Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
  • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
  • C09D133/04—Homopolymers or copolymers of esters
  • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/075—Silicon-containing compounds
  • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/075—Silicon-containing compounds
  • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/094—Multilayer resist systems, e.g. planarising layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70008—Production of exposure light, i.e. light sources
  • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
  • C08K5/00—Use of organic ingredients
  • C08K5/54—Silicon-containing compounds
  • C08K5/541—Silicon-containing compounds containing oxygen
  • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
  • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
  • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
  • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
  • H10P76/2041—Photolithographic processes

Definitions

• the present invention relates to a method for manufacturing a semiconductor substrate and a silicon-containing composition.
• etching is performed using a resist pattern obtained by exposing and developing a resist film laminated on the substrate via an organic underlayer film, a silicon-containing film, etc. as a mask.
• a multilayer resist process or the like that forms a patterned substrate is used (see International Publication No. 2012/039337).
• silicon-containing films are required to have uniform thickness as well as the ability to suppress collapse of resist patterns. ing.
• An object of the present invention is to provide a method for manufacturing a semiconductor substrate and a silicon-containing composition that can form a silicon-containing film that has good resist pattern collapse prevention properties and good film thickness uniformity.
• the present invention provides: Coating a silicon-containing composition directly or indirectly on the substrate; Coating a resist film forming composition on the silicon-containing film formed by the silicon-containing composition coating step; a step of exposing the resist film formed by the resist film forming composition coating step to radiation; At least a step of developing the exposed resist film,
• the silicon-containing composition described above is A silicon-containing compound (hereinafter also referred to as "[A] compound”), A polymer having a structural unit represented by the following formula (1) (hereinafter also referred to as "[B] polymer”), Contains a solvent (hereinafter also referred to as "[C] solvent”) and
• the present invention relates to a method for manufacturing a semiconductor substrate, wherein the content of the silicon-containing compound in the silicon-containing composition other than the solvent is 50% by mass or more and 99.9% by mass or less.
• R A1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
• R A2 is a monovalent organic group
• organic group refers to a group containing at least one carbon atom
• carbon number refers to the number of carbon atoms constituting the group
• the present invention provides: A silicon-containing composition for forming a resist underlayer film, comprising:
• the silicon-containing composition described above is a silicon-containing compound;
• a polymer having a structural unit represented by the following formula (1) contains a solvent and
• the present invention relates to a silicon-containing composition in which the content of the silicon-containing compound in components other than the solvent is 50% by mass or more and 99.9% by mass or less.
• R A1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
• R A2 is a monovalent organic group having 1 to 20 carbon atoms.
• the method for manufacturing a semiconductor substrate forms a silicon-containing film that is excellent in both resist pattern collapse suppression and film thickness uniformity, so a high-quality semiconductor substrate can be efficiently manufactured.
• the silicon-containing composition can form a silicon-containing film that is excellent in both resist pattern collapse prevention and film thickness uniformity. Therefore, these can be suitably used in the production of semiconductor devices, which are expected to be further miniaturized in the future.
• the method for manufacturing a semiconductor substrate according to the present embodiment includes a step of directly or indirectly applying a silicon-containing composition to a substrate (hereinafter also referred to as “coating step (I)”), and a step of applying the silicon-containing composition to the substrate.
• a step of applying a composition for forming a resist film to the silicon-containing film formed in the process (hereinafter also referred to as “coating step (II)"), and a step of applying the composition for forming a resist film described above.
• the method includes a step of exposing the exposed resist film to radiation (hereinafter also referred to as "exposure step”), and a step of developing at least the exposed resist film (hereinafter also referred to as "developing step”).
• the method for manufacturing a semiconductor substrate includes a step of forming an organic underlayer film directly or indirectly on the substrate (hereinafter also referred to as "organic underlayer film forming step"), if necessary, before the coating step (I). ) may further be included.
• a step of etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing film pattern (hereinafter also referred to as "silicon-containing film pattern forming step"), a step of etching the silicon-containing film pattern using the resist pattern as a mask,
• the method may further include a step of etching using a mask (hereinafter referred to as "etching step”) and a step of removing the silicon-containing film pattern using a basic liquid (hereinafter referred to as "removal step").
• the silicon-containing composition is suitable for forming a resist underlayer film, and contains a [A] compound, a [B] polymer, and a [B] solvent.
• the silicon-containing composition may contain other optional components within a range that does not impair the effects of the present invention.
• the compound is a compound containing a silicon atom.
• the compound [A] is not particularly limited as long as it contains a silicon atom, but is preferably at least one of polysiloxane and polycarbosilane.
• the silicon-containing composition may contain one or more kinds of [A] compounds.
• the [A] compound when the [A] compound is a polysiloxane, the [A] compound preferably has a structural unit represented by the following formula (2-1) (hereinafter also referred to as "structural unit (2-1)").
• structural unit (2-1) structural unit represented by the following formula (2-1)
• the compound may have one or more types of structural unit (2-1).
• R 12 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom.
• e is an integer of 0 to 3. (In this case, multiple R 12s are the same or different.)
• the monovalent organic group having 1 to 20 carbon atoms represented by R 12 includes, for example, a monovalent hydrocarbon group having 1 to 20 carbon atoms; A group containing a divalent heteroatom-containing linking group between the carbon-carbon bonds of the hydrocarbon group or at the end of the hydrocarbon group (hereinafter also referred to as "group ( ⁇ )"), A group in which some or all of the hydrogen atoms of the above hydrocarbon group or the above group ( ⁇ ) are substituted with a monovalent heteroatom-containing substituent (hereinafter also referred to as "group ( ⁇ )"), A group that combines the above hydrocarbon group, the above group ( ⁇ ), or the above group ( ⁇ ) with a divalent heteroatom-containing linking group (hereinafter also referred to as "group ( ⁇ )”). etc.
• hydrocarbon group includes a chain hydrocarbon group, an alicyclic hydrocarbon group, and an aromatic hydrocarbon group.
• This "hydrocarbon group” may be a saturated hydrocarbon group or an unsaturated hydrocarbon group.
• chain hydrocarbon group refers to a hydrocarbon group that does not contain a cyclic structure and is composed only of a chain structure, and includes both linear hydrocarbon groups and branched hydrocarbon groups.
