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  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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  • H10P72/04—Apparatus for manufacture or treatment
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  • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
  • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
  • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/27—Structural arrangements therefor
  • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
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  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
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  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
  • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
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  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
  • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
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  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
  • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
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  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
  • H10W80/016—Cleaning
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  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/211—Direct bonding of chips, wafers or substrates using auxiliary members, e.g. aids for protecting the bonding area
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  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/301—Bonding techniques, e.g. hybrid bonding
  • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
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  • H10W80/00—Direct bonding of chips, wafers or substrates
  • H10W80/301—Bonding techniques, e.g. hybrid bonding
  • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
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  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
  • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Definitions

• Photolithography uses radiation, such as ultraviolet or visible light, to generate fine patterns in a semiconductor device design.
• Many types of semiconductor devices such as diodes, transistors, and integrated circuits, can be constructed using semiconductor fabrication techniques including photolithography, etching, film deposition, surface cleaning, metallization, and so forth.
• Exposure systems also called exposure tools
• An exposure system typically includes an illumination system, a reticle (also called a photomask) or spatial light modulator (SLM) for creating a circuit pattern, a projection system, and a wafer alignment stage for aligning a photosensitive resist- covered semiconductor wafer.
• the illumination system illuminates a region of the reticle or SLM with a (preferably) rectangular slot illumination field.
• the projection system projects an image of the illuminated region of the reticle pattern onto the wafer. For accurate projection, it is important to expose a pattern of light on a wafer that is relatively flat or planar, preferably having less than 10 microns of height deviation.
• a device for bonding wafers together is provided.
• the device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding.
• the first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer.
• the wafer shape data include relative z-height values of the first wafer and the second wafer.
• a stressor film deposition module is configured to form a first stressor film on the first wafer.
• a stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer.
• the first modification map is generated based on the wafer shape data of the first wafer and the second wafer.
• the second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.
• the stressor film deposition module is configured to form the first stressor film on the first wafer based on the first modification map.
• the first wafer has a front side working surface and a backside surface opposite the front side working surface.
• the stressor film deposition module is configured to form the first stressor film on the backside of the first wafer.
• the stressor film deposition module includes at least one of a spin coating apparatus, a spray coating apparatus or a vapor deposition apparatus.
• the stressor film modification module includes a direct-write exposure apparatus configured to expose the first stressor film to a pattern of electromagnetic radiation based on the first modification map.
• the stressor film modification module includes a development apparatus configured to develop a photoresist layer of the first stressor film to form a relief pattern.
• the stressor film modification module includes an etching apparatus configured to etch a shape control layer of the first stressor film using the relief pattern as an etching mask.
• the stressor film modification module includes a hot plate with temperature control by zone.
• the stressor film modification module includes a heat array with heat zones having independent temperature control.
• the heat array includes an array of resistors. Each resistor is configured to generate a respective amount of heat based on a respective current flowing through.
• at least one resistor is integrated into a wafer chuck that is configured to hold the first wafer.
• the stressor film modification module includes a laser system configured to heat at least one of the first wafer or a wafer chuck that is configured to hold the first wafer.
• a controller is configured to generate the first modification map based on the wafer shape data of the first wafer and the second wafer.
• the controller is configured to receive inputs from and provide outputs to at least one module selected from the group consisting of the metrology module, the stressor film deposition module, the stressor film modification module, the alignment module and the bonding module.
• the controller is configured to control at least one process selected from the group consisting of measuring the wafer shape data, depositing the first stressor film, modifying the first stressor film, aligning the first wafer with the second wafer, and bonding the first wafer to the second wafer.
• the controller is configured to generate the first modification map based on historic data in addition to the wafer shape data of the first wafer and the second wafer, the historic data including overlay information of historic wafers.
• the stressor film deposition module is configured to form a second stressor film on the second wafer.
• the stressor film modification module is configured to modify the second stressor film based on a second modification map that defines adjustments to internal stresses of the second wafer, the second modification map generated based on the wafer shape data of the first wafer and the second wafer.
• the alignment module and the bonding module are one integrated module such that there is no wafer transfer between the aligning and the bonding.
• a device for bonding wafers together includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding.
• the first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer.
• the wafer shape data include relative z-height values of the first wafer and the second wafer.
• a stressor film deposition module is configured to form a first stressor film on the first wafer based on a first modification map that defines adjustments to internal stresses of the first wafer.
• the first modification map is generated based on the wafer shape data of the first wafer and the second wafer.
• the second set of modules includes an alignment module configured to align the first wafer with the second wafer, with no modification to the first stressor film between the forming and the aligning.
• a bonding module is configured to bond the first wafer to the second wafer. [0025]
• the first modification map includes no pattern.
• the stressor film deposition module is configured to form the first stressor film as a blanket film.
