WO2023138193A1 - Appareil de coupe de tranche de silicium et dispositif de coupe de tranche de silicium - Google Patents

Appareil de coupe de tranche de silicium et dispositif de coupe de tranche de silicium Download PDF

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Publication number
WO2023138193A1
WO2023138193A1 PCT/CN2022/132054 CN2022132054W WO2023138193A1 WO 2023138193 A1 WO2023138193 A1 WO 2023138193A1 CN 2022132054 W CN2022132054 W CN 2022132054W WO 2023138193 A1 WO2023138193 A1 WO 2023138193A1
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WO
WIPO (PCT)
Prior art keywords
spray
silicon wafer
wire mesh
cutting device
wafer cutting
Prior art date
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PCT/CN2022/132054
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English (en)
Chinese (zh)
Inventor
王筱锋
范鑫
杨必红
Original Assignee
禄丰隆基硅材料有限公司
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Publication date
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Publication of WO2023138193A1 publication Critical patent/WO2023138193A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the utility model relates to the technical field of silicon wafer cutting, in particular to a silicon wafer cutting device and silicon wafer cutting equipment.
  • the cutting fluid spraying device in the prior art is located above the wire mesh. During actual use, the cutting fluid is directly sprayed onto the wire mesh below the silicon rods from top to bottom. During this process, the cutting fluid has a greater impact on the wire mesh. Based on this, it is easy to cause TTV (Total Thickness Variation, total thickness deviation) and line marks during the cutting process, which will affect the quality of the silicon wafer after cutting.
  • TTV Total Thickness Variation, total thickness deviation
  • the purpose of the utility model is to provide a silicon wafer cutting device and a silicon wafer cutting equipment, which are used to reduce the impact of the cutting fluid on the wire mesh and improve the quality of the silicon wafer.
  • the utility model provides a silicon wafer cutting device.
  • the silicon wafer cutting device includes a cutting assembly and a spraying assembly.
  • the cutting assembly includes a wire net and at least two main rollers, and every two main rollers are arranged at intervals.
  • the wire mesh is wound on the roll surface of the main roll.
  • the wire mesh is located under the silicon rods for cutting silicon rods.
  • the plane of the wire mesh between the two main rollers is perpendicular to the direction of cutting silicon rods, and part of the wire mesh is in contact with the silicon rods for cutting silicon rods, and part of the wire mesh constitutes a working wire mesh.
  • the spray assembly is located below the working wire net and is used for spraying the working wire net.
  • the silicon wafer cutting device provided by the utility model, since the working wire net between the two main rollers is used for cutting silicon rods, the silicon rods can be cut into silicon wafers at this time for further processing later. Then, since the spray assembly is located below the working wire net, it is used for spraying the working wire net. At this time, the spray assembly can cool and lubricate the working wire mesh. Further, since the cutting fluid in the spray assembly sprays the working wire net from bottom to top, at this time, the gravity effect of the cutting fluid on the working wire net can be reduced or ignored, and only the impact force of the cutting fluid sprayed on the working wire net can be considered.
  • the impact of the cutting fluid on the working wire net is reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire net during cutting, so as to improve the quality of silicon wafers.
  • the above spray assembly includes: a spray pipe and a delivery pipe.
  • the spray pipe is used for spraying the working line network, and the length extension direction of the spray pipe is parallel to the axial direction of the main roller.
  • the delivery pipeline communicates with the spray pipeline and is used for delivering the cutting fluid to the spray pipeline.
  • the spray pipe can be sprayed to most or all positions of the working wire net, so that the cutting fluid can cool and lubricate the working wire net, and then facilitate the later cutting of silicon rods.
  • the above-mentioned spray assembly only consists of two parts, the spray pipe and the delivery pipe, and has a simple structure and is easy to manufacture and install.
  • the radial cross-section of the above spray pipe is triangular, and a corner of the spray pipe close to the silicon rod has a chamfered edge.
