WO2023165215A1 - 一种led灯珠及背光灯条 - Google Patents

一种led灯珠及背光灯条 Download PDF

Info

Publication number
WO2023165215A1
WO2023165215A1 PCT/CN2022/138558 CN2022138558W WO2023165215A1 WO 2023165215 A1 WO2023165215 A1 WO 2023165215A1 CN 2022138558 W CN2022138558 W CN 2022138558W WO 2023165215 A1 WO2023165215 A1 WO 2023165215A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting
chip
emitting chip
led lamp
Prior art date
Application number
PCT/CN2022/138558
Other languages
English (en)
French (fr)
Inventor
张汝楠
许怀书
李鹏飞
李健林
Original Assignee
惠州视维新技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠州视维新技术有限公司 filed Critical 惠州视维新技术有限公司
Publication of WO2023165215A1 publication Critical patent/WO2023165215A1/zh

Links

Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00Fastening of light sources or lamp holders
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00Arrangement of electric circuit elements in or on lighting devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]

Definitions

  • the present application relates to the technical field of LED backlights, in particular to an LED lamp bead and a backlight light bar.
  • LED backlight has become the mainstream of the market. Compared with traditional CCFL backlight, LED backlight has many advantages such as color gamut, high brightness, long life, energy saving and environmental protection, and adjustable color.
  • the current mainstream method is to use blue light chips and green light chips to live at both ends of the bracket respectively, and then make the light emitted by the blue light chip and green light chip respectively activate the red phosphor, and mix with the red light to emit uniform white light.
  • the area far away from the center of the blue chip will only excite the red phosphor and mix with the red light, showing reddish light, and the part of the green chip far away from the center will show greenish light.
  • the middle part is white light, which will cause the light emitted by the blue-green chip to not be fully mixed in the bracket when the light mixing method of red phosphor is used, and the color of the LED will be uneven after the light is emitted, and uniform light cannot be emitted.
  • the present application provides a new LED lamp bead and a backlight light bar.
  • an LED lamp bead including:
  • a first light-emitting chip and at least two second light-emitting chips, the first light-emitting chip and the second light-emitting chip are distributed in the bracket, and the second light-emitting chip is arranged on the side of the first light-emitting chip part, and the second light-emitting chip is center-symmetrically arranged around the first light-emitting chip;
  • the light conversion layer is used to emit red light, and is arranged on the light emitting sides of the first light emitting chip and the second light emitting chip.
  • each of the first light-emitting chips is correspondingly provided with an even number of the second light-emitting chips to form a first chip module, and in the first chip module, each of the The second light-emitting chips are respectively arranged in pairs on both sides of the first light-emitting chip.
  • the bracket is cup-shaped and includes a bottom wall and an inner side wall surrounding the edge of the bottom wall, at least part of the inner side wall is formed from the side connected to the bottom wall It starts to extend obliquely toward a direction away from the second light-emitting chip.
  • both the first light-emitting chip and the second light-emitting chip are disposed on the bottom wall.
  • the first light-emitting chip and the second light-emitting chip are connected in parallel.
  • a plurality of the second light-emitting chips are also connected in parallel, and a variable resistor is arranged in series on each parallel branch.
  • the first chip module includes one first light-emitting chip and two second light-emitting chips respectively arranged on both sides of the first light-emitting chip, so
  • the inner sidewall includes a first inner sidewall and a second inner sidewall perpendicular to the first inner sidewall, the first inner sidewall is located on the side of the second light-emitting chip away from the first light-emitting chip, and
  • the side where the bottom wall is connected begins to extend obliquely toward a direction away from the second light-emitting chip; the second inner sidewall is perpendicular to the bottom wall.
  • each of the first light-emitting chips is connected in parallel with at least two of the second light-emitting chips, and two or more The chip modules are connected in parallel.
  • each of the first light-emitting chips is correspondingly provided with an odd number of the second light-emitting chips to form a second chip module, and in the second chip module, the The number of the second light-emitting chips is at least three, and each of the second light-emitting chips is equidistantly distributed around the side of the first light-emitting chip.
  • one of the first light-emitting chips is connected in parallel with at least three of the second light-emitting chips.
  • At least two of the second light-emitting chips are connected in parallel to form a chip string, and the chip string is connected in series with the first light-emitting chip.
  • the luminous intensity of the first light-emitting chip is greater than the luminous intensity of the second light-emitting chip.
  • the first light-emitting chip is a blue light chip with a main wavelength of 447-455nm
  • the second light-emitting chip is a green light chip with a main wavelength of 527-535nm.
  • the light conversion layer includes: red phosphor and encapsulating glue, the red phosphor is mixed with the encapsulating glue, and the red phosphor is fixed in the encapsulating glue.
  • a conductive pad is provided in the bracket, and the first light-emitting chip and the second light-emitting chip are connected to the pad through a gold wire.
  • the present application provides a backlight light bar, including the LED light bead as described in the first aspect.
  • the backlight board further includes: a PCB board, the LED lamp beads are installed on the PCB board, and the PCB board is provided with terminals for connecting with an external power supply
  • the application at least includes beneficial effects:
  • the present application provides an LED lamp bead and a backlight light strip.
  • the purpose of uniform light mixing is achieved.
  • at least two second light-emitting chips are arranged on the side of the first light-emitting chip, and the second light-emitting chips are distributed around the first light-emitting chip and arranged symmetrically in the center, so as to ensure that the first light-emitting chip is far away from one of them.
  • the light emitted by one end of the second light-emitting chip can still be mixed with the light emitted by another second light-emitting chip, so that the light emitted by the first light-emitting chip can be as close as possible to the light emitted by the second light-emitting chip no matter what angle. Mix evenly; a light conversion layer for emitting red light is provided on the light-emitting side of the first light-emitting chip and the second light-emitting chip, so that the light emitted by the first light-emitting chip and the second light-emitting chip can also be mixed evenly with the red light to achieve no miscellaneous Uniform emission of colored light.
  • Figure 1 is a schematic plan view of the bracket in Example 1 of the present application.
  • FIG. 2 is a schematic diagram of a parallel connection arrangement structure of one first light-emitting chip corresponding to two second light-emitting chips in Embodiment 1 of the present application;
  • Fig. 3 is a schematic side view of Fig. 2;
