WO2023151379A1

WO2023151379A1 - Ultraviolet lamp bead packaging structure and manufacturing method therefor

Info

Publication number: WO2023151379A1
Application number: PCT/CN2022/138986
Authority: WO
Inventors: 郭文平; 邓群雄; 韩奎
Original assignee: 元旭半导体科技(无锡)有限公司
Priority date: 2022-02-10
Filing date: 2022-12-14
Publication date: 2023-08-17
Also published as: CN114156389A; CN114156389B

Abstract

The present invention belongs to the technical field of LED packaging. Disclosed are an ultraviolet lamp bead packaging structure and a manufacturing method therefor. The ultraviolet lamp bead packaging structure comprises a substrate; first metal layers are provided on both a packaging surface and a back surface of the substrate; electrode areas of the first metal layers on the two surfaces are connected, and a Zener chip is provided on the electrode areas of the first metal layers on the packaging surface; the first metal layers on the packaging surface further have a peripheral area; second metal layers are respectively provided on the first metal layers of the multiple areas; the height of the electrode areas of the second metal layers is larger than/equal to the height of a peripheral area of the second metal layers and the height of the Zener chip, and a UVC chip is provided on the electrode areas of the second metal layers; a quartz lens is sealedly provided on the peripheral area of the second metal layers, the quartz lens wraps the UVC chip and the Zener chip, and UVC-resistant fillers fill between the quartz lens and the UVC chip and between the quartz lens and the Zener chip. According to the present invention, the light packaging efficiency and the air tightness of a lamp bead are greatly improved, and the antistatic breakdown and overvoltage protection performance of the packaging structure are greatly improved.

Description

A kind of ultraviolet lamp bead encapsulation structure and preparation method thereof

technical field

The invention relates to an ultraviolet lamp bead packaging structure and a preparation method thereof, belonging to the technical field of LED packaging.

Background technique

UVC (Ultra Violet C radiation) refers to short-wave ultraviolet light, and UVC light sources are often used in various fields such as medical treatment and pharmaceuticals. At present, the packaging methods of UVC LED are divided into organic packaging, semi-inorganic packaging and all-inorganic packaging; organic packaging uses organic materials such as silica gel, silicone resin or epoxy resin; all-inorganic packaging avoids the use of organic materials throughout the process. Welding, resistance welding, etc. to achieve the combination of the lens and the substrate; the semi-inorganic packaging uses organic silicon materials with glass and other inorganic materials, mainly composed of ceramic substrates, chips, brackets and quartz glass, and the chip is placed on the ceramic substrate. The positive and negative electrodes are connected to the bracket through wires, and the upper end of the bracket is coated with organic glue and connected to the quartz glass, and the packaging products in this way are still the mainstream in the domestic market.

The current UVC packaging structure usually includes two types. One is to generally use metal dams around the substrate for sealing, such as the UVC packaging structure of LED lamps disclosed in patent No. 201910079039.X and its preparation method, and the UVC packaging of LED lamps disclosed in patent No. 202022569493.4 structure, in this kind of packaging structure, the metal dam will lead to the absorption of light, reduce the packaging efficiency of light, and the light efficiency will be reduced by more than 30%, and the cavity between the chip and the quartz glass has a refractive index of 1, and the light from The sapphire (n=1.82), the light-emitting body of the chip, will have serious total reflection loss to the cavity, and the light from the chip cannot be extracted, while the light from the cavity passes through the high-transmittance cover plate, and then reaches the outside with a refractive index of 1. The structure with light loss and cavity seriously affects the light extraction efficiency of the package, that is, the light extraction efficiency of the package is extremely low; the other is to use high-transmittance and anti-UVC glue for direct packaging. It has certain advantages, but it cannot achieve effective water and oxygen isolation, and there is a problem of poor air tightness; in addition, UVC chips are relatively expensive, but the current UVC packaging structure has poor antistatic ability, no overvoltage protection, and low service life. high cost.

Therefore, the development of a new UV lamp bead packaging structure and its preparation method not only has urgent research value, but also has good economic benefits and industrial application potential, which is the driving force and basis for the completion of the present invention.

Contents of the invention

In order to overcome the defects of the prior art pointed out above, the present inventor has conducted in-depth research on this, and completed the present invention after paying a lot of creative work.

