WO2023182489A1 - Système d'évacuation, pompe à vide et procédé de nettoyage de pompe à vide - Google Patents

Système d'évacuation, pompe à vide et procédé de nettoyage de pompe à vide Download PDF

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Publication number
WO2023182489A1
WO2023182489A1 PCT/JP2023/011783 JP2023011783W WO2023182489A1 WO 2023182489 A1 WO2023182489 A1 WO 2023182489A1 JP 2023011783 W JP2023011783 W JP 2023011783W WO 2023182489 A1 WO2023182489 A1 WO 2023182489A1
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Prior art keywords
gas
pump
vacuum pump
temperature
flow path
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PCT/JP2023/011783
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English (en)
Japanese (ja)
Inventor
成燦 趙
克巳 西村
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エドワーズ株式会社
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Publication of WO2023182489A1 publication Critical patent/WO2023182489A1/fr

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
    • F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
    • F04B37/16—Means for nullifying unswept space
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04C—ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; ROTARY-PISTON, OR OSCILLATING-PISTON, POSITIVE-DISPLACEMENT PUMPS
    • F04C25/00—Adaptations of pumps for special use of pumps for elastic fluids
    • F04C25/02—Adaptations of pumps for special use of pumps for elastic fluids for producing high vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Definitions

  • the present invention relates to a vacuum evacuation system, a vacuum pump, and a method for cleaning a vacuum pump.
  • a semiconductor, an insulator, a metal film, etc. are deposited on a semiconductor wafer, and a dry etching process or CVD (Chemical Vapor Deposition) is performed to form a film using a chemical vapor phase reaction.
  • Various gases are used in process chambers, such as silane (SiH4) gas.
  • SiH4 gas silane
  • the used gas discharged from the process chamber is sucked in by a dry pump, etc., and then introduced into the abatement device via the gas exhaust piping, where the abatement process is performed.
  • Patent Document 1 see Patent Document 1.
  • the dry pump known in Patent Document 1 is explained using the reference numerals used in Patent Document 1, and includes a pump casing 23 having a plurality of pump chambers 22a, 22b, 22c, 22d, 22e, and 22f. , rotors 24a, 24b, 24c, 24d, 24e, and 24f disposed in the pump chambers 22a to 22f, respectively, and these rotors 24a to 24f are integrally fixed, and these rotors 24a to 24f are A pair of rotating shafts 25a, 25b to be rotated together, a pair of gears 26a, 26b for synchronously rotating the pair of rotating shafts 25a, 25b, and a rotating shaft 25a, via this pair of gears 26a, 26b. It has a motor 27 as a rotational drive mechanism for rotating the pump 25b, and bearings 28a, 28a, 28b, and 28b that respectively support the rotating shafts 25a and 25b in the pump casing 23.
  • the gas remaining inside the dry pump is solidified as a film or powder and becomes a deposit (mainly SiO2: silica), and this deposit disappears in a short period of time (2 to 3 months). It adheres to the inside of the dry pump and causes operational problems.
  • the rotors 24a to 24f may become locked, making it impossible to restart the pump. This is related to the fact that during operation, the pump chambers 22a to 22f become hot and expand, and the rotating shaft is displaced in the thrust direction. Taking these into account, the design is such that when the pump is stopped, the gap between both sides of the rotor and the inner surfaces of both sides of the pump chamber widens on one side (left side) and narrows on the other side (right side). This is because the gap on one side when stopped is designed to be about several tens to several hundreds of ⁇ m.
  • the present invention has been proposed to achieve the above object, and the invention according to claim 1 includes a vacuum pump that exhausts a process gas containing condensable gas or oxidized dust, and a vacuum pump that exhausts a process gas containing condensable gas or oxidized dust.
  • the vacuum pump can be started by introducing a high-temperature inert gas into the gas flow path of the vacuum pump in a stopped state to raise the temperature to approximately the same as the temperature during normal operation of the vacuum pump.
  • a first inert gas introduction unit that expands the gas flow path; and a cleaning material introduction unit that introduces a cleaning material into the gas flow path to remove the deposits. I will provide a.
  • the gas flow path of the vacuum pump is set to the temperature at which the vacuum pump normally operates. Introduce a high-temperature inert gas that can raise the temperature to approximately the same temperature. Then, by introducing a high-temperature inert gas, the temperature inside the vacuum pump is returned to approximately the same temperature as during normal operation, and the deposits adhering to the inside of the vacuum pump are melted by the heated heat and the rotor is locked. Release. Then, when the rotor is unlocked and can rotate, a cleaning material that reacts with the process gas is introduced into the gas flow path to remove deposits in the gas flow path.