  • a connecting hole is provided on the spraying pipe, and the conveying pipe communicates with the spraying pipe through the connecting hole.
  • Spray holes and/or spray slits are provided on the beveled edge, and the spray holes and/or spray slits are used for spraying cutting fluid to the working wire net.
  • the radial cross-section of the spray pipe is triangular, and a corner of the spray pipe close to the silicon rod has a chamfered edge.
  • the space occupied by the spray pipe can be reduced to reduce or avoid the impact on the positional connection relationship of other structures (for example, the impact on the wire mesh and the main roll). Based on this, the installation difficulty of the spray pipe can be reduced, and the work efficiency can be improved.
  • the delivery pipeline since the delivery pipeline communicates with the spray pipeline through the connecting hole. At this time, the content of the cutting fluid in the spray pipe can be ensured, and then the content of the cutting fluid sprayed onto the working wire net through the spray pipe can be ensured.
  • the angle between the cutting fluid sprayed from the spray pipe and the working wire net can be adjusted by adjusting the size of the first included angle A, that is, the falling point of the cutting fluid can be adjusted.
  • the adoption of the silicon wafer cutting device provided by the utility model can also improve the uniformity of the cutting fluid sprayed onto the working wire net.
  • the drop point of the cutting fluid can also be adjusted, so as to reduce or prevent the drop points of multiple cutting fluids from falling on the same position of the working wire net, so as to reduce the impact force of the cutting fluid on the working wire net.
  • the drop point of the cutting fluid can be further adjusted, so as to adjust the uniformity of the cutting fluid sprayed onto the working wire mesh. Based on this, the impact force of the cutting fluid on the working wire net can be further reduced, thereby reducing or avoiding the occurrence of TTV and line marks in the working wire net during the cutting process, so as to improve the quality of the silicon wafer.
  • a spray hole is opened on the above-mentioned chamfer, and when the cross section of the spray hole is circular, the inner diameter of the circular spray hole is 1 mm to 2 mm. And/or, when there is a spray slit on the chamfer, the width of the spray slit is 1 mm to 2 mm.
  • the content and impact force of the cutting fluid sprayed onto the working wire net can be controlled by adjusting the inner diameter of the circular spray hole and/or the width of the spray slit, so as to reduce or avoid the occurrence of TTV and line marks in the cutting process of the working wire net, so as to improve the quality of silicon wafers.
  • the above-mentioned delivery pipeline includes: a drainage tube and a drainage tube.
  • the guide tube communicates with the liquid supply source, and the liquid supply source is used for providing cutting fluid.
  • One end of the drainage tube is communicated with the diversion tube, and the other end of the drainage tube is communicated with the spray pipe.
  • the above-mentioned spray pipe includes a liquid distribution pipe and a plurality of spray pieces, and the liquid distribution pipe communicates with the drainage pipe.
  • a plurality of spray pieces are distributed on the liquid distribution pipe at intervals for spraying the working wire net.
  • the selectivity of the spray pipe is increased, so that the spray pipe can be adapted to different application scenarios, and the applicable scope of the spray pipe is expanded.
  • the above-mentioned silicon wafer cutting device further includes a scrap box, which is located under the working wire net and the silicon rods, and is used to collect impurities generated after cutting the silicon rods.
  • the above-mentioned spray assembly and the debris box are detachably connected.
  • the above-mentioned spray assembly and the debris box may exist independently.
  • the separately arranged spray assembly and the debris box can be transported to the work site respectively, and then the above structure is assembled to meet the actual needs.
  • the application range of the silicon wafer dicing device can be expanded.
  • the above-mentioned spray assembly and the debris box are integrally formed.
  • the above-mentioned silicon wafer cutting device includes two shower assemblies, and each shower assembly includes a shower pipe and a conveying pipe.
  • the two spray pipes are arranged opposite to each other, and each conveying pipe communicates with each spray pipe in one-to-one correspondence.
