WO2023134474A1 - 封装天线基板及其制备方法、电子设备 - Google Patents

封装天线基板及其制备方法、电子设备 Download PDF

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Publication number
WO2023134474A1
WO2023134474A1 PCT/CN2022/143950 CN2022143950W WO2023134474A1 WO 2023134474 A1 WO2023134474 A1 WO 2023134474A1 CN 2022143950 W CN2022143950 W CN 2022143950W WO 2023134474 A1 WO2023134474 A1 WO 2023134474A1
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Prior art keywords
layer
material layer
dielectric
antenna substrate
dielectric layer
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PCT/CN2022/143950
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English (en)
French (fr)
Inventor
黄明利
王瑞涛
杨永星
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华为技术有限公司
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Publication of WO2023134474A1 publication Critical patent/WO2023134474A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/036—Multilayers with layers of different types
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Definitions

  • the present application relates to the field of communication technology, and in particular to a packaged antenna substrate, a preparation method thereof, and electronic equipment.
  • the antenna element and the RF chip are integrated on two opposite sides of the Printed Circuit Board (PCB).
  • the feed network for feeding the antenna element is arranged inside the circuit board, which can transmit signals between the antenna element and the radio frequency chip.
  • the loss of the transmission line between the antenna element and the radio frequency chip is high, which needs continuous improvement and reduction.
  • Embodiments of the present application provide a packaged antenna substrate, a preparation method thereof, and an electronic device, which can reduce the loss of a transmission line between an antenna element and a radio frequency chip.
  • the present application provides a packaged antenna substrate, the packaged antenna substrate includes a functional stack and a first dielectric layer and a feed network layer stacked on the functional stack, the first dielectric layer includes A first material layer and a second material layer, the first material layer is closer to the functional laminate relative to the second material layer, the material used for the first material layer and the material used for the second material layer The materials are different, and the second material layer includes a heat-oxidative aging-resistant material.
  • the first dielectric layer can be set between the package stack and the feed network layer, or the first dielectric layer can be set on the side of the feed network layer away from the package stack, and it only needs to meet the requirements of the feed network layer. layer contact.
  • the second material layer can be any material with high thermal and oxygen aging resistance, such as thermoplastic fluororesin with high temperature aging resistance.
  • the packaged antenna substrate uses the millimeter wave frequency band for communication. It can be understood that the higher the operating frequency of the electromagnetic wave, the shorter the corresponding operating wavelength. When the working wavelength of electromagnetic waves is on the order of millimeters, such a frequency band is called the millimeter wave frequency band.
  • the advantage of using the millimeter wave frequency band for communication is that the millimeter wave frequency band has very wide spectrum resources, which can realize the ultra-high data transmission rate of the 5G system.
  • there are many millimeter-wave frequency bands planned such as the n257 (26.5GHz-29.5GHz) frequency band dominated by 28GHz, or the n260 (37.0GHz-40.0GHz) frequency band dominated by 39GHz.
  • the millimeter wave signal transmission is very large.
  • the radio frequency chip and the antenna element can be integrated on the packaged antenna substrate to obtain the lowest link loss.
  • the high loss of the transmission line between the radio frequency chip and the antenna element it will have a negative impact on the reliability of the packaged antenna substrate.
  • One of the main factors affecting the internal transmission line loss of the packaged antenna substrate is the dielectric loss in the packaged antenna substrate.
  • the first dielectric layer can be formed by mixing two different media.
  • the first material layer is closer to the functional stack than the second material layer. That is, in the antenna package substrate, the first material layer is the inner layer structure in the dielectric layer, and the second material layer is the outer layer structure in the dielectric layer.
  • the first material layer has good bonding performance, and can have a better bonding force with other structural layers (such as functional laminates), so as to improve the overall bonding performance of the first dielectric layer.
  • the second material layer has good heat-oxidative aging resistance (also called heat-oxidative aging resistance), which is beneficial to improve the high-temperature oxidation resistance of the packaged antenna substrate as a whole, and has good reliability.
  • the first medium layer is prepared and formed by using a composite medium.
  • it can minimize the sharp deterioration of the loss of the first dielectric layer after high-temperature aging, effectively enhance the high-temperature oxidation resistance of the first dielectric layer, and thereby reduce the transmission line loss caused by the deterioration of the dielectric loss of the first dielectric layer after aging
  • a higher problem is beneficial to reduce the overall transmission loss of the packaged antenna substrate, so that the packaged antenna substrate has good transmission reliability and stability.
  • the overall equivalent isotropically radiated power (EIRP) of the packaged antenna substrate can be effectively improved, so that the working reliability of the packaged antenna substrate can be improved.
  • EIRP isotropically radiated power
  • the packaged antenna substrate further includes a second dielectric layer, and the functional laminated layer, the first dielectric layer, the feed network layer, and the second dielectric layer are sequentially stacked,
  • the second dielectric layer includes a third material layer and a fourth material layer, the fourth material layer is closer to the feed network layer relative to the third material layer, and the materials used in the third material layer and The materials used for the fourth material layer are different, and the fourth material layer includes a heat-oxidative aging-resistant material.
  • the fourth material layer may be any material with high resistance to thermal and oxidative aging, such as thermoplastic fluororesin with high temperature aging resistance.
  • the material of the first material layer includes polyphenylene ether or hydrocarbon resin.
  • the material of the first material layer may be a low-loss thermosetting resin (semi-cured material).
  • the material of the first material layer may be a thermosetting resin with a glass fiber type of 1080, 1078, 1086, 106, 1037, 1027, 1067 or the like.
  • the first material layer has an adhesive effect due to the use of polyphenylene ether or hydrocarbon resin, which can have a good bonding force with the functional laminate and/or the feed network layer, so that the first material layer can The dielectric layer is firmly bonded to the functional stack and/or the second dielectric layer is firmly bonded to the feed network layer.
  • the material of the second material layer includes a substrate or a fluororesin film.
  • the material of the second material layer may be a material with low loss and high temperature aging resistance.
  • the substrate can be prepared from a substrate material, which has good heat and oxygen aging resistance.
  • the substrate can be prepared from a material obtained by stripping the surface copper layer in a copper clad laminate (Copper Clad Laminate, CCL), or the substrate can be prepared by using a flexible copper clad laminate (Flexible Copper Clad Laminate, FCCL) after stripping the surface copper layer.
  • CCL Copper Clad Laminate
  • FCCL Flexible Copper Clad Laminate
  • the material of the second material layer may include fluororesin, such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer (Fluorinated ethylene propylene, FEP) etc. and their mixtures can also include thermosetting resins resistant to high temperature oxidation.
  • fluororesin such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer (Fluorinated ethylene propylene, FEP) etc. and their mixtures can also include thermosetting resins resistant to high temperature oxidation.
  • fluororesin such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polyte
  • the second material layer has good high temperature aging resistance due to the use of the substrate or the fluororesin film, and can also have a high bonding force with the copper foil, so that it can be matched with a lower roughness copper foil.
  • the first dielectric layer can effectively reduce the transmission loss of the packaged antenna substrate due to the use of a mixed-voltage composite medium, so that the packaged antenna substrate has good working reliability.
  • the dielectric loss of the first dielectric layer is less than 0.004.
  • the first dielectric layer whose dielectric loss satisfies this range can have a lower dielectric loss, which can make the integrity of the signal in the first dielectric layer better, and is beneficial to improve the transmission loss of the packaged antenna substrate.
  • the dielectric constant of the first dielectric layer is less than 4.0.
  • the first dielectric layer whose dielectric loss satisfies this range can have a lower dielectric constant, which can effectively improve the quality of high-speed transmission signals, increase the signal rate, and help improve the transmission loss of the packaged antenna substrate.
  • the surface roughness of the feed network layer is less than 2 microns.
  • the surface roughness refers to the unevenness of the small spacing and the small peaks and valleys of the processed surface.
  • the distance (wave distance) between the two peaks or two troughs is very small, which belongs to the microscopic geometric shape error.
  • the feed network layer whose surface roughness meets this range can have a lower copper foil roughness, which can effectively improve the conductor loss in the millimeter wave frequency band, and the loss is more obvious in the band with high operating frequency. It is beneficial to reduce the overall transmission line loss of the packaged antenna substrate.
  • the peel strength between the feed network layer and the first dielectric layer is greater than 3 pounds per inch.
  • the first dielectric layer whose peel strength satisfies this range can have a strong peel strength with the feed network layer, which is conducive to improving the conductor loss in the millimeter wave frequency band, thereby reducing the overall transmission line of the packaged antenna substrate. loss.
  • the present application also provides a method for preparing a packaged antenna substrate, the method comprising:
  • the first dielectric layer includes a first material layer and a second material layer, and the first material layer is opposite to the second
  • the material layer is close to the functional laminate, the material used in the first material layer is different from the material used in the second material layer, and the second material layer includes a material resistant to heat and oxygen aging.
  • the preparation prepares the first dielectric layer and the feed network layer that are stacked on the functional stack, the first dielectric layer includes a first material layer and a second material layer, so The first material layer is closer to the functional stack relative to the second material layer, the material used in the first material layer is different from the material used in the second material layer, and the second material layer Including thermal oxygen aging resistance materials include:
  • the copper-clad core layer comprising a second material layer and copper layers disposed on opposite sides of the second material layer;
  • the first material layer is closer to the functional stack relative to the second material layer, the material used in the first material layer is different from the material used in the second material layer, and the The second material layer includes a material resistant to heat and oxygen aging.
  • the present application further provides an electronic device, the electronic device includes a main board and the packaged antenna substrate as described above, or, the electronic device includes a main board and the packaged antenna substrate prepared by the above-mentioned preparation method; The packaged antenna substrate is connected to the main board.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural view of a packaged antenna substrate provided in an embodiment of the present application.
  • Fig. 3 is another schematic structural view of the packaged antenna substrate provided by the embodiment of the present application.
  • Fig. 4 is another schematic structural view of the packaged antenna substrate provided by the embodiment of the present application.
  • FIG. 5 is a schematic flowchart of a method for preparing a packaged antenna substrate provided in an embodiment of the present application
  • FIG. 6 is a schematic diagram of some steps of a method for preparing an antenna package substrate provided in an embodiment of the present application.
  • Plurality refers to two or more than two.
  • connection It should be understood in a broad sense.
  • the connection between A and B can be directly connected between A and B, or indirectly connected through an intermediary.
  • millimeter-wave communication has gradually become the focus, and the design and application requirements of millimeter-wave antennas are also increasing. more and more exuberant. Since the length of the transmission path in the millimeter wave frequency band has a great influence on the signal amplitude loss, and the processing accuracy of the millimeter wave antenna is very high, the AiP (Antenna in Package) technology with extremely short antenna feeder path and high processing accuracy and Antenna-on-Board (AOB) technology has become a mainstream technology in the field of millimeter wave antennas.
  • AiP Antenna in Package
  • AOB Antenna-on-Board
  • AiP Antenna in Package, antenna package integration
  • AOB antenna-on-board
  • the antenna element and the radio frequency chip are integrated on two opposite sides of the printed circuit board (PCB).
  • the surface of the circuit board, and the feeding network for feeding the antenna element is arranged inside the circuit board, which can transmit signals between the antenna element and the radio frequency chip.
  • the loss of the transmission line between the antenna element and the radio frequency chip is high, which needs continuous improvement and reduction.
  • Embodiments of the present application provide a packaged antenna substrate 100 and an electronic device 200 using the packaged antenna substrate 100 , which can reduce the loss of the transmission line between the antenna element and the radio frequency chip.
  • the electronic device 200 can be, but not limited to, smart consumer electronic devices 200 such as mobile phones, tablet computers, notebook computers, smart bracelets, smart watches, etc., or can be telecom equipment room equipment such as metropolitan area routers and central routers. It can also be IT computer room equipment such as data center servers and data center switches, or it can be vehicle-mounted equipment such as MDC (Mobile Data Center, mobile data center), which can also be applied to industrial robots, rail transit (such as subway , high-speed rail) or special power sources (such as ships, aircraft, vehicles), etc.