  • the temperature substantially equal to the temperature during normal operation is a temperature range in which deposits adhering to the inside of the vacuum pump can be melted and the lock of the rotor can be released.
  • the invention according to claim 2 provides the vacuum evacuation system in the configuration according to claim 1, wherein the first inert gas introduction unit introduces the inert gas approximately in the middle of the gas flow path. do.
  • a high-temperature inert gas that can raise the temperature of the vacuum pump to a temperature approximately equal to the temperature during normal operation is introduced into approximately the middle of the gas flow path. This is because if the inert gas is introduced from the inlet at the end of the gas flow path to the outlet at the end rather than approximately in the middle of the gas flow path, the pump chamber at the end entrance side will be at a high temperature. The heat of the inert gas quickly raises the temperature to the normal operating temperature, but by the time the inert gas reaches the pump chamber on the outlet side farthest from the inlet, it has cooled down and has to rise to the normal operating temperature. It takes time.
  • the heat of the inert gas is transferred from the intermediate position to both the inlet and outlet sides, and the pump chambers on both the inlet and outlet sides are simultaneously heated at approximately the same level. It can be heated up to a certain temperature. Thereby, deposits inside the vacuum pump can be removed more quickly and cleanly, and maintenance work etc. can be completed.
  • the invention according to claim 3 is the configuration according to claim 1 or 2, in which a second inert gas introduction unit introduces an inert gas into the gas flow path in order to protect the seal portion of the vacuum pump.
  • a vacuum exhaust system further comprising: a position where the first inert gas introduction unit introduces the inert gas and a position where the second inert gas introduction unit introduces the inert gas into the gas flow path are the same. I will provide a.
  • the second inert gas introduction unit uses the inlet into which the sealing inert gas is introduced, and the first inert gas introduction unit introduces the high temperature inert gas into the gas flow path. Therefore, there is no need for the first inert gas introduction unit to provide a new inlet for introducing high temperature inert gas into the gas flow path, and the structure can be simplified.
  • the invention according to claim 4 provides a vacuum pump having the configuration according to any one of claims 1 to 3, wherein the vacuum pump is a positive displacement vacuum pump.
  • the invention according to claim 5 is a method for cleaning a vacuum pump that exhausts a process gas containing condensable gas or oxidized dust, wherein deposits of the process gas are deposited and the gas flow of the vacuum pump is stopped. introducing a high-temperature inert gas into the vacuum pump to a temperature substantially equal to the temperature during normal operation of the vacuum pump to expand the gas flow path so that the pump can be started; and cleaning. introducing a material into the gas flow path to remove the deposits.
  • the gas flow path of the vacuum pump is exposed to the temperature at which the vacuum pump normally operates. Introduce a high-temperature inert gas that can raise the temperature to approximately the same temperature. Then, by introducing a high-temperature inert gas, the temperature inside the vacuum pump is returned to approximately the same temperature as during normal operation, and the deposits adhering to the inside of the vacuum pump are melted by the heated heat and the rotor is locked. Release.
  • the temperature substantially equal to the temperature during normal operation here is a temperature range in which deposits adhering to the inside of the vacuum pump can be melted and the lock of the rotor can be released.
  • the invention according to claim 6 is a method for cleaning a vacuum pump for exhausting a process gas containing condensable gas or oxidized dust, wherein the process gas is discharged into a gas flow path in the vacuum pump before the vacuum pump is stopped.
  • a method for cleaning a vacuum pump is provided that includes the step of introducing a cleaning material that reacts with a gas to remove deposits caused by the process gas.
  • a cleaning material that reacts with the process gas is introduced into the gas flow path of the vacuum pump to remove deposits that have adhered inside the vacuum pump.
  • deposits inside the vacuum pump can be quickly and cleanly removed without stopping the operation of the vacuum pump. Therefore, in this vacuum pump cleaning method, deposits within the vacuum pump can be removed without stopping the vacuum pump, contributing to improved productivity.
  • the gas flow path of the vacuum pump has a temperature at which the vacuum pump normally operates.
  • a cleaning material that reacts with the process gas is introduced into the gas flow path to remove deposits in the gas flow path, thereby removing more deposits within the vacuum pump. It can be removed quickly and cleanly. Thereby, maintenance etc. can be completed neatly in a short time.