  • Example 4 is a schematic diagram of the arrangement structure of the first light-emitting chip and the second light-emitting chip connected in series in Example 1 of the present application;
  • FIG. 5 is a schematic diagram of the arrangement structure of one first light-emitting chip corresponding to three second light-emitting chips in Embodiment 1 of the present application.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or indicating the quantity of the indicated technical features.
  • features defined as “first” and “second” may explicitly or implicitly include one or more features.
  • “plurality” means two or more, unless otherwise specifically defined.
  • an LED lamp bead which specifically includes:
  • the first light-emitting chip 4 and at least two second light-emitting chips 5, the first light-emitting chip 4 and the second light-emitting chip 5 are distributed in the bracket 1, the second light-emitting chip 5 is arranged on the side of the first light-emitting chip 4, and The second light-emitting chip 5 is center-symmetrically arranged around the first light-emitting chip 4;
  • the light conversion layer 8 is arranged on the light emitting side of the first light emitting chip 4 and the second light emitting chip 5 , and the light emitted by the first light emitting chip 4 , the second light emitting chip 5 and the light conversion layer 8 can be mixed to produce white light.
  • the aforementioned first light-emitting chip 4 is a blue chip that emits blue light
  • the second light-emitting chip 5 is a green chip that emits green light; or the aforementioned first light-emitting chip 4 is a green chip that emits green light.
  • the second light emitting chip 5 is a blue light emitting chip.
  • the wavelengths of both the blue light chip and the green light chip can excite the light conversion layer 8 to make it emit red light, and then the blue light emitted by the blue light chip, the green light emitted by the green light chip, and the light emitted by the light conversion layer 8 are excited.
  • the three kinds of red light are evenly mixed, so that the LED lamp beads emit uniform white light.
  • the light conversion layer 8 specifically includes red phosphor and encapsulation glue, the red phosphor is mixed with the encapsulation glue, and then the red phosphor is fixed to the encapsulation by baking.
  • the glue and arranged on the light-emitting side of the first light-emitting chip 4 and the second light-emitting chip 5, the light emitted by the light-emitting chip conforms to the excitation wavelength to excite the red phosphor to emit red light.
  • At least two second light-emitting chips 5 are arranged around the first light-emitting chip 4, and the second light-emitting chips 5 are centered symmetrically around the first light-emitting chip 4, so that the first light-emitting chip 4
  • the light emitted by the second light-emitting chip 5 can mix the light emitted by the first light-emitting chip 4 with the light emitted by the second light-emitting chip 5 to the greatest extent on the premise of using the same second light-emitting chip 5, so as to avoid the occurrence of the first light-emitting Part of the light from the chip 4 cannot be mixed with the light emitted by the second light-emitting chip 5 , especially the light emitted by the part of the first light-emitting chip 4 away from the second light-emitting chip 5 .
  • the first light-emitting chip 4 and the second light-emitting chip 5 such as the first way: one first light-emitting chip 4 is set, and then The sides of the first light emitting chip 4 are surrounded by an even number of second light emitting chips 5 to form a first chip module.
  • the first chip module an even number of second light-emitting chips 5 are in pairs, and each pair of second light-emitting chips 5 is respectively arranged on both sides of the first light-emitting chip 4 , and is arranged on paired sides.
  • Such an arrangement can make up for the lack of light from the first light-emitting chip 4 on the side away from the second light-emitting chip 5 in the prior art and the mixing of the light emitted by the second light-emitting chip 5.
  • the second light-emitting chip 5 realizes uniform light mixing between the first light-emitting chip 4 and the second light-emitting chip 5 .
  • the specific number of the first light-emitting chip 4 and the second light-emitting chip 5 is one first light-emitting chip 4 and two second light-emitting chips 5, that is, two second light-emitting chips 5 can be arranged correspondingly on both sides of one first light-emitting chip 4 .
  • the support 1 for accommodating each light-emitting chip and the light conversion layer 8 is cup-shaped, and the cross-sectional area of the cup-shaped support 1 is not limited, it can be Square, round, strip or other regular shapes.
  • the cross-sectional shape of the bracket 1 is square, specifically including the bottom wall 3 and the inner side wall 2 around the edge of the bottom wall 3, at least part of the inner side wall 2 starts from the side connected to the bottom wall 3 toward The direction away from the second light-emitting chip 5 is inclined and extended, so that when the LED lamp bead emits the mixed light, the light emission effect is better, the light has a certain diffusion effect, and the irradiation range is wider.
  • the number and position of the inclined inner sidewall 2 are specifically set according to the arrangement and distribution position between the first light-emitting chips 4 and the second light-emitting chips 5 .
  • the first chip module includes a first light-emitting chip 4 and two second light-emitting chips 5
  • the first light-emitting chip 4 is located between the two second light-emitting chips 5, and the two second light-emitting chips
  • the light-emitting chips 5 are arranged oppositely, that is, the first light-emitting chips 4 and the second light-emitting chips 5 are arranged in a straight line.
  • the first inner sidewall extends obliquely from the side connected to the bottom wall 3 toward the direction away from the second light-emitting chip 5, which can achieve better light emission and a wider diffusion range without affecting the first light emission.
  • the light emitted by the chip 4 is mixed with the light emitted by the second light emitting chip 5 .
  • both the first light-emitting chip 4 and the second light-emitting chip 5 are arranged on the bottom wall 3 of the support 1, so that the first light-emitting chip 4 and the second light-emitting chip 5 are all on the same plane, ensuring The light emitted by the first light-emitting chip 4 can be directly mixed with the second light-emitting chip 5 from the exit stage, and the light between the two chips will not be mixed in the height direction due to the difference in height of the two chips, and even cause light blocking. Furthermore, restricting the first light-emitting chip 4 and the second light-emitting chip 5 on the same bottom wall 3 also facilitates subsequent routing of the chips. Further, a conductive pad 6 is also provided in the bracket 1, and the light-emitting chip is connected to the pad 6 through a gold wire 7, which is convenient for subsequent wiring connection.
  • first light-emitting chip 4 for another arrangement of the first light-emitting chip 4 and the second light-emitting chip 5, that is, one first light-emitting chip 4 is correspondingly provided with an odd number of second light-emitting chips 5, so that A second chip module is formed. And in the second chip module, there are at least three second light-emitting chips 5 , and each second light-emitting chip 5 is equidistantly distributed around the side of the first light-emitting chip 4 .
  • an example is given as follows:
  • the second chip module in the second chip module, one first light-emitting chip 4 is selected, three second light-emitting chips 5 are selected, and the three second light-emitting chips 5 are arranged around the side of the first light-emitting chip 4 .
  • the connection lines between the three second light-emitting chips 5 form an equilateral triangle, and the light emitted by the first light-emitting chip 4 can be mixed with the light emitted by the second light-emitting chip 5 within a range of 360°, so as to avoid the first light-emitting
  • the light at the edge of the chip 4 in a certain direction cannot be mixed with the light emitted by the second light-emitting chip 5 .
  • the light emitted by the first light-emitting chip 4 , the second light-emitting chip 5 and the light conversion layer 8 can be fully mixed to obtain white light without noise.
  • One light-emitting chip 4 corresponds to three second light-emitting chips 5, which adopts an odd number of second light-emitting chips 5, which uses the least number of second light-emitting chips 5, and is also the simplest arrangement method, and the wiring method is also relatively Other odd arrangements are simpler.
  • two second light-emitting chips 5 are arranged on both sides of a first light-emitting chip 4.
  • first light-emitting chip 4 corresponds to two second light-emitting chips 5 .
  • the light-mixing effect of this method is still worse.
  • the second inner side wall is set to be perpendicular to the bottom wall 3 or inclined at a certain angle toward the chip direction, so as to reduce the number of first light-emitting chips 4 on both sides where the second light-emitting chip 5 is not set.
  • the range of light output is to compress the light as close as possible to the range close to the second light emitting chip 5 .
  • the luminous intensity of the first light emitting chip 4 is greater than that of the second light emitting chip 5 to ensure that the light emitted by the first light-emitting chip 4 can cover the light emitted by the edge of the second light-emitting chip 5 away from the first light-emitting chip 4 .
  • the luminous intensity of the first light-emitting chip 4 is greater than the luminous intensity of the second light-emitting chip 5, such as by selecting the first light-emitting chip 4 and the second light-emitting chip 5 with different luminous intensities such as power and material; It can also be realized by changing the circuit connection method. The method of changing the light intensity of the light-emitting chip through the circuit connection is explained below:
  • the first connection method in the first chip module or the second chip module, the first light-emitting chip 4 and the second light-emitting chip 5 are connected in parallel, and the plurality of second light-emitting chips 5 are also connected in parallel. It is also connected in parallel, and a variable resistor is set in series on each parallel branch or the resistance of the selected second light-emitting chip 5 is greater than the resistance of the first light-emitting chip 4. By adjusting the variable resistor, the first light-emitting chip can be realized.
  • the magnitude of the current passing through the chip 4 and the second light-emitting chip 5 is adjusted, so as to realize the adjustment of the light intensity emitted by the first light-emitting chip 4 and the second light-emitting chip 5 .
  • Adjusting the light intensity of the first light-emitting chip 4 to be greater than the light intensity of the second light-emitting chip 5 is beneficial for the light emitted by the first light-emitting chip 4 to cover the light emitted by the second light-emitting chip 5 as much as possible, especially when the The light emitted by the second light emitting chip 5 in the direction of the first light emitting chip 4 prevents the light emitted from the edge of the second light emitting chip 5 from being mixed with the light emitted by the first light emitting chip 4 and appears green.
  • This connection method can adjust the light intensity of the light-emitting chip at any time, which is convenient for controlling the mixing of white light.
  • one first light-emitting chip 4 is connected in parallel with at least two second light-emitting chips 5 or in the second chip module, one first light-emitting chip 4 is connected with at least three The second light-emitting chips 5 are connected in parallel, the number of chip modules in the bracket 1 is not limited, it can be two or more chip modules, and two or more chip modules are also connected in parallel, It is convenient to control the light intensity of light-emitting chips on multiple chip module lines at the same time.
  • the second connection method at least two second light-emitting chips 5 are connected in parallel to form a chip string, and then the chip string is connected in series with the first light-emitting chip 4 .
  • the current passed by the chip string is equal to the current passed by the first light-emitting chip 4, and the current passed by the second light-emitting chips 5 in the chip string is the same.
  • the currents passed by the two second light-emitting chips 5 are equal and half of the current of the first light-emitting chip 4, that is, the currents of the first light-emitting chip 4 and the second light-emitting chip 5 are the same.
  • the luminous intensity of each second light-emitting chip 5 is half of the luminous intensity of the first light-emitting chip 4 . Compared with the first wiring method, this wiring method can reduce the wiring cost.
  • a blue light chip with a dominant wavelength of 447-455nm is selected for the first light-emitting chip 4
  • a green light chip with a dominant wavelength of 527-535nm is selected for the second light-emitting chip 5
  • KSF material is selected for the red phosphor material.
  • the wavelength is 610-640nm
  • the packaging glue is Dow Corning OE-7662 glue.
  • the LED encapsulation process is exemplified as follows:
  • the bracket 1 First place the chip in the bracket 1 where the crystal-bonding glue has been applied; put the bracket 1 into the baking equipment for baking, the baking temperature is 100°C, and the baking time is 1 hour, and then the baking temperature Adjust the temperature to 150°C and bake for 2 hours; connect the chip to the pad 6 in the bracket 1 through the gold wire 7; place an encapsulant mixed with red phosphor powder on the light-emitting side of each chip to form a light conversion layer 8 ; Then put the bracket 1 into the baking equipment for pre-baking and curing, and the packaging is completed after the baking is completed.
  • Embodiment 2 of the present application discloses a backlight light bar, and the backlight light bar includes at least one LED lamp bead described in Embodiment 1.
  • the backlight light bar includes at least one LED light bead and a PCB board, and the LED light bead is installed on the PCB board. Further, the PCB board is provided with connection terminals for connecting with an external power supply.
  • numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of the embodiments use the modifiers "about”, “approximately” or “substantially” in some examples. grooming. Unless otherwise stated, “about”, “approximately” or “substantially” indicates that the figure allows for a variation of ⁇ %. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that can vary depending upon the desired characteristics of individual embodiments. In some embodiments, numerical parameters should take into account the specified significant digits and adopt the general digit reservation method. Although the numerical ranges and parameters used in some embodiments of the present application to confirm the breadth of the scope are approximate values, in specific embodiments, such numerical values are set as precisely as practicable.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