Specifically, the technical problem to be solved by the present invention is to provide a UV lamp bead packaging structure and its preparation method to solve the problems of light absorption or poor airtightness and low light packaging efficiency in the current UVC packaging structure. , and the technical problems of poor antistatic ability and no overvoltage protection.

In order to solve the problems of the technologies described above, the technical solution of the present invention is:

An ultraviolet lamp bead packaging structure, including a substrate, the packaging surface and the back surface of the substrate are provided with a first metal layer, the electrode regions of the first metal layer on both sides are connected, and the first metal layer on the packaging surface A Zener chip or a TVS chip is provided on the electrode area of the layer, and the first metal layer on the package surface also has a peripheral area surrounding its electrode area, and a second metal layer is respectively provided on the first metal layer in each area , the height of the electrode area of the second metal layer is greater than/equal to the height of its peripheral area and the Zener chip or TVS chip, and the electrode area of the second metal layer is provided with a UVC chip;

The second metal layer is sealed with a quartz lens through its peripheral area, and the quartz lens has an accommodation groove covering the UVC chip and the Zener chip or TVS chip, and the quartz lens and the UVC chip , The spaces between the Zener chips or TVS chips are filled with fillers with anti-UVC properties.

As an improved technical solution, the substrate is an aluminum nitride ceramic substrate.

As an improved technical solution, both the first metal layer and the second metal layer have a multilayer structure of Ni layer, Cu layer, Ni layer and Au layer.

As an improved technical solution, through holes are respectively opened at both ends of the substrate, and the electrode regions of the first metal layer and the second metal layer both include a P electrode region and an N electrode region, the The P electrode area and the N electrode area on the back of the substrate are respectively provided at both ends thereof, and a heat dissipation area is also provided between the P electrode area and the N electrode area on the back of the substrate;

The P electrode area of the first metal layer on the package surface of the substrate and the back side are connected through the through hole, and the N electrode area of the first metal layer on the package surface of the substrate and the back side are connected through the through hole. connect.

As an improved technical solution, each region of the second metal layer has the same thickness, and the thickness of the second metal layer is higher than the height of the Zener chip or TVS chip.

As an improved technical solution, an electrode identification gap is provided in the P electrode area of the first metal layer on the packaging surface of the substrate.

As an improved technical solution, a solder resist layer is provided between the P electrode area and the N electrode area on the back of the substrate and the heat dissipation area.

As an improved technical solution, the Zener chip or TVS chip is fixedly mounted on the first metal layer by means of gold-tin eutectic, solder paste or glue with conductive particles, and the Zener chip or TVS chip The positive and negative poles of the chip are respectively connected to the P electrode area and the N electrode area of the first metal layer;

The UVC chip is fixedly mounted on the second metal layer by means of gold-tin eutectic, solder paste or glue with conductive particles, and the positive and negative electrodes of the UVC chip are respectively connected to the P electrodes of the second metal layer. region is connected to the N electrode region.

As an improved technical solution, the peripheral area of the second metal layer is a zigzag structure with a glue collection tank, and the quartz lens contains silicone resin, epoxy resin, polyacrylate, polyamide and benzene And at least one of the cyclobutene glue is sealed and fixed on the second metal layer.

As an improved technical solution, the quartz lens includes a base installation part and a light shape modification part, and the quartz lens is fixedly installed on the second metal layer through the base installation part.

As an improved technical solution, the filler includes at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and organic glass solution.

The invention also discloses a method for preparing an ultraviolet lamp bead packaging structure, which includes the following steps:

S1. Provide a substrate, and open a through hole on the substrate to obtain structure I;

S2. Prepare the first metal layer on both sides of the structure I, the side with the peripheral area is the packaging surface, the side with the heat dissipation area is the back side, and the packaging side is connected to the electrode area of the first metal layer on the back side, to obtain Structure II;

S3. Prepare a second metal layer on the first metal layer on both sides of the substrate to obtain structure III;

S4. Prepare a solder resist layer between the electrode area and the heat dissipation area on the back of the structure III to obtain the structure IV;

S5. Connect and fix the Zener chip or TVS chip to the electrode area of the first metal layer on the packaging surface, and connect and fix the UVC chip to the electrode area of the second metal layer on the packaging surface to obtain a structure V;

S6. Coating glue on the peripheral area of the second metal layer, and preliminarily semi-curing the glue to obtain structure VI;

Simultaneously, a quartz lens with a holding groove is provided, and an anti-UVC filler is added into the holding groove of the quartz lens to obtain structure VII;

S7, reversely buckle the structure VI to the structure VII, and carry out lamination and curing to obtain the final packaging product.