  • FIG. 1 is a block diagram showing a schematic overall configuration of an exhaust gas treatment apparatus in a semiconductor manufacturing process as a first example according to an embodiment of the present invention
  • FIG. It is a schematic side sectional view which shows typically the internal structure of the dry pump in the exhaust gas treatment device same as the above.
  • 3 is a sectional view taken along line AA in FIG. 2.
  • FIG. 3 is an example of data showing how solid SiO2 is changed into gaseous SiF4 by NF3 plasma and is discharged from a dry pump.
  • It is a schematic side sectional view which shows typically the internal structure of another dry pump in the same exhaust gas treatment apparatus as a 2nd Example. 6 is a sectional view taken along line BB in FIG. 5.
  • FIG. It is a figure showing an example of maintenance judgment criteria in a control device.
  • the present invention provides a vacuum evacuation system, a vacuum pump, and a vacuum pump that can easily recover from a stopped state in which a dry pump has stopped and a deposition section has blocked the gas flow path of the vacuum pump, making it impossible to restart the pump.
  • a vacuum pump for evacuating a process gas containing condensable gas or oxidized dust, and a stop when deposits of the process gas block the gas flow path of the vacuum pump A high-temperature inert gas that is approximately equal to the temperature in the gas flow path during normal operation of the vacuum pump is introduced into the gas flow path of the vacuum pump in a state where the gas flow is controlled so that the vacuum pump can be started.
  • a configuration comprising: a first inert gas introduction unit that expands the channel; and a cleaning material introduction unit that introduces a cleaning material that reacts with the process gas into the gas flow channel to remove the deposits. This was achieved by doing this.
  • drawings may be exaggerated by enlarging or otherwise exaggerating characteristic parts in order to make the features easier to understand, and the dimensional ratios of the constituent elements are not necessarily the same as in reality.
  • hatching of some components may be omitted in order to make the cross-sectional structure of the components easier to understand.
  • FIG. 1 to 3 show an exhaust gas treatment apparatus in a semiconductor manufacturing process as an example according to an embodiment of the present invention.
  • FIG. 1 is a block diagram showing the overall general configuration of the exhaust gas treatment apparatus
  • FIG. 3 is a schematic side sectional view schematically showing the internal structure of the dry pump 17 in the processing apparatus
  • FIG. 3 is a sectional view taken along the line AA in FIG.
  • the exhaust gas treatment device is controlled according to a predetermined procedure by a program within a control device 10.
  • a semiconductor wafer 12 is housed inside the process chamber 11, and a process gas for processing and a cleaning gas for cleaning are supplied through gas supply piping 13, respectively.
  • a dry pump 17 as a vacuum pump is connected to the process chamber 11 via a gas pipe 14, and the process chamber 11 is reduced in pressure to a high vacuum by driving the dry pump 17.
  • the process gas containing condensable gas or oxidized dust such as silane (SiH4) gas, and ClF3 (chlorine trifluoride), NF3 (trifluoride trifluoride), which has been processed inside the process chamber 11,
  • a cleaning gas such as nitrogen), HCl (hydrogen chloride) (hereinafter, these process gases and cleaning gases are collectively referred to as "used gas G1") is introduced into the downstream dry pump 17 through the gas pipe 14.
  • used gas G1 used gas
  • the internal structure of the dry pump 17 is shown in FIGS. 2 and 3.
  • the used gas G1 from the process chamber 11 is sucked into the dry pump 17 through the gas inlet 17a, and the used gas G1 is gradually introduced into the dry pump 17 in six stages. That is, the first stage pump chamber 22a, the second stage pump chamber 22b, the third stage pump chamber 22c, the fourth stage pump chamber 22d, the fifth stage pump chamber 22e, and the sixth stage pump.
  • the pressure is gradually increased through the chambers 22f in this order.
  • the used gas G1 pressurized to near atmospheric pressure in the dry pump 17 is discharged from the gas exhaust port 17b into the gas exhaust pipe 18, and from the gas exhaust pipe 18. It is sent to the abatement device 19, where it is rendered harmless and then discharged into the atmosphere. Therefore, one end of the gas exhaust pipe 18 is connected to the gas exhaust port 17b of the dry pump 17, and the other end is connected to the gas inlet 19a of the abatement device 19.
