WO2023156876A1 - 半導体装置、及び半導体装置の作製方法 - Google Patents

半導体装置、及び半導体装置の作製方法 Download PDF

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Publication number
WO2023156876A1
WO2023156876A1 PCT/IB2023/051026 IB2023051026W WO2023156876A1 WO 2023156876 A1 WO2023156876 A1 WO 2023156876A1 IB 2023051026 W IB2023051026 W IB 2023051026W WO 2023156876 A1 WO2023156876 A1 WO 2023156876A1
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Prior art keywords
layer
insulating layer
conductive
semiconductor
conductive layer
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PCT/IB2023/051026
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English (en)
French (fr)
Japanese (ja)
Inventor
保坂泰靖
島行徳
神長正美
中田昌孝
肥塚純一
岡崎健一
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to KR1020247030094A priority Critical patent/KR20240149930A/ko
Priority to CN202380018329.8A priority patent/CN118591888A/zh
Priority to US18/833,581 priority patent/US20250151538A1/en
Priority to JP2024500693A priority patent/JPWO2023156876A1/ja
Publication of WO2023156876A1 publication Critical patent/WO2023156876A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements

Definitions

  • One embodiment of the present invention relates to semiconductor devices, display devices, display modules, and electronic devices.
  • One embodiment of the present invention relates to a method for manufacturing a semiconductor device and a method for manufacturing a display device.
  • one aspect of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (eg, touch sensors), input/output devices (eg, touch panels), and the like. or methods of manufacturing them.
  • Semiconductor devices having transistors are widely applied to display devices and electronic devices, and there is a demand for higher integration and higher speed of semiconductor devices. For example, when a semiconductor device is applied to a high-definition display device, a highly integrated semiconductor device is required. As one of means for increasing the degree of integration of transistors, development of fine-sized transistors is underway.
  • VR virtual reality
  • AR augmented reality
  • SR alternative reality
  • MR mixed reality
  • Display devices for XR are desired to have high definition and high color reproducibility in order to enhance the sense of reality and immersion. Examples of applicable display devices include liquid crystal display devices, organic EL (Electro Luminescence) elements, light emitting devices including light emitting devices such as light emitting diodes (LEDs), and the like.
  • LEDs light emitting diodes
  • Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element).
  • An object of one embodiment of the present invention is to provide a semiconductor device including a fine-sized transistor and a manufacturing method thereof. Another object of one embodiment of the present invention is to provide a semiconductor device including a transistor with high on-state current and a manufacturing method thereof. Another object of one embodiment of the present invention is to provide a semiconductor device with favorable electrical characteristics and a manufacturing method thereof. Another object of one embodiment of the present invention is to provide a highly reliable semiconductor device and a manufacturing method thereof. Another object of one embodiment of the present invention is to provide a method for manufacturing a semiconductor device with high productivity. Another object of one embodiment of the present invention is to provide a novel semiconductor device and a manufacturing method thereof.
  • One embodiment of the present invention is a semiconductor device including a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer.
  • a first insulating layer is provided on the first conductive layer.
  • the first insulating layer has a first opening reaching the first conductive layer.
  • the semiconductor layer is in contact with the top and side surfaces of the first insulating layer and the top surface of the first conductive layer.
  • a second conductive layer is provided on the semiconductor layer.
  • the second conductive layer has a second opening in a region overlapping the first opening.
  • a second insulating layer is provided on the semiconductor layer and the second conductive layer.
  • a third conductive layer is provided on the second insulating layer.
  • the first insulating layer has a laminated structure of a third insulating layer and a fourth insulating layer on the third insulating layer.
  • the fourth insulating layer has a region with a higher film density
  • One embodiment of the present invention is a semiconductor device including a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer.
  • a first insulating layer is provided on the first conductive layer.
  • the first insulating layer has a first opening reaching the first conductive layer.
  • the semiconductor layer is in contact with the top and side surfaces of the first insulating layer and the top surface of the first conductive layer.
  • a second conductive layer is provided on the semiconductor layer.
  • the second conductive layer has a second opening in a region overlapping the first opening.
  • a second insulating layer is provided on the semiconductor layer and the second conductive layer.
  • a third conductive layer is provided on the second insulating layer.
  • the first insulating layer has a laminated structure of a third insulating layer and a fourth insulating layer on the third insulating layer.
  • the fourth insulating layer has a region with a higher nitrogen content
  • the first insulating layer preferably has a fifth insulating layer.
  • the fifth insulating layer is preferably located between the third insulating layer and the first conductive layer.
  • the fifth insulating layer preferably has a region with a higher film density than the third insulating layer.
  • the first insulating layer preferably has a fifth insulating layer.
  • the fifth insulating layer is preferably located between the third insulating layer and the first conductive layer.
  • the fifth insulating layer preferably has a region with a higher nitrogen content than the third insulating layer.
  • the film thickness of the first insulating layer is preferably 0.01 ⁇ m or more and less than 3 ⁇ m.
  • the first conductive layer preferably contains an oxide conductor.
  • the second conductive layer preferably contains an oxide conductor.
  • a first conductive film is formed, the first conductive film is processed to form a first conductive layer, and a first insulating film is formed over the first conductive layer.
  • processing the first insulating film to form a first insulating layer having a first opening reaching the first conductive layer; a second conductive film is formed over the semiconductor layer; the second conductive film is processed; and a second conductive layer having a second opening in a region overlapping with the first opening is formed.
  • is formed, a second insulating layer is formed over the semiconductor layer and the second conductive layer, and a third conductive layer is formed over the second insulating layer.
  • the first insulating layer has a laminated structure of a third insulating layer and a fourth insulating layer on the third insulating layer.
  • the fourth insulating layer has a region with a higher film density than the third insulating layer.
  • a first conductive film is formed, the first conductive film is processed to form a first conductive layer, and a first insulating film is formed over the first conductive layer.
  • processing the first insulating film to form a first insulating layer having a first opening reaching the first conductive layer; a second conductive film is formed over the semiconductor layer; the second conductive film is processed; and a second conductive layer having a second opening in a region overlapping with the first opening is formed.
  • is formed, a second insulating layer is formed over the semiconductor layer and the second conductive layer, and a third conductive layer is formed over the second insulating layer.
  • the first insulating layer has a laminated structure of a third insulating layer and a fourth insulating layer on the third insulating layer.
  • the fourth insulating layer has a region with a higher nitrogen content than the third insulating layer.
  • a semiconductor device including a fine-sized transistor and a manufacturing method thereof can be provided.
  • a semiconductor device including a transistor with high on-state current and a manufacturing method thereof can be provided.
  • a semiconductor device with favorable electrical characteristics and a manufacturing method thereof can be provided.
  • a highly reliable semiconductor device and a manufacturing method thereof can be provided.
  • a method for manufacturing a semiconductor device with high productivity can be provided.
  • one embodiment of the present invention can provide a novel semiconductor device and a manufacturing method thereof.
  • FIG. 1A is a top view showing an example of a semiconductor device.
  • 1B and 1C are cross-sectional views showing examples of semiconductor devices.
  • FIG. 2 is a perspective view showing an example of a semiconductor device.
  • 3A to 3C are perspective views showing examples of semiconductor devices.
  • FIG. 4A is a top view showing an example of a semiconductor device.
  • FIG. 4B is a cross-sectional view showing an example of a semiconductor device;
  • FIG. 5A is a top view showing an example of a semiconductor device.
  • 7A and 7B are cross-sectional views showing examples of semiconductor devices.
  • FIG. 8A is a top view showing an example of a semiconductor device.
  • 8B and 8C are cross-sectional views showing examples of semiconductor devices.
  • FIG. 9A is a top view showing an example of a semiconductor device.
  • FIG. 9B is a cross-sectional view showing an example of a semiconductor device;
  • FIG. 10A is a top view showing an example of a semiconductor device;
  • 10B and 10C are cross-sectional views showing examples of semiconductor devices.
  • 11A1 and 11B1 are perspective views illustrating an example of a method for manufacturing a semiconductor device.
  • 11A2 and 11B2 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device.
  • 12A1 and 12B1 are perspective views illustrating an example of a method for manufacturing a semiconductor device.
  • 12A2 and 12B2 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device.
  • 13A1 and 13B1 are perspective views illustrating an example of a method for manufacturing a semiconductor device.
  • 13A2 and 13B2 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device.
  • 14A1 and 14B1 are perspective views illustrating an example of a method for manufacturing a semiconductor device.
  • 14A2 and 14B2 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device.
  • 15A1 and 15B1 are perspective views illustrating an example of a method for manufacturing a semiconductor device.
  • 15A2 and 15B2 are cross-sectional views illustrating an example of a method for manufacturing a semiconductor device.
  • FIG. 16 is a perspective view showing an example of a display device.
  • FIG. 17 is a cross-sectional view showing an example of a display device.
  • 18A and 18B are cross-sectional views showing examples of display devices.
  • FIG. 19 is a cross-sectional view showing an example of a display device.
  • FIG. 20 is a cross-sectional view showing an example of a display device.
  • 21A to 21C are cross-sectional views showing examples of display devices.
  • 22A and 22B are cross-sectional views showing an example of a display device.
  • FIG. 23 is a cross-sectional view showing an example of a display device.
  • FIG. 24 is a cross-sectional view showing an example of a display device.
  • FIG. 25 is a cross-sectional view showing an example of a display device.
  • 26A to 26H are diagrams showing examples of pixels.
  • 27A to 27K are diagrams showing examples of pixels.
  • 28A to 28F are diagrams showing configuration examples of light emitting devices.
  • 29A to 29C are diagrams showing configuration examples of light-emitting devices.
  • 30A and 30B are diagrams showing configuration examples of light receiving devices.
  • 30C to 30E are diagrams showing configuration examples of display devices.
  • 31A to 31D are diagrams illustrating examples of electronic devices.
  • 32A to 32F are diagrams illustrating examples of electronic devices.
  • 33A to 33G are diagrams illustrating examples of electronic devices.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • an SBS side-by-side structure
  • the material and configuration can be optimized for each light-emitting device, so the degree of freedom in selecting the material and configuration increases, and it becomes easy to improve luminance and reliability.
  • holes or electrons are sometimes referred to as "carriers".
  • the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
  • the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
  • the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
  • the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
  • one layer may serve as two or three functions of the carrier injection layer, the carrier transport layer, and the carrier block layer.
  • a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • the layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier-injection layer (a hole-injection layer and an electron-injection layer), a carrier-transport layer (a hole-transport layer and an electron-transport layer), and a carrier layer.
  • block layers (hole block layer and electron block layer);
  • a light-receiving device (also referred to as a light-receiving element) has an active layer that functions at least as a photoelectric conversion layer between a pair of electrodes.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface or the formation surface. For example, it is preferable to have a region where the angle between the inclined side surface and the substrate surface or the formation surface (also referred to as a taper angle) is less than 90 degrees.
  • the side surfaces of the structure, the substrate surface, and the formation surface are not necessarily completely flat, and may be substantially planar with a minute curvature or substantially planar with minute unevenness.
  • a mask layer (also referred to as a sacrificial layer) is positioned above at least the light-emitting layer (more specifically, among the layers constituting the EL layer, the layer processed into an island shape), It has a function of protecting the light-emitting layer during the manufacturing process.
  • discontinuity refers to a phenomenon in which a layer, film, or electrode is divided due to the shape of the formation surface (for example, steps).
  • the top surface shape roughly matches means that at least a part of the outline overlaps between the laminated layers.
  • the upper layer and the lower layer may be processed with the same mask pattern, or partially with the same mask pattern. Strictly speaking, however, the contours do not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer.
  • FIG. 1A A top view (also called a plan view) of transistor 100 is shown in FIG. 1A.
  • FIG. 1B shows a cross-sectional view taken along the dashed line A1-A2 shown in FIG. 1A
  • FIG. 1C shows a cross-sectional view taken along the dashed-dotted line B1-B2.
  • a perspective view of transistor 100 is shown in FIG. Note that some of the components of the transistor 100 (such as a gate insulating layer) are omitted in FIG. 1A.
  • the top view of the transistor some of the constituent elements are omitted in the subsequent drawings, as in FIG. 1A.
  • the insulating layer is transparent and the outline is indicated by a dashed line.
  • the transistor 100 is provided over the substrate 102 .
  • the transistor 100 includes a conductive layer 104 , an insulating layer 106 , a semiconductor layer 108 , a conductive layer 112 a, a conductive layer 112 b, and an insulating layer 110 .
  • the conductive layer 104 functions as a gate electrode.
  • a portion of the insulating layer 106 functions as a gate insulating layer.
  • the conductive layer 112a functions as one of a source electrode and a drain electrode, and the conductive layer 112b functions as the other.
  • the entire region of the semiconductor layer 108 which overlaps with the gate electrode with the gate insulating layer interposed therebetween, functions as a channel formation region between the source electrode and the drain electrode.
  • a region in contact with the source electrode functions as a source region
  • a region in contact with the drain electrode functions as a drain region.
  • a conductive layer 112a is provided over the substrate 102, and an insulating layer 110 is provided over the conductive layer 112a.
  • the insulating layer 110 has an opening 141 in a region overlapping with the conductive layer 112a. In opening 141, conductive layer 112a is exposed.
  • a semiconductor layer 108 is provided to cover the opening 141 . In the opening 141, the semiconductor layer 108 has a region in contact with the conductive layer 112a.
  • the insulating layer 110 has a region sandwiched between the conductive layer 112 a and the semiconductor layer 108 .
  • a conductive layer 112 b is provided over the semiconductor layer 108 .
  • the conductive layer 112b has an opening 143 in a region overlapping with the conductive layer 112a.
  • the opening 143 is provided in a region overlapping with the opening 141 .
  • the conductive layer 112b has a region overlapping with the conductive layer 112a with the insulating layer 110 and the semiconductor layer
  • the semiconductor layer 108 has regions in contact with the bottom surface of the conductive layer 112b, the top surface and side surfaces of the insulating layer 110, and the top surface of the conductive layer 112a. That is, the bottom surface of the semiconductor layer 108 is in contact with one of the source and drain electrodes, and the top surface is in contact with the other of the source and drain electrodes.
  • the semiconductor layer 108 has a shape that conforms to the top and side surfaces of the insulating layer 110 and the top surface of the conductive layer 112a.
  • the surface on the layer formation surface side is referred to as the lower surface, and the surface opposite to the lower surface is referred to as the upper surface.
  • the surface on which the semiconductor layer 108 is formed, which faces the insulating layer 110 and the conductive layer 112a, is referred to as the lower surface of the semiconductor layer 108, and the surface opposite to the lower surface is referred to as the upper surface.
  • FIG. 3A is a perspective view showing an extract of the conductive layer 112a and the semiconductor layer 108.
  • the semiconductor layer 108 is provided to cover the opening 141 provided in the insulating layer 110 (not shown in FIG. 3A). In the opening 141, the semiconductor layer 108 has a region in contact with the upper surface of the conductive layer 112a.
  • the semiconductor layer 108 has a single-layer structure in FIG. 1B and the like, one embodiment of the present invention is not limited to this.
  • the semiconductor layer 108 may have a laminated structure of two or more layers.
  • FIG. 3B is a perspective view selectively showing the conductive layer 112a and the conductive layer 112b. Note that openings 141 provided in insulating layer 110 (not shown in FIG. 3B) are indicated by dashed lines.
  • the conductive layer 112b has an opening 143 in a region overlapping with the conductive layer 112a.
  • the top surface shape of the opening 141 and the opening 143 can be circular or elliptical, for example.
  • the upper surface shapes of the openings 141 and 143 may be triangles, quadrangles (including rectangles, rhombuses, and squares), polygons such as pentagons, or these polygons with rounded corners. As shown in FIG. 1A and the like, it is preferable that the upper surface shape of each of the openings 141 and 143 is circular.
  • the processing accuracy when forming the openings 141 and 143 can be improved, and the openings 141 and 143 can be formed in fine sizes.
  • the circle is not limited to a perfect circle.
  • the conductive layer 112b is not provided inside the opening 141, as shown in FIG. 1B and the like. Specifically, the conductive layer 112b preferably does not have a region in contact with the side surface of the insulating layer 110 on the opening 141 side.
  • FIG. 1B and the like show a configuration in which the end of the conductive layer 112b on the side of the opening 143 matches or substantially matches the end of the insulating layer 110 on the side of the opening 141.
  • the end portion of the conductive layer 112b on the opening 143 side refers to the bottom end portion of the conductive layer 112b on the opening 143 side.
  • the lower surface of the conductive layer 112b refers to the surface on the insulating layer 110 side.
  • the end of the insulating layer 110 on the side of the opening 141 refers to the end of the upper surface of the insulating layer 110 on the side of the opening 141 .
  • the upper surface of the insulating layer 110 refers to the surface on the conductive layer 112b side.
  • the upper surface shape of the opening 143 refers to the shape of the lower surface end portion of the conductive layer 112b on the opening 143 side.
  • the shape of the upper surface of the opening 141 refers to the shape of the edge of the upper surface of the insulating layer 110 on the side of the opening 141 .
  • the ends are aligned or approximately aligned to match or substantially match the ends.
  • the ends are aligned or substantially aligned, and when the top surface shapes are matched or substantially matched, at least a part of the outline overlaps between the laminated layers when viewed from the top.
  • the upper layer and the lower layer may be processed with the same mask pattern, or partially with the same mask pattern. Strictly speaking, however, the contours do not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer, and in this case also the edges are roughly aligned, or the top surface shape is It is said that they roughly match.
  • An insulating layer 106 functioning as a gate insulating layer is provided to cover the openings 141 and 143 .
  • the insulating layer 106 is provided over the semiconductor layer 108 , the conductive layer 112 b , and the insulating layer 110 .
  • the insulating layer 106 has regions in contact with the top surface and side surfaces of the semiconductor layer 108 , the top surface and side surfaces of the conductive layer 112 b , and the top surface of the insulating layer 110 .
  • the insulating layer 106 has a shape that conforms to the top and side surfaces of the semiconductor layer 108 , the top and side surfaces of the conductive layer 112 b , and the top surface of the insulating layer 110 .
  • the conductive layer 104 functioning as a gate electrode is provided over the insulating layer 106 and has a region in contact with the top surface of the insulating layer 106 .
  • the conductive layer 104 has a region overlapping with the semiconductor layer 108 with the insulating layer 106 interposed therebetween.
  • the conductive layer 104 has a shape that follows the top surface of the insulating layer 106 .
  • FIG. 3C is a perspective view selectively showing the conductive layer 112a and the conductive layer 104.
  • the conductive layer 104 is provided to cover the openings 141 and 143 .
  • the conductive layer 104 has a region overlapping the semiconductor layer 108 with the insulating layer 106 interposed therebetween.
  • the conductive layer 104 has a region overlapping with the conductive layer 112a with the insulating layer 106 and the semiconductor layer 108 interposed therebetween, and has a region overlapping with the conductive layer 112b with the insulating layer 106 interposed therebetween.
  • the conductive layer 104 preferably covers the end of the conductive layer 112b on the opening 143 side.
  • the transistor 100 is a so-called top-gate transistor that has a gate electrode above the semiconductor layer 108 .
  • the conductive layer 112a, the conductive layer 112b, and the conductive layer 104 can each function as wiring. Further, the transistor 100 can be provided in a region where these wirings overlap. That is, in a circuit including the transistor 100 and the wiring, the area occupied by the transistor 100 and the wiring can be reduced. Furthermore, it is possible to reduce the area occupied by the circuit. Therefore, the semiconductor device can be small. For example, when the semiconductor device of one embodiment of the present invention is applied to a pixel circuit of a display device, the area occupied by the pixel circuit can be reduced, and the display device can have high definition. Further, when applied to a driver circuit (for example, a gate line driver circuit and a source line driver circuit) of a display device, the area occupied by the driver circuit can be reduced, and a display device with a narrow frame can be obtained.
  • a driver circuit for example, a gate line driver circuit and a source line driver circuit
  • FIGS. 4A and 4B are described with reference to FIGS. 4A and 4B.
  • 4A is a top view of transistor 100.
  • FIG. FIG. 4B is an enlarged view of FIG. 1B.
  • a region in contact with the conductive layer 112a functions as one of a source region and a drain region
  • a region in contact with the conductive layer 112b functions as the other of the source region and the drain region
  • a region between the source region and the drain region functions as a channel forming region.
  • the channel length of the transistor 100 is the distance between the source region and the drain region.
  • FIG. 4B shows the channel length L100 of the transistor 100 with a dashed double-headed arrow.
  • the channel length L100 is the distance between the end of the region where the semiconductor layer 108 and the conductive layer 112a are in contact and the end of the region where the semiconductor layer 108 and the conductive layer 112b are in contact in a cross-sectional view.
  • the channel length L100 of the transistor 100 corresponds to the sum of the length of the side surface of the insulating layer 110 on the opening 141 side and the film thickness of the semiconductor layer 108 in a cross-sectional view. That is, the channel length L100 is determined by the film thickness T110 of the insulating layer 110, the angle ⁇ 110 between the side surface of the insulating layer 110 on the opening 141 side and the formation surface of the insulating layer 110 (here, the upper surface of the conductive layer 112a), and the semiconductor It is determined by the thickness of the layer 108 and is not affected by the performance of the exposure equipment used to fabricate the transistor.
  • the channel length L100 can be set to a value smaller than the limit resolution of the exposure apparatus, and a fine-sized transistor can be realized.
  • the channel length L100 is preferably 0.01 ⁇ m or more and less than 3 ⁇ m, more preferably 0.05 ⁇ m or more and less than 3 ⁇ m, further preferably 0.1 ⁇ m or more and less than 3 ⁇ m, further preferably 0.15 ⁇ m or more and less than 3 ⁇ m.
  • the film thickness T110 of the insulating layer 110 is indicated by a double-headed arrow, and the film thickness T108 of the semiconductor layer 108 is indicated by a solid arrow.
  • the ON current of the transistor 100 can be increased by reducing the channel length L100.
  • a circuit that can operate at high speed can be manufactured.
  • the semiconductor device of one embodiment of the present invention is applied to a large-sized display device or a high-definition display device, signal delay in each wiring can be reduced even when the number of wirings is increased. Unevenness can be suppressed. Therefore, the display device can have high display quality.
  • the display device since the area occupied by the circuit can be reduced, the display device can have a narrow frame.
  • the channel length L100 can be controlled.
  • the film thickness T110 of the insulating layer 110 is preferably 0.01 ⁇ m or more and less than 3 ⁇ m, more preferably 0.05 ⁇ m or more and less than 3 ⁇ m, further preferably 0.1 ⁇ m or more and less than 3 ⁇ m, further preferably 0.15 ⁇ m or more and less than 3 ⁇ m.
  • 0.2 ⁇ m or more and less than 3 ⁇ m more preferably 0.2 ⁇ m or more and less than 2.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 2 ⁇ m, further preferably 0.2 ⁇ m or more and less than 1.5 ⁇ m, and further is preferably 0.3 ⁇ m or more and 1.5 ⁇ m or less, more preferably 0.3 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1 ⁇ m or less, and further is preferably 0.5 ⁇ m or more and 1 ⁇ m or less.
  • the side surface of the insulating layer 110 on the side of the opening 141 is preferably tapered.
  • Angle ⁇ 110 of insulating layer 110 is preferably less than 90 degrees. By reducing the angle ⁇ 110, the coverage of a layer (for example, the semiconductor layer 108) provided on the insulating layer 110 can be improved. However, if the angle ⁇ 110 is made smaller, the contact area between the semiconductor layer 108 and the conductive layer 112a becomes smaller, which may increase the contact resistance between the semiconductor layer 108 and the conductive layer 112a.
  • the angle ⁇ 110 is preferably 45 degrees or more and less than 90 degrees, more preferably 50 degrees or more and less than 90 degrees, further preferably 55 degrees or more and less than 90 degrees, further preferably 60 degrees or more and less than 90 degrees, further preferably 60 degrees or more. It is preferably 85 degrees or less, more preferably 65 degrees or more and 85 degrees or less, further preferably 65 degrees or more and 80 degrees or less, further preferably 70 degrees or more and 80 degrees or less.
  • FIG. 4B and the like show a structure in which the side surface of the insulating layer 110 on the opening 141 side has a linear shape in a cross-sectional view; however, one embodiment of the present invention is not limited thereto.
  • the shape of the side surface of the insulating layer 110 on the opening 141 side may be curved, or may have both a linear region and a curved region.
  • the thickness of the semiconductor layer 108 is preferably 3 nm or more and 100 nm or less, more preferably 5 nm or more and 100 nm or less, further preferably 10 nm or more and 100 nm or less, further preferably 10 nm or more and 70 nm or less, further preferably 15 nm or more and 70 nm or less. Further, it is preferably 15 nm or more and 50 nm or less, further preferably 20 nm or more and 50 nm or less, further preferably 20 nm or more and 40 nm or less, further preferably 25 nm or more and 40 nm or less.
  • the channel width of the transistor 100 is the width of the source region or the width of the drain region in the direction orthogonal to the channel length direction. That is, the channel width is the width of the region where the semiconductor layer 108 and the conductive layer 112a are in contact or the width of the region where the semiconductor layer 108 and the conductive layer 112b are in contact in the direction orthogonal to the channel length direction.
  • the channel width of the transistor 100 is described as the width of a region where the semiconductor layer 108 and the conductive layer 112b are in contact with each other in a direction orthogonal to the channel length direction.
