光材料的溶液中，第一发光粒子231的数量和第一功能粒子221的数量之比为66/100～80/100。其技术效果可以参考发光基板1部分的相应部分的技术效果，在此不再赘述。
本申请的一些实施例还提供一种发光基板1的制备方法，包括以下步骤：
S11:在衬底10上形成第一电极210。
第一电极210的材料可以根据发光基板1的类型进行选择。可以在衬底10形成第一导电层，然后对第一导电层通过曝光、显影或刻蚀工艺，得到第一电极210。
S12:在第一电极210远离衬底10一侧，形成第一功能层220和第一发光图案230。其中，第一发光图案230主要由第一发光材料构成，第一发光材料包括第一发光粒子231以及与第一发光粒子231结合的第一配体。第一功能层220主要由第一功能材料构成，第一功能材料包括第一功能粒子221以及与第一功能粒子221结合的第二配体。第一配体和第二配体的显影特性相同。
S13:在第一发光图案230远离衬底10一侧形成第二电极240。第一电极210、第一功能层220、第一发光图案230和第二电极240构成第一发光器件20。
上述发光基板1的制备方法同样能够达到与上述发光基板1相同的有益效果，在此不再赘述。
在一些实施例中，在第一电极210远离衬底10一侧，形成第一功能层220和第一发光图案230包括：
在第一电极210远离衬底10一侧涂覆第一混合溶液，得到第一混合薄膜60。其中，第一混合溶液包括第一溶剂和溶解在第一溶剂中的第一初始发光材料和第一初始功能材料，第一初始发光材料包括第一发光粒子231以及与第一发光粒子231结合的第一光敏配体。第一初始功能材料包括第一功能粒子221以及与第一功能粒子221结合的第二光敏配体。其中，第一光敏配体和第二光敏配体的光敏特性相同。第一初始功能材料在第一溶剂中的迁移速率大于第一初始发光材料在第一溶剂中的迁移速率。
对第一混合薄膜60进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230。
参见图6，在该情形下，只进行了一次涂覆成膜的工艺，得到第一混合薄膜60。参见图7和图8，涂覆成膜、曝光和显影的具体步骤以及技术效果可参见发光基板1部分的相应描述，在此不再赘述。第一发光粒子231、第一光敏配体、第一功能粒子221、第二光敏配体以及第一溶剂可参见发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，第一初始功能材料在第一溶剂中的溶解度小于第一初始发光材料在第一溶剂中的溶解度。第一初始功能材料的具体材料、第一初始发光材料的具体材料以及在该情形下的技术效果可以参考发光基板1和含有发光材料的溶液部分相应描述，在此不再赘述。
在一些实施例中，参见图7，对第一混合薄膜60进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230包括：
对第一混合薄膜60进行掩膜版曝光，第一混合薄膜60位于第一区域20A内的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体。第一区域20A为第一发光器件20所在区域。
采用第一显影液溶解并去除曝光后的第一混合薄膜60位于第一区域20A之外的部分，得到第一功能层220和第一发光图案230。其中，第一光敏配体在第一显影液中的溶解度大于第一光变配体在第一显影液中的溶解度。第二光敏配体在第一显影液中的溶解度大于第二光变配体在第一显影液中的溶解度。
在该情形下，掩膜版的开口与第一发光图案230对应。第一混合薄膜60的曝光区域为第一区域20A，即第一发光器件20所在区域。第一配体为第一光变配体，第二配体为第二光变配体。具体的步骤参照图7以及发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，参见图8，对第一混合薄膜60进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230包括：
