WO2023159696A1 - 显示面板及显示面板的修复方法 - Google Patents

显示面板及显示面板的修复方法 Download PDF

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Publication number
WO2023159696A1
WO2023159696A1 PCT/CN2022/081184 CN2022081184W WO2023159696A1 WO 2023159696 A1 WO2023159696 A1 WO 2023159696A1 CN 2022081184 W CN2022081184 W CN 2022081184W WO 2023159696 A1 WO2023159696 A1 WO 2023159696A1
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WO
WIPO (PCT)
Prior art keywords
electrode
display panel
auxiliary
thin film
film transistor
Prior art date
Application number
PCT/CN2022/081184
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English (en)
French (fr)
Inventor
袁松
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/764,671 priority Critical patent/US20240114761A1/en
Publication of WO2023159696A1 publication Critical patent/WO2023159696A1/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • H10K59/1315Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861Repairing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/814Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/824Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/126Shielding, e.g. light-blocking means over the TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80516Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the display field, in particular to a display panel and a repair method for the display panel.
  • OLEDs Organic light-emitting display panels
  • OLEDs have been widely used in people's lives, such as display screens of mobile phones and computers.
  • OLEDs organic light-emitting display panels
  • the bright spots of the display panel not only reduce the yield of the display panel, but also reduce the display quality.
  • Embodiments of the present application provide a display panel and a repair method for the display panel, which can improve or eliminate the problem of abnormal bright spots in the display panel, and the problems of reduced yield and display quality of the display panel caused by abnormal bright spots.
  • An embodiment of the present application provides a display panel, including:
  • An array substrate including power signal traces and at least one auxiliary trace
  • a plurality of light-emitting devices arranged in an array on the array substrate include a first electrode and a second electrode, and the second electrode is arranged on a side of the first electrode away from the array substrate;
  • the display panel further includes a plurality of auxiliary electrodes arranged on the same layer as the first electrode, the auxiliary electrodes are arranged corresponding to the first electrodes of at least one light-emitting device, and the auxiliary electrodes are electrically connected to the The auxiliary wiring, the potential of the auxiliary wiring is lower than the potential of the power signal wiring.
  • the distance between the auxiliary electrode and the corresponding first electrode is less than or equal to 2 micrometers.
  • each of the auxiliary electrodes is arranged corresponding to the first electrodes of a plurality of the light emitting devices.
  • each of the auxiliary electrodes is connected to at least one of the red light-emitting devices
  • the first electrode, the first electrode of at least one green light emitting device, and the first electrode of at least one blue light emitting device are arranged correspondingly.
  • the first electrode of at least one light emitting device is connected to the corresponding auxiliary electrode.
  • the array substrate further includes a thin film transistor, a first metal layer between the thin film transistor and the light emitting device, and the auxiliary wiring and the first metal layer Layer same layer settings.
  • the array substrate further includes a thin film transistor, a first metal layer between the thin film transistor and the light emitting device, and the auxiliary wiring and the first metal layer Layer same layer settings.
  • the array substrate further includes a thin film transistor, a first metal layer between the thin film transistor and the light emitting device, and the auxiliary wiring and the first metal layer Layer same layer settings.
  • the array substrate further includes a thin film transistor, a first metal layer between the thin film transistor and the light emitting device, and the auxiliary wiring and the first metal layer Layer same layer settings.
  • the first electrode is connected to the drain of the thin film transistor through the first metal layer.
  • the array substrate further includes a thin film transistor, the thin film transistor includes a gate, an active layer, and a source and drain, and the auxiliary wiring is connected to the gate Or the source and drain are arranged in the same layer.
  • the array substrate further includes a thin film transistor, the thin film transistor includes a gate, an active layer, and a source and drain, and the auxiliary wiring is connected to the gate Or the source and drain are arranged in the same layer.
  • the array substrate further includes a thin film transistor, the thin film transistor includes a gate, an active layer, and a source and drain, and the auxiliary wiring is connected to the gate Or the source and drain are arranged in the same layer.
  • the array substrate further includes a thin film transistor, the thin film transistor includes a gate, an active layer, and a source and drain, and the auxiliary wiring is connected to the gate Or the source and drain are arranged in the same layer.
  • the array substrate further includes a second metal layer, a thin film transistor disposed on the second metal layer, and the auxiliary wiring is connected to the second metal layer.
  • the array substrate further includes a second metal layer, a thin film transistor disposed on the second metal layer, and the auxiliary wiring is connected to the second metal layer.
  • the array substrate further includes a second metal layer, a thin film transistor disposed on the second metal layer, and the auxiliary wiring is connected to the second metal layer.
  • an embodiment of the present application also provides a method for repairing a display panel, wherein, in any one of the display panels described above, the method for repairing a display panel includes the following steps:
  • Step S100 irradiating the auxiliary electrode with the corresponding first electrode to be electrically connected by melting
  • Step S200 supplying a potential to the auxiliary wiring, and the auxiliary wiring supplies an electric signal to the first electrode connected to the auxiliary electrode.
  • the distance between the auxiliary electrode and the corresponding first electrode is less than or equal to 2 micrometers.
  • each of the auxiliary electrodes is arranged corresponding to the first electrodes of a plurality of the light emitting devices.
  • Embodiments of the present application provide a display panel and a repairing method for the display panel.
  • the display panel includes: an array substrate including power signal wiring and at least one auxiliary wiring; a plurality of light-emitting devices arranged in an array on the array substrate; It includes a first electrode and a second electrode, and the second electrode is arranged on the side of the first electrode away from the array substrate; wherein, the light-emitting device layer further includes a plurality of auxiliary electrodes arranged on the same layer as the first electrode, and the auxiliary electrodes are connected with at least one light-emitting electrode.
  • the first electrodes of the device are arranged correspondingly, the auxiliary electrodes are electrically connected to the auxiliary wiring, and the potential of the auxiliary wiring is lower than that of the power signal wiring.