• Alicyclic hydrocarbon group refers to a hydrocarbon group that contains only an alicyclic structure as a ring structure and does not contain an aromatic ring structure, and includes a monocyclic alicyclic hydrocarbon group and a polycyclic alicyclic hydrocarbon group. Contains both hydrocarbon groups.
• Aromatic hydrocarbon group refers to a hydrocarbon group containing an aromatic ring structure as a ring structure. However, it does not need to be composed only of an aromatic ring structure, and may include a chain structure or an alicyclic structure as a part thereof.
• Examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms include a monovalent chain hydrocarbon group having 1 to 20 carbon atoms, a monovalent alicyclic hydrocarbon group having 3 to 20 carbon atoms, and 6 carbon atoms. ⁇ 20 monovalent aromatic hydrocarbon groups are mentioned.
• Examples of monovalent chain hydrocarbon groups having 1 to 20 carbon atoms include methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, sec-butyl group, iso-butyl group, tert Examples include alkyl groups such as -butyl, alkenyl groups such as ethenyl, propenyl and butenyl, and alkynyl groups such as ethynyl, propynyl and butynyl.
• Examples of monovalent alicyclic hydrocarbon groups having 3 to 20 carbon atoms include monocyclic saturated alicyclic hydrocarbon groups such as cyclopentyl group and cyclohexyl group, norbornyl group, adamantyl group, tricyclodecyl group, and tetracyclo Polycyclic alicyclic saturated hydrocarbon groups such as dodecyl group, monocyclic alicyclic unsaturated hydrocarbon groups such as cyclopentenyl group, cyclohexenyl group, norbornenyl group, tricyclodecenyl group, tetracyclodode Examples include polycyclic alicyclic unsaturated hydrocarbon groups such as a cenyl group.
• Examples of the monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms include aryl groups such as phenyl group, tolyl group, xylyl group, naphthyl group, and anthryl group, benzyl group, phenethyl group, naphthylmethyl group, and anthrylmethyl group.
• Examples include aralkyl groups such as groups.
• heteroatoms constituting the divalent heteroatom-containing linking group and the monovalent heteroatom-containing substituent include, for example, oxygen atom, nitrogen atom, sulfur atom, phosphorus atom, silicon atom, and halogen atom.
• halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom (in this specification, unless otherwise specified, the term "halogen atom" includes these atoms).
• R' is a hydrogen atom or a monovalent hydrocarbon group.
• Examples of monovalent heteroatom-containing substituents include halogen atoms, hydroxy groups, carboxy groups, cyano groups, amino groups, and sulfanyl groups.
• R12 is a substituted or unsubstituted monovalent alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. It is preferable that
• the monovalent alkoxy group having 1 to 20 carbon atoms include alkoxy groups such as methoxy group, ethoxy group, n-propyloxy group, and isopropoxy group.
• aryl group having 6 to 20 carbon atoms examples include a phenyl group, a naphthyl group, an anthracenyl group, and the like.
• alkyl group having 1 to 10 carbon atoms examples include methyl group, ethyl, n-propyl group, i-propyl group, n-butyl group, i-butyl group, t-butyl group, and the like.
• substituents for the aryl group include an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkoxycarbonyloxy group, an acyl group, an acyloxy group, and groups in which the hydrogen atom of these groups is replaced with a halogen atom.
• e is preferably an integer of 0 to 2, more preferably 0 or 1.
• Polysiloxane as a compound has a structural unit (2-1) in which e in the above formula (2-1) is 0 (hereinafter also referred to as “structural unit (2-1-e0)"). ) and a structural unit in which e is 1 (hereinafter also referred to as “structural unit (2-1-e1)").
• the structural unit (2-1) is, for example, a structural unit derived from a compound represented by the following formulas (2-1-1) to (2-1-12) (hereinafter referred to as "structural unit (2-1-1)"). ) to structural unit (2-1-12).).
• the lower limit of the content ratio of the structural unit (2-1-e0) in all the structural units constituting the polysiloxane is preferably 30 mol%, and 40 mol%. More preferably mol %, and even more preferably 45 mol %.
• the upper limit of the content of the structural unit (2-1-e0) may be 100 mol%, preferably 96 mol%, and more preferably 92 mol%.
• the lower limit of the content of the structural unit (2-1-e1) in all the structural units constituting the polysiloxane is preferably 1 mol%, and 5 More preferably mol%, and even more preferably 8 mol%.
• the upper limit of the content of the structural unit (2-1-e1) is preferably 80 mol%, more preferably 70 mol%, and even more preferably 60 mol%.
• polycarbosilane When the compound is a polycarbosilane, it preferably has a structural unit represented by the following formula (3-1) (hereinafter also referred to as "structural unit (3-1)"). [A] The compound may have one or more types of structural unit (3-1).
• R 31 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a hydrogen atom, or a halogen atom.
• h is 1 or 2. When h is 2 , two R 31s are the same or different from each other.
• R 32 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms.
• q is an integer of 1 to 3 (If q is 2 or more, multiple R32s are the same or different. However, h+q is 4 or less.)
• a monovalent organic group having 1 to 20 carbon atoms represented by R 12 in the above formula (2-1) is preferably employed. be able to.
• R31 is a hydrogen atom, a monovalent chain hydrocarbon group, a monovalent aromatic hydrocarbon group, or a monovalent heteroatom-containing group in which some or all of the hydrogen atoms of the monovalent hydrocarbon group are replaced by a monovalent heteroatom-containing group.
• a substituted monovalent group is preferable, a hydrogen atom, an alkyl group, or an aryl group is more preferable, and a hydrogen atom, a methyl group, an ethyl group, or a phenyl group is even more preferable.
• the substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms bonded to two silicon atoms represented by R 32 is, for example, a substituted or unsubstituted divalent chain having 1 to 20 carbon atoms.
• Examples include a hydrocarbon group, a substituted or unsubstituted divalent aliphatic cyclic hydrocarbon group having 3 to 20 carbon atoms, a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms, and the like.
• unsubstituted divalent chain hydrocarbon groups having 1 to 20 carbon atoms examples include chain saturated hydrocarbon groups such as methanediyl group and ethanediyl group, and chain unsaturated hydrocarbon groups such as ethendiyl group and propendiyl group. can be mentioned.