  • MDC Mobile Data Center, mobile data center
  • the packaged antenna substrate 100 is not limited to be applied to the devices listed above, and it can also be applied to any device that requires the antenna to achieve signal reception and transmission, such as a passive antenna array, active radio frequency transceiver or radiation or can be applied to optical modules; or can be applied to base stations, such as remote radio units (Remote Radio Unit, RRU), active antenna units (Active Antenna Unit, AAU), indoor base station processing units (Building Base band Unite, BBU), remote radio frequency hub (Remote Radio Unit-Hub, RHUB); or can be applied to radar, etc., the embodiments of the present application are not strictly limited to this.
  • an electronic device 200 may include a main board 210 and an antenna package substrate 100 connected to the main board 210 .
  • the main board 210 can carry the antenna package substrate 100 and be assembled with the antenna package substrate 100 , so as to realize electrical interconnection with the antenna package substrate 100 .
  • the packaged antenna substrate 100 may be a packaged substrate in the form of a Ball Grid Array (BGA), and may be electrically connected to the main board 210 through solder balls disposed on the packaged antenna substrate 100 .
  • BGA Ball Grid Array
  • FIG. 1 is only to schematically describe the connection relationship between the main board 210 and the packaged antenna substrate 100 , and is not intended to specifically limit the connection positions, specific structures and quantities of each device.
  • the structure shown in the embodiment of the present application does not constitute a specific limitation on the electronic device 200 .
  • the electronic device 200 may include more or fewer components than shown in the figure, or combine certain components, or separate certain components, or arrange different components.
  • the illustrated components can be realized in hardware, software or a combination of software and hardware.
  • the antenna package substrate 100 includes a functional stack 10 , a first build-up layer 20 , a second build-up layer 30 and a radio frequency chip 40 (RFIC, Radio Frequency Integrated Circuit).
  • RFIC Radio Frequency Integrated Circuit
  • the packaged antenna substrate 100 uses the millimeter wave frequency band for communication.
  • the millimeter wave frequency band When the working wavelength of electromagnetic waves is on the order of millimeters, such a frequency band is called the millimeter wave frequency band.
  • the advantage of using the millimeter wave frequency band for communication is that the millimeter wave frequency band has very wide spectrum resources, which can realize the ultra-high data transmission rate of the 5G system.
  • the functional stack 10 includes a multilayer wiring layer 11 , a multilayer first insulating layer 12 and a multilayer second insulating layer 13 .
  • the multi-layer circuit layer 11, the multi-layer first insulating layer 12 and the multi-layer second insulating layer 13 are according to the structure of one layer of circuit layer 11, one layer of first insulating layer 12, one layer of circuit layer 11, and one layer of second insulating layer 13. Continuously and alternately stacked in order to form a layout arrangement of "circuit layer 11-first insulating layer 12-circuit layer 11-second insulating layer 13-circuit layer 11 . . . -circuit layer 11".
  • every two adjacent wiring layers 11 can be separated by a first insulating layer 12 or a second insulating layer 13 .
  • the first insulating layer 12 and the second insulating layer 13 can be made of high-frequency dielectric materials to meet the high-frequency transmission requirements of the packaged antenna substrate 100 .
  • the materials used for the first insulating layer 12 and the second insulating layer 13 are different.
  • the material of the wiring layer 11 may be copper, such as very low profile copper foil (HVLP).
  • the material of the first insulating layer 12 can be prepared by peeling off the surface copper layer in copper clad laminate (CCL), and the material of the second insulating layer 13 can be thermosetting resin.
  • the circuit layer 11 has a conductive function, and by arranging the first insulating layer 12 or the second insulating layer 13 between two adjacent circuit layers 11, the two adjacent circuit layers 11 can be effectively separated, so that The two adjacent circuit layers 11 can perform their respective functions independently of each other without interfering with each other, so the reliability is good.
  • each circuit layer 11 can be etched into a corresponding circuit pattern according to requirements, so as to have corresponding functions.
  • the wiring layer 11 can be used as a gap coupling layer.
  • the line layer 11 can be used as a ground plane for isolation or ground protection.
  • the circuit layer 11 can be used as a power layer to supply power to the radio frequency chip 40 .
  • the line layer 11 can be used as a control layer to control control signals such as clock signal (CLK), chip select (CSB) and the like.
  • the line layer 11 can be used as a strip line layer to realize the function of feeding power to the antenna radiating element.
  • the wiring layer 11 can be used as an antenna transit layer.
  • the respective functions and specific arrangement positions of the multi-layer circuit layers 11 can be selected and arranged according to the application scenarios, which are not strictly limited in the embodiments of the present application.
  • the functional stack 10 may further include an interlayer interconnection structure 50 .
  • the interlayer interconnection structure 50 can be arranged at a preset position of the functional stack 10 as required, and can connect the circuit layers 11 that need to be interconnected among the multi-layer circuit layers 11 .
  • metal regions can be provided at the position where the interlayer interconnection structure 50 is surrounded by the circuit layer 11 that needs to be interconnected in the multilayer circuit layer 11, and surrounded by the circuit layer 11 that does not need to be interconnected in the multilayer circuit layer 11.
  • An insulating region is set at the position of the interlayer interconnection structure 50, so that the circuit layer 11 to be interconnected in the multilayer circuit layer 11 can form a metal connection strip with the interlayer interconnection structure 50, and the multilayer circuit layer 11
  • the circuit layer 11 that does not need to be interconnected can form an insulating isolation zone with the interlayer interconnection structure 50, so as to ensure that the circuit layer 11 that needs to be interconnected and the circuit layer 11 that does not need to be interconnected in the multilayer circuit layer 11 are independent from each other. Without interference, the interconnection requirement of the interlayer interconnection structure 50 is further achieved.
  • the interlayer interconnection structure 50 may be a metallized via hole penetrating through all the circuit layers 11 in the functional stack 10, wherein the metallized via hole can be understood as an electrical connection structure formed by filling the via hole with electroplated metal .
  • interlayer interconnection structures 50 can be adjusted to one or more according to the preparation requirements of the packaged antenna substrate 100 .
  • Each interlayer interconnection structure 50 requires an independent metallization via. For example, if there are N interlayer interconnection structures 50 , N metallization vias are required, and N is a positive integer.
  • different interlayer interconnection structures 50 may exist in the same circuit layer 11, for example, there are two interlayer interconnection structures 50 in the same circuit layer 11, wherein one interlayer interconnection structure 50 can realize two adjacent circuit layers. 11, another interlayer interconnection structure 50 can realize the interconnection between three adjacent circuit layers 11.
  • the interlayer interconnection structure 50 can be used to realize the interconnection between multiple adjacent circuit layers 11 , and the interlayer interconnection structure 50 can also be used to realize the interconnection between multiple non-adjacent circuit layers 11 .
  • the number, location, and specific interconnection requirements of the interlayer interconnection structures 50 can be selected according to the actual application requirements of the packaged antenna substrate 100 , which is not strictly limited in the embodiments of the present application.
  • the first build-up layer 20 and the second build-up layer 30 are respectively disposed on both sides of the functional stack 10 . That is to say, the functional laminate 10 is a double-sided laminate, and the two sides opposite to each other can be provided with additional layers. In other words, the first build-up layer 20 and the second build-up layer 30 are disposed on opposite sides of the functional stack 10 . It should be noted that the number of layers of the first build-up layer 20 and the number of layers of the second build-up layer 30 can be the same or different, and can be set according to the actual application requirements of the functional stack 10 .
  • the first build-up layer 20 and the second build-up layer 30 are symmetrically distributed on both sides of the functional laminate 10, which can effectively avoid lamination processing When warping defects occur, product quality is guaranteed.
  • the number of layers of the first build-up layer 20 is two layers
  • the number of layers of the second build-up layer 30 is also two layers.
  • the first build-up layer 20 and the second build-up layer 30 are asymmetrically distributed on both sides of the functional stack 10 .
  • the first build-up layer 20 has three layers
  • the second build-up layer 30 has five layers.
  • the following is an example of setting up layers on both sides of the functional laminate 10 as an example, but it can only be provided on any one of the two opposite sides of the functional laminate 10. Laminated on one side.
  • the functional laminate 10 is single-sided or double-sided laminated, and it can be flexibly set according to the actual application requirements of the functional laminate 10 .
  • the first build-up layer 20 may include a first dielectric layer 21 , a feed network layer 22 , a second dielectric layer 23 and a device layer 24 sequentially disposed on the functional stack 10 .
  • both the first dielectric layer 21 and the second dielectric layer 23 can be made of high-frequency dielectric materials to meet the high-frequency transmission requirements of the packaged antenna substrate 100 .
  • the feed network layer 22 and the device layer 24 can be made of copper foil, such as very low profile copper foil (HVLP).
  • the surface roughness of the feed network layer 22 may be less than 2 microns, and the surface roughness refers to the small pitch and the unevenness of small peaks and valleys on the processed surface.
  • the feed network layer 22 whose surface roughness satisfies this range can have a lower copper foil roughness, which can effectively improve the conductor loss in the millimeter-wave frequency band, and the loss is more obvious in the high-frequency band. , which is beneficial to reduce the overall transmission line loss of the packaged antenna substrate 100 .
  • the peel strength between the feed network layer 22 and the first dielectric layer 21 and/or the second dielectric layer 23 may be greater than 3 lbs/inch (eg, 4 lbs/inch).
  • the first dielectric layer 21 and/or the second dielectric layer 23 whose peel strength satisfies this range can have a strong peel strength with the feed network layer 22, which is beneficial to improve the conductor loss in the millimeter wave frequency band, thereby reducing the packaging cost.
  • the overall transmission line loss of the antenna substrate 100 is beneficial to improve the conductor loss in the millimeter wave frequency band, thereby reducing the packaging cost.
  • the packaged antenna substrate 100 is a multi-layer board structure, and by disposing the feed network layer 22 on the second outer layer of the packaged antenna substrate 100, the feed network layer 22 can be arranged inside the packaged antenna substrate 100, thereby The feeding network layer 22 can transmit microwave signals (for example, above 28 Hz) between the antenna radiating unit and the radio frequency chip 40 , effectively ensuring the stable transmission of internal signals of the packaged antenna substrate 100 .
  • microwave signals for example, above 28 Hz
  • the first dielectric layer 21 includes a first material layer 211 and a second material layer 212, and the first material layer 211 is the same
  • the contact layer structure, the second material layer 212 is a layer structure in the first dielectric layer 21 that is in contact with the feed network layer 22 .
  • the material used for the first material layer 211 is different from the material used for the second material layer 212 .
  • the first material layer 211 is closer to the functional laminate 10 than the second material layer 212 , the first material layer 211 is a low-loss adhesive sheet, and the second material layer 212 is a material layer with high heat and oxygen aging resistance.
  • the first material layer 211 is closer to the functional stack 10 than the second material layer 212 . That is, in the packaged antenna substrate 100 , the first material layer 211 is an inner layer structure in the dielectric layer, and the second material layer 212 is an outer layer structure in the dielectric layer.
  • the two can cooperate to improve the high temperature oxidation resistance of the packaged antenna substrate as a whole Ability to make outstanding contributions, good reliability.
  • the material of the first material layer 211 may include polyphenylene ether or hydrocarbon resin.
  • the material of the second material layer 212 may include a substrate or a fluororesin film.
  • the substrate can be prepared from a substrate material, which has good heat and oxygen aging resistance.
  • the substrate can be prepared from a material obtained by stripping the surface copper layer in a copper clad laminate (Copper Clad Laminate, CCL), or the substrate can be prepared by using a flexible copper clad laminate (Flexible Copper Clad Laminate, FCCL) after stripping the surface copper layer.
