WO2023138193A1

WO2023138193A1 - Silicon wafer cutting apparatus and silicon wafer cutting device

Info

Publication number: WO2023138193A1
Application number: PCT/CN2022/132054
Authority: WO
Inventors: 王筱锋; 范鑫; 杨必红
Original assignee: 禄丰隆基硅材料有限公司
Priority date: 2022-01-19
Filing date: 2022-11-15
Publication date: 2023-07-27
Also published as: CN216884680U

Abstract

A silicon wafer cutting apparatus and a silicon wafer cutting device. The silicon wafer cutting apparatus comprises a cutting assembly (1) and a spraying assembly (2). The cutting assembly (1) comprises a wire mesh (10) and at least two main rollers (11), and every two main rollers (11) are arranged at intervals. The wire mesh (10) is wound on the roller surface of the main roller (11) along the axial direction of the main roller (11). The wire mesh (10) is located below the silicon rod (3) for cutting the silicon rod (3) along the direction of cutting the silicon rod (3). The plane where the wire mesh (10) between the two main rollers (11) is located is perpendicular to the direction of cutting the silicon rod (3), and part of the wire mesh (10) is in contact with the silicon rod (3) and is used for cutting the silicon rod (3), and the part of the wire mesh (10) constitutes a working wire mesh (100). The spraying assembly (2) is located below the working wire mesh (100) and is used for spraying the working wire mesh (100).

Description

Silicon wafer cutting device and silicon wafer cutting equipment

This application claims the priority of a Chinese patent application with application number 202220140948.7 and titled "Silicon Wafer Cutting Device and Silicon Wafer Cutting Equipment" filed with the China Patent Office on January 19, 2022, the entire contents of which are incorporated herein by reference.

technical field

The utility model relates to the technical field of silicon wafer cutting, in particular to a silicon wafer cutting device and silicon wafer cutting equipment.

Background technique

The cutting fluid spraying device in the prior art is located above the wire mesh. During actual use, the cutting fluid is directly sprayed onto the wire mesh below the silicon rods from top to bottom. During this process, the cutting fluid has a greater impact on the wire mesh. Based on this, it is easy to cause TTV (Total Thickness Variation, total thickness deviation) and line marks during the cutting process, which will affect the quality of the silicon wafer after cutting.

Utility model content

The purpose of the utility model is to provide a silicon wafer cutting device and a silicon wafer cutting equipment, which are used to reduce the impact of the cutting fluid on the wire mesh and improve the quality of the silicon wafer.

In order to achieve the above purpose, in a first aspect, the utility model provides a silicon wafer cutting device. The silicon wafer cutting device includes a cutting assembly and a spraying assembly. The cutting assembly includes a wire net and at least two main rollers, and every two main rollers are arranged at intervals. Along the axial direction of the main roll, the wire mesh is wound on the roll surface of the main roll. Along the direction of cutting silicon rods, the wire mesh is located under the silicon rods for cutting silicon rods. Wherein, the plane of the wire mesh between the two main rollers is perpendicular to the direction of cutting silicon rods, and part of the wire mesh is in contact with the silicon rods for cutting silicon rods, and part of the wire mesh constitutes a working wire mesh. The spray assembly is located below the working wire net and is used for spraying the working wire net.

Compared with the prior art, in the silicon wafer cutting device provided by the utility model, since the working wire net between the two main rollers is used for cutting silicon rods, the silicon rods can be cut into silicon wafers at this time for further processing later. Then, since the spray assembly is located below the working wire net, it is used for spraying the working wire net. At this time, the spray assembly can cool and lubricate the working wire mesh. Further, since the cutting fluid in the spray assembly sprays the working wire net from bottom to top, at this time, the gravity effect of the cutting fluid on the working wire net can be reduced or ignored, and only the impact force of the cutting fluid sprayed on the working wire net can be considered. Based on this, compared with the spraying method in the prior art, the impact of the cutting fluid on the working wire net is reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire net during cutting, so as to improve the quality of silicon wafers.