• Examples of the unsubstituted divalent aliphatic cyclic hydrocarbon group having 3 to 20 carbon atoms include a monocyclic saturated hydrocarbon group such as a cyclobutanediyl group, a monocyclic unsaturated hydrocarbon group such as a cyclobutenediyl group, Examples include polycyclic saturated hydrocarbon groups such as a bicyclo[2.2.1]heptanediyl group, and polycyclic unsaturated hydrocarbon groups such as a bicyclo[2.2.1]heptenediyl group.
• Examples of the unsubstituted divalent aromatic hydrocarbon group having 6 to 20 carbon atoms include a phenylene group, a biphenylene group, a phenyleneethylene group, and a naphthylene group.
• Examples of the substituent in the substituted divalent hydrocarbon group having 1 to 20 carbon atoms represented by R 32 include a halogen atom, a hydroxy group, a cyano group, a nitro group, an alkoxy group, an acyl group, an acyloxy group, etc. It will be done.
• R 32 is preferably an unsubstituted chain saturated hydrocarbon group or an unsubstituted aromatic hydrocarbon group, and more preferably a methanediyl group, ethanediyl group, or phenylene group.
• h is preferably 1.
• q is preferably 2 or 3.
• Polycarbosilane as a compound has a structural unit (3-1) in which R 31 of the above formula (3-1) is a hydrogen atom (hereinafter referred to as “structural unit (3-1-a)"). ), and R 31 is a monovalent chain hydrocarbon group, a monovalent aromatic hydrocarbon group, or a monovalent aromatic hydrocarbon group, or a monovalent hetero atom containing some or all of the hydrogen atoms of the monovalent hydrocarbon group. It is preferable to have a structural unit that is a monovalent group substituted with a group (hereinafter also referred to as "structural unit (3-1-b)”) in combination.
• Examples of the structural unit (3-1) include compounds represented by the following formula (3-1-1) and compounds represented by the following formulas (3-1-2) to (3-1-6). Examples include structural units derived from a combination with one or more types.
• X 1 and X 2 are each independently a halogen atom.
• h is an integer from 1 to 5.
• the lower limit of the content of the structural unit (3-1-a) in all the structural units constituting the polycarbosilane is preferably 10 mol%. , 15 mol% is more preferable, and 20 mol% is even more preferable. Further, the upper limit of the content of the structural unit (3-1-a) may be 70 mol%, preferably 60 mol%, and more preferably 50 mol%.
• the lower limit of the content of the structural unit (3-1-b) in all structural units constituting the polycarbosilane is preferably 5 mol%. , 8 mol% is more preferable, and 12 mol% is even more preferable. Furthermore, the upper limit of the content of the structural unit (3-1-b) is preferably 50 mol%, more preferably 40 mol%, and even more preferably 30 mol%.
• the lower limit of the content ratio of the compound is preferably 0.05% by mass, more preferably 0.1% by mass, and even more preferably 0.3% by mass, based on all the components of the silicon-containing composition. 0.6% by mass is particularly preferred.
• the upper limit of the content ratio is preferably 10% by mass, more preferably 8% by mass, even more preferably 5% by mass, and particularly preferably 3% by mass.
• the compound is preferably in the form of a polymer.
• a "polymer” refers to a compound having two or more structural units, and when two or more of the same structural unit are consecutive in a polymer, this structural unit is also referred to as a "structural unit.”
• the lower limit of the polystyrene equivalent weight average molecular weight (Mw) of the [A] compound measured by gel permeation chromatography (GPC) is preferably 800, more preferably 1,000. , 1,300 are more preferred, and 1,500 is particularly preferred.
• the upper limit of Mw is preferably 10,000, more preferably 8,000, even more preferably 6,000, and particularly preferably 4,000.
• the method for measuring the Mw of the compound is as described in the Examples.
• Hydrolytic condensation is preferably carried out by hydrolytic condensation in a solvent such as diisopropyl ether in the presence of a catalyst such as oxalic acid and water. This can be carried out by purification through solvent substitution or the like in the presence of a dehydrating agent. It is thought that each hydrolyzable silane monomer is incorporated into the [A] compound regardless of its type through a hydrolytic condensation reaction, etc., and the structural unit (2-1) and structural unit (3) in the synthesized [A] compound. -1) and other structural units are usually equivalent to the proportions of the amounts of each monomer compound used in the synthesis reaction.
• the polymer has a structural unit represented by the following formula (1).
• R A1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
• R A2 is a monovalent organic group having 1 to 20 carbon atoms.
• the monovalent organic group having 1 to 20 carbon atoms represented by R A1 and R A2 As the monovalent organic group having 1 to 20 carbon atoms represented by R A1 and R A2 , the monovalent organic group having 1 to 20 carbon atoms represented by R 12 in the above formula (2-1) is preferable. can be adopted. Preferably, R A1 and R A2 are different from each other.
• the polymer is a structural unit represented by the following formula (1-1) (hereinafter also referred to as "structural unit (1-1)”) and a structural unit represented by the following formula (1-2). (However, this excludes the case where the structural unit is represented by the following formula (1-1) (hereinafter also referred to as “structural unit (1-2)”)). is preferred.
• the polymer may each have one or more types of structural unit (1-1) and structural unit (1-2).
• R 1 is a hydrogen atom or a substituted or unsubstituted monovalent organic group having 1 to 20 carbon atoms.
• R 2 is a monovalent organic group having 1 to 20 carbon atoms.
• R 3 is a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
• L is a single bond or a divalent linking group.
• Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring members.
• R 4 is a monovalent organic group having 1 to 20 carbon atoms or a hydroxy group; (n is an integer from 0 to 8. If n is 2 or more, multiple R 4s are the same or different.)
• the monovalent organic group having 1 to 20 carbon atoms represented by R 1 and R 2 is the monovalent organic group having 1 to 20 carbon atoms represented by R 12 in the above formula (2-1).
• 20 monovalent organic groups can be suitably employed.
• R 2 is a monovalent organic group having 4 to 20 carbon atoms
• R 1 is preferably a hydrogen atom or a methyl group.
