WO2023171558A1 - ガラス - Google Patents

ガラス Download PDF

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Publication number
WO2023171558A1
WO2023171558A1 PCT/JP2023/007999 JP2023007999W WO2023171558A1 WO 2023171558 A1 WO2023171558 A1 WO 2023171558A1 JP 2023007999 W JP2023007999 W JP 2023007999W WO 2023171558 A1 WO2023171558 A1 WO 2023171558A1
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WO
WIPO (PCT)
Prior art keywords
glass
content
mol
thermal expansion
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/007999
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English (en)
French (fr)
Japanese (ja)
Inventor
力也 門
誠二 稲葉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to CN202380024618.9A priority Critical patent/CN118786099A/zh
Priority to JP2024506133A priority patent/JPWO2023171558A1/ja
Priority to KR1020247029448A priority patent/KR20240164504A/ko
Publication of WO2023171558A1 publication Critical patent/WO2023171558A1/ja
Priority to US18/813,283 priority patent/US20240409452A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses

Definitions

  • the present invention relates to glass.
  • Patent Document 1 describes a supporting glass substrate having an average linear thermal expansion coefficient of 50 ⁇ 10 ⁇ 7 /°C or more and 66 ⁇ 10 ⁇ 7 /°C or less in a temperature range of 20° C. to 200° C.
  • glass used for supporting semiconductor devices and other uses is required to have a low coefficient of thermal expansion and low electrical resistance.
  • An object of the present invention is to provide a glass that can lower the electrical resistance while lowering the coefficient of thermal expansion.
  • the glass according to the present disclosure has a conductivity parameter A shown in equation (1) calculated from the composition of 1.3 or more, and a thermal expansion parameter B shown in equation (2) calculated from the composition of 2.3. It is less than or equal to 0.
  • [R 2 O] is the total content of oxides of monovalent elements contained in the glass, expressed as mol% based on oxides
  • [SiO 2 ] is the content of SiO 2 expressed in mol% based on oxide
  • [Al 2 O 3 ] is the content of Al 2 O 3 expressed in mol% based on oxide
  • ⁇ is a value shown in the following formula (1A).
  • each of [R1 2 O], [R2 2 O], ... [Rn 2 O] represents the content of monovalent element oxides contained in the glass, expressed in mol% based on oxides. Refers to quantity.
  • FIG. 1 is a schematic diagram of the glass according to this embodiment.
  • FIG. 2 is a schematic diagram showing an electrode pattern.
  • FIG. 1 is a schematic diagram of the glass according to this embodiment.
  • the glass 10 according to this embodiment is used as a glass substrate for manufacturing semiconductor packages, and more specifically, is a supporting glass substrate for manufacturing FOWLP and the like.
  • the use of the glass 10 is not limited to manufacturing FOWLPs and the like, and may be used as a glass substrate for supporting members, or may be used for purposes other than supporting members.
  • FOWLP and the like include a fan out wafer level package (FOWLP) and a fan out panel level package (FOPLP).
  • FOWLP fan out wafer level package
  • FOPLP fan out panel level package
  • the conductivity parameter A of the glass 10 shown in the following formula (1) is 1.3 or more, preferably 1.4 or more and 4.0 or less, and 1.5 or more and 3.0 or less. is more preferable, and even more preferably 1.7 or more and 2.5 or less.
  • the conductivity parameter A can be calculated from the composition of the glass 10.
  • the conductivity parameter A is an index value indicating that the higher the value, the lower the electrical resistance of the glass 10 (the higher the conductivity). Therefore, the electrical resistance of the glass 10 becomes low when the conductivity parameter A falls within the above range.