本申请提供了一种LED灯珠。该LED灯珠包括支架;第一发光芯片和至少两个第二发光芯片,第一发光芯片和第二发光芯片均分布在支架内,第二发光芯片设置在第一发光芯片的侧部,且第二发光芯片环绕第一发光芯片呈中心对称设置;光转换层,用于发出红光,设置在第一发光芯片和第二发光芯片的出光侧。

Description

一种LED灯珠及背光灯条
本申请要求于2022年3月2日提交中国专利局、申请号为202220444797.4、申请名称为“一种LED灯珠及背光灯条”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
技术领域
本申请涉及LED背光技术领域,尤其涉及一种LED灯珠及背光灯条。
背景技术
目前LED背光源已成为市场主流,与传统的CCFL背光源相比,LED背光具有色域、亮度高、寿命长、节能环保、色彩可调等诸多优点。为了实现白光,目前主流的方法是采用蓝光芯片和绿光芯片分别居于支架两端,然后使蓝光芯片和绿光芯片分别发出的光激活红色荧光粉,并与红光混合发出均匀的白光。
技术问题
由于红蓝芯片排布的问题,会导致蓝光芯片远离中心的区域仅激发红色荧光粉而与红光混合,呈现出偏红的光,绿光芯片远离中心区域部分会呈现出偏绿的光,而中间部分为白光,这样便会导致在采用红色荧光粉这种混光方式时,蓝绿芯片发出的光在支架内无法充分混合,LED出光后出现颜色不均,无法出射均匀的光。
技术解决方案
有鉴于此,本申请提供了一种新的LED灯珠及背光灯条。
而本申请为解决上述技术问题所采用的技术方案为:
第一方面,本申请提供了一种LED灯珠,包括:
支架;
第一发光芯片和至少两个第二发光芯片,所述第一发光芯片和所述第二发光芯片均分布在所述支架内,所述第二发光芯片设置在所述第一发光芯片的侧部,且所述第二发光芯片环绕所述第一发光芯片呈中心对称设置;
光转换层,用于发出红光,设置在所述第一发光芯片和所述第二发光芯片的出光侧。
可选地,在本申请部分实施例中,每一所述第一发光芯片对应设置偶数个所述第二发光芯片以形成第一芯片模组,在所述第一芯片模组中,各个所述第二发光芯片分别成对设置在所述第一发光芯片的两侧。
可选地,在本申请部分实施例中,所述支架呈杯状,包括底壁和环绕所述底壁边沿的内侧壁,至少部分所述内侧壁自与所述底壁相连接的一侧开始朝向背离所述第二发光芯片的方向倾斜延伸。
可选地,在本申请部分实施例中,所述第一发光芯片和所述第二发光芯片均设置在所述底壁上。
可选地,在本申请部分实施例中,在每一所述第一芯片模组中,所述第一发光芯片与所述第二发光芯片并联连接。
可选的,多个所述第二发光芯片之间也并联连接,并在每一条并联支路上串联设置一个可变电阻。
可选地,在本申请部分实施例中,所述第一芯片模组包括一个所述第一发光芯片和两个分别设置在所述第一发光芯片两侧的所述第二发光芯片,所述内侧壁包括第一内侧壁和与所述第一内侧壁垂直的第二内侧壁,所述第一内侧壁位于所述第二发光芯片背离所述第一发光芯片的一侧,且自与所述底壁相连接的一侧开始朝向背离所述第二发光芯片的方向倾斜延伸;所述第二内侧壁垂直于所述底壁。
可选地,在本申请部分实施例中,在所述第一芯片模组中,每一所述第一发光芯片与至少两个所述第二发光芯片并联连接,两个及两个以上的所述芯片模组并联连接。
可选地,在本申请部分实施例中,每一所述第一发光芯片对应设置奇数个所述第二发光芯片以形成第二芯片模组,且在所述第二芯片模组中,所述第二发光芯片数量至少为三个,各个所述第二发光芯片等间距环绕分布在所述第一发光芯片侧部。
可选的,在每一个所述第二芯片模组中,一个所述第一发光芯片与至少三个所述第二发光芯片并联连接。
可选地,在本申请部分实施例中,至少两个所述第二发光芯片并联成一个芯片串,所述芯片串与所述第一发光芯片串联连接。
可选的,所述第一发光芯片的发光强度大于所述第二发光芯片的发光强度。
可选的,所述第一发光芯片为主波长为447-455nm的蓝光芯片,所述第二发光芯片为主波长为527-535nm的绿光芯片。
可选的,所述光转换层包括:红色荧光粉和封装胶,所述红色荧光粉与所述封装胶混合,且所述红色荧光粉固定至所述封装胶内。
可选的,所述支架内设有可导电的焊盘,所述第一发光芯片和所述第二发光芯片通过金线与所述焊盘连接。
第二方面,本申请提供了一种背光灯条,包括如第一方面所述的LED灯珠。
可选的,所述背光灯板还包括:PCB板,所述LED灯珠安装在所述PCB板上,所述PCB板上设置有接线端子,用于与外部电源连接
有益效果
综上,由于采用了上述技术方案,本申请至少包括有益效果:
本申请提供了一种LED灯珠及背光灯条,在本申请所提供的实施例中,通过设置第一发光芯片和第二发光芯片之间的排布方式,以达到混光均匀的目的,主要是将至少两个第二发光芯片设置在第一发光芯片的侧部,且第二发光芯片环绕分布在第一发光芯片周围并呈中心对称设置,以此保证第一发光芯片在远离其中一个第二发光芯片的一端所发出的光仍然能够与另外的第二发光芯片发出的光进行混合,使第一发光芯片无论何种角度发出的光都能尽可能地与第二发光芯片发出的光混合均匀;在第一发光芯片和第二发光芯片出光侧设置用于发出红光的光转换层,使得第一发光芯片与第二发光芯片发出的光也能与红光混合均匀,实现无杂色光的均匀出射。
附图说明
为了更清楚地说明本申请实施例的技术方案,下面将对实施例的附图作简单介绍,显而易见地,下面描述中的附图仅仅涉及本申请的一些实施例,而非对本申请的限制,其中:
图1为本申请实施例1中支架平面示意图;
图2为本申请实施例1中一个第一发光芯片对应两个第二发光芯片的并联连接排布结构示意图;
图3为图2的侧视示意图;
图4为本申请实施例1中第一发光芯片与第二发光芯片串联连接的排布结构示意图;
图5为本申请实施例1中一个第一发光芯片对应三个第二发光芯片的排布结构示意图。
附图标记说明:
1-支架;2-内侧壁;3-底壁;4-第一发光芯片;5-第二发光芯片;6-焊盘;7-金线;8-光转换层。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下获得的所有其他实施例,都属于本申请保护的范围。
本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有独特的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明或者隐含地包括一个或者更多个特征。在本申请的描述中,“多个”的含义两个或两个以上,除非另有明确具体的限定。