对第一混合薄膜60进行掩膜版曝光，第一混合薄膜60位于第一区域20A之外的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体。第一区域20A为第一发光器件20所在区域。
采用第二显影液溶解并去除曝光后的第一混合薄膜60位于第一区域20A之外的部分，得到第一功能层220和第一发光图案230。其中，第一光敏配体在第二显影液中的溶解度小于第一光变配体在第二显影液中的溶解度。第二光敏配体在第二显影液中的溶解度小于第二光变配体在第二显影液中的溶解度。
在该情形下，掩膜版的开口与第一发光图案230不对应。第一混合薄膜60的曝光区域为第一区域20A之外的区域，即第一发光器件20之外的区域。第一配体为第一光敏配体，第二配体为第二光敏配体。具体的步骤参照图8以及发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，在第一电极210远离衬底10一侧，形成第一功能层220和第一发光图案230包括：
在第一电极210远离衬底10一侧，形成第一功能薄膜71，第一功能薄膜71的材料包括第一功能材料，第一功能材料包括第一功能粒子221和与第一功能粒子221结合的第二光敏配体。
在第一功能薄膜71远离衬底10的一侧，形成第一发光薄膜72，第一发光薄膜72的材料包括第一发光材料，第一发光材料包括第一发光粒子231和与第一发光粒子231结合的第一光敏配体，第一光敏配体和第二光敏配体的光敏特性相同。
对第一功能薄膜71和第一发光薄膜72进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230。
在该情形下，进行了两次成膜工艺。如，先采用第一功能溶液涂覆(如旋涂)得到第一功能薄膜71。然后，在第一功能薄膜71上，采用第一功能溶液涂覆(如旋涂)得到第一发光薄膜72。参见图7和图8，涂覆成膜、曝光和显影的具体步骤以及技术效果可参见发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，对第一功能薄膜71和第一发光薄膜72进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230包括：
对第一功能薄膜71和第一发光薄膜72进行掩膜版曝光，第一功能薄膜71和第一发光薄膜72二者位于第一区域20A内的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体。第一区域20A为第一发光器件20所在区域。
采用第三显影液溶解并去除曝光后的第一功能薄膜71和第一发光薄膜72位于第一区域20A之外的部分，得到第一功能层220和第一发光图案230。其中，第一光敏配体在第三显影液中的溶解度大于第一光变配体在第三显影液中的溶解度。第二光敏配体在第三显影液中的溶解度大于第二光变配体在第三显影液中的溶解度。
在该情形下，掩膜版的开口与第一发光图案230对应。第一功能薄膜71和第一发光薄膜72的曝光区域为第一区域20A，即第一发光器件20所在区 域。第一配体为第一光变配体，第二配体为第二光变配体。具体的步骤参照图7以及发光基板1部分的相应描述，在此不再赘述。需要说明的是，第三显影液和第一显影液的类型相同，都是用于冲洗掉非曝光区的材料的显影液。二者可以相同或者不同。
在一些实施例中，对第一功能薄膜71和第一发光薄膜72进行掩膜版曝光和显影，得到第一功能层220和第一发光图案230包括：
对第一功能薄膜71和第一发光薄膜72进行掩膜版曝光，第一功能薄膜71和第一发光薄膜72二者位于第一区域20A之外的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体。第一区域20A为第一发光器件20所在区域。