• Figure 1A is a plan view of a hybrid system, in accordance with some embodiments of the present disclosure.
• Figure 1B is an oblique view of a hybrid system, in accordance with some embodiments of the present disclosure.
• Figure 2A shows a diagram of a process of wafer shape correction, in accordance with some embodiments of the present disclosure.
• Figure 2B shows a diagram of a process of wafer bonding, in accordance with some embodiments of the present disclosure.
• Figures 3A, 3B, 3C, 3D, 3E and 3F show cross-sectional views of a wafer at various intermediate steps of manufacturing, in accordance with some embodiments of the present disclosure.
• Figure 4A shows a plan view of a heat array, in accordance with one embodiment of the present disclosure.
• Figure 4B shows heat zones generated by a heat array, in accordance with one embodiment of the present disclosure.
• Figure 4C shows heat zones generated by a heat array, in accordance with another embodiment of the present disclosure.
• Figure 5 shows a flow chart of a process for wafer bonding, in accordance with exemplary embodiments of the present disclosure.
• Figure 6A shows an example of low order wafer deformation.
• Figure 6B shows an example of high order wafer deformation.
• Figure 7 shows an example of warped wafer test results.
• Figure 8A shows an example of raw bonding errors.
• Figure 8B shows an example of residual bonding errors.
• Figure 8C shows another example of raw bonding errors.
• Figure 8D shows another example of residual bonding errors.
• Figure 9A shows desired bonding alignment, in accordance with one embodiment of the present disclosure.
• Figure 9B shows an example of a critical bonding failure.
• Figure 10 shows experimental data regarding warped/bowed wafers and bonded overlay error. DETAILED DESCRIPTION [0047]
• first and second features are formed in direct contact
• additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
• present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
• spatially relative terms such as “top,” “bottom,” “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures.
• the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
• the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
• a typical semiconductor device can be comprised of many layers, such as over seventy individual layers. Each level requires multiple process steps including but not limited to thin film deposition, lithography and etching to form the desired structures. Non-uniform wafer stresses induced through these fundamental operations result from the patterning of thin films and are amplified via multiple temperature cycling processes, fundamentally distorting the wafer grid.
• a wafer bonding system The purpose of a wafer bonding system is to connect (or join) two component wafers together in one mechanically stable package.
• a W2W bonding platform consists of handling mechanisms and process modules for the upper (top) and lower (bottom) wafers.
• Wafer shape distortions can impact the most fundamental operation of a W2W system—the handling of wafers. If wafer warp (or wafer bow) inhibits the transfer and/or chucking of wafers, the effective yield of the bonding process is zero.
• Figure 7 demonstrates such a failure in a HVM (high volume manufacturing) W2W bonding tool. As shown, wafers with greater than approximately 370 ⁇ m of compressively induced strain (or wafer bow) had a critical handling failure requiring manual recovery from the system.
• FIG. 8A-8D show raw errors and residual errors of one wafer having a wafer bow of 100 ⁇ m.
• Figures 8C and 8D show raw errors and residual errors of another wafer having a wafer bow of 150 ⁇ m. It is noted that residual errors are uncorrectable by the construct of the system (e.g.
• a misaligned system 900B includes a first wafer 910 (or a top wafer) and a second wafer 920 (or a bottom wafer) bonded together.
• the first wafer 910 includes first interconnect structures 913 (for example as shown by 913a, 913b and 913c) while the second wafer 920 includes second interconnect structures 923 (for example as shown by 923a, 923b and 923c).
• the first interconnect structures 913 are misaligned with the second interconnect structures 923.
• the first interconnect structures 913a, 913b and 913c are respectively misaligned with the second interconnect structures 923a, 923b and 923c.
• FIG. 9A shows an aligned system 900A.
• the first interconnect structures 913 are aligned with the second interconnect structures 923.
• the first interconnect structures 913a, 913b and 913c are respectively aligned with the second interconnect structures 923a, 923b and 923c.
• at least one interface or intermediate layer may exist between the first interconnect structures 913 and the second interconnect structures 923.
• Figure 10 shows experimental data that further describes the relationship between warped/bowed wafers and bonded overlay error.
• Baseline i.e. a standard baseline process.
• “Global Bow”, “High Order Bow 1” and “High Order Bow 2” explore the response of global bow and higher order wafer distortions.
• Techniques disclosed herein provide the industry a solution to combat process- induced wafer distortion and enable the future of packaging solutions.
• Techniques herein include systems and hardware to manipulate wafer shape via stress control layer(s) (also referred to as stressor film(s)).
• the stress control layer(s) may be locally augmented by patterning and/or activation processes to enhance the degrees of freedom.