As an improved technical solution, in step S2, the first metal layer is respectively prepared on both sides of the structure I, including:

A photoresist layer is formed on one side of structure I, and the photoresist layer is patterned by exposure and development processes, and then the side of the substrate with the patterned photoresist layer is evaporated or electroplated, and a layer is plated metal layer;

After the patterned photoresist is also made on the other side of the structure I, a metal layer is plated to obtain a structure coated with a metal layer on both sides, and the electrode regions of the metal layers on both sides are connected through the through holes;

The photoresist is stripped by a photoresist stripping process, and the photoresist layer is removed to obtain structure II.

As an improved technical solution, in step S5, the Zener chip or TVS chip is first placed on the electrode area of the first metal layer on the package surface, and the UVC chip is placed on the electrode area of the second metal layer on the package surface. In the electrode area, the eutectic welding of the chip on the metal layer is carried out by means of gold-tin eutectic to realize the fixation of the chip on the metal layer, and connect the positive and negative electrodes of the chip to the metal layer.

As an improved technical solution, in step S6, a glue solution containing at least one of silicone resin, epoxy resin, polyacrylate, polyamide and benzocyclobutene is applied to the second metal layer The top surface of the outer ring of the peripheral area, and then the glue is initially semi-cured;

Place the holding tank of the quartz lens facing upwards, and then fill the filling agent containing at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and plexiglass solution into the holding tank of the quartz lens .

After adopting above-mentioned technical scheme, the beneficial effect of the present invention is:

(1) The packaging structure of the ultraviolet lamp bead has no dam to realize the light blocking of the UVC chip, so that there is no light absorption when the packaging structure is working, which greatly improves the packaging efficiency of light, and is provided with a parallel connection with the UVC chip. The nanochip or TVS chip will not block the light of the UVC chip and realize overvoltage protection. At the same time, the anti-static breakdown performance of the package structure is greatly improved, and the service life of the UVC chip is extended. In addition, the package structure The high-transparency quartz lens is used as the seal, which improves the airtightness of the lamp bead, effectively realizes the isolation of water and oxygen, and has the effect of modifying the light shape. The gap between the quartz lens and the UVC chip, Zener chip or TVS chip is filled with The filler with anti-UVC properties has a refractive index between the light-emitting body of the chip (sapphire n=1.82) and the quartz lens (n=1.492), which reduces the loss of total reflection of light during propagation and improves the extraction of light efficiency.

(2) The packaging structure converts the positive and negative poles of the UVC chip and Zener chip or TVS chip to the back of the substrate, which can be used for SMD installation, making the installation of the UV lamp bead packaging structure on the pad more convenient. And occupy a smaller volume.

(3) The heat dissipation area provided on the back of the packaging structure realizes the separation of thermoelectricity, which greatly improves the heat dissipation effect of the packaged chip, thereby improving the performance and service life of the packaged chip.

(4) The first metal layer on the packaging surface of the substrate is provided with an electrode identification gap, which facilitates the identification of positive and negative electrodes when the packaging structure is installed and used.

(5) The solder resist layer provided on the back of the substrate can prevent the metal layers in the heat dissipation area from being connected together when the package structure is soldered and fixed on the pad, which facilitates the precise installation of the package structure.

(6) The peripheral area of the second metal layer is a back-shaped structure with a glue collection tank. When the substrate part coated with semi-cured glue is turned upside down on the quartz lens and pressed, the excess glue It will overflow into the glue collection tank, preventing the glue from overflowing into the package structure, thereby avoiding the impact on the package chip, and greatly improving the installation firmness and airtightness of the quartz lens.

(7) The filler filled between the quartz lens and the chip has good anti-UVC characteristics and long service life while improving the light extraction efficiency.

Description of drawings

In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the description of the specific embodiments or the prior art. Throughout the drawings, similar elements or parts are generally identified by similar reference numerals. In the drawings, elements or parts are not necessarily drawn in actual scale.