  • the two spray assemblies are independent of each other, and when one fails, the other will not be affected. At this time, the normal use of the silicon wafer cutting device can be ensured, that is, the probability that the entire silicon wafer cutting device stops working due to a failure of a spray assembly can be reduced or eliminated.
  • the utility model also provides a silicon wafer cutting device, including the silicon wafer cutting device described in the above technical solution.
  • the beneficial effect of the silicon wafer cutting equipment provided by the utility model is the same as that of the silicon wafer cutting device described in the above technical solution, and will not be repeated here.
  • Fig. 1 is the structural representation of silicon wafer cutting device and silicon rod in the utility model embodiment
  • Fig. 2 is the front view of Fig. 1 in the utility model embodiment
  • Fig. 3 is the top view of Fig. 1 in the utility model embodiment
  • Fig. 4 is a partial structural schematic diagram of a silicon wafer cutting device in an embodiment of the present invention.
  • Fig. 5 is a schematic structural view of the spray pipeline in the embodiment of the present invention.
  • Fig. 6 is a structural schematic diagram of the delivery pipeline in the embodiment of the utility model.
  • 2-spray assembly 20-spray pipe, 200-spray seam,
  • 21-conveying pipeline 210-drainage tube, 211-drainage tube,
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • plurality means two or more, unless otherwise specifically defined.
  • Several means one or more than one, unless otherwise clearly and specifically defined.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components.
  • installation can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components.
  • the embodiment of the present utility model provides a silicon wafer cutting device.
  • the silicon wafer cutting device includes a cutting assembly 1 and a spraying assembly 2 .
  • the cutting assembly 1 includes a wire web 10 and at least two main rollers 11, and every two main rollers 11 are arranged at intervals.
  • the wire mesh 10 is wound on the roll surface of the main roll 11 .
  • the wire mesh 10 is located below the silicon rod 3 for cutting the silicon rod 3 .
  • the plane of the wire mesh 10 between the two main rollers 11 is perpendicular to the direction of cutting the silicon rod 3 , and part of the wire mesh 10 is in contact with the silicon rod 3 for cutting the silicon rod 3 , and part of the wire mesh 10 constitutes the working wire mesh 100 .
  • the spray assembly 2 is located below the working wire mesh 100 and is used for spraying the working wire mesh 100 .
  • the number of the above-mentioned main rolls 11 can be two, three or four, etc.
  • the silicon wafer cutting device includes two identical main rollers 11, the two main rollers 11 are arranged at intervals, and the axes of the two main rollers 11 are parallel.
  • the silicon wafer cutting device includes three identical main rollers 11 , the straight lines with the centers of the three main rollers 11 can enclose to form a triangle.
  • the silicon wafer cutting device includes four identical main rollers 11 , the straight lines with the centers of the four main rollers 11 can enclose to form a quadrilateral.
  • the above-mentioned silicon wafer cutting device includes two identical main rollers 11.
  • the above-mentioned wire mesh 10 may be formed by diamond wire, and of course other cutting wires, such as steel wire, may also be used, which is not specifically limited here.
  • the silicon rod 3 can be cut into silicon wafers at this time, so as to facilitate further processing in the later stage.
  • the spray assembly 2 since the spray assembly 2 is located below the working wire mesh 100 , it is used to spray the working wire mesh 100 . At this time, the spray assembly 2 can cool and lubricate the working wire mesh 100 .
  • the cutting fluid in the spray assembly 2 sprays the working wire mesh 100 from bottom to top, at this time, the gravitational effect of the cutting fluid on the working wire mesh 100 can be reduced or ignored, and only the impact force of the cutting fluid sprayed onto the working wire mesh 100 can be considered. Based on this, compared with the spraying method in the prior art, the impact of the cutting fluid on the working wire mesh 100 is reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire mesh 100 during the cutting process, so as to improve the quality of silicon wafers.
  • the raw materials of the above-mentioned cutting fluid can be set according to the actual situation, and are not specifically limited here.
