WO2023132402A1 - Appareil de traitement de substrat - Google Patents

Appareil de traitement de substrat Download PDF

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Publication number
WO2023132402A1
WO2023132402A1 PCT/KR2022/002111 KR2022002111W WO2023132402A1 WO 2023132402 A1 WO2023132402 A1 WO 2023132402A1 KR 2022002111 W KR2022002111 W KR 2022002111W WO 2023132402 A1 WO2023132402 A1 WO 2023132402A1
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WO
WIPO (PCT)
Prior art keywords
plasma
substrate processing
sealing
chamber
processing apparatus
Prior art date
Application number
PCT/KR2022/002111
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English (en)
Korean (ko)
Inventor
서효정
윤성진
양수영
김범석
박종우
김진욱
Original Assignee
피에스케이 주식회사
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Publication date
Application filed by 피에스케이 주식회사 filed Critical 피에스케이 주식회사
Publication of WO2023132402A1 publication Critical patent/WO2023132402A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for processing a substrate using plasma.
  • Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields or RF Electromagnetic Fields.
  • a semiconductor device manufacturing process includes an ashing or etching process of removing a thin film on a substrate using plasma. The ashing or etching process is performed when ion and radical particles contained in the plasma collide with or react with a film on the substrate.
  • An apparatus for processing a substrate using such a plasma is composed of various parts fastened to each other.
  • the O-ring is provided with a material having elasticity such as rubber. The sealing of the connection between parts is achieved by using the restoring force of the O-ring.
  • Plasma generated in the chamber collides with the chamber to increase the temperature of the chamber and components adjacent to the chamber.
  • the higher the density of the plasma generated in the chamber the higher the thermal load is applied to the chamber and components adjacent to the chamber.
  • the aforementioned O-rings are susceptible to such thermal loads.
  • sealing of a connection between parts is performed using a restoring force, but when a thermal load is applied to the O-ring, the O-ring loses elasticity and loses its function.
  • An object of the present invention is to provide a substrate processing apparatus capable of effectively sealing between parts of the substrate processing apparatus.
  • an object of the present invention is to provide a substrate processing apparatus capable of extending the life of the sealing member by enabling the movement path of heat generated in the chamber to bypass the sealing member.
  • Another object of the present invention is to provide a substrate processing apparatus capable of flexibly expanding or contracting a sealing member due to heat.
  • An apparatus for processing a substrate includes a first body; a second body different from the first body; and a sealing unit sealing a connection portion between the first body and the second body, wherein the sealing unit includes: a sealing member sealing the connection portion; and an interface member that is in contact with the first body or the second body and is made of a material having higher thermal conductivity than the sealing member.
  • the interface member may have a ring shape including an incision part of which is cut out.
  • the sealing unit the ring body for fixing the position of the sealing member; and a holder fixing the ring body and the interface member.
  • the interface member may include a contact surface contacting the first body or the second body; and an inclined surface facing the holder.
  • a channel groove recessed in one direction from one surface of the ring body is formed in the ring body, and the sealing unit further includes a fluid channel provided in the channel groove and through which a cooling fluid flows. can do.
  • the holder may include a cover portion covering the channel groove; And it may include an inclined portion facing the inclined surface.
  • the first body may be a chamber in which plasma is generated or flows
  • the second body may be a flange connected to the chamber
  • a substrate processing apparatus includes a process chamber having a processing space; a plasma chamber communicating with the processing space and having a plasma generation space in which plasma is generated; A plasma source generating the plasma in the plasma chamber, the plasma source comprising: an antenna surrounding the plasma chamber; a power source for applying power to the antenna; and a flange disposed above or below the antenna; and at least one sealing unit sealing a connection between the plasma chamber and the flange, wherein the sealing unit includes: a sealing member sealing the connection; and an interface member contacting the plasma chamber and made of a material having higher thermal conductivity than the sealing member.
  • the interface member may have a ring shape including an incision part of which is cut out.
  • the interface member may be provided with a material containing metal
  • the sealing member may be provided with a material containing rubber
  • the sealing unit fixes the position of the sealing member
  • the ring body is formed with a channel groove; and a holder fixing the ring body and the interface member.