• R 2 is a monovalent organic group having 1 to 3 carbon atoms
• R 1 is a carbonyl group, an oxygen atom (-O-), or an imino group (-NH-) between carbon atoms of a monovalent hydrocarbon group. ) or a combination thereof is preferred.
• the hydrogen atoms of the monovalent hydrocarbon group in R 1 be substituted with at least one of a halogen atom and a hydroxy group.
• the halogen atom as a substituent for R 1 is preferably a fluorine atom.
• the monovalent organic group having 1 to 20 carbon atoms represented by R 2 is preferably a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms.
• the substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms the group shown as the monovalent hydrocarbon group having 1 to 20 carbon atoms in R 12 of the above formula (2-1) is preferably used.
• R 2 is preferably a monovalent chain hydrocarbon group having 1 to 15 carbon atoms or an alicyclic hydrocarbon group having 3 to 12 carbon atoms.
• R 2 is an alicyclic hydrocarbon group having 3 to 12 carbon atoms
• the carbon atom bonded to the oxygen atom in the above formula (1-1) is a monovalent chain hydrocarbon group having 1 to 5 carbon atoms.
• the groups are bonded.
• R 2 has a substituent
• suitable examples of the substituent include the substituents shown when R 12 in formula (1) above is a substituted or unsubstituted aryl group having 6 to 20 carbon atoms.
• structural unit (1-1) include structural units represented by the following formulas (1-1-1) to (1-1-28).
• R 3 is a hydrogen atom or a methyl group
• R 4 is a monovalent hydrocarbon group having 1 to 3 carbon atoms.
• the polymer may be a homopolymer having only the structural unit (1-1). In this case, the content of the structural unit (1-1) is 100 mol%.
• the polymer is a copolymer having structural unit (1-1) and other structural units
• the content of structural unit (1-1) in all the structural units constituting the polymer is preferably 5 mol%, more preferably 10 mol%, and even more preferably 12 mol%.
• the upper limit of the content is preferably 80 mol%, more preferably 70 mol%, and even more preferably 60 mol%.
• R 3 is substituted or unsubstituted in R 2 of the above formula (1-1).
• the groups shown as monovalent hydrocarbon groups having 1 to 20 carbon atoms can be suitably employed.
• R 3 is preferably a hydrogen atom or a methyl group from the viewpoint of copolymerizability of the monomer providing the structural unit (1-2).
• the divalent linking group represented by L is, for example, a divalent hydrocarbon group having 1 to 10 carbon atoms, -COO-, -CO-, -O-, -CONH - or a combination thereof.
• L is a single bond, an alkanediyl group obtained by removing one hydrogen atom from an alkyl group having 1 to 10 carbon atoms, a cycloalkylene group obtained by removing one hydrogen atom from a cycloalkyl group having 5 to 10 carbon atoms, A carbonyl group, an oxygen atom, or a combination thereof is preferable, and a single bond, an alkanediyl group having 1 to 5 carbon atoms, a cycloalkylene group having 5 to 7 carbon atoms, a carbonyl group, an oxygen atom, or a combination thereof is more preferable, and a single bond is even more preferable.
• the aromatic ring having 6 to 20 ring members in Ar is, for example, an aromatic hydrocarbon ring such as a benzene ring, a naphthalene ring, an anthracene ring, an indene ring, or a pyrene ring, a pyridine ring, or a pyrazine ring.
• an aromatic heterocycle such as a pyrimidine ring, a pyridazine ring, a triazine ring, or a combination thereof.
• the aromatic ring of Ar above is at least one aromatic hydrocarbon ring selected from the group consisting of a benzene ring, a naphthalene ring, an anthracene ring, a phenalene ring, a phenanthrene ring, a pyrene ring, a fluorene ring, a perylene ring, and a coronene ring. is preferred, and a benzene ring, naphthalene ring or pyrene ring is more preferred.
• the term "number of ring members" refers to the number of atoms constituting a ring, and in the case of a polycycle, the number of atoms constituting the polycycle.
• the biphenyl ring has 12 ring members
• the naphthalene ring has 10 ring members
• the fluorene ring has 13 ring members.
• substituent for Ar examples include the same groups as those exemplified as the substituent for R 2 in formula (1-1) above. However, R 4 described below is not considered a substituent for Ar.
• Ar is preferably a group obtained by removing (n+1) hydrogen atoms from an unsubstituted aromatic ring having 6 to 20 ring members, and a group obtained by removing (n+1) hydrogen atoms from an unsubstituted aromatic hydrocarbon ring having 6 to 20 ring members.
• a group from which a hydrogen atom is removed is more preferred, and a group from which (n+1) hydrogen atoms are removed from an unsubstituted benzene ring is even more preferred.
• R 4 is preferably a monovalent hydrocarbon group having 1 to 20 carbon atoms or a hydroxy group.
• the monovalent hydrocarbon group having 1 to 20 carbon atoms and having a hydroxy group represented by R 4 is shown as the monovalent hydrocarbon group having 1 to 20 carbon atoms in R 2 of the above formula (1-1).
• a group can be suitably employed.
• R 4 is preferably a monovalent hydroxyalkyl group or hydroxy group having 1 to 10 carbon atoms.
• a hydroxyalkyl group is a monovalent alkyl group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms are substituted with a hydroxy group.
• the monovalent hydroxyalkyl group having 1 to 10 carbon atoms represented by R 4 is more preferably a monovalent monohydroxyalkyl group having 1 to 10 carbon atoms, and even more preferably a monohydroxymethyl group.
• R 4 is preferably a monovalent monohydroxyalkyl group having 1 to 5 carbon atoms or a hydroxy group, and more preferably a hydroxymethyl group, a hydroxyethyl group, or a hydroxy group.
• n is preferably 1 to 5, more preferably 1 to 3, even more preferably 1 or 2, and particularly preferably 1.
• structural unit (1-2) include structural units represented by the following formulas (1-2-1) to (1-2-10).
• R 5 has the same meaning as in the above formula (1-2).
• the polymer preferably has at least a structural unit (1-2) in which n in the above formula (1-2) is 1.
• the polymer may further have a structural unit (1-2) in which n is 0.
• the content ratio of the structural unit (1-2) to all the structural units constituting the polymer is The lower limit of the total amount (if any species is present) is preferably 10 mol%, more preferably 20 mol%, and even more preferably 30 mol%.