  • the use of the silicon wafer cutting device provided by the embodiment of the present invention can also reduce the occurrence of excessively large wire bows. Based on this, not only the quality of the silicon wafer can be further improved, but also the service life of the wire grid 10 can be extended.
  • the above-mentioned spray assembly 2 may include: a spray pipe 20 and a delivery pipe 21 .
  • the spray pipe 20 is used for spraying the working wire mesh 100
  • the length extension direction of the spray pipe 20 is parallel to the axial direction of the main roller 11 .
  • the delivery pipeline 21 communicates with the spray pipeline 20 and is used for delivering cutting fluid to the spray pipeline 20 .
  • the spray pipe 20 can be sprayed to most or all positions of the working wire mesh 100, so that the cutting fluid can cool and lubricate the working wire mesh 100, thereby facilitating the later cutting of the silicon rod 3.
  • the spray assembly 2 is composed of only two parts, the spray pipe 20 and the delivery pipe 21 , which is simple in structure and easy to manufacture and install.
  • the radial section of the spray pipe 20 is triangular in shape, and a corner of the spray pipe 20 close to the silicon rod 3 has a chamfered edge.
  • a connecting hole 22 is opened on the spraying pipe 20 , and the conveying pipe 21 communicates with the spraying pipe 20 through the connecting hole 22 .
  • spray holes and/or spray slots 200 on the chamfer and the spray holes and/or spray slots 200 are used to spray the cutting fluid to the working wire mesh 100.
  • the description here can be understood as that only spray holes are opened on the chamfered edge, or only the spray slit 200 is provided on the chamfered edge, or both the spray hole and the spray slit 200 are opened on the chamfered edge.
  • the radial section of the spray pipe 20 is triangular, and a corner of the spray pipe 20 close to the silicon rod 3 has a chamfered edge.
  • the space occupied by the spray pipe 20 can be reduced to reduce or avoid the impact on the positional connection relationship of other structures (for example, the impact on the wire mesh 10 and the main roll 11 ). Based on this, the difficulty of installing the spray pipe 20 can be reduced, and the working efficiency can be improved.
  • the delivery pipe 21 communicates with the spray pipe 20 through the connecting hole 22 .
  • the content of the cutting fluid in the spray pipe 20 can be ensured, and then the content of the cutting fluid sprayed onto the working wire mesh 100 through the spray pipe 20 can be ensured.
  • the chamfering edge is provided with spray holes and/or the chamfering edge has a spray slit 200 for spraying cutting fluid to the working wire mesh 100.
  • the angle between the cutting fluid sprayed from the spray pipe 20 and the working wire mesh 100 can be adjusted by adjusting the size of the first included angle A, that is, the falling point of the cutting fluid can be adjusted.
  • the above-mentioned first included angle A may be 0°, 20°, 45°, 125° or 180° and so on.
  • using the silicon wafer cutting device provided by the embodiment of the present invention can also improve the uniformity of the cutting fluid sprayed onto the working wire mesh 100 .
  • the falling point of the cutting fluid can also be adjusted, so as to reduce or prevent the falling points of multiple cutting fluids from falling on the same position of the working wire mesh 100, so as to reduce the impact force of the cutting fluid on the working wire mesh 100.
  • the drop point of the cutting fluid can be further adjusted, so as to adjust the uniformity of the cutting fluid sprayed onto the working wire mesh 100 .
  • the impact force of the cutting fluid on the working wire mesh 100 can be further reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire mesh 100 during the cutting process, so as to improve the quality of the silicon wafer.
  • the above-mentioned second included angle B may be 1°, 20°, 36°, 56° or 89°, etc.
  • a spray hole is opened on the chamfer, and when the cross section of the spray hole is circular, the inner diameter of the circular spray hole is 1 mm to 2 mm. And/or, when there is a spray slit 200 on the chamfer, the width of the spray slit 200 is 1 mm to 2 mm.
  • the inner diameter of the circular spray hole may be 1mm, 1.2mm, 1.4mm, 1.8mm or 2mm.