采用第四显影液溶解并去除曝光后的第一功能薄膜71和第一发光薄膜72位于第一区域20A之外的部分，得到第一功能层220和第一发光图案230。其中，第一光敏配体在第四显影液中的溶解度小于第一光变配体在第四显影液中的溶解度。第二光敏配体在第四显影液中的溶解度小于第二光变配体在第四显影液中的溶解度。
在该情形下，掩膜版的开口与第一发光图案230不对应。第一功能薄膜71和第一发光薄膜72的曝光区域为第一区域20A之外的区域，即第一发光器件20之外的区域。第一配体为第一光敏配体，第二配体为第二光敏配体。具体的步骤参照图8以及发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，参见图11，还包括以下步骤：
在衬底10上形成第三电极410。
在第三电极410远离衬底10一侧，形成第二功能层420和第二发光图案430，其中，第二发光图案430的材料包括第二发光材料，第二发光材料包括第二发光粒子431以及与第二发光粒子431结合的第四配体。第二功能层420的材料第二功能材料，第二功能材料包括第二功能粒子421以及与第二功能粒子421结合的第五配体。第四配体和第五配体的显影特性相同。
在第二发光图案430远离衬底10一侧形成第四电极440。第三电极410、第二功能层420、第二发光图案430和第四电极440构成第二发光器件40。
第二发光器件40的制备方法可以参照第一发光器件20的制备方法，如，成膜步骤中采用单层制备工艺或分层制备工艺，曝光和显影步骤中采用正性光刻方法或负性光刻方法。第二发光粒子431、第四配体、第二功能粒子421以及第五配体可参见发光基板1部分的相应描述，在此不再赘述。
在一些实施例中，参见图12和图13，还包括以下步骤：
在衬底10上形成第五电极510。
在第五电极510远离衬底10一侧，形成第三功能层520和第三发光图案530，其中，第三发光图案530的材料第三发光材料，第三发光材料包括第三发光粒子531以及与第三发光粒子531结合的第七配体。第三功能层520的材料第三功能材料，第三功能材料包括第三功能粒子521以及与第三功能粒子521结合的第八配体。第七配体和第八配体的显影特性相同。
在第三发光图案530远离衬底10一侧形成第六电极540。第五电极510、第三功能层520、第三发光图案530和第六电极540构成第三发光器件50。
第三发光器件50的制备方法可以参照第一发光器件20的制备方法，如，成膜步骤中采用单层制备工艺或分层制备工艺，曝光和显影步骤中采用正性光刻方法或负性光刻方法。第三发光粒子531、第七配体、第三功能粒子521以及第八配体可参见发光基板1部分的相应描述，在此不再赘述。
本申请的一些实施例还提供一种发光装置，包括上述的发光基板1。上述发光装置同样能够达到与上述发光基板1相应的有益效果，在此不再赘述。
下面结合具体实施例对本发明作进一步说明，但本发明并不限于以下实施例。
实施例1
发光器件为倒置底发射结构，制备步骤如下：
预先制备图案化的ITO基板，即第一发光器件20、第一发光器件20和第三发光器件50的共用的阳极。
依次用水、乙醇、丙酮清洗，氮气枪吹干备用。
旋涂ZnO层，亦即第一发光器件20、第一发光器件20和第三发光器件50的共用的辅助功能层30。
旋涂第一混合溶液得到第一混合薄膜60。第一混合溶液中包括第一发光粒子231和第一功能粒子221。其中，第一发光粒子231(发红色光的量子点)结合有第一配体(第一配体为光敏配体)。第一功能粒子221结合有第二配体(第二配体为光敏配体)和第三配体(第三配体为光敏配体或非光敏配体)。
加第一道掩膜版，对位曝光，显影，洗脱第二发光器件40的亚像素区和第三发光器件50的亚像素区的第一发光粒子231，形成第一发光图案230(对应红光亚像素)。
旋涂第二混合溶液得到第二混合薄膜80。第二混合溶液中包括第二发光粒子431和第二功能粒子421。其中，第二发光粒子431(发绿色光的量子点)结合有第四配体(第四配体为光敏配体)。第二功能粒子421结合有第五配 体(第五配体为光敏配体)和第六配体(第六配体为光敏配体或非光敏配体)。