  • [R 2 O] in formula (1) is the total content of oxides of monovalent elements contained in the glass 10 expressed in mol% based on oxides. That is, for example, when the glass 10 contains Li 2 O, Na 2 O, and K 2 O on an oxide basis, [R 2 O] is the content of Li 2 O contained in the glass 10 (mol% ), the content (mol%) of Na 2 O contained in the glass 10, and the content (mol%) of Na 2 O contained in the glass 10 ([Li 2 O] + [Na 2 O ]+[K 2 O]). Further, [SiO 2 ] in formula (1) is the content of SiO 2 contained in the glass 10 expressed in mol% based on oxides.
  • ⁇ in formula (1) is expressed by the following formula (1A).
  • each of [R1 2 O], [R2 2 O], ... [Rn 2 O] in formula (1A) represents the monovalent element contained in the glass 10 in mol% representation based on oxides. Refers to the content of each oxide. In other words, ([R1 2 O]! ⁇ [R2 2 O]! ⁇ ... ⁇ [Rn 2 O]! is the factorial value of the content of oxides of monovalent elements contained in the glass 10. can be said to refer to the value obtained by multiplying each type of oxide of a monovalent element contained in the glass 10.
  • the number of types of oxides of monovalent elements contained in the glass 10 is generalized to n, but the number of types of oxides of monovalent elements contained in the glass 10 is may be arbitrary, and may be one, two, or three or more.
  • the conductivity parameter A is a parameter defined as above, the larger the ratio of the total content of oxides of monovalent elements to SiO 2 is, the higher the value becomes. The larger the difference in content between oxides (the more unbalanced the oxide content of each monovalent element is), the higher the value.
  • the glass 10 according to the present embodiment has a ratio of the total content of oxides of monovalent elements to SiO 2 and a content of oxides of each monovalent element so that the conductivity parameter A falls within the above range. It can be said that the balance of quantity has been set.
  • the glass 10 has a thermal expansion parameter B shown in the following formula (2) of 2.0 or less, preferably 1.74 or less, more preferably 0.1 or more and 1.65 or less, More preferably, it is 0.1 or more and 1.55 or less.
  • the thermal expansion parameter B can be calculated from the composition of the glass 10.
  • the thermal expansion parameter B is an index value indicating that the lower the value, the lower the coefficient of thermal expansion of the glass 10 tends to be. Therefore, the glass 10 has a low coefficient of thermal expansion when the thermal expansion parameter B falls within the above range.
  • [R 2 O] in formula (2) is the total content of oxides of monovalent elements contained in the glass 10, expressed as mol% based on oxides, as in formula (1). It is. Further, [SiO 2 ] in formula (2) is the content of SiO 2 contained in the glass 10 expressed in mol% based on oxides, similarly to formula (1). Further, [Al 2 O 3 ] in formula (2) is the content of Al 2 O 3 contained in the glass 10 expressed in mol% based on oxides.
  • the thermal expansion parameter B is a parameter defined as above, the lower the total content of oxides of monovalent elements, the lower the value, and the higher the content of SiO 2 and Al 2 O 3 . , has a low value. That is, in the glass 10 according to the present embodiment, the total content of oxides of monovalent elements and the content of SiO 2 and Al 2 O 3 are set so that the thermal expansion parameter B falls within the above range. It can be said that there are.
  • composition of glass Next, a preferred composition of the glass 10 will be explained.
  • the glass 10 may have any composition in which the conductivity parameter A and the thermal expansion parameter B satisfy the above ranges.
  • the glass 10 contains SiO 2 (the content of SiO 2 is higher than 0 mol%).
  • the content of SiO 2 in the glass 10 is preferably 70.0% or more, more preferably 70.0% or more and 80.0% or less, and 72.0% by mole based on oxides. % or more and 78.0% or less, and even more preferably 73.5% or more and 75.0% or less.
  • the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain B 2 O 3 (the content of B 2 O 3 is 0 mol %), but it may contain B 2 O 3 (the content of B 2 O 3 is higher than 0 mol %). preferable.