  • CCL Copper Clad Laminate
  • FCCL Flexible Copper Clad Laminate
  • the millimeter wave signal transmission is very large, and by using the packaged antenna substrate 100, the radio frequency chip 40 and the antenna element can be integrated on the packaged antenna substrate 100 to obtain the lowest link loss.
  • the high loss of the transmission line of the feeding network inside the packaged antenna substrate 100 it will adversely affect the working reliability of the packaged antenna substrate 100 .
  • One of the main factors affecting the transmission line loss of the feed network inside the packaged antenna substrate 100 is the dielectric loss in the packaged antenna substrate 100 .
  • the first dielectric layer 21 can be formed by mixing two different media. Compared with the first dielectric layer 21 formed by pressing a single medium, the first dielectric layer 21 is prepared and formed using a composite medium. On the one hand, it can minimize the sharp deterioration of the loss of the first dielectric layer 21 after high-temperature aging, effectively enhance the high-temperature oxidation resistance of the first dielectric layer 21, and further reduce the loss of the first dielectric layer 21 due to the deterioration of the dielectric loss after aging.
  • the problem of high transmission line loss is beneficial to reduce the overall transmission loss of the packaged antenna substrate 100 , so that the packaged antenna substrate 100 has good transmission reliability and stability.
  • the overall equivalent isotropically radiated power (EIRP) of the packaged antenna substrate 100 can be effectively improved, so that the working reliability of the packaged antenna substrate 100 can be improved.
  • EIRP isotropically radiated power
  • the dielectric loss (Dissipation Factor, Df) of the first dielectric layer 21 may be less than 0.004.
  • both the dielectric loss of the first material layer 211 and the dielectric loss of the second material layer 212 are less than 0.004. Therefore, the first dielectric layer 21 whose dielectric loss satisfies this range can have a lower dielectric loss, which can make the integrity of the signal in the first dielectric layer 21 better, and is conducive to improving the transmission loss of the packaged antenna substrate 100 .
  • the dielectric constant (Dielectric Constant, Dk) of the first dielectric layer 21 is less than 4.0.
  • both the dielectric constant of the first material layer 211 and the dielectric constant of the second material layer 212 are less than 4.0. Therefore, the first dielectric layer 21 whose dielectric loss meets this range can have a lower dielectric constant, which can effectively improve the quality of high-speed transmission signals, increase the signal rate, and help improve the transmission loss of the packaged antenna substrate 100 .
  • the material of the first material layer 211 includes polyphenylene ether
  • the material of the second material layer 212 includes a substrate
  • the substrate may be prepared from a copper clad laminate after stripping the surface copper layer.
  • the first material layer 211 has an adhesive effect due to the use of polyphenylene ether, and it can have a good bonding force with the functional laminate 10, so that the first dielectric layer 21 can be firmly bonded to the functional laminate. on stack 10.
  • the second material layer 212 has good high temperature aging resistance due to the use of the substrate, and can also have a higher bonding force with the copper foil, so that it can be matched with a lower roughness copper foil.
  • the first dielectric layer 21 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the first material layer 211 may use Megtron 7N grade material.
  • the material of the second material layer 212 may include fluororesin, such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer (Fluorinated ethylene propylene, FEP), etc. and their mixtures may also include thermosetting resins resistant to high temperature oxidation.
  • PTFE polytetrafluoroethylene
  • PFA soluble polytetrafluoroethylene
  • FEP fluorinated ethylene propylene copolymer
  • the material of the first material layer 211 includes hydrocarbon resin
  • the material of the second material layer 212 includes a substrate
  • the substrate may be prepared by peeling off the surface copper layer of a flexible copper clad laminate.
  • the first material layer 211 has an adhesive function due to the use of hydrocarbon resin, and it can have a good bonding force with the functional laminate 10, so that the first dielectric layer 21 can be firmly bonded to the functional laminate. on stack 10.
  • the second material layer 212 has good high temperature aging resistance due to the use of the substrate, and can also have a higher bonding force with the copper foil, so that it can be matched with a lower roughness copper foil. Therefore, the first dielectric layer 21 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the second dielectric layer 23 includes a third material layer 231 and a fourth material layer 232
  • the third material layer 231 is the second dielectric layer 23 and the feed network layer 22
  • the fourth material layer 232 is a layer structure in the second dielectric layer 23 that is in contact with the device layer 24 .
  • the material used for the third material layer 231 is different from the material used for the fourth material layer 232 .
  • the third material layer 231 is closer to the functional laminate 10 than the fourth material layer 232 , the third material layer 231 is a low-loss adhesive sheet, and the fourth material layer 232 is a material layer with high heat and oxygen aging resistance.
  • the third material layer 231 is closer to the functional stack 10 than the fourth material layer 232 . That is, in the packaged antenna substrate 100 , the third material layer 231 is an inner layer structure in the dielectric layer, and the fourth material layer 232 is an outer layer structure in the dielectric layer.
  • the two can cooperate to improve the high temperature oxidation resistance of the packaged antenna substrate as a whole Ability to make outstanding contributions, good reliability.
  • the material of the third material layer 231 may include polyphenylene ether or hydrocarbon resin.
  • the material of the fourth material layer 232 may include a substrate or a fluororesin film.
  • the substrate can be prepared from a substrate material, which has good heat and oxygen aging resistance.
  • the substrate can be prepared from a material obtained by stripping the surface copper layer in a copper clad laminate (Copper Clad Laminate, CCL), or the substrate can be prepared by using a flexible copper clad laminate (Flexible Copper Clad Laminate, FCCL) after stripping the surface copper layer.
  • CCL Copper Clad Laminate
  • FCCL Flexible Copper Clad Laminate
  • the millimeter wave signal transmission is very large, and by using the packaged antenna substrate 100, the radio frequency chip 40 and the antenna element can be integrated on the packaged antenna substrate 100 to obtain the lowest link loss.
  • the high loss of the transmission line of the feeding network inside the packaged antenna substrate 100 it will adversely affect the working reliability of the packaged antenna substrate 100 .
  • One of the main factors affecting the transmission line loss of the feed network inside the packaged antenna substrate 100 is the dielectric loss in the packaged antenna substrate 100 .
  • the second dielectric layer 23 can be formed by mixing two different media.
  • the second dielectric layer 23 is prepared and formed by using a composite medium. On the one hand, it can minimize the sharp deterioration of the loss of the second dielectric layer 23 after high-temperature aging, effectively enhance the high-temperature oxidation resistance of the second dielectric layer 23, and then reduce the deterioration of the second dielectric layer 23 due to the deterioration of the dielectric loss after aging.
  • the problem of high transmission line loss is beneficial to reduce the overall transmission loss of the packaged antenna substrate 100 , so that the packaged antenna substrate 100 has good transmission reliability and stability.
  • the overall equivalent isotropically radiated power (EIRP) of the packaged antenna substrate 100 can be effectively improved, so that the working reliability of the packaged antenna substrate 100 can be improved.
  • the dielectric loss (Dissipation Factor, Df) of the second dielectric layer 23 may be less than 0.004.
  • both the dielectric loss of the third material layer 231 and the dielectric loss of the fourth material layer 232 are less than 0.004. Therefore, the second dielectric layer 23 whose dielectric loss satisfies this range can have a lower dielectric loss, which can make the integrity of the signal in the second dielectric layer 23 better, and is conducive to improving the transmission loss of the packaged antenna substrate 100 .
  • the dielectric constant (Dielectric Constant, Dk) of the second dielectric layer 23 is less than 4.0.
  • both the dielectric constant of the third material layer 231 and the dielectric constant of the fourth material layer 232 are less than 4.0. Therefore, the second dielectric layer 23 whose dielectric loss satisfies this range can have a lower dielectric constant, which can effectively improve the quality of high-speed transmission signals, increase the signal rate, and help improve the transmission loss of the packaged antenna substrate 100 .
  • the material of the third material layer 231 includes polyphenylene ether
  • the material of the fourth material layer 232 includes a substrate
  • the substrate can be prepared from a material obtained by peeling off the surface copper layer in a copper clad laminate.
  • the third material layer 231 has an adhesive effect due to the use of polyphenylene ether, and it can have a good bonding force with the feed network layer 22, so that the second dielectric layer 23 can be firmly bonded to the Feed network layer 22.
  • the fourth material layer 232 has good high-temperature aging resistance due to the use of the substrate, and can work in a high-temperature environment for a long time, and the deterioration of loss after aging is small.
  • the second dielectric layer 23 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the third material layer 231 may use Megtron 7N grade material.
  • the material of the fourth material layer 232 may include fluororesin, such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer (Fluorinated ethylene propylene, FEP), etc. and their mixtures may also include thermosetting resins resistant to high temperature oxidation.
  • PTFE polytetrafluoroethylene
  • PFA soluble polytetrafluoroethylene
  • FEP fluorinated ethylene propylene copolymer
  • the material of the third material layer 231 includes a hydrocarbon resin
  • the material of the fourth material layer 232 includes a substrate
  • the substrate can be prepared by peeling off the surface copper layer of a flexible copper clad laminate.
  • the third material layer 231 has an adhesive function due to the use of hydrocarbon resin, and it can have a good bonding force with the feed network layer 22, so that the second dielectric layer 23 can be firmly bonded to the Feed network layer 22.
  • the fourth material layer 232 has good high-temperature aging resistance due to the use of the substrate, and can work in a high-temperature environment for a long time, and the deterioration of loss after aging is small. It can also be used with lower roughness copper foil. Therefore, the first dielectric layer 21 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the first dielectric layer 21 includes a first material layer 211 and a second material layer 212 .
  • the first material layer 211 is the layer structure in the first dielectric layer 21 that is in contact with the functional stack 10
  • the second material layer 212 is the layer structure in the first dielectric layer 21 that is in contact with the feed network layer 22. contact layer structure.
  • the second dielectric layer 23 includes a third material layer 231 and a fourth material layer 232 .
  • the third material layer 231 is a layer structure in the second dielectric layer 23 that is in contact with the feed network layer 22, and the fourth material layer 232 is in the second dielectric layer 23 that is in contact with the device layer 24. layer structure.
  • the material used for the third material layer 231 is different from the material used for the fourth material layer 232 .
  • the first material layer 211 is closer to the functional stack 10 than the second material layer 212
  • the third material layer 231 is closer to the functional stack 10 than the fourth material layer 232 .
  • the first material layer 211 and the third material layer 231 are low loss adhesive sheets
  • the second material layer 212 and the fourth material layer 232 are high heat and oxygen aging resistance material layers.
  • the first material layer 211 is closer to the functional stack 10 than the second material layer 212
  • the third material layer 231 is closer to the functional stack 10 than the fourth material layer 232 . That is, in the antenna package substrate 100, the first material layer 211 and the third material layer 231 are the inner layer structure in the dielectric layer, and the second material layer 212 and the fourth material layer 232 are the outer layer structure in the dielectric layer .
  • the two can cooperate to improve the high temperature oxidation resistance of the packaged antenna substrate as a whole Ability to make outstanding contributions, good reliability.
  • the material of the first material layer 211 and the third material layer 231 may include polyphenylene ether or hydrocarbon resin.
  • the material of the second material layer 212 and the fourth material layer 232 may include a substrate or a fluororesin film.
  • the substrate can be prepared from a substrate material, which has good heat and oxygen aging resistance.
  • the substrate can be prepared from a material obtained by peeling off the surface copper layer in a copper clad laminate (Copper Clad Laminate, CCL), or the substrate can be prepared by using a material obtained by peeling off the surface copper layer in a flexible copper clad laminate (Flexible Copper Clad Laminate, FCCL).
  • CCL Copper Clad Laminate
  • FCCL Flexible Copper Clad Laminate
  • the millimeter wave signal transmission is very large, and by using the packaged antenna substrate 100, the radio frequency chip 40 and the antenna element can be integrated on the packaged antenna substrate 100 to obtain the lowest link loss.
  • the high loss of the transmission line of the feeding network inside the packaged antenna substrate 100 it will adversely affect the working reliability of the packaged antenna substrate 100 .