  • the interface member may include a contact surface contacting the plasma chamber; and an inclined surface facing the holder.
  • the holder may include a cover portion covering the channel groove; And it may include an inclined portion facing the inclined surface.
  • the ring body and the holder may be provided with a material containing metal.
  • the sealing unit may further include a fluid channel provided in the channel groove and through which a cooling fluid flows.
  • the fluid channel may be provided with a material containing copper.
  • the flange may include an upper flange disposed above the antenna; and a lower flange disposed under the antenna, wherein a plurality of sealing units are provided, one of which is configured to seal a connection between the upper flange and the plasma chamber, and the other is the lower flange. And it may be configured to seal the connection portion of the plasma chamber.
  • sealing between parts of a substrate processing apparatus can be effectively performed.
  • the life of the sealing member can be extended by allowing the movement path of heat generated in the chamber to bypass the sealing member.
  • expansion or contraction of the sealing member due to heat can be made flexibly.
  • FIG. 1 is a diagram schematically showing a substrate processing facility of the present invention.
  • FIG. 2 is a view showing a substrate processing apparatus performing a plasma processing process in the process chamber of FIG. 1 .
  • FIG. 3 is a view showing a part of a cross section of the sealing unit of FIG. 2 .
  • FIG. 4 is a view showing a cross section of the interface member of FIG. 3 .
  • FIG. 5 is a view showing a part of the interface member viewed from the top of FIG. 3 .
  • FIG. 6 is a view showing a cross-section of the holder of FIG. 5;
  • FIG. 7 is a view showing how the substrate processing apparatus of FIG. 2 performs a plasma processing process.
  • FIG. 8 is a view showing a heat movement path in the sealing unit of FIG. 7 .
  • FIGS. 1 to 8 embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8 .
  • a substrate processing facility 1 has an equipment front end module (EFEM) 20 and a processing module 30 .
  • EFEM equipment front end module
  • the facility front end module 20 and processing module 30 are arranged in one direction.
  • the facility front end module 20 has a load port 10 and a transfer frame 21 .
  • the load port 10 is disposed in front of the equipment front end module 20 in the first direction 11 .
  • the load port 10 has a plurality of support parts 6 . Each support part 6 is arranged in a row in the second direction 12, and a carrier 4 (for example, a cassette, FOUP, etc.) is settled. In the carrier 4, a substrate W to be subjected to a process and a substrate W after processing are received.
  • the transfer frame 21 is disposed between the load port 10 and the processing module 30 .
  • the transfer frame 21 includes a first transfer robot 25 disposed therein and transferring the substrate W between the load port 10 and the processing module 30 .
  • the first transfer robot 25 moves along the transfer rail 27 provided in the second direction 12 to transfer the substrate W between the carrier 4 and the processing module 30 .
  • the processing module 30 includes a load lock chamber 40 , a transfer chamber 50 , and a process chamber 60 .
  • the load lock chamber 40 is disposed adjacent to the transfer frame 21 .
  • the load lock chamber 40 may be disposed between the transfer chamber 50 and the facility front end module 20 .
  • the load lock chamber 40 is a waiting space before the substrate W to be provided for the process is transferred to the process chamber 60 or before the substrate W after the process is transferred to the front end module 20 of the facility.
  • the transfer chamber 50 is disposed adjacent to the load lock chamber 40 .
  • the transfer chamber 50 When viewed from the top, the transfer chamber 50 has a polygonal body. Referring to FIG. 1 , the transfer chamber 50 has a pentagonal body when viewed from above.
  • a load lock chamber 40 and a plurality of process chambers 60 are disposed along the circumference of the body.
  • a passage (not shown) through which the substrate W enters and exits is formed on each sidewall of the body, and the passage connects the transfer chamber 50 and the load lock chamber 40 or the process chambers 60 .
  • Each passage is provided with a door (not shown) that opens and closes the passage to seal the inside.
  • a second transfer robot 53 that transfers the substrate W between the load lock chamber 40 and the process chamber 60 is disposed in the inner space of the transfer chamber 50 .