在申请中,“示例性”一词用来表示“用作例子、例证或说明”。本申请中被描述为示例性”的任何实施例不一定被解释为比其他实施例更优选或更具优势。为使本领域任何技术人员能够实现和使用本申请,给出了以下描述。在以下描述,为了解释的目的而列出了细节。应当明白的是,本领域普通技术人员可以认识到,在不使用这些特定细节的情况下也可以实现本申请。在其他实例中,不会对已知的结构和过程进行详细阐述,以避免不必要的细节使本申请的描述变得晦涩。因此,本申请并非旨在限于所示的实施例,而是与符合本申请所公开的原理的最广范围相一致。
实施例1
请参见图1至图5,本实施例公开了一种LED灯珠,该LED灯珠具体包括:
支架1;
第一发光芯片4和至少两个第二发光芯片5,第一发光芯片4和第二发光芯片5均分布在支架1内,第二发光芯片5设置在第一发光芯片4的侧部,且第二发光芯片5环绕第一发光芯片4呈中心对称设置;
光转换层8,设置在第一发光芯片4和第二发光芯片5的出光侧,第一发光芯片4、第二发光芯片5以及光转换层8三者发出的光能够混合出白光。
需要说明的是,前述的第一发光芯片4为发出蓝光的蓝光芯片,第二发光芯片5为发出绿光的绿光芯片;或者是前述的第一发光芯片4为发出绿光的绿光芯片,第二发光芯片5为发出蓝光的蓝光芯片。蓝光芯片和绿光芯片的波长均可对光转换层8产生激发作用,使其发出红光,继而将蓝光芯片发出的蓝光、绿光芯片发出的绿光以及光转换层8被激发后发出的红光三种光均匀混合,使LED灯珠发出均匀白光。
还需要说明的是,请参见图3,对于光转换层8,具体包括红色荧光粉和封装胶,将红色荧光粉与封装胶混合,之后再通过烘烤的方式,将红色荧光粉固定至封装胶内,并设置在第一发光芯片4和第二发光芯片5的出光侧,通过发光芯片发出的符合激发波长的光,激发红色荧光粉发出红光。
本实施例所提供的方案,主要在第一发光芯片4的周围环绕设置至少两个第二发光芯片5,且第二发光芯片5以第一发光芯片4为中心,呈中心对称设置,使得第二发光芯片5发出的光能够在使用相同第二发光芯片5的前提下,最大程度地使第一发光芯片4所发出的光能够与第二发光芯片5发出的光混合,避免出现第一发光芯片4的部分光得不到第二发光芯片5发出的光的混合,尤其是第一发光芯片4背离第二发光芯片5部分发出的光。
请参见图2,本实施例所提供的方案中,对于第一发光芯片4和第二发光芯片5的排布方式有多种,如第一种方式:第一发光芯片4设置一个,然后在第一发光芯片4的侧部周围环绕设置数量为偶数个的第二发光芯片5,以形成第一芯片模组。在第一芯片模组中,偶数个的第二发光芯片5两两成对,每一对第二发光芯片5则分别设置在第一发光芯片4的两侧,成对侧设置。这样排布能够弥补现有技术中第一发光芯片4在背离第二发光芯片5的一侧光得不到第二发光芯片5发出的光的混合,且采用该种排布方式,能够以最少的第二发光芯片5实现第一发光芯片4与第二发光芯片5混光均匀。第一发光芯片4和第二发光芯片5具体数量为一个第一发光芯片4和两个第二发光芯片5,即一个第一发光芯片4的两侧对应设置两个第二发光芯片5即可。
请参见图1和图3,本实施例所提供的方案中,用于容纳各发光芯片以及光转换层8的支架1呈杯状,该杯状的支架1横截面积不做限定,可以是方形、圆形、长条形或者是其他规则类形状。在本实施例中,对于支架1横截面形状采用的是方形,具体包括底壁3和环绕底壁3边沿的内侧壁2,至少部分内侧壁2自与底壁3相连接的一侧开始朝向背离第二发光芯片5的方向倾斜延伸设置,使LED灯珠在出射混合后的光时,光出射效果更好,对光具有一定的扩散作用,照射范围更广。对于内侧壁2至少部分倾斜,具体根据第一发光芯片4和第二发光芯片5之间的排列分布位置来设置倾斜内侧壁2的数量以及位置。
为了便于更好地理解倾斜内侧壁2和第二发光芯片5之间的关系,下面进行举例说明:
请参见图2和图3,若第一芯片模组包括一个第一发光芯片4和两个第二发光芯片5,第一发光芯片4位于两个第二发光芯片5之间,两个第二发光芯片5呈相对设置,即第一发光芯片4和第二发光芯片5是呈一条直线进行排列。对于支架1的横截面形状选用矩形,那么内侧壁2则为四个,具体包括两个第一内侧壁和两个与第一内侧壁垂直的第二内侧壁,其中两个第一内侧壁位于第一发光芯片4和第二发光芯片5排列方向的两端头处,即第一内侧壁位于第二发光芯片5背离第一发光芯片4的一侧。第一内侧壁自与底壁3相连接的一侧开始朝向背离第二发光芯片5的方向倾斜延伸设置,能够达到出射光更好,扩散范围更广的效果且又不会影响到第一发光芯片4发出的光与第二发光芯片5发出的光的混合。
本实施例所提供的方案中,将第一发光芯片4和第二发光芯片5均设置在支架1的底壁3上,使第一发光芯片4和第二发光芯片5均处于同一平面,保证第一发光芯片4发出的光能够从出射阶段就直接与第二发光芯片5混合,而不会因为两种芯片高度不同而造成在高度方向上两个芯片之间的光得不到混合,甚至造成光的遮挡。且将第一发光芯片4和第二发光芯片5均限制在同一底壁3上,也方便后续对芯片进行走线。进一步地,在支架1内还设有可导电的焊盘6,发光芯片通过金线7与焊盘6连接,方便后续走线连接。
本实施例所提供的方案中,对于第一发光芯片4和第二发光芯片5的另一种排布方式,即一个第一发光芯片4对应设置数量为奇数个的第二发光芯片5,以形成第二芯片模组。且在第二芯片模组中,第二发光芯片5的数量至少为三个,将各个第二发光芯片5等间距环绕分布在第一发光芯片4侧部。为便于理解奇数个的第二发光芯片5围绕第一发光芯片4的排列方式,举例说明如下:
请参见图5,在第二芯片模组中,第一发光芯片4选用一个,第二发光芯片5选用三个,三个第二发光芯片5围绕第一发光芯片4的侧部设置。三个第二发光芯片5之间的连线构成一个等边三角形,将第一发光芯片4发出的光在360°范围内都能与第二发光芯片5发出的光进行混合,避免第一发光芯片4的某个方向边缘处的光无法得到第二发光芯片5发出的光的混合。通过这种排布方式,便可以将第一发光芯片4、第二发光芯片5以及光转换层8三者发出的光充分混合,得到无杂色的白光。
需要说明的是,对于该种方式,相较于采用一个第一发光芯片4对应两个第二发光芯片5的方式,能够更好地保证第一发光芯片4的光色混合,且采用一个第一发光芯片4对应三个第二发光芯片5是采用奇数个第二发光芯片5的排布方式种,使用第二发光芯片5最少,也是最简单的排布方式,且走线方式也相较其他奇数排布方式更加简单。