  • One of the main factors affecting the transmission line loss of the feed network inside the packaged antenna substrate 100 is the dielectric loss in the packaged antenna substrate 100 .
  • the first dielectric layer 21 and the second dielectric layer 23 adjacent to the feed network layer 22 have two material layers with different materials
  • the first dielectric layer 21 and the second dielectric layer 23 can be passed through two layers. It is formed by mixed pressure of different media.
  • the first dielectric layer 21 and the second dielectric layer 23 are formed by using a composite medium.
  • the second dielectric layer 23 has a high transmission line loss due to deterioration of the dielectric loss after aging, which is beneficial to reduce the overall transmission loss of the packaged antenna substrate 100, so that the packaged antenna substrate 100 has good transmission reliability and stability.
  • the overall equivalent isotropically radiated power (EIRP) of the packaged antenna substrate 100 can be effectively improved, so that the working reliability of the packaged antenna substrate 100 can be improved.
  • the dielectric loss (Dissipation Factor, Df) of the first dielectric layer 21 and the second dielectric layer and the dielectric loss of the second dielectric layer 23 can be less than 0.004 .
  • both the dielectric loss of the first material layer 211 of the first dielectric layer 21 and the dielectric loss of the second material layer 212 are less than 0.004, and the dielectric loss of the third material layer 231 and the fourth material layer 231 of the second dielectric layer 23
  • the dielectric loss of the material layer 232 can be less than 0.004.
  • the first dielectric layer 21 and the second dielectric layer 23 whose dielectric loss satisfies this range can have lower dielectric loss, and can make the integrity of the signal in the first dielectric layer 21 and the second dielectric layer 23 relatively high.
  • the dielectric constant (Dielectric Constant, Dk) of the first dielectric layer 21 and the dielectric constant of the second dielectric layer 23 are less than 4.0.
  • the dielectric constant of the first material layer 211 of the first dielectric layer 21 and the dielectric constant of the second material layer 212 can be less than 4.0
  • the dielectric constant of the third material layer 231 and the fourth material layer of the second dielectric layer 23 The dielectric constant of the material layer 232 can be less than 4.0.
  • the first dielectric layer 21 and the second dielectric layer 23 whose dielectric loss satisfies this range can have a lower dielectric constant, which can effectively improve the quality of high-speed transmission signals, increase the signal rate, and help improve the packaging antenna substrate 100. transmission loss.
  • the material of the first material layer 211 and the third material layer 231 includes polyphenylene ether
  • the material of the second material layer 212 and the fourth material layer 232 includes a substrate
  • the substrate can be a peeled surface of a copper clad laminate.
  • the material after the copper layer is prepared.
  • the first material layer 211 and the third material layer 231 have an adhesive effect due to the use of polyphenylene ether, which can have a good bonding force with the functional laminate 10 and the feed network layer 22, so it can The first dielectric layer 21 is firmly bonded to the functional stack 10 and the second dielectric layer 23 is firmly bonded to the feed network layer 22 .
  • the second material layer 212 and the fourth material layer 232 have good high-temperature aging resistance due to the use of substrates, and can work in a high-temperature environment for a long time, and the deterioration of loss after aging is small. It can also have a high bonding force with copper foil, so that it can be matched with copper foil with lower roughness.
  • the first dielectric layer 21 and the second dielectric layer 23 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the first material layer 211 and the third material layer 231 may use Megtron 7N grade materials.
  • the material of the second material layer 212 and the fourth material layer 232 can include fluororesin, such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer Fluorinated ethylene propylene, FEP, etc. and their mixtures can also include thermosetting resins resistant to high temperature oxidation.
  • fluororesin such as polytetrafluoroethylene (PTFE, Poly Tetra Fluoro Ethylene), soluble polytetrafluoroethylene (Polytetrafluoroethylene, PFA), fluorinated ethylene propylene copolymer Fluorinated ethylene propylene, FEP, etc. and their mixtures can also include thermosetting resins resistant to high temperature oxidation.
  • the material of the first material layer 211 and the third material layer 231 includes hydrocarbon resin
  • the material of the second material layer 212 and the fourth material layer 232 includes a substrate
  • the substrate can be a flexible copper clad laminate. It is prepared from the material after peeling off the surface copper layer.
  • the first material layer 211 and the third material layer 231 have an adhesive effect due to the use of hydrocarbon resin, which can have a good bonding force with the functional laminate 10 and the feed network layer 22, so it can The first dielectric layer 21 is firmly bonded to the functional stack 10 and the second dielectric layer 23 is firmly bonded to the feed network layer 22 .
  • the second material layer 212 and the fourth material layer 232 have good high-temperature aging resistance due to the use of substrates, and can work in a high-temperature environment for a long time, and the deterioration of loss after aging is small. It can also have a high bonding force with copper foil, so that it can be matched with copper foil with lower roughness.
  • the first dielectric layer 21 and the second dielectric layer 23 can effectively reduce the transmission loss of the packaged antenna substrate 100 due to the use of a mixed-pressure composite medium, so that the packaged antenna substrate 100 has good working reliability.
  • the first dielectric layer 21 may have a first-level metallization via hole 60 , and the first-level metallization via hole 60 penetrates the first dielectric layer 21 .
  • the layer 10 is electrically connected to the feed network layer 22 through the first-level metallization via 60 .
  • the second dielectric layer 23 may have a second-level metallization via hole 70 , the second-level metallization via hole 70 penetrates the second dielectric layer 23 , and the feed network layer 22 and the device layer 24 are electrically connected through the second-level metallization via hole 70 .
  • interlayer interconnection can be realized through the first-level metallization vias 60 and second-level metallization vias 70 with fine lines and fine pitches, so that more electronic components can be mounted or more layouts can be made per unit area.
  • the circuit can greatly enhance the signal conduction performance inside the packaged antenna substrate 100 .
  • first-level metallization vias 60 and second-level metallization vias 70 can be one or more as required.
  • the hole positions of the first-level metallized via holes 60 and the second-level metallized via holes 70 can be staggered from each other, or they can be overlapped together in the vertical direction.
  • the embodiments of the present application do not impose strict limitations on the shape, quantity, position, etc. of the first-level metallization via holes 60 and the second-level metallization via holes 70 .
  • the first build-up layer 20 is an example of a second-level build-up layer, but the first build-up layer 20 can actually be a third-level build-up layer or a third-level build-up layer.
  • each dielectric layer in the first build-up layer 20 can refer to the foregoing description to form a composite dielectric layer formed by mixing and pressing two kinds of media, and the embodiment of the present application does not do this Strict restrictions.
  • the second build-up layer 30 can be consistent with the number of layers of the first build-up layer 20 and is also a second-order build-up layer. 10 on the third dielectric layer 31 , the conductive layer 32 , the fourth dielectric layer 33 and the antenna radiation layer 34 .
  • both the third dielectric layer 31 and the fourth dielectric layer 33 can be made of high-frequency dielectric materials to meet the high-frequency transmission requirements of the packaged antenna substrate 100 .
  • Both the conductive layer 32 and the antenna radiation layer 34 can be made of copper foil, such as very low profile copper foil (HVLP).
  • the third dielectric layer 31 may have a first-level metallization via hole 60 , the first-level metallization via hole 60 penetrates the third dielectric layer 31 , and the functional stack 10 and the conductive layer 32 are electrically connected through the first-level metallization via hole 60 .
  • the fourth dielectric layer 33 may have a second-level metallization via hole 70 , the second-level metallization via hole 70 penetrates the fourth dielectric layer 33 , and the antenna radiation layer 34 is electrically connected to the conductive layer 32 through the second-level metallization via hole 70 .
  • interlayer interconnection can be realized through the first-level metallization vias 60 and second-level metallization vias 70 with fine lines and fine pitches, so that more electronic components can be mounted or more layouts can be made per unit area.
  • the circuit can greatly enhance the signal conduction performance inside the packaged antenna substrate 100 .
  • first-level metallization vias 60 and second-level metallization vias 70 can be one or more as required.
  • the hole positions of the first-level metallized via holes 60 and the second-level metallized via holes 70 can be staggered from each other, or they can be overlapped together in the vertical direction.
  • the embodiments of the present application do not impose strict limitations on the shape, quantity, position, etc. of the first-level metallization via holes 60 and the second-level metallization via holes 70 .
  • the third dielectric layer 31 and the fourth dielectric layer 33 can be a dielectric layer composed of a single medium (such as a thermosetting resin), and the third dielectric layer 31 and the fourth dielectric layer 33 can also be two different media. Composite medium layer formed by mixed pressure.
  • the specific layer structure of the third dielectric layer 31 and the fourth dielectric layer 33 can refer to the above-mentioned first dielectric layer.
  • the layer 21 and the second dielectric layer 23 will not be described in detail here.
  • the conductive layer 32 can be etched into a corresponding circuit pattern as required to have corresponding functions, and the embodiment of the present application does not strictly limit the specific use of the conductive layer 32 .
  • the antenna radiation layer 34 can be etched into antenna elements in different arrangements according to needs, and the specific arrangement form is not a key design of the embodiment of the present application, and will not be repeated here.
  • the radio frequency chip 40 is connected to the device layer 24 , so that the antenna radiation layer 34 and the radio frequency chip 40 can be located on both sides of the functional stack 10 .
  • the antenna radiation layer 34 couples or directly feeds the radio frequency chip 40 , and the radio frequency chip 40 transmits and/or receives radio frequency signals (such as millimeter wave signals) through the antenna radiation layer 34 .
  • the radio frequency chip 40 outputs antenna radio frequency signals, and the antenna radio frequency signals are transmitted to the antenna radiation layer 34 as energy, and the antenna radiation layer 34 converts the received energy into radio waves propagating in an unbounded medium (usually free space), The radio waves radiate to the surrounding space, thereby realizing the transmission of signals.
  • the antenna radiation layer 34 receives radio waves in space, converts the radio waves into energy, and transmits the energy to the radio frequency chip 40, and the radio frequency chip 40 processes the received energy to realize signal reception.
  • Embodiments of the present application also provide a method for preparing the antenna package substrate 100 .
  • the method for preparing the packaged antenna substrate 100 may at least include S100 and S200 , which are described in detail as follows.
  • the first dielectric layer 21 includes a first material layer 211 and a second material layer 212, the first material layer 211 is opposite to the second material layer
  • the second material layer 212 is close to the functional stack 10
  • the material used in the first material layer 211 is different from the material used in the second material layer 212
  • the second material layer 212 includes a material resistant to heat and oxygen aging.
  • the preparation of the functional stack 10 can refer to the conventional process, and the specific number of layers can also be selected according to the actual application scene of the packaged antenna substrate 100 , which is not strictly limited in the embodiments of the present application.
  • the first dielectric layer 21 includes a first material layer 211 and a second material layer 212, the first material layer 211 is opposite to the second material layer
  • the second material layer 212 is close to the functional stack 10
  • the material used in the first material layer 211 is different from the material used in the second material layer 212
  • the second material layer 212 includes a material resistant to heat and oxygen aging.
  • the first dielectric layer 21 and the feed network layer 22 are prepared, and the prepared first dielectric layer 21 and the feed network layer 22 are pressed together with the functional laminate 10 to obtain sequentially arranged on the functional laminate 10.
  • the first dielectric layer 21 and the feed network layer 22 are prepared simultaneously.
  • the prepared third dielectric layer 31 and the conductive layer 32 can be simultaneously pressed together with the functional laminate 10 combine.
  • the second dielectric layer 23 and the device layer 24 prepare the second dielectric layer 23 and the device layer 24, and press the prepared second dielectric layer 23 and the device layer 24 together with the functional stack 10, the first dielectric layer 21 and the feed network layer 22 in the previous steps combined to obtain the first dielectric layer 21 , the feed network layer 22 , the second dielectric layer 23 and the device layer 24 which are sequentially arranged on the functional stack 10 .
  • the fourth dielectric layer 33 and the antenna radiation layer 34 can be prepared simultaneously.