In an implementation manner, the above spray assembly includes: a spray pipe and a delivery pipe. The spray pipe is used for spraying the working line network, and the length extension direction of the spray pipe is parallel to the axial direction of the main roller. The delivery pipeline communicates with the spray pipeline and is used for delivering the cutting fluid to the spray pipeline.

In the case of adopting the above technical solution, since the length extension direction of the spray pipe is parallel to the axial direction of the main roller, at this time, the spray pipe can be sprayed to most or all positions of the working wire net, so that the cutting fluid can cool and lubricate the working wire net, and then facilitate the later cutting of silicon rods. In addition, the above-mentioned spray assembly only consists of two parts, the spray pipe and the delivery pipe, and has a simple structure and is easy to manufacture and install.

In an implementation manner, the radial cross-section of the above spray pipe is triangular, and a corner of the spray pipe close to the silicon rod has a chamfered edge. There is a first included angle A between the chamfer and the plane where the wire mesh is located, and 0°≤A≤180°. A connecting hole is provided on the spraying pipe, and the conveying pipe communicates with the spraying pipe through the connecting hole. Spray holes and/or spray slits are provided on the beveled edge, and the spray holes and/or spray slits are used for spraying cutting fluid to the working wire net.

In the case of adopting the above technical solution, in the first aspect, since the radial cross-section of the spray pipe is triangular, and a corner of the spray pipe close to the silicon rod has a chamfered edge. At this time, the space occupied by the spray pipe can be reduced to reduce or avoid the impact on the positional connection relationship of other structures (for example, the impact on the wire mesh and the main roll). Based on this, the installation difficulty of the spray pipe can be reduced, and the work efficiency can be improved. In the second aspect, since the delivery pipeline communicates with the spray pipeline through the connecting hole. At this time, the content of the cutting fluid in the spray pipe can be ensured, and then the content of the cutting fluid sprayed onto the working wire net through the spray pipe can be ensured. Next, since there is a first angle A between the chamfering edge and the plane where the wire mesh is located, 0°≤A≤180°, and the chamfering edge is provided with spray holes and/or the chamfering edge has a spray slit for spraying the cutting fluid to the working wire mesh. At this time, the angle between the cutting fluid sprayed from the spray pipe and the working wire net can be adjusted by adjusting the size of the first included angle A, that is, the falling point of the cutting fluid can be adjusted. Based on this, it is possible to reduce or avoid that the falling points of multiple cutting fluids fall on the same position of the working wire net, so as to reduce the impact force of the cutting fluid on the working wire net, thereby reducing or avoiding the occurrence of TTV and line marks in the working wire net during the cutting process, so as to improve the quality of silicon wafers. Furthermore, the adoption of the silicon wafer cutting device provided by the utility model can also improve the uniformity of the cutting fluid sprayed onto the working wire net.

In an implementation manner, there is a second included angle B between the central axis of the spray hole and/or the spray slit and the plane where the wire mesh is located, where 0°<B<90°.

In the case of adopting the above technical solution, in the first aspect, by adjusting the size of the second included angle B, the drop point of the cutting fluid can also be adjusted, so as to reduce or prevent the drop points of multiple cutting fluids from falling on the same position of the working wire net, so as to reduce the impact force of the cutting fluid on the working wire net. In the second aspect, through the cooperation of the first included angle A and the second included angle B, the drop point of the cutting fluid can be further adjusted, so as to adjust the uniformity of the cutting fluid sprayed onto the working wire mesh. Based on this, the impact force of the cutting fluid on the working wire net can be further reduced, thereby reducing or avoiding the occurrence of TTV and line marks in the working wire net during the cutting process, so as to improve the quality of the silicon wafer.

In an implementation manner, a spray hole is opened on the above-mentioned chamfer, and when the cross section of the spray hole is circular, the inner diameter of the circular spray hole is 1 mm to 2 mm. And/or, when there is a spray slit on the chamfer, the width of the spray slit is 1 mm to 2 mm.