Fig. 1 is the structural representation of structure I of the present invention;

Fig. 2 is the structural representation of structure II of the present invention;

Fig. 3 is the cross-sectional structure schematic diagram of structure II of the present invention;

Fig. 4 is the structural representation of structure III of the present invention;

Fig. 5 is the schematic cross-sectional structure diagram of structure III of the present invention;

Figure 6 is a schematic structural view of Structure IV of the present invention;

Fig. 7 is a structural schematic diagram of structure V of the present invention;

Fig. 8 is a schematic cross-sectional structure diagram of structure V of the present invention;

Fig. 9 is another cross-sectional structural schematic diagram of structure V of the present invention;

Fig. 10 is a schematic structural view of structure VI of the present invention;

Fig. 11 is a schematic structural view of a quartz lens of the present invention;

Figure 12 is a schematic structural view of structure VII of the present invention;

Fig. 13 is a structural schematic diagram of an ultraviolet lamp bead packaging structure according to an embodiment of the present invention;

Fig. 14 is a schematic cross-sectional structural diagram of the A-A direction in Fig. 13;

Fig. 15 is a schematic cross-sectional structure diagram of the B-B direction of the present invention;

Fig. 16 is a schematic cross-sectional structural view of the packaging structure of the ultraviolet lamp bead provided in the fourth embodiment of the present invention;

Reference signs: 1-substrate; 101-through hole; 2-first metal layer; 201-electrode identification gap; 3-second metal layer; 301-glue collection tank; 4-solder resist layer; 5-Zener chip ; 6-UVC chip; 7-glue; 8-quartz lens; 801-holding tank; 802-base installation part;

Detailed ways

The present invention will be further described below in conjunction with specific examples. However, the uses and purposes of these exemplary embodiments are only used to illustrate the present invention, and do not constitute any form of limitation to the actual protection scope of the present invention, nor limit the protection scope of the present invention thereto.

Embodiment one

As shown in Figures 1 to 15, this embodiment provides a packaging structure for ultraviolet lamp beads, including a substrate 1, a first metal layer 2 is provided on the packaging surface and the back surface of the substrate 1, and the first metal layer 2 on both sides The electrode area of the package surface is connected, and the electrode area of the first metal layer 2 of the package surface is provided with a Zener chip 5, the first metal layer 2 of the package surface also has a peripheral area surrounding its electrode area, and the first metal layer of each area Layer 2 is provided with a second metal layer 3 respectively, the height of the electrode area of the second metal layer 3 is greater than/equal to the height of its peripheral area and the Zener chip 5, and the electrode area of the second metal layer 3 is provided with a UVC chip 6; the second metal layer 3 is sealed with a quartz lens 8 through its peripheral area, and the quartz lens 8 has a housing groove 801 covering the UVC chip 6 and the Zener chip 5, and the quartz lens 8 is connected to the UVC chip 6 and the Zener chip 5 The space is filled with a filler 9 with anti-UVC properties.

In this embodiment, the substrate 1 is made of insulating and high thermal conductivity material, and one of aluminum nitride, silicon carbide, silicon, and aluminum oxide can be selected; the substrate 1 in this embodiment is preferably an aluminum nitride ceramic substrate, and an aluminum nitride ceramic substrate It has high thermal conductivity, reliable insulation performance, and excellent chemical stability and thermal stability.

In this embodiment, both the first metal layer 2 and the second metal layer 3 have a multilayer structure of Ni layer, Cu layer, Ni layer and Au layer.

In this embodiment, the two ends of the substrate 1 are respectively provided with through holes 101, the electrode regions of the first metal layer 2 and the second metal layer 3 both include a P electrode region and an N electrode region, and the P electrode region on the back of the substrate 1 and N electrode areas are respectively arranged at its two ends, and a heat dissipation area is also provided between the P electrode area and the N electrode area on the back of the substrate 1; The holes 101 are connected, and the N electrode regions of the first metal layer 2 on the packaging surface of the substrate 1 and the back surface are connected through the through holes 101 .

In this embodiment, the thickness of each region of the second metal layer 3 is the same, and the thickness of the second metal layer 3 is higher than the height of the Zener chip 5, so that after the UVC chip 6 is installed, there will be no light blocking phenomenon.

In this embodiment, taking a substrate with a length of 3.8 mm, a width of 3.8 mm, and a thickness of 0.5 mm as an example, the diameter of the through hole 101 is 60-100 μm, preferably 80 μm, and the thickness of the first metal layer 2 is 50-70 μm, preferably The thickness of the second metal layer 3 is 110-130 μm, preferably 120 μm, and the distance between the P electrode region and the N electrode region on the same surface of the substrate is 90-110 μm, preferably 100 μm.