  • the content of B 2 O 3 in the glass 10 is preferably 0.1% or more and 15.0% or less, and preferably 0.5% or more and 10.0% or less, expressed as mol% based on oxides. It is more preferably 1.0% or more and 5.0% or less. When the content of B 2 O 3 falls within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain Al 2 O 3 (the content of Al 2 O 3 is 0 mol %), but it may contain Al 2 O 3 (the content of Al 2 O 3 is higher than 0 mol %). preferable.
  • the content of Al 2 O 3 in the glass 10 is preferably 0.0% or more and 5.0% or less, and preferably 0.1% or more and 3.9% or less, expressed as mol% based on oxides. It is more preferably 1.0% or more and 3.0% or less, even more preferably 0.8% or more and 2.5% or less. When the content of Al 2 O 3 falls within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain MgO (MgO content is 0 mol%), but preferably contains MgO (MgO content is higher than 0 mol%).
  • Glass 10 preferably has an MgO content of 5.0% or more, more preferably 5.0% or more and 15.0% or less, expressed as mol% based on oxides, and 6.3 % or more and 14.8% or less, still more preferably 8.0% or more and 14.6% or less, still more preferably 10.0% or more and 14.4% or less, 12. It is more preferably 0% or more and 14.2% or less. When the content of MgO falls within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain CaO (CaO content is 0 mol%), but preferably contains CaO (CaO content is higher than 0 mol%).
  • Glass 10 preferably has a CaO content of 0.0% or more and 20.0% or less, more preferably 0.1% or more and 15.0% or less, expressed as mol% based on oxides. It is preferably 0.2% or more and 10.0% or less, even more preferably 0.3% or more and 5.0% or less. When the content of CaO is within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain BaO (the BaO content is 0 mol%), it is preferable that it contains BaO (the BaO content is higher than 0 mol%).
  • the glass 10 preferably has a BaO content of 0.0% or more and 10.0% or less, more preferably 0.1% or more and 8.0% or less, expressed as mol% based on oxides. It is preferably 0.1% or more and 5.0% or less, even more preferably 0.1% or more and 3.0% or less. When the BaO content is within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain Na 2 O (Na 2 O content is 0 mol %), but preferably contains Na 2 O (Na 2 O content is higher than 0 mol %).
  • the content of Na 2 O in the glass 10 is preferably 0.0% or more and 8.9% or less, and preferably 0.1% or more and 8.0% or less, expressed as mol% based on oxides. is more preferable, more preferably 0.3% or more and 7.0% or less, even more preferably 1.0% or more and 6.5% or less. When the content of Na 2 O is within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain K 2 O (K 2 O content is 0 mol %), but preferably contains K 2 O (K 2 O content is higher than 0 mol %).
  • the content of K 2 O in the glass 10 is preferably 0.0% or more and 8.9% or less, and preferably 0.1% or more and 8.0% or less, expressed as mol% based on oxides. is more preferable, more preferably 0.3% or more and 6.5% or less, even more preferably 1.0% or more and 5.5% or less.
  • the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain SrO (SrO content is 0 mol%), but preferably contains SrO (SrO content is higher than 0 mol%).
  • the content of SrO in the glass 10 is preferably 0.0% or more and 8.9% or less, more preferably 0.1% or more and 7.0% or less, expressed as mol% based on oxides. It is preferably 0.15% or more and 5.0% or less, even more preferably 0.15% or more and 3.0% or less. When the SrO content is within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain Li 2 O (the content of Li 2 O is 0 mol %), but it may also contain Li 2 O (the content of Li 2 O is higher than 0 mol %). If a large amount of Li 2 O is contained, vitrification becomes difficult, so it is preferable not to contain a large amount of Li 2 O.
  • the content of Li 2 O in the glass 10 is preferably 0.1% or more and 15.0% or less, and preferably 0.3% or more and 10.0% or less, expressed as mol% based on oxides. is more preferable, and even more preferably 1.0% or more and 8.0% or less. When the content of Li 2 O falls within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the glass 10 may not contain R 2 O (R 2 O content is 0 mol %), but preferably contains R 2 O (R 2 O content is higher than 0 mol %).