  • the prepared first dielectric layer 24 can be simultaneously The four dielectric layers 33 and the antenna radiation layer 34 are pressed together with the functional stack 10 , the third dielectric layer 31 and the conductive layer 32 .
  • the first dielectric layer 21 and/or the second dielectric layer 23 may include two different material layers, as follows with reference to FIG. 6, the first dielectric layer 21 includes a first material layer 211 and a second material layer The layer 212 is used as an example to illustrate the preparation of the first dielectric layer 21 and the feed network layer 22 sequentially disposed on the functional stack 10 .
  • the copper-clad core layer 25 includes a second material layer 212 and copper layers 26 disposed on opposite sides of the second material layer 212 .
  • the copper layer 26 is etched to form the feed network layer 22 covering the second material layer 212 .
  • the copper layer 26 in the copper clad core layer 25 that will be in contact with the first material layer 211 is completely removed.
  • the functional stack 10, the first material layer 211, the second material layer 212 and the feed network layer 22 are pressed together to form the first dielectric layer 21 and the feed network layer which are sequentially arranged on the functional stack 10 22.
  • the material used for the first material layer 211 is different from the material used for the second material layer 212 .

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Abstract

本申请提供一种封装天线基板及其制备方法、电子设备。所述封装天线基板包括功能叠层和层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。本申请的技术方案能够降低天线阵子与射频芯片之间传输线的损耗。

Description

封装天线基板及其制备方法、电子设备
本申请要求于2022年01月11日提交中国专利局、申请号为202210025312.2、申请名称为“封装天线基板及其制备方法、电子设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及通信技术领域，尤其涉及一种封装天线基板及其制备方法、电子设备。
背景技术
AiP(Antenna in Package，封装天线集成)技术和板载天线(Antenna-on-Board，AOB)技术中，天线阵子和射频芯片集成在电路板(Printed Circuit Board，PCB)的两个相背设置的表面，而为天线阵子进行馈电的馈电网络设置在电路板的内部，其能够在天线阵子和射频芯片之间传输信号。目前，天线阵子与射频芯片之间传输线的损耗较高，需要持续改善降低。
发明内容
本申请的实施例提供一种封装天线基板及其制备方法、电子设备，能够降低天线阵子与射频芯片之间传输线的损耗。
第一方面，本申请提供一种封装天线基板，所述封装天线基板包括功能叠层和层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。
需说明的是，第一介质层既可以设置在封装叠层与馈电网络层之间，第一介质层还可以设置在馈电网络层背离封装叠层一侧，仅需满足与馈电网络层接触即可。而第二材料层可以为任意抗热氧老化能力强的材料，如具有耐高温老化能力的热塑性的氟树脂。
其中，封装天线基板使用毫米波频段进行通信。可以理解的是，电磁波的工作频率越高，对应的工作波长越短。当电磁波的工作波长在毫米量级时，称这样的频段为毫米波频段，使用毫米波频段进行通信的好处在于毫米波频段具有非常宽的频谱资源，能够实现5G系统的超高数据传输速率。而5G系统中规划的毫米波频段较多，例如以28GHz为主的n257(26.5GHz-29.5GHz)频段，或者以39GHz为主的n260(37.0GHz-40.0GHz)频段。
可以理解的是，毫米波信号传输很大，通过采用封装天线基板，可以使射频芯片与天线阵子集成在封装天线基板上，以获取最低的链路损耗。但由于射频芯片与天线阵子之间传输线的损耗较高，会对封装天线基板的工作可靠性产生不良影响。而影响封装天线基板内部传输线损耗的主要因素之一为封装天线基板中的介质损耗。
由此，通过使与馈电网络层相邻的第一介质层具有两层材料不同的材料层，能够使第一介质层可以通过两种不同介质混压形成。而第一材料层相对于第二材料层更靠近功能叠层。也即为，在封装天线基板中，第一材料层为介质层中的内层结构，第二材料层 为介质层中的外层结构。而在第一介质层中，第一材料层具有良好的结合性能，能够与其他结构层(如功能叠层)具有较佳的结合力，以提升第一介质层整体的结合性能。第二材料层具有良好的耐热氧老化性能(亦可称之为抗热氧老化性能)，有利于提升封装天线基板整体的耐高温氧化能力，可靠性佳。
并且，相比于第一介质层采用单一介质压合形成，采用复合介质制备形成的第一介质层。一方面，可以最大限度的降低第一介质层在高温老化后损耗急剧恶化的情况，有效增强第一介质层的耐高温氧化能力，进而减少第一介质层因老化后介质损耗恶化而导致传输线损耗较高的问题，有利于减少封装天线基板整体的传输损耗，使封装天线基板具有良好的传输可靠性和稳定性。另一方面，能够有效改善封装天线基板整体的等效全向辐射功率(equivalent isotropically radiated power，EIRP)，使封装天线基板的工作可靠性得以提升。
一种可能的实施方式中，所述封装天线基板还包括第二介质层，所述功能叠层、所述第一介质层、所述馈电网络层和所述第二介质层依次层叠设置，所述第二介质层包括第三材料层和第四材料层，所述第四材料层相对于所述第三材料层靠近所述馈电网络层，所述第三材料层所采用的材料和所述第四材料层所采用的材料不相同，所述第四材料层包括耐热氧老化材料。
需说明的是，第四材料层可以为任意抗热氧老化能力强的材料，如具有耐高温老化能力的热塑性的氟树脂。
一种可能的实施方式中，所述第一材料层的材质包括聚苯醚或碳氢树脂。
其中，第一材料层的材料可以为低损耗的热固性树脂(半固化材料)。示例性地，第一材料层的材料可以为玻纤型号为1080、1078、1086、106、1037、1027、1067等的热固性树脂。
可以理解的是，第一材料层因采用聚苯醚或碳氢树脂而具备粘接作用，其与功能叠层和/或馈电网络层之间能够具有良好的结合力，故而能够使第一介质层牢固的粘接在功能叠层和/或第二介质层牢固的粘接在馈电网络层上。
一种可能的实施方式中，所述第二材料层的材质包括基板或氟树脂膜。
其中，第二材料层的材料可以为低损耗且耐高温老化的材料。需说明的是，基板可采用基板材料制备而成，其具有良好的耐热氧老化性能。例如，基板可以采用覆铜板(Copper Clad Laminate，CCL)中剥离表面铜层后的材料制备而成，或者，基板可以采用挠性覆铜板(Flexible Copper Clad Laminate，FCCL)中剥离表面铜层后的材料制备而成，其类型的选取可根据封装天线基板的实际应用场景而进行灵活调整，本申请的技术方案对此不做严格限制。
示例性地，第二材料层的材质可包括氟树脂，如包括聚四氟乙烯(PTFE，Poly Tetra Fluoro Ethylene)、可溶性聚四氟乙烯(Polytetrafluoro ethylene，PFA)、氟化乙烯丙烯共聚物(Fluorinated ethylene propylen，FEP)等及其混合物，也可以包括耐高温氧化的热固性树脂。
可以理解的是，第二材料层因采用基板或氟树脂膜而具有良好的耐高温老化能力，且还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第一介质 层能够因采用混压的复合介质而有效降低封装天线基板的传输损耗，使封装天线基板具有良好的工作可靠性。
一种可能的实施方式中，在10吉赫的频率下，所述第一介质层的介电损耗小于0.004。
由此，介电损耗满足此范围的第一介质层能够具有较低的介电损耗，能够使信号在第一介质层中的完整性较好，有利于改善封装天线基板的传输损耗。
一种可能的实施方式中，在10吉赫的频率下，所述第一介质层的介电常数小于4.0。
由此，介电损耗满足此范围的第一介质层能够具有较低的介电常数，能够有效改善高速传输信号的质量，提升信号速率，有利于改善封装天线基板的传输损耗。
一种可能的实施方式中，所述馈电网络层的表面粗糙度小于2微米。
其中，表面粗糙度(surface roughness)是指加工表面具有的较小间距和微小峰谷的不平度。其两波峰或两波谷之间的距离(波距)很小，属于微观几何形状误差。
由此，表面粗糙度满足此范围的馈电网络层能够具有较低的铜箔粗糙度，可以有效改善毫米波频段下的导体损耗，且此损耗在工作频率高的波段改善的更为明显，有利于降低封装天线基板的整体的传输线损耗。
一种可能的实施方式中，所述馈电网络层与所述第一介质层之间的剥离强度大于3磅/英寸。
由此，剥离强度(peel strength)满足此范围的第一介质层能够与馈电网络层具有较强的剥离强度，有利于改善毫米波频段下的导体损耗，进而降低封装天线基板的整体的传输线损耗。
第二方面，本申请还提供一种封装天线基板的制备方法，所述方法包括：
制备功能叠层；及
制备层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。
一种可能的实施方式中，所述制备制备层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料包括：
提供第一材料层和覆铜芯层，所述覆铜芯层包括第二材料层和设置在所述第二材料层相背设置的两面的铜层；
刻蚀所述铜层以形成覆盖所述第二材料层的馈电网络层；及
将所述功能叠层、所述第一材料层、所述第二材料层和所述馈电网络层一起压合，以形成层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，且所述第二材料层包括耐热氧老化材料。
第三方面，本申请还提供一种电子设备，所述电子设备包括主板和如上所述的封装天线基板，或者，所述电子包括主板和如上所述的制备方法所制得的封装天线基板；所 述封装天线基板连接至所述主板。
附图说明
图1是本申请实施例提供的电子设备的结构示意图；
图2是本申请实施例提供的封装天线基板的一种结构示意图；
图3是本申请实施例提供的封装天线基板的另一种结构示意图；
图4是本申请实施例提供的封装天线基板的又一种结构示意图；
图5是本申请实施例提供的封装天线基板的制备方法的流程示意图；
图6是本申请实施例提供的封装天线基板的制备方法的部分步骤示意图。
具体实施方式
为了方便理解，首先对本申请的实施例所涉及的术语进行解释。
和/或：仅仅是一种描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B这三种情况。
多个：是指两个或多于两个。
连接：应做广义理解，例如，A与B连接，可以是A与B直接相连，也可以是A与B通过中间媒介间接相连。
下面将结合附图，对本申请的具体实施方式进行清楚地描述。