  • the second transfer robot 53 transfers an unprocessed substrate W waiting in the load lock chamber 40 to the process chamber 60 or transfers a substrate W after processing to the load lock chamber 40. do.
  • the substrates W are transferred between the process chambers 60 in order to sequentially provide the substrates W to the plurality of process chambers 60 .
  • the transfer chamber 50 has a pentagonal body
  • the load lock chambers 40 are disposed on the side walls adjacent to the front end module 20 of the equipment, and the process chambers 60 are continuously arranged on the other side walls. are placed by
  • the transfer chamber 50 may be provided in various shapes according to the required process module as well as the above shape.
  • the process chamber 60 is disposed along the circumference of the transfer chamber 50 .
  • a plurality of process chambers 60 may be provided.
  • processing of the substrate W is performed.
  • the process chamber 60 receives the substrate W from the second transfer robot 53 and processes the substrate W, and provides the substrate W upon completion of the process to the second transfer robot 53 .
  • Processes performed in each of the process chambers 60 may be different from each other.
  • the substrate processing apparatus 1000 performing the plasma processing process in the process chamber 60 will be described in detail.
  • FIG. 2 is a view showing a substrate processing apparatus performing a plasma processing process in the process chamber of FIG. 1 .
  • the substrate processing apparatus 1000 performs a predetermined process on a substrate W using plasma.
  • the substrate processing apparatus 1000 may etch or ashing the thin film on the substrate (W).
  • the thin film may be various types of films such as a polysilicon film, a silicon oxide film, and a silicon nitride film.
  • the thin film may be a natural oxide film or a chemically generated oxide film.
  • the substrate processing apparatus 1000 may include a process processing unit 200 , a plasma generating unit 400 , an exhaust unit (not shown), and a sealing unit 500 .
  • the processing unit 200 provides a processing space 212 in which a substrate W is placed and processing of the substrate is performed.
  • Plasma is generated by discharging the process gas of the plasma generating unit 400 and supplied to the processing space 212 of the process processing unit 200 .
  • An exhaust unit (not shown) may discharge process gases remaining inside the process processor 200 and/or reaction by-products generated during substrate processing to the outside, and maintain the pressure in the process processor 200 at a set pressure.
  • An exhaust unit (not shown) may adjust the pressure of the processing space 212 to a pressure close to vacuum while the substrate W is being processed.
  • the process processor 200 may include a process chamber 210 , a support unit 230 , and a baffle 250 .
  • the process chamber 210 may have a process space 212 in which a process of processing the substrate W is performed.
  • An upper portion of the process chamber 210 may be open, and an opening (not shown) may be formed in a sidewall.
  • the substrate W enters and exits the process chamber 210 through the opening.
  • the opening may be opened and closed by an opening and closing member such as a door (not shown).
  • an exhaust hole (not shown) is formed on the bottom surface of the process chamber 210 .
  • the exhaust hole may be connected to an exhaust unit including a pressure reducing member such as a pump to exhaust process gas and/or by-products in the processing space 212 to the outside of the processing space 212 .
  • the support unit 230 supports the substrate W in the processing space 212 .
  • the support unit 230 may chuck the substrate W using static electricity or vacuum pressure.
  • the support unit 230 may include a lift pin module (not shown), and may move the substrate W in a vertical direction.
  • the baffle 250 is positioned above the support unit 230 to face the support unit 230 .
  • the baffle 250 may be disposed between the support unit 230 and the plasma generator 400 .
  • Plasma generated by the plasma generator 400 may pass through a plurality of holes (not shown) formed in the baffle 250 .
  • the baffle 250 uniformly supplies the plasma flowing into the processing space 212 to the substrate W. Holes (not shown) formed in the baffle 250 are provided as through holes provided from the upper surface to the lower surface of the baffle 250 and may be uniformly formed in each area of the baffle 250 .
  • the plasma generator 400 may be located above the process chamber 210 .
  • the plasma generating unit 400 may generate plasma by discharging process gas and supply the generated plasma to the processing space 212 .
  • the plasma generator 400 includes a plasma chamber 410 (an example of the first body), a gas supply port 420, a plasma source 430, a diffusion chamber 440, a gas supply unit 450, and a sealing unit ( 500) may be included.