• the upper limit of the content ratio is preferably 95 mol%, more preferably 90 mol%, and even more preferably 85 mol%.
• the polymer has a structural unit (hereinafter also referred to as "structural unit (1-3)") containing at least one type selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure. Good too.
• structural unit (1-3) containing at least one type selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure. Good too.
• the polymer may have one or more structural units (1-3).
• Examples of the structural unit (1-3) include structural units represented by the following formulas (1-3-1) to (1-3-10).
• R L1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group.
• R L2 to R L5 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a cyano group, a trifluoromethyl group, a methoxy group, a methoxycarbonyl group, a hydroxy group, a hydroxymethyl group, or a dimethylamino group.
• R L4 and R L5 may be a divalent alicyclic group having 3 to 8 carbon atoms that is formed together with the carbon atom to which they are bonded.
• L 2 is a single bond or a divalent linking group.
• Y is an oxygen atom or a methylene group.
• k is an integer from 0 to 3.
• m is an integer from 1 to 3.
• the divalent alicyclic group having 3 to 8 carbon atoms formed by combining R L4 and R L5 together with the carbon atoms to which they are bonded is a monocyclic or polycyclic carbonized alicyclic group having the above number of carbon atoms. It is not particularly limited as long as it is a group obtained by removing two hydrogen atoms from the same carbon atoms constituting a hydrogen carbocycle. Either a monocyclic hydrocarbon group or a polycyclic hydrocarbon group may be used, and the polycyclic hydrocarbon group may be a bridged alicyclic hydrocarbon group or a fused alicyclic hydrocarbon group, and a saturated hydrocarbon group may be used. Either a hydrogen group or an unsaturated hydrocarbon group may be used.
• the condensed alicyclic hydrocarbon group refers to a polycyclic alicyclic hydrocarbon group in which a plurality of alicyclic rings share a side (a bond between two adjacent carbon atoms).
• One or more hydrogen atoms on this alicyclic group may be substituted with a hydroxy group.
• the divalent linking group represented by L 5 above is, for example, a divalent linear or branched hydrocarbon group having 1 to 10 carbon atoms, or a divalent alicyclic carbonized group having 4 to 12 carbon atoms.
• Examples include a hydrogen group, or a group composed of one or more of these hydrocarbon groups and at least one group selected from -CO-, -O-, -NH-, and -S-.
• a structural unit containing a lactone structure is preferable, a structural unit containing a norbornane lactone structure is more preferable, and a structural unit derived from norbornane lactone-yl(meth)acrylate is further preferable. preferable.
• the content ratio of the structural unit (1-3) to all the structural units constituting the polymer is The lower limit of the total amount (if any species is present) is preferably 30 mol%, more preferably 40 mol%, and even more preferably 45 mol%.
• the upper limit of the content ratio is preferably 80 mol%, more preferably 70 mol%, and even more preferably 65 mol%.
• the lower limit of the weight average molecular weight of the polymer is preferably 500, more preferably 1000, even more preferably 1500, and particularly preferably 2000.
• the upper limit of the molecular weight is preferably 20,000, more preferably 18,000, even more preferably 15,000, and particularly preferably 12,000. Note that the method for measuring the weight average molecular weight is as described in Examples.
• the lower limit of the content of the [B] polymer with respect to 1.0 parts by mass of the [A] compound is preferably 0.00001 parts by mass, more preferably 0.0001 parts by mass, even more preferably 0.0005 parts by mass, and 0.00001 parts by mass, more preferably 0.0005 parts by mass, and .001 part by weight is particularly preferred.
• the upper limit of the content is preferably 5.0 parts by mass, more preferably 1.0 parts by mass, even more preferably 0.1 parts by mass, and particularly preferably 0.05 parts by mass.
• the polymer can be synthesized by performing addition polymerization such as radical polymerization or ionic polymerization depending on the type of monomer.
• addition polymerization such as radical polymerization or ionic polymerization depending on the type of monomer.
• the [A] polymer when synthesized by radical polymerization, it can be synthesized by polymerizing monomers providing each structural unit in an appropriate solvent using a radical polymerization initiator or the like.
• radical polymerization initiator examples include azobisisobutyronitrile (AIBN), 2,2'-azobis(4-methoxy-2,4-dimethylvaleronitrile), and 2,2'-azobis(2-cyclopropylpropylene).
• azo radical initiators such as 2,2'-azobis(2,4-dimethylvaleronitrile), dimethyl 2,2'-azobis(isobutyrate); benzoyl peroxide, t-butyl hydroperoxide, Examples include peroxide-based radical initiators such as cumene hydroperoxide. These radical initiators can be used alone or in combination of two or more.
• the solvent used in the above polymerization the below-mentioned [C] solvent can be suitably employed.
• the solvents used in these polymerizations may be used alone or in combination of two or more.
• the reaction temperature in the above polymerization is usually 40°C to 150°C, preferably 50°C to 120°C.
• the reaction time is usually 1 hour to 48 hours, preferably 1 hour to 24 hours.
• solvent examples include alcohol solvents, ketone solvents, ether solvents, ester solvents, nitrogen-containing solvents, and water.
• Solvents can be used alone or in combination of two or more.
• alcoholic solvents include monoalcoholic solvents such as methanol, ethanol, n-propanol, iso-propanol, n-butanol, and iso-butanol, ethylene glycol, 1,2-propylene glycol, diethylene glycol, and dipropylene glycol.
• monoalcoholic solvents such as methanol, ethanol, n-propanol, iso-propanol, n-butanol, and iso-butanol, ethylene glycol, 1,2-propylene glycol, diethylene glycol, and dipropylene glycol.
• polyhydric alcohol solvents examples include polyhydric alcohol solvents.
• ketone solvents include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-iso-butyl ketone, and cyclohexanone.
• ether solvents include ethyl ether, iso-propyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, Examples include tetrahydrofuran.
• ester solvents include ethyl acetate, ⁇ -butyrolactone, n-butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl acetate, propylene glycol monomethyl ether acetate, and acetic acid.
• ester solvents include propylene glycol monoethyl ether, dipropylene glycol monomethyl acetate, dipropylene glycol monoethyl acetate, ethyl propionate, n-butyl propionate, methyl lactate, and ethyl lactate.