加第二道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和第三发光器件50的亚像素区的第二发光粒子431，形成第二发光图案430(对应绿光亚像素)。
旋涂第三混合溶液得到第三混合薄膜90。第三混合溶液中包括第三发光粒子531和第三功能粒子521。其中，第三发光粒子531(发蓝色光的量子点)结合有第七配体(第七配体为光敏配体)。第三功能粒子521结合有第八配体(第八配体为光敏配体)和第九配体(第九配体为光敏配体或非光敏配体)。
加第三道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和第二发光器件40的亚像素区的第三发光粒子531，形成第三发光图案530(对应蓝光亚像素)。
最后蒸镀空穴传输层、空穴注入层以及Ag电极，并将器件进行封装。
实施例2
发光器件为正置底发射结构，制备步骤如下：
预先制备图案化的ITO基板，即第一发光器件20、第一发光器件20和第三发光器件50的共用的阳极。
依次用水、乙醇、丙酮清洗，氮气枪吹干备用。
蒸镀空穴注入层。
旋涂空穴传输层NiOx，亦即第一发光器件20、第一发光器件20和第三发光器件50的共用的辅助功能层30。
旋涂第一混合溶液得到第一混合薄膜60。第一混合溶液中包括第一发光粒子231和第一功能粒子221。其中，第一发光粒子231(发红色光的量子点)结合有第一配体(第一配体为光敏配体)。第一功能粒子221结合有第二配体(第二配体为光敏配体)和第三配体(第三配体为光敏配体或非光敏配体)。
加第一道掩膜版，对位曝光，显影，洗脱第二发光器件40的亚像素区和第三发光器件50的亚像素区的第一发光粒子231，形成第一发光图案230(对应红光亚像素)。
旋涂第二混合溶液得到第二混合薄膜80。第二混合溶液中包括第二发光粒子431和第二功能粒子421。其中，第二发光粒子431(发绿色光的量子点)结合有第四配体(第四配体为光敏配体)。第二功能粒子421结合有第五配体(第五配体为光敏配体)和第六配体(第六配体为光敏配体或非光敏配体)。
加第二道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和 第三发光器件50的亚像素区的第二发光粒子431，形成第二发光图案430(对应绿光亚像素)。
旋涂第三混合溶液得到第三混合薄膜90。第三混合溶液中包括第三发光粒子531和第三功能粒子521。其中，第三发光粒子531(发蓝色光的量子点)结合有第七配体(第七配体为光敏配体)。第三功能粒子521结合有第八配体(第八配体为光敏配体)和第九配体(第九配体为光敏配体或非光敏配体)。
加第三道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和第二发光器件40的亚像素区的第三发光粒子531，形成第三发光图案530(对应蓝光亚像素)。
旋涂电子传输层，如ZnO纳米颗粒或TiO2等；之后蒸镀阴极金属薄层，阴极可采用Al、Ag金属等，约为100-500nm，最后将器件进行封装。
实施例3
QLED器件为倒置底发射结构，制备步骤如下：
预先制备图案化的ITO基板，即第一发光器件20、第一发光器件20和第三发光器件50的共用的阳极。
依次用水、乙醇、丙酮清洗，氮气枪吹干备用。
旋涂ZnO层，亦即第一发光器件20、第一发光器件20和第三发光器件50的共用的辅助功能层30。
旋涂第一混合溶液得到第一混合薄膜60。第一混合溶液中包括第一发光粒子231和第一功能粒子221。其中，第一发光粒子231(发红色光的量子点)结合有第一配体(第一配体为光敏配体)。第一功能粒子221结合有第二配体(第二配体为光敏配体)和第三配体(第三配体为光敏配体或非光敏配体)。
加第一道掩膜版，对位曝光，显影，洗脱第二发光器件40的亚像素区和第三发光器件50的亚像素区的第一发光粒子231，形成第一发光图案230(对应红光亚像素)。