  • the restart material supply pipe 21a is connected to the first inert gas introduction unit 20a, and the other end is connected to the restart material introduction port 17c via an on-off valve 31a.
  • the restart material inlet 17c is located in an intermediate pump chamber among a plurality of (six in this embodiment) pump chambers 22a to 22f, or in the third stage pump chamber 22c in this embodiment. It is provided in the pump casing 23 corresponding to the location.
  • a high temperature (for example, 400°C) inert gas G2 hot N2, etc.
  • is sent from the first inert gas introduction unit 20a by opening and closing the on-off valve 31a. is adapted to be introduced into the dry pump 17.
  • Opening/closing control of the on-off valve 31a is performed under control of the control device 10. That is, when the on-off valve 31a is open, the high temperature inert gas G2 enters the pump casing 23 through the restart material inlet 17c. Then, when the high-temperature inert gas G2 is fed into the pump casing 23 from the restart material inlet 17c for a certain period of time (for example, about 2 hours), the inside of the pump casing 23 is heated to approximately the same high temperature as when the dry pump 17 is operating.
  • the plasma supply pipe 21b has one end connected to the gas inlet 17a of the pump casing 23 via the on-off valve 31b and the gas pipe 14, and the other end connected to the cleaning material supply unit 30.
  • NF3 plasma which is a cleaning material G4 for cleaning the inside of the dry pump 17
  • NF3 plasma which is a cleaning material G4 for cleaning the inside of the dry pump 17
  • the cleaning material G4 includes, in addition to NF3 plasma (F radicals), plasma (F radicals), HF (hydrogen fluoride), water vapor, silicon chloride, and the like. Opening/closing control of the on-off valve 31b is performed under control of the control device 10. That is, when the on-off valve 31b is open, the cleaning material G4 from the cleaning material supply unit 30 enters the pump casing 23 through the gas inlet 17a.
  • the cleaning material G4 is flowed into the pump casing 23 after the dry pump 17 is restarted. Then, when the cleaning material G4, which is NF3 plasma, is flowed into the pump casing 23, the product reacts with F radicals in the plasma and is released as a gas, so that the deposits in the dry pump 17 are almost eliminated. Then, the deposits in the dry pump 17 that are released as a gas can flow into the gas exhaust pipe 18 from the gas exhaust port 17b and be fed into the abatement device 19.
  • the dry pump 17 shown in FIGS. 2 and 3 is a positive displacement vacuum pump, and has a plurality of pump chambers (six in this embodiment), namely, a first stage pump chamber 22a, a second stage pump chamber 22b, A pump casing 23 has a third-stage pump chamber 22c, a fourth-stage pump chamber 22d, a fifth-stage pump chamber 22e, and a sixth-stage pump chamber 22f.
  • the pump casing 23 includes bearings 28a, 28a, 28b, and 28b that respectively support rotating shafts 25a and 25b.
  • the pump casing 23 is formed by sequentially stacking a plurality of stators 23a in the axial direction in consideration of ease of assembly. Furthermore, as shown in FIG. 3, the pump casing 23 has a generally rectangular cross section taken at right angles to the rotating shafts 25a, 25b.
  • the rotors 24a to 24f integrally fixed to the rotating shaft 25a and the rotors 24a to 24f integrally fixed to the rotating shaft 25b are rotated into the pump chamber 22a. ⁇ 22f, they rotate in opposite directions.
  • the rotors 24a to 24f respectively attached to the rotating shafts 25a and 25b in this embodiment are cocoon-shaped roots rotors, and are rotated at 90° while maintaining a small gap without contacting each other. Rotates synchronously with a phase difference of
  • the used gas G1 is sucked into the first stage pump chamber 22a from the gas inlet 17a communicating with the vacuum target space.
  • the used gas G1 is sequentially sucked into the dry pump through the gas exhaust pipe 18 communicating with the gas exhaust port 17b of the sixth stage pump chamber 22f. 17, and the vacuum target space becomes a vacuum state.
  • the used gas G1 is discharged while being compressed in each of the pump chambers 22a, 22b, 22c, 22d, 22e, and 22f, so the temperature of the used gas G1 increases and the temperature of the pump casing 23 increases. The temperature also rises. Note that among the pump chambers 22a, 22b, 22c, 22d, 22e, and 22f, the used gas G1 is the most used on the discharge side of the sixth stage pump chamber 22f, where the difference in pressure between the suction side and the discharge side is large. The temperature of gas G1 increases.