In the case of adopting the above technical solution, the content and impact force of the cutting fluid sprayed onto the working wire net can be controlled by adjusting the inner diameter of the circular spray hole and/or the width of the spray slit, so as to reduce or avoid the occurrence of TTV and line marks in the cutting process of the working wire net, so as to improve the quality of silicon wafers.

In an implementation manner, the above-mentioned delivery pipeline includes: a drainage tube and a drainage tube. The guide tube communicates with the liquid supply source, and the liquid supply source is used for providing cutting fluid. One end of the drainage tube is communicated with the diversion tube, and the other end of the drainage tube is communicated with the spray pipe.

In an implementation manner, the above-mentioned spray pipe includes a liquid distribution pipe and a plurality of spray pieces, and the liquid distribution pipe communicates with the drainage pipe. Along the extending direction of the length of the liquid distribution pipe, a plurality of spray pieces are distributed on the liquid distribution pipe at intervals for spraying the working wire net.

In the case of adopting the above technical solution, the selectivity of the spray pipe is increased, so that the spray pipe can be adapted to different application scenarios, and the applicable scope of the spray pipe is expanded.

In an implementation manner, the above-mentioned silicon wafer cutting device further includes a scrap box, which is located under the working wire net and the silicon rods, and is used to collect impurities generated after cutting the silicon rods.

In the case of adopting the above-mentioned technical solution, it is convenient to centrally process the above-mentioned impurities in the later stage. At this time, not only time can be saved, but work efficiency can be improved. At the same time, it can also avoid the injury of the staff when cleaning up the impurities in the later stage.

In an implementation manner, the above-mentioned spray assembly and the debris box are detachably connected.

In the case of adopting the above-mentioned technical solution, the above-mentioned spray assembly and the debris box may exist independently. When the entrance and exit of the work site are small or there is a curved passage, the separately arranged spray assembly and the debris box can be transported to the work site respectively, and then the above structure is assembled to meet the actual needs. In this case, the application range of the silicon wafer dicing device can be expanded.

In an implementation manner, the above-mentioned spray assembly and the debris box are integrally formed.

In the case of adopting the above technical solution, it is not necessary to reassemble the silicon wafer cutting device (spray assembly and scrap box), so as to reduce or eliminate errors during assembly, thereby saving adjustment time and improving work efficiency.

In an implementation manner, the above-mentioned silicon wafer cutting device includes two shower assemblies, and each shower assembly includes a shower pipe and a conveying pipe. The two spray pipes are arranged opposite to each other, and each conveying pipe communicates with each spray pipe in one-to-one correspondence.

In the case of adopting the above technical solution, the two spray assemblies are independent of each other, and when one fails, the other will not be affected. At this time, the normal use of the silicon wafer cutting device can be ensured, that is, the probability that the entire silicon wafer cutting device stops working due to a failure of a spray assembly can be reduced or eliminated.

In the second aspect, the utility model also provides a silicon wafer cutting device, including the silicon wafer cutting device described in the above technical solution.

Compared with the prior art, the beneficial effect of the silicon wafer cutting equipment provided by the utility model is the same as that of the silicon wafer cutting device described in the above technical solution, and will not be repeated here.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other accompanying drawings can also be obtained according to these drawings without paying creative work.

The accompanying drawings described here are used to provide a further understanding of the utility model and constitute a part of the utility model. The schematic embodiments of the utility model and their descriptions are used to explain the utility model and do not constitute improper limitations to the utility model. In the attached picture:

Fig. 1 is the structural representation of silicon wafer cutting device and silicon rod in the utility model embodiment;

Fig. 2 is the front view of Fig. 1 in the utility model embodiment;

Fig. 3 is the top view of Fig. 1 in the utility model embodiment;

Fig. 4 is a partial structural schematic diagram of a silicon wafer cutting device in an embodiment of the present invention;

Fig. 5 is a schematic structural view of the spray pipeline in the embodiment of the present invention;

Fig. 6 is a structural schematic diagram of the delivery pipeline in the embodiment of the utility model.