  • the first electrode corresponding to the bright spot and the auxiliary electrode are melted and shorted by laser irradiation, and then a low potential signal is given to the auxiliary wiring to eliminate the large voltage difference between the first electrode and the second electrode , thereby converting bright spots into dark spots, thereby improving or eliminating abnormal bright spots in the display panel, and improving the yield rate and display quality of the display panel.
  • FIG. 1 is a first partial top view of an auxiliary electrode of a display panel provided by an embodiment of the present application
  • FIG. 2 is a second partial top view of an auxiliary electrode of a display panel provided by an embodiment of the present application
  • Fig. 3 is a first cross-sectional schematic diagram of a display panel provided by an embodiment of the present application.
  • Fig. 4 is a schematic diagram of a second cross-sectional structure of a display panel provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a third cross-sectional structure of a display panel provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram of a fourth cross-sectional structure of a display panel provided by an embodiment of the present application.
  • Fig. 7 is a schematic circuit schematic diagram of a method for repairing a display panel provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a repair process of a repair method for a display panel provided by an embodiment of the present application.
  • Fig. 9 is a first cross-sectional schematic diagram of a repaired display panel provided by an embodiment of the present application.
  • Fig. 10 is a second cross-sectional schematic diagram of a repaired display panel provided by an embodiment of the present application.
  • FIG. 11 is a schematic flow chart of a method for repairing a display panel provided by an embodiment of the present application.
  • a display panel includes: an array substrate including power signal wiring and at least one auxiliary wiring; a plurality of light emitting devices arranged in an array on the array substrate, and the light emitting device includes a An electrode and a second electrode, the second electrode is arranged on the side of the first electrode away from the array substrate; wherein, the light-emitting device layer further includes a plurality of auxiliary electrodes arranged on the same layer as the first electrode, and the auxiliary electrodes are connected to the first electrode of at least one light-emitting device One electrode is arranged correspondingly, the auxiliary electrode is electrically connected to the auxiliary wiring, and the potential of the auxiliary wiring is lower than the potential of the power signal wiring.
  • Embodiments of the present application provide a display panel and a repairing method for the display panel. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.
  • FIG. 1 is a first partial top view of an auxiliary electrode of a display panel 200 provided by an embodiment of the present application
  • FIG. 3 is a schematic cross-sectional structure diagram of a first type of a display panel 200 provided in an embodiment of the present application
  • FIG. 4 is a schematic diagram of a sectional structure provided in an embodiment of the present application.
  • FIG. 5 is a schematic diagram of the third cross-sectional structure of a display panel 200 provided in the embodiment of the present application
  • the embodiment of the present application provides a display panel 200, the display panel 200 includes an array substrate 100 and a plurality of light emitting devices 220, the array substrate 100 includes a power signal wiring 123 and at least one auxiliary wiring 31; the plurality of light emitting devices 220 are arranged in an array On the array substrate 100, the light emitting device 220 includes a first electrode 221 and a second electrode 223, and the second electrode 223 is arranged on the side of the first electrode 221 away from the array substrate 100; A plurality of auxiliary electrodes 226 arranged on the same layer, the auxiliary electrodes 226 are arranged corresponding to the first electrode 221 of at least one light emitting device 220, the auxiliary electrodes 226 are electrically connected to the auxiliary wiring 31, and the potential of the auxiliary wiring 226 is lower than that of the power signal wiring 123 potential.
  • the plurality of light emitting devices 220 may include a red light emitting device 220R, a green light emitting device 220G, and a blue light emitting device 220B, but not limited thereto.
  • the light emitting device 220 includes a first electrode 221 and a second electrode 223 , the second electrode 223 is disposed on a side of the first electrode 221 away from the array substrate 100 , and the light emitting device 220 also includes a light emitting material layer 222 .
  • the first electrode 221 may be an anode
  • the second electrode 223 may be a cathode, but not limited thereto.
  • the first electrode 221 may be a cathode
  • the second electrode 223 may be an anode.
  • the display panel 200 further includes a plurality of auxiliary electrodes 226 arranged on the same layer as the first electrodes 221, the auxiliary electrodes 226 may be made of the same material as the first electrodes 221, and the auxiliary electrodes 226 may be manufactured in the same process as the first electrodes 221. For example, when the first electrode metal layer 22 is patterned to form the first electrode 221 , the first electrode 221 and the auxiliary electrode 226 are simultaneously patterned.
  • the auxiliary electrode 226 is arranged corresponding to the first electrode 221 of at least one light emitting device 220 , that is, the auxiliary electrode 226 is arranged adjacent to the first electrode 221 of at least one light emitting device 220 .
  • a display panel 200 is provided.
  • the array substrate 100 includes at least one auxiliary wiring 31.
  • the display panel 200 further includes a plurality of auxiliary electrodes 226 arranged on the same layer as the first electrode 221.
  • the auxiliary electrodes 226 are connected to at least one
  • the first electrodes 221 of a light-emitting device 220 are arranged adjacent to each other, and the auxiliary electrodes 226 are electrically connected to the auxiliary wiring 31.
  • the first electrodes 221 or/and the auxiliary electrodes 226 corresponding to the bright spots are irradiated by laser light.
  • the first electrode 221 and the auxiliary electrode 226 are melted and then short-circuited, and then a low potential signal is sent to the auxiliary wiring 31 to eliminate the large voltage difference between the first electrode 221 and the second electrode 223, thereby turning the bright spot into a dark spot, so
  • the abnormal bright spots in the display panel 200 can be improved or eliminated, and the yield rate and display quality of the display panel can be improved.
  • the distance between the auxiliary electrode 226 and the corresponding adjacent first electrode 221 is less than or equal to 2 micrometers.
  • the distance between the auxiliary electrode 226 and the corresponding adjacent first electrode 221 is relatively small.