• nitrogen-containing solvents examples include N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
• ether solvents, ester solvents, or water are preferable, and ether solvents, ester solvents, or water having a glycol structure are more preferable because they have excellent film-forming properties.
• ether solvents and ester solvents having a glycol structure examples include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl acetate.
• examples include ether. Among these, propylene glycol monomethyl ether acetate or propylene glycol monoethyl ether is preferred.
• the content of the ether solvent and ester solvent having a glycol structure in the solvent is preferably 20% by mass or more, more preferably 60% by mass or more, even more preferably 90% by mass or more, and 100% by mass. Particularly preferred.
• the lower limit of the content of the [C] solvent in the silicon-containing composition is preferably 80% by mass, more preferably 85% by mass, even more preferably 90% by mass, and particularly preferably 95% by mass.
• the upper limit of the content ratio is preferably 99.9% by mass, more preferably 99% by mass.
• optional ingredients examples include acid generators, basic compounds (including base generators), orthoesters, radical generators, surfactants, colloidal silica, colloidal alumina, and organic polymers.
• acid generators basic compounds (including base generators), orthoesters, radical generators, surfactants, colloidal silica, colloidal alumina, and organic polymers.
• Other optional components can be used alone or in combination of two or more.
• the acid generator is a component that generates acid upon exposure to light or heating.
• the silicon-containing composition contains an acid generator, the condensation reaction of the [A] compound can be promoted even at relatively low temperatures (including room temperature).
• photoacid generators examples include the acid generators described in paragraphs [0077] to [0081] of JP-A No. 2004-168748, triphenyl Examples include sulfonium trifluoromethanesulfonate.
• thermal acid generators examples include onium salt acid generators exemplified as photoacid generators in the above patent documents, and 2,4,4 , 6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl sulfonates, and the like.
• the lower limit of the content of the acid generator is preferably 0.001 parts by mass, and 0.01 parts by mass based on 100 parts by mass of the [A] compound. More preferred.
• the upper limit of the content of the acid generator is preferably 5 parts by mass, more preferably 1 part by mass, based on 100 parts by mass of the [A] compound.
• the basic compound accelerates the curing reaction of the silicon-containing composition, and as a result improves the strength etc. of the formed film. Furthermore, the basic compound improves the removability of the film with an acidic liquid.
• the basic compound include a compound having a basic amino group, and a base generator that generates a compound having a basic amino group by the action of an acid or heat.
• the compound having a basic amino group include amine compounds.
• the base generator include amide group-containing compounds, urea compounds, nitrogen-containing heterocyclic compounds, and the like. Specific examples of amine compounds, amide group-containing compounds, urea compounds, and nitrogen-containing heterocyclic compounds include compounds described in paragraphs [0079] to [0082] of JP-A-2016-27370.
• the lower limit of the content of the basic compound is preferably 0.001 parts by mass, more preferably 0.01 parts by mass, based on 100 parts by mass of the [A] compound. preferable.
• the upper limit of the content is preferably 5 parts by mass, more preferably 1 part by mass.
• Orthoester is an ester of orthocarboxylic acid. Orthoesters react with water to give carboxylic acid esters and the like. Examples of orthoesters include orthoformates such as methyl orthoformate, ethyl orthoformate, and propyl orthoformate; orthoacetates such as methyl orthoacetate, ethyl orthoacetate, and propyl orthoacetate; methyl orthopropionate; ethyl orthopropionate; Examples include orthopropionate esters such as propyl orthopropionate. Among these, orthoformate is preferred, and trimethyl orthoformate is more preferred.
• the lower limit of the orthoester content is preferably 0.1 part by mass, and 0.5 part by mass based on 1.0 part by mass of the [A] compound. More preferably, 1 part by mass is even more preferred.
• the upper limit of the content is preferably 10 parts by mass, more preferably 6 parts by mass, and even more preferably 4 parts by mass.
• the method for preparing the silicon-containing composition is not particularly limited, but for example, a solution of [A] the compound, [B] the polymer, and [C] the solvent, and other optional components used as necessary, are prepared in a predetermined manner. It can be prepared by mixing at a ratio of 0.2 ⁇ m or less and preferably filtering the resulting mixed solution through a filter having a pore size of 0.2 ⁇ m or less.
• an organic underlayer film is formed directly or indirectly on the substrate before the silicon-containing film forming step.
• This step is an optional step. Through this step, an organic underlayer film is formed directly or indirectly on the substrate.
• the organic underlayer film can be formed by coating an organic underlayer film forming composition.
• an organic underlayer film forming composition for example, the organic underlayer film-forming composition is directly or indirectly applied to a substrate, and the coated film formed is heated or exposed. Examples include a method of curing, etc. by performing.
• the composition for forming the organic underlayer film for example, "HM8006" manufactured by JSR Corporation can be used. Conditions for heating and exposure can be appropriately determined depending on the type of organic underlayer film-forming composition used.
• An example of a case where the organic lower layer film is indirectly formed on the substrate is a case where the organic lower layer film is formed on a low dielectric insulating film formed on the substrate.
• a silicon-containing composition is applied directly or indirectly to the substrate.
• a coating film of the above composition is formed directly or indirectly on the substrate, and this coating film is usually heated and cured to form a silicon-containing film as a resist underlayer film. .
• the substrate examples include insulating films such as silicon oxide, silicon nitride, silicon oxynitride, and polysiloxane, and resin substrates. Further, the substrate may be a substrate patterned with wiring grooves (trenches), plug grooves (vias), and the like.
• the method for applying the silicon-containing composition is not particularly limited, and examples thereof include a spin coating method and the like.
• cases where the silicon-containing composition is indirectly applied to the substrate include cases where the silicon-containing composition is applied onto another film formed on the substrate.
• Other films formed on the substrate include, for example, an organic underlayer film formed by the above-described organic underlayer film forming step, an antireflection film, a low dielectric insulating film, and the like.
• the atmosphere is not particularly limited, and examples thereof include air, nitrogen atmosphere, and the like.
• the coating film is heated in the atmosphere.
• Conditions such as heating temperature and heating time when heating the coating film can be determined as appropriate.
• the lower limit of the heating temperature is preferably 90°C, more preferably 150°C, and even more preferably 200°C.