Reference signs:

1-cutting assembly, 10-wire mesh, 100-working wire mesh, 11-main roller;

2-spray assembly, 20-spray pipe, 200-spray seam,

21-conveying pipeline, 210-drainage tube, 211-drainage tube,

212-dispensing pipe, 213-spray piece; 22-connecting hole,

3-silicon rod, 4-crumb box.

specific embodiment

In order to make the technical problems, technical solutions and beneficial effects to be solved by the utility model clearer, the utility model will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model, and are not intended to limit the utility model.

It should be noted that when an element is referred to as being “fixed” or “disposed on” another element, it may be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present utility model, "plurality" means two or more, unless otherwise specifically defined. "Several" means one or more than one, unless otherwise clearly and specifically defined.

In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right" etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present utility model.

In the description of the present utility model, it should be noted that, unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal communication of two components or the interaction relationship between two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present utility model according to specific situations.

Based on the description in the background technology section, since the mortar pipe in the prior art is above the wire mesh, at this time, the cutting fluid is sprayed down directly onto the wire mesh below the silicon rods in a cascading manner from top to bottom. Further, due to the influence of the structure of the mortar pipe and the installation position, the variables in the actual work process increase and the difficulty of control increases.

In order to solve the above technical problems, in the first aspect, the embodiment of the present utility model provides a silicon wafer cutting device. Referring to FIG. 1 and FIG. 2 , the silicon wafer cutting device includes a cutting assembly 1 and a spraying assembly 2 . The cutting assembly 1 includes a wire web 10 and at least two main rollers 11, and every two main rollers 11 are arranged at intervals. Along the axial direction of the main roll 11 , the wire mesh 10 is wound on the roll surface of the main roll 11 . Along the direction of cutting the silicon rod 3 , the wire mesh 10 is located below the silicon rod 3 for cutting the silicon rod 3 . Wherein, the plane of the wire mesh 10 between the two main rollers 11 is perpendicular to the direction of cutting the silicon rod 3 , and part of the wire mesh 10 is in contact with the silicon rod 3 for cutting the silicon rod 3 , and part of the wire mesh 10 constitutes the working wire mesh 100 . The spray assembly 2 is located below the working wire mesh 100 and is used for spraying the working wire mesh 100 .

Referring to FIG. 1 and FIG. 2 , the number of the above-mentioned main rolls 11 can be two, three or four, etc. When the silicon wafer cutting device includes two identical main rollers 11, the two main rollers 11 are arranged at intervals, and the axes of the two main rollers 11 are parallel. When the silicon wafer cutting device includes three identical main rollers 11 , the straight lines with the centers of the three main rollers 11 can enclose to form a triangle. When the silicon wafer cutting device includes four identical main rollers 11 , the straight lines with the centers of the four main rollers 11 can enclose to form a quadrilateral. It should be understood that the above description is only for understanding, not for specific limitation. In the embodiment of the present utility model, the above-mentioned silicon wafer cutting device includes two identical main rollers 11. In addition, the above-mentioned wire mesh 10 may be formed by diamond wire, and of course other cutting wires, such as steel wire, may also be used, which is not specifically limited here.