  • the first electrode 221 or/and auxiliary electrode 226 corresponding to the bright spot is irradiated by laser light, and the first It is easier to connect the electrode 221 and the auxiliary electrode 226 after melting, thereby eliminating the bright spots.
  • the distance between the auxiliary electrode 226 and the corresponding adjacent first electrode 221 is less than or equal to 1 micron, which can better repair the bright spot.
  • the array substrate 100 further includes a power signal wiring 123 , and the potential of the auxiliary wiring 226 is lower than that of the power signal wiring 123 .
  • the power signal wiring 123 is the VDD signal wiring in the pixel driving circuit
  • the VDD signal wiring is electrically connected to the first electrode 221 of the light emitting device 220 through the driving transistor T1
  • the potential of the auxiliary wiring 226 is lower than that of the power signal wiring.
  • the potential of the line 123 that is, the potential of the auxiliary electrode 226 is a low potential
  • the potential of the auxiliary electrode 226 is lower than the potential of the power signal line 123.
  • the first electrode 221 is connected to the auxiliary electrode 226 , the potential of the auxiliary wiring 31 will be supplied to the repaired first electrode 221, the large voltage difference between the repaired first electrode 221 and the second electrode 223 will be reduced or eliminated, and the light emitting device 220 that was a bright spot before repairing will not The luminous or luminous brightness is very low, and the light emitting device 220 that was a bright spot before repair is transformed into a dark spot after repair, thereby turning the bright spot into a dark spot.
  • the potential of the auxiliary wiring 31 is the same as that of the power signal wiring of the second electrode, so that the potential of the repaired first electrode 221 is the same as that of the second electrode, thereby eliminating bright spots.
  • the second electrode is the cathode
  • the second electrode power supply signal wiring is the cathode signal wiring VSS
  • the VDD signal wiring and the cathode signal wiring VSS of the pixel driving circuit will not be repeated here.
  • each auxiliary electrode 226 is disposed corresponding to the first electrodes 221 of a plurality of light emitting devices 220 at the same time.
  • the auxiliary electrodes 226 are arranged adjacent to the first electrodes 221 of multiple light-emitting devices 220 at the same time, so that the number of auxiliary electrodes 226 is reduced, and the connection parts and connections between the auxiliary electrodes 226 and the auxiliary wiring 31 The number of holes is reduced, which improves the space utilization rate of the display panel 200 , so that the display panel 200 has more space for other structures.
  • an auxiliary electrode 226 may also be arranged adjacent to the first electrode 221 of a light emitting device 220 .
  • the plurality of light emitting devices 220 includes a red light emitting device 220R, a green light emitting device 220G, and a blue light emitting device 220B, and each auxiliary electrode 226 is connected to the first electrode 221 of at least one red light emitting device 220R, at least one green light emitting device
  • the first electrode 221 of the device 220G and the first electrode 221 of at least one blue light-emitting device 220B are arranged correspondingly.
  • the auxiliary electrode 226 is arranged adjacent to the first electrode 221 of at least one red light emitting device 220R, the first electrode 221 of at least one green light emitting device 220G, and the first electrode 221 of at least one blue light emitting device 220B,
  • the same auxiliary electrode 226 can be connected to the red light emitting device 220R, the green light emitting device 220G, and the blue light emitting device 220B in one pixel, and the red light emitting device 220R, the green light emitting device 220G, and the blue light emitting device 220B in one pixel can be connected to each other.
  • the color light-emitting devices 220B are transformed into dark spots at the same time, which can eliminate the color difference caused by the transformation of a single light-emitting device 220 into a dark spot.
  • the first electrode 221 of at least one light emitting device 220 is connected to the corresponding auxiliary electrode 226 .
  • the first electrode 221 of at least one light emitting device 220 is connected to the corresponding auxiliary electrode 226 in the display panel 200, indicating that the bright spot of the display panel 200 It has been repaired, the yield rate of the display panel 200 is improved, and the display quality of the display panel 200 is improved.
  • This embodiment is the same or similar to the above embodiments, except that the position of the auxiliary wiring 31 is further described.
  • the array substrate 100 further includes a thin film transistor 300 , and a first metal layer 20 between the thin film transistor 300 and the light emitting device 220 , and the auxiliary wiring 31 is arranged on the same layer as the first metal layer 20 .
  • the array substrate 100 includes: a substrate 11 , a thin film transistor 300 disposed on the substrate 11 , a first metal layer 20 disposed on the thin film transistor 300 , auxiliary wiring 31 and the first metal layer 20 Same level settings.
  • the auxiliary wiring 31 is made of the same material as that of the first metal layer 20 and can be manufactured by the same process.
  • the first electrode 221 is connected to the drain of the thin film transistor 300 through the first metal layer 20 .
  • the first metal layer 20 includes a connection electrode 201, and the connection electrode 201 is connected between the first electrode 221 and the drain of the thin film transistor 300, or the connection electrode 201 is connected between the first electrode 221 and the source of the thin film transistor 300 Between, in this embodiment, the source and the drain can be interchanged, which are the two ends of the thin film transistor.
  • the array substrate 100 further includes a thin film transistor 300 , the thin film transistor 300 includes a gate 16 , an active layer 14 and a source and drain 18 , and the auxiliary wiring 31 is arranged on the same layer as the gate 16 or the source and drain 18 .
  • the auxiliary wiring 31 is arranged on the same layer as the gate 16 or the source-drain 18 , which can simplify the manufacturing process of the array substrate 100 .
  • the auxiliary wiring 31 is made of the same material as the gate 16 or the source/drain 18 , and can be manufactured by the same process.
  • the array substrate 100 further includes a second metal layer 12 and a thin film transistor 300 disposed on the second metal layer 12 , and the auxiliary wiring 31 is disposed on the same layer as the second metal layer 12 .
  • FIG. 6 there is a second metal layer 12 between the substrate 11 and the thin film transistor 300 , and the arrangement of the auxiliary wiring 31 and the second metal layer 12 on the same layer can simplify the manufacturing process of the array substrate 100 .