  • 4A and 4B show the channel width W100 of the transistor 100 with a solid double-headed arrow.
  • the channel width W100 is the length of the lower surface end portion of the conductive layer 112b on the opening 143 side in a top view (also referred to as a plan view).
  • the channel width W100 is determined by the top surface shape of the opening 143.
  • 4A and 4B show the width D143 of the opening 143 with a two-dot chain double-headed arrow.
  • the width D143 indicates the shortest rectangular short side that circumscribes the opening 143 when viewed from above.
  • the width D143 of the opening 143 is equal to or greater than the resolution limit of the exposure apparatus.
  • the width D143 is, for example, preferably 0.2 ⁇ m or more and less than 5 ⁇ m, more preferably 0.2 ⁇ m or more and less than 4.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 4 ⁇ m, further preferably 0.2 ⁇ m or more and less than 3.5 ⁇ m.
  • the width D143 corresponds to the diameter of the opening 143, and the channel width W100 can be calculated as "D143 ⁇ ".
  • a semiconductor material that can be used for the semiconductor layer 108 is not particularly limited.
  • a single semiconductor or a compound semiconductor can be used.
  • Silicon or germanium for example, can be used as a single semiconductor.
  • compound semiconductors include gallium arsenide and silicon germanium.
  • an organic substance having semiconductor characteristics or a metal oxide having semiconductor characteristics also referred to as an oxide semiconductor
  • These semiconductor materials may contain impurities as dopants.
  • the crystallinity of the semiconductor material used for the semiconductor layer 108 is not particularly limited. ) may be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.
  • Silicon can be used for the semiconductor layer 108 .
  • Examples of silicon include monocrystalline silicon, polycrystalline silicon, microcrystalline silicon, amorphous silicon, and the like.
  • Examples of polycrystalline silicon include low temperature poly silicon (LTPS).
  • a transistor using amorphous silicon for the semiconductor layer 108 can be formed on a large glass substrate and manufactured at low cost.
  • a transistor using polycrystalline silicon for the semiconductor layer 108 has high field-effect mobility and can operate at high speed.
  • a transistor using microcrystalline silicon for the semiconductor layer 108 has higher field-effect mobility than a transistor using amorphous silicon and can operate at high speed.
  • the semiconductor layer 108 preferably has a metal oxide (oxide semiconductor) exhibiting semiconductor properties.
  • Metal oxides that can be used for the semiconductor layer 108 include, for example, indium oxide, gallium oxide, and zinc oxide.
  • the metal oxide preferably contains at least indium (In) or zinc (Zn).
  • the metal oxide preferably contains two or three elements selected from indium, the element M, and zinc.
  • Element M includes gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium.
  • the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • the semiconductor layer 108 is made of, for example, indium oxide, indium zinc oxide (In--Zn oxide), indium tin oxide (In--Sn oxide), indium titanium oxide (In--Ti oxide), indium aluminum zinc oxide.
  • In-Al-Zn oxide also referred to as IAZO
  • indium tin zinc oxide In-Sn-Zn oxide
  • indium titanium zinc oxide In-Ti-Zn oxide
  • indium gallium zinc oxide In-Ga-Zn oxide, also referred to as IGZO
  • indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), indium gallium aluminum zinc oxide (In-Ga-Al-Zn oxide, IGAZO or IAGZO can be used.
  • indium tin oxide containing silicon, or the like can be used.
  • the element M is preferably one or more selected from gallium, aluminum, yttrium, and tin.
  • the element M is preferably gallium.
  • composition of the metal oxide included in the semiconductor layer 108 greatly affects the electrical characteristics and reliability of the transistor 100 .
  • the semiconductor layer 108 When an In-Zn oxide is used for the semiconductor layer 108, it is preferable to use a metal oxide in which the atomic ratio of indium is equal to or greater than the atomic ratio of zinc.
  • the semiconductor layer 108 When an In—Sn oxide is used for the semiconductor layer 108, it is preferable to use a metal oxide in which the atomic ratio of indium is equal to or higher than the atomic ratio of tin.
  • a metal oxide in which the atomic ratio of indium is higher than that of tin can be applied. Furthermore, it is preferable to use a metal oxide in which the atomic ratio of zinc is higher than that of tin.
  • a metal oxide in which the atomic ratio of indium is higher than that of aluminum can be applied. Furthermore, it is preferable to use a metal oxide in which the atomic ratio of zinc is higher than that of aluminum.
  • the semiconductor layer 108 When an In--Ga--Zn oxide is used for the semiconductor layer 108, a metal oxide in which the atomic ratio of indium to the atomic number of metal elements is higher than that of gallium can be applied. Furthermore, it is more preferable to use a metal oxide in which the atomic ratio of zinc is higher than that of gallium.
  • an In-M-Zn oxide is used for the semiconductor layer 108
  • a metal oxide in which the atomic ratio of indium to the atomic number of the metal element is higher than that of the element M can be applied.
  • a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of the element M is more preferable to use.
  • the sum of the atomic ratios of the metal elements can be used as the atomic ratio of the element M.
  • the atomic ratio of the element M can be the sum of the atomic ratio of gallium and the atomic ratio of aluminum.
  • the atomic ratio of indium, the element M, and zinc is preferably within the above range.
  • the ratio of the number of indium atoms to the number of atoms of the metal element contained in the metal oxide is 30 atomic % or more and 100 atomic % or less, preferably 30 atomic % or more and 95 atomic % or less, more preferably 35 atomic % or more and 95 atoms.
  • the ratio of the number of indium atoms to the total number of atoms of indium, the element M, and zinc is preferably within the above range.
  • the ratio of the number of indium atoms to the number of atoms of the contained metal element is sometimes referred to as the indium content.
  • a transistor with a large on-current By increasing the indium content of the metal oxide, a transistor with a large on-current can be obtained. By applying the transistor to a transistor that requires a large on-state current, a semiconductor device with excellent electrical characteristics can be obtained.
  • Analysis of the composition of metal oxides can be performed, for example, by energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy), X-ray photoelectron spectroscopy (XPS: X-ray Photoelectron Spectroscopy), inductively coupled plasma mass spectroscopy.
  • EDX Energy Dispersive X-ray spectroscopy
  • XPS X-ray Photoelectron Spectroscopy
  • ICP-MS Inductively Coupled Plasma-Mass Spectrometry
  • ICP-AES Inductively Coupled Plasma-Atomic Emission Spectrometry
  • a plurality of these techniques may be combined for analysis.
  • the actual content rate and the content rate obtained by analysis may differ due to the influence of analysis accuracy. For example, when the content of element M is low, the content of element M obtained by analysis may be lower than the actual content.
  • the composition in the vicinity includes the range of ⁇ 30% of the desired atomic number ratio.
  • the atomic ratio of indium is 1, the atomic ratio of M is greater than 0.1. 2 or less, including the case where the atomic ratio of zinc is greater than 0.1 and 2 or less.
  • a sputtering method or an atomic layer deposition (ALD) method can be preferably used to form the metal oxide.
  • the atomic ratio of the target may differ from the atomic ratio of the metal oxide.
  • zinc may have a lower atomic ratio in the metal oxide than in the target.
  • the atomic ratio of zinc contained in the target may be about 40% or more and 90% or less.
  • GBT Gate Bias Temperature
  • PBTS Positive Bias Temperature Stress
  • NBTS Negative Bias Temperature Stress
  • the PBTS test and the NBTS test which are performed under light irradiation, are called PBTIS (Positive Bias Temperature Illumination Stress) test and NBTIS (Negative Bias Temperature Illumination Stress) test, respectively.
  • n-type transistor In an n-type transistor, a positive potential is applied to the gate when the transistor is turned on (a state in which current flows), so the amount of change in the threshold voltage in the PBTS test is an index of the reliability of the transistor. It is one of the important items to pay attention to.
  • the transistor can be highly reliable with respect to the application of a positive bias. In other words, the transistor can have a small amount of change in threshold voltage in the PBTS test. Further, when a metal oxide containing gallium is used, the content of gallium is preferably lower than the content of indium. Accordingly, a highly reliable transistor can be realized.
  • One of the causes of threshold voltage fluctuation in PBTS tests is the defect level at or near the interface between the semiconductor layer and the gate insulating layer.
  • the semiconductor layer 108 when an In--Ga--Zn oxide is used for the semiconductor layer 108, a metal oxide in which the atomic ratio of indium is higher than that of gallium can be used for the semiconductor layer 108. can. Moreover, it is more preferable to use a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of gallium. In other words, it is preferable that the semiconductor layer 108 be made of a metal oxide that satisfies the atomic ratios of In>Ga and Zn>Ga.
  • the ratio of the number of gallium atoms to the number of contained metal element atoms is higher than 0 atomic % and 50 atomic % or less, preferably 0.1 atomic % or more and 40 atomic % or less, more preferably 0.1 atomic % or more and 40 atomic % or less.
  • a metal oxide that does not contain gallium may be applied to the semiconductor layer 108 .
  • In—Zn oxide can be applied to the semiconductor layer 108 .
  • the field-effect mobility of the transistor can be increased by increasing the atomic ratio of indium to the atomic number of the metal element contained in the metal oxide.
  • the metal oxide becomes a highly crystalline metal oxide, which suppresses fluctuations in the electrical characteristics of the transistor and improves reliability. be able to.
  • a metal oxide that does not contain gallium and zinc, such as indium oxide may be used for the semiconductor layer 108 .
  • an oxide containing indium and zinc can be used for the semiconductor layer 108 .
  • Gallium has been described as a representative example, but it can also be applied to the case where the element M is used instead of gallium.
  • a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of the element M is preferably used for the semiconductor layer 108 .
  • the transistor can be highly reliable with respect to positive bias application.
  • the semiconductor device can have high reliability.
  • the electrical characteristics of the transistor may change.
  • a transistor applied to a region where light can enter have small variation in electrical characteristics under light irradiation and have high reliability against light. Reliability against light can be evaluated, for example, by the amount of change in threshold voltage in an NBTIS test.
  • the transistor By increasing the content of the element M in the metal oxide, a transistor with high reliability against light can be obtained. That is, the transistor can have a small amount of change in threshold voltage in the NBTIS test. Specifically, a metal oxide in which the atomic ratio of the element M is equal to or higher than the atomic ratio of indium has a larger bandgap, and the variation of the threshold voltage in the NBTIS test of the transistor can be reduced. .
  • the band gap of the metal oxide included in the semiconductor layer 108 is preferably 2.0 eV or more, more preferably 2.5 eV or more, further preferably 3.0 eV or more, further preferably 3.2 eV or more, further preferably 3.2 eV or more. 0.3 eV or more is preferable, 3.4 eV or more is preferable, and 3.5 eV or more is more preferable.
  • the ratio of the number of atoms of the element M to the number of atoms of the contained metal element is 20 atomic % or more and 70 atomic % or less, preferably 30 atomic % or more and 70 atomic % or less, more preferably 30 atoms. % or more and 60 atomic % or less, more preferably 40 atomic % or more and 60 atomic % or less, more preferably 50 atomic % or more and 60 atomic % or less, can be suitably used.
  • a metal oxide in which the atomic ratio of indium to the atomic number of metal elements is equal to or lower than that of gallium can be applied.
  • the ratio of the number of gallium atoms to the number of atoms of the contained metal element is 20 atomic % or more and 60 atomic % or less, preferably 20 atomic % or more and 50 atomic % or less, more preferably 30 atoms. % or more and 50 atomic % or less, more preferably 40 atomic % or more and 60 atomic % or less, more preferably 50 atomic % or more and 60 atomic % or less, can be suitably used.
  • the semiconductor device By using a metal oxide with a high content of the element M for the semiconductor layer 108, a transistor with high reliability against light can be obtained. By applying the transistor to a transistor that requires high reliability against light, the semiconductor device can have high reliability.
  • the electrical characteristics and reliability of the transistor differ depending on the composition of the metal oxide applied to the semiconductor layer 108. Therefore, by changing the composition of the metal oxide according to the electrical characteristics and reliability required for the transistor, a semiconductor device having both excellent electrical characteristics and high reliability can be obtained.
  • the semiconductor layer 108 may have a laminated structure having two or more metal oxide layers. Two or more metal oxide layers included in the semiconductor layer 108 may have the same or substantially the same composition. By using a stacked structure of metal oxide layers having the same composition, for example, the same sputtering target can be used for formation, so that the manufacturing cost can be reduced.
  • the two or more metal oxide layers included in the semiconductor layer 108 may have different compositions.
  • the element M it is particularly preferable to use gallium or aluminum.
  • a crystalline metal oxide layer is preferably used for the semiconductor layer 108 .
  • a metal oxide layer having a CAAC (c-axis aligned crystal) structure, a polycrystalline structure, a nano-crystal (nc) structure, or the like, which will be described later, can be used.
  • CAAC c-axis aligned crystal
  • nc nano-crystal
  • the higher the substrate temperature during formation the higher the crystallinity of the metal oxide layer.
  • the substrate temperature during formation can be adjusted, for example, by the temperature of the stage on which the substrate is placed.
  • a metal oxide layer with higher crystallinity is formed as the flow rate of the oxygen gas to the total deposition gas used at the time of formation (hereinafter also referred to as the oxygen flow rate ratio) or the oxygen partial pressure in the treatment chamber of the deposition apparatus is higher. can be formed.
  • the semiconductor layer 108 may have a laminated structure of two or more metal oxide layers with different crystallinities.
  • a stacked structure of a first metal oxide layer and a second metal oxide layer provided on the first metal oxide layer is used, and the second metal oxide layer is composed of the first metal oxide layer.
  • a structure having a region with higher crystallinity than that of the oxide layer can be employed.
  • the second metal oxide layer can have a region with lower crystallinity than the first metal oxide layer.
  • Two or more metal oxide layers included in the semiconductor layer 108 may have the same or substantially the same composition. By using a stacked structure of metal oxide layers having the same composition, for example, the same sputtering target can be used for formation, so that the manufacturing cost can be reduced.
  • a laminated structure of two or more metal oxide layers with different crystallinities can be formed.
  • two or more metal oxide layers included in the semiconductor layer 108 may have different compositions.
  • the substrate temperature during the formation of the semiconductor layer 108 is preferably room temperature (25° C.) or higher and 200° C. or lower, more preferably room temperature or higher and 130° C. or lower. By setting the substrate temperature within the above range, bending or distortion of the substrate can be suppressed when a large glass substrate is used.
  • V 2 O oxygen vacancies
  • part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron that is a carrier. Therefore, a transistor including an oxide semiconductor containing a large amount of hydrogen is likely to have normally-on characteristics.
  • hydrogen in an oxide semiconductor easily moves due to stress such as heat and an electric field; therefore, when a large amount of hydrogen is contained in the oxide semiconductor, the reliability of the transistor might be deteriorated.
  • VOH can function as a donor of an oxide semiconductor.
  • the oxide semiconductor is evaluated based on the carrier concentration instead of the donor concentration. Therefore, in this specification and the like, instead of the donor concentration, the carrier concentration assuming a state in which no electric field is applied is used as a parameter of the oxide semiconductor in some cases.
  • the “carrier concentration” described in this specification and the like may be rephrased as “donor concentration”.
  • V OH in the semiconductor layer 108 is preferably reduced as much as possible to make the semiconductor layer 108 highly pure intrinsic or substantially highly pure intrinsic.
  • impurities such as water and hydrogen in the oxide semiconductor are removed (sometimes referred to as dehydration or dehydrogenation treatment). Therefore, it is important to repair oxygen vacancies (V 0 ) by supplying oxygen to the oxide semiconductor.
  • oxygenation treatment By using an oxide semiconductor in which impurities such as V OH are sufficiently reduced for a channel formation region of a transistor, stable electrical characteristics can be imparted. Note that repairing oxygen vacancies ( V.sub.2O.sub.3 ) by supplying oxygen to an oxide semiconductor is sometimes referred to as oxygenation treatment.
  • the carrier concentration of the oxide semiconductor in the region functioning as a channel formation region is preferably 1 ⁇ 10 18 cm ⁇ 3 or less and less than 1 ⁇ 10 17 cm ⁇ 3 . more preferably less than 1 ⁇ 10 16 cm ⁇ 3 , still more preferably less than 1 ⁇ 10 13 cm ⁇ 3 , even more preferably less than 1 ⁇ 10 12 cm ⁇ 3 . Note that there is no particular limitation on the lower limit of the carrier concentration of the oxide semiconductor in the region that functions as a channel formation region;
  • a transistor using an oxide semiconductor (hereinafter referred to as an OS transistor) has extremely high field-effect mobility compared to a transistor using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (also referred to as an off-state current) in an off state, and can hold charge accumulated in a capacitor connected in series with the transistor for a long time. is. Further, by using the OS transistor, power consumption of the semiconductor device can be reduced.
  • a semiconductor device which is one embodiment of the present invention can be applied to a display device, for example.
  • a display device for example.
  • the OS transistor has a higher breakdown voltage between the source and the drain than a transistor using silicon (hereinafter referred to as a Si transistor)
  • a high voltage can be applied between the source and the drain of the OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light emitting device can be increased, and the light emission luminance of the light emitting device can be increased.
  • the OS transistor When the transistor operates in the saturation region, the OS transistor can reduce the change in the source-drain current with respect to the change in the gate-source voltage compared to the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor In the saturation characteristics of the current that flows when the transistor operates in the saturation region, the OS transistor can flow a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. can. Therefore, by using the OS transistor as the driving transistor, stable current can be supplied to the light-emitting device even when the current-voltage characteristics of the light-emitting device vary. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • the OS transistor has little change in electrical characteristics due to radiation exposure, that is, it is highly resistant to radiation, so it can be suitably used in an environment where radiation may be incident. It can be said that the OS transistor has high reliability against radiation.
  • an OS transistor can be preferably used in a pixel circuit of an X-ray flat panel detector.
  • the OS transistor can be suitably used for a semiconductor device used in outer space. Radiation includes electromagnetic radiation (eg, X-rays and gamma rays) and particle radiation (eg, alpha rays, beta rays, proton rays, and neutron rays).
  • the insulating layer 110 An inorganic material or an organic material can be used for the insulating layer 110 .
  • the insulating layer 110 may have a layered structure of a layer containing an inorganic material and a layer containing an organic material.
  • An inorganic material can be suitably used for the insulating layer 110 .
  • inorganic materials one or more of oxides, oxynitrides, nitride oxides, and nitrides can be used.
  • the insulating layer 110 is made of, for example, silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, silicon nitride, or silicon nitride oxide. , and aluminum nitride can be used.
  • oxynitride refers to a material that contains more oxygen than nitrogen in its composition.
  • Nitrided oxide refers to a material whose composition contains more nitrogen than oxygen.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon oxynitride refers to a material whose composition contains more nitrogen than oxygen.
  • SIMS secondary ion mass spectrometry
  • XPS X-ray photoelectron spectroscopy
  • SIMS is suitable when the content of the target element is high (for example, 0.5 atomic % or more, or 1 atomic % or more).
  • SIMS is suitable when the target element content is low (for example, less than 0.5 atomic % or less than 1 atomic %).
  • the insulating layer 110 may have a laminated structure of two or more layers.
  • FIG. 1B and the like show a configuration in which the insulating layer 110 has a laminated structure of an insulating layer 110a and an insulating layer 110b on the insulating layer 110a.
  • the insulating layer 110a and the insulating layer 110b can each use the material that can be used for the insulating layer 110 described above. Note that the same material or different materials may be used for the insulating layers 110a and 110b.
  • the insulating layer 110a may have a laminated structure of two or more layers.
  • the insulating layer 110b may have a laminated structure of two or more layers.
  • the film thickness of the insulating layer 110a can be made thicker than the film thickness of the insulating layer 110b. It is preferable that the film formation rate of the insulating layer 110a is high. In particular, when the insulating layer 110a is thick, it is preferable that the insulating layer 110a is formed at a high deposition rate. Productivity can be improved by increasing the deposition rate of the insulating layer 110a. For example, the deposition rate can be increased by increasing the power for forming the insulating layer 110a.
  • the insulating layer 110a has a small stress.
  • the stress of the insulating layer 110a increases, which may cause warping of the substrate.
  • By reducing the stress of the insulating layer 110a it is possible to suppress the occurrence of problems during the process due to the stress such as warpage of the substrate.
  • the insulating layer 110b functions as a blocking film that suppresses desorption of gas from the insulating layer 110a.
  • the insulating layer 110b it is preferable to use a material that makes it difficult for gas to diffuse.
  • the insulating layer 110b preferably has a region with a higher film density than the insulating layer 110a.
  • the blocking property can be improved by increasing the film density of the insulating layer 110b.
  • a material containing more nitrogen than the insulating layer 110a can be used. By increasing the nitrogen content of the insulating layer 110b, the blocking property can be improved.
  • the insulating layer 110b may have a thickness that functions as a blocking film that suppresses desorption of gas from the insulating layer 110a, and may be thinner than the insulating layer 110a.
  • the deposition rate of the insulating layer 110b is preferably slower than the deposition rate of the insulating layer 110a. By slowing down the deposition rate of the insulating layer 110b, the film density of the insulating layer 110b can be increased, and the blocking property can be improved. Similarly, by increasing the substrate temperature during the deposition of the insulating layer 110b, the film density of the insulating layer 110b is increased and the blocking property can be improved.
  • the film densities are different. may be observable.
  • the higher the film density the darker (dark) the transmission electron (TE) image, and the lower the film density, the lighter (brighter) the transmission electron (TE) image. Therefore, in a transmission electron (TE) image, the insulating layer 110b may appear darker (darker) than the insulating layer 110a.
  • the insulating layer 110b may have a region where the hydrogen concentration in the film is lower than that of the insulating layer 110a.
  • the difference in hydrogen concentration between the insulating layers 110a and 110b can be evaluated by secondary ion mass spectrometry (SIMS), for example.
  • SIMS secondary ion mass spectrometry
  • the insulating layer 110 will be specifically described by taking a configuration using a metal oxide for the semiconductor layer 108 as an example.
  • an inorganic material can be preferably used for each of the insulating layers 110a and 110b.
  • An oxide or an oxynitride is preferably used for the insulating layer 110a.
  • a film that releases oxygen by heating is preferably used for the insulating layer 110a.
  • Silicon oxide or silicon oxynitride, for example, can be suitably used for the insulating layer 110a.
  • Oxygen can be supplied from the insulating layer 110a to the semiconductor layer 108 by releasing oxygen from the insulating layer 110a.
  • oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced, and favorable electrical characteristics can be obtained.
  • the transistor can have high reliability.
  • the insulating layer 110a preferably has a high oxygen diffusion coefficient. By increasing the diffusion coefficient of oxygen in the insulating layer 110a, oxygen can easily diffuse in the insulating layer 110a, and oxygen can be efficiently supplied from the insulating layer 110a to the semiconductor layer .
  • the treatment for supplying oxygen to the semiconductor layer 108 also includes heat treatment in an atmosphere containing oxygen, plasma treatment in an atmosphere containing oxygen, or the like.
  • the insulating layer 110a release less impurities (for example, water and hydrogen) from itself. By reducing the release of impurities from the insulating layer 110a, the diffusion of impurities into the semiconductor layer 108 is suppressed, and the transistor can have favorable electrical characteristics and high reliability.
  • impurities for example, water and hydrogen
  • the insulating layer 110a for example, silicon oxide or silicon oxynitride using a plasma enhanced CVD (PECVD) method can be preferably used.
  • PECVD plasma enhanced CVD
  • a mixed gas of a gas containing silicon and a gas containing oxygen is preferably used as the raw material gas.
  • the gas containing silicon for example, one or more of silane, disilane, trisilane, and fluorinated silane can be used.
  • the oxygen-containing gas for example, one or more of oxygen (O 2 ), ozone (O 3 ), dinitrogen monoxide (N 2 O), nitrogen monoxide (NO), or nitrogen dioxide (NO 2 ) can be used.
  • O 2 oxygen
  • O 3 oxygen
  • N 2 O ozone
  • NO nitrogen monoxide
  • NO 2 nitrogen dioxide
  • the amount of impurities (eg, water and hydrogen) released from the insulating layer 110a can be reduced by increasing the power for forming the insulating layer 110a.
  • the insulating layer 110b is preferably impermeable to oxygen.
  • the insulating layer 110b functions as a blocking film that suppresses desorption of oxygen from the insulating layer 110a. Furthermore, it is preferable that the insulating layer 110b is difficult to permeate hydrogen.
  • the insulating layer 110b functions as a blocking film that prevents hydrogen from diffusing from outside the transistor through the insulating layer 110 to the semiconductor layer . It is preferable that the film density of the insulating layer 110b is high. By increasing the film density of the insulating layer 110b, the property of blocking oxygen and hydrogen can be improved.
  • the film density of the insulating layer 110b is preferably higher than the film density of the insulating layer 110a.
  • the insulating layer 110b preferably has, for example, a region containing more nitrogen than the insulating layer 110a.
  • a material containing more nitrogen than the insulating layer 110a can be used.
  • the insulating layer 110b is preferably made of nitride or oxynitride.
  • silicon nitride or silicon oxynitride can be preferably used for the insulating layer 110b.
  • the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 decreases. It may become less.
  • the insulating layer 110b over the insulating layer 110a, diffusion of oxygen contained in the insulating layer 110a from a region of the insulating layer 110a that is not in contact with the semiconductor layer 108 can be suppressed. Therefore, the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 increases, and oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced. Therefore, the transistor can have favorable electrical characteristics and high reliability.