  • the width of the spray slit 200 may be 1mm, 1.05mm, 1.3mm, 1.5mm or 2mm.
  • the above-mentioned first included angle A is 60°
  • the second included angle B is 45°
  • the width of the spray slit 200 is 1mm.
  • the delivery pipeline may include: a drainage tube 210 and a drainage tube 211 .
  • the guide tube 210 communicates with a liquid supply source, which is used to provide cutting fluid.
  • One end of the drainage tube 211 communicates with the guide tube 210
  • the other end of the drainage tube 211 communicates with the spray pipe 20 .
  • the length, pipe diameter, material, etc. of the above-mentioned draft tube 210 and draft tube 211 can be set according to actual conditions, and are not specifically limited here.
  • the spray pipe 20 may further include a liquid distribution pipe 212 and a plurality of spray elements 213 , and the liquid distribution pipe 212 communicates with the drainage pipe 211 .
  • a plurality of spray elements 213 are distributed on the liquid distribution pipe 212 at intervals for spraying the working wire mesh 100 .
  • the length of the liquid pipe 212 is greater than or equal to the length of the silicon rod 3 or the width of the working wire mesh 100 .
  • the shower 213 mentioned above may be the shower 213 in the prior art, which will not be described in detail here.
  • a plurality of spraying elements 213 may be distributed on the liquid distribution pipe 212 at equal intervals, or may be distributed on the liquid distribution pipe 212 at unequal intervals.
  • the cutting fluid spraying capability of the above-mentioned single shower member 213 can be set and adjusted according to actual conditions.
  • the above-mentioned guide pipe 210 may be arranged outside the main roller 11 , and the spraying pipe 20 is located under the working wire mesh 100 .
  • the above-mentioned silicon wafer cutting device further includes a scrap box 4 , which is located under the working wire net 100 and the silicon rod 3 for collecting impurities generated after cutting the silicon rod 3 .
  • the spray assembly is detachably connected to the debris box. And/or, the spray assembly and the debris box are integrally formed.
  • the above-mentioned spray assembly and the debris box are detachably connected.
  • the above-mentioned spray assembly and the debris box may exist independently.
  • the separately arranged spray assembly and the debris box can be transported to the work site respectively, and then the above structure is assembled to meet the actual needs.
  • the application range of the silicon wafer dicing device can be expanded.
  • detachable connection such as bolt connection, card connection and the like.
  • the above-mentioned spray assembly and the debris box are integrally formed.
  • the above-mentioned spray assembly and the debris box can also be welded.
  • the scrap box 4 is located between the two main rollers 11, and the installation position of the scrap box 4 does not affect the normal movement of the silicon rod 3 in the scrap box 4.
  • a spray assembly 2 is arranged on both sides of the scrap box 4 and between the scrap box 4 and any one of the main rollers 11 .
  • the connection holes 22 are drilled on the side wall of the debris box 4 (ie, the side wall connected to the spray pipe 20 ) and the side wall of the spray pipe 20 .
  • the delivery pipe 21 matching the size of the connecting hole 22 is installed.
  • the above-mentioned delivery pipe 21 may be a Z-shaped pipe.
  • the Z-shaped pipe can avoid the box body and corners of the scrap box 4 to ensure smooth circulation of the cutting fluid and prolong the service life of the conveying pipeline 21 .
  • weld a hoop at the vertically downward tail of the Z-shaped tube to facilitate connection with other cutting fluid supply pipes.
  • the spray pipe 20 needs to be cleaned regularly. For example, clean water can be used for cleaning, and of course other cleaning solutions can also be used for cleaning. At this time, it is possible to avoid depositing too much cutting liquid impurities in the spraying pipe 20 and contaminating the silicon rods 3 and the working wire network 100 .
  • the above-mentioned silicon wafer cutting device may include two shower assemblies 2 , and each shower assembly 2 includes a shower pipe 20 and a delivery pipe 21 .
  • the two spray pipes 20 are arranged opposite to each other, and each delivery pipe 21 communicates with each spray pipe 20 in a one-to-one correspondence.