  • the auxiliary wiring 31 is made of the same material as that of the second metal layer 12 and can be manufactured by the same process.
  • the second metal layer 12 can be patterned to form light-shielding electrodes 121 (LS), and the second metal layer 12 can be patterned to form structures such as power signal traces 123 and cathode signal traces VSS, which will not be described in detail here.
  • LS light-shielding electrodes 121
  • VSS cathode signal traces
  • FIG. 3 exemplifies and illustrates that the array substrate 100 includes a substrate 11, a second metal layer 12, a first insulating layer 13, a semiconductor layer 14, a gate insulating layer 15, a gate 16, and an interlayer insulating layer stacked in sequence. 17. Source and drain layers 18, a second insulating layer 19, a first metal layer 20, and a flat layer 21.
  • FIG. 3 illustrates that the display panel 200 further includes a first electrode metal layer 22 disposed on the flat layer 21 of the array substrate 100, a pixel definition layer 23 disposed on the first electrode metal layer 22, and a pixel definition layer 23 disposed on the light-emitting Encapsulation layer 24 on device 220 .
  • the first electrode metal layer 22 includes a first electrode 221 and an auxiliary electrode 226 .
  • 3 to 6 illustrate that the array substrate 100 includes thin film transistors 300, and each thin film transistor includes a semiconductor layer 14, a gate 16, a gate insulating layer 15 between the semiconductor layer 14 and the gate 16,
  • the source electrode 182 and the drain electrode 181 are formed by metal patterning in the source and drain layer 18 .
  • source 182 and the drain 181 are interchangeable.
  • FIG. 3 exemplifies a layer structure of the array substrate 100
  • the layer structure of the array substrate 100 is not limited thereto.
  • the power signal trace 123 and the cathode signal trace VSS may not use the second metal layer 12. It can also be fabricated and formed with other layers of metal, for example, the thin film transistor 300 of the array substrate 100 has a top gate structure or a bottom gate structure.
  • each layer of the array substrate 100 and the material of each structure of the thin film transistor 300 may be any material in the prior art, which will not be repeated here.
  • the structure of the display panel 200 may further include a pixel definition layer 23 and an encapsulation layer 24 disposed on the second electrode 223 , which will not be repeated here.
  • the position of the film layer of the auxiliary wiring 31 is further introduced, which can simplify the manufacturing process of the array substrate 100 .
  • FIG. 7 is a schematic circuit schematic diagram of a method for repairing a display panel 200 provided in an embodiment of the present application
  • Fig. 8 is a schematic diagram of a repair method provided in an embodiment of the present application.
  • FIG. 9 is a schematic diagram of the first cross-sectional structure of a repaired display panel 200 provided in an embodiment of the present application
  • FIG. 10 is a schematic diagram of a repaired display panel 200 provided in an embodiment of the present application
  • FIG. 11 is a schematic diagram of the process steps of a method for repairing the display panel 200 provided by the embodiment of the present application.
  • This embodiment provides a method for repairing a display panel.
  • the display panel is repaired by using step S100 or/and step S200.
  • Step S100 irradiating with laser light, so that the auxiliary electrode is electrically connected to the corresponding first electrode by melting.
  • the auxiliary electrode 226 is electrically connected to the corresponding first electrode 221 through melting by irradiation with a laser 50 .
  • auxiliary electrode 226 or/and the first electrode 221 are fused to form an auxiliary connecting electrode 2216 (shown in a dotted circle in FIG. 9 ), and the auxiliary connecting electrode 2216 connects the auxiliary electrode 226 and the corresponding first electrode 221 .
  • Step S200 supply potential to the auxiliary wiring, and the auxiliary wiring supplies an electric signal to the first electrode connected to the auxiliary electrode.
  • auxiliary wiring 226 a potential is supplied to the auxiliary wiring 226 , and the auxiliary wiring 31 supplies an electric signal to the first electrode 221 connected to the auxiliary electrode 226 .
  • auxiliary wiring 31 has been described in the above embodiments, and will not be repeated here.
  • the first electrode 221 of at least one light emitting device 220 is connected to the corresponding auxiliary electrode 226 .
  • the first electrode 221 of at least one light emitting device 220 is connected to the corresponding auxiliary electrode 226 in the display panel 200, indicating that the bright spot of the display panel 200 It has been repaired, the yield rate of the display panel 200 is improved, and the display quality of the display panel 200 is improved.
  • FIG. 10 an example is shown to illustrate a reason for post-production bright spots.
  • the power signal traces 123 are short-circuited with the light-shielding electrode 121 and the drain electrode 181.
  • the residual metal 1214 is connected between the light-shielding electrode 121 and the power signal wiring 123, so that the power signal wiring 123 is not directly electrically connected to the first electrode 221 of the light emitting device 220 through the driving transistor T1 of the pixel driving circuit, so that the light emitting device
  • the switch of 220 is not controlled by the pixel driving circuit.
  • This light emitting device 220 becomes a bright spot.
  • Figure 7 shows that the first electrode is an anode, the second electrode is a cathode, and the auxiliary wiring 31 supplies the potential of the cathode signal wiring VSS, or The auxiliary wire 31 is connected to the cathode signal wire VSS.
  • each sub-pixel includes a pixel driving circuit.
  • the pixel driving circuit includes at least one driving transistor T1, at least one switching transistor T2, and at least one capacitor C.
  • the pixel driving circuit also drives the light emitting device 220 so that the light emitting device 220 emits light, and the pixel driving circuit is electrically connected to the data signal line Data, the scan signal line Scan, the power signal line VDD, and the cathode signal line VSS.
  • the power signal wiring VDD is electrically connected to the source of the driving transistor T1
  • the power signal wiring VDD is electrically connected to the first electrode of the light emitting device 220 through the driving transistor T1.