  • Oxygen contained in the insulating layer 110a might oxidize the conductive layer 112b and increase the resistance thereof. Further, the conductive layer 112b is oxidized by oxygen contained in the insulating layer 110a, so that the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 may decrease. By providing the insulating layer 110b over the insulating layer 110a, oxidation of the conductive layer 112b and an increase in resistance can be suppressed. At the same time, the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 increases, oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced, good electrical characteristics are exhibited, and A highly reliable transistor can be obtained.
  • the insulating layer 110b preferably has a thickness that functions as a blocking film for oxygen and hydrogen. If the film thickness of the insulating layer 110b is thin, the function as a blocking film may deteriorate. On the other hand, when the thickness of the insulating layer 110b is large, the region of the semiconductor layer 108 in contact with the insulating layer 110a is narrowed, and the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 may be reduced. The film thickness of the insulating layer 110b may be thinner than the film thickness of the insulating layer 110a.
  • the thickness of the insulating layer 110b is preferably 5 nm or more and 100 nm or less, more preferably 5 nm or more and 70 nm or less, further preferably 10 nm or more and 70 nm or less, further preferably 10 nm or more and 50 nm or less, further preferably 20 nm or more and 50 nm or less. , and more preferably 20 nm or more and 40 nm or less.
  • the insulating layer 110b release less impurities (for example, water and hydrogen) from itself. By reducing the release of impurities from the insulating layer 110b, diffusion of impurities into the semiconductor layer 108 is suppressed, and the transistor can have favorable electrical characteristics and high reliability.
  • impurities for example, water and hydrogen
  • a region of the semiconductor layer 108 in contact with the insulating layer 110 can function as a channel formation region. That is, oxygen is selectively supplied to the channel formation region, and oxygen vacancies (V 0 ) and V OH can be reduced. Therefore, the transistor can have favorable electrical characteristics and high reliability.
  • the conductive layers 112a and 112b functioning as source and drain electrodes and the conductive layer 104 functioning as a gate electrode are chromium, copper, aluminum, gold, silver, zinc, molybdenum, tantalum, titanium, tungsten, manganese, and nickel. , iron, cobalt, and niobium, or an alloy containing one or more of the aforementioned metals.
  • the conductive layer 104, the conductive layer 112a, and the conductive layer 112b can preferably be formed using a low-resistance conductive material containing one or more of copper, silver, gold, and aluminum. In particular, copper or aluminum is preferable because of its excellent mass productivity.
  • a conductive metal oxide (also referred to as an oxide conductor) can be used for the conductive layer 104, the conductive layer 112a, and the conductive layer 112b.
  • an oxide conductor for example, In--Sn oxide (ITO), In--W oxide, In--W--Zn oxide, In--Ti oxide, In--Ti--Sn oxide , In—Zn oxide, In—Sn—Si oxide (ITSO), and In—Ga—Zn oxide.
  • oxide conductor (OC)
  • OC oxide conductor
  • oxygen vacancies are formed in a metal oxide having semiconductor properties and hydrogen is added to the oxygen vacancies, a donor level is formed near the conduction band.
  • the metal oxide becomes highly conductive and becomes a conductor.
  • a metal oxide that is made a conductor can be referred to as an oxide conductor.
  • the conductive layer 104, the conductive layer 112a, and the conductive layer 112b may have a laminated structure of a conductive layer containing the aforementioned oxide conductor (metal oxide) and a conductive layer containing a metal or alloy. Wiring resistance can be reduced by using a conductive layer containing a metal or an alloy.
  • a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be applied to the conductive layer 104, the conductive layer 112a, and the conductive layer 112b.
  • X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti
  • processing can be performed by a wet etching method, so that manufacturing costs can be suppressed.
  • the conductive layer 104, the conductive layer 112a, and the conductive layer 112b may be made of the same material or may be made of different materials.
  • the conductive layer 112a and the conductive layer 112b are specifically described using a structure in which a metal oxide is used for the semiconductor layer 108 as an example.
  • the conductive layers 112a and 112b may be oxidized by oxygen contained in the semiconductor layer 108, resulting in increased resistance.
  • the conductive layers 112a and 112b may be oxidized by oxygen contained in the insulating layer 110a, resulting in increased resistance.
  • Oxygen contained in the semiconductor layer 108 oxidizes the conductive layers 112a and 112b, which might increase oxygen vacancies (V 0 ) in the semiconductor layer 108 .
  • the conductive layers 112a and 112b are oxidized by oxygen contained in the insulating layer 110a, so that the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 is reduced in some cases.
  • the conductive layers 112a and 112b are preferably made of materials that are difficult to oxidize.
  • An oxide conductor is preferably used for each of the conductive layers 112a and 112b.
  • ITO In--Sn oxide
  • ITSO In--Sn--Si oxide
  • a nitride conductor may be used for each of the conductive layers 112a and 112b.
  • Nitride conductors include tantalum nitride and titanium nitride.
  • the conductive layer 112a and the conductive layer 112b may have a layered structure of the materials described above.
  • the insulating layer 106 functioning as a gate insulating layer preferably has a low defect density. Since the insulating layer 106 has a low defect density, the transistor can have favorable electrical characteristics. Furthermore, the insulating layer 106 preferably has a high withstand voltage. Since the insulating layer 106 has high withstand voltage, the transistor can have high reliability.
  • the insulating layer 106 one or more of insulating oxides, oxynitrides, nitride oxides, and nitrides can be used, for example.
  • the insulating layer 106 includes silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, One or more of yttrium oxynitride and Ga—Zn oxide can be used.
  • the insulating layer 106 may be a single layer or a laminate.
  • the insulating layer 106 may have, for example, a layered structure of oxide and nitride.
  • gallium oxide, hafnium oxide, zirconium oxide, oxides with aluminum and hafnium, oxynitrides with aluminum and hafnium, oxides with silicon and hafnium, oxynitrides with silicon and hafnium, or Nitrides with silicon and hafnium are mentioned.
  • the insulating layer 106 preferably releases less impurities (eg, water and hydrogen) from itself. Since the amount of impurities released from the insulating layer 106 is small, the diffusion of impurities into the semiconductor layer 108 is suppressed, and the transistor can have favorable electrical characteristics and high reliability.
  • impurities eg, water and hydrogen
  • the insulating layer 106 is formed on the semiconductor layer 108 , it is preferably a film formed under conditions that cause little damage to the semiconductor layer 108 .
  • it can be formed under conditions where the film formation speed (also referred to as film formation rate) is sufficiently slow.
  • the film formation speed also referred to as film formation rate
  • damage to the semiconductor layer 108 can be reduced by forming the insulating layer 106 under low power conditions.
  • the insulating layer 106 will be specifically described by taking a configuration in which a metal oxide is used for the semiconductor layer 108 as an example.
  • oxide or oxynitride at least on the side of the insulating layer 106 that is in contact with the semiconductor layer 108.
  • oxide or oxynitride can be preferably used for the insulating layer 106, for example.
  • a film that releases oxygen by heating is more preferably used for the insulating layer 106 .
  • the insulating layer 106 may have a laminated structure.
  • the insulating layer 106 can have a stacked-layer structure of an oxide layer or an oxynitride layer on the side in contact with the semiconductor layer 108 and a nitride layer on the side in contact with the conductive layer 104 .
  • the oxide layer or the oxynitride layer one or more of silicon oxide and silicon oxynitride can be preferably used, for example. Silicon nitride can be preferably used as the nitride layer.
  • Substrate 102 There are no particular restrictions on the material of the substrate 102, but it must have at least heat resistance to withstand subsequent heat treatment.
  • a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate, It may also be used as the substrate 102 .
  • a substrate having a semiconductor element provided thereon may be used as the substrate 102 .
  • the shape of the semiconductor substrate and the insulating substrate may be circular or rectangular.
  • a flexible substrate may be used as the substrate 102, and the transistor 100 and the like may be formed directly over the flexible substrate.
  • a separation layer may be provided between the substrate 102 and the transistor 100 or the like.
  • the release layer can be used to separate from the substrate 102 and transfer to another substrate after a semiconductor device is partially or wholly completed thereon. At that time, the transistor 100 and the like can be transferred to a substrate having poor heat resistance or a flexible substrate.
  • the region of the semiconductor layer 108 in contact with the insulating layer 110b functions as the other of the source region and the drain region, and the region in contact with the insulating layer 110a functions as a channel formation region. That is, in the semiconductor layer 108, the region in contact with the conductive layer 112b and the region in contact with the insulating layer 110b function as the other of the source region and the drain region in some cases.
  • FIGS. 5A and 5B The channel length and channel width when the region of the semiconductor layer 108 in contact with the insulating layer 110b functions as the other of the source region and the drain region will be described with reference to FIGS. 5A and 5B.
  • 5A is a top view of transistor 100.
  • FIG. FIG. 5B is an enlarged view of FIG. 1B.
  • the channel length L100 of the transistor 100 corresponds to the length of the side surface of the insulating layer 110a on the opening 141 side in a cross-sectional view.
  • the channel length L100 is determined by the film thickness T110a of the insulating layer 110a and the angle ⁇ 110a between the side surface of the insulating layer 110a on the opening 141 side and the formation surface of the insulating layer 110a (here, the upper surface of the conductive layer 112a). , is not affected by the performance of the exposure apparatus used to fabricate the transistor. Therefore, the channel length L100 can be set to a value smaller than the limit resolution of the exposure apparatus, and a fine-sized transistor can be realized. For example, the channel length L100 can be in the ranges described above.
  • the film thickness T110a of the insulating layer 110a is indicated by a dashed-dotted double-headed arrow.
  • the channel length L100 can be controlled by adjusting the film thickness T110a and the angle ⁇ 110a of the insulating layer 110a.
  • the thickness T110a of the insulating layer 110a is preferably 0.01 ⁇ m or more and less than 3 ⁇ m, more preferably 0.05 ⁇ m or more and less than 3 ⁇ m, further preferably 0.1 ⁇ m or more and less than 3 ⁇ m, further preferably 0.15 ⁇ m or more and less than 3 ⁇ m.
  • 0.2 ⁇ m or more and less than 3 ⁇ m more preferably 0.2 ⁇ m or more and less than 2.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 2 ⁇ m, further preferably 0.2 ⁇ m or more and less than 1.5 ⁇ m, and further is preferably 0.3 ⁇ m or more and 1.5 ⁇ m or less, more preferably 0.3 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1 ⁇ m or less, and further is preferably 0.5 ⁇ m or more and 1 ⁇ m or less.
  • the angle ⁇ 110a of the insulating layer 110a is preferably 45 degrees or more and less than 90 degrees, more preferably 50 degrees or more and less than 90 degrees, further preferably 55 degrees or more and less than 90 degrees, further preferably 60 degrees or more and less than 90 degrees. More preferably 60 to 85 degrees, more preferably 65 to 85 degrees, more preferably 65 to 80 degrees, and even more preferably 70 to 80 degrees.
  • the channel width W100 is the length of the lower surface end portion of the insulating layer 110b on the opening 141 side when viewed from above.
  • 5A and 5B show the channel width W100 of the transistor 100 with a solid double-headed arrow.
  • the channel width W100 is determined by the shape of the bottom end of the insulating layer 110b.
  • the width D141a between the ends of the lower surfaces of the insulating layers 110b facing each other in the opening 141 is indicated by a two-dot chain double-headed arrow.
  • the width D141a refers to the shortest rectangular short side that circumscribes the contour of the bottom surface edge of the insulating layer 110b when viewed from above.
  • the width D141a is, for example, preferably 0.2 ⁇ m or more and less than 5 ⁇ m, more preferably 0.2 ⁇ m or more and less than 4.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 4 ⁇ m, further preferably 0.2 ⁇ m or more and less than 3.5 ⁇ m.
  • 0.2 ⁇ m or more and less than 3 ⁇ m more preferably 0.2 ⁇ m or more and less than 2.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 2 ⁇ m, further preferably 0.2 ⁇ m or more and less than 1.5 ⁇ m, Further preferably 0.3 ⁇ m or more and 1.5 ⁇ m or less, further preferably 0.3 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1 ⁇ m or less, Further, it is preferably 0.5 ⁇ m or more and 1 ⁇ m or less.
  • hydrogen may diffuse from the insulating layer 110b into a region of the semiconductor layer 108 which is in contact with the insulating layer 110a.
  • the supply of oxygen from the insulating layer 110a to the semiconductor layer 108 suppresses an increase in oxygen vacancies (V 0 ) and V OH in a region of the semiconductor layer 108 in contact with the insulating layer 110a. Therefore, at least a region of the semiconductor layer 108 in contact with the insulating layer 110a can function as a channel formation region, and the transistor can exhibit favorable electrical characteristics and high reliability.
  • FIG. 1A can be referred to for a top view of a transistor 100A that can be applied to a semiconductor device that is one embodiment of the present invention.
  • FIG. 6A shows a cross-sectional view taken along the dashed line A1-A2 shown in FIG. 1A
  • FIG. 6B shows a cross-sectional view taken along the dashed-dotted line B1-B2. See FIG. 2 for a perspective view of the transistor 100A.
  • the transistor 100A mainly differs from the transistor 100 described above in that the insulating layer 110 has an insulating layer 110c.
  • the insulating layer 110 has a laminated structure of an insulating layer 110c, an insulating layer 110a on the insulating layer 110c, and an insulating layer 110b on the insulating layer 110a.
  • the insulating layer 110c has regions in contact with the top surface of the substrate 102 and the top surface and side surfaces of the conductive layer 112a.
  • the insulating layer 110c functions as a blocking film that suppresses desorption of gas from the insulating layer 110a.
  • the insulating layer 110c is preferably made of a material that makes it difficult for gas to diffuse.
  • the insulating layer 110c preferably has a region with a higher film density than the insulating layer 110a.
  • the blocking property can be improved by increasing the film density of the insulating layer 110c.
  • the insulating layer 110c preferably has, for example, a region containing more nitrogen than the insulating layer 110a.
  • a material containing more nitrogen than the insulating layer 110a can be used. By increasing the nitrogen content of the insulating layer 110c, the blocking property can be improved.
  • the insulating layer 110c may have a thickness that functions as a blocking film that suppresses desorption of gas from the insulating layer 110a, and may be thinner than the insulating layer 110a.
  • the deposition rate of the insulating layer 110c is preferably slower than the deposition rate of the insulating layer 110a. By slowing down the deposition rate of the insulating layer 110c, the film density of the insulating layer 110c can be increased and the blocking property can be improved. Similarly, by increasing the substrate temperature during the deposition of the insulating layer 110c, the film density of the insulating layer 110c can be increased and the blocking property can be improved.
  • the film densities are different. Therefore, in a cross-sectional transmission electron microscope (TEM) image or the like, the boundary between these layers can be observed as a difference in contrast. Sometimes we can. In TEM observation, the higher the film density, the darker (dark) the transmission electron (TE) image, and the lower the film density, the lighter (brighter) the transmission electron (TE) image. Therefore, in a transmission electron (TE) image, the insulating layer 110c may appear darker (darker) than the insulating layer 110a.
  • TEM transmission electron microscope
  • the insulating layer 110a may have a region with a higher hydrogen concentration than the insulating layer 110c.
  • a difference in hydrogen concentration between the insulating layer 110a and the insulating layer 110c can be evaluated by secondary ion mass spectrometry (SIMS), for example.
  • SIMS secondary ion mass spectrometry
  • a material that can be used for the insulating layer 110b can be used for the insulating layer 110c.
  • the insulating layer 110c may use the same material as the insulating layer 110b, or may use a different material.
  • a case where an oxide semiconductor is used for the semiconductor layer 108 will be taken as an example to specifically describe the insulating layer 110c.
  • the insulating layer 110c is preferably impermeable to oxygen.
  • the insulating layer 110c functions as a blocking film that suppresses desorption of oxygen from the insulating layer 110a.
  • Oxygen contained in the insulating layer 110a might oxidize the conductive layer 112a and increase the resistance thereof. Further, the conductive layer 112a is oxidized by oxygen contained in the insulating layer 110a, so that the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 is reduced in some cases. By providing the insulating layer 110c between the insulating layer 110a and the conductive layer 112a, oxidation of the conductive layer 112a and an increase in resistance can be suppressed.
  • the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 increases, oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced, good electrical characteristics are exhibited, and A highly reliable transistor can be obtained.
  • the insulating layer 110c is preferably impermeable to impurities.
  • the insulating layer 110 c functions as a blocking film that suppresses diffusion of impurities from the substrate 102 side to the semiconductor layer 108 through the insulating layer 110 .
  • impurities include water, hydrogen, and sodium.
  • the insulating layer 110c preferably has a thickness that functions as a blocking film for oxygen and hydrogen. If the film thickness of the insulating layer 110c is thin, the function as a blocking film may deteriorate. On the other hand, if the thickness of the insulating layer 110c is large, the region of the semiconductor layer 108 in contact with the insulating layer 110a becomes narrow, and the amount of oxygen supplied from the insulating layer 110a to the semiconductor layer 108 may decrease. The film thickness of the insulating layer 110c may be thinner than the film thickness of the insulating layer 110a.
  • the thickness of the insulating layer 110c is preferably 5 nm or more and 100 nm or less, more preferably 5 nm or more and 70 nm or less, further preferably 10 nm or more and 70 nm or less, further preferably 10 nm or more and 50 nm or less, further preferably 20 nm or more and 50 nm or less. , and more preferably 20 nm or more and 40 nm or less.
  • the insulating layer 110c preferably releases less impurities (eg, water and hydrogen) from itself. By reducing the release of impurities from the insulating layer 110c, the diffusion of impurities into the semiconductor layer 108 is suppressed, and the transistor can have favorable electrical characteristics and high reliability.
  • impurities eg, water and hydrogen
  • a region of the semiconductor layer 108 in contact with the insulating layer 110c may function as one of a source region and a drain region.
  • the region of the semiconductor layer 108 in contact with the insulating layer 110b may function as the other of the source region and the drain region.
  • a region in contact with the insulating layer 110a may function as a channel formation region.
  • the channel length L100 of the transistor 100A is the length of the side surface of the insulating layer 110a on the opening 141 side in a cross-sectional view. length (see FIG. 5B).
  • hydrogen may diffuse from the insulating layer 110c into a region of the semiconductor layer 108 which is in contact with the insulating layer 110a.
  • hydrogen may diffuse from the insulating layer 110b into a region of the semiconductor layer 108 which is in contact with the insulating layer 110a.
  • the supply of oxygen from the insulating layer 110a to the semiconductor layer 108 suppresses an increase in oxygen vacancies (V 0 ) and V OH in a region of the semiconductor layer 108 in contact with the insulating layer 110a. Therefore, at least a region of the semiconductor layer 108 in contact with the insulating layer 110a can function as a channel formation region, and the transistor can exhibit favorable electrical characteristics and high reliability.
  • the configuration of the insulating layer 110 shown here can also be applied to other configuration examples.
  • FIG. 1A can be referred to for a top view of a transistor 100B that can be applied to a semiconductor device that is one embodiment of the present invention.
  • FIG. 7A shows a cross-sectional view taken along the dashed line A1-A2 in FIG. 1A
  • FIG. 7B shows a cross-sectional view taken along the dashed-dotted line B1-B2. See FIG. 2 for a perspective view of the transistor 100B.
  • the transistor 100B is mainly different from the transistor 100 described above in that the insulating layer 110a has a laminated structure.
  • the insulating layer 110a has a laminated structure of an insulating layer 110a_1 and an insulating layer 110a_2 on the insulating layer 110a_1. Materials that can be used for the insulating layer 110a can be used for each of the insulating layers 110a_1 and 110a_2. The same material or different materials may be used for the insulating layers 110a_1 and 110a_2. Further, the insulating layer 110a_1 and the insulating layer 110a_2 may have different thicknesses.
  • the stress of the insulating layer 110a increases, which may cause warping of the substrate.
  • the insulating layer 110a in multiple steps, it may be possible to suppress the occurrence of problems during the process due to stress.
  • FIGS. 7A and 7B show a structure in which the insulating layer 110a has a two-layer structure, one embodiment of the present invention is not limited to this.
  • the insulating layer 110a may have a laminated structure of three or more layers.
  • TEM transmission electron microscope
  • the configuration of the insulating layer 110 shown here can also be applied to other configuration examples.
  • FIG. 8A A top view of a transistor 100C that can be applied to a semiconductor device that is one embodiment of the present invention is shown in FIG. 8A.
  • FIG. 8B shows a cross-sectional view taken along the dashed-dotted line A1-A2 shown in FIG. 8A
  • FIG. 8C shows a cross-sectional view taken along the dashed-dotted line B1-B2. See FIG. 2 for a perspective view of the transistor 100C.
  • the transistor 100C differs from the transistor 100 described above mainly in that the top surface shape of the opening 143 does not match the top surface shape of the opening 141 .
  • the opening 143 includes the opening 141 when viewed from above.
  • the end of the conductive layer 112b on the opening 143 side is located outside the end of the insulating layer 110 on the opening 141 side.
  • the step on the surface on which the layer 106) is formed is reduced. Therefore, coverage of layers formed over the conductive layer 112b and the semiconductor layer 108 can be improved, and problems such as disconnection or voids in the layers can be suppressed.
  • FIG. 9A is a top view of transistor 100C.
  • FIG. 9B is an enlarged view of FIG. 8B.
  • the channel length L100 of the transistor 100C is indicated by a dashed double-headed arrow.
  • the width D141 of the opening 141 is indicated by a dotted double-headed arrow
  • the width D143 of the opening 143 is indicated by a two-dot chain double-headed arrow.
  • the width D141 indicates the shortest short side of the rectangle that circumscribes the opening 141 when viewed from above.
  • the channel length L100 of the transistor 100C is the distance between the end of the conductive layer 112b on the opening 143 side and the end of the insulating layer 110 on the opening 141 side, and the length of the side surface of the insulating layer 110 on the opening 141 side. corresponds to the sum of That is, the channel length L100 can be adjusted by the width D141 of the opening 141, the width D143 of the opening 143, the thickness T110 of the insulating layer 110, and the angle ⁇ 110.
  • the channel length L100 is preferably within the range described above.
  • the width D143 is preferably within the range described above.
  • Width D141 is preferably smaller than width D143.
  • the width D141 is, for example, preferably 0.2 ⁇ m or more and less than 5 ⁇ m, more preferably 0.2 ⁇ m or more and less than 4.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 4 ⁇ m, further preferably 0.2 ⁇ m or more and less than 3.5 ⁇ m.
  • 0.2 ⁇ m or more is preferably less than 0.2 ⁇ m or more, more preferably less than 3 ⁇ m, more preferably 0.2 ⁇ m or more and less than 2.5 ⁇ m, further preferably 0.2 ⁇ m or more and less than 2 ⁇ m, further preferably 0.2 ⁇ m or more and less than 1.5 ⁇ m It is preferably 0.3 ⁇ m or more and 1.5 ⁇ m or less, further preferably 0.3 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1.2 ⁇ m or less, further preferably 0.4 ⁇ m or more and 1 ⁇ m or less. It is preferably 0.5 ⁇ m or more and 1 ⁇ m or less.
  • the channel width W100 is the length of the end of the conductive layer 112b on the opening 143 side when viewed from above.
  • the width D143 corresponds to the diameter of the opening 143, and the channel width W100 can be calculated as "D143 ⁇ ".
  • a region of the semiconductor layer 108 in contact with the insulating layer 110b functions as the other of a source region and a drain region
  • a region in contact with the insulating layer 110a functions as the other of the source region and the drain region. It may function as a channel formation region. That is, in the semiconductor layer 108, the region in contact with the conductive layer 112b and the region in contact with the insulating layer 110b function as the other of the source region and the drain region in some cases.
  • the configuration of the openings 141 and 143 shown here can also be applied to other configuration examples.
  • FIG. 10A A top view of a transistor 100D that can be applied to a semiconductor device that is one embodiment of the present invention is shown in FIG. 10A.
  • FIG. 10B shows a cross-sectional view taken along the dashed-dotted line A1-A2 shown in FIG. 10A
  • FIG. 10C shows a cross-sectional view taken along the dashed-dotted line B1-B2.
  • the transistor 100D is mainly different from the transistor 100 described above in that the insulating layer 106 has a region in contact with the side surface of part of the semiconductor layer 108 .
  • a part of the end of the conductive layer 112b on the side not facing the opening 143 is located on the semiconductor layer . It can be said that part of the end of the conductive layer 112 b on the side not facing the opening 143 is in contact with the upper surface of the semiconductor layer 108 .
  • Example of manufacturing method> A method for manufacturing a semiconductor device of one embodiment of the present invention is described below with reference to drawings.
  • a structure in which an oxide semiconductor is used for the semiconductor layer 108 of the transistor 100A illustrated in FIG. 6A and the like will be described as an example.
  • the thin films (insulating film, semiconductor film, conductive film, etc.) constituting the semiconductor device can be formed by sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD). ) method, atomic layer deposition (ALD) method, or the like.
  • the CVD method includes a plasma enhanced CVD (PECVD) method, a thermal CVD method, and the like.
  • PECVD plasma enhanced CVD
  • thermal CVD methods is the metal organic CVD (MOCVD) method.
  • Thin films that make up semiconductor devices can be processed by spin coating, dip coating, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, and knife coating. It can be formed by a method such as coating.
  • a photolithography method or the like can be used when processing the thin films that make up the semiconductor device.
  • the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like.