  • the two spray assemblies 2 are independent of each other, and when one fails, the other will not be affected. At this time, the normal use of the silicon wafer cutting device can be ensured, that is, the probability that the entire silicon wafer cutting device stops working due to a failure of a spray assembly 2 can be reduced or eliminated.
  • the embodiment of the present utility model also provides a silicon wafer cutting device, including the silicon wafer cutting device described in the above technical solution.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un appareil de coupe de tranche de silicium et un dispositif de coupe de tranche de silicium. L'appareil de coupe de tranche de silicium comprend un ensemble de coupe (1) et un ensemble de pulvérisation (2). L'ensemble de coupe (1) comprend un treillis métallique (10) et au moins deux cylindres principaux (11) et tous les deux cylindres principaux (11) sont agencés à des intervalles. Le treillis métallique (10) est enroulé sur la surface cylindrique du cylindre principal (11) dans la direction axiale du cylindre principal (11). Le treillis métallique (10) est situé au-dessous de la tige de silicium (3) pour couper la tige de silicium (3) dans la direction de coupe de la tige de silicium (3). Le plan dans lequel est situé le treillis métallique (10) entre les deux cylindres principaux (11) est perpendiculaire à la direction de coupe de la tige de silicium (3) et une partie du treillis métallique (10) est en contact avec la tige de silicium (3) et est utilisée pour couper la tige de silicium (3) et la partie du treillis métallique (10) constitue un treillis métallique de travail (100). L'ensemble de pulvérisation (2) est situé au-dessous du treillis métallique de travail (100) et est utilisé pour pulvériser le treillis métallique de travail (100).
PCT/CN2022/132054 2022-01-19 2022-11-15 Appareil de coupe de tranche de silicium et dispositif de coupe de tranche de silicium WO2023138193A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202220140948.7U CN216884680U (zh) 2022-01-19 2022-01-19 硅片切割装置和硅片切割设备
CN202220140948.7 2022-01-19

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WO2023138193A1 true WO2023138193A1 (fr) 2023-07-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN216884680U (zh) * 2022-01-19 2022-07-05 禄丰隆基硅材料有限公司 硅片切割装置和硅片切割设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0985737A (ja) * 1995-09-22 1997-03-31 Toray Eng Co Ltd ワイヤ式切断装置
JP2001328054A (ja) * 2000-05-24 2001-11-27 Toshiba Ceramics Co Ltd ワイヤソーおよびワイヤソー切断方法
CN101797713A (zh) * 2010-04-08 2010-08-11 南京航空航天大学 硅片的磨削/电解复合多线切割加工方法
CN203863859U (zh) * 2013-12-10 2014-10-08 特变电工新疆新能源股份有限公司 一种硅片切割用砂浆喷嘴和硅片切割机
CN210999505U (zh) * 2019-05-10 2020-07-14 西安普晶半导体设备有限公司 一种多线切片机砂浆管
CN216884680U (zh) * 2022-01-19 2022-07-05 禄丰隆基硅材料有限公司 硅片切割装置和硅片切割设备

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0985737A (ja) * 1995-09-22 1997-03-31 Toray Eng Co Ltd ワイヤ式切断装置
JP2001328054A (ja) * 2000-05-24 2001-11-27 Toshiba Ceramics Co Ltd ワイヤソーおよびワイヤソー切断方法
CN101797713A (zh) * 2010-04-08 2010-08-11 南京航空航天大学 硅片的磨削/电解复合多线切割加工方法
CN203863859U (zh) * 2013-12-10 2014-10-08 特变电工新疆新能源股份有限公司 一种硅片切割用砂浆喷嘴和硅片切割机
CN210999505U (zh) * 2019-05-10 2020-07-14 西安普晶半导体设备有限公司 一种多线切片机砂浆管
CN216884680U (zh) * 2022-01-19 2022-07-05 禄丰隆基硅材料有限公司 硅片切割装置和硅片切割设备

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