WO2023142765A1 - 射频前端模组和射频系统 - Google Patents

射频前端模组和射频系统 Download PDF

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Publication number
WO2023142765A1
WO2023142765A1 PCT/CN2022/139644 CN2022139644W WO2023142765A1 WO 2023142765 A1 WO2023142765 A1 WO 2023142765A1 CN 2022139644 W CN2022139644 W CN 2022139644W WO 2023142765 A1 WO2023142765 A1 WO 2023142765A1
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Prior art keywords
module
radio frequency
power supply
network
frequency signal
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PCT/CN2022/139644
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English (en)
French (fr)
Inventor
陈锋
仝林
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Oppo广东移动通信有限公司
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Publication of WO2023142765A1 publication Critical patent/WO2023142765A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H04W88/06—Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals

Definitions

  • the present application relates to the technical field of antennas, in particular to a radio frequency front-end module and a radio frequency system.
  • a dual connection mode of 4G signals and 5G signals is usually used in a Non-Standalone (NSA) mode.
  • NSA Non-Standalone
  • a power supply module with a built-in boost circuit is used to supply power to the radio frequency circuits used to support the amplification and processing of 4G signals and 5G signals respectively, which is costly.
  • a radio frequency front-end module and a radio frequency system are provided.
  • the embodiment of the present application provides a radio frequency front-end module, including:
  • a first power supply module configured to provide a first power supply voltage
  • a second power supply module configured to provide a second power supply voltage
  • the first transmission module is configured with a first power supply port and a second power supply port for connecting with the first power supply module, wherein the first transmission module is configured with a first transmission path and a second transmission path, wherein , the first transmission channel is configured to be connected to the first power supply port, and is used to support the transmission amplification processing of the received low-frequency signal of the first network under the action of the first power supply voltage, and the second transmission The path is configured to be connected to the second power supply port, and is used to support the transmission and amplification processing of the received first high-frequency signal of the first network under the action of the first power supply voltage;
  • the radio frequency processing circuit is connected to the second power supply module, and is used to support the transmission processing of the received low frequency signal of the second network and the intermediate frequency signal of the second network under the action of the second power supply voltage; wherein , the first power supply voltage is greater than the second power supply voltage.
  • the embodiment of the present application provides a radio frequency system, including:
  • the first radio frequency processing circuit and the radio frequency processing circuit are respectively connected to the radio frequency transceiver.
  • the above radio frequency front-end module and radio frequency system can make the first transmission module and the radio frequency processing circuit work simultaneously by setting the first power supply module and the second power supply module to supply power to the first transmission module and the radio frequency processing circuit in one-to-one correspondence, and then can Make the RF front-end module output two signals with different networks at the same time to support the amplification of 4G LTE signals and 5G NR signals, and then realize the dual connection of 4G LTE signals and 5G NR signals.
  • the first transmission module can also support the transmission and amplification processing of the low-frequency signal of the first network under the action of the first power supply voltage.
  • the radio frequency processing circuit does not need to support the radio frequency signal of the first network, such as the transmission processing of the 5G NR frequency band signal, which can avoid the built-in boost circuit in the second power supply module, and can adopt the second power supply voltage lower than the first power supply voltage
  • the radio frequency processing circuit there is no need to specially design the power amplifier unit in the first transmitting module and the radio frequency processing circuit.
  • the cost of the radio frequency front-end module provided in the embodiment of the application is low, and it can also improve the low frequency signal transmission performance.
  • Fig. 1 is one of framework schematic diagrams of radio frequency front-end module in an embodiment
  • Fig. 2 is the second frame schematic diagram of the radio frequency front-end module in an embodiment
  • Fig. 3 is the third schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • Fig. 4 is the frame diagram four of radio frequency front-end module in an embodiment
  • Fig. 5 is the fifth schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • Fig. 6 is the sixth schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • FIG. 7 is the seventh schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • Figure 8 is the eighth schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • Fig. 9 is the ninth schematic diagram of the framework of the radio frequency front-end module in an embodiment
  • Fig. 10 is a schematic structural diagram of a communication device provided with a radio frequency system in an embodiment.
  • first, second and the like used in this application may be used to describe various elements herein, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element.
  • a first antenna could be termed a second antenna, and, similarly, a second antenna could be termed a first antenna, without departing from the scope of the present application.
  • Both the first antenna and the second antenna are antennas, but they are not the same antenna.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • plural means at least two, such as two, three, etc., unless otherwise specifically defined.
  • severeal means at least one, such as one, two, etc., unless otherwise specifically defined.
  • the radio frequency front-end module involved in the embodiment of the present application can be applied to a radio frequency system with a wireless communication function, and the radio frequency system can be applied to a communication device.
  • the communication device may be a handheld device, a vehicle-mounted device, a wearable device, a computing device or other processing device connected to a wireless modem, and various forms of user equipment (User Equipment, UE) (for example, a mobile phone), a mobile station (Mobile Station, MS) and so on.
  • UE User Equipment
  • MS Mobile Station
  • An embodiment of the present application provides a radio frequency front-end module.
  • the radio frequency front-end module provided by the embodiment of the present application is configured to support the non-independent networking working mode of 5G NR and the long term evolution network (long term evolution, LTE) working mode supporting 4G LTE. That is to say, the radio frequency front-end module provided by the embodiment of the present application can work in non-independent networking NSA working mode and LTE working mode (or called LTE only working mode).
  • the non-independent networking working mode includes any one of EN-DC, NE-DC and NGEN-DC architectures.
  • the EN-DC architecture is used as an example for illustration.
  • E stands for Evolved-Universal Mobile Telecommunications System Terrestrial Radio Access (E-UTRA), representing 4G wireless access of mobile terminals
  • N stands for New Radio (NR), representing mobile The 5G wireless connection of the terminal
  • DC stands for Dual Connectivity, representing the dual connection of 4G and 5G.
  • E-UTRA Evolved-Universal Mobile Telecommunications System Terrestrial Radio Access
  • NR New Radio
  • DC Dual Connectivity, representing the dual connection of 4G and 5G.
  • the RF front-end module can realize dual connections with 4G base stations and 5G base stations at the same time.
  • the RF front-end module in order to meet the configuration requirements of the EN-DC combination between different frequency bands of 4G LTE signals and 5G NR signals, in the RF front-end module, two power supply modules including boost circuits are used to process different RF signals respectively. Circuit power supply, its cost is high.
  • the power amplifier unit in the RF processing circuit must be specially designed, for example, the power The amplifying unit adopts a power combining method to perform power combining processing on the radio frequency signals of each frequency band, which can reduce the voltage value of each supply voltage under the premise of meeting the output power level, but it will increase the complexity and cost of the power amplifier unit.
  • the RF front-end module 10 provided by the embodiment of the present application includes: a first power supply module 110 , a second power supply module 120 , a first transmission module 130 and a radio frequency processing circuit 140 .
  • the first power supply module 110 is used for providing a first power supply voltage
  • the second power supply module 120 is used for providing a second power supply voltage, wherein the first power supply voltage is greater than the second power supply voltage
  • both the first power supply module 110 and the second power supply module 120 may include a power management chip (Power management IC, PMIC).
  • the first transmitting module 130 is configured with a first power supply port VCC1 and a second power supply port VCC2 for connecting with the first power supply module 110 .
  • the first transmission module 130 is configured with a first transmission channel TX1 and a second transmission channel TX2, wherein the first transmission channel TX1 is configured to be connected to the first power supply port VCC1, and is used for , supporting the transmission amplification processing of the received low-frequency signal of the first network.
  • the second transmission channel TX2 is configured to be connected to the second power supply port VCC2, and is used to support the transmission and amplification processing of the received first high-frequency signal of the first network under the action of the first power supply voltage.
  • the radio frequency processing circuit 140 is connected with the second power supply module 120, and is configured to support the transmission processing of the received low frequency signal of the second network and the intermediate frequency signal of the second network under the action of the second power supply voltage.
  • the low frequency signal of the first network received by the first transmitting module 130 and the low frequency signal and intermediate frequency signal of the second network received by the radio frequency processing circuit 140 are respectively provided by the radio frequency transceiver 20 .
  • the signals processed by the first radio frequency processing circuit 130 and the second radio frequency processing circuit 140 can be radiated to free space through the antenna.
  • the first power supply module 110 can supply power to the first transmitting module 130 .
  • the second power supply module 120 can supply power to the radio frequency processing circuit 140 .
  • the first transmitting module 130 and the radio frequency processing circuit 140 can respectively perform power amplification and other processing on the received radio frequency signals under the action of the corresponding power supply voltage to realize the transmission processing of the received radio frequency signals.
  • the signal processed by the first transmitting module 130 and the radio frequency processing circuit 140 can be radiated to free space through the antenna.
  • the first network may be a 5G network, wherein the radio frequency signal of the first network may be called a new air interface (New Radio, NR) signal, that is, a 5G NR signal.
  • the second network may be a 4G network, wherein the radio frequency signal of the second network may be called a Long Term Evolution (Long Term Evolution, LTE) signal, that is, a 4G LTE signal.
  • LTE Long Term Evolution
  • the frequency band division of the low frequency signal, the intermediate frequency signal, the first high frequency signal (also called high frequency signal) and the second high frequency signal (also called ultra high frequency signal) is shown in Table 1.
  • Table 1 is the frequency band division table for low frequency signal, intermediate frequency signal, first high frequency signal and second high frequency signal
  • the 5G network will continue to use the frequency band used by 4G, and only the identification before the serial number will be changed.
  • the 5G network has added some ultra-high frequency bands that are not available in the 4G network, such as N77, N78, and N79.