  • an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.
  • the photolithography method typically includes the following two methods. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by etching or the like, and removing the resist mask. The other is a method of forming a photosensitive thin film, then performing exposure and development to process the thin film into a desired shape.
  • the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • An electron beam can also be used instead of the light used for exposure. The use of extreme ultraviolet light, X-rays, or electron beams is preferable because extremely fine processing is possible.
  • a photomask is not necessary when exposure is performed by scanning a beam such as an electron beam.
  • a dry etching method, a wet etching method, a sandblasting method, or the like can be used to etch the thin film.
  • 11A1 to 15B2 each illustrate a method for manufacturing the transistor 100A.
  • A1 and B1 show perspective views
  • A2 and B2 show cross-sectional views taken along the dashed-dotted line A1-A2 and the dashed-dotted line B1-B2.
  • the substrate 102 is omitted in A1 and B1 of each figure.
  • the insulating layer 110 is transparent, and the outline is indicated by a dashed line.
  • a conductive film to be the conductive layer 112 a is formed over the substrate 102 .
  • a sputtering method for example, can be suitably used to form the conductive film.
  • the conductive film is processed to form an island-shaped conductive layer 112a functioning as one of a source electrode and a drain electrode (FIGS. 11A1 and 11A2).
  • One or both of a wet etching method and a dry etching method may be used for processing the conductive film.
  • insulating film 110cf and insulating film 110af are formed over the substrate 102 and the conductive layer 112a (FIGS. 11B1 and 11B2).
  • the PECVD method can be suitably used for the formation of the insulating film 110cf and the insulating film 110af.
  • the PECVD method can be suitably used.
  • impurities include, for example, water and organic matter.
  • the substrate temperature during the formation of the insulating film 110cf and the insulating film 110af is preferably 180° C. or higher and 450° C. or lower, more preferably 200° C. or higher and 450° C. or lower, further preferably 250° C. or higher and 450° C. or lower, further preferably 300° C. or higher. C. or higher and 450.degree. C. or lower are preferable, 300.degree. C. or higher and 400.degree.
  • impurities for example, water and hydrogen
  • the insulating film 110cf and the insulating film 110af are formed before the semiconductor layer 108 is formed, there is no need to worry about desorption of oxygen from the semiconductor layer 108 due to heat applied during formation of the insulating film 110cf and the insulating film 110af. do not have.
  • Heat treatment may be performed after the insulating film 110cf and the insulating film 110af are formed. By the heat treatment, water and hydrogen can be released from the surfaces and inside of the insulating films 110cf and 110af.
  • the temperature of the heat treatment is preferably 150° C. or higher and lower than the strain point of the substrate, more preferably 200° C. or higher and 450° C. or lower, further preferably 250° C. or higher and 450° C. or lower, further preferably 300° C. or higher and 450° C. or lower. More preferably 300° C. or higher and 400° C. or lower, more preferably 350° C. or higher and 400° C. or lower.
  • Heat treatment can be performed in an atmosphere containing one or more of noble gas, nitrogen, and oxygen. Dry air (CDA: Clean Dry Air) may be used as the atmosphere containing nitrogen or the atmosphere containing oxygen. Note that it is preferable that the content of hydrogen, water, or the like in the atmosphere is as small as possible.
  • CDA Clean Dry Air
  • a high-purity gas with a dew point of ⁇ 60° C. or lower, preferably ⁇ 100° C. or lower.
  • a dew point of ⁇ 60° C. or lower, preferably ⁇ 100° C. or lower.
  • an atmosphere containing as little hydrogen, water, or the like as possible entry of hydrogen, water, or the like into the insulating film 110cf and the insulating film 110af can be prevented as much as possible.
  • an oven, a rapid thermal annealing (RTA) device, or the like can be used for the heat treatment. The heat treatment time can be shortened by using the RTA apparatus.
  • a metal oxide layer 149 is formed on the insulating film 110af (FIGS. 12A1 and 12A2).
  • the conductivity of the metal oxide layer 149 does not matter. At least one of an insulating layer, a semiconductor layer, and a conductive layer can be used for the metal oxide layer 149 .
  • Metal oxide layer 149 can also be, for example, aluminum oxide, hafnium oxide, hafnium aluminate, indium oxide, indium tin oxide (ITO), or silicon-containing indium tin oxide (ITSO).
  • an oxide material containing one or more of the same elements is preferably used as the semiconductor layer 108 as the metal oxide layer 149 .
  • an oxide semiconductor material applicable to the semiconductor layer 108 is preferably used.
  • a metal oxide film formed using a sputtering target having the same composition as the semiconductor layer 108 can be used as the metal oxide layer 149 .
  • the use of sputtering targets with the same composition is preferable because the manufacturing apparatus and sputtering targets can be used in common.
  • a material with a higher gallium composition (content rate) than the semiconductor layer 108 is used for the metal oxide layer 149.
  • a material having a high gallium composition (content rate) for the metal oxide layer 149 because the blocking property against oxygen can be further improved.
  • the field-effect mobility of the transistor can be increased.
  • the metal oxide layer 149 is preferably formed, for example, in an atmosphere containing oxygen. In particular, it is preferably formed by a sputtering method in an atmosphere containing oxygen. Oxygen can thus be suitably supplied to the insulating film 110af when the metal oxide layer 149 is formed.
  • the metal oxide layer 149 may be formed by a reactive sputtering method using oxygen as a deposition gas and a metal target.
  • a reactive sputtering method using oxygen as a deposition gas and a metal target.
  • an aluminum oxide film can be formed.
  • the oxygen supplied to the insulating film 110af can be increased as the oxygen flow ratio of the deposition gas introduced into the treatment chamber of the deposition apparatus or the oxygen partial pressure in the treatment chamber is higher.
  • the oxygen flow ratio or oxygen partial pressure is, for example, 50% to 100%, preferably 65% to 100%, more preferably 80% to 100%, and even more preferably 90% to 100%.
  • the metal oxide layer 149 By forming the metal oxide layer 149 by a sputtering method in an atmosphere containing oxygen in this manner, oxygen is supplied to the insulating film 110af and oxygen is released from the insulating film 110af when the metal oxide layer 149 is formed. can prevent you from doing it. As a result, a large amount of oxygen can be confined in the insulating film 110af. Then, a large amount of oxygen can be supplied to the semiconductor layer 108 by heat treatment performed later. As a result, oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced, and the transistor can have favorable electrical characteristics and high reliability.
  • heat treatment may be performed. Since the above description can be referred to for the heat treatment, detailed description thereof is omitted.
  • oxygen can be effectively supplied from the metal oxide layer 149 to the insulating film 110af.
  • oxygen may be supplied to the insulating film 110af through the metal oxide layer 149.
  • a method for supplying oxygen for example, an ion implantation method, an ion doping method, a plasma immersion ion implantation method, or plasma treatment can be used.
  • the plasma treatment an apparatus that transforms oxygen gas into plasma with high-frequency power can be preferably used.
  • a plasma etching apparatus and a plasma ashing apparatus, for example, are exemplified as apparatuses that turn gas into plasma with high-frequency power.
  • wet etching can be preferably used.
  • wet etching By using wet etching, etching of the insulating film 110af can be suppressed when the metal oxide layer 149 is removed. Accordingly, it is possible to prevent the thickness of the insulating film 110af from being thinned, and to make the thickness of the insulating layer 110a uniform.
  • the process of supplying oxygen to the insulating film 110af is not limited to the method described above.
  • oxygen radicals, oxygen atoms, oxygen atomic ions, oxygen molecular ions, and the like are supplied to the insulating film 110af by an ion doping method, an ion implantation method, a plasma treatment, or the like.
  • oxygen may be supplied to the insulating film 110af through the film. The film is preferably removed after supplying oxygen.
  • a conductive film or a semiconductor film containing at least one of indium, zinc, gallium, tin, aluminum, chromium, tantalum, titanium, molybdenum, nickel, iron, cobalt, or tungsten is used as the film that suppresses desorption of oxygen. be able to.
  • an insulating film 110bf to be the insulating layer 110b is formed on the insulating film 110af (FIGS. 12B1 and 12B2).
  • the description regarding the formation of the insulating film 110af and the insulating film 110cf can be referred to, so detailed description thereof is omitted.
  • the insulating film 110f (the insulating film 110af, the insulating film 110bf, and the insulating film 110cf) in the region overlapping with the conductive layer 112a is removed, and the insulating layer 110 having the opening 141 (the insulating layer 110a, the insulating layer 110b, and the insulating layer 110c) is removed.
  • a wet etching method and a dry etching method can be used to form the opening 141 .
  • a dry etching method for example, can be preferably used to form the opening 141 .
  • a metal oxide film 108f to be the semiconductor layer 108 is formed so as to cover the opening 141 (FIGS. 13B1 and 13B2).
  • the metal oxide film 108f is provided in contact with the top and side surfaces of the insulating layer 110 and the top surface of the conductive layer 112a.
  • the metal oxide film 108f is preferably formed by a sputtering method using a metal oxide target.
  • the metal oxide film 108f is preferably a dense film with as few defects as possible.
  • the metal oxide film 108f preferably has high purity with reduced impurities including hydrogen elements as much as possible.
  • oxygen gas when forming the metal oxide film 108f.
  • oxygen gas when forming the metal oxide film 108f, oxygen can be suitably supplied into the insulating layer 110.
  • FIG. For example, when oxide or oxynitride is used for the insulating layer 110a, oxygen can be preferably supplied to the insulating layer 110a.
  • oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 can be reduced.
  • oxygen gas may be mixed with an inert gas (eg, helium gas, argon gas, xenon gas, etc.).
  • an inert gas eg, helium gas, argon gas, xenon gas, etc.
  • the crystallinity of the metal oxide film 108f can be increased as the oxygen flow rate of the deposition gas or the oxygen partial pressure in the treatment chamber when the metal oxide film 108f is formed is higher, and the reliability of the transistor is increased. can be realized.
  • the lower the oxygen flow ratio or the oxygen partial pressure the lower the crystallinity of the metal oxide film 108f, so that the transistor can have a large on-state current.
  • the substrate temperature during formation of the metal oxide film 108f should be room temperature or higher and 250°C or lower, preferably room temperature or higher and 200°C or lower, and more preferably room temperature or higher and 140°C or lower. For example, if the substrate temperature is room temperature or higher and 140° C. or lower, the productivity is increased, which is preferable. Crystallinity can be lowered by forming the metal oxide film 108f with the substrate temperature set to room temperature or without heating the substrate.
  • At least one of a process for desorbing water, hydrogen, and organic substances adsorbed on the surface of the insulating layer 110 and a process for supplying oxygen into the insulating layer 110 is performed. It is preferable to do one.
  • heat treatment can be performed at a temperature of 70° C. to 200° C. in a reduced pressure atmosphere.
  • plasma treatment may be performed in an atmosphere containing oxygen.
  • oxygen may be supplied to the insulating layer 110 by plasma treatment in an atmosphere containing an oxidizing gas such as dinitrogen monoxide (N 2 O).
  • N 2 O dinitrogen monoxide
  • oxygen can be supplied while organic substances on the surface of the insulating layer 110 are preferably removed. After such treatment, it is preferable to continuously form a metal oxide film 108f without exposing the surface of the insulating layer 110 to the atmosphere.
  • the semiconductor layer 108 has a stacked structure, after the first metal oxide film is formed, the next metal oxide film is formed continuously without exposing the surface to the atmosphere. is preferred.
  • the metal oxide film 108f is processed into an island shape to form the semiconductor layer 108 (FIGS. 14A1 and 14A2).
  • Either or both of a wet etching method and a dry etching method can be used to form the semiconductor layer 108 .
  • a wet etching method for example, can be preferably used to form the semiconductor layer 108 .
  • part of the insulating layer 110 in a region that does not overlap with the semiconductor layer 108 is etched, and the thickness of the insulating layer 110 may be reduced.
  • the insulating layer 110b of the insulating layer 110 may disappear by etching, and the surface of the insulating layer 110a may be exposed.
  • the etching of the metal oxide film 108f by using a material with a high selection ratio for the insulating layer 110b, it is possible to suppress the thickness of the insulating layer 110b from being thinned.
  • Heat treatment is preferably performed after the metal oxide film 108f is formed or after the metal oxide film 108f is processed into the semiconductor layer 108. Hydrogen or water contained in the metal oxide film 108f or the semiconductor layer 108 or adsorbed to the surface can be removed by the heat treatment. Further, the heat treatment may improve the film quality of the metal oxide film 108f or the semiconductor layer 108 (eg, reduce defects, improve crystallinity, and the like).
  • Oxygen can also be supplied from the insulating layer 110a to the metal oxide film 108f or the semiconductor layer 108 by heat treatment. At this time, heat treatment is preferably performed before the semiconductor layer 108 is processed. Since the above description can be referred to for the heat treatment, detailed description thereof is omitted.
  • the heat treatment does not have to be performed if unnecessary. Further, the heat treatment may not be performed here, and may be combined with the heat treatment performed in a later step. Further, in some cases, the heat treatment can also be performed in a high-temperature treatment in a later process (for example, a film formation process).
  • a conductive film 112f to be the conductive layer 112b is formed over the semiconductor layer 108 (FIGS. 14B1 and 14B2).
  • a sputtering method for example, can be preferably used to form the conductive film 112f.
  • the conductive film 112f is processed to form a conductive layer 112b having an opening 143 (FIGS. 15A1 and 15A2).
  • the opening 143 is formed in a region overlapping with the opening 141 .
  • Either or both of a wet etching method and a dry etching method can be used to form the conductive layer 112b.
  • a wet etching method for example, can be preferably used to form the conductive layer 112b.
  • the conductive layer 112 b preferably does not contact the semiconductor layer 108 in the opening 141 .
  • the channel length L100 of the transistor may be shorter than the length of the side surface of the insulating layer 110, making it difficult to control the channel length L100. Therefore, it is preferable that the top surface shape of the opening 143 matches the top surface shape of the opening 141, or that the opening 143 includes the opening 141 when viewed from the top.
  • the thickness of the semiconductor layer 108 in the region not overlapping with the conductive layer 112b may be thinner than the thickness of the semiconductor layer 108 in the region overlapping with the conductive layer 112b.
  • the thickness of the insulating layer 110 in a region that does not overlap with the conductive layer 112b is thinner than the thickness of the insulating layer 110 that overlaps with the conductive layer 112b.
  • the insulating layer 110b of the insulating layer 110 may disappear by etching, and the surface of the insulating layer 110a may be exposed. Note that in the etching of the conductive film 112f, thinning of the insulating layer 110b can be suppressed by using a material with a high selectivity for the insulating layer 110b.
  • a cleaning process may be performed after the conductive layer 112b is formed.
  • As the cleaning treatment wet cleaning using a cleaning solution or the like, plasma treatment using plasma, or cleaning by heat treatment can be used. Any suitable combination of the washings described above may be carried out.
  • the surface of the semiconductor layer 108 may be damaged during the formation of the conductive layer 112b.
  • V 2 O is formed in the damaged semiconductor layer 108, and V 2 OH may be further formed.
  • the damaged layer can be removed.
  • impurities eg, metals and organic substances adhering to the surface of the semiconductor layer 108 during formation of the conductive layer 112b can be removed.
  • a cleaning solution containing one or more of phosphoric acid, oxalic acid, and hydrochloric acid can be used.
  • Wet cleaning can preferably use a cleaning liquid containing phosphoric acid.
  • the concentration of the cleaning liquid is preferably determined in consideration of the etching rate for the semiconductor layer 108 .
  • the phosphoric acid concentration is preferably 0.01 weight % or more and 5 weight % or less, more preferably 0.02 weight % or more and 4 weight % or less, further preferably 0.05 weight % or more and 3 weight % or less.
  • It is preferably 0.1 weight % or more and 2 weight % or less, further preferably 0.15 weight % or more and 1 weight % or less.
  • concentration within the range described above, it is possible to suppress the disappearance of the semiconductor layer 108 and effectively remove damaged layers of the semiconductor layer 108 and impurities (for example, metals and organic substances) adhering to the semiconductor layer 108 . can be removed well.
  • Plasma treatments can use gases including, for example, one or more of oxygen, ozone, nitrogen, nitrous oxide (N 2 O), and argon.
  • the plasma treatment preferably uses a gas containing oxygen.
  • organic matter on the surface of the semiconductor layer 108 can be preferably removed by using a gas containing dinitrogen monoxide (N 2 O).
  • a PECVD device or an etching device can be used for plasma processing.
  • plasma treatment and formation of the insulating layer 106 may be performed continuously in a PECVD apparatus. After the plasma treatment, the insulating layer 106 is continuously formed using the same apparatus, so that the surface of the semiconductor layer 108 is not exposed to the atmosphere, and impurities (for example, water and organic substances) are not present at the interface between the semiconductor layer 108 and the insulating layer 106 . ) can be suppressed from adhering.
  • impurities for example, water and organic substances
  • the insulating layer 106 is formed to cover the semiconductor layer 108, the conductive layer 112b, and the insulating layer 110.
  • FIG. The PECVD method can be suitably used for forming the insulating layer 106 .
  • the insulating layer 106 When an oxide semiconductor is used for the semiconductor layer 108, the insulating layer 106 preferably functions as a barrier film that suppresses diffusion of oxygen. Since the insulating layer 106 has a function of suppressing diffusion of oxygen, diffusion of oxygen from the insulating layer 106 to the conductive layer 104 can be suppressed, and oxidation of the conductive layer 104 can be suppressed. As a result, the transistor can have favorable electrical characteristics and high reliability.
  • the insulating layer 106 By increasing the temperature at which the insulating layer 106 functioning as a gate insulating layer is formed, the insulating layer can have few defects. However, if the insulating layer 106 is formed at a high temperature, oxygen is released from the semiconductor layer 108, and oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 may increase.
  • the substrate temperature during formation of the insulating layer 106 is preferably 180° C. to 450° C., more preferably 200° C. to 450° C., further preferably 250° C. to 450° C., further preferably 300° C. to 450° C. is preferred, and 300° C. or higher and 400° C. or lower is more preferred.
  • the transistor can have favorable electrical characteristics and high reliability.
  • Plasma treatment may be performed on the surface of the semiconductor layer 108 before forming the insulating layer 106 . Impurities such as water adsorbed to the surface of the semiconductor layer 108 can be reduced by the plasma treatment. Therefore, impurities at the interface between the semiconductor layer 108 and the insulating layer 106 can be reduced, and a highly reliable transistor can be realized. In particular, it is suitable when the surface of the semiconductor layer 108 is exposed to the atmosphere between the formation of the semiconductor layer 108 and the formation of the insulating layer 106 . Plasma treatment can be performed, for example, in an atmosphere of oxygen, ozone, nitrogen, dinitrogen monoxide, argon, or the like. Further, plasma treatment and deposition of the insulating layer 106 are preferably performed successively without exposure to the air.
  • a conductive film to be the conductive layer 104 is formed over the insulating layer 106 .
  • a sputtering method for example, can be suitably used to form the conductive film.
  • the conductive film is processed to form an island-shaped conductive layer 104 functioning as a gate electrode (FIGS. 15B1 and 15B2).
  • the transistor 100A can be manufactured.
  • the display device of this embodiment can be a high-definition display device. Therefore, the display device of the present embodiment includes, for example, wristwatch-type and bracelet-type information terminal devices (wearable devices), VR devices such as head-mounted displays (HMD), and eyeglass-type devices. It can be used for the display part of wearable equipment that can be worn on the head, such as equipment for AR.
  • wearable devices wristwatch-type and bracelet-type information terminal devices
  • VR devices such as head-mounted displays (HMD)
  • eyeglass-type devices It can be used for the display part of wearable equipment that can be worn on the head, such as equipment for AR.
  • the display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used, for example, in televisions, desktop or notebook personal computers, monitors for computers, digital signage, and relatively large screens such as large game machines such as pachinko machines. It can be used for display portions of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices, in addition to electronic devices equipped with
  • FIG. 16 shows a perspective view of the display device 200A.
  • the display device 200A has a configuration in which a substrate 152 and a substrate 151 are bonded together.
  • the substrate 152 is indicated by dashed lines.
  • the display device 200A has a display section 162, a connection section 140, a circuit 164, wiring 165, and the like.
  • FIG. 16 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 200A. Therefore, the configuration shown in FIG. 16 can also be said to be a display module including the display device 200A, an IC (integrated circuit), and an FPC.
  • the display unit 162 has a plurality of pixels arranged in a matrix. Each pixel has multiple sub-pixels.
  • Each sub-pixel has a display device (also called a display element).
  • display devices include liquid crystal devices (also referred to as liquid crystal elements) and light-emitting devices.
  • the light emitting device for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used.
  • the light-emitting substance included in the light-emitting device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF). materials), and inorganic compounds (quantum dot materials, etc.).
  • LEDs such as micro LED (Light Emitting Diode), can also be used as a light emitting device.
  • the emission color of the light emitting device can be infrared, red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • a display device of one embodiment of the present invention includes a light-emitting device manufactured for each emission color, and is capable of full-color display.
  • a display device of one embodiment of the present invention is a top emission type in which light is emitted in a direction opposite to a substrate over which a light-emitting device is formed, and light is emitted toward a substrate over which a light-emitting device is formed.
  • a bottom emission type bottom emission type
  • a double emission type dual emission type in which light is emitted from both sides may be used.
  • connection part 140 is provided outside the display part 162 .
  • the connecting portion 140 can be provided, for example, along one side or a plurality of sides of the display portion 162 .
  • the shape of the upper surface of the connecting portion 140 is not particularly limited, and may be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like.
  • the number of connection parts 140 may be singular or plural.
  • FIG. 16 shows an example in which the connecting portion 140 is provided so as to surround the four sides of the display portion 162 .
  • the connection portion 140 can also be called a cathode contact portion.
  • a scanning line driving circuit can be used.
  • the wiring 165 has a function of supplying signals and power to the display section 162 and the circuit 164 .
  • the signal and power are input to the wiring 165 from the outside through the FPC 172 or input to the wiring 165 from the IC 173 .
  • FIG. 16 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like.
  • a COG Chip On Glass
  • COF Chip On Film
  • the IC 173 for example, an IC having a scanning line driver circuit or a signal line driver circuit can be applied.
  • the display device 200A and the display module may be configured without an IC.
  • the IC may be mounted on the FPC by the COF method or the like.
  • Cross-sections of the display device 200A when part of the area including the FPC 172, part of the circuit 164, part of the display part 162, part of the connection part 140, and part of the area including the end are cut. An example of is shown in FIG.
  • a display device 200A illustrated in FIG. 17 includes a transistor 201, a transistor 205R, a transistor 205G, a transistor 205B, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, and the like between substrates 151 and 152.
  • a transistor 201 , a transistor 205 R, a transistor 205 G, and a transistor 205 B are provided over the substrate 151 .
  • An insulating layer 218 and an insulating layer 235 over the insulating layer 218 are provided to cover the transistors 201, 205R, 205G, and 205B.
  • the light emitting device 130R, the light emitting device 130G and the light emitting device 130B are provided.
  • the light-emitting device 130 When describing items common to the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B, they may be referred to as the light-emitting device 130, omitting the letters that distinguish them. Similarly, for constituent elements that are distinguished by letters, such as the transistor 205R, the transistor 205G, and the transistor 205B, there are cases where the letters are omitted when describing common items.
  • the transistors 201 , 205 R, 205 G, and 205 B are all formed over the substrate 151 . These transistors can be made with the same material and the same process.
  • the transistor described in Embodiment 1 can be preferably used as the transistor 201, the transistor 205R, the transistor 205G, and the transistor 205B.
  • FIG. 17 shows a configuration in which the transistor 100A shown in FIG. 6 is applied to the transistors 201, 205R, 205G, and 205B.
  • the display device can have a narrow frame.
  • the transistor included in the circuit 164 and the transistor included in the display portion 162 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 164 may all have the same structure, or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 162 may all be the same, or may be of two or more types.
  • All of the transistors in the display portion 162 may be OS transistors, all of the transistors in the display portion 162 may be Si transistors, or some of the transistors in the display portion 162 may be OS transistors and the rest may be Si transistors. good.
  • a transistor using LTPS hereinafter referred to as an LTPS transistor may be used as the Si transistor.
  • LTPS transistors and OS transistors in the display portion 162 a display device with low power consumption and high driving capability can be realized.
  • a structure in which an LTPS transistor and an OS transistor are combined is sometimes called an LTPO.
  • an OS transistor as a transistor that functions as a switch for controlling conduction/non-conduction between wirings, and use an LTPS transistor as a transistor that controls current.
  • one of the transistors included in the display portion 162 functions as a transistor for controlling the current flowing through the light emitting device and can also be called a driving transistor.
  • One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light emitting device.
  • An LTPS transistor is preferably used as the driving transistor. This makes it possible to increase the current flowing through the light emitting device in the pixel circuit.
  • the other transistor included in the display portion 162 functions as a switch for controlling selection/non-selection of pixels and can also be called a selection transistor.
  • the gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line).
  • An OS transistor is preferably used as the selection transistor.
  • Each of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B has a pair of electrodes and a layer sandwiched between the pair of electrodes.
  • the layer has at least a light-emitting layer.
  • one electrode functions as an anode and the other electrode functions as a cathode.
  • the case where the pixel electrode functions as an anode and the common electrode functions as a cathode may be taken as an example.
