WO2023203915A1 - Support pour polissage double face, et procédé et dispositif de polissage double face de plaquette de silicium l'utilisant - Google Patents
Support pour polissage double face, et procédé et dispositif de polissage double face de plaquette de silicium l'utilisant Download PDFInfo
- Publication number
- WO2023203915A1 WO2023203915A1 PCT/JP2023/009225 JP2023009225W WO2023203915A1 WO 2023203915 A1 WO2023203915 A1 WO 2023203915A1 JP 2023009225 W JP2023009225 W JP 2023009225W WO 2023203915 A1 WO2023203915 A1 WO 2023203915A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- double
- polishing
- sided polishing
- silicon wafer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000835 fiber Substances 0.000 claims abstract description 74
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 239000011347 resin Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 32
- 239000002002 slurry Substances 0.000 claims description 15
- 239000004744 fabric Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 9
- 239000003365 glass fiber Substances 0.000 claims description 6
- 239000002759 woven fabric Substances 0.000 claims description 4
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004760 aramid Substances 0.000 claims description 3
- 229920003235 aromatic polyamide Polymers 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 99
- 239000000969 carrier Substances 0.000 description 21
- 238000007517 polishing process Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
La présente invention vise à proposer un support pour un polissage double face, au moyen duquel une augmentation de la durée de vie peut être obtenue par amélioration d'une résistance à l'usure, ainsi qu'un procédé et un dispositif de polissage double face de plaquette de silicium l'utilisant. À cet effet, la présente invention concerne un support (10) pour un polissage double face, qui est un élément pour maintenir une plaquette de silicium lors de la réalisation d'un polissage double face de la plaquette de silicium, et comprend un corps de support sensiblement en forme de disque comprenant une plaque stratifiée en résine contenant un substrat de fibres, et un trou de maintien de plaquette (12) formé dans le corps de support (11). Un taux d'exposition de fibres d'une surface principale du corps de support (11) est inférieur à 50 %.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-068746 | 2022-04-19 | ||
| JP2022068746A JP2023158771A (ja) | 2022-04-19 | 2022-04-19 | 両面研磨用キャリア及びこれを用いたシリコンウェーハの両面研磨方法及び装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023203915A1 true WO2023203915A1 (fr) | 2023-10-26 |
Family
ID=88419678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2023/009225 WO2023203915A1 (fr) | 2022-04-19 | 2023-03-10 | Support pour polissage double face, et procédé et dispositif de polissage double face de plaquette de silicium l'utilisant |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2023158771A (fr) |
| TW (1) | TW202342232A (fr) |
| WO (1) | WO2023203915A1 (fr) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006026760A (ja) * | 2004-07-13 | 2006-02-02 | Speedfam Co Ltd | 被研磨物保持用キャリア |
| JP2008044083A (ja) * | 2006-08-18 | 2008-02-28 | Kyocera Chemical Corp | 研磨用保持材 |
| KR20100065562A (ko) * | 2008-12-08 | 2010-06-17 | 주식회사 실트론 | 래핑 캐리어 |
| WO2014002467A1 (fr) * | 2012-06-25 | 2014-01-03 | 株式会社Sumco | Procédé permettant de polir une pièce et dispositif de polissage d'une pièce |
| JP2015125788A (ja) * | 2013-12-26 | 2015-07-06 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法 |
| JP2020055065A (ja) * | 2018-10-01 | 2020-04-09 | マーベリックパートナーズ株式会社 | 樹脂製研磨キャリア及びその製造方法 |
-
2022
- 2022-04-19 JP JP2022068746A patent/JP2023158771A/ja active Pending
-
2023
- 2023-03-03 TW TW112107747A patent/TW202342232A/zh unknown
- 2023-03-10 WO PCT/JP2023/009225 patent/WO2023203915A1/fr unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006026760A (ja) * | 2004-07-13 | 2006-02-02 | Speedfam Co Ltd | 被研磨物保持用キャリア |
| JP2008044083A (ja) * | 2006-08-18 | 2008-02-28 | Kyocera Chemical Corp | 研磨用保持材 |
| KR20100065562A (ko) * | 2008-12-08 | 2010-06-17 | 주식회사 실트론 | 래핑 캐리어 |
| WO2014002467A1 (fr) * | 2012-06-25 | 2014-01-03 | 株式会社Sumco | Procédé permettant de polir une pièce et dispositif de polissage d'une pièce |
| JP2015125788A (ja) * | 2013-12-26 | 2015-07-06 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法 |
| JP2020055065A (ja) * | 2018-10-01 | 2020-04-09 | マーベリックパートナーズ株式会社 | 樹脂製研磨キャリア及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023158771A (ja) | 2023-10-31 |
| TW202342232A (zh) | 2023-11-01 |
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