• Wafer shape metrology tools and data that are conventional to the semiconductor industry can be used as an input function to engineer the correct stress of the control layer(s) and optimize augmentation locations such that W2W (wafer-to-wafer) bonding performance is enhanced.
• FIGS. 1A and 1B are respectively a plan view and a perspective view of a hybrid system 100, in accordance with some embodiments of the present disclosure.
• the hybrid system 100 includes a first set 150 of modules configured for wafer shape correction and a second set 160 of modules configured for wafer bonding.
• the hybrid system 100 can also include various wafer handling components and/or carriers.
• a carrier block 110 includes stages 111 for receiving wafer carriers 112.
• the wafer carriers 112 can house several (semiconductor) wafers or substrates.
• a door 114 can open to access the several wafers in the wafer carriers 112.
• a first transfer arm 116 can transfer substrates from the wafer carriers 112 to a shelf unit 121 in a treatment block 120.
• a second transfer arm 123 can be positioned adjacent to the shelf unit 121 and capable of moving back and forth as well as vertically.
• the first set 150 of modules includes modules 131, 132, 133, 134, 135, 136, 137, 138 and 139.
• the modules 131-139 can include a metrology module 131, a deposition module 132, a coating module 133, a bake module 134, an imaging module 135, a development module 136, an etching module 137, a cleaning module 138 and a first inspection module 139.
• the metrology module 131 can be configured to measure wafer shape data such as bow of a substrate and generate a bow measurement which maps z-height deviations on the substrate relative to one or more reference z-height values.
• the deposition module 132 can be configured to deposit one or more films on a backside surface of the substrate (or on a front side working surface of the substrate).
• the coating module 133 can be configured to coat the backside surface of the substrate (or the front side working surface of the substrate) with a radiation-sensitive material, such as a photoresist.
• the bake module 134 can be configured to bake the radiation-sensitive material.
• the imaging module 135 can be configured to expose the radiation-sensitive material to a pattern of actinic radiation based on an overlay correction pattern, which will be explained later.
• the development module 136 can be configured to develop the radiation-sensitive material after exposure or imaging.
• the etching module 137 can be configured to use plasma or vapor-phase etching or wet etching.
• the cleaning module 138 can be configured to remove remaining (or residual) radiation- sensitive material from the substrate after an etching operation.
• the first inspection module 139 can be configured to inspect for defects after overlay correction processing. Note that provided herein is a brief description of the modules 131-139 for illustrative purposes.
• the first set 150 of modules may only include one or more of the modules 131-139, depending on specific design needs in other examples.
• the first set 150 of modules may include modules 131-138 without the first inspection module 139.
• the first set 150 of modules may include modules 131-135 without modules 136-138.
• the first set 150 of modules may include modules 131-132 without modules 133-138.
• the first set 150 of modules may include any number of the given module.
• the first set 150 of modules may include two metrology modules 131 so that two substrates can be characterized concurrently. The two substrates can also be characterized by one metrology module 131, sequentially or concurrently, in an alternative embodiment.
• the second set 160 of modules includes modules 161, 162, 163, 164 and 165.
• the modules 161-165 can include a surface preparation module 161, an alignment module 162, a (pre-)bonding module 163, a second inspection module 164 and an annealing module 165.
• the surface preparation module 161 can be configured to prepare one or more substrate surfaces for subsequent bonding.
• the surface preparation module 161 can include a plasma apparatus that is configured to generate a plasma and perform a plasma activation process on one or more substrates. The plasma activation process usually includes bombarding a substrate surface with plasma species and chemically activating the substrate surface.
• the surface preparation module 161 can further include a cleaning apparatus that is configured to rinse an activated substrate surface with deionized water.
• the surface preparation module 161 may also be referred to as a cleaning module, an etching module, an activation module, a pre-treatment module and/or the like, depending on a given process performed by the surface preparation module 161.
• the alignment module 162 can be configured to align two substrates, prior to bonding.
• the two substrates may each include features such as alignment marks, and the alignment module 162 can be configured to align the alignment marks. Alignment modules are well known.
• the (pre-)bonding module 163 can be configured to pre-bond or bond the two substrates together.
• the two substrates may be pre-bonded at a relatively low temperature, such as around room temperature or 25 °C.
• the second inspection module 164 can optionally be configured to inspect alignment after substrate pre-bonding, for example using infrared (IR) light transmission imaging.
• the annealing module 165 can be configured to anneal the two substrates at a relatively high temperature, e.g. in a range of 25-400 °C, in order to further bond the two substrates.
• the alignment module 162 and the (pre-)bonding module 163 are shown to be two separate modules. In another example (not shown), the alignment module 162 and the (pre-)bonding module 163 can be one integrated module where active alignment is executed immediately before (pre-)bonding.
• the second set 160 of modules may include one or more of the modules 161-165, depending on specific design needs in other examples.