  • the first transmission module 130 and the radio frequency processing circuit 140 can work simultaneously , so that the RF front-end module 10 can simultaneously output two signals with different networks to support the amplification of the 4G LTE signal and the 5G NR signal, and then realize the dual connection of the 4G LTE signal and the 5G NR signal.
  • the first signal is a signal amplified and processed by the first transmitting module 130, for example, the first high-frequency signal of the first network.
  • the second signal is a signal processed by the radio frequency processing circuit 140, for example, a low frequency signal of the second network and/or an intermediate frequency signal of the second network. Therefore, the combination of the first signal and the second signal can meet the configuration requirements of different EN-DC combinations between 4G LTE signals and 5G NR signals, as shown in Table 2.
  • Table 2 is the configuration table of different EN-DC combinations between 4G LTE signals and 5G NR signals
  • the radio frequency front-end module 10 can be configured to support the first high-frequency signal and the second high-frequency signal (for example, N41, N78, etc. of 5G NR) of the first network and the target signal of the second network (for example, the signal of 4G LTE) Low frequency signal or/and intermediate frequency signal) dual connection non-independent networking working mode.
  • the first high-frequency signal and the second high-frequency signal for example, N41, N78, etc. of 5G NR
  • the target signal of the second network for example, the signal of 4G LTE) Low frequency signal or/and intermediate frequency signal
  • the radio frequency front-end module 10 of the embodiment of the present application includes a first power supply module 110, a second power supply module 120, a first transmission module 130 and a radio frequency processing circuit 140, wherein the first power supply module 110 and the second power supply module 120 can be respectively One-to-one correspondence supplies power to the first transmission module 130 and the radio frequency processing circuit 140, which can support simultaneous amplification of 4G LTE signals and 5G NR signals, and then can realize dual transmission functions of 4G LTE signals and 5G NR signals without conflicting with each other , which can meet the configuration requirements of EN-DC combination between different frequency bands of 4G LTE signal and 5G NR signal.
  • the first transmitting module 130 can also support the transmission and amplification processing of the low-frequency signal of the first network under the action of the first power supply voltage.
  • the radio frequency processing circuit 140 does not need to support the radio frequency signal of the first network, for example, does not need to support the transmission processing of the 5G NR frequency band signal.
  • the second power supply voltage of the voltage supplies power to the radio frequency processing circuit 140, which can avoid the built-in booster circuit in the second power supply module 120, that is, it does not need to carry out the power amplification unit in the first transmitting module 130 and the radio frequency processing circuit 140.
  • the radio frequency front-end module 10 provided in the embodiment of the present application can reduce the cost, and can also improve the transmission performance of low-frequency signals.
  • the first power supply module 110 adopts an envelope tracking (Envelope Tracking, ET) power supply mode to provide the first power supply voltage.
  • the first power supply module 110 may include RF PMIC#1, and RF PMIC#1 includes a boost circuit, and the output voltage of RF PMIC#1 is greater than the input voltage of RF PMIC#1.
  • the second power supply module 120 provides a second power supply voltage in an average power tracking (Average Power Tracking, APT) power supply mode. Wherein the second power supply module 120 may include RF PMIC#2, RF PMIC#2 does not include a boost circuit, and the output voltage of RF PMIC#2 is less than or equal to the input voltage of RF PMIC#2. At the same time, the output voltage of RF PMIC#1 is greater than the output voltage of RF PMIC#2.
  • the radio frequency processing circuit 140 does not need to support the transmission processing of the radio frequency signal of the first network, and the power supply through the ordinary average power tracking power supply mode (without boost function) can meet the requirements for the signal of the second network. RF performance.
  • the first transmitting module 130 is powered by an envelope tracking power supply module (with a boost function), which ensures the radio frequency performance of the first network signal. In this way, the built-in boost circuit in the second power supply module 120 can be avoided, and no special design is required for the power amplifying unit in the first transmitting module 130 and the radio frequency processing circuit 140.
  • the radio frequency front-end module provided in the embodiment of this application 10 can reduce costs.
  • the first transmitting module 130 is also configured with a third transmitting channel, and the third transmitting channel is configured to be connected to the second power supply port VCC2 for Under the action, the transmission amplification processing of the received intermediate frequency signal of the first network is supported.
  • the intermediate frequency signals of the first network include but are not limited to frequency bands such as N1, N3, N2, N7, N34, and N39.
  • the first transmission module 130 can be used to support the transmission processing of the low-frequency signal, the intermediate-frequency signal and the first high-frequency signal of the first network, that is, it can support the transmission amplification processing of the full frequency band of the 5G NR signal , which can improve the transmission performance of the RF front-end module for 5G NR signals.
  • the radio frequency front-end module further includes a switch module 150 connected to the first transmitting module 130 and the first antenna ANT1 respectively.
  • the first transmitting module 130 is also configured with a first input port, a second input port, and a third input port for connecting with a radio frequency transceiver, and a first antenna port, a second antenna port, and a third input port connected with the switch module 150
  • the antenna port, the switch module 150 is used to select and conduct the signals transmitted by the first antenna port, the second antenna port and the third antenna port to the first antenna ANT1.
  • the switch module 150 in FIG. 3 may be omitted, and correspondingly, each antenna port may be connected to one antenna.
  • the first transmitting module 130 includes: a first transmitting amplifying unit 131 , a second transmitting amplifying unit 132 and a third transmitting amplifying unit 133 .
  • the first transmitting amplifying unit 131 performs power amplification on the low-frequency signal of the first network received by the first input port, and the low-frequency signal after power amplification processing is transmitted to the switch module 150 through the first antenna port, so as to realize the low-frequency signal launch processing.
  • the first input port, the first transmitting amplifying unit 131 and the first antenna port may constitute the first transmitting path TX1.
  • the second transmitting amplifying unit 132 performs power amplification on the intermediate frequency signal of the first network received by the second input port, and the intermediate frequency signal after the power amplification process is transmitted to the switch module 150 through the second antenna port, so as to realize the transmission processing of the intermediate frequency signal .
  • the second input port, the second transmission amplifying unit 132 and the second antenna port may constitute the second transmission path TX2.
  • the third transmission amplifying unit 133 performs power amplification on the first high-frequency signal of the first network received by the third input port, and the first high-frequency signal after power amplification is transmitted to the switch module 150 through the third antenna port to realize Transmitting processing of the first high-frequency signal.
  • the third input port, the third transmitting amplifying unit 133, and the third antenna port may constitute a third transmitting path.
  • the first transmitting amplifying unit 131 , the second transmitting amplifying unit 132 and the third transmitting amplifying unit 133 may include power amplifiers and switches, so as to implement power amplification processing on received signals.
  • the number of the first antenna port, the second antenna port and the third antenna port is multiple.
  • the first transmitting module 130 may be a multi-band multi-mode power amplifier (MMPA) with built-in multiple amplifying units.
  • MMPA multi-band multi-mode power amplifier
  • Each port configured on the first transmitting module 130 can be understood as a radio frequency pin of a multi-frequency multi-mode amplifier.
  • the first transmitting module 130 can be a phase 5N MMPA device, which integrates a power amplifier for supporting low-frequency, medium-frequency and high-frequency signals of the first network, and can realize low-, medium- and high-band WCDMA signals, LTE signals As well as the amplified output of 5G NR signals, it can also support the transmission processing of 41 signals and the frequency recombination of other 5G NR low, medium and high frequency bands.
  • the transmitting function of N41 can be realized through the first transmitting module 130, such as a phase 5N MMPA device, and the use of an external N41 power amplifier switch module integrated with a filter and a low-noise amplifier in the related art can be avoided.
  • LNA-PA ASM module with integrated filter, referred to as LPAF LNA-PA ASM module with integrated filter, referred to as LPAF
  • first transmitting amplifying unit 131, the second transmitting amplifying unit 132 and the third transmitting amplifying unit 133 can be integrated in the first transmitting module 130, which can further improve the integration degree of the radio frequency front-end module 10, which is beneficial to the radio frequency front-end module 10 Miniaturized design.
  • the radio frequency front-end module further includes: a first receiving module 160 .
  • the first receiving module 160 is connected with the switch module 150, and is used for supporting the receiving and processing of the received low frequency signal of the first network, the intermediate frequency signal of the first network and the first high frequency signal of the first network.
  • the first receiving module 160 may specifically include a plurality of low noise amplifiers, filters, duplexers, switches, etc. for supporting different frequency bands.
  • the first receiving module 160 may be a radio frequency low noise amplifier module (Low noise amplifier front end module, LFEM), and may also be a diversity receiving module (Diversity Receive Module with Antenna) with an antenna switch module and a filter.
  • Switch Module and SAW, DFEM can also be a multi-band low noise amplifier (Multi band Low Noise Amplifier, MLNA) and so on.
  • MLNA Multi band Low Noise Amplifier
  • the radio frequency front-end module can support the receiving and processing of the low frequency signal of the first network, the intermediate frequency signal of the first network and the first high frequency signal of the first network, and then It can improve the reception performance of 5G NR signals.
  • the radio frequency front-end module further includes a first radio frequency processing module 170 .
  • the first radio frequency processing module 170 is configured with a third power supply port VCC3 connected to the first power supply module 110 .
  • the first radio frequency processing module 170 is configured to support the transmission processing of the received second high frequency signal of the first network under the action of the first power supply voltage and output the second high frequency signal to the second antenna ANT2.
  • the first radio frequency processing module 170 is configured to support power amplification and filter processing of the second high frequency signal, and output the filtered second high frequency signal to the second antenna ANT2.
  • the first radio frequency processing module 170 may not only support the transmission processing of the second high frequency signal, but also support the reception processing of the second high frequency signal.
  • the second high-frequency signal is an N78 frequency band signal as an example for description.