本实施例提供的方案中,对于一个第一发光芯片4的两侧对应设置两个第二发光芯片5的排布方式,为了能够尽可能减少发光芯片的使用以及减小排布复杂程度,通常均选用一个第一发光芯片4对应两个第二发光芯片5的排布方式。但采用该种方式相较于一个第一发光芯片4对应三个第二发光芯片5的排布方式,其混光效果还是会差一点。所以,对于选用一个第一发光芯片4对应两个第二发光芯片5的排布方式还需要做进一步改进,以弥补部分第一发光芯片4发出的光中少量光得不到第二发光芯片5的混合,具体是,将第二内侧壁设置为垂直于底壁3或者是朝向芯片方向进行一定角度的倾斜设置,以此减小第一发光芯片4在没有设置第二发光芯片5的两侧光出射的范围,使光尽量被压缩至靠近第二发光芯片5的范围内。
本实施例提供的方案中,无论是奇数个第二发光芯片5的排列方式还是偶数个第二发光芯片5的排列方式,第一发光芯片4的发光强度均大于第二发光芯片5的发光强度,保证第一发光芯片4出射的光能够覆盖到第二发光芯片5远离第一发光芯片4的边缘处出射的光。对于第一发光芯片4的发光强度大于第二发光芯片5的发光强度实现方式可以有多种,如可以通过选用功率、材质等自身发光强度不同的第一发光芯片4和第二发光芯片5;也可以通过改变电路连接方式实现,下面则对通过电路连接改变发光芯片光强的方式进行说明:
请参见图2,第一种连接方式:在第一芯片模组或者第二芯片模组中,将第一发光芯片4与第二发光芯片5并联连接,多个第二发光芯片5之间也同样是并联连接,并在每一条并联支路上串联设置一个可变电阻或者是选用的第二发光芯片5电阻大于第一发光芯片4的电阻,通过调节可变电阻,便可实现对第一发光芯片4和第二发光芯片5通过的电流大小进行调节,从而实现对第一发光芯片4和第二发光芯片5发出的光强进行调节。将第一发光芯片4的光强调节为大于第二发光芯片5的光强,有利于第一发光芯片4出射的光能够尽可能覆盖到第二发光芯片5所发出的光,尤其是在远离第一发光芯片4的方向上的第二发光芯片5发出的光,避免第二发光芯片5边缘发出的光得不到第一发光芯片4发出的光的混合,而呈现出绿色。该种连接方式可随时调节发光芯片的光强,便于控制白光的混合。
需要说明的是,在第一芯片模组中,一个第一发光芯片4与至少两个第二发光芯片5并联连接或者是在第二芯片模组中,一个第一发光芯片4与至少三个第二发光芯片5并联连接,对于支架1内芯片模组的数量不作限定,可以是两个及两个以上的芯片模组,且对于两个及两个以上的芯片模组同样是并联连接,便于同时控制多条芯片模组线路上的发光芯片光强。
请参见图4,第二种连接方式:将至少两个第二发光芯片5并联成一个芯片串,再将芯片串与第一发光芯片4串联连接。该种连接方式中芯片串通过的电流与第一发光芯片4通过的电流相等,而芯片串中若干第二发光芯片5通过的电流相同,通过控制第二发光芯片5的数量便可以控制每个第二发光芯片5的发光强度。如第二发光芯片5设置为两个,则两个第二发光芯片5通过的电流相等,且为第一发光芯片4电流的一半,即在第一发光芯片4与第二发光芯片5其余自身参数相同的情况下,每个第二发光芯片5的发光强度即为第一发光芯片4的发光强度的一半。采用该种走线方式,相较于第一种走线方式,可以降低走线成本。
本实施例所公开的方案中,对于第一发光芯片4选用主波长为447-455nm的蓝光芯片,第二发光芯片5选用主波长为527-535nm的绿光芯片,红色荧光粉材料选用KSF材料,波长为610-640nm,封装胶选用道康宁OE-7662胶水。
本实施例所公开的方案中,关于LED封装过程举例如下:
首先将芯片放置到点完固晶胶的支架1内;在将支架1放入至烘烤设备中进行烘烤,烘烤温度为100℃,烘烤时长为1小时,之后再将烘烤温度调节至150℃,烘烤2小时;将芯片与支架1内的焊盘6通过金线7连接;在每颗芯片的出光侧方向上设置混有红色荧光粉的封装胶,形成光转换层8;再将支架1放入至烘烤设备,进行预烘烤固化,烘烤结束后封装完成。
实施例2
本申请实施例2公开了一种背光灯条,该背光灯条包括实施例1中至少一个所述的LED灯珠。
作为背光灯条其中一种实施方式,其包括上述的至少一个LED灯珠、PCB板,该LED灯珠安装在PCB板上。进一步地,PCB板上设置有接线端子,用于与外部电源连接。
上文已对基本概念做了描述,显然,对于本领域技术人员来说,上述详细披露仅仅作为示例,而并不构成对本申请的限定。虽然此处并没有明确说明,本领域技术人员可能会对本申请进行各种修改、改进和修正。该类修改、改进和修正在本申请中被建议,所以该类修改、改进、修正仍属于本申请示范实施例的精神和范围。
同时,本申请使用了特定词语来描述本申请的实施例。如“一个实施例”、“一实施例”、和/或“一些实施例”意指与本申请至少一个实施例相关的某一特征、结构或特点。因此,应强调并注意的是,本说明书中在不同位置两次或多次提及的“一实施例”或“一个实施例”或“一个替代性实施例”并不一定是指同一实施例。此外,本申请的一个或多个实施例中的某些特征、结构或特点可以进行适当的组合。
同理,应当注意的是,为了简化本申请披露的表述,从而帮助对一个或多个申请实施例的理解,前文对本申请实施例的描述中,有时会将多种特征归并至一个实施例、附图或对其的描述中。但是,这种披露方法并不意味着本申请对象所需要的特征比权利要求中提及的特征多。实际上,实施例的特征要少于上述披露的单个实施例的全部特征。
一些实施例中使用了描述成分、属性数量的数字,应当理解的是,此类用于实施例描述的数字,在一些示例中使用了修饰词“大约”、“近似”或“大体上”来修饰。除非另外说明,“大约”、“近似”或“大体上”表明数字允许有±%的变化。相应地,在一些实施例中,说明书和权利要求中使用的数值参数均为近似值,该近似值根据个别实施例所需特点可以发生改变。在一些实施例中,数值参数应考虑规定的有效数位并采用一般位数保留的方法。尽管本申请一些实施例中用于确认其范围广度的数值域和参数为近似值,在具体实施例中,此类数值的设定在可行范围内尽可能精确。
针对本申请引用的每个专利、专利申请、专利申请公开物和其他材料,如文章、书籍、说明书、出版物、文档等,特此将其全部内容并入本申请作为参考,但与本申请内容不一致或产生冲突的申请历史文件除外,对本申请权利要求最广范围有限制的文件(当前或之后附加于本申请中的)也除外。需要说明的是,如果本申请附属材料中的描述、定义、和/或术语的使用与本申请内容有不一致或冲突的地方,以本申请的描述、定义和/或术语的使用为准。