In this embodiment, the UVC chip 6 is a flip-chip whose length and width are both 1 mm, and its wave band is 200-295 nm.

In this embodiment, the P electrode area of the first metal layer 2 on the packaging surface of the substrate 1 is provided with an electrode identification gap 201 to facilitate the identification of positive and negative electrodes when the packaging structure is installed and used, as shown in FIG. 4 .

In this embodiment, a solder resist layer 4 is provided between the P electrode area, the N electrode area, and the heat dissipation area on the back of the substrate 1. When the package structure is soldered and fixed on the pad, the solder resist layer 4 can prevent the heat dissipation area from being damaged. The metal layers are connected together, which facilitates the precise installation of the package structure. As shown in Figure 6, the heat dissipation area is between the two solder resist layers 4, and the P electrode area and the N electrode area are on both sides.

In this embodiment, the Zener chip 5 is fixedly mounted on the first metal layer by means of gold-tin eutectic, and the positive and negative electrodes of the Zener chip 5 are respectively connected to the P electrode region and the N electrode region of the first metal layer 2 The UVC chip 6 is fixedly mounted on the second metal layer 3 by means of gold-tin eutectic, and the positive and negative electrodes of the UVC chip 6 are respectively connected to the P electrode area and the N electrode area of the second metal layer 3 .

In this embodiment, the peripheral area of the second metal layer 3 is a back-shaped structure with a glue collection tank 301, including a back-shaped inner ring metal and an outer ring metal, and a glue collection tank 301 between the inner and outer ring metals, and the quartz lens 8 Sealed and fixed on the second metal layer 3 through glue 7 containing at least one of silicone resin, epoxy resin, polyacrylate, polyamide and benzocyclobutene; the back-shaped periphery of the second metal layer 3 area, when the substrate portion coated with semi-cured glue is turned upside down on the quartz lens 8 and pressed together, the excess glue 7 will overflow into the glue collection tank 301 to prevent the glue 7 from overflowing into the The interior of the packaging structure avoids the impact on the packaging chip, and greatly improves the installation firmness and airtightness of the quartz lens 8 .

In this embodiment, as shown in FIG. 11 , the quartz lens 8 includes a base installation part 802 and a light shape modification part 803, the base installation part 802 is adapted to the external dimensions of the peripheral area of the second metal layer 3, and the quartz lens 8 passes through Its base mounting part 802 is fixedly mounted on the second metal layer 3; the light shape modification part 803 of the quartz lens 8 in this embodiment is a hemispherical structure, which has a good effect on light shape modification.

In this embodiment, the accommodation groove 801 of the quartz lens 8 is a conical structure, and the distance between the bottom surface of the accommodation groove 801 and the UVC chip 6 is 5-20 μm.

In this embodiment, the filler 9 includes at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and plexiglass solution, which has better anti-UVC characteristics and improves the light extraction efficiency. At the same time, it has a long service life.

This embodiment also provides a method for preparing the above-mentioned ultraviolet lamp bead packaging structure, including the following steps:

S1. A substrate 1 is provided, and a through hole 101 is opened on the substrate 1 to obtain a structure I, as shown in FIG. 1 ;

In this step, the equipment and process for opening holes in the substrate 1 are well known by those skilled in the art, and will not be repeated here.

S2. Prepare the first metal layer 2 on both sides of the structure I, the side with the peripheral area is the packaging surface, and the side with the heat dissipation area is the back side, and the packaging surface is connected to the electrode area of the first metal layer 2 on the back side, obtaining Structure II, as shown in Figure 2 and Figure 3 together;

In this step, a photoresist layer is first formed on one side of the structure I, and the photoresist layer is patterned through exposure and development processes, and then the side of the substrate 1 with the patterned photoresist layer is evaporated or electroplated, and then plated a metal layer;

After that, patterned photoresist is also made on the other side of structure I, and then a metal layer is plated to obtain a structure with metal layers on both sides. When metal layers are plated on both sides of structure I, the plated metal will fill into the through hole 101, so that the electrode regions of the metal layers on both sides are connected through the through hole 101, as shown in Figure 3;

Finally, the photoresist is stripped through the photoresist stripping process to remove the photoresist layer. When the photoresist is stripped, the metal layer plated on the photoresist will be removed with the photoresist stripping, leaving the metal layer plated on the substrate. on the first metal layer 2.