  • the first radio frequency processing module 170 can be understood as a transceiver module for supporting N78 frequency band signals.
  • the first radio frequency processing module 170 can be N78 LPAF, which integrates power amplifiers, filters, low noise amplifiers, couplers and switches that can support N78 signals, so as to realize the reception and amplification processing of N78 frequency band signals.
  • Each port configured on the first radio frequency processing module 170 may be understood as a radio frequency pin of the LPAF.
  • the radio frequency front-end module 10 can be configured to support the first high-frequency signal and the second high-frequency signal of the first network (for example, N41, N78, etc. of 5G NR) and the second network.
  • Low-frequency signals and/or intermediate-frequency signals for example, low-frequency signals or/and intermediate-frequency signals of 4G LTE signals
  • Table 3 Table 3.
  • Table 3 is the configuration table of different EN-DC combinations between 4G LTE signals and 5G NR signals
  • the first radio frequency processing module 170 adopts an independent integrated device, such as an LPAF device, which can further improve the integration degree of the radio frequency front-end module 10 and facilitate the miniaturization design of the radio frequency front-end module 10 .
  • the radio frequency processing circuit 140 includes: a third transmitting module 141 and a fourth transmitting module 142 .
  • the third transmitting module 141 is configured with a fourth power supply port VCC4 and a fifth power supply port VCC5 for connecting with the second power supply module 120 .
  • the third transmitting module 141 includes: a fourth transmitting amplifying unit 1411 and a fifth transmitting amplifying unit 1412 .
  • the fourth transmitting and amplifying unit 1411 is connected to the second power supply module 120 through the fourth power supply port VCC4, and is used to support the transmitting and amplifying processing of the low-frequency signal of the second network.
  • the low frequency signals of the second network may include but not limited to B5, B8 and other frequency band signals.
  • the fifth transmitting and amplifying unit 1412 is connected to the second power supply module 120 through the fifth power supply port VCC5, and is used to support the transmitting and amplifying processing of the intermediate frequency signal of the second network.
  • the intermediate frequency signals of the second network include but not limited to B34, B39 and other frequency band signals.
  • the fourth transmitting module 142 is respectively connected to the fourth transmitting amplifying unit 1411, the fifth transmitting amplifying unit 1412, and the third antenna ANT3, and is used to support the transmission processing of the radio frequency signal of the third network, and is used to selectively connect the second network
  • the intermediate frequency signal of the second network, the low frequency signal of the second network and the radio frequency signal of the third network are transmitted to the radio frequency channel of the third antenna ANT3.
  • the fourth transmitting module 142 may include a first amplifying unit 1421 , a second amplifying unit 1422 and a first switching unit 1423 .
  • the first amplifying unit 1421 is used to support the power amplification processing of the low frequency signal of the third network under the action of the second power supply voltage
  • the second amplifying unit 1422 is used to support the power amplification processing of the intermediate frequency signal of the third network .
  • the third network may be a 2G network, for example, Global System for Mobile Communications (GSM).
  • GSM Global System for Mobile Communications
  • the low-frequency signal of the third network may be a low-frequency signal of the 2G network, for example, may at least include GSM850, GSM900 and other frequency band signals.
  • the intermediate frequency signal of the third network may be a 2G high frequency signal, for example, may at least include GSM1800, GSM1900 and other frequency band signals.
  • the first switch unit 1423 is a multi-channel selection switch, wherein the multiple first ends of the first switch unit 1423 are respectively connected to the first amplifying unit 1421, the second amplifying unit 1422, the fourth transmitting amplifying unit 1411, and the fifth transmitting amplifying unit. 1412, and the second end of the first switch unit 1423 is connected to the third antenna ANT3.
  • the first switch unit 1423 can selectively conduct the radio frequency paths between the first amplifying unit 1421, the second amplifying unit 1422, the fourth transmitting amplifying unit 1411, the fifth transmitting amplifying unit 1412 and the third antenna ANT3 respectively, and then can A radio frequency path for transmitting the intermediate frequency signal of the second network, the low frequency signal of the second network and the radio frequency signal of the third network to the third antenna ANT3 is selected.
  • the fourth transmitting module 142 may be a transmitting module (Transmitter Module, TxM).
  • TxM Transmitter Module
  • the transmitter module integrates a power amplifier that supports GSM low frequency and GSM high frequency, a multi-channel selection switch xPyT and a coupler, which can realize the amplification and output of the third network radio frequency signal and the transmission combination of signals in other frequency bands.
  • the integration degree of the RF front-end module 10 can be further improved, which is beneficial to the miniaturization design of the RF front-end module 10 .
  • the third transmitting module 141 further includes a sixth transmitting amplifying unit 1413, which is respectively connected to the fifth power supply port VCC5 and the fourth transmitting module 142 to support the transmission of the second network. Transmitting processing of high-frequency signals.
  • the sixth transmitting amplifying unit 1413 can be connected to the other first end of the first switching unit 1423 in the fourth transmitting module 142, so that the first switching unit 1423 can also selectively conduct the high-frequency signal of the second network to transmit to The radio frequency path of the third antenna ANT3.
  • the third transmitting module 141 may be a multi-band multi-mode power amplifier (Multi-band multi-mode power amplifier, MMPA) with built-in multiple amplifying units.
  • the third transmitting module 141 is a phase 2 MMPA device as an example for illustration.
  • the third transmitting module 141 integrates power amplifiers for supporting low-frequency, intermediate-frequency, and high-frequency signals, and can implement power amplification processing for amplifying low-frequency, intermediate-frequency, and high-band WCDMA signals and LTE signals.
  • the RF front-end module 10 When the RF front-end module 10 needs to work in the ENDC, it can also be used to support the power amplification processing of the 4G LTE signal low frequency and intermediate frequency anchor frequency bands, so as to realize the transmission processing of the 4G LTE signal low frequency and intermediate frequency anchor frequency bands.
  • the integration degree of the radio frequency front-end module 10 can be further improved , which is conducive to the miniaturization design of the radio frequency front-end module 10.
  • the third transmission module 141 for example, because the Phase 2 MMPA does not need to support the transmission processing of the 5G NR frequency band, only the ordinary second power supply module 120 (without boost function) to power it, it can meet the 3G/4G radio frequency performance and reduce the cost.
  • the radio frequency front-end module 10 can work under the working mode of ENDC (for example, (L/MB+N41, L/MB+N78), and can support the transmission of N41 frequency band signals through the first transmitting module 130, such as Phase 5N MMPA Transmit processing, so that it can avoid the use of the high cost and supply risk of the related technology used in the plug-in N41LPAF.
  • the 4G LTE anchor frequency band is realized by the second radio frequency processing module (such as phase 2MMPA) with low cost, which can be further improved
  • Reduce the cost of the radio frequency front-end module for example, the radio frequency front-end module provided by this embodiment can save about 3.5 US dollars in vehicle cost compared with the related technology.
  • the RF front-end module 10 further includes a second receiving module 180 connected to the first switch unit 1423 in the fourth transmitting module 142 .
  • the second receiving module 180 can be used to support the receiving and processing of the low-frequency signal of the second network, the intermediate-frequency signal of the second network and the high-frequency signal of the second network, and can also be used to support the receiving and processing of the signal of the third network.
  • the second receiving module 180 may specifically include a plurality of low noise amplifiers, filters, duplexers, switches, etc. for supporting different frequency bands.
  • the second receiving module 180 may be a radio frequency low noise amplifier module (Low noise amplifier front end module, LFEM), and may also be a diversity receiving module (Diversity Receive Module with Antenna) with an antenna switch module and a filter. Switch Module and SAW, DFEM), can also be a multi-band low noise amplifier (Multi band Low Noise Amplifier, MLNA) and so on.
  • LFEM radio frequency low noise amplifier front end module
  • DFEM Diversity receiving module
  • DFEM can also be a multi-band low noise amplifier (Multi band Low Noise Amplifier, MLNA) and so on.
  • MLNA Multi band Low Noise Amplifier
  • the radio frequency processing circuit 140 includes: a second radio frequency processing module 143 and a third radio frequency processing module 144 .
  • the second radio frequency processing module 143 is configured with a sixth power supply port VCC6 for connecting with the second power supply module 120 .
  • the second radio frequency processing module 143 is configured to support the transmission processing of the intermediate frequency signal of the second network under the action of the second power supply voltage, and output the intermediate frequency signal of the second network to the fourth antenna ANT4.
  • the third radio frequency processing module 144 is configured with a seventh power supply port VCC7 for connecting to the second power supply module 120, and the third radio frequency processing module 144 is used to support the low frequency signal to the second network under the action of the second power supply voltage and output the low-frequency signal of the second network to the fifth antenna ANT5.
  • radio frequency processing modules supporting the transmission processing of the intermediate frequency signal of the second network and the radio frequency processing module supporting the transmission processing of the low frequency signal of the second network independent modules. That is, when the radio frequency front-end module 10 works in ENDC, the transmission processing of the 4G LTE intermediate frequency anchor frequency band is supported by the second radio frequency processing module 143, and the transmission processing of the 4G LTE low frequency anchor frequency band is supported by the third radio frequency processing module 144. .
  • the power supply voltages of the second radio frequency processing module 143 and the third radio frequency processing module 144 are supported by the second power supply module 120 without a boost circuit, which can reduce the cost of the radio frequency front-end module 10 .
  • the second radio frequency processing module 143 is also used to support the transmission processing of the high-frequency signal of the second network, and select to output any frequency band signal in the intermediate frequency signal and high-frequency signal of the second network to the first Four antenna ANT4.
  • the second radio frequency processing module 143 may be a power amplifier module integrated duplexer (Power amplifier module integrated duplexer, PA Mid), and may also be a PA Mid with a built-in low noise amplifier, that is, L- PA Mid device.