  • the content of R 2 O in the glass 10 is preferably 0.1% or more and 15.0% or less, and preferably 0.3% or more and 10.0% or less, expressed as mol% based on oxides. is more preferable, and even more preferably 1.0% or more and 8.0% or less.
  • the content of R 2 O falls within this range, the resistance of the glass 10 can be lowered and the coefficient of thermal expansion can be lowered.
  • the content of R 2 O refers to the total content of oxides of monovalent elements contained in the glass 10.
  • the glass 10 preferably does not include a sintered body. That is, it is preferable that the glass 10 is a glass that is not a sintered body.
  • the sintered body here refers to a member in which a plurality of particles are heated at a temperature lower than the melting point to bond the particles together.
  • a sintered body contains pores and therefore has a high porosity to some extent, but the glass 10 is not a sintered body and therefore has a low porosity, usually 0%. However, it is permissible to include a small amount of unavoidable pores.
  • the porosity here is the so-called true porosity, which is the sum of the volumes of pores that communicate with the outside (pores) and pores that do not communicate with the outside, divided by the total volume (apparent volume). indicates the value. Porosity can be measured, for example, according to JIS R 1634.
  • the glass used for the glass 10 is normally amorphous glass, that is, an amorphous solid. Further, this glass may be a crystallized glass containing crystals on the surface or inside, but from the viewpoint of density, amorphous glass is preferable. Among ceramics, those produced by sintering have low transmittance and high density, so it is preferable not to use them.
  • the glass 10 is a plate-shaped glass substrate including a first surface 12 as one surface and a second surface 14 as the other surface.
  • the second surface 14 is a surface opposite to the first surface 12, and is, for example, parallel to the first surface 12.
  • the glass 10 may have a circular disk shape when viewed from above, that is, from a direction perpendicular to the first surface 12, but is not limited to the disk shape and may have any shape, for example. It may be a polygonal plate such as a rectangle. Note that the above-mentioned shapes also include those in which a cutout such as a notch or an orientation flat is provided on the outer periphery.
  • the thickness D of the glass 10, that is, the length between the first surface 12 and the second surface 14, is preferably 0.1 mm to 5.0 mm, and preferably 0.1 mm to 2.0 mm. More preferably, it is 0.1 mm to 0.5 mm.
  • the thickness D is preferably 0.1 mm to 5.0 mm, and preferably 0.1 mm to 2.0 mm. More preferably, it is 0.1 mm to 0.5 mm.
  • the average thermal expansion coefficient CTE of the glass 10 at 50°C to 200°C is preferably 6.0 ppm/°C or less, more preferably 3.0 ppm/°C or more and 5.5 ppm/°C or less, 3. More preferably, it is 0 ppm/°C or more and 5.3 ppm/°C or less.
  • the glass 10 can have low thermal expansion and breakage can be suppressed.
  • the average coefficient of thermal expansion CTE can be measured in accordance with DIN-51045-1 as a standard for thermal expansion measurement.
  • the sample was measured in the range of 30°C to 300°C using a NETZSCH dilatometer (DIL 402 Expedis) as a measuring device, and the average coefficient of thermal expansion in the range of 50°C to 200°C was determined. , the average coefficient of thermal expansion CTE.
  • DIL 402 Expedis NETZSCH dilatometer
  • the glass 10 preferably has a Young's modulus of 65 GPa or more, more preferably 70 GPa or more. When the Young's modulus falls within this range, damage can be suppressed.
  • the Young's modulus of the glass 10 can be measured based on the propagation of ultrasonic waves using 38DL PLUS manufactured by OLYMPUS.
  • the glass 10 has acid resistance. It is preferable that the glass 10 passes the acid resistance evaluation specified in Examples described below. Glass 10 is particularly preferable as, for example, a supporting glass substrate because it has acid resistance.