Referring to Fig. 1 to Fig. 3, in the silicon wafer cutting device provided by the embodiment of the present invention, since the working wire mesh 100 between the two main rollers 11 is used to cut the silicon rod 3, the silicon rod 3 can be cut into silicon wafers at this time, so as to facilitate further processing in the later stage. Next, since the spray assembly 2 is located below the working wire mesh 100 , it is used to spray the working wire mesh 100 . At this time, the spray assembly 2 can cool and lubricate the working wire mesh 100 . Further, since the cutting fluid in the spray assembly 2 sprays the working wire mesh 100 from bottom to top, at this time, the gravitational effect of the cutting fluid on the working wire mesh 100 can be reduced or ignored, and only the impact force of the cutting fluid sprayed onto the working wire mesh 100 can be considered. Based on this, compared with the spraying method in the prior art, the impact of the cutting fluid on the working wire mesh 100 is reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire mesh 100 during the cutting process, so as to improve the quality of silicon wafers. The raw materials of the above-mentioned cutting fluid can be set according to the actual situation, and are not specifically limited here. In addition, the use of the silicon wafer cutting device provided by the embodiment of the present invention can also reduce the occurrence of excessively large wire bows. Based on this, not only the quality of the silicon wafer can be further improved, but also the service life of the wire grid 10 can be extended.

As a possible implementation manner, referring to FIG. 2 and FIG. 4 , the above-mentioned spray assembly 2 may include: a spray pipe 20 and a delivery pipe 21 . The spray pipe 20 is used for spraying the working wire mesh 100 , and the length extension direction of the spray pipe 20 is parallel to the axial direction of the main roller 11 . The delivery pipeline 21 communicates with the spray pipeline 20 and is used for delivering cutting fluid to the spray pipeline 20 .

In the case of adopting the above-mentioned technical solution, referring to Fig. 2 and Fig. 4, since the length extension direction of the spray pipe 20 is parallel to the axial direction of the main roller 11, at this time, the spray pipe 20 can be sprayed to most or all positions of the working wire mesh 100, so that the cutting fluid can cool and lubricate the working wire mesh 100, thereby facilitating the later cutting of the silicon rod 3. In addition, the spray assembly 2 is composed of only two parts, the spray pipe 20 and the delivery pipe 21 , which is simple in structure and easy to manufacture and install.

In an optional manner, referring to FIG. 1 to FIG. 5 , the radial section of the spray pipe 20 is triangular in shape, and a corner of the spray pipe 20 close to the silicon rod 3 has a chamfered edge. There is a first included angle A between the chamfer and the plane where the wire mesh 10 is located, and 0°≤A≤180°. A connecting hole 22 is opened on the spraying pipe 20 , and the conveying pipe 21 communicates with the spraying pipe 20 through the connecting hole 22 . There are spray holes and/or spray slots 200 on the chamfer, and the spray holes and/or spray slots 200 are used to spray the cutting fluid to the working wire mesh 100. The description here can be understood as that only spray holes are opened on the chamfered edge, or only the spray slit 200 is provided on the chamfered edge, or both the spray hole and the spray slit 200 are opened on the chamfered edge.

In the case of adopting the above technical solution, referring to FIG. 1 to FIG. 5 , in the first aspect, since the radial section of the spray pipe 20 is triangular, and a corner of the spray pipe 20 close to the silicon rod 3 has a chamfered edge. At this time, the space occupied by the spray pipe 20 can be reduced to reduce or avoid the impact on the positional connection relationship of other structures (for example, the impact on the wire mesh 10 and the main roll 11 ). Based on this, the difficulty of installing the spray pipe 20 can be reduced, and the working efficiency can be improved. In the second aspect, since the delivery pipe 21 communicates with the spray pipe 20 through the connecting hole 22 . At this time, the content of the cutting fluid in the spray pipe 20 can be ensured, and then the content of the cutting fluid sprayed onto the working wire mesh 100 through the spray pipe 20 can be ensured. Next, since there is a first angle A between the chamfering edge and the plane where the wire mesh 10 is located, 0°≤A≤180°, and the chamfering edge is provided with spray holes and/or the chamfering edge has a spray slit 200 for spraying cutting fluid to the working wire mesh 100. At this time, the angle between the cutting fluid sprayed from the spray pipe 20 and the working wire mesh 100 can be adjusted by adjusting the size of the first included angle A, that is, the falling point of the cutting fluid can be adjusted. Based on this, it is possible to reduce or avoid that the falling points of multiple cutting fluids all fall on the same position of the working wire mesh 100, so as to reduce the impact force of the cutting fluid on the working wire mesh 100, thereby reducing or avoiding the occurrence of TTV and line marks in the cutting process of the working wire mesh 100, so as to improve the quality of silicon wafers. Exemplarily, the above-mentioned first included angle A may be 0°, 20°, 45°, 125° or 180° and so on. Furthermore, using the silicon wafer cutting device provided by the embodiment of the present invention can also improve the uniformity of the cutting fluid sprayed onto the working wire mesh 100 .