  • the second radio frequency processing module 143 may be a phase 7 MHB PAMID device, wherein the second radio frequency processing module 143 integrates a power amplifier, a duplexer, a filter, a coupler and a switch for supporting medium and high frequency signals, and may Realize the transmission of WCDMA and 4G LTE signals in the medium and high frequency bands.
  • the RF front-end module when it is in the ENDC working mode, it can also realize the transmission processing of the 4G LTE signal medium frequency anchor frequency band.
  • the second radio frequency processing module 143 can be a Phase 7lite MHB LPAMID device, wherein the second radio frequency processing module 143 integrates a power amplifier, a low noise amplifier, a duplexer, a filter, and a coupler for supporting medium and high frequency signals And the switch can realize the transmission and reception processing of WCDMA and 4G LTE signals in the medium and high frequency bands.
  • the RF front-end module when it is in the ENDC working mode, it can also support the transmission and reception processing of the 4G LTE signal intermediate frequency anchor frequency band.
  • the third radio frequency processing module 144 is also used to support the transmission processing of the radio frequency signal of the third network, and select to output the low frequency signal of the second network and the radio frequency signal of the third network Signals in any frequency band are sent to the fifth antenna ANT5.
  • the third radio frequency processing module 144 includes a third amplifying unit 1441 , a fourth amplifying unit 1442 , a fifth amplifying unit 1443 and a second switching unit 1444 respectively connected to the seventh power supply port VCC7.
  • the third amplifying unit 1441 is used to support the transmission processing of the low-frequency signal of the second network under the action of the second power supply voltage, wherein the low-frequency signal of the second network may include but not limited to B5 and B8 frequency band signals.
  • the fourth amplifying unit 1442 and the fifth amplifying unit 1443 reference may be made to the first amplifying unit 1421 and the second amplifying unit 1422 in the foregoing embodiments, and details will not be repeated here.
  • the second switch unit 1444 can be a multi-channel selection switch, wherein the first ends of the second switch unit 1444 are respectively connected to the third amplifying unit 1441, the fourth amplifying unit 1442 and the fifth amplifying unit 1443, and the second switching unit
  • the second end of 1444 is connected to the fifth antenna ANT5 through the antenna port of the third radio frequency processing module 144, and is used to select and output any frequency band signal in the low frequency signal of the second network and the radio frequency signal of the third network to the fifth antenna ANT5 .
  • the third radio frequency processing module 144 may be a PA Mid device, or may be a PA Mid device with a built-in low noise amplifier, that is, an L-PA Mid device.
  • the third radio frequency processing module 144 is phase 7 LB PAMID, wherein, the third radio frequency processing module 144 integrates a power amplifier, a duplexer, a filter, a coupler and a switch for supporting low frequency signals, and can realize low frequency band The transmission of WCDMA and 4G LTE signals.
  • the RF front-end module when the RF front-end module is in the ENDC working mode, it can also realize the transmission processing of the low-frequency anchor frequency band of 4G LTE signals.
  • the third radio frequency processing module 144 can also be Phase 7lite MHB LPAMID, wherein the third radio frequency processing module 144 integrates a power amplifier for supporting low frequency signals, a low noise amplifier, a duplexer, a filter, a coupler and The switch can realize the transmission and reception processing of low-frequency WCDMA and 4G LTE signals.
  • the RF front-end module when it is in ENDC working mode, it can also support the transmission and reception processing of low-frequency anchor frequency bands of 4G LTE signals.
  • the integration degree of the radio frequency front-end module 10 can be further improved. It is beneficial to the miniaturization design of the radio frequency front-end module 10.
  • the third radio frequency processing module 144 for example, a phase 7 LB PAMID device
  • the common second power supply module 120 Power supply without boost function
  • the radio frequency front-end module 10 can work in ENDC, for example, under the operating mode of L/MB+N41, L/MB+N78, can pass through the first transmission module 130 (for example, Phase 5N MMPA device) and the second transmission module ( For example, N78 LPAF device), wherein, the first transmission module 130 can support the transmission processing of the N41 frequency band signal, so that it is possible to avoid the use of an external N41LPAF device with high cost and supply risk in related technologies, which can reduce the cost, For example, 0.2 US dollars.
  • the 4G LTE anchor frequency band is realized by Phase 7 MHB PAMID devices and Phase 7 LB PAMID devices. Therefore, the RF front-end module provided in this embodiment can save about US$1.5 in vehicle costs compared with related technologies.
  • the application of the radio frequency system in the mobile phone 10 is used as an example for illustration.
  • the mobile phone may include a memory 21 (which optionally includes one or more computer-readable storage medium), processing circuit 22, peripheral device interface 23, radio frequency system 24, input/output (I/O) subsystem 26. These components optionally communicate via one or more communication buses or signal lines 29 .
  • the mobile phone shown in FIG. 10 is not limited to the mobile phone, and may include more or less components than those shown in the figure, or combine some components, or arrange different components.
  • the various components shown in FIG. 10 are implemented in hardware, software, or a combination of both hardware and software, including one or more signal processing and/or application specific integrated circuits.
  • Memory 21 optionally includes high-speed random access memory, and optionally also includes non-volatile memory, such as one or more magnetic disk storage devices, flash memory devices, or other non-volatile solid-state memory devices.
  • the software components stored in the memory 21 include an operating system 211 , a communication module (or an instruction set) 212 , a global positioning system (GPS) module (or an instruction set) 213 and the like.
  • GPS global positioning system
  • Processing circuitry 22 and other control circuitry, such as control circuitry in radio frequency system 24 may be used to control the operation of handset 10 .
  • the processing circuit 22 may include one or more microprocessors, microcontrollers, digital signal processors, baseband processors, power management units, audio codec chips, application specific integrated circuits, and the like.
  • the processing circuit 22 may be configured to implement a control algorithm that controls the use of antennas in the handset 10 .
  • the processing circuit 22 may also issue control commands and the like for controlling switches in the radio frequency system 24 .
  • I/O subsystem 26 couples input/output peripherals on handset 10 such as a keypad and other input control devices to peripherals interface 23 .
  • I/O subsystem 26 optionally includes a touch screen, keys, tone generator, accelerometer (motion sensor), ambient light sensor and other sensors, light emitting diodes and other status indicators, data ports, and the like.
  • a user may control the operation of handset 10 by supplying commands via I/O subsystem 26 and may use the output resources of I/O subsystem 26 to receive status information and other output from handset 10 .
  • the user can turn on or turn off the mobile phone by pressing the button 261 .
  • the radio frequency system 24 may include the radio frequency front-end module 10 in any of the foregoing embodiments, wherein the radio frequency system 24 may also be used to process radio frequency signals of multiple different frequency bands.
  • the radio frequency system 24 may also be used to process radio frequency signals of multiple different frequency bands.
  • the Sub-6G frequency band may specifically include a 2.496GHz-6GHz frequency band and a 3.3GHz-6GHz frequency band.
  • Nonvolatile memory can include read only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory.
  • Volatile memory can include random access memory (RAM), which acts as external cache memory.
  • RAM is available in many forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced SDRAM (ESDRAM), Synchronous Link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).