随着5G(the 5th Generation，第五代(通信技术))和VR(Virtual Reality，虚拟现实)等高速率通信时代的来临，毫米波通信逐步成为焦点，毫米波天线的设计和应用需求也越来越旺盛。由于毫米波频段传输路径长短对信号幅度损耗影响非常大，且毫米波天线的加工精度要求非常高，因此具有极短天线馈线路径和高加工精度的AiP(Antenna in Package，封装天线集成)技术和板载天线(Antenna-on-Board，AOB)技术成为毫米波天线领域的主流技术。
在AiP(Antenna in Package，封装天线集成)技术和板载天线(Antenna-on-Board，AOB)技术中，天线阵子和射频芯片集成在电路板(Printed Circuit Board，PCB)的两个相背设置的表面，而为天线阵子进行馈电的馈电网络设置在电路板的内部，其能够在天线阵子和射频芯片之间传输信号。目前，天线阵子与射频芯片之间传输线的损耗较高，需要持续改善降低。
基于此，请结合参阅图1-图6，本申请的实施例提供一种封装天线基板100和应用封装天线基板100的电子设备200，能够降低天线阵子与射频芯片之间的传输线的损耗。
其中，电子设备200可以为但不限于为手机、平板电脑、笔记本电脑、智能手环、智能手表、等智能消费类电子设备200，也可以为如城域路由器、中心路由器等电信机房类设备，也可以为如数据中心服务器、数据中心交换机等IT计算机房类设备，也可以为如MDC(Mobile Data Center，移动数据中心)等车载类设备，其还可应用至工业机器人、轨道交通(例如地铁、高铁)或特种电源(例如舰船、飞机、车辆)等。
需说明的是，封装天线基板100不局限于应用至上述列举的设备，其还可以应用于任何涉及由天线实现信号接收与发送需求的设备，如具有无源天线阵列、有源射频收发或辐相控制功能的设备；或可应用于光模块；或可应用于基站，如射频拉远单元(Remote Radio Unit，RRU)、有源天线单元(Active Antenna Unit，AAU)、室内基站处理单元 (Building Base band Unite，BBU)、射频拉远集线器(Remote Radio Unit-Hub，RHUB)；或可应用于雷达等，本申请的实施例对此不做严格限制。
请参阅图1，电子设备200可以包括主板210和连接至主板210的封装天线基板100。主板210能够承载封装天线基板100并与封装天线基板100组装，进而实现与封装天线基板100之间的电气互连。示例性地，封装天线基板100可以为带球栅阵列封装(Ball Grid Arra，BGA)形式的封装基板，可通过设置在封装天线基板100上的焊球而实现与主板210之间的电连接。
需说明的是，图1的目的仅在于示意性的描述主板210和封装天线基板100的连接关系，并非是对各个设备的连接位置、具体构造及数量做具体限定。而本申请实施例示意的结构并不构成对电子设备200的具体限定。在本申请另一些实施例中，电子设备200可以包括比图示更多或更少的部件，或者组合某些部件，或者拆分某些部件，或者不同的部件布置。图示的部件可以以硬件，软件或软件和硬件的组合实现。
请结合参阅图2、图3和图4，封装天线基板100包括功能叠层10、第一增层20、第二增层30和射频芯片40(RFIC，Radio Frequency Integrated Circuit)。其中，封装天线基板100使用毫米波频段进行通信。
可以理解的是，电磁波的工作频率越高，对应的工作波长越短。当电磁波的工作波长在毫米量级时，称这样的频段为毫米波频段，使用毫米波频段进行通信的好处在于毫米波频段具有非常宽的频谱资源，能够实现5G系统的超高数据传输速率。而5G系统中规划的毫米波频段较多，例如以28GHz为主的n257(26.5GHz-29.5GHz)频段，或者以39GHz为主的n260(37.0GHz-40.0GHz)频段。
请继续参阅图2、图3和图4，功能叠层10包括多层线路层11、多层第一绝缘层12和多层第二绝缘层13。多层线路层11、多层第一绝缘层12和多层第二绝缘层13按照一层线路层11、一层第一绝缘层12、一层线路层11、一层第二绝缘层13的顺序连续交替层叠设置，以形成“线路层11-第一绝缘层12-线路层11-第二绝缘层13-线路层11...-线路层11”的布局设置。也即为，每相邻两层线路层11能够通过一层第一绝缘层12或一层第二绝缘层13间隔。而第一绝缘层12和第二绝缘层13可采用高频介质材料制成，以满足封装天线基板100的高频传输需求。且第一绝缘层12和第二绝缘层13所采用的材料不相同。示例性地，线路层11的材质可以为铜，如超低轮廓铜箔(HVLP)。第一绝缘层12的材质可以采用覆铜板(Copper Clad Laminate，CCL)中剥离表面铜层后的材料制备而成，第二绝缘层13的材质可以为热固性树脂。
可以理解的是，线路层11具备导电功能，通过在相邻两个线路层11之间设置第一绝缘层12或第二绝缘层13，能够有效把相邻两个线路层11间隔开，使相邻两个线路层11能够彼此独立的发挥其各自的作用而不会相互干涉，可靠性佳。
需说明的是，每一线路层11可根据需要而被刻蚀成为相应的线路图形，以具备相应的功能。例如，线路层11可以用作缝隙耦合层。或者，线路层11可以用作地层，以实现隔离或接地保护。或者，线路层11可以用作电源层，以实现为射频芯片40供电。或者，线路层11可以用作控制层，以控制如时钟信号(CLK)，片选(CSB)等控制信号。或者，线路层11可以用作带状线层，以实现为天线辐射单元馈电的功能。或者，线路层11可 以用作天线转接层。换言之，在功能叠层10中，多层线路层11各自的作用和其具体排布位置可根据应用场景进行选取和布置，本申请的实施例不做严格限制。
一种可能的实施方式中，请参阅图2，功能叠层10还可以包括层间互连结构50。可以理解的是，层间互连结构50可根据需要而设置在功能叠层10的预设位置，其能够将多层线路层11中需要互连的线路层11连接起来。另外，可通过在多层线路层11中需要互连的线路层11围绕层间互连结构50的位置处设置金属区，并通过在多层线路层11中不需要互连的线路层11围绕层间互连结构50的位置处设置绝缘区，以使多层线路层11中需进行互连的线路层11能够与层间互连结构50之间形成金属连接带，以及多层线路层11中不需要互连的线路层11能够与层间互连结构50之间形成绝缘隔离带，保障多层线路层11中需互连的线路层11与无需互连的线路层11之间彼此独立而不会发生干涉，进一步达成层间互连结构50的互连需求。示例性地，层间互连结构50可以为贯穿功能叠层10中所有线路层11的金属化过孔，其中，金属化过孔可理解为在过孔内部填充电镀金属而形成的电连接结构。
需说明的是，层间互连结构50的数量可根据封装天线基板100的制备需求而相应的调整为一个或多个。每一个层间互连结构50均要求一个独立的金属化过孔，例如若有N个层间互连结构50，则需有N个金属化通孔，N为正整数。而同一线路层11中可以存在不同的层间互连结构50，例如在同一线路层11中具有两个层间互连结构50，其中一个层间互连结构50可实现相邻两个线路层11之间的互连，另一个层间互连结构50可实现相邻三个线路层11之间的互连。另外，层间互连结构50可用于实现相邻的多个线路层11之间的互连，层间互连结构50也可用于实现不相邻的多个线路层11之间的互连。对于层间互连结构50的数量、设置位置、具体的互连需求等可根据封装天线基板100的实际应用需求进行选取，本申请的实施例对此不做严格限制。
情继续参阅图2、图3和图4，第一增层20和第二增层30分别设置在功能叠层10的两侧。也即为，功能叠层10为双面叠层，其相背设置的两面均可设置增层。换言之，第一增层20和第二增层30设置在功能叠层10相背设置的两面。需说明的是，第一增层20的层数和第二增层30的层数可以相同或不相同，可根据功能叠层10的实际应用需求进行设置。当第一增层20的层数与第二增层30的层数相同时，第一增层20和第二增层30对称地分布在功能叠层10的两侧，能够有效避免叠层加工时出现翘曲的缺陷，保证产品质量。例如，第一增层20的层数为两层，第二增层30的层数也为两层。当第一增层20的层数与第二增层30的层数不相同时，第一增层20和第二增层30非对称地分布在功能叠层10的两侧。例如，第一增层20的层数为三层，第二增层30的层数为五层。另外，如下是以功能叠层10的双面均设置增层为例进行说明，但也仅可在功能叠层10相背设置的两面中的任意一面设置增层，也即功能叠层10可以为单面叠层。本申请的实施例对于功能叠层10为单面叠层或双面叠层不做严格限制，可根据功能叠层10的实际应用需求进行灵活设置。
具体而言，第一增层20可以包括依次设置在功能叠层10上的第一介质层21、馈电网络层22、第二介质层23和器件层24。其中，第一介质层21和第二介质层23均可采用高频介质材料制成，以满足封装天线基板100的高频传输需求。馈电网络层22和器件 层24可采用铜箔制成，如超低轮廓铜箔(HVLP)。馈电网络层22的表面粗糙度可以小于2微米，表面粗糙度是指加工表面具有的较小间距和微小峰谷的不平度。其两波峰或两波谷之间的距离(波距)很小，属于微观几何形状误差。由此，表面粗糙度满足此范围的馈电网络层22能够具有较低的铜箔粗糙度，可以有效改善毫米波频段下的导体损耗，且此损耗在工作频率高的波段改善的更为明显，有利于降低封装天线基板100的整体的传输线损耗。另外，馈电网络层22与第一介质层21和/或第二介质层23之间的剥离强度可以大于3磅/英寸(如4磅/英寸)。由此，剥离强度满足此范围的第一介质层21和/或第二介质层23能够与馈电网络层22具有较强的剥离强度，有利于改善毫米波频段下的导体损耗，进而降低封装天线基板100的整体的传输线损耗。
可以理解的是，封装天线基板100为多层板结构，通过将馈电网络层22设置在封装天线基板100的次外层，可以将馈电网络层22设置在封装天线基板100的内部，从而使馈电网络层22能够在天线辐射单元和射频芯片40之间传输微波信号(例如28Hz以上)，有效保障封装天线基板100内部信号的稳定传输。
一种可能的实施方式中，如图2所示，第一介质层21包括第一材料层211和第二材料层212，第一材料层211为第一介质层21中与功能叠层10相接触的层结构，第二材料层212为第一介质层21中与馈电网络层22相接触的层结构。第一材料层211所采用的材料和第二材料层212所采用的材料不相同。
本实施方式中，第一材料层211相对于第二材料层212靠近功能叠层10，第一材料层211为低损耗粘接片，第二材料层212为高耐热氧老化材料层。
可以理解的是，第一材料层211相对于第二材料层212更靠近功能叠层10。也即为，在封装天线基板100中，第一材料层211为介质层中的内层结构，第二材料层212为介质层中的外层结构。通过将介质层中靠内侧的材料层设置为具有良好粘接性能，靠外侧的材料层设置为具有良好的耐热氧老化性能，能够使两者配合而为提升封装天线基板整体的耐高温氧化能力作出突出贡献，可靠性佳。
示例性地，第一材料层211的材质可以包括聚苯醚或碳氢树脂。第二材料层212的材质可以包括基板或氟树脂膜。
需说明的是，基板可采用基板材料制备而成，其具有良好的耐热氧老化性能。例如，基板可以采用覆铜板(Copper Clad Laminate，CCL)中剥离表面铜层后的材料制备而成，或者，基板可以采用挠性覆铜板(Flexible Copper Clad Laminate，FCCL)中剥离表面铜层后的材料制备而成，其类型的选取可根据封装天线基板的实际应用场景而进行灵活调整，本申请的技术方案对此不做严格限制。
可以理解的是，毫米波信号传输很大，通过采用封装天线基板100，可以使射频芯片40与天线阵子集成在封装天线基板100上，以获取最低的链路损耗。但由于封装天线基板100内部馈电网络传输线的损耗较高，会对封装天线基板100的工作可靠性产生不良影响。而影响封装天线基板100内部馈电网络传输线损耗的主要因素之一为封装天线基板100中的介质损耗。
由此，通过使与馈电网络层22相邻的第一介质层21具有两层材料不同的材料层，能够使第一介质层21可以通过两种不同介质混压形成。相比于第一介质层21采用单一 介质压合形成，采用复合介质制备形成的第一介质层21。一方面，可以最大限度的降低第一介质层21在高温老化后损耗急剧恶化的情况，有效增强第一介质层21的耐高温氧化能力，进而减少第一介质层21因老化后介质损耗恶化而导致传输线损耗较高的问题，有利于减少封装天线基板100整体的传输损耗，使封装天线基板100具有良好的传输可靠性和稳定性。另一方面，能够有效改善封装天线基板100整体的等效全向辐射功率(equivalent isotropically radiated power，EIRP)，使封装天线基板100的工作可靠性得以提升。
本实施方式中，在10吉赫(Ghz)的频率下，第一介质层21的介电损耗(Dissipation Factor，Df)可以小于0.004。换言之，第一材料层211的介电损耗和第二材料层212的介电损耗均可小于0.004。由此，介电损耗满足此范围的第一介质层21能够具有较低的介电损耗，能够使信号在第一介质层21中的完整性较好，有利于改善封装天线基板100的传输损耗。