  • the light-emitting device 130R has a pixel electrode 111R on the insulating layer 235, an island-shaped layer 113R on the pixel electrode 111R, and a common electrode 115 on the island-shaped layer 113R.
  • the light-emitting device 130G has a pixel electrode 111G on the insulating layer 235, an island-shaped layer 113G on the pixel electrode 111G, and a common electrode 115 on the island-shaped layer 113G.
  • the light-emitting device 130B has a pixel electrode 111B on the insulating layer 235, an island-shaped layer 113B on the pixel electrode 111B, and a common electrode 115 on the island-shaped layer 113B.
  • Each of layer 113R, layer 113G, or layer 113B has at least a light-emitting layer.
  • light emitting device 130R may emit red (R) light
  • light emitting device 130G may emit green (G) light
  • light emitting device 130B may emit blue (B) light.
  • Layer 113R has a light-emitting layer that emits red light
  • layer 113G has a light-emitting layer that emits green light
  • layer 113B has a light-emitting layer that emits blue light.
  • layer 113R has a luminescent material that emits red light
  • layer 113G has a luminescent material that emits green light
  • layer 113B has a luminescent material that emits blue light.
  • Layer 113R, layer 113G, or layer 113B may each have one or more functional layers.
  • Functional layers include carrier injection layers (hole injection layer and electron injection layer), carrier transport layers (hole transport layer and electron transport layer), and carrier block layers (hole block layer and electron block layer).
  • the present invention is not limited to this.
  • Layers 113R, 113G, and 113B may have different thicknesses.
  • the layers 113R, 113G, and 113B can each be formed, for example, by vacuum deposition using a fine metal mask. In vacuum deposition using a fine metal mask, the layers 113R, 113G, and 113B can be formed in a wider range than the openings of the fine metal mask. Also, the end portions of the layers 113R, 113G, and 113B are tapered. Note that a sputtering method using a fine metal mask or an inkjet method may be used to form the layers 113R, 113G, and 113B.
  • a single structure (a structure having only one light emitting unit) or a tandem structure (a structure having a plurality of light emitting units) may be applied to the light emitting device of this embodiment.
  • the light-emitting unit has at least one light-emitting layer.
  • the layer 113R has a structure having a plurality of light-emitting units that emit red light
  • the layer 113G has a structure that has a plurality of light-emitting units that emit green light
  • the layer 113B has a structure having blue light-emitting units. It is preferable that the structure has a plurality of light-emitting units that emit light of .
  • a charge generating layer is preferably provided between each light emitting unit.
  • the common electrode 115 is shared by the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B.
  • the common electrode 115 is electrically connected to the conductive layer 123 provided in the connecting portion 140 .
  • the conductive layer 123 is preferably formed using the same material and in the same process as the pixel electrodes 111R, 111G, and 111B. It is preferable not to form the layers 113R, 113G, and 113B over the conductive layer 123 .
  • a common electrode 115 is provided on the conductive layer 123 in the connection portion 140 .
  • a sputtering method or a vacuum deposition method can be used for forming the common electrode 115.
  • a film formed by an evaporation method and a film formed by a sputtering method may be stacked.
  • a mask also referred to as an area mask or a rough metal mask to be distinguished from a fine metal mask
  • An insulating layer 218 provided over the transistors 205R, 205G, and 205B functions as a protective layer for the transistors 205R, 205G, and 205B.
  • the insulating layer 218 is preferably made of a material into which impurities are difficult to diffuse.
  • the insulating layer 218 functions as a blocking film that suppresses diffusion of impurities from the outside into the transistor. Impurities include, for example, water and hydrogen.
  • the insulating layer 218 can be an insulating layer having an inorganic material or an insulating layer having an organic material.
  • An inorganic material can be preferably used for the insulating layer 218 .
  • inorganic materials one or more of oxides, oxynitrides, nitride oxides, and nitrides can be used. More specifically, one or more of silicon nitride, silicon nitride oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, aluminum nitride, hafnium oxide, and hafnium aluminate can be used.
  • silicon oxynitride releases less impurities (for example, water and hydrogen) from itself and can function as a blocking film that suppresses the diffusion of impurities from above the transistor into the transistor.
  • 218 can be preferably used.
  • the organic material for example, one or more of acrylic resin and polyimide resin can be used.
  • a photosensitive material may be used as the organic material.
  • two or more of the insulating films described above may be laminated and used.
  • the insulating layer 218 may have a stacked-layer structure of an insulating layer containing an inorganic material and an insulating layer containing an organic material.
  • the property of blocking impurities can be improved.
  • an oxide semiconductor is used for the semiconductor layer 108
  • oxygen is released from the semiconductor layer 108, and oxygen vacancies (V 0 ) and V OH in the semiconductor layer 108 increase. It may happen.
  • the substrate temperature at the time of forming the insulating film is preferably 180° C. or higher and 450° C. or lower, more preferably 200° C. or higher and 450° C. or lower, further preferably 250° C. or higher and 450° C. or lower, further preferably 300° C. or higher and 450° C.
  • the transistor can have favorable electrical characteristics and high reliability.
  • the insulating layer 235 has a function of reducing unevenness caused by the transistors 205R, 205G, and 205B and making the surface on which the light emitting device 130 is formed flatter. Note that the insulating layer 235 is sometimes referred to as a planarization layer in this specification and the like.
  • An organic material can be suitably used for the insulating layer 235 .
  • a photosensitive organic resin for example, it is preferable to use a photosensitive resin composition containing an acrylic resin.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • the insulating layer 235 may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, or precursors of these resins. good. Also, the insulating layer 235 may be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. A photoresist may also be used as the photosensitive resin. As the photosensitive organic resin, either a positive material or a negative material may be used.
  • the insulating layer 235 may have a laminated structure of an organic insulating layer and an inorganic insulating layer.
  • the insulating layer 235 can have a stacked structure of an organic insulating layer and an inorganic insulating layer over the organic insulating layer.
  • an inorganic insulating layer on the outermost surface of the insulating layer 235, it can function as an etching protection layer. As a result, it is possible to prevent the insulating layer 235 from being partially etched when forming the pixel electrode 111 and lowering the flatness of the insulating layer 235 .
  • the flatness of the top surface of the insulating layer 235 which is the surface on which the light-emitting device 130 is formed, is low, for example, a connection failure due to a disconnection of the common electrode 115 or a local thinning of the common electrode 115 causes electrical resistance to decrease. may rise. Further, when the planarity of the top surface of the insulating layer 235 is low, the processing accuracy of layers formed over the insulating layer 235 may be low. By flattening the top surface of the insulating layer 235, the processing accuracy of the light-emitting device 130 and the like provided over the insulating layer 235 is increased, so that a display device with high definition can be obtained. In addition, it is possible to prevent connection failure due to disconnection of the common electrode 115 and increase in electric resistance due to local thinning of the thickness of the common electrode 115, so that a display device with high display quality can be obtained.
  • a part of the insulating layer 235 may be removed when forming the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B.
  • the insulating layer 235 may have recesses in regions that do not overlap with any of the pixel electrodes 111R, 111G, and 111B.
  • FIG. 18A shows an enlarged view of the light emitting device 130R, the transistor 205R, and the vicinity thereof.
  • the insulating layers 106 and 218 have openings 191 in regions overlapping with the conductive layer 112b included in the transistor 205R. In opening 191, conductive layer 112b is exposed.
  • the insulating layer 235 has an opening 193 in a region overlapping with the opening 191 .
  • a pixel electrode 111R is provided to cover the openings 191 and 193 .
  • the pixel electrode 111R has regions in contact with the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surface of the insulating layer 106, and the top surface of the conductive layer 112b.
  • Light emitting device 130R is electrically connected to transistor 205R through opening 191 and opening 193.
  • the position of the end of the insulating layer 106 on the side of the opening 191 and the position of the end of the insulating layer 218 on the side of the opening 191 match or approximately match, and the position of the end of the insulating layer 235 on the side of the opening 193 matches.
  • An example in which the positions of the ends of the insulating layer 218 on the opening 191 side are aligned or substantially aligned is shown, but one embodiment of the present invention is not limited to this.
  • the position of the end of the insulating layer 106 on the side of the opening 191 does not have to match the position of the end of the insulating layer 218 on the side of the opening 191 .
  • the position of the end of the insulating layer 235 on the side of the opening 193 and the position of the end of the insulating layer 218 on the side of the opening 191 do not have to match.
  • the end of the insulating layer 235 on the side of the opening 193 is preferably located inside the end of the insulating layer 218 on the side of the opening 191 . That is, it is preferable that the end portion of the insulating layer 235 on the opening 193 side be in contact with the upper surface of the insulating layer 218 . It can also be said that opening 193 encompasses opening 191 . With such a configuration, the coverage of the pixel electrode 111R can be improved.
  • the end of the insulating layer 106 on the side of the opening 191 may be located outside the end of the insulating layer 218 on the side of the opening 191 .
  • the pixel electrode 111G in the light emitting device 130G and the conductive layer 112b in the transistor 205G, and the pixel electrode 111B in the light emitting device 130B and the conductive layer 112b in the transistor 205B are the pixel electrode 111R in the light emitting device 130R and the conductive layer 112b in the transistor 205R. Since it is similar to , detailed description is omitted.
  • FIG. 17 and the like show a structure in which the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are each electrically connected to the conductive layer 112b
  • the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B may each be electrically connected to the conductive layer 112a.
  • the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B are electrically connected to the conductive layer 112a through openings provided in the insulating layers 110, 106, 218, and 235.
  • It can be configured as follows.
  • the structure of the pixel electrode that can be applied to the display device which is one embodiment of the present invention is not limited to the structure of the pixel electrode 111 illustrated in FIG. 17 and the like.
  • the insulating layer 237 covers the upper surface end portions of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B.
  • the insulating layer 237 functions as a partition wall (also called bank, bank, or spacer).
  • the insulating layer 237 can be an insulating layer with an inorganic material or an insulating layer with an organic material.
  • a material that can be used for the insulating layer 218 or a material that can be used for the insulating layer 235 can be used for the insulating layer 237 .
  • the insulating layer 237 may have a laminated structure of an inorganic insulating layer and an organic insulating layer.
  • the insulating layer 237 By providing the insulating layer 237, it is possible to prevent the pixel electrode 111 and the common electrode 115 from coming into contact with each other, thereby preventing the light emitting device 130 from short-circuiting.
  • the ends of the insulating layer 237 are preferably tapered. By tapering the end portion of the insulating layer 237, coverage with a film to be formed later can be improved. In particular, it is preferable to use a photosensitive material for the organic insulating layer because the shape of the end portion can be easily controlled by the conditions of exposure and development.
  • an inorganic insulating layer may be used as the insulating layer 237 . By using an inorganic insulating layer for the insulating layer 237, a high-definition display device can be obtained.
  • the insulating layer 237 can be formed by applying a composition containing an organic material by a spin coating method and then selectively exposing and developing the composition. can.
  • a photosensitive organic material a positive photosensitive resin may be used, or a negative photosensitive resin may be used.
  • Light used for exposure preferably includes i-line. Also, the light used for exposure may include at least one of g-line and h-line. The width of the opening can be controlled by adjusting the exposure amount.
  • a sputtering method, an evaporation method, a droplet discharge method (inkjet method), screen printing, or offset printing may be used.
  • a concave portion is formed in the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B so as to cover the openings of the insulating layer 106, the insulating layer 218, and the insulating layer 235.
  • An insulating layer 237 is embedded in the recess. For example, after forming the insulating layer 237 covering the upper surface end portion of the pixel electrode 111 and the opening, the island-shaped layers 113R, 113G, and 113B can be formed using a fine metal mask.
  • a layer 113R, a layer 113G, and a layer 113B may be provided on the insulating layer 237.
  • FIG. 17 illustrates a structure in which adjacent layers 113 are not in contact with each other; however, one embodiment of the present invention is not limited to this.
  • Adjacent layers 113 may be in contact on the insulating layer 237 .
  • adjacent layers 113 may overlap on the insulating layer 237 .
  • the layers 113R and 113G may be in contact with each other, or the layers 113R and 113G may overlap each other.
  • insulating layer 237 can also be applied to other configuration examples.
  • a protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B.
  • the protective layer 131 and the substrate 152 are adhered via the adhesive layer 142 .
  • a light shielding layer 117 is provided on the substrate 152 .
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to sealing the light-emitting device.
  • the space between substrates 152 and 151 is filled with an adhesive layer 142 to apply a solid sealing structure.
  • the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.
  • the adhesive layer 142 may be provided so as not to overlap the light emitting device.
  • the space may be filled with a resin different from the adhesive layer 142 provided in a frame shape.
  • a protective layer 131 is preferably provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B.
  • the protective layer 131 may have a single layer structure or a laminated structure of two or more layers. The conductivity of the protective layer 131 does not matter. At least one of an insulating layer, a semiconductor layer, and a conductive layer can be used for the protective layer 131 .
  • Protective layer 131 can use, for example, one or more of oxides, oxynitrides, nitrided oxides, or nitrides. Specific examples include silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and hafnium oxide.
  • the protective layer 131 preferably comprises a nitride or nitrided oxide, more preferably a nitride.
  • a layer containing In--Sn oxide (ITO), In--Zn oxide, Ga--Zn oxide, Al--Zn oxide, or In--Ga--Zn oxide (IGZO) is used for the protective layer 131.
  • the layer preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115 .
  • the layer may further contain nitrogen.
  • the protective layer 131 When the light emitted from the light-emitting device is taken out through the protective layer 131, the protective layer 131 preferably has high transparency to visible light.
  • the protective layer 131 preferably has high transparency to visible light.
  • In--Sn oxide, In--Ga--Zn oxide, and aluminum oxide are each preferable because they have high visible light transmittance.
  • the protective layer 131 may have an organic film.
  • protective layer 131 may have both an organic film and an inorganic film.
  • Examples of film formation methods for the protective layer 131 include a vacuum deposition method, a sputtering method, a CVD method, and an ALD method.
  • the protective layer 131 may have a laminated structure formed using a different film formation method.
  • the protective layer 131 is provided at least on the display section 162 and is preferably provided so as to cover the entire display section 162 .
  • the protective layer 131 is preferably provided so as to cover not only the display portion 162 but also the connection portion 140 and the circuit 164 . Moreover, it is preferable that the protective layer 131 is provided up to the end portion of the display device 200A.
  • a connecting portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap.
  • the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connecting layer 242 .
  • the conductive layer 166 can be formed in the same process as the pixel electrodes 111R, 111G, and 111B.
  • the conductive layer 166 is exposed on the upper surface of the connecting portion 204 . Thereby, the connecting portion 204 and the FPC 172 can be electrically connected via the connecting layer 242 .
  • connection layer 242 for example, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • the connecting portion 204 has a portion where the protective layer 131 is not provided in order to electrically connect the FPC 172 and the conductive layer 166 .
  • the conductive layer 166 can be exposed by removing a region of the protective layer 131 overlapping the conductive layer 166 using a mask.
  • a laminated structure of at least one organic layer and a conductive layer may be provided on the conductive layer 166, and the protective layer 131 may be provided on the laminated structure. Then, using a laser or a sharp edged tool (e.g., a needle or a cutter) on the laminated structure, a peeling starting point (a portion that triggers peeling) is formed, and the laminated structure and the protective layer thereon are formed. 131 may be selectively removed to expose conductive layer 166 .
  • the protective layer 131 can be selectively removed by pressing an adhesive roller against the substrate 151 and relatively moving the roller while rotating. Alternatively, an adhesive tape may be attached to the substrate 151 and removed.
  • the adhesion between the organic layer and the conductive layer or the adhesion between the organic layers is low, separation occurs at the interface between the organic layer and the conductive layer or within the organic layer. Accordingly, a region of the protective layer 131 overlapping with the conductive layer 166 can be selectively removed. Note that when an organic layer or the like remains over the conductive layer 166, it can be removed with an organic solvent or the like.
  • the organic layer for example, at least one organic layer (a layer that functions as a light-emitting layer, a carrier block layer, a carrier transport layer, or a carrier injection layer) used for any of the layers 113B, 113G, and 113R is used. can be done.
  • the organic layer may be formed when any one of the layers 113B, 113G, and 113R is formed, or may be provided separately.
  • the conductive layer can be formed using the same process and the same material as the common electrode 115 .
  • an ITO film is preferably formed as the common electrode 115 and the conductive layer. Note that in the case where the common electrode 115 has a stacked-layer structure, at least one of the layers forming the common electrode 115 is provided as a conductive layer.
  • the upper surface of the conductive layer 166 may be covered with a mask so that the protective layer 131 is not formed on the conductive layer 166 .
  • a mask for example, a metal mask (area metal mask) may be used, or an adhesive or adsorptive tape or film may be used.
  • connection portion 204 a region where the protective layer 131 is not provided is formed in the connection portion 204, and the conductive layer 166 and the FPC 172 can be electrically connected through the connection layer 242 in this region. .
  • a conductive layer 123 is provided on the insulating layer 235 in the connecting portion 140 .
  • the ends of the conductive layer 123 are covered with an insulating layer 237 .
  • a common electrode 115 is provided over the conductive layer 123 .
  • a display device 200A shown in FIG. 17 is of a top emission type. Light emitted by the light emitting device is emitted to the substrate 152 side. A material having high visible light transmittance is preferably used for the substrate 152 .
  • the pixel electrode 111 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.
  • FIG. 17 shows the light R, the light G, and the light B emitted from the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B toward the substrate 152 by dashed arrows.
  • a light shielding layer 117 is preferably provided on the surface of the substrate 152 on the substrate 151 side.
  • a light shielding layer 117 can be provided between adjacent light emitting devices, on the connections 140 and on the circuitry 164 .
  • By providing the light shielding layer 117 light emitted from adjacent sub-pixels is blocked and color mixture can be prevented.
  • external light can be suppressed from reaching the transistors 201, 205R, 205G, and 205B, and deterioration of the transistors 201, 205R, 205G, and 205B can be suppressed. Note that a structure in which the light shielding layer 117 is not provided may be employed.
  • optical members can be arranged outside the substrate 152 .
  • optical members include polarizing plates, retardation plates, light diffusion layers (eg, diffusion films), antireflection layers, and light-condensing films.
  • an antistatic film that suppresses adhesion of dust e.g., a water-repellent film that prevents adhesion of dirt, a hard coat film that suppresses the occurrence of scratches due to use, a shock absorption layer, etc. Layers may be arranged.
  • DLC diamond-like carbon
  • AlO x aluminum oxide
  • polyester-based material polycarbonate-based material, or the like
  • a material having a high visible light transmittance is preferably used for the surface protective layer.
  • a material that can be used for the substrate 102 can be used for each of the substrates 151 and 152 .
  • a material that transmits the light is used for the substrate on the side from which the light from the light-emitting device is extracted.
  • a polarizing plate may also be used as the substrate on the side from which light from the light-emitting device is extracted.
  • the substrates 151 and 152 are made of, for example, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, acrylic resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyether resins.
  • polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN)
  • PET polyethylene naphthalate
  • polyacrylonitrile resins acrylic resins
  • polyimide resins polyimide resins
  • polymethyl methacrylate resins polycarbonate (PC) resins
  • PC polycarbonate
  • polyether resins polyether resins
  • Sulfone (PES) resin polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofibers can be used.
  • PES polyamide resin
  • aramid polysiloxane resin
  • polystyrene resin polyamideimide resin
  • polyurethane resin polyvinyl chloride resin
  • polyvinylidene chloride resin polypropylene resin
  • PTFE polytetrafluoroethylene
  • ABS resin polytetrafluoroethylene
  • a substrate having high optical isotropy has small birefringence (it can be said that the amount of birefringence is small).
  • the absolute value of the retardation (retardation) value of the substrate with high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.
  • Films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.
  • TAC triacetylcellulose
  • COP cycloolefin polymer
  • COC cycloolefin copolymer
  • a film having a low water absorption rate as the substrate.
  • various curable adhesives such as photocurable adhesives such as ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used.
  • These adhesives include epoxy resins, acrylic resins, silicone resins, phenol resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, and the like.
  • a material with low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • a display device 200B shown in FIG. 19 is mainly different from the display device 200A shown in FIG. 17 in that the configurations of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B are different.
  • the light emitting device 130R has a layer 113W instead of the layer 113R.
  • Light emitting device 130G has layer 113W instead of layer 113G.
  • Light emitting device 130B has layer 113W instead of layer 113B.
  • Layer 113W may be configured to emit white light, for example.
  • the formation of the layer 113W can use, for example, a vacuum deposition method or a sputtering method.
  • Layer 113W may be a structure shared by light emitting device 130R, light emitting device 130G, and light emitting device 130B. By sharing the layer 113W with a plurality of light emitting devices 130, the layer 113W can be formed without using a fine metal mask.
  • the layer 113W is provided on the display portion 162 .
  • An area mask for example, can be used to form the layer 113W.
  • An optical adjustment layer (not shown) may be provided between the pixel electrode 111 and the layer 113 .
  • a conductive layer having transparency to visible light can be used as the optical adjustment layer.
  • the film thickness of the optical adjustment layer may be different between the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. It is preferable to adjust the film thickness of the optical adjustment layer so that the light emitted from the light emitting device 130 has an optical path length that intensifies. As a result, even when the layer 113W that emits white light is used, it is possible to obtain intensified light of a desired wavelength from the light emitting device 130 .
  • a colored layer 132R transmitting red light, a colored layer 132G transmitting green light, and a colored layer 132B transmitting blue light may be provided on the surface of the substrate 152 on the adhesive layer 142 side.
  • the colored layer 132R is provided in a region overlapping with the light emitting device 130R.
  • the colored layer 132G is provided in a region overlapping with the light emitting device 130G.
  • the colored layer 132B is provided in a region overlapping with the light emitting device 130B.
  • the colored layer 132R can shield light of unnecessary wavelengths emitted from the red light emitting device 130R. With such a configuration, the color purity of light emitted from each light emitting device can be enhanced.
  • a combination of the light-emitting device 130G and the colored layer 132G and a combination of the light-emitting device 130B and the colored layer 132B have similar effects.
  • the colored layer 132R, the colored layer 132G, and the colored layer 132B can also be applied to other configuration examples.
  • the display device 200A differs from the display device 200A shown in FIG. 17 mainly in that the top surface and side surfaces are covered and that the common layer 114, the insulating layer 125 and the insulating layer 127 are provided.
  • the light-emitting device 130R includes a pixel electrode 111R on the insulating layer 235, an island-shaped layer 113R on the pixel electrode 111R, a common layer 114 on the island-shaped layer 113R, and a common electrode 115 on the common layer 114. have.
  • layer 113R and common layer 114 can be collectively referred to as EL layers.
  • the light-emitting device 130G includes a pixel electrode 111G on the insulating layer 235, an island-shaped layer 113G on the pixel electrode 111G, a common layer 114 on the island-shaped layer 113G, and a common electrode 115 on the common layer 114. have.
  • layer 113G and common layer 114 can be collectively referred to as EL layers.
  • the light-emitting device 130B includes a pixel electrode 111B on the insulating layer 235, an island-shaped layer 113B on the pixel electrode 111B, a common layer 114 on the island-shaped layer 113B, and a common electrode 115 on the common layer 114. have.
  • layer 113B and common layer 114 can be collectively referred to as EL layers.
  • a layer provided in an island shape for each light-emitting device is indicated as a layer 113R, a layer 113G, or a layer 113B, and a layer shared by a plurality of light-emitting devices is indicated. Shown as common layer 114 .
  • the layers 113R, 113G, and 113B, excluding the common layer 114 may be referred to as an island-shaped EL layer, an island-shaped EL layer, or the like.
  • the layers 113R, 113G, and 113B may each have a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in this order. Moreover, you may have an electron block layer between a hole transport layer and a light emitting layer. Moreover, you may have a hole blocking layer between an electron carrying layer and a light emitting layer. Moreover, you may have an electron injection layer on an electron carrying layer.
  • the layers 113R, 113G, and 113B may each have an electron injection layer, an electron transport layer, a light emitting layer, and a hole transport layer in this order. Moreover, you may have a hole blocking layer between an electron carrying layer and a light emitting layer. Moreover, you may have an electron block layer between a hole transport layer and a light emitting layer. Also, a hole injection layer may be provided on the hole transport layer.
  • each of the layers 113R, 113G, and 113B preferably has a light-emitting layer and a carrier-transporting layer (electron-transporting layer or hole-transporting layer) on the light-emitting layer.
  • the layers 113R, 113G, and 113B each preferably have a light emitting layer and a carrier blocking layer (hole blocking layer or electron blocking layer) over the light emitting layer.
  • the layers 113R, 113G, and 113B each preferably have a light emitting layer, a carrier blocking layer over the light emitting layer, and a carrier transport layer over the carrier blocking layer.
  • a tandem structure may be applied to the light emitting device 130R, the light emitting device 130G, and the light emitting device 130G.
  • the layer 113R has a structure having a plurality of light-emitting units that emit red light
  • the layer 113G has a structure that has a plurality of light-emitting units that emit green light
  • the layer 113B has a structure that has a plurality of light-emitting units that emit blue light. It is preferable that the structure has a plurality of light-emitting units that emit .
  • a charge generating layer is preferably provided between each light emitting unit. Layers 113R, 113G, and 113B may, for example, have a first light emitting unit, a charge generating layer on the first light emitting unit, and a second light emitting unit on the charge generating layer. .
  • the second light-emitting unit preferably has a light-emitting layer and a carrier-transporting layer (electron-transporting layer or hole-transporting layer) on the light-emitting layer.