  • SRAM Static RAM
  • DRAM Dynamic RAM
  • SDRAM Synchronous DRAM
  • DDR SDRAM Double Data Rate SDRAM
  • ESDRAM Enhanced SDRAM
  • SLDRAM Synchronous Link (Synchlink) DRAM
  • SLDRAM Synchronous Link (Synchlink) DRAM
  • Rambus direct RAM
  • DRAM direct memory bus dynamic RAM
  • RDRAM memory bus dynamic RAM

Abstract

一种射频前端模组，射频前端模组包括第一供电模块(110)、第二供电模块(110)、第一发射模块(130)和射频处理电路(140)，其中，第一发射模块(130)被配置有第一发射通路(TX1)和第二发射通路(TX2)，其中，第一发射通路(TX1)用于在第一供电电压的作用下，支持对接收的第一网络的低频信号的发射放大处理，第二发射通路(TX2)用于在第一供电电压的作用下，支持对接收的第一网络的第一高频信号的发射放大处理；射频处理电路(140)，用于在第二供电电压的作用下，支持对接收的第二网络的低频信号和第二网络的中频信号的发射处理。

Description

射频前端模组和射频系统
相关申请的交叉引用
本申请要求于2022年1月28日提交中国专利局、申请号为202220241940X实用新型名称为“射频前端模组和射频系统”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及天线技术领域，特别是涉及一种射频前端模组和射频系统。
背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有示例性技术。
随着技术的发展和进步，移动通信技术逐渐开始应用于射频系统，例如手机等。对于支持5G通信技术的射频系统，在非独立组网(Non-Standalone，NSA)模式下通常采用4G信号和5G信号的双连接模式。一般，为了提高4G和5G双连接模式下的通信性能，采用内置升压电路的供电模块来分别给用于支持4G信号和5G信号的放大处理的射频电路进行供电，其成本高。
发明内容
根据本申请的各种实施例，提供一种射频前端模组和射频系统。
第一方面，本申请实施例提供一种射频前端模组，包括：
第一供电模块，用于提供第一供电电压；
第二供电模块，用于提供第二供电电压；
第一发射模块，被配置有用于与所述第一供电模块连接的第一供电端口和第二供电端口，其中，所述第一发射模块被配置有第一发射通路和第二发射通路，其中，所述第一发射通路被配置为与所述第一供电端口连接，用于在所述第一供电电压的作用下，支持对接收的第一网络的低频信号的发射放大处理，第二发射通路被配置为与所述第二供电端口连接，用于在所述第一供电电压的作用下，支持对接收的第一网络的第一高频信号的发射放大处理；
射频处理电路，与所述第二供电模块连接，用于在所述第二供电电压的作用下，支持对接收的第二网络的低频信号和所述第二网络的中频信号的发射处理；其中，所述第一供电电压大于所述第二供电电压。
第二方面，本申请实施例提供一种射频系统，包括：
射频收发器；及
如前述的射频前端模组，其中所述第一射频处理电路、射频处理电路分别与所述射频收发器连接。
上述射频前端模组和射频系统，通过设置第一供电模块、第二供电模块分别一一对应为第一发射模块、射频处理电路供电，可以使得第一发射模块、射频处理电路同时工作，进而可以使射频前端模组同时输出具有不同网络的两路信号，以支持对4G LTE信号和5G NR信号的放大，进而可以实现对4G LTE信号和5G NR信号的双连接。另外，第一发射模块还可以在第一供电电压的作用下，支持对第一网络的低频信号的发射放大处理。其中，射频处理电路不需要支持对第一网络的射频信号，例如5G NR频段信号的发射处理，可以避免在第二供电模块中内置升压电路，可以采用小于第一供电电压的第二供电电压为射频处理电路供电，同时，也不需要对第一发射模块、射频处理电路中的功率放大单元进行 特殊设计，本申请实施例中提供的射频前端模组的成本低，且还可提高对低频信号的发射性能。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为一个实施例中射频前端模组的框架示意图之一；
图2为一个实施例中射频前端模组的框架示意图之二；
图3为一个实施例中射频前端模组的框架示意图之三；
图4为一个实施例中射频前端模组的框架示意图之四；
图5为一个实施例中射频前端模组的框架示意图之五；
图6为一个实施例中射频前端模组的框架示意图之六；
图7为一个实施例中射频前端模组的框架示意图之七；
图8为一个实施例中射频前端模组的框架示意图之八；
图9为一个实施例中射频前端模组的框架示意图之九；
图10为一个实施例中设有射频系统的通信设备的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
可以理解，本申请所使用的术语“第一”、“第二”等可在本文中用于描述各种元件，但这些元件不受这些术语限制。这些术语仅用于将第一个元件与另一个元件区分。举例来说，在不脱离本申请的范围的情况下，可以将第一天线称为第二天线，且类似地，可将第二天线称为第一天线。第一天线和第二天线两者都是天线，但其不是同一天线。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。在本申请的描述中，“若干”的含义是至少一个，例如一个，两个等，除非另有明确具体的限定。
本申请实施例涉及的射频前端模组可以应用到具有无线通信功能的射频系统，其射频系统可应用到通信设备中。该通信设备可以为手持设备、车载设备、可穿戴设备、计算设备或连接到无线调制解调器的其他处理设备，以及各种形式的用户设备(User Equipment，UE)(例如，手机)，移动台(Mobile Station，MS)等等。为方便描述，上面提到的设备统称为通信设备。
本申请实施例提供一种射频前端模组。本申请实施例提供的射频前端模组被配置为支持5G NR的非独立组网工作模式以及支持4G LTE的长期演进网络(long term evolution，LTE)工作模式。也即，本申请实施例提供的射频前端模组可工作在非独立组网NSA工作模式和LTE工作模式下(或称之为LTE only工作模式)。
其中，非独立组网工作模式包括EN-DC、NE-DC和NGEN-DC构架中的任一种。在本申请实施例中，以非独立组网工作模式为EN-DC构架为例进行说明。E为演进的通用 移动通信系统地面无线接入(Evolved-Universal Mobile Telecommunications System Terrestrial Radio Access，E-UTRA)，代表移动终端的4G无线接入；N为新空口(New Radio，NR)，代表移动终端的5G无线连接；DC为双连接(Dual Connectivity)，代表4G和5G的双连接。在EN-DC模式下，以4G核心网为基础，射频前端模组能够实现同时与4G基站和5G基站进行双连接。
在相关技术中，为了满足4G LTE信号和5G NR信号不同频段之间的EN-DC组合的配置要求的射频前端模组中，采用两个包括boost升压电路的供电模块来分别为不同射频处理电路供电，其成本高。或者，若两个供电模块都采用不需要boost升压电路的供电模块来分别为不同射频处理电路供电的射频前端模组，则必须对射频处理电路中的功率放大单元进行特殊设计，例如，功率放大单元采用功率合成的方式对各频段的射频信号进行功率合成处理，在满足输出功率等级的前提下可以降低各供电电压的电压值，但是会增加对功率放大单元的复杂度以及成本。
如图1所示，在其中一个实施例中，本申请实施例提供的射频前端模组10包括：第一供电模块110、第二供电模块120、第一发射模块130和射频处理电路140。
其中，第一供电模块110用于提供第一供电电压，第二供电模块120用于提供第二供电电压，其中，第一供电电压大于第二供电电压。具体地，第一供电模块110、第二供电模块120均可包括电源管理芯片(Power management IC，PMIC)。
第一发射模块130，被配置有用于与第一供电模块110连接的第一供电端口VCC1和第二供电端口VCC2。其中，第一发射模块130被配置有第一发射通路TX1和第二发射通路TX2，其中，第一发射通路TX1被配置为与第一供电端口VCC1连接，用于在第一供电电压的作用下，支持对接收的第一网络的低频信号的发射放大处理。第二发射通路TX2被配置为与第二供电端口VCC2连接，用于在第一供电电压的作用下，支持对接收的第一网络的第一高频信号的发射放大处理。射频处理电路140，与第二供电模块120连接，用于在第二供电电压的作用下，支持对接收的第二网络的低频信号和第二网络的中频信号的发射处理。其中，第一发射模块130接收的第一网络的低频信号以及射频处理电路140接收的第二网络的低频信号和中频信号分别由射频收发器20提供。第一射频处理电路130和第二射频处理电路140处理后的信号可经天线辐射至自由空间。
第一供电模块110可给第一发射模块130进行供电。第二供电模块120可给射频处理电路140供电。第一发射模块130和射频处理电路140可分别在对应的供电电压的作用下，对接收的各射频信号进行功率放大等处理以实现对所接收的射频信号的发射处理。其中，第一发射模块130和射频处理电路140处理后的信号可经天线辐射至自由空间。
第一网络可以为5G网络，其中，第一网络的射频信号可以称之为新空口(New Radio，NR)信号，也即5G NR信号。第二网络可以为4G网络，其中，第二网络的射频信号可以称之为长期演进(Long Term Evolution，LTE)信号，也即4G LTE信号。其中，低频信号、中频信号、第一高频信号(也可称之为高频信号)和第二高频信号(也可称之为超高频信号)的频段划分如表1所示。
表1为低频信号、中频信号、第一高频信号和第二高频信号的频段划分表
Figure PCTCN2022139644-appb-000001
需要说明的是，5G网络中沿用4G所使用的频段，仅更改序号之前的标识。此外，5G网络还新增了一些4G网络中没有的超高频段，例如，N77、N78和N79等。
在本申请实施例中，通过设置第一供电模块110为第一发射模块130供电、通过设置第二供电模块120为射频处理电路140供电，可以使得第一发射模块130与射频处理电路140同时工作，进而可以使射频前端模组10同时输出具有不同网络的两路信号，以支持对4G LTE信号和5G NR信号的放大，进而可以实现对4G LTE信号和5G NR信号的双连接。其中，第一路信号为经第一发射模块130放大处理后的信号，例如，第一网络的第一高频信号。第二路信号为经射频处理电路140处理后的信号，例如，第二网络的低频信号和/或第二网络的中频信号。因此，第一路信号和第二路信号的组合可以满足4G LTE信号和5G NR信号之间的不同EN-DC组合的配置要求，如表2所示。