  • the plasma chamber 410 may have an open top and bottom surfaces.
  • the plasma chamber 410 may have a cylindrical shape with open top and bottom surfaces.
  • the plasma chamber 410 may have a cylindrical shape with open top and bottom surfaces.
  • the plasma chamber 410 may have a plasma generating space 412 .
  • the plasma chamber 410 may be made of a quartz material.
  • the plasma chamber 410 may have a tube shape.
  • a gas supply port 420 may be disposed above the plasma chamber 410 , and a diffusion chamber 440 may be disposed below the plasma chamber 410 .
  • the gas supply port 420 may receive process gas from the gas supply unit 450 and supply it to the plasma generation space 412 .
  • the process gas supplied by the gas supply unit 450 may include fluorine and/or hydrogen.
  • the gas supply unit 450 includes a gas supply source 451 for storing and/or supplying process gas, and a gas supply line 453 connected to the gas supply source 451 to deliver process gas to the gas supply port 420. ) may be included.
  • the process gas supplied to the plasma generating space 412 may be excited into a plasma state by an electric field generated by an antenna 432 described later.
  • Process gas may be supplied to the plasma generating space 412 through the gas supply port 424 .
  • Gas supplied to the plasma generation space 412 may flow into the processing space 212 via the baffle 250 .
  • the plasma source 430 applies high frequency power to the plasma generating space 412 .
  • the plasma source 430 may generate plasma by exciting a process gas.
  • the plasma source 430 may include a flange 431 (an example of the second body), an antenna 432, a power source 434, and a fan 435.
  • the Flange 431 may surround antenna 432 .
  • the flange 431 may include a lower flange 431a (one example of the second body), an upper flange 431b (another example of the second body), and a side flange 431c.
  • the lower flange 431a, the upper flange 431b, and the side flange 431c may be provided as separate parts and fastened to each other, or may be provided as one part.
  • the lower flange 431a, the upper flange 431b, and the side flange 431c may be combined with each other to form a space in which the antenna 432 can be disposed.
  • the upper flange 431a may be disposed above the antenna 432
  • the lower flange 431b may be disposed below the antenna 432
  • the side flange 431c may be disposed on the side of the antenna 432.
  • the lower flange 431a and the upper flange 431b may be connected to the plasma chamber 410, which is a quartz tube.
  • Antenna 432 may be an inductively coupled plasma (ICP) antenna.
  • the antenna 432 may be provided in a coil shape.
  • the antenna 432 may be wound around the plasma chamber 410 multiple times from outside the plasma chamber 410 .
  • the antenna 432 may be spirally wound around the plasma chamber 410 multiple times from the outside of the plasma chamber 410 .
  • the antenna 432 may be wound around the plasma chamber 410 in a region corresponding to the plasma generating space 412 .
  • Power source 434 may apply power to antenna 432 .
  • the power source 434 may apply a high-frequency alternating current to the antenna 432 .
  • the high-frequency alternating current applied to the antenna 432 may form an induced electric field in the plasma generating space 412 .
  • the process gas supplied into the plasma generation space 412 may be converted into a plasma state by obtaining energy required for ionization from an induced electric field.
  • the power source 434 may be connected to one end of the antenna 432 .
  • the power source 434 may be connected to one end of an antenna 432 provided at a height corresponding to the upper region of the plasma chamber 410 . Also, the other end of the antenna 432 may be grounded.
  • the other end of the antenna 432 provided at a height corresponding to the lower region of the plasma chamber 410 may be grounded.
  • the power supply 434 may be connected to the other end of the antenna 432 and one end of the antenna 432 may be grounded.
  • the fan 435 may dissipate heat generated by the antenna 432 to the outside of the substrate processing apparatus 1000 .
  • the diffusion chamber 440 may diffuse the plasma generated in the plasma chamber 410 .
  • the diffusion chamber 440 may be disposed below the plasma chamber 410 .
  • the diffusion chamber 440 may have an open top and bottom shape.
  • the diffusion chamber 440 may have an inverted funnel shape.