  • the temperature of the used gas G1 here is relatively high, for example, about 150 to 200°C.
  • the used gas G1 discharged from the sixth stage pump chamber 22f passes through the gas exhaust pipe 18 and heads to the abatement device 19 located several meters ahead.
  • the gas remaining inside the dry pump 17 is solidified as a film or powder and becomes a deposit (mainly SiO2: silica), and this deposit remains for a short period of time ( After 2 to 3 months), it adheres to the inside of the dry pump and causes operational problems. Furthermore, if the dry pump 17 is temporarily stopped for maintenance or other reasons, the rotors 24a to 24f may become locked, making it impossible to restart the pump. As mentioned above, this is because the gap between the rotor 24a to 24f and the inner wall surface of the pump chambers 22a to 22f, which is the fixed side, becomes high during operation.
  • the gap between both side surfaces of the rotors 24a to 24f and both inner surfaces of the pump chambers 22a to 22f widens on one side (left side) and narrows on the other side (right side) when the pump is stopped. This is because the gap on one side when stopped is designed to be approximately several tens to several hundreds of ⁇ m.
  • the on-off valve 31a is opened via the control device 10, and the high-temperature inert gas G2 of about 400° C. is introduced into the pump casing 23 from the restart material inlet 17c from the first inert gas introduction unit 20a. for approximately several hours (for example, about 2 hours).
  • the restart material inlet 17c is provided in the fourth stage pump chamber 22d, and the high temperature inert gas G2 of approximately 400° C.
  • the pump casing 23 is introduced into the pump casing 23 from the fourth stage pump chamber 22d.
  • This is the third stage pump chamber 22c, the second stage pump chamber 22b, the first stage pump chamber 22a, the fifth stage pump chamber 22e, the sixth stage pump chamber 22f, and the gas inlet 17a side. It spreads toward both sides of the gas discharge port 17b, heating the entire inside of the pump casing 23 to a high speed and high temperature. Due to this heating, the temperature inside the pump casing 23 becomes approximately the same high temperature (approximately 150° C. to 200° C.) as during operation of the dry pump 17, and both side surfaces of the rotors 24a to 24f and both inner surfaces of the pump chambers 22a to 22f are heated.
  • high-temperature inert gas G2 is introduced to heat the inside of the pump casing 23 to a temperature approximately equal to the temperature during normal operation of the dry pump 17, so that the dry pump 17 can be started.
  • the inert gas G2 introduced into the pump casing 23 is passed through the gas exhaust pipe 18 and sent into the abatement device 19.
  • the temperature of the inert gas G2 sent into the pump casing 23 is approximately 400° C. in anticipation of a temperature drop in the supply pipe before being introduced into the pump casing 23.
  • the heating temperature is approximately 150°C to 200°C, but other temperatures (lower temperature or high temperature).
  • the on-off valve 31b is opened via the control device 10, and the cleaning material G4, which is NF3 plasma (F radical), is supplied from the cleaning material supply unit 30 to the gas inlet port. 17a into the pump casing 23, and the cleaning material G4 flows into the pump casing 23.
  • the cleaning process here is a step in which the cleaning material G4 is introduced into the gas flow path to remove deposits. Further, the cleaning material G4 flowing into the pump casing 23 is flowed into the abatement device 19 from the gas exhaust port 17b through the gas exhaust pipe 18.
  • the cleaning material G4 fed into the pump casing 23 flows through the pump casing 23, the product reacts with F radicals in the plasma and is released as a gas, removing deposits in the dry pump 17. Almost disappears. Further, the deposits in the dry pump 17 released as a gas are flowed together with the cleaning material G4 into the gas exhaust pipe 18 from the gas outlet 17b, and are further sent into the abatement device 19.
  • FIG. 4 shows the difference between NF3 (nitrogen trifluoride) plasma and SiF4 (tetrafluoride) plasma per unit time when cleaning material G4, which is NF3 plasma, is flowed into the pump casing 23 from the gas inlet 17a and discharged from the gas outlet 17b.
  • This is data obtained by measuring each concentration (ppm) of silicon oxide).
  • the vertical axis is the concentration (ppm)
  • the horizontal axis is the elapsed time T.