S3. Prepare a second metal layer 3 on the first metal layer 2 on both sides of the substrate 1 to obtain a structure III, as shown in FIG. 4 and FIG. 5 ;

In this step, the preparation process of the second metal layer 3 is the same as the preparation process of the first metal layer 2 in step 2. Similarly, a layer of metal layer is first prepared on one side using a patterned photoresist process, evaporation or electroplating process, Then, on the other side, a metal layer is prepared by a patterned photoresist process, evaporation or electroplating process. After the metal layers on both sides are prepared, the second metal layer 3 is finally obtained by a photoresist stripping process. The second metal layer 3 The thickness is greater than the thickness of the first metal layer 2, and the peripheral area of the second metal layer 3 on the packaging surface is a zigzag structure, including an inner ring, an outer ring, and a glue collection groove 301 formed between the inner and outer rings.

S4. Prepare a solder resist layer 4 between the electrode area and the heat dissipation area on the back of the structure III to obtain the structure IV, as shown in FIG. 6 ;

In this step, the solder resist layer 4 and its preparation process are understood by those skilled in the art, so details will not be described here.

S5. Connect and fix the Zener chip 5 to the electrode area of the first metal layer 2 on the packaging surface, respectively connect the P electrode area and the N electrode area of the first metal layer 2, and connect and fix the UVC chip 6 to the second electrode area of the packaging surface. The electrode area of the metal layer 3 is respectively connected to the P electrode area and the N electrode area of the second metal layer 3 to obtain a structure V, as shown in Figure 7 to Figure 9;

In this step, the Zener chip 5 is first placed on the electrode area of the first metal layer 2 on the packaging surface, and the UVC chip 6 is placed on the electrode area of the second metal layer 3 on the packaging surface, and then through the gold-tin eutectic The eutectic welding of the chip on the metal layer is carried out to realize the fixation of the chip on the metal layer, and the positive and negative electrodes of the chip are respectively connected to the P electrode area and the N electrode area of the metal layer; in structure V, the Zener chip 5 Connected with UVC chip 6 in parallel.

S6. Coating the glue 7 on the peripheral area of the second metal layer 3, and preliminarily semi-curing the glue 7 to obtain the structure VI, as shown in FIG. 8. Add anti-UVC filler 9 into the accommodation groove 801 of the quartz lens 8 to obtain structure VII, as shown in FIG. 12 ;

In this step, the glue solution 7 containing at least one of silicone resin, epoxy resin, polyacrylate, polyamide and benzocyclobutene is applied to the top surface of the outer ring of the peripheral region of the second metal layer 3 , and then preliminarily semi-cured the glue solution 7 to realize the preparation of structure VI;

Place the accommodating groove 801 of the quartz lens 8 facing up, and then fill the quartz lens 8 with a filler 9 comprising at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and organic glass solution In the holding tank 801 of the structure VII is realized.

S7. The structure VI is buckled upside down to the structure VII, and then pressed and solidified to obtain the final packaged product, as shown in FIG. 13 to FIG. 15 .

In this step, the base mounting part 802 of the quartz lens 8 is turned upside down against the peripheral area of the second metal layer 3. During the pressing process, the excess glue 7 will overflow into the glue collection tank 301 without overflowing. into the interior of the package structure.

In this embodiment, the Zener chip 5 connected in parallel with the UVC chip 6 can also be replaced by a TVS chip. Both the Zener chip and the TVS chip connected in parallel with the UVC chip have good anti-static breakdown and overvoltage protection functions.

The ultraviolet lamp bead packaging structure prepared based on the above method has no dam for UVC chip 6 to block light, so that the packaging structure has no light absorption during operation, greatly improving the packaging efficiency of light, and is provided with UVC chip 6. The Zener chip 5 or TVS chip connected in parallel will not block the UVC chip 6 while realizing overvoltage protection, and at the same time greatly improve the anti-static breakdown performance of the package structure, prolonging the service life of the UVC chip. In addition, the packaging structure uses a highly transparent quartz lens 8 as a seal, which improves the airtightness of the lamp bead, effectively realizes the isolation of water and oxygen, and has the effect of modifying the light shape. The quartz lens 8 and the UVC chip 6, Zener The anti-UVC filler 9 filled between the chips 5 has a refractive index value between the light-emitting body of the chip (sapphire n=1.82) and the quartz lens (n=1.492), which reduces the total reflection of light during propagation loss, improving the light extraction efficiency.