  • An upper end of the diffusion chamber 440 may have a diameter corresponding to that of the plasma chamber 410 .
  • the lower end of the diffusion chamber 440 may have a larger diameter than the upper end of the diffusion chamber 440 .
  • the diffusion chamber 440 may increase in diameter from top to bottom.
  • the diffusion chamber 440 may have a diffusion space 442 .
  • Plasma generated in the plasma generating space 412 may diffuse while passing through the diffusion space 442 .
  • Plasma introduced into the diffusion space 442 may be introduced into the processing space 412 via the baffle 250 .
  • the sealing unit 500 may seal a connection between the plasma chamber 410 and the flange 431 .
  • At least one sealing unit 500 may be provided.
  • a plurality of sealing units 500 may be provided. Any one of the sealing units 500 may be configured to seal a connection between the upper flange 431b and the plasma chamber 410 .
  • Another one of the sealing units 500 may be configured to seal a connection between the lower flange 431a and the plasma chamber 410 . That is, one of the sealing units 500 may be configured to surround the upper portion of the plasma chamber 410 and the other of the sealing units 500 may be configured to surround the lower portion of the plasma chamber 410 .
  • a detailed description of the sealing unit 500 will be described later.
  • An exhaust unit may exhaust process gas and impurities inside the process processing unit 200 to the outside.
  • the exhaust unit may exhaust impurities generated during the processing of the substrate W to the outside of the substrate processing apparatus 1000 .
  • the exhaust may provide reduced pressure to the process space 212 .
  • FIG. 3 is a view showing a part of a cross section of the sealing unit of FIG. 2 . 3 shows an enlarged view of a connection portion between the lower flange 431a and the plasma chamber 410 .
  • the connection between the upper flange 431a and the plasma chamber 410 has a vertically symmetrical structure with respect to the configuration shown in FIG. 3 .
  • the sealing unit 500 according to an embodiment of the present invention includes a ring body 510, a fluid channel 520, a sealing member 530, an interface member 540, and a holder 550. can include
  • the ring body 510 may fix the position of the sealing member 530 .
  • the ring body 510 may have a ring shape when viewed from above.
  • a channel groove 512 may be formed in the ring body 510 .
  • the channel groove 512 may be formed by being recessed in one direction from one surface of the ring body 510 . When viewed from above, the channel groove 512 may be generally formed along the circumferential direction of the ring body 510 .
  • the channel groove 512 may be formed in the ring body 510 to have a substantially 'U' shape.
  • the ring body 510 may be provided with a material containing metal.
  • the ring body 510 may be provided with a material containing aluminum.
  • the fluid channel 520 may be provided in a channel groove 512 formed in the ring body 510 .
  • the fluid channel 520 may form a flow path through which fluid may flow therein.
  • a cooling fluid capable of cooling the ring body 510 may flow through the fluid channel 520 .
  • the cooling fluid may be cooling water. However, it is not limited thereto, and the cooling fluid may be provided as a cooling gas capable of cooling the ring body 510.
  • the fluid channel 520 may be made of a material including metal.
  • the fluid channel 520 may be made of a material including copper.
  • the sealing member 530 may have a ring shape.
  • the sealing member 530 may seal a connection between the flange 431 and the plasma chamber 410 .
  • the sealing member 530 may be an O-ring.
  • the sealing member 530 may be made of a material having excellent elasticity.
  • the sealing member 530 may be provided with a material having greater elasticity (ie, a material having greater restoring force) than the ring body 510 , the interface member 540 , and the holder 550 .
  • the sealing member 530 may be made of a material including rubber.
  • the sealing member 530 may be disposed between the ring body 510 , the plasma chamber 410 , and the flange 431 to seal a connection between the plasma chamber 410 and the flange 431 .
  • the interface member 540 may provide a heat transfer path so that heat generated from the plasma chamber 410 bypasses the sealing member 530 and is dissipated.
  • the interface member 540 may be provided with a material having higher thermal conductivity than the sealing member 530 .
  • the interface member 540 may be made of a material containing metal.
  • the interface member 540 may be made of aluminum.
