WO2023193370A1 - Dispositif igbt et son procédé de fabrication - Google Patents

Dispositif igbt et son procédé de fabrication Download PDF

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Publication number
WO2023193370A1
WO2023193370A1 PCT/CN2022/107317 CN2022107317W WO2023193370A1 WO 2023193370 A1 WO2023193370 A1 WO 2023193370A1 CN 2022107317 W CN2022107317 W CN 2022107317W WO 2023193370 A1 WO2023193370 A1 WO 2023193370A1
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WO
WIPO (PCT)
Prior art keywords
type
trench
layer
region
semiconductor layer
Prior art date
Application number
PCT/CN2022/107317
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English (en)
Chinese (zh)
Inventor
范让萱
缪进征
王鹏飞
刘磊
龚轶
Original Assignee
苏州东微半导体股份有限公司
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Publication date
Application filed by 苏州东微半导体股份有限公司 filed Critical 苏州东微半导体股份有限公司
Publication of WO2023193370A1 publication Critical patent/WO2023193370A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Abstract

La présente demande porte, dans les modes de réalisation, sur un dispositif IGBT, qui comprend une couche semi-conductrice de type n, les éléments suivants étant formés dans la couche semi-conductrice de type n : une région de collecteur de type p ; une région de coupure de champ de type n située sur la région de collecteur de type p ; une région de dérive de type n située sur la région de coupure de champ de type n ; une pluralité de tranchées s'étendant dans la région de dérive de type n, chaque tranchée comprenant une première tranchée au niveau d'une partie supérieure et une seconde tranchée au niveau d'une partie inférieure et la largeur des premières tranchées étant supérieure à la largeur des secondes tranchées ; des colonnes de type p situées dans les secondes tranchées ; des couches diélectriques isolantes situées dans les premières tranchées et situées au-dessus des colonnes de type p ; des couches d'oxyde de grille et des électrodes de grille qui sont situées dans les premières tranchées et proches des positions de paroi latérale des premières tranchées ; des régions de corps de type p situées entre les premières tranchées adjacentes ; des régions d'émetteur de type n situées dans les régions de corps de type p ; et des régions de stockage de charge de type n situées en dessous des régions de corps de type p et entre les tranchées adjacentes.
PCT/CN2022/107317 2022-04-08 2022-07-22 Dispositif igbt et son procédé de fabrication WO2023193370A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210366889.XA CN116936626A (zh) 2022-04-08 2022-04-08 Igbt器件及其制造方法
CN202210366889.X 2022-04-08

Publications (1)

Publication Number Publication Date
WO2023193370A1 true WO2023193370A1 (fr) 2023-10-12

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Application Number Title Priority Date Filing Date
PCT/CN2022/107317 WO2023193370A1 (fr) 2022-04-08 2022-07-22 Dispositif igbt et son procédé de fabrication

Country Status (2)

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CN (1) CN116936626A (fr)
WO (1) WO2023193370A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117558622A (zh) * 2024-01-11 2024-02-13 粤芯半导体技术股份有限公司 一种沟槽刻蚀方法及沟槽型栅器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653828A (zh) * 2016-12-29 2017-05-10 江苏中科君芯科技有限公司 Igbt正面结构及制备方法
US20170194485A1 (en) * 2016-01-06 2017-07-06 Polar Semiconductor, Llc Split-gate superjunction power transistor
CN113838916A (zh) * 2021-09-23 2021-12-24 电子科技大学 一种具有pmos电流嵌位的分离栅cstbt及其制作方法
CN215377412U (zh) * 2020-02-27 2021-12-31 半导体元件工业有限责任公司 功率半导体器件
CN114242786A (zh) * 2021-11-10 2022-03-25 南瑞联研半导体有限责任公司 一种屏蔽栅型igbt器件及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170194485A1 (en) * 2016-01-06 2017-07-06 Polar Semiconductor, Llc Split-gate superjunction power transistor
CN106653828A (zh) * 2016-12-29 2017-05-10 江苏中科君芯科技有限公司 Igbt正面结构及制备方法
CN215377412U (zh) * 2020-02-27 2021-12-31 半导体元件工业有限责任公司 功率半导体器件
CN113838916A (zh) * 2021-09-23 2021-12-24 电子科技大学 一种具有pmos电流嵌位的分离栅cstbt及其制作方法
CN114242786A (zh) * 2021-11-10 2022-03-25 南瑞联研半导体有限责任公司 一种屏蔽栅型igbt器件及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117558622A (zh) * 2024-01-11 2024-02-13 粤芯半导体技术股份有限公司 一种沟槽刻蚀方法及沟槽型栅器件

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