  • the second light emitting unit preferably has a light emitting layer and a carrier blocking layer (hole blocking layer or electron blocking layer) on the light emitting layer.
  • the second light-emitting unit preferably has a light-emitting layer, a carrier-blocking layer on the light-emitting layer, and a carrier-transporting layer on the carrier-blocking layer.
  • the light-emitting unit provided in the uppermost layer preferably has a light-emitting layer and one or both of a carrier transport layer and a carrier block layer over the light-emitting layer.
  • the common layer 114 has, for example, an electron injection layer or a hole injection layer.
  • the common layer 114 may have a laminate of an electron transport layer and an electron injection layer, or may have a laminate of a hole transport layer and a hole injection layer.
  • Common layer 114 is shared by light emitting device 130R, light emitting device 130G, and light emitting device 130B.
  • a vapor deposition method including a vacuum vapor deposition method
  • a transfer method a printing method, an inkjet method, or a coating method can be used.
  • the common layer 114 may not be provided in the connecting portion 140 .
  • 20 shows a structure in which the common electrode 115 is provided over the conductive layer 123.
  • the common layer 114 may be provided over the conductive layer 123 and the conductive layer 123 and the common electrode 115 may be electrically connected to each other through the common layer 114 .
  • the areas where the common layer 114 and the common electrode 115 are deposited can be changed.
  • FIG. 21A shows an enlarged view of the light emitting device 130R, the transistor 205R, and the vicinity thereof.
  • the pixel electrode 111R of the light emitting device 130R has a laminated structure of a conductive layer 124R, a conductive layer 126R on the conductive layer 124R, and a conductive layer 129R on the conductive layer 126R.
  • the conductive layer 124R is electrically connected to the conductive layer 112b of the transistor 205R through the openings 191 and 193 provided in the insulating layers 106, 218, and 235.
  • the end of the conductive layer 124R is positioned outside the end of the conductive layer 126R.
  • the end of the conductive layer 126R is located inside the end of the conductive layer 129R.
  • the end of the conductive layer 124R is located inside the end of the conductive layer 129R. That is, the end of the conductive layer 126R is located on the conductive layer 124R. Also, the end of the conductive layer 129R is located on the conductive layer 124R.
  • the top and side surfaces of the conductive layer 126R are covered with a conductive layer 129R.
  • the conductive layer 124R is not particularly limited in its transparency and reflectivity to visible light.
  • a conductive layer that transmits visible light or a conductive layer that reflects visible light can be used as the conductive layer 124R.
  • a conductive layer that transmits visible light a conductive layer containing an oxide conductor (also referred to as an oxide conductive layer) can be used, for example.
  • an In--Si--Sn oxide also referred to as ITSO
  • ITSO In--Si--Sn oxide
  • the conductive layer 124R may have a layered structure of a conductive layer that transmits visible light and a reflective conductive layer over the conductive layer.
  • a material with high adhesion to the formation surface of the conductive layer 124R here, the insulating layer 235. Thereby, film peeling of the conductive layer 124R can be suppressed.
  • a conductive layer reflective to visible light can be used for the conductive layer 126R.
  • the conductive layer 126R may have a layered structure of a conductive layer that transmits visible light and a reflective conductive layer over the conductive layer.
  • a material that can be applied to the conductive layer 124R can be applied to the conductive layer 126R.
  • a laminated structure of In—Si—Sn oxide (ITSO) and an alloy of silver, palladium, and copper (APC) on the In—Si—Sn oxide (ITSO) is preferably used as the conductive layer 126R. be able to.
  • a material that can be applied to the conductive layer 124R can be applied to the conductive layer 129R.
  • a conductive layer that is transparent to visible light can be used.
  • In--Si--Sn oxide (ITSO) can be used as the conductive layer 129R.
  • the conductive layer 126R When a material that is easily oxidized is used for the conductive layer 126R, it is possible to suppress oxidation of the conductive layer 126R by applying a material that is difficult to be oxidized for the conductive layer 129R and covering the conductive layer 126R with the conductive layer 129R. In addition, it is possible to suppress deposition of metal components contained in the conductive layer 126R. For example, when a material containing silver is used for the conductive layer 126R, an In--Si--Sn oxide (ITSO) can be preferably used for the conductive layer 129R. Thereby, it is possible to suppress the oxidation of the conductive layer 126R and suppress the deposition of silver.
  • ITSO In--Si--Sn oxide
  • conductive layers 124G, 126G, and 129G in light emitting device 130G and conductive layers 124B, 126B, and 129B in light emitting device 130B conductive layers 124R, 126R, and 126R in light emitting device 130R. Since it is the same as the conductive layer 129R, detailed description is omitted.
  • the conductive layer 123 can have a stacked-layer structure of, for example, a conductive layer 124p, a conductive layer 126p over the conductive layer 124p, and a conductive layer 129p over the conductive layer 126p.
  • the conductive layer 124p can be formed in the same step as the conductive layers 124R, 124G, and 124B.
  • the conductive layer 126p can be formed in the same step as the conductive layers 126R, 126G, and 126B.
  • the conductive layer 129p can be formed in the same step as the conductive layers 129R, 129G, and 129B.
  • the conductive layer 166 can have a stacked structure of, for example, a conductive layer 124q, a conductive layer 126q over the conductive layer 124q, and a conductive layer 129q over the conductive layer 126q.
  • the conductive layer 124q can be formed in the same step as the conductive layers 124R, 124G, and 124B.
  • the conductive layer 126q can be formed in the same step as the conductive layers 126R, 126G, and 126B.
  • the conductive layer 129q can be formed in the same step as the conductive layers 129R, 129G, and 129B.
  • FIG. 20 and the like show a configuration in which the thicknesses of the conductive layers 129p and 129q are different from the thicknesses of the conductive layers 129R, 129G, and 129B.
  • the thickness of the conductive layer 129p, the conductive layer 129q, the conductive layer 129R, the conductive layer 129G, and the conductive layer 129B may be varied according to the resistivity of the materials used. In the case where the thicknesses of the conductive layers 129p and 129q are different, the conductive layers 129R, 129G, and 129B may be formed in different steps.
  • part of the step of forming the conductive layers 129p and 129q and the step of forming the conductive layers 129R, 129G, and 129B may be shared. Further, the thickness of the conductive layer 129p and the thickness of the conductive layer 129q may be different.
  • the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 123, and the conductive layer 166 shown in FIG. 20 and the like can also be applied to other configuration examples.
  • recesses are formed so as to cover the openings provided in the insulating layer 106, the insulating layer 218, and the insulating layer 235.
  • a layer 128 is embedded in the recess.
  • the layer 128 has a function of flattening recesses of the conductive layers 124R, 124G, 124B, and 124q.
  • a layer 126G, a conductive layer 126B, and a conductive layer 126q are provided. Therefore, in the light-emitting device 130, regions overlapping the recesses of the conductive layers 124R, 124G, and 124B also function as light-emitting regions, and the aperture ratio of pixels can be increased.
  • the layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for layer 128 .
  • Layer 128 is preferably formed using an organic material. It is particularly preferable to use a photosensitive organic resin as the organic material.
  • a photosensitive resin composition containing acrylic resin can be suitably used for the layer 128, for example.
  • the layer 128 when the layer 128 is a conductive layer, the layer 128 can function as part of the pixel electrode.
  • the 20 and 21A show an example in which the edge of the layer 113R is located outside the edge of the pixel electrode 111R.
  • the layer 113R is formed to cover the edge of the pixel electrode 111R.
  • the entire upper surface of the pixel electrode can be used as a light-emitting region, and the edge of the island-shaped EL layer is located inside the edge of the pixel electrode. rate can be increased.
  • by covering the side surface of the pixel electrode 111 with the EL layer contact between the pixel electrode 111 and the common electrode 115 can be suppressed, so short-circuiting of the light emitting device 130 can be suppressed.
  • the pixel electrode 111R and the layer 113R are described here as an example, the same applies to the pixel electrode 111G and the layer 113G and the pixel electrode 111B and the layer 113B.
  • the insulating layer 237 in FIG. 17 there is no insulating layer (see the insulating layer 237 in FIG. 17) covering the edge of the upper surface of the pixel electrode 111R.
  • no insulating layer is provided between the pixel electrode 111G and the layer 113G to cover the edge of the upper surface of the pixel electrode 111G. Therefore, the interval between adjacent light emitting devices can be reduced. Therefore, a high-definition or high-resolution display device can be obtained.
  • a mask for forming the insulating layer is not required, and the manufacturing cost of the display device can be reduced.
  • the EL layer can be formed using, for example, photolithography. Specifically, after forming a pixel electrode for each sub-pixel, a film serving as a light-emitting layer is formed over a plurality of pixel electrodes. After that, the film is processed using a photolithographic method to form one island-shaped light-emitting layer for one pixel electrode. Thereby, the light-emitting layer is divided for each sub-pixel, and an island-shaped light-emitting layer can be formed for each sub-pixel. By using a photolithography method, a fine-sized EL layer can be formed. By providing an island-shaped EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. As a result, unintended light emission due to crosstalk can be prevented, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low luminance can be realized.
  • the heat resistance temperature of the compounds contained in the layers 113R, 113G, and 113B is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. preferable.
  • the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.
  • FIG. 20 shows a plurality of cross sections of the insulating layer 125 and the insulating layer 127, when the display device 200C is viewed from above, the insulating layer 125 and the insulating layer 127 are each connected to one. That is, the display device 200C can be configured to have one insulating layer 125 and one insulating layer 127, for example.
  • the display device 200C may have a plurality of insulating layers 125 separated from each other, and may have a plurality of insulating layers 127 separated from each other.
  • the insulating layer 125 is preferably in contact with the side surfaces of the layers 113R, 113G, and 113B. With the structure in which the insulating layer 125 is in contact with the layers 113R, 113G, and 113B, peeling of the layers 113R, 113G, and 113B can be prevented. Adhesion between the insulating layer and the layer 113B, the layer 113G, or the layer 113R has the effect of fixing or adhering the adjacent layer 113B or the like by the insulating layer. This can improve the reliability of the light emitting device. Moreover, the production yield of the light-emitting device can be increased.
  • An inorganic material can be used for the insulating layer 125 .
  • the insulating layer 125 can use one or more of oxides, oxynitrides, nitride oxides, and nitrides, for example.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • Oxides include silicon oxide, aluminum oxide, magnesium oxide, indium gallium zinc oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide.
  • Nitrides include silicon nitride and aluminum nitride.
  • Oxynitrides include silicon oxynitride and aluminum oxynitride.
  • Nitride oxides include silicon oxynitride and aluminum oxynitride.
  • aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting
  • the insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. Further, the insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. Further, the insulating layer 125 preferably has a function of capturing or fixing at least one of water and oxygen (also referred to as gettering).
  • a barrier insulating layer refers to an insulating layer having a barrier property.
  • the term "barrier property" refers to a function of suppressing diffusion of a corresponding substance (also referred to as low permeability).
  • the insulating layer 125 has a function as a barrier insulating layer or a gettering function to suppress entry of impurities (typically, at least one of water and oxygen) that can diffuse into each light-emitting device from the outside. is possible. With such a structure, a highly reliable light-emitting device and a highly reliable display device can be provided.
  • impurities typically, at least one of water and oxygen
  • the insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125 .
  • the insulating layer 127 can overlap with part of the top surface and side surfaces of the layers 113R, 113G, and 113B with the insulating layer 125 interposed therebetween.
  • the insulating layer 127 preferably covers at least part of the side surface of the insulating layer 125 .
  • the top surface of the insulating layer 127 preferably has a highly flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion.
  • An insulating layer containing an organic material can be suitably used as the insulating layer 127 .
  • the organic material it is preferable to use a photosensitive organic resin, for example, it is preferable to use a photosensitive resin composition containing an acrylic resin.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • Acrylic resin polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins may be used as the insulating layer 127. good.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127 .
  • a photoresist may also be used as the photosensitive resin.
  • the photosensitive organic resin either a positive material or a negative material may be used.
  • a material that absorbs visible light may be used for the insulating layer 127 . Since the insulating layer 127 absorbs light emitted from the light emitting device, leakage of light (stray light) from the light emitting device to an adjacent light emitting device via the insulating layer 127 can be suppressed. Thereby, the display quality of the display device can be improved. In addition, since the display quality can be improved without using a polarizing plate for the display device, the weight and thickness of the display device can be reduced.
  • Materials that absorb visible light include materials containing pigments such as black, materials containing dyes, light-absorbing resin materials (e.g., polyimide), and resin materials that can be used for color filters (color filter materials). is mentioned.
  • resin material obtained by laminating or mixing color filter materials of two colors or three or more colors, because the effect of shielding visible light can be enhanced.
  • color filter materials it is possible to obtain a black or nearly black resin layer.
  • Mask layers 118R and 119R are located on layer 113R of light emitting device 130R, mask layers 118G and 119G are located on layer 113G of light emitting device 130G, and layer 113B of light emitting device 130B is located. , mask layer 118B and mask layer 119B are located. Mask layers 118 and 119 are provided to surround the light emitting region. In other words, the mask layer has openings in portions overlapping the light emitting regions. The mask layer 118R and the mask layer 119R are part of the remaining mask layer provided on the layer 113R when forming the layer 113R.
  • the mask layers 118G and 119G are part of the mask layers that were provided when the layer 113G was formed, and the mask layers 118B and 119B are part of the mask layers that were provided when the layer 113B was formed. .
  • part of the mask layer used to protect the EL layer may remain during manufacturing.
  • the common layer 114 and the common electrode 115 are provided on the layers 113R, 113G, 113B, the mask layers 118, 119, the insulating layers 125 and 127.
  • a region where the pixel electrode and the island-shaped EL layer are provided, a region where the pixel electrode and the island-shaped EL layer are not provided (region between the light emitting devices) There is a step due to Since the display device of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127 , the step can be reduced, and coverage with the common layer 114 and the common electrode 115 can be improved. Therefore, it is possible to suppress poor connection due to disconnection. In addition, it is possible to prevent the film thickness of the common electrode 115 from locally thinning due to the steps, and the increase in electrical resistance.
  • the insulating layer 127 includes at least the side surfaces of the insulating layer 125, the mask layer 118R, the mask layer 119R, the mask layer 118G, the mask layer 119G, the mask layer 118B, and the mask layer 119B. You can partially cover it. In addition, the insulating layer 127 may have regions in contact with the layers 113R, 113G, and 113B.
  • FIGS. 22A and 22B A configuration example different from the pixel electrode 111R shown in FIG. 21A and the like is shown in FIGS. 22A and 22B.
  • the ends of the conductive layer 129R, the conductive layer 126R, and the conductive layer 124R are aligned or substantially aligned.
  • the layer 113R contacts the sides of the conductive layer 129R, the sides of the conductive layer 126R, and the sides of the conductive layer 124R.
  • a resist mask is formed on the substrate, and the first conductive film, the second conductive film, and the third conductive film are processed using the resist mask to form the conductive layer 124R, the conductive layer 126R, and the conductive layer 129R. can do.
  • the process can be simplified. .
  • the side surface of the conductive layer 124R and the upper and side surfaces of the conductive layer 126R are covered with the conductive layer 129R.
  • the edges of the conductive layer 124R and the edges of the conductive layer 126R are aligned or substantially aligned with each other.
  • Layer 113R contacts the top and side surfaces of conductive layer 129R.
  • a resist mask is formed over the second conductive film, and the resist mask is used.
  • a conductive layer 124R and a conductive layer 126R are formed by processing the first conductive film and the second conductive film.
  • a third conductive film to be the conductive layer 129R is formed so as to cover the conductive layers 124R and 126R, and the third conductive film is processed, whereby the conductive layer 129R can be formed. .
  • the process can be simplified. Further, even when a material that is easily diffused, such as silver, is applied to the conductive layer 124R or the conductive layer 126R, diffusion can be suppressed by covering the top surface and side surfaces of the conductive layer 124R and the conductive layer 126R with the conductive layer 129R. .
  • FIG. 22A and the like show a configuration in which the upper surface of the layer 128 has a shape in which the center and the vicinity thereof are swollen in a cross-sectional view, that is, a shape having a convex curved surface, but the shape of the layer 128 is not particularly limited.
  • the upper surface of the layer 128 can be configured to have a shape in which the center and the vicinity thereof are depressed in a cross-sectional view, that is, a shape having a concave curved surface.
  • the top surface of layer 128 may have one or both of convex and concave surfaces.
  • the number of convex curved surfaces and concave curved surfaces that the upper surface of the layer 128 has is not limited, and may be one or more.
  • the height of the top surface of the layer 128 and the height of the top surface of the conductive layer 124R may match or substantially match, or may differ from each other.
  • the height of the top surface of layer 128 may be lower or higher than the height of the top surface of conductive layer 124R.
  • pixel electrode 111 shown in FIGS. 21A, 22A, and 22B can also be applied to other configuration examples.
  • a display device 200D shown in FIG. 23 is mainly different from the display device 200C shown in FIG. 20 in that an insulating layer 239 is included.
  • the insulating layer 239 is provided on the insulating layer 235 and has an opening in a region overlapping with the opening of the insulating layer 235 .
  • the pixel electrode 111 is provided so as to cover openings provided in the insulating layer 239 , the insulating layer 235 , the insulating layer 218 , and the insulating layer 106 .
  • the insulating layer 239 can function as an etching protection film when forming the layer 113 .
  • the insulating layer 235 can be prevented from being partially etched when the layer 113 is formed, and the insulating layer 235 can be prevented from becoming uneven. In other words, the steps on the surface on which the insulating layer 125 is formed are reduced, and the coverage of the insulating layer 125 can be improved. Therefore, the side surface of the layer 113 is covered with the insulating layer 125, and peeling of the layer 113 can be prevented.
  • the insulating layer 239 can be an insulating layer containing an inorganic material.
  • oxides include silicon oxide, aluminum oxide, magnesium oxide, indium gallium zinc oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, and tantalum oxide.
  • Nitrides include silicon nitride and aluminum nitride.
  • oxynitride examples include silicon oxynitride, aluminum oxynitride, and the like. Silicon oxynitride, aluminum oxynitride, and the like can be given as the oxynitride. Silicon oxide or silicon oxynitride can be preferably used for the insulating layer 239, for example.
  • the insulating layer 239 it is preferable to select a material that has a high etching rate ratio (also referred to as a high selection ratio) to the film to be used as the layer 113 when the film is etched.
  • a material that has a high etching rate ratio also referred to as a high selection ratio
  • the flatness of the surface on which the light-emitting device 130 is formed is low, for example, there is a case where the common electrode 115 is poorly connected due to step disconnection, or the thickness of the common electrode 115 is locally thinned, and the electrical resistance is increased. be. In addition, the processing accuracy of the layer formed on the formation surface may be lowered.
  • the surface on which the light-emitting device 130 is formed can be made flatter. Therefore, the processing accuracy of the light-emitting device 130 and the like provided over the insulating layer 239 is improved, and the display device can have high definition. In addition, it is possible to prevent connection failure due to disconnection of the common electrode 115 and increase in electric resistance due to local thinning of the thickness of the common electrode 115, so that a display device with high display quality can be obtained.
  • the insulating layer 239 has a single-layer structure in FIG. 23, one embodiment of the present invention is not limited to this.
  • the insulating layer 239 may have a laminated structure.
  • a portion of the insulating layer 239 may be removed in a region that does not overlap with any of the layers 113R, 113G, and 113B.
  • the thickness of the insulating layer 239 in a region that overlaps none of the layers 113R, 113G, and 113B may be thinner than the thickness of the insulating layer 239 in a region that overlaps with the layer 113R, the layer 113G, or the layer 113B.
  • insulating layer 239 can also be applied to other configuration examples.
  • a display device 200E shown in FIG. 24 is mainly different from the display device 200D shown in FIG. 23 in that it is a bottom emission type display device.
  • the light emitted by the light emitting device is emitted to the substrate 151 side.
  • a material having high visible light transmittance is preferably used for the substrate 151 .
  • the material used for the substrate 152 may or may not be translucent.
  • a light shielding layer 117 is preferably formed between the substrate 151 and the transistor 201 and between the substrate 151 and the transistor 205 .
  • 24 shows an example in which the light-blocking layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-blocking layer 117, and the transistor 201, the transistor 205R, and the transistor 205G are provided over the insulating layer 153.
  • FIG. 24 shows an example in which the light-blocking layer 117 is provided over the substrate 151, the insulating layer 153 is provided over the light-blocking layer 117, and the transistor 201, the transistor 205R, and the transistor 205G are provided over the insulating layer 153.
  • the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B each use a material with high transparency to visible light.
  • a material that reflects visible light is preferably used for the common electrode 115 .
  • a display device 200F shown in FIG. 25 is mainly different from the display device 200D shown in FIG. 23 in that a light receiving device 150 is provided.
  • a pn-type or pin-type photodiode can be used as the light receiving device 150 .
  • the light receiving device 150 functions as a photoelectric conversion device (also referred to as a photoelectric conversion element) that detects light incident on the light receiving device 150 and generates charges. The amount of charge generated from the light receiving device 150 is determined based on the amount of light incident on the light receiving device 150 .
  • the light receiving device 150 can detect one or both of visible light and infrared light.
  • visible light for example, one or more of colors such as blue, purple, violet, green, yellow-green, yellow, orange, and red can be detected.
  • infrared light it is possible to detect an object even in a dark place, which is preferable.
  • organic photodiode having a layer containing an organic compound as the light receiving device 150 .
  • Organic photodiodes can be easily made thinner, lighter, and larger, and have a high degree of freedom in shape and design, so that they can be applied to various display devices.
  • an organic EL device is used as the light emitting device 130 and an organic photodiode is used as the light receiving device 150 .
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • the light-receiving device 150 is driven by applying a reverse bias between the pixel electrode and the common electrode, thereby detecting light incident on the light-receiving device, generating an electric charge, and extracting it as a current.
  • FIG. 25 shows the light G and light B emitted from the light emitting device 130G and the light emitting device 130B to the substrate 152 side, and the light Lin incident on the light receiving device 150 from the substrate 152 side with dashed arrows.
  • An island-shaped active layer (also referred to as a photoelectric conversion layer) of a light receiving device can be formed using, for example, a fine metal mask.
  • the active layer can be formed using a photolithographic method instead of using a fine metal mask.
  • a film to be the active layer is formed over the entire surface and processed to form the active layer, so that the island-shaped active layer can be formed with a uniform thickness.
  • the damage to the active layer during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.
  • a configuration in which an active layer is formed using a photolithographic method will be described as an example.
  • the light receiving device 150 has a pixel electrode 111 S, a layer 113 S, a common layer 114 and a common electrode 115 .
  • Layer 113S has at least an active layer.
  • the pixel electrode 111S can be formed in the same process as the pixel electrode 111R (not shown), the pixel electrode 111G, and the pixel electrode 111B.
  • the pixel electrode 111S is electrically connected to the conductive layer 112b included in the transistor 205S.
  • the transistor 205S can be formed in the same process as the transistors 205R, 205G, and 205B.
  • Each of the insulating layer 235, the insulating layer 218, and the insulating layer 106 has an opening in a region overlapping with the conductive layer 112b included in the transistor 205S.
  • a pixel electrode 111S included in the light receiving device 150 is provided so as to cover the opening.
  • a conductive layer 112b included in the transistor 205S is electrically connected to the pixel electrode 111S through the opening.
  • a layer 113S is provided on the pixel electrode 111S.
  • a common layer 114 is provided on the layer 113 S, and a common electrode 115 is provided on the common layer 114 .
  • the common layer 114 is a continuous film provided in common to the light receiving device 150 and the light emitting device 130 .
  • the layer 113S includes at least an active layer and preferably has multiple functional layers.
  • functional layers include carrier transport layers (hole transport layer and electron transport layer) and carrier block layers (hole block layer and electron block layer).
  • the layer 113S is a layer provided in the light receiving device 150 and not provided in the light emitting device.
  • the functional layers other than the active layer included in the layer 113S may have the same material as the functional layers other than the light-emitting layers included in the layers 113B to 113R.
  • the common layer 114 is a sequence of layers shared by the light-emitting and light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have different functions in the light-emitting device and in the light-receiving device. Components are sometimes referred to herein based on their function in the light emitting device.
  • a hole-injecting layer functions as a hole-injecting layer in light-emitting devices and as a hole-transporting layer in light-receiving devices.
  • an electron-injecting layer functions as an electron-injecting layer in light-emitting devices and as an electron-transporting layer in light-receiving devices.
  • a layer shared by the light-receiving device and the light-emitting device may have the same function in the light-emitting device as in the light-receiving device.
  • a hole-transporting layer functions as a hole-transporting layer in both a light-emitting device and a light-receiving device
  • an electron-transporting layer functions as an electron-transporting layer in both a light-emitting device and a light-receiving device.
  • An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in a region between the adjacent light emitting device 130 and light receiving device 150 .
  • mask layers 118R and 119R are mask layers between the layer 113R and the insulating layer 125 , and between the layer 113S and the insulating layer 125 are mask layers 118S and 119S.
  • the mask layer 118R and the mask layer 119R are part of the remaining mask layer provided on the layer 113R when the layer 113R is processed.
  • the mask layer 118S and the mask layer 119S are part of the remaining mask layer provided in contact with the upper surface of the layer 113S when processing the layer 113S, which is the layer containing the active layer.