• the upper limit of the heating temperature is preferably 550°C, more preferably 450°C, and even more preferably 300°C.
• the lower limit of the heating time is preferably 15 seconds, more preferably 30 seconds.
• the upper limit of the heating time is preferably 1,200 seconds, more preferably 600 seconds.
• the formation of a silicon-containing film can be promoted by combining heating and exposure.
• the radiation used for exposure include radiation similar to the radiation exemplified in the exposure step described later.
• the lower limit of the average thickness of the silicon-containing film formed by this step is preferably 1 nm, more preferably 3 nm, and even more preferably 5 nm.
• the upper limit of the average thickness is preferably 500 nm, more preferably 300 nm, and even more preferably 200 nm.
• the method for measuring the average thickness of the silicon-containing film is as described in Examples.
• the method for applying the composition for forming a resist film is not particularly limited, and examples thereof include a spin coating method and the like.
• the composition for forming a resist film is coated by pre-baking (hereinafter also referred to as "PB").
• PB pre-baking
• a resist film is formed by volatilizing the solvent in the coating film.
• the PB temperature and PB time can be appropriately determined depending on the type of resist film forming composition used.
• the lower limit of the PB temperature is preferably 30°C, more preferably 50°C.
• the upper limit of the PB temperature is preferably 200°C, more preferably 150°C.
• the lower limit of the PB time is preferably 10 seconds, more preferably 30 seconds.
• the upper limit of the PB time is preferably 600 seconds, more preferably 300 seconds.
• Such a composition for forming a resist film contains, for example, a resin having an acid-dissociable group or a radiation-sensitive acid generator, and is suitable for exposure with ArF excimer laser light (for ArF exposure) or exposure with extreme ultraviolet rays.
• a positive type resist film forming composition for use (for EUV exposure) is preferable.
• the resist film formed in the resist film forming composition coating step is exposed to radiation.
• This step causes a difference in solubility in an alkaline solution, which is a developer, between exposed and unexposed areas of the resist film. More specifically, the solubility of the exposed portion of the resist film in the alkaline solution increases.
• the radiation used for exposure can be appropriately selected depending on the type of resist film forming composition used.
• Examples include electromagnetic waves such as visible light, ultraviolet rays, deep ultraviolet rays, X-rays, and ⁇ -rays, and particle beams such as electron beams, molecular beams, and ion beams.
• KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193 nm), F2 excimer laser light (wavelength 157 nm), Kr2 excimer laser light (wavelength 147 nm), ArKr excimer laser light Light (wavelength: 134 nm) or extreme ultraviolet light (wavelength: 13.5 nm, etc., also referred to as "EUV”) is more preferred, and ArF excimer laser light or EUV is even more preferred. Further, the exposure conditions can be determined as appropriate depending on the type of resist film forming composition used.
• PEB post-exposure bake
• the PEB temperature and PEB time can be appropriately determined depending on the type of resist film forming composition used.
• the lower limit of the PEB temperature is preferably 50°C, more preferably 70°C.
• the upper limit of the PEB temperature is preferably 200°C, more preferably 150°C.
• the lower limit of the PEB time is preferably 10 seconds, more preferably 30 seconds.
• the upper limit of the PEB time is preferably 600 seconds, more preferably 300 seconds.
• the development of the exposed resist film is preferably alkaline development. Due to the above exposure process, there is a difference in the solubility in the alkaline solution, which is the developer, between the exposed and unexposed areas of the resist film, so performing alkaline development increases the solubility in the alkaline solution. A resist pattern is formed by removing the relatively highly exposed areas.
• the developer used in alkaline development is not particularly limited, and any known developer can be used.
• Examples of developing solutions for alkaline development include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, and triethylamine.
• TMAH tetramethylammonium hydroxide
• pyrrole pyrrole
• piperidine choline
• 1,8-diazabicyclo-[5.4.0]-7-undecene 1,5-diazabicyclo
• Examples include an alkaline aqueous solution in which at least one alkaline compound such as -[4.3.0]-5-nonene is dissolved.
• a TMAH aqueous solution is preferred, and a 2.38% by mass TMAH aqueous solution is more preferred.
• washing and/or drying may be performed after the development.
• Silicon-containing film pattern formation process In this step, the silicon-containing film is etched using the resist pattern as a mask to form a silicon-containing film pattern.
• the above etching may be dry etching or wet etching, but dry etching is preferable.
• Dry etching can be performed using, for example, a known dry etching device.
• the etching gas used for dry etching can be appropriately selected depending on the elemental composition of the silicon-containing film to be etched, and may be selected from, for example, CHF 3 , CF 4 , C 2 F 6 , C 3 F 8 , SF 6 , etc.
• Fluorine gas chlorine gas such as Cl2 , BCl3 , oxygen gas such as O2 , O3 , H2O , H2, NH3 , CO, CO2 , CH4 , C2H2 , C 2 Reducing gas such as H 4 , C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HF, HI, HBr, HCl, NO, etc., Inert gas such as He, N 2 , Ar, etc. etc. are used. These gases can also be used in combination.
• a fluorine-based gas is normally used, and a mixture of the fluorine-based gas and an oxygen-based gas and an inert gas is preferably used.
• etching is performed using the silicon-containing film pattern as a mask. More specifically, etching is performed one or more times using the pattern formed on the silicon-containing film obtained in the silicon-containing film pattern forming step as a mask to obtain a patterned substrate.
• a pattern of the organic underlayer film is formed by etching the organic underlayer film using the silicon-containing film pattern as a mask, and then the substrate is etched using the organic underlayer film pattern as a mask. A pattern is thereby formed on the substrate.
• the above etching may be dry etching or wet etching, but dry etching is preferable.
• Dry etching when forming a pattern on the organic lower layer film can be performed using a known dry etching device.
• the etching gas used in the dry etching can be appropriately selected depending on the elemental composition of the silicon-containing film and the organic underlying film to be etched.
• the etching gas the above-mentioned gases for etching the silicon-containing film can be suitably used, and these gases can also be used as a mixture.
• Oxygen-based gas is usually used for dry etching of an organic underlayer film using a silicon-containing film pattern as a mask.
• Dry etching to form a pattern on the substrate using the organic underlayer film pattern as a mask can be performed using a known dry etching device.