旋涂第二混合溶液得到第二混合薄膜80。第二混合溶液中包括第二发光粒子431和第二功能粒子421。其中，第二发光粒子431(发绿色光的量子点)结合有第四配体(第四配体为光敏配体)。第二功能粒子421结合有第五配体(第五配体为光敏配体)和第六配体(第六配体为光敏配体或非光敏配体)。
加第二道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和第三发光器件50的亚像素区的第二发光粒子431，形成第二发光图案430(对应绿光亚像素)。
旋涂第三混合溶液得到第三混合薄膜90。第三混合溶液中包括第三发光粒子531和第三功能粒子521。其中，第三发光粒子531(发蓝色光的量子点)结合有第七配体(第七配体为光敏配体)。第三功能粒子521结合有第八配体(第八配体为光敏配体)和第九配体(第九配体为光敏配体或非光敏配体)。
加第三道掩膜版，对位曝光，显影，洗脱第一发光器件20的亚像素区和第二发光器件40的亚像素区的第三发光粒子531，形成第三发光图案530(对应蓝光亚像素)。
最后蒸镀空穴传输层、空穴注入层以及Ag电极，并将器件进行封装。
验证试验：
首先通过配体交换制备第一混合溶液。第一混合溶液为GQD(Green Quantum Dot，绿色量子点)-Boc/NiO-AB的混合液。其中，在GQD-Boc中，GQD为第一发光粒子，第一发光粒子为发射绿色光的量子点；Boc为第一配体。在NiO-AB中，NiO为第一功能粒子；A表示第二配体，具体的，第二配体为Boc；B表示第三配体，具体的，第三配体为乙硫醇。
接着，在第一白玻璃上依次旋涂ZnO(厚度约为25nm)和GQD-Boc/NiO-AB(厚度约为30nm)。然后采用氯仿对GQD-Boc/NiO-AB进行显影，并分别测试ZnO、ZnO/GQD-Boc/NiO-AB/CCl 3的紫外可见吸收光谱。
同样地，在第二白玻璃上依次旋涂ZnO(厚度约为25nm)和GQD-Boc(厚度约为30nm)，然后采用氯仿对ZnO/GQD-Boc进行显影，并分别测试ZnO/GQD-Boc/CCl 3的紫外可见吸收光谱。
其中，上述ZnO的紫外可见吸收光谱是指在第一白玻璃上旋涂ZnO后，所得到的膜层的紫外吸收光谱，ZnO/GQD-Boc/NiO-AB/CCl 3的紫外可见吸收光谱是指在第一白玻璃上依次旋涂ZnO和GQD-Boc/NiO-AB，并采用氯仿对GQD-Boc/NiO-AB进行溶解之后，所得到的膜层的紫外吸收光谱。ZnO/GQD-Boc/CCl 3的紫外可见吸收光谱是指在第二白玻璃上依次旋涂ZnO和GQD-Boc，并采用氯仿对GQD-Boc进行溶解之后，得到的膜层的紫外吸收光谱。
上述各膜层的紫外吸收光谱的测试结果如图14所示，由图14可知，相比于ZnO的紫外可见吸收光谱，ZnO/GQD-Boc/NiO-AB/CCl 3在450nm～750nm的波长范围内的吸收值接近甚至略低于ZnO在450nm～750nm的波长范围内的吸收值。而ZnO/GQD-Boc/CCl 3在450nm～750nm的波长范围内的吸收值明显要高于ZnO在450nm～750nm的波长范围内的吸收值，这表明 ZnO/GQD-Boc/NiO-AB显影后在ZnO表面的GQD的残留量极少。
同时，采用紫外灯对ZnO/GQD-Boc/CCl 3和ZnO/GQD-Boc/NiO-AB/CCl 3进行照射，结果如图15所示。从图15可以看出ZnO/GQD-Boc/NiO-AB/CCl 3(图15右侧的玻璃基板)显影后在紫外光照射下肉眼不可见残留，而ZnO/GQD-Boc/CCl 3(图15左侧的玻璃基板)显影后在紫外光照射下显示有大量的残留，参见图15中的残留区域M。
综上所示，通过在第一发光图案上增加第一功能层，可以解决相关技术中采用直接光刻法所存在的量子点残留的问题。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (35)