Claims (20)

  1. 一种LED灯珠,其中,包括:
    支架;
    第一发光芯片和至少两个第二发光芯片,所述第一发光芯片和所述第二发光芯片均分布在所述支架内,所述第二发光芯片设置在所述第一发光芯片的侧部,且所述第二发光芯片环绕所述第一发光芯片呈中心对称设置;
    光转换层,用于发出红光,设置在所述第一发光芯片和所述第二发光芯片的出光侧。
  2. 如权利要求1所述LED灯珠,其中,每一所述第一发光芯片对应设置偶数个所述第二发光芯片以形成第一芯片模组,在所述第一芯片模组中,各个所述第二发光芯片分别成对设置在所述第一发光芯片的两侧。
  3. 如权利要求2所述LED灯珠,其中,所述支架呈杯状,包括底壁和环绕所述底壁边沿的内侧壁,至少部分所述内侧壁自与所述底壁相连接的一侧开始朝向背离所述第二发光芯片的方向倾斜延伸。
  4. 如权利要求3所述LED灯珠,其中,所述第一发光芯片和所述第二发光芯片均设置在所述底壁上。
  5. 如权利要求2所述LED灯珠,其中,在每一所述第一芯片模组中,所述第一发光芯片与所述第二发光芯片并联连接。
  6. 根据权利要求5所述的LED灯珠,其中,多个所述第二发光芯片之间也并联连接,并在每一条并联支路上串联设置一个可变电阻。
  7. 如权利要求3所述LED灯珠,其中,所述第一芯片模组包括一个所述第一发光芯片和两个分别设置在所述第一发光芯片两侧的所述第二发光芯片,所述内侧壁包括第一内侧壁和与所述第一内侧壁垂直的第二内侧壁,所述第一内侧壁位于所述第二发光芯片背离所述第一发光芯片的一侧,且自与所述底壁相连接的一侧开始朝向背离所述第二发光芯片的方向倾斜延伸;所述第二内侧壁垂直于所述底壁。
  8. 如权利要求5所述LED灯珠,其中,在所述第一芯片模组中,每一所述第一发光芯片与至少两个所述第二发光芯片并联连接,两个及两个以上的所述芯片模组并联连接。
  9. 如权利要求1所述LED灯珠,其中,每一所述第一发光芯片对应设置奇数个所述第二发光芯片以形成第二芯片模组,且在所述第二芯片模组中,所述第二发光芯片数量至少为三个,各个所述第二发光芯片等间距环绕分布在所述第一发光芯片侧部。
  10. 根据权利要求9所述LED灯珠,其中,在每一个所述第二芯片模组中,一个所述第一发光芯片与至少三个所述第二发光芯片并联连接。
  11. 如权利要求1所述LED灯珠,其中,至少两个所述第二发光芯片并联成一个芯片串,所述芯片串与所述第一发光芯片串联连接。
  12. 如权利要求1所述LED灯珠,其中,所述第一发光芯片的发光强度大于所述第二发光芯片的发光强度。
  13. 如权利要求1所述LED灯珠,其中,所述第一发光芯片为主波长为447-455nm的蓝光芯片,所述第二发光芯片为主波长为527-535nm的绿光芯片。
  14. 如权利要求1所述LED灯珠,其中,所述光转换层包括:红色荧光粉和封装胶,所述红色荧光粉与所述封装胶混合,且所述红色荧光粉固定至所述封装胶内。
  15. 如权利要求1所述LED灯珠,其中,所述支架内设有可导电的焊盘,所述第一发光芯片和所述第二发光芯片通过金线与所述焊盘连接。
  16. 一种背光灯条,其中,包括LED灯珠,所述LED灯珠包括:
    支架;
    第一发光芯片和至少两个第二发光芯片,所述第一发光芯片和所述第二发光芯片均分布在所述支架内,所述第二发光芯片设置在所述第一发光芯片的侧部,且所述第二发光芯片环绕所述第一发光芯片呈中心对称设置;
    光转换层,用于发出红光,设置在所述第一发光芯片和所述第二发光芯片的出光侧。
  17. 根据权利要求16所述的背光灯板,其中,每一所述第一发光芯片对应设置偶数个所述第二发光芯片以形成第一芯片模组,在所述第一芯片模组中,各个所述第二发光芯片分别成对设置在所述第一发光芯片的两侧。
  18. 根据权利要求17所述的背光灯板,其中,所述支架呈杯状,包括底壁和环绕所述底壁边沿的内侧壁,至少部分所述内侧壁自与所述底壁相连接的一侧开始朝向背离所述第二发光芯片的方向倾斜延伸。
  19. 根据权利要求18所述的背光灯板,其中,所述第一发光芯片和所述第二发光芯片均设置在所述底壁上。
  20. 根据权利要求16所述的背光灯板,所述背光灯板还包括:
    PCB板,所述LED灯珠安装在所述PCB板上,所述PCB板上设置有接线端子,用于与外部电源连接。
PCT/CN2022/138558 2022-03-02 2022-12-13 一种led灯珠及背光灯条 WO2023165215A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202220444797.4U CN217062091U (zh) 2022-03-02 2022-03-02 一种led灯珠及背光灯条
CN202220444797.4 2022-03-02