• the second set 160 of modules may include modules 161-163 and 165 without the second inspection module 164.
• the second set 160 of modules may include any number of the particular module.
• the second set 160 of modules may include two surface preparation modules 161 so that two substrates can be prepared concurrently.
• the two substrates can also be prepared by one surface preparation module 161, sequentially or concurrently, in an alternative embodiment.
• the second set 160 of modules is configured to bond two substrates via plasma activated bonding and accordingly includes the modules 161-165 in some embodiments.
• the second set 160 of modules can be configured to bond two substrates via another wafer bonding technique, such as fusion bonding, surface activated bonding, anodic bonding, eutectic bonding, glass frit bonding, adhesive bonding, thermocompression bonding, reactive bonding, transient liquid phase diffusion bonding or the like.
• the second set 160 of modules may or may not include the modules 161- 165.
• a surface preparation module or a cleaning module
• the second set 160 of modules can include three modules (i.e. the surface preparation module, the alignment module 162 and the bonding module) in a simple form, or may further include additional modules such as an inspection module for inspecting alignment after bonding.
• two silicon substrates can be cleaned by a surface preparation module (or an etching module), which may be configured to perform a dry etching process or a wet etching process on the two silicon substrates, in order to achieve cleanliness required for pre-bonding.
• the surface preparation module may further rinse the two silicon substrates with deionized wafer to hydrophilize silicon surfaces.
• the two silicon substrates can then be aligned in the aligned module 162, pre-bonded in the (pre-)bonding module 163 (optionally inspected by the second inspection module 164), and annealed in the annealing module 165.
• the first set 150 of modules and the second set 160 of modules may have one or more modules in common.
• the first set 150 of modules and the second set 160 of modules may include a common cleaning module which is configured to remove remaining radiation-sensitive material after an etching operation, and clean two substrates prior to pre-bonding or bonding.
• the common cleaning module is configured to perform functions of the cleaning module 138 and the surface preparation module 161.
• the modules 131-139 and the modules 161-165 are shown to be arranged consecutively in two rows in Figure 1A, it should be understood that the modules 131-139 and 161-165 can be arranged in any arrangement, with any relative positions.
• the deposition module 132 and the coating module 133 may, in combination or alone, be referred to as a stressor film deposition module.
• the bake module 134, the imaging module 135, the development module 136, the etching module 137, the cleaning module 138 and the first inspection module 139 may, in combination or alone, be referred to as a stressor film modification module. While the modules 131-139 and 161-165 are shown to be positioned in the treatment block 120, it should be understood that one or more of the modules 131-139 and 161-165 can be positioned in another treatment block(s), such as a treatment block 130. [0072] Still referring to Figure 1A, a controller 140 is connected to or included by the hybrid system 100.
• the controller 140 can be a computer processor located within the hybrid system 100, or located remotely but in communication with components of the hybrid system 100.
• the controller 140 can be configured to receive wafer shape data (e.g. a bow measurement) and generate a modification map (e.g. an overlay correction pattern) based on the bow measurement.
• the bow measurement can be received from the metrology module 131, or from a separate system.
• the overlay correction pattern defines adjustments to internal stresses of the substrate (e.g. at specific locations on the substrate) based on the bow measurement.
• the overlay correction pattern can also be based on device parameters of the front side working surface of the substrate in addition to the bow measurement. For example, a relatively deep memory array can require more stress modification as compared to early stages of constructing a finFET device for logic.
• the overlay correction pattern can be generated or calculated using any of various calculation methods such as inter-plane deviation, z-height deviation from a reference plane, multi-order derivative analysis for location of interest, analysis of Zernike polynomial, pix-elated base functions optimization, or spherical Bessel functions.
• a first given location on the substrate may have a different internal stress adjustment defined as compared to a second given location on the substrate in the overlay correction pattern.
• a stress correction to be made can be specific to a location on the substrate surface. This location can be a point location, area or region of the substrate.
• the overlay correction pattern can define internal stress adjustments to result in a flat substrate (no bowing) or some selected bowing that is advantageous to subsequent patterning processes. Such internal stress adjustments can be based on type and thickness of films deposited on the backside surface of the substrate or the front side working surface of the substrate.
• the controller 140 may be coupled to various components (e.g. modules) of the hybrid system 100 to receive inputs from and provide outputs to the various components.
• the controller 140 can be configured to control at least one module selected from the group consisting of the modules 131-139 and 161-165.
• the controller 140 can be configured to receive wafer shape data from the metrology module 131.
• the controller 140 can also be configured to adjust knobs and control settings for the metrology module 131. Further, it should be understood that one or more of the functions described herein of the controller 140 can be implemented manually. For instance, knob adjustments to the metrology module 131 can be manually made.