  1. 一种发光基板，包括：
    衬底；
    第一发光器件，所述第一发光器件包括：沿远离所述衬底的方向依次设置的第一电极、第一功能层、第一发光图案和第二电极，所述第一功能层与第一发光图案接触；
    其中，所述第一发光图案包括第一发光材料，所述第一发光材料包括第一发光粒子以及与所述第一发光粒子结合的第一配体；所述第一功能层包括第一功能材料，所述第一功能材料包括第一功能粒子以及与所述第一功能粒子结合的第二配体；所述第一配体和所述第二配体的显影特性相同。
  2. 根据权利要求1所述的发光基板，其中，所述第一功能粒子的粒径小于所述第一发光粒子的粒径。
  3. 根据权利要求1或2所述的发光基板，其中，所述第一功能粒子的粒径为2nm～7nm。
  4. 根据权利要求1～3中任一项所述的发光基板，所述第一功能层还包括第三配体，所述第三配体与所述第一功能粒子结合，所述第三配体的链长小于所述第一配体的链长；
    或者，小于第一光敏配体的链长，所述第一配体为第一光敏配体的光照产物。
  5. 根据权利要求1～4中任一项所述的发光基板，其中，在所述第一功能粒子上，所述第二配体占所述第二配体和所述第三配体之和的比例为1/2～2/3。
  6. 根据权利要求1～5中任一项所述的发光基板，其中，所述第一功能粒子为N型半导体、P型半导体或绝缘体。
  7. 根据权利要求1～6中任一项所述的发光基板，其中，所述第一功能层和所述第一发光图案的厚度的比为1/3～1/5。
  8. 根据权利要求1～7中任一项所述的发光基板，其中，所述第一发光图案中的所述第一发光粒子的数量和所述第一功能层中的所述第一功能粒子的数量之比为66/100～80/100。
  9. 根据权利要求1～8中任一项所述的发光基板，其中，所述第一配体和所述第二配体均为光敏配体；
    或者，
    所述第一配体和所述第二配体均为光敏配体的光照产物。
  10. 根据权利要求1～9中任一项所述的发光基板，所述发光基板还包括辅助功能层；所述辅助功能层位于所述第一电极和所述第一功能层之间。
  11. 根据权利要求1～10中任一项所述的发光基板，所述发光基板还包括第二发光器件；
    所述第二发光器件包括：沿远离所述衬底的方向依次设置的第三电极、第二功能层、第二发光图案和第四电极，所述第二功能层与第二发光图案接触；
    其中，所述第二发光图案包括第二发光材料，所述第二发光材料包括第二发光粒子以及与所述第二发光粒子结合的第四配体；所述第二功能层包括第二功能材料，所述第二功能材料包括第二功能粒子以及与所述第二功能粒子结合的第五配体；所述第四配体和所述第五配体的显影特性相同。
  12. 根据权利要求11所述的发光基板，所述第二功能层还包括第六配体，所述第六配体与所述第二功能粒子结合，所述第六配体的链长小于所述第四配体的链长。
  13. 根据权利要求11或12所述的发光基板，所述第一发光器件还包括第一材料层，所述第一材料层位于所述第一发光图案远离所述衬底一侧的表面；所述第一材料层的材料与所述第二功能层的材料相同。
  14. 根据权利要求1～13中任一项所述的发光基板，所述发光基板还包括第三发光器件；
    所述第三发光器件包括：沿远离所述衬底的方向依次设置的第五电极、第三功能层、第三发光图案和第六电极，所述第三功能层与第三发光图案接触；
    其中，所述第三发光图案包括第三发光材料，所述第三发光材料包括第三发光粒子以及与所述第三发光粒子结合的第七配体；所述第三功能层包括第三功能材料，所述第三功能材料包括第三功能粒子以及与所述第三功能粒子结合的第八配体；所述第七配体和所述第八配体的显影特性相同。
  15. 根据权利要求13所述的发光基板，所述第三功能层还包括第九配体，所述第九配体与所述第三功能粒子结合，所述第九配体的链长小于所述第七配体的链长。