  • the cathode signal wire VSS is electrically connected to the cathode (second electrode 223 ) of the light emitting device 220 , and the cathode signal wire VSS provides the cathode of the light emitting device 220 with an electrical signal.
  • the auxiliary electrode 226 or/and the first electrode 221 are melted to form an auxiliary connection electrode 2216, and the auxiliary connection electrode 2216 connects the auxiliary electrode 226 and the corresponding first electrode. 221, eliminate the large voltage difference between the first electrode 221 and the second electrode 223, thereby converting the bright spot into a dark spot, so that the abnormal bright spot in the display panel 200 can be improved or eliminated, and the yield and display of the display panel can be improved. quality.
  • the pixel driving circuit includes but is not limited to the structure shown in FIG. 7 , the pixel driving circuit can be any pixel driving circuit in the prior art, and the detailed structure of the pixel driving circuit will not be repeated here.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板(200)及显示面板(200)的修复方法,显示面板(200)包括:阵列基板(100),包括电源信号走线(123)和至少一条辅助走线(31);多个发光器件(220),包括第一电极(221)和第二电极(223);与第一电极(221)同层设置的多个辅助电极(226),辅助电极(226)电连接辅助走线(31)。当存在亮点时,通过激光照射将亮点对应的第一电极(221)与辅助电极(226)熔融后短接,可以消除亮点异常。

Description

显示面板及显示面板的修复方法 技术领域
本申请涉及显示领域,具体涉及一种显示面板及显示面板的修复方法。
背景技术
有机发光显示面板(OLED)已经广泛用于人们生活中,例如手机、电脑等的显示屏幕。在有机发光显示面板的生产制造中,由于各种原因导致显示面板存在亮点,例如显示面板生产过程中存在颗粒(particle)导致的短路、走线或电极刻蚀残留导致的短路、阳极短路、绝缘层开孔导致的异常等,显示面板的亮点不但降低了显示面板的良率,还降低了显示品质。
因此,需要提供一种显示面板或显示面板的修复方法,以改善或消除显示面板中的亮点异常,提升显示面板的良率和显示品质。
技术问题
本申请实施例提供了一种显示面板及显示面板的修复方法,可以改善或消除显示面板中的亮点异常的问题,以及亮点异常所导致提升显示面板的良率下降和显示品质下降的问题。
技术解决方案
本申请实施例提供了一种显示面板,其中,包括:
阵列基板,包括电源信号走线和至少一条辅助走线;
多个发光器件,阵列设置于所述阵列基板上,所述发光器件包括第一电极和第二电极,所述第二电极设置于所述第一电极远离所述阵列基板的一侧;
其中,所述显示面板还包括与所述第一电极同层设置的多个辅助电极,所述辅助电极与至少一所述发光器件的所述第一电极对应设置,所述辅助电极电连接所述辅助走线,所述辅助走线的电位小于所述电源信号走线的电位。
可选的,在本申请的一些实施例中,其中,所述辅助电极与对应的所述第一电极之间的距离小于或等于2微米。
可选的,在本申请的一些实施例中,其中,每一所述辅助电极与多个所述发光器件的所述第一电极对应设置。
可选的,在本申请的一些实施例中,其中,多个所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件,每一所述辅助电极与至少一个所述红色发光器件的所述第一电极、至少一个所述绿色发光器件的所述第一电极、至少一个所述蓝色发光器件的所述第一电极对应设置。
可选的,在本申请的一些实施例中,其中,至少一所述发光器件的所述第一电极与对应的所述辅助电极连接。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述第一电极通过所述第一金属层连接所述薄膜晶体管的漏极。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
可选的,在本申请的一些实施例中,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
相应的,本申请实施例还提供了一种显示面板的修复方法,其中,在上述任一项所述的显示面板中,所述显示面板的修复方法包括如下步骤:
步骤S100:通过激光照射,使得所述辅助电极与对应的所述第一电极通过熔融的方式电连接;
步骤S200:给所述辅助走线供给电位,所述辅助走线供给连接所述辅助电极的所述第一电极以电信号。
可选的,在本申请的一些实施例中,其中,所述辅助电极与对应的所述第一电极之间的距离小于或等于2微米。
可选的,在本申请的一些实施例中,其中,每一所述辅助电极与多个所述发光器件的所述第一电极对应设置。
有益效果
本申请实施例提供了一种显示面板及显示面板的修复方法,显示面板包括:阵列基板,包括电源信号走线和至少一条辅助走线;多个发光器件,阵列设置于阵列基板上,发光器件包括第一电极和第二电极,第二电极设置于第一电极远离阵列基板的一侧;其中,发光器件层还包括与第一电极同层设置的多个辅助电极,辅助电极与至少一发光器件的第一电极对应设置,辅助电极电连接辅助走线,辅助走线的电位小于电源信号走线的电位。当显示面板存在亮点时,通过激光照射将亮点对应的第一电极与辅助电极熔融后短接,再给辅助走线一个低电位信号,消除第一电极和第二电极之间的较大电压差异,从而将亮点转变为暗点,因此可以改善或消除显示面板中的亮点异常,并提升显示面板的良率和显示品质。