  • Mask layer 118B and mask layer 118S may have the same material or may have different materials.
  • Mask layer 119B and mask layer 119S may have the same material or may have different materials.
  • Sub-pixel arrangements include, for example, a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, shapes with rounded corners of these polygons, ellipses, and circles.
  • the top surface shape of the sub-pixel corresponds to the top surface shape of the light emitting region of the light emitting device or the light receiving region of the light receiving device.
  • a stripe arrangement is applied to the pixels 210 shown in FIG. 26A.
  • the pixel 210 is composed of three types of sub-pixels: sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c.
  • Sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c exhibit different colors of light.
  • sub-pixels 11a, 11b, and 11c sub-pixels of three colors of red (R), green (G), and blue (B), yellow (Y), cyan (C), and magenta (M ), and the like.
  • the number of sub-pixel color types is not limited to three, and may be four or more.
  • four-color sub-pixels As the four-color sub-pixels, four-color sub-pixels of R, G, B, and white (W), four-color sub-pixels of R, G, B, and Y, and R, G, B, and infrared light (IR) four color sub-pixels.
  • W white
  • IR infrared light
  • Each sub-pixel has a pixel circuit that controls a light-emitting device.
  • the pixel circuit is not limited to the range of sub-pixels shown in FIG. 26A, and may be arranged outside thereof.
  • the transistors included in the pixel circuit of the sub-pixel 11a may be positioned within the range of the sub-pixel 11a shown in FIG. 26A, or part or all of them may be positioned outside the range of the sub-pixel 11a.
  • FIG. 26A shows that the aperture ratios of the sub-pixels 11a, 11b, and 11c are equal or approximately equal (it can be said that the sizes of the light-emitting regions are equal or approximately equal), one embodiment of the present invention is not limited thereto. .
  • the aperture ratios of the sub-pixel 11a, the sub-pixel 11b, and the sub-pixel 11c can be determined as appropriate.
  • the sub-pixel 11a, the sub-pixel 11b, and the sub-pixel 11c may have different aperture ratios, or two or more of them may have the same or substantially the same aperture ratio.
  • a pixel 210 shown in FIG. 26B is composed of three types of sub-pixels: sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c. sub-pixel 11b), and one sub-pixel (sub-pixel 11c) in the right column (second column).
  • a pixel 210 shown in FIG. 26C includes a subpixel 11a having a substantially trapezoidal top surface shape with rounded corners, a subpixel 11b having a substantially triangular top surface shape with rounded corners, and a substantially quadrangular or substantially hexagonal top surface shape with rounded corners. and a sub-pixel 11c having Also, the sub-pixel 11b has a larger light emitting area than the sub-pixel 11a.
  • the shape and size of each sub-pixel can be determined independently. For example, sub-pixels with more reliable light emitting devices can be smaller in size.
  • FIG. 26D shows an example in which a pixel 210a having sub-pixels 11a and 11b and a pixel 210b having sub-pixels 11b and 11c are alternately arranged.
  • a delta arrangement is applied to the pixels 210a and 210b shown in FIGS. 26E to 26G.
  • the pixel 210a has two sub-pixels (sub-pixel 11a and sub-pixel 11b) in the upper row (first row) and one sub-pixel (sub-pixel 11c) in the lower row (second row).
  • Pixel 210b has one sub-pixel (sub-pixel 11c) in the upper row (first row) and two sub-pixels (sub-pixel 11a and sub-pixel 11b) in the lower row (second row).
  • FIG. 26E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. 26F is an example in which each sub-pixel has a circular top surface shape
  • FIG. which has a substantially hexagonal top shape with rounded corners.
  • each sub-pixel is arranged inside a hexagonal region arranged closely.
  • Each sub-pixel is arranged so as to be surrounded by six sub-pixels when focusing on one sub-pixel.
  • sub-pixels that emit light of the same color are provided so as not to be adjacent to each other.
  • the sub-pixels are provided such that three sub-pixels 11b and three sub-pixels 11c are alternately arranged so as to surround the sub-pixel 11a.
  • FIG. 26H is an example in which sub-pixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two sub-pixels (for example, sub-pixel 11a and sub-pixel 11b, or sub-pixel 11b and sub-pixel 11c) aligned in the row direction are shifted.
  • the sub-pixel 11a is a sub-pixel R that emits red light
  • the sub-pixel 11b is a sub-pixel G that emits green light
  • the sub-pixel 11c is a sub-pixel that emits blue light.
  • Sub-pixel B is preferred. Note that the configuration of the sub-pixels is not limited to this, and the colors exhibited by the sub-pixels and the order in which the sub-pixels are arranged can be determined as appropriate.
  • the sub-pixel 11b may be a sub-pixel R that emits red light
  • the sub-pixel 11a may be a sub-pixel G that emits green light.
  • the top surface shape of the sub-pixel may be a polygonal shape with rounded corners, an elliptical shape, a circular shape, or the like.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • a pixel can have four types of sub-pixels.
  • a stripe arrangement is applied to the pixels 210 shown in FIGS. 27A to 27C.
  • FIG. 27A is an example in which each sub-pixel has a rectangular top surface shape
  • FIG. 27B is an example in which each sub-pixel has a top surface shape connecting two semicircles and a rectangle
  • FIG. This is an example where the sub-pixel has an elliptical top surface shape.
  • a matrix arrangement is applied to the pixels 210 shown in FIGS. 27D to 27F.
  • FIG. 27D is an example in which each sub-pixel has a square top surface shape
  • FIG. 27E is an example in which each sub-pixel has a substantially square top surface shape with rounded corners
  • FIG. which have a circular top shape.
  • 27G and 27H show an example in which one pixel 210 is composed of 2 rows and 3 columns.
  • the pixel 210 shown in FIG. 27G has three sub-pixels (sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c) in the upper row (first row), and It has one sub-pixel (sub-pixel 11d).
  • pixel 210 has sub-pixel 11a in the left column (first column), sub-pixel 11b in the center column (second column), and sub-pixel 11b in the right column (third column). It has pixels 11c and further has sub-pixels 11d over these three columns.
  • the pixel 210 shown in FIG. 27H has three sub-pixels (sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c) in the upper row (first row), and It has three sub-pixels 11d.
  • the pixel 210 has sub-pixels 11a and 11d in the left column (first column), sub-pixels 11b and 11d in the center column (second column), and sub-pixels 11b and 11d in the center column (second column).
  • a column (third column) has a sub-pixel 11c and a sub-pixel 11d.
  • FIG. 27I shows an example in which one pixel 210 is composed of 3 rows and 2 columns.
  • a pixel 210 shown in FIG. 27I has sub-pixels 11a in the upper row (first row) and sub-pixels 11b in the middle row (second row). It has a sub-pixel 11c and one sub-pixel (sub-pixel 11d) in the lower row (third row). In other words, pixel 210 has sub-pixel 11a and sub-pixel 11b in the left column (first column), sub-pixel 11c in the right column (second column), and these two columns. It has sub-pixels 11d over the entire area.
  • a pixel 210 shown in FIGS. 27A to 27I is composed of four sub-pixels: sub-pixel 11a, sub-pixel 11b, sub-pixel 11c, and sub-pixel 11d.
  • the sub-pixel 11a, the sub-pixel 11b, the sub-pixel 11c, and the sub-pixel 11d can be configured to have light-emitting devices with different emission colors.
  • Sub-pixel 11a, sub-pixel 11b, sub-pixel 11c, and sub-pixel 11d are four-color sub-pixels of R, G, B, and white (W), four-color sub-pixels of R, G, B, and Y, or , R, G, B, and infrared light (IR) sub-pixels.
  • the sub-pixel 11a is a sub-pixel R that emits red light
  • the sub-pixel 11b is a sub-pixel G that emits green light
  • the sub-pixel 11c is a sub-pixel that emits blue light.
  • the sub-pixel 11d be the sub-pixel B that emits white light, the sub-pixel Y that emits yellow light, or the sub-pixel IR that emits near-infrared light.
  • the pixel 210 shown in FIGS. 27G and 27H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the pixel 210 may have sub-pixels with light-receiving devices.
  • any one of the sub-pixels 11a to 11d may be a sub-pixel having a light receiving device.
  • the sub-pixel 11a is a sub-pixel R that emits red light
  • the sub-pixel 11b is a sub-pixel G that emits green light
  • the sub-pixel 11c is a sub-pixel that emits blue light.
  • the sub-pixel B is the sub-pixel B
  • the sub-pixel 11d is the sub-pixel S having the light-receiving device.
  • the pixel 210 shown in FIGS. 27G and 27H has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • the wavelength of light detected by the sub-pixel S having a light receiving device is not particularly limited.
  • the sub-pixel S can be configured to detect one or both of visible light and infrared light.
  • the pixel can be configured to have five types of sub-pixels.
  • FIG. 27J shows an example in which one pixel 210 is composed of 2 rows and 3 columns.
  • the pixel 210 shown in FIG. 27J has three sub-pixels (sub-pixel 11a, sub-pixel 11b, and sub-pixel 11c) in the upper row (first row), and It has two sub-pixels (sub-pixel 11d and sub-pixel 11e).
  • pixel 210 has sub-pixels 11a and 11d in the left column (first column), sub-pixel 11b in the center column (second column), and right column (3 column), and sub-pixels 11e are provided from the second to third columns.
  • FIG. 27K shows an example in which one pixel 210 is composed of 3 rows and 2 columns.
  • a pixel 210 shown in FIG. 27K has sub-pixels 11a in the upper row (first row) and sub-pixels 11b in the middle row (second row). It has a sub-pixel 11c and two sub-pixels (sub-pixel 11d and sub-pixel 11e) in the lower row (third row). In other words, pixel 210 has subpixels 11a, 11b, and 11d in the left column (first column), and subpixels 11c and 11e in the right column (second column). have
  • the sub-pixel 11a is a sub-pixel R that emits red light
  • the sub-pixel 11b is a sub-pixel G that emits green light
  • the sub-pixel 11c is a sub-pixel that emits blue light.
  • the sub-pixel B that exhibits
  • the pixel 210 shown in FIG. 27J has a stripe arrangement of R, G, and B, so that the display quality can be improved.
  • the layout of R, G, and B is a so-called S-stripe arrangement, so the display quality can be improved.
  • each pixel 210 shown in FIGS. 27J and 27K it is preferable to apply a sub-pixel S having a light receiving device to at least one of the sub-pixels 11d and 11e.
  • the structures of the light receiving devices may be different from each other.
  • at least a part of the wavelength regions of the light to be detected may be different.
  • one of the sub-pixel 11d and the sub-pixel 11e may have a light receiving device that mainly detects visible light, and the other may have a light receiving device that mainly detects infrared light.
  • one of the sub-pixel 11d and the sub-pixel 11e is applied with a sub-pixel S having a light receiving device, and the other is a light-emitting device that can be used as a light source. It is preferable to apply sub-pixels with For example, it is preferable that one of the sub-pixels 11d and 11e is a sub-pixel IR that emits infrared light, and the other is a sub-pixel S that has a light receiving device that detects infrared light.
  • a pixel having sub-pixels R, G, B, IR, and S an image is displayed using the sub-pixels R, G, and B, and the sub-pixel IR is used as a light source at the sub-pixel S. Reflected infrared light can be detected.
  • various layouts can be applied to pixels each including subpixels each including a light-emitting device. Further, a structure in which a pixel includes both a light-emitting device and a light-receiving device can be applied to the display device of one embodiment of the present invention. Also in this case, various layouts can be applied.
  • the light-emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • EL layer 763 can be composed of multiple layers, such as layer 780 , light-emitting layer 771 , and layer 790 .
  • the light-emitting layer 771 has at least a light-emitting substance (also referred to as a light-emitting material).
  • the layer 780 can be a layer containing a material with high hole injection property (hole injection layer) or a layer containing a material with high hole transport property (positive electrode layer). hole-transporting layer) and a layer containing a highly electron-blocking material (electron-blocking layer).
  • the layer 790 includes a layer containing a material with high electron injection properties (electron injection layer), a layer containing a material with high electron transport properties (electron transport layer), and a layer containing a material with high hole blocking properties (positive layer). pore blocking layer).
  • layers 780 and 790 are reversed to each other.
  • a structure having a layer 780, a light-emitting layer 771, and a layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 28A is called a single structure in this specification.
  • FIG. 28B is a modification of the EL layer 763 included in the light emitting device shown in FIG. 28A. Specifically, the light-emitting device shown in FIG. It has a top layer 792 and a top electrode 762 on layer 792 .
  • layer 781 is a hole injection layer
  • layer 782 is a hole transport layer
  • layer 791 is an electron transport layer
  • layer 792 is an electron injection layer.
  • the layer 781 is an electron injection layer
  • the layer 782 is an electron transport layer
  • the layer 791 is a hole transport layer
  • the layer 792 is a hole injection layer.
  • FIGS. 28C and 28D a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layers 780 and 790 is also a variation of the single structure.
  • FIGS. 28C and 28D show an example having three light-emitting layers, the number of light-emitting layers in a single-structure light-emitting device may be two or four or more.
  • a single structure light emitting device may also have a buffer layer between the two light emitting layers.
  • the buffer layer for example, a carrier transport layer (a hole transport layer and an electron transport layer) can be used.
  • tandem structure a configuration in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is herein referred to as a tandem structure. call.
  • the tandem structure may also be called a stack structure.
  • FIGS. 28D and 28F are examples in which the display device has a layer 764 that overlaps the light emitting device.
  • Figure 28D is an example of layer 764 overlapping the light emitting device shown in Figure 28C
  • Figure 28F is an example of layer 764 overlapping the light emitting device shown in Figure 28E.
  • a conductive film that transmits visible light is used for the upper electrode 762 in order to extract light to the upper electrode 762 side.
  • One or both of a color conversion layer and a color filter (colored layer) can be used as the layer 764 .
  • the light-emitting layers 771, 772, and 773 may be made of a light-emitting material that emits light of the same color, or even the same light-emitting material.
  • a light-emitting substance that emits blue light may be used for the light-emitting layers 771 , 772 , and 773 .
  • blue light emitted by the light-emitting device can be extracted.
  • a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • a color conversion layer and a colored layer as the layer 764 .
  • Some of the light emitted by the light emitting device may pass through without being converted by the color conversion layer.
  • the colored layer absorbs light of colors other than the desired color, and the color purity of the light exhibited by the sub-pixels can be increased.
  • a single-structure light-emitting device preferably has a light-emitting layer containing a light-emitting substance that emits blue light and a light-emitting layer containing a light-emitting substance that emits visible light with a longer wavelength than blue.
  • a color filter may be provided as the layer 764 shown in FIG. 28D.
  • a desired color of light can be obtained by passing the white light through the color filter.
  • a single-structure light-emitting device has three light-emitting layers, a light-emitting layer containing a light-emitting substance that emits red (R) light, a light-emitting layer containing a light-emitting substance that emits green (G) light, and a light-emitting layer that emits blue light. It is preferable to have a light-emitting layer having a light-emitting substance (B) that emits light.
  • the stacking order of the light-emitting layers can be R, G, B from the anode side, or R, B, G, etc. from the anode side.
  • a buffer layer may be provided between R and G or B.
  • a light-emitting device with a single structure has two light-emitting layers, it has a light-emitting layer containing a light-emitting substance that emits blue (B) light and a light-emitting layer containing a light-emitting substance that emits yellow (Y) light. configuration is preferred.
  • This structure is sometimes called a BY single structure.
  • a light-emitting device that emits white light preferably contains two or more types of light-emitting substances.
  • a light-emitting substance may be selected so that the light emitted from each light-emitting substance is mixed to produce white light. For example, by making the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole. The same applies to light-emitting devices having three or more light-emitting layers.
  • the layer 780 and the layer 790 may each independently have a laminated structure consisting of two or more layers.
  • the luminescent layers 771 and 772 may be made of a luminescent material that emits light of the same color, or even the same luminescent material.
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 .
  • blue light emitted by the light-emitting device can be extracted.
  • a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • a light-emitting device having the configuration shown in FIG. 28E or FIG. 28F is used for sub-pixels that emit light of each color
  • different light-emitting substances may be used depending on the sub-pixels.
  • a light-emitting substance that emits red light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits green light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 . It can be said that the display device having such a configuration employs a tandem structure light emitting device and has an SBS structure. Therefore, it is possible to have both the merit of the tandem structure and the merit of the SBS structure. As a result, a highly reliable light-emitting device capable of emitting light with high brightness can be realized.
  • light-emitting substances with different emission colors may be used for the light-emitting layers 771 and 772 .
  • the light emitted from the light-emitting layer 771 and the light emitted from the light-emitting layer 772 are complementary colors, white light emission is obtained.
  • a color filter may be provided as layer 764 shown in FIG. 28F. A desired color of light can be obtained by passing the white light through the color filter.
  • FIGS. 28E and 28F show an example in which the light emitting unit 763a has one light emitting layer 771 and the light emitting unit 763b has one light emitting layer 772, but the present invention is not limited to this.
  • Each of the light-emitting unit 763a and the light-emitting unit 763b may have two or more light-emitting layers.
  • FIGS. 28E and 28F exemplify a light-emitting device having two light-emitting units
  • a light emitting device may have three or more light emitting units.
  • a structure having two light-emitting units may be called a two-stage tandem structure, and a structure having three light-emitting units may be called a three-stage tandem structure.
  • light-emitting unit 763a has layers 780a, 771 and 790a
  • light-emitting unit 763b has layers 780b, 772 and 790b.
  • layers 780a and 780b each have one or more of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • layers 790a and 790b each include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, then layers 780a and 790a would have the opposite arrangement, and layers 780b and 790b would also have the opposite arrangement.
  • layer 780a has a hole-injection layer and a hole-transport layer over the hole-injection layer, and further includes a hole-transport layer. It may have an electron blocking layer on the layer.
  • Layer 790a also has an electron-transporting layer and may also have a hole-blocking layer between the light-emitting layer 771 and the electron-transporting layer.
  • Layer 780b also has a hole transport layer and may also have an electron blocking layer on the hole transport layer.
  • Layer 790b also has an electron-transporting layer, an electron-injecting layer on the electron-transporting layer, and may also have a hole-blocking layer between the light-emitting layer 772 and the electron-transporting layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, for example, layer 780a has an electron injection layer, an electron transport layer on the electron injection layer, and a positive electrode on the electron transport layer. It may have a pore blocking layer. Layer 790a also has a hole-transporting layer and may also have an electron-blocking layer between the light-emitting layer 771 and the hole-transporting layer.
  • Layer 780b also has an electron-transporting layer and may also have a hole-blocking layer on the electron-transporting layer.
  • Layer 790b may also have a hole-transporting layer, a hole-injecting layer on the hole-transporting layer, and an electron-blocking layer between the light-emitting layer 772 and the hole-transporting layer. good.
  • two light-emitting units are stacked with the charge generation layer 785 interposed therebetween.
  • Charge generation layer 785 has at least a charge generation region.
  • the charge-generating layer 785 has a function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.
  • An example of a tandem-structured light-emitting device includes the configurations shown in FIGS. 29A to 29C.
  • FIG. 29A shows a configuration having three light emitting units.
  • a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785, respectively.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772, and layer 790b
  • light-emitting unit 763c includes , a layer 780c, a light-emitting layer 773, and a layer 790c.
  • a structure applicable to the layers 780a and 780b can be used for the layer 780c
  • a structure applicable to the layers 790a and 790b can be used for the layer 790c.
  • the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 preferably have light-emitting substances that emit light of the same color.
  • the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 each include a red (R) light-emitting substance (so-called three-stage tandem structure of R ⁇ R ⁇ R), the light-emitting layer 771, and the light-emitting layer 772 and 773 each include a green (G) light-emitting substance (so-called G ⁇ G ⁇ G three-stage tandem structure), or the light-emitting layers 771, 772, and 773 each include a blue light-emitting layer.
  • R red
  • G green
  • a structure (B) including a light-emitting substance (a so-called three-stage tandem structure of B ⁇ B ⁇ B) can be employed.
  • a ⁇ b means that a light-emitting unit having a light-emitting substance that emits light b is provided over a light-emitting unit that has a light-emitting substance that emits light a through a charge generation layer.
  • a, b denote colors.
  • light-emitting substances with different emission colors may be used for part or all of the light-emitting layer 771, light-emitting layer 772, and light-emitting layer 773.
  • the combination of the emission colors of the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 is, for example, a configuration in which any two are blue (B) and the remaining one is yellow (Y), and any one is red (R ), the other one is green (G), and the remaining one is blue (B).
  • FIG. 29B shows a configuration in which two light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785.
  • the light-emitting unit 763a includes a layer 780a, a light-emitting layer 771a, a light-emitting layer 771b, a light-emitting layer 771c, and a layer 790a. and a light-emitting layer 772c and a layer 790b.
  • the luminescent material can be selected so that the light emitted from the light-emitting layer 771a, the light-emitting layer 771b, and the light-emitting layer 771c are mixed so that the light-emitting unit 763a emits white light (W).
  • light-emitting substances can be selected so that the light emitted from each layer is mixed so that the light-emitting unit 763b emits white light (W). That is, the configuration shown in FIG. 29B is a two-stage tandem structure of W ⁇ W.
  • a tandem structure light-emitting device When using a tandem structure light-emitting device, a two-stage tandem structure of B ⁇ Y or Y ⁇ B having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, red (R ) and green (G) light, and a two-stage tandem structure of R ⁇ G ⁇ B or B ⁇ R ⁇ G having a light-emitting unit that emits blue (B) light, blue (B) light , a light-emitting unit that emits yellow (Y) light, and a light-emitting unit that emits blue (B) light, in this order.
  • a three-stage tandem structure of B ⁇ YG ⁇ B having, in this order, a light-emitting unit that emits light, a light-emitting unit that emits yellow-green (YG) light, and a light-emitting unit that emits blue (B) light.
  • a light-emitting unit that emits light
  • a light-emitting unit that emits yellow-green (YG) light
  • green (G) light-emitting light emitting unit, and blue (B) light-emitting unit in this order such as a three-stage tandem structure of B ⁇ G ⁇ B.
  • a ⁇ b means that one light-emitting unit includes a light-emitting substance that emits light a and a light-emitting substance that emits light b.
  • a light-emitting unit having one light-emitting layer and a light-emitting unit having multiple light-emitting layers may be combined.
  • a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series via charge generation layers 785, respectively.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772a, light-emitting layer 772b, light-emitting layer 772c, and layer 790b.
  • the light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.
  • the light-emitting unit 763a is a light-emitting unit that emits blue (B) light
  • the light-emitting unit 763b emits red (R), green (G), and yellow-green (YG) light.
  • a three-stage tandem structure of B ⁇ R, G, and YG ⁇ B, in which the light-emitting unit 763c is a light-emitting unit that emits blue (B) light, or the like can be applied.
  • the number of layers of the light emitting units and the order of colors are, from the anode side, a two-stage structure of B and Y, a two-stage structure of B and the light-emitting unit X, a three-stage structure of B, Y, and B, B, X
  • the order of the number of layers of light-emitting layers and the colors in the light-emitting unit X is, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, and a two-layer structure of G and R. structure, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R, or the like.
  • another layer may be provided between the two light-emitting layers.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side of the lower electrode 761 and the upper electrode 762 .
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • the display device has a light-emitting device that emits infrared light
  • a conductive film that transmits visible light and infrared light is used for the electrode on the side from which light is extracted
  • a conductive film is used for the electrode on the side that does not extract light.
  • a conductive film that reflects visible light and infrared light is preferably used.
  • a conductive film that transmits visible light may also be used for the electrode on the side that does not take out light.
  • the electrode is preferably placed between the reflective layer and the EL layer 763 . That is, the light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display device.
  • Metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used as materials for forming the pair of electrodes of the light-emitting device.
  • Specific examples of such materials include aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, and yttrium. , metals such as neodymium, and alloys containing these in appropriate combinations.
  • examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), indium zinc oxide (In—Zn oxide), and In— W—Zn oxide and the like can be mentioned.
  • an alloy containing aluminum (aluminum alloy) such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), an alloy of silver and magnesium, and an alloy of silver, palladium and copper ( APC) and other silver-containing alloys.
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium, cesium, calcium, strontium
  • europium e.g., europium
  • rare earth metals such as ytterbium, and appropriate combinations thereof alloys, graphene, and the like.
  • a micro optical resonator (microcavity) structure is preferably applied to the light emitting device. Therefore, one of the pair of electrodes included in the light-emitting device is preferably an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.
  • the light transmittance of the transparent electrode is set to 40% or more.
  • an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) as the transparent electrode of the light emitting device.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • a light-emitting device has at least a light-emitting layer. Further, in the light-emitting device, as layers other than the light-emitting layer, a material with high hole-injection property, a material with high hole-transport property, a hole-blocking material, a material with high electron-transport property, an electron-blocking material, and a material with high electron-injection property A layer containing a material, a bipolar material (a material with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • the light-emitting device has, in addition to the light-emitting layer, one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer. can be configured.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-emitting device, and inorganic compounds may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the luminescent layer has one or more luminescent substances.
  • a substance that emits light such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Examples of light-emitting substances include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. be done.
  • a phosphorescent material for example, a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or an organometallic complex (especially an iridium complex) having a pyridine skeleton, or a phenylpyridine derivative having an electron-withdrawing group is coordinated.
  • Organometallic complexes particularly iridium complexes
  • platinum complexes, rare earth metal complexes, and the like, which are used as a child, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a highly hole-transporting material (hole-transporting material) and a highly electron-transporting material (electron-transporting material) can be used as the one or more organic compounds.