  • the interface member 540 may be disposed between the aforementioned ring body 510 and the holder 550 described later. When viewed from the top, the interface member 540 may have a generally ring shape.
  • FIG. 4 is a cross-sectional view of the interface member of FIG. 3
  • FIG. 5 is a view showing a portion of the interface member of FIG. 3 viewed from the top. 4 and 5
  • an interface member 540 according to an embodiment of the present invention includes a first surface 541, a second surface 542, a contact surface 543, an inclined surface 544, and a cutout. (545).
  • the first surface 541 may be a surface adjacent to the antenna 432 .
  • the second surface 542 may be a surface far from the antenna 432 .
  • the second surface 542 may be a surface facing the ring body 510 .
  • a contact surface 543 and an inclined surface 544 may be provided between the first surface 541 and the second surface 542 .
  • the contact surface 543 may contact the plasma chamber 410 .
  • the contact surface 543 may be a surface that receives heat transferred from the plasma chamber 410 .
  • the area of the contact surface 543 may increase or decrease according to heat generated in the plasma chamber 410 .
  • the area of the contact surface 543 may be the first area.
  • the temperature of the plasma chamber 410 is a second temperature higher than the first temperature
  • the area of the contact surface 543 may be a second area larger than the first area.
  • the inclined surface 544 may be provided at a position opposite to the contact surface 543 .
  • the inclined surface 544 may be a surface facing the holder 550 to be described later.
  • the inclined surface 544 may be a surface facing the inclined portion 545 of the holder 550 to be described later.
  • a cutout 545 may be formed in the interface member 540 . That is, the interface member 540 may have a ring shape as a whole, but may have a cut ring shape in which a portion of the interface member 540 is cut out.
  • the interface member 540 may be thermally expanded, and the shape of the interface member 540 may be distorted by such thermal expansion. If the shape of the interface member 540 is distorted, contact between the interface member 540 and the plasma chamber 410 may not be properly made.
  • the interface member 540 includes a cutout 545 in which a portion is cut, so that even if heat is transferred to the interface member 540 and the interface member 545 is thermally expanded, the interface member 545 may be thermally expanded.
  • the shape of the member 540 is not distorted, and when the interface member 540 is cooled, it can return to its original shape.
  • the width of the cutout 545 formed in the interface member 540 may be equal to or larger than the maximum expansion amount of the interface member 540 due to heat transferred from the plasma chamber 410 .
  • FIG. 6 is a view showing a cross-section of the holder of FIG. 5;
  • the holder 550 may fix the ring body 510 and the interface member 540 .
  • the holder 550 may have a ring shape when viewed from above.
  • the holder 550 may be made of a material including metal.
  • the holder 550 may be provided with a material including aluminum.
  • the holder 550 may include a first part 551 , a second part 552 , an inclined part 554 , and a cover part 555 .
  • the first part 551 may be a part facing the antenna 432 .
  • the second part 552 may be a part facing the plasma chamber 410 .
  • the inclined portion 554 may include an inclined portion 554 and a cover portion 555 between the first portion 551 and the second portion 552 .
  • the inclined portion 554 may be a portion facing the aforementioned inclined surface 544 .
  • the cover part 555 may be a part covering the channel groove 512 of the ring body 510 .
  • the inclined portion 554 of the holder 550 may be inserted into a space between the interface ring 540 and the ring body 510 .
  • holes not shown are formed in the ring body 510, and coupling means such as screws and bolts may be inserted into the holes. Accordingly, the ring body 510 and the flange 431 may be fastened to each other. Also, holes (not shown) may be formed in the holder 550, and grooves corresponding to the holes may be formed in the ring body 510. A coupling means such as a screw or a bolt may be inserted into the hole, and the coupling means may be again fastened to a groove (eg, a screw groove) formed in the ring body 510 . Accordingly, the holder 550 and the interface ring 540 may be fastened.
  • FIG. 7 is a view showing how the substrate processing apparatus of FIG. 2 performs a plasma processing process
  • FIG. 8 is a view showing a heat transfer path in the sealing unit of FIG. 7 .