• components of the hybrid system 100 can be connected to and controlled by the controller 140 that may optionally be connected to a corresponding memory storage unit and user interface (all not shown). Various module operations can be executed via the user interface, and various processing recipes and operations can be stored in a storage unit. Accordingly, a given substrate can be processed within the hybrid system 100 with various microfabrication techniques.
• the controller 140 can be implemented in a wide variety of manners. In one example, the controller 140 is a computer.
• the controller 140 includes one or more programmable integrated circuits that are programmed to provide the functionality described herein.
• one or more processors e.g. microprocessor, microcontroller, central processing unit, etc.
• programmable logic devices e.g. complex programmable logic device (CPLD)
• FPGA field programmable gate array
• other programmable integrated circuits can be programmed with software or other programming instructions to implement the functionality of a proscribed plasma process recipe.
• the software or other programming instructions can be stored in one or more non-transitory computer-readable mediums (e.g.
• bow measurements herein can include measuring a degree of convexity or concavity, or map z-height deviations on the substrate relative to one or more reference z- height values.
• z-height deviations are spatially mapped, such as with coordinate locations, to identify z-height deviations across a surface of the substrate.
• Bow and z-height deviations can be mapped at various resolutions depending on types of metrology equipment used and/or a resolution desired.
• the bow measurement can include raw bow data, or be represented as a bow signature with relative values.
• the reference z-height values may be all close to zero and thus representative of a wafer that is close to being flat.
• a wafer that is close to being flat or considered flat for overlay improvement herein can be a wafer having an average deviation of less than 10 microns.
• the hybrid system 100 can include one or more processing modules (e.g.
• the first set 150 of modules having a substrate holder and substrate treatment components configured to modify internal stresses on the substrate at specific locations on the substrate according to the overlay correction pattern, resulting in a modified bow of the substrate.
• the substrate with the modified bow has a modified overlay error.
• the modified overlay error has reduced overlay error as compared to an initial overlay error.
• the first set 150 of modules can be configured to differentially modify internal stresses in that the one or more processing modules are configured to independently modify different locations on the substrate such that at least a portion of the different locations are modified differently as compared to each other. Although blanket or even/symmetrical internal stress corrections can be made, the processing module herein can be configured to modify stresses by coordinate location on the substrate.
• the first set 150 of modules can be configured to increase or relax internal stresses at locations on the substrate, and to modify internal stresses on either the front side working surface or the backside surface.
• the first set 150 of modules can be configured to hold the substrate with the front side working surface facing upwardly (away from the earth's gravitational pull) while physically modifying internal stresses on the backside surface of the substrate.
• the first set 150 of modules can be configured to modify internal stresses on the substrate by location-specific addition of material on the backside surface of the substrate in that a first given location on the substrate can have more material added as compared to a second given location.
• a backside deposition system can use chemical vapor deposition while a pattern of light or heat is projected onto the backside surface.
• the first set 150 of modules can be configured to modify internal stresses on the substrate by location-specific removal of material on the backside surface of the substrate in that a first given point location on the substrate can have more material removed as compared to a second given point location.
• This can include first adding one or more films to the backside surface of the substrate and then selectively removing material from the one or more films at given locations, such as by etching the backside surface using an etch mask.
• the processing module can be configured to modify internal stresses on the substrate by location-specific implantation of particles into the backside surface of the substrate in that a first given location on the substrate can have more particles implanted as compared to a second given location.
• an ion implantation tool can implant particles into the working surface or backside surface to either increase or reduce tensile/compressive forces thereby changing bow of the substrate. Such selective increase or reduction can depend on type of surface material being treated as well as type of particles being implanted.
• the processing module can be configured to modify internal stresses on the substrate by location-specific temperature modulation of a curing film.
• a given film being cured can develop stronger or weaker bonds based on a curing temperature.
• Temperature modulation can be achieved during curing by using a projection of heat or light in which individual projected pixels can be independently addressed or varied in intensity based on the overlay correction pattern.
• Processing can be executed in one or more modules, depending on a type of treatment to the substrate to modify stresses. Accordingly, several modules can optionally be used.
• this disclosure will provide more example embodiments with respect to selective etching.
• FIG. 2A One example of a wafer shape correction flow 200A is illustrated in Figure 2A, where top and bottom wafers intended for bonding would undergo shape metrology to record their distortion signatures.
• data e.g. bow measurements
• target shape correction can be applied to both wafers or only one.
• metrology data e.g. bow measurements
• computational methods may be employed to generate a pattern to achieve the desired shape manipulation. This pattern can be recorded in shape control layer(s) to realize the preferred shape.
• the two wafers i.e.
• wafers such as process-distorted wafers
• At least one wafer may have an initial overlay error resulting from one or more microfabrication processing steps that have been executed to create at least part of a semiconductor device on a working surface of the at least one wafer.