  • a highly hole-transporting material hole-transporting material
  • a highly electron-transporting material electron-transporting material
  • electron-transporting material a material having a high electron-transporting property that can be used for the electron-transporting layer, which will be described later, can be used.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the hole-injecting layer is a layer that injects holes from the anode into the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • hole-transporting material a material having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • a material with a high hole-injection property a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the above-described periodic table (typically molybdenum oxide) is used. may be used.
  • the hole-transporting layer is a layer that transports the holes injected from the anode through the hole-injecting layer to the light-emitting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable as the hole-transporting material. Note that materials other than these can also be used as long as they have higher hole-transport properties than electron-transport properties.
  • hole-transporting materials materials with high hole-transporting properties such as ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton) are available. preferable.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • the electron blocking layer is provided in contact with the light emitting layer.
  • the electron blocking layer is a layer containing a material capable of transporting holes and blocking electrons.
  • a material having an electron blocking property can be used among the above hole-transporting materials.
  • the electron blocking layer has hole transport properties, it can also be called a hole transport layer. Moreover, the layer which has electron blocking property can also be called an electron blocking layer among hole transport layers.
  • the electron transport layer is a layer that transports electrons injected from the cathode through the electron injection layer to the light emitting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable as the electron-transporting material. Note that materials other than these can also be used as long as they have higher electron-transport properties than hole-transport properties.
  • Electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, and oxazole. derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds.
  • a material having a high electron transport property such as a type heteroaromatic compound can be used.
  • the hole blocking layer is provided in contact with the light emitting layer.
  • the hole-blocking layer is a layer containing a material that has electron-transport properties and can block holes. Among the above electron-transporting materials, materials having hole-blocking properties can be used for the hole-blocking layer.
  • the hole-blocking layer can also be called an electron-transporting layer because it has electron-transporting properties. Moreover, among the electron transport layers, a layer having hole blocking properties can also be referred to as a hole blocking layer.
  • the electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer that contains a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the lowest unoccupied molecular orbital (LUMO) level of a material with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the value of the work function of the material used for the cathode. preferable.
  • the electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latolithium (abbreviation: LiPPP), lithium oxide (LiO x ), cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a structure in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.
  • the electron injection layer may have an electron-transporting material.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the LUMO level of the organic compound having a lone pair of electrons is preferably -3.6 eV or more and -2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoelectron spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO: Highest Occupied Molecular Orbital) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • HATNA diquinoxalino [2,3-a:2′,3′-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3 , 5-triazine
  • the charge generation layer has at least a charge generation region as described above.
  • the charge generation region preferably contains an acceptor material, for example, preferably contains a hole transport material and an acceptor material applicable to the hole injection layer described above.
  • the charge generation layer preferably has a layer containing a material with high electron injection properties. This layer can also be called an electron injection buffer layer.
  • the electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.
  • the electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can be configured to contain, for example, an alkali metal compound or an alkaline earth metal compound.
  • the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen. Lithium (Li 2 O), etc.) is more preferred.
  • the above materials applicable to the electron injection layer can be preferably used.
  • the charge generation layer preferably has a layer containing a material with high electron transport properties. Such layers may also be referred to as electron relay layers.
  • the electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer.
  • the electron relay layer has a function of smoothly transferring electrons by preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer).
  • a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviation: CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • charge generation region the electron injection buffer layer, and the electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape or characteristics.
  • the charge generation layer may have a donor material instead of the acceptor material.
  • the charge-generating layer may have a layer containing an electron-transporting material and a donor material, which are applicable to the electron-injecting layer described above.
  • the light receiving device has a layer 765 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • Layer 765 has at least one active layer and may have other layers.
  • FIG. 30B is a modification of the layer 765 included in the light receiving device shown in FIG. 30A. Specifically, the light-receiving device shown in FIG. have.
  • the active layer 767 functions as a photoelectric conversion layer.
  • the layer 766 has one or both of a hole transport layer and an electron blocking layer.
  • Layer 768 also includes one or both of an electron-transporting layer and a hole-blocking layer.
  • Both low-molecular-weight compounds and high-molecular-weight compounds can be used in the light-receiving device, and inorganic compounds may be included.
  • the layers constituting the light-receiving device can be formed by methods such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, and a coating method.
  • the active layer of the light receiving device contains a semiconductor.
  • the semiconductor include inorganic semiconductors such as silicon and organic semiconductors including organic compounds.
  • an organic semiconductor is used as the semiconductor included in the active layer.
  • the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and a manufacturing apparatus can be shared, which is preferable.
  • Electron-accepting organic semiconductor materials such as fullerenes (eg, C 60 , C 70 , etc.) and fullerene derivatives are examples of the n-type semiconductor material of the active layer.
  • fullerene derivatives include [6,6]-Phenyl- C71 -butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl- C61 -butyric acid methyl ester (abbreviation: PC60BM), 1' , 1′′,4′,4′′-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2′,3′,56,60:2′′,3′′][5,6]fullerene -C60 (abbreviation: ICBA) and the like.
  • PC70BM [6,6]-Phenyl- C71 -butyric acid methyl ester
  • PC60BM [6,6]-Phenyl- C61 -butyric acid
  • n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide (abbreviation: Me-PTCDI), and 2,2' -(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalononitrile (abbreviation) : FT2TDMN).
  • Me-PTCDI N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic diimide
  • FT2TDMN 2,2' -(5,5′-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)
  • n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. mentioned.
  • Materials for the p-type semiconductor of the active layer include copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine ( SnPc), quinacridones, and electron-donating organic semiconductor materials such as rubrene.
  • CuPc copper
  • DBP tetraphenyldibenzoperiflanthene
  • ZnPc zinc phthalocyanine
  • SnPc tin phthalocyanine
  • quinacridones quinacridones
  • electron-donating organic semiconductor materials such as rubrene.
  • Examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, and porphyrins.
  • phthalocyanine derivatives phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.
  • the HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material.
  • the LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.
  • a spherical fullerene as the electron-accepting organic semiconductor material, and use an organic semiconductor material with a shape close to a plane as the electron-donating organic semiconductor material. Molecules with similar shapes tend to gather together, and when molecules of the same type aggregate, the energy levels of the molecular orbitals are close to each other, so the carrier transportability can be enhanced.
  • PBDB-T polymer compound such as a PBDB-T derivative
  • a method of dispersing an acceptor material in PBDB-T or a PBDB-T derivative can be used.
  • the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.
  • the active layer may be formed by laminating an n-type semiconductor and a p-type semiconductor.
  • a third material may be mixed in addition to the n-type semiconductor material and the p-type semiconductor material.
  • the third material may be a low-molecular compound or a high-molecular compound.
  • the light-receiving device further includes, as layers other than the active layer, a layer containing a highly hole-transporting material, a highly electron-transporting material, or a bipolar material (materials with high electron-transporting and hole-transporting properties). may have.
  • the layer is not limited to the above, and may further include a layer containing a highly hole-injecting material, a hole-blocking material, a highly electron-injecting material, an electron-blocking material, or the like.
  • materials that can be used in the above-described light-emitting device can be used.
  • polymer compounds such as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid (abbreviation: PEDOT/PSS), molybdenum oxide, and copper iodide Inorganic compounds such as (CuI) can be used.
  • Inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as the electron-transporting material or the hole-blocking material.
  • the light receiving device may have, for example, a mixed film of PEIE and ZnO.
  • Display device having photodetection function In the display device of one embodiment of the present invention, light-emitting devices are arranged in matrix in the display portion, and an image can be displayed on the display portion. Further, light receiving devices are arranged in a matrix in the display section, and the display section has one or both of an imaging function and a sensing function in addition to an image display function.
  • the display part can be used for an image sensor or a touch sensor. That is, by detecting light on the display portion, an image can be captured, or proximity or contact of an object (a finger, hand, pen, or the like) can be detected.
  • the display device of one embodiment of the present invention can use a light-emitting device as a light source of a sensor.
  • the light-receiving device can detect the reflected light (or scattered light).
  • imaging or touch detection is possible.
  • a display device of one embodiment of the present invention includes a light-emitting device and a light-receiving device in a pixel.
  • a display device of one embodiment of the present invention uses an organic EL device as a light-emitting device and an organic photodiode as a light-receiving device.
  • An organic EL device and an organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated in a display device using an organic EL device.
  • a display device having a light-emitting device and a light-receiving device in a pixel, since the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image with all the sub-pixels of the display device, some sub-pixels exhibit light as a light source, some other sub-pixels perform light detection, and the remaining sub-pixels Images can also be displayed.
  • the display device can capture an image using the light receiving device.
  • the display device of this embodiment can be used as a scanner.
  • an image sensor can be used to capture images for personal authentication using fingerprints, palm prints, irises, pulse shapes (including vein shapes and artery shapes), or faces.
  • an image sensor can be used to capture an image around the eye, the surface of the eye, or the inside of the eye (such as the fundus) of the user of the wearable device. Therefore, the wearable device can have a function of detecting any one or more selected from the user's blink, black eye movement, and eyelid movement.
  • the light-receiving device can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor).
  • a touch sensor also called a direct touch sensor
  • a near-touch sensor also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor.
  • the touch sensor or near-touch sensor can detect the proximity or contact of an object (finger, hand, pen, etc.).
  • a touch sensor can detect an object by bringing the display device into direct contact with the object.
  • the near-touch sensor can detect the object even if the object does not touch the display device.
  • the display device can detect the object when the distance between the display device and the object is 0.1 mm or more and 300 mm or less, preferably 3 mm or more and 50 mm or less.
  • the display device can be operated without direct contact with the object, in other words, the display device can be operated without contact.
  • the risk of staining or scratching the display device can be reduced, or the object can be displayed without directly touching the stain (for example, dust or virus) attached to the display device. It becomes possible to operate the device.
  • a display device of one embodiment of the present invention can have a variable refresh rate.
  • the power consumption can be reduced by adjusting the refresh rate (for example, in the range of 1 Hz to 240 Hz) according to the content displayed on the display device.
  • the drive frequency of the touch sensor or the near-touch sensor may be changed according to the refresh rate. For example, when the refresh rate of the display device is 120 Hz, the driving frequency of the touch sensor or the near-touch sensor can be higher than 120 Hz (typically 240 Hz). With this structure, low power consumption can be achieved and the response speed of the touch sensor or the near touch sensor can be increased.
  • a display device 200 shown in FIGS. 30C to 30E has a layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • FIG. 30C to 30E has a layer 353 having a light receiving device, a functional layer 355, and a layer 357 having a light emitting device between a substrate 351 and a substrate 359.
  • the functional layer 355 has a circuit for driving the light receiving device and a circuit for driving the light emitting device.
  • One or more of switches, transistors, capacitors, resistors, wirings, terminals, and the like can be provided in the functional layer 355 .
  • switches, transistors, capacitors, resistors, wirings, terminals, and the like can be provided in the functional layer 355 .
  • a structure in which the switch and the transistor are not provided may be employed.
  • the transistor provided in the functional layer 355 the transistor described in Embodiment 1 can be preferably used.
  • a finger 352 touching the display device 200 reflects light emitted by a light-emitting device in a layer 357 having a light-emitting device, so that a light-receiving device in a layer 353 having a light-receiving device reflects the light. Detect light. Thereby, it is possible to detect that the finger 352 touches the display device 200 .
  • FIGS. 30D and 30E it may have a function of detecting or imaging an object that is close to (not in contact with) the display device.
  • FIG. 30D shows an example of detecting a finger of a person
  • FIG. 30E shows an example of detecting information around, on the surface of, or inside the human eye (number of blinks, eye movement, eyelid movement, etc.).
  • An electronic device of this embodiment includes the display device of one embodiment of the present invention in a display portion.
  • the display device of one embodiment of the present invention can easily have high definition and high resolution. Therefore, it can be used for display portions of various electronic devices.
  • Examples of electronic devices include electronic devices with relatively large screens such as televisions, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras. , digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, sound reproduction devices, and the like.
  • the display device of one embodiment of the present invention can have high definition, it can be suitably used for an electronic device having a relatively small display portion.
  • electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), VR devices such as head-mounted displays, glasses-type AR devices, and MR devices. wearable devices that can be attached to
  • a display device of one embodiment of the present invention includes HD (1280 ⁇ 720 pixels), FHD (1920 ⁇ 1080 pixels), WQHD (2560 ⁇ 1440 pixels), WQXGA (2560 ⁇ 1600 pixels), 4K (2560 ⁇ 1600 pixels), 3840 ⁇ 2160) and 8K (7680 ⁇ 4320 pixels).
  • the resolution it is preferable to set the resolution to 4K, 8K, or higher.
  • the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, and 3000 ppi or more.
  • the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, 16:10.
  • the electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage , power, radiation, flow, humidity, gradient, vibration, odor or infrared sensing, detection or measurement).
  • the electronic device of this embodiment can have various functions. For example, functions to display various information (still images, moving images, text images, etc.) on the display unit, touch panel functions, calendars, functions to display the date or time, functions to execute various software (programs), wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.
  • FIGS. 31A to 31D An example of a wearable device that can be worn on the head will be described with reference to FIGS. 31A to 31D.
  • These wearable devices have at least one of a function of displaying AR content, a function of displaying VR content, a function of displaying SR content, and a function of displaying MR content.
  • the electronic device has a function of displaying at least one content such as AR, VR, SR, and MR, it is possible to enhance the immersive feeling of the user.
  • Electronic device 700A shown in FIG. 31A and electronic device 700B shown in FIG. It has a control section (not shown), an imaging section (not shown), a pair of optical members 753 , a frame 757 and a pair of nose pads 758 .
  • the display device of one embodiment of the present invention can be applied to the display panel 751 . Therefore, the electronic device can display images with extremely high definition.
  • the electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto the display area 756 of the optical member 753. Since the optical member 753 has translucency, the user can see the image displayed in the display area superimposed on the transmitted image visually recognized through the optical member 753 . Therefore, the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.
  • the electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front as an imaging unit. Further, the electronic devices 700A and 700B each include an acceleration sensor such as a gyro sensor to detect the orientation of the user's head and display an image corresponding to the orientation in the display area 756. You can also
  • the communication unit has a wireless communication device, and can supply video signals, etc. by the wireless communication device.
  • a connector to which a cable to which a video signal and a power supply potential are supplied may be provided.
  • a battery is provided in the electronic device 700A and the electronic device 700B, and can be charged wirelessly and/or wiredly.
  • the housing 721 may be provided with a touch sensor module.
  • the touch sensor module has a function of detecting that the outer surface of the housing 721 is touched.
  • the touch sensor module can detect a user's tap operation or slide operation and execute various processes. For example, it is possible to perform processing such as pausing or resuming a moving image by a tap operation, and fast-forward or fast-reverse processing can be performed by a slide operation. Further, by providing a touch sensor module for each of the two housings 721, the range of operations can be expanded.
  • Various touch sensors can be applied to the touch sensor module.
  • various methods such as a capacitance method, a resistive film method, an infrared method, an electromagnetic induction method, a surface acoustic wave method, and an optical method can be adopted.
  • a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as the light receiving device.
  • a photoelectric conversion device also referred to as a photoelectric conversion element
  • One or both of an inorganic semiconductor and an organic semiconductor can be used for the active layer of the photoelectric conversion device.
  • Electronic device 800A shown in FIG. 31C and electronic device 800B shown in FIG. It has a pair of imaging units 825 and a pair of lenses 832 .
  • the display device of one embodiment of the present invention can be applied to the display portion 820 . Therefore, the electronic device can display images with extremely high definition. This allows the user to feel a high sense of immersion.
  • the display unit 820 is provided inside the housing 821 at a position where it can be viewed through the lens 832 . By displaying different images on the pair of display portions 820, three-dimensional display using parallax can be performed.
  • Each of the electronic device 800A and the electronic device 800B can be said to be an electronic device for VR.
  • a user wearing electronic device 800 ⁇ /b>A or electronic device 800 ⁇ /b>B can view an image displayed on display unit 820 through lens 832 .
  • the electronic device 800A and the electronic device 800B each have a mechanism that can adjust the left and right positions of the lens 832 and the display unit 820 so that they are optimally positioned according to the position of the user's eyes. preferably. In addition, it is preferable to have a mechanism for adjusting focus by changing the distance between the lens 832 and the display portion 820 .
  • the wearing section 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.
  • the shape is illustrated as a temple of eyeglasses (also referred to as a temple), but the shape is not limited to this.
  • the mounting portion 823 may be worn by the user, and may be, for example, a helmet-type or band-type shape.
  • the imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820 . An image sensor can be used for the imaging unit 825 . Also, a plurality of cameras may be provided so as to be able to deal with a plurality of angles of view such as telephoto and wide angle.
  • a distance measuring sensor capable of measuring the distance of an object
  • the imaging unit 825 is one aspect of the detection unit.
  • the detection unit can use, for example, an image sensor or a distance image sensor such as LIDAR (Light Detection and Ranging).
  • LIDAR Light Detection and Ranging
  • the electronic device 800A may have a vibration mechanism that functions as bone conduction earphones.
  • a vibration mechanism that functions as bone conduction earphones.
  • one or more of the display portion 820, the housing 821, and the mounting portion 823 can be provided with the vibration mechanism.
  • the user can enjoy video and audio simply by wearing the electronic device 800A without the need for separate audio equipment such as headphones, earphones, or speakers.
  • the electronic device 800A and the electronic device 800B may each have an input terminal.
  • the input terminal can be connected to a cable that supplies a video signal from a video output device or the like and power or the like for charging a battery provided in the electronic device.
  • the electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750.
  • Earphone 750 has a communication unit (not shown) and has a wireless communication function.
  • the earphone 750 can receive information (eg, audio data) from the electronic device by wireless communication function.
  • information eg, audio data
  • electronic device 700A shown in FIG. 31A has a function of transmitting information to earphone 750 by a wireless communication function.
  • electronic device 800A shown in FIG. 31C has a function of transmitting information to earphone 750 by a wireless communication function.
  • the electronic device may have an earphone part.
  • Electronic device 700B shown in FIG. 31B has earphone section 727 .
  • the earphone section 727 and the control section can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 727 and the control section may be arranged inside the housing 721 or the mounting section 723 .
  • the electronic device 800B shown in FIG. 31D has an earphone section 827.
  • the earphone unit 827 and the control unit 824 can be configured to be wired to each other.
  • a part of the wiring connecting the earphone section 827 and the control section 824 may be arranged inside the housing 821 or the mounting section 823 .
  • the earphone section 827 and the mounting section 823 may have magnets. Accordingly, the earphone section 827 can be fixed to the mounting section 823 by magnetic force, which is preferable because it facilitates storage.
  • the electronic device may have an audio output terminal to which earphones or headphones can be connected. Also, the electronic device may have one or both of an audio input terminal and an audio input mechanism.
  • the voice input mechanism can use, for example, a sound collecting device such as a microphone. By providing the electronic device with a voice input mechanism, the electronic device may function as a so-called headset.
  • the electronic device of one embodiment of the present invention is suitable for both glasses type (electronic device 700A, electronic device 700B, etc.) and goggle type (electronic device 800A, electronic device 800B, etc.). is.
  • An electronic device of one embodiment of the present invention can transmit information to earphones by wire or wirelessly.
  • An electronic device 6500 shown in FIG. 32A is a mobile information terminal that can be used as a smart phone.
  • the electronic device 6500 has a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • a display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502 .
  • FIG. 32B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.
  • a light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, and a printer are placed in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • a portion of the display panel 6511 is folded back in a region outside the display portion 6502, and the FPC 6515 is connected to the folded portion.
  • An IC6516 is mounted on the FPC6515.
  • the FPC 6515 is connected to terminals provided on the printed circuit board 6517 .
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511 . Therefore, an extremely lightweight electronic device can be realized. In addition, since the display panel 6511 is extremely thin, the thickness of the electronic device can be reduced and the large-capacity battery 6518 can be mounted. In addition, by folding back part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.
  • a television set 7100 has a display portion 7000 incorporated in a housing 7101 .
  • a configuration in which a housing 7101 is supported by a stand 7103 is shown.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • the operation of the television apparatus 7100 shown in FIG. 32C can be performed using operation switches provided in the housing 7101 and a separate remote control operation device 7111 .
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display unit that displays information output from the remote controller 7111 .
  • a channel and a volume can be operated with operation keys or a touch panel provided in the remote controller 7111 , and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is configured to include a receiver, a modem, and the like.
  • the receiver can receive general television broadcasts. Also, by connecting to a wired or wireless communication network via a modem, one-way (from the sender to the receiver) or two-way (between the sender and the receiver, or between the receivers, etc.) information communication. is also possible.
  • FIG. 32D shows an example of a notebook personal computer.
  • a notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • the display portion 7000 is incorporated in the housing 7211 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 .
  • FIGS. 32E and 32F An example of digital signage is shown in FIGS. 32E and 32F.
  • a digital signage 7300 shown in FIG. 32E includes a housing 7301, a display unit 7000, speakers 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), connection terminals, various sensors, a microphone, and the like.
  • FIG. 32F is a digital signage 7400 attached to a cylindrical post 7401.
  • a digital signage 7400 has a display section 7000 provided along the curved surface of a pillar 7401 .
  • the display device of one embodiment of the present invention can be applied to the display portion 7000 in FIGS. 32E and 32F.
  • the wider the display unit 7000 the more information can be provided at once.
  • the wider the display unit 7000 the more conspicuous it is, and the more effective the advertisement can be, for example.
  • a touch panel By applying a touch panel to the display unit 7000, not only can images or moving images be displayed on the display unit 7000, but also the user can intuitively operate the display unit 7000, which is preferable. Further, when used for providing information such as route information or traffic information, usability can be enhanced by intuitive operation.
  • the digital signage 7300 or digital signage 7400 is preferably capable of cooperating with an information terminal 7311 or information terminal 7411 such as a smartphone possessed by the user through wireless communication.
  • advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411 .
  • display on the display portion 7000 can be switched.
  • the digital signage 7300 or 7400 can execute a game using the screen of the information terminal 7311 or 7411 as an operating means (controller). This allows an unspecified number of users to simultaneously participate in and enjoy the game.
  • the electronic device shown in FIGS. 33A to 33G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, sensors 9007 (force, displacement, position, speed , acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays , detection or measurement), a microphone 9008, and the like.
  • the display device described in any of the above embodiments can be preferably used for the display portion 9001 .
  • the electronic devices shown in FIGS. 33A to 33G have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a calendar, a function to display the date or time, a function to control processing by various software (programs), It can have a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device may be provided with a camera or the like, and may have a function of capturing a still image or moving image and storing it in a recording medium (external or built into the camera), a function of displaying the captured image on a display unit, and the like. .
  • FIGS. 33A to 33G Details of the electronic devices shown in FIGS. 33A to 33G will be described below.
  • FIG. 33A is a perspective view showing a mobile information terminal 9101.
  • the mobile information terminal 9101 can be used as a smart phone, for example.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display text and image information on its multiple surfaces.
  • FIG. 33A shows an example in which three icons 9050 are displayed.
  • Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display portion 9001 . Examples of the information 9051 include notification of incoming e-mail, SNS, phone call, title of e-mail or SNS, sender name, date and time, remaining battery power, radio wave intensity, and the like.
  • an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 33B is a perspective view showing the mobile information terminal 9102.
  • the portable information terminal 9102 has a function of displaying information on three or more sides of the display portion 9001 .
  • information 9052, information 9053, and information 9054 are displayed on different surfaces.
  • the user can confirm the information 9053 displayed at a position where the mobile information terminal 9102 can be viewed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of the clothes.
  • the user can check the display without taking out the portable information terminal 9102 from the pocket, and can determine, for example, whether to receive a call.
  • FIG. 33C is a perspective view showing the tablet terminal 9103.
  • the tablet terminal 9103 can execute various applications such as mobile phone, e-mail, reading and creating text, playing music, Internet communication, and computer games.
  • the tablet terminal 9103 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and connection terminals on the bottom. 9006.
  • FIG. 33D is a perspective view showing a wristwatch-type mobile information terminal 9200.
  • the mobile information terminal 9200 can be used as a smart watch (registered trademark), for example.
  • the display portion 9001 has a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also make hands-free calls by mutual communication with a headset capable of wireless communication, for example.
  • the portable information terminal 9200 can transmit data to and from another information terminal through the connection terminal 9006, and can be charged. Note that the charging operation may be performed by wireless power supply.
  • FIG. 33E to 33G are perspective views showing a foldable personal digital assistant 9201.
  • FIG. 33E is a state in which the portable information terminal 9201 is unfolded
  • FIG. 33G is a state in which it is folded
  • FIG. 33F is a perspective view in the middle of changing from one of FIGS. 33E and 33G to the other.
  • the portable information terminal 9201 has excellent portability in the folded state, and has excellent display visibility due to a seamless wide display area in the unfolded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055 .
  • the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
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  • Optics & Photonics (AREA)
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PCT/IB2023/051026 2022-02-17 2023-02-06 半導体装置、及び半導体装置の作製方法 Ceased WO2023156876A1 (ja)

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CN202380018329.8A CN118591888A (zh) 2022-02-17 2023-02-06 半导体装置及半导体装置的制造方法
US18/833,581 US20250151538A1 (en) 2022-02-17 2023-02-06 Semiconductor device and method for manufacturing the semiconductor device
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