In an optional manner, referring to FIG. 2 and FIG. 5 , there is a second included angle B between the central axis of the spray hole and/or the spray slit 200 and the plane of the wire mesh 10 , where 0°<B<90°.

In the case of adopting the above-mentioned technical solution, referring to FIG. 2 and FIG. 5 , in the first aspect, by adjusting the size of the second included angle B, the falling point of the cutting fluid can also be adjusted, so as to reduce or prevent the falling points of multiple cutting fluids from falling on the same position of the working wire mesh 100, so as to reduce the impact force of the cutting fluid on the working wire mesh 100. In the second aspect, through the cooperation of the first included angle A and the second included angle B, the drop point of the cutting fluid can be further adjusted, so as to adjust the uniformity of the cutting fluid sprayed onto the working wire mesh 100 . Based on this, the impact force of the cutting fluid on the working wire mesh 100 can be further reduced, thereby reducing or avoiding the occurrence of TTV and line marks on the working wire mesh 100 during the cutting process, so as to improve the quality of the silicon wafer. Exemplarily, the above-mentioned second included angle B may be 1°, 20°, 36°, 56° or 89°, etc.

In an optional manner, referring to Fig. 2 and Fig. 5, a spray hole is opened on the chamfer, and when the cross section of the spray hole is circular, the inner diameter of the circular spray hole is 1 mm to 2 mm. And/or, when there is a spray slit 200 on the chamfer, the width of the spray slit 200 is 1 mm to 2 mm. At this time, by adjusting the inner diameter of the circular spray hole and/or the width of the spray slit 200, the content and impact force of the cutting fluid sprayed onto the working wire mesh 100 can be controlled, so as to reduce or avoid the occurrence of TTV and line marks in the cutting process of the working wire mesh 100, so as to improve the quality of silicon wafers. Exemplarily, the inner diameter of the circular spray hole may be 1mm, 1.2mm, 1.4mm, 1.8mm or 2mm. The width of the spray slit 200 may be 1mm, 1.05mm, 1.3mm, 1.5mm or 2mm.

In the embodiment of the utility model, referring to Fig. 2 and Fig. 5, the above-mentioned first included angle A is 60°, the second included angle B is 45°, there is a spray slit 200 on the chamfer, and the width of the spray slit 200 is 1mm. When the spray pipe 20 is filled with cutting fluid, the cutting fluid can be sprayed onto the working wire mesh 100 through the above-mentioned spray holes and/or spray slits 200 .

In an optional manner, referring to FIG. 6 , the delivery pipeline may include: a drainage tube 210 and a drainage tube 211 . The guide tube 210 communicates with a liquid supply source, which is used to provide cutting fluid. One end of the drainage tube 211 communicates with the guide tube 210 , and the other end of the drainage tube 211 communicates with the spray pipe 20 . The length, pipe diameter, material, etc. of the above-mentioned draft tube 210 and draft tube 211 can be set according to actual conditions, and are not specifically limited here.