表2为4G LTE信号和5G NR信号之间的不同EN-DC组合配置表
4G LTE频段 5G NR频段 EN-DC
L H L+H
M H M+H
射频前端模组10可被配置为支持第一网络的第一高频信号和第二高频信号(例如，5G NR的N41、N78等)与第二网络的目标信号(例如，4G LTE信号的低频信号或/和中频信号)双连接的非独立组网工作模式。
本申请实施例的射频前端模组10，包括第一供电模块110、第二供电模块120、第一发射模块130和射频处理电路140，其中，第一供电模块110、第二供电模块120可分别一一对应为第一发射模块130、射频处理电路140供电，可支持对4G LTE信号和5G NR信号的同时放大，进而可以实现对4G LTE信号和5G NR信号的双发射功能，且不互相冲突，可以满足4G LTE信号和5G NR信号不同频段之间的EN-DC组合的配置要求。另外，第一发射模块130还可以在第一供电电压的作用下，支持对第一网络的低频信号的发射放大处理。在本申请实施例中，射频处理电路140不需要支持对第一网络的射频信号，例如不需要支持对5G NR频段信号的发射处理，因此，在本申请实施例中，采用低于第一供电电压的第二供电电压为射频处理电路140供电，可以避免在第二供电模块120中内置升压电路，也即，也不需要对第一发射模块130和射频处理电路140中的功率放大单元进行特殊设计，本申请实施例中提供的射频前端模组10可以降低成本，且还可提高对低频信号的发射性能。
在其中一个实施例中，第一供电模块110采用包络跟踪(Envelope Tracking，ET)供电模式提供第一供电电压。其中第一供电模块110可包括RF PMIC#1，RF PMIC#1中包括boost升压电路，RF PMIC#1的输出电压大于RF PMIC#1的输入电压。第二供电模块120平均功率跟踪(Average Power Tracking，APT)供电模式提供第二供电电压。其中第二供电模块120可包括RF PMIC#2，RF PMIC#2中不包括boost升压电路，RF PMIC#2的输出电压小于或等于RF PMIC#2的输入电压。同时，RF PMIC#1的输出电压大于RF PMIC#2的输出电压。
在本实施例中，射频处理电路140不需要支持对第一网络的射频信号的发射处理，通过普通的平均功率跟踪供电模式进行供电(不带boost升压功能)即可满足对第二网络信号的射频性能。第一发射模块130才用包络跟踪供电模块进行供电(带boost升压功能)，保证了第一网络信号的射频性能。这样，可以避免在第二供电模块120中内置升压电路，也不需要对第一发射模块130和射频处理电路140中的功率放大单元进行特殊设计，本申请实施例中提供的射频前端模组10可以降低成本。
如图2所示，在其中一个实施例中，第一发射模块130还被配置有第三发射通路，第三发射通路被配置为与第二供电端口VCC2连接，用于在第一供电电压的作用下，支持对接收的第一网络的中频信号的发射放大处理。第一网络的中频信号包括但不限于N1、N3、 N2、N7、N34、N39等频段。
在本实施例中，第一发射模块130可用于支持对的第一网络的低频信号、中频信号以及第一高频信号的发射处理，也即，可以支持对5G NR信号全频段的发射放大处理，可以提高射频前端模组对5G NR信号的发射性能。
如图3所示，在其中一个实施例中，射频前端模组还包括分别与第一发射模块130和第一天线ANT1连接的开关模块150。第一发射模块130还被配置有用于与射频收发器连接的第一输入端口、第二输入端口、第三输入端口，以及与开关模块150连接的第一天线端口、第二天线端口和第三天线端口，开关模块150用于选择将第一天线端口、第二天线端口和第三天线端口传输的信号导通至第一天线ANT1。需要说明的是，在本申请实施例中，可以省略图3中的开关模块150，对应的，每个天线端口可对应连接一支天线。
第一发射模块130包括：第一发射放大单元131、第二发射放大单元132和第三发射放大单元133。其中，第一发射放大单元131对第一输入端口接收的第一网络的低频信号进行功率放大，经功率放大处理后的低频信号经第一天线端口传输至开关模块150，以实现对低频信号的发射处理。其中，第一输入端口、第一发射放大单元131、第一天线端口可构成第一发射通路TX1。
第二发射放大单元132对第二输入端口接收的第一网络的中频信号进行功率放大，经功率放大处理后的中频信号经第二天线端口传输至开关模块150，以实现对中频信号的发射处理。其中，第二输入端口、第二发射放大单元132、第二天线端口可构成第二发射通路TX2。
第三发射放大单元133对第三输入端口接收的第一网络的第一高频信号进行功率放大，经功率放大处理后的第一高频信号经第三天线端口传输至开关模块150，以实现对第一高频信号的发射处理。其中，第三输入端口、第三发射放大单元133、第三天线端口可构成第三发射通路。
具体地，第一发射放大单元131、第二发射放大单元132和第三发射放大单元133均可包括功率放大器和开关，以实现对接收的信号的功率放大处理。其中，第一天线端口、第二天线端口和第三天线端口的数量均为多个。示例性的，第一发射模块130可以为内置多个放大单元的多频多模功率放大器(Multi-band multi-mode power amplifier，MMPA)。该第一发射模块130上配置的各个端口可以理解为多频多模放大器的射频引脚。示例性的，第一发射模块130可以为phase 5N MMPA器件，其中集成用于支持对第一网络的低频、中频和高频信号的功率放大器，可实现低、中、高频段WCDMA信号，LTE信号以及5G NR信号的放大输出，还可用支持对41信号的发射处理以及其他5G NR低中高频段的频率重组。
在本申请实施例中，通过第一发射模块130，例如phase 5N MMPA器件，可实现N41的发射功能，可以避免使用相关技术中采用外挂N41集成有滤波器和低噪声放大器的功率放大器开关模组(LNA-PA ASM module with integrated filter，简称LPAF)来实现对N41频段的发射处理，可以节约成本，例如可以节约0.2美金左右。另外，第一发射放大单元131、第二发射放大单元132和第三发射放大单元133可集成在第一发射模块130中，可以进一步提高射频前端模组10的集成度，有利于射频前端模组10小型化设计。
如图4所示，在其中一个实施例中，射频前端模组还包括：第一接收模块160。其中，第一接收模块160与开关模块150连接，用于支持对接收的第一网络的低频信号、第一网络的中频信号以及第一网络的第一高频信号的接收处理。具体地，第一接收模块160可以具体包括多个用于支持不同频段的低噪声放大器、滤波器、双工器、开关等。示例性的，第一接收模块160可以为射频低噪声放大器模组(Low noise amplifier front end module，LFEM)，还可以为带天线开关模组和滤波器的分集接收模组(Diversity Receive Module with Antenna Switch Module and SAW，DFEM)，还可以为多频段低噪放大器(Multi band  Low Noise Amplifier，MLNA)等。在本申请实施例中，对第一接收模块160的具体组成不做进一步的限定。
在本实施例中，通过设置第一接收模块160，使得射频前端模组能够支持对第一网络的低频信号、第一网络的中频信号以及第一网络的第一高频信号的接收处理，进而可提高对5G NR信号的接收性能。
如图5所示，射频前端模组还包括第一射频处理模块170。第一射频处理模块170被配置有与第一供电模块110连接的第三供电端口VCC3。第一射频处理模块170用于在第一供电电压的作用下，支持对接收的第一网络的第二高频信号的发射处理并输出第二高频信号至第二天线ANT2。具体地，第一射频处理模块170用于支持对第二高频信号的功率放大、滤波处理，并将滤波处理后的第二高频信号输出至第二天线ANT2。可选地，第一射频处理模块170除了可以支持对第二高频信号的发射处理以外，还可以支持对第二高频信号的接收处理。为了便于说明，以第二高频信号为N78频段信号为例进行说明。其中，第一射频处理模块170可以理解为用于支持N78频段信号的收发模块。具体地，第一射频处理模块170可以为N78 LPAF，其中集成可用于支持N78信号的功率放大器、滤波器、低噪声放大器、耦合器和开关，以实现对N78频段信号的接收和放大处理。该第一射频处理模块170上配置的各个端口可以理解为LPAF的射频引脚。
通过设置第一射频处理模块170，射频前端模组10可被配置为支持第一网络的第一高频信号和第二高频信号(例如，5G NR的N41、N78等)与第二网络的低频信号和/或中频信号(例如，4G LTE信号的低频信号或/和中频信号)双连接的非独立组网工作模式，如表3所示。
表3为4G LTE信号和5G NR信号之间的不同EN-DC组合配置表
4G LTE频段 5G NR频段 EN-DC
L H L+H
L UH L+UH
M H M+H
M UH M+UH
在本实施例中，第一射频处理模块170采用独立的集成器件，例如，LPAF器件，可以进一步提高射频前端模组10的集成度，有利于射频前端模组10小型化设计。
如图6所示，在其中一个实施例中，射频处理电路140包括：第三发射模块141和第四发射模块142。其中，第三发射模块141，被配置有用于与第二供电模块120连接的第四供电端口VCC4和第五供电端口VCC5。第三发射模块141包括：第四发射放大单元1411和第五发射放大单元1412。其中，第四发射放大单元1411，经第四供电端口VCC4与第二供电模块120连接，用于支持对第二网络的低频信号的发射放大处理。第二网络的低频信号可包括但不限于B5、B8等频段信号。第五发射放大单元1412，经第五供电端口VCC5与第二供电模块120连接，用于支持对第二网络的中频信号的发射放大处理。第二网络的中频信号包括但不限于B34、B39等频段信号。
第四发射模块142，分别与第四发射放大单元1411、第五发射放大单元1412、第三天线ANT3连接，用于支持对第三网络的射频信号的发射处理，并用于选择导通第二网络的中频信号、第二网络的低频信号以及第三网络的射频信号传输至第三天线ANT3的射频通路。
具体地，第四发射模块142可包括第一放大单元1421、第二放大单元1422和第一开关单元1423。其中，第一放大单元1421用于在第二供电电压的作用下，支持对第三网络的低频信号的功率放大处理，第二放大单元1422用于支持对第三网络的中频信号的功率放大处理。其中，其中，第三网络可以为2G网络，例如，全球移动通信(Global System for Mobile Communications，GSM)。其中，第三网络的低频信号可以为2G网络的低频信号， 例如可至少包括GSM850、GSM900等频段信号。第三网络的中频信号可为2G高频信号，例如，可至少包括GSM1800、GSM1900等频段信号。