附图说明
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本申请一实施例提供的一种显示面板的辅助电极的第一种局部俯视示意图;
图2是本申请一实施例提供的一种显示面板的辅助电极的第二种局部俯视示意图;
图3是本申请一实施例提供的一种显示面板的第一种截面结构示意图;
图4是本申请一实施例提供的一种显示面板的第二种截面结构示意图;
图5是本申请一实施例提供的一种显示面板的第三种截面结构示意图;
图6是本申请一实施例提供的一种显示面板的第四种截面结构示意图;
图7是本申请一实施例提供的一种显示面板的修复方法的电路原理示意图;
图8是本申请一实施例提供的一种显示面板的修复方法的修复过程示意图;
图9是本申请一实施例提供的一种修复后的显示面板的第一种截面结构示意图;
图10是本申请一实施例提供的一种修复后的显示面板的第二种截面结构示意图;
图11是本申请一实施例提供的一种显示面板的修复方法的流程步骤示意图。
本发明的实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。此外,应当理解的是,此处所描述的具体实施方式仅用于说明和解释本申请,并不用于限制本申请。在本申请中,在未作相反说明的情况下,使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下,具体为附图中的图面方向;而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供了一种显示面板,一种显示面板,包括:阵列基板,包括电源信号走线和至少一条辅助走线;多个发光器件,阵列设置于阵列基板上,发光器件包括第一电极和第二电极,第二电极设置于第一电极远离阵列基板的一侧;其中,发光器件层还包括与第一电极同层设置的多个辅助电极,辅助电极与至少一发光器件的第一电极对应设置,辅助电极电连接辅助走线,辅助走线的电位小于电源信号走线的电位。
本申请实施例提供了一种显示面板及显示面板的修复方法。以下分别进行详细说明。需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。
实施例一、
请参阅图1、图2、图3、图4、图5,图1为本申请实施例提供的一种显示面板200的辅助电极的第一种局部俯视示意图;图2为本申请实施例提供的一种显示面板200的辅助电极的第二种局部俯视示意图;图3为本申请实施例提供的一种显示面板200的第一种截面结构示意图;图4为本申请实施例提供的一种显示面板200的第二种截面结构示意图;图5为本申请实施例提供的一种显示面板200的第三种截面结构示意图;图6为本申请实施例提供的一种显示面板200的第四种截面结构示意图。
本申请实施例提供了一种显示面板200,显示面板200包括阵列基板100和多个发光器件220,阵列基板100包括电源信号走线123和至少一条辅助走线31;多个发光器件220阵列设置于阵列基板100上,发光器件220包括第一电极221和第二电极223,第二电极223设置于第一电极221远离阵列基板100的一侧;其中,显示面板200还包括与第一电极221同层设置的多个辅助电极226,辅助电极226与至少一发光器件220的第一电极221对应设置,辅助电极226电连接辅助走线31,辅助走线226的电位小于电源信号走线123的电位。
具体的,多个发光器件220可以包括红色发光器件220R、绿色发光器件220G、蓝色发光器件220B,但不限于此。
具体的,发光器件220包括第一电极221和第二电极223,第二电极223设置于第一电极221远离阵列基板100的一侧,发光器件220还包括发光材料层222。
具体的,第一电极221可以为阳极,第二电极223可以为阴极,但不限于此,例如第一电极221可以为阴极,第二电极223可以为阳极。
具体的,显示面板200还包括与第一电极221同层设置的多个辅助电极226,辅助电极226可以与第一电极221为相同材料,辅助电极226可以与第一电极221为同工艺制作而成,例如在图案化第一电极金属层22形成第一电极221时,同时图案化形成了第一电极221和辅助电极226。
具体的,辅助电极226与至少一发光器件220的第一电极221对应设置,即辅助电极226与至少一发光器件220的第一电极221相邻设置。
在本实施例中,提供了一种显示面板200,阵列基板100包括至少一条辅助走线31,显示面板200还包括与第一电极221同层设置的多个辅助电极226,辅助电极226与至少一发光器件220的第一电极221相邻设置,辅助电极226电连接辅助走线31,当显示面板200存在亮点时,通过激光照射将亮点对应的第一电极221或/和辅助电极226,第一电极221与辅助电极226熔融后短接,再给辅助走线31一个低电位信号,消除第一电极221和第二电极223之间的较大电压差异,从而将亮点转变为暗点,因此可以改善或消除显示面板200中的亮点异常,并提升显示面板的良率和显示品质。
在一些实施例中,辅助电极226与对应的相邻第一电极221之间的距离小于或等于2微米。
具体的,辅助电极226与对应的相邻第一电极221之间的距离较小,当显示面板200存在亮点时,通过激光照射将亮点对应的第一电极221或/和辅助电极226,第一电极221与辅助电极226才更容易熔融后连接,从而消除亮点。
进一步的,辅助电极226与对应的相邻第一电极221之间的距离小于或等于1微米,可以更好的修复亮点。
在一些实施例中,阵列基板100还包括电源信号走线123,辅助走线226的电位小于电源信号走线123的电位。
具体的,电源信号走线123为像素驱动电路中的VDD信号走线,VDD信号走线会通过驱动晶体管T1电连接至发光器件220的第一电极221,辅助走线226的电位小于电源信号走线123的电位,即辅助电极226的电位为低电位,辅助电极226的电位小于电源信号走线123的电位,当显示面板200存在亮点时,进行修复后,第一电极221与辅助电极226连接,辅助走线31的电位会供给到修复后的第一电极221,修复后的第一电极221和第二电极223的较大电压差异被减小或消除,修复前为亮点的发光器件220不发光或发光亮度很低,修复前为亮点的发光器件220从而转变为修复后的暗点,从而将亮点转变为暗点。
进一步的,辅助走线31的电位与第二电极电源信号走线的电位相同,使得修复后的第一电极221的电位与第二电极的电位相同,从而消除亮点。