  • the data in FIG. 4 shows that solid SiO2 (silica) is changed into gaseous SiF4 by NF3 plasma (F ions) and is discharged. That is, in FIG. 4, NF3 plasma is introduced into the pump casing 23 from the gas inlet 17a, and the amount (concentration) of NF3 plasma and the amount of SiF4 (concentration) discharged from the gas inlet 17a from time T0 to time Tn are calculated. Each represents a change in concentration).
  • the reason that the concentration of NF3 plasma during the period from time T1 to T2 is low is because the reaction with SiO2 is progressing. Further, the change to SiF4 peaks around time T2, and thereafter the change to SiF4 gradually decreases.
  • this data also shows that when the cleaning material G4, which is NF3 plasma, is flowed into the pump casing 23 from the gas inlet 17a, solid SiO2 changes to gaseous SiF4 and is discharged from the gas outlet 17b. It can be seen that some SiO2 disappears from inside the pump casing 23.
  • a high-temperature inert gas G2 is introduced into the gas flow path of the pump 17 to raise the temperature to approximately the same as the temperature during normal operation of the dry pump 17, and the temperature inside the dry pump 17 is brought to a temperature close to that during normal operation.
  • the locks of the rotors 24a to 24f can be released and the rotors 24a to 24f can be rotated.
  • the cleaning material G4 that reacts with the process gas G1 is introduced into the gas flow path to remove deposits in the gas flow path. Objects can be removed faster and more cleanly. Thereby, maintenance etc. can be completed neatly in a short time.
  • the restart material supply pipe 21a is connected to the pump casing 23 corresponding to the intermediate pump chamber among the plurality of pump chambers 22a to 22f, that is, the fourth stage pump chamber 22d.
  • a restart material inlet 17c is provided at a location, and high-temperature inert gas G2 is introduced into the pump casing 23 from the third-stage pump chamber 22c, but this is not necessarily the third-stage pump chamber 22c.
  • the gas may be introduced from the gas inlet 17a and flowed from the first stage pump chamber 22a.
  • the effects of introducing from an intermediate pump chamber instead of from the first stage pump chamber 22a are as follows.
  • FIG. 5 and 6 show a second embodiment of the dry pump in the exhaust gas treatment device shown in FIG. 1, and FIG. 5 is a schematic side sectional view schematically showing the internal structure of the dry pump 32, and FIG. is a sectional view taken along line BB in FIG. 5.
  • the entire temperature of the dry pump 17 is maintained at approximately the same high temperature as during operation, from the outside of the pump casing 23 through the restart material inlet 17c into the third stage pump chamber 22c.
  • the pump restart material which is a high temperature (approximately 400°C) inert gas G2 that can be raised to a temperature (approximately 150°C to 200°C)
  • G2 a high temperature inert gas
  • each of the plurality of stators 23a which are stacked in the axial direction and constitute the pump casing 23, has sealing gas grooves 33a on opposing surfaces that extend outside the pump chambers 22d to 22f. It is formed so as to surround it.
  • the sealing gas grooves 33a face each other in the parts forming the pump chambers 22d to 22f to form a seal.
  • a gas flow path 33 is formed therein. Note that the sealing gas flow path 33 will be described with reference to the case where the sealing gas grooves 33a are formed on both sides of the stator 23a, but the sealing gas grooves 33a may be formed only on one side of the stator 23a. I do not care.
  • each pump chamber 22d to 22f in order to maintain the airtightness of each pump chamber 22a to 22f, a space surrounding the outside of each pump chamber 22d to 22f is placed between the stator 23a and each stator 23a, as shown in FIG.
  • An O-ring 35 is closely arranged within the O-ring groove 34.
  • the sealing gas flow path 33 is provided with a gas intake port 42 for introducing the sealing gas G3 and the high-temperature inert gas G2 into each of the pump chambers 22d to 22f.
  • sealing gas G3 which is N2 gas, is flowed (introduced) into each of the pump chambers 22d to 22f of the fourth, fifth, and sixth stages, which are the latter stages.
  • the pump chamber through which the sealing gas G3 flows may be configured to flow only to the final pump chamber (sixth stage pump chamber 22f) where the pressure is highest, or in consideration of heating inside the pump casing 23, Even if the sealing gas passages 33 are provided corresponding to all the pump chambers 22a to 22f, and the high temperature inert gas G2 is made to flow from all the sealing gas passages 33 into all the pump chambers 22a to 22f. good.
  • the sealing gas groove 33a of each stator 23a forming the fourth, fifth, and sixth stage pump chambers 22d to 22f has a sealing gas groove 33a located outside the stator 23a.