In an optional manner, referring to FIGS. 1 to 6 , the spray pipe 20 may further include a liquid distribution pipe 212 and a plurality of spray elements 213 , and the liquid distribution pipe 212 communicates with the drainage pipe 211 . Along the extending direction of the length of the liquid distribution pipe 212 , a plurality of spray elements 213 are distributed on the liquid distribution pipe 212 at intervals for spraying the working wire mesh 100 . At this time, the selectivity of the spray pipe 20 is increased, so that the spray pipe 20 can be adapted to different application scenarios, and the applicable range of the spray pipe 20 is expanded. The length of the liquid pipe 212 is greater than or equal to the length of the silicon rod 3 or the width of the working wire mesh 100 . The shower 213 mentioned above may be the shower 213 in the prior art, which will not be described in detail here. A plurality of spraying elements 213 may be distributed on the liquid distribution pipe 212 at equal intervals, or may be distributed on the liquid distribution pipe 212 at unequal intervals. The cutting fluid spraying capability of the above-mentioned single shower member 213 can be set and adjusted according to actual conditions. In the embodiment of the present utility model, the above-mentioned guide pipe 210 may be arranged outside the main roller 11 , and the spraying pipe 20 is located under the working wire mesh 100 .

As a possible implementation, referring to FIG. 1 and FIG. 2 , the above-mentioned silicon wafer cutting device further includes a scrap box 4 , which is located under the working wire net 100 and the silicon rod 3 for collecting impurities generated after cutting the silicon rod 3 .

As a possible implementation, the spray assembly is detachably connected to the debris box. And/or, the spray assembly and the debris box are integrally formed.

In an optional manner, the above-mentioned spray assembly and the debris box are detachably connected.

In the case of adopting the above-mentioned technical solution, the above-mentioned spray assembly and the debris box may exist independently. When the entrance and exit of the work site are small or there is a curved passage, the separately arranged spray assembly and the debris box can be transported to the work site respectively, and then the above structure is assembled to meet the actual needs. In this case, the application range of the silicon wafer dicing device can be expanded. There are various manners of the above-mentioned detachable connection, such as bolt connection, card connection and the like.

In another optional manner, the above-mentioned spray assembly and the debris box are integrally formed.

Certainly, the above-mentioned spray assembly and the debris box can also be welded.

Referring to Fig. 1 to Fig. 6, in the embodiment of the present utility model, the scrap box 4 is located between the two main rollers 11, and the installation position of the scrap box 4 does not affect the normal movement of the silicon rod 3 in the scrap box 4. Next, a spray assembly 2 is arranged on both sides of the scrap box 4 and between the scrap box 4 and any one of the main rollers 11 . When assembling the spray assembly 2 and the debris box 4 , firstly, the connection holes 22 are drilled on the side wall of the debris box 4 (ie, the side wall connected to the spray pipe 20 ) and the side wall of the spray pipe 20 . Next, the delivery pipe 21 matching the size of the connecting hole 22 is installed. For example, the above-mentioned delivery pipe 21 may be a Z-shaped pipe. At this time, the Z-shaped pipe can avoid the box body and corners of the scrap box 4 to ensure smooth circulation of the cutting fluid and prolong the service life of the conveying pipeline 21 . Afterwards, weld a hoop at the vertically downward tail of the Z-shaped tube to facilitate connection with other cutting fluid supply pipes. During actual use, the spray pipe 20 needs to be cleaned regularly. For example, clean water can be used for cleaning, and of course other cleaning solutions can also be used for cleaning. At this time, it is possible to avoid depositing too much cutting liquid impurities in the spraying pipe 20 and contaminating the silicon rods 3 and the working wire network 100 .

In an optional manner, referring to FIG. 1 and FIG. 2 , the above-mentioned silicon wafer cutting device may include two shower assemblies 2 , and each shower assembly 2 includes a shower pipe 20 and a delivery pipe 21 . The two spray pipes 20 are arranged opposite to each other, and each delivery pipe 21 communicates with each spray pipe 20 in a one-to-one correspondence.

In the case of adopting the above technical solution, referring to Fig. 1 and Fig. 2, the two spray assemblies 2 are independent of each other, and when one fails, the other will not be affected. At this time, the normal use of the silicon wafer cutting device can be ensured, that is, the probability that the entire silicon wafer cutting device stops working due to a failure of a spray assembly 2 can be reduced or eliminated.

In the second aspect, the embodiment of the present utility model also provides a silicon wafer cutting device, including the silicon wafer cutting device described in the above technical solution.