• transistor gates may be completed or only partially completed.
• wafers typically have a front side working surface and a backside surface.
• the front side working surface is the surface on which semiconductor devices are fabricated, such as transistors, diodes, gates, wiring, et cetera.
• the backside surface is typically opposite to the front side working surface and is the surface that is typically clamped or chucked to substrate holders in related examples. Techniques herein include backside surface deposition of films to modify or tune internal stresses and change a wafer bow or first order curvature.
• the front side working surface and the backside surface are used herein to refer to opposing sides of a wafer. In some microfabrication processes, a given wafer can have active devices or power delivery structures formed on both sides. That is, the backside surface can also be a working surface to form semiconductor devices on.
• the present disclosure will use the backside surface of a wafer as an example to demonstrate wafer shape control for illustrative purposes.
• the wafers provided in Shape 201 can include two wafers to be bonded together, i.e. a first wafer and a second wafer.
• Shape 203 shows an example of the first wafer (the second wafer omitted herein for simplicity).
• Block 210A shows an example of a wafer shape control module (or a wafer shape correction module) which is configured to make internal stress adjustments to one or both of the two wafers.
• the internal stress adjustments are configured to result in a flat wafer(s) or some selected bowing that is advantageous to subsequent patterning and/or bonding processes.
• the selected bowing can include two bowing profiles that may cancel each other out when the two wafers are bonded.
• the two bowing profiles can be inverse or symmetric to each other.
• the selected bowing can also include two bowing profiles that are similar or identical to each other so that alignment/overlay errors can be canceled out.
• wafer metrology is executed on the two wafers to obtain wafer shape data of the two wafers, such as bow measurements including relative z-height values.
• the wafer metrology can for example be implemented by the metrology module 131 or by an outside metrology tool.
• a control unit 212 may be configured to generate a first modification map based on the wafer shape data of the first wafer and the second wafer.
• the first modification map is configured to define adjustments to internal stresses of the first wafer.
• the control unit 212 may be implemented by the controller 140.
• the control unit 212 may be configured to receive and/or store historic data, such as wafer shape data and/or other overlay information of historic wafers which have gone through shape correction and bonding.
• the historic data may be used alone, or in conjunction with the wafer shape data of the first wafer and the second wafer, to generate the first modification map.
• a stressor film which can include a shape control layer, is applied to or deposited on at least one of the two wafers.
• the stressor film can be deposited by the stressor film deposition module (i.e.
• Shape 215 location-specific activation is executed, for example by at least one module selected from the group consisting of the bake module 134, the imaging module 135, the development module 136 and the etching module 137. Consequently, Shape 205 shows an example of the first wafer after shape control or shape correction (the second wafer omitted herein for simplicity).
• Shape 205 may have a reduced bow or a reduced overlay error compared with Shape 203.
• the first stressor film is modified by exposing the first stressor film to a pattern of electromagnetic radiation based on the first modification map. Such exposure can be implemented by the imaging module 135. The first stressor film can undergo crosslinking/de-crosslinking to induce internal stress adjustments due to the exposure.
• the first stressor film is baked, for example in the bake module 134. Such baking may further facilitate the crosslinking/de-crosslinking.
• a photoresist layer of the first stressor film may be developed to form a relief pattern, for example in the development module 136.
• a shape control layer of the first stressor film may be etched using the relief pattern as an etching mask, for example in the etching module 137.
• the first stressor film is modified by heat treatment based on the first modification map.
• the first stressor film may then be developed and/or etched.
• a relatively uniform blanket film e.g. spin-on material
• the first modification map is based on the wafer shape data of the two wafers so the first modification map can be specific to the two wafers. In other words, the first modification map may vary in a W2W flow.
• the imaging module 135 can include a direct-write exposure apparatus that is programmable.
• the direct-write exposure apparatus can be configured to expose the first stressor film to the pattern of electromagnetic radiation based on the (varying) first modification map. More details regarding direct-write can be found in Applicant’s pending U.S. Patent Application No. 17/703,072 filed on March 24, 2022, which is incorporated herein by reference in its entirety.
• the first stressor film can be any combination of films such as oxides, nitrides and/or spin-on films present on the front and/or back of the first wafer.
• An activation process can be the result of any combination of implant, etch, radiation and/or temperature.
• FIG. 3A-3F An example of one such embodiment is depicted in Figures 3A-3F.
• a CVD (chemical vapor deposition) SiN film is used as a shape control layer of the first stressor film.
• the activation process includes applying a photosensitive layer, selectively exposing the resist (i.e. the photosensitive layer) with a compliant wavelength, opening the exposed areas with solvent develop and selectively removing the SiN with either a wet or RIE (reactive ion etching) process to attain the desired wafer shape. It should be noted in certain cases, activation may not be required at all and desired performance may be achieved by using a native blanket control layer(s). For example, in Figures 3A-3F, the flow could end after a SiN (stress control) layer is deposited.