  • a sealing gas exhaust port 37b is provided.
  • a sealing gas inlet pipe 38 to which sealing gas G3 is supplied is connected to each sealing gas inlet 36a via an on-off valve 39, and a sealing gas inlet 38 is connected to each sealing gas exhaust pipe connection port 37a.
  • Seal gas discharge pipes 40 through which gas G3 is discharged are connected to each other via on-off valves 41. Further, the sealing gas exhaust pipe 40 is connected to the gas exhaust pipe 18 via the dilution gas introduction section 18a.
  • on-off valves 39 and 41 for example, on-off valves that can adjust the gas flow rate may be used.
  • the first inert gas introduction unit 20a is connected to the sealing gas introduction pipe 38 via a pump restart material supply pipe 43 and an on-off valve 44. Opening/closing control of the on-off valve 44 is performed under control of the control device 10. That is, when flowing the inert gas G2, the on-off valve 39 and the on-off valve 41 are closed, and the on-off valve 44 is opened. Then, the high-temperature inert gas G2 from the first inert gas introduction unit 20a enters the sealing gas passage 33 from the pump restart material supply pipe 43 through the sealing gas introduction port 36a, and further gas It flows through the intake port 42 into each of the fourth, fifth, and sixth stage pump chambers 22d to 22f.
  • this high-temperature inert gas G2 spreads throughout the inside of the pump casing 23, raising the temperature inside the pump casing 23. Thereafter, the gas is discharged into the gas exhaust pipe 18 through the gas discharge port 17b, and sent to the abatement device 19 via the gas exhaust pipe 18.
  • the sealing gas The temperature inside the dry pump 32 is raised to a temperature approximately equal to the temperature during normal operation (100°C to 190°C) using the high-temperature inert gas G2 flowing into the flow path 33, so that the temperature inside the dry pump 32 becomes normal.
  • the temperature can be quickly returned to near operating temperature. Then, the deposits adhering to the interior of the dry pump 17 are melted by high temperature heat, and the locks of the rotors 24a to 24f are released, allowing the rotors 24a to 24f to rotate.
  • the on-off valve 31b is opened via the control device 10, and the cleaning material G4, which is NF3 plasma, is sent into the pump casing 23 from the gas inlet 17a.
  • G4 flows into the pump casing 23.
  • the cleaning material G4 that has flowed into the pump casing 23 is flown into the abatement device 19 from the gas exhaust port 17b through the gas exhaust pipe 18.
  • the deposits in the dry pump 17 released as a gas are flowed into the gas exhaust pipe 18 from the gas outlet 17b together with the cleaning material G4, and further sent into the abatement device 19.
  • the exhaust gas treatment apparatus when the rotors 24a to 24f of the dry pump 32 are locked due to the process gas accumulation and the dry pump 17 cannot be restarted from a stopped state, the sealing gas flow Since the high temperature inert gas G2 is flowed into the passage 33 to return the temperature inside the dry pump 17 to a temperature close to that during normal operation, the deposits inside the dry pump 32 can be removed more quickly and cleanly. Thereby, maintenance etc. can be completed neatly in a short time.
  • a normal The temperature inside the dry pump 17 is returned to a temperature close to that during normal operation by flowing a high-temperature inert gas G2 to raise the temperature to approximately the same as the temperature during operation, and after restarting the dry pump 17, cleaning material is added to the inside of the dry pump 17. I flushed G4 to eliminate the deposits.
  • a cleaning material G4 that reacts with the process gas is flowed into the gas flow paths of the dry pump 17 and the dry pump 32 in advance to remove deposits (SiO2) caused by the process gas G1. It is also possible to do this.
  • FIG. 7 An example of removing deposits (SiO2) caused by the process gas by flowing a cleaning material G4 that reacts with the process gas into the gas flow paths of the dry pump 17 and the dry pump 32 before stopping the dry pump 17 and the dry pump 32 is shown in FIG. 7 will be used to explain the case of the dry pump 17 shown in FIGS. 1 to 3.
  • FIG. 7 An example shown in FIG. 7 is a case where control is performed by the control device 10. While the dry pump 17 is in operation, the speed 101 of the booster pump, the speed 102 of the dry pump 17, and the current value 103 of the dry pump 17 are respectively input to the control device 10, and these values are monitored for approximately one hour. . If the speed 102 of the dry pump 17 falls below the speed 101 of the booster pump several times during this one hour period, and the current value 103 of the dry pump 17 exceeds the threshold value (for example, 45.0 amperes) several times, , the control device 10 determines that the amount of deposits in the dry pump 17 exceeds the standard.