  • the glass 10 preferably has a transmittance of light (ultraviolet rays) with a wavelength of 308 nm, that is, a UV transmittance of 50% or more, more preferably 70% or more.
  • a transmittance of light with a wavelength of 308 nm falls within this range, ultraviolet rays can be appropriately transmitted, which is particularly preferable as a support glass substrate.
  • the transmittance of light with a wavelength of 308 nm can be measured, for example, by measuring a spectral transmittance curve using an ultraviolet-visible spectrophotometer (manufactured by Hitachi High-Tech Corporation (model UH4150)).
  • FIG. 2 is a schematic diagram showing an electrode pattern.
  • a glass plate is processed into a plate shape of 50 mm x 50 mm x 0.7 mm, and an electrode pattern PT shown in FIG. 2 is formed on one surface.
  • the electrode pattern PT has an annular shape with an inner diameter PT1 of 38 mm and an outer diameter PT2 of 40 mm.
  • the impedance at 20 MHz to 2 MHz is measured using an impedance analyzer to determine the complex admittance.
  • a 1 , B 1 , A 2 , and B 2 in equation (1) are the values shown in equations (2) to (5).
  • the glass 10 may be manufactured by any method, for example, it is manufactured by the following method. First, raw materials such as silica sand and soda ash, which are raw materials for the compounds contained in the glass 10, are heated and melted at a predetermined temperature (for example, 1500° C. to 1600° C.). Then, after clarifying the molten raw material (glass), a molding process is performed to form it into a plate shape. The shaped glass has the composition range of glass 10 described above on an oxide basis. Then, the glass 10 is manufactured by performing a slow cooling process on the glass formed in the forming process. In addition, the manufacturing method of the glass 10 is not limited to the above, and may be arbitrary. For example, a slow cooling step is not essential.
  • various methods can be adopted for the molding process when manufacturing the glass 10, such as a melt casting method, a down-draw method (for example, an overflow down-draw method, a slot-down method, a re-draw method, etc.), a float method, Examples include the roll-out method and the press method.
  • a melt casting method for example, an overflow down-draw method, a slot-down method, a re-draw method, etc.
  • a float method examples include the roll-out method and the press method.
  • FOWLP manufacturing a plurality of semiconductor chips are bonded together on glass 10 and the semiconductor chips are covered with a sealing material to form an element substrate. Then, the glass 10 and the element substrate are separated, and the side of the element substrate opposite to the semiconductor chip is bonded onto another glass 10, for example. Then, wiring, solder bumps, etc. are formed on the semiconductor chip, and the element substrate and the glass 10 are separated again. Then, by cutting the element substrate into individual semiconductor chips, a semiconductor device is obtained.
  • the glass 10 according to the present embodiment has a conductivity parameter A of 1.3 or more and a thermal expansion parameter B of 2.0 or less.
  • glass may be required to have a low coefficient of thermal expansion and a low electrical resistance.
  • the conductivity parameter A and the thermal expansion parameter B are within the above ranges, so that the electrical resistance can be lowered while the coefficient of thermal expansion is lowered.
  • it is required to suppress deflection at high temperatures and to be difficult to charge.
  • the glass 10 according to the present embodiment has a conductivity parameter A within the above range, resulting in low resistance and is difficult to be charged, and a thermal expansion parameter B within the above range, which increases the coefficient of thermal expansion. It can be lowered to suppress deflection at high temperatures. Furthermore, glass may be required to have acid resistance. On the other hand, the glass 10 according to the present embodiment can also achieve acid resistance because the thermal expansion parameter B is within the above range.
  • the glass 10 according to the present embodiment is made of monovalent element oxides, SiO 2 , The content of Al 2 O 3 and the like are set. Therefore, the glass 10 according to the present embodiment can achieve both low resistance and low thermal expansion by balancing low resistance and low thermal expansion.
