WO2023167810A1 - Silicon-containing layers with reduced hydrogen content and processes of making them - Google Patents
Silicon-containing layers with reduced hydrogen content and processes of making them Download PDFInfo
- Publication number
- WO2023167810A1 WO2023167810A1 PCT/US2023/013865 US2023013865W WO2023167810A1 WO 2023167810 A1 WO2023167810 A1 WO 2023167810A1 US 2023013865 W US2023013865 W US 2023013865W WO 2023167810 A1 WO2023167810 A1 WO 2023167810A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- layer
- less
- containing layer
- deposition
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 126
- 239000010703 silicon Substances 0.000 title claims abstract description 126
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 239000001257 hydrogen Substances 0.000 title claims abstract description 73
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000008569 process Effects 0.000 title description 22
- 238000000151 deposition Methods 0.000 claims abstract description 106
- 239000007789 gas Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 230000008021 deposition Effects 0.000 claims abstract description 83
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 58
- 238000012545 processing Methods 0.000 claims abstract description 41
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 21
- 238000003672 processing method Methods 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 31
- 238000006356 dehydrogenation reaction Methods 0.000 description 28
- 238000009826 distribution Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
Definitions
- the deposition gases include a silicon- containing gas and a hydrogen gas.
- a deposition plasma is generated from the deposition gases in the substrate processing region.
- the methods further include depositing a silicon-containing layer on a substrate form the deposition plasma, where the silicon-containing layer is characterized by a hydrogen content of less than or about 6 at.% hydrogen.
- the methods also include forming an
- Embodiments of the present technology still further include silicon-containing structures.
- the structures include a substrate and a silicon-containing layer positioned on the substrate, where
- the present technology uses faster deposition rates and higher hydrogen gas to silicon-containing gas flow rate ratios to form an as-deposited silicon- containing layer with a lower hydrogen content.
- the faster deposition rates permit the formation of the silicon-containing layers in shorter deposition times.
- the substrate processing chambers 108a-f may include one or more system components for depositing, treating, annealing, curing and/or etching barrier layer materials on the substrate.
- two pairs of the processing chambers e.g., 108c-d and 108e-f, may be used to deposit and treat barrier layer materials on the substrate, and the third pair of processing
- the edge to center spacing may be controlled so that the film property distribution uniformity may be 15 controlled between the edge and center of the substrate.
- a concave curved edge of the gas distribution plate 115 may be used so the center portion of the edge of the gas distribution plate 115 is spaced farther from the upper surface 118 of the substrate 102 than the corners of the gas distribution plate 115.
- a convex curved edge of the gas distribution plate 115 may be used so that the corners of the gas distribution plate 115 are 20 spaced farther than the edges of the gas distribution plate 115 from the upper surface 118 of the substrate 102.
- Method 200 may also include forming an amorphous silicon layer on the silicon- containing layer at operation 220.
- the amorphous silicon layer may function as a cap on the previously formed silicon-containing layer to reduce or prevent the absorption of
- the dehydrogenation operation may include quenching the deposition
- the silicon-containing layer 304 may be characterized as including greater than or about 20 vo.% microcrystalline silicon.
- the amorphous silicon layer may be characterized as having less than or about 5 vol.% microcrystalline silicon.
- the silicon layers 304 and 306 may be characterized as having less than or about 6 at.% hydrogen, less than or about 5.5 at.% hydrogen, less than or about 5 at.% hydrogen, or less.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263316479P | 2022-03-04 | 2022-03-04 | |
| US63/316,479 | 2022-03-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023167810A1 true WO2023167810A1 (en) | 2023-09-07 |
Family
ID=87884188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2023/013865 WO2023167810A1 (en) | 2022-03-04 | 2023-02-24 | Silicon-containing layers with reduced hydrogen content and processes of making them |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2023167810A1 (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120003787A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device |
| US20120193632A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Silicon structure and manufacturing methods thereof and of capacitor including silicon structure |
| US20160268319A1 (en) * | 2014-06-30 | 2016-09-15 | Boe Technology Group Co., Ltd. | Low temperature polycrystalline silicon tft array substrate and method of producing the same, display apparatus |
| US20190096673A1 (en) * | 2017-09-25 | 2019-03-28 | Samsung Electronics Co., Ltd. | Apparatus for forming a layer on a substrate and method of forming an amorphous silicon layer on a substrate using the same |
| US20220020583A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Hydrogen management in plasma deposited films |
-
2023
- 2023-02-24 WO PCT/US2023/013865 patent/WO2023167810A1/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120003787A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing Method of Semiconductor Film, Manufacturing Method of Semiconductor Device, and Manufacturing Method of Photoelectric Conversion Device |
| US20120193632A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Silicon structure and manufacturing methods thereof and of capacitor including silicon structure |
| US20160268319A1 (en) * | 2014-06-30 | 2016-09-15 | Boe Technology Group Co., Ltd. | Low temperature polycrystalline silicon tft array substrate and method of producing the same, display apparatus |
| US20190096673A1 (en) * | 2017-09-25 | 2019-03-28 | Samsung Electronics Co., Ltd. | Apparatus for forming a layer on a substrate and method of forming an amorphous silicon layer on a substrate using the same |
| US20220020583A1 (en) * | 2020-07-19 | 2022-01-20 | Applied Materials, Inc. | Hydrogen management in plasma deposited films |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202400831A (zh) | 2024-01-01 |
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