而在10吉赫的频率下，第一介质层21的介电常数(Dielectric Constant，Dk)小于4.0。换言之，第一材料层211的介电常数和第二材料层212的介电常数均可小于4.0。由此，介电损耗满足此范围的第一介质层21能够具有较低的介电常数，能够有效改善高速传输信号的质量，提升信号速率，有利于改善封装天线基板100的传输损耗。
在一具体的应用场景中，第一材料层211的材质包括聚苯醚，第二材料层212的材质包括基板，基板可以采用覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第一材料层211因采用聚苯醚而具备粘接作用，其与功能叠层10之间能够具有良好的结合力，故而能够使第一介质层21牢固的粘接在功能叠层10上。而第二材料层212因采用基板而具有良好的耐高温老化能力，且还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第一介质层21能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。示例性地，第一材料层211可采用Megtron 7N级别的材料。第二材料层212的材质可包括氟树脂，如包括聚四氟乙烯(PTFE，Poly Tetra Fluoro Ethylene)、可溶性聚四氟乙烯(Polytetrafluoro ethylene，PFA)、氟化乙烯丙烯共聚物(Fluorinated ethylene propylen，FEP)等及其混合物，也可以包括耐高温氧化的热固性树脂。
在另一具体的应用场景中，第一材料层211的材质包括碳氢树脂，第二材料层212的材质包括基板，基板可以采用挠性覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第一材料层211因采用碳氢树脂而具备粘接作用，其与功能叠层10之间能够具有良好的结合力，故而能够使第一介质层21牢固的粘接在功能叠层10上。而第二材料层212因采用基板而具有良好的耐高温老化能力，且还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第一介质层21能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。
另一种可能的实施方式中，请参阅图3，第二介质层23包括第三材料层231和第四材料层232，第三材料层231为第二介质层23中与馈电网络层22相接触的层结构，第四材料层232为第二介质层23中与器件层24相接触的层结构。第三材料层231所采用的材料和第四材料层232所采用的材料不相同。
本实施方式中，第三材料层231相对于第四材料层232靠近功能叠层10，第三材料层231为低损耗粘接片，第四材料层232为高耐热氧老化材料层。
可以理解的是，第三材料层231相对于第四材料层232更靠近功能叠层10。也即为，在封装天线基板100中，第三材料层231为介质层中的内层结构，第四材料层232为介质层中的外层结构。通过将介质层中靠内侧的材料层设置为具有良好粘接性能，靠外侧的材料层设置为具有良好的耐热氧老化性能，能够使两者配合而为提升封装天线基板整体的耐高温氧化能力作出突出贡献，可靠性佳。
示例性地，第三材料层231的材质可以包括聚苯醚或碳氢树脂。第四材料层232的材质可以包括基板或氟树脂膜。
需说明的是，基板可采用基板材料制备而成，其具有良好的耐热氧老化性能。例如，基板可以采用覆铜板(Copper Clad Laminate，CCL)中剥离表面铜层后的材料制备而成，或者，基板可以采用挠性覆铜板(Flexible Copper Clad Laminate，FCCL)中剥离表面铜层后的材料制备而成，其类型的选取可根据封装天线基板的实际应用场景而进行灵活调整，本申请的技术方案对此不做严格限制。
可以理解的是，毫米波信号传输很大，通过采用封装天线基板100，可以使射频芯片40与天线阵子集成在封装天线基板100上，以获取最低的链路损耗。但由于封装天线基板100内部馈电网络传输线的损耗较高，会对封装天线基板100的工作可靠性产生不良影响。而影响封装天线基板100内部馈电网络传输线损耗的主要因素之一为封装天线基板100中的介质损耗。
由此，通过使与馈电网络层22相邻的第二介质层23具有两层材料不同的材料层，能够使第二介质层23可以通过两种不同介质混压形成。相比于第二介质层23采用单一介质压合形成，采用复合介质制备形成的第二介质层23。一方面，可以最大限度的降低第二介质层23在高温老化后损耗急剧恶化的情况，有效增强第二介质层23的耐高温氧化能力，进而减少第二介质层23因老化后介质损耗恶化而导致传输线损耗较高的问题，有利于减少封装天线基板100整体的传输损耗，使封装天线基板100具有良好的传输可靠性和稳定性。另一方面，能够有效改善封装天线基板100整体的等效全向辐射功率(equivalent isotropically radiated power，EIRP)，使封装天线基板100的工作可靠性得以提升。
本实施方式中，在10吉赫(Ghz)的频率下，第二介质层23的介电损耗(Dissipation Factor，Df)可以小于0.004。换言之，第三材料层231的介电损耗和第四材料层232的介电损耗均可小于0.004。由此，介电损耗满足此范围的第二介质层23能够具有较低的介电损耗，能够使信号在第二介质层23中的完整性较好，有利于改善封装天线基板100的传输损耗。
而在10吉赫的频率下，第二介质层23的介电常数(Dielectric Constant，Dk)小于4.0。换言之，第三材料层231的介电常数和第四材料层232的介电常数均可小于4.0。由此，介电损耗满足此范围的第二介质层23能够具有较低的介电常数，能够有效改善高速传输信号的质量，提升信号速率，有利于改善封装天线基板100的传输损耗。
在一具体的应用场景中，第三材料层231的材质包括聚苯醚，第四材料层232的材 质包括基板，基板可以采用覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第三材料层231因采用聚苯醚而具备粘接作用，其与馈电网络层22之间能够具有良好的结合力，故而能够使第二介质层23牢固的粘接在馈电网络层22上。而第四材料层232因采用基板而具有良好的耐高温老化能力，可长期工作在高温环境中，且老化后损耗恶化小。还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第二介质层23能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。示例性地，第三材料层231可采用Megtron 7N级别的材料。第四材料层232的材质可包括氟树脂，如包括聚四氟乙烯(PTFE，Poly Tetra Fluoro Ethylene)、可溶性聚四氟乙烯(Polytetrafluoro ethylene，PFA)、氟化乙烯丙烯共聚物(Fluorinated ethylene propylen，FEP)等及其混合物，也可以包括耐高温氧化的热固性树脂。
在另一具体的应用场景中，第三材料层231的材质包括碳氢树脂，第四材料层232的材质包括基板，基板可以采用挠性覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第三材料层231因采用碳氢树脂而具备粘接作用，其与馈电网络层22之间能够具有良好的结合力，故而能够使第二介质层23牢固的粘接在馈电网络层22上。而第四材料层232因采用基板而具有良好的耐高温老化能力，可长期工作在高温环境中，且老化后损耗恶化小。还能够搭配更低粗糙度的铜箔。由此，第一介质层21能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。
又一种可能的实施方式中，请参阅图4，第一介质层21包括第一材料层211和第二材料层212。在第一介质层21中，第一材料层211为第一介质层21中与功能叠层10相接触的层结构，第二材料层212为第一介质层21中与馈电网络层22相接触的层结构。第二介质层23包括第三材料层231和第四材料层232。在第二介质层23中，第三材料层231为第二介质层23中与馈电网络层22相接触的层结构，第四材料层232为第二介质层23中与器件层24相接触的层结构。第三材料层231所采用的材料和第四材料层232所采用的材料不相同。
本实施方式中，第一材料层211相对于第二材料层212靠近功能叠层10，第三材料层231相对于第四材料层232更靠近功能叠层10。第一材料层211和第三材料层231为低损耗粘接片，第二材料层212和第四材料层232为高耐热氧老化材料层。
可以理解的是，第一材料层211相对于第二材料层212更靠近功能叠层10，第三材料层231相对于第四材料层232更靠近功能叠层10。也即为，在封装天线基板100中，第一材料层211和第三材料层231为介质层中的内层结构，第二材料层212和第四材料层232为介质层中的外层结构。通过将介质层中靠内侧的材料层设置为具有良好粘接性能，靠外侧的材料层设置为具有良好的耐热氧老化性能，能够使两者配合而为提升封装天线基板整体的耐高温氧化能力作出突出贡献，可靠性佳。
示例性地，第一材料层211和第三材料层231的材质可以包括聚苯醚或碳氢树脂。第二材料层212和第四材料层232的材质可以包括基板或氟树脂膜。
需说明的是，基板可采用基板材料制备而成，其具有良好的耐热氧老化性能。例如， 基板可以采用覆铜板(Copper Clad Laminate，CCL)中剥离表面铜层后的材料制备而成，或者，基板可以采用挠性覆铜板(Flexible Copper Clad Laminate，FCCL)中剥离表面铜层后的材料制备而成，其类型的选取可根据封装天线基板的实际应用场景而进行灵活调整，本申请的技术方案对此不做严格限制。
可以理解的是，毫米波信号传输很大，通过采用封装天线基板100，可以使射频芯片40与天线阵子集成在封装天线基板100上，以获取最低的链路损耗。但由于封装天线基板100内部馈电网络传输线的损耗较高，会对封装天线基板100的工作可靠性产生不良影响。而影响封装天线基板100内部馈电网络传输线损耗的主要因素之一为封装天线基板100中的介质损耗。
由此，通过使与馈电网络层22相邻的第一介质层21和第二介质层23具有两层材料不同的材料层，能够使第一介质层21和第二介质层23可以通过两种不同介质混压形成。相比于第一介质层21和第二介质层23采用单一介质压合形成，采用复合介质制备形成的第一介质层21和第二介质层23。一方面，可以最大限度的降低第一介质层21和第二介质层23在高温老化后损耗急剧恶化的情况，有效增强第二介质层23的耐高温氧化能力，进而减少第一介质层21和第二介质层23因老化后介质损耗恶化而导致传输线损耗较高的问题，有利于减少封装天线基板100整体的传输损耗，使封装天线基板100具有良好的传输可靠性和稳定性。另一方面，能够有效改善封装天线基板100整体的等效全向辐射功率(equivalent isotropically radiated power，EIRP)，使封装天线基板100的工作可靠性得以提升。
本实施方式中，在10吉赫(Ghz)的频率下，第一介质层21和第二介质层的介电损耗(Dissipation Factor，Df)和第二介质层23的介电损耗均可以小于0.004。换言之，第一介质层21的第一材料层211的介电损耗和第二材料层212的介电损耗均可小于0.004，第二介质层23的第三材料层231的介电损耗和第四材料层232的介电损耗均可小于0.004。由此，介电损耗满足此范围的第一介质层21和第二介质层23能够具有较低的介电损耗，能够使信号在第一介质层21和第二介质层23中的完整性较好，有利于改善封装天线基板100的传输损耗。
而在10吉赫的频率下，第一介质层21的介电常数(Dielectric Constant，Dk)和第二介质层23的介电常数小于4.0。换言之，第一介质层21的第一材料层211的介电常数和第二材料层212的介电常数均可小于4.0，第二介质层23的第三材料层231的介电常数和第四材料层232的介电常数均可小于4.0。由此，介电损耗满足此范围的第一介质层21和第二介质层23能够具有较低的介电常数，能够有效改善高速传输信号的质量，提升信号速率，有利于改善封装天线基板100的传输损耗。
在一具体的应用场景中，第一材料层211和第三材料层231的材质包括聚苯醚，第二材料层212和第四材料层232的材质包括基板，基板可以采用覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第一材料层211和第三材料层231因采用聚苯醚而具备粘接作用，其与功能叠层10和馈电网络层22之间能够具有良好的结合力，故而能够使第一介质层21牢固的粘接在功能叠层10以及第二介质层23牢固的粘接在馈电网络层22上。而第二材料层212和第四材料层232因采用基板而具有良好的耐高温老化能力， 可长期工作在高温环境中，且老化后损耗恶化小。还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第一介质层21和第二介质层23能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。示例性地，第一材料层211和第三材料层231可采用Megtron 7N级别的材料。第二材料层212和第四材料层232的材质可包括氟树脂，如包括聚四氟乙烯(PTFE，Poly Tetra Fluoro Ethylene)、可溶性聚四氟乙烯(Polytetrafluoro ethylene，PFA)、氟化乙烯丙烯共聚物(Fluorinated ethylene propylen，FEP)等及其混合物，也可以包括耐高温氧化的热固性树脂。