  • the glass 10 has a thermal expansion parameter B of 1.74 or less.
  • the thermal expansion parameter B falls within this range, the coefficient of thermal expansion can be lowered more suitably.
  • the glass 10 contains B2O3 .
  • B 2 O 3 it is possible to lower the thermal expansion coefficient and lower the electrical resistance.
  • the glass 10 contains MgO. By including MgO, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion.
  • the glass 10 has an MgO content of 5.0% or more in terms of mol% based on oxides.
  • MgO content falls within this range, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion.
  • the content of SiO 2 in the glass 10 is 70.0% or more in terms of mol% based on oxides.
  • the content of SiO 2 falls within this range, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion.
  • Glass 10 is expressed in mol% based on oxides, SiO 2 :70.0% to 80.0%, B 2 O 3 : 0.1% to 15.0%, Al2O3 : 0.0% to 5.0%, MgO: 5.0% to 15.0%, CaO: 0% to 20%, BaO: 0% to 10%, Na 2 O: 0% to 8.9%, K 2 O: 0% to 8.9%, SrO: 0% to 10%, It is preferable to contain. By having the content of each component within this range, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion. Note that the numerical range represented by " ⁇ " means a numerical range that includes the numbers before and after ⁇ as the lower limit and upper limit, and when " ⁇ " is used hereinafter, it refers to the same meaning.
  • the glass 10 has an average coefficient of thermal expansion CTE of 6.0 ppm/°C or less at 50° C. to 200° C., and a resistivity of 8.0 ⁇ cm ⁇ 1 or less at 250° C. By having the average coefficient of thermal expansion and resistivity within this range, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion.
  • the glass 10 is amorphous glass. By using amorphous glass, it is possible to lower the electrical resistance while lowering the coefficient of thermal expansion.
  • the glass 10 is preferably used as a substrate and is preferably used in the manufacture of at least one of a fan-out wafer level package and a fan-out panel level package. Glass 10 is suitably used for these purposes.
  • glasses with different compositions were produced.
  • a blank plate with a diameter of 320 mm and a thickness of 6 mm was manufactured using a melt casting method.
  • a plurality of plates each having a diameter of 300 mm and a thickness of 3 mm were cut out from the center of the blank plate. Both sides of these plates were polished using cerium oxide as an abrasive to obtain glass.
  • Table 1 is a table showing the characteristics of the glasses of each example. Table 1 shows the content expressed in mol% based on oxides, the conductivity parameter A, and the thermal expansion parameter B of the materials used for producing the glasses for Examples 1 to 14 and Examples 15 to 21. It shows. The conductivity parameter A and the thermal expansion parameter B were calculated by the method described in the above embodiment.
  • the thermal expansion coefficient and resistivity of each glass were evaluated.
  • the coefficient of thermal expansion the average coefficient of thermal expansion CTE at 50°C to 200°C was measured.
  • the average coefficient of thermal expansion CTE at 50° C. to 200° C. was measured using a dilatometer (DIL 402 Expedis) manufactured by NETZSCH.
  • resistivity ⁇ at 250° C. was measured and log ⁇ was calculated.
  • the resistivity at 250°C was measured using a high temperature volume resistance measuring device. Each measurement value is shown in Table 1. Note that the values in parentheses in the table were determined by calculation.
  • the average coefficient of thermal expansion CTE at 50°C to 200°C is 6.0 ppm/°C or less and the resistivity at 250°C is 8.0 ⁇ cm-1 or less, it is considered to be acceptable. , Those that did not satisfy at least one of them were rejected.
  • the glasses of Examples 7 to 14 according to comparative examples that do not satisfy at least one of the conductivity parameter A of 1.3 or more and the thermal expansion parameter B of 2.0 or less are rejected, and the thermal expansion coefficient It can be seen that it is not possible to lower the electrical resistance while lowering the resistance.