The beneficial effect of the silicon wafer cutting equipment provided by the embodiment of the utility model is the same as that of the silicon wafer cutting device described in the above technical solution, and will not be repeated here.

In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

The above is only a specific embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any skilled person familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present utility model, and all should be covered within the protection scope of the present utility model. Therefore, the protection scope of the present utility model should be based on the protection scope of the claims.

Claims

A silicon wafer cutting device is characterized in that it comprises:

a cutting assembly, the cutting assembly includes a wire mesh and at least two main rollers, and every two main rollers are arranged at intervals; along the axial direction of the main roller, the wire mesh is wound on the roller surface of the main roller; along the direction of cutting silicon rods, the wire mesh is located below the silicon rods for cutting the silicon rods;

Wherein, the plane of the wire mesh between the two main rollers is perpendicular to the direction of cutting the silicon rod, and part of the wire mesh is in contact with the silicon rod for cutting the silicon rod, and the part of the wire mesh constitutes a working wire mesh;

The spray assembly is located below the working wire net and is used for spraying the working wire net.
The silicon wafer cutting device according to claim 1, wherein the spray assembly comprises:

A spray pipe, used for spraying the working wire net; the length extension direction of the spray pipe is parallel to the axial direction of the main roller;

A delivery pipeline, the delivery pipeline communicates with the spray pipeline, and is used for delivering cutting fluid to the spray pipeline.
The silicon wafer cutting device according to claim 2, wherein the radial section of the spray pipe is triangular in shape, and a corner of the spray pipe close to the silicon rod has a chamfered edge;

There is a first angle A between the chamfer and the plane where the wire mesh is located, 0°≤A≤180°;

A connecting hole is opened on the spraying pipeline, and the conveying pipeline communicates with the spraying pipeline through the connecting hole;

Spray holes are opened on the chamfer and/or spray slots are provided on the chamfer, and the spray holes and/or the spray slots are used to spray the cutting fluid to the working wire web.
The silicon wafer cutting device according to claim 3, characterized in that there is a second included angle B between the central axis of the spray hole and/or the spray slit and the plane where the wire mesh is located, 0°<B<90°.
The silicon wafer cutting device according to claim 3 or 4, wherein a spray hole is opened on the chamfer, and when the cross section of the spray hole is circular, the inner diameter of the circular spray hole is 1 mm to 2 mm; and/or,

When there is a spray slit on the chamfered edge, the width of the spray slit is 1mm-2mm.
The silicon wafer cutting device according to claim 2, wherein the conveying pipeline comprises:

a guide tube, the guide tube communicates with a liquid supply source, and the liquid supply source is used to provide the cutting fluid;

A drainage tube, one end of the drainage tube communicates with the diversion tube, and the other end of the drainage tube communicates with the spray pipe.
The silicon wafer cutting device according to claim 6, wherein the spraying pipeline comprises a liquid distribution pipe and a plurality of spraying pieces;

The liquid distribution tube communicates with the drainage tube;

Along the extending direction of the length of the liquid distribution pipe, a plurality of the spray members are distributed on the liquid distribution pipe at intervals for spraying the working wire net.
The silicon wafer cutting device according to claim 1, characterized in that, the silicon wafer cutting device further comprises a scrap box, the scrap box is located below the working wire net and the silicon rod, and is used to collect impurities generated after cutting the silicon rod;

The spray assembly and the debris box are detachably connected; and/or, the spray assembly and the debris box are integrally formed.
The silicon wafer cutting device according to claim 2, wherein the silicon wafer cutting device comprises two spray assemblies, and each of the spray assemblies includes a spray pipeline and a delivery pipeline;

The two spraying pipes are arranged opposite to each other, and each of the delivery pipes communicates with each of the spraying pipes in one-to-one correspondence.
A silicon wafer cutting device, characterized by comprising the silicon wafer cutting device according to any one of claims 1 to 9.