进一步的,第二电极为阴极,第二电极电源信号走线则为阴极信号走线VSS,像素驱动电路的VDD信号走线和阴极信号走线VSS在此不再赘述。
在一些实施例中,每一辅助电极226同时与多个发光器件220的第一电极221对应设置。
具体的,如图1所示,辅助电极226同时与多个发光器件220的第一电极221相邻设置,使得辅助电极226的数量减小,辅助电极226与辅助走线31的连接部位和连接孔的数量减小,提升显示面板200的空间利用率,从而显示面板200具有更多空间设置其他结构。
具体的,如图2所示,也可以设置一个辅助电极226与一个发光器件220的第一电极221相邻设置。
在一些实施例中,多个发光器件220包括红色发光器件220R、绿色发光器件220G、蓝色发光器件220B,每一辅助电极226与至少一个红色发光器件220R的第一电极221、至少一个绿色发光器件220G的第一电极221、至少一个蓝色发光器件220B的第一电极221对应设置。
如图2所示,辅助电极226与至少一个红色发光器件220R的第一电极221、至少一个绿色发光器件220G的第一电极221、至少一个蓝色发光器件220B的第一电极221相邻设置,当出现亮点时,可以将同一个辅助电极226与一个像素内的红色发光器件220R、绿色发光器件220G、蓝色发光器件220B连接,将一个像素内的红色发光器件220R、绿色发光器件220G、蓝色发光器件220B同时转变为暗点,可以消除单个发光器件220转变为暗点带来的颜色差异。
在一些实施例中,至少一发光器件220的第一电极221与对应的辅助电极226连接。
具体的,当显示面板200具有亮点时,显示面板200被修复后,显示面板200中就存在至少一发光器件220的第一电极221与对应的辅助电极226连接的情况,说明显示面板200的亮点已被修复,显示面板200的良率被提升,显示面板200显示品质被提升。
实施例二、
本实施例与上述实施例相同或相似,不同之处在于进一步描述了辅助走线31的位置。
在一些实施例中,阵列基板100还包括薄膜晶体管300、薄膜晶体管300与发光器件220之间的第一金属层20,辅助走线31与第一金属层20同层设置。
具体的,如图3所示,阵列基板100包括:基底11、设置于基底11上的薄膜晶体管300、设置于薄膜晶体管300上的第一金属层20,辅助走线31与第一金属层20同层设置。
具体的,辅助走线31与第一金属层20的材料相同,可以同工艺制作而成。
在一些实施例中,第一电极221通过第一金属层20连接薄膜晶体管300的漏极。
具体的,第一金属层20包括连接电极201,连接电极201连接在第一电极221和薄膜晶体管300的漏极之间,或者连接电极201连接在第一电极221和薄膜晶体管300的源极之间,在本实施例中,源极和漏极可以互换,为薄膜晶体管的两端。
在一些实施例中,阵列基板100还包括薄膜晶体管300,薄膜晶体管300包括栅极16、有源层14和源漏极18,辅助走线31与栅极16或源漏极18同层设置。
具体的,如图4、图5所示,辅助走线31与栅极16或源漏极18同层设置,可以简化阵列基板100的制作工艺。
具体的,辅助走线31与栅极16或源漏极18的材料相同,可以同工艺制作而成。
在一些实施例中,阵列基板100还包第二金属层12、设置于第二金属层12上的薄膜晶体管300,辅助走线31与第二金属层12同层设置。
具体的,如图6所示,基底11与薄膜晶体管300之间还包括第二金属层12,辅助走线31与第二金属层12同层设置可以简化阵列基板100的制作工艺。
具体的,辅助走线31与第二金属层12的材料相同,可以同工艺制作而成。
具体的,第二金属层12可以图案化形成遮光电极121(LS),第二金属层12可以图案化形成电源信号走线123、阴极信号走线VSS等结构,在此不做赘述。
具体的,图3中举例示意了阵列基板100包括依次层叠设置的基底11、第二金属层12、第一绝缘层13、半导体层14、栅极绝缘层15、栅极16、层间绝缘层17、源漏极层18、第二绝缘层19、第一金属层20、平坦层21。
具体的,图3中举例示意了显示面板200还包括设置于阵列基板100的平坦层21上的第一电极金属层22,设置于第一电极金属层22上的像素定义层23,设置于发光器件220上的封装层24。第一电极金属层22包括第一电极221和辅助电极226。具体的,图3至图6中举例示意了阵列基板100包括薄膜晶体管300,每一薄膜晶体管均包括半导体层14、栅极16、半导体层14与栅极16之间的栅极绝缘层15、源漏极层18金属图案化形成的源极182和漏极181。
需要说明的是,源极182和漏极181是可以互换的。
需要说明的是,虽然图3举例示意了一种阵列基板100的层结构,但是阵列基板100的层结构不限于此,例如电源信号走线123、阴极信号走线VSS可以不用第二金属层12制作形成,也可以用其他层金属制作形成,例如阵列基板100的薄膜晶体管300为顶栅结构或底栅结构。
需要说明的是,阵列基板100的各层材料和薄膜晶体管300的各结构的材料可以为任一种现有技术中的材料,在此不再赘述。
需要说明的是,显示面板200的结构还可以包括像素定义层23,设置于第二电极223上的封装层24,在此不再赘述。
在本实施例中,进一步介绍了辅助走线31的膜层位置,可以简化阵列基板100的制作工艺。
实施例三、
请参阅图7、图8、图9、图10、图11,图7为本申请实施例提供的一种显示面板200的修复方法的电路原理示意图;图8为本申请实施例提供的一种显示面板200的修复方法的修复过程示意图;图9为本申请实施例提供的一种修复后的显示面板200的第一种截面结构示意图;图10为本申请实施例提供的一种修复后的显示面板200的第二种截面结构示意图;图11为本申请实施例提供的一种显示面板200的修复方法的流程步骤示意图。
本实施例提供了一种显示面板的修复方法,在上述实施例中的任一项显示面板200中,采用步骤S100或/和步骤S200将显示面板进行修复。
步骤S100:通过激光照射,使得辅助电极与对应的第一电极通过熔融的方式电连接。
具体的,如图8所示,通过激光50照射,使得辅助电极226与对应的第一电极221通过熔融的方式电连接。
具体的,辅助电极226或/和第一电极221熔融形成辅助连接电极2216(如图9虚线圈中所示),辅助连接电极2216连接辅助电极226与对应的第一电极221。
步骤S200:给辅助走线供给电位,辅助走线供给连接辅助电极的第一电极以电信号。
具体的,给辅助走线226供给电位,辅助走线31供给连接辅助电极226的第一电极221以电信号。
具体的,辅助走线31的电位在上述实施例中已经说明,在此不再赘述。
具体的,如图9所示,显示面板修复后,至少一发光器件220的第一电极221与对应的辅助电极226连接。