第一开关单元1423为多通道选择开关，其中，第一开关单元1423的多个第一端分别与第一放大单元1421、第二放大单元1422、第四发射放大单元1411、第五发射放大单元1412连接，第一开关单元1423的第二端与第三天线ANT3连接。其中，第一开关单元1423可选择导通第一放大单元1421、第二放大单元1422、第四发射放大单元1411、第五发射放大单元1412分别与第三天线ANT3之间的射频通路，进而可选择导通第二网络的中频信号、第二网络的低频信号以及第三网络的射频信号传输至第三天线ANT3的射频通路。
在本申请实施例中，第四发射模块142可以为发射模组(Transmitter Module，TxM)。其中，发射模组集成了支持对GSM低频和GSM高频的功率放大器、多通道选择开关xPyT和耦合器，可以实现第三网络射频信号放大输出以及其他频段信号的发射合路等处理。通过将第一放大单元1421、第二放大单元1422和第一开关单元1423集成在发射模组中，可以进一步提高射频前端模组10的集成度，有利于射频前端模组10小型化设计。
请继续参考图6，在其中一个实施例中，第三发射模块141还包括第六发射放大单元1413，分别与第五供电端口VCC5、第四发射模块142连接，用于支持对第二网络的高频信号的发射处理。其中，第六发射放大单元1413可与第四发射模块142中的第一开关单元1423的其他第一端连接，这样，第一开关单元1423还可以选择导通第二网络的高频信号传输至第三天线ANT3的射频通路。
其中，第三发射模块141可以为内置多个放大单元的多频多模功率放大器(Multi-band multi-mode power amplifier，MMPA)。在本申请实施例中，以第三发射模块141为phase 2 MMPA器件为例进行说明。具体地，第三发射模块141集成了用于支持低频、中频以及高频信号的功率放大器，可以实现对低频、中频以及高频段WCDMA信号、LTE信号放大的功率放大处理。在射频前端模组10需要工作在ENDC时，还可以用于支持4G LTE信号低频和中频锚点anchor频段的功率放大处理，以实现对4G LTE信号低频和中频锚点频段的发射处理。
在本申请实施例中，通过将第四发射放大单元1411、第五发射放大单元1412、第六发射放大单元1413可集成在第三发射模块141中，可以进一步提高射频前端模组10的集成度，有利于射频前端模组10小型化设计，另外，第三发射模块141，例如，Phase 2 MMPA由于不需要支持对5G NR频段的发射处理，则仅需要普通的第二供电模块120(不带boost升压功能)来对其进行供电，就可以满足3G/4G射频性能，可以降低成本。另外，射频前端模组10可工作在ENDC(例如，(L/MB+N41、L/MB+N78)的工作模式下，可以通过第一发射模块130，例如Phase 5N MMPA支持对N41频段信号的发射处理，这样就可以避免使用相关技术中采用的成本高昂且存在供应风险的外挂的N41LPAF。其中，4G LTE锚点频段通过成本低的第二射频处理模块(例如phase 2MMPA)来实现可以进一步的降低射频前端模组的成本，例如，本实施例提供的射频前端模组相对于相关技术中，可以节约3.5美金左右的车成本。
如图7所示，在其中一个实施例中，射频前端模组10还包括与第四发射模块142中第一开关单元1423连接的第二接收模块180。该第二接收模块180可用于支持对第二网络的低频信号、第二网络的中频信号和第二网络的高频信号的接收处理，还可以用于支持对第三网络信号的接收处理。具体地，第二接收模块180可以具体包括多个用于支持不同频段的低噪声放大器、滤波器、双工器、开关等。示例性的，第二接收模块180可以为射频低噪声放大器模组(Low noise amplifier front end module，LFEM)，还可以为带天线开关模组和滤波器的分集接收模组(Diversity Receive Module with Antenna Switch Module and SAW，DFEM)，还可以为多频段低噪放大器(Multi band Low Noise Amplifier，MLNA)等。在本申请实施例中，对第二接收模块180的具体组成不做进一步的限定。
如图8所示，在其中一个实施例中，射频处理电路140包括：第二射频处理模块143和第三射频处理模块144。其中，第二射频处理模块143，被配置有用于与第二供电模块120连接的第六供电端口VCC6。第二射频处理模块143用于在第二供电电压的作用下，支持对第二网络的中频信号的发射处理，并输出第二网络的中频信号至第四天线ANT4。第三射频处理模块144，被配置有用于与第二供电模块120连接的第七供电端口VCC7，第三射频处理模块144用于在第二供电电压的作用下，支持对第二网络的低频信号的发射处理，并输出第二网络的低频信号至第五天线ANT5。
在本实施例中，与前述实施例不同的是，支持对第二网络的中频信号的发射处理的射频处理模块以及用于支持对第二网络的低频信号的发射处理的射频处理模块为两个独立的模块。也即，射频前端模组10工作在ENDC时，4G LTE中频锚点频段的发射处理由第二射频处理模块143来支持，4G LTE低频锚点频段的发射处理由第三射频处理模块144来支持。另外，第二射频处理模块143和第三射频处理模块144的供电电压均由不设置boost升压电路的第二供电模块120来支持，可以降低射频前端模组10的成本。
在其中一个实施例中，第二射频处理模块143还用于支持对第二网络的高频信号的发射处理，并选择输出第二网络的中频信号和高频信号中的任一频段信号至第四天线ANT4。具体地，第二射频处理模块143可以为集成双工器的功率放大器模组(Power amplifier module integrated duplexer，PA Mid)，也可以为也可以为内置低噪声放大器的PA Mid，也即，L-PA Mid器件。
示例性的，第二射频处理模块143可以为phase 7 MHB PAMID器件，其中，第二射频处理模块143集成用于支持中高频信号的功率放大器、双工器、滤波器、耦合器以及开关，可以实现中高频段WCDMA、4G LTE信号的发射，同时，当射频前端模组处于ENDC工作模式时，还可以实现对4G LTE信号中频锚点频段的发射处理。
可选的，第二射频处理模块143可以为Phase 7lite MHB LPAMID器件，其中，第二射频处理模块143集成用于支持中高频信号的功率放大器、低噪声放大器、双工器、滤波器、耦合器以及开关，可以实现中高频段WCDMA、4G LTE信号的发射和接收处理，同时，当射频前端模组处于ENDC工作模式时，还可以支持对4G LTE信号中频锚点频段的收发处理。
如图9所示，在其中一个实施例中，第三射频处理模块144还用于支持对第三网络的射频信号的发射处理，并选择输出第二网络的低频信号、第三网络的射频信号中的任一频段信号至第五天线ANT5。具体地，第三射频处理模块144包括分别与第七供电端口VCC7连接的第三放大单元1441、第四放大单元1442和第五放大单元1443以及第二开关单元1444。其中，第三放大单元1441用于在第二供电电压的作用下，支持对第二网络的低频信号的发射处理，其中，第二网络的低频信号可包括但不限于B5、B8频段信号。第四放大单元1442和第五放大单元1443可以参考前述实施例中的第一放大单元1421、第二放大单元1422，在此，不再一一赘述。第二开关单元1444可以为多通道选择开关，其中，第二开关单元1444的多个第一端分别与第三放大单元1441、第四放大单元1442和第五放大单元1443连接，第二开关单元1444的第二端经第三射频处理模块144的天线端口与第五天线ANT5连接，用于选择输出第二网络的低频信号、第三网络的射频信号中的任一频段信号至第五天线ANT5。
其中，第三射频处理模块144可以PA Mid器件，也可以为也可以为内置低噪声放大器的PA Mid器件，也即，L-PA Mid器件。示例性的，第三射频处理模块144为phase 7 LB PAMID，其中，第三射频处理模块144集成用于支持低频信号的功率放大器、双工器、滤波器、耦合器以及开关，可以实现低频段WCDMA、4G LTE信号的发射，同时，当射频前端模组处于ENDC工作模式时，还可以实现对4G LTE信号低频锚点频段的发射处理。可选的，第三射频处理模块144也可以为Phase 7lite MHB LPAMID，其中，第三射频处理 模块144集成用于支持低频信号的功率放大器、低噪声放大器、双工器、滤波器、耦合器以及开关，可以实现低频段WCDMA、4G LTE信号的发射和接收处理，同时，当射频前端模组处于ENDC工作模式时，还可以支持对4G LTE信号低频锚点频段的收发处理。
在本申请实施例中，通过将第三放大单元1441、第四放大单元1442、第五放大单元1443可集成在第三射频处理模块144中，可以进一步提高射频前端模组10的集成度，有利于射频前端模组10小型化设计，另外，第三射频处理模块144(例如，phase 7 LB PAMID器件)由于不需要支持对5G NR频段的发射处理，则仅需要普通的第二供电模块120(不带boost升压功能)来对其进行供电，就可以满足3G/4G射频性能，其可降低成本，例如，相对采用带boost升压功能的供电模块可降低1.3美金。另外，射频前端模组10可工作在ENDC，例如L/MB+N41、L/MB+N78的工作模式下，可以通过第一发射模块130(例如，Phase 5N MMPA器件)和第二发射模块(例如，N78 LPAF器件)，其中，第一发射模块130可支持对N41频段信号的发射处理，这样就可以避免使用相关技术中采用的成本高昂且存在供应风险的外挂的N41LPAF器件，可降低成本，例如0.2美金。其中，4G LTE锚点频段通过Phase 7 MHB PAMID器件以及Phase 7 LB PAMID器件实现，因此，本实施例提供的射频前端模组相对于相关技术中，可以节约1.5美金左右的车成本。
如图10所示，进一步的，以射频系统应用在手机10中为例进行说明，具体的，如图10所示，该手机可包括存储器21(其任选地包括一个或多个计算机可读存储介质)、处理电路22、外围设备接口23、射频系统24、输入/输出(I/O)子系统26。这些部件任选地通过一个或多个通信总线或信号线29进行通信。本领域技术人员可以理解，图10所示的手机并不构成对手机的限定，可以包括比图示更多或更少的部件，或者组合某些部件，或者不同的部件布置。图10中所示的各种部件以硬件、软件、或硬件与软件两者的组合来实现，包括一个或多个信号处理和/或专用集成电路。