• the etching gas used for dry etching can be appropriately selected depending on the elemental composition of the organic underlayer film and the substrate to be etched, and may be the same as the etching gas exemplified above for dry etching of the organic underlayer film. etching gas, etc. Etching may be performed multiple times using different etching gases. Note that if a silicon-containing film remains on the substrate, the resist lower pattern, or the like after the substrate pattern forming step, the silicon-containing film can be removed by performing the removal step described below.
• the silicon-containing film pattern is removed using a basic liquid.
• the silicon-containing film is removed from the substrate. Furthermore, silicon-containing film residue after etching can be removed.
• the basic liquid is not particularly limited as long as it is a basic solution containing a basic compound.
• basic compounds include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine.
• ammonia is preferred from the viewpoint of avoiding damage to the substrate.
• the basic liquid is preferably a liquid containing a basic compound and water, or a liquid containing a basic compound, hydrogen peroxide, and water from the viewpoint of further improving the removability of the silicon-containing film.
• the method for removing the silicon-containing film is not particularly limited as long as it is a method that allows the silicon-containing film to come into contact with a basic liquid; for example, a method of immersing the substrate in a basic liquid, a method of spraying a basic liquid , a method of applying a basic liquid, and the like.
• Conditions such as temperature and time for removing the silicon-containing film are not particularly limited, and can be appropriately determined depending on the thickness of the silicon-containing film, the type of basic liquid used, etc.
• the lower limit of the temperature is preferably 20°C, more preferably 40°C, and even more preferably 50°C.
• the upper limit of the above temperature is preferably 300°C, more preferably 100°C.
• the lower limit of the time is preferably 5 seconds, more preferably 30 seconds.
• the upper limit of the above time is preferably 10 minutes, more preferably 180 seconds.
• cleaning and/or drying may be performed after removing the silicon-containing film.
• the average thickness of the film was measured using a spectroscopic ellipsometer ("M2000D" manufactured by J.A. WOOLLAM). Specifically, the film thickness was measured at nine arbitrary positions at 5 cm intervals including the center of the film formed on a 12-inch silicon wafer, and the average value of these film thicknesses was calculated and used as the average thickness.
• the end of the dropwise addition was defined as the start time of the reaction, and after stirring at 40°C for 1 hour and then at 60°C for 3 hours, 66.69 g of tetrahydrofuran was added and cooled to below 10°C to obtain a polymerization reaction liquid. Next, 30.36 g of triethylamine was added to this polymerization reaction solution, and then 9.61 g of methanol was added dropwise over 10 minutes while stirring. The end of the dropwise addition was defined as the start time of the reaction, and after stirring at 20° C. for 1 hour, the reaction solution was poured into 220 g of diisopropyl ether, and the precipitated salt was filtered off.
• Synthesis Examples 2-1 to 2-7 the monomers (hereinafter also referred to as "monomers (M-1) to (M-4)") used in the synthesis are shown below.
• mol% refers to the silicon content in the compounds (a-1) to (a-4) and monomers (M-1) to (M-4) used. It means the value when the total number of moles of atoms is 100 mol%.
• D-1 A compound represented by the following formula (D-1)
• D-2 (acid generator): A compound represented by the following formula (D-2) (wherein "Bu” is (Represents n-butyl group.)
• D-3 (acid generator): Compound represented by the following formula (D-3)
• D-4 (basic compound): Compound represented by the following formula (D-4)
• D-5 (orthoester): Trimethyl orthoformate
• Example 1-1 Preparation of composition (J-1)
• [B] 0.03 parts by mass of (B-1) as a polymer [C] (as a solvent) C-1) 95.96 parts by mass
• [A] also includes the solvent (C-1) contained in the solution of the compound)
• [D] 0.01 part by mass of (D-1) as other optional components, and ( D-5) 3.00 parts by mass were mixed and the resulting solution was filtered through a filter with a pore size of 0.2 ⁇ m to prepare a silicon-containing composition (J-1).
• Examples 1-2 to 1-23, Comparative Examples 1-1 to 1-9 Preparation of compositions (J-2) to (J-23) and (j-1) to (j-9)) Compositions (J-2) to (J-23) of Examples 1-2 to 1-23 were prepared in the same manner as in Example 1-1 except that the types and amounts of each component shown in Table 3 below were used. And compositions (j-1) to (j-9) of Comparative Examples 1-1 to 1-9 were prepared. "-" in Table 3 below indicates that the corresponding component was not used.
• the resist composition for EUV exposure (R-1) consists of 100 parts by mass of resin (r-1), 20 parts by mass of acid generator (F-1), acid diffusion control agent (G-1), and acid generator (F-1). -1), and 7700 parts by mass of propylene glycol monomethyl ether acetate and 3300 parts by mass of propylene glycol monomethyl ether as solvents were mixed, and the mixture was filtered through a membrane filter with a pore size of 0.2 ⁇ m.
• the resin (r-1) is a polymer in which the content of each structural unit derived from the following monomer (E-1) and monomer (E-2) is 50 mol% and 50 mol%, respectively, and Mw was 6,400, and Mw/Mn was 1.50.
• the following compounds were used as the acid generator (F-1) and the acid diffusion control agent (G-1).
• a resist composition for EUV exposure (R-1) was coated on the silicon-containing film formed above, heated at 130°C for 60 seconds, and then cooled at 23°C for 30 seconds to form a resist film with an average thickness of 50 nm. Formed.
• a resist film was formed using an EUV scanner (ASML's "TWINSCAN NXE: 3300B" (NA 0.3, sigma 0.9, quadruple pole illumination, one-to-one line-and-space mask with a line width of 26 nm on the wafer). was irradiated with extreme ultraviolet rays. After irradiation with extreme ultraviolet rays, the substrate was heated at 110°C for 60 seconds, and then cooled at 23°C for 60 seconds.
• the silicon-containing film formed from the silicon-containing composition of the example has superior pattern collapse prevention properties compared to the silicon-containing film formed from the composition of the comparative example. and film thickness uniformity.
• the method for manufacturing a semiconductor substrate and the silicon-containing composition of the present invention it is possible to form a silicon-containing film having excellent pattern collapse suppression properties and film thickness uniformity. Therefore, these can be suitably used for manufacturing semiconductor substrates and the like.

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