  • the threshold value for example, 45.0 amperes
  • the control device 10 controls the first inert gas introduction unit 20a and the on-off valve 31b to cause cleaning to react with the process gas G1 from the gas introduction port 17a into the pump casing 23.
  • the material G4 is allowed to flow for a certain period of time to eliminate the deposits that have accumulated inside the pump casing 23. Thereby, deposits adhering to the inside of the dry pump 17 can be removed in advance without stopping the dry pump 17.
  • Control device 11 Process chamber 12: Semiconductor wafer 13: Gas supply piping 17: Dry pump 17a: Gas inlet 17b: Gas outlet 17c: Restart material inlet 18: Gas exhaust piping 19: Abatement device 20a: First inert gas introduction unit 20b: Second inert gas introduction unit 21a: Restart material supply piping 21b: Plasma supply piping 22a: First stage pump chamber 22b: Second stage pump chamber 22c: Third Stage pump chamber 22d : Fourth stage pump chamber 22e : Fifth stage pump chamber 22f : Sixth stage pump chamber 23 : Pump casing 24a : Rotor 24b : Rotor 24c : Rotor 24d : Rotor 24e : Rotor 24f : Rotor 31a: On-off valve 31b: On-off valve 32: Dry pump 33: Seal gas passage 33a: Seal gas groove 36: Seal gas introduction passage 36a: Seal gas introduction port 36b: Seal gas introduction port 37: For seal Gas exhaust passage 37a: Seal gas discharge pipe connection port 37b: Seal gas discharge port 38:

Abstract

[Problème] Fournir un système d'évacuation, une pompe à vide et un procédé de nettoyage d'une pompe à vide qui permettent une récupération facile à partir d'un état arrêté dans lequel une pompe sèche s'est arrêtée et des dépôts ont bloqué un trajet d'écoulement de gaz de la pompe à vide, rendant le redémarrage impossible. [Solution] L'invention fournit : une pompe à vide pour évacuer un gaz de traitement qui contient du gaz condensable ou de la poussière oxydée ; une première unité d'introduction de gaz inerte pour introduire un gaz inerte à haute température, qui est destiné à élever la température à sensiblement la même température que lorsque la pompe à vide fonctionne normalement, dans un trajet d'écoulement de gaz de la pompe à vide dans un état arrêté où des dépôts du gaz de traitement se sont accumulés, et pour amener le trajet d'écoulement de gaz à se dilater de telle sorte que la pompe à vide peut être démarrée ; et une unité d'introduction de matériau de nettoyage pour introduire un matériau de nettoyage dans le trajet d'écoulement de gaz pour éliminer les dépôts.
PCT/JP2023/011783 2022-03-25 2023-03-24 Système d'évacuation, pompe à vide et procédé de nettoyage de pompe à vide WO2023182489A1 (fr)

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JP2022050931A JP2023143517A (ja) 2022-03-25 2022-03-25 真空排気システム、真空ポンプ及び真空ポンプのクリーニング方法
JP2022-050931 2022-03-25

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1073088A (ja) * 1996-08-30 1998-03-17 Hitachi Ltd ターボ真空ポンプ及びその運転方法
JP2008248754A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd ターボ分子ポンプ、基板処理装置、及びターボ分子ポンプの堆積物付着抑制方法
JP2016033364A (ja) * 2014-07-31 2016-03-10 エドワーズ株式会社 ドライポンプ及び排ガス処理方法
JP2017089462A (ja) * 2015-11-06 2017-05-25 エドワーズ株式会社 真空ポンプの判断システム、および真空ポンプ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1073088A (ja) * 1996-08-30 1998-03-17 Hitachi Ltd ターボ真空ポンプ及びその運転方法
JP2008248754A (ja) * 2007-03-29 2008-10-16 Tokyo Electron Ltd ターボ分子ポンプ、基板処理装置、及びターボ分子ポンプの堆積物付着抑制方法
JP2016033364A (ja) * 2014-07-31 2016-03-10 エドワーズ株式会社 ドライポンプ及び排ガス処理方法
JP2017089462A (ja) * 2015-11-06 2017-05-25 エドワーズ株式会社 真空ポンプの判断システム、および真空ポンプ

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