Publications (1)

Publication Number Publication Date
WO2023165215A1 true WO2023165215A1 (zh) 2023-09-07

Family

ID=82486596

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/138558 WO2023165215A1 (zh) 2022-03-02 2022-12-13 一种led灯珠及背光灯条

Country Status (2)

Country Link
CN (1) CN217062091U (zh)
WO (1) WO2023165215A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN217062091U (zh) * 2022-03-02 2022-07-26 惠州视维新技术有限公司 一种led灯珠及背光灯条

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100157583A1 (en) * 2008-12-19 2010-06-24 Toshiyuki Nakajima Led device and led lighting apparatus
JP2017143253A (ja) * 2016-02-09 2017-08-17 日亜化学工業株式会社 発光装置及び発光装置を備えたバックライト
JP2019114762A (ja) * 2017-12-22 2019-07-11 日亜化学工業株式会社 発光装置
CN217062091U (zh) * 2022-03-02 2022-07-26 惠州视维新技术有限公司 一种led灯珠及背光灯条

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100157583A1 (en) * 2008-12-19 2010-06-24 Toshiyuki Nakajima Led device and led lighting apparatus
JP2017143253A (ja) * 2016-02-09 2017-08-17 日亜化学工業株式会社 発光装置及び発光装置を備えたバックライト
JP2019114762A (ja) * 2017-12-22 2019-07-11 日亜化学工業株式会社 発光装置
CN217062091U (zh) * 2022-03-02 2022-07-26 惠州视维新技术有限公司 一种led灯珠及背光灯条

Also Published As

Publication number Publication date
CN217062091U (zh) 2022-07-26

Similar Documents

Publication Publication Date Title
TW558775B (en) Package of compound type LED
JP5240603B2 (ja) 白色光源モジュール及びバックライトユニット並びにlcdディスプレイ
KR100946015B1 (ko) 백색 발광장치 및 이를 이용한 lcd 백라이트용 광원모듈
WO2018205455A1 (zh) 采用csp芯片和倒装蓝光led芯片封装的白光led cob的结构及制备方法
US20070001188A1 (en) Semiconductor device for emitting light and method for fabricating the same
TW448588B (en) LED lamp of edge emitting type
JP5443959B2 (ja) 照明装置
KR20120093181A (ko) 광혼합재를 포함하는 고상 조명 디바이스
KR20110026490A (ko) 광혼합재를 포함하는 고상 조명 디바이스
TW200940892A (en) Lighting device and assembling method thereof
CN103839937A (zh) 白光发光二极管模块
WO2023165215A1 (zh) 一种led灯珠及背光灯条
CN109148430B (zh) 一种led植物照明光源制作方法
CN218299819U (zh) 一种发光装置及其灯具
CN217691170U (zh) 一种照明装置
US11398524B2 (en) Chip-on-board type photoelectric device
JP4014377B2 (ja) Ledランプ
CN214176060U (zh) 一种蓝光晶粒和csp晶粒混合的cob光源及灯具
JP2004288827A (ja) Ledランプ
JP2013041730A (ja) 光源モジュール
KR101322458B1 (ko) 다색 발광장치
CN113394203A (zh) 双色温光源封装结构及其制作方法
CN112331755A (zh) Led单元及其应用
CN206364010U (zh) 一种基于倒装式封装的可调光cob光源
KR100883991B1 (ko) 색변환 광대역 발광다이오드와, 이의 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22929642

Country of ref document: EP

Kind code of ref document: A1