  • Young's modulus, acid resistance, UV transmittance, and hopping frequency were measured. Young's modulus was measured based on ultrasonic propagation using 38DL PLUS manufactured by OLYMPUS. Acid resistance was determined by immersing the glass in 0.1 mol% hydrochloric acid held at 90° C. for 20 hours, and calculating the ratio of the weight decreased after immersion to the weight before immersion in hydrochloric acid. A case where the ratio was 0.1% or more was judged as a pass, and a case where the ratio was less than 0.1% was judged as a failure.
  • UV transmittance refers to the transmittance of light (ultraviolet light) with a wavelength of 308 nm.
  • the UV transmittance was measured by measuring a spectral transmittance curve using an ultraviolet-visible spectrophotometer (manufactured by Hitachi High-Tech Corporation (Model UH4150)).
  • the hopping frequency was determined by forming the electrode pattern shown in Fig. 2 on a glass plate of 50 mm x 50 mm x 0.7 mm, and using an impedance analyzer (Precision LCR meter E4980A and 16451B dielectric Complex admittance was measured using a body test fixture, attached electrode A). From the obtained complex admittance value, the hopping frequency ⁇ p was calculated, and the logarithm log ⁇ p of the hopping frequency ⁇ p was calculated. The results of each measurement are shown in Table 1.
  • the embodiment of the present invention has been described above, the embodiment is not limited by the content of this embodiment. Furthermore, the above-mentioned components include those that can be easily assumed by those skilled in the art, those that are substantially the same, and those that are in a so-called equivalent range. Furthermore, the aforementioned components can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the constituent elements can be made without departing from the gist of the embodiments described above.

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11240735A (ja) * 1998-02-27 1999-09-07 Asahi Glass Co Ltd 基板として用いるためのガラス組成物
JPH11314933A (ja) * 1998-02-27 1999-11-16 Asahi Glass Co Ltd 基板用ガラス組成物
WO2008001555A1 (fr) * 2006-06-30 2008-01-03 Asahi Glass Company, Limited Panneau d'affichage à cristaux liquides
WO2009060871A1 (ja) * 2007-11-06 2009-05-14 Asahi Glass Company, Limited 基板用ガラス板
JP2010228969A (ja) * 2009-03-27 2010-10-14 Ohara Inc ガラス
JP2013028512A (ja) * 2011-07-29 2013-02-07 Asahi Glass Co Ltd 基板用ガラスおよびガラス基板
WO2015087812A1 (ja) * 2013-12-11 2015-06-18 旭硝子株式会社 発光ダイオードパッケージ用カバーガラス、封着構造体および発光装置
WO2019021911A1 (ja) * 2017-07-26 2019-01-31 Ａｇｃ株式会社 半導体パッケージ用支持ガラス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11240735A (ja) * 1998-02-27 1999-09-07 Asahi Glass Co Ltd 基板として用いるためのガラス組成物
JPH11314933A (ja) * 1998-02-27 1999-11-16 Asahi Glass Co Ltd 基板用ガラス組成物
WO2008001555A1 (fr) * 2006-06-30 2008-01-03 Asahi Glass Company, Limited Panneau d'affichage à cristaux liquides
WO2009060871A1 (ja) * 2007-11-06 2009-05-14 Asahi Glass Company, Limited 基板用ガラス板
JP2010228969A (ja) * 2009-03-27 2010-10-14 Ohara Inc ガラス
JP2013028512A (ja) * 2011-07-29 2013-02-07 Asahi Glass Co Ltd 基板用ガラスおよびガラス基板
WO2015087812A1 (ja) * 2013-12-11 2015-06-18 旭硝子株式会社 発光ダイオードパッケージ用カバーガラス、封着構造体および発光装置
WO2019021911A1 (ja) * 2017-07-26 2019-01-31 Ａｇｃ株式会社 半導体パッケージ用支持ガラス

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