In addition, the packaging structure converts the positive and negative poles of the UVC chip 6 and the Zener chip 5 to the back of the substrate 1, which can be used for patch mounting, making the installation of the UV lamp bead packaging structure on the pad more convenient, and The footprint is smaller; the heat dissipation area on the back of the packaging structure realizes the separation of thermoelectricity, which greatly improves the heat dissipation effect of the packaged chip, thereby improving the performance and service life of the packaged chip.

Embodiment two

This embodiment is the same as the UV lamp bead packaging structure in Embodiment 1, the difference is that the Zener chip 5 in this embodiment is fixedly mounted on the first metal layer 2 through solder paste, and the positive side of the Zener chip 5 The negative electrode is connected to the P electrode area and the N electrode area of the first metal layer 2 respectively; the UVC chip 6 is fixedly mounted on the second metal layer 3 through solder paste, and the positive and negative electrodes of the UVC chip are respectively connected to the second metal layer 3 The P electrode area and the N electrode area are connected.

In this embodiment, the preparation method of the UV lamp bead packaging structure is the same as that of Embodiment 1, the difference is that in step S5, the Zener chip 5 and the UVC chip 6 are placed on the first metal layer 2 respectively through solder paste. The electrode area and the electrode area of the second metal layer 3 are reflow soldered to realize the fixation of the chip on the metal layer, and the positive and negative electrodes of the chip are respectively connected to the P electrode area and the N electrode area of the metal layer.

Embodiment three

This embodiment is the same as the UV lamp bead packaging structure in Embodiment 1, the difference is that in this embodiment, the Zener chip 5 is fixedly mounted on the first metal layer 2 through the glue with conductive particles, and the Zener chip 5 The positive and negative electrodes of the UVC chip 6 are respectively connected to the P electrode area and the N electrode area of the first metal layer 2; It is connected with the P electrode area and the N electrode area of the second metal layer 3 .

In this embodiment, the preparation method of the ultraviolet lamp bead packaging structure is the same as that of Embodiment 1, the difference is that in step S5,

First, the Zener chip 5 and the UVC chip 6 are respectively placed on the electrode area of the first metal layer 2 and the electrode area of the second metal layer 3 through the glue with conductive particles, and then the glue with conductive particles is cured to realize the chip on the Fixing on the metal layer, the conductive particles of the glue will connect the positive and negative electrodes of the chip to the P electrode area and the N electrode area of the metal layer respectively.

In this embodiment, the glue with conductive particles is preferably conductive silver glue.

Embodiment four

As shown in FIG. 16 , the packaging structure of this embodiment is the same as that of the ultraviolet lamp bead in Embodiment 1, except that the top of the quartz lens 8 in this embodiment is a planar structure.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims

An ultraviolet lamp bead packaging structure, including a substrate, characterized in that: the packaging surface and the back surface of the substrate are provided with a first metal layer, the electrode regions of the first metal layer on both sides are connected, and all the packaging surfaces A zener chip or a TVS chip is provided on the electrode area of the first metal layer, and the first metal layer on the packaging surface also has a peripheral area surrounding the electrode area, and the first metal layer in each area is respectively provided with The second metal layer, the height of the electrode area of the second metal layer is greater than/equal to the height of its peripheral area and the Zener chip or TVS chip, and the electrode area of the second metal layer is provided with a UVC chip;

The second metal layer is sealed with a quartz lens through its peripheral area, and the quartz lens has an accommodation groove covering the UVC chip and the Zener chip or TVS chip, and the quartz lens and the UVC chip , The spaces between the Zener chips or TVS chips are filled with fillers with anti-UVC properties.
The packaging structure of the ultraviolet lamp bead according to claim 1, characterized in that: through holes are respectively opened at the two ends of the substrate, and the electrode regions of the first metal layer and the second metal layer include P An electrode area and an N electrode area, the P electrode area and the N electrode area on the back of the substrate are respectively arranged at both ends thereof, and a heat dissipation area is also provided between the P electrode area and the N electrode area on the back of the substrate;