• the first modification map includes no pattern so that the SiN layer is deposited and used as a blanket film.
• a shape control layer 303 of the first stressor film is deposited on a backside of a first wafer 301.
• the shape control layer 303 is a SiN layer formed by CVD, for instance in the deposition module 132.
• a photoresist layer 305 of the first stressor film is formed on the shape control layer 303, for instance by spin-on deposition in the coating module 133.
• the photoresist layer 305 is exposed to a pattern of electromagnetic radiation based on a first modification map, for instance in the imaging module 135.
• the photoresist layer 305 is developed to form a relief pattern, for instance in the development module 136.
• the shape control layer 303 is etched using the relief pattern as an etching mask, for instance in the etching module 137.
• the photoresist layer 305 is removed, for instance by an etching process in the etching module 137 and optionally a cleaning process in the cleaning module 138. While not shown, the photoresist layer 305 can optionally be baked between Figure 3B and Figure 3C, and/or baked between Figure 3C and Figure 3D, for instance in the bake module 134. Further, the photoresist layer 305 may be formed based on the first modification map.
• the imaging module 135 may selectively activate the first stressor film via electromagnetic radiation, similar to conventional lithography practices in the industry.
• patterning can be executed by locally heating the wafer by a hot plate (or heat plate) with temperature control by zone or a heat array as illustrated in Figures 4A-4C.
• wafer shape modification/correction can include using both electromagnetic radiation and heat as the activation vehicle.
• Figure 4A shows a plan view of a heat array 400A, in accordance with one embodiment of the present disclosure.
• the heat array 400A can include individual components, for example as shown by 410a’, 410b’, 410c’, 410p’, 410q’ and 410r’.
• the individual components can be configured to generate heat independent of each other, therefore enabling heat zones having independent temperature control. Size, position and temperature of each heat zone are determined by a respective individual component.
• the heat array 400A includes an array of resistors. Each resistor can be configured to generate a respective amount of heat based on a respective current flowing through. At least one resistor can be integrated into a wafer chuck that is configured to hold a wafer such as the first wafer. As a result, the at least one resistor may be in direct contact with the wafer.
• At least one resistor can be placed in close proximity to the wafer such that the at least one resistor can heat the wafer efficiently without touching the wafer.
• a distance between the at least one resistor and the wafer can be between 0 mm (in contact) and 5 mm.
• the heat array 400A can include a combination of both types of resistors.
• a plurality of the heat arrays 400A may be implemented.
• a lower heat array can be implemented for a lower wafer chuck, and an upper heat array for an upper wafer chuck.
• the lower heat array and the upper heat array can each have configurable height positions relative to a respective wafer chuck.
• Figure 4B shows a first pattern 400B of heat zones generated by the heat array 400A, in accordance with one embodiment of the present disclosure.
• a darker color denotes a higher temperature while a lighter color a lower temperature.
• Zone 410a has a higher temperature than Zone 410b which has a higher temperature than Zone 410c.
• the varied temperature distribution can be used to induce different degrees of internal stress adjustments to a stressor film and thus a wafer.
• the first pattern 400B of heat zones includes a line pattern 420, zones of which have an identical temperature to each other.
• Zone 410c may represent a background temperature, e.g. no heat generated.
• FIG. 4C shows a second pattern 400C of heat zones generated by the heat array 400A, in accordance with another embodiment of the present disclosure.
• a darker color denotes a higher temperature while a lighter color a lower temperature.
• Zone 410p has a higher temperature than Zone 410q which has a higher temperature than Zone 410r.
• Zones 410a, 410b, 410c, 410p, 410q and 410r respectively correspond to individual components 410a’, 410b’, 410c’, 410p’, 410q’ and 410r’.
• the heat array 400A is overall shaped like a circular wafer in this example, the heat array 400A may have any other shapes.
• the individual components of the heat array 400A may also have any shapes.
• the individual components may each include a plurality of resistors. Size of the individual components thus need not be on the same order as resolution of patterning.
• the individual component 410a’ may be on the order of 33 mm x 26 mm while the individual component 410a’ can include smaller resistors such as micro- and/or nano-resistors.
• the heat array 400A can be included as a separate heating module (not shown) in the hybrid system 100, included by the bake module 134, or included by the deposition module 132.
• the deposition module 132 can enable patterning during deposition to form a patterned film as deposited. Modification to such a patterned film may not be needed after film formation and before future wafer alignment. For example, CVD is temperature-dependent. Independent deposition rate control of the first stressor film can be achieved by heat zones of the heat array 400A.