  16. 根据权利要求14或15所述的发光基板，在发光基板包括第二发光器件的情形下，所述第二发光器件还包括第二材料层，所述第二材料层位于所述第二发光图案远离所述衬底一侧的表面；所述第二材料层的材料与所述第三功能层的材料相同。
  17. 根据权利要求14～16中任一项所述的发光基板，在发光基板包括第二发光器件的情形下，所述第一发光粒子和所述第二发光器件中的第二发光 粒子的粒径均大于所述第三发光粒子的粒径；
    所述第一功能层和所述第二发光器件中的第二功能层为P型半导体，所述第三功能层为N型半导体。
  18. 一种含有发光材料的溶液，包括第一溶剂以及溶解在所述第一溶剂中的第一初始发光材料和第一初始功能材料；
    所述第一初始发光材料包括第一发光粒子以及与所述第一发光粒子结合的第一光敏配体；
    所述第一初始功能材料包括第一功能粒子以及与所述第一功能粒子结合的第二光敏配体；
    其中，所述第一光敏配体和所述第二光敏配体的光敏特性相同；所述第一初始功能材料在所述第一溶剂中的迁移速率大于所述第一初始发光材料在所述第一溶剂中的迁移速率。
  19. 根据权利要求18所述的含有发光材料的溶液，其中，所述第一初始功能材料在所述第一溶剂中的溶解度小于所述第一初始发光材料在所述第一溶剂中的溶解度。
  20. 根据权利要求18或19所述的含有发光材料的溶液，其中，所述第一功能粒子的粒径小于所述第一发光粒子的粒径。
  21. 根据权利要求18～20中任一项所述的含有发光材料的溶液，其中，所述第一功能粒子的粒径为2nm～7nm。
  22. 根据权利要求18～21中任一项所述的含有发光材料的溶液，其中，所述含有发光材料的溶液还包括第三配体，所述第三配体与所述第一功能粒子结合，所述第三配体在所述第一溶剂中的溶解度小于所述第一光敏配体在所述第一溶剂中的溶解度。
  23. 根据权利要求22所述的含有发光材料的溶液，其中，所述第三配体的链长小于所述第一光敏配体的链长。
  24. 根据权利要求18～23中任一项所述的含有发光材料的溶液，其中，在所述第一功能粒子上，所述第二光敏配体占所述第二光敏配体和所述第三配体之和的比例为1/2～2/3。
  25. 根据权利要求18～24中任一项所述的含有发光材料的溶液，其中，所述第一发光粒子为CdS、CdSe、InP、ZnSe、PbS、CsPbCl 3、CsPbBr 3、CsPhI 3、CdS/ZnS、CdSe/ZnS、PbS/ZnS、InP/ZnS、CsPbCl 3/ZnS、CsPbBr 3/ZnS或CsPhI 3/ZnS。
  26. 据权利要求18～25中任一项所述的含有发光材料的溶液，其中，所 述第一功能粒子为N型半导体、P型半导体或绝缘体。
  27. 据权利要求18～26中任一项所述的含有发光材料的溶液，其中，在含有发光材料的溶液中，所述第一发光粒子的数量和所述第一功能粒子的数量之比为66/100～80/100。
  28. 一种发光基板的制备方法，包括以下步骤：
    在衬底上形成第一电极；
    在所述第一电极远离所述衬底一侧，形成第一功能层和第一发光图案；其中，所述第一发光图案包括第一发光材料，所述第一发光材料包括第一发光粒子以及与所述第一发光粒子结合的第一配体；所述第一功能层包括第一功能材料，所述第一功能材料包括第一功能粒子以及与所述第一功能粒子结合的第二配体；所述第一配体和所述第二配体的显影特性相同；
    在所述第一发光图案远离所述衬底一侧形成第二电极；所述第一电极、所述第一功能层、所述第一发光图案和所述第二电极构成第一发光器件。
  29. 根据权利要求28所述的发光基板的制备方法，
    在所述第一电极远离所述衬底一侧，形成第一功能层和第一发光图案包括：