  • the gas supply unit 450 supplies process gas G to the plasma generation space 412
  • the process gas is excited by an electric field generated by the antenna 432 .
  • plasma P may be generated.
  • Plasma P generated in the plasma space may collide with the plasma chamber 510 and transfer heat to the plasma chamber 510 .
  • most of the heat H transferred to the plasma chamber 510 may be transferred to the interface member 540 having a higher thermal conductivity than the sealing member 530 and a larger contact area.
  • the heat H transferred to the interface member 540 may be dissipated through the ring body 510 provided with the fluid channel 520 through which the cooling fluid flows. That is, according to an embodiment of the present invention, the interface member 540 provides a heat transfer path through which heat (H) of the plasma chamber 410 can be dissipated to the outside without passing through the sealing member 530. Thermal deformation of the sealing member 530 may be minimized.
  • the interface member 540 can be thermally expanded due to heat transfer. As described above, the interface member 540 is provided with the cutout 545 so that the interface member 540 can be more flexibly deformed against thermal expansion. and can be reversed.
  • the interface member 540 may have an inclined surface 544
  • the holder 550 may include the inclined portion 554 . That is, the wedge-shaped holder 550 fixing the interface member 540 to the inclined surface 544 of the interface member 540 has an inclined portion 554 .
  • thermal expansion may occur in the interface member 540. Since the holder 550 applies force F in an inclined direction through the inclined portion 554 (Press), Problems in which the interface member 540 is separated or the contact surface 543 of the interface member 540 does not properly contact the plasma chamber 410 may be minimized.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne un appareil de traitement d'un substrat. L'appareil de traitement d'un substrat peut comprendre : un premier corps ; un second corps qui est différent du premier corps ; et une unité d'étanchéité qui scelle la partie de liaison entre le premier corps et le second corps, l'unité d'étanchéité comprenant : un élément d'étanchéité qui scelle la partie de liaison ; et un élément d'interface qui vient en contact avec le premier corps ou le second corps et est fourni en tant que matériau ayant une conductivité thermique supérieure à celle de l'élément d'étanchéité.
PCT/KR2022/002111 2022-01-07 2022-02-11 Appareil de traitement de substrat WO2023132402A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020220002533A KR20230106869A (ko) 2022-01-07 2022-01-07 기판 처리 장치
KR10-2022-0002533 2022-01-07

Publications (1)

Publication Number Publication Date
WO2023132402A1 true WO2023132402A1 (fr) 2023-07-13

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KR (1) KR20230106869A (fr)
WO (1) WO2023132402A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227876A (ja) * 1994-04-29 1996-09-03 Applied Materials Inc プラズマエッチングリアクタ内の真空シール用保護カラー
KR19980032909A (ko) * 1996-10-18 1998-07-25 조셉제이.스위니 원뿔형 돔과 유도성으로 연결된 평행판 플라즈마 반응기
KR20150131367A (ko) * 2013-05-09 2015-11-24 맷슨 테크놀로지, 인크. 플라즈마 프로세싱 시스템에서 진공 밀봉의 보호 시스템 및 방법
KR20160043820A (ko) * 2014-10-14 2016-04-22 (주)트리플코어스코리아 플라즈마 처리 장치
KR102116475B1 (ko) * 2020-02-24 2020-05-28 피에스케이 주식회사 실링 유지 부재 및 기판 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227876A (ja) * 1994-04-29 1996-09-03 Applied Materials Inc プラズマエッチングリアクタ内の真空シール用保護カラー
KR19980032909A (ko) * 1996-10-18 1998-07-25 조셉제이.스위니 원뿔형 돔과 유도성으로 연결된 평행판 플라즈마 반응기
KR20150131367A (ko) * 2013-05-09 2015-11-24 맷슨 테크놀로지, 인크. 플라즈마 프로세싱 시스템에서 진공 밀봉의 보호 시스템 및 방법
KR20160043820A (ko) * 2014-10-14 2016-04-22 (주)트리플코어스코리아 플라즈마 처리 장치
KR102116475B1 (ko) * 2020-02-24 2020-05-28 피에스케이 주식회사 실링 유지 부재 및 기판 처리 장치

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