• a laser system may also be used to heat a wafer chuck and/or a wafer directly. A wavelength can be selected that is absorptive at the wafer chuck and/or the wafer to cause heating.
• the first wafer is used as an example to describe the wafer shape correction flow 200A while the second wafer is omitted for simplicity purposes.
• the second wafer is characterized by the wafer metrology in Shape 211 but does not go through processes shown in Shape 213 and Shape 215. That is, internal stress adjustments are made only to the first wafer.
• the second wafer is characterized by the wafer metrology in Shape 211 and goes through processes shown in Shape 213 and Shape 215. Detailed descriptions have been provided above and will be omitted herein for simplicity purposes. Briefly speaking, internal stress adjustments are made to both the first wafer and the second wafer.
• a second stressor film can be formed on the second wafer and modified based on a second modification map that defines adjustments to internal stresses of the second wafer.
• the second modification map can be generated based on the wafer shape data of the first wafer and the second wafer.
• Embodiments include a unitary platform or stand-alone tool for wafer-to-wafer bonding that modifies wafer shape in at least one wafer of a pair of wafers to be bonded.
• a wafer shape modification module(s) e.g.
• example embodiments include a semiconductor tool that maintains the core functionality of conventional W2W bonding platforms and also integrates patterning modules (e.g. coating, exposure, development etc.) into the bonder to facilitate wafer shape manipulation.
• the exposure, imaging or activation module may include electromagnetic radiation and/or location-specific heat augmentation.
• the semiconductor tool is capable of accessing both the front side and backside of a wafer for processing.
• the semiconductor tool can include integrated metrology to assess incoming wafer shape.
• the semiconductor tool can include integrated metrology to assess post-bond alignment metrics.
• the stress control or wafer shape control
• the semiconductor tool can accommodate a wafer with a film externally applied on a different platform.
• a spin-on stress control film spin-on stressor film
• CVD film deposition is an alternative film deposition technique, including patterning of such a film.
• a process 200B includes Block 210A’ configured for wafer shape control/correction and Block 220 configured for wafer alignment and bonding.
• Identical components in Figures 2A and 2B have identical numerals, e.g.
• Block 210B can include one example of Block 201A.
• the location-specific activation in Shape 215 is herein accomplished by correction image exposure in Shape 217 and correction image development in Shape 219.
• Such a correction image can be the first modification map for example.
• internal stress adjustments can be made to a first wafer, but not to a second wafer.
• internal stress adjustments can be made to both the first wafer and the second wafer.
• the first wafer and the second wafer can be (pre-)bonded together.
• a plasma activation process is performed on the first wafer and the second wafer, for instance by the surface preparation module 161.
• deionized water is used to rinse the first wafer and the second wafer, for instance by the surface preparation module 161.
• the first wafer and the second wafer are aligned for instance by the alignment module 162, and are (pre-)bonded for instance by the (pre-)bonding module 163.
• (pre-)bonded wafers are inspected, for instance using IR light transmission imaging by the second inspection module 164.
• the (pre-)bonded wafers can be stripped and cleaned for instance by the cleaning module 138 and/or the surface preparation module 161.
• the (pre-)bonded wafers can further be bonded, for instance by the annealing module 165.
• FIG. 5 shows a flow chart of a process 500 for wafer bonding, in accordance with some embodiments of the present disclosure.
• the process 500 begins with Step S510 where a first modification map is generated based on wafer shape data of a first wafer and a second wafer.
• the first modification map defines adjustments to internal stresses of the first wafer.
• the process 500 then proceeds to Step S510 by modifying a first wafer shape of the first wafer by forming a first stressor film on the first wafer based on the first modification map.
• the first wafer is aligned with the second wafer after Step S520.
• Step S540 the first wafer is bonded to the second wafer.
• the substrate may include any material portion or structure of a device, particularly a semiconductor or other electronics device, and may, for example, be a base substrate structure, such as a semiconductor wafer, reticle, or a layer on or overlying a base substrate structure such as a thin film.
• a base substrate structure such as a semiconductor wafer, reticle, or a layer on or overlying a base substrate structure such as a thin film.
• substrate is not limited to any particular base structure, underlying layer or overlying layer, patterned or un-patterned, but rather, is contemplated to include any such layer or base structure, and any combination of layers and/or base structures.
• the description may reference particular types of substrates, but this is for illustrative purposes only.
• the substrate can be any suitable substrate, such as a silicon (Si) substrate, a germanium (Ge) substrate, a silicon-germanium (SiGe) substrate, and/or a silicon-on-insulator (SOI) substrate.
• the substrate may include a semiconductor material, for example, a Group IV semiconductor, a Group III-V compound semiconductor, or a Group II-VI oxide semiconductor.
• the Group IV semiconductor may include Si, Ge, or SiGe.
• the substrate may be a bulk wafer or an epitaxial layer.

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