具体的,当显示面板200具有亮点时,显示面板200被修复后,显示面板200中就存在至少一发光器件220的第一电极221与对应的辅助电极226连接的情况,说明显示面板200的亮点已被修复,显示面板200的良率被提升,显示面板200显示品质被提升。
具体的,如图10所示,举例示意了一种亮点产后生原因,在第二金属层12的制作过程中,由于刻蚀残留,电源信号走线123与遮光电极121、漏极181短接,残留金属1214连接在遮光电极121和电源信号走线123之间,使得电源信号走线123没有通过像素驱动电路的驱动晶体管T1而直接电连接发光器件220的第一电极221,使得此发光器件220的开关不受像素驱动电路的控制,此发光器件220成为亮点,通过上述显示面板200的辅助电极226的设置,以及通过上述显示面板的修复方法的修复后,此发光器件的第一电极221与辅助电极226连接,从而转变为暗点。
具体的,如图7所示,用电路图说明本申请实施例的修复原理,图7示意了第一电极为阳极、第二电极为阴极、辅助走线31供给阴极信号走线VSS的电位,或者辅助走线31与阴极信号走线VSS连接。
具体的,如图7所示,子像素均包括像素驱动电路,像素驱动电路包括至少一驱动晶体管T1、至少一开关晶体管T2、至少一电容C,像素驱动电路还驱动发光器件220以使得发光器件220发光,像素驱动电路电连接数据信号走线Data、扫描信号走线Scan、电源信号走线VDD、以及阴极信号走线VSS。其中,电源信号走线VDD电连接驱动晶体管T1的源极,电源信号走线VDD并通过驱动晶体管T1电连接至发光器件220的第一电极。其中,阴极信号走线VSS电连接至发光器件220的阴极(第二电极223),阴极信号走线VSS提供发光器件220的阴极以电信号。
具体的,如图10所示,当采用上述显示面板的修复方法后,辅助电极226或/和第一电极221熔融形成辅助连接电极2216,辅助连接电极2216连接辅助电极226与对应的第一电极221,消除第一电极221和第二电极223之间的较大电压差异,从而将亮点转变为暗点,因此可以改善或消除显示面板200中的亮点异常,并提升显示面板的良率和显示品质。
需要说明的是,像素驱动电路包括但不限于图7示意的结构,像素驱动电路可以为现有技术中任一项的像素驱动电路,像素驱动电路的详细结构在此不再赘述。
以上对本申请实施例所提供的一种显示面板及显示面板的修复方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的方法及其核心思想;同时,对于本领域的技术人员,依据本申请的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板,其中,包括:
    阵列基板,包括电源信号走线和至少一条辅助走线;
    多个发光器件,阵列设置于所述阵列基板上,所述发光器件包括第一电极和第二电极,所述第二电极设置于所述第一电极远离所述阵列基板的一侧;
    其中,所述显示面板还包括与所述第一电极同层设置的多个辅助电极,所述辅助电极与至少一所述发光器件的所述第一电极对应设置,所述辅助电极电连接所述辅助走线,所述辅助走线的电位小于所述电源信号走线的电位。
  2. 如权利要求1所述的显示面板,其中,所述辅助电极与对应的所述第一电极之间的距离小于或等于2微米。
  3. 如权利要求1所述的显示面板,其中,每一所述辅助电极与多个所述发光器件的所述第一电极对应设置。
  4. 如权利要求3所述的显示面板,其中,多个所述发光器件包括红色发光器件、绿色发光器件、蓝色发光器件,每一所述辅助电极与至少一个所述红色发光器件的所述第一电极、至少一个所述绿色发光器件的所述第一电极、至少一个所述蓝色发光器件的所述第一电极对应设置。
  5. 如权利要求1所述的显示面板,其中,至少一所述发光器件的所述第一电极与对应的所述辅助电极连接。
  6. 如权利要求1所述的显示面板,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
  7. 如权利要求2所述的显示面板,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
  8. 如权利要求3所述的显示面板,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
  9. 如权利要求5所述的显示面板,其中,所述阵列基板还包括薄膜晶体管、薄膜晶体管与所述发光器件之间的第一金属层,所述辅助走线与所述第一金属层同层设置。
  10. 如权利要求6所述的显示面板,其中,所述第一电极通过所述第一金属层连接所述薄膜晶体管的漏极。
  11. 如权利要求1所述的显示面板,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
  12. 如权利要求2所述的显示面板,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
  13. 如权利要求3所述的显示面板,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
  14. 如权利要求5所述的显示面板,其中,所述阵列基板还包括薄膜晶体管,所述薄膜晶体管包括栅极、有源层和源漏极,所述辅助走线与所述栅极或所述源漏极同层设置。
  15. 如权利要求1所述的显示面板,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
  16. 如权利要求2所述的显示面板,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
  17. 如权利要求3所述的显示面板,其中,所述阵列基板还包第二金属层、设置于所述第二金属层上的薄膜晶体管,所述辅助走线与所述第二金属层同层设置。
  18. 一种显示面板的修复方法,其中,在如权利要求1所述的显示面板中,所述显示面板的修复方法包括如下步骤:
    步骤S100:通过激光照射,使得所述辅助电极与对应的所述第一电极通过熔融的方式电连接;
    步骤S200:给所述辅助走线供给电位,所述辅助走线供给连接所述辅助电极的所述第一电极以电信号。
  19. 如权利要求18所述的显示面板的修复方法,其中,所述辅助电极与对应的所述第一电极之间的距离小于或等于2微米。
  20. 如权利要求19所述的显示面板的修复方法,其中,每一所述辅助电极与多个所述发光器件的所述第一电极对应设置。
PCT/CN2022/081184 2022-02-28 2022-03-16 显示面板及显示面板的修复方法 WO2023159696A1 (zh)

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