    在所述第一电极远离所述衬底一侧涂覆第一混合溶液，得到第一混合薄膜；其中，所述第一混合溶液包括第一溶剂和溶解在所述第一溶剂中的第一初始发光材料和第一初始功能材料，所述第一初始发光材料包括第一发光粒子以及与所述第一发光粒子结合的第一光敏配体；所述第一初始功能材料包括第一功能粒子以及与所述第一功能粒子结合的第二光敏配体；其中，所述第一光敏配体和所述第二光敏配体的光敏特性相同；所述第一初始功能材料在所述第一溶剂中的迁移速率大于所述第一初始发光材料在所述第一溶剂中的迁移速率；
    对所述第一混合薄膜进行掩膜版曝光和显影，得到第一功能层和第一发光图案。
  30. 根据权利要求28或29所述的发光基板的制备方法，其中，所述第一初始功能材料在所述第一溶剂中的溶解度小于所述第一初始发光材料在所述第一溶剂中的溶解度。
  31. 根据权利要求28或29所述的发光基板的制备方法，其中，
    所述对所述第一混合薄膜进行掩膜版曝光和显影，得到第一功能层和第一发光图案包括：
    对所述第一混合薄膜进行掩膜版曝光，所述第一混合薄膜位于第一区域 内的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体；所述第一区域为所述第一发光器件所在区域；
    采用第一显影液溶解并去除曝光后的所述第一混合薄膜位于所述第一区域之外的部分，得到所述第一功能层和所述第一发光图案；其中，所述第一光敏配体在所述第一显影液中的溶解度大于所述第一光变配体在所述第一显影液中的溶解度；所述第二光敏配体在所述第一显影液中的溶解度大于所述第二光变配体在所述第一显影液中的溶解度。
  32. 根据权利要求28或29所述的发光基板的制备方法，其中，
    所述对所述第一混合薄膜进行掩膜版曝光和显影，得到第一功能层和第一发光图案包括：
    对所述第一混合薄膜进行掩膜版曝光，所述第一混合薄膜位于第一区域之外的第一光敏配体以及第二光敏配体在光辐射下分别生成第一光变配体和第二光变配体；所述第一区域为所述第一发光器件所在区域；
    采用第二显影液溶解并去除曝光后的所述第一混合薄膜位于所述第一区域之外的部分，得到所述第一功能层和所述第一发光图案；其中，所述第一光敏配体在所述第二显影液中的溶解度小于所述第一光变配体在所述第二显影液中的溶解度；所述第二光敏配体在所述第二显影液中的溶解度小于所述第二光变配体在所述第二显影液中的溶解度。
  33. 根据权利要求28～32中任一项所述的发光基板的制备方法，还包括以下步骤：
    在衬底上形成第三电极；
    在所述第三电极远离所述衬底一侧，形成第二功能层和第二发光图案，其中，所述第二发光图案的材料包括第二发光材料，所述第二发光材料包括第二发光粒子以及与所述第二发光粒子结合的第四配体；所述第二功能层的材料第二功能材料，所述第二功能材料包括第二功能粒子以及与所述第二功能粒子结合的第五配体；所述第四配体和所述第五配体的显影特性相同；
    在所述第二发光图案远离所述衬底一侧形成第四电极；所述第三电极、所述第二功能层、所述第二发光图案和所述第四电极构成第二发光器件。
  34. 根据权利要求28～33中任一项所述的发光基板的制备方法，还包括以下步骤：
    在衬底上形成第五电极；
    在所述第五电极远离所述衬底一侧，形成第三功能层和第三发光图案，其中，所述第三发光图案的材料第三发光材料，所述第三发光材料包括第三 发光粒子以及与所述第三发光粒子结合的第七配体；所述第三功能层的材料第三功能材料，所述第三功能材料包括第三功能粒子以及与所述第三功能粒子结合的第八配体；所述第七配体和所述第八配体的显影特性相同；
    在所述第三发光图案远离所述衬底一侧形成第六电极；所述第五电极、所述第三功能层、所述第三发光图案和所述第六电极构成第三发光器件。
  35. 一种发光装置，包括：如权利要求1～17任一项所述的发光基板。
PCT/CN2022/090584 2022-04-29 2022-04-29 发光基板及制备方法、含有发光材料的溶液、发光装置 WO2023206485A1 (zh)

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