存储器21任选地包括高速随机存取存储器，并且还任选地包括非易失性存储器，诸如一个或多个磁盘存储设备、闪存存储器设备、或其他非易失性固态存储器设备。示例性的，存储于存储器21中的软件部件包括操作系统211、通信模块(或指令集)212、全球定位系统(GPS)模块(或指令集)213等。
处理电路22和其他控制电路(诸如射频系统24中的控制电路)可以用于控制手机10的操作。该处理电路22可以包括一个或多个微处理器、微控制器、数字信号处理器、基带处理器、功率管理单元、音频编解码器芯片、专用集成电路等。
处理电路22可以被配置为实现控制手机10中的天线的使用的控制算法。处理电路22还可以发出用于控制射频系统24中各开关的控制命令等。
I/O子系统26将手机10上的输入/输出外围设备诸如键区和其他输入控制设备耦接到外围设备接口23。I/O子系统26任选地包括触摸屏、按键、音调发生器、加速度计(运动传感器)、周围光传感器和其他传感器、发光二极管以及其他状态指示器、数据端口等。示例性的，用户可以通过经由I/O子系统26供给命令来控制手机10的操作，并且可以使用I/O子系统26的输出资源来从手机10接收状态信息和其他输出。例如，用户按压按钮261即可启动手机或者关闭手机。
射频系统24可以包括前述任一实施例中的射频前端模组10，其中，射频系统24还可用于处理多个不同频段的射频信号。例如用于接收1575MHz的卫星定位信号的卫星定位射频电路、用于处理IEEE802.11通信的2.4GHz和5GHz频段的WiFi和蓝牙收发射频电路、用于处理蜂窝电话频段(诸如850MHz、900MHz、1800MHz、1900MHz、2100MHz的频段、和Sub-6G频段)的无线通信的蜂窝电话收发射频电路。其中，Sub-6G频段可具体包括2.496GHz-6GHz频段，3.3GHz-6GHz频段。
本申请所使用的对存储器、存储、数据库或其它介质的任何引用可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器(ROM)、可编程ROM(PROM)、电可 编程ROM(EPROM)、电可擦除可编程ROM(EEPROM)或闪存。易失性存储器可包括随机存取存储器(RAM)，它用作外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM(SRAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、双数据率SDRAM(DDR SDRAM)、增强型SDRAM(ESDRAM)、同步链路(Synchlink)DRAM(SLDRAM)、存储器总线(Rambus)直接RAM(RDRAM)、直接存储器总线动态RAM(DRDRAM)、以及存储器总线动态RAM(RDRAM)。
以上实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种射频前端模组，包括：
    第一供电模块，用于提供第一供电电压；
    第二供电模块，用于提供第二供电电压；
    第一发射模块，被配置有用于与所述第一供电模块连接的第一供电端口和第二供电端口，其中，所述第一发射模块被配置有第一发射通路和第二发射通路，其中，所述第一发射通路被配置为与所述第一供电端口连接，用于在所述第一供电电压的作用下，支持对接收的第一网络的低频信号的发射放大处理，第二发射通路被配置为与所述第二供电端口连接，用于在所述第一供电电压的作用下，支持对接收的第一网络的第一高频信号的发射放大处理；
    射频处理电路，与所述第二供电模块连接，用于在所述第二供电电压的作用下，支持对接收的第二网络的低频信号和所述第二网络的中频信号的发射处理。
  2. 根据权利要求1所述的射频前端模组，其中，所述第一发射模块还被配置有第三发射通路，所述第三发射通路被配置为与所述第二供电端口连接，用于在所述第一供电电压的作用下，支持对接收的第一网络的中频信号的发射放大处理。
  3. 根据权利要求2所述的射频前端模组，其中，所述射频前端模组还包括开关模块，所述第一发射模块还被配置有用于与射频收发器连接的第一输入端口、第二输入端口、第三输入端口，以及与所述开关模块连接的第一天线端口、第二天线端口和第三天线端口，所述开关模块用于选择将所述第一天线端口、所述第二天线端口和所述第三天线端口传输的信号导通至第一天线，其中，所述第一发射模块包括：第一发射放大单元、第二发射放大单元和第三发射放大单元，其中，
    所述第一发射放大单元对所述第一输入端口接收的所述第一网络的低频信号进行功率放大，经功率放大处理后的所述低频信号经所述第一天线端口传输至所述开关模块，以实现对所述低频信号的发射处理；
    所述第二发射放大单元对所述第二输入端口接收的所述第一网络的中频信号进行功率放大，经功率放大处理后的所述中频信号经所述第二天线端口传输至所述开关模块，以实现对所述中频信号的发射处理；
    所述第三发射放大单元对所述第三输入端口接收的所述第一网络的第一高频信号进行功率放大，经功率放大处理后的所述第一高频信号经所述第三天线端口传输至所述开关模块，以实现对所述第一高频信号的发射处理。
  4. 根据权利要求3所述的射频前端模组，其中，所述射频前端模组还包括：
    第一接收模块，与所述开关模块连接，用于支持对接收的所述第一网络的低频信号、所述第一网络的中频信号以及所述第一网络的第一高频信号的接收处理。
  5. 根据权利要求1所述的射频前端模组，其中，所述射频前端模组还包括：
    第一射频处理模块，被配置有与所述第一供电模块连接的第三供电端口，所述第一射频处理模块用于在所述第一供电电压的作用下，支持对接收的所述第一网络的第二高频信号的发射处理并输出所述第二高频信号至第二天线，其中，所述第二高频信号的频率高于所述第一高频信号的频率。
  6. 根据权利要求5所述的射频前端模组，其中，所述第一网络为5G网络，所述第二网络为4G网络，其中，所述第二高频信号包括N78频段信号。
  7. 根据权利要求6所述的射频前端模组，其中，所述第一射频处理模块为用于支持N78频段信号的收发模块。
  8. 根据权利要求1所述的射频前端模组，其中，所述射频处理电路包括第三发射模块和第四发射模块，其中，
    所述第三发射模块，被配置有第四供电端口和第五供电端口，其中，所述第三发射模 块包括：
    第四发射放大单元，经所述第四供电端口与所述第二供电模块连接，用于支持对所述第二网络的低频信号的发射放大处理；
    第五发射放大单元，经所述第五供电端口与所述第二供电模块连接，用于支持对所述第二网络的中频信号的发射放大处理；
    所述第四发射模块，分别与所述第四发射放大单元、第五发射放大单元、第三天线连接，用于支持对第三网络的射频信号的发射处理，并用于选择导通所述第二网络的中频信号、所述第二网络的低频信号以及所述第三网络的射频信号传输至第三天线的射频通路。
  9. 根据权利要求8所述的射频前端模组，其中，所述第四发射模块包括：
    第一放大单元，用于在第二供电电压的作用下，支持对第三网络的低频信号的功率放大处理；
    第二放大单元，用于在第二供电电压的作用下，支持对第三网络的中频信号的功率放大处理；
    第一开关单元，所述第一开关单元的多个第一端分别与所述第一放大单元、所述第二放大单元、所述第四发射放大单元、所述第五发射放大单元连接，所述第一开关单元的第二端与所述第三天线连接，用于选择导通所述第一放大单元、所述第二放大单元、所述第四发射放大单元、所述第五发射放大单元分别与所述第三天线之间的射频通路。
  10. 根据权利要求9所述的射频前端模组，其中，所述第三网络为2G网络，所述第三网络的低频信号为2G网络的低频信号，所述第三网络的中频信号为2G高频信号。
  11. 根据权利要求8所述的射频前端模组，其中，所述第三发射模块还包括：
    第六发射放大单元，分别与所述第五供电端口、所述第四发射模块连接，用于支持对所述第二网络的高频信号的发射处理。
  12. 根据权利要求11所述的射频前端模组，其中，所述第四发射放大单元、所述第五发射放大单元、所述第六发射放大单元集成在所述第三发射模块中，所述第三发射模块为多频多模功率放大器。
  13. 根据权利要求8所述的射频前端模组，其中，所述射频前端模组还包括：
    第二接收模块，与所述第四发射模块连接，用于支持对接收的所述第二网络的低频信号、所述第二网络的中频信号和第二网络的高频信号的接收处理。
  14. 根据权利要求1所述的射频前端模组，其中，射频处理电路包括：
    第二射频处理模块，被配置有用于与所述第二供电模块连接的第六供电端口，所述第二射频处理模块用于在所述第二供电电压的作用下，支持对所述第二网络的中频信号的发射处理，并输出所述第二网络的中频信号至第四天线；
    第三射频处理模块，被配置有用于与所述第二供电模块连接的第七供电端口，所述第三射频处理模块用于在所述第二供电电压的作用下，支持对所述第二网络的低频信号的发射处理，并输出所述第二网络的低频信号至第五天线。
  15. 根据权利要求14所述的射频前端模组，其中，所述第二射频处理模块还用于支持对所述第二网络的高频信号的发射处理，并选择输出所述第二网络的低频信号和所述第二网络的高频信号中的任一频段信号至所述第四天线。
  16. 根据权利要求14所述的射频前端模组，其中，所述第三射频处理模块还用于支持对第三网络的射频信号的发射处理，并选择输出所述第二网络的低频信号、所述第三网络的射频信号中的任一频段信号至所述第五天线。
  17. 根据权利要求16所述的射频前端模组，其中，所述第三射频处理模块包括分别与所述第七供电端口连接的第三放大单元、第四放大单元和第五放大单元以及第二开关单元；其中，所述第三放大单元用于在第二供电电压的作用下，支持对第二网络的低频信号的发射处理；所述第二开关单元的多个第一端分别与所述第三放大单元、所述第四放大单 元和第五放大单元连接，所述第二开关单元的第二端经所述第三射频处理模块的天线端口与所述第五天线连接，用于选择输出所述第二网络的低频信号、所述第三网络的射频信号中的任一频段信号至所述第五天线。
  18. 根据权利要求1所述的射频前端模组，其中，所述第一供电模块采用包络跟踪供电模式提供所述第一供电电压，所述第二供电模块采用平均功率跟踪供电模式提供所述第二供电电压。
  19. 根据权利要求12所述的射频前端模组，其中，所述第一供电模块包括boost升压电路，所述第一供电模块的输出电压大于输入电压；所述第二供电模块的输出电压小于或等于输入电压。
  20. 一种射频系统，包括：
    射频收发器；及
    如权利要求1至19中任一项所述的射频前端模组，其中，所述第一发射模块、所述射频处理电路分别与所述射频收发器连接。
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