The P electrode area of the first metal layer on the package surface of the substrate and the back side are connected through the through hole, and the N electrode area of the first metal layer on the package surface of the substrate and the back side are connected through the through hole. connect.
The ultraviolet lamp bead packaging structure according to claim 2, characterized in that: an electrode identification gap is opened in the P electrode area of the first metal layer on the packaging surface of the substrate;

A solder resist layer is provided between the P electrode area, the N electrode area and the heat dissipation area on the back of the substrate.
The packaging structure of ultraviolet lamp bead according to claim 3, characterized in that: the Zener chip or TVS chip is fixedly mounted on the first metal layer by means of gold-tin eutectic, solder paste or glue with conductive particles , and the positive and negative poles of the Zener chip or TVS chip are respectively connected to the P electrode area and the N electrode area of the first metal layer;

The UVC chip is fixedly mounted on the second metal layer by means of gold-tin eutectic, solder paste or glue with conductive particles, and the positive and negative electrodes of the UVC chip are respectively connected to the P electrodes of the second metal layer. region is connected to the N electrode region.
The ultraviolet lamp bead packaging structure according to claim 4, wherein the peripheral area of the second metal layer is a zigzag structure with a glue collection tank, and the quartz lens contains silicone resin and epoxy resin. The glue solution of at least one of polyacrylate, polyamide and benzocyclobutene is sealed and fixed on the second metal layer.
The packaging structure of the ultraviolet lamp bead according to claim 5, wherein the filler comprises at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and plexiglass solution.
A method for preparing the ultraviolet lamp bead packaging structure according to claim 1, comprising the steps of:

S1. Provide a substrate, and open a through hole on the substrate to obtain structure I;

S2. Prepare the first metal layer on both sides of the structure I, the side with the peripheral area is the packaging surface, the side with the heat dissipation area is the back side, and the packaging side is connected to the electrode area of the first metal layer on the back side, to obtain Structure II;

S3. Prepare a second metal layer on the first metal layer on both sides of the substrate to obtain structure III;

S4. Prepare a solder resist layer between the electrode area and the heat dissipation area on the back of the structure III to obtain the structure IV;

S5. Connect and fix the Zener chip or TVS chip to the electrode area of the first metal layer on the packaging surface, and connect and fix the UVC chip to the electrode area of the second metal layer on the packaging surface to obtain a structure V;

S6. Coating glue on the peripheral area of the second metal layer, and preliminarily semi-curing the glue to obtain structure VI;

Simultaneously, a quartz lens with a holding groove is provided, and a filler with anti-UVC properties is added into the holding groove of the quartz lens to obtain structure VII;

S7. The structure VI is buckled upside down to the structure VII, and pressed and solidified to obtain the final packaging product.
The preparation method of the ultraviolet lamp bead packaging structure as claimed in claim 7, characterized in that: in step S2, preparing the first metal layer respectively on both sides of the structure I comprises:

A photoresist layer is formed on one side of structure I, and the photoresist layer is patterned by exposure and development processes, and then the side of the substrate with the patterned photoresist layer is evaporated or electroplated, and a layer is plated metal layer;

After the patterned photoresist is also made on the other side of the structure I, a metal layer is plated to obtain a structure coated with a metal layer on both sides, and the electrode regions of the metal layers on both sides are connected through the through holes;

The photoresist is stripped by a photoresist stripping process, and the photoresist layer is removed to obtain structure II.
The preparation method of the ultraviolet lamp bead packaging structure according to claim 8, characterized in that: in step S5, the Zener chip or TVS chip is first placed on the electrode area of the first metal layer on the packaging surface, and the UVC chip placed on the electrode area of the second metal layer on the package surface, and then carry out the eutectic welding of the chip on the metal layer through the gold-tin eutectic method, so as to realize the fixing of the chip on the metal layer, and connect the positive and negative sides of the chip connected to the metal layer.
The preparation method of the ultraviolet lamp bead packaging structure as claimed in claim 9, characterized in that: in step S6, at least one of silicone resin, epoxy resin, polyacrylate, polyamide and benzocyclobutene will be included The glue solution is applied to the top surface of the outer ring of the peripheral area of the second metal layer, and then the glue solution is initially semi-cured;

Place the holding tank of the quartz lens facing upwards, and then fill the filling agent containing at least one of silica gel, epoxy resin, silicone resin, fluororesin, molded glass solution, and plexiglass solution into the holding tank of the quartz lens .