在另一具体的应用场景中，第一材料层211和第三材料层231的材质包括碳氢树脂，第二材料层212和第四材料层232的材质包括基板，基板可以采用挠性覆铜板中剥离表面铜层后的材料制备而成。可以理解的是，第一材料层211和第三材料层231因采用碳氢树脂而具备粘接作用，其与功能叠层10和馈电网络层22之间能够具有良好的结合力，故而能够使第一介质层21牢固的粘接在功能叠层10以及第二介质层23牢固的粘接在馈电网络层22上。而第二材料层212和第四材料层232因采用基板而具有良好的耐高温老化能力，可长期工作在高温环境中，且老化后损耗恶化小。还能够与铜箔具有较高的结合力，从而能够搭配更低粗糙度的铜箔。由此，第一介质层21和第二介质层23能够因采用混压的复合介质而有效降低封装天线基板100的传输损耗，使封装天线基板100具有良好的工作可靠性。
请结合参阅图2、图3和图4，本申请的实施例中，第一介质层21可具有一阶金属化过孔60，一阶金属化过孔60贯穿第一介质层21，功能叠层10与馈电网络层22通过一阶金属化过孔60电性连接。第二介质层23可具有二阶金属化过孔70，二阶金属化过孔70贯穿第二介质层23，馈电网络层22与器件层24通过二阶金属化过孔70电性连接。
由此，能够通过一阶金属化过孔60和二阶金属化过孔70搭配细线与密距而实现层间互连，以实现单位面积中能够搭载更多的电子元器件或布设更多的线路，能够大大增强封装天线基板100内部的信号传导性能。
可以理解的是，一阶金属化过孔60和二阶金属化过孔70的数量可根据需要而为一个或多个。一阶金属化过孔60和二阶金属化过孔70的孔位可以相互错开，也可以在垂直方向上叠合在一起。本申请的实施例对于一阶金属化过孔60和二阶金属化过孔70的形状、数量、位置等不做严格限制。
需说明的是，如上是以第一增层20为二阶增层为例进行说明，但第一增层20实际还可以为三阶增层或三阶以上增层，当第一增层20为三阶或三阶以上增层时，第一增层20中的每一介质层均可参阅前述描述而为两种介质混压所形成的复合介质层，本申请的实施例对此不做严格限制。
请结合参阅图2、图3和图4，第二增层30可与第一增层20的层数一致而也为二阶增层，第二增层30可包括依次设置在功能叠层10上的第三介质层31、导电层32、第四介质层33和天线辐射层34。其中，第三介质层31和第四介质层33均可采用高频介质材料制成，以满足封装天线基板100的高频传输需求。导电层32和天线辐射层34均可采用铜箔制成，如超低轮廓铜箔(HVLP)。
第三介质层31可具有一阶金属化过孔60，一阶金属化过孔60贯穿第三介质层31，功能叠层10与导电层32通过一阶金属化过孔60电性连接。第四介质层33可具有二阶金属化过孔70，二阶金属化过孔70贯穿第四介质层33，天线辐射层34与导电层32通过二阶金属化过孔70电性连接。
由此，能够通过一阶金属化过孔60和二阶金属化过孔70搭配细线与密距而实现层间互连，以实现单位面积中能够搭载更多的电子元器件或布设更多的线路，能够大大增强封装天线基板100内部的信号传导性能。
可以理解的是，一阶金属化过孔60和二阶金属化过孔70的数量可根据需要而为一个或多个。一阶金属化过孔60和二阶金属化过孔70的孔位可以相互错开，也可以在垂直方向上叠合在一起。本申请的实施例对于一阶金属化过孔60和二阶金属化过孔70的形状、数量、位置等不做严格限制。
需说明的是，第三介质层31和第四介质层33即可以为单一介质(如热固性树脂)构成的介质层，第三介质层31和第四介质层33也可以为两种不同的介质混压形成的复合介质层。当第三介质层31和第四介质层33为两种不同的介质混压形成的复合介质层时，第三介质层31和第四介质层33具体的层结构构成可参阅上述的第一介质层21和第二介质层23，在此不再赘述。而导电层32可根据需要而被刻蚀成为相应的线路图形，以具备相应的功能，本申请的实施例对于导电层32的具体用途不做严格限制。天线辐射层34可根据需要而被刻蚀成为不同排布形式的天线阵子，其具体排布形式不是本申请的实施例的关键设计，在此不再赘述。
请结合参阅图2、图3和图4，射频芯片40连接至器件层24，由此，能够使天线辐射层34和射频芯片40位于功能叠层10的两侧。天线辐射层34耦合或直接馈电射频芯片40，射频芯片40通过天线辐射层34发射和/或接收射频信号(如毫米波信号)。具体而言，射频芯片40输出天线射频信号，天线射频信号作为能量传输至天线辐射层34，天线辐射层34将接收到的能量转换成在无界媒介(通常是自由空间)中传播的无线电波，该无线电波向周围空间辐射，进而实现信号的发送。天线辐射层34接收到空间中的无线电波，将该无线电波转换为能量，该能量传输至射频芯片40，射频芯片40将接收到的能量进行处理，进而实现信号的接收。
本申请的实施例还提供一种封装天线基板100的制备方法，关于封装天线基板100的结构请参阅图1-图4以及前述描述，在此不在赘述。请参阅图5，封装天线基板100的制备方法至少可以包括S100和S200，详细描述如下。
S100：制备功能叠层10。
S200：制备层叠设置在功能叠层10上的第一介质层21和馈电网络层22，第一介质层21包括第一材料层211和第二材料层212，第一材料层211相对于第二材料层212靠近功能叠层10，第一材料层211所采用的材料和第二材料层212所采用的材料不相同，第二材料层212包括耐热氧老化材料。
以下将对各个步骤分别进行进一步的描述。
S100：制备功能叠层10。
可以理解的是，本申请的实施例的关键设计不在于功能叠层10的制备，功能叠层10 的制备可参阅常规流程，其具体层数也可根据封装天线基板100的实际应用场景进行选取，本申请的实施例对此不做严格限制。
S200：制备层叠设置在功能叠层10上的第一介质层21和馈电网络层22，第一介质层21包括第一材料层211和第二材料层212，第一材料层211相对于第二材料层212靠近功能叠层10，第一材料层211所采用的材料和第二材料层212所采用的材料不相同，第二材料层212包括耐热氧老化材料。
首先，制备第一介质层21和馈电网络层22，并将制备得到的第一介质层21和馈电网络层22与功能叠层10一起压合，以得到依次设置在功能叠层10上的第一介质层21和馈电网络层22。其中，在制备第一介质层21和馈电网络层22的工艺步骤中，可同步制备第三介质层31和导电层32。在将制备得到第一介质层21和馈电网络层22与功能叠层10一起压合的工艺步骤中，可同步将制备得到的第三介质层31和导电层32与功能叠层10一起压合。
其次，制备第二介质层23和器件层24，并将制备得到的第二介质层23和器件层24与前述步骤中的功能叠层10、第一介质层21和馈电网络层22一起压合，以得到依次设置在功能叠层10上的第一介质层21、馈电网络层22、第二介质层23和器件层24。其中，在制备第二介质层23和器件层24的工艺步骤中，可同步制备第四介质层33和天线辐射层34。在将制备得到的第二介质层23和器件层24与前述步骤中的功能叠层10、第一介质层21和馈电网络层22一起压合的工艺步骤中，可同步将制备得到的第四介质层33和天线辐射层34与功能叠层10、第三介质层31和导电层32一起压合。
可以理解的是，第一介质层21和/或第二介质层23均可包括两种不同的材料层，如下将结合图6，以第一介质层21包括第一材料层211和第二材料层212为例来对制备依次设置在功能叠层10上的第一介质层21和馈电网络层22进行说明。
首先，提供第一材料层211和覆铜芯层25，覆铜芯层25包括第二材料层212和设置在第二材料层212相背设置的两面的铜层26。
其次，刻蚀铜层26以形成覆盖第二材料层212的馈电网络层22，此步骤中，会将覆铜芯层25中将与第一材料层211接触的铜层26完全去除。
接着，将功能叠层10、第一材料层211、第二材料层212和馈电网络层22一起压合，以形成依次设置在功能叠层10上的第一介质层21和馈电网络层22，第一材料层211所采用的材料和第二材料层212所采用的材料不相同。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (11)

  1. 一种封装天线基板，其特征在于，所述封装天线基板包括功能叠层和层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。
  2. 如权利要求1所述的封装天线基板，其特征在于，所述封装天线基板还包括第二介质层，所述功能叠层、所述第一介质层、所述馈电网络层和所述第二介质层依次层叠设置，所述第二介质层包括第三材料层和第四材料层，所述第四材料层相对于所述第三材料层靠近所述馈电网络层，所述第三材料层所采用的材料和所述第四材料层所采用的材料不相同，所述第四材料层包括耐热氧老化材料。
  3. 如权利要求1或2任一项所述的封装天线基板，其特征在于，所述第一材料层的材质包括聚苯醚或碳氢树脂。
  4. 如权利要求1-3任一项所述的封装天线基板，其特征在于，所述第二材料层的材质包括基板或氟树脂膜。
  5. 如权利要求1-4任一项所述的封装天线基板，其特征在于，在10吉赫的频率下，所述第一介质层的介电损耗小于0.004。
  6. 如权利要求1-5任一项所述的封装天线基板，其特征在于，在10吉赫的频率下，所述第一介质层的介电常数小于4.0。
  7. 如权利要求1-6任一项所述的封装天线基板，其特征在于，所述馈电网络层的表面粗糙度小于2微米。
  8. 如权利要求1-7任一项所述的封装天线基板，其特征在于，所述馈电网络层与所述第一介质层之间的剥离强度大于3磅/英寸。
  9. 一种封装天线基板的制备方法，其特征在于，所述方法包括：
    制备功能叠层；及
    制备层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。
  10. 如权利要求9所述的方法，其特征在于，所述制备层叠设置在所述功能叠层上的 第一介质层和馈电网络层，所述第一介质层包括第一材料层和第二材料层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料包括：
    提供第一材料层和覆铜芯层，所述覆铜芯层包括第二材料层和设置在所述第二材料层相背设置的两面的铜层；
    刻蚀所述铜层以形成覆盖所述第二材料层的馈电网络层；及
    将所述功能叠层、所述第一材料层、所述第二材料层和所述馈电网络层一起压合，以形成层叠设置在所述功能叠层上的第一介质层和馈电网络层，所述第一材料层相对于所述第二材料层靠近所述功能叠层，所述第一材料层所采用的材料和所述第二材料层所采用的材料不相同，所述第二材料层包括耐热氧老化材料。
  11. 一种电子设备，其特征在于，所述电子设备包括主板和如权利要求1-8任一项所述的封装天线基板，或者，所述电子包括主板和如权利要求9-10任一项所述的制备方法所制得的封装天线基板；所述封装天线基板连接至所述主板。
PCT/CN2022/143950 2022-01-11 2022-12-30 封装天线基板及其制备方法、电子设备 WO2023134474A1 (zh)

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WO2020000250A1 (zh) * 2018-06-27 2020-01-02 华为技术有限公司 一种天线封装结构
WO2020024115A1 (zh) * 2018-07-31 2020-02-06 华为技术有限公司 一种芯片组合件及终端设备
WO2020077617A1 (zh) * 2018-10-19 2020-04-23 华为技术有限公司 一种天线封装结构及其制造方法
WO2020124436A1 (zh) * 2018-12-19 2020-06-25 华为技术有限公司 封装天线基板及其制造方法、封装天线及终端
CN114464983A (zh) * 2022-01-11 2022-05-10 华为技术有限公司 封装天线基板及其制备方法、电子设备

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WO2020024115A1 (zh) * 2018-07-31 2020-02-06 华为技术有限公司 一种芯片组合件及终端设备
WO2020077617A1 (zh) * 2018-10-19 2020-04-23 华为技术有限公司 一种天线封装结构及其制造方法
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